Journal articles on the topic 'Single electron devices'
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Oda, Shunri. "Single Electron Devices." IEEJ Transactions on Electronics, Information and Systems 121, no. 1 (2001): 19–22. http://dx.doi.org/10.1541/ieejeiss1987.121.1_19.
Full textSMITH, DORAN D. "SINGLE ELECTRON DEVICES." International Journal of High Speed Electronics and Systems 09, no. 01 (March 1998): 165–207. http://dx.doi.org/10.1142/s0129156498000099.
Full textAhmed, Haroon, and Kazuo Nakazato. "Single-electron devices." Microelectronic Engineering 32, no. 1-4 (September 1996): 297–315. http://dx.doi.org/10.1016/0167-9317(95)00179-4.
Full textTAKAHASHI, YASUO, AKIRA FUJIWARA, MASAO NAGASE, HIDEO NAMATSU, KENJI KURIHARA, KAZUMI IWADATE, and KATSUMI MURASE. "Silicon single-electron devices." International Journal of Electronics 86, no. 5 (May 1999): 605–39. http://dx.doi.org/10.1080/002072199133283.
Full textTakahashi, Yasuo, Yukinori Ono, Akira Fujiwara, and Hiroshi Inokawa. "Silicon single-electron devices." Journal of Physics: Condensed Matter 14, no. 39 (September 20, 2002): R995—R1033. http://dx.doi.org/10.1088/0953-8984/14/39/201.
Full textFLENSBERG, KARSTEN, ARKADI A. ODINTSOV, FEIKE LIEFRINK, and PAUL TEUNISSEN. "TOWARDS SINGLE-ELECTRON METROLOGY." International Journal of Modern Physics B 13, no. 21n22 (September 10, 1999): 2651–87. http://dx.doi.org/10.1142/s0217979299002587.
Full textLi, Rui-Hao, Jun-Yang Liu, and Wen-Jing Hong. "Regulation strategies based on quantum interference in electrical transport of single-molecule devices." Acta Physica Sinica 71, no. 6 (2022): 067303. http://dx.doi.org/10.7498/aps.71.20211819.
Full textLabra-Muñoz, Jacqueline A., Arie de Reuver, Friso Koeleman, Martina Huber, and Herre S. J. van der Zant. "Ferritin-Based Single-Electron Devices." Biomolecules 12, no. 5 (May 15, 2022): 705. http://dx.doi.org/10.3390/biom12050705.
Full textSchupp, Felix J. "Single-electron devices in silicon." Materials Science and Technology 33, no. 8 (October 18, 2016): 944–62. http://dx.doi.org/10.1080/02670836.2016.1242826.
Full textAbramov, I. I., and E. G. Novik. "Classification of single-electron devices." Semiconductors 33, no. 11 (November 1999): 1254–59. http://dx.doi.org/10.1134/1.1187860.
Full textMizuta, H., Y. Furuta, T. Kamiya, Y. T. Tan, Z. A. K. Durrani, S. Amakawa, K. Nakazato, and H. Ahmed. "Nanosilicon for single-electron devices." Current Applied Physics 4, no. 2-4 (April 2004): 98–101. http://dx.doi.org/10.1016/j.cap.2003.10.005.
Full textFujiwara, A., Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase. "Double-island single-electron devices. A useful unit device for single-electron logic LSI's." IEEE Transactions on Electron Devices 46, no. 5 (May 1999): 954–59. http://dx.doi.org/10.1109/16.760403.
Full textLikharev, Konstantin K., and Alexander N. Korotkov. "Single-Electron Parametron." VLSI Design 6, no. 1-4 (January 1, 1998): 43–46. http://dx.doi.org/10.1155/1998/58268.
Full textMatsutani, Masahiro, Fujio Wakaya, Sadao Takaoka, Kazuo Murase, and Kenji Gamo. "Electron-Beam-Induced Oxidation for Single-Electron Devices." Japanese Journal of Applied Physics 36, Part 1, No. 12B (December 30, 1997): 7782–85. http://dx.doi.org/10.1143/jjap.36.7782.
Full textGunasekaran, Suman, Douglas A. Reed, Daniel W. Paley, Amymarie K. Bartholomew, Latha Venkataraman, Michael L. Steigerwald, Xavier Roy, and Colin Nuckolls. "Single-Electron Currents in Designer Single-Cluster Devices." Journal of the American Chemical Society 142, no. 35 (August 18, 2020): 14924–32. http://dx.doi.org/10.1021/jacs.0c04970.
Full textAhmed, H. "Single atom scale lithography for single electron devices." Physica B: Condensed Matter 227, no. 1-4 (September 1996): 259–63. http://dx.doi.org/10.1016/0921-4526(96)00415-2.
Full textGoodnick, S. M., and J. Bird. "Quantum-effect and single-electron devices." IEEE Transactions On Nanotechnology 2, no. 4 (December 2003): 368–85. http://dx.doi.org/10.1109/tnano.2003.820773.
Full textMizugaki, Y., M. Takiguchi, S. Hayami, A. Kawai, M. Moriya, K. Usami, T. Kobayashi, and H. Shimada. "Single-Electron Devices With Input Discretizer." IEEE Transactions on Nanotechnology 7, no. 5 (September 2008): 601–6. http://dx.doi.org/10.1109/tnano.2008.2003352.
Full textLikharev, K. K. "Single-electron devices and their applications." Proceedings of the IEEE 87, no. 4 (April 1999): 606–32. http://dx.doi.org/10.1109/5.752518.
Full textKOROTKOV, ALEXANDER N. "Single-electron logic and memory devices." International Journal of Electronics 86, no. 5 (May 1999): 511–47. http://dx.doi.org/10.1080/002072199133256.
Full textOno, Yukinori, Kenji Yamazaki, Masao Nagase, Seiji Horiguchi, Kenji Shiraishi, and Yasuo Takahashi. "Single-electron and quantum SOI devices." Microelectronic Engineering 59, no. 1-4 (November 2001): 435–42. http://dx.doi.org/10.1016/s0167-9317(01)00638-4.
Full textTakahashi, Yasuo, Yukinori Ono, Akira Fujiwara, and Hiroshi Inokawa. "Development of silicon single-electron devices." Physica E: Low-dimensional Systems and Nanostructures 19, no. 1-2 (July 2003): 95–101. http://dx.doi.org/10.1016/s1386-9477(03)00314-x.
Full textKorotkov, Alexander N., and Konstantin K. Likharev. "Single-electron-parametron-based logic devices." Journal of Applied Physics 84, no. 11 (December 1998): 6114–26. http://dx.doi.org/10.1063/1.368926.
Full textDempsey, Kari J., David Ciudad, and Christopher H. Marrows. "Single electron spintronics." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1948 (August 13, 2011): 3150–74. http://dx.doi.org/10.1098/rsta.2011.0105.
Full textBryant, Garnett W., D. B. Murray, and A. H. MacDonald. "Electronic structure of single ultrasmall electron devices and device arrays." Superlattices and Microstructures 3, no. 3 (January 1987): 211–15. http://dx.doi.org/10.1016/0749-6036(87)90060-7.
Full textBarnes, C. H. W., J. M. Shilton, and A. M. Robinson. "Quantum computation using electrons trapped by surface acoustic waves." Quantum Information and Computation 1, Special (December 2001): 96–101. http://dx.doi.org/10.26421/qic1.s-9.
Full textLi, Xinxing, Jinggao Sui, and Jingyue Fang. "Single-Electron Transport and Detection of Graphene Quantum Dots." Nanomaterials 13, no. 5 (February 27, 2023): 889. http://dx.doi.org/10.3390/nano13050889.
Full textYadav, Pooja, Hemant Arora, and Arup Samanta. "Nitrogen in silicon for room temperature single-electron tunneling devices." Applied Physics Letters 122, no. 8 (February 20, 2023): 083502. http://dx.doi.org/10.1063/5.0136182.
Full textVisscher, E. H., S. M. Verbrugh, J. Lindeman, P. Hadley, and J. E. Mooij. "Fabrication of multilayer single‐electron tunneling devices." Applied Physics Letters 66, no. 3 (January 16, 1995): 305–7. http://dx.doi.org/10.1063/1.113526.
Full textVion, D., P. F. Orfila, P. Joyez, D. Esteve, and M. H. Devoret. "Miniature electrical filters for single electron devices." Journal of Applied Physics 77, no. 6 (March 15, 1995): 2519–24. http://dx.doi.org/10.1063/1.358781.
Full textGarcía, N., and F. Guinea. "Nonequilibrium electronic distribution in single-electron devices." Physical Review B 57, no. 3 (January 15, 1998): 1398–401. http://dx.doi.org/10.1103/physrevb.57.1398.
Full textNagase, M., S. Horiguchi, K. Shiraishi, A. Fujiwara, and Y. Takahashi. "Single-electron devices formed by thermal oxidation." Journal of Electroanalytical Chemistry 559 (November 2003): 19–23. http://dx.doi.org/10.1016/s0022-0728(03)00420-0.
Full textAltmeyer, S., K. Hofmann, A. Hamidi, S. Hu, B. Spangenberg, and H. Kurz. "Potential and challenges of single electron devices." Vacuum 51, no. 2 (October 1998): 295–99. http://dx.doi.org/10.1016/s0042-207x(98)00178-x.
Full textSplettstoesser, Janine, and Rolf J. Haug. "Single-electron control in solid state devices." physica status solidi (b) 254, no. 3 (March 2017): 1770217. http://dx.doi.org/10.1002/pssb.201770217.
Full textMelnyk, Oleksandr, and Viktoriia Kozarevych. "SIMULATION OF PROGRAMMABLE SINGLE-ELECTRON NANOCIRCUITS." Bulletin of the National Technical University "KhPI". Series: Mathematical modeling in engineering and technologies, no. 1 (March 5, 2021): 64–68. http://dx.doi.org/10.20998/2222-0631.2020.01.05.
Full textTANIGUCHI, KENJI. "Frontier of Nanometer Devices. Electronic Devices Using Single Electron Tunneling Phenomena." Journal of the Institute of Electrical Engineers of Japan 114, no. 6 (1994): 371–75. http://dx.doi.org/10.1541/ieejjournal.114.371.
Full textLikharev, Konstantin K., and Alexander N. Korotkov. "Analysis of Q0-Independent Single-Electron Systems." VLSI Design 6, no. 1-4 (January 1, 1998): 341–44. http://dx.doi.org/10.1155/1998/46535.
Full textStewart, M., and Neil Zimmerman. "Stability of Single Electron Devices: Charge Offset Drift." Applied Sciences 6, no. 7 (June 29, 2016): 187. http://dx.doi.org/10.3390/app6070187.
Full textSato, Shigeo, and Koji Nakajima. "Application of Single Electron Devices Utilizing Stochastic Dynamics." International Journal of Nanotechnology and Molecular Computation 1, no. 2 (April 2009): 29–42. http://dx.doi.org/10.4018/jnmc.2009040102.
Full textMahdavi, Mojdeh, Sattar Mirzakuchaki, Mohammad Naser Moghaddasi, and Mohammad Amin Amiri. "Single Electron Fault Modeling in Basic Quantum Devices." Japanese Journal of Applied Physics 50, no. 9R (September 1, 2011): 094401. http://dx.doi.org/10.7567/jjap.50.094401.
Full textAllec, N., R. G. Knobel, and L. Shang. "SEMSIM: Adaptive Multiscale Simulation For Single-Electron Devices." IEEE Transactions on Nanotechnology 7, no. 3 (May 2008): 351–54. http://dx.doi.org/10.1109/tnano.2008.917794.
Full textHoekstra, Jaap. "On Circuit Theories for Single-Electron Tunneling Devices." IEEE Transactions on Circuits and Systems I: Regular Papers 54, no. 11 (November 2007): 2353–59. http://dx.doi.org/10.1109/tcsi.2007.907797.
Full textEscott, C. C., F. E. Hudson, V. C. Chan, K. D. Petersson, R. G. Clark, and A. S. Dzurak. "Scaling of ion implanted Si:P single electron devices." Nanotechnology 18, no. 23 (May 8, 2007): 235401. http://dx.doi.org/10.1088/0957-4484/18/23/235401.
Full textMahdavi, Mojdeh, Sattar Mirzakuchaki, Mohammad Naser Moghaddasi, and Mohammad Amin Amiri. "Single Electron Fault Modeling in Basic Quantum Devices." Japanese Journal of Applied Physics 50, no. 9 (September 20, 2011): 094401. http://dx.doi.org/10.1143/jjap.50.094401.
Full textBułka, B. R., J. Martinek, G. Michałek, and J. Barnaś. "Shot noise in ferromagnetic single-electron tunneling devices." Physical Review B 60, no. 17 (November 1, 1999): 12246–55. http://dx.doi.org/10.1103/physrevb.60.12246.
Full textDelsing, P., and D. B. Haviland. "A current mirror based on single electron devices." Applied Superconductivity 6, no. 10-12 (October 1999): 789–93. http://dx.doi.org/10.1016/s0964-1807(99)00043-5.
Full textFerry, D. K., M. Khoury, C. Gerousis, M. J. Rack, A. Gunther, and S. M. Goodnick. "Single-electron charging effects in Si MOS devices." Physica E: Low-dimensional Systems and Nanostructures 9, no. 1 (January 2001): 69–75. http://dx.doi.org/10.1016/s1386-9477(00)00179-x.
Full textGroshev, Atanas. "Nontrival Coulomb staircase in single-electron turnstile devices." Physical Review B 46, no. 16 (October 15, 1992): 10289–94. http://dx.doi.org/10.1103/physrevb.46.10289.
Full textHoekstra, J. "On the delay of single-electron logic devices." International Journal of Circuit Theory and Applications 41, no. 6 (March 28, 2012): 563–72. http://dx.doi.org/10.1002/cta.1802.
Full textYamada, Takashi, and Yoshihito Amemiya. "Multiple-valued logic devices using single-electron circuits." Superlattices and Microstructures 27, no. 5-6 (May 2000): 607–11. http://dx.doi.org/10.1006/spmi.2000.0875.
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