Relevant bibliographies by topics / STM device fabrication

Academic literature on the topic 'STM device fabrication'

Author: Grafiati
Published: 4 June 2021
Last updated: 19 February 2022

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Journal articles on the topic "STM device fabrication"

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Zhao, Zhiyun, Yi Min, Pengxia Zhou, Yanyan Huang, and Chonggui Zhong. "Photon-assisted transport through a 1D-dot-graphene similar to STM model device." International Journal of Modern Physics B 31, no. 21 (August 18, 2017): 1750142. http://dx.doi.org/10.1142/s0217979217501429.

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By using the nonequilibrium Green function method, the photon-assisted electron transport through a graphene-based device similar to STM model is studied theoretically and numerically. The device is composed of a single central site (quantum dot) modulated by an oscillating electric field, a one-dimensional quantum wire and a two-dimensional graphene sheet. Some interesting results on transmission probability and current–voltage ([Formula: see text]–[Formula: see text]) characteristics of the device are given in this paper. In the presence of an oscillating electric field, we find that besides the central two transmission peaks caused by graphene part, there appear photon-assisted peaks which are distributed on both sides of the Fermi level. The positions of the photon-assisted peaks are linear to the frequency of the oscillating electric field, and the widths of the photon-assisted peaks are relevant to the amplitude of the oscillating electric field. It is found that the current–voltage graphs exhibit step growth due to the existence of photon-assisted tunneling. We hope these results may have guidance meaning for the fabrication of optoelectronic devices.
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Goh, Kuan Eng Johnson, L. Oberbeck, M. J. Butcher, N. J. Curson, F. J. Rueß, and M. Y. Simmons. "Comparison of GaP and PH3 as dopant sources for STM-based device fabrication." Nanotechnology 18, no. 6 (January 10, 2007): 065301. http://dx.doi.org/10.1088/0957-4484/18/6/065301.

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Wada, Kazumi. "Cathodoluminescence characterization of two-dimensional interface structure of quantum wells." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 754–55. http://dx.doi.org/10.1017/s0424820100176903.

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Exotic properties shown by quantum well structures, typical structures of future electron devices, are sensitive to interface roughness. Extensive studies are, thus, focused on characterization of interface structures. Recent improvement in quantum wire fabrication technology demands for characterizing not only perpendicular-interfaces to the growth direction but also parallel-ones (sidewall-interfaces). Such sophistication needs innovation in two-dimensional and nondestructive characterization technology.In device structures, interfaces are generally located deep in bulk. STM which visualize surface atoms can not monitor such interface. It is, thus, difficult to two- dimensionally characterize the interfaces.Interface steps induce well width fluctuation, which modulates optical transition energy between ground subbands in conduction and valence bands. Thus, interface step structures can be characterized by luminescence spectroscopy. Cathodoluminescence basically meets demand for nondestructive characterization of interface structures in two dimensions.
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Joy, David C. "Limitations of Sem Characterization of Semiconductors." Microscopy and Microanalysis 3, S2 (August 1997): 875–76. http://dx.doi.org/10.1017/s1431927600011260.

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The field of semiconductor materials and devices represents a unique challenge to microscopy and microanalysis because the standard of excellence is constantly changing. Driven by the imperative of Moore's law (illustrated in figure 1) - which predicts that the density of devices in a chip doubles every three years - the spatial resolution that must be achieved increases by a factor of two every five years. The problem of meeting this demand is further enhanced by the widespread sentiment that all e-beam tools used on semiconductors should operate at low beam energies (typically below lkeV). Finally, the increase in device packing density and the expected move to 30cm. diameter wafers as substrates for fabrication also means that the microscopist will be faced with the challenge of rapidly and reliably finding a given device or feature among the 108 or so similar features which are present.The first need is to be able to monitor the basic steps of the fabrication process. Given the assumption that by the year 2001 devices will be built on 0.18μm design rules, it will then be necessary to perform critical dimension metrology with a precision of 2 to 3nm (see figure 2).
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XIE, XIAN NING, HONG JING CHUNG, and ANDREW THYE SHEN WEE. "SCANNING PROBE MICROSCOPY BASED NANOSCALE PATTERNING AND FABRICATION." COSMOS 03, no. 01 (November 2007): 1–21. http://dx.doi.org/10.1142/s0219607707000207.

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Nanotechnology is vital to the fabrication of integrated circuits, memory devices, display units, biochips and biosensors. Scanning probe microscope (SPM) has emerged to be a unique tool for materials structuring and patterning with atomic and molecular resolution. SPM includes scanning tunneling microscopy (STM) and atomic force microscopy (AFM). In this chapter, we selectively discuss the atomic and molecular manipulation capabilities of STM nanolithography. As for AFM nanolithography, we focus on those nanopatterning techniques involving water and/or air when operated in ambient. The typical methods, mechanisms and applications of selected SPM nanolithographic techniques in nanoscale structuring and fabrication are reviewed.
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Kajimura, Koji. "STM as a Micromachine." Journal of Robotics and Mechatronics 3, no. 1 (February 20, 1991): 12–17. http://dx.doi.org/10.20965/jrm.1991.p0012.

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A scanning tunneling microscope (STM) is a kind of micromachine, from an instrumentational and functional point of view. In this paper, the present and future status of key technologies of STM instrumentation and miniaturization are discussed after presenting the principle of STM operation. Application of STM functions to nanometer-scale fabrication and ultimate modification of surfaces on an atomic or molecular scale will pave the way for future electron devices and the synthesis of new materials.
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Seniutinas, Gediminas, Armandas Balčytis, Ignas Reklaitis, Feng Chen, Jeffrey Davis, Christian David, and Saulius Juodkazis. "Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies." Nanophotonics 6, no. 5 (June 17, 2017): 923–41. http://dx.doi.org/10.1515/nanoph-2017-0008.

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AbstractThe evolution of optical microscopy from an imaging technique into a tool for materials modification and fabrication is now being repeated with other characterization techniques, including scanning electron microscopy (SEM), focused ion beam (FIB) milling/imaging, and atomic force microscopy (AFM). Fabrication and in situ imaging of materials undergoing a three-dimensional (3D) nano-structuring within a 1−100 nm resolution window is required for future manufacturing of devices. This level of precision is critically in enabling the cross-over between different device platforms (e.g. from electronics to micro-/nano-fluidics and/or photonics) within future devices that will be interfacing with biological and molecular systems in a 3D fashion. Prospective trends in electron, ion, and nano-tip based fabrication techniques are presented.
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Ervin, M. H., K. A. Jones, M. A. Derenge, K. W. Kirchnef, M. C. Wood, P. B. Shah, R. D. Vispute, T. Venkatesan, C. Thomas, and M. G. Spencer. "An SEM Investigation of Annealing Encapsulants for SiC." Microscopy and Microanalysis 6, S2 (August 2000): 1094–95. http://dx.doi.org/10.1017/s143192760003796x.

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Advancing technology continues to place greater and greater demands on semiconductor devices. It is clear that Si technology alone will not be able to meet all of these demands. Silicon Carbide (SiC) is a promising material for highpower and high-temperature applications, such as SiC devices for controlling power in a more electric vehicle in which the SiC device is cooled by the engine oil (200 C.) SiC is well suited for high-power/temperature applications due to its large bandgap of 3.03 eV (for 6H), high breakdown electric field of 2.4 x 106 V/cm (again for 6H), thermal stability, and chemical inertness. These properties hold the promise of reliable and robust performance, but the latter two also present challenges to fabricating such devices. For instance, a key part of making devices involves selected area doping. This is typically accomplished with ion implantation, because the rate of diffusion is so low, followed with an anneal to remove the implant damage and electrically activate the dopant.
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Shin, Jin Yong, Young Taek Oh, Simon Kim, Hoe Yeon Lim, Bom Lee, Young Chun Ko, Shin Park, et al. "Hierarchical Self-Assembly of Thickness-Modulated Block Copolymer Thin Films for Controlling Nanodomain Orientations inside Bare Silicon Trenches." Polymers 13, no. 4 (February 13, 2021): 553. http://dx.doi.org/10.3390/polym13040553.

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We study the orientation and ordering of nanodomains of a thickness-modulated lamellar block copolymer (BCP) thin film at each thickness region inside a topological nano/micropattern of bare silicon wafers without chemical pretreatments. With precise control of the thickness gradient of a BCP thin film and the width of a bare silicon trench, we successfully demonstrate (i) perfectly oriented lamellar nanodomains, (ii) pseudocylindrical nanopatterns as periodically aligned defects from the lamellar BCP thin film, and (iii) half-cylindrical nanostructure arrays leveraged by a trench sidewall with the strong preferential wetting of the PMMA block of the BCP. Our strategy is simple, efficient, and has an advantage in fabricating diverse nanopatterns simultaneously compared to conventional BCP lithography utilizing chemical pretreatments, such as a polymer brush or a self-assembled monolayer (SAM). The proposed self-assembly nanopatterning process can be used in energy devices and biodevices requiring various nanopatterns on the same device and as next-generation nanofabrication processes with minimized fabrication steps for low-cost manufacturing techniques.
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Lee, Hun Hee, Min Sang Yun, Hyun Wook Lee, and Jin Goo Park. "Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study." Solid State Phenomena 195 (December 2012): 128–31. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.128.

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As the feature size of semiconductor device shrinks continuously, various high-K metals for 3-D structures have been applied to improve the device performance, such as high speed and low power consumption. Metal gate fabrication requires the removal of metal and polymer residues after etching process without causing any undesired etching and corrosion of metals. The conventional sulfuric-peroxide mixture (SPM) has many disadvantages like the corrosion of metals, environmental issues etc., DSP+(dilute sulfuric-peroxide-HF mixture) chemical is currently used for the removal of post etch residues on device surface, to replace the conventional SPM cleaning [. Due to the increased usage of metal gate in devices in recent times, the application of DSP+chemicals for cleaning processes also increases [.
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Dissertations / Theses on the topic "STM device fabrication"

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Ruess, Frank Joachim Physics Faculty of Science UNSW. "Atomically controlled device fabrication using STM." Awarded by:University of New South Wales. Physics, 2006. http://handle.unsw.edu.au/1959.4/24855.

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We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and silicon MBE, we then go on to fabricate several planar Si:P devices on one chip, including control devices that demonstrate the efficiency of each stage of the fabrication process. We demonstrate that we can perform four terminal magnetoconductance measurements at cryogenic temperatures after ex-situ alignment of metal contacts to the buried device. Using this process, we demonstrate the lateral confinement of P dopants in a delta-doped plane to a line of width 90nm; and observe the cross-over from 2D to 1D magnetotransport. These measurements enable us to extract the wire width which is in excellent agreement with STM images of the patterned wire. We then create STM-patterned Si:P wires with widths from 90nm to 8nm that show ohmic conduction and low resistivities of 1 to 20 micro Ohm-cm respectively ??? some of the highest conductivity wires reported in silicon. We study the dominant scattering mechanisms in the wires and find that temperature-dependent magnetoconductance can be described by a combination of both 1D weak localisation and 1D electron-electron interaction theories with a potential crossover to strong localisation at lower temperatures. We present results from STM-patterned tunnel junctions with gap sizes of 50nm and 17nm exhibiting clean, non-linear characteristics. We also present preliminary conductance results from a 70nm long and 90nm wide dot between source-drain leads which show evidence of Coulomb blockade behaviour. The thesis demonstrates the viability of using STM lithography to make devices in silicon down to atomic-scale dimensions. In particular, we show the enormous potential of this technology to directly correlate images of the doped regions with ex-situ electrical device characteristics.
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Ghosh, Joydeep. "Fabrication of laterally stacked spin devices by semiconductor processing." Master's thesis, Universitätsbibliothek Chemnitz, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-91779.

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This work presents a new approach of fabricating arrays of electrodes, separated by sub-micrometer gaps allowing the systematic investigation of electric properties of organic semiconductors. The laterally stacked devices are fabricated by using a trench isolation technique for separating different electrical potentials, as it is known for micromachining technologies like Single Crystal Reactive Ion Etching and Metallization (SCREAM). The essential part of this process is the patterning of sub-micrometer trenches onto the silicon substrate in a single lithographic step. Afterwards, the trenches are refilled by SiO2 to allow the precise tuning of the electrode separation gap. The metal electrodes are formed via magnetron sputtering. This technological approach allows us to fabricate device structures with a transport channel length in the range of 100-250 nm by conventional photolithography. In this experiment, three different metals like Au, Co, and Ni were used as the electrode materials, while copper phthalocyanine, being deposited by thermal evaporation in high vacuum, was employed as the organic semiconductor under evaluation. The final aim has been study of spin transport through the organic channel in varied geometry.
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Zimmerman, Ellen L. "2D and 3D Fabrication Devices: Can They Improve Spatial Reasoning Skills in Children?" Thesis, University of North Texas, 2016. https://digital.library.unt.edu/ark:/67531/metadc862838/.

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The purpose of this study is to evaluate the potential benefit of two hours of activities involving 2D and 3D fabricators on the spatial reasoning skills of children in Grades 4 and 5, ages 9 to 10, from a private school in Southeast Texas. Can the introduction to hands-on activities with products created with these devices and learning about how these devices operate improve spatial reasoning skills? The research also evaluates the use of the Shapes Test as a valid measure of the spatial reasoning skills of children. The Cube Design and Spatial Memory subtests of the UNIT (Universal Nonverbal Intelligence Tests) were used for evaluating the spatial reasoning skills of the participants, based on their respected validity, along with a Shapes Test that is in development. Discussion regarding gender, language, and experiential theories of spatial reasoning skill development are included in the literature review.
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Sháněl, Ondřej. "Vývoj a aplikace metod zařízení pro studium lokálních vlastností nanostruktur." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2008. http://www.nusl.cz/ntk/nusl-227949.

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Vývoj UHV kompatibilního kombinovaného systému AFM/SEM. Modifikace předchozího AFM mikroskopu pro podmínky spojené s tímto systémem. Výzkum transportu elektrického náboje v organických solárních článcích pomocí měření jejich volt-ampérových charakteristik a povrchového potenciálu. Příprava zlatých hrotů pro STM netoxickou cestou.
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Book chapters on the topic "STM device fabrication"

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Fouad, Damiri, Yahya Bachra, Grouli Ayoub, Amine Ouaket, Ahmed Bennamara, Noureddine Knouzi, and Mohammed Berrada. "A Novel Drug Delivery System Based on Nanoparticles of Magnetite Fe3O4 Embedded in an Auto Cross-Linked Chitosan." In Chitin and Chitosan - Physicochemical Properties and Industrial Applications [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94873.

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Recently, chitosan (CS) was given much attention as a functional biopolymer for designing various hydrogels for industrial, environmental and biomedical applications, but their biomedical use is limited due to the toxicity of the crosslinker agents. To overcome this inconvenience, we developed an auto cross-linked material based on a chitosan backbone that carries an amino and aldehyde moieties. This new drug delivery system (DDS) was designed by using oxidized chitosan (OCS) that crosslinks chitosan (CS). In the first part, a simple, rapid, low-cost and eco-friendly green method was introduced to synthesize magnetite nanoparticles (Fe3O4-NPs) successfully. These nanoparticles Fe3O4 have received a great deal of attention in the biomedical field. Especially in a targeted drug delivery system, drug-loaded Fe3O4-NPs can accumulate at the tumor site by the aid of an external magnetic field and increase the effectiveness of drug release to the tumor site. In the second part, we have incorporated the Fe3O4-NPs into chitosan/oxidized chitosan solution because of their unique magnetic properties, outstanding magnetism, biocompatibility, lower toxicity, biodegradability, and other features. Three drugs (5-Fluorouracil (5-FU), Caffeine and Ascorbic acid)) were embedded into the magnetite solution that became quickly a hydrogel. The successful fabrication of the hydrogels and ferrogels was confirmed by (FT-IR), (TGA), (SEM), (VSM) analysis at room temperature. Finally, results showed that our hydrogels and ferrogels may be technologically used as devices for drug delivery in a controllable manner.
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Conference papers on the topic "STM device fabrication"

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Desai, A. V., and M. A. Haque. "Design and Fabrication of a Novel MEMS Device for High Resolution Force and Displacement Measurement." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-59432.

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We present the design and fabrication of a MEMS device for high resolution force and displacement measurements. Both quantitative and qualitative measurements can be performed in-situ in scanning, transmission and tunneling electron microcopy (SEM, TEM and STM), where the small chamber size makes it challenging to integrate conventional force-displacement sensors. The device exploits the amplification of displacement and attenuation of structural stiffness due to buckling of slender silicon beams to obtain pico-Newton force and nanometer displacement resolution. The design uses buckling of two sets of beams of slightly different lengths to create a loading device. The amplification of the specimen deformation into the micron range enables measurement by visual inspection (optical microscope) without using complex displacement sensing mechanism. Co-fabrication of the specimen with the device is possible, thus eliminating the problems associated with alignment and positioning. The device can be used for characterization of materials such as carbon nanotube-polymer interfaces, nanoscale thin films and mechanical testing of single biological cells.
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Tian, Bohan, Hongbin Ma, Yang Deming, Jiujun Xu, Zhiyong Wang, and Nannan Zhao. "A Novel Thermal Solution for Electronics: Alumina Flat-Plate Oscillating Heat Pipe." In ASME 2019 6th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/mnhmt2019-3936.

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Abstract The heat flux in electronics requires the thermal management of printed circuit boards (PCBs) using two-phase cooling methods. In this study, an integrated ceramic heat transfer device, the alumina flat-plate oscillating heat pipe, is developed. The device was fabricated by pressing and sintering procedures, and the inner serpentine channels were simultaneously formed during sintering without brazing or separated caps. This novel manufacturing process simplifies the fabrication of the macrochannels inside ceramic devices and provides a new method for fabricating ceramic two-phase cooling devices. This paper presents an analysis of the internal channel’s formation mechanism and illustrates the major factors of densification. Micro-computed tomography (Micro-CT) scanning was adopted to assess the macrostructure, and SEM was used to characterize the microstructure of the alumina OHP. Water was charged inside the device as the working fluid. The effects of the power input, orientation, operating temperature and filling ratio on the heat transfer performance were investigated. The experimental results show that the alumina OHP has a high heat transport capability. When the OHP structure is embedded inside the alumina and charged with water, the thermal resistance can be reduced by 97%.
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Singh, Gurpreet, Paul Rice, Richard J. McIntosh, and Roop L. Mahajan. "Fabrication and Mechanical Characterization of Carbon Nanotube Based Nanoknives." In ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-14659.

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A prototype microtome knife for cutting ~100 nm thick slices of frozen-hydrated biological samples has been constructed by use of multiwalled carbon nanotubes (MWCNT). A piezoelectric-based 3-D manipulator was used inside a scanning electron microscope (SEM) to select and position individual MWCNTs, which were subsequently welded in place by electron beam-induced deposition (EBID). The device employs a pair of tungsten needles with provision to adjust the distance between the needle tips, accommodating various lengths of MWCNTs. We have performed experiments to test the breaking strength of the MWCNT in the completed device with an atomic force microscope (AFM) tip. An increasing force was applied at the midpoint of the nanotube until failure, which was observed in situ in the SEM. The initial force/deflection data appear promising, and efforts are underway to characterize and improve the strength of the device by conducting more such tests and modifying the welding process.
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Hua, Y. N., Z. R. Guo, L. H. An, and Shailesh Redkar. "Failure Analysis of Killer Defects and Yield Enhancement of Flat ROM Devices in Wafer Fabrication." In ISTFA 2000. ASM International, 2000. http://dx.doi.org/10.31399/asm.cp.istfa2000p0063.

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Abstract In this paper, some low yield cases in Flat ROM device (0.45 and 0.6 µm) were investigated. To find killer defects and particle contamination, KLA, bitmap and emission microscopy techniques were used in fault isolation. Reactive ion etching (RIE) and chemical delayering, 155 Wright Etch, BN+ Etch and scanning electron microscope (SEM) were used for identification and inspection of defects. In addition, energy-dispersive X-ray microanalysis (EDX) was used to determine the composition of the particle or contamination. During failure analysis, seven kinds of killer defects and three killer particles were found in Flat ROM devices. The possible root causes, mechanisms and elimination solutions of these killer defects/particles were also discussed.
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Aukes, Daniel M., and Robert J. Wood. "Algorithms for Rapid Development of Inherently-Manufacturable Laminate Devices." In ASME 2014 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/smasis2014-7442.

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We present several algorithms suited for the generation and analysis of structures used in manufacturing laminate electro-mechanical devices. These devices may be fabricated by a family of related manufacturing processes such as printed-circuit MEMS (PC-MEMS) smart composite microstructures (SCM), or lamina emergent mechanisms (LEM), which, by utilizing multi-material laminate composites, enables kinematic motion, component embedding, and monolithic fabrication of high-precision millimeter-scale features. The presented algorithms enable rapid generation of manufacturing features such as support structures and cut files, while facilitating integration with the user’s design intent and available material removal processes. An exemplar device is presented, which, though simple in concept, could not be manufactured without the aid of an expert designer to produce the same features generated by these algorithms.
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Emery, Travis S., Anna Jensen, Koby Kubrin, and Michael G. Schrlau. "Facilitating Fluid Flow Through Carbon Nanotube Arrays Using 3D Printing." In ASME 2017 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/imece2017-71656.

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Three-dimensional (3D) printing is a novel technology whose versatility allows it to be implemented in a multitude of applications. Common fabrication techniques implemented to create microfluidic devices, such as photolithography, wet etching, etc., can often times be time consuming, costly, and make it difficult to integrate external components. 3D printing provides a quick and low-cost technique that can be used to fabricate microfluidic devices in a range of intricate geometries. External components, such as nanoporous membranes, can additionally be easily integrated with minimal impact to the component. Here in, low-cost 3D printing has been implemented to create a microfluidic device to enhance understanding of flow through carbon nanotube (CNT) arrays manufactured for gene transfection applications. CNTs are an essential component of nanofluidic research due to their unique mechanical and physical properties. CNT arrays allow for parallel processing however, they are difficult to construct and highly prone to fracture. As a means of aiding in the nanotube arrays’ resilience to fracture and facilitating its integration into fluidic systems, a 3D printed microfluidic device has been constructed around these arrays. Doing so greatly enhances the robustness of the system and additionally allows for the nanotube array to be implemented for a variety of purposes. To broaden their range of application, the devices were designed to allow for multiple isolated inlet flows to the arrays. Utilizing this multiple inlet design permits distinct fluids to enter the array disjointedly. These 3D printed devices were in turn implemented to visualize flow through nanotube arrays. The focus of this report though, is on the design and fabrication of the 3D printed devices. SEM imaging of the completed device shows that the nanotube array remains intact after the printing process and the nanotubes, even those within close proximity to the printing material, remain unobstructed. Printing on top of the nanotube arrays displayed effective adhesion to the surface thus preventing leakage at these interfaces.
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Nalbach, Joseph R., Dave Jao, Douglas G. Petro, Kyle M. Raudenbush, Shibbir Ahmad, Ye Xue, Xiao Hu, and Wei Xue. "Fabrication of Tunable Silk Materials Through Microfluidic Mixers." In ASME 2016 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/imece2016-65623.

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A common method to precisely control the material properties is to evenly distribute functional nanomaterials within the substrate. For example, it is possible to mix a silk solution and nanomaterials together to form one tuned silk sample. However, the nanomaterials are likely to aggregate in the traditional manual mixing processes. Here we report a pilot study of utilizing specific microfluidic mixing designs to achieve a uniform nanomaterial distribution with minimal aggregation. Mixing patterns are created based on classic designs and then validated by experimental results. The devices are fabricated on polydimethylsiloxane (PDMS) using 3D printed molds and soft lithography for rapid replication. The initial mixing performance is validated through the mixing of two solutions with colored dyes. The microfluidic mixer designs are further analyzed by creating silk-based film samples. The cured film is inspected with scanning electron microscopy (SEM) to reveal the distribution uniformity of the dye particles within the silk material matrix. Our preliminary results show that the microfluidic mixing produces uniform distribution of dye particles. Because the microfluidic device can be used as a continuous mixing tool, we believe it will provide a powerful platform for better preparation of silk materials. By using different types of nanomaterials such as graphite (demonstrated in this study), graphene, carbon nanotubes, and magnetic nanoparticles, the resulting silk samples can be fine-tuned with desired electrical, mechanical, and magnetic properties.
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Lv, Jianan, Zhenchuan Yang, and Kevin J. Chen. "Fabrication of Suspending GAN Microstructures With Combinations of Anisotropic and Isotropic Dry Etching Techniques." In 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2008. http://dx.doi.org/10.1115/micronano2008-70037.

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A method for fabricating gallium nitride (GaN) based microelectromechanical (MEM) devices on silicon substrate was demonstrated. Various suspended GaN microstructures have been fabricated using ICP (Inductive coupled plasma)-based sacrificial etching of the underlying silicon with combination of both anisotropic and isotropic etching techniques, so that deeply released freestanding microstructures with minimized lateral undercut can be achieved. Cl2-based ICP-RIE (Reactive ion etching) dry etching technique is employed to pattern gallium nitride. The experimental results show that freestanding GaN microstructures with large air gap of high depth-to-width ratio can be realized by employing such two-step dry releasing technique. Fabrication results have been characterized by scanning electron microscope (SEM).
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Hakala, Chris, James Clarke, Mark Biedrzycki, Kesley Price, Jamie Johnson, and Gavin Mitchson. "Automated Gas-Enhanced PFIB Surface Preparation Enabled Metrology and Statistical Analysis of 3D NAND Devices." In ISTFA 2019. ASM International, 2019. http://dx.doi.org/10.31399/asm.cp.istfa2019p0227.

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Abstract The development of vertical 3D NAND technology over the past 5 years has been accelerated by the parallel development of metrology techniques capable of characterizing these device stacks. Current trends point toward a continuous scaling of dimensions along the z-axis, involving a critical etch step with aspect ratios of ~50:1. These high aspect ratio process steps present both fabrication and metrology challenges where the channel holes can bend, bow, and pinch off throughout the stack. Work presented herein demonstrates the capability of an automated workflow developed using the Thermo Scientific™ Helios™ G4 HXe DualBeam™ platform. The workflow iteratively exposes desired layers within the NAND stack, collects high resolution SEM images, and performs metrology to enable statistical analysis of trends as a function of depth within the stack. Results will be presented from 3 sites in an automatically delayered 72-layer 3D NAND die. Automated SEM metrology was performed every 10 layers, capturing more than 6000 devices. Over 19000 measurements were made on imaged devices yielding assessment of statistically significant trends in the planar cell area, eccentricity, and position of the bits as a function of depth.
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Serafin, Stacey N., and Terrance Dishongh. "Manufacturability of Large SMT Connectors." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-33073.

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Abstract:
With the advent of higher signaling frequencies on today’s motherboard, evolution suggests that the electronic industry is near a phase transition of going from through hole mount to surface mount connectors. Current computer infrastructure supports assembly of motherboards using through hole mount connectors from a historical standpoint. This legacy has led placement equipment manufacturers to develop fabrication machines that do not consider long, thin devices such as a PCI or DIMM connector. The reassessment of the world’s method of motherboard manufacturing presents a challenge. Hence the question arises, what is the realistic lifetime of a through hole mount connector and what are the assembly and reliability issues associated with a proposed replacement such as a surface mount connector. This paper addresses the basic reliability concerns of a long, thin, surface mount PCI connector both with, and without retention features.
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