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Journal articles on the topic 'Sn-Te system'

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Author: Grafiati

Published: 6 September 2023

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1

Aliev, O. M., N. R. Akhmedova, V. M. Ragimova, D. S. Azhdarova, and E. A. Bakhshalieva. "Yb-Sn-Te ternary system." Russian Journal of Inorganic Chemistry 54, no. 11 (November 2009): 1830–34. http://dx.doi.org/10.1134/s0036023609110230.

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2

Kumar, Bhupendra, Manas Paliwal, Chandra Sekhar Tiwary, and Min-Kyu Paek. "Thermodynamic Optimization of the Ternary Ga-Sn-Te System Using Modified Quasichemical Model." Metals 11, no. 9 (August 30, 2021): 1363. http://dx.doi.org/10.3390/met11091363.

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Thermoelectric (TE) materials are of great interest to many researchers because they directly convert electric and thermal energy in a solid state. Various materials such as chalcogenides, clathrates, skutterudites, eutectic alloys, and intermetallic alloys have been explored for TE applications. The Ga-Sn-Te system exhibits promising potential as an alternative to the lead telluride (PbTe) based alloys, which are harmful to environments because of Pb toxicity. Therefore, in this study, thermodynamic optimization and critical evaluation of binary Ga-Sn, binary Sn-Te, and ternary Ga-Sn-Te systems have been carried out over the whole composition range from room temperature to above liquidus temperature using the CALPHAD method. It is observed that Sn-Te and Ga-Te liquids show the strong negative deviation from the ideal solution behavior. In contrast, the Ga-Sn liquid solution has a positive mixing enthalpy. These different thermodynamic properties of liquid solution were explicitly described using Modified Quasichemical Model (MQM) in the pair approximation. The asymmetry of ternary liquid solution in the Ga-Sn-Te system was considered by adopting the toop-like interpolation method based on the intrinsic property of each binary. The solid phase of SnTe was optimized using Compound Energy Formalism (CEF) to explain the high temperature homogeneity range, whereas solid solution, Body-Centered Tetragonal (BCT) was optimized using a regular solution model. Thermodynamic properties and phase diagram in the Ga-Sn-Te and its sub-systems were reproduced successfully by the optimized model parameters. Using the developed database, we also suggested several ternary eutectic compositions for designing TE alloy with improved properties.

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3

Sharma, R. C., and Y. A. Chang. "The Sn−Te (Tin-Tellurium) system." Bulletin of Alloy Phase Diagrams 7, no. 1 (February 1986): 72–80. http://dx.doi.org/10.1007/bf02874985.

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4

Jain, Ashish, R. Pankajavalli, R. Babu, S. Anthonysamy, and V. Ganesan. "Thermodynamic studies on Sn–Te–O system." Journal of Thermal Analysis and Calorimetry 112, no. 1 (September 28, 2012): 109–16. http://dx.doi.org/10.1007/s10973-012-2648-0.

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5

Zhan, Yongzhong, Jianbo Ma, Guanghua Zhang, Zhaohua Hu, and Chunhui Li. "Phase equilibria of Gd–Sn–Te system at Te rich corner." Journal of Alloys and Compounds 475, no. 1-2 (May 2009): 281–85. http://dx.doi.org/10.1016/j.jallcom.2008.08.015.

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6

Hamodi, A., Natheer B. Mahmood, Y. I. Hamodi, Farqad R. Saeed, and K. K. Naji. "Electronic structure models for lead chalcogenide system." Physica Scripta 97, no. 3 (February 2, 2022): 034001. http://dx.doi.org/10.1088/1402-4896/ac4dd0.

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Abstract Pb1-x Sn x Te is a topological crystalline insulator system with an even number of band Dirac cone at 001,110 and 111 orientations, which represent a trivial system under Kane Mele classification. However, in the past few years, the topological surface states feature in Pb1-x Sn x Te that protected by mirror symmetry drew attention. In contrast to Kane Mele’s topological material that protects by time-reversal symmetry. Pb1-x Sn x Te system has a crystal structure phase transition that can drive the topological features of the system. A systematic study on the energy band gap versus temperature and composition shows an interesting regime at x = (0.3–0.7) and T = 70–130 K. (i.e. the topological crystalline insulator regime, phase transition regime). In this paper, we focused on how the following parameters (energy bandgap, temperature T, composition x) connect by three stander models.

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7

Haruvi-Busnach, I., J. Dror, and N. Croitoru. "Chalcogenide glasses Ge–Sn–Se, Ge–Se–Te, and Ge–Sn–Se–Te for infrared optical fibers." Journal of Materials Research 5, no. 6 (June 1990): 1215–23. http://dx.doi.org/10.1557/jmr.1990.1215.

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Chalcogenide glasses of the systems Ge–Sn–Se, Ge–Se–Te, and Ge–Sn–Se–Te have been prepared. Several compositions were found suitable for drawing fibers for CO2 laser radiation (λ = 10.6 μm) transmission. The glasses were characterized by x-ray diffraction, DSC (Differential Scanning Calorimetry), SEM with EDX analysis, FTIR spectrometry, density, and microhardness measurements. The glass transition temperature and microhardness of Ge–Se–Sn and Ge–Sn–Se–Te glasses decreased with increasing Sn content, for most of the samples. The region of high IR transparency of Ge–Se–Sn, Ge–Se–Te, and Ge–Sn–Se–Te glasses was slightly expanded (1–2 μm) toward longer wavelengths, compared to Ge–Se glasses, mainly for the glasses containing 70 at.% Se. The intensity of the impurity absorption peak of Ge–O (at λ ∼ 12.8 μm), which usually appears in Ge–Se glasses, was reduced or absent in Ge–Sn–Se–Te glasses. The best fibers were produced with the glass composition Ge–0.8Sn0.2Se3.5Te0.5. An attenuation of 20 dB/m at 10.6 μm, and a transmitted maximum power density of 2.4 ⊠ 106 W/m2 were measured. The mechanical and optical characteristics of these glasses have been related to the glasses structure. Corresponding to the reduced masses of the bonds formed in the Ge–Sn–Se–Te system (in the amorphous region), it is expected that the multiphonon edge is slightly shifted. As a consequence, as was measured, the transparency region has been expanded by less than 2 μm toward longer wavelengths.

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8

Aramanda, Shanmukha Kiran, Sai Kiran Salapaka, Sumeet Khanna, Kamanio Chattopadhyay, and Abhik Choudhury. "Exotic colony formation in Sn-Te eutectic system." Acta Materialia 197 (September 2020): 108–21. http://dx.doi.org/10.1016/j.actamat.2020.07.036.

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9

Kattner, U., H. L. Lukas, and G. Petzow. "Optimization and calculation of the Sn-Te system." Journal of the Less Common Metals 114, no. 1 (December 1985): 129–44. http://dx.doi.org/10.1016/0022-5088(85)90397-2.

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10

Chiu, Chen-nan, Chia-ming Hsu, Sinn-wen Chen, and Hsin-jay Wu. "Phase Equilibria of the Sn-Bi-Te Ternary System." Journal of Electronic Materials 41, no. 1 (August 18, 2011): 22–31. http://dx.doi.org/10.1007/s11664-011-1730-x.

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11

Chen, Sinn-wen, Jou-i. Lee, and Cheng-nan Chiu. "Liquidus projection of the ternary As–Sn–Te system." Scripta Materialia 51, no. 9 (November 2004): 853–56. http://dx.doi.org/10.1016/j.scriptamat.2004.07.009.

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12

Qin, Bing-Chao, Yu Xiao, Yi-Ming Zhou, and Li-Dong Zhao. "Thermoelectric transport properties of Pb–Sn–Te–Se system." Rare Metals 37, no. 4 (December 20, 2017): 343–50. http://dx.doi.org/10.1007/s12598-017-0991-9.

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13

Chang, Jui-shen, Sinn-wen Chen, Kuo-chun Chiu, Hsin-jay Wu, and Jee-jay Chen. "Liquidus Projection of the Ag-Sn-Te Ternary System." Metallurgical and Materials Transactions A 45, no. 9 (April 30, 2014): 3728–40. http://dx.doi.org/10.1007/s11661-014-2318-x.

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14

Cui, Jiaxin, Cuiping Guo, Changrong Li, and Zhenmin Du. "[P43] A thermodynamic assessment of the Se−Sn−Te system." Calphad 51 (December 2015): 386. http://dx.doi.org/10.1016/j.calphad.2015.01.132.

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15

Roychowdhury, Subhajit, U. Sandhya Shenoy, Umesh V. Waghmare, and Kanishka Biswas. "An enhanced Seebeck coefficient and high thermoelectric performance in p-type In and Mg co-doped Sn1−xPbxTe via the co-adjuvant effect of the resonance level and heavy hole valence band." Journal of Materials Chemistry C 5, no. 23 (2017): 5737–48. http://dx.doi.org/10.1039/c7tc00009j.

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16

Shtanov, V. I., O. V. Zatolochnaya, K. Yu Veremeev, M. E. Tamm, and O. E. Timofeeva. "A contribution to the phase diagram of the system Ge–Sn–Te and the conditions of (Sn,Ge)Te crystal growth." Journal of Alloys and Compounds 476, no. 1-2 (May 2009): 812–16. http://dx.doi.org/10.1016/j.jallcom.2008.09.119.

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17

Liu, Shaobo, Jie Yuan, Sheng Ma, Zouyouwei Lu, Yuhang Zhang, Mingwei Ma, Hua Zhang, et al. "Magnetic-Field-Induced Spin Nematicity in FeSe_{1 – x}S_x and FeSe_{1 – y}Te_y Superconductor Systems." Chinese Physics Letters 38, no. 8 (September 1, 2021): 087401. http://dx.doi.org/10.1088/0256-307x/38/8/087401.

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The angular-dependent magnetoresistance (AMR) of the ab plane is measured on the single crystals of iron-chalcogenide FeSe1–x S x (x = 0, 0.07, 0.13 and 1) and FeSe1–y Te y (y = 0.06, 0.61 and 1) at various temperatures under fields up to 9 T. A pronounced twofold-anisotropic carrier-scattering effect is identified by AMR, and attributed to a magnetic-field-induced spin nematicity that emerges from the tetragonal normal-state regime below a characteristic temperature T sn. This magnetically polarized spin nematicity is found to be ubiquitous in the isoelectronic FeSe1–x S x and FeSe1–y Te y systems, no matter whether the sample shows an electronic nematic order at T s ≲ T sn, or an antiferromagnetic order at T N < T sn, or neither order. Importantly, we find that the induced spin nematicity shows a very different response to sulfur substitution from the spontaneous electronic nematicity: The spin-nematic T sn is not suppressed but even enhanced by the substitution, whereas the electronic-nematic T s is rapidly suppressed, in the FeSe1–x S x system. Furthermore, we find that the superconductivity is significantly suppressed with the enhancement of the induced spin nematicity in both FeSe1–x S x and FeSe1–y Te y samples.

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18

Chorba, O. J., M. J. Filep, A. I. Pogodin, T. O. Malakhovska, and M. Yu Sabov. "TRIANGULATION OF THE Cu-Sn-Se SYSTEM." Scientific Bulletin of the Uzhhorod University. Series «Chemistry» 46, no. 2 (February 10, 2022): 22–27. http://dx.doi.org/10.24144/2414-0260.2021.2.22-27.

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Copper-containing compounds exhibit a wide range of properties, including thermoelectric, photoelectric, optical magnetic, superionic, superconducting, etc., which determines the areas of their practical use. In recent years, studies of complex copper selenides as promising thermoelectric (TE) materials have been actively carried out due to their advantages over traditional TE materials. Like binary Cu2Se, ternary selenides have low phonon thermal conductivity and high electrical conductivity and thermoelectric quality factor. Typically, copper-containing compounds belong to the p-type conductors and crystallize in four main structural types, among which phases with a diamond-like structure should be distinguished. Data on the nature of physicochemical interaction in the Cu – Sn – Se system are limited and contradictory. In view of this, it is important to carry out the triangulation of the ternary system Cu–Sn–Se, which is the first stage of the study of multicomponent systems. The investigated alloys of the Cu – Sn – Se system were obtained by fusing elementary components of high purity in vacuum quartz ampoules. The obtained alloys were investigated using X-ray powder diffraction (XRD) and differential thermal (DTA) analyzes. At the temperature of homogenizing annealing (170 ° С) there are seven binary Cu2Se, CuSe, CuSe2, Cu6Sn5, Cu3Sn, SnSe, SnSe2 and one ternary phase Cu2SnSe3 stable in the Cu – Sn – Se ternary system. The existence of the ternary phase of Cu2SnSe4 has not been confirmed, because the alloy corresponding to its stoichiometric composition is a mixture of Cu2SnSe3 and Se. To establish quasibinary sections of the Cu – Sn – Se system were performed the synthesis and phase analysis of only the significant points in the most informative areas. This ensures the establishment of the nature of the maximum number of quasibinary sections with a minimum number of syntheses. According to the results of phase analysis in combination with the literature data the triangulation of the Cu – Sn – Se system was carried out at 170 ° С. The quasibinarity of the Cu2Se – SnSe, Cu2Se – SnSe2, Cu2SnSe3 – Se, Cu2SnSe3 – SnSe, Cu6Sn5 – SnSe, Cu3Sn – SnSe, and Cu3Sn – Cu2Se sections was confirmed, and the quasibinarity of the Cu3Sn – Cu2Se was established at first. Keywords: triangulation; quasibinary section; phase analysis.

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19

Leute, Volkmar, S. Brinkmann, J. Linnenbrink, and H. M. Schmidtke. "The Phase Diagram of the Quasiternary System (Sn, Pb) (S,Te)." Zeitschrift für Naturforschung A 50, no. 4-5 (May 1, 1995): 459–67. http://dx.doi.org/10.1515/zna-1995-4-520.

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Abstract The phase diagram of the quasiternary system (Snt Pb1-k)(S,Te1-l) for 900 K is determined by X-ray diffraction and by electron microprobe analysis. Moreover, the free enthalpy faces g(k, I) for the phases with cubic rocksalt structure (cub) or with the orthorhombic SnS structure (orh) are calculated from the interaction parameters and from the orh → cub transition data of the 4 quasibinary subsystems. The interaction parameters are also used to calculate the termodynamic factor for interdiffusion along quasibinary sections through the phase square and to calculate the energies of four-particle clusters. By application of the cluster model one obtains information on the local environment of the mixing particles and on the cluster processes that have effect upon interdiffusion

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20

Cui, Jiaxin, Cuiping Guo, Lei Zou, Changrong Li, and Zhenmin Du. "Experimental investigation and thermodynamic modeling of the Se–Sn–Te system." Journal of Alloys and Compounds 642 (September 2015): 153–65. http://dx.doi.org/10.1016/j.jallcom.2015.04.049.

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21

Kattner, Ursula, Hans Leo Lukas, Günter Petzow, Bernd Gather, Eberhard Irle, and Roger Blachnik. "Excess Enthalpy Measurements and Thermodynamic Evaluation of the Sn-Pb-Te System." International Journal of Materials Research 79, no. 1 (January 1, 1988): 32–40. http://dx.doi.org/10.1515/ijmr-1988-790106.

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22

ZHANG, Guanghua, Yongzhong ZHAN, and Chunliu LI. "Phase diagram of Er-Sn-Te system for diluted magnetic semiconductor developments." Journal of Rare Earths 31, no. 8 (August 2013): 800–803. http://dx.doi.org/10.1016/s1002-0721(12)60361-5.

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23

Pal, Shiv Kumar, N. Mehta, S. S. Fouad, and H. E. Atyia. "Dielectric behavior of amorphous thin films of Se–Te–Sn-Ge system." Solid State Sciences 104 (June 2020): 106289. http://dx.doi.org/10.1016/j.solidstatesciences.2020.106289.

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24

Chen, Chung-yi, Hsin-jay Wu, and Sinn-wen Chen. "Liquidus projection and phase equilibria isothermal section of Se–Sn–Te system." Journal of Alloys and Compounds 547 (January 2013): 100–106. http://dx.doi.org/10.1016/j.jallcom.2012.08.071.

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25

Lu, Baobiao, Mingyuan Wang, Jian Yang, Haigang Hou, Xiangzhao Zhang, Zhongqi Shi, Junlin Liu, Guanjun Qiao, and Guiwu Liu. "Dense twin and domain boundaries lead to high thermoelectric performance in Sn-doped Cu₃SbS₄." Applied Physics Letters 120, no. 17 (April 25, 2022): 173901. http://dx.doi.org/10.1063/5.0084862.

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Exploring high-performance medium-temperature thermoelectric (TE) materials with nontoxicity and low price is of great significance for waste heat recovery. In spite of low price and nontoxicity, the poor intrinsic electrical properties of Cu3SbS4 restrict its potential commercial applications. Herein, intermediate-phase-free Cu3SbS4-based bulks were fabricated by incorporating a sulfurization process between melting and sintering, and the as-formed dense twin and domain boundaries in a Sn-doped Cu3SbS4 system can significantly enhance the electrical conductivity and retain a higher level of the Seebeck coefficient based on the energy filtering effect and band flattening and convergence. The high power factor of ∼13.6 μW cm−1 K−2 and relatively low thermal conductivity are achieved for a 1.5%Sn-doped Cu3SbS4 sample, resulting in a record zT of ∼0.76 at 623 K in Cu3SbS4-based systems. This work develops an effective pathway to synthesize intermediate-phase-free Cu3SbS4-based TE materials and provides an effective strategy for enhancing TE performance in diamond-like semiconductors by interface engineering.

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26

Flanagan, Kerry R., James D. Parish, Gabriele Kociok-Köhn, and Andrew L. Johnson. "Reactivity of N-Heterocyclic Stannylenes: Oxidative Addition of Chalcogen Elements to a Chiral NH-Sn System." Inorganics 11, no. 8 (July 27, 2023): 318. http://dx.doi.org/10.3390/inorganics11080318.

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The reactivity of the racemic N-heterocyclic stannylene [{MeHCN(tBu)}Sn] (1) with the chalcogenide elements O2, S, Se, and Te has been investigated. In the case of the reaction of 1 with molecular oxygen, the cyclic tristannoxane complex [{MeHCN(tBu)}2Sn(μ-O)]3 (3) was isolated and characterised. NMR studies (1H, 13C, and 119Sn) show the formation of D3- and C2- symmetric assemblies. The reaction of 1 with S, Se, and Te, respectively, yielded the cyclo-distannachalcogenide complexes, [{MeHCN(tBu)}2Sn(μ-E)]3 (4: E = S, 5: E = Se, 6: E = Te), again with multinuclear NMR studies proving the formation of C2- and Cs-symmetric assemblies. Single crystal X-ray diffraction studies have been used to elucidate the molecular structures of the products of oxidative addition, 3, 4, 5, and 6.

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27

Adenis, Claire, and Oliver Lindqvist. "On the ternary system Sn-Te-I: investigation of the SnI2-Te, Tel4-SnI2 and SnTe-TeI4 subsections." Thermochimica Acta 179 (April 1991): 247–56. http://dx.doi.org/10.1016/0040-6031(91)80354-l.

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28

Zhang, Guanghua, Yongzhong Zhan, Zhulin Yang, Zhaohua Hu, Xinjiang Zhang, and Jianbo Ma. "Experimental partial phase relationships of the Dy–Sn–Te system at room temperature." Journal of Alloys and Compounds 485, no. 1-2 (October 2009): 192–95. http://dx.doi.org/10.1016/j.jallcom.2009.05.143.

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29

Assenov, R., V. Moshnikov, B. Patarov, and D. Yaskov. "Peculiarities in the X-ray Spectral Microanalysis of the SnTeI System." Crystal Research and Technology 21, no. 11 (November 1986): 1487–91. http://dx.doi.org/10.1002/crat.2170211121.

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30

Khan, W. M., W. H. Shah, N. Khan, M. Tufail, S. Khan, and W. A. Syed. "Effects on the seebeck co-efficient and electrical properties of Tl10-x ATe6 (A= Pb & Sn) in chalcogenide system." Journal of Ovonic Research 17, no. 2 (March 2021): 201–8. http://dx.doi.org/10.15251/jor.2021.172.201.

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The different elements are doping in the tellurium telluride to determine the different properties like electrical and thermal properties of nanoparticles. The chalcogenide nanoparticles can be characteristics by the doping of the different metals which are like the holes. We present the effects of Pb and Sn doping on the electrical and thermoelectric properties of Tellurium Telluride Tl10-xPbxTe6 and Tl10-xSnxTe6(x=1.00, 1.25, 1.50, 1.75, 2.00) respectively, which were prepared by solid state reactions in an evacuated sealed silica tubes. Structurally, all these compounds were found to be phase pure as confirmed by the x-rays diffractometery (XRD) and energy dispersive X-ray spectroscopy (EDS) analysis. The thermo-power or Seebeck co-efficient (S) was measured for all these compounds which show that S increases with increasing temperature from 295 to 550 K. The Seebeck coefficient is positive for the whole temperature range, showing p-type semiconductor characteristics. Similarly, the electrical conductivity (σ) and the power factors have also complex behavior with Pb and Sn concentrations. The power factor (PF=S 2 σ) observed for Tl10-xPbxTe6 and Tl10-xSnxTe6 compounds are increases with increase in the whole temperature range (290 K-550 K) studied here. Telluride’s are narrow band-gap semiconductors, with all elements in common oxidation states, according to (Tl + ) 9 (Pb 3+ )(Te 2- )6 and (Tl + )9(Sn 3+ )(Te 2- )6. Phases range were investigated and determined with different concentration of Pb and Sn with consequents effects on electrical and thermal properties.

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31

Gospodinov, G. G. "Possible tellurites in the three-component system Sn-Te-O and their thermal stability." Thermochimica Acta 91 (September 1985): 351–55. http://dx.doi.org/10.1016/0040-6031(85)85228-x.

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32

Horichok, I. V., L. I. Nykyruy, T. O. Semko, M. A. Lopуanko, O. L. Sokolov, and M. O. Galushchak. "Structure and Properties of Materials on the Basis of Ag-Pb-Sb-Te with High Thermоelectric Figure of Merit." Фізика і хімія твердого тіла 17, no. 1 (March 15, 2016): 114–28. http://dx.doi.org/10.15330/pcss.17.1.114-128.

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The review of works devoted to the study of thermoelectric, thermodynamic and mechanical properties of highly efficient thermoelectric materials in the system Ag-Pb (Sn) -Sb-Te. It is shown that based on them can be obtained as n-, and district branches of thermoelectric converters with parameter dimensionless thermoelectric figure of merit ZT ≈ 1.5 - 2.0.

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33

Yin, Wenlong, Zuohong Lin, Lei Kang, Bin Kang, Jianguo Deng, Zheshuai Lin, Jiyong Yao, and Yicheng Wu. "Syntheses, structures, and optical properties of Ba4Ga4SnSe12 and Ba6Ga2SnSe11." Dalton Transactions 44, no. 5 (2015): 2259–66. http://dx.doi.org/10.1039/c4dt02244k.

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Two new quaternary selenides Ba₄Ga₄SnSe₁₂ and Ba₆Ga₂SnSe₁₁, representing the first two members in the A/M/Sn/Q (A = alkaline-earth metal; M = Al, Ga, In; Q = S, Se, Te) system, have been synthesized.

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34

Vymazalova, A., and M. Drabek. "THE SYSTEM Pd-Sn-Te AT 400 C AND MINERALOGICAL IMPLICATIONS. I. THE BINARY PHASES." Canadian Mineralogist 48, no. 5 (October 1, 2010): 1041–50. http://dx.doi.org/10.3749/canmin.48.5.1041.

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35

Vymazalova, A., and M. Drabek. "THE SYSTEM Pd-Sn-Te AT 400 C AND MINERALOGICAL IMPLICATIONS. II. THE TERNARY PHASES." Canadian Mineralogist 48, no. 5 (October 1, 2010): 1051–58. http://dx.doi.org/10.3749/canmin.48.5.1051.

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36

Sharma, Arvind, and Neeraj Mehta. "Observation of switching behavior in some multi-component glasses of Se-Te-Sn-Pb system." Materials Letters 178 (September 2016): 178–80. http://dx.doi.org/10.1016/j.matlet.2016.03.043.

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37

Esaka, T. "Oxide ion conduction in the sintered oxides of the system Bi2O3_MO2 (M=Ti, Sn, Zr, Te." Solid State Ionics 36, no. 1-2 (October 1989): 129–32. http://dx.doi.org/10.1016/0167-2738(89)90072-6.

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38

Jihad, Ibnu, Juhri Hendrawan, Adam Sukma Putra, Kuwat Triyana, and Moh Adhib Ulil Absor. "Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method." Indonesian Journal of Chemistry 20, no. 3 (May 9, 2020): 697. http://dx.doi.org/10.22146/ijc.49331.

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The Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, Te) exhibiting a pair inplane Rashba rotation of the spin textures. A strong correlation has also been found between the size of the Rashba parameter and the atomic number of chalcogen atom for Γ and M point in the first Brillouin zone. Our investigation clarifies that the buckled square lattice are promising for inducing the substantial Rashba splitting suggesting that the present system is promising for spintronics device.

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39

Jandl, Isabella, Federica Boero, Herbert Ipser, and Klaus W. Richter. "Phase equilibria and structural investigations of the general NiAs-type in the ternary system Ni–Sn–Te." Intermetallics 46 (March 2014): 199–210. http://dx.doi.org/10.1016/j.intermet.2013.11.018.

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40

Srivastava, Ankita, and Neeraj Mehta. "Simultaneous Determination of Transport Properties of Some Multi-Component Glasses of Se–Te–Sn–Ag (STSA) System." Materials Focus 6, no. 5 (October 1, 2017): 558–63. http://dx.doi.org/10.1166/mat.2017.1437.

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41

Sinyakova, E. F., V. I. Kosyakov, and N. A. Goryachev. "Formation of drop-shaped inclusions based on Pt, Pd, Au, Ag, Bi, Sb, Te, As during crystallization of the intermediate solid solution in the Cu-Fe-Ni-S system." Доклады Академии наук 489, no. 1 (November 10, 2019): 70–74. http://dx.doi.org/10.31857/s0869-5652489170-74.

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The phase and chemical composition of drop-shaped inclusions in directionally crystallized intermediate solid solution was studied. The initial melt contained (in mol.%): Fe 31,79; Cu 15,94; Ni 1,70; S 50,20; Sn 0,05; As 0,04; Pt, Pd, Rh, Ru, Ag, Au, Se, Te, Bi, Sb 0,03. Experimental data indicate the simultaneous crystallization of two types of liquids upon cooling of the initial sulfide melt. One of them is formed in the subsystem (Pd, Au, Ag)-(Bi, Sb, Te), and the second - in the subsystem Cu-(S, Bi, Sb, Te). When these liquids solidified, inclusions formed, which we divided into four classes. Class I has a eutectic-like structure with a matrix of Pd(Bi,Sb)xTe1-x solid solution and Au crystallites with Ag, Cu, and Pd impurities. Class II is formed from sulfosalts with inclusions of Bi and Au. Class III includes inclusions of sperrylite Pt(As,S)2. Class IV forms compound inclusions from fragments of classes I-III. The experiment described in the work showed a more complex behavior of noble metals and metalloid impurities during the crystallization of complex sulfide-metalloid melts compared with the previously described data of isothermal experiments.

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42

Deidda, Matteo Luca, Dario Fancello, Marilena Moroni, Stefano Naitza, and Ignazio Scano. "Spatial and Metallogenic Relationships between Different Hydrothermal Vein Systems in the Southern Arburèse District (SW Sardinia)." Environmental Sciences Proceedings 6, no. 1 (February 25, 2021): 13. http://dx.doi.org/10.3390/iecms2021-09363.

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The SW Sardinian basement hosts various ore deposits linked to geological processes active from Cambrian to post-Variscan times. In particular, the Southern Arburèse district hosts several granite-related W-Sn-Mo deposits and a 10 km-long system of Ni-Co-As-Bi-Ag ± Au bearing five-element veins. New investigations into the eastern and central parts of the district (Pira Inferida mine sector) were performed to understand the poorly documented spatial and metallogenic relationships between these systems. The granite-related deposits consist of massive wolframite-quartz (W-Bi-Te-Au) and molybdenite-quartz veins, linked to the early Permian (289 ± 1 Ma) Mt. Linas granite, that are cross-cut by the five-element veins. The wolframite-quartz veins, observed by optical and electron (SEM-EDS) microscopy, show abundant native Bi, Bi-Te phases and native Au suggesting a W-Bi-Te-Au hydrothermal system. The five-element veins exhibit breccia and cockade textures, enveloping clasts of the Ordovician host-rocks and locally small fragments of the earlier W-Mo-quartz veins. The five-element vein paragenesis includes three main stages, from older to younger: (1) native elements (Bi ± Au); (2) Ni-Co arsenides-sulfarsenides in quartz gangue; and (3) Pb-Zn-Cu ± Ag sulfides in siderite gangue. The mineralogical, geochemical and isotopic features of the five-element vein swarm are closely comparable to five-element deposits elsewhere in Europe (Germany, Switzerland, Italian Alps). While the source of Ni and Co is still unknown, the high Bi contents, as well as Au enrichment in the five-element veins, suggest selective remobilization of these elements, and perhaps others, from the granite-related W-Bi-Te-Au veins. The five-element vein system was likely formed during a post-289 ± 1 Ma and post-Variscan metallogenic event.

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43

Tarasov, Artem V., Tatiana P. Makarova, Dmitry A. Estyunin, Alexander V. Eryzhenkov, Ilya I. Klimovskikh, Vladimir A. Golyashov, Konstantin A. Kokh, Oleg E. Tereshchenko, and Alexander M. Shikin. "Topological Phase Transitions Driven by Sn Doping in (Mn1−xSnx)Bi2Te4." Symmetry 15, no. 2 (February 10, 2023): 469. http://dx.doi.org/10.3390/sym15020469.

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The antiferromagnetic ordering that MnBi2Te4 shows makes it invariant with respect to the combination of the time-reversal and primitive-lattice translation symmetries, giving rise to its topologically nontrivial nature and a number of fundamental phenomena. At the same time, the possibility to control the electronic and magnetic properties of this system can provide new effective ways for its application in devices. One of the approaches to manipulate MnBi2Te4 properties is the partial substitution of magnetic atoms in the compound with atoms of non-magnetic elements, which inevitably affect the interplay of magnetism and band topology in the system. In this work, we have carried out theoretical modelling of changes in the electronic structure that occur as a result of increasing the concentration of Sn atoms at Mn positions in the (Mn1−xSnx)Bi2Te4 compound both using Korringa–Kohn–Rostoker (KKR) Green’s function method as well as the widespread approach of using supercells with impurity in DFT methods. The calculated band structures were also compared with those experimentally measured by angle-resolved photoelectron spectroscopy (ARPES) for samples with x values of 0, 0.19, 0.36, 0.52 and 0.86. We assume that the complex hybridization of Te-pz and Bi-pz orbitals with Sn and Mn ones leads to a non-linear dependence of band gap on Sn content in Mn positions, which is characterized by a plateau with a zero energy gap at some concentration values, suggesting possible topological phase transitions in the system.

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44

Yoshida, Hironori, Jiang Liu, Sun-Joong Kim, Xu Gao, Shigeru Ueda, and Shin-ya Kitamura. "Influence of the Interfacial Tension on the Droplet Formation by Bubble Rupture in Sn(Te) and Salt System." ISIJ International 56, no. 11 (2016): 1902–9. http://dx.doi.org/10.2355/isijinternational.isijint-2016-303.

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45

Muragi, B. D., M. J. Zope, and J. K. Zope. "Mechanism for NonlinearI ? V Behaviour and the Temperature Dependence of Threshold Switching in the Se-Te-Sn System." Applied Physics A Solids and Surfaces 46, no. 4 (August 1988): 299–303. http://dx.doi.org/10.1007/bf01210350.

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46

Muragi, B. D., M. J. Zope, and J. K. Zope. "Mechanism for nonlinearI-V behaviour and the temperature dependence of threshold switching in the Se-Te-Sn system." Applied Physics A Solids and Surfaces 46, no. 4 (August 1988): 299–303. http://dx.doi.org/10.1007/bf01141596.

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47

Tolstykh, Nadezhda D., Liudmila M. Zhitova, Maria O. Shapovalova, and Ivan F. Chayka. "The evolution of the ore-forming system in the low sulfide horizon of the Noril'sk 1 intrusion, Russia." Mineralogical Magazine 83, no. 5 (July 25, 2019): 673–94. http://dx.doi.org/10.1180/mgm.2019.47.

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AbstractWe present here new data on the low-sulfide mineralisation in the upper endocontact of the Noril'sk 1 intrusion. Twenty four mineral species of platinum-group elements and their solid solutions, as well as numerous unnamed phases, including an Sb analogue of vincentite, As and Sn analogues of mertieite-I and a Sn analogue of mertieite-II have been found. It is shown that the features of the mineral association: (1) the atypical trend of TiO2 and Fe2+ in chromian spinel; (2) the composition of the Pt–Fe alloys with a Fe/Fe + Pt range of 0.26–0.37 (logfO2 ≈ – (9–10); and (3) crystallisation of high-temperature sperrylite from silicate melt (at >800°C and logfS2 < –10.5), which is possible under fO2 of FMQ to FMQ-2 in mafic magma, are due to the reducing conditions of their formation and evolution. Droplet-like inclusions of silicate-oxide minerals in сhromian spinels and sulfides in platinum-group minerals are interpreted to be trapped droplets of co-existing sulfide melt. The captured sulfide melt has evolved in the direction of increasing the fugacity of sulfur: troilite + pentlandite (Fe>Ni) – in sperrylite (paragenesis I) to monoclinic pyrrhotite + pentlandite (Ni≈Fe) + chalcopyrite – in Pt–Fe alloys (paragenesis II). Paragenesis from the sulfide aggregates in the silicate matrix are more fractionated: pyrrhotite + pyrrhotite (Ni>Fe) + chalcopyrite (III) and pyrite + pentlandite (Ni>>Fe) + millerite (IV). Pd arsenides and antimonides crystallised later than sperrylite and isoferroplatinum, as a result of the evolution of a sulfide melt with an increased activity of the element ligands (Te, Sn, Sb and As).

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48

Aliyev, F. R., E. N. Orujlu, and D. M. Babanly. "Synthesis and study of a new mixed-layered compound GeBi3Te4 belonging to the nBi2–mGeBi2Te4 homologous series." Bulletin of the Karaganda University. "Chemistry" series 105, no. 1 (March 30, 2022): 92–98. http://dx.doi.org/10.31489/2022ch1/92-98.

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In light of the structural properties of tetradymite-like layered chalcogenide compounds, the mixed-layered compound GeBi3Te4 was predicted and synthesized for the first time, which belongs to the nBi2–mGeBi2Te4 homologous series in the Ge-Te-Bi system. A polycrystal of a new phase was synthesized, and its single crystal was grown by the Bridgman–Stockbarger method. The obtained samples were investigated by differential thermal analysis (DTA) and powder X-ray diffraction (XRD). It was found that the compound melts peritectically at 563 C and has a rhombohedral lattice-type structure with the following lattice parameters: a =4.3625 (5) Å, c = 31.381 (2) Å (sp. gr R3m). The crystal structure of the layered van der Waals compound GeBi3Te4 consists of a repetition of seven-layer GeBi2Te4 packets and two-layer Bi packets in the form of -7-2-7-7-2-7-7-2-7- which differ from the previously discovered GeBi4Te4 phase, which consists of unit cells from only one seven-layer packet. The discovery of a new mixed-layered compound indicates the possibility of the formation of similar compounds in AIV–BV–Te (AIV = Ge, Sn, Pb; BV = Sb, Bi) systems

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Wang, Ying, Chen Qiu, Chenhai Shen, Lin Li, Kaike Yang, Zhongming Wei, Hui-Xiong Deng, and Congxin Xia. "Band offset trends in IV–VI layered semiconductor heterojunctions." Journal of Physics: Condensed Matter 34, no. 19 (March 9, 2022): 195003. http://dx.doi.org/10.1088/1361-648x/ac5707.

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Abstract The band offsets between semiconductors are significantly associated with the optoelectronic characteristics and devices design. Here, we investigate the band offset trends of few-layer and bulk IV–VI semiconductors MX and MX2 (M = Ge, Sn; X = S, Se, Te). For common-cation (anion) systems, as the atomic number increases, the valence band offset of MX decreases, while that of MX2 has no distinct change, and the physical origin can be interpreted using band coupling mechanism and atomic potential trend. The band edges of GeX2 system straddle redox potentials of water, making them competitive candidates for photocatalyst. Moreover, layer number modulation can induce the band offset of GeSe/SnS and GeSe2/GeS2 heterojunction undergoing a transition from type I to type II, which makes them suitable for optoelectronic applications.

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50

Roederer, Ian U., John J. Cowan, Marco Pignatari, Timothy C. Beers, Elizabeth A. Den Hartog, Rana Ezzeddine, Anna Frebel, et al. "The R-Process Alliance: Abundance Universality among Some Elements at and between the First and Second R-Process Peaks*." Astrophysical Journal 936, no. 1 (September 1, 2022): 84. http://dx.doi.org/10.3847/1538-4357/ac85bc.

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Abstract We present new observational benchmarks of rapid neutron-capture process (r-process) nucleosynthesis for elements at and between the first (A ∼ 80) and second (A ∼ 130) peaks. Our analysis is based on archival ultraviolet and optical spectroscopy of eight metal-poor stars with Se (Z = 34) or Te (Z = 52) detections, whose r-process enhancement varies by more than a factor of 30 (−0.22 ≤ [Eu/Fe] ≤ +1.32). We calculate ratios among the abundances of Se, Sr through Mo (38 ≤ Z ≤ 42), and Te. These benchmarks may offer a new empirical alternative to the predicted solar system r-process residual pattern. The Te abundances in these stars correlate more closely with the lighter r-process elements than the heavier ones, contradicting and superseding previous findings. The small star-to-star dispersion among the abundances of Se, Sr, Y, Zr, Nb, Mo, and Te (≤0.13 dex, or 26%) matches that observed among the abundances of the lanthanides and third r-process-peak elements. The concept of r-process universality that is recognized among the lanthanide and third-peak elements in r-process-enhanced stars may also apply to Se, Sr, Y, Zr, Nb, Mo, and Te, provided the overall abundances of the lighter r-process elements are scaled independently of the heavier ones. The abundance behavior of the elements Ru through Sn (44 ≤ Z ≤ 50) requires further study. Our results suggest that at least one relatively common source in the early Universe produced a consistent abundance pattern among some elements spanning the first and second r-process peaks.

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