Relevant bibliographies by topics / Silicon quantum dots

Academic literature on the topic 'Silicon quantum dots'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 September 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Contents

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Silicon quantum dots.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Silicon quantum dots"

1

Zwanenburg, F. A., A. A. van Loon, G. A. Steele, C. E. W. M. van Rijmenam, T. Balder, Y. Fang, C. M. Lieber, and L. P. Kouwenhoven. "Ultrasmall silicon quantum dots." Journal of Applied Physics 105, no. 12 (June 15, 2009): 124314. http://dx.doi.org/10.1063/1.3155854.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Li, Q. S., R. Q. Zhang, S. T. Lee, T. A. Niehaus, and Th Frauenheim. "Amine-capped silicon quantum dots." Applied Physics Letters 92, no. 5 (February 4, 2008): 053107. http://dx.doi.org/10.1063/1.2841674.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Lockwood, R., S. McFarlane, J. R. Rodríguez Núñez, X. Y. Wang, J. G. C. Veinot, and A. Meldrum. "Photoactivation of silicon quantum dots." Journal of Luminescence 131, no. 7 (July 2011): 1530–35. http://dx.doi.org/10.1016/j.jlumin.2011.02.006.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Dohnalová, K., T. Gregorkiewicz, and K. Kůsová. "Silicon quantum dots: surface matters." Journal of Physics: Condensed Matter 26, no. 17 (April 8, 2014): 173201. http://dx.doi.org/10.1088/0953-8984/26/17/173201.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Zhang, Zhixia, Chunjin Wei, Wenting Ma, Jun Li, Xincai Xiao, and Dan Zhao. "One-Step Hydrothermal Synthesis of Yellow and Green Emitting Silicon Quantum Dots with Synergistic Effect." Nanomaterials 9, no. 3 (March 20, 2019): 466. http://dx.doi.org/10.3390/nano9030466.

Full text
Abstract:
The concept of synergistic effects has been widely applied in many scientific fields such as in biomedical science and material chemistry, and has further attracted interest in the fields of both synthesis and application of nanomaterials. In this paper, we report the synthesis of long-wavelength emitting silicon quantum dots based on a one-step hydrothermal route with catechol (CC) and sodium citrate (Na-citrate) as a reducing agent pair, and N-[3-(trimethoxysilyl)propyl]ethylenediamine (DAMO) as silicon source. By controlling the reaction time, yellow-emitting silicon quantum dots and green-emitting silicon quantum dots were synthesized with quantum yields (QYs) of 29.4% and 38.3% respectively. The as-prepared silicon quantum dots were characterized by fluorescence (PL) spectrum, UV–visible spectrum, high resolution transmission electron microscope (HRTEM), Fourier transform infrared (FT-IR) spectrometry energy dispersive spectroscopy (EDS), and Zeta potential. With the aid of these methods, this paper further discussed how the optical performance and surface characteristics of the prepared quantum dots (QDs) influence the fluorescence mechanism. Meanwhile, the cell toxicity of the silicon quantum dots was tested by the 3-(4,5-dimethylthiazolyl-2)-2,5-diphenyltetrazolium (MTT) bromide method, and its potential as a fluorescence ink explored. The silicon quantum dots exhibit a red-shift phenomenon in their fluorescence peak due to the participation of the carbonyl group during the synthesis. The high-efficiency and stable photoluminescence of the long-wavelength emitting silicon quantum dots prepared through a synergistic effect is of great value in their future application as novel optical materials in bioimaging, LED, and materials detection.
APA, Harvard, Vancouver, ISO, and other styles
6

Delgado, Alain, Marek Korkusinski, and Pawel Hawrylak. "Theory of atomic scale quantum dots in silicon: Dangling bond quantum dots on silicon surface." Solid State Communications 305 (January 2020): 113752. http://dx.doi.org/10.1016/j.ssc.2019.113752.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Cho, Eun-Chel, Martin A. Green, Gavin Conibeer, Dengyuan Song, Young-Hyun Cho, Giuseppe Scardera, Shujuan Huang, et al. "Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells." Advances in OptoElectronics 2007 (August 28, 2007): 1–11. http://dx.doi.org/10.1155/2007/69578.

Full text
Abstract:
We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.
APA, Harvard, Vancouver, ISO, and other styles
8

Park, Nae-Man, Chel-Jong Choi, Tae-Yeon Seong, and Seong-Ju Park. "Quantum Confinement in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride." Physical Review Letters 86, no. 7 (February 12, 2001): 1355–57. http://dx.doi.org/10.1103/physrevlett.86.1355.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Sivasankarapillai, Vishnu Sankar, Jobin Jose, Muhammad Salman Shanavas, Akash Marathakam, Md Sahab Uddin, and Bijo Mathew. "Silicon Quantum Dots: Promising Theranostic Probes for the Future." Current Drug Targets 20, no. 12 (August 22, 2019): 1255–63. http://dx.doi.org/10.2174/1389450120666190405152315.

Full text
Abstract:
Nanotechnology has emerged as one of the leading research areas involving nanoscale manipulation of atoms and molecules. During the past decade, the growth of nanotechnology has been one of the most important developments that have taken place in the biomedical field. The new generation nanomaterials like Quantum dots are gaining much importance. Also, there is a growing interest in the development of nano-theranostics platforms in medical diagnostics, biomedical imaging, drug delivery, etc. Quantum dots are also known as nanoscale semiconductor crystals, with unique electronic and optical properties. Recently, silicon quantum dots are being studied extensively due to their less-toxic, inert nature and ease of surface modification. The silicon quantum dots (2-10nm) are comparatively stable, having optical properties of silicon nanocrystals. This review focuses on silicon quantum dots and their various biomedical applications like drug delivery regenerative medicine and tissue engineering. Also, the processes involved in their modification for various biomedical applications along with future aspects are discussed.
APA, Harvard, Vancouver, ISO, and other styles
10

Qiu, Zheng Rong, and Hong Yu. "Optical Properties of Silicon Quantum Dots." Key Engineering Materials 483 (June 2011): 760–64. http://dx.doi.org/10.4028/www.scientific.net/kem.483.760.

Full text
Abstract:
A first-principles study of the optical properties of silicon quantum dots (Si QDs) with different diameters is presented in this paper. Si QDs consisting of 10-220 Si atoms, the corresponding diameter ranges from 6-20 Å, with full termination of the Si interface with H are investigated in detail. The results show that both the band gap and the absorption spectrum of Si QDs are size-dependent. For Si QDs with diameter ranges from 6-20 Å, as the diameter decreases, the band gap increases, and a considerable blue-shift in the absorption spectrum is occurred. This unique property can be used to extend the absorption spectrum of the solar cell by mixing in QDs with different sizes. Therefore, the full spectrum of the sunlight may be utilized more efficiently.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Silicon quantum dots"

1

Rostron, Rebecca Joy. "Optical properties of luminescent alkylated-silicon quantum dots." Thesis, University of Newcastle Upon Tyne, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.556004.

Full text
Abstract:
Under excitation by visible light, alkylated-silicon quantum dots emit an orange- coloured luminescence, peaking at around 650 nm. Following continuous illumination, a decay of the luminescence over a time-scale of 5-10 minutes was monitored concur- rently with a photo current generated by ejection of electrons from the dots. The photoluminescence and current both decayed to non-zero, steady-state values during irradiation by visible laser light at incident intensities in the range 0.25-0.3 ± 0.01 kW /cm2; on cessation, the non-conducting photoluminescent state was substantially regained. These observations are consistent with a model in which the decay is as- cribed to autoionization of the alkylated-silicon quantum dots with a mean lifetime {Ta), depending on particle size, and recovery of luminescence to electron-hole re- combination characterized by a mean lifetime {Teh). Values of {Ta) = 1.08 ± 0.03 sand {Teh) = 770 ± 300 s were extracted from nonlinear least squares fitting to the time dependence of the photoluminescence intensity. The temporal behaviour of the transient photocurrent was found to be quantitatively consistent with a one- dimensional model of diffusion of charge carriers between quantum dots. Integration of the time-dependence of the photo current response coupled with an estimate of the volume irradiated by the laser light suggests ionization of one electron per quantum dot during photon irradiation. Measurements of the time-resolved decay of orange-band emission over a time scale of tens of microseconds and of the dependence on applied intensity of luminescence from the quantum dots were performed using pulsed laser sources. The dependence of luminescence on time was found to be strongly non-exponential and was optimally ac- counted for by a probability density function which describes a continuous distribution of two decay times: the temporal behaviour is characteristic of a pair of elementary steps connected with light emission within a distribution of local environments, or a single rate process supported by two environments. Non-linear least-squares fits to the time dependent luminescence formulated on this basis with a Gaussian, Lorentzian or log-normal distribution of rates returned most probable lifetimes T1 = 21 ± 1 μS and T2 = 3.7 ± 0.8 μS. The widths of the distributions vary between σ1 = 0.01-D.03μs-1 and az = 0.14-1.1 μs-1 associated with 1/T1 and 1/T2 respectively. The intensity of luminescence displays a linear power dependence on the intensity of the applied field, from which an exponent n = 0.94±0.02 commensurate with single-photon absorption was derived.
APA, Harvard, Vancouver, ISO, and other styles
2

Sangghaleh, Fatemeh. "Carrier Dynamics in Single Luminescent Silicon Quantum Dots." Doctoral thesis, KTH, Materialfysik, MF, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-174149.

Full text
Abstract:
Bulk silicon as an indirect bandgap semiconductor is a poor light emitter. In contrast, silicon nanocrystals (Si NCs) exhibit strong emission even at room temperature, discovered initially at 1990 for porous silicon by Leigh Canham. This can be explained by the indirect to quasi-direct bandgap modification of nano-sized silicon according to the already well-established model of quantum confinement. In the absence of deep understanding of numerous fundamental optical properties of Si NCs, it is essential to study their photoluminescence (PL) characteristics at the single-dot level. This thesis presents new experimental results on various photoluminescence mechanisms in single silicon quantum dots (Si QDs). The visible and near infrared emission of Si NCs are believed to originate from the band-to-band recombination of quantum confined excitons. However, the mechanism of such process is not well understood yet. Through time-resolved PL decay spectroscopy of well-separated single Si QDs, we first quantitatively established that the PL decay character varies from dot-to-dot and the individual lifetime dispersion results in the stretched exponential decays of ensembles. We then explained the possible origin of such variations by studying radiative and non-radiative decay channels in single Si QDs. For this aim the temperature dependence of the PL decay were studied. We further demonstrated a model based on resonance tunneling of the excited carriers to adjacent trap sites in single Si QDs which explains the well-known thermal quenching effect. Despite the long PL lifetime of Si NCs, which limits them for optoelectronics applications, they are ideal candidates for biomedical imaging, diagnostic purposes, and phosphorescence applications, due to the non-toxicity, biocompability and material abundance of silicon. Therefore, measuring quantum efficiency of Si NCs is of great importance, while a consistency in the reported values is still missing. By direct measurements of the optical absorption cross-section for single Si QDs, we estimated a more precise value of internal quantum efficiency (IQE) for single dots in the current study. Moreover, we verified IQE of ligand-passivated Si NCs to be close to 100%, due to the results obtained from spectrally-resolved PL decay studies. Thus, ligand-passivated silicon nanocrystals appear to differ substantially from oxide-encapsulated particles, where any value from 0 % to 100 % could be measured. Therefore, further investigation on passivation parameters is strongly suggested to optimize the efficiency of silicon nanocrystals systems.

QC 201501001

APA, Harvard, Vancouver, ISO, and other styles
3

Lie, Lars Henning. "DNA field effect transistors and silicon quantum dots." Thesis, University of Newcastle Upon Tyne, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.417547.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Juhasz, Robert. "Silicon nanowires, nanopillars and quantum dots : Fabrication and characterization." Doctoral thesis, Stockholm : Solid state elechtronics, Laboratory of materials and semiconductor physics, School of information and communication technology, Royal institute of technology (KTH), 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-420.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Sychugov, Ilya. "Synthesis and properties of single luminescent silicon quantum dots." Doctoral thesis, Kista : Department of Microelectronics and Applied Physics, School of Information and Communication Technology, Royal Institute of Technology, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4254.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Chatterjee, A. "Silicon nanodevice qubits based on quantum dots and dopants." Thesis, University College London (University of London), 2017. http://discovery.ucl.ac.uk/1554752/.

Full text
Abstract:
Quantum physics applied to computing is predicted to lead to revolutionary enhancements in computational speed and power. The interest in the implementation of an impurity spin based qubit in silicon for quantum computation is motivated by exceedingly long coherence times of the order of seconds, an advantage of silicon's low spin orbit coupling and its ability to be isotopically enriched to the nuclear spin zero form. In addition, the donor spin in silicon is tunable, its nuclear spin is available to be employed as a quantum memory, and there are major advantages to working with silicon in terms of infrastructure and scalability. In contrast, lithographically patterned artificial atoms called quantum dots have the complementary advantages of fast electrical operations and tunability. Here I present our attempts to develop a scalable quantum computation architecture in silicon, based on a coupled quantum dot and dopant system. I explore industry-compatible as well as industrial foundry-fabricated devices in silicon as hosts for few-electron quantum dots and utilise a high-sensitivity readout and charge sensing technique, gate-based radiofrequency reflectometry, for this purpose. I show few-electron quantum dot measurements in this device architecture, leading to a charge qubit with a novel multi-regime Landau-Zener interferometry signature, with possible applications for readout sensitivity. I also present spin-to-charge conversion measurements of a chalcogen donor atom in silicon. Lastly, I perform measurements on a foundry-fabricated silicon device showing a coupling between a donor atom and a quantum dot. I probe the relevant charge dynamics of the charge qubit, as well as observe Pauli spin blockade in the hybrid spin system, opening up the possibility to operate this coupled double quantum dot as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.
APA, Harvard, Vancouver, ISO, and other styles
7

Perez, Barraza Julia Isabel. "Ultrasmall silicon quantum dots for the realization of a spin qubit." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708003.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Corna, Andrea. "Single spin control and readout in silicon coupled quantum dots." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY003/document.

Full text
Abstract:
Au cours des dernières années le silicium est apparu comme un matériau hôte prometteur pour les qubits de spin. Grâce à la microélectronique moderne, la technologie du silicium a connu un formidable développement. Réaliser des qubits utilisant la technologie bien établie de fabrication CMOS de semi-conducteurs favoriserait clairement leur intégration à grande échelle.Dans cette thèse nous présentons les travaux effectués dans une perspective des qubits CMOS. En particulier, nous avons abordé les problèmes de confinement des charges et des spins dans les boîtes quantiques, la manipulation des spins et la lecture des charges et des spins.Nous avons exploré les différentes propriétés de confinement de charge et de spin dans des échantillons de tailles et de géométries différentes. Les MOSFETs de taille extrêmement réduites montrent du blocage de Coulomb jusqu'à température ambiante, avec des énergies de charges jusqu'à 200meV. Les dispositifs multi-grilles avec des dimensions géométriques plus grandes ont été utilisés pour confiner les spins et lire leur état par blocage de spin, en réalisant ainsi une conversion spin / charge.La manipulation des spins est réalisée au moyen d'un dipôle électronique induisant la résonance de spin (EDSR). Les deux plus basses vallées de la bande de conduction du silicium sont visibles sous forme de transitions de spin intra et inter-vallées. Nous observons une levée de dégénérescence de vallée d'amplitude 36μeV. La résonance de spin que l'on observe résulte de la géométrie spécifique de l'échantillon, de la physique des vallées et de l'interaction spin-orbite de type Rashba. Des signatures de manipulation cohérente, sous forme d'oscillations de Rabi, ont été mesurées, avec une fréquence de Rabi de 6MHz. Nous discutons également de la lecture rapide des charges et des spins effectuée par réflectométrie dispersive couplée à la grille. Nous montrons comment l'utiliser pour reconstruire le diagramme de stabilité de charge du dispositif et le signal attendu pour un système à double boîte isolé. La tension de polarisation finie modifie la réponse du système et nous l'avons utilisée pour sonder les états excités et leur dynamique
In the recent years, silicon has emerged as a promising host material for spin qubits. Thanks to its widespread use in modern microelectronics, silicon technology has seen a tremendous development. Realizing qubit devices using well-established complementary metal-oxide-semiconductor (CMOS) fabrication technology would clearly favor their large scale integration.In this thesis we present a detailed study on CMOS devices in a perspective of qubit operability.In particular we tackled the problems of charge and spin confinement in quantum dots, spin manipulation and charge and spin readout.We explored the different charge and spin confinement capabilities of samples with different sizes and geometries. Ultrascaled MOSFETs show Coulomb blockade up to room temperature with charging energies up to 200meV. Multigate devices with larger geometrical dimensions have been used to confine spins and read their states through spin-blockade as a way to perform spin to charge conversion.Spin manipulation is achieved by means of Electron Dipole induced Spin Resonance (EDSR). The two lowest valleys of silicon's conduction band originate as intra and inter-valley spin transitions; we probe a valley splitting of 36μeV. The origin of this spin resonance is explained as an effect of the specific geometry of the sample combined with valley physics and Rashba spin-orbit interaction. Signatures of coherent Rabi oscillations have been measured, with a Rabi frequency of 6MHz. We also discuss fast charge and spin readout performed by dispersive gate-coupled reflectometry. We show how to use it to recover the complete charge stability diagram of the device and the expected signal for an isolated double dot system. Finite bias changes the response of the system and we used it to probe excited states and their dynamics
APA, Harvard, Vancouver, ISO, and other styles
9

Cho, Young Hyun Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "Silicon quantum dot superlattices in dielectric matrices: SiO2, Si3N4 and SiC." Awarded by:University of New South Wales, 2007. http://handle.unsw.edu.au/1959.4/40172.

Full text
Abstract:
Silicon quantum dots (QDs) in SiO2 superlattices were fabricated by alternate deposition of silicon oxide (SiO2) and silicon-rich oxide (SRO), i.e. SiOx (x<2), and followed by high temperature annealing. A deposited SRO film is thermodynamically unstable below 1173oC and phase separation and diffusion of Si atoms in the amorphous SiO2 matrix creates nano-scaled Si quantum dots. The quantum-confined energy gap was measured by static photoluminescence (PL) using an Argon ion laser operating at 514.5 nm. The measured energy band gaps of crystalline Si QDs in SiO2 matrix at room temperature (300 K) show that the emission energies from 1.32 eV to 1.65 eV originating Si dot sizes from 6.0 nm to 3.4 nm, respectively. There is a strong blue-shift of the PL energy peak position with decreasing the quantum dot size and this shows the evidence of quantum confinement of our fabricated Si QDs in SiO2 matrix. The PL results indicate that the fabricated Si QDs in SiO2 matrix could be suitable for the device application such as top cell material for all-silicon tandem solar cells. Silicon QD superlattices in nitride matrix were fabricated by alternate deposition of silicon nitride (Si3N4) and silicon-rich nitride (SRN) by PECVD or co-sputtering of Si and Si3N4 targets. High temperature furnace annealing under a nitrogen atmosphere was required to form nano-scaled silicon quantum dots in the nitride matrix. The band gap of silicon QD superlattice in nitride matrix (3.6- 7.0 nm sized dots) is observed in the energy range of 1.35- 1.98 eV. It is about 0.3- 0.4 eV blue-shifted from the band gap of the same sized quantum dots in silicon oxide. It is believed that the increased band gap is caused by a silicon nitride passivation effect. Silicon-rich carbide (SRC, i.e. Si1-xCx) thin films with varying atomic ratio of the Si to C were fabricated by using magnetron co-sputtering from a combined Si and C or SiC targets. Off-stoichiometric Si1-xCx is of interest as a precursor to realize Si QDs in SiC matrix, because it is thermodynamically metastable when the composition fraction is in the range 0 < x < 0.5. Si nanocrystals are therefore able to precipitate during a post-annealing process. SiC quantum dot superlattices in SiC matrix were fabricated by alternate deposition of thin layers of carbon-rich silicon carbide (CRC) and SRC using a layer by layer deposition technique. CRC layers were deposited by reactive co-sputtering of Si and SiC targets with CH4. The PL energy band gap (2.0 eV at 620 nm) from 5.0 nm SRC layers could be from the nanocrystalline ??-SiC with Si-O bonds and the PL energy band gap (1.86 eV at 665 nm) from 6.0 nm SRC layers could be from the nanocrystalline ??-SiC with amorphous SiC clusters, respectively. The dielectric material for an all-silicon tandem cell is preferably silicon oxide, silicon nitride or silicon carbide. It is found that for carrier mobility, dot spacing for a given Bloch mobility is in the order: SiC > Si3N4 > SiO2. By ab-initio simulation and PL results, the band gap for a given dot size is in the order: SiC > Si3N4 > SiO2. However, the PL intensity for a given dot size is in the order: SiC < Si3N4 < SiO2.
APA, Harvard, Vancouver, ISO, and other styles
10

Sridhara, Karthik Ruzllyo Jerzy. "Characterization of MOS capacitor gate oxide embedded with silicon quantum dots." [University Park, Pa.] : Pennsylvania State University, 2009. http://etda.libraries.psu.edu/theses/approved/PSUonlyIndex/ETD-4079/index.html.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "Silicon quantum dots"

1

W, Koch S., ed. Semiconductor quantum dots. Singapore: World Scientific, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Sattler, Klaus D. Silicon Nanomaterials Sourcebook: Low-Dimensional Structures, Quantum Dots, and Nanowires, Volume One. Taylor & Francis Group, 2017.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Sattler, Klaus D. Silicon Nanomaterials Sourcebook: Low-Dimensional Structures, Quantum Dots, and Nanowires, Volume One. Taylor & Francis Group, 2019.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Sattler, Klaus D. Silicon Nanomaterials Sourcebook: Low-Dimensional Structures, Quantum Dots, and Nanowires, Volume One. Taylor & Francis Group, 2017.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

Sattler, Klaus D. Silicon Nanomaterials Sourcebook: Low-Dimensional Structures, Quantum Dots, and Nanowires, Volume One. Taylor & Francis Group, 2017.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Sattler, Klaus D. Silicon Nanomaterials Sourcebook: Low-Dimensional Structures, Quantum Dots, and Nanowires, Volume One. Taylor & Francis Group, 2017.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

Sattler, Klaus D. Silicon Nanomaterials Sourcebook: Low-Dimensional Structures, Quantum Dots, and Nanowires, Volume One. Taylor & Francis Group, 2017.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

Narlikar, A. V., and Y. Y. Fu, eds. Oxford Handbook of Nanoscience and Technology. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.001.0001.

Full text
Abstract:
This volume highlights engineering and related developments in the field of nanoscience and technology, with a focus on frontal application areas like silicon nanotechnologies, spintronics, quantum dots, carbon nanotubes, and protein-based devices as well as various biomolecular, clinical and medical applications. Topics include: the role of computational sciences in Si nanotechnologies and devices; few-electron quantum-dot spintronics; spintronics with metallic nanowires; Si/SiGe heterostructures in nanoelectronics; nanoionics and its device applications; and molecular electronics based on self-assembled monolayers. The volume also explores the self-assembly strategy of nanomanufacturing of hybrid devices; templated carbon nanotubes and the use of their cavities for nanomaterial synthesis; nanocatalysis; bifunctional nanomaterials for the imaging and treatment of cancer; protein-based nanodevices; bioconjugated quantum dots for tumor molecular imaging and profiling; modulation design of plasmonics for diagnostic and drug screening; theory of hydrogen storage in nanoscale materials; nanolithography using molecular films and processing; and laser applications in nanotechnology. The volume concludes with an analysis of the various risks that arise when using nanomaterials.
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Silicon quantum dots"

1

Zhang, Rui-Qin, and Yanoar Pribadi Sarwono. "Hydrogen-terminated silicon quantum dots." In Silicon Nanomaterials Sourcebook, 413–32. Boca Raton, FL: CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153544-20.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Valenta, Jan, Jan Linnros, Robert Juhasz, Frank Cichos, and JÖrg Martin. "Optical Spectroscopy Of Single Quantum Dots." In Towards the First Silicon Laser, 89–108. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0149-6_10.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Zhao, Shuangyi, and Xiaodong Pi. "Colloidal Silicon Quantum Dots and Solar Cells." In Handbook of Photovoltaic Silicon, 1–27. Berlin, Heidelberg: Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-52735-1_36-1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Zhao, Shuangyi, and Xiaodong Pi. "Colloidal Silicon Quantum Dots and Solar Cells." In Handbook of Photovoltaic Silicon, 933–58. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-56472-1_36.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Romano, Francesco, Yixuan Yu, Brian A. Korgel, Giacomo Bergamini, and Paola Ceroni. "Light-Harvesting Antennae Based on Silicon Nanocrystals." In Photoactive Semiconductor Nanocrystal Quantum Dots, 89–106. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-51192-4_4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Sanguinetti, Stefano, Sergio Bietti, and Giovanni Isella. "Integration of Strain Free III–V Quantum Dots on Silicon." In Silicon-based Nanomaterials, 327–56. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8169-0_13.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Stan, Miruna Silvia, Cornelia Sima, and Anca Dinischiotu. "Silicon Quantum Dots: From Synthesis to Bioapplications." In Bioactivity of Engineered Nanoparticles, 339–59. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-5864-6_13.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Rashid, Marzaini, Ben R. Horrocks, Noel Healy, Jonathan P. Goss, Hua-Khee Chan, and AltonB Horsfall. "Surface Functionalization of Silicon Carbide Quantum Dots." In Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing, 181–99. Boca Raton : Taylor & Francis, a CRC title, part of the Taylor &: CRC Press, 2018. http://dx.doi.org/10.1201/9780429503634-8.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Thean, A., and J. P. Leburton. "Strain Effect in Large Silicon Nanocrystal Quantum Dots." In Physical Models for Quantum Dots, 835–42. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003148494-53.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

de Sousa, J. S., J. P. Leburton, V. N. Freire, and E. F. da Silva. "Intraband Absorption and Stark Effect in Silicon Nanocrystals." In Physical Models for Quantum Dots, 885–906. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003148494-57.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Silicon quantum dots"

1

Kunji Chen, San Chen, Bo Qian, Xiangao Zhang, Wei Li, Jun Xu, and Xinfan Huang. "Silicon based photonic quantum dots." In 2008 5th IEEE International Conference on Group IV Photonics. IEEE, 2008. http://dx.doi.org/10.1109/group4.2008.4638111.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Mangolini, Lorenzo, Elijah Thimsen, and Uwe Kortshagen. "High-Yield Plasma Synthesis of Luminescent Silicon Quantum Dots." In ASME 4th Integrated Nanosystems Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/nano2005-87067.

Full text
Abstract:
Crystalline silicon quantum dots are of interest for a variety of applications from solid state lighting, to optoelectronic devices, to use as fluorescent tagging agents. Compared to other quantum dot materials, silicon’s appeal lies in its low toxicity and environmental hazard, and its compatibility with silicon technology used for microelectronics.
APA, Harvard, Vancouver, ISO, and other styles
3

Henderson, Don O., Marvin H. Wu, Richard Mu, Akira Ueda, C. W. White, and A. Meldrum. "Relaxation dynamics of silicon quantum dots in silica." In Lasers and Materials in Industry and Opto-Contact Workshop, edited by Emile J. Knystautas. SPIE, 1998. http://dx.doi.org/10.1117/12.321961.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Lee, Howard W. H., Peter A. Thielen, Gildardo R. Delgado, Susan M. Kauzlarich, Chung-Sung Yang, and Boyd R. Taylor. "Light emission from silicon quantum dots." In Critical Review Collection. SPIE, 2000. http://dx.doi.org/10.1117/12.419800.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Yang, Tsung-Yeh, Samaresh Das, Thierry Ferrus, Aleksey Andreev, and David A. Williams. "Charge sensing of two isolated double quantum dots." In 2014 Silicon Nanoelectronics Workshop (SNW). IEEE, 2014. http://dx.doi.org/10.1109/snw.2014.7348580.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Eriksson, Mark A. "Spin-dependent transport in silicon/silicon-germanium quantum dots." In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418452.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Ferrus, T., A. Rossi, T. Kodera, T. Kambara, W. Lin, S. Oda, and D. A. Williams. "Microwave manipulation of electrons in silicon quantum dots." In 2012 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2012. http://dx.doi.org/10.1109/snw.2012.6243289.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Jeon, Woong Bae, Jong Sung Moon, Kyu-Young Kim, Young-Ho Ko, Christopher J. K. Richardson, Edo Waks, and Je-Hyung Kim. "Plug-and-Play Quantum Light Sources with Efficient Fiber-Interfacing Quantum Dots." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/iprsn.2022.iw2b.2.

Full text
Abstract:
We demonstrate efficient fiber-interfacing photonic devices based on hole gratings producing a narrow directional beam that directly launch single photons from quantum dots into a standard single-mode fiber by matching the numerical aperture.
APA, Harvard, Vancouver, ISO, and other styles
9

Valentin, A., J. See, S. Galdin-Retailleau, and P. Dollfus. "Electron/phonon interaction in silicon quantum dots." In 2008 9th International Conference on Ultimate Integration on Silicon (ULIS). IEEE, 2008. http://dx.doi.org/10.1109/ulis.2008.4527140.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Kodera, T., G. Yamahata, T. Kambara, K. Horibe, K. Uchida, C. M. Marcus, and S. Oda. "Spin-related tunneling in lithographically-defined silicon quantum dots." In 2010 Silicon Nanoelectronics Workshop (SNW). IEEE, 2010. http://dx.doi.org/10.1109/snw.2010.5562576.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Silicon quantum dots"

1

Krishnamurthy, Mohan. Assembly of Ge Quantum-Dots on Silicon: Applications to Nanoelectronics. Fort Belvoir, VA: Defense Technical Information Center, November 2000. http://dx.doi.org/10.21236/ada386720.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Ward, Daniel Robert. Option 1: Qubits in Gate-Defined Silicon Quantum Dots UW/Delft/Harvard/SNL Collaboration. Office of Scientific and Technical Information (OSTI), January 2020. http://dx.doi.org/10.2172/1596528.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Silicon quantum dots' for particular source types:
Journal articles Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography