Journal articles: 'Silicon photonic chip'

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Matsuda, Nobuyuki, and Hiroki Takesue. "Generation and manipulation of entangled photons on silicon chips." Nanophotonics 5, no. 3 (August 1, 2016): 440–55. http://dx.doi.org/10.1515/nanoph-2015-0148.

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AbstractIntegrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

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Li, Chenlei, Dajian Liu, and Daoxin Dai. "Multimode silicon photonics." Nanophotonics 8, no. 2 (November 23, 2018): 227–47. http://dx.doi.org/10.1515/nanoph-2018-0161.

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AbstractMultimode silicon photonics is attracting more and more attention because the introduction of higher-order modes makes it possible to increase the channel number for data transmission in mode-division-multiplexed (MDM) systems as well as improve the flexibility of device designs. On the other hand, the design of multimode silicon photonic devices becomes very different compared with the traditional case with the fundamental mode only. Since not only the fundamental mode but also the higher-order modes are involved, one of the most important things for multimode silicon photonics is the realization of effective mode manipulation, which is not difficult, fortunately because the mode dispersion in multimode silicon optical waveguide is very strong. Great progresses have been achieved on multimode silicon photonics in the past years. In this paper, a review of the recent progresses of the representative multimode silicon photonic devices and circuits is given. The first part reviews multimode silicon photonics for MDM systems, including on-chip multichannel mode (de)multiplexers, multimode waveguide bends, multimode waveguide crossings, reconfigurable multimode silicon photonic integrated circuits, multimode chip-fiber couplers, etc. In the second part, we give a discussion about the higher-order mode-assisted silicon photonic devices, including on-chip polarization-handling devices with higher-order modes, add-drop optical filters based on multimode Bragg gratings, and some emerging applications.

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Harris, Nicholas C., Darius Bunandar, Mihir Pant, Greg R. Steinbrecher, Jacob Mower, Mihika Prabhu, Tom Baehr-Jones, Michael Hochberg, and Dirk Englund. "Large-scale quantum photonic circuits in silicon." Nanophotonics 5, no. 3 (August 1, 2016): 456–68. http://dx.doi.org/10.1515/nanoph-2015-0146.

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AbstractQuantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today’s classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3)) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes.Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photon-pair sources and device architectures, and we discuss a path towards large-scale source integration. Finally, we review monolithic integration strategies for single-photon detectors and their essential role in on-chip feed forward operations.

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Zhang, Chuang, Chang-Ling Zou, Yan Zhao, Chun-Hua Dong, Cong Wei, Hanlin Wang, Yunqi Liu, Guang-Can Guo, Jiannian Yao, and Yong Sheng Zhao. "Organic printed photonics: From microring lasers to integrated circuits." Science Advances 1, no. 8 (September 2015): e1500257. http://dx.doi.org/10.1126/sciadv.1500257.

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A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.

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Seong, Yeolheon, Jinwook Kim, and Heedeuk Shin. "Grazing-Angle Fiber-to-Waveguide Coupler." Photonics 9, no. 11 (October 26, 2022): 799. http://dx.doi.org/10.3390/photonics9110799.

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The silicon photonics market has grown rapidly over recent decades due to the demand for high bandwidth and high data-transfer capabilities. Silicon photonics leverage well-developed semiconductor fabrication technologies to combine various photonic functionalities on the same chip. Complicated silicon photonic integrated circuits require a mass-producible packaging strategy with broadband, high coupling efficiency, and fiber-array fiber-to-chip couplers, which is a big challenge. In this paper, we propose a new approach to fiber-array fiber-to-chip couplers which have a complementary metal-oxide semiconductor-compatible silicon structure. An ultra-high numerical aperture fiber is polished at a grazing angle and positioned on a taper-in silicon waveguide. Our simulation results demonstrate a coupling efficiency of more than 90% over hundreds of nanometers and broad alignment tolerance ranges, supporting the use of a fiber array for the packaging. We anticipate that the proposed approach will be able to be used in commercialized systems and other photonic integrated circuit platforms, including those made from lithium niobate and silicon nitride.

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Notomi, Masaya, Takasumi Tanabe, Akihiko Shinya, Eiichi Kuramochi, and Hideaki Taniyama. "On-Chip All-Optical Switching and Memory by Silicon Photonic Crystal Nanocavities." Advances in Optical Technologies 2008 (June 22, 2008): 1–10. http://dx.doi.org/10.1155/2008/568936.

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We review our recent studies on all-optical switching and memory operations based on thermo-optic and carrier-plasma nonlinearities both induced by two-photon absorption in silicon photonic crystal nanocavities. Owing to high-Q and small volume of these photonic crystal cavities, we have demonstrated that the switching power can be largely reduced. In addition, we demonstrate that the switching time is also reduced in nanocavity devices because of their short diffusion time. These features are important for all-optical nonlinear processing in silicon photonics technologies, since silicon is not an efficient optical nonlinear material. We discuss the effect of the carrier diffusion process in our devices, and demonstrate improvement in terms of the response speed by employing ion-implantation process. Finally, we show that coupled bistable devices lead to all-optical logic, such as flip-flop operation. These results indicate that a nanocavity-based photonic crystal platform on a silicon chip may be a promising candidate for future on-chip all-optical information processing in a largely integrated fashion.

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Shu, Haowen, Lin Chang, Yuansheng Tao, Bitao Shen, Weiqiang Xie, Ming Jin, Andrew Netherton, et al. "Microcomb-driven silicon photonic systems." Nature 605, no. 7910 (May 18, 2022): 457–63. http://dx.doi.org/10.1038/s41586-022-04579-3.

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AbstractMicrocombs have sparked a surge of applications over the past decade, ranging from optical communications to metrology1–4. Despite their diverse deployment, most microcomb-based systems rely on a large amount of bulky elements and equipment to fulfil their desired functions, which is complicated, expensive and power consuming. By contrast, foundry-based silicon photonics (SiPh) has had remarkable success in providing versatile functionality in a scalable and low-cost manner5–7, but its available chip-based light sources lack the capacity for parallelization, which limits the scope of SiPh applications. Here we combine these two technologies by using a power-efficient and operationally simple aluminium-gallium-arsenide-on-insulator microcomb source to drive complementary metal–oxide–semiconductor SiPh engines. We present two important chip-scale photonic systems for optical data transmission and microwave photonics, respectively. A microcomb-based integrated photonic data link is demonstrated, based on a pulse-amplitude four-level modulation scheme with a two-terabit-per-second aggregate rate, and a highly reconfigurable microwave photonic filter with a high level of integration is constructed using a time-stretch approach. Such synergy of a microcomb and SiPh integrated components is an essential step towards the next generation of fully integrated photonic systems.

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Lin, Hongtao, Zhengqian Luo, Tian Gu, Lionel C. Kimerling, Kazumi Wada, Anu Agarwal, and Juejun Hu. "Mid-infrared integrated photonics on silicon: a perspective." Nanophotonics 7, no. 2 (December 4, 2017): 393–420. http://dx.doi.org/10.1515/nanoph-2017-0085.

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AbstractThe emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Castro, J. E., T. J. Steiner, L. Thiel, A. Dinkelacker, C. McDonald, P. Pintus, L. Chang, J. E. Bowers, and G. Moody. "Expanding the quantum photonic toolbox in AlGaAsOI." APL Photonics 7, no. 9 (September 1, 2022): 096103. http://dx.doi.org/10.1063/5.0098984.

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Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large [Formula: see text] and [Formula: see text] optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical building blocks for chip-scale quantum photonic circuits. Here we expand the quantum photonic toolbox for AlGaAsOI by demonstrating edge couplers, 3 dB splitters, tunable interferometers, and waveguide crossings with performance comparable to or exceeding silicon and silicon-nitride quantum photonic platforms. As a demonstration, we de-multiplex photonic qubits through an unbalanced interferometer, paving the route toward ultra-efficient and high-rate chip-scale demonstrations of photonic quantum computation and information applications.

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Dong, Po, Young-Kai Chen, Guang-Hua Duan, and David T. Neilson. "Silicon photonic devices and integrated circuits." Nanophotonics 3, no. 4-5 (August 1, 2014): 215–28. http://dx.doi.org/10.1515/nanoph-2013-0023.

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AbstractSilicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review high-performance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitride-assisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.

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Lin, Shawn-Yu, J. G. Fleming, and E. Chow. "Two- and Three-Dimensional Photonic Crystals Built with VLSI Tools." MRS Bulletin 26, no. 8 (August 2001): 627–31. http://dx.doi.org/10.1557/mrs2001.157.

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The drive toward miniature photonic devices has been hindered by our inability to tightly control and manipulate light. Moreover, photonics technologies are typically not based on silicon and, until recently, only indirectly benefited from the rapid advances being made in silicon processing technology. In the first part of this article, the successful fabrication of three-dimensional (3D) photonic crystals using silicon processing will be discussed. This advance has been made possible through the use of integrated-circuit (IC) fabrication technologies (e.g., very largescale integration, VLSI) and may enable the penetration of Si processing into photonics. In the second part, we describe the creation of 2D photonic-crystal slabs operating at the λ = 1.55 μm communications wavelength. This class of 2D photonic crystals is particularly promising for planar on-chip guiding, trapping, and switching of light.

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Kumar, Abhishek, Manoj Gupta, Prakash Pitchappa, Yi Ji Tan, Nan Wang, and Ranjan Singh. "Topological sensor on a silicon chip." Applied Physics Letters 121, no. 1 (July 4, 2022): 011101. http://dx.doi.org/10.1063/5.0097129.

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An ultrasensitive photonic sensor is vital for sensing matter with absolute specificity. High specificity terahertz photonic sensors are essential in many fields, including medical research, clinical diagnosis, security inspection, and probing molecular vibrations in all forms of matter. Widespread photonic sensing technology detects small frequency shifts due to the targeted specimen, thus requiring ultra-high quality ( Q) factor resonance. However, the existing terahertz waveguide resonating structures are prone to defects, possess limited Q-factor, and lack the feature of chip-scale CMOS integration. Here, inspired by the topologically protected edge state of light, we demonstrate a silicon valley photonic crystal based ultrasensitive, robust on-chip terahertz topological insulator sensor that consists of a topological waveguide critically coupled to a topological cavity with an ultra-high quality ( Q) factor of [Formula: see text]. Topologically protected cavity resonance exhibits strong resilience against disorder and multiple sharp bends. Leveraging on the extremely narrow linewidth (2.3 MHz) of topological cavity resonance, the terahertz sensor shows a record-high figure of merit of [Formula: see text]. In addition to the spectral shift, the intensity modulation of cavity resonance offers an additional sensor metric through active tuning of critical coupling in the waveguide-cavity system. We envision that the ultra-high Q photonic terahertz topological sensor could have chip-scale biomedical applications such as differentiation between normal and cancerous tissues by monitoring the water content.

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Hsu, Chung-Yu, Gow-Zin Yiu, and You-Chia Chang. "Free-Space Applications of Silicon Photonics: A Review." Micromachines 13, no. 7 (June 24, 2022): 990. http://dx.doi.org/10.3390/mi13070990.

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Silicon photonics has recently expanded its applications to delivering free-space emissions for detecting or manipulating external objects. The most notable example is the silicon optical phased array, which can steer a free-space beam to achieve a chip-scale solid-state LiDAR. Other examples include free-space optical communication, quantum photonics, imaging systems, and optogenetic probes. In contrast to the conventional optical system consisting of bulk optics, silicon photonics miniaturizes an optical system into a photonic chip with many functional waveguiding components. By leveraging the mature and monolithic CMOS process, silicon photonics enables high-volume production, scalability, reconfigurability, and parallelism. In this paper, we review the recent advances in beam steering technologies based on silicon photonics, including optical phased arrays, focal plane arrays, and dispersive grating diffraction. Various beam-shaping technologies for generating collimated, focused, Bessel, and vortex beams are also discussed. We conclude with an outlook of the promises and challenges for the free-space applications of silicon photonics.

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Sun, Siwei, Ying Chen, Yu Sun, Fengman Liu, and Liqiang Cao. "Novel Low-Loss Fiber-Chip Edge Coupler for Coupling Standard Single Mode Fibers to Silicon Photonic Wire Waveguides." Photonics 8, no. 3 (March 16, 2021): 79. http://dx.doi.org/10.3390/photonics8030079.

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Fiber-to-chip optical interconnects is a big challenge in silicon photonics application scenarios such as data centers and optical transmission systems. An edge coupler, compared to optical grating, is appealing to in the application of silicon photonics due to the high coupling efficiency between standard optical fibers (SMF-28) and the sub-micron silicon wire waveguides. In this work, we proposed a novel fiber–chip edge coupler approach with a large mode size for silicon photonic wire waveguides. The edge coupler consists of a multiple structure which was fulfilled by multiple silicon nitride layers embedded in SiO2 upper cladding, curved waveguides and two adiabatic spot size converter (SSC) sections. The multiple structure can allow light directly coupling from large mode size fiber-to-chip coupler, and then the curved waveguides and SSCs transmit the evanescent field to a 220 nm-thick silicon wire waveguide based on the silicon-on-insulator (SOI) platform. The edge coupler, designed for a standard SMF-28 fiber with 8.2 μm mode field diameter (MFD) at a wavelength of 1550 nm, exhibits a mode overlap efficiency exceeding 95% at the chip facet and the overall coupling exceeding 90%. The proposed edge coupler is fully compatible with standard microfabrication processes.

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Luan, Enxiao, Hossam Shoman, Daniel Ratner, Karen Cheung, and Lukas Chrostowski. "Silicon Photonic Biosensors Using Label-Free Detection." Sensors 18, no. 10 (October 18, 2018): 3519. http://dx.doi.org/10.3390/s18103519.

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Thanks to advanced semiconductor microfabrication technology, chip-scale integration and miniaturization of lab-on-a-chip components, silicon-based optical biosensors have made significant progress for the purpose of point-of-care diagnosis. In this review, we provide an overview of the state-of-the-art in evanescent field biosensing technologies including interferometer, microcavity, photonic crystal, and Bragg grating waveguide-based sensors. Their sensing mechanisms and sensor performances, as well as real biomarkers for label-free detection, are exhibited and compared. We also review the development of chip-level integration for lab-on-a-chip photonic sensing platforms, which consist of the optical sensing device, flow delivery system, optical input and readout equipment. At last, some advanced system-level complementary metal-oxide semiconductor (CMOS) chip packaging examples are presented, indicating the commercialization potential for the low cost, high yield, portable biosensing platform leveraging CMOS processes.

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Mu, Xin, Sailong Wu, Lirong Cheng, and H. Y. Fu. "Edge Couplers in Silicon Photonic Integrated Circuits: A Review." Applied Sciences 10, no. 4 (February 24, 2020): 1538. http://dx.doi.org/10.3390/app10041538.

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Silicon photonics has drawn increasing attention in the past few decades and is a promising key technology for future daily applications due to its various merits including ultra-low cost, high integration density owing to the high refractive index of silicon, and compatibility with current semiconductor fabrication process. Optical interconnects is an important issue in silicon photonic integrated circuits for transmitting light, and fiber-to-chip optical interconnects is vital in application scenarios such as data centers and optical transmission systems. There are mainly two categories of fiber-to-chip optical coupling: off-plane coupling and in-plane coupling. Grating couplers work under the former category, while edge couplers function as in-plane coupling. In this paper, we mainly focus on edge couplers in silicon photonic integrated circuits. We deliver an introduction to the research background, operation mechanisms, and design principles of silicon photonic edge couplers. The state-of-the-art of edge couplers is reviewed according to the different structural configurations of the device, while identifying the performance, fabrication feasibility, and applications. In addition, a brief comparison between edge couplers and grating couplers is conducted. Packaging issues are also discussed, and several prospective techniques for further improvements of edge couplers are proposed.

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Sasani Ghamsari, Morteza. "Chip-Scale Quantum Emitters." Quantum Reports 3, no. 4 (September 29, 2021): 615–42. http://dx.doi.org/10.3390/quantum3040039.

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Integration of chip-scale quantum technology was the main aim of this study. First, the recent progress on silicon-based photonic integrated circuits is surveyed, and then it is shown that silicon integrated quantum photonics can be considered a compelling platform for the future of quantum technologies. Among subsections of quantum technology, quantum emitters were selected as the object, and different quantum emitters such as quantum dots, 2D materials, and carbon nanotubes are introduced. Later on, the most recent progress is highlighted to provide an extensive overview of the development of chip-scale quantum emitters. It seems that the next step towards the practical application of quantum emitters is to generate position-controlled quantum light sources. Among developed processes, it can be recognized that droplet–epitaxial QD growth has a promising future for the preparation of chip-scale quantum emitters.

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Krochin-Yepez, Pedro-Andrei, Ulrike Scholz, and Andre Zimmermann. "CMOS-Compatible Measures for Thermal Management of Phase-Sensitive Silicon Photonic Systems." Photonics 7, no. 1 (January 1, 2020): 6. http://dx.doi.org/10.3390/photonics7010006.

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To date, several photonic applications have been demonstrated without considerable thermal management efforts. However, in phase-sensitive photonic applications, thermal management becomes of utmost importance. Thermal management of photonic systems requires not only efficient heat dissipation, but also reduction of on-chip temperature gradients. Particularly in highly integrated systems, in which several components are integrated within a single photonic integrated circuit, the reduction of on-chip temperature gradients is necessary to guarantee the correct functionality of the system. Due to their high integration density as well as their extreme temperature sensitivity, optical phased arrays are ideal examples of a system, where thermal management is required. Ideally, thermal management solutions of such systems should not require additional power for operation. Therefore, it is desired to improve the heat dissipation and to reduce temperature gradients by structural modifications of the photonic circuit. Furthermore, to cope with the advantages of silicon photonics, thermal management solutions must be compatible with series fabrication processes. In this work, complementary metal–oxide–semiconductor (CMOS)-compatible measures for thermal management of silicon photonic integrated circuits are proposed and validated by characterization of in-house fabricated thermal demonstrators. The proposed concepts are extremely efficient not only in reducing temperature gradients, but also in improving the heat dissipation from integrated heat sources.

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Veluthandath, Aneesh Vincent, and Ganapathy Senthil Murugan. "Photonic Nanojet Generation Using Integrated Silicon Photonic Chip with Hemispherical Structures." Photonics 8, no. 12 (December 17, 2021): 586. http://dx.doi.org/10.3390/photonics8120586.

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Photonic nanojet (PNJ) is a tightly focused diffractionless travelling beam generated by dielectric microparticles. The location of the PNJ depends on the refractive index of the material and it usually recedes to the interior of the microparticle when the refractive index is higher than 2, making high index materials unsuitable to produce useful PNJs while high index favours narrower PNJs. Here we demonstrate a design of CMOS compatible high index on-chip photonic nanojet based on silicon. The proposed design consists of a silicon hemisphere on a silicon substrate. The PNJs generated can be tuned by changing the radius and sphericity of the hemisphere. Oblate spheroids generate PNJs further away from the refracting surface and the PNJ length exceeds 17λ when the sphericity of the spheroid is 2.25 The proposed device can have potential applications in focal plane arrays, enhanced Raman spectroscopy, and optofluidic chips.

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Quan, Zhiqiang, Yuanjian Wan, and Jian Wang. "On-chip ultra-compact nonvolatile photonic synapse." Applied Physics Letters 121, no. 17 (October 24, 2022): 171102. http://dx.doi.org/10.1063/5.0115564.

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The important research content of modern communication systems is to realize high-speed, stable, and intelligent information transmission and processing. All-optical neural networks based on the silicon integrated technology and phase change materials (PCMs) can realize picosecond-level modulation speed, faster processing speed, and lower energy consumption compared with the traditional electrical communication system. The photonic synapse is the core component of the all-optical neural network module, but the existing photonic synapses based on PCMs require a modulation distance (MD) of several micrometers or even ten micrometers to achieve a large output intensity range. In this paper, we propose an ultra-compact nonvolatile photonic synapse, in which MD can be shortened to 1 μm, breaking the record of the minimum signal MD of the silicon photonic synapse using the PCMs. At the same time, the output intensity range of our synapse is almost twice that of the existing research. Based on this photonic synapse, we analyze the relationship between the output response and incident wavelength, which can help to design an ultra-compact photonic convolutional neural network. This work has great potential in future photonic computing and photonic communication technologies.

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Luo, Lian-Wee, Salah Ibrahim, Arthur Nitkowski, Zhi Ding, Carl B. Poitras, S. J. Ben Yoo, and Michal Lipson. "High bandwidth on-chip silicon photonic interleaver." Optics Express 18, no. 22 (October 18, 2010): 23079. http://dx.doi.org/10.1364/oe.18.023079.

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Xie, Jingya, Wangcheng Ye, Linjie Zhou, Xuguang Guo, Xiaofei Zang, Lin Chen, and Yiming Zhu. "A Review on Terahertz Technologies Accelerated by Silicon Photonics." Nanomaterials 11, no. 7 (June 23, 2021): 1646. http://dx.doi.org/10.3390/nano11071646.

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In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.

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Qiao, Qifeng, Haoyang Sun, Xinmiao Liu, Bowei Dong, Ji Xia, Chengkuo Lee, and Guangya Zhou. "Suspended Silicon Waveguide with Sub-Wavelength Grating Cladding for Optical MEMS in Mid-Infrared." Micromachines 12, no. 11 (October 26, 2021): 1311. http://dx.doi.org/10.3390/mi12111311.

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Mid-infrared (MIR) photonics are generating considerable interest because of the potential applications in spectroscopic sensing, thermal imaging, and remote sensing. Silicon photonics is believed to be a promising solution to realize MIR photonic integrated circuits (PICs). The past decade has seen a huge growth in MIR PIC building blocks. However, there is still a need for the development of MIR reconfigurable photonics to enable powerful on-chip optical systems and new functionalities. In this paper, we present an MIR (3.7~4.1 μm wavelength range) MEMS reconfiguration approach using the suspended silicon waveguide platform on the silicon-on-insulator. With the sub-wavelength grating claddings, the photonic waveguide can be well integrated with the MEMS actuator, thus offering low-loss, energy-efficient, and effective reconfiguration. We present a simulation study on the waveguide design and depict the MEMS-integration approach. Moreover, we experimentally report the suspended waveguide with propagation loss (−2.9 dB/cm) and bending loss (−0.076 dB each). The suspended waveguide coupler is experimentally investigated. In addition, we validate the proposed optical MEMS approach using a reconfigurable ring resonator design. In conclusion, we experimentally demonstrate the proposed waveguide platform’s capability for MIR MEMS-reconfigurable photonics, which empowers the MIR on-chip optical systems for various applications.

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Zhou, Hailong, Yuhe Zhao, Yanxian Wei, Feng Li, Jianji Dong, and Xinliang Zhang. "All-in-one silicon photonic polarization processor." Nanophotonics 8, no. 12 (November 2, 2019): 2257–67. http://dx.doi.org/10.1515/nanoph-2019-0310.

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AbstractWith the great developments in optical communication technology and large-scale optical integration technology, it is imperative to realize the traditional functions of polarization processing on an integration platform. Most of the existing polarization devices, such as polarization multiplexers/demultiplexers, polarization controllers, polarization analyzers, etc., perform only a single function. Definitely, integrating all these polarization functions on a chip will increase function flexibility and integration density and also cut the cost. In this article, we demonstrate an all-in-one chip-scale polarization processor based on a linear optical network. The polarization functions can be configured by tuning the array of phase shifters on the chip. We demonstrate multiple polarization processing functions, including those of a multiple-input-multiple-output polarization descrambler, polarization controller, and polarization analyzer, which are the basic building blocks of polarization processing. More functions can be realized by using an additional two-dimensional output grating. A numerical gradient descent algorithm is employed to self-configure and self-optimize these functions. Our demonstration suggests great potential for chip-scale, reconfigurable, and fully programmable photonic polarization processors with the artificial intelligence algorithm.

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Soref, Richard. "Applications of Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (April 1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.

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Silicon-based optoelectronics is a diversified technology that has grown steadily but not exponentially over the past decade. Some applications—such as smart-pixel signal processing and chip-to-chip optical interconnects—have enjoyed impressive growth, whereas other applications have remained quiescent. A few important applications such as optical diagnosis of leaky metal-oxide-semiconductor-field-effect-transistor circuits, have appeared suddenly. Over the years, research and development has unveiled some unique and significant aspects of Si-based optoelectronics. The main limitation of this technology is the lack of practical silicon light sources—Si lasers and efficient Si light-emitting devices (LEDs)—though investigators are “getting close” to the LED.Silicon-based optoelectronics refers to the integration of photonic and electronic components on a Si chip or wafer. The photonics adds value to the electronics, and the electronics offers low-cost mass-production benefits. The electronics includes complementary-metal-oxide semiconductors (CMOS), very large-scale integration (VLSI), bipolar CMOS, SiGe/Si heterojunction bipolar transistors, and heterostructure field-effect transistors. In this discussion, we will use a loose definition of optoelectronics that includes photonic and optoelectronic integrated circuits (PICs and OEICs), Si optical benches, and micro-optoelectromechanical (MOEM) platforms. Optoelectronic chips and platforms are subsystems of computer systems, communication networks, etc. Silicon substrates feature a superior native oxide, in addition to excellent thermal, mechanical, and economic properties. Silicon wafers “shine” as substrates for PICs and OEICs.

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Siddharth, Anat, Thomas Wunderer, Grigory Lihachev, Andrey S. Voloshin, Camille Haller, Rui Ning Wang, Mark Teepe, et al. "Near ultraviolet photonic integrated lasers based on silicon nitride." APL Photonics 7, no. 4 (April 1, 2022): 046108. http://dx.doi.org/10.1063/5.0081660.

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Low phase noise lasers based on the combination of III–V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators have allowed them to outperform bulk external diode and fiber lasers in both phase noise and frequency agility in the 1550 nm-telecommunication window. Here, we demonstrate for the first time a hybrid integrated laser composed of a gallium nitride-based laser diode and a silicon nitride photonic chip-based microresonator operating at record low wavelengths as low as 410 nm in the near-ultraviolet wavelength region suitable for addressing atomic transitions of atoms and ions used in atomic clocks, quantum computing, or for underwater LiDAR. By self-injection locking of the Fabry–Pérot diode laser to a high-Q (0.4 × 106) photonic integrated microresonator, we reduce the optical phase noise at 461 nm by a factor greater than 100×, limited by the device quality factor and back-reflection.

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Siddharth, Anat, Thomas Wunderer, Grigory Lihachev, Andrey S. Voloshin, Camille Haller, Rui Ning Wang, Mark Teepe, et al. "Near ultraviolet photonic integrated lasers based on silicon nitride." APL Photonics 7, no. 4 (April 1, 2022): 046108. http://dx.doi.org/10.1063/5.0081660.

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Low phase noise lasers based on the combination of III–V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators have allowed them to outperform bulk external diode and fiber lasers in both phase noise and frequency agility in the 1550 nm-telecommunication window. Here, we demonstrate for the first time a hybrid integrated laser composed of a gallium nitride-based laser diode and a silicon nitride photonic chip-based microresonator operating at record low wavelengths as low as 410 nm in the near-ultraviolet wavelength region suitable for addressing atomic transitions of atoms and ions used in atomic clocks, quantum computing, or for underwater LiDAR. By self-injection locking of the Fabry–Pérot diode laser to a high-Q (0.4 × 106) photonic integrated microresonator, we reduce the optical phase noise at 461 nm by a factor greater than 100×, limited by the device quality factor and back-reflection.

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Zinoviev, Kirill, Laura G. Carrascosa, José Sánchez del Río, Borja Sepúlveda, Carlos Domínguez, and Laura M. Lechuga. "Silicon Photonic Biosensors for Lab-on-a-Chip Applications." Advances in Optical Technologies 2008 (June 4, 2008): 1–6. http://dx.doi.org/10.1155/2008/383927.

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In the last two decades, we have witnessed a remarkable progress in the development of biosensor devices and their application in areas such as environmental monitoring, biotechnology, medical diagnostics, drug screening, food safety, and security, among others. The technology of optical biosensors has reached a high degree of maturity and several commercial products are on the market. But problems of stability, sensitivity, and size have prevented the general use of optical biosensors for real field applications. Integrated photonic biosensors based on silicon technology could solve such drawbacks, offering early diagnostic tools with better sensitivity, specificity, and reliability, which could improve the effectiveness of in-vivo and in-vitro diagnostics. Our last developments in silicon photonic biosensors will be showed, mainly related to the development of portable and highly sensitive integrated photonic sensing platforms.

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Zhang, Weifeng, and Jianping Yao. "On-chip silicon photonic integrated frequency-tunable bandpass microwave photonic filter." Optics Letters 43, no. 15 (July 24, 2018): 3622. http://dx.doi.org/10.1364/ol.43.003622.

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De Marinis, Lorenzo, Marco Cococcioni, Odile Liboiron-Ladouceur, Giampiero Contestabile, Piero Castoldi, and Nicola Andriolli. "Photonic Integrated Reconfigurable Linear Processors as Neural Network Accelerators." Applied Sciences 11, no. 13 (July 5, 2021): 6232. http://dx.doi.org/10.3390/app11136232.

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Reconfigurable linear optical processors can be used to perform linear transformations and are instrumental in effectively computing matrix–vector multiplications required in each neural network layer. In this paper, we characterize and compare two thermally tuned photonic integrated processors realized in silicon-on-insulator and silicon nitride platforms suited for extracting feature maps in convolutional neural networks. The reduction in bit resolution when crossing the processor is mainly due to optical losses, in the range 2.3–3.3 for the silicon-on-insulator chip and in the range 1.3–2.4 for the silicon nitride chip. However, the lower extinction ratio of Mach–Zehnder elements in the latter platform limits their expressivity (i.e., the capacity to implement any transformation) to 75%, compared to 97% of the former. Finally, the silicon-on-insulator processor outperforms the silicon nitride one in terms of footprint and energy efficiency.

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Usuki, T. "Robust Optical Data Transfer on Silicon Photonic Chip." Journal of Lightwave Technology 30, no. 18 (September 2012): 2933–40. http://dx.doi.org/10.1109/jlt.2012.2204726.

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Hu, Ting, Chen Qiu, Ping Yu, LongZhi Yang, WanJun Wang, XiaoQing Jiang, Mei Yang, Lei Zhang, and JianYi Yang. "Silicon photonic network-on-chip and enabling components." Science China Technological Sciences 56, no. 3 (January 9, 2013): 543–53. http://dx.doi.org/10.1007/s11431-012-5112-2.

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Tombez, L., E. J. Zhang, J. S. Orcutt, S. Kamlapurkar, and W. M. J. Green. "Methane absorption spectroscopy on a silicon photonic chip." Optica 4, no. 11 (October 26, 2017): 1322. http://dx.doi.org/10.1364/optica.4.001322.

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De Leonardis, Francesco, Richard A. Soref, and Vittorio M. N. Passaro. "Design of an on-Chip Room Temperature Group-IV Quantum Photonic Chem/Bio Interferometric Sensor Based on Parity Detection." Nanomaterials 10, no. 10 (October 7, 2020): 1984. http://dx.doi.org/10.3390/nano10101984.

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We propose and analyze three Si-based room-temperature strip-guided “manufacturable” integrated quantum photonic chem/bio sensor chips operating at wavelengths of 1550 nm, 1330 nm, and 640 nm, respectively. We propose design rules that will achieve super-sensitivity (above the classical limit) by means of mixing between states of coherent light and single-mode squeezed-light. The silicon-on-insulator (SOI), silicon-on-sapphire (SOS), and silicon nitride-on-SiO2-on Si (SiN) platforms have been investigated. Each chip is comprised of photonic building blocks: a race-track resonator, a pump filter, an integrated Mach-Zehnder interferometric chem/bio sensor, and a photonic circuit to perform parity measurements, where our homodyne measurement circuit avoids the use of single-photon-counting detectors and utilizes instead conventional photodetectors. A combination of super-sensitivity with super-resolution is predicted for all three platforms to be used for chem/bio sensing applications.

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Adamopoulos, Christos, Asmaysinh Gharia, Ali Niknejad, Vladimir Stojanović, and Mekhail Anwar. "Microfluidic Packaging Integration with Electronic-Photonic Biosensors Using 3D Printed Transfer Molding." Biosensors 10, no. 11 (November 14, 2020): 177. http://dx.doi.org/10.3390/bios10110177.

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Multiplexed sensing in integrated silicon electronic-photonic platforms requires microfluidics with both high density micro-scale channels and meso-scale features to accommodate for optical, electrical, and fluidic coupling in small, millimeter-scale areas. Three-dimensional (3D) printed transfer molding offers a facile and rapid method to create both micro and meso-scale features in complex multilayer microfluidics in order to integrate with monolithic electronic-photonic system-on-chips with multiplexed rows of 5 μm radius micro-ring resonators (MRRs), allowing for simultaneous optical, electrical, and microfluidic coupling on chip. Here, we demonstrate this microfluidic packaging strategy on an integrated silicon photonic biosensor, setting the basis for highly multiplexed molecular sensing on-chip.

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Delaney, Matthew, Ioannis Zeimpekis, Han Du, Xingzhao Yan, Mehdi Banakar, David J. Thomson, Daniel W. Hewak, and Otto L. Muskens. "Nonvolatile programmable silicon photonics using an ultralow-loss Sb2Se3 phase change material." Science Advances 7, no. 25 (June 2021): eabg3500. http://dx.doi.org/10.1126/sciadv.abg3500.

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The next generation of silicon-based photonic processors and neural and quantum networks need to be adaptable, reconfigurable, and programmable. Phase change technology offers proven nonvolatile electronic programmability; however, the materials used to date have shown prohibitively high optical losses, which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material Sb2Se3 for ultralow-loss programmable silicon photonics. The favorable combination of large refractive index contrast and ultralow losses seen in Sb2Se3 facilitates an unprecedented optical phase control exceeding 10π radians in a Mach-Zehnder interferometer. To demonstrate full control over the flow of light, we introduce nanophotonic digital patterning as a previously unexplored conceptual approach with a footprint orders of magnitude smaller than state-of-the-art interferometer meshes. Our approach enables a wealth of possibilities in high-density reconfiguration of optical functionalities on silicon chip.

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Goki, Imran, Porzi, Toccafondo, Fresi, Cavaliere, and Potì. "Lossless WDM PON Photonic Integrated Receivers Including SOAs." Applied Sciences 9, no. 12 (June 15, 2019): 2457. http://dx.doi.org/10.3390/app9122457.

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The role of a semiconductor optical amplifier (SOA) for amplifying downstream traffic at optical network terminals (ONT) within a silicon-photonics integrated receiver in a high capacity passive optical network (PON) is investigated. The nearly traveling wave SOA effects are evaluated by considering fabrication and link loss constraints through numerical analysis and experimental validation. The impact of hybrid integration of a SOA chip on a silicon on insulator (SOI) photonic chip using the flip chip bonding technique on SOA design is evaluated through numerical analysis of a multi section cavity model. The performance of the proposed ONT receiver design employing twin parallel SOAs is evaluated experimentally on a 32 × 25 Gb/s OOK WDM transmission system considering cross gain modulation (XGM) and amplified spontaneous emission (ASE) constraints. The XGM impact is evaluated through 32 channel wavelength division multiplexing (WDM) transmission and a likely PON worst case scenario of high channel power difference (~10 dB) between adjacent channels. The impact of ASE is evaluated through the worst-case polarization condition, i.e., when all of the signal is coupled to only one. Successful transmission was achieved in both worst-case conditions with limited impact on performance. SOA results indicate that a maximum residual facet reflectivity of 4 × 10−4 for the chip-bonded device can lead to a power penalty below 2 dB in a polarization-diversity twin SOAs receiver.

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Liu, Jiacheng, Chao Wu, Gongyu Xia, Qilin Zheng, Zhihong Zhu, and Ping Xu(). "Bandwidth-tunable silicon nitride microring resonators." Chinese Physics B 31, no. 1 (January 1, 2022): 014201. http://dx.doi.org/10.1088/1674-1056/ac2e64.

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We designed a reconfigurable dual-interferometer coupled silicon nitride microring resonator. By tuning the integrated heater on interferometer’s arms, the “critical coupling” bandwidth of resonant mode is continuously adjustable whose quality factor varies from 7.9 × 104 to 1.9 × 105 with the extinction ratio keeping higher than 25 dB. Also a variety of coupling spanning from “under-coupling” to “over-coupling” were achieved, showing the ability to tune the quality factor from 6.0 × 103 to 2.3 × 105. Our design can provide an adjustable filtering method on silicon nitride photonic chip and contribute to optimize the nonlinear process for quantum photonics and all-optical signal processing.

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Jimarez, Miguel. "Si Photonics Deployment Using Cu Pillar Interconnect and Chip On Wafer Platform." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, DPC (January 1, 2016): 001663–81. http://dx.doi.org/10.4071/2016dpc-wp41.

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We introduce a high-speed 4x25Gbps, MSA-compliant, QSFP transceiver built on a Silicon Photonics platform. The transceiver integrates high sensitivity receivers, CTLE, clock recovery, modulator drivers and BIST on a TSMC 28nm die connected to the photonic die thru a fine pitch (50um) Copper Pillar interface. A wafer-scale approach, Chip on Wafer, CoW, is used to assemble the electronic die and the light source on to the photonic die, so that the full optical path can be tested, at speed, in loopback configuration in wafer form, using a standard ATE solution. This presentation focuses on the CoW assembly development aspects of the transceiver. Wafer probe and bump, die processing services, CoW assembly and Back End of Line, BEOL, Test Services will be presented.

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Payne, D. A., and J. C. F. Matthews. "A CMOS-compatible heterogeneous interferometer for chip-scale temperature sensing." Applied Physics Letters 121, no. 26 (December 26, 2022): 261104. http://dx.doi.org/10.1063/5.0128130.

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We report a photonic temperature sensor with enhanced performance in both broad- and narrow-bandwidth optical measurements. The device consists of a heterogeneously integrated Mach–Zehnder interferometer with arms composed of silicon and silicon nitride waveguides whose thermo-optic coefficients differ by an order of magnitude. The waveguides are fabricated in distinct layers of a monolithic device and guide light in a single transverse-electric mode. The resulting small bend radii enable compact sensing of temperatures local to integrated photonic components with a device footprint of 580 × 410 [Formula: see text]. Furthermore, the dual layers of the sensor enable overlaying of the spiral arms of the interferometer over each other or other photonic circuit components. We measure a sensitivity of 324 pm/K, an over threefold enhancement compared to the measurement of an asymmetric Mach–Zehnder constructed of silicon waveguides on the same device. We additionally define a useful figure of merit for the side-of-fringe measurement regime, which uses direct detection of a narrow linewidth laser and show that the reported device is also competitive on this metric.

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Liu, Xu, Xudong Zhu, Chunqing Wang, Yifan Cao, Baihang Wang, Hanwen Ou, Yizheng Wu, et al. "Silicon-Based Metastructure Optical Scattering Multiply–Accumulate Computation Chip." Nanomaterials 12, no. 13 (June 21, 2022): 2136. http://dx.doi.org/10.3390/nano12132136.

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Optical neural networks (ONN) have become the most promising solution to replacing electronic neural networks, which have the advantages of large bandwidth, low energy consumption, strong parallel processing ability, and super high speed. Silicon-based micro-nano integrated photonic platforms have demonstrated good compatibility with complementary metal oxide semiconductor (CMOS) processing. Therefore, without completely changing the existing silicon-based fabrication technology, optoelectronic hybrid devices or all-optical devices of better performance can be achieved on such platforms. To meet the requirements of smaller size and higher integration for silicon photonic computing, the topology of a four-channel coarse wavelength division multiplexer (CWDM) and an optical scattering unit (OSU) are inversely designed and optimized by Lumerical software. Due to the random optical power splitting ratio and incoherency, the intensities of different input signals from CWDM can be weighted and summed directly by the subsequent OSU to accomplish arbitrary multiply–accumulate (MAC) operations, therefore supplying the core foundation for scattering ONN architecture.

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Ghasemi, Farshid, Maysamreza Chamanzar, Ali A. Eftekhar, and Ali Adibi. "An efficient technique for the reduction of wavelength noise in resonance-based integrated photonic sensors." Analyst 139, no. 22 (2014): 5901–10. http://dx.doi.org/10.1039/c4an01292e.

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Nitiss, Edgars, Jianqi Hu, Anton Stroganov, and Camille-Sophie Brès. "Optically reconfigurable quasi-phase-matching in silicon nitride microresonators." Nature Photonics 16, no. 2 (January 6, 2022): 134–41. http://dx.doi.org/10.1038/s41566-021-00925-5.

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AbstractQuasi-phase-matching has long been a widely used approach in nonlinear photonics, enabling efficient parametric frequency conversions such as second-harmonic generation. However, in silicon photonics the task remains challenging, as materials best suited for photonic integration lack second-order susceptibility (χ(2)), and means for achieving momentum conservation are limited. Here we present optically reconfigurable quasi-phase-matching in large-radius silicon nitride microresonators, resulting in up to 12.5-mW on-chip second-harmonic generated power and a conversion efficiency of 47.6% W−1. Most importantly, we show that such all-optical poling can occur unconstrained from intermodal phase-matching, leading to broadly tunable second-harmonic generation. We confirm the phenomenon by two-photon imaging of the inscribed χ(2) grating structures within the microresonators as well as by in situ tracking of both the pump and second-harmonic mode resonances during all-optical poling. These results unambiguously establish that the photogalvanic effect, responsible for all-optical poling, can overcome phase mismatch constraints, even in resonant systems.

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Wu, Xinru, Chaoran Huang, Ke Xu, Chester Shu, and Hon Ki Tsang. "Mode-Division Multiplexing for Silicon Photonic Network-on-Chip." Journal of Lightwave Technology 35, no. 15 (August 1, 2017): 3223–28. http://dx.doi.org/10.1109/jlt.2017.2677085.

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Vlasov, Yurii A., Xiang-Zheng Bo, James C. Sturm, and David J. Norris. "On-chip natural assembly of silicon photonic bandgap crystals." Nature 414, no. 6861 (November 2001): 289–93. http://dx.doi.org/10.1038/35104529.

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Ono, Takafumi, Gary F. Sinclair, Damien Bonneau, Mark G. Thompson, Jonathan C. F. Matthews, and John G. Rarity. "Observation of nonlinear interference on a silicon photonic chip." Optics Letters 44, no. 5 (March 1, 2019): 1277. http://dx.doi.org/10.1364/ol.44.001277.

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Wang, Jian, and Yun Long. "On-chip silicon photonic signaling and processing: a review." Science Bulletin 63, no. 19 (October 2018): 1267–310. http://dx.doi.org/10.1016/j.scib.2018.05.038.

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Klimov, Nikolai N., Sunil Mittal, Michaela Berger, and Zeeshan Ahmed. "On-chip silicon waveguide Bragg grating photonic temperature sensor." Optics Letters 40, no. 17 (August 17, 2015): 3934. http://dx.doi.org/10.1364/ol.40.003934.

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Lin, Zhongjin, Tigran Dadalyan, Simon Bélanger-de Villers, Tigran Galstian, and Wei Shi. "Chip-scale full-Stokes spectropolarimeter in silicon photonic circuits." Photonics Research 8, no. 6 (May 14, 2020): 864. http://dx.doi.org/10.1364/prj.385008.

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ONO, Takafumi, Gary F. SINCLAIR, Damien BONNEAU, Mark G. THOMPSON, Jonathan C. F. MATTHEWS, and John G. RARITY. "Evaluating a Nonlinear Interferometer on an Silicon Photonic Chip." Review of Laser Engineering 48, no. 9 (2020): 499. http://dx.doi.org/10.2184/lsj.48.9_499.

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Journal articles on the topic 'Silicon photonic chip'

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