Relevant bibliographies by topics / Single Crystal Thin Film Growth

Academic literature on the topic 'Single Crystal Thin Film Growth'

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Published: 7 September 2023

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Journal articles on the topic "Single Crystal Thin Film Growth"

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Seifert, A., A. Vojta, J. S. Speck, and F. F. Lange. "Microstructural instability in single-crystal thin films." Journal of Materials Research 11, no. 6 (June 1996): 1470–82. http://dx.doi.org/10.1557/jmr.1996.0183.

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Epitaxial PbTiO3 thin films were produced from a mixed Pb–Ti double-alkoxide precursor by spin-coating onto single crystal (001) SrTiO3 substrates. Heat treatment at 800 °C produces a dense and continuous, epitaxial lead titanate film through an intermediate Pb-Ti fluorite structure. A microstructural instability occurred when very thin single crystal films were fabricated; this instability caused the films to become discontinuous. Scanning electron microscopy and atomic force microscopy observations show that single crystal films with a thickness less than ∼80 nm developed holes that expose the substrate; thinner films broke up into isolated, single crystal islands. The walls of the holes were found to be (111) perovskite planes. A free energy function, which considered the anisotropic surface energies of different planes, was developed to describe the microstructural changes in the film and to understand the instability phenomenon. The function predicted that pre-existing holes greater than a critical size are necessary to initiate hole growth, and it predicted the observed morphological changes in the current system. Morphological stability diagrams that explain the stability fields for different film configurations, i.e., either completely covered, with holes, or single crystal islands, can be calculated for any film/substrate system.
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Cai, Chuanbing, and Hiroyuki Fujimoto. "Effects of Nd123/MgO Thin Film and MgO Single-crystal Seeds in Isothermal Solidification of YBaCuO/Ag." Journal of Materials Research 15, no. 8 (August 2000): 1742–48. http://dx.doi.org/10.1557/jmr.2000.0251.

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The seeding effects of (001) Nd123/MgO thin films and MgO single crystals were studied in isothermal solidification of YBa2Cu3Oy composite with the additions of 40 mol% Y2BaCuO5, 10 wt% Ag, and 0.5 wt% Pt. Seeding with the Nd123/MgO thin film resulted in single-domain growth of Y123 crystal with a stable growth along the “100”?direction, while seeding with MgO single crystal produced multidomain growth in which the dominant growth facet is rotated 45° about (100) plane of MgO. Multidomain growth in MgO seeded sample was suppressed by decreasing undercooling degree. The effects of undercooling degree and seed size on multidomain growth are discussed in view of classical nucleation and growth theory.
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Ichikawa, Yoko, Toshiyuki Matsunaga, Mohsen Hassan, Isaku Kanno, Takaaki Suzuki, and Kiyotaka Wasa. "Growth and structure of heteroepitaxial lead titanate thin films constrained by miscut strontium titanate substrates." Journal of Materials Research 21, no. 5 (May 1, 2006): 1261–68. http://dx.doi.org/10.1557/jmr.2006.0162.

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Single-crystal lead titanate [(001)PbTiO3 (PT)] thin films were heteroepitaxially grown on a miscut strontium titanate [(001)SrTiO3 (ST)] substrate by radio frequency magnetron sputtering. The PT thin films were grown via a step-flow growth. The step-flow growth enhanced the layer growth resulting in the continuous (001) single-crystal structure without a dislocated interface for the film thickness below 200 to 250 nm. The PT thin films show a small temperature variation of the lattice parameters unlikely to the bulk PT crystals due to the substrate clamping. The temperature variation of the lattice constants is discussed in terms of the thermo-elastic deformation analysis for the PT/ST heterostructure.
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Chang, H. L. M., T. J. Zhang, H. Zhang, J. Guo, H. K. Kim, and D. J. Lam. "Epitaxy, microstructure, and processing-structure relationships of TiO2 thin films grown on sapphire (0001) by MOCVD." Journal of Materials Research 8, no. 10 (October 1993): 2634–43. http://dx.doi.org/10.1557/jmr.1993.2634.

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TiO2 thin films have been deposited on sapphire (0001) substrates under various conditions by metal-organic chemical vapor deposition. The structural properties of the deposited films were characterized by x-ray diffraction and transmission electron microscopy. The important growth parameters were found to be the deposition temperature and the deposition rate. The ranges studied for the two parameters were 400 to 850 °C and 10 to 120 Å/min, respectively. Depending on the growth conditions, most of the deposited films were either single-phase anatase or rutile, or a mixture of the two. These films were all epitaxial, but none of them were single-crystal films. Three distinct epitaxial relationships were observed between the films and the substrates, and, depending on the growth conditions, a deposited film can contain one, two, or all three of them. The fact that the films we obtained, although epitaxial, were never single crystal is explained based on the consideration of the difference in the rotational symmetries of the substrate surface and the film growth plane. We believe that it should be generally true that, in heteroepitaxial growth, a true single-crystal film can never be obtained as long as the point symmetry group of the substrate surface is not a subgroup of that of the film growth plane.
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Krakow, W., N. M. Rivera, R. A. Roy, R. S. Ruoff, and J. J. Cuomo. "Epitaxial growth of C60 thin films on mica." Journal of Materials Research 7, no. 4 (April 1992): 784–87. http://dx.doi.org/10.1557/jmr.1992.0784.

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Single crystal films of C60 of different thickness values have been deposited on mica substrates by resistance evaporation. Electron diffraction and high resolution microscopy have been used to assess the orientational ordering and the nature of the defects present in these face-centered cubic films which exhibit a 〈111〉 direction normal to the film surface.
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Ohtake, Mitsuru, Shigeyuki Minakawa, and Masaaki Futamoto. "Preparation of 3d Ferromagnetic Transition Metal Thin Films with Metastable bcc Structure on GaAs(100) Substrates." Key Engineering Materials 605 (April 2014): 478–82. http://dx.doi.org/10.4028/www.scientific.net/kem.605.478.

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Ni, permalloy (Py: Ni - 20 at. % Fe), and Co films of 40 nm thickness are prepared on GaAs (100) single-crystal substrates at room temperature and 200 °C by magnetron sputtering. The growth behavior and crystallographic properties are studied. In early stages of film growth, metastable bcc single-crystals nucleate on the substrates for all the film materials. The crystal structure is stabilized through hetero-epitaxial growth. With increasing the thickness beyond 2 nm, the bcc structure starts to transform into fcc or hcp structure through atomic displacements parallel to the bcc {110} close-packed planes. The transformation orientation relationships are fcc {111}<10>, hcp {0001}<110> || bcc {110}<001>. The resulting Ni and Py films consist of a mixture of bcc and fcc phases, whereas the Co films involve an hcp phase in addition to the metastable bcc phase.
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Wang, Nan, Yu-Xiang Dai, Tian-Lin Wang, Hua-Zhe Yang, and Yang Qi. "Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films." IUCrJ 7, no. 1 (January 1, 2020): 49–57. http://dx.doi.org/10.1107/s2052252519015458.

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The preferred orientation growth characteristics and surface roughness of polycrystalline bismuth (Bi) thin films fabricated on glass substrates using the molecular beam epitaxy method were investigated at temperatures ranging from 18 to 150°C. The crystallization and morphology were analyzed in detail and the polycrystalline metal film structure-zone model (SZM) was modified to fit the polycrystalline Bi thin film. The boundary temperature between Zone T and Zone II in the SZM shifted to higher temperatures with the increase in film thickness or the decrease of growth rate. Furthermore, the effect of the thickness and surface roughness on the transport properties was investigated, especially for Bi thin films in Zone II. A two-transport channels model was adopted to reveal the influence of the film thickness on the competition between the metallic surface states and the semiconducting bulk states, which is consistent with the results of Bi single-crystal films. Therefore, the polycrystalline Bi thin films are expected to replace the single-crystal films in the application of spintronic devices.
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Miller, K. T., and F. F. Lange. "Highly oriented thin films of cubic zirconia on sapphire through grain growth seeding." Journal of Materials Research 6, no. 11 (November 1991): 2387–92. http://dx.doi.org/10.1557/jmr.1991.2387.

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A two-step process has been developed to form highly oriented thin films in material systems with dissimilar crystal structures and interatomic spacings. This processing method utilizes current polycrystalline thin film deposition techniques. In this method, a polycrystalline thin film is first deposited and heat treated to promote its breakup into isolated grains. The breakup process favors those grains that have a low substrate interfacial energy and so produces a film of highly oriented but isolated grains. In the second process step, another polycrystalline thin film is deposited. The remnant grains act as seeds for the growth of a highly oriented thin film. The process is demonstrated through the growth of highly (100) oriented thin films of cubic ZrO2 (25 mol % Y2O3) on (0001) Al2O3 single crystal substrates, a material system in which film and substrate have dissimilar structures and interatomic spacings. Implications for the growth of epitaxial films using this method are discussed.
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Heimann, D., T. Wagner, J. Bill, F. Aldinger, and F. F. Lange. "Epitaxial growth of β–SiC thin films on a 6H–SiC substrate using the chemical solution deposition method." Journal of Materials Research 12, no. 11 (November 1997): 3099–101. http://dx.doi.org/10.1557/jmr.1997.0403.

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A polyvinylmethylsilane precursor has been used for the epitaxial growth of SiC thin films on 6H–SiC single crystal substrates. The films were prepared by dipping the single crystal 6H–SiC substrates into the precursor polymer solution with subsequent thermal treatments at different temperatures. Transmission electron microscopy (TEM) was used to characterize the microstructure and chemistry of the different SiC films. At 1100 °C, the film was amorphous and contained substantial oxygen. At 1600 °C, an epitaxial, single crystalline β–SiC film was observed.
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Tamaki, Jun, Gregory K. L. Goh, and Fred F. Lange. "Novel epitaxial growth of barium titanate thin films by electrodeposition." Journal of Materials Research 15, no. 12 (December 2000): 2583–86. http://dx.doi.org/10.1557/jmr.2000.0368.

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Electrodeposition was used to grow epitaxially BaTiO3 thin films on SrTiO3 single-crystal substrates with La0.7Sr0.3MnO3 (LSMO) conducting buffer layers. The epitaxial films appeared to consist of very small (ø10 nm) particles. The film completely covered the substrate when the reaction was performed at temperatures between 60 and 90 °C with LSMO potentials of –0.5 to –1.0 V against a Pt counter-electrode. It appeared that an electrophoretic force, acting on BaTiO3 nuclei within the solution, facilitated the deposition of the film.
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Dissertations / Theses on the topic "Single Crystal Thin Film Growth"

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Nandhakumar, Iris. "The early stages of CdTe epitaxial growth on gold single crystal electrode surfaces." Thesis, University of Southampton, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242869.

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Imanieh, Mohsen. "Growth and characterisation of CuInSe←2 and CuGA←XIn←1-←XSe←2 single crystals." Thesis, University of Salford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.253047.

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Lee, Myoung-Bok. "The growth and spectroscopic characterisation of ultra-thin aluminium oxide films on single crystal metal surfaces." Thesis, University of Liverpool, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.309877.

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Zhang, Xi. "Vapor Phase Growth of ZnO Single Crystals/Thin Films and Attempts for p-type Doping." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-142870.

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The growth of ZnO single crystals and ZnO thin films on Si substrates by an open-system vapor phase method was studied in this thesis. The as-grown ZnO single crystals were investigated by means of photoluminescence (PL). Two unique emissions were observed in virgin and hydrogenated crystals. The up-to-now attempts for the p-type doping of ZnO were summarized and our doping studies were performed using nitrogen and antimony. The seed-free and open-system vapor phase method is a simple and low cost approach to grow good quality ZnO single crystals. The growth parameters, including flow rates of N2, H2, O2, and growth temperatures, have various influences on the crystal growth, and also on the optical properties of the as grown crystals. The as-grown crystals are c-axis oriented needle crystals, and the crystals typically have a maximum length of 40 mm and a maximum diameter of 1 mm. The needle-shaped crystals are n-type with main donors due to Al, Ga, and In impurities, as determined from the PL spectra. Two unidentified PL emission lines (P1 at 3.3643 eV and P2 at 3.3462 eV) are observed in our vapor phase grown ZnO single crystals. P1 is attributed to the recombination of an exciton bound to a shallow donor，which has a binding energy of 42.2 meV. Hydrogenation of the as-grown ZnO single crystal leads to the appearance of the P2 line and a great reduction of the P1 line. Subsequent isochronal annealing in the ambient atmosphere leads to gradual reduction of P2 and the reappearance of P1. The PL measurements indicate that hydrogen is involved in the defect origins of the P2 line. ZnO thin films were deposited on Si substrates by the vapor phase method. Three different types of configurations with alternative source materials and oxidizers were employed and compared. It is demonstrated that, methods with lower growth temperatures are easier to deposit homogenous ZnO films on Si substrate. Donor-acceptor-pair (DAP) transition at 3.245 eV and its phonon replicas were observed in the PL spectra of the thin films, which are grown by the hydrogen-free vapor phase method. The appearance of DAP transition indicates the presence of acceptor in the films. The long-standing challenge of p-type doping in ZnO is mainly attributed to the low valence band maximum (VBM) at the absolute energy scale, the spontaneous formation of compensating defects and the lack of appropriate acceptors with small ionization energy. Two attempts for the p-type doping of ZnO were performed by nitrogen diffusion into ZnO single crystals from plasma after the growth or by in-situ doping antimony during the growth of ZnO films. No hole conductivity could however be achieved in our doped samples
In dieser Arbeit wurde das Wachstum von ZnO-Einkristallen und Dünnfilmschichten auf Si durch chemische Gasphasenabscheidung in einem offenen System untersucht. Die hergestellten ZnO-Einkristalle wurden mit Photolumineszenzmessungen (PL) untersucht. Es konnten sowohl in unbehandelten als auch in mit Wasserstoff behandelten Proben zwei charakteristische Linien beobachtet werden. Sowohl die bisherigen Versuche zur p-Typ Dotierung von ZnO als auch die in dieser Arbeit durchgeführten Versuche mit Stickstoff und Antimon werden zusammengefasst und präsentiert. Die Keimkristall-freie Gasphasenabscheidung (CVD) in offenen Systemen ist eine einfache und kostengünstige Methode zur Herstellung von qualitativ hochwertigen ZnO-Einkristallen. Die Wachstumsparameter, einschließlich der Flussraten von N2, H2 und O2 sowie der Wachstumstemperatur beeinflussen das Kristallwachstum sowie die optischen Eigenschaften der hergestellten Kristalle. Die hergestellten Kristalle wachsen typischerweise als entlang der c-Achse orientierte Nadeln mit Längen von bis zu 40 mm und Durchmessern von bis zu 1 mm. Die nadelförmigen Kristalle besitzen eine n-Typ Dotierung, welche hauptsächlich durch Verunreinigung mit Al, Ga und In verursacht wird. Zwei bisher nicht identifizierte PL-Linien (P1 bei 3,3643 eV und P2 bei 3,3462 eV) wurden in den hergestellten Kristallen beobachtet. P1 wird der Rekombination von Exzitonen an flachen Donatoren mit einer Bindungsenergie von 42,2 meV zugeordnet. Eine Wasserstoffbehandlung der hergestellten Kristalle führt zum Erscheinen der P2-Linie und einer starken Unterdrückung der P1-Linie. Anschließende isochronische Temperung in Luft führt zu einer schrittweisen Reduzierung der Intensität der P2-Linie und zu einer Verstärkung der P1-Linie. Photolumineszenzmessungen weisen auf eine Korrelation von P2 mit Wasserstoff hin. Zusätzlich wurden mit der CVD-Methode dünne ZnO-Schichten auf Si-Substraten abgeschieden. Drei unterschiedliche Konfigurationen mit verschiedenen Ausgangsmaterialien (ZnO-Pulver bw. Zn-Pulver) und verschiedenen Oxidationsmitteln (O2 bzw. Wasser) wurden untersucht und verglichen. Es wird gezeigt, dass mit den Konfigurationen mit geringerer Wachstumstemperatur am einfachsten homogene ZnO-Schichten auf Si abgeschieden werden können. Ein Donator-Akzeptor-Paar-Übergang (DAP) bei 3,245 eV und die dazugehörigen Phononenrepliken wurden in den Schichten beobachtet, welche in einer Wasserstoff-freien Konfiguration abgeschieden wurden. Diese DAP-Übergänge sind ein Hinweis auf die Anwesenheit von Akzeptoren. Die seit langem bestehende Herausforderung der p-Typ-Dotierung von ZnO hat ihre Wurzeln hauptsächlich in dem niedrig liegenden Valenzbandmaximum (VBM) auf der absoluten Energieskala, der spontanen Bildung von kompensierenden Defekten sowie dem Mangel an geeigneten Akzeptoren mit geringer Ionisierungsenergie. Zwei Versuche zur p-Typ-Dotierung von ZnO durch Behandlung der Kristalle mit N-Plasma bzw. durch in-situ Dotierung mit Sb während des Kristallwachstums wurden durchgeführt. Allerdings konnte damit keine nachweisbare Löcherleitung in den behandelten Proben erreicht werden
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Al-Dhafiri, Abdullah M. "CdS-CuₓS single crystal and thin film solar cells." Thesis, Durham University, 1988. http://etheses.dur.ac.uk/6617/.

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The work presented in this thesis is concerned with photovoltaic cells formed by plating CdS single crystals and thin films, and Cd(_y) Zn(1 _ y)S single crystals, with copper sulphide. An electroplating technique has been used to control the phase of copper sulphide by changing the electric field during its formation. Different phases of Cu(_x)S have been identified directly using Reflection High Energy Diffraction (RHEED), and indirectly from spectral response measurements. A dramatic change in the spectral response accompanying the reduction in the covellite response associated with an increase in that from chalcocite following argon heat treatment has been achieved. The change from the djurleite phase to that of chalcocite has also been obtained by using argon heat treatment for 5 minutes at 200 C. This effect was found to be reversible in that layers of chalcocite were converted to djurleite when air was used as the ambient for the heat treatment. C-V measurements have demonstrated that with increasing plating bias the donor concentration decreases at first before it assumes a constant value. This led to the effect of decreasing the junction capacitance as the width of the depletion region changed. The problem of the stability of the CdS-Cu(_2)S photovoltaic devices formed by wet plating" is addressed by studying the combined effects of the substrate onto which the CdS is deposited and the ambient used during annealing. Thin film cells have been prepared on both Ag/Cr and SnO substrates, and the device characteristics for each have been investigated as a function of annealing ambient. The results have shown that devices formed on Ag/Cr substrates were more stable following annealing in air than in argon, while the converse was true for cells fabricated on SnO(_x) substrates. The degradation effects of CdS-Cu(_2) S photovoltaic cells have been investigated. While devices stored in the dark showed little or no degradation, those maintained under illumination exhibited a significant deterioration in all operational parameters over a four week period. As far as the combined effect of temperature and ambient on the stability of cells are concerned, it was found that the ageing of devices in argon at room temperature in the dark was negligible, and moreover the fill factor was observed to improve marginally. When the devices were stored in the same ambient conditions at 50 C, they showed a significant improvement in the fill factor, but simultaneously exhibited a considerable reduction in the short circuit current. This process was reversible, since the sensitivity of degraded devices could be restored by annealing them in a hydrogen/nitrogen mixture. By comparing Electron Spectroscopy for Chemical Analysis (ESCA) studies with solar cell device characteristics, it has been shown that the formation of copper oxide on the Cu(_2)S surface plays a significant role in the degradation of CdS-Cu(_2) S devices. The extent of the cross-over between the dark and light J-V characteristics is a function of the period of etching used prior to junction formation. The variation of current and diode factor has been established as a function of the bias value. The dependence of forward current on the temperature at fixed forward voltage has also been investigated. Finally this work has shown that an increase in V(_oc) can be achieved when Cd(_0◦8)Zn(_0◦2)S is used as a base material for solar cells instead of CdS. Different traps were identified through a photocapacitance investigation. An important trap was found at 0.78eV below the conduction band. It has been demonstrated that the effect of this level was found to be diminished much more slowly when the annealing was carried out in argon rather than in air. This level may play an important role in the Cd(0◦8) Zn(0◦2)S-Cu(_2)S solar cell properties.
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Barnes, C. J. "Adsorption of metals on single crystal substrates." Thesis, University of Liverpool, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234834.

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Nunes, Benjamin P. (Benjamin Paul) 1976. "Edge-defined film-fed growth of single-crystal piezoelectrics." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/17530.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001.
Includes bibliographical references (leaves 97-99).
Many transducer technologies would benefit tremendously from the development of shaped, oriented single-crystals, of a high-strain, piezoelectric material. Recently, unusually high electrostrictive and piezoelectric actuation has been observed in polycrystals and flux-grown <100> single-crystals of ... Using seeded, Edgedefined Film-fed Growth (EFG) and the related Stepanov Technique (ST), low-hysteresis, highstrain, <100> and <111> oriented, single-crystals of BNBZT can be grown in rod and fiber form, with direct applications in active fiber composites and related devices. For this work, <100> and <111> oriented, single-crystal rods and fibers were grown via ST and EFG. Fibers, 260-700[mu]m in diameter and over 1.0 meter long, were grown using a custom built EFG machine and a capillary-shaper; rods, 2-3mm in diameter, up to 110mm long were grown using a floating-shaper. In all cases, strontium titanate (STO) was found to be an effective seed crystal. <111> oriented tetragonal crystals generated low hysteresis actuation consistent with a polarization rotation mechanism [14], but with only modest strains: ... <100> oriented tetragonal BNBZT generated high strains up to ... with hysteresis consistent with 90° domain switching. Electromechanical actuation and crystal structure in this system appear to be strongly affected by deviations from stoichiometry (B-site vacancies). Barium segregation and bismuth vaporization can also compromise electromechanical performance. Hypotheses are posed to explain the low actuation seen from <111> oriented ferroelectrics, and the effects of cation deficiencies on phase-stability. Cracks, pores, and other growth challenges encountered in ST and EFG growth of BNBZT are described.
by Benjamin P. Nunes.
S.M.
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Swift, Michael Joseph Robert. "Aspects of single crystal and thin film high field electroluminescence." Thesis, University of Hull, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.304437.

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Hashim, K. I. "A study of crystal growth by field emission microscopy." Thesis, Bangor University, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.380230.

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Huang, Pao-Cheng. "Analysis of single-crystal semiconductor thin film structure by x-ray diffraction." Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/20145.

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Books on the topic "Single Crystal Thin Film Growth"

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United States. National Aeronautics and Space Administration., ed. System for the growth of bulk SiC crystals by modified CVD techniques: Final report. [Washington, DC: National Aeronautics and Space Administration, 1994.

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Outlaw, R. A. Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition. Washington: NASA, 1986.

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P, Hopson, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch, eds. Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1986.

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P, Hopson, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch, eds. Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1986.

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In-situ characterization of thin film growth. Cambridge: Woodhead Publishing, 2011.

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NATO Advanced Research Workshop on Thin Film Growth Techniques for Low-Dimensional Structures (1986 University of Sussex). Thin film growth techniques for low-dimensional structures. New York: Plenum Press, 1987.

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J, Srolovitz David, and Materials Research Society Symposium on the "Modeling and Simulation of Thin-Film Processing" (1995 : San Francisco, Calif.), eds. Modeling and simulation of thin-film processing: Symposium held April 17-20, 1995, San Francisco, California, U.S.A. Pittsburgh, Penn: Materials Research Society, 1995.

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United States. National Aeronautics and Space Administration., ed. Enhancement of thickness uniformity of thin films grown by pulsed laser deposition. [Washington, D.C.?: National Aeronautics and Space Administration, 1995.

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Vladimir, Matias, and Materials Research Society Meeting, eds. Artificially induced grain alignment in thin films: Symposium held December 2-3, 2008, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2009.

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1921-, Atwater H. A., ed. Evolution of surface and thin film microstructure: Symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1993.

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Book chapters on the topic "Single Crystal Thin Film Growth"

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Nagaoka, Akira, and Kenji Yoshino. "Growth of CZTS Single Crystals." In Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 133–48. Chichester, UK: John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch6.

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Konishi, M., K. Hayashi, A. Odagawa, Y. Enomoto, Y. Yamada, M. Nakamura, K. Ohtsu, et al. "Homo-Epitaxial Growth of YBCO Thin Film on YBCO Single Crystal." In Advances in Superconductivity VI, 995–98. Tokyo: Springer Japan, 1994. http://dx.doi.org/10.1007/978-4-431-68266-0_226.

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Norton, David P., Douglas H. Lowndes, D. K. Christen, E. C. Jones, J. D. Budai, Thomas D. Ketcham, Dell St.julien, K. W. Lay, and J. E. Tkaczyk. "YBa2Cu3O7−x Thin Film Growth on Single Crystal and Polycrystalline Yttria-Stabilized Zirconia." In Science and Technology of Thin Film Superconductors 2, 157–65. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-1345-8_24.

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Heinrich, B., A. S. Arrott, J. F. Cochran, S. T. Purcell, K. B. Urquhart, N. Alberding, and C. Liu. "Epitaxial Growths and Surface Science Techniques Applied to the Case of Ni Overlayers on Single Crystal Fe(001)." In Thin Film Growth Techniques for Low-Dimensional Structures, 521–48. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4684-9145-6_29.

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Bozovic, I., J. N. Eckstein, D. G. Schlom, and J. S. Harris. "In-Situ Growth of Superconducting Single Crystal Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy." In Science and Technology of Thin Film Superconductors 2, 267–72. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-1345-8_39.

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Fan, Y. C., A. G. Fitzgerald, H. C. Xu, B. E. Storey, A. O. Tooke, P. R. Broussard, and V. C. Cestone. "Atomic force microscopy studies of the surface morphology of annealed single crystal substrates and substrate annealing effects on the YBa2Cu3O7-x thin film growth." In Electron Microscopy and Analysis 1997, 205–8. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003063056-53.

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Makita, T., M. Ogihara, F. Toda, and H. Abe. "Initial Crystal Growth Stage of BRBO Thin Film." In Advances in Superconductivity V, 919–22. Tokyo: Springer Japan, 1993. http://dx.doi.org/10.1007/978-4-431-68305-6_207.

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Thiru, Sathiabama, Miki Fujita, Atsushi Kawaharazuka, and Yoshiji Horikoshi. "Electrical and Photoluminescence Study of Undoped CuGaSe2 Single Crystal Thin Film." In The Malaysia-Japan Model on Technology Partnership, 265–70. Tokyo: Springer Japan, 2014. http://dx.doi.org/10.1007/978-4-431-54439-5_25.

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Matus, M., J. Winter, and H. Kuzmany. "Stability of Single-Crystal and Thin-Film Raman Spectra in C60." In Springer Series in Solid-State Sciences, 255–58. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-85049-3_42.

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Ozawa, S., Y. Sasajima, and T. Haseda. "Crystal Growth, Fractal Growth and Liquid-like Behavior in the Case of Thin Film Formation." In Springer Proceedings in Physics, 198–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-76008-2_38.

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Conference papers on the topic "Single Crystal Thin Film Growth"

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Xu, Jianjun, Ligui Zhou, and M. Thakur. "Electro-optic Modulation Based on Channel Waveguide of Organic Single Crystal Material." In Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/otfa.1997.the.24.

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Channel waveguide is the basic element in fabrication of electro-optic modulator for external electro-optic modulation. Using polymer electro-optic materials, channel waveguide device can be comparative easily fabricated, but the main problem for polymer materials is their stability. On the other hand, organic single crystal has excellent stability, the disadvantage of them is the difficulty in processing which limited their application potential. Recently, channel waveguide has been fabricated by direct growth inside the hollow fiber, but those channel waveguides proved to be difficult to fabricate electrode besides the crystal [1]. By combining ideas of growth of crystal from hollow fibre and shear method [2], a new method able to fabricate raised-up channel waveguide of organic crystal was initiated. In this method, solution of organic molecule was introduced between two substrates, one of them has patterned lines on it. Due to the polar interaction between the substrate materials and molecules of the solution, Single crystal channel waveguides were grown along the patterned line on the substrate, the dimension and direction of the crystal materials were controlled by these patterned lines. Fig.1 illustrated the diagram of this method.
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Zhou, Biao, Chengzhi Su, Biao Shi, Yunjiao Wang, Leyong Yu, Shuanglong Feng, and Deqiang Wang. "Growth of single crystal WS2 thin films via atmospheric pressure CVD." In 2017 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO). IEEE, 2017. http://dx.doi.org/10.1109/3m-nano.2017.8286279.

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Tsukruk, V. V., A. Liebmann, Foster, D. H. Reneker, V. N. Bliznyuk, S. Kirstein, and H. Möhwald. "Composite Molecular Films From Cyanine Dye Single Crystals Grown On Lipid Monolayers." In Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/otfa.1993.wd.19.

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Cyanine dyes can be used for formation of composite molecular Langmuir- Blodgett (LB) films with interesting photosensitive properties and prospects of non-linear optical applications1. For water-soluble cyanine dye molecules the possibility of epitaxial single crystal growth by adsorption of dye molecules onto the surface of oppositely charged lipid monolayers was demonstrated recently2. X-ray analysis, electron diffraction and fluorescence microscopy give information about unit cell parameters, average thickness of these composite LB films, and their morphology on a micron scale2,3 Data about surface morphology and roughness on a submicron scale and details of the molecular packing in these films have not yet been obtained. Here we discuss the results of atomic force microscopy (AFM) and quantitative X-ray reflectivity studies of the molecular structures of these composite molecular films.
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Ueda, H., K. Takeuchi, and A. Kikuchi. "Precipitation of thin film organic single crystals by a novel crystal growth method using electrospray and ionic liquid layer." In 2017 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2017. http://dx.doi.org/10.7567/ssdm.2017.b-3-03.

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Leyderman, Alexander, Yulong Cui, Javier W. Li, Sergey S. Sarkisov, Michael J. Curley, Curtis E. Banks, and Benjamin G. Penn. "Growth and characterization of single-crystal organic thin films for electro-optic modulators." In SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, edited by Ravindra B. Lal and Donald O. Frazier. SPIE, 1999. http://dx.doi.org/10.1117/12.351425.

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Focsha, Alexandru, Petru Gashin, and Alexei Simashkevich. "Photovoltaic Phenomena in Thin Film ZnTe-CdSe Heterojunctions." In ASME 2001 Solar Engineering: International Solar Energy Conference (FORUM 2001: Solar Energy — The Power to Choose). American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/sed2001-141.

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Abstract Thin layer ZnTe-CdSe heterojunctions were produced by vapor phase epitaxial growth of ZnTe and CdSe layers on mica and single-crystal ZnSe substrates. These heterojunctions photosensitivity covers the wavelength region of 0.56–0.85 μm. The shape of photosensitivity spectral dependence of ZnTe-CdSe heterojunction depends on the components thickness and their doping level. Thin layer ZnTe-CdSe epitaxial heterojunction parameters under illumination of 80 mW/cm2 (AM1.5) are: FF=0.53, Uoc=0.72V, Isc=14.8 mA/cm2, efficiency η=7.1%. Thin film polycrystalline ZnTe-CdSe heterojunctions having the efficiency η=4.3%, Uoc=0.54 V, Isc=10.6 mA/cm2 were fabricated by using As or Cu doped ZnTe layers and In doped CdSe layers produced by HWT.
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Bhowmik, A. K., J. Wang, and M. Thakur. "Growth and nonlinear optical studies of single-crystal thin films of 4-aminobenzophenone (ABP)." In Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6. IEEE, 1998. http://dx.doi.org/10.1109/cleo.1998.676063.

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Zuhr, R. A., T. E. Haynes, S. J. Pennycook, and B. R. Appleton. "Heteroepitaxial Growth of GaAs Films by Alternating Ion Beam Deposition." In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/msba.1989.wc8.

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The formation of thin films by the direct deposition of ions from a low-energy ion beam (ion beam deposition or IBD) has been shown to be an effective technique for promoting the epitaxial growth of elemental semiconductors at low temperatures.(1-3) It has also been used to produce layers of stoichiometric oxides and silicides by deposition of a single element at temperatures lower than those required for thermal formation of the same compounds.(4,5) IBD, with a mass- and energy-analyzed ion beam, has many advantages for thin film fabrication. It provides high purity, isotopic selectivity, control of the dose rate, sub-monolayer control of the dose, and control of the incident ion energy and the resultant effect on the chemistry and crystal structure of the film. In this work the IBD concept is extended significantly by the deposition of multiple elements onto a single substrate to produce heteroepitaxial growth of a III-V semiconductor, GaAs, on elemental single crystal substrates, Si and Ge.
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Robison, Andrew, Lei Lei, Sowmya Ramarapu, and Marisol Koslowski. "Interface Effects in Strained Thin Films." In ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-12539.

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Crystalline films grown epitaxially on a substrate consisting of a different crystalline material are of considerable interest in optoelectronic devices and the semiconductor industry. The film and substrate have in general different lattice parameters. This lattice mismatch affects the quality of interfaces and can lead to very high densities of misfit dislocations. Here we study the evolution of these misfit dislocations in a single crystal thin film. In particular, we consider the motion of a dislocation gliding on its slip plane within the film and its interaction with multiple obstacles and sources. Our results show the effect of obstacles such as precipitates and other dislocations on the evolution of a threading dislocation in a metallic thin film. We also show that the material becomes harder as the film thickness decreases in excellent agreement with experiments.
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Pouladi, Sara, Monika Rathi, Mojtaba Asadirad, Pavel Dutta, Seung Kyu Oh, Devendra Khatiwada, Shahab Shervin, Yao Yao, Venkat Selvamanickam, and Jae-Hyun Ryou. "Flexible GaAs Single-Junction Solar Cells Based on Single-Crystal-Like Thin-Film Materials Directly Grown on Metal Tapes." In 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366640.

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Reports on the topic "Single Crystal Thin Film Growth"

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Trolier-McKinstry, Susan, and Thomas R. Shrout. Crystal Growth and Thin Film Deposition of High Performance Piezoelectrics. Fort Belvoir, VA: Defense Technical Information Center, January 2001. http://dx.doi.org/10.21236/ada428818.

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Galloway, Heather Claire. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy. Office of Scientific and Technical Information (OSTI), December 1995. http://dx.doi.org/10.2172/219542.

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Jing, Dapeng. Metal thin film growth on multimetallic surfaces: From quaternary metallic glass to binary crystal. Office of Scientific and Technical Information (OSTI), January 2010. http://dx.doi.org/10.2172/1037881.

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Roberts, Joel Glenn. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction. Office of Scientific and Technical Information (OSTI), May 2000. http://dx.doi.org/10.2172/764397.

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