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1

Agusalim, Lestari. "PAJAK EKSPOR, PERTUMBUHAN EKONOMI, DAN PENDAPATAN: KASUS AGROINDUSTRI DI INDONESIA." KINERJA 18, no. 2 (February 21, 2017): 180. http://dx.doi.org/10.24002/kinerja.v18i2.529.

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This research aims to analyze whether export tax policy and the policy of productivity increment of agro industry based upstream and downstream sectors can increase real GDP growth, agro industry output, andhousehold income. The model used in this research is a comparative static Computable General Equilibrium (CGE) model. The data used are from the 2008 Input-Output Table, the 2008 System Accounting Matrix (SAM)Table, and other relevant suporting sources. The three simulations conducted in this research are: (1) export tax policy on agro industry’s upstream sector (SIM1), (2) export tax and productivity increment policies on agro industry’s upstream sector (SIM2), and (3) export tax and productivity increment policies on agro industry’s upstream and downstream sectors (SIM3). The three simulations will be adjusted to the government’s policies to suport agro industries’ downstream. SIM1 has negative effect on real GDP and only increases agro industry output in certain sectors only. SIM2 and SIM3 have positive effect on real GDP and increases agro industryoutput. All simulations increase non-agricultural household incomes, and decrease agricultural household incomes.Keywords: agroindustry, export tax, real GDP, household income
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2

Gilmore, I. S., and M. P. Seah. "Static SIMS: towards unfragmented mass spectra — the G-SIMS procedure." Applied Surface Science 161, no. 3-4 (July 2000): 465–80. http://dx.doi.org/10.1016/s0169-4332(00)00317-2.

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3

Hoshi, T., and M. Kudo. "High resolution static SIMS imaging by time of flight SIMS." Applied Surface Science 203-204 (January 2003): 818–24. http://dx.doi.org/10.1016/s0169-4332(02)00834-6.

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4

Gilmore, I. S., and M. P. Seah. "Static SIMS inter-laboratory study." Surface and Interface Analysis 29, no. 9 (2000): 624–37. http://dx.doi.org/10.1002/1096-9918(200009)29:9<624::aid-sia908>3.0.co;2-f.

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5

YAMABE, Hidetoshi, and Kazue SHINGU. "Application of Static SIMS for Colour Materials." Journal of the Japan Society of Colour Material 68, no. 5 (1995): 294–300. http://dx.doi.org/10.4011/shikizai1937.68.294.

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6

Nieradko, M., N. W. Ghonaim, L. Xi, H. Y. Nie, J. Francis, O. Grizzi, K. Yeung, and W. M. Lau. "Primary ion fluence dependence in time-of-flight SIMS of a self-assembled monolayer of octadecylphosphonic acid molecules on mica discussion of static limit." Canadian Journal of Chemistry 85, no. 12 (December 1, 2007): 1075–82. http://dx.doi.org/10.1139/v07-123.

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By using a self-assembled monolayer of octadecylphosphonic acid molecules, CH3(CH2)17PO(OH)2, on mica as a model of the “soft” materials, such as self-assembled monolayers (SAMs) and multilayers in many biological systems as well as artificially engineered molecular electronic systems, we have examined the effects of primary ion fluence on time-of-flight secondary ion mass spectrometry (TOF-SIMS) of the technologically important model. Our measurements clearly show that although the intensity per unit primary ion fluence of most atomic ions and many small fragment ions do not vary by more than 10% for the fluence range of 1010–1013 cm–2, the intensity of the parent molecular ion can drop by two orders of magnitude in this fluence range. While the changes are different for the primary ion beams of Bi3+ (25 keV, 45°), Bi+ (25 keV, 45°), and Ar+ (8 keV, 45°), they are all substantial, with the damage cross section induced by the Bi3+ beam being the largest (6 000 Å2). Since different secondary ions have quite different intensity changes, the analytical results derived from TOF-SIMS can vary significantly by the time and duration of the measurements in the TOF-SIMS experiment. Therefore, our results suggest that for TOF-SIMS of molecular layers such as SAMs, the primary ion fluence condition should be recorded and reported. In general, the validity of the static condition becomes questionable when the cumulative primary ion fluence exceeds 1 × 1011 cm–2.Key words: SIMS, static SIMS, TOF-SIMS, soft materials, self-assembled monolayer, bilayer, surface of biological materials.
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7

Gilmore, I. S., and M. P. Seah. "Static SIMS: metastable decay and peak intensities." Applied Surface Science 144-145 (April 1999): 26–30. http://dx.doi.org/10.1016/s0169-4332(98)00757-0.

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8

Matolı́n, V., and V. Johánek. "Static SIMS study of TiZrV NEG activation." Vacuum 67, no. 2 (September 2002): 177–84. http://dx.doi.org/10.1016/s0042-207x(02)00111-2.

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9

Johansson, Leena-Sisko. "Static SIMS studies of coated TiO2 pigments." Surface and Interface Analysis 20, no. 4 (April 1993): 304–8. http://dx.doi.org/10.1002/sia.740200407.

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10

Licciardello, Antonino, Salvatore Pignataro, Angelika Leute, and Alfred Benninghoven. "Dimerization of polystyrene during static SIMS measurements." Surface and Interface Analysis 20, no. 6 (May 30, 1993): 549–51. http://dx.doi.org/10.1002/sia.740200611.

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11

Zehnpfenning, J., E. Niehuis, H. Rulle, and A. Benninghoven. "Effect of Ga+ backscattering in static SIMS." Surface and Interface Analysis 21, no. 8 (August 1994): 566–70. http://dx.doi.org/10.1002/sia.740210809.

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12

Licciardello, A., B. Wenclawiak, C. Boes, and A. Benninghoven. "Radiation effects in static SIMS of polymers." Surface and Interface Analysis 22, no. 1-12 (July 1994): 528–31. http://dx.doi.org/10.1002/sia.7402201112.

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13

Travaly, Y., and P. Bertrand. "Static SIMS investigation of metal/polymer interfaces." Surface and Interface Analysis 23, no. 5 (May 1995): 328–34. http://dx.doi.org/10.1002/sia.740230509.

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14

Chew, A., and D. E. Sykes. "Static SIMS using a cameca ims 3f." Surface and Interface Analysis 17, no. 7 (June 16, 1991): 532–35. http://dx.doi.org/10.1002/sia.740170723.

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15

Ogaki, R., F. M. Green, S. Li, M. Vert, M. R. Alexander, I. S. Gilmore, and M. C. Davies. "A comparison of the static SIMS and G-SIMS spectra of biodegradable homo-polyesters." Surface and Interface Analysis 40, no. 8 (August 2008): 1202–8. http://dx.doi.org/10.1002/sia.2866.

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16

Linton, Richard W. "Direct Imaging of Trace Elements, Isotopes, and Molecules Using Mass Spectrometry." Microscopy and Microanalysis 4, S2 (July 1998): 124–25. http://dx.doi.org/10.1017/s1431927600020742.

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Secondary ion mass spectrometry (SIMS) is based upon the energetic ion bombardment of surfaces resulting in in the emission of sputtered particles, including both atomic and molecular ions. The use of mass spectrometric detection provides a highly versatile and sensitive tool for surface and thin film microanalysis. The scope of the technique includes a diversity of analysis modes including:1.Elemental Depth Profiling (dynamic SIMS),2.Laterally Resolved Imaging (ion microprobe or ion microscope analysis),3.Image Depth Profiling (combination of modes 1 and 2 providing 3-D images),4.Molecular Monolayer Analysis and Imaging (static SIMS),5.Sputtered Neutral Mass Spectrometry (post-ionization).Much of the early work in dynamic SIMS centered on depth profiling and imaging techniques, with an emphasis on applications to electronic materials. SIMS has made extensive contributions to semiconductor materials science since the 1960's, including the development of new devices and processes, and in failure analysis.
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17

Linton, Richard W. "Secondary ion mass spectroscopy in the biological and materials sciences." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 498–99. http://dx.doi.org/10.1017/s0424820100148320.

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Secondary ion mass spectrometry (SIMS) is based upon energetic ion bombardment of surfaces resulting in in the emission of sputtered particles, including both atomic and molecular ions. The use of mass spectrometric detection provides a highly versatile and sensitive tool for surface and thin film chemical analysis. In recent years, the scope of the technique has broadened to include a variety of analysis modes including:1.Elemental Depth Profiling (dynamic SIMS),2.Laterally Resolved Imaging (ion microprobe or ion microscope analysis),3.Image Depth Profiling (combination of modes 1 and 2 providing 3-D images),4.Molecular Monolayer Analysis (static SIMS),5.Sputtered Neutral Mass Spectrometry (post-ionization).Much of the early work in dynamic SIMS centered on the development of depth profiling and imaging techniques, with an emphasis on applications to electronic materials. SIMS has made extensive contributions to semiconductor materials science since the 1960's, including the development of new devices and processes, and in failure analysis.
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18

Briggs, David, Alan Brown, J. C. Vickerman, and F. Adams. "Handbook of static secondary ion mass spectrometry (SIMS)." Analytica Chimica Acta 236 (1990): 509–10. http://dx.doi.org/10.1016/s0003-2670(00)83361-9.

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19

Briggs, D. "A proposed standard (PTFE tape) for static SIMS." Surface and Interface Analysis 14, no. 4 (April 1989): 209–12. http://dx.doi.org/10.1002/sia.740140407.

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20

Vickerman, John C., Angela Oakes, and Heather Gamble (aka Donsig). "Static SIMS studies of catalyst structure and activity." Surface and Interface Analysis 29, no. 6 (2000): 349–61. http://dx.doi.org/10.1002/1096-9918(200006)29:6<349::aid-sia822>3.0.co;2-1.

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21

Gilmore, I. S., and M. P. Seah. "Static SIMS: A Study of Damage Using Polymers." Surface and Interface Analysis 24, no. 11 (October 1996): 746–62. http://dx.doi.org/10.1002/(sici)1096-9918(199610)24:11<746::aid-sia177>3.0.co;2-a.

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22

Seo, Satoru, Jon-Chi Chang, Masakazu Matsui, and Hirosi Takami. "Static SIMS Studies of Superconducting YBa2Cu3O7-yThin Films." Japanese Journal of Applied Physics 28, Part 2, No. 6 (June 20, 1989): L994—L996. http://dx.doi.org/10.1143/jjap.28.l994.

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23

Bolbach, G., J. C. Blais, S. Clémendot, and A. Barraud. "Static SIMS studies of Langmuir-Blodgett gas sensors." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 88, no. 1-2 (April 1994): 180–83. http://dx.doi.org/10.1016/0168-583x(94)96101-8.

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24

Delcorte, A., C. Poleunis, and P. Bertrand. "Stretching the limits of static SIMS with C60+." Applied Surface Science 252, no. 19 (July 2006): 6494–97. http://dx.doi.org/10.1016/j.apsusc.2006.02.259.

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25

Leggett, G. J., and J. C. Vickerman. "Sample charging during static SIMS studies of polymers." Applied Surface Science 84, no. 3 (March 1995): 253–66. http://dx.doi.org/10.1016/0169-4332(94)00543-5.

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26

Baig, Nameera F., Sage J. B. Dunham, Nydia Morales-Soto, Joshua D. Shrout, Jonathan V. Sweedler, and Paul W. Bohn. "Multimodal chemical imaging of molecular messengers in emerging Pseudomonas aeruginosa bacterial communities." Analyst 140, no. 19 (2015): 6544–52. http://dx.doi.org/10.1039/c5an01149c.

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27

Schueler, Bruno, and Robert W. Odom. "Applications of Time-OF-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 2 (August 12, 1990): 308–9. http://dx.doi.org/10.1017/s0424820100135149.

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Time-of-flight secondary ion mass spectrometry (TOF-SIMS) provides unique capabilities for elemental and molecular compositional analysis of a wide variety of surfaces. This relatively new technique is finding increasing applications in analyses concerned with determining the chemical composition of various polymer surfaces, identifying the composition of organic and inorganic residues on surfaces and the localization of molecular or structurally significant secondary ions signals from biological tissues. TOF-SIMS analyses are typically performed under low primary ion dose (static SIMS) conditions and hence the secondary ions formed often contain significant structural information.This paper will present an overview of current TOF-SIMS instrumentation with particular emphasis on the stigmatic imaging ion microscope developed in the authors’ laboratory. This discussion will be followed by a presentation of several useful applications of the technique for the characterization of polymer surfaces and biological tissues specimens. Particular attention in these applications will focus on how the analytical problem impacts the performance requirements of the mass spectrometer and vice-versa.
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28

Odom, Robert W. "Molecular surface analysis by TOF-SIMS." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1556–57. http://dx.doi.org/10.1017/s0424820100132418.

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Time-of-flight secondary ion mass spectrometry (TOF-SIMS) performs surface sensitive analysis of the elemental and molecular composition of solids. TOFSIMS is a relatively new embodiment of static secondary ion mass spectrometry (SSIMS) in which the dose of primary ions incident on the surface is typically less than 1012 ions/cm2. Since typical solid surfaces have an atomic density of 1015 atoms/cm2, this primary ion dose nominally removes less than 0.1% of a monolayer. Hence, SIMS analyses performed under these static conditions represent near surface analysis in which secondary ions are produced from the top few monolayers of the surface. The actual sampling depth is determined by the primary ion momentum, angle of incidence and chemistry of the surface. Since low dose primary ions cause minimal perturbation of the chemistry of the solid surface, SSIMS analyses often produce molecular or pseudo-molecular ions characteristic of the chemical composition of the surface. Thus, molecular ions or structurally significant fragment ions are often observed in SSIMS analyses of surfaces containing inorganic and organic residues, polymers surfaces, coatings, and biological materials such as tissues and membranes.
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29

Leute, Angelika, Derk Rading, Alfred Benninghoven, Kathrin Schroeder, and Doris Klee. "Static SIMS investigation of immobilized molecules on polymer surfaces." Advanced Materials 6, no. 10 (October 1994): 775–80. http://dx.doi.org/10.1002/adma.19940061014.

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30

Aubriet, Fr�d�ric, Claude Poleunis, and Patrick Bertrand. "Characterization of lead-titanium-oxygen compounds by static SIMS." Surface and Interface Analysis 34, no. 1 (2002): 754–58. http://dx.doi.org/10.1002/sia.1404.

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31

Watts, John F. "Surface analysis of polymers by XPS and static SIMS." Surface Engineering 14, no. 4 (January 1998): 290. http://dx.doi.org/10.1179/sur.1998.14.4.290.

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32

Van Velzen, P. N. T., P. E. Wierenga, R. C. F. Schaake, D. Van Leyen, and A. Benninghoven. "Surface Characterization of Particulate Video Tapes by Static SIMS." Tribology Transactions 31, no. 4 (January 1988): 489–96. http://dx.doi.org/10.1080/10402008808981853.

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33

Bertrand, Patrick. "Static SIMS for analysis of molecular conformation and orientation." Applied Surface Science 252, no. 19 (July 2006): 6986–91. http://dx.doi.org/10.1016/j.apsusc.2006.02.147.

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34

Wee, A. T. S., C. H. A. Huan, R. Gopalakrishnan, K. L. Tan, E. T. Kang, K. G. Neoh, and H. Shirakawa. "Static SIMS of polyacetylene: the effect of chain unsaturation." Synthetic Metals 45, no. 2 (November 1991): 227–34. http://dx.doi.org/10.1016/0379-6779(91)91807-m.

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35

Basgall, E. J., and N. Winograd. "Uncoated Lvsem and Imaging Tof-Sims of Unfixed, Plunge Frozen, Freeze Dried, Fungal and Plant Material." Microscopy and Microanalysis 4, S2 (July 1998): 850–51. http://dx.doi.org/10.1017/s1431927600024375.

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A Cryosorption Freeze Drying (CFD) system was evaluated for its effectiveness in preparing delicate biological materials for both low voltage-field emission scanning electron microscopy (LVFESEM) and imaging liquid metal (Ga) ion beam, static time-of-flight, secondary ion mass spectrometry (TOF-SIMS). The primary goals of these studies were to investigate the retention of both structural and chemical integrity using fresh cryoprepared biological material which had not been exposed to any chemical fixation and which would not be coated by any conductive material in order to obtain information from the native surfaces. Duplicate chemically fixed samples were processed for comparison. LV-FESEM (2-2.5kV) was used to assess the quality of the structural preservation of the freezing and freeze drying (FD) protocols. Imaging static TOF-SIMS was used to investigate the surface chemical compositions of the biological samples.
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36

Gilmore, I. S., F. M. Green, and M. P. Seah. "Static TOF-SIMS. A VAMAS interlaboratory study. Part II - accuracy of the mass scale and G-SIMS compatibility." Surface and Interface Analysis 39, no. 10 (September 11, 2007): 817–25. http://dx.doi.org/10.1002/sia.2596.

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37

Gilmore, I. S., and M. P. Seah. "Static SIMS: ion detection efficiencies in a channel electron multiplier." Applied Surface Science 144-145 (April 1999): 113–17. http://dx.doi.org/10.1016/s0169-4332(98)00779-x.

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38

Wood, B. J., R. N. Lamb, and C. L. Raston. "Static SIMS study of hydroxylation of low-surface-area silica." Surface and Interface Analysis 23, no. 10 (September 1995): 680–88. http://dx.doi.org/10.1002/sia.740231006.

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39

Shaw, A. D., M. M. Cortez, A. K. Gianotto, A. D. Appelhans, J. E. Olson, C. Karahan, R. Avci, and G. S. Groenewold. "Static SIMS analysis of carbonate on basic alkali-bearing surfaces." Surface and Interface Analysis 35, no. 3 (2003): 310–17. http://dx.doi.org/10.1002/sia.1534.

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40

Shard, A. G., S. Clarke, and M. C. Davies. "Static SIMS analysis of random poly (lactic-co-glycolic acid)." Surface and Interface Analysis 33, no. 6 (2002): 528–32. http://dx.doi.org/10.1002/sia.1414.

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41

Verdier, S., J. B. Metson, and H. M. Dunlop. "Static SIMS studies of the oxides and hydroxides of aluminium." Journal of Mass Spectrometry 42, no. 1 (January 2007): 11–19. http://dx.doi.org/10.1002/jms.1121.

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42

Steffens, P., E. Niehuis, T. Friese, D. Greifendorf, and A. Benninghoven. "A time‐of‐flight mass spectrometer for static SIMS applications." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3, no. 3 (May 1985): 1322–25. http://dx.doi.org/10.1116/1.573058.

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43

Zhu, X. Y., S. Akhter, M. E. Castro, and J. M. White. "Kinetic studies using static SIMS: H2 adsorption on Ni(100)." Surface Science 195, no. 1-2 (January 1988): L145—L149. http://dx.doi.org/10.1016/0039-6028(88)90773-x.

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44

Huan, C. H. A., A. T. S. Wee, R. Gopalakrishnan, K. L. Tan, E. T. Kang, K. G. Neoh, and D. J. Liaw. "Static SIMS of conjugated polymers: films of the substituted polyacetylenes." Synthetic Metals 53, no. 2 (January 1993): 193–203. http://dx.doi.org/10.1016/0379-6779(93)90890-9.

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45

Benninghoven, A. "High-performance time - of - flight SIMS." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1550–51. http://dx.doi.org/10.1017/s0424820100132388.

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Progress in many fields of science and technology strongly depends on the availability of appropriate analytical techniques. This becomes increasingly true for all surface related technologies. A most important analytical information concerns the chemical composition of the uppermost monolayers. This information should be supplied with high sensitivity and high resolution, not only for the elemental but also for the molecular surface composition.Time - of - Flight SIMS supplies this molecular information, which cannot be obtained by other surface analytical techniques as AES (Auger electron spectroscopy), XPS (photoelectron spectroscopy), electron microscopy or the electron microprobe. The extremely high transmission allows static SIMS surface analysis with high lateral and mass resolution. Depending on the primary ion source, lateral resolutions below 100 nm are achieved. The Time - of - Flight technique allows parallel acquisition of a large number of ion images. It features an unlimited mass range obtained with an ultimate sensitivity based upon the parallel mass registration and the high transmission.
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46

Li, Quan-Wen, Jun-Liang Liu, Jian-Hua Jia, Yan-Cong Chen, Jiang Liu, Long-Fei Wang, and Ming-Liang Tong. "“Half-sandwich” YbIII single-ion magnets with metallacrowns." Chemical Communications 51, no. 51 (2015): 10291–94. http://dx.doi.org/10.1039/c5cc03389f.

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Two “half-sandwich” YbIII-SIMs are presented bearing metallacrowns. The central ytterbium ion is coordinated by YbO8 geometry in D4d symmetry. The analysis of static, dynamic magnetism and emission spectrum offers an insight into the magneto-optical correlation.
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47

Cejudo, Antonio, Josep María Centenera-Centenera, and Fernando Santonja-Medina. "Sagittal Integral Morphotype of Competitive Amateur Athletes and Its Potential Relation with Recurrent Low Back Pain." International Journal of Environmental Research and Public Health 18, no. 16 (August 4, 2021): 8262. http://dx.doi.org/10.3390/ijerph18168262.

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Athletes have higher thoracic and lumbar curvature in standing than the reference values of the non-athletic population. The sagittal integral morphotype method (SIM) assessment has not previously been applied to competitive amateur athletes (CAA). The propose of the present study was to determine the SIM of CAA treated at a sports-medicine center and to identify spinal misalignments associated with recurrent low back pain (LBP). An observational analysis was developed to describe the SIM in 94 CAA. The thoracic and lumbar curvatures of the CAA were measured in standing, sitting, and trunk forward flexion. Association analysis (Pearson’s chi-square and Cramér’s V tests) was then performed to identify the SIM misalignments associated with LBP. Effect size was analyzed based on Hedges’ g. The most common thoracic SIMs in CAA were total hyperkyphosis (male = 59.02%; female = 42.42%) and static hyperkyphosis (male = 11.48%; female = 6.06%). Hyperlordotic attitude (female = 30.30%; male = 4.92%), static-functional hyperkyphosis (male = 16.39%; female = 3.03%), and structured hyperlordosis (female = 21.21%; male = 1.64%) were the most common lumbar SIMs. Hyperlordotic attitude, static functional lumbar hyperkyphosis, and structured hyperlordosis were associated with LBP in male and female athletes.
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48

HAYASHI, Yasuo, and Kiyoshi MATSUMOTO. "Determination of Surface Silanol Group on Silicate Glasses Using Static SIMS." Journal of the Ceramic Society of Japan 100, no. 1164 (1992): 1038–41. http://dx.doi.org/10.2109/jcersj.100.1038.

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49

Van Ham, R., A. Adriaens, L. Van Vaeck, R. Gijbels, and F. Adams. "Molecular information in static SIMS for the speciation of inorganic compounds." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 161-163 (March 2000): 245–49. http://dx.doi.org/10.1016/s0168-583x(99)00750-8.

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50

Leggett, Graham J., Buddy D. Ratner, and John C. Vickerman. "Characterization of plasma-deposited styrene films by XPS and static SIMS." Surface and Interface Analysis 23, no. 1 (January 1995): 22–28. http://dx.doi.org/10.1002/sia.740230104.

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