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Journal articles on the topic 'Static SIMS'

Author: Grafiati

Published: 28 June 2021

Last updated: 1 February 2022

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1

Gilmore, I. S., and M. P. Seah. "Static SIMS inter-laboratory study." Surface and Interface Analysis 29, no. 9 (2000): 624–37. http://dx.doi.org/10.1002/1096-9918(200009)29:9<624::aid-sia908>3.0.co;2-f.

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2

Gilmore, I. S., and M. P. Seah. "Static SIMS: towards unfragmented mass spectra — the G-SIMS procedure." Applied Surface Science 161, no. 3-4 (July 2000): 465–80. http://dx.doi.org/10.1016/s0169-4332(00)00317-2.

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3

Hoshi, T., and M. Kudo. "High resolution static SIMS imaging by time of flight SIMS." Applied Surface Science 203-204 (January 2003): 818–24. http://dx.doi.org/10.1016/s0169-4332(02)00834-6.

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4

YAMABE, Hidetoshi, and Kazue SHINGU. "Application of Static SIMS for Colour Materials." Journal of the Japan Society of Colour Material 68, no. 5 (1995): 294–300. http://dx.doi.org/10.4011/shikizai1937.68.294.

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5

Gilmore, I. S., and M. P. Seah. "Static SIMS: metastable decay and peak intensities." Applied Surface Science 144-145 (April 1999): 26–30. http://dx.doi.org/10.1016/s0169-4332(98)00757-0.

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6

Matolı́n, V., and V. Johánek. "Static SIMS study of TiZrV NEG activation." Vacuum 67, no. 2 (September 2002): 177–84. http://dx.doi.org/10.1016/s0042-207x(02)00111-2.

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7

Johansson, Leena-Sisko. "Static SIMS studies of coated TiO2 pigments." Surface and Interface Analysis 20, no. 4 (April 1993): 304–8. http://dx.doi.org/10.1002/sia.740200407.

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8

Licciardello, Antonino, Salvatore Pignataro, Angelika Leute, and Alfred Benninghoven. "Dimerization of polystyrene during static SIMS measurements." Surface and Interface Analysis 20, no. 6 (May 30, 1993): 549–51. http://dx.doi.org/10.1002/sia.740200611.

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9

Zehnpfenning, J., E. Niehuis, H. Rulle, and A. Benninghoven. "Effect of Ga+ backscattering in static SIMS." Surface and Interface Analysis 21, no. 8 (August 1994): 566–70. http://dx.doi.org/10.1002/sia.740210809.

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10

Licciardello, A., B. Wenclawiak, C. Boes, and A. Benninghoven. "Radiation effects in static SIMS of polymers." Surface and Interface Analysis 22, no. 1-12 (July 1994): 528–31. http://dx.doi.org/10.1002/sia.7402201112.

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11

Travaly, Y., and P. Bertrand. "Static SIMS investigation of metal/polymer interfaces." Surface and Interface Analysis 23, no. 5 (May 1995): 328–34. http://dx.doi.org/10.1002/sia.740230509.

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12

Chew, A., and D. E. Sykes. "Static SIMS using a cameca ims 3f." Surface and Interface Analysis 17, no. 7 (June 16, 1991): 532–35. http://dx.doi.org/10.1002/sia.740170723.

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13

Briggs, David, Alan Brown, J. C. Vickerman, and F. Adams. "Handbook of static secondary ion mass spectrometry (SIMS)." Analytica Chimica Acta 236 (1990): 509–10. http://dx.doi.org/10.1016/s0003-2670(00)83361-9.

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14

Briggs, D. "A proposed standard (PTFE tape) for static SIMS." Surface and Interface Analysis 14, no. 4 (April 1989): 209–12. http://dx.doi.org/10.1002/sia.740140407.

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15

Vickerman, John C., Angela Oakes, and Heather Gamble (aka Donsig). "Static SIMS studies of catalyst structure and activity." Surface and Interface Analysis 29, no. 6 (2000): 349–61. http://dx.doi.org/10.1002/1096-9918(200006)29:6<349::aid-sia822>3.0.co;2-1.

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16

Gilmore, I. S., and M. P. Seah. "Static SIMS: A Study of Damage Using Polymers." Surface and Interface Analysis 24, no. 11 (October 1996): 746–62. http://dx.doi.org/10.1002/(sici)1096-9918(199610)24:11<746::aid-sia177>3.0.co;2-a.

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17

Seo, Satoru, Jon-Chi Chang, Masakazu Matsui, and Hirosi Takami. "Static SIMS Studies of Superconducting YBa2Cu3O7-yThin Films." Japanese Journal of Applied Physics 28, Part 2, No. 6 (June 20, 1989): L994—L996. http://dx.doi.org/10.1143/jjap.28.l994.

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18

Bolbach, G., J. C. Blais, S. Clémendot, and A. Barraud. "Static SIMS studies of Langmuir-Blodgett gas sensors." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 88, no. 1-2 (April 1994): 180–83. http://dx.doi.org/10.1016/0168-583x(94)96101-8.

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19

Delcorte, A., C. Poleunis, and P. Bertrand. "Stretching the limits of static SIMS with C60+." Applied Surface Science 252, no. 19 (July 2006): 6494–97. http://dx.doi.org/10.1016/j.apsusc.2006.02.259.

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20

Leggett, G. J., and J. C. Vickerman. "Sample charging during static SIMS studies of polymers." Applied Surface Science 84, no. 3 (March 1995): 253–66. http://dx.doi.org/10.1016/0169-4332(94)00543-5.

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21

Ogaki, R., F. M. Green, S. Li, M. Vert, M. R. Alexander, I. S. Gilmore, and M. C. Davies. "A comparison of the static SIMS and G-SIMS spectra of biodegradable homo-polyesters." Surface and Interface Analysis 40, no. 8 (August 2008): 1202–8. http://dx.doi.org/10.1002/sia.2866.

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22

Leute, Angelika, Derk Rading, Alfred Benninghoven, Kathrin Schroeder, and Doris Klee. "Static SIMS investigation of immobilized molecules on polymer surfaces." Advanced Materials 6, no. 10 (October 1994): 775–80. http://dx.doi.org/10.1002/adma.19940061014.

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23

Aubriet, Fr�d�ric, Claude Poleunis, and Patrick Bertrand. "Characterization of lead-titanium-oxygen compounds by static SIMS." Surface and Interface Analysis 34, no. 1 (2002): 754–58. http://dx.doi.org/10.1002/sia.1404.

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24

Watts, John F. "Surface analysis of polymers by XPS and static SIMS." Surface Engineering 14, no. 4 (January 1998): 290. http://dx.doi.org/10.1179/sur.1998.14.4.290.

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25

Van Velzen, P. N. T., P. E. Wierenga, R. C. F. Schaake, D. Van Leyen, and A. Benninghoven. "Surface Characterization of Particulate Video Tapes by Static SIMS." Tribology Transactions 31, no. 4 (January 1988): 489–96. http://dx.doi.org/10.1080/10402008808981853.

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26

Bertrand, Patrick. "Static SIMS for analysis of molecular conformation and orientation." Applied Surface Science 252, no. 19 (July 2006): 6986–91. http://dx.doi.org/10.1016/j.apsusc.2006.02.147.

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27

Wee, A. T. S., C. H. A. Huan, R. Gopalakrishnan, K. L. Tan, E. T. Kang, K. G. Neoh, and H. Shirakawa. "Static SIMS of polyacetylene: the effect of chain unsaturation." Synthetic Metals 45, no. 2 (November 1991): 227–34. http://dx.doi.org/10.1016/0379-6779(91)91807-m.

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28

Nieradko, M., N. W. Ghonaim, L. Xi, H. Y. Nie, J. Francis, O. Grizzi, K. Yeung, and W. M. Lau. "Primary ion fluence dependence in time-of-flight SIMS of a self-assembled monolayer of octadecylphosphonic acid molecules on mica discussion of static limit." Canadian Journal of Chemistry 85, no. 12 (December 1, 2007): 1075–82. http://dx.doi.org/10.1139/v07-123.

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Abstract:

By using a self-assembled monolayer of octadecylphosphonic acid molecules, CH3(CH2)17PO(OH)2, on mica as a model of the “soft” materials, such as self-assembled monolayers (SAMs) and multilayers in many biological systems as well as artificially engineered molecular electronic systems, we have examined the effects of primary ion fluence on time-of-flight secondary ion mass spectrometry (TOF-SIMS) of the technologically important model. Our measurements clearly show that although the intensity per unit primary ion fluence of most atomic ions and many small fragment ions do not vary by more than 10% for the fluence range of 1010–1013 cm–2, the intensity of the parent molecular ion can drop by two orders of magnitude in this fluence range. While the changes are different for the primary ion beams of Bi3+ (25 keV, 45°), Bi+ (25 keV, 45°), and Ar+ (8 keV, 45°), they are all substantial, with the damage cross section induced by the Bi3+ beam being the largest (6 000 Å2). Since different secondary ions have quite different intensity changes, the analytical results derived from TOF-SIMS can vary significantly by the time and duration of the measurements in the TOF-SIMS experiment. Therefore, our results suggest that for TOF-SIMS of molecular layers such as SAMs, the primary ion fluence condition should be recorded and reported. In general, the validity of the static condition becomes questionable when the cumulative primary ion fluence exceeds 1 × 1011 cm–2.Key words: SIMS, static SIMS, TOF-SIMS, soft materials, self-assembled monolayer, bilayer, surface of biological materials.

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29

Odom, Robert W. "Molecular surface analysis by TOF-SIMS." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1556–57. http://dx.doi.org/10.1017/s0424820100132418.

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Time-of-flight secondary ion mass spectrometry (TOF-SIMS) performs surface sensitive analysis of the elemental and molecular composition of solids. TOFSIMS is a relatively new embodiment of static secondary ion mass spectrometry (SSIMS) in which the dose of primary ions incident on the surface is typically less than 1012 ions/cm2. Since typical solid surfaces have an atomic density of 1015 atoms/cm2, this primary ion dose nominally removes less than 0.1% of a monolayer. Hence, SIMS analyses performed under these static conditions represent near surface analysis in which secondary ions are produced from the top few monolayers of the surface. The actual sampling depth is determined by the primary ion momentum, angle of incidence and chemistry of the surface. Since low dose primary ions cause minimal perturbation of the chemistry of the solid surface, SSIMS analyses often produce molecular or pseudo-molecular ions characteristic of the chemical composition of the surface. Thus, molecular ions or structurally significant fragment ions are often observed in SSIMS analyses of surfaces containing inorganic and organic residues, polymers surfaces, coatings, and biological materials such as tissues and membranes.

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30

Baig, Nameera F., Sage J. B. Dunham, Nydia Morales-Soto, Joshua D. Shrout, Jonathan V. Sweedler, and Paul W. Bohn. "Multimodal chemical imaging of molecular messengers in emerging Pseudomonas aeruginosa bacterial communities." Analyst 140, no. 19 (2015): 6544–52. http://dx.doi.org/10.1039/c5an01149c.

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31

Gilmore, I. S., and M. P. Seah. "Static SIMS: ion detection efficiencies in a channel electron multiplier." Applied Surface Science 144-145 (April 1999): 113–17. http://dx.doi.org/10.1016/s0169-4332(98)00779-x.

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32

Wood, B. J., R. N. Lamb, and C. L. Raston. "Static SIMS study of hydroxylation of low-surface-area silica." Surface and Interface Analysis 23, no. 10 (September 1995): 680–88. http://dx.doi.org/10.1002/sia.740231006.

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33

Shaw, A. D., M. M. Cortez, A. K. Gianotto, A. D. Appelhans, J. E. Olson, C. Karahan, R. Avci, and G. S. Groenewold. "Static SIMS analysis of carbonate on basic alkali-bearing surfaces." Surface and Interface Analysis 35, no. 3 (2003): 310–17. http://dx.doi.org/10.1002/sia.1534.

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34

Shard, A. G., S. Clarke, and M. C. Davies. "Static SIMS analysis of random poly (lactic-co-glycolic acid)." Surface and Interface Analysis 33, no. 6 (2002): 528–32. http://dx.doi.org/10.1002/sia.1414.

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35

Verdier, S., J. B. Metson, and H. M. Dunlop. "Static SIMS studies of the oxides and hydroxides of aluminium." Journal of Mass Spectrometry 42, no. 1 (January 2007): 11–19. http://dx.doi.org/10.1002/jms.1121.

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36

Steffens, P., E. Niehuis, T. Friese, D. Greifendorf, and A. Benninghoven. "A time‐of‐flight mass spectrometer for static SIMS applications." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3, no. 3 (May 1985): 1322–25. http://dx.doi.org/10.1116/1.573058.

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37

Zhu, X. Y., S. Akhter, M. E. Castro, and J. M. White. "Kinetic studies using static SIMS: H2 adsorption on Ni(100)." Surface Science 195, no. 1-2 (January 1988): L145—L149. http://dx.doi.org/10.1016/0039-6028(88)90773-x.

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38

Huan, C. H. A., A. T. S. Wee, R. Gopalakrishnan, K. L. Tan, E. T. Kang, K. G. Neoh, and D. J. Liaw. "Static SIMS of conjugated polymers: films of the substituted polyacetylenes." Synthetic Metals 53, no. 2 (January 1993): 193–203. http://dx.doi.org/10.1016/0379-6779(93)90890-9.

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39

Linton, Richard W. "Direct Imaging of Trace Elements, Isotopes, and Molecules Using Mass Spectrometry." Microscopy and Microanalysis 4, S2 (July 1998): 124–25. http://dx.doi.org/10.1017/s1431927600020742.

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Secondary ion mass spectrometry (SIMS) is based upon the energetic ion bombardment of surfaces resulting in in the emission of sputtered particles, including both atomic and molecular ions. The use of mass spectrometric detection provides a highly versatile and sensitive tool for surface and thin film microanalysis. The scope of the technique includes a diversity of analysis modes including:1.Elemental Depth Profiling (dynamic SIMS),2.Laterally Resolved Imaging (ion microprobe or ion microscope analysis),3.Image Depth Profiling (combination of modes 1 and 2 providing 3-D images),4.Molecular Monolayer Analysis and Imaging (static SIMS),5.Sputtered Neutral Mass Spectrometry (post-ionization).Much of the early work in dynamic SIMS centered on depth profiling and imaging techniques, with an emphasis on applications to electronic materials. SIMS has made extensive contributions to semiconductor materials science since the 1960's, including the development of new devices and processes, and in failure analysis.

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40

Linton, Richard W. "Secondary ion mass spectroscopy in the biological and materials sciences." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 498–99. http://dx.doi.org/10.1017/s0424820100148320.

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Abstract:

Secondary ion mass spectrometry (SIMS) is based upon energetic ion bombardment of surfaces resulting in in the emission of sputtered particles, including both atomic and molecular ions. The use of mass spectrometric detection provides a highly versatile and sensitive tool for surface and thin film chemical analysis. In recent years, the scope of the technique has broadened to include a variety of analysis modes including:1.Elemental Depth Profiling (dynamic SIMS),2.Laterally Resolved Imaging (ion microprobe or ion microscope analysis),3.Image Depth Profiling (combination of modes 1 and 2 providing 3-D images),4.Molecular Monolayer Analysis (static SIMS),5.Sputtered Neutral Mass Spectrometry (post-ionization).Much of the early work in dynamic SIMS centered on the development of depth profiling and imaging techniques, with an emphasis on applications to electronic materials. SIMS has made extensive contributions to semiconductor materials science since the 1960's, including the development of new devices and processes, and in failure analysis.

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41

Gilmore, I. S., F. M. Green, and M. P. Seah. "Static TOF-SIMS. A VAMAS interlaboratory study. Part II - accuracy of the mass scale and G-SIMS compatibility." Surface and Interface Analysis 39, no. 10 (September 11, 2007): 817–25. http://dx.doi.org/10.1002/sia.2596.

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42

Basgall, E. J., and N. Winograd. "Uncoated Lvsem and Imaging Tof-Sims of Unfixed, Plunge Frozen, Freeze Dried, Fungal and Plant Material." Microscopy and Microanalysis 4, S2 (July 1998): 850–51. http://dx.doi.org/10.1017/s1431927600024375.

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A Cryosorption Freeze Drying (CFD) system was evaluated for its effectiveness in preparing delicate biological materials for both low voltage-field emission scanning electron microscopy (LVFESEM) and imaging liquid metal (Ga) ion beam, static time-of-flight, secondary ion mass spectrometry (TOF-SIMS). The primary goals of these studies were to investigate the retention of both structural and chemical integrity using fresh cryoprepared biological material which had not been exposed to any chemical fixation and which would not be coated by any conductive material in order to obtain information from the native surfaces. Duplicate chemically fixed samples were processed for comparison. LV-FESEM (2-2.5kV) was used to assess the quality of the structural preservation of the freezing and freeze drying (FD) protocols. Imaging static TOF-SIMS was used to investigate the surface chemical compositions of the biological samples.

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43

HAYASHI, Yasuo, and Kiyoshi MATSUMOTO. "Determination of Surface Silanol Group on Silicate Glasses Using Static SIMS." Journal of the Ceramic Society of Japan 100, no. 1164 (1992): 1038–41. http://dx.doi.org/10.2109/jcersj.100.1038.

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44

Van Ham, R., A. Adriaens, L. Van Vaeck, R. Gijbels, and F. Adams. "Molecular information in static SIMS for the speciation of inorganic compounds." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 161-163 (March 2000): 245–49. http://dx.doi.org/10.1016/s0168-583x(99)00750-8.

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45

Leggett, Graham J., Buddy D. Ratner, and John C. Vickerman. "Characterization of plasma-deposited styrene films by XPS and static SIMS." Surface and Interface Analysis 23, no. 1 (January 1995): 22–28. http://dx.doi.org/10.1002/sia.740230104.

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46

van Ooij, W. J., M. Nahmias, and A. Brown. "Application of static SIMS to the study of rubber cross-linking." Surface and Interface Analysis 11, no. 10 (July 1988): 539–41. http://dx.doi.org/10.1002/sia.740111009.

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47

Castner, David G., and Buddy D. Ratner. "Surface characterization of butyl methacrylate polymers by XPS and static SIMS." Surface and Interface Analysis 15, no. 8 (August 1990): 479–86. http://dx.doi.org/10.1002/sia.740150807.

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48

Choi, Bernard K., Arkady I. Gusev, Marwan Houalla, and David M. Hercules. "Investigation of static SIMS signal enhancement by halide acid substrate treatment." Surface and Interface Analysis 29, no. 4 (April 2000): 284–91. http://dx.doi.org/10.1002/(sici)1096-9918(200004)29:4<284::aid-sia741>3.0.co;2-r.

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49

Benninghoven, A. "Static SIMS applications—From silicon single crystal oxidation to DNA sequencing." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3, no. 3 (May 1985): 451–60. http://dx.doi.org/10.1116/1.573015.

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50

Cocco, R. A., C. Papageorgopoulos, and B. J. Tatarchuk. "Static sims measurements during explosive desorption: Desorption-induced recombination and cationization." Surface Science 218, no. 1 (August 1989): 167–77. http://dx.doi.org/10.1016/0039-6028(89)90625-0.

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