Academic literature on the topic 'Silicon photonic chip'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Silicon photonic chip.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Journal articles on the topic "Silicon photonic chip"
1
Matsuda, Nobuyuki, and Hiroki Takesue. "Generation and manipulation of entangled photons on silicon chips." Nanophotonics 5, no. 3 (August 1, 2016): 440–55. http://dx.doi.org/10.1515/nanoph-2015-0148.
Full textAbstract:
AbstractIntegrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.
2
Li, Chenlei, Dajian Liu, and Daoxin Dai. "Multimode silicon photonics." Nanophotonics 8, no. 2 (November 23, 2018): 227–47. http://dx.doi.org/10.1515/nanoph-2018-0161.
Full textAbstract:
AbstractMultimode silicon photonics is attracting more and more attention because the introduction of higher-order modes makes it possible to increase the channel number for data transmission in mode-division-multiplexed (MDM) systems as well as improve the flexibility of device designs. On the other hand, the design of multimode silicon photonic devices becomes very different compared with the traditional case with the fundamental mode only. Since not only the fundamental mode but also the higher-order modes are involved, one of the most important things for multimode silicon photonics is the realization of effective mode manipulation, which is not difficult, fortunately because the mode dispersion in multimode silicon optical waveguide is very strong. Great progresses have been achieved on multimode silicon photonics in the past years. In this paper, a review of the recent progresses of the representative multimode silicon photonic devices and circuits is given. The first part reviews multimode silicon photonics for MDM systems, including on-chip multichannel mode (de)multiplexers, multimode waveguide bends, multimode waveguide crossings, reconfigurable multimode silicon photonic integrated circuits, multimode chip-fiber couplers, etc. In the second part, we give a discussion about the higher-order mode-assisted silicon photonic devices, including on-chip polarization-handling devices with higher-order modes, add-drop optical filters based on multimode Bragg gratings, and some emerging applications.
3
Harris, Nicholas C., Darius Bunandar, Mihir Pant, Greg R. Steinbrecher, Jacob Mower, Mihika Prabhu, Tom Baehr-Jones, Michael Hochberg, and Dirk Englund. "Large-scale quantum photonic circuits in silicon." Nanophotonics 5, no. 3 (August 1, 2016): 456–68. http://dx.doi.org/10.1515/nanoph-2015-0146.
Full textAbstract:
AbstractQuantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today’s classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3)) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes.Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photon-pair sources and device architectures, and we discuss a path towards large-scale source integration. Finally, we review monolithic integration strategies for single-photon detectors and their essential role in on-chip feed forward operations.
4
Zhang, Chuang, Chang-Ling Zou, Yan Zhao, Chun-Hua Dong, Cong Wei, Hanlin Wang, Yunqi Liu, Guang-Can Guo, Jiannian Yao, and Yong Sheng Zhao. "Organic printed photonics: From microring lasers to integrated circuits." Science Advances 1, no. 8 (September 2015): e1500257. http://dx.doi.org/10.1126/sciadv.1500257.
Full textAbstract:
A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.
5
Seong, Yeolheon, Jinwook Kim, and Heedeuk Shin. "Grazing-Angle Fiber-to-Waveguide Coupler." Photonics 9, no. 11 (October 26, 2022): 799. http://dx.doi.org/10.3390/photonics9110799.
Full textAbstract:
The silicon photonics market has grown rapidly over recent decades due to the demand for high bandwidth and high data-transfer capabilities. Silicon photonics leverage well-developed semiconductor fabrication technologies to combine various photonic functionalities on the same chip. Complicated silicon photonic integrated circuits require a mass-producible packaging strategy with broadband, high coupling efficiency, and fiber-array fiber-to-chip couplers, which is a big challenge. In this paper, we propose a new approach to fiber-array fiber-to-chip couplers which have a complementary metal-oxide semiconductor-compatible silicon structure. An ultra-high numerical aperture fiber is polished at a grazing angle and positioned on a taper-in silicon waveguide. Our simulation results demonstrate a coupling efficiency of more than 90% over hundreds of nanometers and broad alignment tolerance ranges, supporting the use of a fiber array for the packaging. We anticipate that the proposed approach will be able to be used in commercialized systems and other photonic integrated circuit platforms, including those made from lithium niobate and silicon nitride.
6
Notomi, Masaya, Takasumi Tanabe, Akihiko Shinya, Eiichi Kuramochi, and Hideaki Taniyama. "On-Chip All-Optical Switching and Memory by Silicon Photonic Crystal Nanocavities." Advances in Optical Technologies 2008 (June 22, 2008): 1–10. http://dx.doi.org/10.1155/2008/568936.
Full textAbstract:
We review our recent studies on all-optical switching and memory operations based on thermo-optic and carrier-plasma nonlinearities both induced by two-photon absorption in silicon photonic crystal nanocavities. Owing to high-Q and small volume of these photonic crystal cavities, we have demonstrated that the switching power can be largely reduced. In addition, we demonstrate that the switching time is also reduced in nanocavity devices because of their short diffusion time. These features are important for all-optical nonlinear processing in silicon photonics technologies, since silicon is not an efficient optical nonlinear material. We discuss the effect of the carrier diffusion process in our devices, and demonstrate improvement in terms of the response speed by employing ion-implantation process. Finally, we show that coupled bistable devices lead to all-optical logic, such as flip-flop operation. These results indicate that a nanocavity-based photonic crystal platform on a silicon chip may be a promising candidate for future on-chip all-optical information processing in a largely integrated fashion.
7
Shu, Haowen, Lin Chang, Yuansheng Tao, Bitao Shen, Weiqiang Xie, Ming Jin, Andrew Netherton, et al. "Microcomb-driven silicon photonic systems." Nature 605, no. 7910 (May 18, 2022): 457–63. http://dx.doi.org/10.1038/s41586-022-04579-3.
Full textAbstract:
AbstractMicrocombs have sparked a surge of applications over the past decade, ranging from optical communications to metrology1–4. Despite their diverse deployment, most microcomb-based systems rely on a large amount of bulky elements and equipment to fulfil their desired functions, which is complicated, expensive and power consuming. By contrast, foundry-based silicon photonics (SiPh) has had remarkable success in providing versatile functionality in a scalable and low-cost manner5–7, but its available chip-based light sources lack the capacity for parallelization, which limits the scope of SiPh applications. Here we combine these two technologies by using a power-efficient and operationally simple aluminium-gallium-arsenide-on-insulator microcomb source to drive complementary metal–oxide–semiconductor SiPh engines. We present two important chip-scale photonic systems for optical data transmission and microwave photonics, respectively. A microcomb-based integrated photonic data link is demonstrated, based on a pulse-amplitude four-level modulation scheme with a two-terabit-per-second aggregate rate, and a highly reconfigurable microwave photonic filter with a high level of integration is constructed using a time-stretch approach. Such synergy of a microcomb and SiPh integrated components is an essential step towards the next generation of fully integrated photonic systems.
8
Lin, Hongtao, Zhengqian Luo, Tian Gu, Lionel C. Kimerling, Kazumi Wada, Anu Agarwal, and Juejun Hu. "Mid-infrared integrated photonics on silicon: a perspective." Nanophotonics 7, no. 2 (December 4, 2017): 393–420. http://dx.doi.org/10.1515/nanoph-2017-0085.
Full textAbstract:
AbstractThe emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.
9
Castro, J. E., T. J. Steiner, L. Thiel, A. Dinkelacker, C. McDonald, P. Pintus, L. Chang, J. E. Bowers, and G. Moody. "Expanding the quantum photonic toolbox in AlGaAsOI." APL Photonics 7, no. 9 (September 1, 2022): 096103. http://dx.doi.org/10.1063/5.0098984.
Full textAbstract:
Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large [Formula: see text] and [Formula: see text] optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical building blocks for chip-scale quantum photonic circuits. Here we expand the quantum photonic toolbox for AlGaAsOI by demonstrating edge couplers, 3 dB splitters, tunable interferometers, and waveguide crossings with performance comparable to or exceeding silicon and silicon-nitride quantum photonic platforms. As a demonstration, we de-multiplex photonic qubits through an unbalanced interferometer, paving the route toward ultra-efficient and high-rate chip-scale demonstrations of photonic quantum computation and information applications.
10
Dong, Po, Young-Kai Chen, Guang-Hua Duan, and David T. Neilson. "Silicon photonic devices and integrated circuits." Nanophotonics 3, no. 4-5 (August 1, 2014): 215–28. http://dx.doi.org/10.1515/nanoph-2013-0023.
Full textAbstract:
AbstractSilicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review high-performance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitride-assisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.
Dissertations / Theses on the topic "Silicon photonic chip"
1
Li, Qing. "Densely integrated photonic structures for on-chip signal processing." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/49035.
Full textAbstract:
Microelectronics has enjoyed great success in the past century. As the technology node progresses, the complementary metal-oxide-semiconductor scaling has already reached a wall, and serious challenges in high-bandwidth interconnects and fast-speed signal processing arise. The incorporation of photonics to microelectronics provides potential solutions. The theme of this thesis is focused on the novel applications of travelling-wave microresonators such as microdisks and microrings for the on-chip optical interconnects and signal processing. Challenges arising from these applications including theoretical and experimental ones are addressed. On the theoretical aspect, a modified version of coupled mode theory is offered for the TM-polarization in high index contrast material systems. Through numerical comparisons, it is shown that our modified coupled mode theory is more accurate than all the existing ones. The coupling-induced phase responses are also studied, which is of critical importance to coupled-resonator structures. Different coupling structures are studied by a customized numerical code, revealing that the phase response of symmetric couplers with the symmetry about the wave propagating direction can be simply estimated while the one of asymmetric couplers is more complicated. Mode splitting and scattering loss, which are two important features commonly observed in the spectrum of high-Q microresonators, are also investigated. Our review of the existing analytical approaches shows that they have only achieved partial success. Especially, different models have been proposed for several distinct regimes and cannot be reconciled. In this thesis, a unified approach is developed for the general case to achieve a complete understanding of these two effects. On the experimental aspect, we first develop a new fabrication recipe with a focus on the accurate dimensional control and low-loss performance. HSQ is employed as the electron-beam resist, and the lithography and plasma etching steps are both optimized to achieve vertical and smooth sidewalls. A third-order temperature-insensitive coupled-resonator filter is designed and demonstrated in the silicon-on-insulator (SOI) platform, which serves as a critical building block element in terabit/s on-chip networks. Two design challenges, i.e., a broadband flat-band response and a temperature-insensitive design, are coherently addressed by employing the redundant bandwidth of the filter channel caused by the dispersion as thermal guard band. As a result, the filter can accommodate 21 WDM channels with a data rate up to 100 gigabit/s per wavelength channel, while providing a sufficient thermal guard band to tolerate more than ±15°C temperature fluctuations in the on-chip environment. In this thesis, high-Q microdisk resonators are also proposed to be used as low-loss delay lines for narrowband filters. Pulley coupling scheme is used to selectively couple to one of the radial modes of the microdisk and also to achieve a strong coupling. A first-order tunable narrowband filter based on the microdisk-based delay line is experimentally demonstrated in an SOI platform, which shows a tunable bandwidth from 4.1 GHz to 0.47 GHz with an overall size of 0.05 mm². Finally, to address the challenges for the resonator-based delay lines encountered in the SOI platform, we propose to vertically integrate silicon nitride to the SOI platform, which can potentially have significantly lower propagation loss and higher power handling capability. High-Q silicon nitride microresonators are demonstrated; especially, microresonators with a 16 million intrinsic Q and a moderate size of 240 µm radius are realized, which is one order of magnitude improvement compared to what can be achieved in the SOI platform using the same fabrication technology. We have also successfully grown silicon nitride on top of SOI and a good coupling has been achieved between the silicon nitride and the silicon layers.
2
Yi, Yasha 1974. "On-chip silicon based photonic structures : photonic band gap and quasi-photonic band gap materials." Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/29457.
Full textAbstract:
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 2004."June 2004."
Includes bibliographical references (leaves 170-180).
This thesis focuses on integrated silicon based photonic structures, photonic band gap (PBG) and quasi-photonic band gap (QPX) structures, which are based on high refractive index contrast dielectric layers and CMOS compatibility. We developed a new type of silicon waveguide - Photonic Crystal (PC) cladding waveguide is studied based on PBG principle. The refractive index in the new PC cladding waveguide core therefore has a large flexibility. Low index core (e.g. SiO2) or hollow core waveguide can be realized with our PC cladding waveguide structure. The fabrication of the waveguide is compatible to CMOS process. To demonstrate the PBG guiding mechanism, we utilized prism coupling to the Asymmetric PC cladding waveguide and the effective index of the propagation mode is measured directly. The measured effective mode index is less than both Si and Si3N4 cladding layers, which is clear demonstration of the photonic band gap guiding principle. We also fabricated and measured the PC cladding channel waveguide. Potential applications include high power transmission, low dispersion, thin cladding thickness and nonlinear properties engineering. Secondly, we developed a Si-based multi-channel optical filter with tunability, which is based on omnidirectional reflecting photonic band gap structure with a relatively large air gap defect. Using only one device, multi channel filter with tunability around two telecom wavelength 1.55[mu]m and 1.3[mu]m by electrostatic force is realized. Four widely spaced resonant modes within the photonic band gap are observed, which is in good agreement with numerical simulations.
(cont.) The whole process is compatible with current microelectronics process technology. There are several potential applications of this technology in wavelength division multiplexing (WDM) devices. Thirdly, to further extend the photonic crystal idea, we studied the quasi-photonic crystal structures and their properties, especially for the fractal photonic band gap properties and the transparent resonant transmission states. A-periodic Si/SiO2 Thue-Morse (T-M) multilayer structures have been fabricated, for the first time, to investigate both the scaling properties and the omnidirectional reflectance at the fundamental optical band-gap. Variable angle reflectance data have experimentally demonstrated a large reflectance band-gap in the optical spectrum of a T-M quasicrystal, in agreement with transfer matrix simulations. The physical origin of the T-M omnidirectional band-gap has been explained as a result of periodic spatial correlations in the complex T-M structure. The unprecedented degree of structural flexibility of T-M systems can provide an attractive alternative to photonic crystals for the fabrication of photonic devices.
by Yasha Yi.
Ph.D.
3
Polster, Robert. "Architecture of Silicon Photonic Links." Thesis, Paris 11, 2015. http://www.theses.fr/2015PA112177/document.
Full textAbstract:
Les futurs calculateurs de haute performance (HPC) devront faire face à deux défis majeurs : la densité de la bande passante d'interconnexion et les problématiques de consommation d'énergie. La photonique silicium est aujourd’hui perçue comme une solution solide pour aborder ces questions, tant du fait de ses performances que de sa viabilité économique en raison de sa compatibilité directe avec la microélectronique CMOS. Actuellement, une tendance de fond conduit à remplacer les interconnexions métalliques par des liens optiques ; cette évolution a été initiée sur des liaisons grandes distances mais atteint actuellement le niveau des liaisons entre cartes électroniques et pourrait conduire à moyen terme à l’intégration de liens optiques au sein mêmes des circuits intégrés électroniques. La prochaine étape est en effet envisagée pour l'interconnexion des processeurs au sein de puces multi-cœurs en positionnant les liens photoniques sur un même support de silicium (« interposer »). Plusieurs travaux ont démontré la possibilité d'intégrer tous les éléments nécessaires pour la réalisation de liaisons optiques sur un substrat de silicium ouvrant des perspectives de co-intégration optique et électronique très riches.Dans ce contexte, la première contribution de cette thèse est l'optimisation d'un lien de photonique de silicium en terme d'efficacité énergétique par bit (à minimiser). L'optimisation que nous avons conduite a pris en compte une modélisation de la consommation d'énergie pour le laser de la liaison, celle de l’étape dé-sérialisation des données, du résonateur en anneau considéré comme modulateur optique et des circuits de réception (« front-end ») et de décision. Les résultats ont montré que les principales contributions à la consommation de puissance au sein d’un lien optique sont la puissance consommée par le laser et les circuits d’alimentation du modulateur électro-optique. En considérant des paramètres de consommation extraits de simulations numériques et de travaux publiés dans des publications récentes, le débit optimal identifié se trouve dans la plage comprise entre 8 Gbits/seconde et 22 Gbits/seconde selon le nœud technologique CMOS utilisé (65nm à 28nm FD SOI). Il est également apparu qu’une diminution de la consommation de puissance statique du modulateur utilisé pourrait encore ramener ce débit optimal en-dessous de 8 Gbits/seconde.Afin de vérifier ces résultats, un circuit intégré récepteur de liaison optique a été conçu et fabriqué en se basant sur un débit de fonctionnement de 8 Gbits/seconde. Le récepteur utilise une technique d’entrelacement temporel destinée à réduire la vitesse d'horloge nécessaire et à éviter potentiellement l’étape de dé-sérialisation dédiée des informationsFuture high performance computer (HPC) systems will face two major challenges: interconnection bandwidth density and power consumption. Silicon photonic technology has been proposed recently as a cost-effective solution to tackle these issues. Currently, copper interconnections are replaced by optical links at rack and board level in HPCs and data centers. The next step is the interconnection of multi-core processors, which are placed in the same package on silicon interposers, and define the basic building blocks of these computers. Several works have demonstrated the possibility of integrating all elements needed for the realization of short optical links on a silicon substrate.The first contribution of this thesis is the optimization of a silicon photonic link for highest energy efficiency in terms of energy per bit. The optimization provides energy consumption models for the laser, a de- and serialization stage, a ring resonator as modulator and supporting circuitry, a receiver front-end and a decision stage. The optimization shows that the main consumers in optical links is the power consumed by the laser and the modulator's supporting circuitry. Using consumption parameters either gathered by design and simulation or found in recent publications, the optimal bit rate is found in the range between 8 Gbps and 22 Gbps, depending on the used CMOS technology. Nevertheless, if the static power consumption of modulators is reduced it could decrease even below 8 Gbps.To apply the results from the optimization an optical link receiver was designed and fabricated. It is designed to run at a bit rate of 8 Gbps. The receiver uses time interleaving to reduce the needed clock speed and aleviate the need of a dedicated deserialization stage. The front-end was adapted for a wide dynamic input range. In order to take advantage of it, a fast mechanism is proposed to find the optimal threshold voltage to distinguish ones from zeros.Furthermore, optical clock channels are explored. Using silicon photonics a clock can be distributed to several processors with very low skew. This opens the possibility to clock all chips synchronously, relaxing the requirements for buffers that are needed within the communication channels. The thesis contributes to this research direction by presenting two novel optical clock receivers. Clock distribution inside chips is a major power consumer, with small adaptation the clock receivers could also be used inside on-chip clocking trees
4
Li, Hui. "Design methods for energy-efficient silicon photonic interconnects on chip." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEC059/document.
Full textAbstract:
La photonique au silicium est une technologie émergente considérée comme l'une des solutions clés pour les interconnexions sur puce de génération future, offrant plusieurs avantages potentiels tels qu'une faible latence de transmission et une bande passante élevée. Cependant, elle reste confrontée à des défis en matière d'efficacité énergétique. Différentes topologies, layout et architectures offrent diverses options d'interconnexion. Ceci conduit à une grande variation des pertes optiques, qui est l'un des facteurs prédominants dans la consommation d'énergie. De plus, les composants photoniques au silicium sont très sensibles aux variations de température. Sous une activité de puces donnée, ceci conduit à une réduction de l’efficacité des lasers et à une dérive des longueurs d'onde des composants optiques, ce qui entraîne un «Bit Error Ratio (BER)» plus élevé et réduit par conséquent l'efficacité énergétique des interconnexions optiques. Dans cette thèse, nous travaillons sur des méthodologies de conception pour les interconnexions photoniques sur silicium économes-en-énergie et prenant en compte la topologie / le layout, la variation thermique et l'architectureSilicon photonics is an emerging technology considered as one of the key solutions for future generation on-chip interconnects, providing several prospective advantages such as low transmission latency and high bandwidth. However, it still encounters challenges in energy efficiency. Different topologies, physical layouts, and architectures provide various interconnect options for on-chip communication. This leads to a large variation in optical losses, which is one of the predominant factors in power consumption. In addition, silicon photonic devices are highly sensitive to temperature variation. Under a given chip activity, this leads to a lower laser efficiency and a drift of wavelengths of optical devices (on-chip lasers and microring resonators (MRs)), which in turn results in a higher Bit Error Ratio (BER) and consequently reduces the energy efficiency of optical interconnects. In this thesis, we work on design methodologies for energy-efficient silicon photonic interconnects on chip related to topology/layout, thermal variation, and architecture
5
Hu, Weisheng. "Development of Single-Chip Silicon Photonic Microcantilever Arrays for Sensing Applications." BYU ScholarsArchive, 2011. https://scholarsarchive.byu.edu/etd/2610.
Full textAbstract:
Microcantilever arrays have been shown to be promising label-free nanomechanical sensing devices with high sensitivity. Two factors that affect the usefulness of microcantilevers in sensing scenarios are the sensitivity of the transduction method for measuring changes in microcantilever properties and the ability to create large compact arrays of microcantilevers. In this dissertation, we demonstrate that microcantilevers with an in-plane photonic transduction method are attractive because they maintain the sensitivity of the traditional laser beam reflection method while being scalable to simultaneous readout of large microcantilever arrays. First I demonstrate the integration of a compact waveguide splitter network with in-plane photonic microcantilevers which have amorphous silicon strip loading differential splitter and simultaneous microcantilever readout with an InGaAs line scan camera. A 16-microcantilever array is fabricated and measured. Use of a scaled differential signal yields reasonable correspondence of the signals from 7 surviving released microcantilevers in the array. The average sensitivity is 0.23 µm-1. To improve the sensitivity and consistency, and reduce fabrication difficulties, a new differential splitter design with 4 µm long double-step multimode rib waveguide is introduced. Furthermore, a modified fabrication process is employed to enhance the performance of the device. A new 16-microcanitiler array is designed and fabricated. The sensitivity of a measured 16-microcantilever array is improved to approximately 1 µm-1, which is comparable to the best reported for the laser reflection read out method. Moreover, most of the microcantilevers show excellent uniformity. To demonstrate large scale microcantilever arrays with simultaneous readout using the in-plane photonic transduction method, a 64-microcantilver array is designed, fabricated and measured. Measurement results show that excellent signal uniformiy is obtained for the scaled differential signal of 56 measured microcantilevers in a 64-array. The average sensitivity of the microcantilevers is 0.7 µm-1, and matches simulation results very well.
6
Xia, Zhixuan. "Highly sensitive, multiplexed integrated photonic structures for lab-on-a-chip sensing." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/54848.
Full textAbstract:
The objective of this work is to develop essential building blocks for the lab-on-a-chip optical sensing systems with high performance. In this study, the silicon-on-insulator (SOI) platform is chosen because of its compatibility with the mature microelectronics industry for the great potential in terms of powerful data processing and massive production. Despite the impressing progress in optical sensors based on the silicon photonic technologies, two constant challenges are larger sensitivity and better selectivity. To address the first issue, we incorporate porous materials to the silicon photonics platform. Two porous materials are investigated: porous silicon and porous titania. The demonstrated travelling-wave resonators with the magnesiothermically reacted porous silicon cladding have shown significant enhancement in the sensitivity. The process is then further optimized by replacing the thermal oxide with a flowable oxide for the magnesiothermic reduction. A different approach of making porous silicon using porous anodized alumina membrane leads to better flexibility in controlling the pore size and porosity. Porous titania is successfully integrated with silicon nitride resonators. To improve the selectivity, an array of integrated optical sensors are coated with different polymers, such that each incoming gas analyte has its own signature in the collective response matrix. A multiplexed gas sensor with four polymers has been demonstrated. It also includes on chip references compensating for the adverse environmental effects. On chip spectral analysis is also very critical for lab-on-a-chip sensing systems. For that matter, based on an array of microdonut resonators, we demonstrate an 81 channel microspectrometer. The demonstrated spectrometer leads to a high spectral resolution of 0.6 nm, and a large operating bandwidth of ~ 50 nm.
7
Zanzi, Andrea. "Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects." Doctoral thesis, Universitat Politècnica de València, 2020. http://hdl.handle.net/10251/149377.
Full textAbstract:
[EN] Optical technologies are the backbone of modern communication systems providing
high-speed access to the Internet, efficient inter and intra-data center interconnects
and are expending towards growing research fields and new markets such as satel-
lite communications, LIDARs (Laser Imaging Detection and Ranging) applications,
Neuromorphic computing, and programable photonic circuits, to name a few. Be-
cause of its maturity and low-cost, silicon photonics is being leveraged to allow these
new technologies to reach their full potential.As a result, there is a strong need for
innovative, high-speed and energy-efficient photonic integrated building blocks on
the silicon platform to increase the readiness of silicon photonic integrated circuits.
The work developed and presented in this thesis is focused on the design and char-
acterization of advanced passive and active devices, for photonic integrated circuits.
The thesis consists of three main chapters as well as a motivation and concluding
sections exposing the rationale and the accomplishments of this work. Chapter one
describes the design and characterization of an electro-optical Mach-Zehnder mod-
ulator embedded in highly efficient vertical pn junction exploiting the free-carrier
dispersion effect in the O-band.. Chapter two is devoted to the design and charac-
terization of a novel geometry of asymmetrical multimode interference device and
its implementation in a Mach-Zehnder modulator. Chapter three is dedicated to
the design and characterization of innovative 1-dimensional photonic crystal designs
for slow- lightmodulation applications. An extensive analysis of the main trade-off
arising from the use of slow light is presented.[ES] Las tecnologías ópticas son el eje vertebrador de los sistemas de comunicación mod- ernos que proporcionan acceso de alta velocidad a la Internet, interconexiones efi- cientes entre centros de datos y dentro de ellos. Además, se están expandiendo hacia campos de investigación crecientes y nuevos mercados como son las aplicaciones de comunicaciones por satélite, los LIDAR (Laser Imaging Detection and Ranging), la computación neuromórfica y los circuitos fotónicos programables, por nombrar algunos. La fotónica de silicio está considerada y aceptada ampliamente como una de las tecnologías clave para que dichas aplicaciones puedan desarrollarse. Como resultado, hay una fuerte necesidad de estructuras fotónicas básicas integradas que sean innovadoras, que soporten altas velocidades de transmisión y que sean más eficientes en términos de consumo de potencia, a fin de aumentar la capacidad de los circuitos integrados fotónicos de silicio. El trabajo desarrollado y presentado en esta tesis se centra en el diseño y la car- acterización de dispositivos avanzados pasivos y activos, para circuitos fotónicos integrados. La tesis consta de tres capítulos principales, así como de sendas sec- ciones de motivación y conclusiones que exponen los fundamentos y los logros de este trabajo. El capítulo uno describe el diseño y la caracterización de un modulador electro-óptico Mach-Zehnder incorporado en una unión pn vertical altamente eficien- ciente que explota el efecto de dispersión de plasma en banda O. El capítulo dos está dedicado al diseño y caracterización de una nueva geometría de dispositivo de interferencia multimodo asimétrico y su aplicación en un modulador Mach-Zehnder. El capítulo tres está dedicado al diseño y caracterización de innovadores cristales fotónicos unidimensionales para aplicaciones de modulación con luz lenta. Se pre- senta un amplio análisis de los principales retos derivados del uso de la misma.
[CA] Les tecnologies òptiques són l'eix vertebrador d'aquells sistemes de comunicació moderns que proporcionen accés d'alta velocitat a la Internet, així com intercon- nexions eficients inter i entre centres de dades. A més a més, s'estan expandint cap a camps d'investigació creixents i nous mercats com són les aplicacions de co- municacions per satèl·lit, els LIDAR (Laser Imaging Detection and Ranging), la computació neuromòrfica i els circuits fotònics programables, entre d'altres. La fotònica de silici és considerada i acceptada àmpliament com una de les tecnologies clau i necessàries perquè aquestes aplicacions puguen desenvolupar-se. Per aquest motiu, es fa necessària l'existència d'estructures fotòniques bàsiques integrades que siguen innovadores, que suporten altes velocitats de transmissió i que siguen més eficients en termes de consum de potència, a fi d'augmentar la capacitat dels cir- cuits integrats fotònics de silici. El treball desenvolupat i presentat en aquesta tesi se centra en el disseny i la caracterització de dispositius avançats passius i actius, per a circuits fotònics integrats. La tesi consta de tres capítols principals, així com d'una secció de motivació i una altra de conclusions que exposen els fonaments i els assoliments d'aquest treball. El capítol u descriu el disseny i la caracterització d'un modulador electro-òptic Mach-Zehnder incorporat en una unió pn vertical d'alta efi- ciència que explota l'efecte de dispersió de plasma en la banda O. El capítol dos està dedicat al disseny i caracterització d'una nova geometria de dispositiu d'interferència multimode asimètric així com a la seua aplicació en un modulador Mach-Zehnder. El capítol tres està dedicat al disseny i caracterització d'innovadors cristalls fotònics unidimensionals per a aplicacions de modulació amb llum lenta. S'inclou també una anàlisi detallada dels principals reptes derivats de l'ús d'aquest tipus de llum.
I want to thank you the Generelitat Valenciana and the European Project L3MATRIX for the funding, without them my doctorate would not taken place.
Zanzi, A. (2020). Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/149377
TESIS
8
Hoang, Thi Hong Cam. "Planar slot photonic crystal cavities for on-chip hybrid integration." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS063/document.
Full textAbstract:
Cette thèse est une contribution à la modélisation et à l'étude expérimentale de cavités à cristaux photoniques à fente développées en vue d’un intégration hybride de matériaux actifs sur silicium. Parmi les travaux de conception, nous avons d'abord utilisé la méthodes des ondes planes et la méthode des différences finies (FDTD) pour concevoir une série de cavités SOI à hétérostructures, mécaniquement robustes, infiltrées par des liquides d’indices (n environ 1,5), présentant des longueurs d'onde de résonance dans la gamme des télécommunications (1,3 μm - 1,6 μm), des facteurs de qualité de plusieurs dizaines de milliers, et des volumes modaux proches de 0,03 (lambda/n)3. Nous avons ensuite étudié analytiquement et numériquement le couplage entre une cavité à cristaux photoniques à fente et un guide d'onde à fente par la théorie des modes couplés, complétée par des simulations FDTD, qui ont permis de confirmer la possibilité d'exciter efficacement les modes de fente des cavités à partir d'un guide externe. Enfin, nous avons étudié numériquement et semi-analytiquement des géométries de molécules photoniques constituées de deux cavités à cristaux photoniques à fentes couplées, dont l’écart fréquentiel entre les supermodes a pu être ajusté en amplitude et en signe. Nous avons utilisé une méthode perturbative (« Tight binding ») pour estimer les distributions spatiales des modes des molécules photoniques et prédire leurs fréquences dans plusieurs configurations de cavités à cristaux photoniques à fentes couplées.Ce travail exploratoire a été complété par une partie expérimentale qui a porté sur l'étude d'une famille de cavités de hétérostructure à cristaux photoniques à fente. Les cavités à cœur creux fabriquées ont montré des facteurs de qualité (Q) de plusieurs dizaines de milliers, associés à des volumes modaux de l’ordre de V=0,03 (λ/n)^3 après infiltration de la fente et des trous des structures par des liquides d'indice de réfraction proches de 1,46. Des facteurs Q/V supérieurs à 600 000 et atteignant 1 000 000 dans le meilleur des cas (vers lambda=1,3µm) ont ainsi été observés. Cette phase expérimentale préliminaire a donné ensuite lieu à deux types de développements.Tout d'abord, les propriétés des cavités à cristaux photoniques à fentes ont été étudiées pour des applications en détection d'indice en volume, et testées en utilisant différents liquides d'indice de réfraction compris entre 1,345 à 1,545. Les résonateurs étudiés ont présenté des sensibilités de ~ 235 nm / RIU et des facteur de mérite de détection d'indice de l’ordre de 3700, à l’état de l’art pour des résonateurs silicium intégrés à cœur creux.Dans une autre direction, le potentiel des résonateurs diélectriques à fente a été exploré en vue d’une intégration des matériaux actifs sur silicium. Un polymère dopé aux nanotubes de carbone semiconducteurs a été déposé comme matériau de couverture en vue d’étudier le renforcement de la photoluminescence (PL) des nano-émetteurs sous pompage optique vertical à lambda=740nm. Les expériences conduites ont permis de corréler le renforcement de la PL des nanotubes avec les modes de résonance des cavités et de démontrer le couplage partiel de cette PL vers des guides SOI longs de plusieurs millimètres (collection par la tranche vers lambda=1.3µm), apportant une preuve de principe d’une possible intégration des nanotubes émetteurs en photonique sur siliciumThis Ph.D. work is a contribution to the modeling and the experimental study of slot photonic crystal cavities for hybrid on-silicon integration. Among the design works, we first have used plane the wave expansion and finite-difference time-domain methods to design a series of mechanically robust (non-free membrane) SOI slot photonic crystal heterostructure cavities with resonance wavelengths in the telecommunication range, i.e. from 1.3 µm – 1.6 µm, with Q-factors of around several tens of thousands and mode volumes around 0.03(lambda/n)^3 after being infiltrated by cladding materials with typical index values around 1.5. We have then analytically and numerically studied the coupling between a slot photonic crystal cavity and a slot photonic crystal waveguide by using the coupled mode theory and FDTD simulation. Then we confirmed the ability to excite the cavity slot modes from a waveguide by using FDTD simulation. Finally, as a preliminary step towards the use of several coupled slotted cavities for future hybrid integration schemes, we have numerically and semi-analytically investigated photonic molecules made of two coupled slot photonic crystal cavities providing two different supermodes (bonding and antibonding ones) with controllable wavelength splitting. We successfully employed the tight-binding (TB) approach, which relies on the overlap of the two tightly confined cavity electric fields, to predict the supermodes frequencies and spatial distributions in several coupled slot photonic crystal cavity configurations.This exploratory work was supplemented by an experimental part, which focused on the investigation of a family of slot photonic crystal heterostructure cavities. The fabricated silicon on insulator hollow core cavities showed quality factors of several tens of thousands, i.e. from 18,000 to 31,000 and mode volume V of ~0.03(λ/n)3 after being infiltrated with liquids of ~1.46 refractive index, yielding Q/V ratio larger than 600,000, and reaching 1,000,000 in the best case (at λ ≈ 1.3 μm).This preliminary experimental stage gave rise to two types of additional developments.Firstly, the properties of the studied slot photonic crystal cavities have been investigated for index sensing applications by using different liquids with refractive index values ranging from 1.345 to 1.545. The considered photonic crystal resonators have demonstrated quality factors of several tens of thousands with sensitivities of ~235 nm/RIU and index sensing FOMs around 3,700, i.e. at the state of the art considering hollow core silicon integrated resonators.Secondly, in the view of the integration of active materials on silicon, the potential of these hollow core nanoresonators has been considered to enhance the photo-luminescence (PL) of semiconductor single-walled carbon nanotubes (SWNTs) integrated in thin films deposited on top of silicon. We have brought the first experimental demonstration of SWNTs PL collection (around lambda=1.28 µm) under vertical pumping at short wavelength (lambda=740 nm) from a slotted resonator into millimeter long integrated silicon waveguides, providing a first proof-of-concept step towards nanotube/Si-PhC integration as an active photonic platform. The reported works demonstrate the feasibility of integrating telecommunication wavelength nanotube emitters in silicon photonics as well as emphasize the role of slot photonic crystal cavities for on-chip hybrid integration
9
Koshkinbayeva, Ainur. "New photonic architectures for mid-infrared gaz sensors integrated on silicon." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI019.
Full textAbstract:
Les travaux portent sur les multiplexeurs optiques fonctionnant à mi-IR pour la source à large bande dans l'application de détection de gaz. Deux configurations ont été étudiées: réseau de guides d'onde (AWG) et réseau concave planaire (PCG). Premièrement, le principe du fonctionnement a été compris afin de développer une solution analytique pour le champ de sortie en utilisant une approximation gaussienne du champ et de l'optique de Fourier. Ensuite, un outil de simulation semi-analytique de la réponse spectrale pour les deux configurations de multiplexeur a été développé dans MATLAB. La distribution normale des erreurs de phase a été introduite dans le modèle semi-analytique AWG, ce qui nous a permis d'étudier la corrélation entre l'écart-type des erreurs de phase et le niveau de diaphonie de la réponse spectrale AWG. AWG à 5,65 μm a été fabriqué à partir de la technologie SiGe / Si à l'aide de l'outil MATLAB pour le calcul des paramètres de conception et de l'outil P.Labeye pour le calcul de la géométrie AWG. Les dispositifs avec des paramètres légèrement variables ont été caractérisés: AWG1 avec guides d'ondes de 4,6 μm et MMI de 9 μm; AWG2 avec guides d'ondes de 4,6 μm et MMI de 11 μm; AWG3 avec guides d'ondes de 4,8 μm et MMI de 9 μm. Des mesures des dispositifs sur la puce 36 (centre de la plaquette) et sur la puce 32 (côté de la plaquette) ont été effectuées et analysées. Les mesures de température de AWG2 et AWG3 (puce 32 et puce 36) aux points cinq points de température ont montré une dépendance linéaire du déplacement spectral avec la température qui a une bonne corrélation avec les prédictions de simulationThe work focuses on optical multiplexers operating in mid-IR for broadband source in gas sensing application. Two configurations were studies – arrayed waveguide grating (AWG) and planar concave grating (PCG). First, principle of operation was understood in order to develop analytical solution for output field using Gaussian approximation of the field and Fourier Optics. Then, semi-analytical simulation tool of the spectral response for both multiplexer configurations was developed in MATLAB. Normal distribution of phase errors was introduced to semi-analytical AWG model, which allowed us to study the correlation between standard deviation of phase errors and the level of crosstalk of AWG spectral response. AWG at 5.65 µm was fabricated based on SiGe/Si technology using the MATLAB tool for design parameters calculation and P.Labeye’s tool for AWG geometry calculation. Devices with slightly varying parameters were characterized: AWG1 with 4.6 µm waveguides and 9µm MMI; AWG2 with 4.6 µm waveguides and 11µm MMI; AWG3 with 4.8 µm waveguides and 9µm MMI. Measurements of devices on chip 36 (center of the wafer) and chip 32 (side of the wafer) were performed and analyzed. Temperature measurements of AWG2 and AWG3 (chip 32 and chip 36) at points five temperature points showed linear dependence of spectral shift with the temperature which has a good correlation with simulation predictions
10
Frank, Ian Ward. "Integrated filters for the on-chip silicon photonics platform." Thesis, Harvard University, 2013. http://dissertations.umi.com/gsas.harvard:11205.
Full textAbstract:
We investigate the properties of integrated dielectric filters for the purposes of on-chip routing of photons. We started with the use of high quality factor tunable photonic crystal nanobeam cavities and moving on to examine a new class of reflection based reverse designed filters that maintain the footprint of a waveguide while allowing for arbitrary amplitude and phase response.Engineering and Applied Sciences
Book chapters on the topic "Silicon photonic chip"
1
Zanetto, Francesco. "Low-Noise Mixed-Signal Electronics for Closed-Loop Control of Complex Photonic Circuits." In Special Topics in Information Technology, 55–64. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-85918-3_5.
Full textAbstract:
AbstractAn increasing research effort is being carried out to profit from the advantages of photonics not only in long-range telecommunications but also at short distances, to implement board-to-board or chip-to-chip interconnections. In this context, Silicon Photonics emerged as a promising technology, allowing to integrate optical devices in a small silicon chip. However, the integration density made possible by Silicon Photonics revealed the difficulty of operating complex optical architectures in an open-loop way, due to their high sensitivity to fabrication parameters and temperature variations. In this chapter, a low-noise mixed-signal electronic platform implementing feedback control of complex optical architectures is presented. The system exploits the ContactLess Integrated Photonic Probe, a non-invasive detector that senses light in silicon waveguides by measuring their electrical conductance. The CLIPP readout resolution has been maximized thanks to the design of a low-noise multichannel ASIC, achieving an accuracy better than −35 dBm in light monitoring. The feedback loop to stabilize the behaviour of photonic circuits is then closed in the digital domain by a custom mixed-signal electronic platform. Experimental demonstrations of optical communications at high data-rate confirm the effectiveness of the proposed approach.
2
Rasras, Mahmoud S., and Osama Al Mrayat. "Lab-on-Chip Silicon Photonic Sensor." In The IoT Physical Layer, 83–102. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-93100-5_6.
Full text
3
Thakkar, Ishan G., Sai Vineel Reddy Chittamuru, Varun Bhat, Sairam Sri Vatsavai, and Sudeep Pasricha. "Securing Silicon Photonic NoCs Against Hardware Attacks." In Network-on-Chip Security and Privacy, 399–421. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-69131-8_15.
Full text
4
Nikdast, Mahdi, Gabriela Nicolescu, Jelena Trajkovic, and Odile Liboiron-Ladouceur. "Impact of Fabrication Non-Uniformity on Silicon Photonic Networks-on-Chip." In Photonic Interconnects for Computing Systems, 355–84. New York: River Publishers, 2022. http://dx.doi.org/10.1201/9781003339076-17.
Full text
5
Liao, Ling, Ansheng Liu, Hat Nguyen, Juthika Basak, Mario Paniccia, Yoel Chetrit, and Doron Rubin. "High-Speed Photonic Integrated Chip on a Silicon Platform." In Topics in Applied Physics, 169–86. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10506-7_7.
Full text
6
Clementi, Marco, D. Kapil, F. Gardes, and M. Galli. "On-Chip Nonlinear Optics in Silicon Rich Nitride Photonic Crystal Cavities." In NATO Science for Peace and Security Series B: Physics and Biophysics, 401–2. Dordrecht: Springer Netherlands, 2018. http://dx.doi.org/10.1007/978-94-024-1544-5_32.
Full text
7
Truong, Cao Dung, Duy Nguyen Thi Hang, Hengky Chandrahalim, and Minh Tuan Trinh. "On‑Chip Silicon Photonic Controllable 2 × 2 Four‑Mode Waveguide Switch*." In Handbook of Scholarly Publications from the Air Force Institute of Technology (AFIT), Volume 1, 2000–2020, 513–34. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003220978-32.
Full text
8
Zhixun, Liang, Yi Yunfei, Lin Fang, and Fan Yuanyuan. "Silicon Electro-optic Modulator for Photonic Ring Network On-Chip Based on Dual ITO Layer Directional Coupler." In Proceedings of the 11th International Conference on Computer Engineering and Networks, 903–8. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-6554-7_97.
Full text
9
Scandurra, Alberto. "Silicon Photonics: The System on Chip Perspective." In Topics in Applied Physics, 143–68. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10506-7_6.
Full text
10
Dahiya, Sandeep, Suresh Kumar, and B. K. Kaushik. "Analysis of On Chip Optical Source Vertical Cavity Surface Emitting Laser (VCSEL)." In Silicon Photonics & High Performance Computing, 65–77. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-7656-5_8.
Full textConference papers on the topic "Silicon photonic chip"
1
Lipson, Michal, Sasikanth Manipatruni, Kyle Preston, and Carl Poitras. "Photonics on a Silicon Chip." In ASME 2008 6th International Conference on Nanochannels, Microchannels, and Minichannels. ASMEDC, 2008. http://dx.doi.org/10.1115/icnmm2008-62383.
Full textAbstract:
Photonics on a silicon chip could enable a platform for monolithic integration of optics and microelectronics for applications of optical interconnects in which high data streams are required in a small footprint. In this talk I will review the challenges and achievement in the field of silicon photonics. Using highly confined photonic structures one can enhance the electro-optical and non-linearities properties of Silicon and enable ultra-compact and low power photonic components with very low loss. We have recently demonstrated several active components including GHz electro-optic low power switches and modulators, all-optical amplifiers and wavelength converters on silicon.
2
Bogaerts, Wim, Alain Yuji Takabayashi, Pierre Edinger, Gaehun Jo, Arun Kumar Mallik, Cleituis Antony, Iman Zand, et al. "Programmable Photonic Circuits powered by Silicon Photonic MEMS Technology." In Photonic Networks and Devices. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/networks.2022.nem2c.3.
Full textAbstract:
Programmable photonic chips allow flexible reconfiguration of on-chip optical connections, controlled through electronics and software. We will present the recent progress of such complex photonic circuits powered by silicon photonic MEMS actuators.
3
MacFarlane, Neil, Mingwei Jin, Zhaohui Ma, Yongmeng Sua, Mark A. Foster, Amy C. Foster, and Yuping Huang. "Photon-pair generation in a heterogeneous silicon photonic chip." In CLEO: QELS_Fundamental Science. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_qels.2022.ff4i.7.
Full textAbstract:
We perform photon-pair generation in a heterogeneous multi-layer silicon photonic chip consisting of SiNx and a-Si:H waveguides. Record high CAR value of 1632.6 (± 260.4) is achieved in a-Si:H waveguides from the heterogeneous design.
4
Singh, Anshuman, Michelle Chalupnik, and Mohammad Soltani. "Silicon Photonic Bandpass Filters with Polarization Diversity." In CLEO: Applications and Technology. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_at.2022.jth3a.53.
Full textAbstract:
We demonstrate polarization diverse silicon photonic bandpass filters at telecommunication wavelengths, with high out-of-band rejection (>40 dB), low insertion loss, and lower architecture complexity. Such filters are critical for on-chip wavelength (de)multiplexing in classical/quantum photonics.
5
Kumazaki, Hajime, Yuyang Zhuang, Shun Fujii, Koki Yube, and Takasumi Tanabe. "Silica toroid microcavity coupled to silicon photonic chip." In Frontiers in Optics. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/fio.2019.jtu4a.125.
Full text
6
Liu, Yang, Zheru Qiu, Xinru Ji, Jijun He, Johann Riemensberger, Arslan S. Raja, Rui Ning Wang, Junqiu Liu, and Tobias J. Kippenberg. "Photonic integrated erbium-doped silicon nitride amplifiers with intense net gain." In CLEO: Science and Innovations. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_si.2022.sm4g.4.
Full textAbstract:
We demonstrate photonic integrated erbium-implanted Si3N4 amplifiers that enable record-high 26 dB on-chip net gain and saturation output power exceeding 25 mW, providing an active Si3N4 nanophotonic platform for integrated lasers, LiDARs and mi-crowave photonics.
7
Peserico, Nicola, Hangbo Yang, Xiaoxuan Ma, Shurui Li, Mostafa Hosseini, Jonathan K. George, Puneet Gupta, Chee Wei Wong, and Volker J. Sorger. "Design and Testing of Integrated 4F System into Silicon Photonics Chip for Convolutional Neural Network." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/iprsn.2022.im4b.5.
Full textAbstract:
We present our implementation of a 4F system integrated into a single Silicon Photonic chip to perform the high-speed Convolutional Neural Network by using optical on-chip FFT. We show the Silicon Photonic design, the initial optical response, and the packaging of the 4F chip.
8
Klimov, Nikolai N., Thomas Purdy, and Zeeshan Ahmed. "Chip-Packaged Silicon Photonic Nanoscale Thermometers." In CLEO: Applications and Technology. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/cleo_at.2016.aw1j.6.
Full text
9
Dong, Po. "Reconfigurable silicon photonic networks-on-chip." In 2015 Opto-Electronics and Communications Conference (OECC). IEEE, 2015. http://dx.doi.org/10.1109/oecc.2015.7340233.
Full text
10
Xiong, Chi, Yves Martin, Eric J. Zhang, Jason S. Orcutt, Martin Glodde, Laurent Schares, Tymon Barwicz, Chu C. Teng, Gerard Wysocki, and William M. J. Green. "Silicon photonic integrated circuit for on-chip spectroscopic gas sensing." In Silicon Photonics XIV, edited by Graham T. Reed and Andrew P. Knights. SPIE, 2019. http://dx.doi.org/10.1117/12.2511793.
Full textReports on the topic "Silicon photonic chip"
1
Jiang, Wei C., Xiyuan Lu, Jidong Zhang, Oskar Painter, and Qiang Lin. A Silicon-Chip Source of Bright Photon-Pair Comb. Fort Belvoir, VA: Defense Technical Information Center, October 2012. http://dx.doi.org/10.21236/ada584017.
Full text
2
Sun, Greg, and Richard Soref. The Longwave Silicon Chip - Integrated Plasma-Photonics in Group IV And III-V Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, October 2013. http://dx.doi.org/10.21236/ada590105.
Full text