Journal articles: 'Silicon optical waveguides'

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Matsuda, Nobuyuki, and Hiroki Takesue. "Generation and manipulation of entangled photons on silicon chips." Nanophotonics 5, no. 3 (August 1, 2016): 440–55. http://dx.doi.org/10.1515/nanoph-2015-0148.

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AbstractIntegrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

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Huong, Nguyen Thanh, Nguyen Van Chinh, and Chu Manh Hoang. "Wedge Surface Plasmon Polariton Waveguides Based on Wet-Bulk Micromachining." Photonics 6, no. 1 (February 27, 2019): 21. http://dx.doi.org/10.3390/photonics6010021.

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In this paper, we propose and investigate the modal characteristics of wedge surface plasmon polariton (SPP) waveguides for guiding surface plasmon waves. The wedge SPP waveguides are composed of a silver layer deposited onto the surface of a wedge-shaped silicon dielectric waveguide. The wedge-shaped silicon dielectric waveguides are explored from the anisotropic wet etching property of single crystal silicon. The wedge SPP waveguides are embedded in a dielectric medium to form the metal–dielectric interface for guiding the surface plasmon waves. The propagation characteristics of the wedge SPP waveguides at the optical telecommunication wavelength of 1.55 μm are evaluated by a numerical simulation. The influence of the physical parameters such as the dimensions of the wedge SPP waveguide and the refractive index of the dielectric medium on the propagation of the surface plasmon wave is investigated. In addition, by comparing the propagation characteristics, we derive the wedge SPP waveguide with the optimal performance.

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Manaf, N. Aina C., Mohd Hanapiah M. Yusoff, and M. Kamil Abd-Rahman. "Optimized Nano-Slot Silicon Waveguide Structures for Optical Sensing Applications." Advanced Materials Research 832 (November 2013): 212–17. http://dx.doi.org/10.4028/www.scientific.net/amr.832.212.

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In this paper, an investigation of optimized vertical and non-vertical nano-slot silicon waveguides with different cover media (cladding) is presented. The mode properties and light confining effects for both of these slot waveguides geometry are investigated at operating wavelength of 1550nm. Light propagation of waveguide modal profiles for electric field and intensity of such slot waveguides are also presented.

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Densmore, A., D. X. Xu, S. Janz, P. Waldron, J. Lapointe, T. Mischki, G. Lopinski, A. Delâge, J. H. Schmid, and P. Cheben. "Sensitive Label-Free Biomolecular Detection Using Thin Silicon Waveguides." Advances in Optical Technologies 2008 (June 16, 2008): 1–9. http://dx.doi.org/10.1155/2008/725967.

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We review our work developing optical waveguide-based evanescent field sensors for the label-free, specific detection of biological molecules. Using high-index-contrast silicon photonic wire waveguides of submicrometer dimension, we demonstrate ultracompact and highly sensitive molecular sensors compatible with commercial spotting apparatus and microfluidic-based analyte delivery systems. We show that silicon photonic wire waveguides support optical modes with strong evanescent field at the waveguide surface, leading to strong interaction with surface bound molecules for sensitive response. Furthermore, we present new sensor geometries benefiting from the very small bend radii achievable with these high-index-contrast waveguides to extend the sensing path length, while maintaining compact size. We experimentally demonstrate the sensor performance by monitoring the adsorption of protein molecules on the waveguide surface and by tracking small refractive index changes of bulk solutions.

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Bondarenko, Siegfried, Claus Villringer, and Patrick Steglich. "Comparative Study of Nano-Slot Silicon Waveguides Covered by Dye Doped and Undoped Polymer Cladding." Applied Sciences 9, no. 1 (December 27, 2018): 89. http://dx.doi.org/10.3390/app9010089.

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Nonlinear optical dyes doped in optical polymer matrices are widely used for electro-optical devices. Linear optical properties change with dye concentration, which leads to a change in modal properties, especially in nano-structured integrated waveguides such as silicon slot-waveguides. Here, we investigate the influence of a nonlinear optical dye on the performance of a silicon-organic hybrid slot-waveguide. A simulation study of the modal and optical confinement properties is carried out and dependence of the structural parameters of the slot-waveguide and the organic cladding material is taken into account. As cladding material, a guest-host polymer system is employed comprising the nonlinear optical dye Disperse Red 1 (DR1) doped in a poly[methyl methacrylate] (PMMA) matrix. The refractive indices of doped and undoped PMMA were deduced from ellipsometric data. We present a guideline for an optimized slot-waveguide design for the fabrication in silicon-on-insulator technology giving rise to scalable, high-performance integrated electro-optical modulators.

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Feng, Song, and Bin Xue. "Research into Two Photonic-Integrated Waveguides Based on SiGe Material." Materials 13, no. 8 (April 16, 2020): 1877. http://dx.doi.org/10.3390/ma13081877.

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SiGe (Silicon Germanium) is a common semiconductor material with many excellent properties, and many photonic-integrated devices are designed and fabricated with SiGe material. In this paper, two photonic-integrated SiGe waveguides are researched, namely the SiGe-SOI (Silicon Germanium-Silicon-On-Insulator) waveguide and the SiGe-OI (Silicon Germanium-On-Insulator) waveguide. In order to verify which structure has the better waveguide performance, two waveguide structures are built, and the effective refractive indexes and the loss characteristics of the two waveguides are analyzed and compared. By simulation, the SiGe-OI optical waveguide has better losses characteristics at a wavelength of 1.55 μm. Finally, SiGe-OI and SiGe-SOI waveguides are fabricated and tested to verify the correctness of theoretical analysis, and the experimental results show that the transmission losses of the SiGe-OI waveguide are respectively decreased by 36.6% and 28.3% at 400 nm and 600 nm waveguide width in comparison with the SiGe-SOI waveguide. The results also show that the SiGe-OI waveguide has better loss characteristics than those of the SiGe-SOI waveguide at the low Ge content.

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Mahmudin, Dadin, Shobih, Pamungkas Daud, and Yusuf Nur Wijayanto. "Fabrication of Polyimide Optical Waveguide on Silicon Dioxide Layer Stacked Silicon Substrate." Jurnal Elektronika dan Telekomunikasi 17, no. 2 (December 31, 2017): 36. http://dx.doi.org/10.14203/jet.v17.36-41.

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Optical waveguides are important for guiding lightwave from a place to other places. Propagation and insertion losses of the optical waveguides should be considered to be in low values. Recently, optical waveguides with circular structures, which are optical fibers, are used widely for guiding lightwave in long-distance optical communication with very low propagation and insertion losses. Simultaneously, optical waveguides with planar structure are also developed for short distance communication in optical devices. We have reported design and analysis of the planar optical waveguides. In this paper, fabrication of planar optical waveguides using a polyimide material on thin silicon dioxide combined with the silicon substrate is reported. The polyimide material is used for the core of the optical waveguides. The silicon dioxide located on the silicon substrate and the air is used for cladding of the optical waveguides. Fabrication of the optical waveguides such as oxidation, photoresist coating, masking, ultra-violet exposure, and etching was done. The fabricated optical waveguides were characterized physically using a standard microscope and scanning electron microscope (SEM). The fabrication processes and characterization results are reported and discussed in detail.

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Sun, Siwei, Ying Chen, Yu Sun, Fengman Liu, and Liqiang Cao. "Novel Low-Loss Fiber-Chip Edge Coupler for Coupling Standard Single Mode Fibers to Silicon Photonic Wire Waveguides." Photonics 8, no. 3 (March 16, 2021): 79. http://dx.doi.org/10.3390/photonics8030079.

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Fiber-to-chip optical interconnects is a big challenge in silicon photonics application scenarios such as data centers and optical transmission systems. An edge coupler, compared to optical grating, is appealing to in the application of silicon photonics due to the high coupling efficiency between standard optical fibers (SMF-28) and the sub-micron silicon wire waveguides. In this work, we proposed a novel fiber–chip edge coupler approach with a large mode size for silicon photonic wire waveguides. The edge coupler consists of a multiple structure which was fulfilled by multiple silicon nitride layers embedded in SiO2 upper cladding, curved waveguides and two adiabatic spot size converter (SSC) sections. The multiple structure can allow light directly coupling from large mode size fiber-to-chip coupler, and then the curved waveguides and SSCs transmit the evanescent field to a 220 nm-thick silicon wire waveguide based on the silicon-on-insulator (SOI) platform. The edge coupler, designed for a standard SMF-28 fiber with 8.2 μm mode field diameter (MFD) at a wavelength of 1550 nm, exhibits a mode overlap efficiency exceeding 95% at the chip facet and the overall coupling exceeding 90%. The proposed edge coupler is fully compatible with standard microfabrication processes.

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La Porta, Antonio, Jonas Weiss, Roger Dangel, Daniel Jubin, Norbert Meier, Folkert Horst, and Bert Jan Offrein. "Broadband and scalable optical coupling for silicon photonics using polymer waveguides." Advanced Optical Technologies 7, no. 1-2 (April 25, 2018): 107–13. http://dx.doi.org/10.1515/aot-2017-0064.

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AbstractWe present optical coupling schemes for silicon integrated photonics circuits that account for the challenges in large-scale data processing systems such as those used for emerging big data workloads. Our waveguide based approach allows to optimally exploit the on-chip optical feature size, and chip- and package real-estate. It further scales well to high numbers of channels and is compatible with state-of-the-art flip-chip die packaging. We demonstrate silicon waveguide to polymer waveguide coupling losses below 1.5 dB for both the O- and C-bands with a polarisation dependent loss of <1 dB. Over 100 optical silicon waveguide to polymer waveguide interfaces were assembled within a single alignment step, resulting in a physical I/O channel density of up to 13 waveguides per millimetre along the chip-edge, with an average coupling loss of below 3.4 dB measured at 1310 nm.

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Alvarado, M. A., M. V. Pelegrini, I. Pereyra, T. A. A. de Assumpção, L. R. P. Kassab, and M. I. Alayo. "Fabrication and characterization of aluminum nitride pedestal-type optical waveguide." Canadian Journal of Physics 92, no. 7/8 (July 2014): 951–54. http://dx.doi.org/10.1139/cjp-2013-0587.

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In this paper we present the fabrication and characterization of pedestal-type optical waveguides using aluminum nitride (AlN) as core layer. To the best knowledge of the authors, the utilization of AlN as core layer in pedestal-type waveguides has not been studied. The AlN thin films were obtained by radio frequency reactive magnetron sputtering from a pure aluminum target. The AlN refractive index was determined by ellipsometry. The optical waveguides were fabricated by the pedestal technique, which consists in etching the silicon oxide lower cladding layer before depositing the core layer. Thus, the waveguide geometrical definition is simplified because etching the AlN core is not necessary. AlN thin films of 0.6, 1, and 1.2 μm thick were deposited on thermally grown silicon dioxide using crystalline silicon (100) as substrate. The pedestal profile was defined using conventional photolithography, followed by plasma etching of the cladding layer. Optical propagation losses were measured for pedestal heights of 1 μm and widths from 1 to 100 μm.

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Khorasaninejad, M., and S. S. Saini. "Bend Waveguides on Silicon Nanowire Optical Waveguide (SNOW)." IEEE Photonics Journal 3, no. 4 (August 2011): 696–702. http://dx.doi.org/10.1109/jphot.2011.2160527.

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Shang, Hongpeng, Degui Sun, Peng Yu, Bin Wang, Ting Yu, Tiancheng Li, and Huilin Jiang. "Investigation for Sidewall Roughness Caused Optical Scattering Loss of Silicon-on-Insulator Waveguides with Confocal Laser Scanning Microscopy." Coatings 10, no. 3 (March 4, 2020): 236. http://dx.doi.org/10.3390/coatings10030236.

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Sidewall roughness-caused optical loss of waveguides is one of the critical limitations to the proliferation of the silicon photonic integrated circuits in fiber-optic communications and optical interconnects in computers, so it is imperative to investigate the distribution characteristics of sidewall roughness and its impact upon the optical losses. In this article, we investigated the distribution properties of waveguide sidewall roughness (SWR) with the analysis for the three-dimensional (3-D) SWR of dielectric waveguides, and, then the accurate SWR measurements for silicon-on-insulator (SOI) waveguide were carried out with confocal laser scanning microscopy (CLSM). Further, we composed a theoretical/experimental combinative model of the SWR-caused optical propagation loss. Consequently, with the systematic simulations for the characteristics of optical propagation loss of SOI waveguides, the two critical points were found: (i) the sidewall roughness-caused optical loss was synchronously dependent on the correlation length and the waveguide width in addition to the SWR and (ii) the theoretical upper limit of the correlation length was the bottleneck to compressing the roughness-induced optical loss. The simulation results for the optical loss characteristics, including the differences between the TE and TM modes, were in accord with the experimental data published in the literature. The above research outcomes are very sustainable to the selection of coatings before/after the SOI waveguide fabrication.

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Kotb, Amer, and Kyriakos E. Zoiros. "K-Shaped Silicon Waveguides for Logic Operations at 1.55 μm." Electronics 11, no. 22 (November 15, 2022): 3748. http://dx.doi.org/10.3390/electronics11223748.

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Silicon has properties that make it the preferable semiconductor material for realizing a wide suite of electronic devices. In this paper, all basic optical logic operations, including XOR, AND, OR, NOT, NOR, XNOR, and NAND, are demonstrated by means of simulation using K-shaped compact silicon waveguides operated at the 1.55 μm telecommunications wavelength. This waveguide comprises three waveguide strips, all made of silicon printed on silica. By adjusting the phase of the incident beams, the pursued logic operations can be realized. To evaluate how well the considered operations are performed, the contrast ratio (CR) is employed as a figure of merit. Compared to other reported waveguides, the suggested K-shaped waveguide achieves higher CRs and a speed of the order of 120 Gb/s.

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M. Alatwi, Aadel, and Ahmed Nabih Zaki Rashed. "An analytical method with numerical results to be used in the design of optical slab waveguides for optical communication system applications." Indonesian Journal of Electrical Engineering and Computer Science 21, no. 1 (January 1, 2021): 278. http://dx.doi.org/10.11591/ijeecs.v21.i1.pp278-286.

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<p>This study develops an analytical method with numerical results for the design of optical slab waveguides for optical communication system applications. An optical slab waveguide structure made of silicon on silicon dioxide material is designed and analyzed. The effective index of the mode is studied against variations in the waveguide dimensions. Transmission and reflection coefficients are studied and compared to the wavelength and dimensions of the waveguide. Variations are sketched with the x-axis, in addition to the electric field intensity distribution and effective refractive index. Waveguide bending loss is also studied with waveguide thickness and length variations within three waveguide transmission windows of 850 nm, 1300 nm, and 1550 nm.</p>

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Haroon, Hazura, Hanim Abdul Razak, Anis Suhaila Mohd Zain, and Najimiah Radiah Mohamad. "Optimization of Silicon-Based Fabrication Process Modeling for Optical Modulator." Materials Science Forum 846 (March 2016): 230–36. http://dx.doi.org/10.4028/www.scientific.net/msf.846.230.

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Silicon-based photonic devices have emerged as a high demand technology for a wide range of applications. Most of these devices can be realized by optical waveguides where it forms the basic structure for device construction. This project involved the optimization of silicon waveguide fabrication process modeling using Silvaco. The optimized silicon-based waveguide components are aimed to be implemented in future photonic devices such as optical modulators. The Taguchi methods are employed to study the influence of fabrication parameters variations on the fabrication performance such as etch rate and waveguide structure. Four fabrication parameters are investigated includes the diffusion temperature of the N - type channel, diffusion temperature of the P - type channel, silicon orientation and oxide thickness. The result shows that the temperature during the diffusion on an N - type channel has the most influence on the performance of the modulation efficiency of the silicon optical waveguide.

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Schmid, J. H., P. Cheben, S. Janz, J. Lapointe, E. Post, A. Delâge, A. Densmore, B. Lamontagne, P. Waldron, and D. X. Xu. "Subwavelength Grating Structures in Silicon-on-Insulator Waveguides." Advances in Optical Technologies 2008 (July 13, 2008): 1–8. http://dx.doi.org/10.1155/2008/685489.

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First implementations of subwavelength gratings (SWGs) in silicon-on-insulator (SOI) waveguides are discussed and demonstrated by experiment and simulations. The subwavelength effect is exploited for making antireflective and highly reflective waveguide facets as well as efficient fiber-chip coupling structures. We demonstrate experimentally that by etching triangular SWGs into SOI waveguide facets, the facet power reflectivity can be reduced from 31% to <2.5%. Similar structures using square gratings can also be used to achieve high facet reflectivity. Finite difference time-domain simulations show that >94% facet reflectivity can be achieved with square SWGs for 5 μm thick SOI waveguides. Finally, SWG fiber-chip couplers for SOI photonic wire waveguides are introduced, including design, simulation, and first experimental results.

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Cui, Luna, and Li Yu. "Multifunctional logic gates based on silicon hybrid plasmonic waveguides." Modern Physics Letters B 32, no. 02 (January 20, 2018): 1850008. http://dx.doi.org/10.1142/s0217984918500082.

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Nano-scale Multifunctional Logic Gates based on Si hybrid plasmonic waveguides (HPWGs) are designed by utilizing the multimode interference (MMI) effect. The proposed device is composed of three input waveguides, three output waveguides and an MMI waveguide. The functional size of the device is only 1000 nm × 3200 nm, which is much smaller than traditional Si-based all-optical logic gates. By setting different input signals and selecting suitable threshold value, OR, AND, XOR and NOT gates are achieved simultaneously or individually in a single device. This may provide a way for ultrahigh speed signal processing and future nanophotonic integrated circuits.

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Tran, Minh, Duanni Huang, Tin Komljenovic, Jonathan Peters, Aditya Malik, and John Bowers. "Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics." Applied Sciences 8, no. 7 (July 13, 2018): 1139. http://dx.doi.org/10.3390/app8071139.

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Integrated ultra-low-loss waveguides are highly desired for integrated photonics to enable applications that require long delay lines, high-Q resonators, narrow filters, etc. Here, we present an ultra-low-loss silicon waveguide on 500 nm thick Silicon-On-Insulator (SOI) platform. Meter-scale delay lines, million-Q resonators and tens of picometer bandwidth grating filters are experimentally demonstrated. We design a low-loss low-reflection taper to seamlessly integrate the ultra-low-loss waveguide with standard heterogeneous Si/III-V integrated photonics platform to allow realization of high-performance photonic devices such as ultra-low-noise lasers and optical gyroscopes.

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Itkin, I. I., A. G. Morozov, and S. M. Shandarov. "Silicon nitride optical waveguides on silicon substrates." Radiophysics and Quantum Electronics 31, no. 4 (April 1988): 354–59. http://dx.doi.org/10.1007/bf01034460.

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Zhang, Yuning, Jiayang Wu, Yunyi Yang, Yang Qu, Linnan Jia, Baohua Jia, and David J. Moss. "Enhanced Spectral Broadening of Femtosecond Optical Pulses in Silicon Nanowires Integrated with 2D Graphene Oxide Films." Micromachines 13, no. 5 (May 11, 2022): 756. http://dx.doi.org/10.3390/mi13050756.

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We experimentally demonstrate enhanced spectral broadening of femtosecond optical pulses after propagation through silicon-on-insulator (SOI) nanowire waveguides integrated with two-dimensional (2D) graphene oxide (GO) films. Owing to the strong mode overlap between the SOI nanowires and the GO films with a high Kerr nonlinearity, the self-phase modulation (SPM) process in the hybrid waveguides is significantly enhanced, resulting in greatly improved spectral broadening of the femtosecond optical pulses. A solution-based, transfer-free coating method is used to integrate GO films onto the SOI nanowires with precise control of the film thickness. Detailed SPM measurements using femtosecond optical pulses are carried out, achieving a broadening factor of up to ~4.3 for a device with 0.4-mm-long, 2 layers of GO. By fitting the experimental results with the theory, we obtain an improvement in the waveguide nonlinear parameter by a factor of ~3.5 and in the effective nonlinear figure of merit (FOM) by a factor of ~3.8, relative to the uncoated waveguide. Finally, we discuss the influence of GO film length on the spectral broadening and compare the nonlinear optical performance of different integrated waveguides coated with GO films. These results confirm the improved nonlinear optical performance of silicon devices integrated with 2D GO films.

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Jaturaphagorn, Pawaphat, Papichaya Chaisakul, Nattaporn Chattham, and Pichet Limsuwan. "Investigation on optical integration between LED Mid-IR light sources and Si-based waveguides for sensing applications." Journal of Physics: Conference Series 2145, no. 1 (December 1, 2021): 012056. http://dx.doi.org/10.1088/1742-6596/2145/1/012056.

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Abstract Research on mid-IR silicon-based waveguides has recently received strong interest. Particularly, this paper focuses on one of the critical issues in micron-scale photonic integrated circuits, which is to efficiently couple a mid-IR LED (light emitting diode) light source to an external micron-scale waveguide. The optical coupling scheme is crucial for the exploitation of LED light sources in waveguide-based spectroscopic sensing applications. This paper reports optical coupling scheme between an LED mid-IR light source and a silicon rich silicon nitride (SiN) waveguide that could enable the use of LED-based light sources. Finally, the detection limit of the investigated device for carbon dioxide gas detection is calculated.

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Soref, Richard A., and Kenneth J. Ritter. "Silicon antiresonant reflecting optical waveguides." Optics Letters 15, no. 14 (July 15, 1990): 792. http://dx.doi.org/10.1364/ol.15.000792.

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Yokoyama, S., T. Nagata, Y. Kuroda, T. Doi, T. Namba, K. Miyake, T. Miyamoto, S. Miyazaki, M. Koyanagi, and M. Hirose. "Optical waveguides on silicon chips." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13, no. 3 (May 1995): 629–35. http://dx.doi.org/10.1116/1.579797.

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Loni, A., L. T. Canham, M. G. Berger, R. Arens-Fischer, H. Munder, H. Luth, H. F. Arrand, and T. M. Benson. "Porous silicon multilayer optical waveguides." Thin Solid Films 276, no. 1-2 (April 1996): 143–46. http://dx.doi.org/10.1016/0040-6090(95)08075-9.

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Hong, Yaping, Yixiao Hong, Jianxun Hong, and Guo-Wei Lu. "Dispersion Optimization of Silicon Nitride Waveguides for Efficient Four-Wave Mixing." Photonics 8, no. 5 (May 11, 2021): 161. http://dx.doi.org/10.3390/photonics8050161.

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Silicon nitride waveguides have emerged as an excellent platform for photonic applications, including nonlinear optical signal processing, owing to their relatively high Kerr nonlinearity, negligible two photon absorption, and wide transparent bandwidth. In this paper, we propose an effective approach using 3D finite element method to optimize the dispersion characteristics of silicon nitride waveguides for four-wave mixing (FWM) applications. Numerical studies show that a flat and low dispersion profile can be achieved in a silicon nitride waveguide with the optimized dimensions. Near-zero dispersion of 1.16 ps/km/nm and 0.97 ps/km/nm at a wavelength of 1550 nm are obtained for plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD) silicon nitride waveguides, respectively. The fabricated micro-ring resonator with the optimized dimensions exhibits near-zero dispersion of −0.04 to −0.1 ps/m/nm over a wavelength range of 130 nm which agrees with the numerical simulation results. FWM results show that near-zero phase mismatch and high conversion efficiencies larger than −12 dB using a low pump power of 0.5 W in a 13-cm long silicon nitride waveguide are achieved.

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De Leonardis, Francesco, and Vittorio M. N. Passaro. "Dispersion Engineered Silicon Nanocrystal Slot Waveguides for Soliton Ultrafast Optical Processing." Advances in OptoElectronics 2011 (August 15, 2011): 1–9. http://dx.doi.org/10.1155/2011/751498.

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We propose, for the first time to our knowledge, the theoretical investigation of silicon nanocrystals-based sandwiched slot waveguides which are dispersion-engineered for exciting optical solitons inside very short structures (only 1.2 mm long). Several parametric simulations have been performed by means of finite element method in order to individuate the best waveguide cross-sections for achieving an anomalous dispersion regime around 1550 nm.

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Butt, Muhammad Ali, and Nikolai Lvovich Kazansky. "SOI Suspended membrane waveguide at 3.39 µm for gas sensing application." Photonics Letters of Poland 12, no. 2 (July 1, 2020): 67. http://dx.doi.org/10.4302/plp.v12i2.1034.

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In this letter, we present a numerical study on the designing of silicon-on-insulator (SOI) suspended membrane waveguide (SMW). The waveguide geometry is optimized at 3.39 µm TE-polarized light which is the absorption line of methane gas by utilizing a 3D finite element method (FEM). The transmission loss (TL) and evanescent field ratio (EFR) of the waveguide are calculated for different geometric parameters such as the width of core, the height of core and period of the cladding. We found out that TL is directly related to EFR. Therefore, a waveguide geometry can be designed which can offer high EFR at the cost of high TL or low EFR with low TL, as desired. Based on the geometric parameters used in this paper, we have obtained a TL and EFR which lies in the range of 1.54 dB-3.37 dB and 0.26-0.505, respectively. Full Text: PDF ReferencesL. Vivien et al., "High speed silicon-based optoelectronic devices on 300mm platform", 2014 16th International conference on transparent optical networks (ICTON), Graz, 2014, pp. 1-4, CrossRef Y. Zou, S. Chakravarty, "Mid-infrared silicon photonic waveguides and devices [Invited]", Photonic Research, 6(4), 254-276 (2018). CrossRef J.S. Penades et al., "Suspended SOI waveguide with sub-wavelength grating cladding for mid-infrared", Optics letters, 39(19), 5661-5664 (2014). CrossRef T. Baehr-Jones, A. Spott, R. Ilic, A. Spott, B. Penkov, W. Asher, and M. Hochberg, "Silicon-on-sapphire integrated waveguides for the mid-infrared", Opt. Express, 18(12),12127-12135 (2010). CrossRef J. Mu, R. Soref, L. C. Kimerling, and J. Michel, "Silicon-on-nitride structures for mid-infrared gap-plasmon waveguiding", Appl. Phys. Lett., 104(3), 031115 (2014). CrossRef J.S. Penades et al., "Suspended silicon waveguides for long-wave infrared wavelengths", Optics letters, 43 (4), 795-798 (2018). CrossRef J.S. Penades et al., "Suspended silicon mid-infrared waveguide devices with subwavelength grating metamaterial cladding", Optics Express, 24, (20), 22908-22916 (2016). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazanskiy, "Modelling of Rib channel waveguides based on silicon-on-sapphire at 4.67 μm wavelength for evanescent field gas absorption sensor", Optik, 168, 692-697 (2018). CrossRef S.N. Khonina, N.L. Kazanskiy, M.A. Butt, "Evanescent field ratio enhancement of a modified ridge waveguide structure for methane gas sensing application", IEEE Sensors Journal CrossRef M.A. Butt, S.A. Degtyarev, S.N. Khonina, N.L. Kazanskiy, "An evanescent field absorption gas sensor at mid-IR 3.39 μm wavelength", Journal of Modern Optics, 64(18), 1892-1897 (2017). CrossRef S. Zampolli et al., "Selectivity enhancement of metal oxide gas sensors using a micromachined gas chromatographic column", Sensors and Actuators B Chemical, 105 (2), 400-406 (2005). CrossRef N. Dossi, R. Toniolo, A. Pizzariello, E. Carrilho, E. Piccin, S. Battiston, G. Bontempelli, "An electrochemical gas sensor based on paper supported room temperature ionic liquids", Lab Chip, 12 (1), 153-158 (2011). CrossRef V. Avetisov, O. Bjoroey, J. Wang, P. Geiser, K. G. Paulsen, "Hydrogen Sensor Based on Tunable Diode Laser Absorption Spectroscopy", Sensors, 19 (23), 5313 (2019). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazanskiy, "Silicon on silicon dioxide slot waveguide evanescent field gas absorption sensor", Journal of Modern Optics, 65(2), 174-178 (2018). CrossRef Nikolay Lvovich Kazanskiy, Svetlana Nikolaevna Khonina, Muhammad Ali Butt, "Subwavelength Grating Double Slot Waveguide Racetrack Ring Resonator for Refractive Index Sensing Application", Sensors, 20, 3416 (2020). CrossRef H. Tai, H. Tanaka, T. Yoshino, "Fiber-optic evanescent-wave methane-gas sensor using optical absorption for the 3.392-μm line of a He–Ne laser", Opt. Lett., 12, 437-439 (1987). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazanskiy, "Hybrid plasmonic waveguide-assisted Metal–Insulator–Metal ring resonator for refractive index sensing", Journal of Modern Optics, 65(9), 1135-1140 (2018). CrossRef S.A. Degtyarev, M.A. Butt, S.N. Khonina, R.V. Skidanov, "Modelling of TiO2 based slot waveguides with high optical confinement in sharp bends", 2016 International Conference on Computing, Electronic and Electrical Engineering, ICE Cube, Quetta, 2016, 10-13 CrossRef

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Dietz, Jonathan R., and Evelyn L. Hu. "Optical and strain stabilization of point defects in silicon carbide." Applied Physics Letters 120, no. 18 (May 2, 2022): 184001. http://dx.doi.org/10.1063/5.0087805.

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The photoluminescence and spin properties of ensembles of color centers in silicon carbide are enhanced by fabricating optically isolated slab waveguide structures and carefully controlling annealing and cooling conditions. We find that the photoluminescence signal of an ensemble of implanted defects is enhanced in slab waveguides by an order of magnitude over identically implanted bulk defects. The slab waveguide-enhanced photoluminescence of several defect species is used to study recombination and diffusion in the presence of thermal annealing with both rapid quench cooling and a longer return to ambient conditions. The confined mechanical geometry of a thin film is exploited to measure the spin-strain coupling of the negatively charged silicon monovacancy. The methods in this work can be used to exercise greater control on near-surface emitters in silicon carbide and better understand and control the effects of strain on spin measurements of silicon carbide based color centers.

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Kaźmierczak, Andrzej, Mateusz Słowikowski, Krystian Pavłov, Maciej Filipiak, and Ryszard Piramidowicz. "Polymer micro-lenses as an long-coupling-distance interfacing layer in low-cost optical coupling solution between optical fibers and photonic integrated waveguide circuits." Photonics Letters of Poland 11, no. 4 (December 31, 2019): 121. http://dx.doi.org/10.4302/plp.v11i4.964.

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We present a low-cost scheme for non-permanent optical signal coupling for prospective application in single use photonic integrated chips. The proposed scheme exploits the use of polymer kinoform microlenses. The feasibility of the proposed solution is demonstrated by the experimental investigation of the optical signal coupling from single mode optical fiber (SMF) to the test structure of SixNy integrated waveguide. Full Text: PDF ReferencesM. Smit et al., "An introduction to InP-based generic integration technology," Semiconductor Science and Technology, 29 (8), 083001, 2014 CrossRef R. Baets et al., "Silicon Photonics: silicon nitride versus silicon-on-insulator," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optical Society of America, 2016), paper Th3J.1. CrossRef K. Shiraishi et al., "A silicon-based spot-size converter between single-mode fibers and Si-wire waveguides using cascaded tapers," Appl. Phys. Lett. 91, 141120 (2007) CrossRef Y. Sobu et al., "GaInAsP/InP waveguide dual core spot size converter for optical fiber,"IEEE Photonic Society 24th Annual Meeting, 469-470, (2011). CrossRef F. Van Laere et al., "Compact and Highly Efficient Grating Couplers Between Optical Fiber and Nanophotonic Waveguides," Journal of Lightwave Technology, vol. 25, no. 1, pp. 151-156, Jan. 2007. CrossRef A. Kaźmierczak et al., "Light coupling and distribution or Si3N4/SiO2 integrated multichannel single mode sensing system," Opt. Eng. 48, 2009, pp. 014401 CrossRef M. Rossi et al., "Arrays of anamorphic phase-matched Fresnel elements for diode-to-fiber coupling," Appl. Opt. 34, 2483-2488 (1995) CrossRef M. Prasciolu et al, "Fabrication of Diffractive Optical Elements On-Fiber for Photonic Applications by Nanolitography," Japanese Journal of Applied Physics, Volume 42, (2003) CrossRef F.Schiappelli et al., "Efficient fiber-to-waveguide coupling by a lens on the end of the optical fiber fabricated by focused ion beam milling" Microelectronic Engineering Volumes 73-74, pp.397-404 (2004) CrossRef

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Qu, Yang, Yunyi Yang, Jiayang Wu, Yuning Zhang, Linnan Jia, Houssein El Dirani, Romain Crochemore, et al. "Photo-Thermal Tuning of Graphene Oxide Coated Integrated Optical Waveguides." Micromachines 13, no. 8 (July 28, 2022): 1194. http://dx.doi.org/10.3390/mi13081194.

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We experimentally investigate power-sensitive photo-thermal tuning (PTT) of two-dimensional (2D) graphene oxide (GO) films coated on integrated optical waveguides. We measure the light power thresholds for reversible and permanent GO reduction in silicon nitride (SiN) waveguides integrated with one and two layers of GO. For the device with one layer of GO, the power threshold for reversible and permanent GO reduction are ~20 and ~22 dBm, respectively. For the device with two layers of GO, the corresponding results are ~13 and ~18 dBm, respectively. Raman spectra at different positions of a hybrid waveguide with permanently reduced GO are characterized, verifying the inhomogeneous GO reduction along the direction of light propagation through the waveguide. The differences between the PTT induced by a continuous-wave laser and a pulsed laser are also compared, confirming that the PTT mainly depend on the average input power. These results reveal interesting features for 2D GO films coated on integrated optical waveguides, which are of fundamental importance for the control and engineering of GO’s properties in hybrid integrated photonic devices.

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Kuyken, B., F. Leo, S. Clemmen, U. Dave, R. Van Laer, T. Ideguchi, H. Zhao, et al. "Nonlinear optical interactions in silicon waveguides." Nanophotonics 6, no. 2 (March 1, 2017): 377–92. http://dx.doi.org/10.1515/nanoph-2016-0001.

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AbstractThe strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator.

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LIU, YE, HAIBIN ZHU, and CHUN JIANG. "GEOMETRY DEPENDENT ONE-WAY PROPAGATION OF LIGHT IN INTEGRATED SILICON PHOTONIC WAVEGUIDE." International Journal of Modern Physics B 28, no. 02 (December 15, 2013): 1441011. http://dx.doi.org/10.1142/s0217979214410112.

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We report a new one-way propagation effect of light which only occurs in multi-mode waveguide and can be controlled by adjusting the geometry of light source. Based on such effect, an integrated silicon waveguide composed of two planar waveguides with different thickness is proposed. The two-dimensional finite difference time domain (FDTD) simulation results show that complete signal isolation is achieved. Our results suggest that this integrated silicon waveguide may play an important role in future optical devices as long as the ideal source can be generated by the transformation optics method.

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Maiello, G., Marco Balucani, V. Bondarenko, G. De Cesare, S. La Monica, G. Masini, and A. Ferrari. "Amorphous Silicon Photodetectors for Silicon Based Optical Waveguides." Solid State Phenomena 54 (August 1997): 45–49. http://dx.doi.org/10.4028/www.scientific.net/ssp.54.45.

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Fischer, U., B. Schuppert, and K. Petermann. "Optical waveguide switches in silicon based on Ge-indiffused waveguides." IEEE Photonics Technology Letters 6, no. 8 (August 1994): 978–80. http://dx.doi.org/10.1109/68.313069.

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Yakuhina, Anastasia, Alexey Kadochkin, Vyacheslav Svetukhin, Dmitry Gorelov, Sergey Generalov, and Vladimir Amelichev. "Investigation of Side Wall Roughness Effect on Optical Losses in a Multimode Si3N4 Waveguide Formed on a Quartz Substrate." Photonics 7, no. 4 (November 7, 2020): 104. http://dx.doi.org/10.3390/photonics7040104.

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This article presents the results of the study of the influence of the most significant parameters of the side wall roughness of an ultra-thin silicon nitride lightguide layer of multimode integrated optical waveguides with widths of 3 and 8 microns. The choice of the waveguide width was made due to the need to provide multimode operation for telecommunication wavelengths, which is necessary to ensure high integration density. Scattering in waveguide structures was measured by optical frequency domain reflectometry (OFDR) of a backscattering reflectometer. The finite difference time domain method (FDTD) was used to study the effect of roughness parameters on optical losses in fabricated waveguides, the roughness parameters that most strongly affect optical scattering were determined, and methods of its significant reduction were specified. The prospects for implementing such structures on a quartz substrate are justified.

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Li, Xuefeng, Zhaolu Wang, and Hongjun Liu. "The Coupled Nonlinear Schrödinger Equations Describing Power and Phase for Modeling Phase-Sensitive Parametric Amplification in Silicon Waveguides." Journal of Applied Mathematics 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/621751.

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The coupled nonlinear Schrödinger (NLS) equations describing power and phase of the optical waves are used to model phase-sensitive (PS) parametric amplification in a width-modulated silicon-on-insulator (SOI) channel waveguide. Through solving the coupled NLS equations by the split-step Fourier and Runge-Kutta integration methods, the numerical results show that the coupled NLS equations can perfectly describe and character the PS amplification process in silicon waveguides.

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Podlucký, Ľuboš, Andrej Vincze, Soňa Kováčová, Juraj Chlpík, Jaroslav Kováč, and František Uherek. "Optimization of Fabrication Process for SiON/SiOx Films Applicable as Optical Waveguides." Coatings 11, no. 5 (May 15, 2021): 574. http://dx.doi.org/10.3390/coatings11050574.

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In this paper, the analysis of silicon oxynitride (SiON) films, deposited utilizing the plasma enhanced chemical vapor deposition (PECVD) process, for optical waveguides on silicon wafers is presented. The impact of N2O flow rate on various SiON film properties was investigated. The thickness and refractive index were measured by micro-spot spectroscopic reflectometry and confirmed by spectroscopic ellipsometry. The chemical composition of SiON films was analyzed using Secondary Ion Mass Spectrometry (SIMS). The surface roughness was analyzed using Atomic Force Microscopy (AFM). Increasing the N2O flow rate during deposition caused the deposition rate to increase and the refractive index to decrease. By changing the flow rate of gases into the chamber during the PECVD process, it is possible to precisely adjust the oxygen (O2) ratio and nitrogen (N2) ratio in the SiON film and thus control its optical properties. This was possibility utilized to fabricate SiON films suitable to serve as a waveguide core for optical waveguides with a low refractive index contrast.

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Wu Yuanda, 吴远大, 安俊明 An Junming, 李建光 Li Jianguang, 王玥 Wang Yue, 尹小杰 Yin Xiaojie, 张家顺 Zhang Jiashun, 王红杰 Wang Hongjie, and 胡雄伟 Hu Xiongwei. "Silicon Based Optical Waveguides Chemical Sensors." Acta Optica Sinica 29, no. 7 (2009): 1983–86. http://dx.doi.org/10.3788/aos20092907.1983.

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ZHAO En-ming, 赵恩铭, 雒莘梓 LUO Shen-zi, 李乐 LI Le, 刘岩鑫 LIU Yan-xin, 杨兴华 YANG Xing-hua, and 郑瑶 ZHENG Yao. "Electrospun silicon gel submicrometer optical waveguides." Optics and Precision Engineering 20, no. 6 (2012): 1282–87. http://dx.doi.org/10.3788/ope.20122006.1282.

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Takahashi, Morio, Minoru Araki, and Nobuyoshi Koshida. "Buried Optical Waveguides of Porous Silicon." Japanese Journal of Applied Physics 37, Part 2, No. 9A/B (September 15, 1998): L1017—L1019. http://dx.doi.org/10.1143/jjap.37.l1017.

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Tsang, H. K., and Y. Liu. "Nonlinear optical properties of silicon waveguides." Semiconductor Science and Technology 23, no. 6 (May 12, 2008): 064007. http://dx.doi.org/10.1088/0268-1242/23/6/064007.

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Arrand, H. F., T. M. Benson, A. Loni, M. G. Krueger, M. Thoenissen, and H. Lueth. "Self-aligned porous silicon optical waveguides." Electronics Letters 33, no. 20 (1997): 1724. http://dx.doi.org/10.1049/el:19971144.

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Sharma, Kohli, Brière, Ménard, and Nabki. "Translational MEMS Platform for Planar Optical Switching Fabrics." Micromachines 10, no. 7 (June 30, 2019): 435. http://dx.doi.org/10.3390/mi10070435.

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While 3-D microelectromechanical systems (MEMS) allow switching between a large number of ports in optical telecommunication networks, the development of such systems often suffers from design, fabrication and packaging constraints due to the complex structures, the wafer bonding processes involved, and the tight alignment tolerances between different components. In this work, we present a 2-D translational MEMS platform capable of highly efficient planar optical switching through integration with silicon nitride (SiN) based optical waveguides. The discrete lateral displacement provided by simple parallel plate actuators on opposite sides of the central platform enables switching between different input and output waveguides. The proposed structure can displace the central platform by 3.37 µm in two directions at an actuation voltage of 65 V. Additionally, the parallel plate actuator designed for closing completely the 4.26 µm air gap between the fixed and moving waveguides operates at just 50 V. Eigenmode expansion analysis shows over 99% butt-coupling efficiency the between the SiN waveguides when the gap is closed. Also, 2.5 finite-difference time-domain analysis demonstrates zero cross talk between two parallel SiN waveguides across the length of the platform for a 3.5 µm separation between adjacent waveguides enabling multiple waveguide configuration onto the platform. Different MEMS designs were simulated using static structural analysis in ANSYS. These designs were fabricated with a custom process by AEPONYX Inc. (Montreal, QC, Canada) and through the PiezoMUMPs process of MEMSCAP (Durham, NC, USA).

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Weiss, Lorenz, Andreas Gritsch, Benjamin Merkel, and Andreas Reiserer. "Erbium dopants in nanophotonic silicon waveguides." Optica 8, no. 1 (January 6, 2021): 40. http://dx.doi.org/10.1364/optica.413330.

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Otterstrom, Nils T., Ryan O. Behunin, Eric A. Kittlaus, Zheng Wang, and Peter T. Rakich. "A silicon Brillouin laser." Science 360, no. 6393 (June 7, 2018): 1113–16. http://dx.doi.org/10.1126/science.aar6113.

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Brillouin laser oscillators offer powerful and flexible dynamics as the basis for mode-locked lasers, microwave oscillators, and optical gyroscopes in a variety of optical systems. However, Brillouin interactions are markedly weak in conventional silicon photonic waveguides, stifling progress toward silicon-based Brillouin lasers. The recent advent of hybrid photonic-phononic waveguides has revealed Brillouin interactions to be one of the strongest and most tailorable nonlinearities in silicon. In this study, we have harnessed these engineered nonlinearities to demonstrate Brillouin lasing in silicon. Moreover, we show that this silicon-based Brillouin laser enters a regime of dynamics in which optical self-oscillation produces phonon linewidth narrowing. Our results provide a platform to develop a range of applications for monolithic integration within silicon photonic circuits.

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Kim, Youngin, Hyeonho Yoon, Jong-Bum You, Minchul Kim, and Hyo-Hoon Park. "Wide-Angle Beam-Steering Using an Optical Phased Array with Non-Uniform-Width Waveguide Radiators." Photonics 7, no. 3 (August 3, 2020): 56. http://dx.doi.org/10.3390/photonics7030056.

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We demonstrate wide-angle beam-steering using an optical phased array (OPA) with waveguide radiators designed with non-uniform widths to reduce the crosstalk between waveguides. The OPA consists of a silicon based 1 × 16 array of electro-optic phase shifters and end-fire radiators. The 16 radiators were configured with four different widths and a half-wavelength spacing, which can remove the higher-order diffraction patterns in free space. The waveguides showed a low crosstalk of −10.2 dB at a wavelength of 1540 nm. With phase control, the OPA achieved wide beam-steering of over ±80° with a side-lobe suppression of 7.4 dB.

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Elchiev, Javlon D., Muzaffar M. Djalalov, and Aleksandr A. Simonov. "The Use of Vacuum Deposition for Fabrication of Optical Amplifying Mediums and Fiber Optic Modules." Key Engineering Materials 500 (January 2012): 90–93. http://dx.doi.org/10.4028/www.scientific.net/kem.500.90.

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There has shown new vacuum technique of making planar waveguides doped with rare earths, on the basis of simultaneous vacuum deposition of quartz and alloying components. This technology allows to create optical waveguiding layers and amplifying planar compositions on wafers of silicon or quartz, and allows the dose-doping quartz with rare-earth elements, as well as germanium oxide and aluminum oxide, to obtain the optimal composition of a planar waveguide. With the help of lithography formed planar guide mediums with amplifying and modulating properties. There have been researched the methods of production of laboratory models of optical amplifying mediums, using vacuum technology, for the manufacture of planar erbium-doped amplifiers.

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Butt, Muhammad Ali, and Ryszard Piramidowicz. "Standard slot waveguide and double hybrid plasmonic waveguide configurations for enhanced evanescent field absorption methane gas sensing." Photonics Letters of Poland 14, no. 1 (March 31, 2022): 10. http://dx.doi.org/10.4302/plp.v14i1.1121.

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Herein, a numerical study on standard slot waveguide and double hybrid plasmonic waveguide based on a silicon-on-insulator platform is presented. The geometric parameters of both the waveguides are optimized for the operational wavelength of 3.39 μm (absorption line of methane gas) to obtain the maximum evanescent field ratio (EFR). By utilizing Lambert-Beer’s law, the gas sensing capability of both the waveguides is determined. It is found out that both the waveguides of length 100 μm offer high EFR resulting in the 3dB decay of the propagating mode power for the methane gas concentration of 20-22 % in the chamber. The study provides the foundation for the practical realization of compact and highly sensitive gas sensors. Full Text: PDF ReferencesJ.Y. Yo, Y.S. Kwon, J.W. Lee, J.S. Park, B.H. Rho, W. II. Choi. "Acute Respiratory Distress Due to Methane Inhalation", Tuberculosis and Respiratory Diseases 74, 120-123 (2013). CrossRef M. A. Butt, S. A. Degtyarev, S. N. Khonina and N. L. Kazanskiy. "An evanescent field absorption gas sensor at mid-IR 3.39 μm wavelength", Journal of Modern Optics 64, 1892-1897 (2017). CrossRef M. A. Butt, S. N. Khonina and N. L. Kazanskiy. "Modelling of Rib channel waveguides based on silicon-on-sapphire at 4.67 μm wavelength for evanescent field gas absorption sensor", Optik 168, 692-697, (2018). CrossRef M. A. Butt, S. N. Khonina and S. N. Kazanskiy. "Silicon on silicon dioxide slot waveguide evanescent field gas absorption sensor", Journal of Modern Optics 65, 174-178, (2017). CrossRef S. N. Khonina, N. L. Kazanskiy and M. A. Butt. "Evanescent Field Ratio Enhancement of a Modified Ridge Waveguide Structure for Methane Gas Sensing Application", IEEE Sensors Journal 20, 8469-8476 (2020). CrossRef M.Vlk, A. Datta, S. Alberti, H.D. Yallew, V. Mittal, G. S. Murugan, J. Jagerska. "Extraordinary evanescent field confinement waveguide sensor for mid-infrared trace gas spectroscopy", Light: Science & Applications 10, 26 (2021). CrossRef M.A. Butt, S.N. Khonina, N.L. Kazankiy. "Enhancement of evanescent field ratio in a silicon strip waveguide by incorporating a thin metal film", Laser Physics 29, 076202 (2019). CrossRef M. A. Butt, N. L. Kazanskiy and S. N. Khonina, "Highly integrated plasmonic sensor design for the simultaneous detection of multiple analytes", Current Applied Physics 20, 1274-1280 (2020). CrossRef T. Milde, M. Hoppe, H. Tatenguem, C. Assmann, W. Schade, J. Sacher. "Comparison of the spectral excitation behavior of methane according to InP, GaSb, IC, and QC lasers as excitation source by sensor applications", Applied Optics 58, C84 (2019). CrossRef N. L. Kazanskiy, S.N. Khonina, M.A. Butt. "Polarization-Insensitive Hybrid Plasmonic Waveguide Design for Evanescent Field Absorption Gas Sensor", Photonic Sensors 11, 279-290 (2021). CrossRef D. Popa, F. Udrea. "Towards Integrated Mid-Infrared Gas Sensors", Sensors 19, 2076 (2019). CrossRef S-W. Kang, K. Sasaki, H. Minamitani. "Sensitivity analysis of a thin-film optical waveguide biochemical sensor using evanescent field absorption", Applied Optics 32, 3544-3549 (1993). CrossRef

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Zhang, Qian, Jinbin Pan, Shulong Wang, Yongqian Du, and Jieyu Wu. "A Triangle Hybrid Plasmonic Waveguide with Long Propagation Length for Ultradeep Subwavelength Confinement." Crystals 12, no. 1 (January 4, 2022): 64. http://dx.doi.org/10.3390/cryst12010064.

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Facing the problems of ohmic loss and short propagation length, the application of plasmonic waveguides is limited. Here, a triangle hybrid plasmonic waveguide is introduced, where a cylinder silicon waveguide is separated from the triangle prism silver waveguide by a nanoscale silica gap. The process of constant optimization of waveguide structure is completed and simulation results indicate that the propagation length could reach a length of 510 μm, and the normalized mode area could reach 0.03 along with a high figure of merit 3150. This implies that longer propagation length could be simultaneously achieved along with relatively ultra-deep subwavelength mode confinement due to the hybridization between metallic plasmon polarization mode and silicon waveguide mode, compared with previous study. By an analysis of fabrication errors, it is confirmed that this waveguide is fairly stable over a wide error range. Additionally, the excellent performance of this is further proved by the comparison with other hybrid plasmonic waveguides. Our work is significant to manipulate light waves at sub-wavelength dimensions and enlarge the application fields, such as light detection and photoelectric sensors, which also benefit the improvement of the integration of optical devices.

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El Shamy, Raghi S., Mohamed A. Swillam, and Xun Li. "Optimization of Silicon Nitride Waveguide Platform for On-Chip Virus Detection." Sensors 22, no. 3 (February 2, 2022): 1152. http://dx.doi.org/10.3390/s22031152.

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This work presents a rigorous and generic sensitivity analysis of silicon nitride on silicon dioxide strip waveguide for virus detection. In general, by functionalizing the waveguide surface with a specific antibodies layer, we make the optical sensor sensitive only to a particular virus. Unlike conventional virus detection methods such as polymerase chain reaction (PCR), integrated refractive index (RI) optical sensors offer cheap and mass-scale fabrication of compact devices for fast and straightforward detection with high sensitivity and selectivity. Our numerical analysis includes a wide range of wavelengths from visible to mid-infrared. We determined the strip waveguide’s single-mode dimensions and the optimum dimensions that maximize the sensitivity to the virus layer attached to its surface at each wavelength using finite difference eigenmode (FDE) solver. We also compared the strip waveguide with the widely used slot waveguide. Our theoretical study shows that silicon nitride strip waveguide working at lower wavelengths is the optimum choice for virus detection as it maximizes both the waveguide sensitivity (Swg) and the figure of merit (FOM) of the sensor. The optimized waveguides are well suited for a range of viruses with different sizes and refractive indices. Balanced Mach–Zehnder interferometer (MZI) sensors were designed using FDE solver and photonic circuit simulator at different wavelengths. The designed sensors show high FOM at λ = 450 nm ranging from 500 RIU−1 up to 1231 RIU−1 with LMZI = 500 µm. Different MZI configurations were also studied and compared. Finally, edge coupling from the fiber to the sensor was designed, showing insertion loss (IL) at λ = 450 nm of 4.1 dB for the design with FOM = 500 RIU−1. The obtained coupling efficiencies are higher than recently proposed fiber couplers.

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Journal articles on the topic 'Silicon optical waveguides'

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