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Journal articles on the topic 'STM lithography'

To see the other types of publications on this topic, follow the link: STM lithography.

Author: Grafiati

Published: 4 June 2021

Last updated: 19 February 2022

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1

Dobrik, G., L. Tapasztó, P. Nemes-Incze, Ph Lambin, and L. P. Biró. "Crystallographically oriented high resolution lithography of graphene nanoribbons by STM lithography." physica status solidi (b) 247, no. 4 (January 15, 2010): 896–902. http://dx.doi.org/10.1002/pssb.200982953.

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2

Marrian, C. R. K., and E. A. Dobisz. "High-resolution lithography with a vacuum STM." Ultramicroscopy 42-44 (July 1992): 1309–16. http://dx.doi.org/10.1016/0304-3991(92)90440-u.

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3

Zhang, L. B., J. X. Shi, Ju Long Yuan, Shi Ming Ji, and M. Chang. "The Advancement of SPM-Based Nanolithography." Materials Science Forum 471-472 (December 2004): 353–57. http://dx.doi.org/10.4028/www.scientific.net/msf.471-472.353.

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Scanning probe microscopy (SPM) has proved to be a powerful tool not only for imaging but also for nanofabrication. SPM-based nanofabrication comprises manipulation of atoms or molecules and SPM-based nanolithography. SPM-based nanolithography, referred to as scanning probe lithography (SPL) in this review, holds good promise for fabrication of nanometer-scale patterns as an emerging generic lithography technique that STM, AFM, and SNOM are directly or otherwise used to pattern nanometer-scale features under appropriate conditions. Patterning methods including mechanical SPL, electrical SPL, thermal SPL, and optical SPL, are described in terms of SPL mechanisms. The newly developed variations of the above-mentioned SPL methods such as dip pen nanolithography, nanoshaving and nanografting, replacement lithography, constructive nanolithography, nanojet lithography, and electrostatic lithography, are also illustrated respectively. Analyses of prospective application of these SPL methods are presented finally.

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4

Yang, Ye, and Wan Sheng Zhao. "Fabrication of the Nanoscale Flat-Bottomed and Lamellar Structures on HOPG Surface by STM-Based Electric Lithography." Key Engineering Materials 562-565 (July 2013): 45–51. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.45.

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The requirement for fabrication of the nanometer-scale structures has grown up recently due to the advance in the development of the nanoscale electronic-devices or bio-devices. Scanning tunneling microscope (STM)-based electric lithography is one of the potential fabrication approaches to produce nanoscale structures on a variety of materials. This study of the STM-based electric lithography intends to fabricate flat-bottomed and lamellar structures on the graphite surface, which differs from the conventionally fabricated tapered structures. The formation and the comparison of both the lamellar and tapered structures are obtained by applying distinct STM tip geometries in the STM-based electric lithography. On the basis of the experimental results, it is found that the formation of lamellar structures should be attributed to the local electrochemical reaction, while the generation of tapered structures is resulted from the dielectric breakdown in the tip-sample gap.

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5

Kleineberg, U., A. Brechling, M. Sundermann, and U. Heinzmann. "STM Lithography in an Organic Self-Assembled Monolayer." Advanced Functional Materials 11, no. 3 (June 2001): 208–12. http://dx.doi.org/10.1002/1616-3028(200106)11:3<208::aid-adfm208>3.0.co;2-x.

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6

Vetrone, J., and Y. W. Chung. "Changes in tip structure measured during STM lithography." Applied Surface Science 78, no. 3 (July 1994): 331–38. http://dx.doi.org/10.1016/0169-4332(94)90022-1.

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7

Dobrik, Gergely, Levente Tapasztó, and László Biró. "Nanometer wide ribbons and triangles by STM lithography of graphene." Nanopages 7, no. 1 (June 2012): 1–7. http://dx.doi.org/10.1556/nano.2010.00001.

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8

Tucker, J. R., and T. C. Shen. "Prospects for atomically ordered device structures based on STM lithography." Solid-State Electronics 42, no. 7-8 (July 1998): 1061–67. http://dx.doi.org/10.1016/s0038-1101(97)00302-x.

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9

KASU, Makoto, and Naoki KOBAYASHI. "Nanoscale Semiconductor Processes Using STM and AFM Lithographies. Nanometer-scale GaAs Selective Growth Using STM Lithography." Hyomen Kagaku 19, no. 11 (1998): 734–41. http://dx.doi.org/10.1380/jsssj.19.734.

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10

Leuschner, R., E. Günther, G. Falk, A. Hammerschmidt, K. Kragler, I. W. Rangelow, and J. Zimmermann. "Bilayer resist process for exposure with low-voltage electrons (STM-lithography)." Microelectronic Engineering 30, no. 1-4 (January 1996): 447–50. http://dx.doi.org/10.1016/0167-9317(95)00284-7.

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11

Wang, Guang Long, Min Gao, Li Shuang Feng, Yi Dun, Jian Guo Hou, and Jie Tang. "Nanostructures and Nanodevices Special Fabrication and Characterization." Key Engineering Materials 483 (June 2011): 243–48. http://dx.doi.org/10.4028/www.scientific.net/kem.483.243.

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The nanostructures and nanodevices special fabrication technology including electron beam lithography (EBL), focused ion beam (FIB) technology, microcontact printing (μCP) and nanoimprinting were introduced in this paper. The examples of Y-shape waveguide coupler and high precision nanopattern of China Seal were designed and fabricated based the EBL and FIB technology respectively. Their structures can be characterized by scanning electron microscopy (SEM), scanning tunnel microscopy (STM) and atom force microscopy (AFM) etc. The C60 molecular on a Si (111)-(7×7) surface in variable temperature is deposited and detected by STM. The fabricated pattern and structures results indicated that the novel fabrication and characterization technology is very important and effective tools in nanoscale science field.

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12

Yang, Ye, and Zuhua Fang. "Nanoscale electric discharge‐induced FLG peeling off during the STM electric lithography." Micro & Nano Letters 12, no. 10 (October 2017): 793–98. http://dx.doi.org/10.1049/mnl.2017.0383.

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13

SAKURAI, Makoto, Carsten THIRSTRUP, and Masakazu AONO. "Nanoscale Semiconductor Processes Using STM and AFM Lithographies. Formation of Silicon Dangling Bonds Using STM Lithography and Its Decoration." Hyomen Kagaku 19, no. 11 (1998): 708–15. http://dx.doi.org/10.1380/jsssj.19.708.

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14

Mühl, T., and S. Myhra. "Electro-oxidative lithography by STM as a proximity electrode of electrically conducting DLC." Journal of Physics: Conference Series 61 (April 1, 2007): 841–46. http://dx.doi.org/10.1088/1742-6596/61/1/168.

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15

Mol, J. A., S. P. C. Beentjes, and S. Rogge. "A low temperature surface preparation method for STM nano-lithography on Si(100)." Applied Surface Science 256, no. 16 (June 2010): 5042–45. http://dx.doi.org/10.1016/j.apsusc.2010.03.052.

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16

Chen, Fan, Anhong Zhou, and Haeyeon Yang. "The effects of strain on STM lithography on HS-ssDNA/Au (111) surface." Applied Surface Science 255, no. 15 (May 2009): 6832–39. http://dx.doi.org/10.1016/j.apsusc.2009.03.003.

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17

Jede, Ralf, and George Lanzarotta. "Using a SEM to “Write” Sub Micron Structures." Microscopy Today 1, no. 4 (June 1993): 4–5. http://dx.doi.org/10.1017/s1551929500067389.

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Electron beam lithography is a term well known in the world of microelectronics. It provides an effective but costly solution for producing the smallest electronic devices (transistors, memories, etc). Many fields of science and research also require small structures below the one micron dimension. The ability to generate these structures “in house” without going to external sources has been a luxury only the largest corporations and universities could afford. Even when a production lithography system is available, the time allocated for research work can sometimes be extremely limited. Those with the need for these small devices are now realizing there is new way to get the most use from their SEM, STM or STEM.In the past few years, experimental e-beam systems have been developed by making use of the basic capabilities of the scanning electron microscope. Mow a variety of home built and commercially available systems are being used throughout the world. The mast basic system can take control of the e-beam in the SEM and write a simple pattern on a sample coated with materials sensiiive to electrons.

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18

Savouchkina, A., A. Foelske-Schmitz, V. A. Guzenko, D. Weingarth, G. G. Scherer, A. Wokaun, and R. Kötz. "In situ STM study of Pt-nanodot arrays on HOPG prepared by electron-beam lithography." Electrochemistry Communications 13, no. 5 (May 2011): 484–87. http://dx.doi.org/10.1016/j.elecom.2011.02.027.

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19

Ohtsuka, Kenichi, and Kenji Yonei. "Nanometer-Scale Surface Modification Using Scanning Tunneling Microscope (STM)-Based Lithography with Conductive Layer on Resist." Japanese Journal of Applied Physics 41, Part 2, No. 6B (June 15, 2002): L667—L668. http://dx.doi.org/10.1143/jjap.41.l667.

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20

ISHIBASHI, Masayoshi, Seiji HEIKE, Hiroshi KAJIYAMA, Yasuo WADA, and Tomihiro HASHIZUME. "Nanoscale Semiconductor Processes Using STM and AFM Lithographies. Ten-nanometer Level Lithography Using Scanning Probe Microscopy." Hyomen Kagaku 19, no. 11 (1998): 722–26. http://dx.doi.org/10.1380/jsssj.19.722.

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21

Tosic, Dragana, Zoran Markovic, Svetlana Jovanovic, Momir Milosavljevic, and Biljana Todorovic-Markovic. "Comparative analysis of different methods for graphene nanoribbon synthesis." Chemical Industry 67, no. 1 (2013): 147–56. http://dx.doi.org/10.2298/hemind120403056t.

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Graphene nanoribbons (GNRs) are thin strips of graphene that have captured the interest of scientists due to their unique structure and promising applications in electronics. This paper presents the results of a comparative analysis of morphological properties of graphene nanoribbons synthesized by different methods. Various methods have been reported for graphene nanoribons synthesis. Lithography methods usually include electron-beam (e-beam) lithography, atomic force microscopy (AFM) lithography, and scanning tunnelling microscopy (STM) lithography. Sonochemical and chemical methods exist as well, namely chemical vapour deposition (CVD) and anisotropic etching. Graphene nanoribbons can also be fabricated from unzipping carbon nanotubes (CNTs). We propose a new highly efficient method for graphene nanoribbons production by gamma irradiation of graphene dispersed in cyclopentanone (CPO). Surface morphology of graphene nanoribbons was visualized with atomic force and transmission electron microscopy. It was determined that dimensions of graphene nanoribbons are inversely proportional to applied gamma irradiation dose. It was established that the narrowest nanoribbons were 10-20 nm wide and 1 nm high with regular and smooth edges. In comparison to other synthesis methods, dimensions of graphene nanoribbons synthesized by gamma irradiation are slightly larger, but the yield of nanoribbons is much higher. Fourier transform infrared spectroscopy was used for structural analysis of graphene nanoribbons. Results of photoluminescence spectroscopy revealed for the first time that synthesized nanoribbons showed photoluminescence in the blue region of visible light in contrast to graphene nanoribbons synthesized by other methods. Based on disclosed facts, we believe that our synthesis method has good prospects for potential future mass production of graphene nanoribbons with uniform size, as well as for future investigations of carbon nanomaterials for applications in optoelectronics and biological labeling.

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22

Hersam, M. C., G. C. Abeln, and J. W. Lyding. "An approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)." Microelectronic Engineering 47, no. 1-4 (June 1999): 235–37. http://dx.doi.org/10.1016/s0167-9317(99)00203-8.

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23

Pavlova, T. V., V. M. Shevlyuga, B. V. Andryushechkin, G. M. Zhidomirov, and K. N. Eltsov. "Local removal of silicon layers on Si(1 0 0)-2 × 1 with chlorine-resist STM lithography." Applied Surface Science 509 (April 2020): 145235. http://dx.doi.org/10.1016/j.apsusc.2019.145235.

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24

Sundermann, M., J. Hartwich, K. Rott, D. Meyners, E. Majkova, U. Kleineberg, M. Grunze, and U. Heinzmann. "Nanopatterning of Au absorber films on Mo/Si EUV multilayer mirrors by STM lithography in self-assembled monolayers." Surface Science 454-456 (May 2000): 1104–9. http://dx.doi.org/10.1016/s0039-6028(00)00208-9.

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25

Foelske-Schmitz, A., A. Peitz, V. A. Guzenko, D. Weingarth, G. G. Scherer, A. Wokaun, and R. Kötz. "In situ electrochemical STM study of platinum nanodot arrays on highly oriented pyrolythic graphite prepared by electron beam lithography." Surface Science 606, no. 23-24 (December 2012): 1922–33. http://dx.doi.org/10.1016/j.susc.2012.07.040.

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26

AONO, Masakazu, Chun-Sheng JIANG, Tomonobu NAKAYAMA, Taichi OKUDA, Shan QIAO, Makoto SAKURAI, Carsten THIRSTRUP, and Zang-Hua WU. "Nanoscale Semiconductor Processes Using STM and AFM Lithographies. The Present and Future of Nano-Lithography Using Scanning Probes. How to Measure the Properties of Nano-Lithographed Structures." Hyomen Kagaku 19, no. 11 (1998): 698–707. http://dx.doi.org/10.1380/jsssj.19.698.

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27

Dzurak, A. S., M. Y. Simmons, A. R. Hamilton, R. G. Clark, R. Brenner, T. M. Buehler, N. J. Curson, et al. "Construction of a silicon-based solid state quantum computer." Quantum Information and Computation 1, Special (December 2001): 82–95. http://dx.doi.org/10.26421/qic1.s-8.

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We discuss progress towards the fabrication and demonstration of a prototype silicon-based quantum computer. The devices are based on a precise array of 31P dopants embedded in 28Si. Fabrication is being pursued via two complementary pathways – a ‘top-down’ approach for near-term production of few-qubit demonstration devices and a ‘bottom-up’ approach for large-scale qubit arrays. The ‘top-down’ approach employs ion implantation through a multi-layer resist structure which serves to accurately register the donors to metal control gates and single-electron transistor (SET) read-out devices. In contrast the ‘bottom-up’ approach uses STM lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. Techniques for qubit read-out, which utilise coincidence measurements on novel twin-SET devices, are also presented.

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28

Yang, Ye, and Wansheng Zhao. "Investigation of the nanoscale features fabricated on the HOPG surface induced by STM electric lithography under different voltage regions in ambient conditions." Precision Engineering 37, no. 2 (April 2013): 473–82. http://dx.doi.org/10.1016/j.precisioneng.2012.12.004.

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29

Smolyaninov, Igor I. "Scanning Probe Microscopy of Surface Plasmons." International Journal of Modern Physics B 11, no. 21 (August 20, 1997): 2465–510. http://dx.doi.org/10.1142/s021797929700126x.

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Recent development of novel scanning probe techniques such as Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM), and Near-Field Optical Microscopy (NFOM) has opened new ways to study local field distribution of surface electromagnetic waves. A lot of experimental efforts have been concentrated on the study of surface plasmons (SP). Different techniques allow to excite and probe SPs with wavelengths from 1 nm down to the optical range along its entire dispersion curve. Large number of phenomena have been studied directly, such as SP scattering by individual defects, strong and weak localization of SP, SP induced local field enhancement, light emission from the tunneling junction, etc. Scanning probe techniques allow not only topography and field mapping but also surface modification and lithography on the nanometer scale. Combination of these features in the same experimental setup proved to be extremely useful in SP studies. For example, some prototype two dimensional optical elements able to control SP propagation have been demonstrated.

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30

Yang, Ye, and Jun Lin. "Study of the electrode tool wear and the probe tip sharpening phenomena during the nanoscale STM electric discharge lithography of the bulk HOPG surface." Journal of Materials Processing Technology 234 (August 2016): 150–57. http://dx.doi.org/10.1016/j.jmatprotec.2016.03.022.

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31

Yamamoto, Hiroki, Guy Dawson, Takahiro Kozawa, and Alex P. G. Robinson. "Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments." Quantum Beam Science 4, no. 2 (March 27, 2020): 19. http://dx.doi.org/10.3390/qubs4020019.

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Directed self-assembly (DSA) was investigated on self-assembled monolayers (SAMs) chemically modified by electron beam (EB) irradiation, which is composed of 6-(4-nitrophenoxy) hexane-1-thiol (NPHT). Irradiating a NPHT by EB could successfully induce the orientation and selective patterning of block copolymer domains. We clarified that spatially-selective lamellar orientations of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) could be achieved by a change of an underlying SAM. The change of an underlying SAM is composed of the transition of an NO2 group to an NH2 group, which is induced by EB. The modification in the polarity of different regions of the SAM with EB lithography controlled the lamellar orientation of PS-b-PMMA. The reduction of the NPHT SAM plays an important role in the orientation of block copolymer. This method might significantly simplify block copolymer DSA processes when it is compared to the conventional DSA process. By investigating the lamellae orientation with EB, it is clarified that only suitable annealing temperatures and irradiation doses lead to the vertical orientation. We also fabricated pre-patterned Si substrates by EB lithographic patterning and reactive ion etching (RIE). DSA onto such pre-patterned Si substrates was proven to be successful for subdivision of the lithographic patterns into line and space patterns.

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32

Park, Jun Han, Dan Hee Yun, Yong Won Ma, Cheong Yeol Gwak, and Bo Sung Shin. "Prism-Based Laser Interference Lithography System for Simple Multibeam Interference Lithography." Science of Advanced Materials 12, no. 3 (March 1, 2020): 398–402. http://dx.doi.org/10.1166/sam.2020.3650.

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Laser interference lithography is a powerful technique of subwavelength-scale patterning. However, this technique requires a complicated optical system, the precise control and complexity of which increases exponentially with increasing number of beams. In this study, a compact prism-based laser interference lithography system using optical fibers and a prism was proposed to simplify the technique. In this system, the beam splitter and mirrors in a typical laser interference lithography system were replaced by a designed prism, and the pattern could be easily changed by only changing the prism, without other modification, irrespective of the number of beams required. In addition, because the laser and the laser interference lithography system are connected by an optical fiber, the system can be moved easily and flexibly. The fabrication of various submicroscale line patterns, holes, and dot patterns with a 270–1400 nm pitch was achieved using the proposed laser interference lithography system.

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33

Fischer, Ulrich Christian, Carsten Hentschel, Florian Fontein, Linda Stegemann, Christiane Hoeppener, Harald Fuchs, and Stefanie Hoeppener. "Near-field photochemical and radiation-induced chemical fabrication of nanopatterns of a self-assembled silane monolayer." Beilstein Journal of Nanotechnology 5 (September 3, 2014): 1441–49. http://dx.doi.org/10.3762/bjnano.5.156.

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A general concept for parallel near-field photochemical and radiation-induced chemical processes for the fabrication of nanopatterns of a self-assembled monolayer (SAM) of (3-aminopropyl)triethoxysilane (APTES) is explored with three different processes: 1) a near-field photochemical process by photochemical bleaching of a monomolecular layer of dye molecules chemically bound to an APTES SAM, 2) a chemical process induced by oxygen plasma etching as well as 3) a combined near-field UV-photochemical and ozone-induced chemical process, which is applied directly to an APTES SAM. All approaches employ a sandwich configuration of the surface-supported SAM, and a lithographic mask in form of gold nanostructures fabricated through colloidal sphere lithography (CL), which is either exposed to visible light, oxygen plasma or an UV–ozone atmosphere. The gold mask has the function to inhibit the photochemical reactions by highly localized near-field interactions between metal mask and SAM and to inhibit the radiation-induced chemical reactions by casting a highly localized shadow. The removal of the gold mask reveals the SAM nanopattern.

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34

Zhang, Man, Liang-Ping Xia, Sui-Hu Dang, A.-Xiu Cao, Qi-Ling Deng, and Chun-Lei Du. "A Novel Nanoimprint Lithography Thiol-ene Resist for Sub-70 nm Nanostructures." Science of Advanced Materials 12, no. 6 (June 1, 2020): 779–83. http://dx.doi.org/10.1166/sam.2020.3721.

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In this paper, we propose a novel kind of UV click-polymerization thiol-ene copolymers as nanoimprint lithography resists for sub-70 nm resolution patterns. High-precision mold imprint and release are two of the most critical steps of nanoimprint lithography, which requires the resists with properties of excellent conformal replication and low surface energy. Conventional UV-curable resists used in nanoimprint lithography, such as acrylate, epoxy resin, and vinyl ether, cannot satisfy all these properties requirements because they exhibit surface oxygen inhibition during polymerization, or materials fracture and delamination during mold releasing. A novel kind of thiol-ene copolymers have been investigated in this study, which have many properties favorable for use as nanoimprint lithography resists to imprint sub-70 nm and high-aspect-ratio nanostructures. These properties include sufficiently low viscosity and high Young's modulus, low surface energy for easy demolding, polymerization in benign ambient, and in particular, high chemical-etch resistance. These excellent properties give improve nanoimprinting results.

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35

You, Dong-Bin, Jun-Han Park, Bo-Seok Kang, Dan-Hee Yun, and Bo Sung Shin. "A Fundamental Study of a Surface Modification on Silicon Wafer Using Direct Laser Interference Patterning with 355-nm UV Laser." Science of Advanced Materials 12, no. 4 (April 1, 2020): 516–19. http://dx.doi.org/10.1166/sam.2020.3658.

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The growing need for precision machining, which is difficult to achieve using conventional mechanical machining techniques, has fueled interest in laser patterning. Ultraviolet (UV) pulsed-lasers have been used in various applications, including the micro machining of polymers and metals. In this study, we investigated direct laser interference patterning of a silicon waver using a third-harmonic diode-pumped solid-state UV laser with a wavelength of 355 nm. Direct laser lithography is much more simple process compare to other submicro processing method. We have studied interference patterning for silicon wafers as a basic research for direct laser interference patterning on wafer surfaces without mask. And Finite element analysis (FEA) was performed for a 150° biprism using modeling software (COMSOL Multiphysics 5.4) to determine changes in the periodic patterns according to the focusing distance in the direct interference lithography experiment. In further study, we expect this technique to be applied to direct laser interference lithography on metals.

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36

Du, Hua, Hui Min Xie, Hai Chang Jiang, Li Jian Rong, Qi Ang Luo, Chang Zhi Gu, and Ya-Pu Zhao. "Strain Analysis on Porous TiNi SMA Using SEM Moiré Method." Key Engineering Materials 326-328 (December 2006): 79–82. http://dx.doi.org/10.4028/www.scientific.net/kem.326-328.79.

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In this paper, a new technique for fabricating grating on the surface of porous TiNi SMA is proposed. The grating is directly written onto the surface of the specimen using the FIB milling. No photoresist is required during the lithography process. From the experimental results, it can be obviously seen that the grating fabricated by FIB milling has a better quality than that by electron beam lithography. Using the self-made FIB grating, the in-plane deformation of the porous TiNi SMA in microscale is studied by SEM moiré method. Moiré and the microscopical structures are synchronously observed, including microcracks, martensites and grain boundaries.

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37

Zhang, Hui Yong. "Nano Structures Constructed by AFM Based Lithography." Advanced Materials Research 815 (October 2013): 490–95. http://dx.doi.org/10.4028/www.scientific.net/amr.815.490.

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Scanning probe lithography such as atom force microscopy (AFM) has the highest spatial resolution. SPM etching technique employed conductive SPM probe as cathode and metal or semiconductor surface as anode. This paper reports the construction of nanopatterns by conductive nanoetching method on HDT modified Au (111) surface. With Pt-plated probe tip, nanowires of a minimum width of 176 nm was fabricated. The study shows that AFM lithography could be an alternative technology to e-beam lithography and focused-ion-beam.

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38

Hu, Qin. "Thermal Evolution of Compound Nanoparticles on Moulds Machined by Focused-Ion-Beam for Micro/Nano Lithography." Journal of Nano Research 18-19 (July 2012): 307–15. http://dx.doi.org/10.4028/www.scientific.net/jnanor.18-19.307.

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Focused-ion-beam (FIB) milling is a modern fabrication technique by using focused energetic ions to ablate material and generate features with nanometer resolution. FIB system with Ga ion source was used in our lab to make moulds for laser-based micro/nano lithography. For FIB milling on glassy carbon, particles in the range of tens of nanometers up to 400 nm can often be found around the area subject to milling, with the composition of carbon and gallium. As the laser-based micro/nano lithography involves thermal process, it is important to identify the dynamic process of those compound nanoparticles during heat treatment. Glassy carbon moulds after FIB milling have been heated in air from room temperature up to 550 oC with temperature ramp rate of 10 oC/min. Scanning Electron Microscope (SEM) was used to record the morphology of the machined surface after heat treatments. Energy dispersive X-ray spectroscopy (EDS) was used for elemental analysis. Particles increase their size before the heating temperature reaches 200 oC. With further temperature increase, new particles nucleate, and grow at the neighbouring of the existing particles via coalescence and Ostwald ripening. When the temperature is over 400 oC, the morphology of nanoparticles changes, due to the evaporation of gallium. When the in air heating reaches 525 oC, cracking starts on the surface of glassy carbon. It is suggested that for in air lithographic application, heating temperature should not exceed 500 oC.

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39

Guo, XiaoWei, Jinglei Du, Xiangang Luo, Qiling Deng, and Chunlei Du. "RET simulations for SLM-based maskless lithography." Microelectronic Engineering 85, no. 5-6 (May 2008): 929–33. http://dx.doi.org/10.1016/j.mee.2008.01.055.

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40

Toyofuku, Takashi, Shinya Nishimura, Kazuya Miyashita, and Jun-Ichi Shirakashi. "10 Micrometer-Scale SPM Local Oxidation Lithography." Journal of Nanoscience and Nanotechnology 10, no. 7 (July 1, 2010): 4543–47. http://dx.doi.org/10.1166/jnn.2010.2356.

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41

Kim, Kwang-Ryul, Junsin Yi, Sung-Hak Cho, Nam-Hyun Kang, Myung-Woo Cho, Bo-Sung Shin, and Byoungdeog Choi. "SLM-based maskless lithography for TFT-LCD." Applied Surface Science 255, no. 18 (June 2009): 7835–40. http://dx.doi.org/10.1016/j.apsusc.2009.05.022.

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Sexton, B. A., and R. J. Marnock. "Characterization of High Resolution Resists and Metal Shims by Scanning Probe Microscopy." Microscopy and Microanalysis 6, no. 2 (March 2000): 129–36. http://dx.doi.org/10.1007/s100059910012.

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Technologies such as compact disc (CD) manufacturing, hologram embossing, and security printing rely on the reproduction of micro-patterns generated on surfaces by optical or electron-beam lithographic writing onto electron-beam or photoresists. The periodicity of such patterns varies from sub-micron to several microns, with depths up to 0.5 μm. The scanning probe microscope (SPM) is becoming a routine tool for analysis of these micro-patterns, to check on depths and lateral dimensions of features. Direct scanning of resist-covered plates is now possible, without damage, using resonant low-contact force SPM with etched silicon cantilevers. Metal shims produced from the master resist plates can also be scanned and checked for defects prior to production of embossed foils. The present article discusses examples of the use of a Digital Instruments 3100 microscope in analysis of production electron-beam lithography plates with a 0.5 μm resist thickness. We also examine features of nickel replicas (father and mother shims) produced by electroforming from the original plate. With SPM measurements of the development profile of a particular plate, corrections can be made to exposures and development times during production to correct errors. An example is given of such a feedback process.

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Yang, Ki Yeon, Jong Woo Kim, Sung Hoon Hong, and Heon Lee. "Patterning of the Self-Assembled Monolayer Using the Zero Residual Nano-Imprint Lithography." Solid State Phenomena 124-126 (June 2007): 523–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.523.

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Self-Assembled Monolayer (SAM) is a single layer of ordered molecules absorbed on a surface by chemical bonding between the molecular head group and the surface. The surface properties can be controlled by the terminal functional group of the SAM layer. In order to utilize SAM layers for device applications, SAM layer needs to be patterned as a sub-micron size. Patterning of SAM layer in sub-micron size has been done by various techniques including direct-writing by dip-pen nano lithography, selective etching with UV photons, and selective deposition of SAM layer by &-contact printing. In this study, silane based SAM layer was patterned to the sub-micron size using zero residual Nano imprint Lithography, which is regarded as next generation lithography technique due to its simplicity, high throughput and high resolution pattern transferring capability. Using zero-residual layer imprinting, 300nm~2um sized SAM patterns can successfully fabricated. In order to check the surface property of patterned SAM layer, a solution containing nano Ag particles was spin-coated on the SAM patterned substrate and nano Ag particles were selectively deposited on the substrate.

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Kim, Seonjun, and Young Tae Cho. "Replication and Surface Treatment of Micro Pattern Generated by Entanglement of Nanowires." Science of Advanced Materials 12, no. 3 (March 1, 2020): 403–6. http://dx.doi.org/10.1166/sam.2020.3651.

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In this study, a nano-micro pattern was fabricated by a nanoimprint lithography process using a porous material, particularly anodic aluminum oxide (AAO), and polymer resin. The fabricated mold consisted of a group of nanowires forming a bundle and showing a specific micro pattern. The structures were subjected to various surface treatments to control surface conditions and wettability. UV-Ozone treatment and octadecyltrichlorosilane (OTS) coating were used as surface treatments. Through these surface treatments, the surface energy of the fabricated structure was lowered, and as a result, it could be used as a mold for nano-micro patterning. The final product was also fabricated through a nanoimprint lithography process, and the reverse image of the mold was duplicated. The surface of each structure was observed by scanning electron microscopy (SEM) and the surface properties were examined by contact angle measurement.

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Seo, Manseung, and Haeryung Kim. "Delta lithography method to increase CD uniformity and throughput of SLM-based maskless lithography." Microelectronic Engineering 87, no. 5-8 (May 2010): 1135–38. http://dx.doi.org/10.1016/j.mee.2009.10.053.

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Hasegawa, Akihiro, Ryo-Il Kang, and Katsufusa Shono. "Electron beam direct lithography system using the SEM." Electronics and Communications in Japan (Part II: Electronics) 75, no. 11 (1992): 51–61. http://dx.doi.org/10.1002/ecjb.4420751106.

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Huang, Cheng, Markus Moosmann, Jiehong Jin, Tobias Heiler, Stefan Walheim, and Thomas Schimmel. "Polymer blend lithography: A versatile method to fabricate nanopatterned self-assembled monolayers." Beilstein Journal of Nanotechnology 3 (September 4, 2012): 620–28. http://dx.doi.org/10.3762/bjnano.3.71.

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A rapid and cost-effective lithographic method, polymer blend lithography (PBL), is reported to produce patterned self-assembled monolayers (SAM) on solid substrates featuring two or three different chemical functionalities. For the pattern generation we use the phase separation of two immiscible polymers in a blend solution during a spin-coating process. By controlling the spin-coating parameters and conditions, including the ambient atmosphere (humidity), the molar mass of the polystyrene (PS) and poly(methyl methacrylate) (PMMA), and the mass ratio between the two polymers in the blend solution, the formation of a purely lateral morphology (PS islands standing on the substrate while isolated in the PMMA matrix) can be reproducibly induced. Either of the formed phases (PS or PMMA) can be selectively dissolved afterwards, and the remaining phase can be used as a lift-off mask for the formation of a nanopatterned functional silane monolayer. This “monolayer copy” of the polymer phase morphology has a topographic contrast of about 1.3 nm. A demonstration of tuning of the PS island diameter is given by changing the molar mass of PS. Moreover, polymer blend lithography can provide the possibility of fabricating a surface with three different chemical components: This is demonstrated by inducing breath figures (evaporated condensed entity) at higher humidity during the spin-coating process. Here we demonstrate the formation of a lateral pattern consisting of regions covered with 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS) and (3-aminopropyl)triethoxysilane (APTES), and at the same time featuring regions of bare SiO x . The patterning process could be applied even on meter-sized substrates with various functional SAM molecules, making this process suitable for the rapid preparation of quasi two-dimensional nanopatterned functional substrates, e.g., for the template-controlled growth of ZnO nanostructures Bauermann, L. P.; Gerstel, P.; Bill, J.; Walheim, S.; Huang, C.; Pfeifer, J.; Schimmel, T. Langmuir 2010, 26, 3774–3778. doi:10.1021/la903636k.

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Yamamoto, Takamichi, Hideki Maekawa, and Tsutomu Yamamura. "AFM Anodization Lithography on Transparent Conductive Substrates." Journal of Nanoscience and Nanotechnology 8, no. 8 (August 1, 2008): 3838–42. http://dx.doi.org/10.1166/jnn.2008.191.

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In the present study, AFM anodization lithography was carried out on transparent conductive oxide substrates for the first time. ITO glasses were utilized as the transparent substrates. The surface of the ITO glass substrate was organically modified using the SAM (self-assembled monolayer) method. The wettability of the surfaces was controlled by changing the organic molecule used in the SAM method. An arbitrary nanopattern was fabricated using AFM anodization lithography on the organically modified ITO glass surface. Hydrophilic-hydrophobic nanopatterns on transparent substrates are potentially useful for optical observations of various substances adsorbed on nanostructures.

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Farehanim, M. A., U. Hashim, Norhayati Soin, A. H. Azman, S. Norhafizah, M. F. Fatin, and R. M. Ayub. "Fabrication of Aluminum Interdigitated Electrode for Biosensor Application Using Conventional Lithography." Advanced Materials Research 1109 (June 2015): 118–22. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.118.

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A simple technique for the fabrication of interdigitated electrode (IDEs) using conventional lithography was presented. A top-down simple lithography approach was used to fabricate a set of Interdigitated electrodes were patterned with aluminum metal. Silicon dioxide serves to isolate the electrode from the substrate. A chrome mask was proposed to complete this work. In this work, the proposed method was experimentally demonstrated by fabricating the IDEs structure 4-5μm, approximately. The dimensions of structure were determined by using scanning electron microscopy (SEM). It is a simple, easy-to-use and cost effective method and does not require complicated micro-lithography process for fabricating desired microelectrode in reproducible approach.

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Lauria, John, Ronald Albright, Olga Vladimirsky, Maarten Hoeks, Roel Vanneer, Bert van Drieenhuizen, Luoqi Chen, Luc Haspeslagh, and Ann Witvrouw. "SLM device for 193nm lithographic applications." Microelectronic Engineering 86, no. 4-6 (April 2009): 569–72. http://dx.doi.org/10.1016/j.mee.2008.11.022.

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