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Academic literature on the topic 'Silicon nitride passivated solar cells'

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Journal articles on the topic "Silicon nitride passivated solar cells"

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Janßen, L., H. Windgassen, D. L. Bätzner, B. Bitnar, and H. Neuhaus. "Silicon nitride passivated bifacial Cz-silicon solar cells." Solar Energy Materials and Solar Cells 93, no. 8 (August 2009): 1435–39. http://dx.doi.org/10.1016/j.solmat.2009.03.015.

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Lin, Xing Xing. "Silicon Nanowires Based Solar Cell Using Native Oxide and Silicon Nitride Bi-Layer Passivation." Advanced Materials Research 853 (December 2013): 341–44. http://dx.doi.org/10.4028/www.scientific.net/amr.853.341.

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Silicon nanowires (SiNWs) based solar cells are passivated by native oxide and SiNx bi-layer. In comparison with cells passivated by SiNx single layer, bi-layer passivation exhibits higher effective minority lifetime, illustrating a better surface passivation effect, which leads to a gain of internal quantum efficiency in the short wavelength range, a better output performance with an increase of 0.16% in efficiency. The data obtained from this work is fundamental and has some reference value for future studies.
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Wen, Yuli, Huynh Thi Cam Tu, and Keisuke Ohdaira. "Tunnel nitride passivated contacts for silicon solar cells formed by catalytic CVD." Japanese Journal of Applied Physics 60, SB (February 4, 2021): SBBF09. http://dx.doi.org/10.35848/1347-4065/abdccd.

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Mittelstädt, L., S. Dauwe, A. Metz, R. Hezel, and C. Häßler. "Front and rear silicon-nitride-passivated multicrystalline silicon solar cells with an efficiency of 18.1%." Progress in Photovoltaics: Research and Applications 10, no. 1 (January 2002): 35–39. http://dx.doi.org/10.1002/pip.423.

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Pakhuruddin, Mohd Zamir, and Nur Afidah Md. Noor. "Ray Tracing of Thin PERC Silicon Solar Cells with Cone Textures." Key Engineering Materials 930 (August 31, 2022): 3–8. http://dx.doi.org/10.4028/p-1me3ip.

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Thinning of crystalline silicon (c-Si) wafer is a promising approach to reduce the technology cost of passivated emitter rear cell (PERC) solar cell. However, reducing the wafer thickness compromises light absorption, hence short-circuit current density (Jsc) in the solar cell. This necessitates effective light trapping in the device. In this work, upright cone textures are incorporated on the surface of 50 μm PERC monocrystalline silicon solar cell. SunSolve ray tracer is used to simulate the optical and electrical properties of the solar cell within 300-1200 nm wavelength region. Besides, the solar cell is also simulated with a front silicon nitride (SiNx) anti-reflective coating (ARC) on the cone textures. From the results, the thin PERC solar cell with cone textures and SiNx ARC demonstrates Jsc of up to 38.8 mA/cm2 and conversion efficiency of 20.4%. This is a significant performance improvement when compared to the planar cell, with Jsc of 25.1 mA/cm2 and efficiency of 13.1%. The improvement is attributed to the enhanced broadband light absorption and increased external quantum efficiency in the device.
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Dauwe, Stefan, Lutz Mittelstädt, Axel Metz, and Rudolf Hezel. "Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells." Progress in Photovoltaics: Research and Applications 10, no. 4 (January 28, 2002): 271–78. http://dx.doi.org/10.1002/pip.420.

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Mohamed Okasha Mohamed Okasha, Asmaa, Bishal Kafle, Benjamin Torda, Christopher Teßmann, and Marc Hofmann. "Optimized amorphous silicon nitride layers for the front side passivation of c-Si PERC solar cells." EPJ Photovoltaics 11 (2020): 6. http://dx.doi.org/10.1051/epjpv/2020003.

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Plasma-enhanced chemical vapour deposition (PECVD) SiNx is the typical choice as anti-reflection coating (ARC) for Silicon based solar cells. However, there still exists a room for improvement in passivation quality of SiNx while maintaining good optics for the front side of a solar cell. In this paper, we studied in detail the optical and electrical properties of SiNx layers by varying the chamber pressure and substrate temperature in an industrially used inline PECVD tool. Both the optical as well as electrical properties of SiNx layers were found to be significantly influenced by the chamber pressure and substrate temperature. A trade-off between excellent optics and low surface recombination is observed with an increase in chamber pressure, whereas higher substrate temperature generally led to better passivation quality. The Si-H bond density, which is expected to directly influence the quality of surface passivation, increased at high pressure and at low substrate temperature. Based on our investigations, a good compromise between optics and surface passivation is struck to prepare optimized SiNx layers and apply them as passivation layers for the front side of passivated emitter and rear cell (PERC) solar cells. The best solar cells show high short-circuit current density (jSC) of 39.9 mA/cm2 corresponding to the SiNx layers with low parasitic absorption, good antireflection property, and excellent passivation of the surface and bulk silicon. The current-voltage (I-V) results are found to be in agreement with internal quantum efficiency (IQE) measurements of the solar cells.
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Hsu, Chia-Hsun, Shih-Mao Liu, Shui-Yang Lien, Xiao-Ying Zhang, Yun-Shao Cho, Yan-Hua Huang, Sam Zhang, Song-Yan Chen, and Wen-Zhang Zhu. "Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells." Nanomaterials 9, no. 10 (September 29, 2019): 1392. http://dx.doi.org/10.3390/nano9101392.

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In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiNx) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al2O3) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiNx/Al2O3 layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiNx layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.
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Huang, Yu-Chun, and Ricky Wenkuei Chuang. "Study on Annealing Process of Aluminum Oxide Passivation Layer for PERC Solar Cells." Coatings 11, no. 9 (August 31, 2021): 1052. http://dx.doi.org/10.3390/coatings11091052.

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In this study, Atomic Layer Deposition (ALD) equipment was used to deposit Al2O3 film on a p-type silicon wafer, trimethylaluminum (TMA) and H2O were used as precursor materials, and then the post-annealing process was conducted under atmospheric pressure. The Al2O3 films annealed at different temperatures between 200–500 °C were compared to ascertain the effect of passivation films and to confirm the changes in film structure and thickness before and after annealing through TEM images. Furthermore, the negative fixed charge and interface defect density were analyzed using the C-V measurement method. Photo-induced carrier generation was used to measure the effective minority carrier lifetime, the implied open-circuit voltage, and the effective surface recombination velocity of the film. The carrier lifetime was found to be the longest (2181.7 μs) for Al2O3/Si post-annealed at 400 °C. Finally, with the use of VHF (40.68 MHz) plasma-enhanced chemical vapor deposition (PECVD) equipment, a silicon nitride (SiNx) film was plated as an anti-reflection layer over the front side of the wafer and as a capping layer on the back to realize a passivated emitter and rear contact (PERC) solar cell with optimal efficiency up to 21.54%.
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Hoang, Vu Ngoc, Linh Ngoc Tran, Lan Truong, Khoa Thanh Nhat Phan, Chien Mau Dang, and Thuat Tran Nguyen. "Improvement of short circuit current of mono crystalline silicon solar cells." Science and Technology Development Journal 16, no. 1 (March 31, 2013): 48–56. http://dx.doi.org/10.32508/stdj.v16i1.1418.

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In this report we present series of experiments during which the short circuit current of mono crystalline silicon solar cell was improved step by step so as a consequence the efficiency was increased. At first, the front contact of solar cell was optimized to reduce the shadow loss and the series resistance. Then surface treatments were prepared by TMAH solution to reduce the total light reflectance and to improve the light trapping effect. Finally, antireflection coatings were deposited to passivate the front surface either by silicon nitride thin layer or to increase the collection probability by indium tin oxide layer, and to reduce the reflectance of light. As a result, solar cells of about 13% have been obtained, with the average open circuit voltage Voc about 527mV, with the fill factor about 68% and the short circuit current about 7.92 mA/cm2 under the irradiation density of 21 mW/cm2.
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Dissertations / Theses on the topic "Silicon nitride passivated solar cells"

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Kerr, Mark John, and Mark Kerr@originenergy com au. "Surface, Emitter and Bulk Recombination in Silicon and Development of Silicon Nitride Passivated Solar Cells." The Australian National University. Faculty of Engineering and Information Technology, 2002. http://thesis.anu.edu.au./public/adt-ANU20040527.152717.

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[Some symbols cannot be rendered in the following metadata – please see the PDF file for an accurate version of the Abstract] ¶ Recombination within the bulk and at the surfaces of crystalline silicon has been investigated in this thesis. Special attention has been paid to the surface passivation achievable with plasma enhanced chemical vapour deposited (PECVD) silicon nitride (SiN) films due to their potential for widespread use in silicon solar cells. The passivation obtained with thermally grown silicon oxide (SiO2) layers has also been extensively investigated for comparison. ¶ Injection-level dependent lifetime measurements have been used throughout this thesis to quantify the different recombination rates in silicon. New techniques for interpreting the effective lifetime in terms of device characteristics have been introduced, based on the physical concept of a net photogeneration rate. The converse relationships for determining the effective lifetime from measurements of the open-circuit voltage (Voc) under arbitrary illumination have also been introduced, thus establishing the equivalency of the photoconductance and voltage techniques, both quasi-static and transient, by allowing similar possibilities for all of them. ¶ The rate of intrinsic recombination in silicon is of fundamental importance. It has been investigated as a function of injection level for both n-type and p-type silicon, for dopant densities up to ~5x1016cm-3. Record high effective lifetimes, up to 32ms for high resistivity silicon, have been measured. Importantly, the wafers where commercially sourced and had undergone significant high temperature processing. A new, general parameterisation has been proposed for the rate of band-to-band Auger recombination in crystalline silicon, which accurately fits the experimental lifetime data for arbitrary injection level and arbitrary dopant density. The limiting efficiency of crystalline silicon solar cells has been re-evaluated using this new parameterisation, with the effects of photon recycling included. ¶ Surface recombination processes in silicon solar cells are becoming progressively more important as industry drives towards thinner substrates and higher cell efficiencies. The surface recombination properties of well-passivating SiN films on p-type and n-type silicon have been comprehensively studied, with Seff values as low as 1cm/s being unambiguously determined. The well-passivating SiN films optimised in this thesis are unique in that they are stoichiometric in composition, rather than being silicon rich, a property which is attributed to the use of dilute silane as a process gas. A simple physical model, based on recombination at the Si/SiN interface being determined by a high fixed charge density within the SiN film (even under illumination), has been proposed to explain the injection-level dependent Seff for a variety of differently doped wafers. The passivation obtained with the optimised SiN films has been compared to that obtained with high temperature thermal oxides (FGA and alnealed) and the limits imposed by surface recombination on the efficiency of SiN passivated solar cells investigated. It is shown that the optimised SiN films show little absorption of UV photons from the solar spectrum and can be easily patterned by photolithography and wet chemical etching. ¶ The recombination properties of n+ and p+ emitters passivated with optimised SiN films and thermal SiO2 have been extensively studied over a large range of emitter sheet resistances. Both planar and random pyramid textured surfaces were studied for n+ emitters, where the optimised SiN films were again found to be stoichiometric in composition. The optimised SiN films provided good passivation of the heavily doped n+-Si/SiN interface, with the surface recombination velocity increasing from 1400cm/s to 25000cm/s as the surface concentration of electrically active phosphorus atoms increased from 7.5x1018cm-3 to 1.8x1020cm-3. The optimised SiN films also provided reasonable passivation of industrial n+ emitters formed in a belt-line furnace. It was found that the surface recombination properties of SiN passivated p+ emitters was poor and was worst for sheet resistances of ~150./ . The hypothesis that recombination at the Si/SiN interface is determined by a high fixed charge density within the SiN films was extended to explain this dependence on sheet resistance. The efficiency potential of SiN passivated n+p cells has been investigated, with a sheet resistance of 80-100./ and a base resistivity of 1-2.cm found to be optimal. Open-circuit voltages of 670-680mV and efficiencies up to ~20% and ~23% appear possible for SiN passivated planar and textured cells respectively. The recombination properties measured for emitters passivated with SiO2, both n+ and p+, were consistent with other studies and found to be superior to those obtained with SiN passivation. ¶ Stoichiometric SiN films were used to passivate the front and rear surfaces of various solar cell structures. Simplified PERC cells fabricated on 0.3.cm p-type silicon, with either a planar or random pyramid textured front surface, produced high Voc’s of 665-670mV and conversion efficiencies up to 19.7%, which are amongst the highest obtained for SiN passivated solar cells. Bifacial solar cells fabricated on planar, high resistivity n-type substrates (20.cm) demonstrated Voc’s up to 675mV, the highest ever reported for an all-SiN passivated cell, and excellent bifaciality factors. Planar PERC cells fabricated on gettered 0.2.cm multicrystalline silicon have also demonstrated very high Voc’s of 655-659mV and conversion efficiencies up to 17.3% using a single layer anti-reflection coating. Short-wavelength internal quantum efficiency measurements confirmed the excellent passivation achieved with the optimised stoichiometric SiN films on n+ emitters, while long-wavelength measurements show that there is a loss of short-circuit current at the rear surface of SiN passivated p-type cells. The latter loss is attributed to parasitic shunting, which arises from an inversion layer at the rear surface due to the high fixed charge (positive) density in the SiN layers. It has been demonstrated that that a simple way to reduce the impact of the parasitic shunt is to etch away some of the silicon from the rear contact dots. An alternative is to have locally diffused p+ regions under the rear contacts, and a novel method to form a rear structure consisting of a local Al-BSF with SiN passivation elsewhere, without using photolithography, has been demonstrated.
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Chen, Wan Lam Florence Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "PECVD silicon nitride for n-type silicon solar cells." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41277.

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The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface passivation quality of silicon nitride on n-type silicon, and injection-level dependent lifetime data is used extensively in this thesis to evaluate the surface passivation quality of the silicon nitride films. The thesis covers several aspects, spanning from characterisation and modelling, to process development, to device integration. The thesis begins with a review on the advantages of using n-type silicon for solar cells applications, with some recent efficiency results on n-type silicon solar cells and a review on various interdigitated backside contact structures, and key results of surface passivation for n-type silicon solar cells. It then presents an analysis of the influence of various parasitic effects on lifetime data, highlighting how these parasitic effects could affect the results of experiments that use lifetime data extensively. A plasma enhanced chemical vapour deposition process for depositing silicon nitride films is developed to passivate both diffused and non-diffused surfaces for n-type silicon solar cells application. Photoluminescence imaging, lifetime measurements, and optical microscopy are used to assess the quality of the silicon nitride films. An open circuit voltage of 719 mV is measured on an n-type, 1 Ω.cm, FZ, voltage test structure that has direct passivation by silicon nitride. Dark saturation current densities of 5 to 15 fA/cm2 are achieved on SiN-passivated boron emitters that have sheet resistances ranging from 60 to 240 Ω/□ after thermal annealing. Using the process developed, a more profound study on surface passivation by silicon nitride is conducted, where the relationship between the surface passivation quality and the film composition is investigated. It is demonstrated that the silicon-nitrogen bond density is an important parameter to achieve good surface pas-sivation and thermal stability. With the developed process and deeper understanding on the surface passivation of silicon nitride, attempts of integrating the process into the fab-rication of all-SiN passivated n-type IBC solar cells and laser doped n-type IBC solar cells are presented. Some of the limitations, inter-relationships, requirements, and challenges of novel integration of SiN into these solar cell devices are identified. Finally, a novel metallisation scheme that takes advantages of the different etching and electroless plating properties of different PECVD SiN films is described, and a preliminary evalua-tion is presented. This metallisation scheme increases the metal finger width without increasing the metal contact area with the underlying silicon, and also enables optimal distance between point contacts for point contact solar cells. It is concluded in this thesis that plasma enhanced chemical vapour deposited silicon nitride is well-suited for n-type silicon solar cells.
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McCann, Michelle Jane, and michelle mccann@uni-konstanz de. "Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride." The Australian National University. Faculty of Engineering and Information Technology, 2002. http://thesis.anu.edu.au./public/adt-ANU20040903.100315.

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This thesis discusses the growth of thin-film silicon layers suitable for solar cells using liquid phase epitaxy and the behaviour of oxide LPCVD silicon nitride stacks on silicon in a high temperature ambient.¶ The work on thin film cells is focussed on the characteristics of layers grown using liquid phase epitaxy. The morphology resulting from different seeding patterns, the transfer of dislocations to the epitaxial layer and the lifetime of layers grown using oxide compared with carbonised photoresist barrier layers are discussed. The second half of this work discusses boron doping of epitaxial layers. Simultaneous layer growth and boron doping is demonstrated, and shown to produce a 35um thick layer with a back surface field approximately 3.5um thick.¶ If an oxide/nitride stack is formed in the early stages of cell processing, then characteristics of the nitride may enable increased processing flexibility and hence the realisation of novel cell structures. An oxide/nitride stack on silicon also behaves as a good anti- reflection coating. The effects of a nitride deposited using low pressure chemical vapour deposition on the underlying wafer are discussed. With a thin oxide layer between the silicon and the silicon nitride, deposition is shown not to significantly alter effective life-times.¶ Heating an oxide/nitride stack on silicon is shown to result in a large drop in effective Lifetimes. As long as at least a thin oxide is present, it is shown that a high temperature nitrogen anneal results in a reduction in surface passivation, but does not significantly affect bulk lifetime. The reduction in surface passivation is shown to be due to a loss of hydrogen from the silicon/silicon oxide interface and is characterised by an increase in Joe. Higher temperatures, thinner oxides, thinner nitrides and longer anneal times are all shown to result in high Joe values. A hydrogen loss model is introduced to explain the observations.¶ Various methods of hydrogen re-introduction and hence Joe recovery are then discussed with an emphasis on high temperature forming gas anneals. The time necessary for successful Joe recovery is shown to be primarily dependent on the nitride thickness and on the temperature of the nitrogen anneal. With a high temperature forming gas anneal, Joe recovery after nitrogen anneals at both 900 and 1000oC and with an optimised anti-reflection coating is demonstrated for chemically polished wafers.¶ Finally the effects of oxide/nitride stacks and high temperature anneals in both nitrogen and forming gas are discussed for a variety of wafers. The optimal emitter sheet resistance is shown to be independent of nitrogen anneal temperature. With textured wafers, recovery of Joe values after a high temperature nitrogen anneal is demonstrated for wafers with a thick oxide, but not for wafers with a thin oxide. This is shown to be due to a lack of surface passivation at the silicon/oxide interface.
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Kaminski, Piotr M. "Remote plasma sputtering for silicon solar cells." Thesis, Loughborough University, 2013. https://dspace.lboro.ac.uk/2134/13058.

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The global energy market is continuously changing due to changes in demand and fuel availability. Amongst the technologies considered as capable of fulfilling these future energy requirements, Photovoltaics (PV) are one of the most promising. Currently the majority of the PV market is fulfilled by crystalline Silicon (c-Si) solar cell technology, the so called 1st generation PV. Although c-Si technology is well established there is still a lot to be done to fully exploit its potential. The cost of the devices, and their efficiencies, must be improved to allow PV to become the energy source of the future. The surface of the c-Si device is one of the most important parts of the solar cell as the surface defines the electrical and the optical properties of the device. The surface is responsible for light reflection and charge carrier recombination. The standard surface finish is a thin film layer of silicon nitride deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). In this thesis an alternative technique of coating preparation is presented. The HiTUS sputtering tool, utilising a remote plasma source, was used to deposit the surface coating. The remote plasma source is unique for solar cells application. Sputtering is a versatile process allowing growth of different films by simply changing the target and/or the deposition atmosphere. Apart from silicon nitride, alternative materials to it were also investigated including: aluminium nitride (this was the first use of the material in solar cells) silicon carbide, and silicon carbonitride. All the materials were successfully used to prepare solar cells apart from the silicon carbide, which was not used due to too high a refractive index. Screen printed solar cells with a silicon nitride coating deposited in HiTUS were prepared with an efficiency of 15.14%. The coating was deposited without the use of silane, a hazardous precursor used in the PECVD process, and without substrate heating. The elimination of both offers potential processing advantages. By applying substrate heating it was found possible to improve the surface passivation and thus improve the spectral response of the solar cell for short wavelengths. These results show that HiTUS can deposit good quality ARC for silicon solar cells. It offers optical improvement of the ARC s properties, compared to an industrial standard, by using the DL-ARC high/low refractive index coating. This coating, unlike the silicon nitride silica stack, is applicable to encapsulated cells. The surface passivation levels obtained allowed a good blue current response.
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Römer, Udo [Verfasser]. "Polycrystalline silicon/monocrystalline silicon junctions and their application as passivated contacts for Si solar cells / Udo Römer." Hannover : Technische Informationsbibliothek (TIB), 2016. http://d-nb.info/1096360942/34.

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Helland, Susanne. "Electrical Characterization of Amorphous Silicon Nitride Passivation Layers for Crystalline Silicon Solar Cells." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for materialteknologi, 2011. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-16310.

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High quality surface passivation is important for the reduction of recombination losses in solar cells. In this work, the passivation properties of amorphous hydrogenated silicon nitride for crystalline silicon solar cells were investigated, using electrical characterization, lifetime measurements and spectroscopic ellipsometry. Thin films of varying composition were deposited on p-type monocrystalline silicon wafers by plasma enhanced chemical vapor deposition (PECVD). Highest quality surface passivation was obtained for silicon-rich thin films, where a surface recombination velocity of 30 cm/s was obtained after a heat treatment corresponding to the industrial contact firing process. Electrical characterization of the interface between silicon nitride and silicon was performed by capacitance and conductance measurements. Several challenging aspects related to the interpretation of these measurements were investigated in detail, including charging and discharging, leakage currents, and frequency dependent capacitance.
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Ramanathan, Saptharishi. "Understanding and development of dielectric passivated high efficiency silicon solar cells using spin-on solutions." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44771.

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In this work, spin-on processes were used to improve front- and rear-side technologies of solar cells to increase efficiencies to >20 %. A limited source diffusion process was developed using phosphoric acid dopant solutions developed in-house. An optimal emitter was obtained to be used in conjunction with screen-printed contacts. This emitter was used to improve the efficiency of conventional full aluminum back surface field solar cells to 19.6 %. A streamlined process was then developed to fabricate high-efficiency dielectric rear passivated cells in a single high temperature step. This process combined the diffusion process described earlier with a spin-on dielectric for rear passivation to achieve solar cell efficiencies of ~20%. Several laser candidates were investigated to improve process reproducibility and throughput. Ultra-violet laser with nanosecond pulse width was identified as the optimal choice. Cell efficiencies of ~20% were reproduced using UV laser for ablation of rear dielectric. This cell design and process were transferred to low-cost low-lifetime commercial grade substrates after identifying the optimal substrate characteristics using modeling.
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Cai, Li. "Improved understanding and control of the properties of PECVD silicon nitride and its applications in multicrystalline silicon solar cells." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/15468.

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Boge, Magnus. "Formation of silicon nanostructures in silicon nitride thin films for use in solar cells." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for elektronikk og telekommunikasjon, 2010. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-11058.

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The increase in the world’s demand for energy, and the fact that at one point we will run out of oil and gas which are two major contributers of the world supply of energy toady, are two reasons for why new and reliable energy sources are needed. The solar industry is one of the fastest growing industires, but the price of energy delivered by solar cells is still too high compared to other alternatives. More research is therefore needed in order to drive the price of solar energy down.In this report seven silicon nitride films with different stoichiometry are deposited on silicon substrate by the plasma enhanced chemical vapor de- position (PECVD) method. The deposition conditions are selected in order to enhance the formation of silicon nanoclusters. Silicon nanostructures have interesting properties due quantum effects observed at these dimensions. The most interesting of these properties is the ability to tune the silicon nanos- tructures to absrob ligth at different wavelengths. High energy light cannot be utilized in silicon solar cells. With the application of silicon nanostruc- tures, this light can be absorbed and down-converted to usable light which is then transmitted into the solar cell. This would increase the efficiency of the soalr cell, which results in cheaper energy. Two ensembles of as-deposited and annealed (annealed at 1050◦ C) samples were characterized with dif- ferent techniques in order to find the thickness, composition, light emitting sources and optical constants of the films. The techniques used were ellipsom- etry, photo-luminescence (PL) and transmission electron microscopy (TEM).The results obtained shows that all films are porous (indicated by the low index of refraction). One of the effects of annealing is an increase in the refractive index for all samples, which is an indication that the films have become more compact as a result of the annealing process. PL is obtained for samples with a high flow of ammonia, while samples of a low flow have little or no PL. The annealing process increase the PL observed for samples with a high ammonia flow, while a reduction is observed for the samples with a low flow. TEM images reveals that only one sample has any nanostructures present, so the observed PL is likely related to defect states.
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Davidson, Lauren Michel. "Strategies for high efficiency silicon solar cells." Thesis, University of Iowa, 2017. https://ir.uiowa.edu/etd/5452.

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The fabrication of low cost, high efficiency solar cells is imperative in competing with existing energy technologies. Many research groups have explored using III-V materials and thin-film technologies to create high efficiency cells; however, the materials and manufacturing processes are very costly as compared to monocrystalline silicon (Si) solar cells. Since commercial Si solar cells typically have efficiencies in the range of 17-19%, techniques such as surface texturing, depositing a surface-passivating film, and creating multi-junction Si cells are used to improve the efficiency without significantly increasing the manufacturing costs. This research focused on two of these techniques: (1) a tandem junction solar cell comprised of a thin-film perovskite top cell and a wafer-based Si bottom cell, and (2) Si solar cells with single- and double-layer silicon nitride (SiNx) anti-reflection coatings (ARC). The perovskite/Si tandem junction cell was modeled using a Matlab analytical program. The model took in material properties such as doping concentrations, diffusion coefficients, and band gap energy and calculated the photocurrents, voltages, and efficiencies of the cells individually and in the tandem configuration. A planar Si bottom cell, a cell with a SiNx coating, or a nanostructured black silicon (bSi) cell can be modeled in either an n-terminal or series-connected configuration with the perovskite top cell. By optimizing the bottom and top cell parameters, a tandem cell with an efficiency of 31.78% was reached. Next, planar Si solar cells were fabricated, and the effects of single- and double-layer SiNx films deposited on the cells were explored. Silicon nitride was sputtered onto planar Si samples, and the refractive index and thicknesses of the films were measured using ellipsometry. A range of refractive indices can be reached by adjusting the gas flow rate ratios of nitrogen (N2) and argon (Ar) in the system. The refractive index and thickness of the film affect where the minimum of the reflection curve is located. For Si, the optimum refractive index of a single-layer passivation film is 1.85 with a thickness of 80nm so that the minimum reflection is at 600nm, which is where the photon flux is maximized. However, using a double-layer film of SiNx, the Si solar cell performance is further improved due to surface passivation and lowered surface reflectivity. A bottom layer film with a higher refractive index passivates the Si cell and reduces surface reflectivity, while the top layer film with a smaller refractive index further reduces the surface reflectivity. The refractive indices and thicknesses of the double-layer films were varied, and current-voltage (IV) and external quantum efficiency (EQE) measurements were taken. The double-layer films resulted in an absolute value increase in efficiency of up to 1.8%.
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Book chapters on the topic "Silicon nitride passivated solar cells"

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Laref, A. "Optoelectronic Characteristics of Passivated and Non-passivated Silicon Quantum Dot." In Advances in Silicon Solar Cells, 25–52. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69703-1_2.

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Krimmel, Eberhard F., Rudolf Hezel, Uwe Nohl, and Rainer Bohrer. "Application of Silicon Nitride for Solar Cells." In Si Silicon, 321–62. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-662-09901-8_32.

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Soler, M. A. G., and A. M. Andrade. "Passivated Semicrystalline Silicon Solar Cells: The Effect of Hydrogen Plasma Parameters." In Tenth E.C. Photovoltaic Solar Energy Conference, 290–92. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_73.

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Aberle, A., S. Glunz, W. Warta, J. Kopp, and J. Knobloch. "SiO2-passivated High Efficiency Silicon Solar Cells: Process Dependence of Si-SiO2 Interface Recombination." In Tenth E.C. Photovoltaic Solar Energy Conference, 631–35. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_161.

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Saitoh, Tadashi, Osamu Kamataki, and Shigeo Iida. "Optimization of Antireflection Film Structures for Surface-Passivated Crystalline Silicon Solar Cells using Spectroscopic Ellipsometry." In Tenth E.C. Photovoltaic Solar Energy Conference, 62–65. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_16.

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Jaeger, K., and R. Hezel. "Low Temperature Back Surface Passivation of Solar Cells by Plasma Silicon Nitride." In Seventh E.C. Photovoltaic Solar Energy Conference, 806–10. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3817-5_142.

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Hezel, R., and K. Jaeger-Hezel. "Silicon Nitride and Aluminum Oxide—Multifunctional Dielectric Layers Crucial for the Progress of Silicon Solar Cells." In Springer Series in Optical Sciences, 43–64. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-22864-4_4.

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Schindler, R., N. Lewalski, and B. Voss. "CHARACTERIZATION OF HYDROGEN PASSIVATED POLYCRYSTALLINE SILICON SOLAR CELLS." In Advances In Solar Energy Technology, 112–18. Elsevier, 1988. http://dx.doi.org/10.1016/b978-0-08-034315-0.50027-6.

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Peng Ling, Zhi, Zheng Xin, Puqun Wang, Ranjani Sridharan, Cangming Ke, and Rolf Stangl. "Double-Sided Passivated Contacts for Solar Cell Applications: An Industrially Viable Approach Toward 24% Efficient Large Area Silicon Solar Cells." In Silicon Materials. IntechOpen, 2019. http://dx.doi.org/10.5772/intechopen.85039.

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Baikie, lain, and Gregor Forsyth. "Variable temperature surface photovoltage imaging of oxide and nitride coated multicrystalline silicon solar cells." In Microscopy of Semiconducting Materials 2003, 519–22. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074636-118.

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Conference papers on the topic "Silicon nitride passivated solar cells"

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Wen, Yuli, ThiCamTu Huynh, and Keisuke Ohdaira. "Tunnel Nitride Passivated Contacts for Silicon Solar Cells Formed by Cat-CVD." In 2020 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2020. http://dx.doi.org/10.7567/ssdm.2020.f-10-03.

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Kunst, M., O. Abdallah, and F. Wuensch. "Silicon-nitride for solar cells." In Photonics Europe, edited by Andreas Gombert. SPIE, 2006. http://dx.doi.org/10.1117/12.661521.

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Aberle, A. G., and R. Hezel. "Advances in low-temperature passivated silicon solar cells." In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE, 1996. http://dx.doi.org/10.1109/pvsc.1996.564022.

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Rinio, Markus, Dietmar Borchert, Stefan Muller, Stephan Riepe, Rainer Tolle, Lars Janben, and Heinrich Kurz. "Industrial Rear Sin-Passivated Multicrystalline Silicon Solar Cells." In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279646.

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LaSalvia, Vincenzo, William Nemeth, Jacob T. Boyer, Daniel L. Lepkowski, Emily A. Makoutz, Theresa E. Saenz, Steven A. Ringel, Tyler J. Grassman, and Emily L. Warren. "Improving GaAsP/Si Tandem Solar Cells Using Silicon Passivated Contacts." In 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC). IEEE, 2020. http://dx.doi.org/10.1109/pvsc45281.2020.9300356.

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Stuckelberger, J., S. Hanni, B. Niesen, F. J. Haug, and C. Ballif. "Passivated interfaces in fluorinated microcrystalline silicon thin film solar cells." In 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC). IEEE, 2015. http://dx.doi.org/10.1109/pvsc.2015.7356310.

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Mendez, Jesus A., Isidro Martin, Gema Lopez, Pablo Ortega, Albert Orpella, and Ramon Alcubilla. "Silicon nitride layers for DopLa-IBC solar cells." In 2017 Spanish Conference on Electron Devices (CDE). IEEE, 2017. http://dx.doi.org/10.1109/cde.2017.7905248.

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DIENG, Babacar, Modou BEYE, and Amadou SEIDOU MAIGA. "Optimization of silicon nitride antireflective nanostructures for silicon solar cells." In 2018 7th International Energy and Sustainability Conference (IESC). IEEE, 2018. http://dx.doi.org/10.1109/iesc.2018.8439954.

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Merchant, N., H. Jiang, A. Shaikh, E. Graddy, and D. Zhang. "Screen-printed reflector pastes for back passivated crystalline silicon solar cells." In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186389.

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Guthrey, Harvey, Abhijit S. Kale, William Nemeth, Matthew Page, Sumit Agarwal, David Young, Mowafak Al-Jassim, and Paul Stradins. "Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells." In 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). IEEE, 2019. http://dx.doi.org/10.1109/pvsc40753.2019.8981371.

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