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Journal articles on the topic 'Silicon Single Junction Solar Cells'

Author: Grafiati
Published: 7 September 2023

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1

Xu, Juan, Kailiang Zhang, Yujie Yuan, Xinhua Geng, Fang Wang, and Yinping Miao. "Hydrogenated Microcrystalling Silicon Single-Junction NIP Solar Cells." ECS Transactions 44, no. 1 (December 15, 2019): 1263–68. http://dx.doi.org/10.1149/1.3694457.

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2

Hänni, Simon, Grégory Bugnon, Gaetano Parascandolo, Mathieu Boccard, Jordi Escarré, Matthieu Despeisse, Fanny Meillaud, and Christophe Ballif. "High-efficiency microcrystalline silicon single-junction solar cells." Progress in Photovoltaics: Research and Applications 21, no. 5 (May 24, 2013): 821–26. http://dx.doi.org/10.1002/pip.2398.

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3

Söderström, Karin, Grégory Bugnon, Franz-Josef Haug, and Christophe Ballif. "Electrically flat/optically rough substrates for efficiencies above 10% in n-i-p thin-film silicon solar cells." MRS Proceedings 1426 (2012): 39–44. http://dx.doi.org/10.1557/opl.2012.835.

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ABSTRACTSubstrates with extremely low roughness to allow the growth of good-quality silicon material but that nevertheless present high light trapping properties are presented. In a first application, silver reflectors are used in single and tandem-junction amorphous silicon (a-Si:H) solar cells. High initial (stable) efficiencies of 10.4 % (8.1 %) for single-junction a-Si:H cells on glass and 11.1 % (9.2 %) for tandem-junction a-Si:H/a-Si:H cells on plastic are obtained. A second application better suited to multi-junction solar cells based on microcrystalline silicon (μc-Si:H) solar cells is presented: the substrate consists of rough zinc oxide (ZnO) grown on a flat silver reflector which is covered with a-Si:H; polishing of this structure yields an a-Si:H/ZnO interface that provides high light scattering even though the cell is deposited on a flat interface. We present results of ∼ 4-μm-thick μc-Si:H solar cells prepared on such substrates with high open-circuit voltages of 520 mV. A large relative efficiency gain of 20% is observed compared to a co-deposited cell grown directly on an optimized textured substrate.
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4

Zhang, Xiaodan, Bofei Liu, Lisha Bai, Fang jia, Shuo Wang, Qian Huang, Jian Ni, et al. "Advanced Functional Materials: Intrinsic and Doped Silicon Oxide." MRS Proceedings 1771 (2015): 3–8. http://dx.doi.org/10.1557/opl.2015.391.

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ABSTRACTThe unique properties of silicon oxide materials, no matter intrinsic or doped, utilized in thin film solar cells (TFSCs) in the area of photovoltaic (PV) are making TFSCs one of the most attractive photovoltaic technologies for the development of high-performing electricity production units to be integrated in everyday life. In comparison to other silicon materials, the particular diphasic structure of silicon oxide materials, in which hydrogenated microcrystalline silicon (μc-Si:H) crystallites are surrounded by an oxygen-rich hydrogenated amorphous silicon (a-Si:H) phase, causes them present excellent photoelectrical material properties, such as a low-parasitic absorption in the broadband spectral range, independent controllability of longitudinal and lateral conductivity, refractive indices (3.5-2.0), band gap (2.0-2.6 eV) and conductivity tenability (with orders of 1-10-9 S/cm) with oxygen doping, and so on. Various types of silicon oxide materials, including intrinsic, p- or n- type, further applied in TFSCs have also played significant roles in improving the efficiency of various types of single-, dual-, and triple-junction thin-film solar cells from both the optical and electrical points of view. In this paper, we present our latest progress in studying the performance improvement role of intrinsic or doped silicon oxide materials in pin-type a-Si:H, a-SiGe:H, and μc-Si:H single-junction solar cells. By effectively tuning the band gap values of intrinsic a-SiOx:H materials with oxygen doping and adopting the layers with a suitable band gap (1.86 eV) as the P/I buffer layers of a-Si:H solar cells fabricated on metal organic chemical vapor deposition (MOCVD) boron-doped zinc oxide (ZnO:B) substrates, a significant Voc increases up to 909 mV and an excellent external quantum efficiency (EQE) response of 75% at the 400 nm typical wavelength can be achieved by matching the band gap discontinuity between the p-type nc-SiOx:H window and a-Si:H intrinsic layers. The serious leakage current characteristics of pin-type narrow-gap (Eg<1.5 eV) a-SiGe:H single-junction solar cells can also be finely tuned by integrating an n-type μc-SiOx:H layer with a small oxygen content in addition to improving the long-wavelength response, an effective approach gives rise to the highest FF of 70.62% for pin-type a-SiGe:H single-junction solar cells with an average band gap of 1.48 eV. In addition, our studies proved that the application of p-type μc-SiOx:H window layers in μc-Si:H single-junction solar cells can effectively improve the short-wavelength light coupling by suppressing the parasitic absorption and promoting the anti-reflectivity with a graded refractive index profile. On the basis of the optimum single-junction solar cells with omnipotent silicon oxide materials, an initial efficiency of 16.07% has been achieved for pin-type a-Si:H/a-SiGe:H/μc-Si:H triple-junction solar cells with an active area of 0.25 cm2. The omnipotent properties of silicon oxide layers in TFSCs, including effective optical coupling and trapping, suitability in compensating for the band gap discontinuity, the shunt-quenching capacity, and so on, make them likely to be extended to other types of solar cells such as polycrystalline chalcopyrite Cu(In,Ga)Se2 (CIGS) and perovskite-sensitized solar cells, opening up new opportunities for acquiring solar cells with higher performance.
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5

Krügener, J., M. Rienäcker, S. Schäfer, M. Sanchez, S. Wolter, R. Brendel, S. John, H. J. Osten, and R. Peibst. "Photonic crystals for highly efficient silicon single junction solar cells." Solar Energy Materials and Solar Cells 233 (December 2021): 111337. http://dx.doi.org/10.1016/j.solmat.2021.111337.

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6

Isabella, O., S. Solntsev, D. Caratelli, and M. Zeman. "3-D optical modeling of single and multi-junction thin-film silicon solar cells on gratings." MRS Proceedings 1426 (2012): 149–54. http://dx.doi.org/10.1557/opl.2012.897.

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ABSTRACTThree-dimensional (3-D) optical modeling based on Finite Element Method of single, double, and triple junction thin-film silicon solar cells is presented. The combination of front periodic gratings with optimal geometrical parameters and rear ZnO/Ag reflector constitutes an efficient light trapping scheme for solar cells in superstrate (pin) configuration. The application of optimized trapezoidal 1-D and 2-D gratings resulted in 25.5% (1-D case) and 32.5% (2-D case) increase in photo-current density with respect to the flat solar cell. The application of inverted pyramidal 2-D gratings in double and triple junction silicon solar cells with very thin absorber layers resulted in a photo-current density > 11 mA/cm2 and > 9 mA/cm2, respectively.
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7

Hou, Yi, Erkan Aydin, Michele De Bastiani, Chuanxiao Xiao, Furkan H. Isikgor, Ding-Jiang Xue, Bin Chen, et al. "Efficient tandem solar cells with solution-processed perovskite on textured crystalline silicon." Science 367, no. 6482 (March 5, 2020): 1135–40. http://dx.doi.org/10.1126/science.aaz3691.

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Stacking solar cells with decreasing band gaps to form tandems presents the possibility of overcoming the single-junction Shockley-Queisser limit in photovoltaics. The rapid development of solution-processed perovskites has brought perovskite single-junction efficiencies >20%. However, this process has yet to enable monolithic integration with industry-relevant textured crystalline silicon solar cells. We report tandems that combine solution-processed micrometer-thick perovskite top cells with fully textured silicon heterojunction bottom cells. To overcome the charge-collection challenges in micrometer-thick perovskites, we enhanced threefold the depletion width at the bases of silicon pyramids. Moreover, by anchoring a self-limiting passivant (1-butanethiol) on the perovskite surfaces, we enhanced the diffusion length and further suppressed phase segregation. These combined enhancements enabled an independently certified power conversion efficiency of 25.7% for perovskite-silicon tandem solar cells. These devices exhibited negligible performance loss after a 400-hour thermal stability test at 85°C and also after 400 hours under maximum power point tracking at 40°C.
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8

Raj, Vidur, Tuomas Haggren, Wei Wen Wong, Hark Hoe Tan, and Chennupati Jagadish. "Topical review: pathways toward cost-effective single-junction III–V solar cells." Journal of Physics D: Applied Physics 55, no. 14 (December 3, 2021): 143002. http://dx.doi.org/10.1088/1361-6463/ac3aa9.

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Abstract III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with significantly higher absorption compared to silicon. The high absorption allows for the fabrication of thin/ultra-thin solar cells, which in turn permits for the realization of lightweight, flexible, and highly efficient solar cells that can be used in many applications where rigidity and weight are an issue, such as electric vehicles, the internet of things, space technologies, remote lighting, portable electronics, etc. However, their cost is significantly higher than silicon solar cells, making them restrictive for widespread applications. Nonetheless, they remain pivotal for the continuous development of photovoltaics. Therefore, there has been a continuous worldwide effort to reduce the cost of III–V solar cells substantially. This topical review summarises current research efforts in III–V growth and device fabrication to overcome the cost barriers of III–V solar cells. We start the review with a cost analysis of the current state-of-art III–V solar cells followed by a subsequent discussion on low-cost growth techniques, substrate reuse, and emerging device technologies. We conclude the review emphasizing that to substantially reduce the cost-related challenges of III–V photovoltaics, low-cost growth technologies need to be combined synergistically with new substrate reuse techniques and innovative device designs.
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9

CHOBOLA, Z., and A. IBRAHIM. "NOISE AND SCANNING BY LOCAL ILLUMINATION AS RELIABILITY ESTIMATION FOR SILICON SOLAR CELLS." Fluctuation and Noise Letters 01, no. 01 (March 2001): L21—L26. http://dx.doi.org/10.1142/s021947750100010x.

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This paper presents two methods, namely those using noise and homogeneity measurements of a large area solar cells, for determining the local defects, which bring down efficiency and long reliability of single-crystal silicon solar cells. As a result of the non-uniformities (non-homogeneity) in the large junction area, local areas with lower built-in potentials at the junction lead to hot spots and reduced reliability. The two techniques can be used to give a precise description of the quality of the product technology. Correlations between noise and inhomogeneities for an ensemble of 30 silicon solar cell samples are given.
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10

Jheng, Wern-Dare. "Influence of ITO-Silver Wire Electrode Structure on the Performance of Single-Crystal Silicon Solar Cells." Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/654379.

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This study aimed to explore the effect of various electrode forms on single-crystal silicon solar cells by changing their front and back electrode structures. The high light penetration depth of the Indium Tin Oxide (ITO) and the high conductivity of the silver wire that were coated on the single crystal silicon solar cells increased photoelectron export, thus increasing the efficiency of the solar cell. The experiment utilized a sol-gel solution containing phosphorus that was spin coated on single-crystal silicon wafers; this phosphorus also served as a phosphorus diffusion source. A p-n junction was formed after annealing at high temperature, and the substrate was coated with silver wires and ITO films of various structures to produce the electrodes. This study proposed that applying a heat treatment to the aluminum of back electrodes would result in a higher efficiency for single-crystal silicon solar cells, whereas single-crystal silicon solar cells containing front electrodes with ITO film coated with silver wires would result in efficiencies that are higher than those achieved using pure ITO thin-film electrodes.
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11

Masuda, Takashi, Naoya Sotani, Hiroki Hamada, Yasuo Matsuki, and Tatsuya Shimoda. "Fabrication of solution-processed hydrogenated amorphous silicon single-junction solar cells." Applied Physics Letters 100, no. 25 (June 18, 2012): 253908. http://dx.doi.org/10.1063/1.4730614.

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12

Yue, Guozhen, Baojie Yan, Laura Sivec, Tining Su, Yan Zhou, Jeff Yang, and Subhendu Guha. "Hydrogenated Nanocrystalline Silicon based Solar Cell with 13.6% Stable Efficiency." MRS Proceedings 1426 (2012): 33–38. http://dx.doi.org/10.1557/opl.2012.834.

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ABSTRACTMulti-junction solar cells incorporating hydrogenated nanocrystalline silicon (nc-Si:H) exhibit a high current capability and low light-induced degradation. In this paper, we report our recent progress in developing nc-Si:H solar cells using a modified very-high-frequency glow discharge technique. We achieved a short-circuit current density >30 mA/cm2and 10.6% conversion efficiency from single-junction solar cells. Using the improved nc-Si:H cells in an a-Si:H/nc-Si:H/nc-Si:H triple-junction structure, we attained initial and stabilized efficiencies of 13.9% and 13.6%, respectively. Issues related to improving material properties and device structures are addressed. Besides using the conventional techniques, such as hydrogen dilution profiling, optimized Ag/ZnO back reflector, and buffer layers, we found that compensation from Boron and Oxygen micro-doping is also critical in obtaining the above achievements.
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13

Isah, M., C. Doroody, K. S. Rahman, M. N. Harif, S. K. Tiong, and N. Amin. "A numerical analysis of ZnTe/AZO as tunnel junction in CdTe/Si tandem solar cell." IOP Conference Series: Materials Science and Engineering 1278, no. 1 (February 1, 2023): 012003. http://dx.doi.org/10.1088/1757-899x/1278/1/012003.

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Abstract Recently, interest has shifted towards developing multijunction or tandem solar cells due to their high potential to generate higher efficiency than traditional single-junction solar cells. Cadmium telluride (CdTe) and silicon (Si) solar cell materials have demonstrated significant potential in photovoltaic energy generation as tandem structures if fully developed. One approach for optimising CdTe/Si is to develop an effective tunnel junction that can electrically and optically interconnect the cadmium telluride and silicon cells with minimal loss. The wxAMPS 3.0 numerical simulation was used in this work to develop CdTe/Si tandem using zinc telluride/aluminium doped zinc oxide (ZnTe/AZO) as a tunnel junction (TJ). The result obtained shows an optimum efficiency of over 36 % with Voc = 1.945 V, Jsc = 21.519 mA/cm2, and FF = 86.823 % utilising the optimal 200 nm CdTe and Si absorber thickness of 300 μm. An analysis of the demonstrated results suggests that ZnTe/AZO tunnel junction will significantly contribute to the realisation of the CdTe/Si tandem solar cell. Hence, upon inserting a 40 nm highly doped ZnTe/AZO tunnelling junction to a CdTe/Si tandem configuration, the solar cell’s performance was enhanced by 48.190%.
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14

Goswami, Romyani. "Three Generations of Solar Cells." Advanced Materials Research 1165 (July 23, 2021): 113–30. http://dx.doi.org/10.4028/www.scientific.net/amr.1165.113.

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In photovoltaic system the major challenge is the cost reduction of the solar cell module to compete with those of conventional energy sources. Evolution of solar photovoltaic comprises of several generations through the last sixty years. The first generation solar cells were based on single crystal silicon and bulk polycrystalline Si wafers. The single crystal silicon solar cell has high material cost and the fabrication also requires very high energy. The second generation solar cells were based on thin film fabrication technology. Due to low temperature manufacturing process and less material requirement, remarkable cost reduction was achieved in these solar cells. Among all the thin film technologies amorphous silicon thin film solar cell is in most advanced stage of development and is commercially available. However, an inherent problem of light induced degradation in amorphous silicon hinders the higher efficiency in this kind of cell. The third generation silicon solar cells are based on nano-crystalline and nano-porous materials. Hydrogenated nanocrystalline silicon (nc-Si:H) is becoming a promising material as an absorber layer of solar cell due to its high stability with high Voc. It is also suggested that the cause of high stability and less degradation of certain nc-Si:H films may be due to the improvement of medium range order (MRO) of the films. During the last ten years, organic, polymer, dye sensitized and perovskites materials are also attract much attention of the photovoltaic researchers as the low budget next generation PV material worldwide. Although most important challenge for those organic solar cells in practical applications is the stability issue. In this work nc-Si:H films are successfully deposited at a high deposition rate using a high pressure and a high power by Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) technique. The transmission electron microscopy (TEM) studies show the formations of distinct nano-sized grains in the amorphous tissue with sharp crystalline orientations. Light induced degradation of photoconductivity of nc-Si:H materials have been studied. Single junction solar cells and solar module were successfully fabricated using nanocrystalline silicon as absorber layer. The optimum cell is 7.1 % efficient initially. Improvement in efficiency can be achieved by optimizing the doped layer/interface and using Ag back contact.
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Gong, Xinzhi, Yuting Chen, and Miaomeng Liang. "Theoretical study of building-integrated photovoltaics based on perovskite single junction and perovskite/silicon tandem solar cells." Energy Exploration & Exploitation 38, no. 3 (November 27, 2019): 723–32. http://dx.doi.org/10.1177/0144598719889661.

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Considering the perovskite-based building-integrated photovoltaics, we use the single box model of 4 × 4 × 3 m3 to illustrate a promising solution for the zero-energy residential building and the distributed power generators in the Wuhan urban area in China (N30° E114°), where we have the high ratio of façades on the tall buildings. According to our estimation, the energy gains from the solar cells on the façades could be competitive with the ones on the rooftops. In comparison with the perovskite/silicon tandem solar cells, the perovskite-based single-junction solar cells could boost the annual energy gains more than 1.5 times on the façades. It is because of the perovskite-based single-junction solar cells being less angle-dependent, even if their efficiencies under the vertical illumination are lower than that of the perovskite/silicon tandem solar cells. Within the same single box, the energy demands caused by the air-conditioning system are simulated by the program THERB with 100 and 65% solar irradiation; the previous one is the standard case, and the later one assumes that 35% of solar irradiation is converted to the electricity. To control the indoor temperature above 18°C in winter and below 26°C in summer, the single box could achieve zero-energy demand except for January and December. And the annual surplus photovoltaic energy gains of 3071 kW h could be used as the distributed generator for the resident downstairs.
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16

Lun, Shu-xian, Jing-shu Sang, and Ting-ting Guo. "A New Six-Parameter Model Based on Chebyshev Polynomials for Solar Cells." Mathematical Problems in Engineering 2015 (2015): 1–13. http://dx.doi.org/10.1155/2015/145258.

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This paper presents a new current-voltage (I-V) model for solar cells. It has been proved that series resistance of a solar cell is related to temperature. However, the existing five-parameter model ignores the temperature dependence of series resistance and then only accurately predicts the performance of monocrystalline silicon solar cells. Therefore, this paper uses Chebyshev polynomials to describe the relationship between series resistance and temperature. This makes a new parameter called temperature coefficient for series resistance introduced into the single-diode model. Then, a new six-parameter model for solar cells is established in this paper. This new model can improve the accuracy of the traditional single-diode model and reflect the temperature dependence of series resistance. To validate the accuracy of the six-parameter model in this paper, five kinds of silicon solar cells with different technology types, that is, monocrystalline silicon, polycrystalline silicon, thin film silicon, and tripe-junction amorphous silicon, are tested at different irradiance and temperature conditions. Experiment results show that the six-parameter model proposed in this paper is anI-Vmodel with moderate computational complexity and high precision.
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17

Smirnov, V., F. Urbain, A. Lambertz, and F. Finger. "High Stabilized Efficiency Single and Multi-junction Thin Film Silicon Solar Cells." Energy Procedia 102 (December 2016): 64–69. http://dx.doi.org/10.1016/j.egypro.2016.11.319.

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18

Yue, Guozhen, Baojie Yan, Gautam Ganguly, Jeffrey Yang, and Subhendu Guha. "Metastability in hydrogenated nanocrystalline silicon solar cells." Journal of Materials Research 22, no. 5 (May 2007): 1128–37. http://dx.doi.org/10.1557/jmr.2007.0144.

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Light-induced metastability in hydrogenated nanocrystalline silicon (nc-Si:H) single-junction solar cells was studied systematically. First, we observed no light-induced degradation when the photon energy was lower than the band gap of the amorphous phase; degradation occurred when the energy was higher than the band gap in the amorphous phase. The light-induced degradation could be annealed away at an elevated temperature. We concluded that the light-induced defect generation occurred mainly in the amorphous phase. Second, forward current injection did not degrade the nc-Si:H cell performance. However, a reverse bias during light soaking enhanced the degradation. Third, the nc-Si:H cells made with an optimized hydrogen dilution profile showed minimal degradation although these cells had a high amorphous volume fraction. This indicated that the amorphous volume fraction was not the only factor determining the degradation. Other factors also played important roles in the nc-Si:H stability.
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19

Muralidharan, Pradyumna, Stephen M. Goodnick, and Dragica Vasileska. "Multiscale modeling of transport in silicon heterojunction solar cells." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, DPC (January 1, 2017): 1–15. http://dx.doi.org/10.4071/2017dpc-tha3_presentation1.

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Silicon based single junction solar cell technology continued to make significant strides in the past year with new world record module efficiencies being reported for the Panasonic heterojunction with thin intrinsic layer (HIT) module (23.8%) and the SunPower rooftop silicon module (24.1%). The HIT cell which is comprised of amorphous silicon (a-Si) and crystalline silicon (c-Si) currently holds the world record efficiency (25.6%) for a silicon based single junction solar cell. Further improvement in this technology requires a rigorous understanding of the underlying physics of the device. The device performance of a-Si and c-Si heterojunction solar cells depends heavily on the nature of transport at the hetero interface and defect assisted transport through the a-Si. Different microscopic processes dominate transport in different regions of the device and take place across widely varying time scales. In this work we present a multiscale model which utilizes different simulation methodologies to study physics in various regions of the device, namely, the Ensemble Monte Carlo (EMC), Kinetic Monte Carlo (KMC), and Drift Diffusion (DD) solvers. The EMC studies the behavior of the photogenerated carriers at the heterointerface; the KMC analyzes transport of the photogenerated carriers through the intrinsic amorphous silicon (i-a-Si) barrier layer; and the DD solver calculates current and other device properties in the low field regions of the cell. These solvers are then self consistently coupled to analyze device performance. Previously, our KMC simulations have shown that hopping is the main mode of transport through the i-a-Si, and the photogenerated carries are collected by defect emission rather that Poole - Frenkel emission or direct tunneling1. In addition, using EMC simulations we have shown that the photogenerated carriers exhibit non Maxwellian behavior at the heterointerface2. This work specifically describes the self-consistent coupling of the DD and EMC solvers. By adding the EMC solver to the multiscale solver we are able to capture the high field behavior of the photogenerated carriers, and its affect on device parameters such as JSC, VOC, FF and efficiency.
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Kosarian, Abdolnabi, and Peyman Jelodarian. "Modeling and Optimization of Advanced Single- and Multijunction Solar Cells Based on Thin-Film a-Si:H/SiGe Heterostructure." ISRN Renewable Energy 2011 (December 11, 2011): 1–8. http://dx.doi.org/10.5402/2011/712872.

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In amorphous thin-film p-i-n solar cell, a thick absorber layer can absorb more light to generate carriers. On the other hand, a thin i-layer cannot absorb enough light. Thickness of the i-layer is a key parameter that can limit the performance of solar cell. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. Especially, current density of the cell can be enhanced without deteriorating its open circuit voltage, due to the modulation of material band-gap and the formation of a heterostructure. This work presents a novel numerical evaluation and optimization of an amorphous silicon double-junction structure thin-film solar cell (a-SiGe:H/a-Si:H) and focuses on optimization of a-SiGe:H mid-gap single-junction solar cell based on the optimization of the Ge content in the film, thickness of i-layer, p-layer and doping concentration of p-layer in a (p-layer a-Si:H/i-layer a-SiGe:H/n-layer a-Si:H) single-junction thin-film solar cell. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6.5% compared with the traditional a-Si:H solar cells.
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21

Hossain, Mohammad I., Adnan Mohammad, Wayesh Qarony, Saidjafarzoda Ilhom, Deepa R. Shukla, Dietmar Knipp, Necmi Biyikli, and Yuen Hong Tsang. "Atomic layer deposition of metal oxides for efficient perovskite single-junction and perovskite/silicon tandem solar cells." RSC Advances 10, no. 25 (2020): 14856–66. http://dx.doi.org/10.1039/d0ra00939c.

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22

Ho, Wen-Jeng, Jheng-Jie Liu, and Bo-Xun Ke. "Characterization of Luminescent Down-Shifting Spectral Conversion Effects on Silicon Solar Cells with Various Combinations of Eu-Doped Phosphors." Materials 15, no. 2 (January 7, 2022): 452. http://dx.doi.org/10.3390/ma15020452.

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Luminescent down-shifting (LDS) spectral conversion is a feasible approach to enhancing the short-wavelength response of single junction solar cells. This paper presents the optical and electrical characteristics of LDS spectral conversion layers containing a single species or two species of Eu-doped phosphors applied to the front surface of silicon solar cells via spin-on coating. The chemical composition, surface morphology, and fluorescence emission of the LDS layers were respectively characterized using energy-dispersive X-ray analysis, optical imaging, and photoluminescence measurements. We also examined the LDS effects of various phosphors on silicon solar cells in terms of optical reflectance and external quantum efficiency. Finally, we examined the LDS effects of the phosphors on photovoltaic performance by measuring photovoltaic current density–voltage characteristics using an air-mass 1.5 global solar simulator. Compared to the control cell, the application of a single phosphor enhanced efficiency by 17.39% (from 11.14% to 13.07%), whereas the application of two different phosphors enhanced efficiency by 31.63% (from 11.14% to 14.66%).
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23

Fonrodona, M., D. Soler, F. Villar, J. Escarré, J. M. Asensi, J. Bertomeu, and J. Andreu. "Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD." Thin Solid Films 501, no. 1-2 (April 2006): 247–51. http://dx.doi.org/10.1016/j.tsf.2005.07.146.

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24

Jung, Yeonwoong, Xiaokai Li, Nitin K. Rajan, André D. Taylor, and Mark A. Reed. "Record High Efficiency Single-Walled Carbon Nanotube/Silicon p–n Junction Solar Cells." Nano Letters 13, no. 1 (December 17, 2012): 95–99. http://dx.doi.org/10.1021/nl3035652.

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25

Riaz, Muhammad, S. K. Earles, Ahmed Kadhim, and Ahmad Azzahrani. "Computer analysis of microcrystalline silicon hetero-junction solar cell with lumerical FDTD/DEVICE." International Journal of Computational Materials Science and Engineering 06, no. 03 (September 2017): 1750017. http://dx.doi.org/10.1142/s2047684117500178.

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The computer analysis of tandem solar cell, c-Si/a-Si:H/[Formula: see text]c-SiGe, is studied within Lumerical FDTD/Device 4.6. The optical characterization is performed in FDTD and then total generation rate is transported into DEVICE for electrical characterization. The electrical characterization of the solar cell is carried out in DEVICE. The design is implemented by staking three sub cells with band gap of 1.12[Formula: see text]eV, 1.50[Formula: see text]eV and 1.70[Formula: see text]eV, respectively. First, single junction solar cell with both a-Si and [Formula: see text]c-SiGe absorbing layers are designed and compared. The thickness for both layers are kept the same. In a single junction, solar cell with a-Si absorbing layer, the fill factor and the efficiency are noticed as [Formula: see text], and [Formula: see text]. For [Formula: see text]c-SiGe absorbing layer, the efficiency and fill factor are increased as [Formula: see text] and [Formula: see text], respectively. Second, for tandem thin film solar cell c-Si/a-Si:H/[Formula: see text]c-SiGe, the fill factor [Formula: see text] and efficiency [Formula: see text] have been noticed. The maximum efficiency for both single junction thin film solar cell c-Si/[Formula: see text]c-SiGe and tandem solar cell c-Si/a-Si:H/[Formula: see text]c-SiGe are improved with check board surface design for light trapping.
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26

Salim, Sartaz Tabinna, Sayeda Anika Amin, K. M. A. Salam, and Mir Abdulla Al Galib. "Performance Analysis of a Multijunction Photovoltaic Cell Based on Cadmium Selenide and Cadmium Telluride." Advanced Materials Research 875-877 (February 2014): 1058–62. http://dx.doi.org/10.4028/www.scientific.net/amr.875-877.1058.

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A multi-junction photovoltaic cell based on group II-VI Cadmium Selenide (CdSe) and Cadmium Telluride (CdTe) with a single layer anti-reflective coating of Silicon Di Oxide (SiO2) has been introduced. In this paper we have performed a comparison of solar energy absorption of CdSe/CdTe cell with existing single and multi-junction cells. The cell has shown significant photon absorption in the spectral range of 300nm-2000nm with an efficiency of 34.6% under terrestrial AM1.5, 1 sun condition.
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27

Ingler, William B., and Abbasali Naseem. "Indium oxide/indium iron oxide thin films for photoelectrochemical hydrogen production with a-silicon solar cells." Journal of Materials Research 25, no. 1 (January 2010): 25–31. http://dx.doi.org/10.1557/jmr.2010.0010.

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In this paper we focus on indium oxide and indium iron oxide as an alloy to fabricate a protective thin film (transparent, conductive, and corrosion resistant; TCCR) for amorphous silicon-based solar cells, which can be used in immersion-type photoelectrochemical cells for hydrogen production. From the work completed, the results indicate that samples made at 250 °C with indium and indium iron oxide targets powered at 30 and 100 W, respectively, and a sputter deposition time of 90 min produced optimal results when deposited directly on single-junction amorphous silicon solar cells. At 0.65 V (versus SCE), the best sample conditions display a maximum current density of 21.4 μA/cm2.
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Chatterjee, Somenath, Sumeet Singh, and Himangshu Pal. "Effect of Multijunction Approach on Electrical Measurements of Silicon and Germanium Alloy Based Thin-Film Solar Cell Using AMPS-1D." International Journal of Photoenergy 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/653206.

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Multijunction solar cells designed from silicon (Si)-germanium (Ge) alloy based semiconductor materials exhibit high theoretical efficiencies (19.6%) compared to the single junction one. The modeling calculations for all solar cells are done by AMPS 1D simulator. The structure of multi-junction i-layer is designed using heterolayers, starting from pure crystalline Si and increase of Ge mole fraction by 25% until pure Ge layer is reached. The top layer has the largest band gap, while the bottom layer has the smallest bandgap. This design allows less energetic photons to pass through the upper layer(s) and be absorbed by the layer below, which increases the overall efficiency of the solar cell. Material parameters required to model the absorber layers are calculated and incorporated in the AMPS 1D simulator for optimizing of solar cell parameter values. Simulation results show that considerable efficiency enhancement can be obtained from the addition of the multi-junction layer.
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29

Tseng, Y. W., Y. H. Lin, H. J. Hsu, C. H. Hsu, and C. C. Tsai. "Development of a-SiOx:H/a-Si1-xGex:H Tandem Solar Cell for Triple-Junction Solar Cell Applications." MRS Proceedings 1426 (2012): 125–30. http://dx.doi.org/10.1557/opl.2012.1412.

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ABSTRACTIn this work, the development of hydrogenated amorphous silicon oxide (a-SiOx:H) absorber, a-SiOx:H single-junction solar cells and a-SiOx:H/a-Si1-xGex:H tandem solar cells were presented. The oxygen content of the a-SiOx:H materials controlled by changing CO2-to-SiH4 flow ratio had significant influence on its opto-electrical property. As CO2/SiH4 increased from 0 to 2, the bandgap increased from 1.75 to 2.13 eV while the photo-conductivity decreased from 8.25×10-6 to 1.02×10-8 S/cm. Photo-response of over 105 can be obtained as the bandgap was approximately 1.90 eV. The performance of single-junction solar cells revealed a better efficiency can be obtained as the absorber bandgap was in the range of 1.83 to 1.90 eV. Further increase of the absorber bandgap may lead to the increase in bulk defect density which deteriorated the cell efficiency. Finally, a-SiOx:H/a-Si1-xGex:H tandem solar cell was fabricated with the absorber bandgap of 1.90 eV in the top cell. By matching the current between the component cells, the tandem cell efficiency of 7.38% has been achieved.
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30

Su, Tining, Baojie Yan, Laura Sivec, Guozhen Yue, Jessica Owens-Mawson, Jeffrey Yang, and Subhendu Guha. "Nanostructured Silicon Oxide Dual-Function Layer in Amorphous Silicon Based Solar Cells." MRS Proceedings 1426 (2012): 69–74. http://dx.doi.org/10.1557/opl.2012.1015.

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ABSTRACTWe report the results of using n-type hydrogenated nanocrystalline silicon oxide alloy (nc-SiOx:H) in hydrogenated nanocrystalline silicon (nc-Si:H) and amorphous silicon germanium alloy (a-SiGe:H) single-junction solar cells. We used VHF glow discharge to deposit nc-SiOx:H layers on various substrates for material characterizations. We also used VHF glow discharge to deposit the intrinsic layer in nc-Si:H solar cells. RF glow discharge was used for the deposition of the doped layers and the intrinsic layer in a-SiGe:H solar cells. Various substrates such as stainless steel (SS), Ag coated SS, and ZnO/Ag coated SS were used for different cell structures. We found that by using nc-SiOx:H to replace the ZnO and the a-Si:H n-layer in nc-Si:H solar cells, the cell structure is greatly simplified, while the cell performances remain nearly identical to those made using the conventional n-i-p structure on standard ZnO/Ag BR’s. Solar cells with nc-SiOx:H as the n layer directly deposited on textured Ag show similar quantum efficiency (QE) as the n-i-p cells on ZnO/Ag BRs. In both cases, QE is higher than that in the n-i-p cells made directly on Ag coated SS. This effect is probably caused by the shift of surface plasmon-polariton resonance frequency due to the difference in index of refraction of ZnO, nc-SiOx:H, and Si.
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31

J., Fatima Rasheed, and V. Suresh Babu. "Investigations on Optical, Material and Electrical Properties of aSi:H and aSiGe:H in Making Proposed n+aSi:H/i-aSi:H/p+aSiGe:H Graded Bandgap Single-junction Solar Cell." Nanoscience & Nanotechnology-Asia 10, no. 5 (November 11, 2020): 709–18. http://dx.doi.org/10.2174/2210681209666190627152852.

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Objective: This work identifies materials that satisfy refractive index, optical band gap, composition profile, conductivity, hall mobility, carrier type and carrier concentration to utilize them in making thin film photovoltaic cells. Methods: We fabricated phosphorous doped amorphous silicon (n+ aSi:H), boron doped amorphous silicon germanium(p+ aSiGe:H) and intrinsic amorphous silicon (i-aSi:H). A detailed and systematic characterization of the fabricated layers was done. The phosphorous doped amorphous silicon (n+ aSi:H) showed an optical band gap of 1.842 eV and an electron mobility of 295.45 cm2V-1s-1. The boron doped amorphous silicon germanium (p+ aSiGe:H) exhibited an optical band gap of 1.74 eV and a hole mobility of 158.353 cm2V-1s-1. The intrinsic amorphous silicon (i-aSi:H) has an optical band gap of 1.801 eV. The films of n+ aSi:H, i-aSi:H and p+ aSiGe:H can be utilized for fabricating graded band gap single junction thin film solar cells, as they are semiconducting materials with varying band gaps in the range of 1.74 eV to 1.84 eV. The tailoring of band gap achieved by the proposed material combination has been presented using its energy band diagram. Results: In this work, we are proposing a single junction graded band gap solar cell with aSi:H and aSi- Ge:H alloys of varying doping to achieve grading of band gap, which improves the efficiency while keeping the cell compact and light. Conclusion: As a first step in the validation, we have simulated a thin film solar cell using SCAPS1D simulation software with the measured parameters for each of the layers and found that it successfully performs as solar cell with an efficiency of 14.5%.
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Jelodarian, Peyman, and Abdolnabi Kosarian. "Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect." International Journal of Photoenergy 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/946024.

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The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H) thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.
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33

HADJ KOUIDER, Wafa, Abbas BELFAR, Mohammed BELMEKKI, and Hocine AIT-KACI. "Window Layer Thickness Effect on Amorphous Silicon Oxide Solar Cell Performances." Algerian Journal of Renewable Energy and Sustainable Development 2, no. 01 (June 15, 2020): 67–74. http://dx.doi.org/10.46657/ajresd.2020.2.1.10.

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The recent research and developments of a-Si:H based solar cells have greatly promoted its position as low cost solar cell. Unfortunately, a-Si:H solar cells suffer appreciable light induced degradation for thickness greater than 200nm. It has been reported that boron doped hydrogenated amorphous silicon oxide (p-a-SiOx:H) films have a low temperature coefficient compared to those based on hydrogenated amorphous silicon (p-a-Si:H) . Moreover, the solar cells with a p-a-SiOx: H generate more electricity than the solar cells with p-a-Si: H window layer due to the wider band gap (Eg) of these films. We present in this paper a computer simulation on the effects of window layer thickness on the performances of single junction amorphous silicon oxide solar cells. We varied the thickness of the window layer from 5 nm to 25 nm and our simulation results showed that cells parameters are significantly affected window layer thickness. However, the film thickness of the p-a-SiOx:H window layer increased from 5 nm to 25 nm, the power conversion efficiency (PCE) of the solar cells respectively decreased in the ranges of 5.733% to 5.271% .the simulation data are in good agreement with the literature
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34

Purwandari, Endhah, and Toto Winata. "Efficiency Calculation Analysis of A-Si:H Solar Cells for Determination of Optimum Filament Temperature in Material Deposition." Jurnal ILMU DASAR 14, no. 1 (January 6, 2013): 29. http://dx.doi.org/10.19184/jid.v14i1.478.

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Solar cell efficiency as a function of the energy gap has been simulated by calculating the output current characteristics of the devices based on the distribution of charge carriers, obtained from the solution of the Poisson equation and the Continuity equation. The hydrogenated amorphous silicon (a-Si:H) based solar cell, has simulated in the form of one-dimensional single junction p/i/n. The junction structure of a-SiC:H/a-Si:H/a-Si:H designed have the thickness of 0,015 μm/0,550 μm/0,030 μm, respectively. For simulation, the energy gap has considered constant in the p and n layers, whereas the i layer varies according to the empirical data of energy gap obtained from the deposition parameters of filament temperature. Simulations performed using the finite element method supported by FEMLAB software. Based on simulation results, obtained the highest efficiency of 9.35% corresponds to the lowest energy gap data of 1.706 eV for layer i. This appropriates to the filament temperature of 800oC and subsequently used as the optimum deposition parameters of the material. Keyword: Energy gap, efficiency, FEM, solar cell, hydrogenated amorphous silicon
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35

Santana, Guillermo, and Arturo Morales-Acevedo. "IMPROVING n+pp+ SINGLE CRYSTALLINE SILICON SOLAR CELLS BY LONG HIGH TEMPERATURE Al ANNEALING." Modern Physics Letters B 15, no. 17n19 (August 20, 2001): 601–4. http://dx.doi.org/10.1142/s0217984901002099.

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In this work, we show that solar cells made on solar grade silicon can be improved by annealing them at high temperatures (800° C) after the aluminum at the back is evaporated. This improvement is larger for longer annealing times. Both the short circuit current (Isc) and the open circuit voltage (Voc) increase due to an increase of the base minority carrier diffusion length and a reduction of dark current, respectively. This effect may be due to "gettering" of metallic impurities and precipitates at the bulk and junction regions of the cells. For this high annealing temperature we observed that the increase of Jsc tends to saturate after 60 minutes, while Voc continues increasing for annealing times above 150 minutes.
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36

Saeed, Ahmed, Mostafa M. Salah, Abdelhalim Zekry, Mohamed Mousa, Ahmed Shaker, Mohamed Abouelatta, Fathy Z. Amer, Roaa I. Mubarak, and Dalia S. Louis. "Investigation of High-Efficiency and Stable Carbon-Perovskite/Silicon and Carbon-Perovskite/CIGS-GeTe Tandem Solar Cells." Energies 16, no. 4 (February 8, 2023): 1676. http://dx.doi.org/10.3390/en16041676.

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The primary purpose of recent research on solar cells is to achieve a higher power conversion efficiency with stable characteristics. To push the developments of photovoltaic (PV) technology, tandem solar cells are being intensively researched, as they have higher power conversion efficiency (PCE) than single-junction cells. Perovskite solar cells (PSCs) are recently used as a top cell of tandem solar cells thanks to their tunable energy gap, high short circuit current, and low cost of fabrication. One of the main challenges in PSCs cells is the stability issue. Carbon perovskite solar cells (CPSCs) without a hole transport material (HTM) presented a promising solution for PSCs’ stability. The two-terminal monolithic tandem solar cells demonstrate the commercial tandem cells market. Consequently, all the proposed tandem solar cells in this paper are equivalent to two-terminal monolithic tandem devices. In this work, two two-terminal tandem solar cells are proposed and investigated using the SCAPS-1D device simulator. Carbon perovskite solar cell (CPSC) without hole transport material (HTM) is used as the top cell with a new proposed gradient doping in the perovskite layer. This proposal has led to a substantial enhancement of the stability issue known to be present in carbon perovskite cells. Moreover, a higher PCE, exceeding 22%, has been attained for the proposed CPSC. Two bottom cells are examined, Si and CIGS-GeTe solar cells. The suggested CPSC/Si and CPSC/CIGS-GeTe tandem solar cells have the advantage of having just two junctions, which reduces the complexity and cost of solar cells. The performance parameters are found to be improved. In specific, the PCEs of the two proposed cells are 19.89% and 24.69%, respectively.
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37

Ou-Yang, Wei, Takaaki Manaka, Seiichi Naitou, Kyoji Kunitomo, and Mitsumasa Iwamoto. "Optical Second-Harmonic Generation in Hydrogenated Amorphous Silicon Single- and Double-Junction Solar Cells." Japanese Journal of Applied Physics 51, no. 7R (July 1, 2012): 070209. http://dx.doi.org/10.7567/jjap.51.070209.

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38

Ou-Yang, Wei, Takaaki Manaka, Seiichi Naitou, Kyoji Kunitomo, and Mitsumasa Iwamoto. "Optical Second-Harmonic Generation in Hydrogenated Amorphous Silicon Single- and Double-Junction Solar Cells." Japanese Journal of Applied Physics 51 (July 3, 2012): 070209. http://dx.doi.org/10.1143/jjap.51.070209.

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39

Baytemir, Gulsen, Firat Es, Arif Sinan Alagoz, and Rasit Turan. "Radial junction solar cells prepared on single crystalline silicon wafers by metal-assisted etching." physica status solidi (RRL) - Rapid Research Letters 11, no. 5 (February 27, 2017): 1600444. http://dx.doi.org/10.1002/pssr.201600444.

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40

Dosymbetova, Gulbakhar, Saad Mekhilef, Ahmet Saymbetov, Madiyar Nurgaliyev, Ainur Kapparova, Sergey Manakov, Sayat Orynbassar, et al. "Modeling and Simulation of Silicon Solar Cells under Low Concentration Conditions." Energies 15, no. 24 (December 12, 2022): 9404. http://dx.doi.org/10.3390/en15249404.

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Today’s research on concentrated photovoltaic (CPV) cells focuses on creating multi-junction semiconductor solar cells capable of withstanding high temperatures without losing their properties. This paper investigated silicon low concentrated photovoltaic (LCPV) devices using Fresnel lenses. The parameters of the silicon CPV cell were measured to simulate its operation based on a single-diode model with four and five parameters. The most optimal position of the Fresnel lens relative to the solar cell was shown, and the dependence of the CPV efficiency on the concentration ratio, incident solar power, and temperature was studied. Experiments on heating of a solar cell were conducted to build a model of heating of a solar cell under different solar radiation based on machine learning. Additionally, a cooling system was developed, and experiments were conducted for one LCPV cell. The resulting LCPV model was used to predict electrical power output and temperature change pattern using clear day data. Results of modeling show increase in generated energy by 27% compared with non-concentrated solar cells. Cooling system energy consumption was simulated, and the optimum cooling regime was determined. The proposed LCPV system can be used as a hybrid heat and electricity source, increase power generation, and does not require new solar cell production technologies.
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41

Kopecek, Radovan, Florian Buchholz, Valentin D. Mihailetchi, Joris Libal, Jan Lossen, Ning Chen, Haifeng Chu, et al. "Interdigitated Back Contact Technology as Final Evolution for Industrial Crystalline Single-Junction Silicon Solar Cell." Solar 3, no. 1 (December 22, 2022): 1–14. http://dx.doi.org/10.3390/solar3010001.

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We present our own Interdigitated Back Contact (IBC) technology, which was developed at ISC Konstanz and implemented in mass production with and at SPIC Solar in Xining, China, with production efficiencies of over 24%. To our knowledge, this is the highest efficiency achieved in the mass production of crystalline silicon solar cells without the use of charge-carrier-selective contacts. With an adapted screen-printing sequence, it is possible to achieve open-circuit voltages of over 700 mV. Advanced module technology has been developed for the IBC interconnection, which is ultimately simpler than for conventional double-sided contacted solar cells. In the next step, we will realize low-cost charge-carrier-selective contacts for both polarities in a simple sequence using processes developed and patented at ISC Konstanz. With the industrialisation of this process, it will be possible to achieve efficiencies well above 25% at low cost. We will show that with the replacement of silver screen-printed contacts by copper or aluminium metallisation, future IBC technology will be the end product for the PV market, as it is the best performing c-Si technology, leading to the lowest cost of electricity, even in utility-scale applications.
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42

Zhao, Song, Hua Zhou, Shu-Ying Wang, Han Fei, Si-Han Jiang, and Xiang-Qian Shen. "Design of high efficiency perovskite/silicon tandem solar cells based on plasmonic enhancement of metal nanosphere." Acta Physica Sinica 71, no. 3 (2022): 038801. http://dx.doi.org/10.7498/aps.71.20211585.

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Perovskite/silicon tandem solar cells, by combining perovskite as a top absorber material and crystalline silicon as a bottom absorber material, can expand and enhance the utilization of solar spectrum. Therefore, such a tandem structure shows great potential to break through the Shockley-Queisser (SQ) limit of 31%－33% for single-junction (SJ) solar cells and is considered as one of the most promising approaches to achieving the higher performance in photoelectric conversion of solar cells. Reducing the optical losses from the surface and interfaces of cell device and making more photons propagate into the active layers are the key factors for achieving the goal. In this paper, the enhancement of spectral response and energy conversion efficiency of perovskite/silicon tandem solar cells depending on Au, Ag, Cu, Al nanosphere are studied by using the finite difference time domain method and rigorous coupled-wave analysis. The results show that owing to the introduction of metal nanosphere, the transmittance of photons propagating into the active material is promoted significantly. Therefore, the cell device achieves an apparent increase both in total absorbance and in quantum efficiency. The observed weighted average transmittance and energy conversion efficiency are increased from 73.16% and 23.09% to 79.15% and 24.97%, respectively, with an 8.14% improvement for the perovskite/silicon tandem solar cells coated with the optimized Al nanospheres.
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43

Osayemwenre, Gilbert, and Edson Meyer. "Mechanical Degradation Analysis of an Amorphous Silicon Solar Module." Energies 13, no. 16 (August 10, 2020): 4126. http://dx.doi.org/10.3390/en13164126.

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This work examines the degradation of photovoltaic modules. It assesses the structural defects of amorphous silicon solar cells, which result from mechanical stress at nanoscale level. Firstly, it analyses the interface morphology, deformation, and internal delamination of a single junction amorphous silicon solar module. Secondly, it explores the interface deformation of the layers of the defective region of the module with some statistical tools including root mean root (RSM) and arithmetic mean (Rq). It used the aforementioned tools to demonstrate the effect of microstructural defects on the mechanical behaviour of the entire layers of the module. The study established that the defect observed in the module, emanated from long-term degradation of the a-Si solar cells after years of exposure to various light and temperature conditions. It tested the mechanism of mechanical degradation and its effect on the reliability and stability of the defective and non-defective regions of the module with adhesion force characterisation.
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44

Lin, Yang-Shin, Shui-Yang Lien, Chao-Chun Wang, Chia-Hsun Hsu, Chih-Hsiang Yang, Asheesh Nautiyal, Dong-Sing Wuu, Pi-Chuen Tsai, and Shuo-Jen Lee. "Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells." International Journal of Photoenergy 2011 (2011): 1–5. http://dx.doi.org/10.1155/2011/264709.

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The amorphous silicon/amorphous silicon (a-Si/a-Si) tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+recombination layer and i2/i1thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc) of 1.59 V, short-circuit current density (Jsc) of 7.96 mA/cm2, and a fill factor (FF) of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.
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45

Zimmermann, T., A. J. Flikweert, T. Merdzhanova, J. Woerdenweber, A. Gordijn, K. Dybek, F. Stahr, and J. W. Bartha. "High-Rate Deposition of Intrinsic a-Si:H and μc-Si:H Layers for Thin‑Film Silicon Solar Cells using a Dynamic Deposition Process." MRS Proceedings 1426 (2012): 27–32. http://dx.doi.org/10.1557/opl.2012.833.

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ABSTRACTThin‑film silicon solar cells based on hydrogenated amorphous silicon (a‑Si:H) and hydrogenated microcrystalline silicon (μc‑Si:H) absorber layers are typically deposited using static plasma-enhanced chemical vapor deposition (PECVD) processes. It has been found that the use of very‑high frequencies (VHF) is beneficial for the material quality at high deposition rates when compared to radio-frequency (RF) processes. In the present work a dynamic VHF‑PECVD technique using linear plasma sources is developed. The linear plasma sources facilitate the use of very-high excitation frequencies on large electrode areas without compromising on the homogeneity of the deposition process. It is shown that state-of-the-art a‑Si:H and μc‑Si:H single-junction solar cells can be deposited incorporating intrinsic layers grown dynamically by VHF-PECVD at 0.35 nm/s and 0.95 nm/s, respectively.
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46

Goetz, M., P. Torres, P. Pernet, J. Meier, D. Fischer, H. Keppner, and A. Shah. "N-I-P Micromorph Solar Cells on Aluminium Substrates." MRS Proceedings 452 (1996). http://dx.doi.org/10.1557/proc-452-877.

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AbstractThe first successful deposition of ‘micromorph’ silicon tandem solar cells of the n-i-p-n-i-p configuration is reported. In order to implement the ‘micromorph’ solar cell concept, four key elements had to be prepared: First, the deposition of mid-gap, intrinsic microcrystalline silicon (μc-Si:H) by the 'gas purifier method', second, the amorphous silicon (a-Si:H) n-i-p single junction solar cell, third, the microcrystalline silicon n-i-p single junction solar cell and fourth, the ability of depositing on aluminium sheet substrates.All the solar cells presented have been deposited on flat aluminium sheets, using a single layer antireflection coating to couple the light into the cell. It is shown, that this antireflection concept- together with a flat substrate- holds for amorphous single junction solar cells, but it reaches its limit with the extended range of spectral response of the ‘micromorph’ cell.The best initial efficiencies for each category of n-i-p cells on flat substrates were: 8.7% for the amorphous silicon single junction cell, 4.9% for the microcrystalline silicon single junction cell and 9.25% for the ‘micromorph’ tandem cell.
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47

Yan, Baojie, Guozhen Yue, Jeffrey Yang, Arindam Banerjee, and Subhendu Guha. "Hydrogenated Microcrystalline Silicon Single-Junction and Multi-Junction Solar Cells." MRS Proceedings 762 (2003). http://dx.doi.org/10.1557/proc-762-a4.1.

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AbstractThis paper summarizes our recent studies of hydrogenated microcrystalline silicon (μc-Si:H) solar cells as a potential substitute for hydrogenated silicon germanium alloy (a-SiGe:H) bottom cells in multi-junction structures. Conventional radio frequency (RF) glow discharge is used to deposit hydrogenated amorphous silicon (a-Si:H) and μc-Si:H at low rates (∼ 1 Å/s), searching for the highest efficiency. We have achieved an initial active-area efficiency of 13.0% and stable efficiency of 11.2% using an a-Si:H/μc-Si:H double-junction structure. Modified very high frequency (MVHF) glow discharge is used to deposit a-Si:H and μc-Si:H at high rates (∼ 3-10 Å/s) for comparison with our a-Si:H/a-SiGe:H/a-SiGe:H triple-junction production technology. The deposition time for the μc-Si:H intrinsic (i) layer in the bottom cell should be less than 30 minutes in order to be acceptable for mass production. To date, an initial active-area efficiency of 12.3% has been achieved with the bottom cell deposited in 50 minutes. By increasing the deposition rate and reducing the bottom cell thickness, we have achieved an initial active-area efficiency of 11.4% with the bottom cellilayer deposited in 30 minutes. The cell stabilized to 10.4% after prolonged light soaking. We will address issues related to μc-Si:H material, solar cell design, solar cell analysis, and stability.
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48

Ferlauto, A. S., Joohyun Koh, P. I. Rovira, C. R. Wronski, and R. W. Collins. "Microcrystalline Silicon Tunnel Junctions for Amorphous Silicon-Based Multijunction Solar Cells." MRS Proceedings 557 (1999). http://dx.doi.org/10.1557/proc-557-579.

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AbstractThe formation of tunnel junctions for applications in amorphous silicon (a-Si:H) based multijunction n-i-p solar cells has been studied using real time optics. The junction structure investigated in detail here consists of a thin (~200 Å) layer of n-type microcrystalline silicon (μc-Si:H) on top of an equally thin layer of p-type μc-Si:H, the latter deposited on thick (~2000 Å) intrinsic a-Si:H. Such a structure has been optimized in an attempt to obtain single-phase μc-Si:H with a high crystallite packing density and large grain size for both layers of the tunnel junction. We have explored the conditions under which grain growth is continuous across the p/n junction and conditions under which renucleation of n-layer grains can be ensured at the junction. One important finding of this study is that the optimum conditions for single-phase, high-density μc-Si:H n-layers are different depending on whether the substrate is a μc-Si:H p-layer or is a H2-plasma treated or untreated a-Si:H i-layer. Thus, the top-most μc-Si:H layer of the tunnel junction must be optimized in the multijunction device configuration, rather than in single cell configurations on a-Si:H i-layers. Our observations are explained using an evolutionary phase diagram for a-Si:H and μc-Si:H film growth versus thickness and H2-dilution ratio, in which the boundary between the two phases is strongly substrate-dependent.
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49

J., Fatima Rasheed, and V. Suresh Babu. "Impact of Band-Gap Graded Intrinsic Layer on Single-Junction Band-Gap Tailored Solar Cells." Nanoscience & Nanotechnology-Asia 11 (September 8, 2021). http://dx.doi.org/10.2174/2210681211666210908141441.

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Objective: The work investigates the performance of intrinsic layers with and without band-gap tailoring in single-junction amorphous silicon-based photovoltaic cells. The work proposes single-junction amorphous silicon solar cells in which band-gap grading has been done between layers as well as within each layer for the first time. Materials & Methods: The samples of hydrogenated amorphous silicon-germanium with different mole fractions are fabricated, and their band-gaps are validated through optical characterization and material characterization. A single-junction solar cell with an intrinsic layer made up of hydrogenated amorphous silicon (aSi:H) having a band-gap of 1.6 eV is replaced by continuously graded hydrogenated amorphous silicon-germanium (aSi1-xGe x :H ) intrinsic bottom layers having band-gaps ranging from 0.9 eV to 1.5 eV. The proposed structure has been considered as a variant of previously designed single-junction band-gap tailored structures. Results: The suitable utilization of band-gap tailoring on the intrinsic absorber layer aids more incident photons in energy conversion and thereby attain a better short circuit current density of 19.89 mA/cm2. Conclusion: A comparative study on performance parameters of solar cell structures with graded band-gap intrinsic layer and the ungraded single band-gap intrinsic layer has been done. The graded band-gap intrinsic layer structure results in better conversion efficiency of 15.55%, while its ungraded counterpart contributes only 14.76 %. Further, the proposed solar structure is compared with the performance parameters of recent related works. The layers used in the proposed solar structure are of amorphous-phase only, which reduces structural complexity. The use of a lesser number of active layers reduces the number of fabrication steps and manufacturing cost compared to state-of-the-art.
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50

Terakawa, A., M. Shima, K. Sayama, H. Tarui, H. Nishiwaki, and S. Tsuda. "Hydrogenated Amorphous Silicon Germanium Alloy for Stable Solar Cells." MRS Proceedings 336 (1994). http://dx.doi.org/10.1557/proc-336-487.

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ABSTRACTThe film properties and solar cell performance of a-SiGe:H samples with the same optical gap and different combinations of hydrogen content (CH) and germanium content (CGe) have been compared. The optimum composition for the initial properties, such as the tail characteristic energy, defect density and conversion efficiency of the solar cell, was determined, and the differences could be explained by the difference in H bonding configuration. The degradation ratio of the conversion efficiency becomes larger in higher CH samples. This suggests that hydrogen or Si-H2 participates in light-induced degradation. As a result, the optimum CH for an efficient solar cell is believed to shift to the lower CH region after light soaking. Based on these findings, the stabilized conversion efficiency of 3.3% under red light (γ>650nm) for an a-SiGe:H single-junction solar cell (1cm2) and 10.6% under lsun light for an a-Si/a-SiGe double-junction stacked solar cell (1cm2) have been achieved. The degradation ratio is only 8.6% for the double-junction solar cell.
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