Journal articles: 'Silicon photodetector'

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Zhao, Jijie, Huan Liu, Lier Deng, Minyu Bai, Fei Xie, Shuai Wen, and Weiguo Liu. "High Quantum Efficiency and Broadband Photodetector Based on Graphene/Silicon Nanometer Truncated Cone Arrays." Sensors 21, no. 18 (September 13, 2021): 6146. http://dx.doi.org/10.3390/s21186146.

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Light loss is one of the main factors affecting the quantum efficiency of photodetectors. Many researchers have attempted to use various methods to improve the quantum efficiency of silicon-based photodetectors. Herein, we designed highly anti-reflective silicon nanometer truncated cone arrays (Si NTCAs) as a light-trapping layer in combination with graphene to construct a high-performance graphene/Si NTCAs photodetector. This heterojunction structure overcomes the weak light absorption and severe surface recombination in traditional silicon-based photodetectors. At the same time, graphene can be used both as a broad-spectrum absorption layer and as a transparent electrode to improve the response speed of heterojunction devices. Due to these two mechanisms, this photodetector had a high quantum efficiency of 97% at a wavelength of 780 nm and a short rise/fall time of 60/105µs. This device design promotes the development of silicon-based photodetectors and provides new possibilities for integrated photoelectric systems.

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Wang, Fangjie, Xiaoxu Chen, Sikun Zhou, Qiongqiong Gu, Hao Zhou, Guoliang Deng, and Shouhuan Zhou. "An on-chip integrated microfiber–silicon–graphene hybrid structure photodetector." Laser Physics 31, no. 12 (November 12, 2021): 126207. http://dx.doi.org/10.1088/1555-6611/ac3245.

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Abstract Silicon photonic devices have great potential for photocommunication, and silicon-based photodetectors have attracted wide attention. Here, we report an on-chip integrated microfiber–silicon–graphene hybrid structure photodetector that can operate in the visible and near-infrared ranges. The detector has a responsivity of ∼136 mA W−1 at 808 nm and a rise time of ∼1.1 μs. At a reverse bias of 5 V, we achieved a responsivity of ∼1350 mA W−1. Our device provides an option for on-chip integration.

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Zhang, Lijian, Weikang Lu, Ruijie Qian, Hengliang Wang, Hongtao Xu, Liping Zhu, and Zhenghua An. "Highly responsive silicon-based hot-electron photodetector with self-aligned metamaterial interdigital electrodes." Applied Physics Letters 122, no. 3 (January 16, 2023): 031101. http://dx.doi.org/10.1063/5.0133705.

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A sensitive silicon-based hot-electron photodetector based on a self-aligned metal–semiconductor–metal junction is developed. Nearly perfect absorption is achieved with the metamaterial optical coupling, whereas the absorption difference between the upper and lower interdigital gratings is as large as 70% near the resonant wavelength. Arising from the asymmetric photo-absorption, the measured responsivity values of the self-aligned interdigital grating devices reach 1.89 and 0.78 mA/W under zero biasing conditions at the wavelengths of 1310 and 1550 nm, respectively. These values approach the reported record photo-responsivity of hot-electron photodetectors with conventional metal–semiconductor junctions. In addition, the indication of polarity-switchable photocurrent appears due to the wavelength-dependent absorption of the upper and lower metal interdigital gratings. Our device, combining the self-aligned metamaterial interdigital electrodes with highly asymmetric absorption, shows prospects for applications in photodetection, photovoltaics, integrated optoelectronics, and optical communications.

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Rogalski, Antoni, Piotr Martyniuk, Malgorzata Kopytko, Pawel Madejczyk, and Sanjay Krishna. "InAsSb-Based Infrared Photodetectors: Thirty Years Later On." Sensors 20, no. 24 (December 9, 2020): 7047. http://dx.doi.org/10.3390/s20247047.

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In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

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Huang, Zhihong, James E. Carey, Mingguo Liu, Xiangyi Guo, Eric Mazur, and Joe C. Campbell. "Microstructured silicon photodetector." Applied Physics Letters 89, no. 3 (July 17, 2006): 033506. http://dx.doi.org/10.1063/1.2227629.

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Hawkins, Aaron R., Thomas E. Reynolds, Derek R. England, Dubravko I. Babic, Mark J. Mondry, Klaus Streubel, and John E. Bowers. "Silicon heterointerface photodetector." Applied Physics Letters 68, no. 26 (June 24, 1996): 3692–94. http://dx.doi.org/10.1063/1.115975.

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Das, K., S. Mukherjee, S. Manna, S. K. Ray, and A. K. Raychaudhuri. "Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity." Nanoscale 6, no. 19 (2014): 11232–39. http://dx.doi.org/10.1039/c4nr03170a.

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Single silicon nanowire-based MSM photodetectors show ultra high responsivity (>10⁴ A W⁻¹) in the near-infra-red region, even at zero bias. The observed photoresponse is sensitive to the polarization of the exciting light, allowing the device to act as a polarization-dependent photodetector.

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Seo, Seung Gi, Jae Hyeon Ryu, Seung Yeob Kim, Jinheon Jeong, and Sung Hun Jin. "Enhancement of Photodetective Properties on Multilayered MoS2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors." Nanomaterials 11, no. 6 (June 17, 2021): 1586. http://dx.doi.org/10.3390/nano11061586.

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Photodetectors and display backplane transistors based on molybdenum disulfide (MoS2) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS2 photodetector itself or emerging applications. In this study, to suggest a better insight into the photodetector performances of MoS2 thin film transistors (TFTs), as photosensors for possible integrated system, we performed a comparative study on the photoresponse of MoS2 and hydrogenated amorphous silicon (a-Si:H) TFTs. As a result, in the various wavelengths and optical power ranges, MoS2 TFTs exhibit 2~4 orders larger photo responsivities and detectivities. The overall quantitative comparison of photoresponse in single device and inverters confirms a much better performance by the MoS2 photodetectors. Furthermore, as a strategy to improve the field effect mobility and photoresponse of the MoS2 TFTs, molecular doping via poly-L-lysine (PLL) treatment was applied to the MoS2 TFTs. Transfer and output characteristics of the MoS2 TFTs clearly show improved photocurrent generation under a wide range of illuminations (740~365 nm). These results provide useful insights for considering MoS2 as a next-generation photodetector in flat panel displays and makes it more attractive due to the fact of its potential as a high-performance photodetector enabled by a novel doping technique.

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SHING, CHRISTOPHER, LIQIAO QIN, and SHALYA SAWYER. "BIO-SENSING SENSITIVITY OF A NANOPARTICLE BASED ULTRAVIOLET PHOTODETECTOR." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 505–13. http://dx.doi.org/10.1142/s0129156411006799.

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Bio-sensing sensitivity of a spectrally selective nanoparticle based ultraviolet (UV) photodetector is characterized in comparison to a silicon photodiode and a photomultiplier tube (PMT). The nanoparticle based photodetector is comprised of poly-vinyl alcohol (PVA) coated zinc-oxide ( ZnO ) nanoparticles deposited on an aluminum-gallium-nitride ( AlGaN ) epitaxially grown substrate. The sensitivity was determined by measuring the fluorescence intensity of the native fluorophore, tryptophan, in Escherichia coli (E-coli, ATCC-25922) cells. Tryptophan intrinsically fluoresces with a peak at 340 nm under 280 nm UV light illumination. It is shown that this detector can sense the concentration of E-coli to 2.5 × 108 cfu/mL while the silicon photodiode cannot detect the intrinsic fluorescence at all. Nevertheless, the PMT outperformed the ZnO nanoparticle- AlGaN substrate based photodetector with the ability to sense E-coli concentrations to 3.91 × 106 cfu/mL. However, because PMT based systems are commonly limited by high dark current, susceptible to environmental changes, sensitive to ambient light, are not spectrally selective and have high power consumption, biological detection systems comprised of these ZnO nanoparticle- AlGaN substrate based photodetectors can be more effective for near real time characterization of potential bacterial contamination.

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Ozsahin, I., B. Uzun, and D. U. Ozsahin. "Selection of photodetectors in nuclear medical imaging using MCDM methods." Journal of Instrumentation 17, no. 06 (June 1, 2022): C06003. http://dx.doi.org/10.1088/1748-0221/17/06/c06003.

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Abstract Photodetectors used in nuclear medical imaging such as single photon emission computed tomography (SPECT) and positron emission tomography (PET) are an important element of radiation detection systems. Selecting the photodetector depends on many physical criteria including quantum efficiency (QE) and gain. The aim of this study is to apply multi-criteria decision-making (MCDM) methods to determine the optimum photodetector based on the evaluation and comparison of complex and multiple criteria. The photodetectors investigated in this study are photomultiplier tube (PMT), avalanche photodiode (APD) and silicon photomultiplier (SiPM). The bias voltage, gain, rise time, and QE were selected since they are considered as the key criteria for the photodetectors. Then, the corresponding values of each criteria were defined and preferred weights were assigned to each criteria based on the desired outcome. The fuzzy preference ranking organization method for enrichment of evaluations (PROMETHEE) and fuzzy technique for order of preference by similarity to ideal solution (TOPSIS) methods were used to evaluate the alternatives. The results showed that conventional PMT came first in the ranking, followed by SiPM, while APD was the least desirable photodetector according to the fuzzy PROMETHEE and fuzzy TOPSIS methods based on the selected criteria and assigned weights. MCDM methods were used to select photodetectors used in PET and SPECT systems. One can incorporate as many alternatives and criteria as needed and assign the weights accordingly.

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Liu, Hao, and Junhong Yang. "Research on Photoelectric Detection Performance Based on Pb Se Quantum Dots." Journal of Physics: Conference Series 2290, no. 1 (June 1, 2022): 012047. http://dx.doi.org/10.1088/1742-6596/2290/1/012047.

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Abstract Quantum dot materials have the advantages of low cost, wide spectral response and good photostability, and are widely used in optoelectronic fields such as light-emitting diodes and photodetectors. Quantum dots are the key materials for the next generation of new semiconductor optoelectronic devices. The direct integration of nano-quantum dots with silicon-based materials can simplify the fabrication process of optoelectronic devices. The environmental stability of lead selenide (PbSe) quantum dots is poorer than that of lead sulfide (PbS) quantum dots, which limits its application in optoelectronic devices. In this paper, we combine lead selenide quantum dots with silicon-based photovoltaic junction field effect transistors, and introduce halides in the synthesis process to improve the stability of quantum dots in air. We analyze and study the performance of this new type of near-infrared quantum dot photodetector, and study the influence of factors such as channel area and quantum dot size on the performance of the detector, which provides ideas for further optimizing the photodetection performance.

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Lin, Guochen, Yue Zhao, Kai Yu, Jun Zheng, Xiaoming Zhang, Shuai Feng, and Chuanbo Li. "Enormous Increases in Swir Detection for Gesn Strips Detector with Graphene Hybrid Structure." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1220. http://dx.doi.org/10.1149/ma2022-02321220mtgabs.

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GeSn materials with tunable bandgaps covering the full shortwave infrared (SWIR) band from 1 to 2.6 μm present a new paradigm for silicon-based SWIR photodetection. However, crystalline quality remains a major limitation for the realization of high-performance photodetectors owing to the large lattice, thermal expansion coefficient mismatching, and Sn segregation. Here, the Sn self-catalyzed growth of lateral GeSn strips on Si(111) substrates by MBE is investigated. These GeSn strips are defect-free by relaxing the large lattice mismatch and introducing (111)-parallel planar dislocations at the GeSn/Si interface. A graphene-GeSn strip hybrid structure photodetector is fabricated, which shows more than 3000 times enhancement in photocurrent and an apparent improvement in temporal response compared with the detector without graphene. A high responsivity of 1.23 A/W and 1.08 A/W at 1310 nm and 1550 nm are achieved, respectively. This work presents a new approach for micro-scale but high crystal quality material in the integration on a silicon-based platform and shows future applications in the SWIR field.

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Tallur, Siddharth, and Sunil A. Bhave. "A Silicon Electromechanical Photodetector." Nano Letters 13, no. 6 (May 29, 2013): 2760–65. http://dx.doi.org/10.1021/nl400980u.

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Garcia, J. P., and E. L. Dereniak. "Extrinsic silicon photodetector characterization." Applied Optics 29, no. 4 (February 1, 1990): 559. http://dx.doi.org/10.1364/ao.29.000559.

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Thahe, Asad A., Motahher A. Qaeed, Suhail Najm Abdullah, Ibrahim M. Badawy, Hasan Alqaraghuli, Yasser Saleh Mustafa Alajerami, A. Mindil, and Ammar AL-Farga. "Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio." Journal of Nanomaterials 2023 (April 26, 2023): 1–11. http://dx.doi.org/10.1155/2023/6576028.

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Despite several attempts to enhance the electrical and charge carrier transport characteristics of porous silicon (PSi), the requisite conditions for optimally synthesizing n-PSi with appealing optoelectronic properties are yet to be achieved. Therefore, this research explores the effect of the chemical ratio of precursor materials (HF:C2H6O:H2O2) on the surface morphology, crystalline structure, and optical and electric properties of PSi. The PSi was produced by photoelectrochemical etching followed by anodization of the n-type Si under light illumination. The properties of the as-prepared PSi were studied by means of microscopic and spectroscopic techniques. The HF:C2H6O:H2O2 chemical ratio was optimized at 2 : 1 : 1. A metal–semiconductor–metal (MSM) ultraviolet photodetector (Pt/n-PSi/Pt) was fabricated, which exhibited high performances under UV light (365 nm) illumination. The photodetector was shown to be highly stable and reliable with a rapid rise time of 0.56 s at a bias voltage of +5 V. The MSM photodetector displayed responsivity (Rp) of 9.17 A/m at 365 nm, which significantly exceeds the values reported for TiC/porous Si/Si in some contemporary research. The photodetector fabricated from n-PSi, synthesized at an optimum chemical ratio (2 : 1 : 1) exhibited the best photodetection performance, possibly due to the high porosity and defect-free state of the n-PSi thin films.

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Zhang, Xiao-Mei, Sian-Hong Tseng, and Ming-Yen Lu. "Large-Area Ultraviolet Photodetectors Based on p-Type Multilayer MoS2 Enabled by Plasma Doping." Applied Sciences 9, no. 6 (March 15, 2019): 1110. http://dx.doi.org/10.3390/app9061110.

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Two-dimensional (2D) MoS2 has recently become of interest for applications in broad range photodetection due to their tunable bandgap. In order to develop 2D MoS2 photodetectors with ultrafast response and high responsivity, up-scalable techniques for realizing controlled p-type doping in MoS2 is necessary. In this paper, we demonstrate a p-type multilayer MoS2 photodetector with selective-area doping using CHF3 plasma treatment. Microscopic and spectroscopic characterization techniques, including atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), are used to investigate the morphological and electrical modification of the p-type doped MoS2 surface after CHF3 plasma treatment. Back-gated p-type MoS2 field-effect transistors (FETs) are fabricated with an on/off current ratio in the order of 103 and a field-effect mobility of 65.2 cm2V−1s−1. They exhibit gate-modulated ultraviolet photodetection with a rapid response time of 37 ms. This study provides a promising approach for the development of mild plasma-doped MoS2 as a 2D material in post-silicon electronic and optoelectronic device applications.

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Dehzangi, Arash, Donghai Wu, Ryan McClintock, Jiakai Li, Alexander Jaud, and Manijeh Razeghi. "Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation." Photonics 7, no. 3 (September 3, 2020): 68. http://dx.doi.org/10.3390/photonics7030068.

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In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W.

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Yu, Hong, Chenggui Gao, Jiang Zou, Wensheng Yang, and Quan Xie. "Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg2Si/Si Heterojunction Photodetector." Photonics 8, no. 11 (November 11, 2021): 509. http://dx.doi.org/10.3390/photonics8110509.

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To develop and design an environmentally friendly, low-cost shortwave infrared (SWIR) photodetector (PD) material and extend the optical response cutoff wavelengths of existing silicon photodetectors beyond 1100 nm, high-performance silicon-compatible Mg2Si/Si PDs are required. First, the structural model of the Mg2Si/Si heterojunction was established using the Silvaco Atlas module. Second, the effects of the doping concentrations of Mg2Si and Si on the photoelectric properties of the Mg2Si/Si heterojunction PD, including the energy band, breakdown voltage, dark current, forward conduction voltage, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on/off ratio, response time, and recovery time, were simulated. At different doping concentrations, the heterojunction energy band shifted, and a peak barrier appeared at the conduction band of the Mg2Si/Si heterojunction interface. When the doping concentrations of Si and Mg2Si layer were 1017, and 1016 cm−3, respectively, the Mg2Si/Si heterojunction PD could obtain optimal photoelectric properties. Under these conditions, the maximum EQE was 70.68% at 800 nm, the maximum responsivity was 0.51 A/W at 1000 nm, the minimum NEP was 7.07 × 10−11 WHz–1/2 at 1000 nm, the maximum detectivity was 1.4 × 1010 Jones at 1000 nm, and the maximum on/off ratio was 141.45 at 1000 nm. The simulation and optimization result also showed that the Mg2Si/Si heterojunction PD could be used for visible and SWIR photodetection in the wavelength range from 400 to 1500 nm. The results also provide technical support for the future preparation of eco-friendly heterojunction photodetectors.

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ATIWONGSANGTHONG, N., S. NIEMCHAROEN, and W. TITIROONGRUANG. "NANOPOROUS SILICON METAL-SEMICONDUCTOR-METAL PHOTODETECTOR." Journal of Nonlinear Optical Physics & Materials 19, no. 04 (December 2010): 713–21. http://dx.doi.org/10.1142/s0218863510005637.

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In this paper we present a study on the application of nanoporous silicon to an optoelectronic device called a nanoporous silicon metal-semiconductor-metal (MSM) visible light photodetector. This device was fabricated on a nanoporous silicon layer which was formed by electrochemical etching of a silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The structure of this device has two square Al /nanoporous silicon Schottky-barrier junctions on the silicon substrate and the electrode spacing is 500 μm. The experiment will study photoresponse and the response time of a nanoporous silicon MSM photodetector which was fabricated on the various porosity of a nanoporous silicon layer. It is found that when devices are fabricated on a higher porosity nanoporous silicon layer, the photoresponse of the device will expand toward the short-wavelength and the bandwidth of the spectrum response will cover visible light. In addition, it is found that the response time of the device in terms of rise time will decrease.

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Hernández-Betanzos, Joaquín, Mariano Aceves-Mijares, and Alfredo Abelardo González-Fernández. "Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector." Applied Sciences 12, no. 3 (January 25, 2022): 1264. http://dx.doi.org/10.3390/app12031264.

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This work presents a novel integrable silicon photodetector which can only be conceived as part of a monolithic electrophotonic basic structure formed of a silicon light emitter, waveguide and light detector. That is, it cannot operate as a single electronic or photonic device. The detector presents current gain, and photons reach the depletion region straightforward, allowing the detection of low power light produced by silicon light sources currently in use, which is difficult for existing photodetectors. The waveguide core is made of silicon nitride, and it is simultaneously the insulator in a MOS-like device. The light detection unit is intended for novel seamless electrophotonic platforms, and it is called wavesensor. In spite that the device is a MOS-like structure, it is not a MOSFET neither a lateral bipolar transistor, and one of the main differences with the former is that this is a bulk device working in Punch-Through regime. Being a MOS-like structure, it is fully compatible with standard microelectronics technology. A development of the mathematics involved in its operation is carried out in order to understand the physics of the detector, showing a gain factor in the photocurrent. Computer simulations of the fabrication process and photoelectric response of the device confirmed photocurrent values higher than the expected for a photodiode with efficiency = 1, thus demonstrating a new integrable photodetector with gain, capable of detecting light in the range of nW for electrophotonic applications.

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Li, Xinxin, Zhen Deng, Ziguang Ma, Yang Jiang, Chunhua Du, Haiqiang Jia, Wenxin Wang, and Hong Chen. "Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure." Sensors 22, no. 12 (June 16, 2022): 4536. http://dx.doi.org/10.3390/s22124536.

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Plasmonic photodetection based on the hot-electron generation in nanostructures is a promising strategy for sub-band detection due to the high conversion efficiencies; however, it is plagued with the high dark current. In this paper, we have demonstrated the plasmonic photodetection with dark current suppression to create a Si-based broadband photodetector with enhanced performance in the short-wavelength infrared (SWIR) region. By hybridizing a 3 nm Au layer with the spherical Au nanoparticles (NPs) formed by rapid thermal annealing (RTA) on Si substrate, a well-behaved ITO/Au/Au NPs/n-Si Schottky photodetector with suppressed dark current and enhanced absorption in the SWIR region is obtained. This optimized detector shows a broad detection beyond 1200 nm and a high responsivity of 22.82 mA/W at 1310 nm at −1 V, as well as a low dark current density on the order of 10−5 A/cm2. Such a Si-based plasmon-enhanced detector with desirable performance in dark current will be a promising strategy for realization of the high SNR detector while keeping fabrication costs low.

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Nararug, Budsara, Surada Ueamanapong, Itsara Srithanachai, Supakorn Janprapha, Ai Lada Suwanchatree, Surasak Niemcharoen, Rangson Muanghlua, and Nipapan Klunngien. "Light-Response Characteristics of Platinum Doped Silicon Photodetector." Advanced Materials Research 811 (September 2013): 196–99. http://dx.doi.org/10.4028/www.scientific.net/amr.811.196.

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The purposeof this research article is present electrical characteristic of Pt-doped silicon photodetector compare with undoped silicon photodetector. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Pt-doped detector were investigated. In this experiment, the results of Pt-doped detector show that the dark currentisobviously decreased and the photocurrent is decreased about 9 to 10 orders. Furthermore, the capacitance characteristic isslightly increased about 0.15 pF. The effects platinum on silicon indicated the carrier in silicon have been changed.

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Гаврушко, В. В., А. С. Ионов, О. Р. Кадриев, and В. А. Ласткин. "Кремниевые дифференциальные фотоприемники. Технология, характеристики, применение." Журнал технической физики 93, no. 9 (2023): 1353. http://dx.doi.org/10.21883/jtf.2023.09.56223.136o-23.

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A silicon-based photodetector containing two identical n+-p photodiodes is described. One of the photodiodes had a wide spectral response with high sensitivity in the ultraviolet region. The sensitivity of the second was reduced in the short-wavelength part of the spectrum by creating additional recombination centers in the near-surface region by implanting As ions. The spectral sensitivity of the differential signal obtained by subtracting photocurrents had a pronounced short-wavelength characteristic. The long-wavelength limit of the spectral range in terms of the λ0.5 level, depending on the doping dose, was in the range of 0.37 — 0.47 μm. The sensitivity maximum corresponded to λmax=0.32 — 0.37 μm. The electrical and noise characteristics of the photodetector are given. The possibility of using differential photodetectors as two-color ones is shown.

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Shen, Yuheng, Yulin Li, Wencheng Chen, Sijie Jiang, Cheng Li, and Qijin Cheng. "High-Performance Graphene Nanowalls/Si Self-Powered Photodetectors with HfO2 as an Interfacial Layer." Nanomaterials 13, no. 10 (May 19, 2023): 1681. http://dx.doi.org/10.3390/nano13101681.

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Graphene/silicon (Si) heterojunction photodetectors are widely studied in detecting of optical signals from near-infrared to visible light. However, the performance of graphene/Si photodetectors is limited by defects created in the growth process and surface recombination at the interface. Herein, a remote plasma-enhanced chemical vapor deposition is introduced to directly grow graphene nanowalls (GNWs) at a low power of 300 W, which can effectively improve the growth rate and reduce defects. Moreover, hafnium oxide (HfO2) with thicknesses ranging from 1 to 5 nm grown by atomic layer deposition has been employed as an interfacial layer for the GNWs/Si heterojunction photodetector. It is shown that the high-k dielectric layer of HfO2 acts as an electron-blocking and hole transport layer, which minimizes the recombination and reduces the dark current. At an optimized thickness of 3 nm HfO2, a low dark current of 3.85 × 10−10, with a responsivity of 0.19 AW−1, a specific detectivity of 1.38 × 1012 as well as an external quantum efficiency of 47.1% at zero bias, can be obtained for the fabricated GNWs/HfO2/Si photodetector. This work demonstrates a universal strategy to fabricate high-performance graphene/Si photodetectors.

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Yan, Siqi, Ze Zhang, Weiqin Wang, Ziwen Zhou, Wenyi Peng, Yifan Zeng, Yuqin Yuan, et al. "Photodetector Based on Twisted Bilayer Graphene/Silicon Hybrid Slot Waveguide with High Responsivity and Large Bandwidth." Photonics 9, no. 11 (November 17, 2022): 867. http://dx.doi.org/10.3390/photonics9110867.

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Graphene/silicon hybrid photodetector operating at communication wavelength has attracted enormous attention recently due to its potential to realize bandwidth larger than 100 GHz. However, the responsivity is intrinsically limited by the low absorption from the atomic-thick graphene monolayer, which imposes significant obstacles towards its practical application. Although plasmonic structures has been widely applied to enhance the responsivity, it may induce the metallic absorption thus limit the responsivity lower than 0.6 A/W. Twisted bilayer graphene (TBG) has been reported to hold the ability to dramatically enhance the optical absorption due to the unique twist-angle-dependent van Hove singularities. In this article, we present a design of a silicon/TBG hybrid photodetector with a responsivity higher than 1 A/W and bandwidth exceeding 100 GHz. The enhanced responsivity is achieved by tuning the twisted angle of TBG to increase the absorption within the 1550 nm as well as utilizing the silicon slot waveguide to boost the mode overlap with TBG. The fabrication process of proposed design is also discussed demonstrating the advantages of low fabrication complexity. The proposed silicon/TBG photodetector could not only exhibit superior performance compared to previously reported silicon/monolayer graphene photodetector, but also pave the way for the practical application of graphene-based silicon optoelectronic devices.

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Huang, Li, Xu, Liu, Luo, Zhang, Nie, et al. "A Bilayer 2D-WS2/Organic-Based Heterojunction for High-Performance Photodetectors." Nanomaterials 9, no. 9 (September 13, 2019): 1312. http://dx.doi.org/10.3390/nano9091312.

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Two-dimensional (2D) tungsten disulfide (WS2) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors. However, chemical vapor deposition (CVD) grown 2D WS2 domains with the coexistence of a discontinuous single layer and multilayers are still not suitable for the fabrication of photodetectors on a large scale. An emerging field in the integration of organic materials with 2D materials offers the advantages of molecular diversity and flexibility to provide an exciting aspect on high-performance device applications. Herein, we fabricated a photodetector based on a 2D-WS2/organic semiconductor materials (mixture of the (Poly-(N, N'-bis-4-butylphenyl-N, N'-bisphenyl) benzidine and Phenyl-C61-butyric acid methyl ester (Poly-TPD/PCBM)) heterojunction. The application of Poly-TPD/PCBM organic blend film enhanced light absorption, electrically connected the isolated WS2 domains, and promoted the separation of electron-hole pairs. The generated exciton could sufficiently diffuse to the interface of the WS2 and the organic blend layers for efficient charge separation, where Poly-TPD was favorable for hole carrier transport and PCBM for electron transport to their respective electrodes. We show that the photodetector exhibited high responsivity, detectivity, and an on/off ratio of 0.1 A/W, 1.1 × 1011 Jones, and 100, respectively. In addition, the photodetector showed a broad spectral response from 500 nm to 750 nm, with a peak external quantum efficiency (EQE) of 8%. Our work offers a facile solution-coating process combined with a CVD technique to prepare an inorganic/organic heterojunction photodetector with high performance on silicon substrate.

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Gavrushko, V. V., A. S. Ionov, O. R. Kadriev, and V. A. Lastkin. "Silicon-based shortwave differential photodetector." Technical Physics 62, no. 2 (February 2017): 338–40. http://dx.doi.org/10.1134/s1063784217020104.

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Garcia, J. P., and E. L. Dereniak. "Extrinsic silicon photodetector characterization: errata." Applied Optics 29, no. 19 (July 1, 1990): 2838. http://dx.doi.org/10.1364/ao.29.002838.

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Tsai, Shang Yu, Ching-Chang Lin, Cheng-Tang Yu, Yen-Shuo Chen, Wei-Lin Wu, Yu-Cheng Chang, Chun Chi Chen, and Fu-Hsiang Ko. "Screen-Printable Silver Paste Material for Semitransparent and Flexible Metal–Semiconductor–Metal Photodetectors with Liquid-Phase Procedure." Nanomaterials 12, no. 14 (July 15, 2022): 2428. http://dx.doi.org/10.3390/nano12142428.

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Photodetectors are widely applied in modern industrial fields because they convert light energy into electrical signals. We propose a printable silver (Ag) paste electrode for a highly flexible metal–semiconductor–metal (MSM) broadband visible light photodetector as a wearable and portable device. Single-crystal and surface-textured silicon substrates with thicknesses of 37.21 μm were fabricated using a wet etching process. Surface texturization on flexible Si substrates enhances the light-trapping effect and minimizes reflectance from the incident light, and the average reflectance is reduced by 16.3% with pyramid-like structures. In this study, semitransparent, conductive Ag paste electrodes were manufactured using a screen-printing with liquid-phase process to form a flexible MSM broadband visible light photodetector. The transmittance of the homemade Ag paste solution fell between 34.83% and 36.98% in the wavelength range of visible light, from 400 nm to 800 nm. The highest visible light photosensitivity was 1.75 × 104 at 19.5 W/m2. The photocurrents of the flexible MSM broadband visible light photodetector were slightly changed under concave and convex conditions, displaying stable and durable bending properties.

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Thompson, Jesse E., Darian Smalley, and Masahiro Ishigami. "Solar-Blind Ultraviolet Photodetectors Based on Vertical Graphene-Hexagonal Boron Nitride Heterostructures." MRS Advances 5, no. 37-38 (2020): 1993–2002. http://dx.doi.org/10.1557/adv.2020.331.

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AbstractPhotodetectors operating in the ultraviolet (UV) play a pivotal role in applications such as ozone monitoring and biosensing. One key factor to successfully implementing such photodetectors is that they must be solar-blind to avoid detecting ambient visible and infrared light. Unfortunately, UV photodetectors based on silicon and other typical semiconductors are not natively solar-blind, since their band gap energies are in the visible range. Hexagonal boron nitride (h-BN) is an example of a wide band gap semiconductor which shows promise for use as the absorbing medium in a UV photodetector device, since its band gap is wide enough to make it inherently insensitive to light in the visible range and above. Here we report on the fabrication and characterization of a graphene-h-BN-heterostructure photodetector which utilizes a vertical geometry, in principle allowing for highly scalable production. We find that our device shows a finite photoresponse to illumination by a 254 nm light source, but not to a 365 nm source, thus suggesting that our device is solar-blind.

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Sundararaju, Umahwathy, Muhammad Aniq Shazni Mohammad Haniff, Pin Jern Ker, and P. Susthitha Menon. "MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review." Materials 14, no. 7 (March 29, 2021): 1672. http://dx.doi.org/10.3390/ma14071672.

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A photodetector converts optical signals to detectable electrical signals. Lately, self-powered photodetectors have been widely studied because of their advantages in device miniaturization and low power consumption, which make them preferable in various applications, especially those related to green technology and flexible electronics. Since self-powered photodetectors do not have an external power supply at zero bias, it is important to ensure that the built-in potential in the device produces a sufficiently thick depletion region that efficiently sweeps the carriers across the junction, resulting in detectable electrical signals even at very low-optical power signals. Therefore, two-dimensional (2D) materials are explored as an alternative to silicon-based active regions in the photodetector. In addition, plasmonic effects coupled with self-powered photodetectors will further enhance light absorption and scattering, which contribute to the improvement of the device’s photocurrent generation. Hence, this review focuses on the employment of 2D materials such as graphene and molybdenum disulfide (MoS2) with the insertion of hexagonal boron nitride (h-BN) and plasmonic nanoparticles. All these approaches have shown performance improvement of photodetectors for self-powering applications. A comprehensive analysis encompassing 2D material characterization, theoretical and numerical modelling, device physics, fabrication and characterization of photodetectors with graphene/MoS2 and graphene/h-BN/MoS2 heterostructures with plasmonic effect is presented with potential leads to new research opportunities.

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Wang, Yi, Yaoqiang Zhou, Zunyue Zhang, Shuqi Xiao, Jian-bin Xu, and Hon Ki Tsang. "40 GHz waveguide-integrated two-dimensional palladium diselenide photodetectors." Applied Physics Letters 120, no. 23 (June 6, 2022): 231102. http://dx.doi.org/10.1063/5.0091625.

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Hybrid integration of two-dimensional (2D) materials with photonic integrated circuits can enable additional functionality in planar waveguides based on excellent optical and electrical properties of 2D materials. 2D layered palladium diselenide (PdSe2) has a narrow energy bandgap and high carrier mobility, and its stability under normal laboratory environment conditions makes it of interest for use as high-performance infrared photodetectors. In this work, we propose and experimentally demonstrate a high-speed waveguide-integrated photodetector which uses chemical vapor deposition grown PdSe2 transferred onto a silicon waveguide. At 1550 nm wavelength, the photodetector can be operated without external bias with a responsivity of 0.57 mA/W and a responsivity of 20 mA/W at 6 V bias voltage. The detector had an impulse response full-width-half-maximum pulse width of about 11 ps, corresponding to a 3-dB bandwidth of 40 GHz.

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Long Ang, Thomas Yong, Jun Rong Ong, Ray Jia Hong Ng, Soon Thor Lim, Trevor Rei Lee, Victor Leong, Salih Yanikgonul, et al. "Towards Integrated Single Photon Avalanche Detectors for Visible Light (Invited)." EPJ Web of Conferences 266 (2022): 01001. http://dx.doi.org/10.1051/epjconf/202226601001.

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Integrated avalanche photodetectors (APDs) are essential and ubiquitous devices in quantum photonics applications. While free-space APDs are a mature technology, the development of integrated APDs for visible light is still in its infancy. In this invited talk, we review our work on integrated photodetectors – the Germanium photodetector for O band, and the first integrated silicon (Si) APD for visible light. A unique feature of the integrated Si APD system for visible light is the end-fire coupling between the silicon nitride (SiN) waveguide and the Si APD in the same layer. This allows for broadband and high-efficiency coupling of light from the SiN waveguide to the Si APD for light detection, without the drawbacks of conventional interlayer coupling. Our work on integrated Si APDs based on Geiger-mode and our progress towards achieving single photon detection for visible light is discussed in the talk.

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Rogalski, Antoni, Zbigniew Bielecki, Janusz Mikołajczyk, and Jacek Wojtas. "Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids." Sensors 23, no. 9 (May 2, 2023): 4452. http://dx.doi.org/10.3390/s23094452.

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The paper presents the long-term evolution and recent development of ultraviolet photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly described. Then the different types of detectors are presented, starting with the older photoemission detectors through photomultipliers and image intensifiers. More attention is paid to silicon and different types of wide band gap semiconductor photodetectors such as AlGaN, SiC-based, and diamond detectors. Additionally, Ga2O3 is considered a promising material for solar-blind photodetectors due to its excellent electrical properties and a large bandgap energy. The last part of the paper deals with new UV photodetector concepts inspired by new device architectures based on low-dimensional solid materials. It is shown that the evolution of the architecture has shifted device performance toward higher sensitivity, higher frequency response, lower noise, and higher gain-bandwidth products.

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Kim, Hyunki, Gyeong-Nam Lee, and Joondong Kim. "Hybrid Structures of ITO-Nanowire-Embedded ITO Film for the Enhanced Si Photodetectors." Journal of Nanomaterials 2018 (July 2, 2018): 1–8. http://dx.doi.org/10.1155/2018/4178989.

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A high-performance silicon UV photodetector was achieved by using a hybrid of a film with nanowires. Electrically conductive and optically transparent indium-tin oxide (ITO) was deposited to form an ITO film or ITO nanowire (NW) on a Si substrate, resulting in a heterojunction. The ITO-film device is stable with a low-leakage current. Meanwhile, the ITO NWs demonstrated an excellent capability to collect photogenerated carriers. The hybrid ITO (NWs on a film)/Si photodetector demonstrates a fast UV reactive time of 1.6 ms among Si-based photodetectors. We may find a means of enhancing the photoelectric performance capabilities of devices beyond the limits of conventional Si via the adoption of functional designs. Moreover, the use of a homogeneous material for the structuring of films and nanowires would offer a remarkable advantage by reducing both the number of fabrication steps and the cost.

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Crisci, Teresa, Piera Maccagnani, Luigi Moretti, Caterina Summonte, Mariano Gioffrè, Rita Rizzoli, and Maurizio Casalino. "The Physics behind the Modulation of Thermionic Current in Photodetectors Based on Graphene Embedded between Amorphous and Crystalline Silicon." Nanomaterials 13, no. 5 (February 26, 2023): 872. http://dx.doi.org/10.3390/nano13050872.

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In this work, we investigate a vertically illuminated near-infrared photodetector based on a graphene layer physically embedded between a crystalline and a hydrogenated silicon layer. Under near-infrared illumination, our devices show an unforeseen increase in the thermionic current. This effect has been ascribed to the lowering of the graphene/crystalline silicon Schottky barrier as the result of an upward shift in the graphene Fermi level induced by the charge carriers released from traps localized at the graphene/amorphous silicon interface under illumination. A complex model reproducing the experimental observations has been presented and discussed. Responsivity of our devices exhibits a maximum value of 27 mA/W at 1543 nm under an optical power of 8.7 μW, which could be further improved at lower optical power. Our findings offer new insights, highlighting at the same time a new detection mechanism which could be exploited for developing near-infrared silicon photodetectors suitable for power monitoring applications.

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Wang, Xuan, Yehua Tang, Wanping Wang, Hao Zhao, Yanling Song, Chaoyang Kang, and Kefan Wang. "Fabrication and Characterization of a Self-Powered n-Bi2Se3/p-Si Nanowire Bulk Heterojunction Broadband Photodetector." Nanomaterials 12, no. 11 (May 26, 2022): 1824. http://dx.doi.org/10.3390/nano12111824.

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In the present study, vacuum evaporation method is used to deposit Bi2Se3 film onto Si nanowires (NWs) to form bulk heterojunction for the first time. Its photodetector is self-powered, its detection wavelength ranges from 390 nm to 1700 nm and its responsivity reaches its highest value of 84.3 mA/W at 390 nm. In comparison to other Bi2Se3/Si photodetectors previously reported, its infrared detection length is the second longest and its response speed is the third fastest. Before the fabrication of the photodetector, we optimized the growth parameter of the Bi2Se3 film and the best Bi2Se3 film with atomic steps could finally be achieved. The electrical property measurement conducted by the physical property measurement system (PPMS) showed that the grown Bi2Se3 film was n-type conductive and had unique topological insulator properties, such as a metallic state, weak anti-localization (WAL) and linear magnetic resistance (LMR). Subsequently, we fabricated Si NWs by the metal-assisted chemical etching (MACE) method. The interspace between Si NWs and the height of Si NWs could be tuned by Ag deposition and chemical etching times, respectively. Finally, Si NWs fabricated with the Ag deposition time of 60 s and the etching time of 10 min was covered by the best Bi2Se3 film to be processed for the photodetector. The primary n-Bi2Se3/p-Si NWs photodetector that we fabricated can work in a self-powered mode and it has a broadband detection range and fast response speed, which indicates that it can serve as a promising silicon-based near- and mid-infrared photodetector.

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Karelits, Matityahu, Emanuel Lozitsky, Avraham Chelly, Zeev Zalevsky, and Avi Karsenty. "Advanced Surface Probing Using a Dual-Mode NSOM–AFM Silicon-Based Photosensor." Nanomaterials 9, no. 12 (December 16, 2019): 1792. http://dx.doi.org/10.3390/nano9121792.

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A feasibility analysis is performed for the development and integration of a near-field scanning optical microscope (NSOM) tip–photodetector operating in the visible wavelength domain of an atomic force microscope (AFM) cantilever, involving simulation, processing, and measurement. The new tip–photodetector consists of a platinum–silicon truncated conical photodetector sharing a subwavelength aperture, and processing uses advanced nanotechnology tools on a commercial silicon cantilever. Such a combined device enables a dual-mode usage of both AFM and NSOM measurements when collecting the reflected light directly from the scanned surface, while having a more efficient light collection process. In addition to its quite simple fabrication process, it is demonstrated that the AFM tip on which the photodetector is processed remains operational (i.e., the AFM imaging capability is not altered by the process). The AFM–NSOM capability of the processed tip is presented, and preliminary results show that AFM capability is not significantly affected and there is an improvement in surface characterization in the scanning proof of concept.

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Eid, Mahmoud M. A., Shabana Urooj, Norah Muhammad Alwadai, and Ahmed Nabih Zaki Rashed. "AlGaInP optical source integrated with fiber links and silicon avalanche photo detectors in fiber optic systems." Indonesian Journal of Electrical Engineering and Computer Science 23, no. 2 (August 1, 2021): 847. http://dx.doi.org/10.11591/ijeecs.v23.i2.pp847-854.

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This study has clarified aluminium gallium indium phosphide (AlGaInP) optical source integrated with fiber links and silicon avalanche photodetectors in fiber optic systems. The output spectral power, rise time, signal frequency and resonance frequency for AlGaInP laser diode. The laser diode rise time, output spectral power and resonance/signal frequencies versus injection current and ambient temperatures are sketched. The silica doped germanium fiber link pulse broadening and the signal fiber bandwidth are investigated against temperature variations. The signal per noise ratio is related to Q value and bit error rate (BER) at the receiving point (Si avalanche photodetector (APD)) are sketched with temperature.

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Palenskis, Vilius, Jonas Matukas, Justinas Glemža, and Sandra Pralgauskaitė. "Review of Low-Frequency Noise Properties of High-Power White LEDs during Long-Term Aging." Materials 15, no. 1 (December 21, 2021): 13. http://dx.doi.org/10.3390/ma15010013.

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Low-frequency noise investigation is a highly sensitive and very informative method for characterization of white nitride-based light-emitting diodes (LEDs) as well as for the evaluation of their degradation. We present a review of quality and reliability investigations of high-power (1 W and 3 W) white light-emitting diodes during long-term aging at the maximum permissible forward current at room temperature. The research was centered on the investigation of blue InGaN and AlInGaN quantum wells (QWs) LEDs covered by a YAG:Ce3+ phosphor layer for white light emission. The current-voltage, light output power, and low-frequency noise characteristics were measured. A broadband silicon photodetector and two-color (blue and red) selective silicon photodetectors were used for the LED output power detection, which makes it possible to separate physical processes related to the initial blue light radiation and the phosphor luminescence. Particular attention was paid to the measurement and interpretation of the simultaneous cross-correlation coefficient between electrical and optical fluctuations. The presented method enables to determine which part of fluctuations originates in the quantum well layer of the LED. The technique using the two-color selective photodetector enables investigation of changes in the noise properties of the main blue light source and the phosphor layer during the long-term aging.

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Ding, Yunhong, Zhao Cheng, Xiaolong Zhu, Kresten Yvind, Jianji Dong, Michael Galili, Hao Hu, N. Asger Mortensen, Sanshui Xiao, and Leif Katsuo Oxenløwe. "Ultra-compact integrated graphene plasmonic photodetector with bandwidth above 110 GHz." Nanophotonics 9, no. 2 (February 25, 2020): 317–25. http://dx.doi.org/10.1515/nanoph-2019-0167.

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AbstractGraphene-based photodetectors, taking advantage of the high carrier mobility and broadband absorption in graphene, have recently seen rapid development. However, their performance with respect to responsivity and bandwidth is still limited by the weak light-graphene interaction and large resistance-capacitance product. Here, we demonstrate a waveguide-coupled integrated graphene plasmonic photodetector on a silicon-on-insulator platform. Benefiting from plasmon-enhanced graphene-light interaction and subwavelength confinement of the optical energy, a small-footprint graphene-plasmonic photodetector is achieved working at the telecommunication window, with a large a bandwidth beyond 110 GHz and a high intrinsic responsivity of 360 mA/W. Attributed to the unique electronic band structure of graphene and its ultra-broadband absorption, operational wavelength range extending beyond mid-infrared, and possibly further, can be anticipated. Our results show that the combination of graphene with plasmonic devices has great potential to realize ultra-compact, high-speed optoelectronic devices for graphene-based optical interconnects.

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Gulakov, Ivan, Andrey Zenevich, Evgeniy Novikov, Olga Kochergina, and Anastasiy Lagutik. "Investigation of the characteristics of matrix multi-element avalanche photodetectors operating in the photon counting mode." ADVANCES IN APPLIED PHYSICS 9, no. 3 (August 3, 2021): 216–23. http://dx.doi.org/10.51368/2307-4469-2021-9-3-216-223.

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At present, matrix multi-element avalanche photodetectors operating in the photon counting mode are widely used for detecting optical radiation. However, the char-acteristics of matrix multi-element avalanche photodetectors operating in this mode are currently insufficiently studied. Prototypes of Si-photomultiplier tubes (Si-PMTs) with a p+–p–n+ structure produced by JSC Integral (Republic of Belarus), as well as serially produced silicon photomultipliers Ketek PM 3325 and ON Semi FC 30035 have been used as objects of research. This article presents the research results of characteristics in the photon counting mode of the specified photodetec-tors. The dependences of the specific amplitude sensitivity ratio on the wavelength of optical radiation, the temperature, the supply voltage of the matrix multi-element avalanche photodetector are determined.

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Cheng, B. W., C. B. Li, F. Yao, C. L. Xue, J. G. Zhang, R. W. Mao, Y. H. Zuo, L. P. Luo, and Q. M. Wang. "Silicon membrane resonant-cavity-enhanced photodetector." Applied Physics Letters 87, no. 6 (August 8, 2005): 061111. http://dx.doi.org/10.1063/1.2009822.

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Li, Chong, Chun-Lai Xue, Ya-Ming Li, Chuan-Bo Li, Bu-Wen Cheng, and Qi-Ming Wang. "High performance silicon waveguide germanium photodetector." Chinese Physics B 24, no. 3 (February 26, 2015): 038502. http://dx.doi.org/10.1088/1674-1056/24/3/038502.

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Zheng, J. P., K. L. Jiao, W. P. Shen, W. A. Anderson, and H. S. Kwok. "Highly sensitive photodetector using porous silicon." Applied Physics Letters 61, no. 4 (July 27, 1992): 459–61. http://dx.doi.org/10.1063/1.107884.

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Su, Zhan, Ehsan Shah Hosseini, Erman Timurdogan, Jie Sun, Michele Moresco, Gerald Leake, Thomas N. Adam, Douglas D. Coolbaugh, and Michael R. Watts. "Whispering gallery germanium-on-silicon photodetector." Optics Letters 42, no. 15 (July 17, 2017): 2878. http://dx.doi.org/10.1364/ol.42.002878.

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MacDonald, R. P., N. G. Tarr, B. A. Syrett, S. A. Boothroyd, and J. Chrostowski. "MSM photodetector fabricated on polycrystalline silicon." IEEE Photonics Technology Letters 11, no. 1 (January 1999): 108–10. http://dx.doi.org/10.1109/68.736410.

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Tucci, Mario, and Rosario DeRosa. "Amorphous/crystalline silicon two terminal photodetector." Solid-State Electronics 44, no. 7 (July 2000): 1315–20. http://dx.doi.org/10.1016/s0038-1101(99)00325-1.

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Su, Yuanjie, Shibin Li, Zhiming Wu, Yajie Yang, Yadong Jiang, Jing Jiang, Zhanfei Xiao, Peng Zhang, and Ting Zhang. "High responsivity MSM black silicon photodetector." Materials Science in Semiconductor Processing 16, no. 3 (June 2013): 619–24. http://dx.doi.org/10.1016/j.mssp.2012.11.008.

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Gaede, Rhonda, Fenglei Li, David Hyde, and Dashen Shen. "Amorphous silicon photodetector for optical interconnections." Journal of Non-Crystalline Solids 266-269 (May 2000): 1208–12. http://dx.doi.org/10.1016/s0022-3093(00)00043-0.

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Journal articles on the topic 'Silicon photodetector'

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