Academic literature on the topic 'Spin-dependent Hall effects'

A review of the phenomenology of the Spin Hall Effect and related phenomena originating from the coupling between spin and charge currents by spin-orbit interaction is presented. The physical origin of various effects in spin-dependent scattering is demonstrated. A previously unknown feature of spin transport, the swapping of spin currents, is discussed.

We study Hall and Nernst transports in monolayer MoS2based on Green’s function formalism. We have derived analytical results for spin and valley Hall conductivities in the zero temperature and spin and valley Nernst conductivities in the low temperature. We found that tuning of the band gap and spin-orbit splitting can drive system transition from spin Hall insulator (SHI) to valley Hall insulator (VHI). When the system is subjected to a temperature gradient, the spin and valley Nernst conductivities are dependent on Berry curvature.

The spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electric current drives a transverse spin current and causes a nonequilibrium spin accumulation near the sample boundary,1,2 the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric current3,4 or the reverse process, in which an electrical current generates a non-equilibrium spin-polarization,5–9 are all consequences of spin-orbit coupling. In order to observe a spin Hall effect a bias driven current is an essential prerequisite. Then spin separation is caused via spin-orbit coupling either by Mott scattering (extrinsic spin Hall effect) or by spin splitting of the band structure (intrinsic spin Hall effect). Recently an elementary effect causing spin separation which is fundamentally different from that of the spin Hall effect has been observed.10 In contrast to the spin Hall effect it does not require an electric current to flow: it is spin separation achieved by spin-dependent scattering of electrons in media with suitable symmetry. It is show that by free carrier (Drude) absorption of terahertz radiation spin separation is achieved in a wide range of temperatures from liquid helium temperature up to room temperature. Moreover the experimental results demonstrate that simple electron gas heating by any means is already sufficient to yield spin separation due to spin-dependent energy relaxation processes of non-equilibrium carriers. In order to demonstrate the existence of the spin separation due to asymmetric scattering the pure spin current was converted into an electric current. It is achieved by application of a magnetic field which polarizes spins. This is analogues to spin-dependent scattering in transport experiments: spin-dependent scattering in an unpolarized electron gas causes the extrinsic spin Hall effect, whereas in a spin-polarized electron gas a charge current, the anomalous Hall effect, can be observed. As both magnetic fields and gyrotropic mechanisms were used authors introduced the notation "magneto-gyrotropic photogalvanic effects" for this class of phenomena. The effect is observed in GaAs and InAs low dimensional structures at free-carrier absorption of terahertz radiation in a wide range of temperatures from liquid helium temperature up to room temperature. The results are well described by the phenomenological description based on the symmetry. Experimental and theoretical analysis evidences unumbiguously that the observed photocurrents are spin-dependent. Microscopic theory of this effect based on asymmetry of photoexcitation and relaxation processes are developed being in a good agreement with experimental data. Note from Publisher: This article contains the abstract only.

Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013- 7.7·1015cm-3concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

Abstract Topological photonics is an emerging field in photonics in which various topological and geometrical ideas are used to manipulate and control the behavior of light photons. The interplay between topological matter and the spin degree of freedom of photons provides new opportunities for achieving spin-based photonics applications. In this paper, the photonic spin Hall effect (PSHE) of reflected light from the surface of the topological silicene quantum systems subjected to external electric and radiation fields in the terahertz regime is theoretically investigated. By tuning the external electric and the applied laser fields, we can drive the silicenic system through different topological quantum phase transitions. We demonstrate that the in-plane and transverse spatial spin dependent shifts exhibit extreme values near Brewster’s angles and away from the optical transition frequencies. We reveal that the photonic spin Hall shifts are sensitive to the spin and valley indices as well as to the number of closed gaps. We believe that the spin and valley-resolved PSHE will greatly impact the research in spinoptics, spintronics, and valleytronics.

AbstractThe negative- U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure.

Abstract Measurements of frequency dependent ferromagnetic resonance and spin pumping driven dc voltage (V dc) are reported for amorphous films of Fe78Ga13B9 alloy to address the phenomenon of self-induced inverse spin Hall effect (ISHE) in plain films of metallic ferromagnets (FMs). The V dc signal, which is anti-symmetric on field reversal, comprises of symmetric and asymmetric Lorentzians centered around the resonance field. Dominant role of thin film size effects is seen in setting the magnitude of static magnetization, V dc and dynamics of magnetization precession in thinner films (⩽8 nm). The film thickness dependence of magnetization parameters indicates the presence of a magnetically disordered region at the film—substrate interface, which may promote preferential flow of spins generated by the precessing magnetization towards the substrate. However, the V dc signal also draws contributions from rectification effects of a ≈0.4% anisotropic magnetoresistance and a large (≈54 nΩ m) anomalous Hall resistivity (AHR) of these films which ride over the effect of spin–orbit coupling driven spin-to-charge conversion near the film—substrate interface. We have addressed these data in the framework of the existing theories of electrodynamics of a ferromagnetic film subjected to radio-frequency field in a coplanar waveguide geometry. Our estimation of the self-induced ISHE for the sample with 54 nΩ m AHR shows that it may contribute significantly (≈90%) to the measured symmetric voltage. This study is expected to be very useful for fully understanding the spin pumping induced dc voltages in metallic FMs with disordered interfaces and large anomalous Hall effect.

The generation of perpendicular effective magnetic field or perpendicular spins ( σz) is central for the development of energy-efficient, scalable, and external-magnetic-field-free spintronic memory and computing technologies. Here, we report the first identification and the profound impacts of a significant effective perpendicular magnetic field that can arise from asymmetric current spreading within magnetic microstrips and Hall bars. This effective perpendicular magnetic field can exhibit all the three characteristics that have been widely assumed in the literature to “signify” the presence of a flow of σz, i.e., external-magnetic-field-free current switching of uniform perpendicular magnetization, a sin 2 φ-dependent contribution in spin-torque ferromagnetic resonance signal of in-plane magnetization ( φ is the angle of the external magnetic field with respect to the current), and a φ-independent but field-dependent contribution in the second harmonic Hall voltage of in-plane magnetization. This finding suggests that it is critical to include current spreading effects in the analyses of various spin polarizations and spin–orbit torques in the magnetic heterostructure. Technologically, our results provide a perpendicular effective magnetic field induced by asymmetric current spreading as a novel, universally accessible mechanism for efficient, scalable, and external-magnetic-field-free magnetization switching in memory and computing technologies.

Abstract We present a magnetic tunnel junction (MTJ) based implementation of the spike time-dependent (STDP) learning for pattern recognition applications. The proposed hybrid scheme utilizes the spin–orbit torque (SOT) driven neuromorphic device-circuit co-design to demonstrate the Hebbian learning algorithm. The circuit implementation involves the (MTJ) device structure, with the domain wall motion in the free layer, acting as an artificial synapse. The post-spiking neuron behaviour is implemented using a low barrier MTJ. In both synapse and neuron, the switching is driven by the SOTs generated by the spin Hall effect in the heavy metal. A coupled model for the spin transport and switching characteristics in both devices is developed by adopting a modular approach to spintronics. The thermal effects in the synapse and neuron result in a stochastic but tuneable domain wall motion in the synapse and a superparamagnetic behaviour of in neuron MTJ. Using the device model, we study the dimensional parameter dependence of the switching delay and current to optimize the device dimensions. The optimized parameters corresponding to synapse and neuron are considered for the implementation of the Hebbian learning algorithm. Furthermore, cross-point architecture and STDP-based weight modulation scheme is used to demonstrate the pattern recognition capabilities by the proposed neuromorphic circuit.

Nous avons étudié par des méthodes numériques et en théorie k.p avancée les propriétés tunnel d’électrons et de trous dans des systèmes modèles et hétérostructures composés de semi-conducteurs impliquant des interactions spin-orbite de volume. Nous démontrons que le couplage entre les interactions spin-orbite et d’échange à l’interface de jonctions tunnel résulte en un fort contraste de transmission de porteurs selon le signe de la composante de leur vecteur d’onde dans le plan de la jonction. Cet effet conduit à un effet tunnel anormal d’interface que nous appelons « Effet Hall Tunnel Anormal » (ATHE). De façon similaire, des processus tunnel non-conventionnels se manifestant sur des isolants topologiques ont été prédits par d’autres auteurs. Alors que l’ensemble de ces effets Hall anormaux sont liés aux interactions spin-orbite, les effets tunnel anormaux diffèrent des effets Hall tunnel, des effets Hall et des effets Hall de spin par la forte amplitude prédite ainsi que par des phénomènes de chiralité. Ces propriétés possèdent un lien nontrivial avec la symétrie du système. L’ensemble de ces résultats démontre l’existence d’une nouvelle classe d’effets tunnel qui devaient être étudiés expérimentalement dans un futur proche. En ce qui concerne la bande de valence, nous démontrons, en utilisant un Hamiltonien 14x14 prolongeant un modèle 2x2, que le calcul décrivant l’ATHE repose sur un traitement subtil des états dits « spurious » (états non-physiques) et nous donnons quelques éléments d’amélioration et de compréhension. Dans ce mémoire de thèse, nous développons deux méthodes numériques pour résoudre le problème des états spurious en développant en parallèle des méthodes k.p respectivement à 14 bandes et 30 bandes afin de décrire des matériaux semiconducteurs à gap indirect. Les calculs menés dans la bande de valence d’hétérostructures semiconductrice incluant interfaces et barrières tunnel (approches 6x6 et 14x14) sans centre de symétrie d’inversion mettent en évidence des propriétés d’asymétrie équivalente à celles obtenues dans la bande de conduction. De tels effets sont interprétés, dans le cadre de calculs de perturbation en transport basés sur des techniques de fonctions de Green, par des effets chiraux orbitaux lors du branchement tunnel des fonctions évanescentes dans la barrière
We report on theoretical, analytical and computational investigations and k.p calculations of electron and hole tunneling, in model systems and heterostructures composed of exchange-split III-V semiconductors involving spin-orbit interaction (SOI). We show that the interplay of SOI and exchange interactions at interfaces and tunnel junctions results in a large difference of transmission for carriers, depending on the sign of their incident in-plane wave vector (k//): this leads to interfacial skew-tunneling effects that we refer to as Anomalous Tunnel Hall Effect (ATHE). In a 2x2 exchange-split band model, the transmission asymmetry (A) between incidence angles related to +k// and -k// wave vector components, is shown to be maximal at peculiar points of the Brillouin zone corresponding to a totally quenched transmission (A = 100%). More generally, we demonstrate the universal character of the transmission asymmetry A vs. in-plane wavevector component, for given reduced kinetic energy and exchange parameter, A being universally scaled by a unique function, independent of the spin-orbit strength and of the material parameters. Similarly, striking tunneling phenomena arising in topological insulators have just been predicted. While they all are related to the spin-orbit directional anisotropy, ATHE differs from the tunneling Hall effect, spontaneous anomalous, and spin Hall effects, or spin-galvanic effect, previously reported for electron transport, by its giant forward asymmetry and chiral nature. These features have non-trivial connection with the symmetry properties of the system. All these results show that a new class of tunneling phenomena can now be investigated and experimentally probed.When valence bands are involved, we show (using 14x14 Hamiltonian and within a 2x2 toy model) that ATHE accurate calculations rely on a subtle treatment of the spurious (unphysical) states and we give an insight into the topology of the complex band structure. We introduce two numerical methods to remove spurious states and successfully, include them in 30-band codes able to describe indirect bandgap group-IV semiconductors. Calculations performed in the valence bands of model heterostructures including tunnel barriers, in both 6x6 and 14x14 k.p Hamiltonians without inversion asymmetry, more astonishingly highlight the same trends in the transmission asymmetry which appears to be related to the difference of orbital chirality and to the related branching (overlap) of the corresponding evanescent wave functions responsible for the tunneling current. Besides, we built an analytical model and developed scattering perturbative techniques based on Green’s function method to analytically deal with electrons and holes and to compare these results with numerical calculations. The agreement between the different approaches is very good. In the case of holes, the asymmetry appears to be robust and persists even when a single electrode is magnetic

博士
國立臺灣大學
物理研究所
97
Spin-dependent quantum phenomena, the spin-Hall effect and spin-pumping, are investigated with employing the Landauer-Keldysh formalism, the Keldysh-nonequilibrium-Green-function technique applied to the Landauer setup. As one advantage from this method, physical quantities such as, charge and spin occupations, charge and spin currents, and conductance can all be obtained in a unified way. Analysis will be given mainly on these quantities. The spin-Hall effect in the two-dimensional sample made of semiconductor heterostructure with Rashba and Dresselhaus spin-orbit interaction (coupling) is studied. The spin-precession, which originates from these two SO couplings and plays an important role in the spin Hall effect, can be elucidated by the spin propagator constructed via the non-Abelian (non-commutable) spin-orbit gauge. Applications based on the spin-precession are proposed by considering a square ring etched from the two-dimensional system mentioned above. The spin-Hall effect in the presence of magnetic field, non-magnetic defect, and magnetic impurity (-ies) are also discussed. In particular, the exchange between two magnetic impurities is non-collinear, reflecting the existence of the spin precession of mediating electrons. Furthermore, the quantum spin Hall effect in graphene is also examined. We point out that the size of the sample is relevant to the quantization of the spin Hall conductance; the size of graphene has to be large enough to get the quantized conductance. On the issue of spin-pumping, we consider one-, two-, and three-dimensional systems. In the one-dimensional tight-binding model, the analytical form of the pumped spin currents yield fundamental understanding of the pumping; a plain and insightful physical picture is established to explain the pumping mechanism. In the two-dimensional topological-insulator graphene, a setup based on the interplay of the quantum spin Hall effect and spin pumping is proposed. This setup offers an experimental proof via electric means for the existence of the topological-insulator phase. Distinguishable from most of the present theoretical results, in the three-dimensional case, our calculations yield the same order of magnitude of the converted charge voltage measured in a magnetic tunneling junction with spin-pumping.

The impact of the spin degree of freedom on the transport properties of electrons traveling through magnetic materials has been known since the pioneer work of Mott [1]. Since then it has been demonstrated that the spin angular momentum plays a key role in the scattering process of electrons in magnetic multilayers. This role has been emphasized by the discovery of the Giant Magnetoresistance in 1988 by Fert and Grunberg [2, 3]. Among the numerous applications and effects that emerged in mesoscopic devices two mechanisms have attracted our attention during the course of this thesis: the spin transfer torque and the spin Hall effects. The former consists in the transfer of the spin angular momentum from itinerant carriers to local magnetic moments [4]. This mechanism results in the current-driven magnetization switching and excitations, which has potential application in terms of magnetic data storage and non-volatile memories. The latter, spin Hall effect, is considered as well to be one of the most fascinating mechanisms in condensed matter physics due to its ability of generating non-equilibrium spin currents without the need for any magnetic materials. In fact the spin Hall effect relies only on the presence of the spin-orbit interaction in order to create an imbalance between the majority and minority spins. The objective of this thesis is to investigate the impact of disorder on spin dependent transport phenomena. To do so, we identified three classes of systems on which such disorder may have a dramatic influence: (i) antiferromagnetic materials, (ii) impurity-driven spin-orbit coupled systems and (iii) two dimensional semiconducting electron gases with Rashba spin-orbit coupling. Antiferromagnetic materials - We showed that in antiferromagnetic spin-valves, spin transfer torque is highly sensitive to disorder, which prevents its experimental observation. To solve this issue, we proposed to use either a tunnel barrier as a spacer or a local spin torque using spin-orbit coupling. In both cases, we demonstrated that the torque is much more robust against impurities, which opens appealing venues for its experimental observation. Extrinsic spin-orbit coupled systems - In disordered metals accommodating spin orbit coupled impurities, it is well-known that spin Hall effect emerges due to spin dependent Mott scattering. Following a recent prediction, we showed that another effect coexists: the spin swapping effect, that converts an incoming spin current into another spin current by "swapping" the momentum and spin directions. We showed that this effect can generate peculiar spin torque in ultrathin magnetic bilayers. Semiconductors spintronics - This last field of research has attracted a massive amount of hope in the past fifteen years, due to the ability of coherently manipulating the spin degree of freedom through interfacial, so-called Rashba, spin-orbit coupling. However, numerical simulations failed reproducing experimental results due to coherent interferences between the very large number of modes present in the system. We showed that spin-independent disorder can actually wash out these interferences and promote the conservation of the spin signal. In the course of this PhD, we showed that while disorder-induced dephasing is usually detrimental to the transmission of spin information, in selected situation, it can actually promote spin transport mechanisms and participate to the enhancement of the desired spintronics phenomenon.

This chapter discusses the Spin-injection Hall effect (SiHE), another member of the spin-dependent Hall effects that is closely related to the anomalous Hall effect (AHE), the spin Hall effect (SHE), and the inverse spin Hall effect (iSHE). The microscopic origins responsible for the appearance of spin-dependent Hall effects are due to the spin-orbit (SO) coupling-related asymmetrical deflections of spin carriers. Depending on the relative strength of the SO coupling compared to the energy-level broadening of the quasi-particle states due to disorder scattering, scattering-related extrinsic mechanisms or intrinsic band structure-related deflection dominate the spin-dependent Hall response. Both the iSHE and the SiHE require spin injection into a nonmagnetic system. Similar to the AHE, a spin-polarized charge current flows in the case of the SiHE and the SO coupling generates the spin-dependent Hall signal.

This chapter begins with a definition of spin Hall effects, which are a group of phenomena that result from spin–orbit interaction. These phenomena link orbital motion to spin direction and act as a spin-dependent magnetic field. In its simplest form, an electrical current gives rise to a transverse spin current that induces spin accumulation at the boundaries of the sample, the direction of the spins being opposite at opposing boundaries. It can be intuitively understood by analogy with the Magnus effect, where a spinning ball in a fluid deviates from its straight path in a direction that depends on the sense of rotation. spin Hall effects can be associated with a variety of spin-orbit mechanisms, which can have intrinsic or extrinsic origin, and depend on the sample geometry, impurity band structure, and carrier density but do not require a magnetic field or any kind of magnetic order to occur.

This chapter explains how the exchange splitting between up- and down-spin bands in ferromagnets unexceptionally generates spin-polarized electronic states at the Fermi energy. The quantity of spin polarization P in ferromagnets is one of the important parameters for application in spintronics, since a ferromagnet having a higher P is able to generate larger various spin-dependent effects such as the magnetoresistance effect, spin transfer torque, spin accumulation, and so on. However, the spin polarizations of general 3d transition metals or alloys generally limit the size of spin-dependent effects. Thus,“‘half-metals” attract much interest as an ideal source of spin current and spin-dependent scattering because they possess perfectly spin-polarized conduction electrons due to the energy band gap in either the up- or down-spin channel at the Fermi level.

This article focuses on spintronics with metallic nanowires. It begins with a review of the highlights of spintronics research, paying attention to the very important developments accomplished with tunnel junctions. It then considers the effect of current on magnetization before discussing spin diffusion and especially spin-dependent conductivities, spin-diffusion lengths, and spin accumulation. It also examines models for spin-polarized currents acting on magnetization, current-induced magnetization switching, and current-driven magnetic excitations. It concludes with an overview of resonant-current excitations, with emphasis on spin-valves and tunnel junctions as well as resonant excitation of spin-waves, domain walls and vortices. In addition, the article reflects on the future of spintronics, citing in particular the potential of the spin Hall effect as the method of generating spin accumulation, free of charge accumulation.

A sensor architecture based on resonant evanescent coupling between a side polished single-mode (cut-off 1200 nm) fibre and a high index overlay waveguide is reported. A polarisation dependent channel dropping filter with an inverse response of a Fabry-Perot is exhibited by the structure. It is found that the resonance position (with respect to wavelength) is dependent on the refractive index of the superstate. This effect is utilised to demonstrate highly sensitive refractometry in an pseudo-continuous all fibre form. The device is constructed by spin coating a thin film (approximately 2 μm) of polymer (refractive index 1.6) onto a polished fibre half coupler, and curing this to form an asymmetric directional coupler. A thin protective coating of dielectric is then deposited on top of the polymeric waveguide. Various index matching oils are then placed on top of the structure (Fig. 1) and the effect on resonant wavelength position noted.