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Relevant bibliographies by topics / Silicon photodetector

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Academic literature on the topic 'Silicon photodetector'

Author: Grafiati

Published: 6 September 2023

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Journal articles on the topic "Silicon photodetector"

1

Zhao, Jijie, Huan Liu, Lier Deng, et al. "High Quantum Efficiency and Broadband Photodetector Based on Graphene/Silicon Nanometer Truncated Cone Arrays." Sensors 21, no. 18 (2021): 6146. http://dx.doi.org/10.3390/s21186146.

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Light loss is one of the main factors affecting the quantum efficiency of photodetectors. Many researchers have attempted to use various methods to improve the quantum efficiency of silicon-based photodetectors. Herein, we designed highly anti-reflective silicon nanometer truncated cone arrays (Si NTCAs) as a light-trapping layer in combination with graphene to construct a high-performance graphene/Si NTCAs photodetector. This heterojunction structure overcomes the weak light absorption and severe surface recombination in traditional silicon-based photodetectors. At the same time, graphene can

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2

Wang, Fangjie, Xiaoxu Chen, Sikun Zhou, et al. "An on-chip integrated microfiber–silicon–graphene hybrid structure photodetector." Laser Physics 31, no. 12 (2021): 126207. http://dx.doi.org/10.1088/1555-6611/ac3245.

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Abstract Silicon photonic devices have great potential for photocommunication, and silicon-based photodetectors have attracted wide attention. Here, we report an on-chip integrated microfiber–silicon–graphene hybrid structure photodetector that can operate in the visible and near-infrared ranges. The detector has a responsivity of ∼136 mA W−1 at 808 nm and a rise time of ∼1.1 μs. At a reverse bias of 5 V, we achieved a responsivity of ∼1350 mA W−1. Our device provides an option for on-chip integration.

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Zhang, Lijian, Weikang Lu, Ruijie Qian, et al. "Highly responsive silicon-based hot-electron photodetector with self-aligned metamaterial interdigital electrodes." Applied Physics Letters 122, no. 3 (2023): 031101. http://dx.doi.org/10.1063/5.0133705.

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A sensitive silicon-based hot-electron photodetector based on a self-aligned metal–semiconductor–metal junction is developed. Nearly perfect absorption is achieved with the metamaterial optical coupling, whereas the absorption difference between the upper and lower interdigital gratings is as large as 70% near the resonant wavelength. Arising from the asymmetric photo-absorption, the measured responsivity values of the self-aligned interdigital grating devices reach 1.89 and 0.78 mA/W under zero biasing conditions at the wavelengths of 1310 and 1550 nm, respectively. These values approach the

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Rogalski, Antoni, Piotr Martyniuk, Malgorzata Kopytko, Pawel Madejczyk, and Sanjay Krishna. "InAsSb-Based Infrared Photodetectors: Thirty Years Later On." Sensors 20, no. 24 (2020): 7047. http://dx.doi.org/10.3390/s20247047.

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In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsS

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Huang, Zhihong, James E. Carey, Mingguo Liu, Xiangyi Guo, Eric Mazur, and Joe C. Campbell. "Microstructured silicon photodetector." Applied Physics Letters 89, no. 3 (2006): 033506. http://dx.doi.org/10.1063/1.2227629.

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Hawkins, Aaron R., Thomas E. Reynolds, Derek R. England, et al. "Silicon heterointerface photodetector." Applied Physics Letters 68, no. 26 (1996): 3692–94. http://dx.doi.org/10.1063/1.115975.

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Das, K., S. Mukherjee, S. Manna, S. K. Ray, and A. K. Raychaudhuri. "Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity." Nanoscale 6, no. 19 (2014): 11232–39. http://dx.doi.org/10.1039/c4nr03170a.

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Single silicon nanowire-based MSM photodetectors show ultra high responsivity (>10<sup>4</sup> A W<sup>−1</sup>) in the near-infra-red region, even at zero bias. The observed photoresponse is sensitive to the polarization of the exciting light, allowing the device to act as a polarization-dependent photodetector.

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Seo, Seung Gi, Jae Hyeon Ryu, Seung Yeob Kim, Jinheon Jeong, and Sung Hun Jin. "Enhancement of Photodetective Properties on Multilayered MoS2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors." Nanomaterials 11, no. 6 (2021): 1586. http://dx.doi.org/10.3390/nano11061586.

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Photodetectors and display backplane transistors based on molybdenum disulfide (MoS2) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS2 photodetector itself or emerging applications. In this study, to suggest a better insight into the photodetector performances of MoS2 thin film transistors (TFTs), as photosensors for possible integrated system, we performed a comparative study on the photoresponse of MoS2 and hydrogenated amorphous silicon (a-Si:H) TFTs. As a result, in the various wavelengths and optical power ranges

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SHING, CHRISTOPHER, LIQIAO QIN, and SHALYA SAWYER. "BIO-SENSING SENSITIVITY OF A NANOPARTICLE BASED ULTRAVIOLET PHOTODETECTOR." International Journal of High Speed Electronics and Systems 20, no. 03 (2011): 505–13. http://dx.doi.org/10.1142/s0129156411006799.

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Bio-sensing sensitivity of a spectrally selective nanoparticle based ultraviolet (UV) photodetector is characterized in comparison to a silicon photodiode and a photomultiplier tube (PMT). The nanoparticle based photodetector is comprised of poly-vinyl alcohol (PVA) coated zinc-oxide ( ZnO ) nanoparticles deposited on an aluminum-gallium-nitride ( AlGaN ) epitaxially grown substrate. The sensitivity was determined by measuring the fluorescence intensity of the native fluorophore, tryptophan, in Escherichia coli (E-coli, ATCC-25922) cells. Tryptophan intrinsically fluoresces with a peak at 340

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Ozsahin, I., B. Uzun, and D. U. Ozsahin. "Selection of photodetectors in nuclear medical imaging using MCDM methods." Journal of Instrumentation 17, no. 06 (2022): C06003. http://dx.doi.org/10.1088/1748-0221/17/06/c06003.

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Abstract Photodetectors used in nuclear medical imaging such as single photon emission computed tomography (SPECT) and positron emission tomography (PET) are an important element of radiation detection systems. Selecting the photodetector depends on many physical criteria including quantum efficiency (QE) and gain. The aim of this study is to apply multi-criteria decision-making (MCDM) methods to determine the optimum photodetector based on the evaluation and comparison of complex and multiple criteria. The photodetectors investigated in this study are photomultiplier tube (PMT), avalanche pho

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Dissertations / Theses on the topic "Silicon photodetector"

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Meyer, Jason T., and Mahmoud Fallahi. "Ultra-compact integrated silicon photonics balanced coherent photodetector." SPIE-INT SOC OPTICAL ENGINEERING, 2016. http://hdl.handle.net/10150/621797.

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In this paper, the performance simulations of a novel ultra-compact balanced coherent photodetector for operation at a wavelength of 1.5 mu m are presented and design proposals for future fabrication processes are provided. It consists of a compact 2x2 MMI that is evanescently coupled into a germanium MSM photodetection layer. The simulations demonstrate dark current less than 10 nA, capacitance less than 20 fF, and optical bandwidth in the 10-30 GHz range. We propose utilizing the simplicity of direct wafer bonding to bond the detection layer to the output waveguides to avoid complicated epit

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WANG, YIMING. "Research on graphene/silicon Schottky junction based photodetector." Doctoral thesis, Politecnico di Torino, 2021. http://hdl.handle.net/11583/2950502.

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Meyer, Jason T. "Ultra-compact Integrated Silicon Photonics Balanced Coherent Photodetectors." Thesis, The University of Arizona, 2016. http://hdl.handle.net/10150/613424.

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The design, simulation, and initial fabrication of a novel ultra-compact 2x2 silicon multimode-interference device evanescently coupled to a dual germanium metal-semiconductor-metal (MSM) photodetector is presented. For operation at the standard telecom wavelength of 1.5 µm, the simulations demonstrate high-speed operation at 30 GHz, low dark current in the nanoamp range, and external quantum efficiency of 80%. Error analysis was performed for possible tilt error introduced by hybrid integration of the MSM layer on top of the MMI waveguides by use of surface mount technology (SMT) and direct w

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Al, Johani Ebrahim Dakhil. "NIR silicon photodetector enhancement using photonic crystal cavity resonators." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/128418.

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Thesis: S.B., Massachusetts Institute of Technology, Department of Physics, 2019<br>Cataloged from PDF of thesis. "The Table of Contents does not accurately represent the page numbering"--Disclaimer page.<br>Includes bibliographical references (pages 45-47).<br>The growing demand for efficient infrared sensors for light ranging, thermal-cameras, and soon, free-space optical communications has yet to be answered. In this study, we use polycrystalline silicon in conjunction with a photonic crystal cavity (PhCC) to enhance light absorption for efficient sensing. We present a cost-effective altern

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Park, Hyunsung. "Vertical Silicon Nanowires for Image Sensor Applications." Thesis, Harvard University, 2014. http://nrs.harvard.edu/urn-3:HUL.InstRepos:13065028.

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Conventional image sensors achieve color imaging using absorptive organic dye filters. These face considerable challenges however in the trend toward ever higher pixel densities and advanced imaging methods such as multispectral imaging and polarization-resolved imaging. In this dissertation, we investigate the optical properties of vertical silicon nanowires with the goal of image sensor applications. First, we demonstrate a multispectral imaging system that uses a novel filter that consists of vertical silicon nanowires embedded in a transparent medium. Second, we demonstrate pixels consisti

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Filippi, Andrea. "Improving Silicon Photodetectors NIR Responsivity via Hybrid Opto-Plasmonic Resonances." Doctoral thesis, Università degli studi di Padova, 2019. http://hdl.handle.net/11577/3422331.

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During the past twenty years, the photoelectronic industry has grown to incredible proportions, producing devices that have become staples of our every-day life and have completely transformed the way we live. The core technology at the heart of the photoelectronic industry is the “photodetector”. Traditional photodetectors’ performance has dramatically improved after the introduction of nanostructured materials. Among these enhancement materials, plasmonic metal structures are of particular interest due to their peculiar and useful properties, such as optical resonances, high bulk, and surfac

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Duran, Joshua. "Silicon-Based Infrared Photodetectors for Low-Cost Imaging Applications." University of Dayton / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=dayton155653478017603.

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Sevison, Gary Alan. "Silicon Compatible Short-Wave Infrared Photonic Devices." University of Dayton / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1523553057993197.

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PALMIERI, ANDREA. "Multiphysics modelling of high-speed optoelectronic devices for silicon photonics platforms." Doctoral thesis, Politecnico di Torino, 2020. http://hdl.handle.net/11583/2849030.

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Tegegne, Zerihun. "SiGe/Si Microwave Photonic devices and Interconnects towards Silicon-based full Optical Links." Thesis, Paris Est, 2016. http://www.theses.fr/2016PESC1070/document.

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Avec la croissance forte de ces dernières années des objets connectés les technologies de communication optique et radio voient davantage d’opportunités de s’associer et se combiner dans des technologies bas-couts Photoniques-Microondes (MWP). Les réseaux domestiques en sont un exemple. La bande millimétrique notamment, de 57GHz à 67GHz, est utilisé pour contenir les exigences des communications sans fils très haut-débit, néanmoins, la couverture de ces systèmes wireless est limitée en intérieur (indoor) essentiellement à une seule pièce, à la fois du fait de l’atténuation forte de l’atmosphèr

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Books on the topic "Silicon photodetector"

1

AG, Siemens. Silicon photodetectors and infrared emitters data book 1985/86. Siemens Aktiengesellschaft, 1985.

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2

Miniaturized Silicon Photodetectors. MDPI, 2021. http://dx.doi.org/10.3390/books978-3-0365-0045-4.

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Characterization and integration of defect-mediated photodetectors for silicon photonic circuits: Ph.D. Thesis - Department of Engineering Physics, McMaster University, Hamilton, Canada. Library and Archives of Canada, 2011.

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Book chapters on the topic "Silicon photodetector"

1

Casalino, M., L. Sirleto, M. Gioffre, et al. "Fabrication and Characterization of a Silicon Photodetector at 1.55 Micron." In Lecture Notes in Electrical Engineering. Springer Netherlands, 2009. http://dx.doi.org/10.1007/978-90-481-3606-3_19.

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Kurudi, Sreevatsa, Riddhi Nandi, and Bijoy Krishna Das. "Scaling of Silicon PIN Waveguide Photodetector at 1550 nm Wavelength." In Springer Proceedings in Physics. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_150.

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3

Muller, Paul, and Yusuf Leblebici. "Silicon Photodetectors." In Analog Circuits and Signal Processing. Springer Netherlands, 2007. http://dx.doi.org/10.1007/978-1-4020-5912-4_5.

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Zimmermann, Horst. "SiGe Photodetectors." In Silicon Optoelectronic Integrated Circuits. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09904-9_4.

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Zimmermann, Horst. "SiGe Photodetectors." In Silicon Optoelectronic Integrated Circuits. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-05822-7_4.

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Zimmermann, Horst. "Integrated Silicon Photodetectors." In Silicon Optoelectronic Integrated Circuits. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09904-9_2.

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Zimmermann, Horst. "Integrated Silicon Photodetectors." In Silicon Optoelectronic Integrated Circuits. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-05822-7_2.

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Zimmermann, Horst. "Silicon Technologies and Integrated Photodetectors." In Springer Series in Optical Sciences. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-01521-2_3.

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Zimmermann, Horst. "Silicon Technologies and Integrated Photodetectors." In Springer Series in Photonics. Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-662-04018-8_3.

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Masini, G., A. Ferrari, M. Balucani, et al. "Amorphous Silicon Photodetectors for Oxidised Porous Silicon Based optical Interconnections." In Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5496-3_26.

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Conference papers on the topic "Silicon photodetector"

1

Lee, Ming K., K. R. Peng, and C. H. Chu. "Porous silicon photodetector." In Measurement Technology and Intelligent Instruments, edited by Li Zhu. SPIE, 1993. http://dx.doi.org/10.1117/12.156352.

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Qu, Zhibo, Milos Nedeljkovic, Jordi Soler-Penadés, et al. "Waveguide integrated graphene mid-infrared photodetector." In Silicon Photonics XIII, edited by Graham T. Reed and Andrew P. Knights. SPIE, 2018. http://dx.doi.org/10.1117/12.2290476.

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Dushaq, Ghada, Bruna Paredes, Juan Esteban Villegas, Srinivasa Reddy Tamalampudi, and Mahmoud Rasras. "Hybrid Integration of Multilayers GeP on a Silicon Photonics Platform for Optoelectronic Application." In CLEO: Applications and Technology. Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_at.2022.jw3a.33.

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we demonstrate a waveguide integrated photodetector based on multilayerd 2D GeP operating in the SWIR range. Results show that photodetectors work under bias with a low dark current of few nano-amps and exhibit remarkable photoresponsivity with excellent air stability.

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Salamin, Yannick, Ping Ma, Benedikt Baeuerle, Arne Josten, Alexandros Emboras, and Juerg Leuthold. "100 Gbit/s Graphene Photodetector." In Integrated Photonics Research, Silicon and Nanophotonics. OSA, 2018. http://dx.doi.org/10.1364/iprsn.2018.iw1b.2.

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Park, Hyundai, Alexander W. Fang, Richard Jones, et al. "A hybrid silicon evanescent photodetector." In 2007 65th Annual Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/drc.2007.4373710.

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Moein, Tania, Darius Gailevicius, Tomas Katkus, et al. "Graphene on silicon-nitride photodetector." In Micro + Nano Materials, Devices, and Applications 2019, edited by M. Cather Simpson and Saulius Juodkazis. SPIE, 2019. http://dx.doi.org/10.1117/12.2543391.

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Wang, Bo, Yuping Zhang, Libin Tang, et al. "Silicon based mesa heterojunction photodetector." In Earth and Space: From Infrared to Terahertz (ESIT 2022), edited by Junhao Chu. SPIE, 2023. http://dx.doi.org/10.1117/12.2665258.

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Tossoun, Bassem, Di Liang, and Raymond G. Beausoleil. "Heterogeneous quantum-dot microring photodetector on silicon." In Integrated Photonics Research, Silicon and Nanophotonics. OSA, 2021. http://dx.doi.org/10.1364/iprsn.2021.im5a.4.

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Estrella, Steven, Leif Johansson, Kenneth Hay, Jenna Campbell, and Milan L. Mashanovitch. "High-Performance Photodetector Modules for RF Photonics." In Integrated Photonics Research, Silicon and Nanophotonics. OSA, 2016. http://dx.doi.org/10.1364/iprsn.2016.iw2a.5.

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Gaberl, W., and H. Zimmermann. "Low-Capacitance Integrated Silicon Finger Photodetector." In 3rd IEEE International Conference on Group IV Photonics, 2006. IEEE, 2006. http://dx.doi.org/10.1109/group4.2006.1708186.

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Reports on the topic "Silicon photodetector"

1

Semendy, Fred, Greg Meissner, and Priyalal Wijewarnasuriya. Sulfur Implanted Black Silicon for Metal Semiconductor Metal (MSM) Photodetectors. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada571896.

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