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Journal articles on the topic 'Silicon Thin Film Technology'

Author: Grafiati

Published: 7 September 2023

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1

Zeman, Miroslav. "Thin-Film Silicon PV Technology." Journal of Electrical Engineering 61, no. 5 (September 1, 2010): 271–76. http://dx.doi.org/10.2478/v10187-010-0039-y.

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Thin-Film Silicon PV TechnologyThin-film silicon solar cell technology is one of the promising photovoltaic technologies for delivering low-cost solar electricity. Today the thin-film silicon PV market (402MWpproduced in 2008) is dominated by amorphous silicon based modules; however it is expected that the tandem amorphous/microcrystalline silicon modules will take over in near future. Solar cell structures based on thin-film silicon for obtaining high efficiency are presented. In order to increase the absorption in thin absorber layers novel approaches for photon management are developed. Module production and application areas are described.

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2

Johnson, R. W., T. L. Phillips, R. C. Jaeger, S. F. Hahn, and D. C. Burdeaux. "Multichip thin-film technology on silicon." IEEE Transactions on Components, Hybrids, and Manufacturing Technology 12, no. 2 (June 1989): 185–94. http://dx.doi.org/10.1109/33.31423.

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3

Shah, A. V., H. Schade, M. Vanecek, J. Meier, E. Vallat-Sauvain, N. Wyrsch, U. Kroll, C. Droz, and J. Bailat. "Thin-film silicon solar cell technology." Progress in Photovoltaics: Research and Applications 12, no. 23 (March 2004): 113–42. http://dx.doi.org/10.1002/pip.533.

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4

Beaucarne, Guy. "Silicon Thin-Film Solar Cells." Advances in OptoElectronics 2007 (December 17, 2007): 1–12. http://dx.doi.org/10.1155/2007/36970.

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We review the field of thin-film silicon solar cells with an active layer thickness of a few micrometers. These technologies can potentially lead to low cost through lower material costs than conventional modules, but do not suffer from some critical drawbacks of other thin-film technologies, such as limited supply of basic materials or toxicity of the components. Amorphous Si technology is the oldest and best established thin-film silicon technology. Amorphous silicon is deposited at low temperature with plasma-enhanced chemical vapor deposition (PECVD). In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si) is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

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5

Cheng, Yu, Huayi Hu, Zhihong Gao, Ke Zhou, Xiaona Wang, Shihong Xiang, and Xiaohui Chen. "Thin film silicon solar module encapsulation technology research." MRS Proceedings 1771 (2015): 87–95. http://dx.doi.org/10.1557/opl.2015.489.

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ABSTRACTThe encapsulation failure is a serious problem which leads to power degradation and life time reduction of silicon based thin film solar module. Therefore, the encapsulation material and related technology research and development become more and more important. This article describes some different junction box and middle foil encapsulation technology of the silicon based thin film solar module, different encapsulation materials and processes are compared and their impact on the manufacturing cost and module performance are discussed. The aim of this study is to find an appropriate solution of module encapsulation failure.

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6

Schropp, Ruud E. I., Reinhard Carius, and Guy Beaucarne. "Amorphous Silicon, Microcrystalline Silicon, and Thin-Film Polycrystalline Silicon Solar Cells." MRS Bulletin 32, no. 3 (March 2007): 219–24. http://dx.doi.org/10.1557/mrs2007.25.

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AbstractThin-film solar cell technologies based on Si with a thickness of less than a few micrometers combine the low-cost potential of thin-film technologies with the advantages of Si as an abundantly available element in the earth's crust and a readily manufacturable material for photovoltaics (PVs). In recent years, several technologies have been developed that promise to take the performance of thin-film silicon PVs well beyond that of the currently established amorphous Si PV technology. Thin-film silicon, like no other thin-film material, is very effective in tandem and triple-junction solar cells. The research and development on thin crystalline silicon on foreign substrates can be divided into two different routes: a low-temperature route compatible with standard float glass or even plastic substrates, and a high-temperature route (>600°C). This article reviews the material properties and technological challenges of the different thin-film silicon PV materials.

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7

Lang, W., P. Steiner, U. Schaber, and A. Richter. "A thin film bolometer using porous silicon technology." Sensors and Actuators A: Physical 43, no. 1-3 (May 1994): 185–87. http://dx.doi.org/10.1016/0924-4247(93)00691-v.

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8

Schröder, Bernd. "Thin film technology based on hydrogenated amorphous silicon." Materials Science and Engineering: A 139 (July 1991): 319–33. http://dx.doi.org/10.1016/0921-5093(91)90636-2.

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9

Sassaki, C. A., A. T. Arasaki, M. P. Carreño, A. Komazawa, and I. Pereyra. "Integral thin film technology amorphous silicon image sensor." Journal of Non-Crystalline Solids 115, no. 1-3 (December 1989): 90–92. http://dx.doi.org/10.1016/0022-3093(89)90370-0.

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10

Guo, Hang, Jun Ying Jiang, Jia Xing Liu, Zhi Hua Nie, Fang Ye, and Chong Fang Ma. "Fabrication and Calibration of Cu-Ni Thin Film Thermocouples." Advanced Materials Research 512-515 (May 2012): 2068–71. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.2068.

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Thin film thermocouples (TFTCs) have vast vistas owing to their advantages, such as thin junction, small volume, fast response rate, high sensitivity and so on. In this investigation, a transient temperature sensor of TFTCs was fabricated to measure the surface transient temperature by vacuum coating technology. Silicon dioxide was selected as insulating substrate, the overall dimension of which was 8 mm long, 8 mm wide, and 0.1 mm thick. Two different metal layers were sandwiched between silicon dioxide 2 insulating substrate and silicon dioxide protective layer: cuprum and nickel films, which were 0.08 μm thick. TFTCs consist of 13 Cu-Ni junctions, which are connected in series. The whole TFTCs area is 4.6mm × 4.6 mm. The aggregate thickness of the transient temperature sensor is 0.17 μm. To protect Cu and Ni films, a silicon dioxide layer thickness of 0.01 μm was evaporated on metal layers excluding terminal points. This research carried out static and dynamic calibration to TFTCs. The Seebeck coefficient of the thin film thermocouple is 0.83843 μV/°C. The dynamic performance of TFTCs exhibited dynamic behavior corresponding to the heat flux change on the surface of thin film thermocouple.

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11

Galashev, Alexander, and Ksenia Abramova. "Molecular Dynamics Simulation of Thin Silicon Carbide Films Formation by the Electrolytic Method." Materials 16, no. 8 (April 15, 2023): 3115. http://dx.doi.org/10.3390/ma16083115.

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Silicon carbide is successfully implemented in semiconductor technology; it is also used in systems operating under aggressive environmental conditions, including high temperatures and radiation exposure. In the present work, molecular dynamics modeling of the electrolytic deposition of silicon carbide films on copper, nickel, and graphite substrates in a fluoride melt is carried out. Various mechanisms of SiC film growth on graphite and metal substrates were observed. Two types of potentials (Tersoff and Morse) are used to describe the interaction between the film and the graphite substrate. In the case of the Morse potential, a 1.5 times higher adhesion energy of the SiC film to graphite and a higher crystallinity of the film was observed than is the case of the Tersoff potential. The growth rate of clusters on metal substrates has been determined. The detailed structure of the films was studied by the method of statistical geometry based on the construction of Voronoi polyhedra. The film growth based on the use of the Morse potential is compared with a heteroepitaxial electrodeposition model. The results of this work are important for the development of a technology for obtaining thin films of silicon carbide with stable chemical properties, high thermal conductivity, low thermal expansion coefficient, and good wear resistance.

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Kim, Sungjoon, Vikas Berry, Jessica Metcalfe, and Anirudha V. Sumant. "Thin film charged particle detectors." Journal of Instrumentation 18, no. 07 (July 1, 2023): P07047. http://dx.doi.org/10.1088/1748-0221/18/07/p07047.

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Abstract Silicon tracking detectors have grown to cover larger surface areas up to hundreds of square meters, and are even taking over other sub-detectors, such as calorimeters. However, further improvements in tracking detector performance are more likely to arise from the ability to make a low mass detector comprised of a high ratio of active sensor to inactive materials, where dead materials include electrical services, cooling, mechanical supports, etc. In addition, the cost and time to build these detectors is currently large. Therefore, advancements in the fundamental technology of tracking detectors may need to look at a more transformative approach that enables extremely large area coverage with minimal dead material and is easier and faster to build. The advancement of thin film fabrication techniques has the potential to revolutionize the next-to-next generation of particle detector experiments. Some thin film deposition techniques have already been developed and widely used in the industry to make LED screens for TVs and monitors. If large area thin film detectors on the order of several square meters can be fabricated with similar performance as current silicon technologies, they could be used in future particle physics experiments. This paper aims to review the key fundamental performance criteria of existing silicon detectors and past research to use thin films and other semi-conductor materials as particle detectors in order to explore the important considerations and challenges to pursue thin film detectors.

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13

Wang, Sheng Zhao, Ying Peng Yin, Chun Juan Nan, and Ming Ji Shi. "Influence of Substrate on μc-Si: H Thin Films." Key Engineering Materials 538 (January 2013): 169–72. http://dx.doi.org/10.4028/www.scientific.net/kem.538.169.

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By PECVD deposition technology, we mainly investigated the influence of substrate on intrinsic amorphous/microcrystalline silicon thin film prepared at 300°C. We study the crystallization ratio, grain size of the silicon thin film specially. The results reveal that the crystallization ratio and grain size of the silicon thin film changed along with different substrates. The silicon thin film crystallization ratio and grain size changed sharply when using glass and stainless steel substrate. On this work we think ideal μc-Si:H can be obtained by using glass as substrate and in the suitable experimental conditions.

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14

Yan, Jiwang, Kenta Watanabe, and Yutaro Nakagawa. "Fabrication of Thin-Film Fresnel Optics by Combining Diamond Turning and Photolithographic Processes." International Journal of Automation Technology 7, no. 4 (July 5, 2013): 385–90. http://dx.doi.org/10.20965/ijat.2013.p0385.

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A novel fabrication process is proposed for manufacturing thin-film metal Fresnel lenses for X-ray applications. This process combines diamond turning technology and photolithographic processes. To prevent thin-film lens substrates from deflection during diamond turning, films were prepared on single crystalline silicon wafers by electrolytic plating. After the Fresnel lens structure is generated on the metal thin films by diamond turning, the silicon substrate was then removed selectively by reactive ion etching. Experimental results demonstrated that the proposed hybrid fabrication process achieves submicron form accuracy and nanometer surface roughness.

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15

Haug, F. J., and C. Ballif. "Light management in thin film silicon solar cells." Energy & Environmental Science 8, no. 3 (2015): 824–37. http://dx.doi.org/10.1039/c4ee03346a.

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16

Bawedin, M., C. Renaux, and D. Flandre. "LDMOS in SOI technology with very-thin silicon film." Solid-State Electronics 48, no. 12 (December 2004): 2263–70. http://dx.doi.org/10.1016/j.sse.2004.06.007.

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17

Fortunato, G. "Polycrystalline silicon thin-film transistors: A continuous evolving technology." Thin Solid Films 296, no. 1-2 (March 1997): 82–90. http://dx.doi.org/10.1016/s0040-6090(96)09378-9.

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18

Lechner, P., and H. Schade. "Photovoltaic thin-film technology based on hydrogenated amorphous silicon." Progress in Photovoltaics: Research and Applications 10, no. 2 (2002): 85–97. http://dx.doi.org/10.1002/pip.412.

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19

Niu, X., C. Yu, M. Wang, G. Li, X. Zhu, B. Cheng, Z. Chen, et al. "Progress in Research and Mass Production of Large-Scale Tandem Thin Film Si Solar Modules at Chint Solar." MRS Proceedings 1426 (2012): 15–26. http://dx.doi.org/10.1557/opl.2012.1259.

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ABSTRACTOver the past decade, the PV industry has witnessed tremendous growth in manufacturing scale and technology advancement, with PV generated electricity cost ever approaching grid parity. Among them, Si based thin film technology has made substantial progress in demonstrating its inherent advantages in lower material cost, ease of manufacturing and higher energy yield, etc. More recently, reduced product prices and competing technologies from crystalline silicon and other thin film technologies have made amorphous and microcrystalline silicon based thin film technology very challenging, and requires further increase in module efficiency and decrease in manufacturing cost. As one of the few companies in the world with significant manufacturing capacity for tandem thin film Si PV products, Chint Solar (Astronergy) has been at the forefront of technology development for the mass production of large-scale (Gen. 5, 1.43m2) Si thin film solar modules in the last 5 years. We will review major technology advancements which have been mass production proven and led to the mass produced tandem silicon thin film module with 10.0% plus stabilized efficiency, along with the field performance of those modules.

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20

Chen, Lan Li, Sheng Zhao Wang, Ying Peng Yin, and Ming Ji Shi. "Influence of Deposition Temperature on Microcrystalline Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition." Solid State Phenomena 181-182 (November 2011): 401–4. http://dx.doi.org/10.4028/www.scientific.net/ssp.181-182.401.

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The influence of deposition temperature (Ts) on glass/stainless steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at different temperature was investigated by PECVD technology. The crystallization ratio and grain size of the silicon thin film at different deposition temperature is studied. The results reveal that the crystallization ratio and grain size of silicon thin film changed along with Ts. The crystallization ratio and grain size of the silicon thin film become larger when Ts=400 °C. On this work, optimal μc-Si:H can be obtained at 400°C deposition temperature in the suitable experimental conditions.

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21

Wang, Sheng Zhao, Dan Zhang, Ying Peng Yin, Ming Ji Shi, Da Yong Huang, and Jia Hui Yu. "Influence of Radio Frequency Power on Microstructure of Microcrystalline Silicon Films." Solid State Phenomena 181-182 (November 2011): 426–29. http://dx.doi.org/10.4028/www.scientific.net/ssp.181-182.426.

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By PECVD deposition technology, we mainly investigated the influence of PRF (radio frequency power) on glass/steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at 300°C. We study the crystallization ratio, grain size of the silicon thin film specially. The results reveal that the crystallization ratio and grain size of the silicon thin film changed along with RF power. The silicon thin film crystallization ratio and grain size changed sharply when PRF =70 W. On this work we think ideal μc-Si:H can be obtained at PRF= 70 W and in the suitable experimental conditions.

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22

Velut, Paul, Robert Tween, Rémy Teuscher, Yves Leterrier, Jan-Anders E. Månson, Federico Galliano, and Diego Fischer. "Conformal thin film silicon photovoltaic modules." International Journal of Sustainable Energy 33, no. 4 (February 28, 2013): 783–96. http://dx.doi.org/10.1080/14786451.2013.766611.

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23

Xue, Chun Rong, and Xia Yun Sun. "High Efficiency Thin Film Silicon Solar Cells." Advanced Materials Research 750-752 (August 2013): 970–73. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.970.

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High-efﬁciency solar cells based on amorphous silicon technology are designed. Multi-junction amorphous silicon solar cells are discussed, how these are made and how their performance can be understood and optimized. Although significant amount of work has been carried out in the last twenty-five years, the Staebler-Wronski effect has limited the development of a-Si:H solar cells. As an alternative material, nc-Si:H has attracted remarkable attention. Taking advantage of a lower degradation in nc-Si:H than a-Si:H and a-SiGe:H alloys, the light induced degradation in triple junction structures has been minimized by designing a bottom-cell-limited current mismatching, and obtained a stable active-area cell efficiency. All this has been investigated in this paper.

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Nichinte, Akshay, Vishwesh Vyawahare, and Dhiraj Magare. "Seasonal performance estimation of thin film photovoltaic technology." ITM Web of Conferences 32 (2020): 03055. http://dx.doi.org/10.1051/itmconf/20203203055.

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The performance of photovoltaic (PV) module in the environment can be improved by considering the seasonal effects. In this paper, the effect of seasonal variations of Amorphous-Silicon/thin film photovoltaic technology in different seasons has been presented for National Institute of Solar Energy (NISE), Gurgaon site in India. It has been observed that, the estimation efficiency and output power of a-Si technology using module temperature is well match to measured efficiency and output power. This study is mainly very important in India because of the each season’s variation effect on different PV technology will be useful for large scale project assessment.

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Shang, Yingqi, Hongquan Zhang, Weiwei Liu, Dongsa Chen, Shuangyu Wu, and Zuofei Wu. "Research on AlN thin film microstructure processing technology based on ultra-thin cantilever beam structure." AIP Advances 13, no. 3 (March 1, 2023): 035130. http://dx.doi.org/10.1063/5.0132910.

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Aiming at the problem of poor solution selection ratio when the AlN film and porous silicon sacrificial layer are released in the ultra-thin cantilever structure and at the problem of large surface roughness after AlN graphing, the wet corrosion process parameters were optimized, and the influence of different corrosive fluids and corrosion times on the surface roughness of AlN and the influence on the etching rate of AlN were studied, and different process parameters were selected for experiments. According to the experimental results, a suitable microstructure processing method was selected to effectively reduce the surface roughness of AlN and improve the integrity of the AlN film and the reliability and yield of the cantilever structure when the sacrificial layer is released. The microstructure fabrication of AlN films in ultra-thin cantilever structures enables the fabrication of ultra-micro-force sensors, accelerometers, acoustic sensors, and other devices.

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Moschou, Despina, Dimitrios Kouvatsos, Giannis Kontogiannopoulos, Filippos Farmakis, and Apostolos Voutsas. "Technology, performance and degradation characteristics of SLS ELA thin film transistors." Facta universitatis - series: Electronics and Energetics 26, no. 3 (2013): 247–80. http://dx.doi.org/10.2298/fuee1303247m.

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Low temperature polycrystalline silicon thin film transistors (LTPS poly-Si TFTs) are essential for large area electronics and high performance flat panel displays. In recent years, LTPS TFT performance has substantially increased due to the important breakthroughs in the field of polycrystalline silicon crystallization and also due to the optimization of the process steps that differ from those of typical MOSFETs, mainly because of the requirement for low temperature procedures. In this review we present the electrical characteristics of polycrystalline silicon TFTs, crystallized with different variations of the advanced SLS ELA technique, and the determination of process technological parameters that affect the device performance, in order to further optimize the production of such high performance transistors, in terms of poly-Si microstructure, channel dimensions and topology. Also, the effect of these fabrication parameters on device degradation characteristics is studied, with an attempt to model and predict degradation characteristics.

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27

Szindler, M., L. A. Dobrzański, M. M. Szindler, M. Pawlyta, and T. Jung. "Comparison of surface morphology and structure of Al2O3 thin films deposited by sol-gel and ALD methods." Journal of Achievements in Materials and Manufacturing Engineering 2, no. 82 (June 1, 2017): 49–57. http://dx.doi.org/10.5604/01.3001.0010.2354.

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Purpose: of this research was examination Al2O3 thin film obtained with two different method, by sol-gel and ALD, and comparison the surface morphology and structure of deposited thin films. The films deposited on the monocrystalline silicon were tested for their suitability for use in silicon solar cells. Design/methodology/approach: Trimethylaluminum (TMA) was used as a precursor of Al2O3 which is reacted with water enabled the deposition of thin films by ALD method. By the sol-gel method the aluminium tri-sec butoxide (TBA) was used as a precursor to obtain Al2O3 thin films. The aluminium oxide solutions prepared by sol-gel method were deposited by spin coating technique. Examination of the structure and morphology of the surface of the Al2O3 thin films deposited by sol gel and ALD method were performed using atomic force microscope and transmission electron microscope. For the analysis of surface topography deposited thin films atomic force microscope XE-100 from Park Systems was used. Qualitative analysis of the chemical composition was carried out using an energy dispersion spectrometer (EDS). The detailed structural studies were conducted using a Titan 80-300 scanning-transmission electron microscope S/TEM from the FEI Company. Detailed research on the structure of the deposited Al2O3 thin films were performed. The HRTEM images and diffraction SAED were recorded. Findings: The small atoms clusters of a width less than 20 nm were documented. The thin film deposited by spin-coating technique on silicon substrate with 3000 rpm is characterized by RMS and Ra values of, respectively, 0.26 and 0.2 nm. RMS was defined as rough mean square parameter and Ra was defined as the arithmetic mean deviation of the profile from the mean line. An analysis of the frequency histograms of irregularities of the thin film obtained by the spin coating on a silicon substrate at 3000 rpm shows that a large part of them does not exceed 0.5 nm, and the single irregularities reach up to 2.2 nm. When comparing the AFM pictures with the thin films deposited by ALD technique and spin-coating it has been found that the thin films obtained on polished silicon substrates are similar in morphology. The EDS spectra shows the characteristic for oxygen (0.525 keV) and aluminum (1.486 keV) reflections derived from the thin film. In Al2O3 thin film obtained by ALD method the occurrence of α phase of aluminum oxide with a hexagonal structure was identified, just like in the case of thin film deposited by sol-gel. Practical implications: Known aluminium oxide properties and the possibility of obtaining a uniform thin layer show that it can be good material for different application. Precise description of the properties of Al2O3 is very important, since this material is one of the most frequently used in catalyst industry, in medicine, electronics and photovoltaics, as well as a protective layer. The Al2O3 thin film can act as passive and anti-reflective layer simultaneously in silicon solar cell. Using this thin film can simplify the technology of manufacturing silicon solar cells Originality/value: The paper presents researches of aluminium oxide thin films deposited by sol-gel and atomic layer deposition method on monocrystalline silicon.

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Johnson, R. A., P. R. de la Houssaye, C. E. Chang, Pin-Fan Chen, M. E. Wood, G. A. Garcia, I. Lagnado, and P. M. Asbeck. "Advanced thin-film silicon-on-sapphire technology: microwave circuit applications." IEEE Transactions on Electron Devices 45, no. 5 (May 1998): 1047–54. http://dx.doi.org/10.1109/16.669525.

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Mariucci, L., G. Fortunato, A. Pecora, A. Bearzotti, P. Carelli, and R. Leoni. "Hydrogenated amorphous silicon technology for chemically sensitive thin-film transistors." Sensors and Actuators B: Chemical 6, no. 1-3 (January 1992): 29–33. http://dx.doi.org/10.1016/0925-4005(92)80026-t.

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Dominguez, Miguel A., Pedro Rosales, Alfonso Torres, and Mario Moreno. "Development of Low-Temperature Ambipolar a-SiGe:H Thin-Film Transistors Technology." MRS Proceedings 1426 (2012): 169–73. http://dx.doi.org/10.1557/opl.2012.869.

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ABSTRACTWe present the fabrication and characterization of low-temperature ambipolar thin-film transistors (TFTs) based on hydrogenated amorphous silicon-germanium (a-SiGe:H) as active layer. Inverted staggered a-SiGe:H TFTs were fabricated on Corning glass. Spin-on glass silicon dioxide was used as gate dielectric to improve the quality of the dielectric-semiconductor interface. For positive gate bias the transfer characteristic showed n-type TFT behavior, while for negative gate bias p-type behavior was observed. The n-type region exhibits subthreshold slope of 0.45 V/decade while the p-type region shows a subthreshold slope of 0.49 V/decade.

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Adamo, Cristina B., Alexander Flacker, Wilson Freitas, Ricardo C. Teixeira, Michele O. Da Silva, and Antonio L. Rotondaro. "Multi-Chip Module (MCM-D) Using Thin Film Technology." Journal of Integrated Circuits and Systems 10, no. 1 (December 28, 2015): 21–29. http://dx.doi.org/10.29292/jics.v10i1.401.

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Multi-chip Module (MCM) is a technology that can be applied to silicon and alumina modules allowing advantages in the integration complexity. This paper reports a MCM-D (D for deposition) technology suitable to fabricate passive components using two metal levels and non-photosensitive polymer benzocyclobutene as dielectric. The devices are produced using thin film technology, vacuum metallization, electroless and electrolytic deposition, photolithography process and wet etching. Electrical measurements and focused ion beam (FIB) were used to evaluate the characteristics of the MCM-D structures.

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Chen, Kai-Huang, Chien-Min Cheng, Na-Fu Wang, Jia-Cheng Zhou, and Mei-Li Chen. "Bipolar Switching Properties of GdOx:SiO2 Thin Film Resistive Random Access Memory Using Co-Sputtering Technology." Crystals 13, no. 2 (January 17, 2023): 156. http://dx.doi.org/10.3390/cryst13020156.

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Using two kinds of targets (gallium and silicon dioxide) and the rf magnetron sputtering deposited technique, GdOx:SiO2 thin film RRAM devices were deposited on TiN/Si substrate to form a metal–insulator–metal (MIM) structure. In addition, different oxygen concentrations and rf sputtering power parameters were prepared for the GdOx:SiO2 thin films. Decrease of the defects and oxygen vacancies of the GdOx:SiO2 thin films were used and repaired by rapid thermal annealing technology. Indium tin oxide (ITO) as the top electrode on the GdOx:SiO2 thin film was prepared by the physical vapor deposition (PVD) method, and ITO/GdOx:SiO2/TiN/Si structures of the GdOx:SiO2 thin films’ RRAM devices were also made. In addition, the current–voltage curves and devices’ endurance properties were measured by an impedance analyzer. Finally, the crystalline style, the preferred phase, the grain size, and surface microstructure of the thin films were analyzed and observed from X-ray diffraction and field emission scanning electron microscope measurements.

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Fu, Jun Wei, Wei Li, Mao Yang Wu, Min He, and Ya Dong Jiang. "Design and Simulation of Infrared Absorption Based on Hydrogenated Amorphous Silicon Thin Film." Advanced Materials Research 383-390 (November 2011): 4702–7. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.4702.

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Hydrogenated amorphous silicon (a-Si:H) thin film has nowadays attracted much attention in a wide range of electronic applications as in image sensors and in solar cells because of its merits and compatibility with semiconductor technology. In this paper, the background of a-Si:H thin film technology and microbolometer technology has been described in details. According to optical admittance matrix method, the multilayer film system based on a-Si:H thin film was simulated by MatLab software, mainly for the simulation of infrared absorption layers and the simulation of microbolometer. The results show that the combination of TiN film and a-Si:H film is suitable for the design of microbolometer within the middle and far infrared wave band (8-14µm), and the infrared absorptivity of the modified microbolometer can reach over 90%.

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AUBERTON-HERVÉ, A. J., and MICHEL BRUEL. "WHY CAN SMART CUT® CHANGE THE FUTURE OF MICROELECTRONICS?" International Journal of High Speed Electronics and Systems 10, no. 01 (March 2000): 131–46. http://dx.doi.org/10.1142/s0129156400000179.

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Deposition techniques like chemical vapor deposition (CVD) offer to the semiconductor industry the initial flexibility to deposit thin films of key materials on many kinds of substrates. The homoepitaxy or hetroepitaxy techniques using CVD or molecular beam epitaxy (MBE) add the flexibility to get a pure monocrystalline thin film but with a major limitation: the starting substrate has to be monocrystalline. The missing technology has always been the one which allows the growth of a thin monocrystalline film on any kind of substrate. Hydrogen induced splitting (known today as Smart Cut®), discovered at the LETI laboratory in 1991, provides a unique opportunity to get crystalline layers on any kind of substrate. Therefore, a new tool is offered to the semiconductor industry, for new material developments and new structures. This technique is in use in production today on a first application: silicon-on-insulator (SOI) wafers which consist of a monocrystalline film of silicon on a thin amorphous silicon dioxide layer, on top of a silicon wafer. We will discuss the SOI application of the Smart Cut® technology and present other recently demonstrated breakthroughs in new material development, including SiC, compound semiconductor or 3D structures.

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Fredric, C., D. Tarrant, C. Jensen, J. Hummel, and J. Ermer. "CuInSe2 Thin Film Modules for Utility Applications." Journal of Solar Energy Engineering 116, no. 1 (February 1, 1994): 25–27. http://dx.doi.org/10.1115/1.2930060.

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Recent advances in the efficiency and manufacturing technology of CuInSe2 (CIS) thin films demonstrate the opportunity for low-cost large-scale production of photovoltaics for utility applications. Large area (0.4 m2) submodules with 9.7 percent aperture efficiencies yielding 37.8 watts have been fabricated. Thin film fabrication techniques used in the production of modules enable reduced production costs compared with those for single crystal silicon. The performance of 0.4 m2 modules is projected to exceed 50 watts, based on performance achieved to date on 0.1 m2 modules and small area test devices. Preliminary tests packaged (encapsulated and framed) modules show no significant losses after 15 1/2 months of continuous outdoor exposure. Fabrication of 0.4 m2 modules to demonstrate the feasibility of large-scale commercialization of CIS thin film photovoltaics for utility applications is currently under way.

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Wang, Xiao Yan, Qiong Wu, Hai Yan Li, Hai Dong Ju, Hai Yang, Jin Long Luo, Li Ying Pu, Shan Du, and Hai Wang. "Thin Film Solar Cells and their Development Prospects in Yunnan." Advanced Materials Research 651 (January 2013): 29–32. http://dx.doi.org/10.4028/www.scientific.net/amr.651.29.

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Thin-film solar cells (TFSC) have made great progress during the past decade and consequently are now attracting extensive academic and commercial interest because of their potential advantages: lightweight, flexible, low cost, and high-throughput production. The strengths and weaknesses of different thin-film solar cells: amorphous silicon thin-film solar cells, multi-compound thin-film solar cells, organic thin-film solar cells and dye-sensitized solar cells are discussed. Finally, prospects for the development of thin film solar cell technology in Yunnan province are discussed.

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Zhao, Xiao Feng, Dian Zhong Wen, Cui Cui Zhuang, Bing Han, Yue Li, Jing Ya Cao, and Lei Li. "Fabrication and Characteristics of the Nano-Polysilicon Thin Film Transistors." Key Engineering Materials 562-565 (July 2013): 13–17. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.13.

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In this paper, we report the fabrication and characteristics of the top-gated thin film transistors (TFTs) with nanopolysilicon as active layers. The nanopolysilicon thin films were deposited on SiO2 layers by LPCVD and the SiO2 layers were grown on the single silicon substrates. Then the nanopolysilicon thin film transistors with different thin film thicknesses and different channel width length radios were fabricated by CMOS technology, in which the thicknesses of channel layers were 90nm and 120nm, and the channel width length radios were 160μm/160μm, 320μm/160μm and 640μm/160μm, respectively. The experiment results show that drain current is in proportion to channel width length radio. In addition, when the thickness of the nanopolysilicon thin film is 90nm and the channel width length radio is 640μm/160μm, the on/off current radio reaches 106.

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Chen, Lan Li, Jia Hui Yu, Sheng Zhao Wang, and Ming Ji Shi. "Influence of Hydrogen Dilution on Microstructure of μc-Si: H Films." Key Engineering Materials 538 (January 2013): 138–41. http://dx.doi.org/10.4028/www.scientific.net/kem.538.138.

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The influence of hydrogen dilution (D) on glass/stainless steel-based intrinsic amorphous/microcrystalline silicon thin film prepared was investigated by PECVD technology. The crystallization ratio and grain size of the silicon thin film at different hydrogen dilution is studied. The results reveal that the crystallization ratio and grain size of silicon thin film changed along with D. The crystallization ratio and grain size of the silicon thin film become larger when D is higher. However, the deposition rate is slow when the D value is too high. On this work, optimal μc-Si:H can be obtained at D of about 98% in the suitable experimental conditions.

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Fernández, Susana, Ignacio Torres, and José Javier Gandía. "Sputtered Ultrathin TiO2 as Electron Transport Layer in Silicon Heterojunction Solar Cell Technology." Nanomaterials 12, no. 14 (July 16, 2022): 2441. http://dx.doi.org/10.3390/nano12142441.

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This work presents the implementation of ultrathin TiO2 films, deposited at room temperature by radio-frequency magnetron sputtering, as electron-selective contacts in silicon heterojunction solar cells. The effect of the working pressure on the properties of the TiO2 layers and its subsequent impact on the main parameters of the device are studied. The material characterization revealed an amorphous structure regardless of the working pressure; a rougher surface; and a blue shift in bandgap in the TiO2 layer deposited at the highest-pressure value of 0.89 Pa. When incorporated as part of the passivated full-area electron contact in silicon heterojunction solar cell, the chemical passivation provided by the intrinsic a-Si:H rapidly deteriorates upon the sputtering of the ultra-thin TiO2 films, although a short anneal is shown to restore much of the passivation lost. The deposition pressure and film thicknesses proved to be critical for the efficiency of the devices. The film thicknesses below 2 nm are necessary to reach open-circuit values above 660 mV, regardless of the deposition pressure. More so, the fill-factor showed a strong dependence on deposition pressure, with the best values obtained for the highest deposition pressure, which we correlated to the porosity of the films. Overall, these results show the potential to fabricate silicon solar cells with a simple implementation of electron-selective TiO2 contact deposited by magnetron sputtering. These results show the potential to fabricate silicon solar cells with a simple implementation of electron-selective TiO2 contact.

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Vladoiu, Rodica, Aurelia Mandes, Mirela Contulov, Virginia Dinca, and Corneliu Porosnicu. "Investigation of Composition-Properties’ Relations on Silicon and Carbon Based Nanomaterials." Advanced Materials Research 816-817 (September 2013): 232–36. http://dx.doi.org/10.4028/www.scientific.net/amr.816-817.232.

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Multicomponent thin films (binary-SiC and ternary-SiCAl) as well as single thin films (silicon Si) were deposited using Thermionic Vacuum Arc (TVA) technology. The thin films were characterized using X-ray diffractometer (XRD, Philips PW1050, Cu K), scanning electron microscope (SEM, Zeiss EVO 50 SEM) accompanied with energy dispersive spectrometer and transmission electron microscope (TEM, Phillips CM 120 ST, 100 kV). The film is composed of nanoparticles very smoothly distributed of 15-30 nanometer size embedded in amorphous matrix film. The results reveal high hardness for SiC (10-40 GPa) and for SiCAl: low wear rate (6.16E-05 mm3/Nm).

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He, Ziyan, Xu Zhang, Xiaoqin Wei, Dongxiang Luo, Honglong Ning, Qiannan Ye, Renxu Wu, Yao Guo, Rihui Yao, and Junbiao Peng. "Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate." Membranes 12, no. 6 (June 1, 2022): 590. http://dx.doi.org/10.3390/membranes12060590.

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Recently, tin oxide (SnO2) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (VO) concentration leads to poor performance of SnO2 thin films and devices. In this paper, with tetraethyl orthosilicate (TEOS) as the Si source, which can decompose to release heat and supply energy when annealing, Si doped SnO2 (STO) films and inverted staggered STO TFTs were successfully fabricated by a solution method. An XPS analysis showed that Si doping can effectively inhibit the formation of VO, thus reducing the carrier concentration and improving the quality of SnO2 films. In addition, the heat released from TEOS can modestly lower the preparation temperature of STO films. By optimizing the annealing temperature and Si doping content, 350 °C annealed STO TFTs with 5 at.% Si exhibited the best device performance: Ioff was as low as 10−10 A, Ion/Ioff reached a magnitude of 104, and Von was 1.51 V. Utilizing TEOS as an Si source has a certain reference significance for solution-processed metal oxide thin films in the future.

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NIJS, J. F., J. SZLUFCIK, J. POORTMANS, and R. P. MERTENS. "CRYSTALLINE SILICON BASED PHOTOVOLTAICS: TECHNOLOGY AND MARKET TRENDS." Modern Physics Letters B 15, no. 17n19 (August 20, 2001): 571–78. http://dx.doi.org/10.1142/s021798490100204x.

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An overview is given concerning industrial technologies, IMECS's advanced pilot line crystalline silicon solar cell technologies and medium term developments for industrial crystalline silicon terrestrial solar cell fabrication. Also IMEC's work on thin film crystalline silicon solar cells is shortly presented, all of this taking into account the existing market and technology trends.

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Carlson, D. E., K. Rajan, R. R. Arya, F. Willing, and L. Yang. "Advances in amorphous silicon photovoltaic technology." Journal of Materials Research 13, no. 10 (October 1998): 2754–62. http://dx.doi.org/10.1557/jmr.1998.0377.

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With the advent of new multijunction thin film solar cells, amorphous silicon photovoltaic technology is undergoing a commercial revival with about 30 megawatts of annual capacity coming on-line in the next year. These new a−Si multijunction modules should exhibit stabilized conversion efficiencies on the order of 8%, and efficiencies over 10% may be obtained in the next several years. The improved performance results from the development of amorphous and microcrystalline silicon alloy films with improved optoelectronic properties and from the development of more efficient device structures. Moreover, the manufacturing costs for these multijunction modules using the new large-scale plants should be on the order of $1 per peak watt. These modules may find widespread use in solar farms, photovoltaic roofing, as well as in traditional remote applications.

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Hossain, Mohammad Kamal. "Thin Film Solar Cell: Characteristics and Characterizations." Advanced Materials Research 1116 (July 2015): 51–58. http://dx.doi.org/10.4028/www.scientific.net/amr.1116.51.

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In recent decades, due to some urgent and unavoidable issues, such as increasing energy demand, climate change, global warming, etc., the R&D of renewable energies have become inevitable to pave way the sustainable development of human society. In this regard, solar power is widely considered as the most appealing clean energy since there is no other one being as abundant as the sun. The amount of solar energy reaching our earth within one hour equals to the total annual energy need of all of humankind. Since the energy resources on Earth are being exhausted, solar energy have to serve as the main energy source in coming century and beyond. The photovoltaic solar cells developed so far have been based on silicon wafers, with this dominance likely to continue well into the future. The surge in manufacturing volume as well as emerging technologies over the last decade has resulted in greatly decreased costs. Therefore, several companies are now well below the USD 1 W−1 module manufacturing cost benchmark that was once regarded as the lowest possible with this technology. Thin-film silicon, such as hydrogenated amorphous silicon (a-Si), microcrystalline silicon (mc-Si) and related alloys, are promising materials for very low-cost solar cells. Here in this article, a brief description of thin film solar cell technologies followed by deferent state-of-art tools used for characterizing such solar cells are explored. Since characteristics of thin-film solar cells are the main ingredient in defining efficiency, the inherent properties are also mentioned alongside the characterizations.

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Ren, Zhihao, Jikai Xu, Xianhao Le, and Chengkuo Lee. "Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G." Micromachines 12, no. 8 (August 11, 2021): 946. http://dx.doi.org/10.3390/mi12080946.

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Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.

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Birke, P. "Materials for lithium thin-film batteries for application in silicon technology." Solid State Ionics 93, no. 1-2 (December 1996): 1–15. http://dx.doi.org/10.1016/s0167-2738(96)00489-4.

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Meillaud, F., M. Boccard, G. Bugnon, M. Despeisse, S. Hänni, F. J. Haug, J. Persoz, J. W. Schüttauf, M. Stuckelberger, and C. Ballif. "Recent advances and remaining challenges in thin-film silicon photovoltaic technology." Materials Today 18, no. 7 (September 2015): 378–84. http://dx.doi.org/10.1016/j.mattod.2015.03.002.

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Yan, Baojie, Jeffrey Yang, and Subhendu Guha. "Amorphous and nanocrystalline silicon thin film photovoltaic technology on flexible substrates." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30, no. 4 (July 2012): 04D108. http://dx.doi.org/10.1116/1.4707154.

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Gleskova, H., S. Wagner, V. Gašparı́k, and P. Kováč. "150°C Amorphous Silicon Thin-Film Transistor Technology for Polyimide Substrates." Journal of The Electrochemical Society 148, no. 7 (2001): G370. http://dx.doi.org/10.1149/1.1373661.

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Chang, R. P. H., and J. M. Poate. "Workshop Identifies Scientific, Commercial Opportunities for Future Thin Film Research and Technology." MRS Bulletin 16, no. 11 (November 1991): 63–68. http://dx.doi.org/10.1557/s0883769400055548.

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The first International Workshop on the Science and Technology of Thin Films for the 21st Century, held this past summer at Northwestern University, assembled the world's leading experts to assess the trends and opportunities in one of the most fruitful areas of materials research. A complex field, thin film science touches virtually all areas of technology and has had a major economic impact as well. Silicon integrated circuits, for example, form the basis of the computing and telecommunications industries, both noted economic cornerstones.The diverse, highly qualified group of 150 invited speakers and registered participants came to several conclusions:∎ The scientific, technological, and commercial opportunities in this field have never been more exciting. The panel chairs have articulated their findings, and they are presented here in separate reports.∎ Although the thin film field is huge, complex, and interdisciplinary, there are common scientific linkages or driving forces in how the field has developed and is practiced. The discovery of new deposition and fabrication techniques has historically led to new thin film materials. Analysis of the basis molecules of these materials has led to the discovery of new physical and chemical phenomena. And the practitioners of thin film science have traditionally had a lively, realistic interest in applying their work.∎ The funding situation and lack of a coherent national policy in the United States were causes for concern among U.S. workshop participants.

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