Journal articles: 'Solar cells, Thin film, Tin sulfide, SnS'

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Nair, P. K., A. R. Garcia-Angelmo, and M. T. S. Nair. "Cubic and orthorhombic SnS thin-film absorbers for tin sulfide solar cells." physica status solidi (a) 213, no. 1 (October 26, 2015): 170–77. http://dx.doi.org/10.1002/pssa.201532426.

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Mukherjee, A., and P. Mitra. "Structural and optical characteristics of SnS thin film prepared by SILAR." Materials Science-Poland 33, no. 4 (December 1, 2015): 847–51. http://dx.doi.org/10.1515/msp-2015-0118.

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AbstractSnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR) method. The films were prepared using tin chloride as tin (Sn) source and ammonium sulfide as sulphur (S) source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important material for thin film solar cells. The surface morphology showed a smooth, homogenous film over the substrate. Characteristic stretching vibration mode of SnS was observed in the absorption band of FT-IR spectrum. The electrical activation energy was about 0.306 eV.

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Sajadnia, Mohsen, Sajjad Dehghani, Zahra Noraeepoor, and Mohammad Hossein Sheikhi. "Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells." World Journal of Engineering 17, no. 4 (June 6, 2020): 527–33. http://dx.doi.org/10.1108/wje-02-2020-0068.

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Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.

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Hegde, S. S., and K. Ramesh. "Advances in low-cost and nontoxic materials based solar cell devices." Journal of Physics: Conference Series 2070, no. 1 (November 1, 2021): 012043. http://dx.doi.org/10.1088/1742-6596/2070/1/012043.

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Abstract Photovoltaics (PV) have become increasingly popular and reached as the third-largest renewable energy source. Thin-film solar cells made from earth-abundant, inexpensive and environmentally friendly materials are needed to replace the current PV technologies whose large-scale applications are limited by material and/or resource constraints. Near optimum direct optical bandgap of 1.3 eV, high absorption coefficient (>104 cm−1), less toxic, and abundant raw resources along with considerable scalability have made tin sulfide (SnS) as a strategic choice for next-generation PVs. In this review, limitations of leading commercial PV technologies and the status of a few alternate low-cost PV materials are outlined. Recent literature on crucial physical properties of SnS thin-films and the present status of SnS thin-film-based solar cells are discussed. Deficiency and adequacy of some of the key properties of SnS including carrier mobility (μ), minority carrier lifetime (τ), and absorption coefficient (α) are discussed in comparison of existing commercial solar cell materials. Future research trends on SnS based solar cells to enhance their conversion efficiencies towards the theoretical maximum of 24% from present ~5% and its prospectus as next-generation solar cell is also discussed.

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Patel, T. H. "Effect of Temperature on Structural and Optical Properties of Chemically Deposited Tin Sulfide Thin Films Suitable for Photovoltaic Structures." Advanced Materials Research 665 (February 2013): 93–100. http://dx.doi.org/10.4028/www.scientific.net/amr.665.93.

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SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy band gap phases e.g. SnS2, Sn2S3and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. Thin films of tin sulphide have been deposited using CBD at three different bath temperatures (27, 35 and 45 °C) onto microscope glass substrates. The X ray diffraction (XRD) analysis of the deposited films reveled that all films has orthorhombic SnS phase as dominant one with preferred orientations along (111) direction. The temperature influence on the crystalline nature and the presence of other phases of SnS has been observed. The average grain size in the films determined from Scherers formula as well as from Williamson-Hall-plot method agrees well with each other. Energy dispersive X-ray (EDAX) analysis used to determine the film composition suggested that films are almost stoichiometric. The scanning electron microscopy (SEM) reveals that deposited films are pinhole free and consists of uniformly distributed spherical grains. The optical analysis in the 200-1200 nm range suggests that direct allowed transitions are dominant in the absorption process in the films with variation in the band gap (~1.79 to ~2.05 eV) due to variation in deposition temperature.

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Khalkar, Arun, Kwang-Soo Lim, Seong-Man Yu, Dong-Wook Shin, Tae-Sik Oh, and Ji-Beom Yoo. "Effects of Sulfurization Pressure on the Conversion Efficiency of Cosputtered Cu2ZnSnS4Thin Film Solar Cells." International Journal of Photoenergy 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/750846.

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We report herein Cu2ZnSnS4(CZTS) thin film solar cells with 6.75% conversion efficiency, without an antireflection coating. The CZTS precursors have been prepared by cosputtering using three different targets on Mo-coated substrates: copper (Cu), tin sulfide (SnS), and zinc (Zn). The postsulfurization was carried out at different pressures in a H2S/N2environment at 550°C for one hour. A comparative study on the performances of solar cells with CZTS absorber layers prepared at different sulfurization pressures was carried out. The device efficiency of 1.67% using CZTS absorber and low pressure sulfurization is drastically improved, to an efficiency of 6.75% with atmospheric pressure sulfurization.

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Ballipinar, Faruk, and Alok C. Rastogi. "Single-step organic vapor phase sulfurization synthesis of p-SnS photo-absorber for graded band-gap thin film heterojunction solar cells with n-ZnO1-x Sx." MRS Advances 1, no. 41 (2016): 2801–6. http://dx.doi.org/10.1557/adv.2016.325.

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ABSTRACTTin sulfide has emerged as a promising solar absorber among the IV-VI binary compound which is earth-abundant and non-toxic. This research provides a new perspective on synthesis of photosensitive monophasic SnS films by organic chemical vapor sulfurization of Sn thin film. S-radicals formed by closed space pyrolysis of di-tert-butyl disulfide (TBDS) diffusively react with Sn to produce SnS film. SnS being an amphoteric semiconductor converts to n-type by trivalent Sb and Bi dopants. The organic vapor sulfurization method described in this research facilitates single-step synthesis of buried junction structures and thus SnS solar cells in a p-n homojunction or p-i-n structures. In this work, vacuum evaporated Sn thin film with a thickness of 100 nm, was converted to SnS by sulfurization under 100 sccm flow of TBDS vapor preheated to 100°C and structural phase evolution and film growth kinetics were investigated for sulfurization at 200°C, 300°C and 400°C for a periods 90 min. X-ray diffraction studies establish single phase highly crystalline film in orthorhombic crystal structure forms at 200°C. Raman scattering results confirm SnS formation with the identification of 2Ag, 2B2g optical phonons modes. Optical bandgap studies confirm a low energy 1.1-1.4 eV indirect bandgap and a strong absorption threshold between 1.4 to 1.6 eV direct band gap depending on the sulfurization conditions correlating with intrinsic defects and phase structure of the film.

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Ballipinar, Faruk, and A. C. Rastogi. "Tin sulfide (SnS) semiconductor photo-absorber thin films for solar cells by vapor phase sulfurization of Sn metallic layers using organic sulfur source." Journal of Alloys and Compounds 728 (December 2017): 179–88. http://dx.doi.org/10.1016/j.jallcom.2017.08.295.

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Ballipinar, Faruk. "Tin sulfide (SnS) thin-film solar cells deposited by organic chemical vapor sulfurization based on CdS and high transmittance Cd(S,O) n-type layers with the superstrate device structure." MRS Communications 10, no. 4 (October 16, 2020): 660–66. http://dx.doi.org/10.1557/mrc.2020.78.

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Reddy, N. Koteeswara, M. Devika, K. R. Gunasekhar, and E. S. R. Gopal. "Fabrication of Photovoltaic Devices Using ZnO Nanostructures and SnS Thin Films." Nano 11, no. 07 (July 2016): 1650077. http://dx.doi.org/10.1142/s1793292016500776.

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The development of nontoxic and cost-effective solar cell devices is one of the challenging tasks even now. With this objective, solar cell devices using tin mono sulfide (SnS) thin films and zinc oxide (ZnO) nanostructures with a superstrate configuration of ITO/ZnO film/ZnO nanorods/SnS film/Zn have been fabricated and their photovoltaic properties have been investigated. Vertically aligned ZnO nanostructures were grown on indium doped tin oxide substrate by chemical solution method and then, SnS thin films were deposited by thermal evaporation method. A typical solar cell device exhibited significant light conversion efficiency with an open circuit voltage and short circuit current of 350[Formula: see text]mV and 5.14[Formula: see text]mA, respectively.

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Omprakash Anand, C. N., P. Thirunavukkarasu, A. Balamurugan, and S. Surendhiran. "Study on preparation and characterisation of pure and lithium incorporated SnS thin films for solar cell applications." Chalcogenide Letters 19, no. 9 (September 25, 2022): 651–62. http://dx.doi.org/10.15251/cl.2022.199.651.

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A ternary transition metal sulfide was synthesized and characterized by the sonochemical approach in this study, namely a Li (Li) and tin sulfide (SnS) thin film incorporating lithium (Li). Lithium incorporated SnS thin films (Li-SnS) were synthesized by equal molar ratios used in the synthesis approach. In these prepared thin films, the crystallite size averaged 5 nm and the thin films were of good crystalline nature. Nanoparticles in the thin film samples have a uniform sphere shape, with clusters forming in a few places, as seen by FE-SEM images. The presence of Li, Sn and S was confirmed through XRF spectral analysis. From the fingerprint region of the FTIR spectra, the presence of Ni, Li, Sn and sulphur was confirmed and no other impurities were detected. The UV absorption analysis was highly indicating the enhanced photon absorption behaviour of the prepared thin film samples due to the incorporation of Li with SnS samples. The efficiencies of the solar cell fabricated with SnS, Li-SnS, were found to be 6.21 and 7.92 %. From the results it is concluded that Li-SnS thin film samples can be a potential candidate for use as an electrode in solar cell applications

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Patel, Malkeshkumar, Arvind Chavda, Indrajit Mukhopadhyay, Joondong Kim, and Abhijit Ray. "Nanostructured SnS with inherent anisotropic optical properties for high photoactivity." Nanoscale 8, no. 4 (2016): 2293–303. http://dx.doi.org/10.1039/c5nr06731f.

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Tin(ii) sulfide is a fascinating solar energy material due to its anisotropic material properties. In this manuscript, we report on exploiting the 2D structure modulated optical properties of nanocrystalline SnS thin film synthesis by chemical spray pyrolysis using ambient transport in the harvesting of solar energy.

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Ocampo-Ortega, Carlos, Ines Riech, Arturo Abelenda, Ricardo Mis-Fernández, Patricia Rodríguez-Fragoso, and Julio Mendoza-Alvarez. "Chemical Bath Deposited Orthorhombic SnS Films for Solar Cell Applications." Coatings 12, no. 2 (February 21, 2022): 283. http://dx.doi.org/10.3390/coatings12020283.

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Tin sulfide (SnS) thin films were deposited by the chemical bath deposition technique. The used procedure allows us to obtain orthorhombic SnS in 3.5 h and achieve thicknesses of 390 nm. We study the influence of deposition times, percentage of Sn precursor, and post-annealing on the structural and optical properties. The X-ray diffraction measurements of SnS films prepared at a deposition time of 3 h showed orthorhombic structure with characteristic peaks of SnS2. However, increasing the deposition time and the Sn precursor, the orthorhombic SnS phase in these samples becomes predominant. Thin-film morphologies and thicknesses were identified by scanning electron microscopy (SEM). An increase in bandgap from 1.41 eV to 1.56 eV was observed by increasing Sn precursor. The optical properties remain constant after air annealing of 285 °C. Low-temperature photoluminescence spectra show emission bands at 2.5 eV attributed to the presence of SO2. Other deep level transitions were observed at about 0.9 eV, probably due to oxygen.

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Lee, Dajeong, Jae Yu Cho, Hee-Sun Yun, Doh-Kwon Lee, Taehoon Kim, Kijoon Bang, Yun Seog Lee, Ho-Young Kim, and Jaeyeong Heo. "Vapor transport deposited tin monosulfide for thin-film solar cells: effect of deposition temperature and duration." Journal of Materials Chemistry A 7, no. 12 (2019): 7186–93. http://dx.doi.org/10.1039/c8ta09820d.

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Shin, Donghyeok, SangWoon Lee, Dong Ryeol Kim, Joo Hyung Park, Yangdo Kim, Woo-Jin Choi, Chang Sik Son, Young Guk Son, and Donghyun Hwang. "Effect of RF Power on the Properties of Sputtered-CuS Thin Films for Photovoltaic Applications." Energies 13, no. 3 (February 5, 2020): 688. http://dx.doi.org/10.3390/en13030688.

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Copper sulfide (CuS) thin films were deposited on a glass substrate at room temperature using the radio-frequency (RF) magnetron-sputtering method at RF powers in the range of 40–100 W, and the structural and optical properties of the CuS thin film were investigated. The CuS thin films fabricated at varying deposition powers all exhibited hexagonal crystalline structures and preferred growth orientation of the (110) plane. Raman spectra revealed a primary sharp and intense peak at the 474 cm−1 frequency, and a relatively wide peak was found at 265 cm−1 frequency. In the CuS thin film deposited at an RF power of 40 W, relatively small dense particles with small void spacing formed a smooth thin-film surface. As the power increased, it was observed that grain size and grain-boundary spacing increased in order. The binding energy peaks of Cu 2p3/2 and Cu 2p1/2 were observed at 932.1 and 952.0 eV, respectively. Regardless of deposition power, the difference in the Cu2+ state binding energies for all the CuS thin films was equivalent at 19.9 eV. We observed the binding energy peaks of S 2p3/2 and S 2p1/2 corresponding to the S2− state at 162.2 and 163.2 eV, respectively. The transmittance and band-gap energy in the visible spectral range showed decreasing trends as deposition power increased. For the CuS/tin sulfide (SnS) absorber-layer-based solar cell (glass/Mo/absorber(CuS/SnS)/cadmium sulfide (CdS)/intrinsic zinc oxide (i-ZnO)/indium tin oxide (ITO)/aluminum (Al)) with a stacked structure of SnS thin films on top of the CuS layer deposited at 100 W RF power, an open-circuit voltage (Voc) of 115 mA, short circuit current density (Jsc) of 9.81 mA/cm2, fill factor (FF) of 35%, and highest power conversion efficiency (PCE) of 0.39% were recorded.

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Steinmann, Vera, Riley E. Brandt, Rupak Chakraborty, R. Jaramillo, Matthew Young, Benjamin K. Ofori-Okai, Chuanxi Yang, et al. "The impact of sodium contamination in tin sulfide thin-film solar cells." APL Materials 4, no. 2 (February 2016): 026103. http://dx.doi.org/10.1063/1.4941713.

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Vermang, Bart, Aniket Mule, Nikhil Gampa, Sylvester Sahayaraj, Samaneh Ranjbar, Guy Brammertz, Marc Meuris, and Jef Poortmans. "Progress in Cleaning and Wet Processing for Kesterite Thin Film Solar Cells." Solid State Phenomena 255 (September 2016): 348–53. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.348.

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Copper indium gallium selenide/sulfide (CIGS) and copper zinc tin selenide/sulfide (CZTS) are two thin film photovoltaic materials with many similar properties. Therefore, three new processing steps – which are well-known to be beneficial for CIGS solar cell processing – are developed, optimized and implemented in CZTS solar cells. For all these novel processing steps an increase in minority carrier lifetime and cell conversion efficiency is measured, as compared to standard CZTS processing. The scientific explanation of these effects is very similar to its CIGS equivalent: the incorporation of alkali metals, ammonium sulfide surface cleaning, and Al2O3 surface passivation leads to electrical enhancement of the CZTS bulk, front surface and reduced front interface recombination, respectively.

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Norton, Kane J., Firoz Alam, and David J. Lewis. "A Review of the Synthesis, Properties, and Applications of Bulk and Two-Dimensional Tin (II) Sulfide (SnS)." Applied Sciences 11, no. 5 (February 26, 2021): 2062. http://dx.doi.org/10.3390/app11052062.

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Tin(II) sulfide (SnS) is an attractive semiconductor for solar energy conversion in thin film devices due to its bandgap of around 1.3 eV in its orthorhombic polymorph, and a band gap energy of 1.5–1.7 eV for the cubic polymorph—both of which are commensurate with efficient light harvesting, combined with a high absorption coefficient (10−4 cm−1) across the NIR–visible region of the electromagnetic spectrum, leading to theoretical power conversion efficiencies >30%. The high natural abundance and a relative lack of toxicity of its constituent elements means that such devices could potentially be inexpensive, sustainable, and accessible to most nations. SnS exists in its orthorhombic form as a layer structure similar to black phosphorus; therefore, the bandgap energy can be tuned by thinning the material to nanoscale dimensions. These and other properties enable SnS applications in optoelectronic devices (photovoltaics, photodetectors), lithium- and sodium-ion batteries, and sensors among others with a significant potential for a variety of future applications. The synthetic routes, structural, optical and electronic properties as well as their applications (in particular photonic applications and energy storage) of bulk and 2D tin(II) sulfide are reviewed herein.

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Chernomordik, B. D., A. E. Béland, N. D. Trejo, A. A. Gunawan, D. D. Deng, K. A. Mkhoyan, and E. S. Aydil. "Rapid facile synthesis of Cu2ZnSnS4 nanocrystals." J. Mater. Chem. A 2, no. 27 (2014): 10389–95. http://dx.doi.org/10.1039/c4ta01658k.

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A method for rapid synthesis of 2–40 nm diameter nanocrystal dispersions of the emerging sustainable thin-film solar absorber copper zinc tin sulfide is reported: the average crystals size is controlled by varying the synthesis temperature between 150 °C and 340 °C. Films cast from larger nanocrystals, are crack-free and suitable for making thin film solar cells.

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Ghorpade, Uma V., Mahesh P. Suryawanshi, Seung Wook Shin, Chang Woo Hong, Inyoung Kim, Jong H. Moon, Jae Ho Yun, Jin Hyeok Kim, and Sanjay S. Kolekar. "Wurtzite CZTS nanocrystals and phase evolution to kesterite thin film for solar energy harvesting." Physical Chemistry Chemical Physics 17, no. 30 (2015): 19777–88. http://dx.doi.org/10.1039/c5cp02007g.

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A quaternary indium- and gallium-free kesterite (KS)-based compound, copper zinc tin sulfide (Cu₂ZnSnS₄, CZTS), has received significant attention for its potential applications in low cost and sustainable solar cells.

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Islam, Md Fakhrul, Nadhrah Md Yatim, and Mohd Azman Hashim@Ismail. "A Review of CZTS Thin Film Solar Cell Technology." Journal of Advanced Research in Fluid Mechanics and Thermal Sciences 81, no. 1 (March 5, 2021): 73–87. http://dx.doi.org/10.37934/arfmts.81.1.7387.

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Copper Zinc Tin Sulfide (CZTS) solar cells have recently attracted attention as a potential low-cost earth abundant replacement for CIGS cells. This is due to their constituent’s Zn and Sn are non-toxic and earth-abundant compare to the elements of In and Ga in CIGS. Thus, aiming to analyse solar cells free from the environmental contaminant, CZTS is viewed as a potential candidate as the absorber for the next generation thin film solar cells. However, the conversion efficiency of CZTS based solar cells reported which is relatively low (highest conversion efficiency recorded is 12.5%) from the theoretical conversion efficiency limit of 32.2%. This is due to the low fill factor (FF), open circuit voltage (Voc) and current density (Jsc). In this study analysis of the different CZTS based solar cells and its synthesis methods will be reviewed. The effect of the compositional change and various structure in the CZTS, different buffer layers with their interfaces are thoroughly studied. The challenges regarding improving the conversion efficiency of CZTS solar cells and their future in the thin film solar cell application are discussed.

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Asif, Omar, and Alok C. Rastogi. "Tin Disulfide-Oxide (SnS2-xOx) as n-type Heterojunction Layer Processed by Chemical Bath Technique for Cd Free Fabrication of Compound Semiconductor Thin Film Solar Cells." MRS Advances 3, no. 56 (2018): 3301–6. http://dx.doi.org/10.1557/adv.2018.523.

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ABSTRACTThe chemical bath deposition of wide bandgap n-type SnS2 films and role of sulphur precursor in suppression of p-type SnS phase is described. The as-deposited films are highly polycrystalline in hexagonal crystal structure. Inclusion of oxygen in the film phase is shown by the x-ray photoelectron spectroscopy (XPS) and Raman scattering methods which suggests the CBD films are better described as tin disulfide-oxide (SnS2-xOx) x=0.1. A possible mechanism of film formation is presented. Optical analysis showed energy bandgap 2.76 eV for SnS2-xOx film which decreases to 2.62 eV with the inclusion of the secondary SnS phases.

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Dai, Pengcheng, Guan Zhang, Yuncheng Chen, Hechun Jiang, Zhenyu Feng, Zhaojun Lin, and Jinhua Zhan. "Porous copper zinc tin sulfide thin film as photocathode for double junction photoelectrochemical solar cells." Chemical Communications 48, no. 24 (2012): 3006. http://dx.doi.org/10.1039/c2cc17652a.

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Wang, Chonge, Boubacar Drame, Lucien Niare, and Fu Yuegang. "Optimization of the Shell Thickness of the ZnO/CdS Core-Shell Nanowire Arrays in a CZTS Absorber." International Journal of Optics 2022 (January 20, 2022): 1–12. http://dx.doi.org/10.1155/2022/5301790.

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Copper-zinc-tin-sulfide (CZTS) solar cells have now become a topic of interest in the solar power generation industry. These are used as an absorber in the zinc oxide (ZnO)/cadmium sulfide (CdS) core-shell nanowire arrays, in order to improve the performance of solar cells. The relationship between the average increase in absorption rates and CdS shell thickness (compared to the thin film) reveals that the optimum thickness with the maximum average absorption rate (39.95%) compared to thin film is 30 nm. The cells’ electrical and optical performance was significantly improved with the introduction of graphene between the ZnO and CdS layers. The shell thicknesses for a better performance of these nanowire solar cells were 30 and 40 nm, with almost the same open-circuit voltage, the similar short-circuit current density, and efficiency, which were 630 mV, 6.39 mA/cm2, and 16.8%, respectively. Furthermore, a minimum reflection of 40% was obtained with these same shell thicknesses.

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Khoshsirat, Nima, Fawad Ali, Vincent Tiing Tiong, Mojtaba Amjadipour, Hongxia Wang, Mahnaz Shafiei, and Nunzio Motta. "Optimization of Mo/Cr bilayer back contacts for thin-film solar cells." Beilstein Journal of Nanotechnology 9 (October 18, 2018): 2700–2707. http://dx.doi.org/10.3762/bjnano.9.252.

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Molybdenum (Mo) is the most commonly used material as back contact in thin-film solar cells. Adhesion of Mo film to soda–lime glass (SLG) substrate is crucial to the performance of solar cells. In this study, an optimized bilayer structure made of a thin layer of Mo on an ultra-thin chromium (Cr) adhesion layer is used as the back contact for a copper zinc tin sulfide (CZTS) thin-film solar cell on a SLG substrate. DC magnetron sputtering is used for deposition of Mo and Cr films. The conductivity of Mo/Cr bilayer films, their microstructure and surface morphology are studied at different deposition powers and working pressures. Good adhesion to the SLG substrate has been achieved by means of an ultra-thin Cr layer under the Mo layer. By optimizing the deposition conditions we achieved low surface roughness, high optical reflectance and low sheet resistivity while we could decrease the back contact thickness to 600 nm. That is two thirds to half of the thickness that is currently being used for bilayer and single layer back contact for thin-film solar cells. We demonstrate the excellent properties of Mo/Cr bilayer as back contact of a CZTS solar cell.

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J.Hamood, Farah, Qunoot M.hadi, Khalid Haneen Abass, and Musaab Khudhur Mohammed. "Influence of annealing temperature on structural and optical properties of SnS:Ag thin film for solar cell application." International Journal of Engineering & Technology 7, no. 4.36 (December 9, 2018): 296. http://dx.doi.org/10.14419/ijet.v7i4.36.23791.

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Thermal evaporation method have been used to prepared thin films from tin sulfide (SnS) doping with 20 nm particle size of silver (Ag) at room temperature, under pressure up to 1 × 10-7 mbar with rate of statement 0.5 nm. sec-1. The SnS:Ag thin films deposited on glass substrate at different annealing temperature (as-deposited, 423, 473, 573 and 623 K) for 2 hours. The effect of annealing treatment on the structural and optical properties has been studied. From X- ray diffraction (XRD) examination, predominant peak (111) appears at annealing temperature 623 K, also the others as (101) and (002). Scherer’s formula used to calculate the crystallite size that ranged from 3-7 nm. Using UV-Vis spectrophotometer to recording the transmittance spectra and then calculate the optical properties in the wavelength range 300-900 nm. The absorbance decreased with the increasing of annealing temperature, while the transmittance increased. The optical constants such as refractive index, extinction coefficient, real and imaginary parts of dielectric constant, and absorption coefficient decreased with the increasing of annealing temperature. The energy band gap increased from 2.1 eV for the as- deposited film to 3.3 eV for the film annealed at 623 K.

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ALI, M. Y., M. A. ABEDIN, M. S. HOSSAIN, and E. S. HOSSAIN. "OPTIMIZATION OF MONOCLINIC Cu2SnS3 (CTS) THIN FILM SOLAR CELL PERFORMANCES THROUGH NUMERICAL ANALYSIS." Chalcogenide Letters 17, no. 2 (February 2020): 85–98. http://dx.doi.org/10.15251/cl.2020.172.85.

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Investigation on the performance of monoclinic phase copper tin sulfide (CTS) based thin film solar cells has been carried out numerically by AMPS-1D simulation software. Based on proposed cell structure, the influence of carrier concentration and thickness of both absorber and buffer layers as well as the work function of back contact metal are studied to enhance the output performance of monoclinic phase CTS thin film solar cell. The effect of operating temperature is also tested for CTS solar cell to ensure the sustainability at outdoor installation. After optimizing the thickness and carrier concentration of both layers, the best CTS cell is delivers 9.61% efficiency with back contact of molybdenum. However, after optimization of back contact metal work function the conversion efficiency is further increased to 17.87% for tungsten as back contact metal with a work function of 5.25 eV. The increased temperature shows a negative effect on output performance with a decline efficiency rate of -0.33/K. All these simulation results will give some important guides for feasibly fabricating higher efficiency CTS solar cells.

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Hwang, Ki-Hwan, Hyeon Jin Seo, Sang-Hun Nam, and Jin-Hyo Boo. "The Effect of Sodium Dodecyl Sulfate on PEDOT:PSS and Its Application to Organic Photovoltaic Solar Cells." Journal of Nanoscience and Nanotechnology 15, no. 10 (October 1, 2015): 7652–56. http://dx.doi.org/10.1166/jnn.2015.11186.

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Recently, the use of PEDOT:PSS in flexible device electrodes has been reported. PEDOT:PSS treatment consists of a step in which a small amount of surfactant is added to enhance the adhesion between PEDOT:PSS and the substrate or TCO materials. However, basic research into the effect of the surfactant is lacking. We studied the effects of sodium dodecyl sulfate (SDS) at controlled concentrations in aqueous PEDOT:PSS solution and that it enhanced the conductivity in the mixed thin films with surfactant and PEDOT:PSS. The thin films were prepared by the spin coating method. To study the structural effects on the resulting electrical properties, the thin films were investigated by FE-SEM (Field Emission Scanning Electron Microscopy) and AFM (Atomic Force Microscopy). At the same time, the electrical properties were investigated using a 4-point probe and solar simulator.

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Rodríguez-Guadarrama, L. A., I. L. Alonso-Lemus, J. Campos-Álvarez, and J. Escorcia-García. "Novel SnSb2S4 Thin Films Obtained by Chemical Bath Deposition using Tartaric Acid as Complexing Agent for Their Application as Absorber in Solar Cells." MRS Advances 4, no. 37 (2019): 2035–42. http://dx.doi.org/10.1557/adv.2019.307.

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ABSTRACTTernary Sn-Sb-S thin films with remarkable optical, electrical and structural properties were developed by chemical bath deposition. Tin and antimony chlorides and thioacetamide were used as tin, antimony, and sulfur ion sources, respectively, while tartaric acid was used as a complexing agent. XRD analysis of as-deposited films showed a combination of binary phases of SnS, Sn2S3, and Sb2S3, while after thermal treatment in nitrogen at 400 °C, the films became crystalline showing well-defined reflections of the ternary SnSb2S4. The heating also influenced the morphology, compactness, and thickness of the films. On the other hand, all the films showed an absorption coefficient higher than 104 cm-1, while the optical band gap of the as-deposited film decreased from 1.49 to 1.37 eV after heating at 400 °C. In addition, the photoconductivity of the films prior to heating was of 10-9 Ω-1 cm-1, while after that at 400 °C was of 10-7 Ω-1 cm-1. The evaluation of the ternary film in solar cells gave an open-circuit voltage Voc of 448 mV and short-circuit current density of Jsc of 2.4 mA/cm2.

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Amiri, Samaneh, and Sajjad Dehghani. "Design and Simulation of Single-Junction and Multi-junction Thin-Film Solar Cells Based on Copper Tin Sulfide." Journal of Electronic Materials 49, no. 10 (August 13, 2020): 5895–902. http://dx.doi.org/10.1007/s11664-020-08382-6.

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Paraye, Akanksha, Manivannan Ramachandran, and Noyel Victoria Selvam. "Facile Ultrasound-Assisted Synthesis of Copper Zinc Tin Sulfide Chalcogenide Nanoparticles for Thin Film Solar Cell Applications." Periodica Polytechnica Chemical Engineering 65, no. 1 (February 6, 2020): 42–49. http://dx.doi.org/10.3311/ppch.14923.

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Single-step ultrasound-assisted synthesis of Copper Zinc Tin Sulfide nanoparticles (CZTS) has been studied at two different frequencies. While the effects of frequency on the particle size of the CZTS nanoparticles were insignificant, a noticeable change was observed in composition. As-obtained particles presented the amorphous nature and spherical morphology with a high degree of agglomeration. Annealing of the synthesized CZTS nanoparticles increased the crystallinity while the sulfur content decreased considerably. The poly-dispersity and agglomeration of the nanoparticles increased upon annealing. The as-obtained CZTS nanoparticles synthesized at 45 kHz frequency presented a copper deprived and zinc-rich composition suitable for higher photo-conversion efficiency of the solar cells. The bandgap of the annealed and non-annealed particles ranged between 1.25 eV and 1.65 eV.

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Madiraju, Alekhya Venkata, Kshitij Taneja, Manoj Kumar, Anup Kumar Keshri, Sarang Balkrushna Mahajan, and Raghunandan Seelaboyina. "Synthesis of CZTS in Aqueous Media Using Microwave Irradiation." Conference Papers in Energy 2013 (May 23, 2013): 1–3. http://dx.doi.org/10.1155/2013/962730.

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Copper-Zinc-Tin-Sulfide (CZTS), a promising material for absorber layer application in thin film solar cells, has been synthesized in aqueous media by microwave irradiation technique. Compared to conventional synthesis methods, microwave irradiation is highly efficient, reliable, and less time consuming. The synthesized nanopowders were characterized for particle size by dynamic light scattering (DLS), phase by X-ray diffraction (XRD), and band-gap by UV-Vis-NIR spectroscopy. Various atmospheric processing methods are being evaluated for the deposition of absorber layers from CZTS nanopowder based ink.

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Ghosh, Sampad, Samira Yasmin, Jannatul Ferdous, and Bidyut Baran Saha. "Numerical Analysis of a CZTS Solar Cell with MoS2 as a Buffer Layer and Graphene as a Transparent Conducting Oxide Layer for Enhanced Cell Performance." Micromachines 13, no. 8 (August 3, 2022): 1249. http://dx.doi.org/10.3390/mi13081249.

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Copper zinc tin sulfide (CZTS) can be considered an important absorber layer material for utilization in thin film solar cell devices because of its non-toxic, earth abundance, and cost-effective properties. In this study, the effect of molybdenum disulfide (MoS2) as a buffer layer on the different parameters of CZTS-based solar cell devices was explored to design a highly efficient solar cell. While graphene is considered a transparent conducting oxide (TCO) layer for the superior quantum efficiency of CZTS thin film solar cells, MoS2 acts as a hole transport layer to offer electron–hole pair separation and an electron blocking layer to prevent recombination at the graphene/CZTS interface. This study proposed and analyzed a competent and economic CZTS solar cell structure (graphene/MoS2/CZTS/Ni) with MoS2 and graphene as the buffer and TCO layers, respectively, using the Solar Cell Capacitance Simulator (SCAPS)-1D. The proposed structure exhibited the following enhanced solar cell performance parameters: open-circuit voltage—0.8521 V, short-circuit current—25.3 mA cm−2, fill factor—84.76%, and efficiency—18.27%.

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Zyoud, Samer H., Ahed H. Zyoud, Naser M. Ahmed, Anupama R. Prasad, Sohaib Naseem Khan, Atef F. I. Abdelkader, and Moyad Shahwan. "Numerical Modeling of High Conversion Efficiency FTO/ZnO/CdS/CZTS/MO Thin Film-Based Solar Cells: Using SCAPS-1D Software." Crystals 11, no. 12 (November 26, 2021): 1468. http://dx.doi.org/10.3390/cryst11121468.

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The numerical modeling of a copper zinc tin sulfide (CZTS)-based kesterite solar cell is described in detail in this article. To model FTO/ZnO/CdS/CZTS/MO structured solar cells, the Solar Cell Capacitance Simulator-one-dimension (SCAPS-1D) program was utilized. Numerical modeling was used to estimate and assess the parameters of various photovoltaic thin film solar cells. The impact of different parameters on solar cell performance and conversion efficiency were explored. Because the response of a solar cell is partly determined by its internal physical mechanism, J-V characteristic characteristics are insufficient to define a device’s behavior. Regardless of the conviction in solar cell modeling, variable attributes as well as many probable conditions must be handled for simulation. Promising optimized results were obtained with a conversion efficiency of (η% = 25.72%), a fill factor of (FF% = 83.75%), a short-circuit current of (JSC = 32.96436 mA/cm2), and an open-circuit voltage of (VOC = 0.64 V). The findings will aid in determining the feasibility of manufacturing high-efficiency CZTS-based solar cells. First, in the SCAPS-1D environment, the impacts of experimentally constructed CZTS solar cells were simulated. The experimental data was then compared to the simulated results from SCAPS-1D. After optimizing cell parameters, the conversion efficiency of the improved system was observed to rise. The influence of system factors, such as the thickness, acceptor, and donor carrier concentration densities of the absorber and electron transport layers, and the effect of temperature on the efficiency of CZTS-based photovoltaic cells, was explored using one-dimensional SCAPS-1D software. The suggested findings will be extremely useful to engineers and researchers in determining the best method for maximizing solar cell efficiency, as well as in the development of more efficient CZTS-based solar cells.

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Mitzi, David B., Oki Gunawan, Teodor K. Todorov, and D. Aaron R. Barkhouse. "Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 371, no. 1996 (August 13, 2013): 20110432. http://dx.doi.org/10.1098/rsta.2011.0432.

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While cadmium telluride and copper–indium–gallium–sulfide–selenide (CIGSSe) solar cells have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr −1 production level, highlighting the promise of these rapidly growing thin-film technologies, reliance on the heavy metal cadmium and scarce elements indium and tellurium has prompted concern about scalability towards the terawatt level. Despite recent advances in structurally related copper–zinc–tin–sulfide–selenide (CZTSSe) absorbers, in which indium from CIGSSe is replaced with more plentiful and lower cost zinc and tin, there is still a sizeable performance gap between the kesterite CZTSSe and the more mature CdTe and CIGSSe technologies. This review will discuss recent progress in the CZTSSe field, especially focusing on a direct comparison with analogous higher performing CIGSSe to probe the performance bottlenecks in Earth-abundant kesterite devices. Key limitations in the current generation of CZTSSe devices include a shortfall in open circuit voltage relative to the absorber band gap and secondarily a high series resistance, which contributes to a lower device fill factor. Understanding and addressing these performance issues should yield closer performance parity between CZTSSe and CdTe/CIGSSe absorbers and hopefully facilitate a successful launch of commercialization for the kesterite-based technology.

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Steinmann, Vera, Rupak Chakraborty, Paul H. Rekemeyer, Katy Hartman, Riley E. Brandt, Alex Polizzotti, Chuanxi Yang, et al. "A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System." ACS Applied Materials & Interfaces 8, no. 34 (August 19, 2016): 22664–70. http://dx.doi.org/10.1021/acsami.6b07198.

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Rodríguez-Castro, Sergio, Carlos Álvarez-Macías, Michel Rivero, Lizbeth Salgado-Conrado, Rodrigo Loera-Palomo, Bernardo Reyes-Durán, and Jorge Narro-Ríos. "Evaluation of SnS:Cu Thin Film Properties Obtained by USP Technique to Implement It as an Absorbent Layer in Solar Cells Using SCAPS." Coatings 11, no. 7 (June 23, 2021): 754. http://dx.doi.org/10.3390/coatings11070754.

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Tin sulfide doped with copper (SnS:Cu) thin films were deposited on glass substrates by the ultrasonic spray pyrolysis (USP) technique at different concentration ratios (y = [Cu]/[Sn] = 0% (undoped), 2%, 5% and 10%). The aim of this work is to analyze the effect of copper on structural, morphological, and optoelectronic properties of SnS:Cu and discuss their possible application as an absorber layer in a solar cell structure proposed which is simulated using SCAPS software. X-ray diffraction (XRD) reveals an orthorhombic structure in the undoped sample and a cubic structure in doped ones. Raman spectroscopy suggests a possible unit cell size change due to the addition of Cu. Scanning electron microscopy (SEM) shows growth in grain density with an increasing y. Image analysis based on second-order features was used to discuss grain distribution. UV-VIS spectroscopy helps to find an increase of bandgap for the doped samples when copper concentration increases, going from 1.82 eV in the doped film y = 2% to 2.2 eV in the 10% doped samples. A value of 3.51 eV was found for the undoped sample y = 0%. A rise in both carrier concentration and mobility but a decrease in resistivity when y is increased was observed through the Hall–Van der Pauw technique. Simulations by SCAPS helped conclude that considering the material thickness, the SnS:Cu compound can be an alternative for implementation in the manufacturing of solar cells as an absorber layer since it is possible to obtain the optoelectronic properties necessary using the UPS economical technique.

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Nwori, Augustine Nwode, Laz Nnaedozie Ezenwaka, Ifeyinwa Euphemia Ottih, Ngozi Agatha Okereke, and Nonso Livinus Okoli. "Study of the Optical, Structural and Morphological Properties of Electrodeposited Copper Manganese Sulfide (CuMnS) Thin Films for Possible Device Applications." Trends in Sciences 19, no. 17 (August 24, 2022): 5747. http://dx.doi.org/10.48048/tis.2022.5747.

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Semiconductor thin films of CuMnS have been deposited onto conductive fluorine-doped tin oxide (FTO) glass substrate using an electrodeposition method to investigate their properties for possible applications. Copper sulfate, manganese sulfate and Thiourea were precursors used for sources of copper, manganese and sulphur ions respectively. The concentration of manganese ions was varied while keeping deposition voltage and time constant at 0.6 and 100 s, respectively. The films were characterized for optical, structural and morphological properties. The results obtained showed that the absorbance of the films is high in the visible (VIS) and near-infrared (NIR) regions but decreases towards NIR. The films transmittance is low in the VIS but increased in the NIR regions. The extinction coefficient is low in the VIS and NIR regions and decreases as concentration of manganese ion increased. The refractive index is high and initially increased slightly from 4.49 to 4.68 in the mid-VIS region while manganese concentration increased from 0.05 to 0.15 M and then decreased to the value of 2.73 as concentration of manganese ion increased further. The optical conductivity is high throughout the VIS and NIR regions while the optical bandgap energy is in the range of 1.5 to 2.05 eV and increases as manganese ion concentration increased. The XRD analysis showed that the deposited thin films of CuMnS are crystalline with average crystallite size and micro-strain in the range of 15.86 - 24. 45 nm and 3.97×10–3 - 6.13×10–3, respectively. The SEM results showed that the films are composed of particle sizes that are spherical in shape, uniform in sizes and densely packed together and consequently make the film surface rough. These properties exhibited by the films make them good materials for applications in photovoltaic calls, solar control coatings, photothermal applications and many other electronic devices that require high temperatures. HIGHLIGHTS This paper focused on the study of the effect of manganese ion concentration on the chalcogenide semiconductor thin films of CuMnS for possible device applications Electrodeposition method was used to fabricate the semiconductor thin films of CuMnS Optical, Structural and morphological properties of the thin films were characterized The deposited thin films of CuMnS were found to have good applications for photovoltaic cells and other optoelectronic device fabrications GRAPHICAL ABSTRACT

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Dell'Oro, Ruben, Roberto Della Vedova, Stefano Marchionna, and Luca Magagnin. "Co-Electrodeposition of Metallic Precursors for Cd-Doped Cu₂ZnSnS₄ (CZCTS) Kesterite Absorber for Photoelectrochemical Water Splitting." ECS Meeting Abstracts MA2022-02, no. 22 (October 9, 2022): 934. http://dx.doi.org/10.1149/ma2022-0222934mtgabs.

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Electrodeposition is widely studied in the fabrication of semiconductors for solar application, because of the low cost and easy scalability of this technique. For instance, in the last decades large effort has been dedicated to the electrodeposition of Cu2ZnSnS4 (CZTS) through different approaches, including either direct co-electrodeposition of the sulfide, the deposition of metallic alloy precursors or by stacked elemental layer, depositing Cu, Zn and Sn in sequence, then converting it into kesterite with thermal treatment in sulfur atmosphere.1–4 While being a promising alternative to CIGS (CuInGaS2), thanks to the non-toxicity and higher abundance of its constituting elements, CZTS absorbers still encounter some difficulties to their integration of high-performance solar devices. In fact, the electronic and optical properties of the material are affected by the narrow stoichiometric window acceptable for kesterite formation, inducing the segregation of secondary phases, along with the formation of lattice defects that act as recombination sites.5 A reported strategy to suppress the latter limitation is to introduce doping elements such as Ag6 and Cd7,8, partially substituting metallic atoms in the semiconductor, Cu and Zn respectively. The larger atomic radii of these elements can prevent the formation of antisite defects such as CuZn, largely increasing the semiconductor performance7. Here we propose a synthesis route of CZCTS through the co-electrodeposition of a thin film Cu-Sn-Zn-Cd alloy followed by sulfurization treatment. The deposition on SLG/Mo substrate is achieved with a sulfate-based electrolyte with citrate complexing agents and performed in three-electrode potentiostatic conditions. Proper bath formulation is designed to obtain a desirable Zn-rich, Cu-poor composition, varying the degree of Zn substitution with Cd. An alternative 2-step deposition of CuZnSn/Cd stacked precursor is also investigated, as an attempt to compensate the effect of the low H+ adsorption energy of cadmium leading to the formation of blisters in the quaternary alloy. Sulfurized samples characterization shows the formation of good quality of kesterite CZCTS, in spite of the segregation of secondary phases on the surface. Cd doping of CZTS is observed through the characteristic shift of the main kesterite XRD peak (112) and an increase of the average size of grains. The photocurrent of finalized photocathodes with structure SLG/Mo/CZCTS/CdS/Pt is measured under 10 mW/cm2 AM 1.5 radiation reporting an improvement with respect to the undoped analogue, increasing the current density at 0 V vs RHE from -5.73 to -7.18 mA/cm2 in the best case. Bibliography Colombara, D. et al. Electrodeposition of kesterite thin films for photovoltaic applications: Quo vadis? Phys. Status Solidi Appl. Mater. Sci. 212, 88–102 (2015). Ge, J. & Yan, Y. Controllable Multinary Alloy Electrodeposition for Thin-Film Solar Cell Fabrication: A Case Study of Kesterite Cu2ZnSnS4. iScience 1, 55–71 (2018). Clauwaert, K., Binnemans, K., Matthijs, E. & Fransaer, J. Electrochemical studies of the electrodeposition of copper-zinc-tin alloys from pyrophosphate electrolytes followed by selenization for CZTSe photovoltaic cells. Electrochim. Acta 188, 344–355 (2016). Jiang, F. et al. Pt/In2S3/CdS/Cu2ZnSnS4 Thin Film as an Efficient and Stable Photocathode for Water Reduction under Sunlight Radiation. J. Am. Chem. Soc. 137, 13691–13697 (2015). Polizzotti, A., Repins, I. L., Noufi, R., Wei, S. H. & Mitzi, D. B. The state and future prospects of kesterite photovoltaics. Energy Environ. Sci. 6, 3171–3182 (2013). Yuan, Z. K. et al. Engineering Solar Cell Absorbers by Exploring the Band Alignment and Defect Disparity: The Case of Cu- and Ag-Based Kesterite Compounds. Adv. Funct. Mater. 25, 6733–6743 (2015). Tay, Y. F. et al. Solution-Processed Cd-Substituted CZTS Photocathode for Efficient Solar Hydrogen Evolution from Neutral Water. Joule 2, 537–548 (2018). Su, Z. et al. Device Postannealing Enabling over 12% Efficient Solution-Processed Cu2ZnSnS4 Solar Cells with Cd2+ Substitution. Adv. Mater. 32, 1–12 (2020).

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Kanai, Ayaka, Keina Kusatsu, and Mutsumi Sugiyama. "Influence of Cd, S and Na atoms on photoluminescence in tin sulfide thin films." Japanese Journal of Applied Physics, October 21, 2022. http://dx.doi.org/10.35848/1347-4065/ac9caf.

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Abstract The fundamental defects around the p–n interface were analyzed based on low temperature photoluminescence (LT-PL) measurements to determine the origin of the various defects around the n-CdS/p-SnS structure in tin sulfide (SnS) solar cells. Particularly, the effects of Cd, S, and Na atoms on PL at the interface of a CdS layer and various treated SnS layers were examined. The PL peaks at 1.08 eV and 1.23 eV in the CdS/SnS structure, which were observed using the Cd partial electrolyte-treated SnS film, were associated with the formation of Cd-related defects. Furthermore, the PL peak at 1.27 eV in the CdS/SnS structure, which was observed using the sulfurized SnS film and the excess Na diffused SnS film, was associated with the formation of S-related defects such as OS defects. These findings present considerable potential for improving the efficiency of SnS solar cells.

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Avellaneda, David, M. T. S. Nair, and P. K. Nair. "SnS Thin Films in Chemically Deposited Solar Cell Structures." MRS Proceedings 1012 (2007). http://dx.doi.org/10.1557/proc-1012-y12-29.

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AbstractWe report photovoltaic cell structures on SnO2:F (TCO) coated glass substrates. Thin films of CdS, SnS, and CuS or PbS were deposited sequentially from chemical baths to produce the solar cell structures: SnO2:F-CdS- SnS (A)-CuS-Ag; SnO2:F-CdS- SnS (A)-PbS-Ag; and SnO2:F-CdS- SnS (B)-PbS-Ag. Heating SnS-CuS films results in the formation of Cu2SnS3, and sequential depositions of SnS and PbS to obtain solar cells produce stratified layers as required for solar cells. The photovoltaic characteristics, Voc 340 mV and Jsc 6 mA/cm2 in these structures suggest that absorber thin films based on tin sulfide are worth investigating as a relatively abundant and non-toxic material for solar cells.

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Ildan Ozmen, Sevda, Safak Hazal Temiz, and Hulya Metin Gubur. "Effects of annealing on SnS films produced by chemical bath deposition (CBD)." Physica Scripta, June 9, 2022. http://dx.doi.org/10.1088/1402-4896/ac7756.

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Abstract Tin sulfide (SnS) thin films were produced on glass substrates at 65 ºC by chemical bath deposition (CBD). Two of the obtained five identical films were annealed in an air atmosphere while the other two were annealed in a nitrogen atmosphere at different temperatures. The effects of annealing (at 150 °C and 250 °C in air and nitrogen atmospheres) on the optical, structural, and electrical properties of the films were investigated by UV-visible spectrophotometer, X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and Hall-effect measurement. The energy band gap of as-deposited SnS thin film was determined to be 1.16 eV, and it was observed to change with annealing. All of the as-deposited and annealed SnS films had orthorhombic structures. The optical phonon modes to orthorhombic SnS phases were determined by Raman shifts. The carrier type of all SnS films was identified as p-type using Hall measurement, and the changing carrier concentration, mobility, and resistivity values of the films were investigated depending on annealing conditions. The p-type SnS film can be used as an alternative material for the absorber layer in p-n heterojunction solar cell applications.

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Islam, Md Fakhrul, Nadhrah Md Yatim, Puvaneswaran Chelvanathan, Mohammad Tanvirul Ferdaous, Mohd Azman Hashim@Ismail, Anup Kumar Modak, and Prof Nowshad Amin. "A Critical Review of Cu2SnS3 (CTS) Thin Films Solar Cells." Malaysian Journal of Science Health & Technology, January 28, 2021. http://dx.doi.org/10.33102/mjosht.v7i.117.

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To increase energy demand, reliability, and increasing efficiency, thin-film solar cells get the main focus. Various types of solar cell like (Cu(In,Ga)Se2 (CIGS), Cadmium telluride (CdTe) and copper zinc tin sulfide (CZTS) based absorber compound now eliminated by CTS (Cu2SnS3) for different reason like toxicity, shortage and structural complexity. Focus on CTS is increasing because it is nontoxic and it is environmentally friendly. CTS-based solar cell's power conversation efficiency increases and 30% theoretical efficiency indicates it's developing sign. For analyzing the synthesis property, X-ray diffraction (XRD), Raman, Energy Dispersive X-ray (EDX), X-ray fluorescence (XRF) techniques are used. For the synthesis of thin-film solar cells like CTS, different physical methods are used among all sputtering methods. The electron beam evaporation vacuum evaporation method has exposed better efficiency and high product quality and reliability. Additionally, the composition, variation of thickness, structural defects, and elemental composition make the absorber layer's quality affect the performance. This paper has discussed the annealing treatment of CTS-based solar cell synthesis, and it's essential to improve the thin film properties of thin films. This paper describes the reason for efficiency reduction also the scope for future research.

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Tair, Sabrina, Prashant Ghediya, Abdelkader Nebatti Ech Chergui, Mhamed Guezzoul, Sanat Kumar Mukherjee, Kouider Driss-Khodja, Rajan Singh, Jaymin Ray, and Bouhalouane Amrani. "n-type SnS₂ thin films spray-coated from transparent molecular ink as a non-toxic buffer layer for solar photovoltaics." Physica Scripta, August 5, 2022. http://dx.doi.org/10.1088/1402-4896/ac8776.

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Abstract This paper reports the effect of solvent evaporation temperature on spray-coated tin disulfide (SnS2) thin films from molecular ink. Thiourea and tin chloride were the key chemical reagents used for the synthesis of SnS2 transparent ink under atmospheric conditions. The structural and compositional properties of SnS2 thin films revealed formation of pristine hexagonal SnS2. The films are smooth, homogeneous resulting in band gaps ranging from 2 to 2.22 eV suited for a Cd-free alternative buffer layer for Cu-based multicomponent solar cells. Thermoelectric power measurement showed that tin disulfide films exhibit n-type conductivity. Activation energy estimated from temperature variation of electrical conductivity measurement varied from 40 to 90 mV. Our results suggest that ink-processed SnS2 can be used as a potential alternative for opto-electronic devices such as thin film solar cell and photodetector devices.

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"Electrodeposition of Tin (II) Sulfide from 1-Butyl-3-methylimidazolium Dicyanamide at High Temperature for Thin Film Solar Cells." ECS Meeting Abstracts, 2012. http://dx.doi.org/10.1149/ma2012-02/38/2913.

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Nkuissi Tchognia, Joël Hervé, Youssef Arba, Khalid Dakhsi, Bouchaib Hartiti, Jean-Marie Ndjaka, Abderraouf Ridah, and Philippe Thevenin. "Solution-based deposition of wurtzite copper zinc tin sulfide nanocrystals as a novel absorber in thin film solar cells." Optical and Quantum Electronics 48, no. 4 (March 26, 2016). http://dx.doi.org/10.1007/s11082-016-0535-9.

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Bibi, Baseerat, Bita Farhadi, H. M. Noor ul Huda Khan Asghar, Waseem ur Rahman, and aimin liu. "Effect and optimization of the Zn₃P₂ back surface field on the efficiency of CZTS/CZTSSe tandem solar cell: A computational approach." Journal of Physics D: Applied Physics, October 21, 2022. http://dx.doi.org/10.1088/1361-6463/ac9c6c.

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Abstract Copper zinc tin sulfide (CZTS) and copper zinc tin sulfo selenide (CZTSSe) kesterite minerals are nontoxic and abundant in the earth with the promise of cost-effective photovoltaic applications. This study explains a tandem solar cell made of kesterite materials that can capture sunlight over a broad spectrum. The tandem solar cell under consideration consists of a wide bandgap CZTS thin-film upper subcell and an underlying narrow bandgap CZTSSe-based lower subcell. To begin with, SCAPS-1D was employed to model the experimental CZTS- and CZTSSe-based solar cells to fit the simulated and experimental results. Additionally, adding a back surface field (BSF) layer, a modification of the back contact, testing at different thicknesses, and doping of both subcells absorber layer result in improving the open-circuit voltage (Voc) to a maximum of 1.5 V, which led to an exceptional tandem solar cell efficiency of 23.99% at current matching circumstances. Furthermore, how light radiation power and temperature variations impact the proposed solar cell performance is being investigated. This study provides significant insights into the efficient tandem solar cell design and manufacture.

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Journal articles on the topic 'Solar cells, Thin film, Tin sulfide, SnS'

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