Dissertations / Theses on the topic 'Single and Multi-junction Solar Cells'
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Shim, Jae Won. "Study of charge-collecting interlayers for single-junction and tandem organic solar cells." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/51820.
Full textLynch, Marianne Catherine. "Modelling and optimisation of single junction strain balanced quantum well solar cells." Thesis, Imperial College London, 2011. http://hdl.handle.net/10044/1/8479.
Full textMahajumi, Abu Syed. "Type-II gallium antimonide quantum dots in gallium arsenide single junction solar cells." Thesis, Lancaster University, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.658211.
Full textZhang, Haoquan S. M. Massachusetts Institute of Technology. "An integrated multi-input single-output buck converter for laterally-arrayed multi-bandgap solar cells." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/121745.
Full textCataloged from PDF version of thesis.
Includes bibliographical references (pages 151-156).
Concentrated Photovoltaic (CPV) systems provides a potentially low-cost and high-efficiency alternative to conventional mono-crystalline Si panel PV systems, and a new CPV system with Laterally-Arrayed Multi-Bandgap (LAMB) cells is introduced. In this thesis, an IC-based Multi-Input Single-Output (MISO) power converter, which serves as the small-footprint and self-powered power management module of the CPV system, is designed and tested. The proposed converter shall efficiently harvest energy from 4 types of solar cells and track the Maximum Power Point (MPP) at the cell-block level. First, the circuit topology, MPP Tracking (MPPT) algorithm, and control mechanism are verified with discrete converters, then a qualitative demonstration is conducted outdoors to show the concept of the entire CPV system with power management. Finally, a first-generation integrated converter, with the passive components, Analog/Digital converters and a MPPT-enabling micro-controller off-chip, is implemented.
by Haoquan Zhang.
S.M.
S.M. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science
Fifer, Tommy L. "Radiation effects on multi-junction solar cells." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2001. http://handle.dtic.mil/100.2/ADA401081.
Full textThesis advisor(s): Michael, Sherif . "December 2001." Includes bibliographical references (p. 65-67). Also available online.
Mantilla, Pérez Paola. "Multi-junction thin film solar cells for an optimal light harvesting." Doctoral thesis, Universitat Politècnica de Catalunya, 2017. http://hdl.handle.net/10803/406044.
Full textLa fotovoltaica de capa delgada engloba un grupo de tecnologías capaces de capturar la luz en tan sólo unos pocos nanómetros de espesor. Su bajo costo de manufactura, flexibilidad y bajo peso, hace a las capas delgadas candidatas ideales para la integración en edificios. En particular, las celdas orgánicas pueden proveer una transparencia de alta calidad similar a las ventanas convencionales irrealizable con tecnologías basadas en Silicio. Sin embargo, para la producción de electricidad a gran escala en donde la eficiencia es, tal vez, el factor determinante, existen nuevas tecnologías como las celdas solares de perovskita que pueden resultar más adecuadas. Al momento de escribir esta tesis, las eficiencias de celdas de perovskita de simple unión casi duplican la de las mejores celdas orgánicas de simple unión. Una limitante de ambas tecnologías, en especial de las celdas orgánicas y en menor medida de las perovskitas, es la baja movilidad de las cargas. Esta, junto a otras desventajas de los absorbentes orgánicos y perovskitas limita su espesor al rango de los 100 a los 130 nm, y entre los 500 a 600 nm, respectivamente. En resumen, el manejo de la luz debe constituir un ingrediente esencial para el diseño de los dispositivos, tal que se consiga un desempeño óptimo en la aplicación para la cual sean considerados. En esta tesis, con el fin de alcanzar un aprovechamiento óptimo de la luz y por ende aumentar el desempeño de las celdas solares de capa delgada, utilizamos dos enfoques. Por un lado, aumentamos el espesor total de material absorbente dentro del dispositivo sin incrementar el espesor de las capas actives individuales y por otro lado, combinamos absorbentes complementarios para cubrir una porción más amplia del espectro solar. Estos enfoques conllevan al doble reto de encontrar la distribución de campo electromagnético óptima dentro de una estructura compleja de multicapas con dos o más capas activas, junto a la implementación de una recolección o recombinación de cargas efectiva por parte de las capas intermedias encargadas de conectar dos subceldas adyacentes. En el caso de las celdas orgánicas, consideramos celdas de multiunión usando el mismo material activo para todas las subceldas. Para implementarlas, se realizan estructuras cuyas capas activas no excedan los 100 nm. También estudiamos configuraciones donde los materiales tienen absorciones complementarias usando perovskitas. En ambos casos, sobretodo en el primero, se requiere un método sistemático para optimizar el aprovechamiento de la luz. Para obtener las configuraciones óptimas empleamos una estrategia de integración inversa junto con un cálculo del campo eléctrico basado en el modelo de matriz de transferencia. Además, desarrollamos nuevas estrategias para optimizar la colección de cargas en las capas de interconexión de las subceldas aplicables a dispositivos tipo tandem, triple, 4-terminales y serie-paralelo.
Kolhatkar, Gitanjali. "Characterisation of high-efficiency multi-junction solar cells and tunnel junctions." Thesis, University of Ottawa (Canada), 2011. http://hdl.handle.net/10393/28939.
Full textWalker, Alexandre W. "Bandgap Engineering of Multi-Junction Solar Cells for Enhanced Performance Under Concentration." Thèse, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/26240.
Full textJudkins, Zachara Steele. "A market analysis for high efficiency multi-junction solar cells grown on SiGe." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/42143.
Full textIncludes bibliographical references (leaves 50-53).
Applications, markets and a cost model are presented for III-V multi-junction solar cells built on compositionally graded SiGe buffer layers currently being developed by professors Steven Ringell of Ohio State University and Eugene Fitzgerald of MIT. Potential markets are similar to those currently occupied by high efficiency multi-junction space solar cells grown on a Germanium substrate. Initial cost analysis shows that at production volumes similar to those of the state of the art, cost could be reduced by a factor of' four. Significant market share may be gained in both the space and terrestrial PV markets due to improved performance associated with superior materials properties advantages as well as production cost reductions.
by Zachary Steele Judkins.
M.Eng.
Korostyshevsky, Aaron. "Characterization of Radiation Damage in Multi-Junction Solar Cells Using Light-Biased Current Measurements." Connect to full text in OhioLINK ETD Center, 2008. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=toledo1224614484.
Full textTypescript. "Submitted as partial fulfillments of the requirements for the Master of Science Degree in Physics." "A thesis entitled"--at head of title. Bibliography: leaves 41-42.
Lee, Kan-Hua. "Photon coupling effects and advanced characterisations of multiple-quantum-well multi-junction solar cells." Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/24747.
Full textTournet, Julie. "III-Sb-based solar cells and their integration on Si." Thesis, Montpellier, 2019. http://www.theses.fr/2019MONTS003/document.
Full textIII-Sb materials have demonstrated their potential for multiple opto-electronic devices, with applications stretching from communications to environment. However, they remain an almost unexplored segment for classical photovoltaic systems. In this research, we intend to demonstrate that III-Sb-based devices are promising candidates for high-efficiency, low-cost solar cells. Their benefits are two-fold: not only do they offer a wide range of lattice-matched alloys and low-resistivity tunnel junctions, but they also enable direct growth on Si substrates. We thus investigate the building blocks of a GaSb-based multi-junction solar cell integrated onto Si. First, we develop the photovoltaic growth and processing by fabricating homo-epitaxial GaSb cells. Intensity-voltage (J-V) measurements approach the state of the art with 1-sun efficiency of 5.9%. Then, we integrate a GaSb single-junction cell on a Si substrate by molecular beam epitaxy (MBE). X-ray diffraction (XRD) and atomic force microscopy (AFM) analysis show structural and morphological properties close to the best reported in the literature for similar metamorphic buffers. We further adapt the cell configuration to circumvent the high defect density at the GaSb/Si interface. The heteroepitaxial cell results in a reduced efficiency of 0.6%. Nevertheless, this performance is close the most recent advancements on GaSb heteroepitaxial cells on GaAs, despite a much larger mismatch. Last, we investigate the epitaxy of AlInAsSb. This alloy could in theory reach the widest range of bandgap energies while being lattice-matched to GaSb. However, it presents a large miscibility gap, making it vulnerable to phase segregation. AlInAsSb only counts few experimental reports in the literature, all referring to unoptimized growth conditions and abnormally low bandgap energies. We successfully grow good-quality layers with Al composition x_{Al} ranging from 0.25 to 0.75, showing no macroscopic sign of decomposition. Yet, transmission electron microscopy (TEM) observations point to nanometric fluctuations of the quaternary composition. Photoluminescence (PL) data is studied to determine the alloy's electronic properties. We eventually propose and fabricate a tandem cell structure, resulting in 5.2% efficiency. Quantum Efficiency (QE) measurements reveal that the top subcell is limiting the tandem performance. Numerical fits to both J-V and QE data indicate improvement paths for each building block
Fernández, Jara [Verfasser]. "Development of Crystalline Germanium for Thermophotovoltaics and High-Efficiency Multi-Junction Solar Cells / Jara Fernández." Konstanz : Bibliothek der Universität Konstanz, 2010. http://d-nb.info/1026012740/34.
Full textWilkins, Matthew M. "Design of Multi-junction Solar Cells on Silicon Substrates Using a Porous Silicon Compliant Membrane." Thèse, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/24096.
Full textWilkins, Matthew. "Multi-Junction Solar Cells and Photovoltaic Power Converters: High-Efficiency Designs and Effects of Luminescent Coupling." Thesis, Université d'Ottawa / University of Ottawa, 2017. http://hdl.handle.net/10393/36181.
Full textYandt, Mark. "Characterization Techniques and Optimization Principles for Multi-Junction Solar Cells and Maximum Long Term Performance of CPV Systems." Thesis, Université d'Ottawa / University of Ottawa, 2017. http://hdl.handle.net/10393/35870.
Full textVanDyke, Jamie E. "Modeling laser effects on multi-junction solar cells using Silvaco ATLAS software for spacecraft power beaming applications." Thesis, Monterey, California : Naval Postgraduate School, 2010. http://edocs.nps.edu/npspubs/scholarly/theses/2010/Jun/10Jun%5FVanDyke.pdf.
Full textThesis Advisor(s): Michael, Sherif ; Second Reader: Scott, Alan. "June 2010." Description based on title screen as viewed on July 14, 2010. Author(s) subject terms: Solar Cell, Photovoltaic, Directed Energy, Power Beaming, Wireless Power Transfer, Multi-junction, Laser, Silvaco, Modeling, Simulation. Includes bibliographical references (p. 115-117). Also available in print.
Browne, Benjamin. "An experimental and theoretical study of multi-junction and deep-well GaAsP/InGaAs quantum well solar cells." Thesis, Imperial College London, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.530465.
Full textChow, Simon Ka Ming. "Integration of High Efficiency Solar Cells on Carriers for Concentrating System Applications." Thèse, Université d'Ottawa / University of Ottawa, 2011. http://hdl.handle.net/10393/19932.
Full textJadhav, Priyadarshani. "Singlet exciton fission, a multi-exciton generation process, in organic semiconductor solar cells." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/75635.
Full textCataloged from PDF version of thesis.
Includes bibliographical references (p. 107-115).
Organic semiconductor photovoltaics hold the promise of cheap production and low manufacturing setup costs. The highest efficiency seen in research labs, ~10% today, is still too low for production. In this work we explore implementations of a multiple exciton generation process, singlet exciton fission, to work around the Shockley-Queisser limit, according to which, all single junctions cells have a theoretical efficiency limit of 33.7%. This is the first implementation of a singlet fission photovoltaic. We measured a singlet fission efficiency of 72% at room temperature. We showed that singlet fission can be implemented in bulk heterojunction photovoltaics, which is an important result since some of the highest efficiency organic photovoltaics in the last 5 years have been bulk heterojunction structures. Secondly, we showed that the magnetic field effect can be used as a probe to investigate triplet dissociation in singlet fission devices. Thirdly, we implemented singlet fission photovoltaics, using the singlet fission material pentacene as donor and low bandgap infrared-absorptive lead chalcogenide quantum dots as acceptors. Singlet fission can enhance the efficiency of organic photovoltaics only if the fission material is paired with an absorptive low-energy-gap material. We find that pentacene triplet excitons dissociate at the pentacene/quantum dot heterojunctions with an internal quantum efficiency of 35%. Lastly, we investigate a series of materials to find a better acceptor in singlet fission photovoltaics using the methods and some results from the previous two investigations. We investigate device structures that pair pentacene and 6,13 diphenyl-pentacene as singlet fission donors with C60 , perylene diimides, PbS quantum dots and PbSe quantum dots as acceptors.
by Priyadarshani Jadhav.
Ph.D.
Andre, Carrie L. "III-V semiconductors on SiGe substrates for multi-junction photovoltaics." The Ohio State University, 2004. http://rave.ohiolink.edu/etdc/view?acc_num=osu1100290985.
Full textGuo, Fei [Verfasser], and Christoph [Akademischer Betreuer] Brabec. "Material and Process Engineering of Printed Semitransparent Organic Solar Cells and Advanced Multi-junction Architectures / Fei Guo. Gutachter: Christoph Brabec." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2015. http://d-nb.info/107736296X/34.
Full textVeinberg, vidal Elias. "Fabrication, caractérisation et simulation de cellules solaires multi-junction III-V sur silicium." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT091/document.
Full textSi solar cells with record efficiencies over 26% have been recently demonstrated, approaching the Si single-junction limit of 30%. Multi-junction solar cells (MJSC) based on III-V materials can overcome this limit: efficiencies over 45% have been reported for a 5-junction under 1 sun and for a 4-junction under a concentrated illumination of 300 suns. Due to their elevated cost, these cells could be used in terrestrial applications only if operated under very high sunlight concentration for commercial terrestrial applications, which in turn increases the module and system complexity.An intermediate solution consists in fabricating high efficiency III-V solar cells on Si substrates, which are less expensive than the III-V or Ge substrates used in conventional MJSC. Mechanical-stacked and wafer-bonded solar cells, which avoid the unresolved issues of III-V on Si epitaxy, have already demonstrated efficiencies over 33%. This, combined with the recent advancements in the field of substrate reuse, predict a promising future for III-V on Si tandem solar cells, which could lead the next generation of high-efficiency and low-cost photovoltaics.In this PhD work, 2-junction (2J) AlGaAs//Si and 3-junction (3J) GaInP/AlGaAs//Si tandem solar cells were fabricated. The Si bottom subcell and the III-V top subcell(s) were joined together by wafer bonding, resulting in a 2-terminal (2T) III-V//Si solar cell configuration.Different wafer bonding techniques were studied, including an innovative bonding approach showing promising industrialization potential and thus, opening a new path for III-V on Si processing. The GaAs//Si bonding interface electrical properties were analyzed using dedicated test devices originally conceived at CEA, allowing to evaluate the interface resistance and the conduction mechanism.Experimental characterizations and simulations were performed in order to optimize the design and fabrication process, leading to record efficiencies. For the AlGaAs top subcell of the 2J, this includes the use of an AlInP window together with a GaInP emitter, forming an n-GaInP/p-AlGaAs heterojunction, which improved the short wavelength performance. In addition, the reduction of the GaAs bonding layer thickness and the use of a higher bandgap AlGaAs tunnel junction resulted in a higher transparency and a bottom subcell photocurrent improvement.For the Si bottom subcell, simulations allowed to identify the key factors that limit the performance, being the bulk lifetime the most critical characteristic in the thick Si cells used. In the case of III-V//Si interfaces, a highly doped emitter is crucial to minimize the surface recombination and maximize the open-circuit voltage, outweighing the drop in short-circuit current due to lifetime degradation. Back surface passivation is also important, specially to increase the infrared response. Different diffusion and implantation processes for the emitter formation were studied. Implantation processes showed less bulk lifetime degradation and smoother surfaces, thereby allowing bonding without chemical-mechanical planarization and thus higher doping levels at the surface.Finally, in order to correctly assess the efficiency of these III-V on Si tandem cells, a fast and low-cost current-voltage characterization method adapted for MJSC under low concentration was developed. This method does not require perfectly matched component cells and instead, Si single-junction cells with optical filters are used as pseudo-isotypes. An efficiency of 23.7% under 10 suns was demonstrated this way for the AlGaAs//Si cell, which is the highest efficiency reported to date for a 2J 2T Si-based tandem cell
Dickerson, Jeramy Ray. "Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/51793.
Full textLiebhaber, Martin Lutz [Verfasser]. "Silicon heterojunction solar cells: From conventional concepts to a singlet fission multi-exciton generating hybrid approach / Martin Lutz Liebhaber." Berlin : Freie Universität Berlin, 2017. http://d-nb.info/1129174549/34.
Full textChenche, Luz Elena Peñaranda. "Avaliação dos métodos de modelagem e parametrização de dispositivos fotovoltaicos mono e multi junção." Universidade Federal de Uberlândia, 2015. https://repositorio.ufu.br/handle/123456789/14984.
Full textThis work deals with the analysis applied to the main methodologies found in literature for estimating the properties related to the physical phenomena in photovoltaic devices (parametrization), as well as the most important mathematical models used in the calculation of operating electrical characteristics of these devices (characterization). These devices are related to the mono and multi-junction technologies, when they are exposed to a condition where the temperature and solar radiation vary. Therefore, four parametrization methods were shown, including three analytical, and five models of electrical characterization, where two of them are specifically for multi-junction devices. Thus, several case studies were proposed which defined different situations for comparing the performance of the methods evaluated. In this way, the procedures that best fit to each type of photovoltaic technology were identified. Finally, according to the results obtained in the parameterization, the method based on the Generalized Reduced Gradient (GRG) nonlinear algorithm showed greater accuracy for all case studies and for all photovoltaic devices. As for the characterization, the main advantages and disadvantages of all models were determined, highlighting Domínguez, et al. (2010) model, due to the highest robustness and wide application range.
Esta dissertação apresenta uma análise aplicada às principais metodologias encontradas na literatura que permitem determinar as propriedades físicas relativas aos fenômenos que ocorrem nos dispositivos fotovoltaicos (etapa de parametrização), assim como dos modelos matemáticos de maior importância utilizados no cálculo das características elétricas operacionais destes dispositivos (etapa de caraterização). Tais dispositivos referem-se às tecnologias mono e multi junção quando submetidos à variações de temperatura e radiação solar. Portanto, foram apresentados quatro métodos de parametrização, entre eles três analíticos e cinco modelos de caracterização elétrica, sendo dois especificamente para dispositivos multi junção. Assim, estabeleceram-se vários estudos de caso para os quais foram definidas diferentes situações que permitiram comparar o desempenho de cada um dos métodos avaliados. Em consequência, foram identificados os procedimentos que melhor se ajustaram a cada tipo de tecnologia fotovoltaica. Dessa forma, de acordo com os resultados obtidos na parametrização, a metodologia baseada na aplicação do algoritmo de Gradiente Reduzido Generalizado (GRG) não linear, demonstrou maior exatidão para todos os estudos de caso e para todos os dispositivos fotovoltaicos. Já para a caraterização, foram determinadas as principais vantagens e desvantagens entre os modelos aplicados, destacando o modelo de Domínguez, et al. (2010), que apresentou maior robustez e ampla faixa de aplicação.
Mestre em Engenharia Mecânica
Louarn, Kévin. "Etude et réalisation de jonctions tunnel à base d'hétérostructures à semi-conducteurs III-V pour les cellules solaires multi-jonction à très haut rendement." Thesis, Toulouse 3, 2018. http://www.theses.fr/2018TOU30002/document.
Full textMulti-Jonction Solar Cells (MJSCs) are leading the way of high efficiency photovoltaic devices, with conversion efficiency up to 46%. Their subcells are designed to absorb in a specific and complementary range of the solar spectrum, and are connected in series with tunnel junctions. The tandem architecture InGaP/GaAs - with bandgaps of 1.87 eV and 1.42 eV respectively - is mature and its efficiency could be enhanced by incorporating subcell(s) with bandgaps of 1 eV and/or 0.7 eV. The Molecular Beam Epitaxy (MBE) growth of such low bandgap materials has thus to be developed, as well as low-resistive tunnel junctions with good structural and optical properties. Based on the MBE growth and the simulation of GaAs tunnel junctions, we have identified interband tunneling as the predominant transport mechanism in such devices rather than trap-assisted-tunneling. The interband tunneling mechanism could be enhanced with the type II GaAsSb/InGaAs heterostructure. Using this material system, we have then demonstrated tunnel junctions with very low electrical resistivity with a limited degradation of the optical and structural properties inherently induced by the use of low band-gap and lattice-mismatched GaAsSb and InGaAs materials. Moreover, we fabricated an innovative AlInGaAs/AlGaAsSb tunnel junction as a graded buffer architecture that could be used for the incorporation of a 1 eV metamorphic subcell. We then developed and characterized InGaAsN(Bi) materials with band-gaps of ~1eV, taking advantage of in-situ wafer curvature measurements during the MBE growth to control the lattice-mismatch. Preliminary solar cells based on GaAs, 1 eV dilute nitride and metamorphic InGaAs have been fabricated and characterized validating the developed tunnel junction architectures. This work has enabled to demonstrate the potential of the type II GaAsSb/InGaAs heterostructure to meet the challenges posed by the conception and the fabrication of GaAs-based MJSCs, both for the tunnel junction and the 1 eV subcell
Vauthelin, Alexandre. "Fabrication et caractéristiques de cellules photovoltaïques multi-jonctions à base de matériaux antimoniures (III-Sb) pour applications sous fortes concentrations solaires." Thesis, Montpellier, 2018. http://www.theses.fr/2018MONTS073/document.
Full textThe development of photovoltaic conversion systems these past thirty years led to considerable improvements in terms of cost and performances. The best conversion efficiencies are currently obtained with solar concentration systems associated with multi-junction solar cells (MJSC) made of III-V materials. In this field, the record efficiency is of 46.0% under a 508-sun solar concentration with a 4-junction cell from Soitec/Fraunhofer ISE/CEA. This MJSC is composed of a tandem cell lattice-matched to GaAs wafer bonded to another tandem cell lattice-matched to InP. Although it reached high conversion efficiency, its performances are limited under solar concentration because of the wafer bonding. In the field of high solar concentrations, the record is held by Solar Junction with a monolithic triple junction GaInP/GaAs/GaInNAs cell of 0.3 cm² that reached an efficiency of 44.0% under 942 suns (direct irradiance of 942 kW/m²). Another high solar concentration efficiency record worth mentioning is held by IES-UPM with a tandem solar cell (GaInP/GaAs) that reached an efficiency of 32.6% under a concentration of 1026 suns.In this context, the work presented in this manuscript aims to evaluate the potential of a new family of III-V materials for high solar concentration applications: antimonide-based materials (III-Sb). The studied cells in this thesis are made out of GaSb and the quaternary AlxGa1-xAsySb1-y, monolithically grown by MBE (Molecular Beam Epitaxy) on a GaSb substrate. These materials, thanks to the large range of available band-gaps, represent an original and well-founded alternative to existing solar cells for high solar concentration applications.The work achieved in this thesis covers:- The electrical and optical characterization of the quaternary materials used.- The conception and designing of the cells.- The production and tuning of every technological steps in order to fabricate our solar cells (UV photolithography, etching, metal deposition,…).- The electrical and optical characterization of our fabricated solar cells (I(V), TLM, spectral response,…).- The characterization under (high) solar concentration of our cells.This work was cofounded by the University of Montpellier and the LabEx SOLSTICE
Besson, Pierre. "Compréhension des comportements électrique et optique des modules photovoltaïques à haute concentration, et développement d’outils de caractérisations adaptés." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI013/document.
Full textThe goal of this doctoral thesis is to bring answers to a better understanding of the electrical and optical behavior of CPV modules, under different operating conditions. In the first part, a study on module performance under real conditions is presented. Using an outdoor automated test bench, the sensitivity of four different CPV module technologies to most operating conditions relevant to CPV systems has been studied, namely DNI, spectrum, cell and lens temperature and clearness of the sky. In order to isolate the influence of a single operation parameter, the analysis of outdoor monitoring data from one month to two years is performed. The results show how the optical design influences the sensitivity of the electrical parameters to the mentionned operating conditions. The effect of lens temperature on cell current has been found to be maximum for the CPV module without Secondary Optical Element. Also the $V_{oc}$ thermal coefficient was found to vary between module technologies. Finally, the important variations of the fill factor for one technology underlines the need of studying non-uniformities effects on the cell performance. According to the results observed outdoors, an indoor tool was developed in order to uncorrelate outdoor parameters. A test bench that measures multi-spectral irradiance profiles, through CMOS imaging and bandpass filters in conjunction with electrical $IV$ curves, is used as a mean to visualize and characterize the effects of chromatic aberrations and nonuniform flux profiles under controllable testing conditions. The bench allows decoupling the temperatures of the Primary Optical Element and cell allowing the analyze of their respective effects on optical and electrical performance. In varying the temperature of the Primary Optical Element, the effects on electrical efficiency, focal distance, spectral sensitivity, acceptance angle, or multi-junction current matching profiles can be quantified. Calibration procedures and validation process are detailed. Finally, the developed testbench is used for analyzing the behvaior of three different CPV devices : one without Secondary Optical Element, and two with different Secondary Optical Elements. The impacts of cell position and lens temperature on the cell performance are quantified optically and electrically. The results show how these parameters modify the current density distribution of the subcells, and hence the electrical behavior of the device. They underline more specifically how spectral and spatial non-uniformities affect the cell performance for the different devices. The device without SOE shows a strong sensitivity to lens temperature and POE-cell distance, that will correspond to a decrease of energy production under real conditions of operation
Dinca, Dragos. "Development of an Integrated High Energy Density Capture and Storage System for Ultrafast Supply/Extended Energy Consumption Applications." Cleveland State University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=csu1495115874616384.
Full textZeitouny, Joya. "Advanced strategies for ultra-high PV efficiency." Thesis, Perpignan, 2018. http://www.theses.fr/2018PERP0056.
Full textThe maximum efficiency limit attainable with a single-junction PV cell is ~ 33% according to the detailed balance formalism (also known as Shockley-Queisser model), which remains far from the Carnot limit, predicting a solar to electricity efficiency upper value of 93%. The large gap between both limits is due to intrinsic loss mechanisms, including the inefficient conversion of the solar spectrum and the large discrepancy between the solid angles of absorption and emission. To overcome these losses and get closer to the Carnot limit, three different strategies are considered in this thesis: concentrated multi-junction solarcells, the combination of solar concentration and angular confinement, and hybrid PV/CSP systems. Each strategy is inherently limited by several loss mechanisms that degrade their performances. The objective of this thesis is, hence, to better understand the extent to which these strategies are likely to be penalized by these losses, and to tailor the cell properties toward maximizing their efficiencies. To address these questions, a detailed-balance model of PV cell accounting for the main loss mechanisms was developed. A genetic-algorithm optimization tool was also implemented, aiming at exploring the parameter space and identifying the optimal operation conditions. We demonstrate the uttermost importance of tailoring the electronic properties of the materials used with both multi-junction solar cells undergoing significant series resistance losses, and PV cells operating at temperature levels exceeding ambient temperature. We also investigate the extent to which series resistances losses and non-radiative recombination are likely to affect the ability of PV cells simultaneously submitted to concentrated sunlight and angular restriction of the light emitted by band-to-band recombination
Huang, Jiun-Sung, and 黃俊淞. "Numerical modeling of silicon-based single-junction and multi-junction solar cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/53030387453989508736.
Full text國立東華大學
光電工程學系
99
As the quality of life improves, the demand of energy sources of human beings also increases. However, due to the massive consumption of current energy sources on the earth, many different types of renewable energy sources have been developed. Among all the renewable projects in progress, solar energy is the most promising as a future energy technology, because it is the most abundant energy source. In this thesis, we have investigated single junction amorphous solar cells, single junction microcrystalline solar cells, and multi-junction solar cells by the computer simulation tool, Sentaurus TCAD. For an accurate simulation of microcrystalline solar cells, the simulation model considered the grain boundary. In order to absorb wider spectrum of the sun, the concept of multi-junction solar cell was introduced. For reducing the production cost of the manufacturing process, a suitable current matching point is necessary. In the micromorph solar cell, the infrared absorption of microcrystalline silicon is not strong enough. Therefore, adding another lower-bandgap material will compensate the drawback. We used Ge material as the bottom sub-cell in the triple-junction solar cell. The band gap of Ge is 0.66 eV. Therefore, there is effective absorption of infrared in the triple-junction solar cell. In this study, the two junction cell achieved a Jsc of 11.69 mA/cm2, a Voc of 1.50 V, and an efficiency of 10.59 %. Meanwhile, the triple junction achieved a Jsc of 11.30 mA/cm2, a Voc of 1.69 V, and an efficiency of 12.7 %. The results clearly indicated that an additional Ge layer could enhance the Voc of tandem solar cells.
BAI, WEN-BIN, and 白文賓. "Performance enhancement of single-junction GaAs solar cells." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/8544hv.
Full text國立臺北科技大學
光電工程系
106
In this study, the conversion efficiency of single-junction GaAs solar cells using (a) double layer (ITO/SiO2) anti-reflection and (b) metal/oxide/semiconductor (MOS) structure deposited by thermally RF-sputter were proposed and demonstrated. Optical reflectance, external quantum efficiency, dark current-voltage, and photovoltaic current-voltage of are measured and compared. Type-(a): The optical reflectance of double layer anti-reflection was simulated using TFCalcTM optical thin film software to show a low reflective spectrum at the GaAs solar cells. That in the GaAs solar cells with ITO (41 nm) and SiO2 (58 nm) double-layer anti-reflection layer exhibited the best short circuit current density enhancement, its short circuit current density enhancement (ΔJsc) of 28.43% (from 22.19 mA/cm2 to 28.50 mA/cm2) and conversion efficiency enhancement (Δη) of 30.35% (from 18.78% to 24.48%) were obtained. Type-(b): GaAs solar cells are fabricated using metal-oxide/semiconductor (MOS) structures using Al2O3 or TiO2 as a oxide films, Applying various voltages on the ITO electrode to enhance photovoltaic performance was observed, For the a case of MOS-structure cell, Al2O3/ITO, the short-circuit current density enhancement (ΔJsc) of 15.25% (from 22.69 mA/cm2 to 26.15 mA/cm2) and conversion efficiency enhancement (Δη) of 13.35% (from 18.28% to 20.72%) were obtained; and the oxide layer was TiO2 sputtered ITO transparent electrode (TiO2/ITO), the short-circuit current density enhancement (ΔJsc) of 21.09%(from 23.14 mA/cm2 to 28.02 mA/cm2) and conversion efficiency enhancement (Δη) of 22.40% (from 18.75% to 22.95%) were obtained. To study the biase effection MOS GaAs solar cell, the cell biased at -3.6 V, Jsc of 34.43 mA/cm2, and η of 26.50% foe the cell with Al2O3/ITO were obtained. Similarly, the cell with TiO2/ITO and biased at -3.6 V, Jsc of 36.64 mA/cm2 and η of 28.07% were obtained.
Wang, Jia-Jiun, and 王家濬. "Manufacturing and Analysis of Hetero-Junction Solar Cells and Single-Crystalline Solar Cells." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/71620896146909935590.
Full text華梵大學
機電工程學系博碩專班
96
Solar cells have the potential to be an important contributor to the global energy demand by the 21-st-century.The dominant topics for solar cell covered in this dissertation are (1) variation in the emitter dopant’s concentration,(2)variation in the wafer dopant’s concentration, (3)variation in the contact resistance,(4)the bifacial light source effects solar cells, (5)design and analysis micro Fresnel lens thin film. This work established a baseline model for silicon based solar cells and from this model the device physics relating to dopant’s concentration, contact resistance, bifacial light source was studied. The micro-Fresnel lens thin film was composed of Fresnel lens, the micro-Fresnel lens thin film has the capability to increase the light utility.
Chen, Da-Shin, and 陳達欣. "Optimization of Hydrogenated Amorphous Silicon Single-Junction Solar Cells." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/76430473136478895068.
Full text國立交通大學
顯示科技研究所
98
In this study, hydrogenated amorphous silicon (s-Si:H) solar cell was fabricated by plasma enhanced chemical vapor deposition (PECVD). First, we optimized condition of the deposited single layer for p-layer, i-layer and n-layer, respectively. In order to investigate film property, the optoelectronic and optical properties was measured by Fourier Transform Infrared Spectroscopy (FTIR), UV/VIS/NIR spectrometers. The property of hydrogenated amorphous silicon carbide (a-SiC:H) p-layer was measured and discussed. Comparing the photovoltaic performances of the as grown solar cell with p-layer for a-Si:H and a-SiC:H ,respectively. By using wide bandgap p-layer, the open-circuit voltage (Voc) increased from 0.75V to 0.78V with corresponding short-circuit current (Jsc) increased from 10.23mA/cm2 to 12.76mA/cm2. Post-treatment of the cell was also carried out and significant increase in the fill factor (FF), efficiency, and Voc were observed. The experiment result showed an improvement between the Ag back electrode and amorphous n-layer. Different cell area of 2×2 cm2 and 1×1 cm2 were also fabricated. A cell conversion efficiency of 8.67% was achieved for a cell area of 2×2cm2.
Shih, Zun-Hao, and 施圳豪. "The study of single and dual junction III-V solar cells." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/u43a33.
Full text中原大學
電子工程研究所
93
The object of this study is to fabricate a series interconnected GaAs and InGaP solar cells respectively and particularly focuses on optimizing the most important part of these solar cells, base layer. For semiconductor devices, the carrier concentration influences the electrical properties of the materials. Both the short-circuit current and open-circuit voltage of the solar cell decreases with increasing carrier concentration. In addition, the layer thickness is another essential issue of the output electrical characteristics of device. A thicker layer will absorb more quantity of incident light, but too thick a layer causes an increase in both series resistance and dark current, which will degenerate the performance of the device. We found the optimum values for the thickness and concentration of the device’s active layer through this study. The DJ solar cell is made up of GaAs and InGaP SJ solar cell in series connection. The current mismatching between InGaP and GaAs subcells limits the total photocurrent of the device. We took the results of the SJ solar cell experiments as the references for the DJ solar cell design and the main experiment variable was the base layer thickness of InGaP subcell. By varying base layer thickness and using laser light-bias I-V measurement, one could find the current limited cell clearly and the optimal design of the device. The current-voltage (I-V), external quantum efficiency (EQE) and thermal stability characteristics of the fabricated solar cells were measured by ISO-standard Simulator and homemade spectral response measurement system, respectively, at room and various temperatures.
Cheng, Po-Hsiang, and 鄭柏翔. "High Efficiency Single-Junction Hydrogenated Amorphous Silicon Thin-Film Solar Cells." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/05428604144234725853.
Full text國立交通大學
光電工程學系
99
In the thesis, device quality hydrogenated amorphous silicon thin film was deposited by plasma enhanced chemical vapor deposition (PECVD) with hydrogen diluted silane. This high quality intrinsic hydrogenated amorphous silicon film was served as the absorber layer in solar cells. When depositing the devices, the electrode spacing and thicknesses of p-type, intrinsic amorphous silicon carbide, intrinsic layer, and n-type amorphous silicon were optimized to be incorporated into the solar cells. Methods of bandgap profiling in the buffer layer between p-layer and i-layer as well as hydrogen plasma treatment at each interface, were applied to optimize the solar cells. As a result, a record solar cell conversion efficiency was enhanced to 9.46%.
Yang, Chun-Chieh, and 楊竣傑. "Investigation of built-in electric field in single-junction solar cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/47399584457273780620.
Full text中原大學
物理研究所
99
This thesis studied the built-in electric field of InGaP solar cells by electroreflectance(ER) measurements. With the increased bias, a decrease of the built-in electric field was found. Using current-voltage characteristics and the built-in electric field as a function of bias, we can get the information about the interface recombination velocity and minority carrier mobility. With the increased illumination power of a laser, a trend of decreasing built-in electric field was found. We fitted built-in electric field as a function of the illumiaiton power by a formula associated with the short-circuit current. Two kinds of GaAs solar cells under different illuminaiton power were measured by ER. The results show that built-in electric field in each GaAs solar cell has been reduced by increasing the illumination power. The decrease of the built-in electric field for these two solar cells was found to be different. Using a formula to fit the experiments, we found that the difference in the decrease of built-in electric fields is due to a difference of reverse saturation current.
Chen, Guan-Lin, and 陳冠霖. "Optoelectronic Properties of i-Layer Thickness Dependence Single Junction Solar Cells." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/30452104507069109923.
Full text中原大學
電子工程研究所
100
In this thesis, we reported the optoelectronic characteristics of p-i-n GaAs solar cells. We studied the optimum thickness of intrinsic layer for obtaining the highest conversion efficiency. The samples without were detected by current-voltage measurement under AM1.5G illumination that the sample with 1 nm intrinsic layer has the highest efficiency of 14.24%. Based on low temperature photoluminescence and time resolved photoluminescence measurement, localization depth in such intrinsic layer thickness was developed. The experimental result showed that both localization depth (Eloc) at 9.8 meV and radiative lifetime (τrad) at 5.3 ns were achieved the best optoelectronic performance in 1 nm intrinsic layer. It was found out that the localization formed due to Zn diffusion in n-GaAs and intrinsic layer. Different samples annealed at 650℃ with different annealing time were attained to obtain the localization depth. It was clearly revealed that the longer annealed time, leads to the deeper localization, and to the shorter life time. The ECV measurements manifest that the Zn concentrations are changed dramatically. The evidence shows clearly that the Zn presented nominally in the lower n-GaAs and i-GaAs layer, as the result of diffusion. Furthermore, it was proposed to distinguish the front surface recombination velocity from the induced defects by variation the PL intensity. From this photoluminescence measurement, the surface recombination velocity of the solar cells with the intrinsic layer 1 nm is obviously improved. As these results, the thickness of intrinsic layer indeed deeply influences the efficiency of solar cell.
Hung, Mu-Min, and 洪牧民. "Photovoltaic Characteristics of Single-Junction GaAs Solar Cells with Selective Filter Design." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/85914213125248536957.
Full text國立交通大學
光電工程研究所
103
In detailed balance model, the efficiency of single-junction solar cells can be potentially as high as 33.5% under AM 1.5G illumination. However the best state-of-the-art devices are still far lower than those figures, even the electronic quality is nearly perfect. Therefore the efficiency gap should stem from the light management inside solar cells. Recently, Alta device, Inc. has successfully fabricated a thin-film GaAs single junction solar cell with conversion efficiency of 28.8%, under 1 sun illumination, which aggregates the loss of backward emission into substrate[1]. This factor can be highly relevant to the cell’s performance, especially open-circuit voltage (Voc), and maximizing Voc is generally considered as the last mile to approach ultra-high efficiency limit. In this work, we try to quantify the Voc enhancement in GaAs solar cells by reducing emission loss. The simulation tools are RCWA simulation and photon recycling model NREL developed recently. The top structures we simulate here are different cutoff wavelength thin film selective filter of alternate TiO2 and SiO2. After our calculation, the cutoff wavelength of 840 nm can make the biggest Voc enhancement 36.4meV compared with bare one, and the structure also has excellent anti-reflection ability for maintaining high Jsc. Our results also show that using this way to enhance Voc is especially suitable for cells with ordinary material quality. Therefore, the requests of ideal top structures for solar cells’ use are not only near-perfect anti-reflection, but the ability to minimize the emission loss.
Lu, Wei-Yi, and 呂威毅. "Raman Scattering of i-Layer Thickness Dependence GaAs Single Junction Solar Cells." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/04836958785003244172.
Full text中原大學
電子工程研究所
100
In this thesis we studied the Raman scattering of p-i-n gallium arsenide (GaAs) solar cells with different thicknesses of intrinsic layer. In Raman scattering, used a spatial correlation (SC) model we can explained the correlation length (L) and asymmetry of the longitudinal-optic phonon Raman spectrum. We found the sample with 1 nm thickness of intrinsic layer had the highest correlation length and symmetry. And from current-voltage measurement under AM1.5G illumination that find the highest conversion efficiency (η) in the same sample. Different annealing times 0, 5, 10, 20, 30 and 60 seconds are held at 650 oC in the intrinsic layer 1 nm. symmetric ratio and correlation length are decreased when annealing time is kept from0 to 60 sec. To verify Zn diffusion into the i-layer and base region. We used electrochemical capacitance voltage (ECV) measurement that observe the carrier concentration increased at intrinsic layer and the base region for 60 sec when annealed the 1 nm i-layer GaAs solar cell. The details of the experimental results and the application feasibility of Raman scattering of p-i-n gallium arsenide (GaAs) solar cells with different thicknesses of intrinsic layer in this thesis.
Chih-ShanWu and 吳智善. "The Study of Concentrating Single Junction GaAs Solar Cells With Distributed Bragg Reflector." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/40319308385614694738.
Full textHung, Wei-Jie, and 洪偉傑. "Fabrication of Transparent Conductive Oxides for Single-Crystalline n-type Silicon Hetero-Junction Solar Cells." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/50732695248536570600.
Full text華梵大學
機電工程學系博碩專班
98
This paper is aimed to improve the efficiencies of silicon solar cell using semiconductor fabrication technologies. The research first adopts n-type (100) silicon wafers as substrates, and applies KOH etching in the photolithography process to form inverted pyramid structures. The density of the inverse pyramid structures is varied to investigate its impact factor on the reflectivity for the solar cells. In addition, the paper performs high-density plasma chemical vapor deposition to fabricate amorphous silicon thin films. Then, the author can study solar cells performances with single crystal / hydrogenised amorphous silicon heterojunctions, the effects of p-type amorphous silicon films deposited over p-type single crystal films, as well as the influences from p-type amorphous silicon layers and intrinsic layers. Also, the research executes ion implantation to fabricate BSF layers, which are intended to decrease the carrier recombination rate within the interfacing regions, and to improve the minority carrier collection rates. Furthermore, this research employes RF sputtering system to fabricate AZO transparent conductive thin films, and then learns the effects of adjusted processing parameters to the electrical and optical film properties. In the end, hydrogen plasma is used to perform the film post-processing, and the conductive films are then utilized as solar cell electrodes. After using a semiconductor parameter analyzer to perform a series of experimental measurements, the obtained IV curves suggest that the prototyped solar cells can obtain an open circuit voltage Voc = 0.60V, a short circuit current Jsc = 30mA/cm2, a fill factor FF of 62.08%, and an actual efficiency is about 11.13%.
Lin, Jian-Cheng, and 林建誠. "Conversion Efficiency Enhancement of Single-Junction GaAs Solar Cells Using ITO and Oxide/ITO Films." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/gzett7.
Full text國立臺北科技大學
光電工程系研究所
105
In this study, the conversion efficiency of two types single-junction GaAs solar cell using the antireflective layer of SiO2 , ITO, and SiO2/ITO deposited by thermally RF-sputter was demonstrated. The passivation, antireflection, and biasing effects to enhance the efficiency are characterized. The optical reflectance, external quantum efficiency (EQE), dark current-voltage (I-V), and photovoltaic current-voltage (J-V) are measured and compared. Type-I: Characterization of the single-junction GaAs solar cells with SiO2, ITO, and SiO2/ITO antireflective coating. (1) The bare GaAs solar cell: the open-circuit voltage (Voc) of 1.05V, short-circuit current density (Jsc) of 22.47 mA/cm2 and conversion efficiency (η) of 19.27% were obtained. (2) The GaAs solar cell with a SiO2 (92.71 nm) ARC, Voc of 1.04 V, Jsc of 25.55 mA/cm2, and η of 21.92% were obtained. (3) The GaAs solar cell with an ITO (71.36 nm) ARC, Voc of 1.05 V, Jsc of 27.47 mA/cm2, η of 23.52% were obtained. (4) The GaAs solar cell with a SiO2 (20 nm)/ITO (71.36 nm) ARC, Voc of 1.05 V, Jsc of 27.25 mA/cm2, and η of 23.48% were obtained. Type-II: Characterization of metal-oxide-semiconductor (MOS) structure GaAs solar cells with different oxide materials of SiO2 and SiNx. For MOS structure GaAs solar cell fabrication, SiNx and SiO2 dielectric thin-films are first deposited on the two bare single-junction GaAs solar cells by sputter deposition, respectively. By using photolithography and sputter deposition, the ITO electrode was then formed between the front electrodes upon the surface of dielectric film. (1) The bare GaAs solar cell, Voc of 1.00 V, Jsc of 21.91 mA/cm2, and η of 17.61% were obtained. (2) The GaAs solar cell subsequently deposited 20 nm thick SiNx, Voc of 1.004 V, Jsc of 23.36 mA/cm2, and η of 18.92% were obtained. (3) The GaAs solar cell subsequently deposited ITO transparent electrode (Named as MOS structure GaAs solar cell), Voc of 1.013 V, Jsc of 27.48 mA/cm2, and η of 22.34% were obtained. (4) The MOS GaAs solar cell biased at -3.5 V, Voc of 1.019 V, Jsc of 35.81 mA/cm2, η of 27.04% were obtained. Besides, the MOS GaAs solar cell with the oxide of SiO2, the Jsc of 26.62 mA/cm2 and 36.46 mA/cm2, the η of 21.50% and 26.64% were obtained under 0 V and -3.5 V biasing voltage.
Lin, Yi-Ping, and 林怡萍. "Investigation of Various Methods for Enhancing the Performance of a-Si:H Single-Junction Thin-Film Solar Cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/44793587546675803586.
Full text國立交通大學
光電工程學系
100
In this study, hydrogenated amorphous silicon thin-film solar cell was prepared by plasma-enhanced chemical vapor deposition (PECVD) system at 27.12 MHz. In order to improve the cell performance, different materials and structures were prepared to enhance the light absorption in the absorber active layer. First, the lower- refractive-index hydrogenated amorphous silicon nitride (a-SiNx:H) was deposited between the glass substrate and the transparent conductive oxide (TCO) layer to serve as the antireflection (AR) coatings. The performance of the devices having a-SiNx:H with the constant refractive index was compared with the devices having a-SiNx:H with the graded refractive index. The thickness of a-SiNx:H was also adjusted to optimize the performance of solar cells. By inserting 80 nm a-SiNx:H AR coating, a-Si:H single-junction cell had a relative increase of 4.8% in efficiency. Second, devices with different p-type window layers was compared. Hydrogenated microcrystalline silicon (µc-Si:H)/hydrogenated amorphous silicon cabide (a-SiCx:H) and a-SiCx:H/a-SiCx:H double p-layer structures were utilized in devices. The combination of p-layers with better optical and electrical properties was investigated to optimize the cell performance. The efficiency of a-Si:H cells having a-SiCx:H/a-SiCx:H window structure was improved from 9.1% to 9.25%. Finally, the n-doped microcrystalline silicon oxide (µc-SiOx:H(n)) was served as n-layer in solar cells. Besides, µc-SiOx:H(n)/Ag structure was used to replace a-Si:H(n)/TCO/Ag as back reflector (BR) structure. The increase in the optical reflection by the oxide layers on the back side improved the cell performance. The best conversion efficiency in this study was 10.13% with Voc=900.1 mV, Jsc=15.27 mA/cm2, FF=73.75%.
Su, Yu-Ru, and 蘇郁儒. "Simulation and Analysis of InGaN p-n Single Junction and InGaN/Si p-n Double Junction Solar Cells with Indium Composition and Thickness Dependences." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/90922207226285283126.
Full text國立高雄大學
應用物理學系碩士班
99
InxGa1-xN alloys feature a bandgap ranging from 0.7eV to 3.4eV, covering almost the entire solar spectrum. To optimize the efficiency and the best parameters of solar cells, numerical simulations of InGaN single junction and InGaN/Si double junction solar cells are conducted. The simulation modelling is important and indispensable for designing and fabricating InGaN single junction and InGaN/Si tandem solar cells. We changed the In composition and the thickness of the n- and p-InGaN to determine the short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF), conversion efficiency (η), and power maximum (Pmax). First, for InGaN single junction solar cell, the Jsc, Voc, and FF have a strong dependence on the In composition. In composition is a critical parameter to determine Jsc, Voc, FF, and η of InGaN solar cells. In0.6Ga0.4N solar cell shows the maximum η ~ 22%. The band gap of In0.6Ga0.4N is 1.42 eV and is almost the same with GaAs. When the total layer thickness is greater than 500 nm, the absorption becomes saturated and the η increases smoothly. The simulation results are congruent with this trend. Second, the p- and n-junction thickness and In composition of InGaN junction are the key point to determine the characteristics of InGaN/Si double junction solar cell. The current matching should be considered in the InGaN/Si double junction solar cells. The smaller Jsc in each junction determines the total Jsc of InGaN/Si double junction solar cell. The total Voc is the sum of the Voc in each junction of InGaN/Si double junction solar cell. Because the current matching affects the Jsc, the curves of the FF have some turning points. The η increases with increasing In content and with dramatically drops with a turning point. With 100 nm p-type InGaN junction, the In0.6Ga0.4N/Si p-n double junction solar cell has the maximum η ~37%. The enhancement of the optimal η of In0.6Ga0.4N/Si p-n double junction solar cell is ~68% higher than that of In0.6Ga0.4N single junction solar cell. The total thickness of InGaN junction must be less than 500 nm, or the most light is absorbed in the InGaN junction and Si junction can not work. The simulation results could provide the clues for optimizing the device structures and process conditions of InGaN single junction and InGaN/Si tandem solar cells.
Yu-ShuenChiu and 邱煜舜. "Study of Various Screen-Printed Pastes for Single- and Multi-crystalline Silicon Solar Cells Applications." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/jhzxfz.
Full text國立成功大學
化學系
103
A typical silicon solar cell consists of a p-n junction formed on the surface, a front ohmic contact stripe and fingers, a back contact that covers the entire back surface, and an antireflection coating on the front surface. Screen-printed solar cells are the most widely used cells in the commercial production of silicon solar cells. The key advantage of screen printing is the relative simplicity of the process in spite of its high contact resistance and high shading loss. Commercial mono- and multi-crystalline silicon solar cells use screen-printed process for depositing both the front and rear Ag paste based gridded electrodes, and Al based back whole area metal contacts. Conductive paste usually consists of four constituents: silver or aluminum powder, organic vehicle, glass frit and additive. To date, there have many researchers dedicating to improve the performance of screen-printed front contacts for mono- and multi-crystalline silicon solar cells. This thesis placed more emphasis on the study of the effects of glass frit recipe, silver powder size and temperature on properties. The experimental results show that the welding tension of the front-side electrodes printed by small size silver particle is bigger than that of the front-side electrodes printed by big size silver particles, that is to say, the front-side silver electrode printed by silver paste made of small size silver powder contact very closely with the silicon wafer and have the best welding performance. The rear-side electrode of silver paste prepared by low Tg glass frit has the largest welding tension, and the welding tension of each electrode is uniform. The Al paste/Al-Si eutectic layer/Al-P+ layer (Back-Surface-Field, BSF)/Si(100) stacked structure was obtained by firing the Al paste/Si(100) stacked substrate. A BSF layer can be formed by the regrown silicon due to large amount of Si dissolved in the Al melt. The glass frit layer was formed between the porous Al bulk and the silicon substrate interface after finished contact. Thus, it was difficult to incorporate the Al particles into the silicon substrate through higher Tg of glass frit when the stacked Al paste/Si(100) structure was co-fired at 780 oC. To achieve novel cooling technology for solar module, the performance of screen-printed SiC paste on the back side of solar cell was added. Since SiC has good thermal radiation function, thus its application on PV module can effectively enhance the heat flow from solar cell to back sheet thus increases generation of electricity.
McPheeters, Claiborne Ott. "The application of light trapping structures and of InGaAs/GaAs quantum wells and quantum dots to improving the performance of single-junction GaAs solar cells." Thesis, 2012. http://hdl.handle.net/2152/ETD-UT-2012-05-5040.
Full texttext
Hsiao, Min-Wen, and 蕭閔文. "Improvement of Microcrystalline Silicon Single-Junction and Tandem Solar Cells by Optimizing N-Type Microcrystalline Silicon and Silicon Oxide as Doped and Back Reflecting Layers." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/krs8f5.
Full textChen, Jiun-ting, and 陳俊廷. "Investigation of III-V Compounds Multi-Junction Solar Cells." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/18150150363448353023.
Full text國立成功大學
光電科學與工程研究所
95
The purpose of this research is to investigate the passivation mechanism of the window layer (AlInP) of III-V compounds multi-junction solar cells by using (NH4)2Sx solution treatment. The optical and electrical properties of the n-type AlInP layer with and without (NH4)2Sx treatment under different anti-reflection coating (ARC) materials would be analyzed. Besides, the conversion efficiency of the multi-junction solar cell, I-V characteristics (Isc,Voc), series and parallel resistances before and after the (NH4)2Sx treatment would be investigated. Furthermore, the Current-Voltage (I-V) measurement of solar cell would be compared with and without illumination after the (NH4)2Sx treatment. In this experiment, the X-ray photoelectron spectroscopy (XPS) was utilized to analyze the bonding configurations of the n-type AlInP surface before and after the (NH4)2Sx solution treatment. The XPS spectra indicates that In-S bonds can be formed on the AlInP surface after the (NH4)2Sx solution treatment. The S atoms would bond with indium dangling bonds to form In-S bonds to replace the In-O and Al-O bonds which were formed after using the selective etching solution (NH4OH/H2O2/H2O, 1:1:50). The surface state density and surface recombination rate would be reduced after the (NH4)2Sx treatment and the leakage current would be improved. In addition, the Schottky diode and temperature dependent current-voltage (I-V-T) measurements were used to analyze the passivated surface of the AlInP layer. Based on the experimental results, correlations among the bonding configuration, Schottky barrier height and I-V measurement are discussed, which provide the guidelines for the performance provement in the III-V multi-junction solar cells.