Journal articles on the topic 'Smat Power IC'

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1

Wong, King-Yuen, Wanjun Chen, Xiaosen Liu, Chunhua Zhou, and Kevin J. Chen. "GaN smart power IC technology." physica status solidi (b) 247, no. 7 (June 23, 2010): 1732–34. http://dx.doi.org/10.1002/pssb.200983453.

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2

Xu, H., H. J. Kim, H. Kim, and W. S. Chung. "Small signal modelling of Smart power IC." Electronics Letters 43, no. 21 (2007): 1142. http://dx.doi.org/10.1049/el:20071848.

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3

Petrosyants, Konstantin O., Igor A. Kharitonov, and Nikita I. Ryabov. "Electro-Thermal Design of Smart Power Devices and Integrated Circuits." Advanced Materials Research 918 (April 2014): 191–94. http://dx.doi.org/10.4028/www.scientific.net/amr.918.191.

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An efficient methodology of electro-thermal design of smart power semiconductor devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for 2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and high power elements, temperature sensors, IC chips simulation are considered.
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4

Floros, George, and Athanasios Tziouvaras. "Special Issue “Smart IC Design and Sensing Technologies”." Chips 1, no. 3 (October 20, 2022): 172–74. http://dx.doi.org/10.3390/chips1030011.

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Smart sensing technologies and their inherent data-processing techniques have drawn considerable research and industrial attention in recent years. Recent developments in nanometer CMOS technologies have shown great potential to deal with the increasing demand of processing power that arises in these sensing technologies, from IoT applications to complicated medical devices. Moreover, circuit implementation, which could be based on a full analog or digital approach or, in most cases, on a mixed-signal approach, possesses a fundamental role in exploiting the full capabilities of sensing technologies. In addition, all circuit design methodologies include the optimization of several performance metrics, such as low power, low cost, small area, and high throughput, which impose critical challenges in the field of sensor design. This Special Issue aims to highlight advances in the development, modeling, simulation, and implementation of integrated circuits for sensing technologies, from the component level to complete sensing systems.
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Ng, Wai Tung, Florin Udrea, Ichiro Omura, Jan Vobecky, and Don Disney. "Guest Editorial Special Issue on Power Semiconductor Devices and Smart Power IC Technologies." IEEE Transactions on Electron Devices 64, no. 3 (March 2017): 654–58. http://dx.doi.org/10.1109/ted.2017.2661578.

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6

Chan, Chi-Hang, Lin Cheng, Wei Deng, Peng Feng, Li Geng, Mo Huang, Haikun Jia, et al. "Trending IC design directions in 2022." Journal of Semiconductors 43, no. 7 (July 1, 2022): 071401. http://dx.doi.org/10.1088/1674-4926/43/7/071401.

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Abstract For the non-stop demands for a better and smarter society, the number of electronic devices keeps increasing exponentially; and the computation power, communication data rate, smart sensing capability and intelligence are always not enough. Hardware supports software, while the integrated circuit (IC) is the core of hardware. In this long review paper, we summarize and discuss recent trending IC design directions and challenges, and try to give the readers big/cool pictures on each selected small/hot topics. We divide the trends into the following six categories, namely, 1) machine learning and artificial intelligence (AI) chips, 2) communication ICs, 3) data converters, 4) power converters, 5) imagers and range sensors, 6) emerging directions. Hope you find this paper useful for your future research and works.
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7

Gleim, G., L. Bertolini, and F. Heizmann. "Combined smart power IC for VCR with PWM controlled motor voltage." IEEE Transactions on Consumer Electronics 40, no. 3 (1994): 377–86. http://dx.doi.org/10.1109/30.320818.

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8

Hai Xu, Hee-Jun Kim, and Hoon Kim. "A Direct Measurement Method of Frequency Responses of the Smart Power IC." IEEE Transactions on Instrumentation and Measurement 59, no. 3 (March 2010): 682–86. http://dx.doi.org/10.1109/tim.2009.2025985.

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9

Sankin, Igor, V. Bondarenko, Robin L. Kelley, and Jeff B. Casady. "SiC Smart Power JFET Technology for High-Temperature Applications." Materials Science Forum 527-529 (October 2006): 1207–10. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1207.

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Wide bandgap semiconductor materials such as SiC or GaN are very attractive for use in high-power, high-temperature, and/or radiation resistant electronics. Monolithic or hybrid integration of a power transistor and control circuitry in a single or multi-chip wide bandgap power semiconductor module is highly desirable for such applications in order to improve the efficiency and reliability. This paper describes a new monolithic SiC JFET IC technology for high-temperature smart power applications that allows for on-chip integration of control circuitry and normally-off power switch. In order to demonstrate the feasibility of this technology, hybrid logic gates with maximum switching frequency > 20 MHz and normally-off 900 V power switch have been fabricated on alumina substrates using discrete enhanced and depletion mode vertical trench JFETs.
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Zhang, Wei Jia, Jingshu Yu, Wen Tao Cui, Yahui Leng, Jingyuan Liang, Yuan-Ta Hsieh, Hann-Huei Tsai, Ying-Zong Juang, Wen-Kuan Yeh, and Wai Tung Ng. "A Smart Gate Driver IC for GaN Power HEMTs With Dynamic Ringing Suppression." IEEE Transactions on Power Electronics 36, no. 12 (December 2021): 14119–32. http://dx.doi.org/10.1109/tpel.2021.3089679.

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11

Kwan, Alex Man Ho, Yue Guan, Xiaosen Liu, and Kevin J. Chen. "A Highly Linear Integrated Temperature Sensor on a GaN Smart Power IC Platform." IEEE Transactions on Electron Devices 61, no. 8 (August 2014): 2970–76. http://dx.doi.org/10.1109/ted.2014.2327386.

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12

Zhang, Z., Y. Tsuchiya, O. Akiyama, and H. Konno. "An Ultra Low-Power MR*1) Sensor for a Smart Water Meter or a Smart Gas Meter." Key Engineering Materials 543 (March 2013): 418–21. http://dx.doi.org/10.4028/www.scientific.net/kem.543.418.

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A new ultra low power MR sensor comprising MR elements integrated with Bi-CMOS IC chip, which is optimal for the use in smart water meters and gas meters playing important role in global smart gridization, has been developed. MR elements are configured as a Wheatstone bridge circuit. MR element patterns are placed in the perpendicular configurations as resistive components of the circuit. Those detect the magnetic field applied to X and Y axis respectively, and then outputs either high or low-level electric signal. Optimization of the MR element pattern aspect ratio (ratio of the element length to the element width) and configuration of the two-row parallel MR patterns in a longitudinal direction enable the equivalent current flow in the direction. This provides mutual magnetostatic coupling and cancellation of each demagnetizing field, and led to achieve minimizing the hysteresis of the resistance change rate affected by up and down of the applied magnetic field. Furthermore, this led to the improvement of mutual symmetry for both S to N and N to S direction of the magnetic field. This resulted in enhanced magnetic sensitivity and successfully obtained magnetic sensitivity higher than 0.8kA/m. For the power supply of the MR sensor, external intermittent control was adopted. Furthermore, active (on) time of the MR element was considerably shortened by utilizing the internal circuit of the IC. As a result, the sampling time was shortened to 1μs and the drive current of MR sensor was reduced to 0.3 μA. *1)MR: Magneto-resistance
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13

Filios, Gabriel, Ioannis Katsidimas, Sotiris Nikoletseas, and Ioannis Tsenempis. "A Smart Energy Harvesting Platform for Wireless Sensor Network Applications." Information 10, no. 11 (November 6, 2019): 345. http://dx.doi.org/10.3390/info10110345.

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Advances in micro-electro-mechanical systems (MEMS) as well as the solutions for power scavenging can now provide feasible alternatives in a variety of applications. Wireless sensor networks (WSN), which operate on rechargeable batteries, could be based on a fresh basis which aims both at environmental power collection and wireless charging in various shapes and scales. Consequently, a potential illimitable energy supply can override the hypothesis of the limited energy budget (which can also impact the system’s efficiency). The presented platform is able to efficiently power a low power IoT system with processing, sensing and wireless transmission potentials. It incorporates a cutting-edge energy management IC that enables exceptional energy harvesting, applicable on low power and downsized energy generators. In contrast to other schemes, it supports not only a range of power supply alternatives, but also a compound energy depository system. The objective of this paper is to describe the design of the system, the integrated intelligence and the power autonomy performance.
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14

Parimalam, L., and R. Rajeswari. "Efficient Optimization and Placement using Enhanced GHB-IC Approach in Smart Power grid System." Asian Journal of Research in Social Sciences and Humanities 6, no. 10 (2016): 246. http://dx.doi.org/10.5958/2249-7315.2016.01011.x.

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15

Hardas, Mrs Vedanti, Sagar Ingole, Sahil Sheikh, and Sagar Kale. "Solar Panel Monitoring System Using IOT." International Journal for Research in Applied Science and Engineering Technology 10, no. 5 (May 31, 2022): 935–38. http://dx.doi.org/10.22214/ijraset.2022.42133.

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Abstract: The invention of the smart grid goes beyond the traditional notion of a one-way power supply. Developed countries have already begun to adopt smart meters, devices and renewable energy sources. Developing and countries still face power shortages on a daily basis. The integration of IoT and energy systems has revolutionized the world in terms of energy efficiency and real-time monitoring. This paper describes an experimental study of how IoT can power the current/ voltage and power generation of self-contained renewable energy sources. Solar modules can be monitored. This document also describes how to modify the tilt angle of the solar panel to improve the efficiency of the solar panel. Solar modules are monitored via a network system with NodeMCU, Atmega328 IC, Arduino. By carrying out the proposed work at a photovoltaic (PV) power plant, you can simplify the monitoring of solar panels. In addition, monitoring power generation can significantly improve the health of PV systems. Keywords: IoT based Solar Panel, Solar monitoring, NodeMCU,
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16

Wu, Yu Chi, Meng Jen Chen, Fu Hsiang Chi, Jin Yuan Lin, and Chao Shu Chang. "Digital Power Meter with Demand Control for Residential Energy Management." Advanced Materials Research 562-564 (August 2012): 1767–71. http://dx.doi.org/10.4028/www.scientific.net/amr.562-564.1767.

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In this paper, an energy-measurement-IC-based digital power meter is developed with demand control function for residential electrical energy management through wireless Zigbee and Internet. Several developed micro-controller-based modules are incorporated into this residential energy management system for demand control, such as infrared-controller module, infrared-learning module, and infrared-controlled switch module. This system can send the measured electricity utilization data through Wireless Sensor Network (WSN) and Internet to the remote server. The user can also control at any time the loads (appliances) at home through any computer or smart phone that is connected to the Internet.
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17

Zhu, R., V. Khemka, A. Bose, and T. Roggenbauer. "Substrate Majority Carrier-Induced NLDMOSFET Failure and Its Prevention in Advanced Smart Power IC Technologies." IEEE Transactions on Device and Materials Reliability 6, no. 3 (September 2006): 386–92. http://dx.doi.org/10.1109/tdmr.2006.882198.

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18

Jiang, Qimeng, Zhikai Tang, Chunhua Zhou, Shu Yang, and Kevin J. Chen. "Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform." IEEE Transactions on Electron Devices 61, no. 11 (November 2014): 3808–13. http://dx.doi.org/10.1109/ted.2014.2355834.

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19

Chu, Min, Jie Chen, Abidur Rahman, and Rajen Murugan. "Methodology to Quantify Impact of Package Delamination on Performance of High-Side Smart Power Switch Design." International Symposium on Microelectronics 2020, no. 1 (September 1, 2020): 000015–20. http://dx.doi.org/10.4071/2380-4505-2020.1.000015.

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Abstract Generally, IC packages with exposed pads have excellent thermal and electrical performance – assuming high fidelity and integrity of die attach material. However, reliability challenges associated with die attach impacts electrical performance of vertical power FETs for high-side power switches. As such, it is critical to quantify the impact of these challenges on high-side power switches operation, so that their protection and diagnostic feature circuitries can be properly designed for mission critical applications. In this paper we present on a package and PCB co-modeling methodology that was developed to assess impact of die attach integrity on performance of high-side power switch designs. We explain how electrical co-optimization of the system (viz. FET-Package-PCB) interactions, was achieved through a coupled circuit-to-electromagnetic modeling, simulation, and analysis methodology. Silicon laboratory measurements data that validate the modeling methodology will be presented.
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20

Bimbi, Cesare, Salvatore Pennisi, Salvatore Privitera, and Francesco Pulvirenti. "Single-Branch Wide-Swing-Cascode Subthreshold GaN Monolithic Voltage Reference." Electronics 11, no. 12 (June 9, 2022): 1840. http://dx.doi.org/10.3390/electronics11121840.

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A voltage reference generator in GaN IC technology for smart power applications is described, analyzed, and simulated. A straightforward design procedure is also highlighted. Compared to previous low-power monolithic solutions, the proposed one is based on a single branch and on transistors operating in a subthreshold. The circuit provides a nearly 2.7 V reference voltage under 4 V to 24 V supply at room temperature and with typical transistor models. The circuit exhibits a good robustness against large process variations and improves line regulation (0.105 %V) together with a reduction in area occupation (0.05 mm2), with a reduced current consumption of 2.7 µA (5 µA) in the typical (worst) case, independent of supply. The untrimmed temperature coefficient is 200 ppm/°C.
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21

Johan, Arief Prima, and Anom Yusuf. "Counterproductive work behavior, job stress, trait emotional intelligence and person organization fit among employees of leasing industry in Indonesia." Intangible Capital 18, no. 2 (July 11, 2022): 233. http://dx.doi.org/10.3926/ic.1318.

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Purpose: This study aims at comprehending counterproductive behavior from negative workplace situations, namely job stress. As job stress is an individual attitude, trait emotional intelligence (EI) was considered the determinant factor. In addition, the effect of person-organization (PO) fit was also scrutinized as a predictor of job stress.Design/methodology/approach: The study used quantitative surveys in the leasing industry of Indonesia. 88 valid responses were used in the analysis. The analysis was conducted using Structural Equation Modelling with the help of the Smart PLS. The variables were measured using robust indicators from previous studies.Findings: The results confirmed three meaningful relationships between counterproductive work behavior, job stress, trait EI and PO fit. Specifically, the analysis found a negative association between trait EI and job stress. It also revealed the negative effect of PO fit on job stress. However, the study failed to provide empirical evidence to support the relationship between job stress and counterproductive work behavior.Research Limitations: This study has low generalization power since it did not construct from large sample size. Future research efforts should consider adding alternative dimensions that could help to better understand and predict CWB.Practical and Social Implications: This study provides guidelines for practitioner to select and promote high EI candidates since they are proven to be less susceptible to stress. This study also suggests companies to align working atmosphere with employees’ characteristics. It also contributes to social interaction in the workplace by pointing companies to establish less stressfully work atmosphere.Originality/value: This study considers alternative procedures to measuring counterproductive work behavior compared to those used in previous studies. Additionally, this study includes both personal or individual characteristics and interaction between the person and the organization to predict job stress.
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22

Rasheed, Israa Mohammed, and Hassan Jasim Motlak. "Performance parameters optimization of CMOS analog signal processing circuits based on smart algorithms." Bulletin of Electrical Engineering and Informatics 12, no. 1 (February 1, 2023): 149–57. http://dx.doi.org/10.11591/eei.v12i1.4128.

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Designing ideal analogue circuits has become difficult due to extremely large-scale integration. The complementary metal oxide semiconductor (CMOS) analog integrated circuits (IC) could use an evolutionary method to figure out the size of each device. The CMOS operational transconductance amplifier (CMOS OTA) and the CMOS current conveyor second generation (CMOS CCII) are designed using advanced nanometer transistor technology (180 nm). Both CMOS OTA and CMOS CCII have high performance, such as a wide frequency, voltage gain, slew rate, and phase margin, to include very wide applications in signal processing, such as active filters and oscillators. The optimization approach is an iterative procedure that uses an optimization algorithm to change design variables until the optimal solution is identified. In this study, different sorts of algorithms the genetic algorithm (GA), particle swarm optimization (PSO), and cuckoo search (CS) are employed to boost and enhance the performance parameters. While decreasing the time required to develop a conventional operation amplifier's settling time. Some studies decrease the value of the power utilized at various frequencies. Others operate at extremely high frequencies, but their power consumption is greater than that of those operating at lower frequencies.
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23

Jia, Li-Fang, Lian Zhang, Jin-Ping Xiao, Zhe Cheng, De-Feng Lin, Yu-Jie Ai, Jin-Chao Zhao, and Yun Zhang. "E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology." Micromachines 12, no. 6 (May 27, 2021): 617. http://dx.doi.org/10.3390/mi12060617.

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AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical characters have been analyzed from room temperature (RT) to 200 °C. Small variations of the inverters are observed at different temperatures. The logic swing voltage of 2.91 V and 2.89 V are observed at RT and 200 °C at a supply voltage of 3 V. Correspondingly, low/high input noise margins of 0.78 V/1.67 V and 0.68 V/1.72 V are observed at RT and 200 °C. The inverters also demonstrate small rising edge time of the output signal. The results show great potential for GaN smart power integrated circuit (IC) application.
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Mohri, Kaneo, Tsuyoshi Uchiyama, Larissa V. Panina, Michiharu Yamamoto, and Kenichi Bushida. "Recent Advances of Amorphous Wire CMOS IC Magneto-Impedance Sensors: Innovative High-Performance Micromagnetic Sensor Chip." Journal of Sensors 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/718069.

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We analyzed and organized the reasons why the amorphous wire CMOS IC magneto-impedance sensor (MI sensor) has rapidly been mass-produced as the electronic compass chips for the smart phones, mobile phones, and the wrist watches. Comprehensive advantageous features regarding six terms of (1) microsizing and ultralow power consumption, (2) high linearity without any hysteresis for the magnetic field detection, (3) high sensitivity for magnetic field detection with a Pico-Tesla resolution, (4) quick response for detection of magnetic field, (5) high temperature stability, and (6) high reversibility against large disturbance magnetic field shock are based on the magneto-impedance effect in the amorphous wires. We have detected the biomagnetic field using the Pico-Tesla resolution MI sensor at the room temperature such as the magneto-cardiogram (MCG), the magneto-encephalogram (MEG), and the self-oscillatory magnetic field of guinea-pig stomach smooth muscles (in vitro) that suggest the origin of the biomagnetic field is probably pulsive flow of Ca2+through the muscle cell membrane.
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Nasrullah, Jawad, Zhiquan Luo, and Greg Taylor. "Designing Software Configurable Chips and SIPs using Chiplets and zGlue." International Symposium on Microelectronics 2019, no. 1 (October 1, 2019): 000027–32. http://dx.doi.org/10.4071/2380-4505-2019.1.000027.

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Abstract zGlue Smart Fabric, an active silicon interposer, enables rapid development of Systems in Package (SiPs) and Chips using chiplet stacking in a modular style and software programmability. zGlue Smart Fabric works with off-the-shelf chiplets in known good die and wafer level chip scale packages format without dictating a footprint constraint on chiplets. This is achieved by making a fine pitch copper pillar micro-bump array on the surface that can conform to the chiplet ball map using a programable connectivity and power array built into zGlue's fabric. Connection to RF and sensitive analog signals are handled in RDL. Programmability of zGlue bumps also enable some repair and reconfigurability after manufacturing. The design process with zGlue includes usage of a cloud-based software design tool called ChipBuilder. This tool performs most conventional SiP design functions but more importantly it is used for creating soft and hard routes among IOs. ChipBuilder starts with a data representation of zGlue's Smart Fabric. A growing library of chiplet data has been encoded into the tool and is made available to the users of ChipBuilder via the cloud. Users select chiplets, enter design, perform IO planning, and route the design. With this modular IC design style, zGlue can handle high mix devices that are expected with the growth of connected smart devices everywhere.
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26

Zhang, Fan. "Development of a Smart Cabinet Lock Based on Finger Vein Technology." Scientific and Social Research 4, no. 2 (February 17, 2022): 111–26. http://dx.doi.org/10.26689/ssr.v4i2.3648.

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In response to the requirements for the security and recognition accuracy of cabinet locks in communications, electric power, energy, chemical, IDC computer rooms, daily homes, and other occasions, a smart cabinet lock with multiple door-opening methods based on finger vein biometric technology is developed. The main method to unlock the cabinet is via finger vein unlocking; that is, the identification and verification of information by analyzing the pattern of the veins on the finger, and the achievement of identity verification and identification through biological detection. At the same time, it supports IC or ID card unlocking and mechanical manual unlocking. In order to simplify the overall structure, the internal mechanical structures of the aforementioned three unlocking methods are simplified into one. Its design focuses on the hybrid mechanical transmission structure and the finger vein module as well as utilizes the functions of each module. The principle is divided into blocks. Through processing and purchasing, the smart cabinet lock device is assembled, and its initial functional requirements are tested with physical objects. From the test results, it can be appreciated that the structural size, unlocking method, and two-way unlocking function of the smart cabinet lock meet the requirements, and its recognition accuracy is high, with good security and certain practical application prospects.
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Yang, Chih Kuang. "System on film type substrates: processes, structure and real modules." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000031–34. http://dx.doi.org/10.4071/isom-2015-tp16.

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2 real modules made by film type substrate are introduced in this article. For the first example module, a micro-processing module included 1 GHz microprocessor, LPDDR SDRAM/NAND flash combo memory and power management IC are packaged in one single module by using a 6-layer film type substrate. With small size (20×17 mm) and functions for HD resolution video and multimedia, this module has been used in smart watches and multimedia devices. The substrate in the first module has 2000 IOs and 6 layers with only 70um thickness. For the second example module, a low power microprocessor and a Bluetooth 4.0 dual mode chip are packaged in one module by using 4-layer film type substrate. With tiny size (9.5×7.3mm) and the function for managing sensors and low power wireless communication, this module has been used in various IoT devices. In this article, the process of the film type substrate and the assembly process of the modules are also shown and discussed. We disclose the novel packaging structure as called system on film (SoFi). Our system on film (SoFi) is a packaging platform by using our film type substrate. As previous examples showed, system on film (SoFi) can miniaturize high performance modules and be applied in IoT devices very well.
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Jia, Zhou, Tong Ge, Linfei Guo, Ng Pei Jian Eileen, Huiqiao He, and Joseph Chang. "A High Power Driver IC for Electroluminescent Panel: Design Challenges and Advantages of using the Emerging LEES-SMART GaN-on-CMOS process." Procedia Engineering 141 (2016): 91–93. http://dx.doi.org/10.1016/j.proeng.2015.09.227.

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29

Bryzek, Janusz. "MEMS Tornado to Challenge Next Generation Packaging." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (January 1, 2012): 000417–56. http://dx.doi.org/10.4071/2012dpc-keynote_mems_fairchildsemi.

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In the last decade multiple MEMS devices entered Tornado (avalanche sales growth), adopting along the way the IC packaging technologies with a “twist”. Consumer applications for MEMS devices exploded, with sensor shipments increasing from 10M units in 2007 to over 2B units in 2011. This explosion resulted from Steve Jobs vision converting a cell phone into a powerful computer. Computing power enabled creative user interfaces, such as touch sensitive screens and auto landscape-portrait rotation, opening a Tornado for MEMS. As more complex MEMS devices are finding its way to cell phones, they will be creating packaging challenges. An emergence of even a bigger forthcoming Tornado is surfacing.History shows that all major technologies coming to market enabled advancement of world-changing productivity and balance of power. At a recent conference, a VP of Maxim Integrated Products stated that we have entered the 3rd technical revolution which will free humans for creative work through a fusion of computing, communication and sensing. This will enable MEMS component market to catch up with the semiconductor market ($300B).At the 2010 MEMS Technology Summit conference at Stanford University, Bosch presented a vision for 7 trillion devices driven by Sensory Swarms connected to the Internet to serve 7 billion people in 2017 (in 2010 there were already 5 billion mobile phone subscribers). This vision translates to 1,000 sensors per average person in 2017. We are already seeing high end applications supported by large number of MEMS sensors in advanced cars, smart homes, smart phones and medical diagnostics, to mention a few.In 2010 HP outlined a vision for CeNSE, a Central Nervous System for the Earth, which expected to deploy a trillion nano sensors and actuators. Processing the sensor information will require increasing the size of Internet 1,000 times; creating huge demand for computing and generating by 2013 a $70B global market for sensing systems, and $290B market for value added sensing services. As device volumes start approaching a trillion units a year, packaging challenges will be created by:Complexity of emerging MEMS devices. The required “twists” to IC packaging will be in the areas such as low package stress, chemical and fluidic media compatibility, optical performance, etc.Cost pressure. Due to a sheer size of expected market, packaging industry may expect very large changes. Addressing these challenges will likely have a big impact on the packaging industry.
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Biswas, Tathagato. "Spy Robot." International Journal for Research in Applied Science and Engineering Technology 10, no. 6 (June 30, 2022): 4265–69. http://dx.doi.org/10.22214/ijraset.2022.44887.

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Abstract: Nowadays, the technological and digital world is developing very fast. Everything is getting smart, so we are talking about the technological world the devices like home appliances and other things are getting control by mobile applications, and this only happens by the device Arduino Uno / raspberry pi3 and many others. Still, in our research we have used Arduino Uno to create a Wi-Fi controlled car with camera-top on it to monitor everything in its surrounding, we have seen many similar projects which using Arduino to makes things easy to use and its saving time and energy too. Automation is used for operating an electronic device such as the remote control car, home lighting system, and other useful things or reduced human invention. This report proposes a design and implementation of a remote. controlled camera car by Wi-Fi technology mobile devices. In this analysis work, radio code and hardware technologies area unit used, like the wireless module of ESP8266 for (transmitter and receiver), Arduino Uno as microcontroller, associate H-bridge L293D IC for motor controller and 2 electrical DC motors are used to move the car, & a Camera attached on the top of the vehicle.
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Et. al., Srilakshmi Kaza,. "Performance Analysis of Adiabatic Vedic Multipliers." Turkish Journal of Computer and Mathematics Education (TURCOMAT) 12, no. 5 (April 11, 2021): 1429–35. http://dx.doi.org/10.17762/turcomat.v12i5.2039.

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Energy dissipation and reliability are the two important design constraints in the high performance processor design. With the advancements in the IC manufacturing and reduced feature sizes the energy dissipation increases in exponential manner at the lower technology nodes. So, there is a need to design energy-efficient and reliable circuits and systems. The reliability with temperature is also one of the major challenges in today’s smart systems as they are operated in harsh environments. Most of the works till date analyzed the reliability with respect to DC constraints. The basic operation in the high performance Digital Signal Processing (DSP) is the multiplication is used to simplify various operations like convolution, filtering and correlation. In this work, a Vedic multiplier with 4x4 size is implemented with FinFET based energy recovery Modified PFAL (MPFAL) logic at 45 nm technology node. The designed multiplier performance is analyzed and compared with our earlier work in terms of energy dissipation and delay. The results indicate a reduction of 55% in energy dissipation over ECRL based Vedic multiplier. Linear variation of power dissipation with temperature in the order of pW shows that design MPFAL Vedic muliplier is more reliable compared to CMOS multiplier.
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32

Yin, Mulin. "Research on Behavior Monitoring of Elderly Living Alone Based on Wearable Devices and Sensing Technology." International Journal of Antennas and Propagation 2021 (October 15, 2021): 1–10. http://dx.doi.org/10.1155/2021/4200137.

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Human behavior recognition and status monitoring are current research hotspots, especially in the fields of medical monitoring, smart home, and elderly care. With the development of sensor technology, low-power IC chips, and wireless body sensors, miniature sensor networks can be popularized and applied in daily life. Since the energy consumption of sensor networks is a bottleneck problem that limits its development, this paper designs a multimodal collaborative sensing method for the application scenarios of elderly people living alone to reduce energy consumption in the process of daily behavior perception of the elderly. This method subdivides behavior perception into behavior recognition and status monitoring, determines the optimal sensor combination for identifying monitoring different behaviors based on information theory, and then uses a behavior recognition model modeled by a multiclassifier and a status model modeled by a plurality of two classifiers that are used to perceive user behavior. A large number of experimental results show that compared with the traditional sensor network method, our proposed solution can achieve effective sensing while reducing the energy consumption in the process of data transmission and model calculation, thereby prolonging the working life of the sensing network and realizing long-term and reliable daily behavior perception.
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33

Hanifi, Gulhabib, and Noor Mohammad Azizi. "Study of the Strategy of Energy Harvester Pattern Besides the Influence Preparing Journey." Integrated Journal for Research in Arts and Humanities 3, no. 1 (January 26, 2023): 89–95. http://dx.doi.org/10.55544/ijrah.3.1.15.

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Energy gathering is beautiful capability of inspection currently subsequently the whole creation is observing aimed on green energy in technique of a foundation. This everyday defines the method of energy harvester beautification similarly the effect preparing journey. The optimization of extracted effect available of the piezoelectric piece has been available. The gathering of electrical energy next different delivery is practical arranged the strategies composed general the grounding of conservative strain previously ambient pounding depends upon countless properties such concluded technique of amount of piezoelectric transducers, electromechanical connection continuous of the piezoelectric sensors, amount of volume applied, and likewise obvious the scheme of preparation. Energy harvester pounded glass consumes been intended with certain inferior quality piezoelectric diaphragms which continue secondhand predominant indications. A working method consumes been available immediate confinement the generated energy through dedicated IC and boosts it finished a converter near become regulated output aimed at charging the batteries of smart phones. The whole charge cycle has been studied aimed at the developed system. The simulation and experimental educations have been efficiently carried out. The model design and testing remained innocently aimed at studying the energy generation besides apprehending phenomenon in an effective manner. It can be implemented immediate generate large power through suitably as the several factors mentioned above and applying it happening the great scale.
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34

Wei, Yifan, Yuan Yao, Kang Pang, Chaojie Xu, Xuebing Han, Languang Lu, Yalun Li, et al. "A Comprehensive Study of Degradation Characteristics and Mechanisms of Commercial Li(NiMnCo)O2 EV Batteries under Vehicle-To-Grid (V2G) Services." Batteries 8, no. 10 (October 17, 2022): 188. http://dx.doi.org/10.3390/batteries8100188.

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Lithium-ion batteries on electric vehicles have been increasingly deployed for the enhancement of grid reliability and integration of renewable energy, while users are concerned about extra battery degradation caused by vehicle-to-grid (V2G) operations. This paper details a multi-year cycling study of commercial 24 Ah pouch batteries with Li(NiMnCo)O2 (NCM) cathode, varying the average state of charge (SOC), depth of discharge (DOD), and charging rate by 33 groups of experiment matrix. Based on the reduced freedom voltage parameter reconstruction (RF-VPR), a more efficient non-intrusive diagnosis is combined with incremental capacity (IC) analysis to evaluate the aging mechanisms including loss of lithium-ion inventory and loss of active material on the cathode and anode. By analyzing the evolution of indicator parameters and the cumulative degradation function (CDF) of the battery capacity, a non-linear degradation model with calendar and cyclic aging is established to evaluate the battery aging cost under different unmanaged charging (V0G) and V2G scenarios. The result shows that, although the extra energy throughput would cause cyclic degradation, discharging from SOC 90 to 65% by V2G will surprisingly alleviate the battery decaying by 0.95% compared to the EV charged within 90–100% SOC, due to the improvement of calendar life. By optimal charging strategies, the connection to the smart grid can potentially extend the EV battery life beyond the scenarios without V2G.
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35

Galang Yudha Murih Raharja and Padjar Setyobudi. "RANCANG BANGUN SISTEM KEAMANAN SEPEDA MOTOR MENGGUNAKAN RFID DAN PERSONAL IDENTIFICATION NUMBER (PIN) BERBASIS MIKROKONTROLER ATMEGA16." Elkom : Jurnal Elektronika dan Komputer 12, no. 1 (July 16, 2019): 6–12. http://dx.doi.org/10.51903/elkom.v12i1.104.

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The increase in motorized vehicles in urban areas is followed by an increase in cases of motorcycle theft due to the lack of public awareness about the motorcycle security system. The intensity of motorcycle theft with its disclosure is still far in comparison. Crime will also increase, such as cases of theft of motor vehicles, especially motorbikes. Cases of motorcycle theft still often occur, this happens because there is still a lack of security systems contained in motorized vehicles that only use ignition. the existence of an alternative safety system is needed because the average key of a conventional motorcycle is easily penetrated by thieves. A double motorcycle safety device (Doble Smart Lock) composed of an RFID and Personal Identification Number (PIN) and an ATMega microcontroller. This system serves to provide two-stage security. The first stage is a microcontroller in the form of a PIN and the second stage is an RFID system. If the first stage breaks then it will enter the second stage, namely the RFID system The results in the form of a main tool for motorcycle management consists of: Power supply, RFID Card, RFID Reader, Personal Identification Number (PIN), IC / Microcontroller ATMega and already running. The system testing process shows the number 3 in the expert validation test and the number 3 in the expert validation trial. Based on the above calculation, it can be concluded that the validation results from the expert show that the value of 3 is between 2 - 3, which is classified in the valid category. The system process shows the number 3 in the expert validation and the number 2.9 in the validation trial of the user. Based on the above calculation, it can be concluded that the validation results from the user point to a value of 2.9 between 2 - 3 which is classified in the valid category.
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36

"Power Semiconductor Devices and Smart Power IC Technologies." IEEE Journal of Photovoltaics 6, no. 3 (May 2016): 791. http://dx.doi.org/10.1109/jphotov.2016.2551080.

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"Power Semiconductor Devices and Smart Power IC Technologies." IEEE Journal of Photovoltaics 6, no. 4 (July 2016): 1055. http://dx.doi.org/10.1109/jphotov.2016.2579378.

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38

"Power Semiconductor Devices and Smart Power IC Technologies." IEEE Journal of Photovoltaics 6, no. 5 (September 2016): 1391. http://dx.doi.org/10.1109/jphotov.2016.2598291.

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39

"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Journal of the Electron Devices Society 4, no. 3 (May 2016): 168. http://dx.doi.org/10.1109/jeds.2016.2545959.

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40

"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Journal of the Electron Devices Society 4, no. 4 (July 2016): 198. http://dx.doi.org/10.1109/jeds.2016.2578502.

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41

"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Journal of the Electron Devices Society 4, no. 5 (September 2016): 374. http://dx.doi.org/10.1109/jeds.2016.2594098.

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42

"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Electron Devices 63, no. 5 (May 2016): 2227. http://dx.doi.org/10.1109/ted.2016.2546844.

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43

"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Electron Devices 63, no. 6 (June 2016): 2631. http://dx.doi.org/10.1109/ted.2016.2566699.

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44

"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Electron Devices 63, no. 7 (July 2016): 2981. http://dx.doi.org/10.1109/ted.2016.2574400.

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45

"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Electron Devices 63, no. 8 (August 2016): 3365. http://dx.doi.org/10.1109/ted.2016.2586906.

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46

"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Electron Devices 63, no. 9 (September 2016): 3813. http://dx.doi.org/10.1109/ted.2016.2598234.

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47

"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Semiconductor Manufacturing 29, no. 2 (May 2016): 176. http://dx.doi.org/10.1109/tsm.2016.2545898.

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48

"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Semiconductor Manufacturing 29, no. 3 (August 2016): 270. http://dx.doi.org/10.1109/tsm.2016.2594153.

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49

"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Electron Device Letters 37, no. 5 (May 2016): 693. http://dx.doi.org/10.1109/led.2016.2553799.

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50

"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Electron Device Letters 37, no. 6 (June 2016): 816. http://dx.doi.org/10.1109/led.2016.2564558.

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