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Journal articles on the topic 'Silicon nitride passivated solar cells'

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Author: Grafiati

Published: 4 June 2021

Last updated: 28 January 2023

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1

Janßen, L., H. Windgassen, D. L. Bätzner, B. Bitnar, and H. Neuhaus. "Silicon nitride passivated bifacial Cz-silicon solar cells." Solar Energy Materials and Solar Cells 93, no. 8 (August 2009): 1435–39. http://dx.doi.org/10.1016/j.solmat.2009.03.015.

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2

Lin, Xing Xing. "Silicon Nanowires Based Solar Cell Using Native Oxide and Silicon Nitride Bi-Layer Passivation." Advanced Materials Research 853 (December 2013): 341–44. http://dx.doi.org/10.4028/www.scientific.net/amr.853.341.

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Silicon nanowires (SiNWs) based solar cells are passivated by native oxide and SiNx bi-layer. In comparison with cells passivated by SiNx single layer, bi-layer passivation exhibits higher effective minority lifetime, illustrating a better surface passivation effect, which leads to a gain of internal quantum efficiency in the short wavelength range, a better output performance with an increase of 0.16% in efficiency. The data obtained from this work is fundamental and has some reference value for future studies.

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3

Wen, Yuli, Huynh Thi Cam Tu, and Keisuke Ohdaira. "Tunnel nitride passivated contacts for silicon solar cells formed by catalytic CVD." Japanese Journal of Applied Physics 60, SB (February 4, 2021): SBBF09. http://dx.doi.org/10.35848/1347-4065/abdccd.

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4

Mittelstädt, L., S. Dauwe, A. Metz, R. Hezel, and C. Häßler. "Front and rear silicon-nitride-passivated multicrystalline silicon solar cells with an efficiency of 18.1%." Progress in Photovoltaics: Research and Applications 10, no. 1 (January 2002): 35–39. http://dx.doi.org/10.1002/pip.423.

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5

Pakhuruddin, Mohd Zamir, and Nur Afidah Md. Noor. "Ray Tracing of Thin PERC Silicon Solar Cells with Cone Textures." Key Engineering Materials 930 (August 31, 2022): 3–8. http://dx.doi.org/10.4028/p-1me3ip.

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Thinning of crystalline silicon (c-Si) wafer is a promising approach to reduce the technology cost of passivated emitter rear cell (PERC) solar cell. However, reducing the wafer thickness compromises light absorption, hence short-circuit current density (Jsc) in the solar cell. This necessitates effective light trapping in the device. In this work, upright cone textures are incorporated on the surface of 50 μm PERC monocrystalline silicon solar cell. SunSolve ray tracer is used to simulate the optical and electrical properties of the solar cell within 300-1200 nm wavelength region. Besides, the solar cell is also simulated with a front silicon nitride (SiNx) anti-reflective coating (ARC) on the cone textures. From the results, the thin PERC solar cell with cone textures and SiNx ARC demonstrates Jsc of up to 38.8 mA/cm2 and conversion efficiency of 20.4%. This is a significant performance improvement when compared to the planar cell, with Jsc of 25.1 mA/cm2 and efficiency of 13.1%. The improvement is attributed to the enhanced broadband light absorption and increased external quantum efficiency in the device.

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6

Dauwe, Stefan, Lutz Mittelstädt, Axel Metz, and Rudolf Hezel. "Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells." Progress in Photovoltaics: Research and Applications 10, no. 4 (January 28, 2002): 271–78. http://dx.doi.org/10.1002/pip.420.

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7

Mohamed Okasha Mohamed Okasha, Asmaa, Bishal Kafle, Benjamin Torda, Christopher Teßmann, and Marc Hofmann. "Optimized amorphous silicon nitride layers for the front side passivation of c-Si PERC solar cells." EPJ Photovoltaics 11 (2020): 6. http://dx.doi.org/10.1051/epjpv/2020003.

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Plasma-enhanced chemical vapour deposition (PECVD) SiNx is the typical choice as anti-reflection coating (ARC) for Silicon based solar cells. However, there still exists a room for improvement in passivation quality of SiNx while maintaining good optics for the front side of a solar cell. In this paper, we studied in detail the optical and electrical properties of SiNx layers by varying the chamber pressure and substrate temperature in an industrially used inline PECVD tool. Both the optical as well as electrical properties of SiNx layers were found to be significantly influenced by the chamber pressure and substrate temperature. A trade-off between excellent optics and low surface recombination is observed with an increase in chamber pressure, whereas higher substrate temperature generally led to better passivation quality. The Si-H bond density, which is expected to directly influence the quality of surface passivation, increased at high pressure and at low substrate temperature. Based on our investigations, a good compromise between optics and surface passivation is struck to prepare optimized SiNx layers and apply them as passivation layers for the front side of passivated emitter and rear cell (PERC) solar cells. The best solar cells show high short-circuit current density (jSC) of 39.9 mA/cm2 corresponding to the SiNx layers with low parasitic absorption, good antireflection property, and excellent passivation of the surface and bulk silicon. The current-voltage (I-V) results are found to be in agreement with internal quantum efficiency (IQE) measurements of the solar cells.

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8

Hsu, Chia-Hsun, Shih-Mao Liu, Shui-Yang Lien, Xiao-Ying Zhang, Yun-Shao Cho, Yan-Hua Huang, Sam Zhang, Song-Yan Chen, and Wen-Zhang Zhu. "Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells." Nanomaterials 9, no. 10 (September 29, 2019): 1392. http://dx.doi.org/10.3390/nano9101392.

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In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiNx) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al2O3) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiNx/Al2O3 layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiNx layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.

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9

Huang, Yu-Chun, and Ricky Wenkuei Chuang. "Study on Annealing Process of Aluminum Oxide Passivation Layer for PERC Solar Cells." Coatings 11, no. 9 (August 31, 2021): 1052. http://dx.doi.org/10.3390/coatings11091052.

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In this study, Atomic Layer Deposition (ALD) equipment was used to deposit Al2O3 film on a p-type silicon wafer, trimethylaluminum (TMA) and H2O were used as precursor materials, and then the post-annealing process was conducted under atmospheric pressure. The Al2O3 films annealed at different temperatures between 200–500 °C were compared to ascertain the effect of passivation films and to confirm the changes in film structure and thickness before and after annealing through TEM images. Furthermore, the negative fixed charge and interface defect density were analyzed using the C-V measurement method. Photo-induced carrier generation was used to measure the effective minority carrier lifetime, the implied open-circuit voltage, and the effective surface recombination velocity of the film. The carrier lifetime was found to be the longest (2181.7 μs) for Al2O3/Si post-annealed at 400 °C. Finally, with the use of VHF (40.68 MHz) plasma-enhanced chemical vapor deposition (PECVD) equipment, a silicon nitride (SiNx) film was plated as an anti-reflection layer over the front side of the wafer and as a capping layer on the back to realize a passivated emitter and rear contact (PERC) solar cell with optimal efficiency up to 21.54%.

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10

Hoang, Vu Ngoc, Linh Ngoc Tran, Lan Truong, Khoa Thanh Nhat Phan, Chien Mau Dang, and Thuat Tran Nguyen. "Improvement of short circuit current of mono crystalline silicon solar cells." Science and Technology Development Journal 16, no. 1 (March 31, 2013): 48–56. http://dx.doi.org/10.32508/stdj.v16i1.1418.

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In this report we present series of experiments during which the short circuit current of mono crystalline silicon solar cell was improved step by step so as a consequence the efficiency was increased. At first, the front contact of solar cell was optimized to reduce the shadow loss and the series resistance. Then surface treatments were prepared by TMAH solution to reduce the total light reflectance and to improve the light trapping effect. Finally, antireflection coatings were deposited to passivate the front surface either by silicon nitride thin layer or to increase the collection probability by indium tin oxide layer, and to reduce the reflectance of light. As a result, solar cells of about 13% have been obtained, with the average open circuit voltage Voc about 527mV, with the fill factor about 68% and the short circuit current about 7.92 mA/cm2 under the irradiation density of 21 mW/cm2.

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11

El Amrani, A., R. Si-Kaddour, M. Maoudj, and C. Nasraoui. "SiN/SiO2 passivation stack of n-type silicon surface." Materials Science-Poland 37, no. 3 (September 1, 2019): 482–87. http://dx.doi.org/10.2478/msp-2019-0065.

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AbstractThe SiN/SiO2 stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare the stack layer obtained with SiO2 grown by both rapid thermal and chemical ways to passivate n-type monocrystalline silicon surface. By varying the plateau time and the plateau temperature of the rapid thermal oxidation, we determined the parameters to grow 10 nm thick oxide. Two-step nitric acid oxidation was used to grow 2 nm thick silicon oxide. Silicon nitride films with three refractive indices were used to produce the SiN/SiO2 stack. Regarding this parameter, the minority carrier lifetime measured by means of QSSPC revealed that the refractive index of 1.9 ensured the best passivation quality of silicon wafer surface. We also found that stacks with nitric acid oxidation showed definitely the best passivation quality. In addition to produce the most efficient passivation, this technique has the lowest thermal budget.

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12

Chen, Christopher, Jeong-Mo Hwang, Young-Woo Ok, Wook-Jin Choi, Vijaykumar Upadhyaya, Brian Rounsaville, and Ajeet Rohatgi. "Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells." Journal of Applied Physics 132, no. 21 (December 7, 2022): 213302. http://dx.doi.org/10.1063/5.0111681.

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A negatively charged oxide-nitride-oxide stack for field-effect passivation of crystalline silicon solar cells is discussed. The negative charge was injected into the stack by a plasma charge injection technology. Charge stability was studied by exposing samples to AM1.5 simulation visible light and full-spectrum light at temperatures ranging from 55 to 78 °C for up to 300 h. Charge injection and loss were quantified based on shifts in the flatband voltage of capacitance–voltage curves measured with a mercury probe. The most probable mechanism of charge loss was found to be diffusion of negative charged hydrogen atoms through nitride and bottom oxide. The optimum recipe for each layer of the stack was investigated to minimize the loss of injected charge. The flatband voltage decay of the optimized stack was found to fit a power-law trend, suggesting the dispersive transport of hydrogen atoms with a dispersion parameter of ∼0.06–0.07. The optimized stack is projected to maintain a negative charge density of about 3.6 × 1012 cm−2 or more after 25 years of field operation in an environment such as Arizona, which would be sufficient for field-effect passivation under one-sun illumination. The high stability of the negative injected charge makes the plasma charging technology a safer and lower cost alternative to Al2O3-passivation technology commonly used to passivate p-type surfaces.

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13

Wang, Enyu, He Wang, and Hong Yang. "Comparison of the Electrical Properties of PERC Approach Applied to Monocrystalline and Multicrystalline Silicon Solar Cells." International Journal of Photoenergy 2016 (2016): 1–6. http://dx.doi.org/10.1155/2016/8982376.

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At present, the improvement in performance and the reduction of cost for crystalline silicon solar cells are a key for photovoltaic industry. Passivated emitter and rear cells are the most promising technology for next-generation commercial solar cells. The efficiency gains of passivated emitter and rear cells obtained on monocrystalline silicon wafer and multicrystalline silicon wafer are different. People are puzzled as to how to develop next-generation industrial cells. In this paper, both monocrystalline and multicrystalline silicon solar cells for commercial applications with passivated emitter and rear cells structure were fabricated by using cost-effective process. It was found that passivated emitter and rear cells are more effective for monocrystalline silicon solar cells than for multicrystalline silicon solar cells. This study gives some hints about the industrial-scale mass production of passivated emitter and rear cells process.

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14

Bullock, J., D. Yan, Y. Wan, A. Cuevas, B. Demaurex, A. Hessler-Wyser, and S. De Wolf. "Amorphous silicon passivated contacts for diffused junction silicon solar cells." Journal of Applied Physics 115, no. 16 (April 28, 2014): 163703. http://dx.doi.org/10.1063/1.4872262.

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15

El amrani, A., I. Menous, L. Mahiou, R. Tadjine, A. Touati, and A. Lefgoum. "Silicon nitride film for solar cells." Renewable Energy 33, no. 10 (October 2008): 2289–93. http://dx.doi.org/10.1016/j.renene.2007.12.015.

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16

Nemeth, Bill, David L. Young, Matthew R. Page, Vincenzo LaSalvia, Steve Johnston, Robert Reedy, and Paul Stradins. "Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells." Journal of Materials Research 31, no. 6 (March 23, 2016): 671–81. http://dx.doi.org/10.1557/jmr.2016.77.

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17

UEMATSU, Tsuyoshi, Tadashi SAITOH, Yasuhiro KIDA, Shigeru KOKUNAI, and Kunihiro MATSUKUMA. "Efficiency improvement for surface-passivated crystalline silicon solar cells." NIPPON KAGAKU KAISHI, no. 8 (1988): 1146–51. http://dx.doi.org/10.1246/nikkashi.1988.1146.

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18

Wood, R. F., R. D. Westbrook, and G. E. Jellison. "18% efficient intrinsically passivated laser‐processed silicon solar cells." Applied Physics Letters 50, no. 2 (January 12, 1987): 107–9. http://dx.doi.org/10.1063/1.97868.

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19

Baliozian, Puzant, Mohammad Al-Akash, Elmar Lohmuller, Armin Richter, Tobias Fellmeth, Anna Munzer, Nico Wohrle, et al. "Postmetallization “Passivated Edge Technology” for Separated Silicon Solar Cells." IEEE Journal of Photovoltaics 10, no. 2 (March 2020): 390–97. http://dx.doi.org/10.1109/jphotov.2019.2959946.

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20

Urrejola, Elias, Kristian Peter, Heiko Plagwitz, and Gunnar Schubert. "Silicon diffusion in aluminum for rear passivated solar cells." Applied Physics Letters 98, no. 15 (April 11, 2011): 153508. http://dx.doi.org/10.1063/1.3579541.

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21

Yan, Di, Andres Cuevas, Jesús Ibarra Michel, Chun Zhang, Yimao Wan, Xinyu Zhang, and James Bullock. "Polysilicon passivated junctions: The next technology for silicon solar cells?" Joule 5, no. 4 (April 2021): 811–28. http://dx.doi.org/10.1016/j.joule.2021.02.013.

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22

Fukui, K., K. Okada, Y. Inomata, H. Takahashi, S. Fujii, Y. Fukawa, and K. Shirasawa. "Surface and bulk-passivated large area multicrystalline silicon solar cells." Solar Energy Materials and Solar Cells 48, no. 1-4 (November 1997): 219–28. http://dx.doi.org/10.1016/s0927-0248(97)00104-9.

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23

Krauß, Karin, Fabian Fertig, Johannes Greulich, Stefan Rein, and Ralf Preu. "biPERC silicon solar cells enabling bifacial applications for industrial solar cells with passivated rear sides." physica status solidi (a) 213, no. 1 (October 1, 2015): 68–71. http://dx.doi.org/10.1002/pssa.201532737.

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24

Dou, Bingfei, Rui Jia, Zhao Xing, Xiaojiang Yao, Dongping Xiao, Zhi Jin, and Xinyu Liu. "Enhanced Performance of Nanotextured Silicon Solar Cells with Excellent Light-Trapping Properties." Photonics 8, no. 7 (July 9, 2021): 272. http://dx.doi.org/10.3390/photonics8070272.

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Light-trapping nanostructures have been widely used for improving solar cells’ performance, but the higher surface recombination and poor electrode contact introduced need to be addressed. In this work, silicon nanostructures were synthesized via silver-catalyzed etching to texturize solar cells. Atomic-layer-deposited Al2O3 passivated the nanotextured cells. A surface recombination velocity of 126 cm/s was obtained, much lower than the 228 cm/s of the SiNX-passivated one. Additionally, the open-circuit voltage (VOC) of the nanotextured cells improved significantly from 582 to 610 mV, as did the short-circuit current (JSC) from 25.5 to 31 mA/cm2. Furthermore, the electrode contact property was enhanced by light-induced plating. A best efficiency of 13.3% for nano-textured cells was obtained, which is higher than the planar cell’s 12%.

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25

El Amrani, A., A. Bekhtari, A. El Kechai, H. Menari, L. Mahiou, and M. Maoudj. "Efficient passivation of solar cells by silicon nitride." Vacuum 120 (October 2015): 95–99. http://dx.doi.org/10.1016/j.vacuum.2015.04.041.

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26

Rüdiger, Marc, and Martin Hermle. "Numerical Analysis of Locally Contacted Rear Surface Passivated Silicon Solar Cells." Japanese Journal of Applied Physics 51 (October 22, 2012): 10NA07. http://dx.doi.org/10.1143/jjap.51.10na07.

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27

Rüdiger, Marc, and Martin Hermle. "Numerical Analysis of Locally Contacted Rear Surface Passivated Silicon Solar Cells." Japanese Journal of Applied Physics 51, no. 10S (October 1, 2012): 10NA07. http://dx.doi.org/10.7567/jjap.51.10na07.

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28

Okamoto, Chikao, Takashi Minemoto, Mikio Murozono, Hideyuki Takakura, and Yoshihiro Hamakawa. "Electric and Crystallographic Characterizations on Hydrogen Passivated Spherical Silicon Solar Cells." Japanese Journal of Applied Physics 44, no. 10 (October 11, 2005): 7372–76. http://dx.doi.org/10.1143/jjap.44.7372.

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29

Qiao, Qi, Hongyan Lu, Jian Ge, Xi Xi, Rulong Chen, Jian Yang, Jingbing Zhu, Zhengrong Shi, and Junhao Chu. "18.5% efficient AlOx/SiNy rear passivated industrial multicrystalline silicon solar cells." Applied Surface Science 305 (June 2014): 439–44. http://dx.doi.org/10.1016/j.apsusc.2014.03.108.

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30

Richter, Susanne, Kai Kaufmann, Volker Naumann, Martina Werner, Andreas Graff, Stephan Großer, Anamaria Moldovan, et al. "High-resolution structural investigation of passivated interfaces of silicon solar cells." Solar Energy Materials and Solar Cells 142 (November 2015): 128–33. http://dx.doi.org/10.1016/j.solmat.2015.06.051.

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31

Wong, Johnson, Shubham Duttagupta, Rolf Stangl, Bram Hoex, and Armin G. Aberle. "A Systematic Loss Analysis Method for Rear-Passivated Silicon Solar Cells." IEEE Journal of Photovoltaics 5, no. 2 (March 2015): 619–26. http://dx.doi.org/10.1109/jphotov.2014.2388071.

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32

Fertig, Fabian, Karin Krauß, and Stefan Rein. "Light-induced degradation of PECVD aluminium oxide passivated silicon solar cells." physica status solidi (RRL) - Rapid Research Letters 9, no. 1 (December 5, 2014): 41–46. http://dx.doi.org/10.1002/pssr.201409424.

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33

Ullah, Hayat, Stanislaw Czapp, Seweryn Szultka, Hanan Tariq, Usama Bin Qasim, and Hassan Imran. "Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review." Energies 16, no. 2 (January 7, 2023): 715. http://dx.doi.org/10.3390/en16020715.

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Contact selectivity is a key parameter for enhancing and improving the power conversion efficiency (PCE) of crystalline silicon (c-Si)-based solar cells. Carrier selective contacts (CSC) are the key technology which has the potential to achieve a higher PCE for c-Si-based solar cells closer to their theoretical efficiency limit. A recent and state-of-the-art approach in this domain is the tunnel oxide passivated contact (TOPCon) approach, which is completely different from the existing classical heterojunction solar cells. The main and core element of this contact is the tunnel oxide, and its main role is to cut back the minority carrier recombination at the interface. A state-of-the-art n-type c-Si-based TOPCon solar cell featuring a passivated rear contact was experimentally analyzed, and the highest PCE record of ~25.7% was achieved. It has a high fill factor (FF) of ~83.3%. These reported results prove that the highest efficiency potential is that of the passivated full area rear contact structures and it is more efficient than that of the partial rear contact (PRC) structures. In this paper, a review is presented which considers the key characteristics of TOPCon solar cells, i.e., minority carrier recombination, contact resistance, and surface passivation. Additionally, practical challenges and key issues related to TOPCon solar cells are also highlighted. Finally, the focus turns to the characteristics of TOPCon solar cells, which offer an improved and better understanding of doping layers and tunnel oxide along with their mutual and combined effect on the overall performance of TOPCon solar cells.

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34

Liu, Bangwu, Sihua Zhong, Jinhu Liu, Yang Xia, and Chaobo Li. "Silicon Nitride Film by Inline PECVD for Black Silicon Solar Cells." International Journal of Photoenergy 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/971093.

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The passivation process is of significant importance to produce high-efficiency black silicon solar cell due to its unique microstructure. The black silicon has been produced by plasma immersion ion implantation (PIII) process. And the Silicon nitride films were deposited by inline plasma-enhanced chemical vapor deposition (PECVD) to be used as the passivation layer for black silicon solar cell. The microstructure and physical properties of silicon nitride films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, and the microwave photoconductance decay (μ-PCD) method. With optimizing the PECVD parameters, the conversion efficiency of black silicon solar cell can reach as high as 16.25%.

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35

Pomaska, Manuel, Alexei Richter, Florian Lentz, Tore Niermann, Friedhelm Finger, Uwe Rau, and Kaining Ding. "Wide gap microcrystalline silicon carbide emitter for amorphous silicon oxide passivated heterojunction solar cells." Japanese Journal of Applied Physics 56, no. 2 (January 20, 2017): 022302. http://dx.doi.org/10.7567/jjap.56.022302.

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36

Neuhaus, Dirk-Holger, and Adolf Münzer. "Industrial Silicon Wafer Solar Cells." Advances in OptoElectronics 2007 (April 13, 2007): 1–15. http://dx.doi.org/10.1155/2007/24521.

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In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

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37

Liu, Bingfa, Shenyu Qiu, Nan Chen, Guoping Du, and Jie Sun. "Double-layered silicon nitride antireflection coatings for multicrystalline silicon solar cells." Materials Science in Semiconductor Processing 16, no. 3 (June 2013): 1014–21. http://dx.doi.org/10.1016/j.mssp.2013.02.019.

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38

Kishore, R., S. N. Singh, and B. K. Das. "PECVD grown silicon nitride AR coatings on polycrystalline silicon solar cells." Solar Energy Materials and Solar Cells 26, no. 1-2 (March 1992): 27–35. http://dx.doi.org/10.1016/0927-0248(92)90123-7.

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39

Stollwerck, G., S. Reber, and C. Häßler. "Crystalline Silicon Thin-Film Solar Cells on Silicon Nitride Ceramic Substrates." Advanced Materials 13, no. 23 (December 2001): 1820–24. http://dx.doi.org/10.1002/1521-4095(200112)13:23<1820::aid-adma1820>3.0.co;2-k.

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40

Tsai, Chieh-Wa, Tung-Kuan Liu, and Po-Wen Hsueh. "Patent Analysis of High Efficiency Tunneling Oxide Passivated Contact Solar Cells." Energies 13, no. 12 (June 12, 2020): 3060. http://dx.doi.org/10.3390/en13123060.

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High efficiency tunneling oxide passivated contact (TOPCon) solar cell is the traditional PN junction structure, combined the advantages of using a thin film of the passivated silicon surface to separate the metal from the silicon wafer. In this study, the patent analysis of high efficiency TOPCon solar cell is presented. The structure and process technology of TOPCon solar cell were analyzed first, which is used as the basis for the key words of the patent search. The patent management chart analysis is provided, and then the patent portfolio of the main research countries and important manufacturers on the research subject can be recognized. Moreover, the technology-function matrix analysis is used to comprehend the technical development trend of the research topic. The results indicate the TOPCon solar cell technology currently entered into the maturity stage in 2019, and the companies with the top three number of patents are LG Electronics, SunPower, and SolarCity (which was acquired by Tesla in 2016). SunPowern is the earliest patent assignee, and LG Electronics is the follower, while its patent outputs are heavily concentrated after 2014. Patent technology-function matrix found the development focus of the device-related technologies are tunneling oxide and polycrystalline silicon, with a total of 21 patents, and the development focus of process-related technologies are the process of tunneling oxide layers and the process of polysilicon film. Based on the analysis results, the future development prospects of the research topic and the direction of patent portfolio are evaluated.

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41

Wood, R. F., R. D. Westbrook, and G. E. Jellison. "Excimer laser-processed oxide-passivated silicon solar cells of 19.5-percent efficiency." IEEE Electron Device Letters 8, no. 5 (May 1987): 249–51. http://dx.doi.org/10.1109/edl.1987.26619.

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Saitoh, Tadashi, Osamu Kamataki, and Tsuyoshi Uematsu. "Optimization of Antireflection Film Structures for Surface-Passivated Crystalline Silicon Solar Cells." Japanese Journal of Applied Physics 33, Part 1, No. 4A (April 15, 1994): 1809–13. http://dx.doi.org/10.1143/jjap.33.1809.

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Neumüller, A., S. Bereznev, M. Ewert, O. Volobujeva, O. Sergeev, J. Falta, M. Vehse, and C. Agert. "Carrier collection losses in interface passivated amorphous silicon thin-film solar cells." Applied Physics Letters 109, no. 4 (July 25, 2016): 043903. http://dx.doi.org/10.1063/1.4959995.

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Urrejola, E., K. Peter, H. Plagwitz, and G. Schubert. "Distribution of Silicon in the Aluminum Matrix for Rear Passivated Solar Cells." Energy Procedia 8 (2011): 331–36. http://dx.doi.org/10.1016/j.egypro.2011.06.145.

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Lohmüller, E., B. Thaidigsmann, J. Bartsch, C. Harmel, J. Specht, A. Wolf, F. Clement, M. Hörteis, and D. Biro. "Advanced metallization of rear surface passivated metal wrap through silicon solar cells." Energy Procedia 8 (2011): 546–51. http://dx.doi.org/10.1016/j.egypro.2011.06.180.

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Greulich, J., N. Wöhrle, M. Glatthaar, and S. Rein. "Optical Modeling of the Rear Surface Roughness of Passivated Silicon Solar Cells." Energy Procedia 27 (2012): 234–39. http://dx.doi.org/10.1016/j.egypro.2012.07.057.

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Schwab, Christoph, Jonas Haunschild, Martin Graf, Christoph Wufka, Andreas Wolf, Daniel Biro, and Ralf Preu. "Evaluation of Cast Mono Silicon Material for Thermal Oxide Passivated Solar Cells." Energy Procedia 38 (2013): 611–17. http://dx.doi.org/10.1016/j.egypro.2013.07.324.

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Jianhua Zhao, Aihua Wang, and M. A. Green. "Double layer antireflection coating for high-efficiency passivated emitter silicon solar cells." IEEE Transactions on Electron Devices 41, no. 9 (1994): 1592–94. http://dx.doi.org/10.1109/16.310110.

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Kim, Hyunho, Soohyun Bae, Kwang-sun Ji, Soo Min Kim, Jee Woong Yang, Chang Hyun Lee, Kyung Dong Lee, et al. "Passivation properties of tunnel oxide layer in passivated contact silicon solar cells." Applied Surface Science 409 (July 2017): 140–48. http://dx.doi.org/10.1016/j.apsusc.2017.02.195.

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Krauss, Karin, Fabian Fertig, Dorothee Menzel, and Stefan Rein. "Light-induced Degradation of Silicon Solar Cells with Aluminiumoxide Passivated Rear Side." Energy Procedia 77 (August 2015): 599–606. http://dx.doi.org/10.1016/j.egypro.2015.07.086.

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