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Journal articles on the topic 'Silicon quantum dots'

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Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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1

Zwanenburg, F. A., A. A. van Loon, G. A. Steele, C. E. W. M. van Rijmenam, T. Balder, Y. Fang, C. M. Lieber, and L. P. Kouwenhoven. "Ultrasmall silicon quantum dots." Journal of Applied Physics 105, no. 12 (June 15, 2009): 124314. http://dx.doi.org/10.1063/1.3155854.

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2

Li, Q. S., R. Q. Zhang, S. T. Lee, T. A. Niehaus, and Th Frauenheim. "Amine-capped silicon quantum dots." Applied Physics Letters 92, no. 5 (February 4, 2008): 053107. http://dx.doi.org/10.1063/1.2841674.

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3

Lockwood, R., S. McFarlane, J. R. Rodríguez Núñez, X. Y. Wang, J. G. C. Veinot, and A. Meldrum. "Photoactivation of silicon quantum dots." Journal of Luminescence 131, no. 7 (July 2011): 1530–35. http://dx.doi.org/10.1016/j.jlumin.2011.02.006.

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4

Dohnalová, K., T. Gregorkiewicz, and K. Kůsová. "Silicon quantum dots: surface matters." Journal of Physics: Condensed Matter 26, no. 17 (April 8, 2014): 173201. http://dx.doi.org/10.1088/0953-8984/26/17/173201.

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5

Zhang, Zhixia, Chunjin Wei, Wenting Ma, Jun Li, Xincai Xiao, and Dan Zhao. "One-Step Hydrothermal Synthesis of Yellow and Green Emitting Silicon Quantum Dots with Synergistic Effect." Nanomaterials 9, no. 3 (March 20, 2019): 466. http://dx.doi.org/10.3390/nano9030466.

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The concept of synergistic effects has been widely applied in many scientific fields such as in biomedical science and material chemistry, and has further attracted interest in the fields of both synthesis and application of nanomaterials. In this paper, we report the synthesis of long-wavelength emitting silicon quantum dots based on a one-step hydrothermal route with catechol (CC) and sodium citrate (Na-citrate) as a reducing agent pair, and N-[3-(trimethoxysilyl)propyl]ethylenediamine (DAMO) as silicon source. By controlling the reaction time, yellow-emitting silicon quantum dots and green-emitting silicon quantum dots were synthesized with quantum yields (QYs) of 29.4% and 38.3% respectively. The as-prepared silicon quantum dots were characterized by fluorescence (PL) spectrum, UV–visible spectrum, high resolution transmission electron microscope (HRTEM), Fourier transform infrared (FT-IR) spectrometry energy dispersive spectroscopy (EDS), and Zeta potential. With the aid of these methods, this paper further discussed how the optical performance and surface characteristics of the prepared quantum dots (QDs) influence the fluorescence mechanism. Meanwhile, the cell toxicity of the silicon quantum dots was tested by the 3-(4,5-dimethylthiazolyl-2)-2,5-diphenyltetrazolium (MTT) bromide method, and its potential as a fluorescence ink explored. The silicon quantum dots exhibit a red-shift phenomenon in their fluorescence peak due to the participation of the carbonyl group during the synthesis. The high-efficiency and stable photoluminescence of the long-wavelength emitting silicon quantum dots prepared through a synergistic effect is of great value in their future application as novel optical materials in bioimaging, LED, and materials detection.

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6

Delgado, Alain, Marek Korkusinski, and Pawel Hawrylak. "Theory of atomic scale quantum dots in silicon: Dangling bond quantum dots on silicon surface." Solid State Communications 305 (January 2020): 113752. http://dx.doi.org/10.1016/j.ssc.2019.113752.

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7

Cho, Eun-Chel, Martin A. Green, Gavin Conibeer, Dengyuan Song, Young-Hyun Cho, Giuseppe Scardera, Shujuan Huang, et al. "Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells." Advances in OptoElectronics 2007 (August 28, 2007): 1–11. http://dx.doi.org/10.1155/2007/69578.

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We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.

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8

Park, Nae-Man, Chel-Jong Choi, Tae-Yeon Seong, and Seong-Ju Park. "Quantum Confinement in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride." Physical Review Letters 86, no. 7 (February 12, 2001): 1355–57. http://dx.doi.org/10.1103/physrevlett.86.1355.

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9

Sivasankarapillai, Vishnu Sankar, Jobin Jose, Muhammad Salman Shanavas, Akash Marathakam, Md Sahab Uddin, and Bijo Mathew. "Silicon Quantum Dots: Promising Theranostic Probes for the Future." Current Drug Targets 20, no. 12 (August 22, 2019): 1255–63. http://dx.doi.org/10.2174/1389450120666190405152315.

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Nanotechnology has emerged as one of the leading research areas involving nanoscale manipulation of atoms and molecules. During the past decade, the growth of nanotechnology has been one of the most important developments that have taken place in the biomedical field. The new generation nanomaterials like Quantum dots are gaining much importance. Also, there is a growing interest in the development of nano-theranostics platforms in medical diagnostics, biomedical imaging, drug delivery, etc. Quantum dots are also known as nanoscale semiconductor crystals, with unique electronic and optical properties. Recently, silicon quantum dots are being studied extensively due to their less-toxic, inert nature and ease of surface modification. The silicon quantum dots (2-10nm) are comparatively stable, having optical properties of silicon nanocrystals. This review focuses on silicon quantum dots and their various biomedical applications like drug delivery regenerative medicine and tissue engineering. Also, the processes involved in their modification for various biomedical applications along with future aspects are discussed.

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10

Qiu, Zheng Rong, and Hong Yu. "Optical Properties of Silicon Quantum Dots." Key Engineering Materials 483 (June 2011): 760–64. http://dx.doi.org/10.4028/www.scientific.net/kem.483.760.

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A first-principles study of the optical properties of silicon quantum dots (Si QDs) with different diameters is presented in this paper. Si QDs consisting of 10-220 Si atoms, the corresponding diameter ranges from 6-20 Å, with full termination of the Si interface with H are investigated in detail. The results show that both the band gap and the absorption spectrum of Si QDs are size-dependent. For Si QDs with diameter ranges from 6-20 Å, as the diameter decreases, the band gap increases, and a considerable blue-shift in the absorption spectrum is occurred. This unique property can be used to extend the absorption spectrum of the solar cell by mixing in QDs with different sizes. Therefore, the full spectrum of the sunlight may be utilized more efficiently.

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11

Li, Haiou, Xin Zhang, and Guoping Guo. "Controlling spins in silicon quantum dots." Journal of Semiconductors 41, no. 7 (July 2020): 070402. http://dx.doi.org/10.1088/1674-4926/41/7/070402.

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12

Oliva-Chatelain, Brittany L., Thomas M. Ticich, and Andrew R. Barron. "Doping silicon nanocrystals and quantum dots." Nanoscale 8, no. 4 (2016): 1733–45. http://dx.doi.org/10.1039/c5nr04978d.

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13

Talbo, V., J. Saint-Martin, Y. Apertet, S. Retailleau, and P. Dollfus. "Thermoelectric conversion in Silicon quantum-dots." Journal of Physics: Conference Series 395 (November 26, 2012): 012112. http://dx.doi.org/10.1088/1742-6596/395/1/012112.

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14

Betz, A. C., M. F. Gonzalez-Zalba, G. Podd, and A. J. Ferguson. "Ambipolar quantum dots in intrinsic silicon." Applied Physics Letters 105, no. 15 (October 13, 2014): 153113. http://dx.doi.org/10.1063/1.4898704.

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15

Hansen, L., F. Bensing, and A. Waag. "InAs quantum dots embedded in silicon." Thin Solid Films 367, no. 1-2 (May 2000): 85–88. http://dx.doi.org/10.1016/s0040-6090(00)00700-8.

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16

Huang, Wei-Qi, Shi-Rong Liu, Chao-Jian Qin, Quan Lü, and Li Xu. "Nano-laser on silicon quantum dots." Optics Communications 284, no. 7 (April 2011): 1992–96. http://dx.doi.org/10.1016/j.optcom.2010.12.022.

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17

Beke, David, Zsolt Szekrényes, Denes Pálfi, Gergely Róna, István Balogh, Pal Andor Maák, Gergely Katona, et al. "Silicon carbide quantum dots for bioimaging." Journal of Materials Research 28, no. 2 (September 28, 2012): 205–9. http://dx.doi.org/10.1557/jmr.2012.296.

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18

Wang, Lin-Wang, and Alex Zunger. "Dielectric Constants of Silicon Quantum Dots." Physical Review Letters 73, no. 7 (August 15, 1994): 1039–42. http://dx.doi.org/10.1103/physrevlett.73.1039.

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19

Alsmeier, J., E. Batke, and J. P. Kotthaus. "Voltage-tunable quantum dots on silicon." Physical Review B 41, no. 3 (January 15, 1990): 1699–702. http://dx.doi.org/10.1103/physrevb.41.1699.

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20

Bruhn, Benjamin, Jan Valenta, Fatemeh Sangghaleh, and Jan Linnros. "Blinking Statistics of Silicon Quantum Dots." Nano Letters 11, no. 12 (December 14, 2011): 5574–80. http://dx.doi.org/10.1021/nl203618h.

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21

Miličić, S. N., F. Badrieh, D. Vasileska, A. Gunther, and S. M. Goodnick. "3D modeling of silicon quantum dots." Superlattices and Microstructures 27, no. 5-6 (May 2000): 377–82. http://dx.doi.org/10.1006/spmi.2000.0845.

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22

Warner, Jamie H., Akiyoshi Hoshino, Kenji Yamamoto, and Richard D. Tilley. "Water-Soluble Photoluminescent Silicon Quantum Dots." Angewandte Chemie 117, no. 29 (July 18, 2005): 4626–30. http://dx.doi.org/10.1002/ange.200501256.

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23

Chinnathambi, Shanmugavel, Song Chen, Singaravelu Ganesan, and Nobutaka Hanagata. "Silicon Quantum Dots for Biological Applications." Advanced Healthcare Materials 3, no. 1 (August 15, 2013): 10–29. http://dx.doi.org/10.1002/adhm.201300157.

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24

Udipi, S., D. Vasileska, and D. K. Ferry. "Numerical modeling of silicon quantum dots." Superlattices and Microstructures 20, no. 3 (October 1996): 343–47. http://dx.doi.org/10.1006/spmi.1996.0087.

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25

Warner, Jamie H., Akiyoshi Hoshino, Kenji Yamamoto, and Richard D. Tilley. "Water-Soluble Photoluminescent Silicon Quantum Dots." Angewandte Chemie International Edition 44, no. 29 (July 18, 2005): 4550–54. http://dx.doi.org/10.1002/anie.200501256.

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26

Jia, Jinmei, Huan Liu, Jijie Zhao, Yuxuan Du, and Shuai Wen. "Si:HgTe Colloidal Quantum Dots Heterojunction-Based Infrared Photodiode." Journal of Nanomaterials 2023 (February 9, 2023): 1–9. http://dx.doi.org/10.1155/2023/4595819.

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Integrated circuits and optoelectronics are currently dominated by silicon technology. However, silicon’s response wavelength is typically less than 1,100 nm, limiting the application of silicon in machine vision, autonomous vehicles, and night vision. For infrared photodetectors, HgTe colloidal quantum dots (CQDs) are promising materials. Because of the adjustable bandgap, it responds over a wide spectral range. However, the construction of a high-quality junction between Si and HgTe CQDs continues to be difficult, thus restricting the scope of its application. In this article, we describe the synthesis, characterization, and correlation of HgTe CQDs with reaction temperature and nanocrystal size. We then fabricated HgTe-CQDs/silicon infrared photodiodes and discussed how the silicon resistivity affected their performance. We found that the devices prepared from 9.1 nm HgTe quantum dots synthesized at 80°C and a silicon substrate with a resistivity of 20–50 Ω·cm has optimal performance parameters. This results in a responsivity of 0.2 mA/W for 1,550 nm incident light at room temperature. These results provide a direction for future silicon-compatible HgTe quantum dot infrared optoelectronics.

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27

Reznik, R. R., K. P. Kotlyar, V. O. Gridchin, I. V. Ilkiv, A. I. Khrebtov, Yu B. Samsonenko, I. P. Soshnikov, et al. "III-V nanostructures with different dimensionality on silicon." Journal of Physics: Conference Series 2103, no. 1 (November 1, 2021): 012121. http://dx.doi.org/10.1088/1742-6596/2103/1/012121.

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Abstract The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider the given system promising for further integration of optical elements on silicon platform with fiber-optic systems. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.

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28

Wu, Jeslin J., and Uwe R. Kortshagen. "Photostability of thermally-hydrosilylated silicon quantum dots." RSC Advances 5, no. 126 (2015): 103822–28. http://dx.doi.org/10.1039/c5ra22827a.

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29

Kurokawa, Yasuyoshi, Shigeki Tomita, Shinsuke Miyajima, Akira Yamada, and Makoto Konagai. "Photoluminescence from Silicon Quantum Dots in Si Quantum Dots/Amorphous SiC Superlattice." Japanese Journal of Applied Physics 46, No. 35 (September 7, 2007): L833—L835. http://dx.doi.org/10.1143/jjap.46.l833.

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30

Liao, Bo, Wu Wang, Xiaoting Deng, Benqiao He, Wennan Zeng, Zilong Tang, and Qingquan Liu. "A facile one-step synthesis of fluorescent silicon quantum dots and their application for detecting Cu2+." RSC Advances 6, no. 18 (2016): 14465–67. http://dx.doi.org/10.1039/c5ra25563e.

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Fluorescent silicon quantum dots were synthesized by a facile one-step synthesis that involved etching silicon powder through a hydrothermal method. Without any surface modification, these silicon quantum dots could be used as a sensor to detect Cu²⁺.

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31

Pi, X. D., O. H. Y. Zalloum, A. P. Knights, P. Mascher, and P. J. Simpson. "Electrical conduction of silicon oxide containing silicon quantum dots." Journal of Physics: Condensed Matter 18, no. 43 (October 13, 2006): 9943–50. http://dx.doi.org/10.1088/0953-8984/18/43/016.

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32

Han, Li Hao, Jing Wang, and Ren Rong Liang. "Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications." Advanced Materials Research 383-390 (November 2011): 6270–76. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.6270.

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Quantum dots applied in solar cells will be of great importance to enhance the quantum tunneling efficiency and improve the photogenerated current transport. In this study, a new easy-to-operate technology was developed to fabricate germanium-silicon quantum dots in a SiOx matrix. The quantum dots were formed by first deposited germanium-rich SiO on quartz substrate using pulsed laser deposition technique and then annealed under a comparatively high temperature. We have demonstrated a stable and low-cost fabrication process which is much cheaper than the epitaxy method to provide for the fabrication of high density germanium-silicon quantum dots. Quantum dots with diameters of 3~4 nm embedded in the amorphous SiOx layer were clearly observed. The morphological features of the thin film were characterized. The optical properties were performed by Raman spectroscopy, photoluminescence spectrum and XRD test respectively to verify the crystallization of quantum dots in the SiOx matrix. Reflectance spectrum displayed a high light absorption rate in a spectra region from 300 nm to 1200 nm, evidencing that germanium-silicon quantum dots have promising features to be used as absorber for photovoltaic application.

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33

Kondo, Jun, Pial Mirdha, Barath Parthasarathy, Pik-Yiu Chan, Bander Saman, Faquir Jain, and Evan Heller. "Modeling and Fabrication of GeOx-Ge Cladded Quantum Dot Channel (QDC) FETs on Poly-Silicon." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840005. http://dx.doi.org/10.1142/s0129156418400050.

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Quantum dot channel (QDC) and Quantum dot gate (QDG) field effect transistors (FETs) have been fabricated on crystalline Si using cladded Si and Ge quantum dots. This paper presents fabrication and modeling of quantum dot channel field effect transistors (QDC-FETs) using cladded Ge quantum dots on poly-Si thin films grown on silicon-on-insulator (SOI) substrates. HfAlO2 high-k dielectric layers are used for the gate dielectric. QDC-FETs exhibit multi-state I-V characteristics which enable two-bit processing, and reduce FET count and power dissipation. QDC-FETs using germanium quantum dots provide higher electron mobility than conventional poly-silicon FETs, and mobility values comparable to conventional FETs using single crystalline silicon.

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34

Parthasarathy, Barath, Pial Mirdha, Jun Kondo, and Faquir Jain. "Dual Quantum Dot Superlattice." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840003. http://dx.doi.org/10.1142/s0129156418400037.

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In this paper, we propose a structure using four layers of quantum dots on crystalline silicon. The quantum dots site-specifically self-assembled in the p-type material due to the electrostatic attraction. This quantum dot super lattice (QDSL) structure will be constructed using a mixed layer of Germanium (Ge) and Silicon (Si) dots. Atomic Force Microscopy results will show the accurate stack height formed from individual and multi stacked layers. This is the first novel characterization of 4 layers of 2 separate self assemblies. This was also applied to a quantum dot gate field effect transistor (QDG-FET).

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35

MAHMOOD, Iram, Ishfaq AHMAD, Ishaq AHMAD, and Ting-kai ZHAO. "Photodegradation of Melamine Using Magnetic Silicon Quantum Dots." Materials Science 27, no. 2 (May 5, 2021): 127–32. http://dx.doi.org/10.5755/j02.ms.22688.

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Semiconductor Silicon quantum dots (SiQDs) and magnetic nanomaterials have been studied extensively for their variety of applications. We have presented a new method for the preparation of Magnetic Silicon Quantum Dots (Fe3O4/SiQDs) heterostructure nanocomposites. These nanocomposites are fluorescent, have excellent magnetic properties as well as high photocatalytic activity. Magnetic nanoparticles-semiconductor nanocomposites served as an effective recoverable photocatalyst for melamine degradation. In addition, due to their easy magnetic separation, these nanocomposites showed optimum catalytic activity for 15 cycles of usage.

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36

Cho, Bomin, Sangsoo Baek, Hee-Gweon Woo, and Honglae Sohn. "Synthesis of Silicon Quantum Dots Showing High Quantum Efficiency." Journal of Nanoscience and Nanotechnology 14, no. 8 (August 1, 2014): 5868–72. http://dx.doi.org/10.1166/jnn.2014.8297.

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37

Gemechu, N., T. Senbeta, B. Mesfin, and V. N. Mal'nev. "Thermoluminescence from Silicon Quantum Dots in the Two Traps-One Recombination Center Model." Ukrainian Journal of Physics 62, no. 2 (February 2017): 140–45. http://dx.doi.org/10.15407/ujpe62.02.0140.

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38

Pokutnyi, Sergey I., and Lucjan Jacak. "Intensity of Radiative Recombination in the Germanium/Silicon Nanosystem with Germanium Quantum Dots." Crystals 11, no. 3 (March 11, 2021): 275. http://dx.doi.org/10.3390/cryst11030275.

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It is shown that in a germanium/silicon nanosystem with germanium quantum dots, the hole leaving the germanium quantum dot causes the appearance of the hole energy level in the bandgap energy in a silicon matrix. The dependences of the energies of the ground state of a hole and an electron are obtained as well as spatially indirect excitons on the radius of the germanium quantum dot and on the depth of the potential well for holes in the germanium quantum dot. It is found that as a result of a direct electron transition in real space between the electron level that is located in the conduction band of the silicon matrix and the hole level located in the bandgap of the silicon matrix, the radiative recombination intensity in the germanium/silicon nanosystem with germanium quantum dots increases significantly.

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39

Anas, Muhammad Mus-’ab, and Geri Gopir. "Electronic and Optical Properties of Small Hydrogenated Silicon Quantum Dots Using Time-Dependent Density Functional Theory." Journal of Nanomaterials 2015 (2015): 1–9. http://dx.doi.org/10.1155/2015/481087.

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This paper presents a systematic study of the absorption spectrum of various sizes of small hydrogenated silicon quantum dots of quasi-spherical symmetry using the time-dependent density functional theory (TDDFT). In this study, real-time and real-space implementation of TDDFT involving full propagation of the time-dependent Kohn-Sham equations were used. The experimental results for SiH4and Si5H12showed good agreement with other earlier calculations and experimental data. Then these calculations were extended to study larger hydrogenated silicon quantum dots with diameter up to 1.6 nm. It was found that, for small quantum dots, the absorption spectrum is atomic-like while, for relatively larger (1.6 nm) structure, it shows bulk-like behavior with continuous plateau with noticeable peak. This paper also studied the absorption coefficient of silicon quantum dots as a function of their size. Precisely, the dependence of dot size on the absorption threshold is elucidated. It was found that the silicon quantum dots exhibit direct transition of electron from HOMO to LUMO states; hence this theoretical contribution can be very valuable in discerning the microscopic processes for the future realization of optoelectronic devices.

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40

Hao, X. J., E. C. Cho, G. Scardera, Y. S. Shen, E. Bellet-Amalric, D. Bellet, G. Conibeer, and M. A. Green. "Phosphorus-doped silicon quantum dots for all-silicon quantum dot tandem solar cells." Solar Energy Materials and Solar Cells 93, no. 9 (September 2009): 1524–30. http://dx.doi.org/10.1016/j.solmat.2009.04.002.

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41

Sousa de Almeida, Antonio, and Floris Arnoud Zwanenburg. "(Invited) Ambipolar Quantum Dots in Planar Silicon." ECS Meeting Abstracts MA2020-01, no. 22 (May 1, 2020): 1309. http://dx.doi.org/10.1149/ma2020-01221309mtgabs.

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42

Valenta, Jan, Robert Juhasz, and Jan Linnros. "Photoluminescence spectroscopy of single silicon quantum dots." Applied Physics Letters 80, no. 6 (February 11, 2002): 1070–72. http://dx.doi.org/10.1063/1.1448400.

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43

Li, Q. S., R. Q. Zhang, S. T. Lee, T. A. Niehaus, and Th Frauenheim. "Optimal surface functionalization of silicon quantum dots." Journal of Chemical Physics 128, no. 24 (June 28, 2008): 244714. http://dx.doi.org/10.1063/1.2940735.

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44

Adams, Sarah K., Nicholas W. Piekiel, Matthew H. Ervin, and Christopher J. Morris. "Silicon quantum dots for energetic material applications." Applied Physics Letters 112, no. 23 (June 4, 2018): 233108. http://dx.doi.org/10.1063/1.5022587.

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45

Morello, Andrea. "Silicon quantum dots: fine-tuning to maturity." Nanotechnology 26, no. 50 (November 20, 2015): 502501. http://dx.doi.org/10.1088/0957-4484/26/50/502501.

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46

Hada, Yoko, and Mikio Eto. "Exchange Coupling in Silicon Double Quantum Dots." Japanese Journal of Applied Physics 43, no. 10 (October 8, 2004): 7329–36. http://dx.doi.org/10.1143/jjap.43.7329.

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47

Dür, Manfred, Allen D. Gunther, Dragica Vasileska, and Stephen M. Goodnick. "Acoustic phonon scattering in silicon quantum dots." Nanotechnology 10, no. 2 (January 1, 1999): 142–46. http://dx.doi.org/10.1088/0957-4484/10/2/307.

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48

Angus, Susan J., Andrew J. Ferguson, Andrew S. Dzurak, and Robert G. Clark. "Gate-Defined Quantum Dots in Intrinsic Silicon." Nano Letters 7, no. 7 (July 2007): 2051–55. http://dx.doi.org/10.1021/nl070949k.

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49

Kryjevski, Andrei, Dmitri Kilin, and Svetlana Kilina. "Amorphous silicon nanomaterials: Quantum dots versus nanowires." Journal of Renewable and Sustainable Energy 5, no. 4 (July 2013): 043120. http://dx.doi.org/10.1063/1.4817728.

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50

Cheng, Xiaoyu, Benjamin F. P. McVey, Andrew B. Robinson, Guillaume Longatte, Peter B. O’Mara, Vincent T. G. Tan, Pall Thordarson, Richard D. Tilley, Katharina Gaus, and John Justin Gooding. "Protease sensing using nontoxic silicon quantum dots." Journal of Biomedical Optics 22, no. 08 (August 23, 2017): 1. http://dx.doi.org/10.1117/1.jbo.22.8.087002.

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