Journal articles on the topic 'SIMOX'
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Hemment, PLF, KJ Reeson, JA Kilner, and SJ Krause. "Simox bibliography." Vacuum 42, no. 5-6 (January 1991): 393–453. http://dx.doi.org/10.1016/0042-207x(91)90062-n.
Full textScanlon, P. J., P. L. F. Hemment, K. J. Reeson, A. K. Robinson, J. A. Kilner, R. J. Chater, and G. Harbeke. "Oxygen rich SIMOX?" Semiconductor Science and Technology 6, no. 8 (August 1, 1991): 730–34. http://dx.doi.org/10.1088/0268-1242/6/8/002.
Full textMargail, J. "SIMOX material manufacturability." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 74, no. 1-2 (April 1993): 41–46. http://dx.doi.org/10.1016/0168-583x(93)95011-s.
Full textVisitserngtrakul, S. "Multiply faulted defects in high-current oxygen-implanted silicon-on-insulator." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 606–7. http://dx.doi.org/10.1017/s0424820100155001.
Full textDavid Theodore, N., Peter Fejes, Mamoru Tomozane, and Ming Liaw. "TEM characterization of SiGe heterolayers grown on SIMOX." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 886–87. http://dx.doi.org/10.1017/s0424820100088749.
Full textXue Li, Ying, Xing Zhang, Yan Luo, and Yang Yuan Wang. "Photoluminescence spectroscopy of SIMOX." Journal of Non-Crystalline Solids 254, no. 1-3 (September 1999): 134–38. http://dx.doi.org/10.1016/s0022-3093(99)00438-x.
Full textIzumi, Katsutoshi. "History of SIMOX Material." MRS Bulletin 23, no. 12 (December 1998): 20–24. http://dx.doi.org/10.1557/s088376940002978x.
Full textBarklie, R. C. "Defects in SIMOX Structures." Solid State Phenomena 1-2 (January 1991): 203–9. http://dx.doi.org/10.4028/www.scientific.net/ssp.1-2.203.
Full textRavindra, N. M., S. Abedrabbo, O. H. Gokce, F. Tong, A. Patel, R. Velagapudi, G. D. Williamson, and W. P. Maszara. "Radiative properties of SIMOX." IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A 21, no. 3 (1998): 441–49. http://dx.doi.org/10.1109/95.725208.
Full textGuerra, M., V. Benveniste, G. Ryding, D. H. Douglas-Hamilton, M. Reed, G. Gagne, A. Armstrong, and M. Mack. "Oxygen implanter for simox." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 6, no. 1-2 (January 1985): 63–69. http://dx.doi.org/10.1016/0168-583x(85)90611-1.
Full textIzumi, Katsutoshi. "Historical overview of SIMOX." Vacuum 42, no. 5-6 (January 1991): 333–40. http://dx.doi.org/10.1016/0042-207x(91)90050-s.
Full textDaniel Chen, CE. "SIMOX devices and circuits." Vacuum 42, no. 5-6 (January 1991): 383–86. http://dx.doi.org/10.1016/0042-207x(91)90058-q.
Full textVan Ommen, A. H. "New trends in SIMOX." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 39, no. 1-4 (March 1989): 194–202. http://dx.doi.org/10.1016/0168-583x(89)90770-2.
Full textStoemenos, J. "Structural defects in SIMOX." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 112, no. 1-4 (May 1996): 206–13. http://dx.doi.org/10.1016/0168-583x(95)01237-0.
Full textTan, Yan, Benedict Johnson, Supapan Seraphin, and Maria J. Anc. "Defect Dynamics in Simox Structures as a Function of the Annealing Parameters." Microscopy and Microanalysis 6, S2 (August 2000): 1086–87. http://dx.doi.org/10.1017/s1431927600037922.
Full textFerro, G., N. Planes, V. Papaioannou, D. Chaussende, Y. Monteil, Y. Stoemenos, and J. Camassel. "Role of SIMOX defects on the structural properties of β-SiC/SIMOX." Materials Science and Engineering: B 61-62 (July 1999): 586–92. http://dx.doi.org/10.1016/s0921-5107(98)00480-2.
Full textWilson, T., J. Jiao, S. Seraphin, B. Johnson, M. Anc, and B. Cordts. "Effects of Protective Capping on Ultra-Thin SIMOX Structures." Microscopy and Microanalysis 5, S2 (August 1999): 744–45. http://dx.doi.org/10.1017/s1431927600017049.
Full textWeiss, B. L., G. T. Reed, S. K. Toh, R. A. Soref, and F. Namavar. "Optical waveguides in SIMOX structures." IEEE Photonics Technology Letters 3, no. 1 (January 1991): 19–21. http://dx.doi.org/10.1109/68.68035.
Full textNakashima, S., and K. Izumi. "Surface morphology of SIMOX wafers." Electronics Letters 25, no. 2 (1989): 154. http://dx.doi.org/10.1049/el:19890112.
Full textGeatches, R. M., K. J. Reason, A. J. Griddle, R. P. Webb, P. J. Pearson, P. L. F. Hemment, and A. Nejim. "Nondestructive characterization of SIMOX structures." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 84, no. 2 (February 1994): 258–64. http://dx.doi.org/10.1016/0168-583x(94)95766-5.
Full textKögler, Reinhard, A. Mücklich, W. Anwand, F. Eichhorn, and Wolfgang Skorupa. "Defect Engineering for SIMOX Processing." Solid State Phenomena 131-133 (October 2007): 339–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.339.
Full textGiordana, Adriana, R. Glosser, Keith Joyner, and Gordon Pollack. "Photoreflectance Studies of SIMOX Materials." Journal of Electronic Materials 20, no. 11 (November 1991): 949–58. http://dx.doi.org/10.1007/bf02816038.
Full textAllen, Lisa P., Theodore H. Smick, and Geoffrey Ryding. "SIMOX Research, development, and manufacturing." Journal of Electronic Materials 25, no. 1 (January 1996): 93–97. http://dx.doi.org/10.1007/bf02666180.
Full textGriffin, CJ, and JA Kilner. "The evolution of SIMOX dislocations." Vacuum 42, no. 5-6 (January 1991): 389. http://dx.doi.org/10.1016/0042-207x(91)90060-v.
Full textSteigmeier, E. F., G. Harbeke, K. J. Reeson, P. L. F. Hemment, and A. K. Robinson. "Nondestructive assessment of SIMOX substrates." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 37-38 (February 1989): 304–7. http://dx.doi.org/10.1016/0168-583x(89)90191-2.
Full textYoshino, A., K. Kasama, and M. Sakamoto. "Oxygen-redistribution process in SIMOX." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 39, no. 1-4 (March 1989): 203–6. http://dx.doi.org/10.1016/0168-583x(89)90771-4.
Full textLee, June-Dong, Stephen Krause, and Peter Roitman. "Formation of stacking-fault tetrahedra in low defect density oxygen-implanted silicon-on-insulator material." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1402–3. http://dx.doi.org/10.1017/s0424820100131644.
Full textOhler, M., S. Köhler, and J. Härtwig. "X-ray diffraction moiré topography as a means to reconstruct relative displacement fields in weakly deformed bicrystals." Acta Crystallographica Section A Foundations of Crystallography 55, no. 3 (May 1, 1999): 423–32. http://dx.doi.org/10.1107/s0108767398010794.
Full textRoitman, P., D. S. Simons, Supapan Visitserngtrakul, C. O. Jung, and S. J. Krause. "Effect of annealing ambient on the precipitation processes in oxygen-implanted silicon on-insulator material." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 644–45. http://dx.doi.org/10.1017/s0424820100176356.
Full textKrause, S. J., C. O. Jung, and S. R. Wilson. "Precipitation in silicon-on-insulator material during high- temperature annealing." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 254–55. http://dx.doi.org/10.1017/s0424820100126172.
Full textIikawa, H., M. Nakao, and K. Izumi. "Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation." Journal of Materials Research 19, no. 12 (December 1, 2004): 3607–13. http://dx.doi.org/10.1557/jmr.2004.0455.
Full textNejim, A., P. L. Hemment, and J. Stoemenos. "High temperature carbon implantation in SIMOX." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 120, no. 1-4 (December 1996): 129–32. http://dx.doi.org/10.1016/s0168-583x(96)00494-6.
Full textLam, H. W. "SIMOX SOI for integrated circuit fabrication." IEEE Circuits and Devices Magazine 3, no. 4 (July 1987): 6–11. http://dx.doi.org/10.1109/mcd.1987.6323126.
Full textMayo, Santos, Jeremiah R. Lowney, Peter Roitman, and Donald B. Novotny. "Persistent photoconductivity in SIMOX film structures." Journal of Applied Physics 68, no. 7 (October 1990): 3456–60. http://dx.doi.org/10.1063/1.346356.
Full textVogt, H., G. Burbach, J. Belz, and G. Zimmer. "MESFETs in thin silicon on SIMOX." Electronics Letters 25, no. 23 (1989): 1580. http://dx.doi.org/10.1049/el:19891061.
Full textBhar, T. N., R. J. Lambert, and H. L. Hughes. "Electron trapping in SI implanted SIMOX." Electronics Letters 34, no. 10 (1998): 1026. http://dx.doi.org/10.1049/el:19980626.
Full textNayak, D. K., J. C. S. Woo, G. K. Yabiku, K. P. MacWilliams, J. S. Park, and K. L. Wang. "High-mobility GeSi PMOS on SIMOX." IEEE Electron Device Letters 14, no. 11 (November 1993): 520–22. http://dx.doi.org/10.1109/55.258002.
Full textMartin, E., J. Jiménez, A. Pérez-Rodrígues, and J. R. Morante. "Raman characterization of SOI-SIMOX structures." Materials Letters 15, no. 1-2 (October 1992): 122–26. http://dx.doi.org/10.1016/0167-577x(92)90026-g.
Full textGuerra, M., B. Cordts, T. Smick, R. Dolan, W. Krull, G. Ryding, M. Alles, and M. Anc. "Manufacturing technology for 200mm SIMOX Wafers." Microelectronic Engineering 22, no. 1-4 (August 1993): 351–54. http://dx.doi.org/10.1016/0167-9317(93)90185-8.
Full textAnc, M. J., and W. A. Krull. "Sources of SIMOX buried oxide leakage." Microelectronic Engineering 28, no. 1-4 (June 1995): 407–10. http://dx.doi.org/10.1016/0167-9317(95)00085-m.
Full textColinge, Jean-Pierre. "The development of CMOS/SIMOX technology." Microelectronic Engineering 28, no. 1-4 (June 1995): 423–30. http://dx.doi.org/10.1016/0167-9317(95)00089-q.
Full textJeoung, Jun Sik, Benedict Johnson, and Suṗapan Seraphin. "Growth of Oxygen Precipitates in Low-Dose Low-Energy Simox." Microscopy and Microanalysis 7, S2 (August 2001): 562–63. http://dx.doi.org/10.1017/s1431927600028889.
Full textChen, Meng, Yuehui Yu, Xi Wang, Xiang Wang, Jing Chen, Xianghua Liu, and Yeming Dong. "Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match." Journal of Materials Research 17, no. 7 (July 2002): 1634–43. http://dx.doi.org/10.1557/jmr.2002.0241.
Full textGuss, B., S. Seraphin, and B. F. Cordts. "TEM Analysis of Defects in Simox Silicon-On-Insulator Material." Microscopy and Microanalysis 3, S2 (August 1997): 473–74. http://dx.doi.org/10.1017/s1431927600009259.
Full textKrause, Steve, Maria Anc, and Peter Roitman. "Evolution and Future Trends of SIMOX Material." MRS Bulletin 23, no. 12 (December 1998): 25–29. http://dx.doi.org/10.1557/s0883769400029791.
Full textMiyatake, Hiroshi, Yasuo Yamaguchi, Yoji Mashiko, Tadashi Nishimura, and Hiroshi Koyama. "Microstructure of high temperature annealed SIMOX wafer." Applied Surface Science 41-42 (January 1990): 643–46. http://dx.doi.org/10.1016/0169-4332(89)90136-0.
Full textRivera, A., A. van Veen, H. Schut, J. M. M. de Nijs, and P. Balk. "Interaction of deuterium with SIMOX buried oxide." Microelectronic Engineering 59, no. 1-4 (November 2001): 497–501. http://dx.doi.org/10.1016/s0167-9317(01)00664-5.
Full textLiu, S. T., and L. P. Allen. "Back channel uniformity of thin SIMOX wafers." IEEE Transactions on Nuclear Science 38, no. 6 (1991): 1271–75. http://dx.doi.org/10.1109/23.124104.
Full textJung-Hyeon Park, Hyung-Il Lee, Heung-Sik Tae, Jeung-Soo Huh, and Jung-Hee Lee. "Lateral field emission diodes using SIMOX wafer." IEEE Transactions on Electron Devices 44, no. 6 (June 1997): 1018–21. http://dx.doi.org/10.1109/16.585560.
Full textDouseki, T., S. Shigematsu, J. Yamada, M. Harada, H. Inokawa, and T. Tsuchiya. "A 0.5-V MTCMOS/SIMOX logic gate." IEEE Journal of Solid-State Circuits 32, no. 10 (1997): 1604–9. http://dx.doi.org/10.1109/4.634672.
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