Relevant bibliographies by topics / Silicon oxide

Academic literature on the topic 'Silicon oxide'

Author: Grafiati
Published: 4 June 2021
Last updated: 31 July 2024

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Journal articles on the topic "Silicon oxide"

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Ito, Takuya, Yasuyuki Ota, and Kensuke Nishioka. "Pattern Formation of Silicon Oxide Thin Film with InkMask." Applied Mechanics and Materials 481 (December 2013): 98–101. http://dx.doi.org/10.4028/www.scientific.net/amm.481.98.

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Patterned silicon oxide films were formed by a simple process using a dimethyl-silicone-oil as source and inks as patterning masks.After the coating of the ink, the dimethyl-silicone-oil was coated onto the substrate. The sample was heated at 150oC and ozone gas was irradiated. After the heat treatment with ozone gas, patterned silicon film was formed. The circle pattern with a diameter of 20 μm wassuccessfully formed.After the formation of the patterned silicon oxide film, the silicon oxide was hardly observed at the position where the ink coated.
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Olenych, I. B., L. S. Monastyrskyi, and B. P. Koman. "Electrical Properties of Silicon-Oxide Heterostructures on the Basis of Porous Silicon." Ukrainian Journal of Physics 62, no. 2 (February 2017): 166–71. http://dx.doi.org/10.15407/ujpe62.02.0166.

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Jong, Fun-Cheng, and Wen-Ching Hsieh. "Performance Comparison of SONOS-Type UV TD Sensor Using Indium Tin Oxide-Aluminum Oxide-Zirconia Aluminum Oxide-Silicon Oxide-Silicon and Indium Tin Oxide-Aluminum Oxide-Hafnium Aluminum Oxide-Silicon Oxide-Silicon." Crystals 13, no. 7 (July 13, 2023): 1092. http://dx.doi.org/10.3390/cryst13071092.

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This study compares the performance of two types of capacitive devices, indium tin oxide-aluminum oxide-zirconia aluminum oxide-silicon oxide-silicon (IAZAOS) and indium tin oxide-aluminum oxide-hafnium aluminum oxide-silicon oxide-silicon (IAHAOS), as silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory (NVM) total dose of ultraviolet radiation (UV TD) sensors. Results show that IAZAOS with zirconia aluminum oxide as the charge-trapping layer outperforms IAHAOS with hafnium aluminum oxide for a UV TD sensor. After exposure to UV TD irradiation of 100 mW·s/cm2, the threshold voltage (VT) change of IAZAOS is almost 1.25 times that of IAHAOS. The study also found that annealing can significantly improve the response performance of IAZAOS UV TD sensors. Furthermore, IAZAOS devices with partially smaller nanocrystals in the charge-trapping layer greatly enhance the response of SONOS-type UV TD sensors. The study also compared the constant voltage stress-induced leakage current (CVSILC) and found that the CVSILC for annealed IAZAOS devices is 1000 times smaller than that of IAHAOS devices. Moreover, the IAZAOS-I2Z2 exhibits a superior performance regarding irradiation/refresh cycle endurance as compared to the IAHAOS-I2H1 device. These findings suggest that IAZAOS capacitive devices have superior performance and potential for use in SONOS-type UV TD sensors.
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Hubbard, K. J., and D. G. Schlom. "Thermodynamic stability of binary oxides in contact with silicon." Journal of Materials Research 11, no. 11 (November 1996): 2757–76. http://dx.doi.org/10.1557/jmr.1996.0350.

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Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient data exist to conclude that all binary oxides except the following are thermodynamically unstable in contact with silicon at 1000 K: Li2O, most of the alkaline earth oxides (BeO, MgO, CaO, and SrO), the column IIIB oxides (Sc2O3, Y2O3, and Re2O3, where Re is a rare earth), ThO2, UO2, ZrO2, HfO2, and Al2O3. Of these remaining oxides, sufficient data exist to conclude that BeO, MgO, and ZrO2 are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations.
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Rabenberg, Lew, J. P. Zhou, Kil-Soo Ko, and Rita Johnson. "TEM Imaging of Amorphous Silicon Oxide - Silicon Nitride - Silicon Oxide Dielectric Films." Microscopy and Microanalysis 7, S2 (August 2001): 1228–29. http://dx.doi.org/10.1017/s1431927600032219.

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Thin films of amorphous silicon oxide and silicon nitride are routinely used as gate dielectrics in silicon-based microelectronic devices. It is valuable to be able to image them and measure their thicknesses quickly and accurately. This brief note describes conditions that can be used to obtain accurate and reproducible TEM images of oxide-nitride-oxide (ONO) thin films.Obtaining adequate contrast differences between oxide and nitride is not trivial because they have the same average atomic number, and both phases are amorphous. As stoichiometric compounds, both SiO2 and Si3N4 would have average atomic numbers equal to 10. For SiO2, (14+2(8))/3=10, and for Si3N4, (3(14)+4(7))/7=10. Thus, the atomic number contrast between these two is weak or nonexistent. Similarly, the amorphous character prevents the use of conventional diffraction contrast techniques.However, the density of Si3N4 (3.2 g/cm3) is considerably greater than the density of SiO2 (2.6 g/cm3), reflecting the higher average coordination of N compared with O.
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Latukhina, N. V. "Composition Profiles of Silicon–Silicon Oxide and Silicon–Rare Earth Oxide Structures." Technical Physics Letters 31, no. 7 (2005): 564. http://dx.doi.org/10.1134/1.2001055.

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Nishioka, Kensuke, Kosei Sato, Takuya Ito, and Yasuyuki Ota. "Low Temperature Formation of Silicon Oxide Thin Film and Modification of Film Quality by Argon Excimer Light." Advanced Materials Research 894 (February 2014): 408–11. http://dx.doi.org/10.4028/www.scientific.net/amr.894.408.

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Silicon oxide thin film was formed using reaction of spin-coated dimethyl-silicone-oil and 5% ozone gas at low temperature of 300°C. Silicone oil is used for lubrication, insulation, and so on, and it is inexpensive and easy to deal with owing to its stability. FT-IR spectrum of the formed silicon oxide film was similar to that of the thermally oxidized film, and we hardly observed peaks of Si-CH3and C-H bonds originated in silicone oil. The Si-OH bonds in the film were observed. The Si-OH bond causes the degradation of the electric properties of the insulator. In order to remove the Si-OH bonds, the silicon oxide film was treated with an argon excimer light at room temperature. The wavelength of the light was 126 nm. The amount of Si-OH bond was drastically reduced by the UV annealing. The energy of the UV light is high and the value is 9.8 eV. The high energy light may cut the bond of Si-OH. Therefore, the amount of Si-OH bond could be reduced.
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Kim, K. B., A. S. Lenshin, F. M. Chyragov, and S. I. Niftaliev. "FORMATION OF NANOSTRUCTURED TIN OXIDE FILM ON POROUS SILICON." Azerbaijan Chemical Journal, no. 3 (September 19, 2023): 83–89. http://dx.doi.org/10.32737/0005-2531-2023-3-83-89.

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Porous silicon is actively used in the fabrication of sensors and detectors because of its large specific surface area, which is an important characteristic for gas adsorption. To improve the operating parameters of the sensors and increase the stability of operation, a film of tin oxide was deposited on the substrate of porous silicon by vacuum-thermal evaporation. The choice of tin is due to its wide forbidden zone, low cost, and high sensitivity. Porous silicon was obtained by the electrochemical anodization of single-crystalline silicon KEF (100). The data on morphology, composition and optical properties of the initial sample of porous silicon and the sample with deposited tin have been obtained by scanning electron microscopy, infrared and photoluminescence spectroscopy. It was found that the chemical tin deposition on porous silicon leads to the formation of composite structure, which significantly prevents further oxidation of the porous layer during storage, and to the shift of the luminescence band maximum
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Lin, M.-T., R. J. Jaccodine, and T. J. Delph. "Planar oxidation of strained silicon substrates." Journal of Materials Research 16, no. 3 (March 2001): 728–33. http://dx.doi.org/10.1557/jmr.2001.0112.

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We report here on a series of experiments in which relatively low levels of in-plane bending strain were applied to oxidizing silicon substrates. These were found to result in significant decreases in oxide thickness in the ultrathin oxide regime. Both tensile and compressive bending resulted in roughly the same degree of thickness retardation, although compressive bending typically led to somewhat thinner oxides than did tensile bending. An examination of the experimental data indicate that the principal effect seems to occur in the very early stages of oxidation, with only minor effects on subsequent oxide growth. We hypothesize that the observed oxide thickness retardation is related to straining of the underlying silicon lattice at the oxidation front.
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Kim, M. J. "Quantitative analysis of silicon oxide using EELS." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 986–87. http://dx.doi.org/10.1017/s0424820100172668.

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Silicon oxide exists as a continuous solid solution of Si and O (i.e., Si to SiO2), and its band gap energy (Eg) depends on the oxygen content in the system. Si is a semiconductor (Eg=1.1eV) but SiO2 is an insulator (Eg=9eV). Substoichiometric oxide SiOx, where 0<x<2, is a semi-insulator. With its extensive applications in electronic and photonic devices, quantitative analysis for the structure and composition of silicon oxide synthesized by various methods becomes increasingly important to understand its structure/properties relationships. EELS, when coupled to a TEM with a field emission source, is a powerful analytical technique for obtaining a host of spatially resolved information from nanoscale solids. In this paper, several examples of applications of high spatial resolution EELS for quantitative analysis of silicon oxides will be illustrated, with brief descriptions of experimental and data quantification procedure.
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Dissertations / Theses on the topic "Silicon oxide"

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Mehonić, Adnan. "Resistive switching in silicon-rich silicon oxide." Thesis, University College London (University of London), 2014. http://discovery.ucl.ac.uk/1420436/.

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Over the recent decade, many different concepts of new emerging memories have been proposed. Examples of such include ferroelectric random access memories (FeRAMs), phase-change RAMs (PRAMs), resistive RAMs (RRAMs), magnetic RAMs (MRAMs), nano-crystal floating-gate flash memories, among others. The ultimate goal for any of these memories is to overcome the limitations of dynamic random access memories (DRAM) and flash memories. Non-volatile memories exploiting resistive switching – resistive RAM (RRAM) devices – offer the possibility of low programming energy per bit, rapid switching, and very high levels of integration – potentially in 3D. Resistive switching in a silicon-based material offers a compelling alternative to existing metal oxide-based devices, both in terms of ease of fabrication, but also in enhanced device performance. In this thesis I demonstrate a redox-based resistive switch exploiting the formation of conductive filaments in a bulk silicon-rich silicon oxide. My devices exhibit multi-level switching and analogue modulation of resistance as well as standard two-level switching. I demonstrate different operational modes (bipolar and unipolar switching modes) that make it possible to dynamically adjust device properties, in particular two highly desirable properties: non-linearity and self-rectification. Scanning tunnelling microscopy (STM), atomic force microscopy (AFM), and conductive atomic force microscopy (C-AFM) measurements provide a more detailed insight into both the location and the dimensions of the conductive filaments. I discuss aspects of conduction and switching mechanisms and we propose a physical model of resistive switching. I demonstrate room temperature quantisation of conductance in silicon oxide resistive switches, implying ballistic transport of electrons through a quantum constriction, associated with an individual silicon filament in the SiOx bulk. I develop a stochastic method to simulate microscopic formation and rupture of conductive filaments inside an oxide matrix. I use the model to discuss switching properties – endurance and switching uniformity.
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Anthony, Carl John. "Oxide interface studies on silicon and silicon carbide." Thesis, University of Newcastle Upon Tyne, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.424150.

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Gold, Scott Alan. "Nitrogen incorporation in thin silicon oxide films for passivation of silicon solar cell surfaces." Thesis, Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/11101.

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Shah, M. "Excitation mechanisms in erbium-doped silicon-rich silicon oxide." Thesis, University College London (University of London), 2014. http://discovery.ucl.ac.uk/1420212/.

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Since the invention of the first silicon transistor in 1947, the electronics industry has grown at a rapid rate, famously predicted and guided by Moore’s law. However, it has recently become apparent that satisfying Moore’s law is becoming increasingly difficult; we are now approaching the fundamental limits of device miniaturization and device speed, and alternative solutions for this problem are continuously being pursued. Over the past couple of decades, silicon photonics has emerged as a promising alternative solution. By carrying data through photons instead of electrons, many of the problems faced in an electronic device become irrelevant in an equivalent photonic device. The challenge of silicon photonics is to demonstrate lasing in a material that is compatible with existing CMOS processing technology, namely silicon. Light emission from silicon, however, is very inefficient, due to its indirect electronic bandgap. Silicon nanostructures, on the other hand, exhibit far higher light emission efficiencies, which has been attributed to quantum confinement effects. Erbium is one of the most interesting rare earth impurities for optical functionality, as it emits photons at 1.54µm, the wavelength that corresponds to minimum attenuation in silica fibres. However, erbium has a relatively low excitation cross section, and narrow excitation bands, necessitating expensive lasers for amplifier operation. It has been found that, by co-doping erbium with silicon-nanocrystals (Si-ncs), far higher excitation efficiencies of erbium can be attained, along with broadband excitation, through energy transfer from excited Si-ncs. To date, a clear understanding of the physics involved in the excitation mechanism is lacking. In this thesis, I identify erbium excitation processes in the Er doped silicon rich silicon oxide material, through photoluminescence (PL) spectroscopy. In particular, time resolved decay data of erbium emission is analysed through exponential fitting and rate equation modelling. The significance of Purcell enhanced radiative emission, and Er ion-ion interactions are highlighted. Furthermore, a characterisation study of Er doped silicon rich silicon oxide thin films will be carried out, revealing the significance and differences between defect, Si- nanocluster, and Si-nanocrystal sensitisation of Er ions. The prospects of device fabrication will also be discussed.
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Johnson, Robert Shawn. "Properties of Aluminum Oxide and Aluminum Oxide Alloys and their Interfaces with Silicon and Silicon Dioxide." NCSU, 2002. http://www.lib.ncsu.edu/theses/available/etd-20020122-104946.

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A remote plasma enhanced chemical vapor deposition method, RPECVD, was utilized to deposit thin films of aluminum oxide, tantalum oxide, tantalum aluminates, and hafnium aluminates. These films were analyzed using auger electron spectroscopy, AES, Fourier transform infrared spectroscopy, FTIR, X-ray diffraction, XRD, nuclear resonance profiling, NRP, capacitance versus voltage, C-V, and current versus voltage, J-V. FTIR indicated the alloys were homogeneous and pseudobinary in character. Combined with XRD the crystallization temperatures for films >100 nm were measured. The alloys displayed an increased temperature stability with the crystallization points being raise by >100ºC above the end point values.In-situ AES analysis provided a study of the initial formation of the films' interface with the silicon substrate. For Al2O3 these results were correlated to NRP results and indicated a thin, ~0.6 nm, interfacial layer formed during deposition.C-V characteristics indicated a layer of fixed negative charge associated with Al2O3. For Ta2O5 the C-V and J-V results displayed high levels of leakage current, due to a low conduction band offset with silicon. Both aluminates were dominated by electron trapping states. These states were determined to be due to (i) a network "break-up" component and (ii) localized atomic d-states of hafnium and tantalum atoms.

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Kwa, Kelvin Sian Kiat. "Characterisation of strained silicon / silicon germanium metal-oxide-semiconductor devices." Thesis, University of Newcastle Upon Tyne, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.405358.

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Wu, Kehuey. "Strain effects on the valence band of silicon piezoresistance in p-type silicon and mobility enhancement in strained silicon pMOSFET /." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0008390.

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Bowes, Sarah-Jane. "The study of Si-O bonds in low temperature matrices and in the gas phase." Thesis, University of Southampton, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.342658.

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Bae, Dohyun. "Sputtering fabrication of silicon nitride and silicon oxide based dichroic mirrors." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/98645.

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Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2015.
Cataloged from PDF version of thesis.
Includes bibliographical references (page 37).
Thin films in optical materials utilize the properties of multiple materials to obtain specific and fine-tuned transmission, absorption and reflectance at wavelengths. Dichroic mirrors exhibit very different reflectance and transmission rates at certain cut-off wavelengths, which can be adjusted using changes in layer materials and thickness. This is due to constructive optical interference between alternating layers of two thin films of different refractive indices. This study explored the sputtering methods of thin-film multilayers to form dichroic mirrors in the visible spectrum for future solar-cell applications. Silicon oxide and silicon nitride targets were selected as materials used in the sputtering process. The sputtered multilayers and films were then characterized and analyzed using spectrophotometry. The transmission spectrum of the initial multilayer depicted failure in transmission at wavelengths under 500nm. The components of the multilayer were then sputtered and analyzed to troubleshoot the problematic nitride films. Transmission spectra were utilized to select each following process, and both reactive sputtering and cosputtering were explored as means of creating nitride films with functional properties. Transmission spectra were analyzed using the Swanepoel method to quantify optical characteristics to assure reactive sputtering of the targets in a nitrogen environment as a viable direction of mirror construction. Possible further work include the use of other targets such as titanium oxide, and different chamber gas mixtures for finer control in the composition of the film layers.
by Dohyun Bae.
S.B.
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Moskowitz, Steven. "Atomic force miscroscopy [sic] study of SiO₂/Si(111)--(7x7) grown via atomic oxygen plasma /." Thesis, Connect to this title online; UW restricted, 2005. http://hdl.handle.net/1773/11556.

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Books on the topic "Silicon oxide"

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J, Dumin D., ed. Oxide reliability: A summary of silicon oxide wearout, breakdown, and reliability. [River Edge, NJ]: World Scientific, 2002.

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Ragnarsson, Lars-Åke. Ultrathin oxides in metal-oxide-silicon structures: Defects and characterization. Göteborg: Chalmers tekniska högsk., 1999.

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Rumak, N. V. Sistema kremniĭ--dvuokisʹ kremnii͡a︡ v MOP-strukturakh. Minsk: "Nauka i tekhnika", 1986.

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Robert, Corriu, Jutzi Peter, and Workshop on Tailor-Made Silicon-Oxygen Compounds--from Molecules to Materials (1995 : University of Bielefeld, Germany), eds. Tailor-made silicon-oxygen compounds: From molecules to materials. Braunschweig/Wiesbaden: Vieweg, 1996.

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Baliga, Jayant. Silicon RF power MOSFETs. Singapore: World Scientific, 2005.

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A, Terlep Judith, Dever Therese M, and United States. National Aeronautics and Space Administration., eds. Atomic oxygen durability of solar concentrator materials for Space Station Freedom. [Washington, DC]: National Aeronautics and Space Administration, 1990.

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Chin, Miao. Complementary metal oxide silicon cyclic redundancy check generators. Monterey, Calif: Naval Postgraduate School, 1991.

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1948-, Gautier Jacques, ed. Physics and operation of silicon devices in integrated circuits. London: ISTE, 2009.

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1948-, Gautier Jacques, ed. Physics and operation of silicon devices in integrated circuits. London: ISTE, 2009.

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1948-, Gautier Jacques, ed. Physics and operation of silicon devices in integrated circuits. London: ISTE, 2009.

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Book chapters on the topic "Silicon oxide"

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Hori, Takashi. "Thermally Grown Silicon Oxide." In Gate Dielectrics and MOS ULSIs, 149–207. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60856-8_4.

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Morita, Mizuho. "Native Oxide Films and Chemical Oxide Films." In Ultraclean Surface Processing of Silicon Wafers, 543–58. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-662-03535-1_42.

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Broussous, Lucile, Pascal Besson, M. M. Frank, and D. Bourgeat. "Single Backside Cleaning on Silicon, Silicon Nitride and Silicon Oxide." In Solid State Phenomena, 249–54. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-06-x.249.

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Enquist, Paul. "Metal/Silicon Oxide Hybrid Bonding." In Handbook of Wafer Bonding, 261–78. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527644223.ch13.

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Tilak, Vinayak. "Inversion Layer Electron Transport in 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors." In Silicon Carbide, 267–90. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629077.ch11.

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Riedel, R., A. Kienzle, and M. Frieß. "Non-Oxide Silicon-Based Ceramics from Novel Silicon Polymers." In Applications of Organometallic Chemistry in the Preparation and Processing of Advanced Materials, 155–71. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0337-4_9.

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Gusev, E. Yu, S. P. Avdeev, S. V. Malokhatko, V. S. Klimin, V. V. Polyakov, S. Wang, X. Ren, et al. "Silicon-on-Silicon Oxide Metalens: Design and Fabrication Aspects." In Springer Proceedings in Materials, 56–67. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-52239-0_6.

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Hüpkes, J., J. Müller, and B. Rech. "Texture Etched ZnO:Al for Silicon Thin Film Solar Cells." In Transparent Conductive Zinc Oxide, 359–413. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-73612-7_8.

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Yang, Seung Dong, Kwang Seok Jeong, Ho Jin Yun, Yu Mi Kim, Sang Youl Lee, Sung Kyu Kwon, Jae sub Oh, Hi Deok Lee, and Ga Won Lee. "RTS Noise Analysis in Fin-type Silicon-Oxide-High-k-Oxide-Silicon Flash Memory." In Supplemental Proceedings, 81–86. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118357002.ch11.

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Habersat, D. B., Aivars J. Lelis, G. Lopez, J. M. McGarrity, and F. Barry McLean. "On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices." In Silicon Carbide and Related Materials 2005, 1007–10. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1007.

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Conference papers on the topic "Silicon oxide"

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Ahles, Christopher, Jong Choi, Raymond Hung, Namsung Kim, Srinivas Nemani, and Andrew Kummel. "Selective Etching of Native Silicon Oxide in Preference to Silicon Oxide and Silicon." In 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). IEEE, 2019. http://dx.doi.org/10.1109/vlsi-tsa.2019.8804691.

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Kwon, Min-Suk. "Theoretical Investigation of CMOS-Compatible Metal-Oxide-Silicon-Oxide-Metal Waveguides." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/iprsn.2011.imb4.

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Haschke, Jan, Raphaël Monnard, Luca Antognini, Jean Cattin, Amir A. Abdallah, Brahim Aïssa, Maulid M. Kivambe, Nouar Tabet, Mathieu Boccard, and Christophe Ballif. "Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates." In SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049262.

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Viana, Bruno, Thierry Pauporte, and S. Qi. "Low temperature electrodeposition of silicon layers." In Oxide-based Materials and Devices IX, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2018. http://dx.doi.org/10.1117/12.2294944.

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Maroutian, Thomas. "Doped zirconia oxides for silicon photonics." In Oxide-based Materials and Devices XII, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2021. http://dx.doi.org/10.1117/12.2591156.

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Olenych, I., L. Monastyrskii, and B. Sokolovskii. "Electrical properties of silicon oxide nanocomposites of porous silicon." In 2014 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE, 2014. http://dx.doi.org/10.1109/omee.2014.6912357.

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Nayak, Mrutyunjay, Ashutosh Pandey, Sourav Mandal, and Vamsi K. Komarala. "Nickel oxide-based hole-selective contact silicon heterojunction solar cells." In SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics. AIP Publishing, 2022. http://dx.doi.org/10.1063/5.0089230.

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Roschuk, Tyler R., Jacek Wojcik, Edward A. Irving, Michael Flynn, and Peter Mascher. "Silicon nanocrystal formation in silicon-rich silicon oxide thin films." In Photonics North, edited by John C. Armitage, Simon Fafard, Roger A. Lessard, and George A. Lampropoulos. SPIE, 2004. http://dx.doi.org/10.1117/12.567458.

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MIYASAKA, Mitsutoshi, Wataru ITOH, Tadakazu KOMATSU, Ichio YUDASAKA, and Hiroyuki OHSHIMA. "Wettability of Silicon Oxide by Poly-Crystalline Silicon." In 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.pc-1-10.

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Persans, Peter D., and B. Abeles. "Optical properties of microcrystalline silicon/silicon oxide multilayers." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/oam.1987.tuu2.

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We report optical absorption and electroabsorption measurements on silicon microcrystallites with dimensions from 40 to 100 Å. Silicon microcrystals of well-defined dimensions were prepared by thermal annealing of periodic amorphous multilayers consisting of amorphous silicon and silicon dioxide sublayers prepared by plasma-assisted chemical vapor deposition. The crystallite size is controlled by the thickness of the amorphous silicon sublayers. This novel class of material possesses many properties intermediate between bulk crystals and disordered or amorphous materials. Optical absorption for hν < 3 eV is significantly higher than that of bulk crystals possibly due to absorption in interstitial material between crystallites. Relaxation of Δk = 0 crystal momentum rules for optical transitions leads to broadening and shift of critical points in optical modulation spectra. Quantum confinement of electronic states may also lead to energy shifts in optical spectra.
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Reports on the topic "Silicon oxide"

1

Mangin, Christophe. R-Curve Behavior for Silicon Carbide Whisker Reinforced Aluminum Oxide Composites. Fort Belvoir, VA: Defense Technical Information Center, January 1990. http://dx.doi.org/10.21236/ada233958.

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Cooper, James A., and Jr. Investigation of Jet Vapor Deposited (JVD) Silicon Oxide/Nitride/Oxide (ONO) Films as Gate Dielectrics for SiC and GaN Devices. Fort Belvoir, VA: Defense Technical Information Center, March 2003. http://dx.doi.org/10.21236/ada413131.

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Alan Ludwiszewski. Silicon Based Solid Oxide Fuel Cell Chip for Portable Consumer Electronics -- Final Technical Report. Office of Scientific and Technical Information (OSTI), June 2009. http://dx.doi.org/10.2172/958075.

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Griffin, Timothy E. Pulsed Capacitance Measurement of Silicon Carbide (SiC) Schottky Diode and SiC Metal Oxide Semiconductor. Fort Belvoir, VA: Defense Technical Information Center, November 2006. http://dx.doi.org/10.21236/ada458317.

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HO, PAULINE, JUSTINE E. JOHANNES, RICHARD J. BUSS, and ELLEN MEEKS. Chemical Reaction Mechanisms for Modeling the Fluorocarbon Plasma Etch of Silicon Oxide and Related Materials. Office of Scientific and Technical Information (OSTI), May 2001. http://dx.doi.org/10.2172/782704.

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Xu, Yang. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS). Fort Belvoir, VA: Defense Technical Information Center, January 2014. http://dx.doi.org/10.21236/ada596171.

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Ciniculk, M. K. Design, microstructure, and high-temperature behavior of silicon nitride sintered with rate-earth oxides. Office of Scientific and Technical Information (OSTI), August 1991. http://dx.doi.org/10.2172/5206386.

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Kraus, George. Mesoporous Silica-Supported Metal Oxide-Promoted Rh Nanocatalyst for Selective Production of Ethanol from Syngas. Office of Scientific and Technical Information (OSTI), September 2010. http://dx.doi.org/10.2172/1030556.

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GARDNER, TIMOTHY J., LINDA I. MCLAUGHLIN, DEBORAH L. MOWERY, and RONALD S. SANDOVAL. Preparation Effects on the Performance of Silica-Doped Hydrous Titanium Oxide (HTO:Si)-Supported Pt Catalysts for Lean-Burn NOx Reduction by Hydrocarbons. Office of Scientific and Technical Information (OSTI), January 2002. http://dx.doi.org/10.2172/793222.

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10

Brossia. L52119 Comparative Consumption Rates of Impressed Current Cathodic Protection Anodes. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), January 2004. http://dx.doi.org/10.55274/r0010953.

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There is a variety of impressed current anode materials available for onshore applications, including High Silicon Cast Iron (HSCI), Mixed Metal Oxides (MMO), graphite, platinum (or platinum coated titanium), and conductive polymers. Many end users simply select the anode material that they have experience with. What is lacking is a clear, direct comparison of relative anode consumption rates conducted under identical conditions. The present study examined the behavior of the various anode types under different current loads and soil conditions in an effort to establish baseline consumption rates under controlled conditions. Variables that were examined included soil resistivity, the presence of coke backfill, current load, and soil type (sand or 50/50 clay/sand mix). The consumption rates of the anodes evaluated decreased in the order of: AnodeFlex, HSCI, Graphite, Pt, and MMO. A survey of field experiences yielded a slightly different order in terms of anode life with Graphite and HSCI lasting the longest. However, given the wide range of anode sizes used in the various field sites, it is difficult to directly link the field results to the consumption rates measured in the laboratory. Soil composition and resistivity were not observed to have a significant influence on anode consumption rates. The presence of coke, however, led to a decrease in consumption for all anodes in some cases by as much as a factor of nearly 70. Utilizing anode cost estimates and neglecting installation costs, the life-cycle material costs for MMO and Pt anodes are much lower than the other anode materials. Furthermore, AnodeFlex was noted to be the highest cost system from a materials perspective. This may be slightly misleading since installation and replacement costs are not factored in. Given that the installation of AnodeFlex is often much easier and less expensive than the other anode types, this may prove to be a viable financial decision when the other factors are considered. ����������� The primary implications of the present study are: Despite higher material costs, MMO and Pt anodes may offer significant long-term cost savings as compared to other anode types for many applications Use of coke backfill is critical to ensure lower anode consumption rates for AnodeFlex, Graphite, and to a lesser extent HSCI; coke does not appear necessary for MMO or Pt Soil composition (sand vs. clay/sand mix) and resistivity do not appear to significantly influence anode consumption rates, thus consideration of the soil environment (except groundwater chemistry) is not needed in selection of an appropriate anode Because the influence of groundwater chemistry (as part of the soil environment) was not examined, the effects of sulfate, chloride, and pH will need to be evaluated in detail to better aid in anode material selection Field use survey responses showed a wide range in observed anode lifespan, with graphite and HSCI experiencing the longest life and cable anodes the shortest The field survey also revealed that a significant cause of anode failures was connector and cable problems
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