Relevant bibliographies by topics / SSRDM

Academic literature on the topic 'SSRDM'

Author: Grafiati
Published: 4 June 2021
Last updated: 11 February 2022

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Journal articles on the topic "SSRDM"

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Boerner, Katelynn E., Katherine Green, Andrea Chapman, Elizabeth Stanford, Theresa Newlove, Katherine Edwards, and Amrit Dhariwal. "Making Sense of “Somatization”: A Systematic Review of its Relationship to Pediatric Pain." Journal of Pediatric Psychology 45, no. 2 (February 17, 2020): 156–69. http://dx.doi.org/10.1093/jpepsy/jsz102.

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Abstract Objectives Pain and other physical symptoms commonly co-occur in childhood. There is debate about the relevance of somatization in understanding pain. The present review critically appraised and synthesized the extant literature on the relationship between pediatric pain and somatization. Methods A systematic review (PROSPERO registration #95956) was conducted in Medline, PsycINFO, EMBASE, and CINAHL using search terms related to pain and somatization in children and adolescents. A total of 156 articles were eligible for inclusion in the review. For studies that measured somatization using a symptom questionnaire, descriptions of “somatization” were extracted. Data regarding the relationship between pain and somatization were extracted for studies measuring somatization using a diagnostic category (e.g., Somatic Symptom and Related Disorders [SSRDs]). Results While many studies using somatic symptom questionnaires described somatization as having a psychological component, this was not always captured in measurement tools. Pain was reported as a common symptom in patients with an SSRD diagnosis, though rates varied depending on the specific diagnosis and pain location. Rates of SSRD diagnoses among pain patients were less frequent than rates of pain amongst SSRD patients. Conclusions SSRDs and pain commonly co-occur, though rates differ depending on diagnosis and pain location. Understanding the relationship between pain and somatization is complicated by the discrepancy between how somatization is defined and measured in questionnaire studies. A comprehensive and measurable definition of somatization is needed so researchers can better identify the shared and unique contributions of pain and somatization in pediatric populations.
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Winarizal, Afiah Salsabila, Anita Horvath, and Susan M. Sawyer. "Measuring functional recovery in somatic symptom and related disorders: a scoping review." Archives of Disease in Childhood 105, no. 11 (May 12, 2020): 1086–92. http://dx.doi.org/10.1136/archdischild-2020-318955.

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ObjectiveSomatic symptom and related disorders (SSRDs) are prevalent, heterogenous conditions that have the potential to profoundly affect normative function in children and adolescents. Yet there is little understanding of pathways to recovery. This study aimed to systematically scope how functional recovery has been measured in children and adolescents with SSRD .DesignScoping review of primary studies.MethodMedline (Ovid) and PsychInfo were systematically searched for publications from January 1998 to April 2019. Primary studies in English that reported functional outcomes of children and adolescents with SSRD were included. Case reports and population studies were excluded. Within the tools and clinician notes, the core domains of functional outcome were identified.ResultsSixteen studies were identified that used 11 different functional outcome tools. The domains assessed within these functional outcome tools, together with the domains noted by clinicians, included physical and mental health symptoms, as well as school attendance and academic outcomes, recreational participation, impact on family and service utilisation. There was no evidence of a preferred outcome measure as only two of the tools were used in more than one study.ConclusionsThe variability of tools and domains used to measure functional recovery in children and adolescents with SSRD suggests lack of conceptual agreement about what constitutes functional recovery. Continued focus on symptom measurement or mental health comorbidities risks limiting research to single types of disorder (eg, functional neurological disability) or interventions, which threatens a much needed wider research agenda around appropriate treatment, including of complex and persistent disorders.
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Edwards, H., and M. Lejk. "SSADM developer's handbook." Information and Software Technology 32, no. 2 (March 1990): 164–65. http://dx.doi.org/10.1016/0950-5849(90)90118-b.

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Artelt, Thomas, Daniel T. L. Shek, and Bruce A. Thyer. "Using Single-system Research Designs to Evaluate Practice." International Social Work 46, no. 2 (April 1, 2003): 163–76. http://dx.doi.org/10.1177/0020872803046002003.

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The use of single-system research designs (SSRDs) has the potential to help social workers empirically evaluate the outcomes of practice. Descriptions of using SSRDs to evaluate social work practice are provided. SSRDs have the potential to help social workers in Chinese contexts to provide scientifically credible evidence to others that social services benefit the people.
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O'Brien, S. J., and D. A. Jones. "Function points in SSADM." Software Quality Journal 2, no. 1 (March 1993): 1–11. http://dx.doi.org/10.1007/bf00417423.

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de Vroege, Lars, Anique Timmermans, Willem J. Kop, and Christina M. van der Feltz-Cornelis. "Neurocognitive dysfunctioning and the impact of comorbid depression and anxiety in patients with somatic symptom and related disorders: a cross-sectional clinical study." Psychological Medicine 48, no. 11 (December 4, 2017): 1803–13. http://dx.doi.org/10.1017/s0033291717003300.

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BackgroundThe prevalence and severity of neurocognitive dysfunctioning of patients with somatic symptom and related disorders (SSRD) is unknown. Furthermore, the influence of comorbid depression and anxiety has not been evaluated. This study examines neurocognitive dysfunctioning of patients with SSRD and explores if comorbid depression and anxiety is associated with specific neurocognitive dysfunctioning.MethodsCross-sectional study with consecutive patients suffering from SSRD visiting an outpatient specialty mental health care Centre of Excellence for SSRD. Extensive neuropsychological assessment and assessment of depression and anxiety symptom levels using the Patient-Health-Questionnaire-9 and General Anxiety Disorder questionnaire-7 were performed at intake. Multivariate analysis was performed.ResultsThe study sample consisted of 201 SSRD patients, with a mean age of 43 years (Standard deviation = 13) years; 37.8% were male. Neurocognitive dysfunction in the domains information processing speed, sustained and divided attention, working memory, verbal and visual memory were reported, compared with normative data. Comorbid depression and anxiety occurred frequently within the sample (75.1% and 65.7%, respectively). Neurocognitive dysfunctioning was worse in patients suffering from comorbid depression [multivariateF(7,161) = 2.839,p= 0.008] but not in patients with comorbid anxiety.ConclusionsPoor neurocognitive performance of patients with SSRD is common and worsens in case of comorbid depression. This may explain treatment dropout of patients with SSRD from neurocognitive behavioral therapy. Research on novel interventions is needed targeting neurocognitive functioning of patients with SSRD, particularly those with comorbid depression.
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BRIGO, DAMIANO, and LAURENT COUSOT. "THE STOCHASTIC INTENSITY SSRD MODEL IMPLIED VOLATILITY PATTERNS FOR CREDIT DEFAULT SWAP OPTIONS AND THE IMPACT OF CORRELATION." International Journal of Theoretical and Applied Finance 09, no. 03 (May 2006): 315–39. http://dx.doi.org/10.1142/s0219024906003597.

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In this paper we investigate implied volatility patterns in the Shifted Square Root Diffusion (SSRD) model as functions of the model parameters. We begin by recalling the Credit Default Swap (CDS) options market model that is consistent with a market Black-like formula, thus introducing a notion of implied volatility for CDS options. We examine implied volatilities coming from SSRD prices and characterize the qualitative behavior of implied volatilities as functions of the SSRD model parameters. We introduce an analytical approximation for the SSRD implied volatility that follows the same patterns in the model parameters and that can be used to have a first rough estimate of the implied volatility following a calibration. We compute numerically the CDS-rate volatility smile for the adopted SSRD model. We find a decreasing pattern of SSRD implied volatilities in the interest-rate/intensity correlation. We check whether it is possible to assume zero correlation after the option maturity in computing the option price.
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LaVigne, Timothy W., Lauren M. Laake, and Patricia Ibeziako. "Somatic symptom and related disorders in pediatric patients: Associations with parent psychiatric and substance use histories." Clinical Child Psychology and Psychiatry 25, no. 4 (June 9, 2020): 932–44. http://dx.doi.org/10.1177/1359104520931579.

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Parental response to pediatric patients with somatic symptom and related disorders (SSRDs) can impact symptom presentation. However, little is known about the impact of parent psychiatric and substance use disorder (SUD) history on the functional status and medical healthcare utilization of patients with SSRDs. The current study explored the associations between parent psychiatric & SUD history and patient somatic symptoms, functional disability, and hospital course in a medically hospitalized sample of pediatric patients with SSRDs. The electronic medical records of 375 pediatric patients with SSRDs, ages 5 to 18, admitted at a tertiary pediatric hospital were retrospectively reviewed. Parent psychiatric histories were identified in 45.1% of the sample. Parent SUD history and maternal psychiatric history were associated with more patient reported somatization. Parent psychiatric and SUD history were not associated with pediatric patients’ level of functional disability or healthcare utilization during admission, including admission length, number of tests, and number of consultations obtained. This study has implications regarding reduction of potential stigma towards parents with psychiatric or SUD histories whose children are hospitalized with SSRDs. While such histories may provide insights regarding somatization presentation of pediatric patients with these disorders, it may not necessarily impact level of functional disability or hospital course.
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Sun, Xiaodong, Jiangling Wu, Shaohua Wang, Kaikai Diao, and Zebin Yang. "Analysis of torque ripple and fault-tolerant capability for a 16/10 segmented switched reluctance motor in HEV applications." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 38, no. 6 (October 24, 2019): 1725–37. http://dx.doi.org/10.1108/compel-11-2018-0477.

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Purpose The torque ripple and fault-tolerant capability are the two main problems for the switched reluctance motors (SRMs) in applications. The purpose of this paper, therefore, is to propose a novel 16/10 segmented SRM (SSRM) to reduce the torque ripple and improve the fault-tolerant capability in this work. Design/methodology/approach The stator of the proposed SSRM is composed of exciting and auxiliary stator poles, while the rotor consists of a series of discrete segments. The fault-tolerant and torque ripple characteristics of the proposed SSRM are studied by the finite element analysis (FEA) method. Meanwhile, the characteristics of the SSRM are compared with those of a conventional SRM with 8/6 stator/rotor poles. Finally, FEA and experimental results are provided to validate the static and dynamic characteristics of the proposed SSRM. Findings It is found that the proposed novel 16/10 SSRM for the application in the belt-driven starter generator (BSG) possesses these functions: less mutual inductance and high fault-tolerant capability. It is also found that the proposed SSRM provides lower torque ripple and higher output torque. Finally, the experimental results validate that the proposed SSRM runs with lower torque ripple, better output torque and fault-tolerant characteristics, making it an ideal candidate for the BSG and similar systems. Originality/value This paper presents the analysis of torque ripple and fault-tolerant capability for a 16/10 segmented switched reluctance motor in hybrid electric vehicles. Using FEA simulation and building a test bench to verify the proposed SSRM’s superiority in both torque ripple and fault-tolerant capability.
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Sun, X., Z. Xue, S. Han, L. Chen, X. Xu, and Z. Yang. "Comparative study of fault-tolerant performance of a segmented rotor SRM and a conventional SRM." Bulletin of the Polish Academy of Sciences Technical Sciences 65, no. 3 (June 27, 2017): 375–81. http://dx.doi.org/10.1515/bpasts-2017-0042.

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AbstractDue to the separation of magnetic field, electrical isolation and thermal isolation, motor drives possess a high fault-tolerance characteristic. In this paper, comparative study of mutual inductance between the proposed segmented rotor switched reluctance motor (SSRM) and the conventional switched reluctance motor (SRM) is carried out first, illustrating that the proposed SSRM has less mutual inductance between phases than the conventional SRM. In addition, if winding faults or power converter faults lead to phase failure, a comparative analysis on fault-tolerant performance under phase failure condition between the proposed SSRM and the conventional SRM is simulated in detail using the finite element method (FEM). Simulation results reveal that dynamic performance of the proposed SSRM, including output torque and phase current, is better than that of the conventional SRM. That is, the capacity of operating with the fault under phase failure condition in the proposed SSRM is superior to that in the conventional SRM.
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Dissertations / Theses on the topic "SSRDM"

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Hargreaves, Leigh Randall, and harg0032@flinders edu au. "Absolute Electron Scattering Cross Sections for the CF2 Radical." Flinders University. School of Chemsitry, Physics and Earth Sciences, 2008. http://catalogue.flinders.edu.au./local/adt/public/adt-SFU20080430.103821.

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This thesis describes an experimental study of elastic electron scattering from CF2 radicals, in the intermediate energy regime. Measurements of the absolute differential, integral and momentum transfer cross sections for CF2 are presented. These measurements were performed using a new crossed beam spectrometer, incorporating a supersonic gas source and normalised using a new technique, with both of these features being extensively developed as a major part of this study. The organisation of this thesis is as follows: A brief justification for this research is presented in Chapter 1, together with a review of the spectroscopy and electron collision cross sections which are currently available for the CF2 radical. The crossed beamed apparatus and experimental techniques used to perform the present cross section measurements are then described in detail in Chapter 2, and the theory behind the new normalisation technique is subsequently presented in Chapter 3. Results from the present study are given in Chapter 4. Firstly, differential cross sections measurements for stable molecules are presented, to validate the new normalisation method. Characterisation data for the dissociation dynamics of C2F4 into CF2 radicals are then presented and, finally, differential cross section measurements for the CF2 radical are explored. Where possible, the measured data for CF2 are compared against results from theoretical calculations and the implications of the present results are discussed. The major findings of this research are then summarised in Chapter 5, and directions for future research using the present apparatus are also discussed here. Finally, some additional findings from this research and calibration data for the current apparatus are given in the appendices.
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Escovar, Eduardo Luís Garcia. "Algoritmo SSDM para a mineração de dados semanticamente similares." Universidade Federal de São Carlos, 2004. https://repositorio.ufscar.br/handle/ufscar/495.

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Made available in DSpace on 2016-06-02T19:05:56Z (GMT). No. of bitstreams: 1 DissELGE.pdf: 764248 bytes, checksum: 4660cc71261254f054468d04e4659dc6 (MD5) Previous issue date: 2004-05-28
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The SSDM algorithm, created to allow semantically similar data mining, is presented in this work. Using fuzzy logic concepts, this algorithm analyzes the similarity grade between items, considering it if it is greater than a user-defined parameter. When this occurs, fuzzy associations between items are established, and are expressed in the association rules obtained. Therefore, besides associations discovered by conventional algorithms, SSDM also discovers semantic associations, showing them together with the other rules obtained. To do that, strategies are defined to discover these associations and calculate the support and the confidence of the rules where they appear.
Neste trabalho é apresentado o algoritmo SSDM, criado para permitir a mineração de dados semanticamente similares. Usando conceitos de lógica nebulosa, esse algoritmo analisa o grau de similaridade entre os itens, e o considera caso ele seja maior do que um parâmetro definido pelo usuário. Quando isso ocorre, são estabelecidas associações nebulosas entre os itens, que são expressas nas regras de associação obtidas. Assim, além das associações descobertas por algoritmos convencionais, o SSDM também descobre associações semânticas, e as exibe junto às demais regras obtidas. Para isso, são definidas estratégias para descobrir essas associações e para calcular o suporte e a confiança das regras onde elas aparecem.
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Holguín-Sánchez, Fausto Daniel. "Spectral Shape Division Multiplexing (SSDM): Apparatus, Transmitter, Receiver and Detection." DigitalCommons@CalPoly, 2012. https://digitalcommons.calpoly.edu/theses/800.

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Wireless communication companies require to use the frequency spectrum to operate. Both frequency licenses and infrastructure to reuse frequencies are costly resources subject to increasing demand. This work introduces a novel multiplexing method that saves spectrum called Spectral Shape Division Multiplexing (SSDM). Under certain configurations, SSDM displays higher flexibility and throughput than other spectrally efficient methods. SSDM defines the structure of a wireless multi-carrier by software. It is similar to Orthogonal Frequency Division Multiplexing (OFDM) in that both use overlapped sub-carriers to make efficient use of allocated spectrum. However, SSDM has several advantages. Where OFDM organizes sub-carriers orthogonally, SSDM allows arbitrary frequency steps enabling higher spectral efficiency. Similarly, while OFDM and other spectrally efficient methods use sinusoidal pulse forms, SSDM can use non-standard pulses providing a greater control of the carrier. In this thesis, a SSDM transceiver is implemented to reduce the spectrum utilization. SSDM presents an increase in spectral efficiency of 20% average with respect to OFDM. The cost of this gain is higher computational speed and signal to noise ratio. The mathematical models and possible architecture for an SSDM system with sinusoidal pulses is developed. The modem is compared with other spectrally efficient methods. Similarly, the trade-offs between spectral efficiency, bit-error rates, dimension of the carrier and sub-carrier spacing are subject of analysis.
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Östhed, Dick. "Facilitatorns påverkan på en systemutvecklingsmetod." Thesis, University of Skövde, Department of Computer Science, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:his:diva-837.

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Idag finns det många olika systemutvecklingsmetoder och dess strategiska fokus skiljer sig från metod till metod. Vissa metoder använder sig av en mer användarledd strategi till exempel JAD, där användarna får vara med och driva utvecklandet av systemet och få det anpassat efter deras behov. Andra metoder använder en expertdominerad strategi till exempel SSADM, där experterna utvecklar systemet, där experterna utreder vad systemet bör innefatta. Eftersom metodernas strategi och fokus skiljer sig, skiljer de sig även åt när det gäller arbetsprocessen gentemot organisationen. Ett sätt att arbeta gentemot organisationen är att använda sig av en facilitator.

En facilitator är en medlare, assistent som är neutral. Facilitatorn skall stödja gruppen, processen och uppgiften. Denne skall även kunna fungera som en gruppmodelleringsledare.

Denna rapport avser att granska hur en facilitator påverkar en systemutvecklingsmetod, i detta fallet SSADM. Hur facilitatorn påverkar metoden beror väldigt mycket på vem som väljs ut att vara facilitator. Om facilitatorn är kompetent kommer han/hon ha en positiv inverkan på metoden. Om han/hon inte är tillräckligt kompetent kommer det bli en negativ inverkan.

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Lundin, Susanna. "Användarmedverkan i traditionella systemutvecklingsmetoder." Thesis, University of Skövde, Department of Computer Science, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:his:diva-538.

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De problem som följer den traditionella systemutvecklingen är att det är många informationssystem som inte blir implementerade eller använda på grund av att användarna inte accepterat det nya informationssystemet, likaså är ofta projekten överbudgeterade och tidsöverskridande. En av orsakerna till detta är att användarna inte deltar aktivt under utvecklingsprocessen, vilket gör att systemutvecklarna inte får all den information de behöver för att utveckla ett informationssystem som motsvarar förväntningarna.

I detta examensarbete undersöks om tillvägagångssättet participatory design (PD), som innebär att användaren aktivt deltar i hela utvecklingsprocessen, går att integrera med den traditionella systemutvecklingsansatsen, där utvecklingen sker med användarna som stöd till systemutvecklarna.

Integrationen har gjorts genom att dels byta ut tekniker i systemutvecklingsmetoden SSADM och dels genom att kombinera SSADMs tekniker med PD-tekniker. Detta resultat har används tillsammans med intervjuer för att avgöra om PD-tekniker kan användas i alla traditionella systemutvecklingsmetoder. Resultatet av integrationen visar att det är möjligt att integrera PD-tekniker med den traditionella systemutvecklingsansatsen.

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Song, Xi. "Activation des dopants implantés dans le carbure de silicium (3C-SiC et 4H-SiC)." Thesis, Tours, 2012. http://www.theses.fr/2012TOUR4019/document.

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Ces travaux de thèse sont consacrés à l’étude de l’activation des dopants implantés dans le carbure de silicium. L’objectif est de proposer des conditions d’implantation optimisées pour réaliser le dopage de type n dans le 3C-SiC et de type p dans le 4H-SiC.Nous avons tout d’abord étudié les implantations de type n dans le 3C-SiC. Pour cela, des implantations de N, de P et une co-implantation N&P avec les recuits d’activation associés ont été étudiés. L’implantation d’azote suivie d’un recuit à 1400°C-30min a permis une activation proche de 100% tout en conservant une bonne qualité cristalline. Une étude sur les propriétés électriques des défauts étendus dans le 3C-SiC a également été réalisée. A l’aide de mesures SSRM, nous avons mis en évidence l’activité électrique de ces défauts, ce qui rend difficile la réalisation de composants électroniques sur le 3C-SiC.Nous avons ensuite réalisé une étude du dopage de type p par implantation d’Al dans le 4H-SiC, en fonction de la température d’implantation et du recuit d’activation. Nous avons pu montrer qu’une implantation à 200°C suivie d’un recuit à 1850°C-30min donne les meilleures résultats en termes de propriétés physiques et électriques
This work was dedicated to the activation of implanted dopants in 3C-SiC and 4H-SiC. The goal is to propose optimized process conditions for n-type implantation in 3C-SiC and for p-type in 4H-SiC.We have first studied the n-type implantation in 3C-SiC. To do so, N, P implantations, N&P co-implantation and the associated annealings were performed. The nitrogen implanted sample, annealed at 1400°C-30 min evidences a dopant activation rate close to 100% while maintaining a good crystal quality. Furthermore, the electrical properties of extended defects in 3C-SiC have been studied. Using the SSRM measurements, we have evidenced for the first time that these defects have a very high electrical activity and as a consequence on future devices.Then, we have realized a study on p-type doping by Al implantation in 4H-SiC with different implantation and annealing temperatures. Al implantation at 200°C followed by an annealing at 1850°C-30min lead to the best results in terms of physical and electrical properties
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Rodriguez, Nicolas. "Diffusion des dopants dans les dispositifs de la microélectronique : codiffusion de l'arsenic et du phosphore dans le silicium, étude unidimensionnelle et bidimensionnelle." Phd thesis, Université Paul Cézanne - Aix-Marseille III, 2008. http://tel.archives-ouvertes.fr/tel-00353687.

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La diffusion des dopants du Si dans les dispositifs de la microélectronique a été étudiée en 1 et 2 dimensions. Les effets de codiffusion de l'As et du P ont été caractérisés dans le but de la fabrication des « sources » et « drains » des dernières technologies de transistors (90 nm). Nous observons une accélération de la diffusion de l'As et du P lorsque ces 2 dopants sont présents en même temps dans le Si. Cet effet, qui dépend principalement de la dose d'As, semble provenir d'une modification des caractéristiques des clusters AsnV et d'un excès de lacunes dans la zone de coexistence. De plus, nous montrons que la diffusion des dopants peut être étudiée en 2 dimensions dans les dispositifs de la microélectronique, en utilisant les techniques de champ proche électriques (SCM, SSRM) et topographique (AFM). Du fait de leurs principes différents, ces techniques sont complémentaires. Elles trouvent une application en métrologie et en analyse de défaillance.
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Wang, Lin. "Carrier profiling of ZnO nanowire structures by scanning capacitance microscopy and scanning spreading resistance microscopy." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI031/document.

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Ce travail de thèse porte sur l'application des techniques Scanning Capacitance Microscopy (SCM) et Scanning Spreading Resistance Microscopy (SSRM) pour la caractérisation électrique de nanofils de ZnO avec l'objectif d'en déterminer le dopage par profilage des porteurs libres suite à des essais de dopage de type p. Afin de pouvoir utiliser un référentiel planaire nécessaire à ces mesures par sonde locale, un procédé de remplissage par dip-coating et de polissage a été spécialement développé sur des champs de nanofils quasi-verticaux. De plus, dans le but de parvenir à un étalonnage des mesures SCM et SSRM, nous avons conçu et fait fabriquer des échantillons étalons de dopage de type n, contenant des niveaux de Ga en escalier de densité variable de 2×10^17 à 3×10^20 cm^-3. Les mesures sur des coupes transversales de ces deux de structures multicouches ont permis, pour la première fois sur ZnO d'établir un étalonnage des mesures SCM et SSRM et de déterminer le dopage intrinsèque électriquement actif de couches 2D nanométriques, résultat difficilement atteignable par d'autres techniques d'analyse. Des résultats inattendus de concentration résiduelle de porteur de l'ordre de 2×10^18 et 3×10^18 cm^-3 ont été trouvés sur les nanofils de ZnO crus par MOCVD et par CBD respectivement. Outre la caractérisation électrique microscopique des nanofils par SCM et SSRM, des techniques macroscopiques classiques ont été utilisées pour caractériser des assemblées importantes de nanofils de ZnO. L'origine de la difference entre les résultats de deux genres de technique a été discutée. Nous avons aussi étudié les effets des dopages ex-situ par diffusion du phosphore (procédé SOD) et des dopages in situ par incorporation d'antimoine (Sb) pendant la croissance MOCVD. Les résultats majeurs sont obtenus pour l'antimoine, en utilisant des couches ZnO: Sb 2D et des nanofils cœur-coquille ZnO/ZnO: Sb, ou l'hypothèse d'une compensation partielle du dopage n résiduel par un centre accepteur créé par le dopage Sb semble pouvoir être établie raisonnablement
Based on atomic force microscope (AFM), scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) have demonstrated high efficiency for two dimensional (2D) electrical characterizations of Si semiconductors at nanoscale and then have been extensively employed in Si-based structures/devices before being extended to the study of some other semiconductor materials. However, ZnO, a representative of the third generation semiconductor material, being considered a promising candidate for future devices in many areas, especially in opto-electronic area, has rarely been addressed. Recently, extensive research interests have been attracted by ZnO NWs for future devices such as LED, UV laser and sensor. Therefore, a good understanding of electrical properties of the NWs is in need. In this context, this thesis work is dedicated to the 2D electrical characterization of ZnO NWs with the focus of carrier profiling on this kind of nanostructure in the effort of their p-type doping. For this purpose, a planarization process has been developed for the NWs structure in order to obtain an appropriate sample surface and perform SCM/SSRM measurements on the top of the NWs. For quantitative analysis, Ga doped ZnO multilayer staircase structures were developed serving as calibration samples. Finally, residual carrier concentrations inside the CBD and MOCVD grown ZnO NWs are determined to be around 3×10^18 cm^-3 and 2×10^18 cm^-3, respectively. The results from SCM/SSRM characterization have been compared with that from macroscopic C-V measurements on collective ZnO NWs and the differences are discussed. In addition to carrier profiling on NWs structure, applications of SCM/SSRM on some other ZnO-based nanostructures are also investigated including ZnO:Sb films, ZnO/ZnO:Sb core-shell NWs structure, ZnO/ZnMgO core-multishell coaxial heterostructures
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"Algoritmo SSDM para a mineração de dados semanticamente similares." Tese, Biblioteca Digital de Teses e Dissertações da Universidade Federal de São Carlos, 2004. http://www.bdtd.ufscar.br/tde_busca/arquivo.php?codArquivo=391.

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Li-YuHuang and 黃俐瑜. "Applying SSDM to Construct a CRM Model for Health Examination Service." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/83610216265566589234.

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Books on the topic "SSRDM"

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Macdonald, Andy. Select SSADM. [Huddersfield?]: [The University?], 1992.

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Bentley, Colin. SSADM: Using SSADM in a PRINCE environment. Oxford: Butterworth-Heinemann, 1995.

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3

Keith, Robinson. Object oriented SSADM. New York: Prentice Hall, 1994.

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Aue, A., R. Haggenmüller, B. Knuth, M. Pfeiffer, and K. Kobinson. SSADM & GRAPES. Edited by Rudolf Duschl and Nicholas Charles Hopkins. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-49332-4.

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Duncan, Joyce, Lesley Rackley, and Alexandria Walker. SSADM in Practice. London: Macmillan Education UK, 1995. http://dx.doi.org/10.1007/978-1-349-10341-6.

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Systems, Learmonth &. Burchett Management. LBMS SSADM Engineer. [USA]: LBMS, 1992.

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1954-, Goodland Mike, ed. SSADM: A practical approach. London: McGraw-Hill, 1990.

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Introducing SSADM, version 4. Manchester, England: NCC Blackwell, 1992.

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Practical SSADM version 4. London: Pitman Pub., 1993.

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Hill, Michael. SSADM version 4 roles. London: H.M.S.O. (for) CCTA, 1992.

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Book chapters on the topic "SSRDM"

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Duncan, Joyce, Lesley Rackley, and Alexandria Walker. "SSADM — A Critique." In SSADM in Practice, 117–19. London: Macmillan Education UK, 1995. http://dx.doi.org/10.1007/978-1-349-10341-6_11.

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Duncan, Joyce, Lesley Rackley, and Alexandria Walker. "Introduction to Systems Analysis and Design." In SSADM in Practice, 1–14. London: Macmillan Education UK, 1995. http://dx.doi.org/10.1007/978-1-349-10341-6_1.

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Duncan, Joyce, Lesley Rackley, and Alexandria Walker. "Stage 6: Design of the Physical System." In SSADM in Practice, 104–16. London: Macmillan Education UK, 1995. http://dx.doi.org/10.1007/978-1-349-10341-6_10.

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Duncan, Joyce, Lesley Rackley, and Alexandria Walker. "Stage 1: Investigation of Current Environment." In SSADM in Practice, 15–29. London: Macmillan Education UK, 1995. http://dx.doi.org/10.1007/978-1-349-10341-6_2.

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Duncan, Joyce, Lesley Rackley, and Alexandria Walker. "Stage 1: Investigation of Current Environment (Continued)." In SSADM in Practice, 30–39. London: Macmillan Education UK, 1995. http://dx.doi.org/10.1007/978-1-349-10341-6_3.

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Duncan, Joyce, Lesley Rackley, and Alexandria Walker. "Completion of Stage 1 and Stage 2." In SSADM in Practice, 40–46. London: Macmillan Education UK, 1995. http://dx.doi.org/10.1007/978-1-349-10341-6_4.

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Duncan, Joyce, Lesley Rackley, and Alexandria Walker. "Stage 3 — Requirements Specification." In SSADM in Practice, 47–60. London: Macmillan Education UK, 1995. http://dx.doi.org/10.1007/978-1-349-10341-6_5.

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Duncan, Joyce, Lesley Rackley, and Alexandria Walker. "Step 340 — Enhance Required Logical Data Model." In SSADM in Practice, 61–70. London: Macmillan Education UK, 1995. http://dx.doi.org/10.1007/978-1-349-10341-6_6.

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Duncan, Joyce, Lesley Rackley, and Alexandria Walker. "Stage 3: Develop Processing Specification." In SSADM in Practice, 71–83. London: Macmillan Education UK, 1995. http://dx.doi.org/10.1007/978-1-349-10341-6_7.

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Duncan, Joyce, Lesley Rackley, and Alexandria Walker. "Stage 4: Selection of Technical Systems Options." In SSADM in Practice, 84–88. London: Macmillan Education UK, 1995. http://dx.doi.org/10.1007/978-1-349-10341-6_8.

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Conference papers on the topic "SSRDM"

1

Wang, Ruihao, Yangyang Wang, and Mingwei Xu. "SSRDM." In SIGCOMM '20: Annual conference of the ACM Special Interest Group on Data Communication on the applications, technologies, architectures, and protocols for computer communication. New York, NY, USA: ACM, 2020. http://dx.doi.org/10.1145/3405837.3411384.

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Lu, Jing, Ke Bai, and Aviral Shrivastava. "SSDM." In the 50th Annual Design Automation Conference. New York, New York, USA: ACM Press, 2013. http://dx.doi.org/10.1145/2463209.2488918.

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"SSTDM 2008 Message and Committees." In 2008 IEEE International Conference on Data Mining Workshops. IEEE, 2008. http://dx.doi.org/10.1109/icdmw.2008.111.

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Chen, Hsiu-Pin, Jian-Shing Luo, Ching-Shan Sung, Chen-Kang Wei, Kai-Lun Chiang, Chia-Ming Yang, Hsueh-Chun Liao, Jahson Suo, and Shifeng Lu. "Case Study—Doping Profile Analysis for 30 nm DRAM Devices Using SCM and SSRM." In ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0323.

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Abstract This paper is to evaluate the doping profile analysis capability of Scanning Capacitance Microscope (SCM) and Scanning Spreading Resistance Microscope (SSRM) on 30nm Dynamic Random Access Memory (DRAM) devices and apply the SSRM technique on a real case to verify the junction depths of different doping recipes for device performance tuning. The results show SCM can be used on periphery devices in a 30nm DRAM due to they have larger feature size (>90nm). For array devices with minimum feature size (~30nm) in a 30nm DRAM, only SSRM is capable with sufficient spatial resolution and sensitivity to identify the structures and doping profiles. For the real case, SSRM analysis results clarified there is approximate 10nm difference on the junction depth between 2 different doping recipes of samples and the result is consistent with the Technology Computer Aided Design (TCAD) simulation data. In addition, both SCM and SSRM techniques showed the analysis quality does highly rely on the surface cleanness and flatness of samples.
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Shibata, T. "Welcome Address and SSDM Award Presentation." In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.pl-0.

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Schömann, Stephan, and David Álvarez. "Doping Mapping by SSRM–Reaching Maturity and Sub-10nm Resolution." In ISTFA 2004. ASM International, 2004. http://dx.doi.org/10.31399/asm.cp.istfa2004p0346.

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Abstract For years there has been a discrepancy between the importance of complex doping implantation schemes for advanced technology device performance and the ability to accurately measure the carrier concentrations with the gap widening at each technology node. With scanning spreading resistance Microscopy (SSRM) a major step forward in terms of resolution and quantification was achieved especially since the emergence of full diamond tip manufacturability and improvements in sample preparation techniques. This article discusses the non-trivial prerequisites for this success and some examples from the failure analysis routine that show the promising capabilities of SSRM. The examples include technology monitoring and failure analysis in SOI transistors and vertical surrounded gate transistors, as well as failure analysis on yield and performance issues. SSRM has reached a development stage that allows its application as routine tool for 2D-carrier profiling.
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Hafer, C., J. Mabra, C. Mnich, M. Leslie, and A. Jordan. "Radiation Effects Characterization of a High Density SSRAM." In 2014 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with NSREC 2014). IEEE, 2014. http://dx.doi.org/10.1109/redw.2014.7004581.

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Domengès, B., T. Delaroque, K. Danilo, and A. Colder. "Comprehensive Nano-Structural Approach of SSRM Nanocontact on Silicon through TEM-STEM Study." In ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0132.

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Abstract Scanning Spreading Resistance Microscopy electro-mechanical nanocontacts are nowadays well understood and numerous influent parameters have been identified (Bias, load, surface state of the sample, radius of curvature of the tip). Despite several simulation and modelization possibilities, calibration curves are required to ensure reliable electrical characterizations. In this paper, we bring, through nano-structural studies (Scanning Electron Microscopy, Transmission Electron Microscopy) of surface state of both SSRM tips and doped silicon surface a new understanding of tip-sample interaction during SSRM measurements. As a result of load, a nanometric residual amorphous silicon layer was observed which thickness depends on applied force and might be due to as well the plastic transformation (Si to β-tin phase) as plough-effect residues resulting from the tip indentation into the sample. It appears thus in a failure analysis process to find the best compromise between stable electrical SSRM response and sample/tip surface degradation.
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McMurray, J. S., and C. M. Molella. "Identification of Root Cause Failure in Silicon on Insulator Body Contacted nFETs Using Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy." In ISTFA 2006. ASM International, 2006. http://dx.doi.org/10.31399/asm.cp.istfa2006p0102.

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Abstract Root cause for failure of 90 nm body contacted nFETs was identified using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). The failure mechanism was identified using both cross sectional imaging and imaging of the active silicon - buried oxide (BOX) interface in plan view. This is the first report of back-side plan view SCM and SSRM data for SOI devices. This unique plan view shows the root cause for the failure is an under doped link up region between the body contacts and the active channel of the device.
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Huang, Yafang, Yanzhao Liu, and Ping Luo. "SSRGM: Software Strong Reliability Growth Model Based on Failure Loss." In 2012 Fifth International Symposium on Parallel Architectures, Algorithms and Programming (PAAP). IEEE, 2012. http://dx.doi.org/10.1109/paap.2012.43.

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Reports on the topic "SSRDM"

1

Baca, Ana. Assessment of AFM - KPFM and SSRM for Measuring and Characterizing Materials Aging Processes. Office of Scientific and Technical Information (OSTI), November 2020. http://dx.doi.org/10.2172/1733233.

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