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Yang, Hong. "Microstructural development of simox and simox related materials." Thesis, University of North Texas, 1993. https://digital.library.unt.edu/ark:/67531/metadc798205/.
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A novel structure related to Seperation by Implanted Oxygen (SIMOX) of NiSi2/SiO2/Si is studied for two primary reasons: the importance of metal silicide and insulating oxide in IC devices and the difficulty of direct growth of crystalline silicide on amorphous substrates.
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Krska, Jee-Hoon Yap. "SIMOX buried-oxide conduction mechanisms." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/10309.
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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.Includes bibliographical references (leaves 141-149).
by Jee-Hoon Yap Krska.
Ph.D.
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Dalponte, Mateus. "Junções rasas em Si e SIMOX." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2004. http://hdl.handle.net/10183/7638.
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Foi estudado o comportamento do As (dopante tipo n) em dois tipos diferentes de substratos de Si: bulk e SIMOX (Separation by IMplanted OXygen). Ambos os substratos receberam uma implantação de 5x1014 cm-2 de As+ com energia de 20 keV. Após as implantações, as amostras foram recozidas por um dos dois processos a seguir: recozimento rápido (RTA, Rapid Thermal Annealing) ou convencional (FA, Furnace Annealing). A caracterização física e elétrica foi feita através do uso de diversas técnicas: SIMS (Secondary Ion Mass Spectrometry), RBS (Rutherford Backscattering Spectrometry), MEIS (Medium Energy Ion Scattering), medidas de resistência de folha, medidas Hall e medidas de perfil de portadores por oxidação anódica. Na comparação entre os substratos SIMOX e Si bulk, os resultados indicaram que o SIMOX se mostrou superior ao Si bulk em todos os aspectos, ou seja, menor concentração de defeitos e menor perda de dopantes para a atmosfera após os recozimentos, maior concentração de portadores e menor resistência de folha. A substitucionalidade do As foi maior no SIMOX após RTA, mas semelhante nos dois substratos após FA. Na comparação entre RTA e FA, o primeiro método se mostrou mais eficiente em todos os aspectos mencionados acima. As explicações para o comportamento observado foram atribuídas à presença de maior concentração de vacâncias no SIMOX do que no Si bulk e à interação destas vacâncias com os dopantes.
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Oliveira, Roana Melina de. "Dopagem tipo-n em estruturas SIMOX." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2007. http://hdl.handle.net/10183/11793.
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Foram estudadas a ativação elétrica e a redistribuição de As (dopante tipo n) implantado em SIMOX (Separation by IMplanted OXygen). Estruturas SIMOX com diferentes espessuras da camada superficial de Si e do óxido enterrado foram usadas. As implantações de As+ foram feitas com a energia de 20 keV e doses de 5x1014cm-2 ou 2x1015cm-2. Um perfil em forma de platô foi implantado em algumas amostras por implantação com tripla energia. Recozimentos térmicos rápidos e convencionais foram aplicados para a ativação dos dopantes e cobertura dos danos de implantação. A caracterização física e elétrica foi feita através de RBS (Rutherford Backscattering Spectrometry), TEM (Transmission Electron Microscopy), MEIS (Medium Energy Ion Scattering) e medidas elétricas por efeito Hall. Os resultados são discutidos considerando a profundidade de amorfização alcançada pela implantação de dopantes e a cobertura dos danos após recozimentos e sua influência na ativação elétrica dos dopantes.As amostras completamente amorfizadas apresentaram maiores valores de resistência de folha e menor percentagem de ativação dos dopantes em comparação com as amostras que não tiveram a completa amorfização do filme de Si. Os resultados mostram claramente a necessidade de evitar a amorfização total do filme de Si em SIMOX durante a implantação iônica, possibilitando a formação de uma boa estrutura cristalina com boas características elétricas após o recozimento.The re-crystallization and electrical activation of As (n-type dopant) implanted in SIMOX (Separation by IMplanted OXygen) were studied. Two SIMOX structures with different Si overlayers and buried oxide thicknesses were used. The As+ implantations were performed with energy of 20 keV to doses of 5x1014cm-2 or 2x1015cm-2 in both substrates. A plateau-like profile was achieved in an additional set of SOI samples by triple energy implantation. Rapid thermal and conventional furnace annealing were applied for dopant activation and recovery of the implantation damage. The physical and electrical characterizations were done by RBS (Rutherford Backscattering Spectrometry), TEM (Transmission Electron Microscopy), MEIS (Medium Energy Ion Scattering), sheet resistance measurements and Hall Effect measurements. The results are discussed considering the amorphization depth reached by dopant implantation and the crystal recovery process via thermal treatment and the influence in the electrical activation of the dopants. The completely amorphized samples presented higher values of sheet resistance and lower electrical activation percentage compared with the samples that did not have the complete top Si film amorphized. These results clearly show the need for avoiding total amorphization of the Si film during ion implantation in SIMOX, so that it is possible to achieve good crystal and electrical characteristics after thermal processing.
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Yoon, Jung Uk 1971. "SIMOX BOX metrology : using physical and electrical characterization." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/32682.
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Lourenco, Manon d'Assuncao. "Evaluation of SIMOX substrates using photoconductive frequency resolved spectroscopy." Thesis, University of Surrey, 1991. http://epubs.surrey.ac.uk/776189/.
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Yoon, Jung Uk 1971. "Metrology of SIMOX buried oxide and nitride/STI CMP." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/50518.
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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.Includes bibliographical references (leaves 149-154).
The increase in demand for faster and more powerful microprocessors in recent years has been the driving force to introduce new materials and processes into semiconductor fabrication facilities. As each fabrication facility tries to maximize its yield, it is mandatory that there exist metrology techniques to characterize both materials and processes. This mandate is the motivation behind this thesis. In this thesis, the metrology of two different systems used in VLSI technology are investigated. The first system is the material, Separation by IMplanted OXygen (SIMOX) buried oxide. SIMOX technology has been studied extensively as a viable alternative to bulk silicon technology in radiation-hard and low-power applications. However, there is still a lack of knowledge on the nature of the defects present in the SIMOX buried oxide and their impact on basic BOX electrical characteristics, such as BOX high-field conduction. In this thesis, greater understanding about the excess-silicon related defects in the buried oxide has been obtained concerning their nature, origin, and impact on the conduction characteristics. Further understanding about the silicon islands in the buried oxide has also been obtained concerning their formation and impact on the high-field conduction characteristics. Finally, a metrological application of the BOX high-field conduction model is demonstrated. The second system is the process, Nitride/Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP). CMP processes have been heralded as a way to planarize films and structures on wafers to a degree which has not been possible before. However, recent studies have shown that the uniformity of CMP processes depends on the layout-pattern density. To address this issue, an oxide CMP model has been developed to show the relationship between layout-pattern density and the polish rate. However, there is an uncertainty as to how this single-material system model can be extended to other material systems and dual-materials systems. In this thesis, the metrology and modeling techniques for oxide CMP are extended to nitride CMP in order to understand the pattern-density and materials dependence for this particular CMP process. In addition, the planarization and uniformity of the two-material system for STI structures is investigated. A model explaining the relationship between a particular STI layout-pattern density and the resulting planarization is developed.
by Jung Uk Yoon.
Ph.D.
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Jeoung, Jun Sik. "Structural and electrical characterization of low-dose low-energy SIMOX materials." Diss., The University of Arizona, 2004. http://hdl.handle.net/10150/280614.
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The effects of implantation dose, energy, and annealing conditions on the microstructure and the formation and evolution of defects in the low-dose, low-energy SIMOX materials were investigated using transmission electron microscopy (TEM), scanning electron microscopy, scanning electron microscopy (SEM), optical microscopy secondary ion mass spectroscopy (SIMS), and Rutherford backscattering spectrometry (RBS). The quality of top Si layer and buried oxide layer (BOX) was also characterized with the electrical measurements. From the structural characterization of 100 keV implanted samples, it was found that the optimum dose window to form a continuous BOX layer after annealing was 3.0 to 3.5 x 10¹⁷ O⁺/cm². In addition, the formation mechanisms of dislocations and stacking faults in SIMOX materials were also proposed. The Hg-based pseudo-MOSFET technique was a very effective in-situ technique to evaluate the electrical quality of low-dose low-energy SIMOX. Based on the comparisons of device parameters of low-dose low-energy SIMOX and commercial SIMOX samples, we found that the quality of top Si layer of SIMOX sample prepared at 100 keV with a dose of 3.5 x 10¹⁷ O⁺/cm² was excellent. However, the interface properties (interfacial trap density) needed to be improved. The dielectric quality of low-dose low-energy SIMOX evaluated by breakdown voltage measurements showed a strong dependency on the microstructure of samples.
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Seifouri, Mahmood. "Devices for integrated optics produced in GaAs/GaAlAs anf Simox materials." Thesis, Cardiff University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.327938.
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Ngwa, Chrisantus Soh. "Electrical characterisation of SIMOX SiOâ†2 for silicon-on-insulator technology." Thesis, University of Liverpool, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.263706.
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Giles, Luis Felipe. "Characterization and control of crystallographic defects in thin film SIMOX materials." Thesis, University of Surrey, 1994. http://epubs.surrey.ac.uk/844322/.
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Crystallographic defects present in the silicon over layer of thin (< 1000 A) SIMOX material have been characterized using a newly developed etchant and by transmission electron microscopy. Rutherford backscattering spectroscopy has also been used to determine the chemical composition and thickness of the synthesised layers. The thin SIMOX layers were produced by two different methods, namely (i) sacrificial oxidation of the silicon over layer of thick (2000 A) SIMOX films and (ii) low energy O+ implantation. The main crystallographic defects present in materials prepared by sacrificial oxidation are threading dislocations and oxidation induced stacking faults (OISF) whose density and size depends mainly upon the oxidation conditions (temperature, time) and also on the number of nucleation sites present before oxidation. The nucleation of these OISF has been investigated and it has been observed that stacking fault (SF) complexes are the main nucleation sites. The density of threading dislocations within the Si over layer does not increase during oxidation. The lowest density of OISF (5.0x102 cm-2) was observed in layers thinned by dry oxidation although some layers contained up to 5.0x105 cm-2. This difference in OISF densities was attributed to differences in the densities of the SF complexes before oxidation. Thin film SIMOX structures formed by low energy implantations also contain two principal defect types namely, threading dislocations and stacking fault complexes, where the densities depend upon the implantation and annealing conditions, A low density of threading dislocations is only obtained when parameters, such as dose and implantation temperature are optimised. Furthermore, it is also observed that thermal and mechanical stresses produced in the silicon over layer during implantation or annealing, need to be minimised in order to obtain low defect density material. It has been shown by whole wafer defect mapping of six inch SIMOX wafers implanted under optimised conditions, that a uniform distribution of defects can be achieved, having an average defect density as low as 1.0x104 cm-2. Additionally, the effects of implantation damage on the formation of secondary defects have also been investigated. The results have shown that the coalescence of point defects generated during implantation produce a high density of dislocation loops that, depending upon the annealing treatment, develop into threading dislocations or OISF. These experiments confirm that careful optimisation of the processing conditions, such as implantation temperature and dose uniformity, can significantly reduce defect densities thus enhancing the prospect of thin film SIMOX as a suitable substrate for fully depleted MOS devices.
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Trui, Bernhard. "Untersuchungen zu CMOS-kompatiblen Bauelementen mit SiGe-Si-Heterostrukturen auf SIMOX-Substraten." [S.l. : s.n.], 2000. http://deposit.ddb.de/cgi-bin/dokserv?idn=960863303.
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Jutarosaga, Tula. "Formation and Electrical Properties of Buried Oxide Layers in Thin Simox Materials." Diss., The University of Arizona, 2006. http://hdl.handle.net/10150/193603.
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The effects of implantation conditions and annealing conditions on the formation of buried oxide layers in the low-dose low-energy SIMOX materials were investigated using transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), electron paramagnetic resonance spectroscopy (EPR). The electrical properties of the buried oxide layers were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements.The distribution of oxygen and defects in the as-implanted materials due to the implantation conditions (oxygen dose and energy) had significant effects on the formation of the buried oxide layer in low-dose low-energy SIMOX substrates. Multiply faulted defects (MFDs) and small oxide precipitates were observed in the projection range (Rp) in as-implanted samples. As increasing the dose, the mixture of silicon and oxide (silicon striations) also formed around Rp. The locations and shapes of the silicon striations control the density and size of silicon islands in the fully-annealed SIMOX at 1350oC.Upon annealing, the buried oxide layers become stoichiometric. Also, different domains including round, square, and pyramid shapes with the step-terrace structure were observed at the top silicon and buried oxide interface. Round domains are observed in the early stage of the annealing process, while the square and pyramid domains are observed after the high temperature annealing. The mean RMS roughness decreases with increasing time and annealing temperature and decreases with either increasing the implantation dose or decreasing implantation energy. Qualitative mechanisms of Si-SiO2 surface flattening are presented in terms of the variations of morphological features with the processing conditions.In the fully-annealed SIMOX wafers, the silicon pipes and silicon islands were observed in the sample implanted with the dose below 3.0×1017 O+/cm2 and above 3.5×1017 O+/cm2, respectively for the samples implanted at 100 keV. The presence of silicon pipes and islands degrades the quality of the buried oxide layer by reducing the breakdown field strength. It was found that proper annealing ambient and ramping rates would allow the formation of the buried oxide layer containing no silicon island. By controlling the oxygen content in the ambient, the growth of the buried oxide can be enhanced.
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Margail, Jacques. "Réalisation de structures silicium sur isolant (SSI) par implantation d'ions oxygène SIMOX /." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37607716c.
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Margail, Jacques. "Réalisation de structures silicium sur isolant (SSI) par implantation d'ions oxygène : simox." Grenoble INPG, 1987. http://www.theses.fr/1987INPG0028.
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L'implantation d'oxygene a fortes doses devient un candidat tres serieux pour la realisation de structures silicium sur isolant (ssi). L'etude des conditions de fabrication de ces substrats a permis de mettre en evidence l'importance des parametres d'implantation et de recuit pour la microstructure, et en particulier pour la qualite cristalline du film de silicium. Nous avons montre que l'utilisation des recuits a haute temperature (t>1300**(o)c), conduit a des substrats ssi d'excellente qualite: 1) film de silicium monocristallin et denude de tout precipite, a l'echelle de la plaquette. 2) formation d'interfaces si/sio::(2), tres abrupts. Apres recuit a 1340**(o)c, des mobilites hall de 1250cm**(2). V**(-1). S**(-1) ont ete mesurees dans le film de silicium, et son dopage residuel est tres faible (quelques 10**(15)cm**(-3)). Les premieres caracteristiques de transistors et les performances de circuits cmos submicroniques, attestent de la qualite electrique de ces substrats
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Ouisse, Thierry. "Modèles physiques et analyse du fonctionnement des composants MOS intégrés sur SIMOX." Grenoble INPG, 1991. http://www.theses.fr/1991INPG0090.
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Ce memoire est consacre a la caracterisation et la modelisation des composants mos des technologies silicium sur isolant (soi). Le premier chapitre contient une description generale des differentes technologies soi et rappelle l'interet de telles structures pour la microelectronique, puis nous nous concentrons sur le materiau simox. Nous developpons une analyse des effets de couplage electrique intervenant entre les diverses interfaces des transistors mos soi totalement desertes. Nous proposons ensuite une approche analytique originale des phenomenes d'hysteresis et de conductance/transconductance negative apparaissant dans les transistors mos soi partiellement desertes. Nous developpons l'analogie formelle existant entre ces effets de substrat flottant et une transition de phase. L'application de la technique de pompage de charge aux structures soi est decrite en detail, et la mise en evidence de phenomenes specifiques permet de clarifier les conditions optimales d'utilisation. Les deux derniers chapitres traitent des mecanismes physiques de degradation des transistors mos soi. Nous etudions d'abord les effets d'une injection de porteurs chauds puis ceux d'un rayonnement ionisant. Nous mettons ainsi en evidence la structure physique particuliere de l'oxyde enterre obtenu par implantation d'oxygene
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Clark, Stewart Andrew. "Characterisation and efficient simulation of thermal phenomena in SIMOX thermo-optic phase modulators." Thesis, University of Strathclyde, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366852.
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Dalponte, Mateus. "Redistribuição e ativação de dopantes em Si com excesso de vacâncias." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2008. http://hdl.handle.net/10183/15397.
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A redistribuição e ativação elétrica dos dopantes tipo n (As e Sb) e tipo p (Ga e In) em Si com excesso de vacâncias foram analisadas. As vacâncias foram geradas por implantação iônica de altas doses de oxigênio ou nitrogênio em alta temperatura, de acordo com procedimentos já estudados. Em seguida foram implantados os dopantes com dose de 5x1014 cm-2 a 20 keV na região rica em vacâncias. Dopagens idênticas foram realizadas em amostras de Si sem vacâncias e em SIMOX. Em seguida foram feitos recozimentos a 1000ºC por 10 s ou 15 min. Os perfis atômicos dos dopantes foram medidos com Medium Energy Ion Scattering e os perfis dos dopantes ativados, com Hall diferencial. A redistribuição e as propriedades elétricas de cada um dos dopantes no Si sem vacâncias foram bastante similares às observadas no SIMOX, porém várias diferenças foram observadas em relação às amostras com excesso de vacâncias. As vacâncias reduziram a ativação elétrica do As e do Sb, mas proporcionaram maior estabilidade da ativação após recozimentos longos. A redistribuição destes dopantes foi infuenciada pelo íon usado na geração das vacâncias, ou seja, nitrogênio ou oxigênio. O oxigênio proporcionou maior dose retida de As e o nitrogênio, maior dose retida de Sb. Já para o Ga e o In, as vacâncias tiveram papel fundamental na sua redistribuição, diminuindo a difusão para fora das amostras e garantindo maior dose retida. A ativação elétrica do Ga e especialmente a do In foram baixas, onde observamos forte influência do íon pré-implantado, principalmente o oxigênio.The redistribution and electrical activation of n type (As and Sb) and p type (Ga and In) dopants in Si with excess vacancy concentration were analyzed. The vacancies were formed by high dose ion implantation of oxygen or nitrogen at high temperature, following previously studied procedures. Dopants were implanted to a dose of 5x1014 cm-2 at 20 keV in the vacancy rich regions of the samples. Identical doping implantations were performed in bulk Si and SIMOX. Samples were then submitted to thermal annealing at 1000ºC for 10 s or 15 min. The dopants atomic profiles were obtained by Medium Energy Ion Scattering and the active dopant profiles, by differential Hall measurements. The redistribution and the electrical properties of each dopant in bulk Si were similar to those observed in SIMOX, but several differences were observed in the vacancy-rich samples. Vacancies reduced the electrical activation of As and Sb, although the activation was maintained stable after long annealing times. The redistribution of these dopants was, otherwise, dominated by the ion used in the vacancy generation, i.e., nitrogen or oxygen. The presence of oxygen resulted in larger As retained dose, while the presence of nitrogen, in larger Sb retained dose. Regarding the p type dopants, Ga and In, the vacancies played an important role in their redistribution, reducing their out-diffusion and allowing larger retained doses. Ga and especially In electrical activation was low, where strong influence of the pre-implanted ions was observed, especially oxygen.
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Hatzopoulos, Nikos. "Development and application of FTIR reflectance spectroscopy for the characterisation of novel SIMOX structures." Thesis, University of Surrey, 1996. http://epubs.surrey.ac.uk/843954/.
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The purpose of this project has been twofold: firstly, to develop further FTIR reflectance spectroscopy as a technique for the quantitative characterisation of SOI multilayer structures and secondly, to use it in combination with other techniques, such as RBS/Channelling, XTEM, SIMS, AES and SRP, to investigate the evolution and structure of novel SOI materials. In order to evaluate the FTIR results, many SIMOX samples were fabricated with a wide range of Si and buried SiO2 layer thicknesses with one or two buried oxide layers. The FTIR results are compared to those obtained with the other experimental techniques and with theoretical calculations. We show that, given an "a priori" knowledge of the structure which is used to define the initial structural model, FTIR can be used as a non-destructive, fast, and inexpensive control method for characterising SOI structures. FTIR offers +/-2 nm accuracy in layer thicknesses and +/-5 nm in interfacial region thicknesses, over a wide (0.5 to >10mum) depth range, while for shallower depths an error of 15% on average is likely. FTIR gives Si thickness values which are within 5%, and buried layer or interfacial region thickness values which are within 10% to 20%, from the values obtained by other techniques. The sensitivity to oxygen content variations is down to 5 x 1020 O cm-3 for the top of a Gaussian profile, and 1 X 1022 O cm-3 over a 20 nm thick layer. FTIR gives a value for the retained dose within 5% of the nominal dose for both unannealed and annealed samples. Novel SOI materials, such as deep buried oxide layers and double SIMOX structures were fabricated and characterised, and the processing parameters optimised. We show that, for 2 MeV oxygen implantation into Si at 700°C to a dose of 2 x 1018 O+ cm-2 and after annealing at 1300°C for 6 hours, a buried layer is formed which is continuous but contains Si islands. It is found that by increasing the annealing time to 12 hours, the homogeneity of the buried layer is improved. We propose that an increase of both the oxygen dose and the annealing temperature would result in a higher quality buried oxide layer. The adverse effect of high beam current densities to the sample structure after annealing is demonstrated for the high energy SIMOX samples. We show that double SIMOX structures can be fabricated by a three step process, with one only annealing step at the end. Such structures can be used for Si waveguiding applications and we present preliminary results of waveguiding loss measurements, where a value of 18 dB/cm was obtained.
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Reis, Roberto Moreno Souza dos. "Síntese de SiC por implantação iônica de carbono em SIMOX(111) e Si(111)." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2009. http://hdl.handle.net/10183/16135.
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SiC é um semicondutor promissor para dispositivos eletrônicos de alta-potência, alta-freqüência e alta temperatura e a síntese de uma camada epitaxial de SiC por implantação, na superfície do Si, pode ser uma via de integração com a tecnologia de Si. Implantação em alta temperatura (600°C) através de uma capa de SiO2, recozimento pós-implantação a 1250°C sob um ambiente de Ar (com 1% de O2) e ataque químico são a base da presente síntese. Implantações à energia de 40 keV foram executadas em substratos SIMOX(111) e Si(111), cobertos com uma capa de 100 nm de SiO2. Implantação em SIMOX foi o foco principal. Isto nos permitiu obter uma camada sintetizada de SiC separada do Si bulk e analisar as conseqüências estruturais. Neste caso, foi produzida a conversão da camada superior de 65 nm de Si superior da estrutura SIMOX em 30-45 nm de SiC. Implantações seqüenciais de C (passos de fluências de ~ 5 × 1016 C/cm2), seguidas por recozimento à 1250°C, permitiu estimar as fluências mínimas de C para atingir a estequiometria como 2,3 × 1017 C/cm2 e 2,8 × 1017 C/cm2, quando implantado em SIMOX e em Si, respectivamente. Espectrometria de Retroespalhamento de Rutherford (RBS) foi empregada para medir a evolução composicional da camada. Pela análise das implantações seqüenciais, foi possível compreender a redistribuição de carbono durante a implantação e recozimento. Uma estrutura de duas camadas é observada no SiC sintetizado separado do Si bulk, sendo a camada superficial mais rica em Si. Microscopia Eletrônica de Transmissão (TEM) mostrou que as camadas sintetizadas são sempre cúbicas e epitaxiais à estrutura original do Si. TEM também mostrou que as implantações diretas, até as fluências mínimas, resultam em uma melhor qualidade estrutural. Para uma fluência muito mais alta (4 × 1017 C/cm2), uma camada completamente estequiométrica é obtida, com redução na qualidade estrutural. Nossos resultados indicam que o excesso de carbono é o principal fator determinante da qualidade cristalina final do SiC sintetizado por feixe de íons, quando comparado ao stress, resultante de um casamento de redes forçado entre o substrato Si e o SiC sintetizado.SiC is a promising semiconductor for high-power, high-frequency and hightemperature electronic devices and the synthesis of an epitaxial layer of SiC by implantation, on the surface of Si, can be a route for integration with the Si technology. High temperature implantation (600oC) through a SiO2 cap, 1250oC post-implantation annealing under Ar ambient (with 1% of O2), and chemical etching are the base for the present synthesis. 40 keV carbon implantations were performed into SIMOX(111) and Si(111) substrates covered with a 100 nm SiO2 cap. Implantation into SIMOX was the main focus. It has allowed us to obtain a SiC synthesized layer separated from the bulk silicon and to analyze the structural consequences. In this case, it was performed the conversion of a 65 nm Si(111) overlayer of a SIMOX(111) into 30-45 nm SiC. Sequential C implantations (fluence steps of about 5 × 1016 C/cm2), followed by 1250oC annealing, has allowed to estimate the minimum C fluences to reach the stoichiometric composition as 2.3 × 1017 C/cm2 and 2.8 × 1017 C/cm2, when implanting into SIMOX and into Si, respectively. Rutherford Backscattering Spectrometry (RBS) was employed to measure layer composition evolution. By analyzing the sequential implantations it was possible to understand the carbon redistribution during implantation and annealing. A two-sublayers structure is observed in the synthesized SiC separated from the bulk Si, being the superficial one richer in Si. Transmission Electron Microscopy (TEM) has shown that the synthesized layers are always cubic and epitaxial to the original Si structure. TEM also show that single-step implantations, up to the minimum fluences, result in better structural quality. For a much higher C fluence (4 × 1017 C/cm2), a whole stoichiometric layer is obtained, with reduction of structural quality. Our results indicate that excess of carbon content is the major detrimental factor to determine the final crystalline quality in SiC ion beam synthesis, as compared to the stress, resulting from a forced lattice matching between the Si substrate and the synthesized SiC.
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LAYADI, ABDELHALIM. "Etude et caracterisation de composants d'optique integree sur silicium sur isolant de type simox." Paris 11, 1998. http://www.theses.fr/1998PA112111.
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Cette these porte sur l'etude et la caracterisation de composants d'optique integree sur silicium sur isolant de type simox intervenant dans la realisation d'un nouveau type de modulateur spatial de lumiere (msl) a structure guide d'onde. Des composants specifiques realises sur simox standard ont permis d'etudier les pertes de propagation dans des guides plans d'epaisseur submicronique, qui peuvent provenir des fuites de lumiere vers le substrat, au travers de la silice enterree, de la diffusion dans le volume et aux interfaces du film guidant et de l'absorption sur les porteurs libres. Il a ete demontre qu'on peut obtenir des guides a faibles pertes, avec des valeurs tres proches de la valeur theorique due uniquement aux fuites vers le substrat. Le couplage de la lumiere dans le guide s'effectue via un reseau de diffraction. Nous avons etudie l'influence des differents parametres qui regissent ce couplage. On a pu montrer qu'il est important d'adapter la taille du faisceau incident a la longueur de decouplage du reseau. La position du maximum du faisceau incident par rapport au bord du guide est egalement importante. Nous avons egalement etudie le couplage fibre/guide et demontre que l'on peut coupler ainsi plus de 30% de la lumiere dans le guide. L'efficacite de couplage a ete encore amelioree en ajoutant un miroir metallique au-dessus de la couche de silice de couverture. Nous avons pu montrer qu'elle peut depasser 50%, alors que la valeur limite des reseaux de couplage classiques de 40%. Enfin, la difference de largeur entre des guides 2d et les reseaux de couplage associes exige des transitions pour diminuer les pertes d'insertion. Nous avons adapte la methode bpm (beam propagation method) a la conception de ces transitions.
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Jomaah, Jalal. "Propriétés électriques et modèles physiques des composants mos/soi (simox) à température ambiante et cryogénique." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0152.
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L'objectif de cette these est d'etudier les composants mos des technologies silicium sur isolant (soi) dans une large gamme de temperature pour caracteriser et modeliser les mecanismes physiques specifiques de ces transistors en vue d'applications conventionnelles et a basse temperature (cryomicroelectronique). Une synthese des techniques pour la realisation de l'isolation dielectrique est d'abord presentee, puis l'interet de telles structures est rappele. Le deuxieme chapitre est relatif au comportement des principaux parametres electriques des tmos en fonction de la temperature t, de l'ambiante jusqu'a une temperature proche de l'helium liquide. Dans le troisieme chapitre, une modelisation des principaux mecanismes physiques des tmos/soi dans diverses gammes de temperature a ete realisee. Les phenomenes de verrouillage (latch) et de claquage sont presentes. Un modele pour l'effet d'auto-echauffement permettant d'extraire la resistance thermique et l'exces de temperature en fonction de t est propose. Le dibl est ensuite etudie en fonction de t. Une analyse detaillee du courant gidl est egalement presentee en se basant sur le calcul exact de la transparence w. K. B. Et la reduction tres forte du courant gidl a basse temperature est soulignee. Enfin, la reduction de la degradation par porteurs chauds en mode d'inversion volumique a ete montree. Le dernier chapitre est consacre a l'etude du bruit electrique basse frequence dans les composants simox controles par une ou deux grilles. Les sources de bruit ont ete determinees, l'influence de l'effet kink a egalement ete etudiee et un programme de simulation numerique a ete developpe et utilise afin de mieux comprendre les mecanismes physiques a l'origine du bruit electrique dans les transistors mos/soi a films minces
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Deng, Fei. "Self-aligned silicidation (salicide) process on separation by implanted oxygen (SIMOX) substrates and its device application /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 1997. http://wwwlib.umi.com/cr/ucsd/fullcit?p9820863.
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Garcia, Alain. "Contribution à l'étude des mécanismes de création de défauts lors de la réalisation de substrats simox." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0057.
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Le simox (separation by implanted oxygen) est un materiau soi qui presente de fortes potentialites dans le domaine de la micro-electronique. Utilise dans les annees 80 pour des applications militaires et spatiale, il est actuellement le principal candidat pour les applications civiles: cmos faible consommation. Apres une etude detaillee des defauts presents dans le materiau, la premiere partie de ce travail a ete consacree a la mise au point de procedures de caracterisation fiables des defauts cristallins. Ces methodes (revelation chimique et topographie x) sont adaptees a caracterisation de faibles densites de defauts (dislocations et fautes d'empilement). Par l'etude des conditions d'elaboration de substrats simox, nous avons mis en evidence que les dislocations sont generees, au premier ordre, au cours de l'implantation ionique. L'examen du materiau, avant recuit, nous a permis de proposer deux mecanismes possibles pour la formation des dislocations: le premier mecanisme est lie a la formation de boucles de glissement. Le deuxieme mecanisme est lie a la formation de boucles prismatiques. Au cours de ce travail, nous avons egalement investigue de nouveaux domaines d'etude ou l'epaisseur de la couche de silicium superficielle est a superieure a 1 m. Ce materiau est obtenu par epitaxie. Nous avons abouti a la mise au point d'un procede de fabrication permettant de reduire de facon significative, de l'ordre d'un facteur dix (10#4cm#-#2), la densite de dislocations du materiau simox epais
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Faynot, Olivier. "Caractérisation et modélisation du fonctionnement des transistors MOS ultra-submicroniques fabriqués sur films SIMOX très minces." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0121.
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Ce memoire est consacre a la caracterisation et a la modelisation des transistors mos fabriques sur des films simox tres minces. Dans le premier chapitre, outre l'orientation de la microelectronique, nous detaillons l'interet potentiel que peut susciter la technologie soi pour les applications basse-tension. Ensuite, nous analysons les phenomenes de couplage d'interfaces apparaissant dans deux types de conduction de transistors totalement desertes: la conduction par canal d'inversion et la conduction par canal d'accumulation. Puis, les effets de canaux courts sont etudies dans l'objectif d'optimiser l'architecture des transistors soi ultra-submicroniques. Les phenomenes lies a l'ionisation par impact sont ensuite presentes pour les deux types de conduction. Un procede simple de fabrication est alors decrit et les resultats experimentaux des transistors et des circuits mettent en avant les avantages du soi pour les applications basse-tension. Le dernier chapitre est dedie a la caracterisation des phenomenes de porteurs chauds des transistors soi completement desertes
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Dezauzier, Christophe. "Evaluation et comparaison des propriétés de films épitaxiés de 3C-CiC/Si et de 3C-SiC/SIMOX." Montpellier 2, 1995. http://www.theses.fr/1995MON20180.
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Le carbure de silicium (sic) est un materiau bien connu pour ses qualites mecaniques, sa durete exceptionnelle et son excellente stabilite chimique. De plus, la largeur importante de sa bande d'energie interdite (entre 2. 3 ev (3c) et 3 ev (2h) lui confere de reelles possibilites pour la realisation de composants capables de fonctionner sous des contraintes importantes: hautes temperatures, hautes pressions, radiations nous nous sommes interesses au cas de films minces de 3c-sic epitaxies sur si <100>. Les proprietes structurales et optiques des couches ont revele l'existence d'une contrainte residuelle, liee au fort desaccord de parametres de maille entre le sic et le si (20%). De plus, la caracterisation electrique a haute temperature, nous a permis de mettre en evidence un courant de fuite tres important a travers le substrat si au-dela de 450k. Une solution susceptible de repondre a ces problemes consiste a realiser l'epitaxie de films minces de 3c-sic sur un substrat de silicium isolant (soi: silicon on insulator), en particulier sur simox (separation by implanted oxygen). La caracterisation structurale et optique de cette structure montre que les films de 3c-sic sont d'excellente qualite cristalline, avec une contrainte residuelle completement relaxee, meme si la structure simox est endommagee lors de la croissance des films de 3c-sic. Sur les premieres couches obtenues, la temperature a laquelle apparait un courant de fuite a travers le substrat est decalee de 100k vers les plus hautes temperatures (t#f#u#i#t#e=550k). Nous montrerons que pour des couches, dont la qualite de la silice apres l'epitaxie est moins perturbee, la temperature de fuite est repoussee a 620k. Notons que l'absence de contrainte permet d'envisager des surfaces d'epitaxie de grandes dimensions adaptees aux procedes industriels
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Azevedo, Gustavo de Medeiros. "Estudo do poder de freamento de He, Li, Eu e Bi canalizados em alvos de Si cristalino." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2000. http://hdl.handle.net/10183/10430.
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Neste trabalho, foi realizado um estudo experimental sistemático da perda de energia de íons canalizados ao longo das direções h100i , h111i e h110i de cristais de Si. Foram abordados dois aspectos distintos, porém correlatos, do problema. No primeiro tópico, estudamos o poder de freamento de íons pesados (Eu e Bi) com energias entre 15 e 50 keV, para os quais o mecanismo predominante de perda de energia é o freamento nuclear. O segundo tópico está relacionado ao freamento de íons leves (He e Li) com energias no intervalo entre 0.3 e 8 MeV. Neste caso, os íons perdem energia, predominantemente, em colisões com elétrons. O estudo do freamento dos íons pesados foi realizado de maneira indireta, pela comparação dos perfis de concentração de Eu e Bi implantados em direção canalizada com as previsões do programa MARLOWE, que simula a interação de feixes de íons com alvos sólidos. Nós observamos pela primeira vez, em implantações em direção canalizada, o chamado efeito Z1, ou seja, a deformação das núvens eletrônicas do projétil e do alvo em colisões binárias de baixa energia. Enquanto nossos dados para implantações de Bi são muito bem reproduzidas pelo MARLOWE, os perfis de Eu apresentam caudas mais profundas que as preditas por este programa. Além disso nós demonstramos que este comportamento é explicado por cálculos ab initio de estrutura molecular baseados na Teoria Funcional da Densidade (DFT). Com relação os íons leves, a perda de energia foi obtida pela técnica de retroespalhamento Rutherford em amostras do tipo SIMOX, que consistem em uma camada de Si monocristalino de 200 nm sobre uma camada de 500 nm de SiO2 enterrada numa matriz de Sih100i . Com esta técnica nós realizamos medidas da perda de energia como função da energia e do ângulo de incidência do feixe com relação á direção de canalização. A análise teórica dos resultados foi realizada por intermédio de simulações das trajetórias canalizadas e de cálculos da dependência da perda de energia com o parâmetro de impacto. Estas comparações permitiram determinar o papel desempenhado pelos diversos mecanismos de perda de energia envolvidos no freamento dos íons canalizados.In this work we have performed a systematic sudy of the energy loss of channeled ions along the h100i , h111i and h110i directions of Si single crystals. Two different, but related, topics of the problem were investigated. On the first topic we have studied the stopping powers of heavy ions (Eu and Bi) with energies ranging between 15 and 50 keV, for which the main slowing down mechanism is the nuclear stopping power. The second topic is related to the slowing down of light ions (He and Li) with energies ranging between 0.3 and 8 MeV. In this case, the projectile energy is lost mainly in electronic collisions. The study of the slowing down of channeled heavy ions was performed in an indirect way, by comparing the depth profiles of Eu and Bi ions implanted under channeling conditions with calculations with the program MARLOWE which simulates the interactions of ion beams with solid targets. We have observed for the first time in channeling implantations the Z1 effect, namely, the deformation of the periphery of the electronic clouds of the projectile and target in low energy atomic collisions. While our data for Bi implantations are very well reproduced by MARLOWE predictions the Eu profiles present long tails that go farther in the Si bulk than predicted by MARLOWE. Furthermore, we have demostrated that this behavior is explained in terms of molecular structure ab initio calculations based on the Density Fuctional Theory (DFT). Concerning the light ions, the stopping powers were measured by the Rutherford Backscattering technique with SIMOX samples that consist on a Si single crystal layer 200nm thick on the top of a 5000 nm thick SiO2 layer buried on a Sih100i single cristal. With this technique we have measured both the energy and the angular dependency of the the channeling stopping power. The theoretical analysis of the results was performed by means of computer simulations of the channeled trajectories and in calculatios of the impact parameter dependent energy loss. These comparisons allowed us to determine the relative role played by the energy loss processes under channeling conditions
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Elewa, Mohamed Tarek. "Modèles de fonctionnement et méthodes spécifiques d'analyse des composants intégrés MOS de la filière silicium sur isolant (SIMOX)." Grenoble INPG, 1990. http://www.theses.fr/1990INPG0080.
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Ce memoire est consacre a l'analyse de methodes et de modeles specifiques de caracterisation des couches de silicium sur isolant (soi) et des composants integres. L'accent est mis sur la presentation de l'evolution des proprietes electriques du materiau simox au cours des dernieres annees. Le premier chapitre contient une description generale des avantages des substrats soi, des differentes techniques de synthese et de certains aspects typiques du fonctionnement des dispositifs soi. Les methodes d'analyse basees sur l'utilisation des transistors soi a enrichissement (conduction face avant et arriere, inversion volumique, pompage de charge, bruit, transconductance dynamique) sont regroupees au deuxieme chapitre. Nous montrons ensuite que le transistor soi a desertion represente un remarquable outil pour la caracterisation des interfaces et des proprietes de generation et de transport dans le film. Le quatrieme chapitre presente les modeles physiques et les proprietes de plusieurs generations de materiaux simox, relatives au fonctionnement des dispositifs en tres basses temperatures. Le dernier chapitre est consacre a l'analyse de la conduction parasitique sur les bords de l'ilot de silicium. Divers moyens d'evaluation sont utilises pour etudier la qualite et l'homogeneite des bords ainsi que le couplage entre les deux interfaces et les bords
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Fadanelli, Filho Raul Carlos. "Perda de energia e fragmentação de íons moleculares em cristais." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2005. http://hdl.handle.net/10183/10855.
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Os fenômenos decorrentes da interação entre íons monoatômicos e a matéria têm sido amplamente estudados há décadas. No entanto, um esforço comparativamente menor tem sido despendido no estudo dos fenômenos decorrentes da interação entre feixes moleculares e a matéria, especialmente quando o alvo do feixe é um sólido cristalino. Tais fenômenos, como a transferência de energia entre o feixe e a matéria, a emissão de raios X induzidos pelos feixes e a geração de produtos de reação nuclear sofrem importantes modificações no caso de feixes moleculares. Essas alterações estão longe de ser explicadas por uma simples soma dos efeitos causados pelos componentes individuais do aglomerado iônico. Em particular, no caso de interação com sólidos cristalinos, a fragmentação dos aglomerados causada pela explosão coulombiana causa importantes efeitos sobre o fluxo de íons ao longo do sólido. Finalmente, efeitos de vizinhança entre os componentes do aglomerado alteram sensivelmente o valor da energia transferida entre este e o sólido. Na descrição desses fenômenos, empregou-se, neste trabalho, de um lado, a construção de um modelo teórico para a perda de energia de aglomerados e, de outro, técnicas experimentais envolvendo contagens de retroespalhamento, indução de raios X pelo feixe de íons e geração de produtos de reação nuclear por feixes de H+, H2 + e H3 + em Si e SIMOX. Como elo entre teoria e experimento, empregaram-se simulações que descrevem a interação entre os íons moleculares e o alvo. Pela primeira vez, alterações de fluxo de íons causadas pela explosão coulombiana foram quantificadas, valores de perda de energia foram obtidos e, finalmente, uma nova expressão simplificada para a transferência de energia foi obtida.Ion induced phenomena in matter have been studied for many decades. However, a comparatively minor effort was done in the subject of the interaction of molecular ions with the matter, especially for crystalline solid targets. Such phenomena, for instance, the energy transfer between ions and matter, the ion beam induced X ray emission and the nuclear reaction yield undergo important modifications under molecular ion bombardment. These modifications cannot be explained by the sum of effects induced by each ion component of the ionic cluster. Moreover, for the interaction between the cluster beam and crystalline solids, the cluster breakup induced by the Coulomb explosion leads to important effects in the ion flux distribution along the solid. Finally, vicinage effects among the cluster components change the energy transfer between this cluster and the solid. In order to describe those phenomena in this work, we have used, firstly, coupledchannel calculations to describe the cluster energy transfer, and developed a simple energy loss model. Secondly, backscattering, particle induced X ray emission and nuclear reaction analysis experiments have been measured for H+, H2 + and H3 + beams in Si and SIMOX targets. As a link between theory and experiments, we have performed computer simulations to describe the full interaction between the molecular ions and the target atoms. For the first time, cluster ion flux changes induced by the Coulomb explosion were quantified and, finally, a new simple expression for the cluster energy transfer was developed.
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Vettese, Frédéric. "Propriétés électriques de couches minces SIMOX et de couches d'inversion de transistors MOS-HALL modulées par irradiation aux électrons." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37619090j.
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OROBTCHOUK, REGIS. "Modelisation et etude de composants pour l'optique integree silicium sur isolant (simox) a la longueur d'onde de 1,3 micron." Paris 11, 1996. http://www.theses.fr/1996PA112001.
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Cette these porte sur l'etude de composants elementaires d'optique integree sur substrats standards de simox, en vue de la realisation de matrices de modulateurs spatiaux de lumiere pour les telecommunications optiques. Les guides d'ondes plans constitues par le film de silicium superficiel du simox sont des guides d'ondes a fuites dont les pertes ont ete calculees. Des simulations numeriques ont ete developpees pour modeliser les guides d'ondes a confinement lateral et les miroirs integres. Pour ces derniers, une methode originale permet de prendre en compte le caractere guide de l'onde jusqu'au miroir et d'estimer les pertes dues aux imperfections liees a leur realisation (position, inclinaison et rugosite de la facette miroir). Pour les coupleurs a reseaux de diffraction, la methode de calcul dite differentielle a ete etendue au cas d'un reseau de forme quelconque enterre dans un empilement de couches dielectriques et utilisee pour traiter le couplage d'un faisceau incident gaussien avec un mode guide. Une technologie de fabrication de reseaux localises a ete mise au point et utilisee pour la realisation de dispositifs de test permettant la mesure des pertes des guides d'ondes simox. Le developpement de systemes plus complexes d'optique integree sur simox implique que les differents composants elementaires puissent etre realises au cours des memes etapes technologiques. Les outils de simulation developpes ont ete utilises pour la conception et l'optimisation des differents types de dispositifs etudies (coupleurs a reseaux, guides 2d, miroirs), compte tenu des fortes contraintes technologiques
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Cho, Eun Chel Electrical Engineering UNSW. "Optical transitions in SiO2/crystalline Si/SiO2 quantum wells and nanocrystalline silicon (nc-Si)/SiO2 superlattice fabrication (Restricted for 24 months until Feb. 2006)." Awarded by:University of New South Wales. Electrical Engineering, 2003. http://handle.unsw.edu.au/1959.4/22492.
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Innovation in photovoltaic technology may offer cost competitive options to other energy sources and become a viable solution for the energy and environmental challenges of the 21st century. One proposed innovative technology is based on all-silicon tandem cells, which are constructed using superlattices consisting of environmental friendly Si and its compounds. The well and barrier materials in superlattices are restricted to silicon and silicon oxide during the present study. Single crystalline Si/SiO2 quantum wells (QWs) have been fabricated by thermal oxidation of silicon-on-insulator (SOI) wafers. It is found that oxide properties in QWs are important for SOI wafers prepared by the SIMOX (Separation by Implantation of Oxygen) technique. However, QWs fabricated from SOI wafers prepared by the ELTRAN (Epitaxial Layer TRANsfer) approach show the effect of quantum confinement without evidence of strong oxide interfacial transitions. In these wafers, evidence for an apparently ordered silicon oxide was found with 1.92?atomic fringe spacing along the (110) direction of the Si structure and with the thickness about 17?along the (100) direction of the Si structure. Luminescence wavelength ranges are from 700nm to 918nm depending on the Si thickness. The luminescence measurements on other positions of the sample show peak and shoulder spectra, which are explained by monolayer fluctuations in QW thicknesses, previously observed in III-V QWs and II-VI QWs. Si/SiO2 superlattices are fabricated by RF magnetron sputtering. Si density is the key issue in crystallizing the superlattice. High-density Si layers crystallize either under high temperature furnace annealing or rapid thermal process annealing. However, low density Si would not crystallize even at high temperature. Crystallized nanocrystals in the Si layers are observed by high resolution transmission electron microscopy (HRTEM) when the Si layer is thicker than 3nm. When Si layers are thinner than 3nm, the Si layers are discontinuous and finally deteriorate into small nanocrystals. The suitability of such superlattices for surface passivation and antireflection coatings is reviewed. Initial attempts to fabricate heterojunctions between Si wafers and Si/SiO2 superlattices resulted in open circuit voltage of 252mV. However, it is expected that better results would be obtained if Si/SiO2 superlattices were fully crystallized.
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Vonsovici, Adrian Petru. "Structures a guides d'ondes optiques silicium sur isolant (simox) et si#1#-#xge#x/si pour la modulation optique a 1. 3m." Paris 11, 1996. http://www.theses.fr/1996PA112325.
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Les applications du silicium en optoelectronique sont de plus en plus envisageables en vue d'obtenir des composants bon marche pour les telecommunications par fibres optiques ou les interconnexions optiques. Cette these presente l'etude des composants actifs d'optique integree a structure guide d'onde silicium-sur-isolant (soi) de type simox. Ces composants sont concus a partir de modelisations optiques et electriques. L'effet electro-refractif des porteurs libres en exces est utilise pour modifier l'indice effectif du mode guide dans une structure simox. L'analyse experimentale par reflexion totale attenuee des guides d'onde a fuites permet d'obtenir un modele optique equivalent de la couche de silice enterree a 1,3m. L'analyse theorique est faite a partir d'un modele matriciel modifie pour l'analyse des systemes electromagnetiques ouvertes. L'analyse par la methode de l'indice effectif des guides d'onde 2d a confinement par dopage et par ruban est presentee en vue de leur utilisation pour les modulateurs de phase et/ou d'intensite. Une analyse theorique par la methode des matrices de transfert d'un modulateur d'intensite de type fabry-perot a structure guide d'onde est faite. Les variations de la reflectivite et de la transmission de cette structure sont calculees en fonction de la variation d'indice effectif. Ces variations sont realisables par injection de porteurs libres. Des structures p#+/n#-/n#+ laterales permettent d'obtenir les variations necessaires de concentrations des porteurs injectes pour des densites de courant comprises entre 500 et 800a/cm#2. L'analyse en regime dynamique montre la faisabilite de ces composants pour un fonctionnement a des frequences n'excedant pas 50mhz. Une analyse des structures comportant des couches sige contraintes epitaxiees sur simox est faite en vue de leur application a des composants d'optique integree. L'analyse experimentale par reflexion totale attenuee nous a permis de determiner l'indice de refraction des couches contraintes avec une concentration de 20% de ge. Des heterostructures sige/si a modulation de dopage sont analysees theoriquement pour les applications a la modulation optique a 1,3 et 1,55m. L'originalite de ces composants consiste dans leur fonctionnement par desertion de la charge confinee a l'equilibre dans des puits quantiques qui permet d'envisager des frequences de commutation sensiblement plus elevees. Des composants plus complexes comportant des modulateurs d'intensite fabry-perot a structure guide d'onde et des photodetecteurs a guide d'onde sige sont proposes. Le couplage optique est effectue par reseau de diffraction et permet le fonctionnement comme retro-modulateur
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Sweid, Issam. "Simulation bidimensionnelle des processus technologiques dans le cas des structures silicium-sur-isolant obtenues par implantation d'oxygène : élaboration du programme OSIRIS II." Grenoble INPG, 1990. http://www.theses.fr/1990INPG0077.
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Un programme de simulation bidimensionnelle des processus technologiques dans le cas de structures silicium-sur-isolant obtenues par implantation d'oxygene. Osiris ii a ete developpe. Il permet de simuler les principales etapes de fabrication des circuits integres sur simox. Les modeles physiques utilises pour l'oxydation, l'implantation ionique et la diffusion des dopants sont exposes. Par ailleurs, une solution analytique-numerique de l'equation de diffusion dans le cas des structures simox a ete proposee. Le couplage du programme osiris ii avec isis ii de simulation du comportement electrique des t-mos sur silicium-sur-isolant a ete presente. Enfin, les possibilites du programme sont illustrees par des exemples de simulation d'un transistor mos sur simox
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Guilhalmenc, Caroline. "Étude des mécanismes de création de défauts lors de la réalisation de structures minces silicium-sur-isolant par les procédés SIMOX Faible Dose et Smart-Cut®." Grenoble INPG, 1997. http://www.theses.fr/1997INPG0135.
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Les matériaux silicium-sur-isolant (SOI) présentent de nombreux avantages pour la production de nouvelles générations de circuits intégrés fonctionnant à très basses tensions. Ils constituent désormais l’une des voies principales de recherche dans le domaine de la micro-électronique à très grande densité d’intégration. Pour cela, il est nécessaire de mettre au point des technique permettant d’obtenir des matériaux SOI de bonne qualité, capables de rivaliser avec le silicium massif. Les mécanismes de création de défauts lors de la réalisation de deux types de substrats SOI, SIMOX Faible Dose et UNIBOND® (obtenus respectivement par les techniques SIMOX et Smart-Cut®), ont été étudiés. Après implantation de faibles doses d’oxygène (technique SIMOX), la formation de couches enterrées d’oxydes au cours du recuit à haute température a été appréhendée. L’étude des mécanismes de croissance et de coalescence des précipités d’oxydes à haute température a permis d’améliorer la qualité diélectrique des couches enterrées de silice. Enfin, une étude systématique des défauts (dislocations, fautes d’empilement) et des propriétés électriques des films de silicium de ces deux matériaux, a été menée par différentes techniques de caractérisation. Elle constitue la première synthèse comparative des qualités de ces matériaux SOI, qui présentent actuellement un fort potentiel pour la réalisation de circuits intégrés très performantsSilicon on insulator materials are very attractive for the production of new generation circuits for low voltage applications. To face the bulk silicon industry and to respond to the increasing interest for the ultra large scale integration, techniques for the formation of high quality SOI material are required. Defect generation mechanisms during the synthesis of two SOI substrates, Low Dose SIMOX and UNIBOND® (elaborated with the SIMOX and Smart-Cut® techniques, respectively), have been investigated. After low dose oxygen implantation (SIMOX process), the formation of buried oxide layers during high temperature annealing has been studied. The buried oxide dielectric quality has been improved with the understanding of oxide precipitate growth and ripening mechanism. Finally, a systematic study has been performed on the top silicon films in order to characterize the crystalline defects (dislocations, stacking faults) and the electrical properties of these two materials. This corresponds to the first results concerning the comparison of these new promising SOI materials for the production of high performance integrated circuits
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Araújo, Leandro Langie. "Estudo da perda de energia de Be, B e O em direções aleatórias e canalizadas de alvos de Si e determinação da respectiva contribuição Barkas." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2004. http://hdl.handle.net/10183/6101.
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Neste trabalho de tese, foi estudada a perda de energia de íons de Be, B e O incidindo em direção aleatória e ao longo dos canais axiais <100> e <110> do Si. Os intervalos de energia nos quais as medidas experimentais foram realizadas variaram entre 0,5 e 10 MeV para Be, entre 0,23 e 9 MeV para B e entre 0,35 e 15 MeV para O. Posteriormente, o efeito do “straggling” (flutuação estatística da perda de energia) nas medidas em direção aleatória também foi analisado, para íons de Be e O, nas regiões de energia entre 0,8 e 5 MeV e 0,35 e 13,5 MeV, respectivamente. As medidas relacionadas à perda de energia em direção aleatória e ao “straggling” em função da energia dos íons foram realizadas combinando-se a técnica de retroespalhamento Rutherford (RBS) ao emprego de amostras de Si implantadas com marcadores de Bi. Os resultados relativos à perda de energia ao longo dos canais <100> e <110> do Si em função da energia dos íons foram obtidos através de medidas de RBS canalizado feitas em amostras tipo SIMOX (Separated by IMplanted OXygen). A perda de energia foi calculada teoricamente, através de três abordagens diferentes: a) a Aproximação de Convolução Unitária (UCA); b) o método não-linear baseado na seção de choque de transporte e na regra da soma de Friedel estendida (TCS-EFSR); c) a teoria binária. A combinação dos cálculos UCA com os resultados experimentais para a perda de energia canalizada de Be, B e O em Si permitiu isolar a contribuição do efeito Barkas para a perda de energia. Essa contribuição mostrou ser bastante grande, chegando a 45% do valor das outras contribuições para o caso do Be, 40% para o caso do B e 38% para o caso do O. Esses resultados são comparáveis aos previamente obtidos no Laboratório de Implantação Iônica da UFRGS para íons de He e Li. As teorias TCS-EFSR e binária permitiram o cálculo do efeito Barkas para a perda de energia devida aos elétrons de valência. Os resultados teóricos e experimentais para a contribuição Barkas total e relativa foram comparados e analisados em função da carga média e da energia dos íons para as energias de 300, 400, 500 e 700 keV/uma. O acordo teórico-experimental é razoável para as energias mais baixas, melhorando com o aumento da energia dos íons incidentes.
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Zufelde, Sabine. ""Comment savoir?" - "Comment dire?" : metafiktionale, metanarrative und metahistoriographische Diskurse über Referenz und Repräsentation in Claude Simons Romanen "La Route des Flandres" (1960), "Triptyque" (1973) und "Les Géorgiques" (1981) /." Tübingen : Gunter Narr Verlag, 2009. http://deposit.d-nb.de/cgi-bin/dokserv?id=3233137&prov=M&dok_var=1&dok_ext=htm.
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Reitsma-La, Brujeere Cornelia Johanna. "Passé et présent dans Les Géorgiques de Claude Simon étude intertextuelle et narratologique d'une reconstruction de l'histoire /." Amsterdam ; Atlanta, GA : Rodopi, 1992. http://catalog.hathitrust.org/api/volumes/oclc/27368198.html.
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Riella, Caroline Leitão. "SIMon." reponame:Repositório Institucional da UFSC, 2016. https://repositorio.ufsc.br/xmlui/handle/123456789/167967.
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Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Química, Florianópolis, 2016.Made available in DSpace on 2016-09-20T04:39:54Z (GMT). No. of bitstreams: 1 341080.pdf: 1665132 bytes, checksum: 8a281cb9134c64a718044e51aa95bce4 (MD5) Previous issue date: 2016
A ventilação mecânica é a forma mais avançada de suporte à vida. Em pacientes críticos doentes, os fatores associados às decisões que permeiam o ato de ventilar são determinantes na antecipação da morte do paciente e/ou chance de vida.Este estudo tem por objetivo desenvolver uma ferramenta que, ligada ao respirador, analisa os dados obtidos por este, armazenando-os em um banco de dados, emitindo alarmes em situações de emergência, e auxiliando os profissionais na tomada de decisões. O desenvolvimento desta ferramenta teve como colaboração doze profissionais intensivistas quanto à elegibilidade das variáveis pertinentes à monitoração dos pacientes em assistência ventilatória, através de um questionário de variáveis divididas quanto: mecânica respiratória, troca gasosa, sinais vitais e função respiratória. A base de dados de 150 pacientes permitiu a incorporação da ferramenta mais próxima do cenário real, além da motivação contínua no processo de aprendizagem, conhecimentos gerais e especializados, interdisciplinariedade e habilidades na tomada de decisão. O mesmo permite ainda, como ferramenta científica, pesquisas a partir destes dados armazenados. Com a possibilidade de análise de dados em tempo real, todo o histórico do paciente submetido à ventilação mecânica pode ser minuciosamente acompanhado, inclusive com a descrição de todas as intervenções e seus resultados. Fez-se possível desenvolver equações indicadoras de patologias respiratórias como Edema Agudo de Pulmão, Doença Pulmonar Obstrutiva Crônica e Pneumonia, relatórios e gráficos de pacientes com estas patologias e como as mesmas se comportam durante a evolução do paciente em assistência ventilatória. Esta ferramenta pode contribuir para pesquisas científicas vigentes na área para estudos de caso e análises estatísticas.
Abstract: Mechanical ventilation is the most advanced form of life support. In patients critically ill patients, the factors associated with decisions that underlie the act of venting are critical in anticipation of the death of the patient and / or chance of life. This study aims to develop a tool that connected to the respirator, analyzes the data obtained by this, storing them in a database, sending alarms in emergency situations, and helping professionals in decision-making. The development of this tool was to collaboration twelve critical care professionals on the eligibility of variables for monitoring of patients on mechanical ventilation, using a questionnaire variables divided as: respiratory mechanics, gas exchange, vital signs and respiratory function. The 150 patient database allowed the incorporation of the next tool of the real scenario, and the ongoing motivation in the learning process, knowledge and expertise, interdisciplinarity and skills in decision making. The same also allows, as a scientific tool searches from these stored data. With the possibility of real-time data analysis, the entire history of the patient undergoing mechanical ventilation can be closely monitored, including the description of all interventions and their results. It made it possible to develop indicators equations of respiratory diseases such as Acute Lung Edema , Chronic Obstructive Pulmonary Disease and Pneumonia, reports and charts of patients with these diseases and how they behave during the evolution of patient ventilatory assistance. This tool can contribute to current scientific research in the area for case studies and statistical analyzes.
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Lindahl, Margot. "La conception du temps dans deux romans de Claude Simon /." Stockholm : Almqvist & Wiksell, 1991. http://catalogue.bnf.fr/ark:/12148/cb35497809m.
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Ionescu, Adrian M. "Modèles et méthodes associes a la caractérisation électrique du tmos : application aux technologies SOI." Grenoble INPG, 1997. http://www.theses.fr/1997INPG0009.
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Les modeles et les methodes associees a la caracterisation electrique du tmos et particulierement, leur application aux technologies soi constituent l'objet de ce travail. Le premier chapitre est consacre a l'analyse du fonctionnement electrique du tmos/silicium massif ; nous proposons une expression unifiee en inversion faible, moderee et forte, pour le courant de drain, en regime lineaire, et son application a l'extraction de la tension de seuil. On analyse aussi l'influence des polarisations sur la sensibilite du tmos utilise comme capteur de champ magnetique. Le developpement theorique et experimental de la technique du pseudo-transistor mos, pour l'evaluation des materiaux soi sur plaquette, est donne dans le deuxieme chapitre. On y presente : la validation d'une nouvelle methode pour la determination de la duree de vie de generation dans les materiaux soi, l'etude de l'influence des resistances serie et des contacts schottky, la methode 3-pointes et l'evaluation du materiau unibond. Le troisieme chapitre est dedie a l'etude du tmos en technologie soi : on analyse le regime transitoire du courant de drain en inversion faible associe a la technique de zerbst et on effectue une etude systematique de la degradation des tmos/simox par irradiation gamma a de fortes doses (>1mrad).
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Schaumberg, Uta. "Die opere serie Giovanni Simone Mayrs /." München ; Salzburg : Katzbichler, 2001. http://catalogue.bnf.fr/ark:/12148/cb389757071.
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Simon, Sophie Ollès Christian Maniez Dominique. "Proposer des livres électroniques à la Section sciences du SCD de l'Université Paris-Sud 11." [S.l.] : [s.n.], 2006. http://www.enssib.fr/bibliotheque/documents/ppp/ppp-simon-N.pdf.
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Harcrow, Michael A. "Trios of Simon A. Sargon including horn." Thesis, Recital, recorded Jan. 30, 2006, in digital collections. Access restricted to the University of North Texas campus. connect to online resource, 2007. http://digital.library.unt.edu/permalink/meta-dc-5171.
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Thesis (D.M.A.)--University of North Texas, 2007.System requirements: Adobe Acrobat Reader. Accompanied by 4 recitals, recorded Nov. 16, 2004, June 20, 2005, Jan. 30, 2006, and Aug. 27, 2007. Includes bibliographical references (p. 88-92).
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Désilets, Geneviève. "Le monologue remémoratif au sein du nouveau roman français : du discours à la perception /." Trois-Rivières : Université du Québec à Trois-Rivières, 2004. http://www.uqtr.ca/biblio/notice/tablemat/18441429TM.pdf.
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Ribeiro, Daniel Falkemback. "Palimpsestos da guerra: o intertexto latino em Claude Simon." Universidade de São Paulo, 2015. http://www.teses.usp.br/teses/disponiveis/8/8151/tde-11012016-145619/.
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O romance de Claude Simon dialoga com muitos textos por meio de diversos procedimentos de composição, em especial devido à intertextualidade explícita em muitos casos. Ligado ao contexto estético do nouveau roman, o novo romance francês, o autor lida em sua escrita com aspectos linguísticos peculiares, dentre eles a perspectiva temporal, que evidenciam seu caráter literário. Evidencia-se, por consequência, para o crítico, a necessidade de entender como os diversos princípios de organização do texto se articulam em favor de sua unidade, feita de fragmentos que se colam e se deformam conforme as demandas do escritor, constituindo-se, assim, uma espécie de palimpsesto. O intertexto latino, ou seja, as relações entre um texto e a literatura romana antiga, tem papel fundamental na construção do texto simoniano, o que interfere também em nossa leitura de outros elementos que interagem com ele. Um dos romances em que se expõe com clareza esse fator intertextual na literatura de Simon é La Bataille de Pharsale (1969), nossa opção para objeto de estudo, dada à acentuação dos problemas postos pela presença da cultura clássica na obra por relações e transformações. Nesse romance, a guerra é um dos principais pontos de encontro derivados das relações entre antigos e modernos exercidas pela escrita, de modo que os outros aspectos composicionais do texto, como o tempo e a enunciação, parecem estabelecer uma interferência recíproca com o intertexto. Levando em conta esses fatores, nossa análise buscou se pautar na necessidade de reavaliar o percurso crítico feito sobre a obra do autor sob uma visão comparatista e multidisciplinar a fim de fornecer conclusões relevantes sobre nosso objeto. A partir desse estudo, fornecemos possibilidades de leitura do romance com base nessa discussão, bem como novas perspectivas para a compreensão da obra de Claude Simon e do romance moderno em relação à tradição clássica.The novel of Claude Simon dialogues with many texts through various composition procedures, especially due to the explicit intertextuality in many cases. In the aesthetic context of the nouveau roman, the French \"new novel\", the author deals in his writing with peculiar linguistic aspects, including the time perspective, which demonstrate its literary character. Thus, there is a clear need to the critics to understand how the various text organizational principles articulate among themselves in favor of a unit, made of fragments that stick and deform according to the demands of the writer, being thus a kind of palimpsest. The Latin intertext, the relationship between a text and the ancient Roman literature, plays a key role in the creation of the Simonian text, which also interferes in our reading of other elements that interact with it. One of the novels which sets out clearly that intertextual factor in Simon\'s literature is La Bataille de Pharsale (1969), our option for object of study, given the rise of problems posed by the presence of classical culture in the work by relations and transformations. In this novel, the war is one of the main points derived from the relations between ancient and modern in writing, so that other compositional aspects of the text, as time and enunciation, seem to establish a reciprocal interference with the intertext. Taking into account these factors, our analysis had the aim of reassessing the critical path on the author\'s work in a comparative and multidisciplinary approach to provide relevant conclusions about our object. From this study, we provide reading possibilities for the novel based on our discussion, as well as new perspectives for the understanding of Claude Simon\'s work and the modern novel in relation to the classical tradition.
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Merkl, Franz Josef. "General Simon Lebensgeschichten eines SS-Führers ; Erkundungen zu Gewalt und Karriere, Kriminalität und Justiz, Legenden und öffentlichen Auseinandersetzungen." Augsburg Wissner, 2009. http://d-nb.info/996716807/04.
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Kasper-Heuermann, Birgitta. "Selbstvergewisserung : zur immanenten Poetik in der "Symfonie van Victor Slingeland" von Simon Vestdijk /." Frankfurt am Main ; Berlin ; Paris [etc.] : P. Lang, 1994. http://catalogue.bnf.fr/ark:/12148/cb390872297.
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Roder, Jan Hendrik de. "Hoofdstukken over S. Vestdijk /." [S.n.] : [S.l.], 2001. http://catalogue.bnf.fr/ark:/12148/cb38801635d.
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Müller, Sascha. "Kritik und Theologie : christliche Glaubens- und Schrifthermeneutik nach Richard Simon (1638-1712) /." St. Ottilien : Eos-Verl, 2004. http://catalogue.bnf.fr/ark:/12148/cb40058097n.
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