Journal articles on the topic 'Silicon photonics'
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Li, Chenlei, Dajian Liu, and Daoxin Dai. "Multimode silicon photonics." Nanophotonics 8, no. 2 (November 23, 2018): 227–47. http://dx.doi.org/10.1515/nanoph-2018-0161.
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AbstractMultimode silicon photonics is attracting more and more attention because the introduction of higher-order modes makes it possible to increase the channel number for data transmission in mode-division-multiplexed (MDM) systems as well as improve the flexibility of device designs. On the other hand, the design of multimode silicon photonic devices becomes very different compared with the traditional case with the fundamental mode only. Since not only the fundamental mode but also the higher-order modes are involved, one of the most important things for multimode silicon photonics is the realization of effective mode manipulation, which is not difficult, fortunately because the mode dispersion in multimode silicon optical waveguide is very strong. Great progresses have been achieved on multimode silicon photonics in the past years. In this paper, a review of the recent progresses of the representative multimode silicon photonic devices and circuits is given. The first part reviews multimode silicon photonics for MDM systems, including on-chip multichannel mode (de)multiplexers, multimode waveguide bends, multimode waveguide crossings, reconfigurable multimode silicon photonic integrated circuits, multimode chip-fiber couplers, etc. In the second part, we give a discussion about the higher-order mode-assisted silicon photonic devices, including on-chip polarization-handling devices with higher-order modes, add-drop optical filters based on multimode Bragg gratings, and some emerging applications.
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Li, Jiang, Chaoyue Liu, Haitao Chen, Jingshu Guo, Ming Zhang, and Daoxin Dai. "Hybrid silicon photonic devices with two-dimensional materials." Nanophotonics 9, no. 8 (May 14, 2020): 2295–314. http://dx.doi.org/10.1515/nanoph-2020-0093.
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AbstractSilicon photonics is becoming more and more attractive in the applications of optical interconnections, optical computing, and optical sensing. Although various silicon photonic devices have been developed rapidly, it is still not easy to realize active photonic devices and circuits with silicon alone due to the intrinsic limitations of silicon. In recent years, two-dimensional (2D) materials have attracted extensive attentions due to their unique properties in electronics and photonics. 2D materials can be easily transferred onto silicon and thus provide a promising approach for realizing active photonic devices on silicon. In this paper, we give a review on recent progresses towards hybrid silicon photonics devices with 2D materials, including two parts. One is silicon-based photodetectors with 2D materials for the wavelength-bands from ultraviolet (UV) to mid-infrared (MIR). The other is silicon photonic switches/modulators with 2D materials, including high-speed electro-optical modulators, high-efficiency thermal-optical switches and low-threshold all-optical modulators, etc. These hybrid silicon photonic devices with 2D materials devices provide an alternative way for the realization of multifunctional silicon photonic integrated circuits in the future.
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Xie, Jingya, Wangcheng Ye, Linjie Zhou, Xuguang Guo, Xiaofei Zang, Lin Chen, and Yiming Zhu. "A Review on Terahertz Technologies Accelerated by Silicon Photonics." Nanomaterials 11, no. 7 (June 23, 2021): 1646. http://dx.doi.org/10.3390/nano11071646.
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In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.
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Matsuda, Nobuyuki, and Hiroki Takesue. "Generation and manipulation of entangled photons on silicon chips." Nanophotonics 5, no. 3 (August 1, 2016): 440–55. http://dx.doi.org/10.1515/nanoph-2015-0148.
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AbstractIntegrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.
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Lin, Hongtao, Zhengqian Luo, Tian Gu, Lionel C. Kimerling, Kazumi Wada, Anu Agarwal, and Juejun Hu. "Mid-infrared integrated photonics on silicon: a perspective." Nanophotonics 7, no. 2 (December 4, 2017): 393–420. http://dx.doi.org/10.1515/nanoph-2017-0085.
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AbstractThe emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.
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Yuan, Yuan, Bassem Tossoun, Zhihong Huang, Xiaoge Zeng, Geza Kurczveil, Marco Fiorentino, Di Liang, and Raymond G. Beausoleil. "Avalanche photodiodes on silicon photonics." Journal of Semiconductors 43, no. 2 (February 1, 2022): 021301. http://dx.doi.org/10.1088/1674-4926/43/2/021301.
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Abstract Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits. The Ge- or III–V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths. Herein, the last advances of monolithic and heterogeneous avalanche photodiodes on silicon are reviewed, including different device structures and semiconductor systems.
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Dong, Po, Young-Kai Chen, Guang-Hua Duan, and David T. Neilson. "Silicon photonic devices and integrated circuits." Nanophotonics 3, no. 4-5 (August 1, 2014): 215–28. http://dx.doi.org/10.1515/nanoph-2013-0023.
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AbstractSilicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review high-performance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitride-assisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.
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Hsu, Chung-Yu, Gow-Zin Yiu, and You-Chia Chang. "Free-Space Applications of Silicon Photonics: A Review." Micromachines 13, no. 7 (June 24, 2022): 990. http://dx.doi.org/10.3390/mi13070990.
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Silicon photonics has recently expanded its applications to delivering free-space emissions for detecting or manipulating external objects. The most notable example is the silicon optical phased array, which can steer a free-space beam to achieve a chip-scale solid-state LiDAR. Other examples include free-space optical communication, quantum photonics, imaging systems, and optogenetic probes. In contrast to the conventional optical system consisting of bulk optics, silicon photonics miniaturizes an optical system into a photonic chip with many functional waveguiding components. By leveraging the mature and monolithic CMOS process, silicon photonics enables high-volume production, scalability, reconfigurability, and parallelism. In this paper, we review the recent advances in beam steering technologies based on silicon photonics, including optical phased arrays, focal plane arrays, and dispersive grating diffraction. Various beam-shaping technologies for generating collimated, focused, Bessel, and vortex beams are also discussed. We conclude with an outlook of the promises and challenges for the free-space applications of silicon photonics.
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Yan, Siqi, Jeremy Adcock, and Yunhong Ding. "Graphene on Silicon Photonics: Light Modulation and Detection for Cutting-Edge Communication Technologies." Applied Sciences 12, no. 1 (December 29, 2021): 313. http://dx.doi.org/10.3390/app12010313.
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Graphene—a two-dimensional allotrope of carbon in a single-layer honeycomb lattice nanostructure—has several distinctive optoelectronic properties that are highly desirable in advanced optical communication systems. Meanwhile, silicon photonics is a promising solution for the next-generation integrated photonics, owing to its low cost, low propagation loss and compatibility with CMOS fabrication processes. Unfortunately, silicon’s photodetection responsivity and operation bandwidth are intrinsically limited by its material characteristics. Graphene, with its extraordinary optoelectronic properties has been widely applied in silicon photonics to break this performance bottleneck, with significant progress reported. In this review, we focus on the application of graphene in high-performance silicon photonic devices, including modulators and photodetectors. Moreover, we explore the trend of development and discuss the future challenges of silicon-graphene hybrid photonic devices.
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Xu, Bo, Yuhao Huang, Yuetong Fang, Zhongrui Wang, Shaoliang Yu, and Renjing Xu. "Recent Progress of Neuromorphic Computing Based on Silicon Photonics: Electronic–Photonic Co-Design, Device, and Architecture." Photonics 9, no. 10 (September 27, 2022): 698. http://dx.doi.org/10.3390/photonics9100698.
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The rapid development of neural networks has led to tremendous applications in image segmentation, speech recognition, and medical image diagnosis, etc. Among various hardware implementations of neural networks, silicon photonics is considered one of the most promising approaches due to its CMOS compatibility, accessible integration platforms, mature fabrication techniques, and abundant optical components. In addition, neuromorphic computing based on silicon photonics can provide massively parallel processing and high-speed operations with low power consumption, thus enabling further exploration of neural networks. Here, we focused on the development of neuromorphic computing based on silicon photonics, introducing this field from the perspective of electronic–photonic co-design and presenting the architecture and algorithm theory. Finally, we discussed the prospects and challenges of neuromorphic silicon photonics.
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Yi, Ailun, Chengli Wang, Liping Zhou, Yifan Zhu, Shibin Zhang, Tiangui You, Jiaxiang Zhang, and Xin Ou. "Silicon carbide for integrated photonics." Applied Physics Reviews 9, no. 3 (September 2022): 031302. http://dx.doi.org/10.1063/5.0079649.
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Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a wide range of photonic technologies with desired complexity and stability. While the next generation of applications such as ultra-high speed optical transceivers, neuromorphic computing and terabit-scale communications demand further lower power consumption and higher operating frequency. Complementing the leading silicon-based material platforms, the third-generation semiconductor, silicon carbide (SiC), offers a significant opportunity toward the advanced development of PICs in terms of its broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, controllable artificial spin defects and complementary metal oxide semiconductor-compatible fabrication process. The superior properties of SiC have enabled a plethora of nano-photonic explorations, such as waveguides, micro-cavities, nonlinear frequency converters and optically-active spin defects. This remarkable progress has prompted the rapid development of advanced SiC PICs for both classical and quantum applications. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, multi-functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and highlighted. As a still-developing integrated photonic platform, prospects and challenges of utilizing SiC material platforms in the field of integrated photonics are also discussed.
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Fang, Zhou, and Ce Zhou Zhao. "Recent Progress in Silicon Photonics: A Review." ISRN Optics 2012 (March 15, 2012): 1–27. http://dx.doi.org/10.5402/2012/428690.
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With the increasing bandwidth requirement in computing and signal processing, the inherent limitations in metallic interconnection are seriously threatening the future of traditional IC industry. Silicon photonics can provide a low-cost approach to overcome the bottleneck of the high data rate transmission by replacing the original electronic integrated circuits with photonic integrated circuits. Although the commercial promise has not been realized, this perspective gives huge impetus to the development of silicon photonics these years. This paper provides an overview of the progress and the state of the art of each component in silicon photonics, including waveguides, filters, modulators, detectors, and lasers, mainly in the last five years.
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Shen, Yanjun. "Principle And Application of Silicon Photonic Technology in Communication and Artificial Intelligence." Highlights in Science, Engineering and Technology 112 (August 20, 2024): 146–51. http://dx.doi.org/10.54097/m73tbw43.
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Silicon photonics, the innovative approach to fabricating integrated photonic systems on complementary metal-oxide-semiconductor (CMOS) platforms, has garnered significant attention over the past two years due to its potential to revolutionize data centers by offering solutions that are faster, more secure, and energy-efficient. This technology merges the scalability and precision of microelectronics with the benefits of photonic technology's high speed and low power consumption, thereby surpassing traditional discrete device solutions in efficiency and performance. Silicon optical technology, in particular, boasts superior data transmission capabilities, with optical signals achieving rates that electrical signals cannot match. Moreover, as traditional copper circuits approach their physical limitations, enhancing bandwidth becomes increasingly challenging. This article highlights the advantages of silicon photonics and explores its applications in the realms of Light Detection and Ranging (LiDAR) and quantum communication. It presents a comprehensive analysis of two distinct LiDAR methodologies and offers new insights into quantum communication, underscoring the transformative potential of silicon photonics in these advanced technological domains.
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Soref, Richard. "The Achievements and Challenges of Silicon Photonics." Advances in Optical Technologies 2008 (July 2, 2008): 1–7. http://dx.doi.org/10.1155/2008/472305.
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A brief overview of silicon photonics is given here in order to provide a context for invited and contributed papers in this special issue. Recent progress on silicon-based photonic components, photonic integrated circuits, and optoelectronic integrated circuits is surveyed. Present and potential applications are identified along with the scientific and engineering challenges that must be met in order to actualize applications. Some on-going government-sponsored projects in silicon optoelectronics are also described.
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Lin, Shawn-Yu, J. G. Fleming, and E. Chow. "Two- and Three-Dimensional Photonic Crystals Built with VLSI Tools." MRS Bulletin 26, no. 8 (August 2001): 627–31. http://dx.doi.org/10.1557/mrs2001.157.
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The drive toward miniature photonic devices has been hindered by our inability to tightly control and manipulate light. Moreover, photonics technologies are typically not based on silicon and, until recently, only indirectly benefited from the rapid advances being made in silicon processing technology. In the first part of this article, the successful fabrication of three-dimensional (3D) photonic crystals using silicon processing will be discussed. This advance has been made possible through the use of integrated-circuit (IC) fabrication technologies (e.g., very largescale integration, VLSI) and may enable the penetration of Si processing into photonics. In the second part, we describe the creation of 2D photonic-crystal slabs operating at the λ = 1.55 μm communications wavelength. This class of 2D photonic crystals is particularly promising for planar on-chip guiding, trapping, and switching of light.
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Khairulazdan, N. B., P. S. Menon, A. R. Md Zain, and D. D. Berhanuddin. "Optimization of photonic crystal structure by FDTD method to improve the light extraction efficiency in silicon." Chalcogenide Letters 19, no. 7 (July 31, 2022): 493. http://dx.doi.org/10.15251/cl.2022.197.493.
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Silicon photonics technology is on its last hurdle to complete the system with active research on enhancing the light extraction efficiency of silicon. Silicon has a very poor radiative emission efficiency due to its indirect bandgap, thus making the probability of radiative recombination to be very low. The periodic quantum confinement structures such as photonic crystals (PhCs) can be tailored to increase the radiative recombination probability at the desired wavelengths. In this paper, we have optimized the silicon photonic crystal (Si PhCs) parameters to obtain luminescence at silicon bandgap and telecommunication wavelength using FDTD method. The extraction of photons is mostly conquered in the silicon structure that has lattice constant, a: 480 nm with radius, r: 140 nm and a: 500 nm with r: 160 nm. We have also observed the emissive photon luminescence that emerges in the most stable state of optical communication wavelength at 1310 nm.
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Maram, Reza, Saket Kaushal, José Azaña, and Lawrence Chen. "Recent Trends and Advances of Silicon-Based Integrated Microwave Photonics." Photonics 6, no. 1 (January 30, 2019): 13. http://dx.doi.org/10.3390/photonics6010013.
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Multitude applications of photonic devices and technologies for the generation and manipulation of arbitrary and random microwave waveforms, at unprecedented processing speeds, have been proposed in the literature over the past three decades. This class of photonic applications for microwave engineering is known as microwave photonics (MWP). The vast capabilities of MWP have allowed the realization of key functionalities which are either highly complex or simply not possible in the microwave domain alone. Recently, this growing field has adopted the integrated photonics technologies to develop microwave photonic systems with enhanced robustness as well as with a significant reduction of size, cost, weight, and power consumption. In particular, silicon photonics technology is of great interest for this aim as it offers outstanding possibilities for integration of highly-complex active and passive photonic devices, permitting monolithic integration of MWP with high-speed silicon electronics. In this article, we present a review of recent work on MWP functions developed on the silicon platform. We particularly focus on newly reported designs for signal modulation, arbitrary waveform generation, filtering, true-time delay, phase shifting, beam steering, and frequency measurement.
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Tran, Minh, Duanni Huang, Tin Komljenovic, Jonathan Peters, Aditya Malik, and John Bowers. "Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics." Applied Sciences 8, no. 7 (July 13, 2018): 1139. http://dx.doi.org/10.3390/app8071139.
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Integrated ultra-low-loss waveguides are highly desired for integrated photonics to enable applications that require long delay lines, high-Q resonators, narrow filters, etc. Here, we present an ultra-low-loss silicon waveguide on 500 nm thick Silicon-On-Insulator (SOI) platform. Meter-scale delay lines, million-Q resonators and tens of picometer bandwidth grating filters are experimentally demonstrated. We design a low-loss low-reflection taper to seamlessly integrate the ultra-low-loss waveguide with standard heterogeneous Si/III-V integrated photonics platform to allow realization of high-performance photonic devices such as ultra-low-noise lasers and optical gyroscopes.
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Chin, Lip Ket, Yuzhi Shi, and Ai-Qun Liu. "Optical Forces in Silicon Nanophotonics and Optomechanical Systems: Science and Applications." Advanced Devices & Instrumentation 2020 (October 26, 2020): 1–14. http://dx.doi.org/10.34133/2020/1964015.
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Light-matter interactions have been explored for more than 40 years to achieve physical modulation of nanostructures or the manipulation of nanoparticle/biomolecule. Silicon photonics is a mature technology with standard fabrication techniques to fabricate micro- and nano-sized structures with a wide range of material properties (silicon oxides, silicon nitrides, p- and n-doping, etc.), high dielectric properties, high integration compatibility, and high biocompatibilities. Owing to these superior characteristics, silicon photonics is a promising approach to demonstrate optical force-based integrated devices and systems for practical applications. In this paper, we provide an overview of optical force in silicon nanophotonic and optomechanical systems and their latest technological development. First, we discuss various types of optical forces in light-matter interactions from particles or nanostructures. We then present particle manipulation in silicon nanophotonics and highlight its applications in biological and biomedical fields. Next, we discuss nanostructure mechanical modulation in silicon optomechanical devices, presenting their applications in photonic network, quantum physics, phonon manipulation, physical sensors, etc. Finally, we discuss the future perspective of optical force-based integrated silicon photonics.
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Seong, Yeolheon, Jinwook Kim, and Heedeuk Shin. "Grazing-Angle Fiber-to-Waveguide Coupler." Photonics 9, no. 11 (October 26, 2022): 799. http://dx.doi.org/10.3390/photonics9110799.
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The silicon photonics market has grown rapidly over recent decades due to the demand for high bandwidth and high data-transfer capabilities. Silicon photonics leverage well-developed semiconductor fabrication technologies to combine various photonic functionalities on the same chip. Complicated silicon photonic integrated circuits require a mass-producible packaging strategy with broadband, high coupling efficiency, and fiber-array fiber-to-chip couplers, which is a big challenge. In this paper, we propose a new approach to fiber-array fiber-to-chip couplers which have a complementary metal-oxide semiconductor-compatible silicon structure. An ultra-high numerical aperture fiber is polished at a grazing angle and positioned on a taper-in silicon waveguide. Our simulation results demonstrate a coupling efficiency of more than 90% over hundreds of nanometers and broad alignment tolerance ranges, supporting the use of a fiber array for the packaging. We anticipate that the proposed approach will be able to be used in commercialized systems and other photonic integrated circuit platforms, including those made from lithium niobate and silicon nitride.
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Zhang, Chuang, Chang-Ling Zou, Yan Zhao, Chun-Hua Dong, Cong Wei, Hanlin Wang, Yunqi Liu, Guang-Can Guo, Jiannian Yao, and Yong Sheng Zhao. "Organic printed photonics: From microring lasers to integrated circuits." Science Advances 1, no. 8 (September 2015): e1500257. http://dx.doi.org/10.1126/sciadv.1500257.
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A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.
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Zhiping Zhou, Zhiping Zhou, Zhijuan Tu Zhijuan Tu, Bing Yin Bing Yin, Wei Tan Wei Tan, Li Yu Li Yu, Huaxiang Yi Huaxiang Yi, and Xingjun Wang Xingjun Wang. "Development trends in silicon photonics." Chinese Optics Letters 11, no. 1 (2013): 012501–12506. http://dx.doi.org/10.3788/col201311.012501.
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Harris, Nicholas C., Darius Bunandar, Mihir Pant, Greg R. Steinbrecher, Jacob Mower, Mihika Prabhu, Tom Baehr-Jones, Michael Hochberg, and Dirk Englund. "Large-scale quantum photonic circuits in silicon." Nanophotonics 5, no. 3 (August 1, 2016): 456–68. http://dx.doi.org/10.1515/nanoph-2015-0146.
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AbstractQuantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today’s classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3)) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes.Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photon-pair sources and device architectures, and we discuss a path towards large-scale source integration. Finally, we review monolithic integration strategies for single-photon detectors and their essential role in on-chip feed forward operations.
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Asano, Takashi, and Susumu Noda. "Photonic Crystal Devices in Silicon Photonics." Proceedings of the IEEE 106, no. 12 (December 2018): 2183–95. http://dx.doi.org/10.1109/jproc.2018.2853197.
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Han, Changhao, Ming Jin, Yuansheng Tao, Bitao Shen, and Xingjun Wang. "Recent Progress in Silicon-Based Slow-Light Electro-Optic Modulators." Micromachines 13, no. 3 (February 28, 2022): 400. http://dx.doi.org/10.3390/mi13030400.
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As an important optoelectronic integration platform, silicon photonics has achieved significant progress in recent years, demonstrating the advantages on low power consumption, low cost, and complementary metal–oxide–semiconductor (CMOS) compatibility. Among the different silicon photonics devices, the silicon electro-optic modulator is a key active component to implement the conversion of electric signal to optical signal. However, conventional silicon Mach–Zehnder modulators and silicon micro-ring modulators both have their own limitations, which will limit their use in future systems. For example, the conventional silicon Mach–Zehnder modulators are hindered by large footprint, while the silicon micro-ring modulators have narrow optical bandwidth and high temperature sensitivity. Therefore, developing a new structure for silicon modulators to improve the performance is a crucial research direction in silicon photonics. Meanwhile, slow-light effect is an important physical phenomenon that can reduce the group velocity of light. Applying slow-light effect on silicon modulators through photonics crystal and waveguide grating structures is an attractive research point, especially in the aspect of reducing the device footprint. In this paper, we review the recent progress of silicon-based slow-light electro-optic modulators towards future communication requirements. Beginning from the principle of slow-light effect, we summarize the research of silicon photonic crystal modulators and silicon waveguide grating modulators in detail. Simultaneously, the experimental results of representative silicon slow-light modulators are compared and analyzed. Finally, we discuss the existing challenges and development directions of silicon-based slow-light electro-optic modulators for the practical applications.
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Zhang, Jiangwen, Aadithya G. Shankar, and Xihua Wang. "On-Chip Lasers for Silicon Photonics." Photonics 11, no. 3 (February 27, 2024): 212. http://dx.doi.org/10.3390/photonics11030212.
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With the growing trend in the information industry, silicon photonics technology has been explored in both academia and industry and utilized for high-bandwidth data transmission. Thanks to the benefits of silicon, such as high refractive index contrast with its oxides, low loss, substantial thermal–optical effect, and compatibility with CMOS, a range of passive and active photonic devices have been demonstrated, including waveguides, modulators, photodetectors, and lasers. The most challenging aspect remains to be the on-chip laser source, whose performance is constrained by the indirect bandgap of silicon. This review paper highlights the advancements made in the field of integrated laser sources on the silicon photonics platform. These on-chip lasers are classified according to their gain media, including V semiconductors, III–V semiconductors, two-dimensional materials, and colloidal quantum dots. The methods of integrating these lasers onto silicon are also detailed in this review.
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Jin, Ming, Ziyi Wei, Yanfang Meng, Haowen Shu, Yuansheng Tao, Bowen Bai, and Xingjun Wang. "Silicon-Based Graphene Electro-Optical Modulators." Photonics 9, no. 2 (January 31, 2022): 82. http://dx.doi.org/10.3390/photonics9020082.
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With the increasing demand for capacity in communications networks, the use of integrated photonics to transmit, process and manipulate digital and analog signals has been extensively explored. Silicon photonics, exploiting the complementary-metal-oxide-semiconductor (CMOS)-compatible fabrication technology to realize low-cost, robust, compact, and power-efficient integrated photonic circuits, is regarded as one of the most promising candidates for next-generation chip-scale information and communication technology (ICT). However, the electro-optic modulators, a key component of Silicon photonics, face challenges in addressing the complex requirements and limitations of various applications under state-of-the-art technologies. In recent years, the graphene EO modulators, promising small footprints, high temperature stability, cost-effective, scalable integration and a high speed, have attracted enormous interest regarding their hybrid integration with SiPh on silicon-on-insulator (SOI) chips. In this paper, we summarize the developments in the study of silicon-based graphene EO modulators, which covers the basic principle of a graphene EO modulator, the performance of graphene electro-absorption (EA) and electro-refractive (ER) modulators, as well as the recent advances in optical communications and microwave photonics (MWP). Finally, we discuss the emerging challenges and potential applications for the future practical use of silicon-based graphene EO modulators.
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Qiao, Qifeng, Haoyang Sun, Xinmiao Liu, Bowei Dong, Ji Xia, Chengkuo Lee, and Guangya Zhou. "Suspended Silicon Waveguide with Sub-Wavelength Grating Cladding for Optical MEMS in Mid-Infrared." Micromachines 12, no. 11 (October 26, 2021): 1311. http://dx.doi.org/10.3390/mi12111311.
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Mid-infrared (MIR) photonics are generating considerable interest because of the potential applications in spectroscopic sensing, thermal imaging, and remote sensing. Silicon photonics is believed to be a promising solution to realize MIR photonic integrated circuits (PICs). The past decade has seen a huge growth in MIR PIC building blocks. However, there is still a need for the development of MIR reconfigurable photonics to enable powerful on-chip optical systems and new functionalities. In this paper, we present an MIR (3.7~4.1 μm wavelength range) MEMS reconfiguration approach using the suspended silicon waveguide platform on the silicon-on-insulator. With the sub-wavelength grating claddings, the photonic waveguide can be well integrated with the MEMS actuator, thus offering low-loss, energy-efficient, and effective reconfiguration. We present a simulation study on the waveguide design and depict the MEMS-integration approach. Moreover, we experimentally report the suspended waveguide with propagation loss (−2.9 dB/cm) and bending loss (−0.076 dB each). The suspended waveguide coupler is experimentally investigated. In addition, we validate the proposed optical MEMS approach using a reconfigurable ring resonator design. In conclusion, we experimentally demonstrate the proposed waveguide platform’s capability for MIR MEMS-reconfigurable photonics, which empowers the MIR on-chip optical systems for various applications.
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Prete, Domenic, Francesco Amanti, Greta Andrini, Fabrizio Armani, Vittorio Bellani, Vincenzo Bonaiuto, Simone Cammarata, et al. "Hybrid Integrated Silicon Photonics Based on Nanomaterials." Photonics 11, no. 5 (April 30, 2024): 418. http://dx.doi.org/10.3390/photonics11050418.
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Integrated photonic platforms have rapidly emerged as highly promising and extensively investigated systems for advancing classical and quantum information technologies, since their ability to seamlessly integrate photonic components within the telecommunication band with existing silicon-based industrial processes offers significant advantages. However, despite this integration facilitating the development of novel devices, fostering fast and reliable communication protocols and the manipulation of quantum information, traditional integrated silicon photonics faces inherent physical limitations that necessitate a challenging trade-off between device efficiency and spatial footprint. To address this issue, researchers are focusing on the integration of nanoscale materials into photonic platforms, offering a novel approach to enhance device performance while reducing spatial requirements. These developments are of paramount importance in both classical and quantum information technologies, potentially revolutionizing the industry. In this review, we explore the latest endeavors in hybrid photonic platforms leveraging the combination of integrated silicon photonic platforms and nanoscale materials, allowing for the unlocking of increased device efficiency and compact form factors. Finally, we provide insights into future developments and the evolving landscape of hybrid integrated photonic nanomaterial platforms.
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Kazanskiy, Nikolai Lvovich, and Muhammad Ali Butt. "One-dimensional photonic crystal waveguide based on SOI platform for transverse magnetic polarization-maintaining devices." Photonics Letters of Poland 12, no. 3 (September 30, 2020): 85. http://dx.doi.org/10.4302/plp.v12i3.1044.
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In this letter, a TM-polarization C-band pass one-dimensional photonic crystal strip waveguide (1D-PCSW) is presented. The waveguide structure is based on a silicon-on-insulator platform which is easy to realize using standard CMOS technology. The numerical study is conducted via 3D-finite element method (FEM). The transmittance and polarization extinction ratio (PER) is enhanced by optimizing the geometric parameters of the device. As a result, a TM polarized light can travel in the waveguide with ~2 dB loss for all C-band telecommunication wavelength window whereas the TE polarized light suffers a high transmission loss of >30 dB. As a result, a PER of ~28.5 dB can be obtained for the whole C-band wavelengths range. The total length of the proposed device is around 8.4 µm long including 1 µm silicon strip waveguide segment on both ends. Based on our study presented in this paper, several photonic devices can be realized where strict polarization filtering is required. Full Text: PDF ReferencesB. Wang, S. Blaize, R.S-Montiel, "Nanoscale plasmonic TM-pass polarizer integrated on silicon photonics", Nanoscale, 11, 20685 (2019). CrossRef D. Dai, J.E. Bowers, "Silicon-based on-chip multiplexing technologies and devices for Peta-bit optical interconnects", Nanophotonics, 3, 283 (2014). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazanskiy, "Optical elements based on silicon photonics", Computer Optics, 43, 1079 (2019). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazanskiy, "Compact design of a polarization beam splitter based on silicon-on-insulator platform", Laser Physics, 28, 116202 (2018). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazanskiy, "A T-shaped 1 × 8 balanced optical power splitter based on 90° bend asymmetric vertical slot waveguides", Laser Physics, 29, 046207 (2019). CrossRef Q. Wang, S.-T. Ho, "Ultracompact TM-Pass Silicon Nanophotonic Waveguide Polarizer and Design", IEEE Photonics J., 2, 49 (2010). CrossRef C.-H. Chen, L. Pang, C.-H. Tsai, U. Levy, Y. Fainman, "Compact and integrated TM-pass waveguide polarizer", Opt. Express, 13, 5347 (2005). CrossRef S. Yuan, Y. Wang, Q. Huang, J. Xia, J. Yu, "Ultracompact TM-pass/TE-reflected integrated polarizer based on a hybrid plasmonic waveguide for silicon photonics", in 11th International Conference on Group IV Photonics (GFP) (IEEE, 2014), pp. 183-184. CrossRef X. Guan, P. Chen, S. Chen, P. Xu, Y. Shi, D. Dai, "Low-loss ultracompact transverse-magnetic-pass polarizer with a silicon subwavelength grating waveguide", Opt. Lett., 39, 4514 (2014). CrossRef A.E.- S. Abd-Elkader, M.F. O. Hameed, N.F. Areed, H.E.-D. Mostafa, and S.S. Obayya, "Ultracompact AZO-based TE-pass and TM-pass hybrid plasmonic polarizers", J.Opt. Soc. Am. B., 36, 652 (2019). CrossRef J. Li et al., "Photonic Crystal Waveguide Electro-Optic Modulator With a Wide Bandwidth", Journal of Lightwave Technology, 31, 1601-1607 (2013). CrossRef N. Skivesen et al., "Photonic-crystal waveguide biosensor", Optics Express, 15, 3169-3176 (2007). CrossRef S. Lin, J. Hu, L. Kimerling, K. Crozier, "Design of nanoslotted photonic crystal waveguide cavities for single nanoparticle trapping and detection", Optics Letters, 34, 3451-3453 (2009). CrossRef T. Liu, A.R. Zakharian, M. Fallahi, J.V. Moloney, M. Mansuripur, "Design of a compact photonic-crystal-based polarizing beam splitter", IEEE Photonics Technology Letters, 17, 1435-1437 (2005). CrossRef R. K. Sinha, Y. Kalra, "Design of optical waveguide polarizer using photonic band gap", Optics Express, 14, 10790 (2006). CrossRef
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Bergman, Keren, Ray Beausoleil, Dejan Milojicic, and Dejan Milojicic. "Silicon Photonics." Computer 55, no. 4 (April 2022): 78–81. http://dx.doi.org/10.1109/mc.2022.3148491.
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YAMADA, Koji. "Silicon Photonics." Review of Laser Engineering 41, no. 10 (2013): 768. http://dx.doi.org/10.2184/lsj.41.10_768.
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Ross, P. E. "Silicon photonics." IEEE Spectrum 43, no. 1 (January 2006): 54. http://dx.doi.org/10.1109/mspec.2006.1572363.
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Jalali, B., M. Paniccia, and G. Reed. "Silicon photonics." IEEE Microwave Magazine 7, no. 3 (June 2006): 58–68. http://dx.doi.org/10.1109/mmw.2006.1638290.
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Basu, P. K. "Silicon photonics." Resonance 12, no. 10 (October 2007): 37–46. http://dx.doi.org/10.1007/s12045-007-0103-5.
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Jalali, Bahram, and Sasan Fathpour. "Silicon Photonics." Journal of Lightwave Technology 24, no. 12 (December 2006): 4600–4615. http://dx.doi.org/10.1109/jlt.2006.885782.
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Monroe, Don. "Silicon photonics." Communications of the ACM 59, no. 5 (April 26, 2016): 26–28. http://dx.doi.org/10.1145/2898965.
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Cheben, Pavel, Richard Soref, David Lockwood, and Graham Reed. "Silicon Photonics." Advances in Optical Technologies 2008 (August 12, 2008): 1–2. http://dx.doi.org/10.1155/2008/510937.
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Ogawa, Kensuke. "Increase in Modulation Speed of Silicon Photonics Modulator with Quantum-Well Slab Wings: New Insights from a Numerical Study." Photonics 11, no. 6 (June 3, 2024): 535. http://dx.doi.org/10.3390/photonics11060535.
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A Silicon Photonics modulator is a high-speed photonic integrated circuit for optical data transmission in high-capacity optical networks. Silicon Photonics modulators in the configuration of a Mach–Zehnder interferometer, in which a PN-junction rib-waveguide phase shifter is inserted in each arm of the interferometer, are studied in this paper because of their superior performance of high-quality optical data generation in a wide range of spectral bands and their simplicity in fabrication processes suitable to production in foundries. Design, fabrication, and fundamental characteristics of Silicon Photonics Mach–Zehnder modulators are reviewed as an introduction to these high-speed PICs on the Silicon Photonics platform. Modulation speed, or modulation bandwidth, is a key performance item, as well as optical loss, in the application to high-speed optical transmitters. Limiting factors on modulation speed are addressed in equations. Electrical resistance–capacitance coupling, which causes optical modulation bandwidth–optical loss trade-off, is the most challenging limiting factor that limits high-speed modulation. Expansion of modulation bandwidth is not possible without increasing optical loss in the conventional approaches. A new idea including quantum-mechanical effect in the design of Silicon Photonics modulators is proposed and proved in computational analysis to resolve the bandwidth loss trade-off. By adding high-mobility quantum-well overlayers to the side slab wings of the rib-waveguide phase shifter, the modulation bandwidth is doubled without increasing optical loss to achieve a 200 Gbaud modulation rate.
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González-Fernández, Alfredo A., Mariano Aceves-Mijares, Oscar Pérez-Díaz, Joaquin Hernández-Betanzos, and Carlos Domínguez. "Embedded Silicon Nanoparticles as Enabler of a Novel CMOS-Compatible Fully Integrated Silicon Photonics Platform." Crystals 11, no. 6 (May 31, 2021): 630. http://dx.doi.org/10.3390/cryst11060630.
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The historical bottleneck for truly high scale integrated photonics is the light emitter. The lack of monolithically integrable light sources increases costs and reduces scalability. Quantum phenomena found in embedded Si particles in the nanometer scale is a way of overcoming the limitations for bulk Si to emit light. Integrable light sources based in Si nanoparticles can be obtained by different CMOS (Complementary Metal Oxide Semiconductor) -compatible materials and techniques. Such materials in combination with Si3N4 photonic elements allow for integrated Si photonics, in which photodetectors can also be included directly in standard Si wafers, taking advantage of the emission in the visible range by the embedded Si nanocrystals/nanoparticles. We present the advances and perspectives on seamless monolithic integration of CMOS-compatible visible light emitters, photonic elements, and photodetectors, which are shown to be viable and promising well within the technological limits imposed by standard fabrication methods.
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Shahbaz, Muhammad, Muhammad A. Butt, and Ryszard Piramidowicz. "Breakthrough in Silicon Photonics Technology in Telecommunications, Biosensing, and Gas Sensing." Micromachines 14, no. 8 (August 19, 2023): 1637. http://dx.doi.org/10.3390/mi14081637.
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Silicon photonics has been an area of active research and development. Researchers have been working on enhancing the integration density and intricacy of silicon photonic circuits. This involves the development of advanced fabrication techniques and novel designs to enable more functionalities on a single chip, leading to higher performance and more efficient systems. In this review, we aim to provide a brief overview of the recent advancements in silicon photonic devices employed for telecommunication and sensing (biosensing and gas sensing) applications.
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Salih, Maithem Naeem, and Alan Mickelson. "Influence of a Polyimide Coating Layer on Losses of Fabricated SOI Slot Waveguides." Photonics Letters of Poland 15, no. 2 (July 2, 2023): 15–17. http://dx.doi.org/10.4302/plp.v15i2.1190.
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We demonstrate experimentally and simultaneously the impact of the Polyimide (PI) coating layer on the coupling and propagation losses of the fabricated SOI slot waveguides at 1550 nm operation wavelength and TE polarization. Full Text: PDF References P. Dong, Y.K. Chen, G.H. Duan, and D.T. Neilson, "Silicon photonic devices and integrated circuits," Nanophot, 3, 215 (2014). CrossRef Q. Xu, V.R. Almeida, R.R. Panepucci, M. Lipson, "Experimental demonstration of guiding and confining light in nanometer-size low-refractive-index material," Opt. Lett., 29, 1626 (2004). CrossRef V.R. Almeida, Q. Xu, C.A. Barrios, M. Lipson, "Guiding and confining light in void nanostructure," Opt. Lett., 29, 1209 (2004). CrossRef A. Mickelson, "Silicon photonic slot guides for nonlinear optics," 2013 Int. Conf. Microw. Photonics, ICMAP 2013, (2013). CrossRef A. Martínez et al., "Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths," Nano Lett., 10, 1506 (2010). CrossRef C. Koos et al., "All-optical high-speed signal processing with silicon-organic hybrid slot waveguides," Nat. Photonics., 3, 216 (2009). CrossRef Y. Li, K. Cui, X. Feng, Y. Huang, F. Liu, and W. Zhang, "Ultralow propagation loss slot-waveguide in high absorption active material," IEEE Photonics J., 6, 3 (2014). CrossRef Z. Wang, N. Zhu, Y. Tang, L. Wosinski, D. Dai, S. He, "Ultracompact low-loss coupler between strip and slot waveguides," Opt. Lett., 34, 1498 (2009). CrossRef
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Shu, Haowen, Lin Chang, Yuansheng Tao, Bitao Shen, Weiqiang Xie, Ming Jin, Andrew Netherton, et al. "Microcomb-driven silicon photonic systems." Nature 605, no. 7910 (May 18, 2022): 457–63. http://dx.doi.org/10.1038/s41586-022-04579-3.
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AbstractMicrocombs have sparked a surge of applications over the past decade, ranging from optical communications to metrology1–4. Despite their diverse deployment, most microcomb-based systems rely on a large amount of bulky elements and equipment to fulfil their desired functions, which is complicated, expensive and power consuming. By contrast, foundry-based silicon photonics (SiPh) has had remarkable success in providing versatile functionality in a scalable and low-cost manner5–7, but its available chip-based light sources lack the capacity for parallelization, which limits the scope of SiPh applications. Here we combine these two technologies by using a power-efficient and operationally simple aluminium-gallium-arsenide-on-insulator microcomb source to drive complementary metal–oxide–semiconductor SiPh engines. We present two important chip-scale photonic systems for optical data transmission and microwave photonics, respectively. A microcomb-based integrated photonic data link is demonstrated, based on a pulse-amplitude four-level modulation scheme with a two-terabit-per-second aggregate rate, and a highly reconfigurable microwave photonic filter with a high level of integration is constructed using a time-stretch approach. Such synergy of a microcomb and SiPh integrated components is an essential step towards the next generation of fully integrated photonic systems.
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Ferreira de Lima, Thomas, Alexander N. Tait, Armin Mehrabian, Mitchell A. Nahmias, Chaoran Huang, Hsuan-Tung Peng, Bicky A. Marquez, et al. "Primer on silicon neuromorphic photonic processors: architecture and compiler." Nanophotonics 9, no. 13 (August 10, 2020): 4055–73. http://dx.doi.org/10.1515/nanoph-2020-0172.
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AbstractMicroelectronic computers have encountered challenges in meeting all of today’s demands for information processing. Meeting these demands will require the development of unconventional computers employing alternative processing models and new device physics. Neural network models have come to dominate modern machine learning algorithms, and specialized electronic hardware has been developed to implement them more efficiently. A silicon photonic integration industry promises to bring manufacturing ecosystems normally reserved for microelectronics to photonics. Photonic devices have already found simple analog signal processing niches where electronics cannot provide sufficient bandwidth and reconfigurability. In order to solve more complex information processing problems, they will have to adopt a processing model that generalizes and scales. Neuromorphic photonics aims to map physical models of optoelectronic systems to abstract models of neural networks. It represents a new opportunity for machine information processing on sub-nanosecond timescales, with application to mathematical programming, intelligent radio frequency signal processing, and real-time control. The strategy of neuromorphic engineering is to externalize the risk of developing computational theory alongside hardware. The strategy of remaining compatible with silicon photonics externalizes the risk of platform development. In this perspective article, we provide a rationale for a neuromorphic photonics processor, envisioning its architecture and a compiler. We also discuss how it can be interfaced with a general purpose computer, i.e. a CPU, as a coprocessor to target specific applications. This paper is intended for a wide audience and provides a roadmap for expanding research in the direction of transforming neuromorphic photonics into a viable and useful candidate for accelerating neuromorphic computing.
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Besancon, Claire, Amin Souleiman, Delphine Néel, Nicolas Vaissiere, Valentin Ramez, Frank Fournel, Loic Sanchez, et al. "(Invited) Advanced III-V-on-Si Heterogeneously Integrated Platforms for Next Generation Silicon Photonics Integrated Circuits." ECS Meeting Abstracts MA2024-01, no. 22 (August 9, 2024): 1328. http://dx.doi.org/10.1149/ma2024-01221328mtgabs.
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The field of Silicon Photonics has experienced a solid and continuous progress over the last few years, gaining in technological maturity, design tools, and new methods [1]. The deployment of low-cost, compact, and power-efficient photonic circuits with a high wafer yield and robustness stands as one of the fundamental pillars that sustain such progress [2]. Presently, photonic circuit technology has diversified its number of available platforms. Despite the fact that indium phosphide (InP) [3] and silicon-on-insulator (SOI) platforms are still considered as the workhorses of integrated photonics in terms of maturity and deployment of active (InP) and passive (SOI) components, other alternatives such as germanium-on-silicon [4], silicon nitride-on-insulator [2] or hybrid solutions combining different functional materials with Si are gaining momentum [5]. A representative example is the heterogeneous III-V/Si platform [6], which has been used to develop compact photonic circuits with on-chip gain. Contrarily to the hybrid integration, the III-V-on-Si heterogeneous integration avoids the constraints of chip-to-chip alignment while enabling the simultaneous integration of hundreds of III-V gain chips in a scalable fashion. Still, the integration methods of such III-V materials on silicon need to be improved to attain the maturity level of the monolithic III-V platform, which benefits from a complete palette of technological solutions not yet available in the III-V-on-Si heterogeneous integration. More recently, an advanced heterogeneous scheme based on wafer-seed-bonding and epitaxial regrowth has emerged [7]–[9]. The ambition is to create a generic integration scheme combining the best offered by the III-V and the Si-photonics platforms. The regrowth capability gives access to the large epitaxial toolkit available in the conventional InP monolithic platform, where several epitaxial steps are often implemented [10][11]. To cite some of them, the epitaxial regrowth of III-V materials to bury III-V lasers bonded onto silicon are object of intense research nowadays to overcome the thermally inefficient buried oxide [12]. In this paper, we will review the advances on III-V-on-Si heterogeneous integration through the implementation of several key demonstrators and building blocks for silicon photonics, including on-chip semiconductor optical amplifiers, lasers and electro-absorption modulators. We will discuss the progress and benefits of the direct seed bonding and regrowth as well as new device designs to improve the performance. References: [1] D. Thomson et al., “Roadmap on silicon photonics,” J. Opt., vol. 18, no. 7, p. 73003, 2016, doi: 10.1088/2040-8978/18/7/073003. [2] S. Y. Siew et al., “Review of Silicon Photonics Technology and Platform Development,” Journal of Lightwave Technology, vol. 39, no. 13. Institute of Electrical and Electronics Engineers Inc., pp. 4374–4389, Jul. 01, 2021, doi: 10.1109/JLT.2021.3066203. [3] M. Smit, K. Williams, and J. Van Der Tol, “Past, present, and future of InP-based photonic integration,” APL Photonics, vol. 4, no. 5, May 2019, doi: 10.1063/1.5087862. [4] J. Chrétien et al., “GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain,” ACS Photonics, vol. 6, no. 10, pp. 2462–2469, Oct. 2019, doi: 10.1021/acsphotonics.9b00712. [5] S. Lin et al., “Efficient, tunable flip-chip-integrated III-V/Si hybrid external-cavity laser array,” Opt. Express, vol. 24, no. 19, p. 21454, Sep. 2016, doi: 10.1364/oe.24.021454. [6] D. Liang and J. E. Bowers, “Recent Progress in Heterogeneous III-V-on-Silicon Photonic Integration,” Light Adv. Manuf., vol. 2, no. 1, pp. 1–25, 2021, doi: 10.37188/lam.2021.005. [7] K. Takeda, S. Matsuo, T. Fujii, K. Hasebe, T. Sato, and T. Kakitsuka, “Epitaxial growth of InP to bury directly bonded thin active layer on SiO2/Si substrate for fabricating distributed feedback lasers on silicon,” IET Optoelectron., vol. 9, no. 4, pp. 151–157, 2015, doi: 10.1049/iet-opt.2014.0138. [8] C. Besancon et al., “AlGaInAs Multi-quantum Well Lasers On Silicon-on-insulator Photonic Integrated Circuits Based On InP-seed-bonding And Epitaxial Regrowth,” Appl. Sci. , vol. 12, no. 1, Jan. 2022, doi: 10.3390/app12010263. [9] Y. Hi et al., “Electrically-Pumped 1.31 μm MQW Lasers by Direct Epitaxy on Wafer-Bonded InP-on-SOI Substrate,” in Proceedings of 2018 IEEE Photonics Conference (IPC), 2018, pp. 1–2. [10] V. Rustichelli et al., “Monolithic integration of buried-heterostructures in a generic integrated photonic foundry process,” IEEE J. Sel. Top. Quantum Electron., vol. 25, no. 5, Sep. 2019, doi: 10.1109/JSTQE.2019.2927576. [11] F. Lemaître et al., “96 nm Extended Range Laser Source Using Selective Area Growth,” in European Conference on Optical Communication, ECOC, 2018, doi: 10.1109/ECOC.2018.8535218. [12] C. Besancon et al., “AlGaInAs Multi-Quantum Well Laser on Silicon Achieved byDirect-Bonding and MOVPE Semi-Insulating Buried Heterostructure Regrowth,” in Compound Semiconductor Week 2023, Jan. 2023, vol. 12, no. 1, doi: 10.3390/app12010263.
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Spector, Steven, and Cheryl Sorace-Agaskar. "Silicon photonics devices for integrated analog signal processing and sampling." Nanophotonics 3, no. 4-5 (August 1, 2014): 313–27. http://dx.doi.org/10.1515/nanoph-2013-0036.
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AbstractSilicon photonics offers the possibility of a reduction in size weight and power for many optical systems, and could open up the ability to build optical systems with complexities that would otherwise be impossible to achieve. Silicon photonics is an emerging technology that has already been inserted into commercial communication products. This technology has also been applied to analog signal processing applications. MIT Lincoln Laboratory in collaboration with groups at MIT has developed a toolkit of silicon photonic devices with a focus on the needs of analog systems. This toolkit includes low-loss waveguides, a high-speed modulator, ring resonator based filter bank, and all-silicon photodiodes. The components are integrated together for a hybrid photonic and electronic analog-to-digital converter. The development and performance of these devices will be discussed. Additionally, the linear performance of these devices, which is important for analog systems, is also investigated.
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Wang, Xuyang, Yanxiang Jia, Xubo Guo, Jianqiang Liu, Shaofeng Wang, Wenyuan Liu, Fangyuan Sun, Jun Zou, and Yongmin Li. "Silicon photonics integrated dynamic polarization controller." Chinese Optics Letters 20, no. 4 (2022): 041301. http://dx.doi.org/10.3788/col202220.041301.
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Novack, Ari, Matt Streshinsky, Ran Ding, Yang Liu, Andy Eu-Jin Lim, Guo-Qiang Lo, Tom Baehr-Jones, and Michael Hochberg. "Progress in silicon platforms for integrated optics." Nanophotonics 3, no. 4-5 (August 1, 2014): 205–14. http://dx.doi.org/10.1515/nanoph-2013-0034.
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AbstractRapid progress has been made in recent years repurposing CMOS fabrication tools to build complex photonic circuits. As the field of silicon photonics becomes more mature, foundry processes will be an essential piece of the ecosystem for eliminating process risk and allowing the community to focus on adding value through clever design. Multi-project wafer runs are a useful tool to promote further development by providing inexpensive, low-risk prototyping opportunities to academic and commercial researchers. Compared to dedicated silicon manufacturing runs, multi-project-wafer runs offer cost reductions of 100× or more. Through OpSIS, we have begun to offer validated device libraries that allow designers to focus on building systems rather than modifying device geometries. The EDA tools that will enable rapid design of such complex systems are under intense development. Progress is also being made in developing practical optical and electronic packaging solutions for the photonic chips, in ways that eliminate or sharply reduce development costs for the user community. This paper will provide a review of the recent developments in silicon photonic foundry offerings with a focus on OpSIS, a multi-project-wafer foundry service offering a silicon photonics platform, including a variety of passive components as well as high-speed modulators and photodetectors, through the Institute of Microelectronics in Singapore.
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Cognetti, John S., Daniel J. Steiner, Minhaz Abedin, Michael R. Bryan, Conor Shanahan, Natalya Tokranova, Ethan Young, et al. "Disposable photonics for cost-effective clinical bioassays: application to COVID-19 antibody testing." Lab on a Chip 21, no. 15 (2021): 2913–21. http://dx.doi.org/10.1039/d1lc00369k.
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Rice-sized (1 × 4 mm) silicon nitride ring resonator photonic sensor chips paired with plastic micropillar fluidic cards for sample handling and optical detection yield a “disposable photonics” assay platform.
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Zhou, Zihan, Meng Chao, Xinxin Su, Shuanglin Fu, Ruonan Liu, Zhihua Li, Shuhui Bo, Zhuo Chen, Zhenlin Wu, and Xiuyou Han. "Silicon–Organic Hybrid Electro-Optic Modulator and Microwave Photonics Signal Processing Applications." Micromachines 14, no. 11 (October 25, 2023): 1977. http://dx.doi.org/10.3390/mi14111977.
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Electro-optic modulator (EOM) is one of the key devices of high-speed optical fiber communication systems and ultra-wideband microwave photonic systems. Silicon–organic hybrid (SOH) integration platform combines the advantages of silicon photonics and organic materials, providing a high electro-optic effect and compact structure for photonic integrated devices. In this paper, we present an SOH-integrated EOM with comprehensive investigation of EOM structure design, silicon waveguide fabrication with Slot structure, on-chip poling of organic electro-optic material, and characterization of EO modulation response. The SOH-integrated EOM is measured with 3 dB bandwidth of over 50 GHz and half-wave voltage length product of 0.26 V·cm. Furthermore, we demonstrate a microwave photonics phase shifter by using the fabricated SOH-integrated dual parallel Mach–Zehnder modulator. The phase shift range of 410° is completed from 8 GHz to 26 GHz with a power consumption of less than 38 mW.