Relevant bibliographies by topics / Single Crystalline Oxides

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Single Crystalline Oxides'

Author: Grafiati
Published: 7 September 2023

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Journal articles on the topic "Single Crystalline Oxides"

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Kim, Shin-Ik, Hyung-Jin Choi, Gwangyeob Lee, et al. "3D architectures of single-crystalline complex oxides." Materials Horizons 7, no. 6 (2020): 1552–57. http://dx.doi.org/10.1039/d0mh00292e.

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We proposed 3D architectures of complex oxides as a way to derive novel properties: various 3D shapes were formed by self-shaped free-standing membranes, and curvature-induced polarization in an otherwise nonpolar material was observed.
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Peng, Bin, Ren-Ci Peng, Yong-Qiang Zhang, et al. "Phase transition enhanced superior elasticity in freestanding single-crystalline multiferroic BiFeO3 membranes." Science Advances 6, no. 34 (2020): eaba5847. http://dx.doi.org/10.1126/sciadv.aba5847.

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The integration of ferroic oxide thin films into advanced flexible electronics will bring multifunctionality beyond organic and metallic materials. However, it is challenging to achieve high flexibility in single-crystalline ferroic oxides that is considerable to organic or metallic materials. Here, we demonstrate the superior flexibility of freestanding single-crystalline BiFeO3 membranes, which are typical multiferroic materials with multifunctionality. They can endure cyclic 180° folding and have good recoverability, with the maximum bending strain up to 5.42% during in situ bending under scanning electron microscopy, far beyond their bulk counterparts. Such superior elasticity mainly originates from reversible rhombohedral-tetragonal phase transition, as revealed by phase-field simulations. This study suggests a general fundamental mechanism for a variety of ferroic oxides to achieve high flexibility and to work as smart materials in flexible electronics.
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Glätzle, Matthias, Gregor J. Hoerder, and Hubert Huppertz. "RE2B8O15 (RE = La, Pr, Nd) – syntheses of three new rare earth borates isotypic to Ce2B8O15." Zeitschrift für Naturforschung B 71, no. 5 (2016): 535–42. http://dx.doi.org/10.1515/znb-2016-0027.

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AbstractThe rare earth borates RE2B8O15 (RE = La, Pr, Nd) were synthesized in a Walker-type multianvil apparatus under conditions of 5.5 GPa and 1100 °C. Starting from the corresponding rare earth oxides and boron oxide, the syntheses yielded crystalline products of all new compounds that allowed crystal structure analyses based on single-crystal X-ray diffraction data for La2B8O15 and Nd2B8O15. The compound Pr2B8O15 could be characterized via X-ray powder diffractometry. The results show that the new compounds crystallize isotypically to Ce2B8O15 in the monoclinic space group P2/c. The infrared spectra of RE2B8O15 (RE = La, Pr, Nd) have also been studied.
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Yeom, Eun Joo, Seong Sik Shin, Woon Seok Yang, et al. "Controllable synthesis of single crystalline Sn-based oxides and their application in perovskite solar cells." Journal of Materials Chemistry A 5, no. 1 (2017): 79–86. http://dx.doi.org/10.1039/c6ta08565b.

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Popescu, Madalina, Roxana Piticescu, Eugeniu Vasile, et al. "The Influence of Synthesis Parameters on FeO(OH) / Fe2O3 Formation by Hydrothermal Techniques." Zeitschrift für Naturforschung B 65, no. 8 (2010): 1024–32. http://dx.doi.org/10.1515/znb-2010-0808.

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In this paper, a hydrothermal method of high-pressure and low-temperature synthesis conditions is presented as a simple single-step technique to obtain crystalline nanoparticles of iron oxides. The aim of this work has been to demonstrate the influence of the main synthesis parameters on the formation of nanosized Fe2O3 particles using statistical methods and to establish the most significant effects. Based on mathematical pre-modeling calculations, the best reaction conditions for the hydrothermal process have been chosen, and controlled crystalline nanostructures of iron oxides could be prepared
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Liu, Qing, Youwei Yan, Xiangcheng Chu, Yiling Zhang, Lihong Xue, and Wuxing Zhang. "Graphene-induced growth of single crystalline Sb2MoO6sheets and their sodium storage performance." J. Mater. Chem. A 5, no. 40 (2017): 21328–33. http://dx.doi.org/10.1039/c7ta07111f.

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Pure and single crystalline Sb<sub>2</sub>MoO<sub>6</sub>sheets can be hydrothermally synthesizedviathe induction of graphene oxides, and the Sb<sub>2</sub>MoO<sub>6</sub>/RGO composite exhibits excellent cyclability and rate performance as the anode in a sodium ion battery.
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Chayasombat, Bralee, N. Tarumi, T. Kato, Tsukasa Hirayama, Katsuhiro Sasaki, and Kotaro Kuroda. "Transmission Electron Microscopy Studies of Oxidation of Single Crystal Silicon Carbide at High Temperature." Materials Science Forum 561-565 (October 2007): 2135–38. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.2135.

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The microstructures of high-temperature oxide scales on the Si-terminated surface and C-terminated surface of 6H-SiC were investigated by transmission electron microscopy (TEM). We found that mechanical polishing caused surface strains, about 100 nm in depth, on both sides of specimens. Mechanically polished specimens were oxidized at 1473 K for 20 h in air. Oxide scales of about 250 nm in thickness were formed on the Si-terminated surface and of about 400 nm on the C-terminated surface. Since the strain regions caused by mechanical polishing were oxidized, strains were no longer observed. As a result, this oxidation condition effectively removed the strains. The oxide scales were identified as amorphous silica on the Si-terminated face, while crystalline oxides and amorphous silica were observed on the C-terminated face.
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QIAN, H. X., W. ZHOU, and H. Y. ZHENG. "RIPPLE FORMATION ON InP SURFACE IRRADIATED WITH FEMTOSECOND LASER." International Journal of Nanoscience 04, no. 04 (2005): 779–84. http://dx.doi.org/10.1142/s0219581x0500370x.

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Single crystalline InP was ablated with linearly p-polarized femtosecond laser in air. Ripples with orientation parallel to the laser polarization direction were formed at low laser fluence. Analyses by EDX reveal In oxides and P oxides on the surface. Micro Raman spectroscopy of the laser irradiated surface indicates presence of stresses and possible formation of InP nanocrystals due to the femtosecond laser irradiation.
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Fomenko, V. S. "Electronic work function of sintered and single-crystalline high-temperature superconducting oxides." Powder Metallurgy and Metal Ceramics 32, no. 2 (1993): 178–81. http://dx.doi.org/10.1007/bf00560050.

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Uhrmacher, Michael, and Klaus-Peter Lieb. "Phase Transitions in Oxides Studied by Perturbed Angular Correlation Spectroscopy." Zeitschrift für Naturforschung A 55, no. 1-2 (2000): 90–104. http://dx.doi.org/10.1515/zna-2000-1-217.

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Radioactive atoms located on cation sites in oxide matrices can be used to monitor phase transitions by measuring the electric or magnetic hyperfine interactions by means of Perturbed Angular Correlations spectroscopy. The article illustrates three types of phase transitions studied with 111In tracers and their daughter nuclei 111Cd, namely magnetic, structural and REDOX phase transitions in binary and ternary polycrystalline or single-crystalline oxides. In this context, we also discuss the question of identifying the probes' lattice site(s), the scaling of the Electric Field Gradients in oxides, the influence of the (impurity) probes themselves on the phase transitions, and the occurrence and mechanisms of dynamic interactions. Recent results on 111In in pure and Li-doped In2S3 will also be presented.
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Dissertations / Theses on the topic "Single Crystalline Oxides"

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Kokkaliaris, Stylianos. "Investigation of the vortex phase diagram and dynamics in single crystalline samples of the high temperature superconductor YBa←2Cu←3O←7←-←#delta#." Thesis, University of Southampton, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.310294.

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Roso, Casares Sergio. "Synthesis and gas sensing properties of single crystalline metal-oxide nanostructures." Doctoral thesis, Universitat Rovira i Virgili, 2017. http://hdl.handle.net/10803/402468.

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A la present tesis doctoral, s'han produït diferents tipus de nanoestructures basades en òxids metàl·lics, com per exemple nanofils de ZnO i octaedros d'In2O3, utilitzant el mètode de Deposició Química de Vapor (CVD) a altes temperatures. Per a la detecció d'òxid de nitrogen, s'ha descobert que la resposta dels nanofils d'ZnO està directament relacionada amb la quantitat de defectes presents en el material. Com més gran es el nombre de defectes, major és la resposta al diòxid de nitrogen. Tanmateix, per a la detecció d'etanol, la mostra que contenia un nombre mig de defectes, va ser la que dóna millors resultats. Pel que fa als octaedres de In2O3, podem dir que els octaedres d'In2O3 pur són excel·lents candidats per a la detecció de NO2, ja que tenen una excel·lent sensibilitat (0.43 ppb-1) a baixes temperatures (130ºC), mentres que la resposta a altres gasos com H2 és dos ordres de magnituds inferior en les mateixes condicions. A més a més, en presencia d'humitat, s'incrementa la sensibilitat a NO2 i, a la vegada, es redueix la sensibilitat a H2, pel que la selectivitat a NO2 també es veu incrementada. Finalment, utilitzant l'espectroscopia DRIFT, s'ha analitzat l'In2O3 expost a 1 ppm de NO2 a diferents temperatures i s'ha descobert que el mecanisme proposat per a descriure el procés de sensat es bastant més complicat del que s'ha reportat fins ara. Com a resultat de tots aquests experiments, s'ha donat un pas edanvant en l'explicació dels mecanismes de sensat dels nanofils d'ZnO i els octaedres de In2O3 a diferents temperatures.<br>En la presente tesis doctoral, se han producido diferentes tipos de nanoestructuras basadas en oxidos metalicos, como por ejemplo nanohilos de ZnO y ocaedros de In2O3, utilizando el método de Deposición Química de Vapor (CVD) a altas temperaturas. Para la detección de dióxido de nitrógeno, se ha descubierto que la respuesta de los nanohilos de ZnO está directamente correlacionada con la cantidad total de defectos presentes en el material. Cuanto mayor es el número de defectos, mayor es la respuesta al dióxido de nitrógeno. Sin embargo, para la detección de etanol, la muestra que contenía un número medio de defectos fue la que dio mejores resultados. Por lo que respecta a los octaedros de In2O3, podemos decir que los octaedros de In2O3 puro son excelentes candidatos para la detección de NO2, ya que poseen una excelente sensibilidad (0.43 ppb-1) a bajas temperaturas (130ºC), mientras que la respuesta a otros gases como H2 es dos órdenes de magnitud inferior en las mismas condiciones. Además, en presencia de humedad, se incrementa la sensibilidad a NO2 y, a la vez, se reduce la sensibilidad a H2, por lo que la selectividad hacia NO2 tambien se ve incrementada. Finalmente, utilizando la espectroscopia DRIFT, se ha analizado el In2O3 expuesto a 1 ppm de NO2 a diferentes temperaturas y se ha descubierto que el mecanismo propuesto para describir el proceso de senado es bastante más complicado que lo que se ha publicado hasta ahora. Como resultado de todos estos experimentos, se ha arrojado luz nueva sobre los mecanismos de sensado de los nanohilos de ZnO y los octahedros de In2O3 a diferentes temperaturas.<br>In the present doctoral thesis, several metal oxide nanostructures such as ZnO nanowires and In2O3 octahedra via a chemical vapour deposition (CVD) method at high temperatures. For the detection of nitrogen dioxide, it was found that the response of ZnO nanowires was directly correlated to the overall amount of defects of the material. The higher the number of defects is, the higher the response to nitrogen dioxide is. On the other hand, for the detection of ethanol, ZnO nanowires with an intermediate number of defects in which surface defects were dominant led to the best results. Additionally, regarding the In2O3 octahedra, we can say that pure In2O3 octahedra are excellent for detecting NO2 gas with an outstanding sensitivity (0.43 ppb-1) at low temperatures (130ºC), while the response to H2 remains two orders of magnitude lower under the same conditions. In addition, the presence of humidity increases the sensitivity to NO2 and, at the same time, reduces the response to H2, which results in an increased selectivity. Finally, by making use of the DRIFT spectroscopy, we have analyzed In2O3 material towards 1 ppm of NO2 at different temperatures and, it has been found that the mechanism proposed for the gas sensing is far more complicated than previously reported. As a result of these experiments, new light on the sensing mechanism of ZnO and In2O3 material towards NO2 gas at different temperatures has been shed.
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Pooley, Kathryn Jessica. "Patterned Aqueous Growth of Single Crystalline Zinc Oxide for Photonic Applications." Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:17467362.

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Typically a top-down approach is used in the fabrication of functional nanodevices beginning with the bulk material and imposing a two or three-dimensional structure on the material through a combination of lithography and etching. Pre-patterning of a substrate, resulting in the selective growth of a material, has potential for forming three-dimensional device structures in ways that can be more efficient and which can avoid process complexity and process induced damage. In this thesis, the low temperature (90°C) aqueous growth of complex, single crystalline zinc oxide (ZnO) three-dimensional devices through pre-patterned micron and nanometer sized molds is presented. This work focuses on the quality of the single crystalline ZnO material, the constrained growth of ZnO through various sizes and shapes of molds, and the fabrication of several device structures including pillars, rings, and photonic crystals. Due to their single crystalline nature and crystallographically smooth sidewalls, photonic devices created using this growth method have the potential to outperform traditionally fabricated structures in a range of optoelectronic applications. In addition, metal-oxide interfaces are the critical components of many electrical and optical devices, and it is rare to find epitaxial metal-oxide structures. In this work, the first demonstration of low temperature, epitaxial growth of ZnO on single crystalline gold plates is presented. The quality and structure of the ZnO on the gold plates is investigated using scanning electron microscopy, atomic force microscopy, and photoluminescence spectroscopy. The epitaxial growth is confirmed using electron backscatter diffraction and transmission electron microscopy. The metal-oxide interfaces fabricated have the potential to be used in a number of technologically important applications. Possible examples include creating high quality electrical contacts on high bandgap materials and improving light extraction from planar LED structures.<br>Engineering and Applied Sciences - Applied Physics
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Asif, Ali [Verfasser], and Joachim [Akademischer Betreuer] Burghartz. "Laterally diffused metal oxide semiconductor transistors on ultra-thin single-crystalline silicon / Ali Asif. Betreuer: Joachim Burghartz." Stuttgart : Universitätsbibliothek der Universität Stuttgart, 2011. http://d-nb.info/1016459262/34.

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Kim, Junseok. "Improved Properties of Poly (Lactic Acid) with Incorporation of Carbon Hybrid Nanostructure." Thesis, Virginia Tech, 2016. http://hdl.handle.net/10919/81415.

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Poly(lactic acid) is biodegradable polymer derived from renewable resources and non-toxic, which has become most interested polymer to substitute petroleum-based polymer. However, it has low glass transition temperature and poor gas barrier properties to restrict the application on hot contents packaging and long-term food packaging. The objectives of this research are: (a) to reduce coagulation of graphene oxide/single-walled carbon nanotube (GOCNT) nanocomposite in poly(lactic acid) matrix and (b) to improve mechanical strength and oxygen barrier property, which extend the application of poly(lactic acid). Graphene oxide has been found to have relatively even dispersion in poly(lactic acid) matrix while its own coagulation has become significant draw back for properties of nanocomposite such as gas barrier, mechanical properties and thermo stability as well as crystallinity. Here, single-walled carbon nanotube was hybrid with graphene oxide to reduce irreversible coagulation by preventing van der Waals of graphene oxide. Mass ratio of graphene oxide and carbon nanotube was determined as 3:1 at presenting greatest performance of preventing coagulation. Four different weight percentage of GOCNT nanocomposite, which are 0.05, 0.2, 0.3 and 0.4 weight percent, were composited with poly(lactic acid) by solution blending method. FESEM morphology determined minor coagulation of GOCNT nanocomopsite for different weight percentage composites. Insignificant crystallinity change was observed in DSC and XRD data. At 0.4 weight percent, it prevented most of UV-B light but was least transparent. GOCNT nanocomposite weight percent was linearly related to ultimate tensile strength of nanocomposite film. The greatest ultimate tensile strength was found at 0.4 weight percent which is 175% stronger than neat poly(lactic acid) film. Oxygen barrier property was improved as GOCNT weight percent increased. 66.57% of oxygen transmission rate was reduced at 0.4 weight percent compared to neat poly(lactic acid). The enhanced oxygen barrier property was ascribed to the outstanding impermeability of hybrid structure GOCNT as well as the strong interfacial adhesion of GOCNT and poly(lactic acid) rather than change of crystallinity. Such a small amount of GOCNT nanocomposite improved mechanical strength and oxygen barrier property while there were no significant change of crystallinity and thermal behavior found.<br>Master of Science
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Fanchon, Eric. "Etude structurale de conducteurs ioniques unidimensionnels de type hollandite." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37604938h.

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Hung, Wei-Jie, and 洪偉傑. "Fabrication of Transparent Conductive Oxides for Single-Crystalline n-type Silicon Hetero-Junction Solar Cells." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/50732695248536570600.

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碩士<br>華梵大學<br>機電工程學系博碩專班<br>98<br>This paper is aimed to improve the efficiencies of silicon solar cell using semiconductor fabrication technologies. The research first adopts n-type (100) silicon wafers as substrates, and applies KOH etching in the photolithography process to form inverted pyramid structures. The density of the inverse pyramid structures is varied to investigate its impact factor on the reflectivity for the solar cells. In addition, the paper performs high-density plasma chemical vapor deposition to fabricate amorphous silicon thin films. Then, the author can study solar cells performances with single crystal / hydrogenised amorphous silicon heterojunctions, the effects of p-type amorphous silicon films deposited over p-type single crystal films, as well as the influences from p-type amorphous silicon layers and intrinsic layers. Also, the research executes ion implantation to fabricate BSF layers, which are intended to decrease the carrier recombination rate within the interfacing regions, and to improve the minority carrier collection rates. Furthermore, this research employes RF sputtering system to fabricate AZO transparent conductive thin films, and then learns the effects of adjusted processing parameters to the electrical and optical film properties. In the end, hydrogen plasma is used to perform the film post-processing, and the conductive films are then utilized as solar cell electrodes. After using a semiconductor parameter analyzer to perform a series of experimental measurements, the obtained IV curves suggest that the prototyped solar cells can obtain an open circuit voltage Voc = 0.60V, a short circuit current Jsc = 30mA/cm2, a fill factor FF of 62.08%, and an actual efficiency is about 11.13%.
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Chen, Peng-Yu, and 陳鵬宇. "Aluminum oxide layer prepared by plasma oxidation on single-crystalline aluminum film." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/q3e939.

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碩士<br>國立交通大學<br>電子研究所<br>105<br>In this thesis¸ the plasma oxidation on single-crystalline Aluminum is presented. The dependence of oxidation rates on the N2O flux, the substrate temperature, the RF power, and the chamber pressure is studied with Auger Electron Spectroscopy (AES) , Transmission Electron Microscope (TEM) and Atomic Force Microscope (AFM). The dependence of oxide thickness and oxidation time is plotted, and also compared to the mathematic model in thermal oxidation. In this thesis, the Al2O3 is applied to gate oxide in GaAs MOSFET. The I-V characteristic of MOSFET is studied, and the interface quality is checked by X-ray Photoelectron Spectroscopy (XPS). Our work provides another way to prepare a smooth nano-scale Al2O3 film on aluminum, and we are hoping that this fabrication process of plasma oxidation will be improved in future.
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Lin, Yu-Jing, and 林妤靜. "Analysis on Compound Slurry with Graphene Oxide for Chemical Mechanical Polishing of Single Crystalline Silicon Carbide Wafer." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/f2ym7b.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>107<br>Single Crystalline Silicon Carbide (SiC) Wafer has high and wide voltage, high breakdown voltage, and high thermal conductivity properties in high power devices. However, it has a very high Mohs hardness 9.2 and brittle substrate, which is a time-consuming process in the traditional chemical mechanical polishing (CMP). A 30 minutes dipping test was performed on 4H-SiC with different base slurry, and 0.1 wt% GO powder add in C -face produce COOH and C-O-OH bonds, while Si-face had no obvious reaction by Raman spectroscopy. This study aims to improve the process time by Compound-Slurry Chemical Mechanical Polishing (CSCMP) add 0.1 wt% graphene oxide (GO) and Gas Liquid Assisted Chemical Mechanical Polishing (GLA-CMP). The process contains OH and COOH bonding to form a soft passivation layer on 4H-SiC wafer surface in the slurry. Four kinds of polishing processes for C-face and Si-face of SiC wafer with the same parameters. It can achieve the best material removal rate (MRR) is 1289.91 nm/ h on C-face and the best MRR is 267.72 nm/h on Si-face by the HS+GLACMP process. Comparision of CMP and CS+GLACMP, it reduces 60.6% processing time on C-face and reduce 39.5 % processing time on Si-face after single side lapping and reduce processing time.
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Chen, Qiu-Feng, and 陳秋峰. "Modelings and characterizations of thermal oxide films grown on single crystalline/ polycrystalline silicon and their applications in FLOTOX EEPROM device design." Thesis, 1986. http://ndltd.ncl.edu.tw/handle/97724946981133596561.

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Book chapters on the topic "Single Crystalline Oxides"

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Mihama, K., and N. Tanaka. "Nm-sized crystallites embedded in single crystalline films of magnesium oxide." In Small Particles and Inorganic Clusters. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74913-1_36.

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Kasar, Chetan, Ulhas Sonawane, Prasantha Mudimela, Jean-Francois Colomer, and D. S. Patil. "Single Crystalline Films of Zinc Oxide for Nanorod Applications." In Physics of Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_199.

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Yamada, Yasuji, Junichi Kawashima, Yusuke Niiori, Tamaki Masegi, and Izumi Hirabayashi. "Liquid Phase Epitaxy of YBCO on Single-Crystalline Oxide Fibers for Power Application." In Advances in Superconductivity IX. Springer Japan, 1997. http://dx.doi.org/10.1007/978-4-431-68473-2_1.

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Orlandi, M. O., P. H. Suman, R. A. Silva, and E. P. S. Arlindo. "Carbothermal Reduction Synthesis: An Alternative Approach to Obtain Single-Crystalline Metal Oxide Nanostructures." In Recent Advances in Complex Functional Materials. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-53898-3_2.

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Kawaguchi, Kenichi, Iwao Tago, and Masao Nakao. "Distribution of Pinning Energies in Oxide Superconducting Thin Films and Single-Crystalline Powders." In Advances in Superconductivity III. Springer Japan, 1991. http://dx.doi.org/10.1007/978-4-431-68141-0_108.

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Hasegawa, Masato, Yutaka Yoshida, Yoshiaki Ito, et al. "Preparation of YBa2Cu3O7-δ -Coated Conductor on Single Crystalline Oxide Fiber by Hot-Wall MOCVD." In Advances in Superconductivity X. Springer Japan, 1998. http://dx.doi.org/10.1007/978-4-431-66879-4_146.

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Bogomol, Iurii, and Petro Loboda. "Directionally Solidified Ceramic Eutectics for High-Temperature Applications." In MAX Phases and Ultra-High Temperature Ceramics for Extreme Environments. IGI Global, 2013. http://dx.doi.org/10.4018/978-1-4666-4066-5.ch010.

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The processing techniques, microstructures, and mechanical properties of directionally solidified eutectic ceramics are reviewed. It is considered the main methods for preparing of eutectic ceramics and the relationships between thermal gradient, growth rate, and microstructure parameters. Some principles of coupled eutectic growth, main types of eutectic microstructure and the relationship between the eutectic microstructure and the mechanical properties of directionally solidified eutectics at ambient and high temperatures are briefly described. The mechanical behavior and main toughening mechanisms of these materials in a wide temperature range are discussed. It is shown that the strength at high temperatures mainly depends on the plasticity of the phase components. By analyzing the dislocation structure, the occurrence of strain hardening in single crystalline phases during high-temperature deformation is revealed. The creep resistance of eutectic composites is superior to that of the sintered samples due to the absence of glassy phases at the interfaces, and the strain has to be accommodated by plastic deformation within the domains rather than by interfacial sliding. The microstructural and chemical stability of the directionally solidified eutectic ceramics at high temperatures are discussed. The aligned eutectic microstructures show limited phase coarsening up to the eutectic point and excellent chemical resistance. Directionally solidified eutectics, especially oxides, revealed an excellent oxidation resistance at elevated temperatures. It is shown sufficient potential of these materials for high-temperature applications.
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Dispinar, Derya. "Melt Quality Assessment." In Encyclopedia of Aluminum and Its Alloys. CRC Press, 2019. http://dx.doi.org/10.1201/9781351045636-120052503.

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It is well known that the reaction of liquid aluminum with the moisture in the environment results in two products: aluminum oxide and hydrogen gas that dissolves in aluminum. Both of these products are considered to be detrimental to the properties of aluminum alloys. Therefore, test equipment has been developed to check the levels of these defects in the melt. Many of these involve expensive and consumable tools. In addition, an experienced personnel may be required to interpret the results. Nonetheless, aluminum oxide is harmless as long as it remains on the surface. The problem begins when this oxide is entrained into the liquid aluminum such as turbulence during transfer or mold filling in a non-optimized design. This can only happen by folding of the oxide. During this action, rough surface of the oxides comes in contact to form no bonds. These defects are known as bifilms that have certain characteristics. First, they act as cracks in the cast parts since they are oxides. It is important to note that aluminum oxide has thin amorphous oxide (known as young oxides) and thick crystalline oxide (γ-Al2O3) that may be formed in a casting operation. Second, almost zero force is required to open these bifilms due to the unbonded folded oxide skins. Thus, these defects can easily form porosity by unravelling during solidification shrinkage. On the other hand, the formation of porosity by hydrogen is practically impossible. Theoretically, hydrogen has high solubility in the liquid but it has significantly low solubility in solid aluminum. Thus, it is suspected that hydrogen is rejected from the solidification front to form hydrogen gas and porosity. However, the hydrogen atom has the smallest atomic radii and high diffusibility. Therefore, segregation of hydrogen in front of the growing solid is difficult. In addition, the energy required for hydrogen atoms to segregate and form hydrogen gas molecule is around 30,000 atm. Under these conditions, porosity formation by hydrogen is not likely to be achieved. Hydrogen probably stays in a supersaturated state or diffuses homogeneously through the cast part. The effect of hydrogen can only be seen when it can diffuse into the unbonded gap between the bifilms to open them up to aid the unravelling of bifilms to form porosity. This phenomenon can be easily detected by a very simple test called reduced pressure test. When a sample is solidified under vacuum, the bifilms start to open up. Since all porosity is formed by bifilms, the cross section of the sample solidified under vacuum can be analyzed by means of image analysis software. The sum of maximum length of pores can be measured as an indication of melt quality. Since bifilms are the most detrimental defects, this value is called “bifilm index” given in millimetres, which makes this test the only test that can quantify aluminum melt quality in such detail including both the effects of bifilms and hydrogen together. Several Al-Si alloys were used at various conditions: degassing with lance, ceramic diffusers, and graphite rotary has been compared. Gravity sand casting, die casting, and low-pressure die casting methods were evaluated. The effect of grain refiners and modifiers was studied. And the evolution of the bifilm index has been presented.
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Choudhary, Sumitra, Vikas Sharma, Abhishek Sharma, Ajay Kumar, and Parveen Kumar. "Analyzing the Properties of Zinc Oxide (ZnO) Thin Film Grown on Silicon (Si) Substrate, ZnO/Si Using RF Magnetron Sputtering Approach." In Modeling, Characterization, and Processing of Smart Materials. IGI Global, 2023. http://dx.doi.org/10.4018/978-1-6684-9224-6.ch014.

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In this work, ZnO single layer thin film of 100 nm is deposited on a Si substrate using RF magnetron sputtering. Base pressure of 1.0×10−5 mbar, RF power of 100W at Ar flow 15 sccm and room temperature were process parameters. The average crystallite size of ZnO layer, deposited on Si substrate, using Scherrer's formula was 108.16 nm. XRD verifies the crystalline nature of ZnO with various peaks at (002), (101) and (103) planes. Using AFM technique, ZnO had an Average Surface Roughness (Ra) of 2.75 nm and RMS roughness (Rq) of 3.70 nm. From Hall measurements at room temperature, the authors determined that ZnO is a n-type semiconductor having a resistivity of 1 to 100 Ωcm. The layer's sheet resistance was 7.05×103 Ω/sq, and its resistivity was 7.05×10−2 Ωcm. The Raman spectra analysis confirmed the presence of Raman active modes in the sample, confirming the existence of certain vibrational modes. In PL spectra, an emission peak was observed at 380.30 nm, which closely resembled pure ZnO. These results collectively shows that the ZnO/Si thin films grown on Si demonstrated excellent quality.
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Ariyanti, Dessy, Aprilina Purbasari, Dina Lesdantina, Filicia Wicaksana, and Wei Gao. "Modified TiO2 Nanomaterials as Photocatalysts for Environmental Applications." In Food Sustainability, Environmental Awareness, and Adaptation and Mitigation Strategies for Developing Countries. IGI Global, 2023. http://dx.doi.org/10.4018/978-1-6684-5629-3.ch006.

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Since the water splitting breakthrough using semiconductor reported in 1972, titanium dioxide (TiO2) has been extensively investigated as a promising material used in broad range of research areas. TiO2 is a transition metal oxide semiconductor with three distinct polymorph crystalline structures. With that alone TiO2 established remarkable performance as photocatalyst for organic photodegradation in the irradiation of UV. However, improvement on the light absorption properties that support the excellent photocatalytic activity still needs to be pursued for wider environmental application. In this book chapter, the limitations of TiO2 as photocatalyst were discussed especially in the industrial wastewater treatment application. The strategies in overcoming the limitation by TiO2 morphology and surface modification were also presented. The modified TiO2 nanomaterials proves to have excellent photocatalytic activity in dyes (Rhodamine B, Methyl Orange and Methylene Blue) as representative of organic pollutant degradation and Cu (II) reduction as representative of inorganic pollutant.
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Conference papers on the topic "Single Crystalline Oxides"

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Aloy, A. S., R. A. Soshnikov, D. B. Lopukh, et al. "Vitrification of DOE Simulated Radioactive Waste by Induction-Heated Cold-Crucible Melter Technology." In ASME 2003 9th International Conference on Radioactive Waste Management and Environmental Remediation. ASMEDC, 2003. http://dx.doi.org/10.1115/icem2003-4907.

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Certain waste streams of the US DOE contain radioactive refractory oxides and other components like aluminum zirconium and chromium, which present difficulties during their processing and immobilization. The vitrification of such waste in joule-heated melters at high waste loading is possible only at a temperature exceeding 1150°C. The Khlopin Radium Institute (St.-Petersburg, Russia) jointly with the US Department of Energy has performed a feasibility study on the suitability of the Cold-Crucible Induction Heated Melter (CCIM) technology for the single-stage solidification of a surrogate sludge (C-106/AY-102 HLW Simulant), similar in composition to the High Level Waste (HLW) found at DOE’s Hanford Site (Richland, USA). During the experiments, slurry of simulated sludge and glass formers was metered directly to the CCIM, melted, and the glass product was poured from the melter. The melts were conducted at a mean melt temperature of 1350°C. The experiments produced borosilicate glass wasteforms with a waste oxide loading of 70 weight percent. According to the X-Ray diffraction analysis, the final product had a glass-crystalline structure. The crystalline phase was represented by spinel, (Fe,Mn)Fe2O4, uniformly distributed over the wasteform. The chemical durability of the samples was tested by the Product Consistency Test (PCT), and was considered durable according to the DOE specifications for HLW. In the course of the experiments, data were accumulated on the specific electric power consumption and the throughput of the facility.
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Hershberger, Jeff, Oyelayo O. Ajayi, Cinta Lorenzo-Martin, Jules L. Routbort, and George R. Fenske. "X-Ray Diagnostics for Scuffing: Application to Phase Transformation in Nickel." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63904.

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Through the use of X-ray diffraction (XRD) and other diagnostics, the fundamental physical mechanisms of scuffing are becoming better understood. Peak broadening in the XRD pattern has been analyzed to determine the dislocation structure and crystallite size. Evidence from this technique has led us to conclude that scuffing is an example of adiabatic shear instability, wherein work hardening is exceeded by the thermal softening caused by the work. We are extending this research through scuff testing and XRD of nonferrous materials. For example, members of our team have recently found frictional behavior and surface morphologies consistent with scuffing in single crystals of MgO. Previous work has suggested the use of scuffing as a general method for the formation of metastable phases. Phase identification information available from the XRD data indicated the formation of austenite in scuffed SAE4340 steel, and the present work reports the discovery of a tribologically formed metastable phase in nickel. The formation of this phase was associated with surface roughening and a rapid friction increase of approximately 50%. However, the morphology of the roughened surface indicated abrasion rather than the gross plasticity typical of scuffed surfaces. X-ray diffraction identified the phase as either nickel carbide (Ni3C) or hexagonal nickel, which are similar in structure, and ruled out the presence of crystalline nickel oxides. Analysis of peak widths revealed that the dislocation density in the areas that experienced a higher friction coefficient was lower than that in low-friction areas. This finding is not consistent with dislocation density changes in scuffed steel.
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Bilski, P., A. Twardak, Y. Zorenko, et al. "TSL properties of A2SiO5 and A2SiO5:Ce (A=Y, Lu) single crystals and single crystalline films." In 2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE, 2012. http://dx.doi.org/10.1109/omee.2012.6464740.

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Comini, Elisabetta, Camilla Baratto, Guido Faglia, Matteo Ferroni, Alberto Vomiero, and Giorgio Sberveglieri. "Highly sensitive single crystalline metal oxide nanowires gas sensors." In 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. IEEE, 2006. http://dx.doi.org/10.1109/commad.2006.4429946.

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Zorenko, Yu, V. Gorbenko, T. Zorenko, et al. "Growth and luminescent properties of (Tb,Gd)3Al5O12:Ce single crystalline films." In 2014 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE, 2014. http://dx.doi.org/10.1109/omee.2014.6912383.

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Zorenko, Yu, V. Gorbenko, T. Zorenko, V. Savchyn, and A. Voloshinovskii. "Luminescent and scintillation properties of CaWO4 and CaWO4:Bi single crystalline films." In 2014 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE, 2014. http://dx.doi.org/10.1109/omee.2014.6912438.

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Zorenko, Yu, V. Gorbenko, T. Zorenko, et al. "Scintillating screens based on the single crystalline films of orthosilicates and multicomponent garnets." In 2014 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE, 2014. http://dx.doi.org/10.1109/omee.2014.6912432.

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Llobet, E., E. Navarrete, F. E. Annanouch, et al. "Single-Crystalline Metal Oxide, Resistive Gas Sensors Advances and Perspectives." In 2018 IEEE Sensors. IEEE, 2018. http://dx.doi.org/10.1109/icsens.2018.8589734.

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Yang, Yefeng, Yizheng Jin, Zhizhen Ye, Yao Tu, and Qinglmg Wang. "Synthesis and characterization of ultrathin single-crystalline cerium oxide nanorods." In 2010 IEEE 3rd International Nanoelectronics Conference (INEC). IEEE, 2010. http://dx.doi.org/10.1109/inec.2010.5425007.

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Budak, S., G. Miao, and A. Gupta. "Growth of CrO2 coated single crystalline (SnO2) tin oxide nanowires." In IEEE Southeastcon 2009 (SOUTHEASTCON). IEEE, 2009. http://dx.doi.org/10.1109/secon.2009.5174081.

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