Academic literature on the topic 'Silicon nitride'

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Journal articles on the topic "Silicon nitride"

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Yusrini, Marita, and Yaacob Iskandar Idris. "Dispersion of Strengthening Particles on the Nickel-Iron-Silicon Nitride Nanocomposite Coating." Advanced Materials Research 647 (January 2013): 705–10. http://dx.doi.org/10.4028/www.scientific.net/amr.647.705.

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Nickel-iron-silicon nitride nanocomposite coatings were prepared by electrodeposition technique. The deposition was performed at current density of 11.5 A dm-2. Nano-size silicon nitride was mixed in the electrolyte bath as dispersed phase. The effects of silicon nitride nanoparticulates in the nickel-iron nanocomposite coating were investigated in relation to the concentration of silicon nitride in the plating bath. X-ray diffraction (XRD) analysis showed that the deposited nickel iron alloy coating has face-centered cubic structure (FCC). However, a mixture of body-centered cubic (BCC) and face-centered cubic (FCC) phases were observed for nickel iron-silicon nitride nanocomposite coatings. . The change of crystal structure to FCC + BCC is due to the higher Fe content in the deposit. The crystallite size of Ni-Fe nanocomposite coating decreased with increasing concentration of silicon nitride in the coating. An increase of silicone nitride in electrolyte solution leads to the increase in surface roughness of the nickel-iron-silicon nitride nanocomposite.
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Yang, S., R. F. Gibson, G. M. Crosbie, and R. L. Allor. "Thermal Cycling Effects on Dynamic Mechanical Properties and Crystallographic Structures of Silicon Nitride-Based Structural Ceramics." Journal of Engineering for Gas Turbines and Power 119, no. 2 (April 1, 1997): 279–84. http://dx.doi.org/10.1115/1.2815571.

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Thermal cycling effects on dynamic mechanical properties of hot pressed silicon nitride (HPSN) based structural ceramics were investigated in a simulated thermal cycling environment from room temperature up to 1100°C. Two monolithic silicon nitrides and two silicon nitride composites reinforced with silicon carbide whiskers were studied in such an environment. Experiments show that the dynamic mechanical properties of the tested materials are influenced by thermal cycle. The materials stiffened slightly while damping capacity decreased slightly during each thermal cycle. X-ray diffraction (XRD) was subsequently used to examine the corresponding crystallographic alterations. The XRD patterns show that the amorphous glass phases in the silicon nitride matrix were partially crystallized during thermal cycling.
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Sung, Rak Joo, Seung Ho Kim, Takafumi Kusunose, Tadachika Nakayama, Tohru Sekino, and Koichi Niihara. "Mechanical and Wear Properties of Silicon Nitride Added with AlN." Materials Science Forum 486-487 (June 2005): 209–12. http://dx.doi.org/10.4028/www.scientific.net/msf.486-487.209.

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Silicon nitride with various amount of AlN as a sintering aid was sintered by a hot press method. Densified silicon nitrides were obtained, and it was found that the mechanical and wear properties were dependent on the contents of AlN. The effect of a/b phase on the mechanical and wear properties of silicon nitride was investigated. The properties were changed depending on the amount of a/b phase. In the brittle materials, tribological behaviors were dependent on the microstructure as well as hardness and fracture toughness. We focus on the relationship between the microstructure and mechanical/wear properties of silicon nitride including AlN additives.
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Gritsenko, Vladimir A., Alexandr V. Shaposhnikov, W. M. Kwok, Hei Wong, and Georgii M. Jidomirov. "Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces." Thin Solid Films 437, no. 1-2 (August 2003): 135–39. http://dx.doi.org/10.1016/s0040-6090(03)00601-1.

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Park, Dong-Soo, and Chang-Won Kim. "Anisotropy of Silicon Nitride with Aligned Silicon Nitride Whiskers." Journal of the American Ceramic Society 82, no. 3 (December 22, 2004): 780–82. http://dx.doi.org/10.1111/j.1151-2916.1999.tb01836.x.

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Hadfield, Mark, Wei Wang, and Andrew Wereszczak. "Mechanical Properties of Silicon Nitride Using RUS & C-Sphere Methodology." Advances in Science and Technology 64 (October 2010): 71–75. http://dx.doi.org/10.4028/www.scientific.net/ast.64.71.

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Silicon nitride is a type of engineering ceramic which has been used in ball bearing and other rolling contact applications owing to its good fatigue life, high temperature strength and tribological performance. In this paper, the mechanical properties of Hot Isostatically Pressed (HIPed) and Sintered and Reaction Bonded Silion Nitride (SRBSN) have been studied. The elastic modulus and poisson’s ratio of three types of commerical grade HIPed silicon nitride, and ground SRBSN with three surface condidtions were measured using a Resonance Ultrasound Spectroscopy (RUS). The RUS measurement reveals the variation of elastic properties across different types of HIPed silicon nitride specimens. The surface strength of silicon nitride are studied using a C-sphere specimen, and the results show that SRBSN with three different surface finishing conditions show varied surface strength. The RUS and C-sphere techniques can potentially be used to sample the quality and consistency of ball bearing elements.
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Blumenthal, Daniel J., Rene Heideman, Douwe Geuzebroek, Arne Leinse, and Chris Roeloffzen. "Silicon Nitride in Silicon Photonics." Proceedings of the IEEE 106, no. 12 (December 2018): 2209–31. http://dx.doi.org/10.1109/jproc.2018.2861576.

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Hampshire, Stuart. "Silicon Nitride Ceramics." Materials Science Forum 606 (October 2008): 27–41. http://dx.doi.org/10.4028/www.scientific.net/msf.606.27.

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Silicon nitride is one of the major structural ceramics that has been developed following many years of intensive research. It possesses high flexural strength, high fracture resistance, good creep resistance, high hardness and excellent wear resistance. These properties arise from the processing of the ceramic by liquid phase sintering and the development of microstructures in which high aspect ratio grains and intergranular glass phase lead to excellent fracture toughness and high strength. The glass phase softens at high temperature and controls the creep rate of the ceramic. The purpose of this review is to examine the development of silicon nitride and the related sialons and their processing into a range of high-grade structural ceramic materials. The development of knowledge of microstructure–property relationships in silicon nitride materials is outlined, particularly recent advances in understanding the effects of grain boundary chemistry and structure on mechanical properties. This review should be of interest to scientists and engineers concerned with the processing and use of ceramics for structural engineering applications.
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MECARTNEY, M. L., R. SINCLAIR, and R. E. LOEHMAN. "Silicon Nitride Joining." Journal of the American Ceramic Society 68, no. 9 (September 1985): 472–78. http://dx.doi.org/10.1111/j.1151-2916.1985.tb15811.x.

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Horiuchi, Noriaki. "Silicon nitride success." Nature Photonics 6, no. 7 (June 28, 2012): 412. http://dx.doi.org/10.1038/nphoton.2012.169.

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Dissertations / Theses on the topic "Silicon nitride"

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Razzell, Anthony Gordon. "Silicon carbide fibre silicon nitride matrix composites." Thesis, University of Warwick, 1992. http://wrap.warwick.ac.uk/110559/.

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Silicon carbide fibre/silicon nitride matrix composites have been fabricated using the reaction bonded silicon nitride (RBSN) and sintered reaction bonded silicon nitride (SRBSN) processing routes. A filament winding and tape casting system was developed to produce sheets of parallel aligned fibres within a layer of green matrix ('prepreg') which were cut, stacked and hot pressed to form a plate. This was nitrided and (in the case of SRBSN matrix composites) hot pressed at 1700°C to density the matrix. The magnesia (MgO) and the yttria/alumina (Y2O3/AI2O3) additive SRBSN systems were investigated as matrices for ease of processing and compatibility with the matrix. The MgO additive Si3N4 matrix reacted with the outer carbon rich layer on the surface of the fibres, framing a reaction layer approx. 2pm in thickness. A reaction layer was also observed with the Y2O3/AI2O3 additive matrix, but was thinner (< 0.5um), and was identified as silicon carbide from the electron diffraction pattern. X-ray mapping in the SEM was used to investigate the spatial distribution of elements within the interface region to a resolution < lum, including light elements such as carbon. The 6wt%Y203/ 2wt%Al203 additive SRBSN system was chosen for more detailed investigation, and the majority of characterisation was performed using this composition. Oxidation of composite samples was carried out at temperatures between 1000°C and 1400°C for up to 1000 hours. Little damage was visible after 100 hours for all temperatures, corresponding to a relatively small drop in post oxidation bend strength. After 1000 hours at 1000°C both carbon rich outer layers and the central carbon core of the fibre were removed. Samples were severely oxidised after 1000 hours at 1400°C, having a glass layer on the outer surface and replacement of near surface fibre/matrix interfaces with glass. The post oxidation bend strengths for both conditions were approx.2/3 of the as fabricated strength. Less damage was observed after 1000 hours at 1200°C, and the post oxidation bend strength was higher than the 1000°C and 1400°C samples. Mechanical properties of the SRBSN matrix composite were investigated at room temperature and elevated temperatures (up to 1400°C). The average room temperature values for matrix cracking stress and ultimate strength (in bend) were 651.1 and 713.2 MPa respectively, with corresponding Weibull moduli of 5.7 and 8.7. The stresses are comparable to similar monolithic silicon nitrides. Room temperature tensile matrix cracking and ultimate strength were 232MPa and 413MPa, lower than the bend test results, which were attributed to bending stresses in the sample, lowering the apparent failure stresses. The samples failed in a composite like manner (i.e. controlled rather than catastrophic failure), with a substantially higher woric of fracture than monolithic materials. The average matrix cracking and ultimate bend strength at 1200°C were 516MPa and 554MPa, dropping to 178MPa and 486MPa at 1400°C (the matrix cracking stress was indistinct at 1400°C due to plasticity). The creep and stress rupture properties at 1300°C were investigated in four point bend, using dead-weight loading. The creep rate was KH/s at a stress of 200MPa, lower than a hot pressed silicon nitride with MgO additive, and higher than a hot isostatically pressed Y2O2/SÍO2 additive silicon nitride. A cavitation creep mechanism was deduced from the stress exponent, which was >1. Failure by stress rupture did not have a lower limit, which is also associated with cavitation of the amorphous grain boundary phase.
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Durham, Simon J. P. "Carbothermal reduction of silica to silicon nitride powder." Thesis, McGill University, 1989. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=74221.

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The processing conditions for carbothermal reduction of silica to silicon nitride was found to be sensitive to several key processing parameters: namely the intimacy of mixing of carbon and silica, the temperature, the specific high surface area of carbon, the nitrogen gas purity and the action of the nitrogen gas passing through the reactants.
Sol-gel processing was found to provide superior mixing conditions over dry mixing, which allowed for complete conversion to silicon nitride at optimum carbon:silica ratios of 7:1. The ideal reaction temperature was found to be in the range of 1500$ sp circ$C to 1550$ sp circ$C. Suppression of silicon oxynitride and silicon carbide was achieved by ensuring that: (a) the nitrogen gas was gettered of oxygen, and (b) that the gas passed through the reactants. Thermodynamic modelling of the Si-O-N-C system showed that ordinarily the equilibrium conditions for the formation of silicon nitride are very delicate. Slight deviations away from equilibrium leads to the formation of non-equilibrium species such as silicon carbide caused by the build-up of carbon monoxide. Reaction conditions such as allowing nitrogen gas to pass through the reactants beneficially moves the reaction equilibrium well away from the silicon carbide and silicon oxynitride stability regions.
The particle size of silicon nitride produced from carbon and silica precursors was of the order of 2-3 $ mu$m and could only be reduced to sub-micron range by seeding with ultra-fine silicon nitride. It was shown that the mechanism of nucleation and growth of unseeded reactants was first nucleation on the carbon by the reaction between carbon, SiO gas and nitrogen (gas-solid reaction), and then growth of the particles by the gas phase reaction (CO, SiO, N$ sb2$).
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Hadian, Ali Mohammad. "Joining of silicon nitride-to-silicon nitride and to molybdenum for high-temperature applications." Thesis, McGill University, 1993. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=41370.

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The evolution of advanced ceramic materials over the past two decades has not been matched by improvements in ceramic joining science and technology, particularly for high temperature applications. Of the techniques being evaluated for joining ceramics, brazing has been found to be the simplest and most promising method of fabricating both ceramic/ceramic and ceramic/metal joints. A key factor in ceramic brazing is wetting of the ceramic by the filler metal.
This study deals with the application of brazing for the fabrication of $ rm Si sb3N sb4/Si sb3N sb4$ and $ rm Si sb3N sb4/Mo$ joints using Ni-Cr-Si brazing alloys based on AWS BNi-5 (Ni-18Cr-19Si atom%). Thermodynamic calculations were performed to predict wetting at $ rm Si sb3N sb4$/Ni-Cr-Si alloys interfaces. By using some simplifying assumptions and suitable scaling of the reaction, the model predicted that Ni-Cr-Si alloys with Ni/Cr = 3.5 and X$ sb{ rm Si}$ $<$ 0.25 would react chemically with and wet $ rm Si sb3N sb4$. Good agreement was found between the theoretical calculations and experimental results.
Brazing experiments were carried out to study the joinability of $ rm Si sb3N sb4$ with various Ni-Cr-Si filler metals which had already shown good wetting characteristics on $ rm Si sb3N sb4$. The $ rm Si sb3N sb4/Si sb3N sb4$ joints formed with a 10 atom% Si brazing alloy exhibited the highest strength ($ approx$120 MPa) which was mainly due to the presence of a CrN reaction layer at the ceramic/filler metal interface. The high temperature four-point bend strengths of $ rm Si sb3N sb4/Si sb3N sb4$ joints were markedly higher than the room temperature values. A high strength of about 220 MPa was achieved when the joints were tested at 900$ sp circ$C.
From the results of the $ rm Si sb3N sb4/Mo$ joining experiments it was found that the joint quality and microstructure were strongly influenced by the composition of the filler metal and such brazing variables as time and temperature. Of all the $ rm Si sb3N sb4$/Mo joints, those made with the S10 brazing alloy at 1300$ sp circ$C for 1 min. exhibited the highest strength of 55 MPa.
Finally, in all the cases, the shear strength of all the joints was found to be lower than their four-point bend values.
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Yi, Jae Hyung. "Silicon rich nitride for silicon based laser devices." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/44315.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2008.
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Includes bibliographical references.
Silicon based light sources, especially laser devices, are the key components required to achieve a complete integrated silicon photonics system. However, the fundamental physical limitation of the silicon material as light emitter and the limited understanding of tli~ excitation mechanism of Er in dielectric media by optical and electrical pumping methods impedes the progress of the research activities in this area. Silicon rich nitride (SRN) has been investigated as a strong candidate for silicon based laser devices. SRN has many advantages over other Si-based materials systems. These advantages include a high electrical injection level at low voltages, a low annealing temperature for Si nanocluster (Si-nc) formation and a large refractive index for strong optical confinement. Strong light emission from localized states in Si-nc embedded in SRN was demonstrated with a PLQE (Photoluminescence Quantum Efficiency) of 7%. This effect was confirmed through several experiments and first principle calculations. Thue Morse aperiodic structures were fabricated with light emitting SRN and SiO2 materials, for the first time. Through the resonance phenomena achieved using this approach an emission enhancement of a factor of 6 was demonstrated experimentally. A sequential annealing technique was investigated to enhance the light emission from the Si-nc based light emitter. Electrical injection was greatly improved with annealing treatments of SRN based devices. In particular, bipolar electrical injection into SRN led to electroluminescence which was comparable to photoluminescence in peak shape and spectral position. Er doped SRN (Er:SRN) was fabricated through a co-sputter technique to achieve light emission at the wavelength of 1.54 [mu]m.
(cont.) Energy transfer from SRN td Er was confirmed and shown to have a strong dependence on Si content. Si racetrack resonator structures with a low loss value of 2.5 dB/cm were fabricated through a Local Oxide (LOCOS) process and coupled with an Er:SRN layer to investigate gain behavior. Electrical injection properties into the Er:SRN layer were investigated and the electroluminescent device was fabricated. A detailed discussion on optical and electrical excitation of Er is provided to clarify the difference of the Er excitation mechanisms. A comparison of key simulation parameters used within the two level equations for optical and electrical excitation of Er atoms is provided to explain how the parameters contribute to each excitation mechanism. The most significant differences between the parameters and excitation mechanisms are also explained. Finally a summary of important factors to achieve a silicon based laser is provided and discussed for future investigation based on the experimental data and the investigation presented in this work.
by Jae Hyung Yi.
Ph.D.
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Li, Wenyu. "The fabrication of silicon nitride-titanium nitride composite materials." Thesis, University of Leeds, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305875.

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Saxena, Pawan. "Slip casting of silicon nitride." Thesis, McGill University, 1992. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=56974.

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Slip casting is a well established technique for the manufacture of traditional ceramic bodies, such as clays and whitewares. It combines complex shaping with high green densities, resulting in low shrinkage and good densification behaviour.
This method, however, has received little attention in the field of engineering ceramics especially with regard to silicon nitride. Commercial fabrication of silicon nitride, a major contender for high temperature applications due to its excellent thermomechanical properties, has been confined to hot pressing. This is an expensive process and has geometrical limitations.
Slip casting, followed by sintering, has been identified as a potentially economical alternative fabrication method, however a number of parameters have to be optimized before a good slip cast silicon nitride body can be made. The aim of the present work is to control parameters such as pH, viscosity and deflocculation in order to form dense, homogeneous, slip cast silicon nitride bodies.
A detailed investigation of the rheological properties of Si$ sb3$N$ sb4$ and careful control of processing parameters, made it possible to produce slip cast Si$ sb3$N$ sb4$ bodies having up to 97% TD on sintering. Mechanical strength values obtained by slip casting were compared with those obtained by die-pressing. Strength values of the slip cast material was limited by iron inclusions entrained in processing.
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Ovri, J. E. O. "Diametral-compression of silicon nitride." Thesis, University of Manchester, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378585.

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Knight, Patrick J. "Nitride formation at silicon surfaces." Thesis, University of Southampton, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238903.

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Rockett, Chris H. "Flexural Testing of Molybdenum-Silicon-Boron Alloys Reacted from Molybdenum, Silicon Nitride, and Boron Nitride." Thesis, Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16293.

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MoSiB alloys show promise as the next-generation turbine blade material due to their high-temperature strength and oxidation resistance afforded by a protective borosilicate surface layer. Powder processing and reactive synthesis of these alloys has proven to be a viable method and offers several advantages over conventional melt processing routes. Microstructures obtained have well-dispersed intermetallics in a continuous matrix of molybdenum solid-solution (Mo-ss). However, bend testing of pure Mo and Mo-ss samples has shown that, while the powder processing route can produce ductile Mo metal, the hardening effect of Si and B in solid-solution renders the matrix brittle. Testing at elevated temperatures (200°C) was performed in order to determine the ductile-to-brittle transition temperature of the metal as an indication of ductility. Methods of ductilizing the Mo-ss matrix such as annealing and alloying additions have been investigated.
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Martinelli, Antonio Eduardo. "Diffusion bonding of silicon carbide and silicone nitride to molybdenum." Thesis, McGill University, 1995. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=40191.

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This study focuses on various aspects of solid-state diffusion bonding of two ceramic-metal combinations, namely: silicon carbide-molybdenum (SiC-Mo), and silicon nitride-molybdenum (Si$ rm sb3N sb4$-Mo). Single SiC-Mo and $ rm Si sb3N sb4$-Mo joints were produced using hot-uniaxial pressing. The microstructure of the resulting interfaces were characterized by image analysis, scanning electron microscopy (SEM), electron probe micro-analysis (EPMA), and X-ray diffraction (XRD). The mechanical properties of the joints were investigated using shear strength testing, depth sensing nanoindentation, and neutron diffraction for residual stress measurement.
SiC was solid-state bonded to Mo at temperatures ranging from 1000$ sp circ$C to 1700$ sp circ$C. Diffusion of Si and C into Mo resulted in a reaction layer containing two main phases: $ rm Mo sb5Si sb3$ and Mo$ sb2$C. At temperatures higher than 1400$ sp circ$C diffusion of C into $ rm Mo sb5Si sb3$ stabilized a ternary phase of composition $ rm Mo sb5Si sb3$C. At 1700$ sp circ$C, the formation of MoC$ rm sb{1-x}$ was observed as a consequence of bulk diffusion of C into Mo$ sb2$C. A maximum average shear strength of 50 MPa was obtained for samples hot-pressed at 1400$ sp circ$C for 1 hour. Higher temperatures and longer times contributed to a reduction in the shear strength of the joints, due to the excessive growth of the interfacial reaction layer. $ rm Si sb3N sb4$ was joined to Mo in vacuum and nitrogen, at temperatures between 1000$ sp circ$C and 1800$ sp circ$C, for times varying from 15 minutes to 4 hours. Dissociation of $ rm Si sb3N sb4$ and diffusion of Si into Mo resulted in the formation of a reaction layer consisting, initially, of $ rm Mo sb3$Si. At 1600$ sp circ$C (in vacuum) Mo$ sb3$Si was partially transformed into $ rm Mo sb5Si sb3$ by diffusion of Si into the original silicide, and at higher temperatures, this transformation progressed extensively within the reaction zone. Residual N$ sb2$ gas, which originated from the decomposition of $ rm Si sb3N sb4,$ dissolved in the Mo, however, most of the gas escaped during bonding or remained trapped at the original $ rm Si sb3N sb4$-Mo interface, resulting in the formation of a porous layer. Joining in N$ sb2$ increased the stability of $ rm Si sb3N sb4,$ affecting the kinetics of the diffusion bonding process. The bonding environment did not affect the composition and morphology of the interfaces for the partial pressures of N$ sb2$ used. A maximum average shear strength of 57 MPa was obtained for samples hot-pressed in vacuum at 1400$ sp circ$C for 1 hour.
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Books on the topic "Silicon nitride"

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Shigeyuki, Sōmiya, Mitomo Mamoru, and Yoshimura Masahiro 1942-, eds. Silicon nitride. London: Elsevier Applied Science, 1990.

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1938-, Belyĭ V. I., and Rzhanov Anatoliĭ Vasilʹevich, eds. Silicon nitride in electronics. Amsterdam: Elsevier, 1988.

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Razzell, A. G. Silicon carbide fibre silicon nitride matrix composites. [s.l.]: typescript, 1992.

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Hierra, Emiliano Jose, and Jesus Anjel Salazar. Silicon nitride: Synthesis, properties, and applications. Hauppauge, N.Y: Nova Science Publishers, 2011.

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T, Fang H., and United States. National Aeronautics and Space Administration., eds. Improved silicon nitride for advanced heat engines. [Washington, DC]: National Aeronautics and Space Administration, 1991.

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T, Fang H., and United States. National Aeronautics and Space Administration., eds. Improved silicon nitride for advanced heat engines. [Washington, DC]: National Aeronautics and Space Administration, 1987.

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Gates, Richard Stephen. Boundary lubrication of silicon nitride. Gaithersburg, MD: U.S. Department of Commerce, Technology Administration, National Institute of Standards and Technology, 1995.

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Vivien, Mitchell, and Mitchell Market Reports, eds. Silicon nitride and the sialons. 3rd ed. Oxford, UK: Elsevier Advanced Technology, 1993.

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Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (9th 2007 Chicago, Ill.). Silicon nitride, silicon dioxide, and emerging dielectrics 9. Edited by Sah R. E, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2007.

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Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (9th 2007 Chicago, Ill.). Silicon nitride, silicon dioxide, and emerging dielectrics 9. Edited by Sah R. E, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2007.

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Book chapters on the topic "Silicon nitride"

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Gooch, Jan W. "Silicon Nitride." In Encyclopedic Dictionary of Polymers, 665. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_10658.

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Irvine, William M. "Silicon Nitride." In Encyclopedia of Astrobiology, 2270–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-44185-5_1801.

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Irvine, William M. "Silicon Nitride." In Encyclopedia of Astrobiology, 1515. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-11274-4_1801.

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Aardahl, C. L., and J. W. Rogers. "Silicon Nitride." In Inorganic Reactions and Methods, 96–97. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145333.ch58.

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Irvine, William M. "Silicon Nitride." In Encyclopedia of Astrobiology, 1. Berlin, Heidelberg: Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-642-27833-4_1801-4.

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Hampshire, Stuart. "Silicon Nitride Ceramics." In Engineered Ceramics, 77–97. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119100430.ch5.

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Gooch, Jan W. "Silicon Nitride Whiskers." In Encyclopedic Dictionary of Polymers, 665–66. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_10659.

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Petzow, G., and M. Herrmann. "Silicon Nitride Ceramics." In Structure and Bonding, 47–167. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/3-540-45623-6_2.

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Walkosz, Weronika. "Silicon Nitride Ceramics." In Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces, 1–10. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-7817-2_1.

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Irvine, William M. "Silicon Nitride (SiN)." In Encyclopedia of Astrobiology, 2760. Berlin, Heidelberg: Springer Berlin Heidelberg, 2023. http://dx.doi.org/10.1007/978-3-662-65093-6_1801.

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Conference papers on the topic "Silicon nitride"

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Choi, Sung R. "Foreign Object Damage in Gas-Turbine Grade Silicon Nitrides by Silicon Nitride Ball Projectiles." In ASME Turbo Expo 2009: Power for Land, Sea, and Air. ASMEDC, 2009. http://dx.doi.org/10.1115/gt2009-59031.

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Foreign object damage (FOD) behavior of two gas-turbine grade silicon nitrides (AS800 and SN282) was determined with a considerable sample size at ambient temperature using impact velocities ranging from 50 to 225 m/s by 1.59-mm diameter silicon nitride ball projectiles. The degree of impact damage as well as of post-impact strength degradation increased with increasing impact velocity, and was greater in SN282 than in AS800 silicon nitride. The critical impact velocity in which target specimens fractured catastrophically was remarkably low: about 200 and 130 m/s, respectively, for AS800 and SN282. The difference in the critical impact velocity and impact damage between the two target silicon nitrides was attributed to the fracture toughness of the target materials. The FOD by silicon nitride projectiles was significantly greater than that by steel ball projectiles. Prediction of impact force was made based on a yield model and compared with the conventional Hertzian contact-stress model.
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Santhanam, Sridhar, Kei-Peng Jen, and Zachary N. Wing. "Enhancing Toughness of Silicon Nitrides With Nanoscale Additions." In ASME 2008 International Mechanical Engineering Congress and Exposition. ASMEDC, 2008. http://dx.doi.org/10.1115/imece2008-68871.

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Silicon nitride ceramics for applications in demanding environments require high toughness and adequate hardness. A well known route to making tough silicon nitride compositions is to control the grain size distribution. For beta silicon nitrides, the grain shapes in the form of their acicularity is known to be very important too. In this paper, we report on the use of multiple strategies to achieve increased toughness and toughening in silicon nitrides. These strategies include the use of a blend of nano-scale and micron-scale silicon nitride powders, the use of nano-scale sintering aids, and the addition of carbon nanotubes. Microstructures and mechanical properties are determined for these hot-pressed ceramics and are compared with a baseline silicon nitride prepared with conventional micron-scale powders. Hardness and fracture toughness are determined at room temperature using hardness indents produced by a macro Vickers hardness indenter. The toughening ability of these ceramics are compared by R-curve measurements. Grain boundary debonding and crack path deviation are identified as toughening mechanisms.
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Steimle, R. F., R. A. Rao, B. Hradsky, R. Muralidhar, M. Sadd, M. Ramon, S. Straub, et al. "Hybrid Silicon Nanocrystal Silicon Nitride Memory." In 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.e-9-2.

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Olinger, Dale Kent, Bertrand G. Bovard, and H. Angus Macleod. "Reactive ion-assisted deposition of boron nitride and aluminum nitride." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.thnn5.

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Vacuum deposition techniques for boron nitride, aluminum nitride, and mixtures of the two materials have been developed. Starting materials of the pure metal or nitrides are electron-beam evaporated. The films are grown on glass, fused silica, and silicon substrates by reactive nitrogen ion-assisted deposition. A large 12 cm Kaufman-type ion source was used in this work. The goals of the study included development of these materials for visible-wa velength coatings and examination of the potential for Restrahlen mirrors in the infrared region. Matching deposition parameters that gave acceptable transmission characteristics in the visible spectrum for each material were developed. A technique was then developed to accomplish simultaneous codeposition of the two materials. Analysis of the films has been accomplished through both visible and infrared spectrophotometry. Results for boron nitride, aluminum nitride, and mixtures of the two are presented. Continuation work is planned to further develop these materials and expand the analysis techniques employed.
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Baets, Roel, Ananth Z. Subramanian, Stéphane Clemmen, Bart Kuyken, Peter Bienstman, Nicolas Le Thomas, Günther Roelkens, Dries Van Thourhout, Philippe Helin, and Simone Severi. "Silicon Photonics: silicon nitride versus silicon-on-insulator." In Optical Fiber Communication Conference. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/ofc.2016.th3j.1.

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Winchester, Kevin J., Sue M. Spaargaren, and John M. Dell. "Transferable silicon nitride microcavities." In Asia Pacific Symposium on Microelectronics and MEMS, edited by Kevin H. Chau and Sima Dimitrijev. SPIE, 1999. http://dx.doi.org/10.1117/12.364511.

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Srinivasan, Kartik, Marcelo Davanço, and Karen Grutter. "Silicon nitride optomechanical crystals." In Frontiers in Optics. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/fio.2014.fw4b.2.

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Armin, Fahimeh, Frederic Nabki, and Michaël Ménard. "Compact Silicon Nitride Interferometer." In Frontiers in Optics. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/fio.2021.fth6b.5.

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Zervas, Michael. "Manufacturing Aspects for All-nitride-core Ultra-Low Loss Silicon Nitride Photonics Platform." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2018. http://dx.doi.org/10.1364/iprsn.2018.ith3b.3.

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Sun, Ellen Y., Harry E. Eaton, John E. Holowczak, and Gary D. Linsey. "Development and Evaluation of Environmental Barrier Coatings for Silicon Nitride." In ASME Turbo Expo 2002: Power for Land, Sea, and Air. ASMEDC, 2002. http://dx.doi.org/10.1115/gt2002-30628.

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Environmental barrier coatings (EBCs) are required for applications of silicon nitride (Si3N4) and silicon carbide (SiC) based materials in gas turbine engines because of the accelerated oxidation of Si3N4 and SiC and subsequent volatilization of silica in the high temperature high-pressure steam environment. EBC systems for silicon carbide fiber reinforced silicon carbide ceramic matrix composites (SiC/SiC CMC’s) were first developed and have been demonstrated via long-term engine tests. Recently, studies have been carried out at United Technologies Research Center (UTRC) to understand the temperature capability of the current celsian-based EBC systems and its suitability for silicon nitride ceramics concerning thermal expansion mismatch between the EBC coating and silicon nitride substrates. This paper will present recent progress in improving the temperature capability of the celsian –based EBC systems and discuss their effectiveness for silicon nitride.
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Reports on the topic "Silicon nitride"

1

Sawyer, J., B. Buchan, R. Duiven, M. Berger, J. Cleveland, and J. Ferri. Cordierite silicon nitride filters. Office of Scientific and Technical Information (OSTI), February 1992. http://dx.doi.org/10.2172/6887066.

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Buljan, S. T., J. G. Baldoni, J. Neil, and G. Zilberstein. Dispersoid-Toughened Silicon Nitride Composites. Fort Belvoir, VA: Defense Technical Information Center, September 1988. http://dx.doi.org/10.21236/ada351520.

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Gates, Richard S., Richard S. Gates, and Stephen M. Hsu. Boundary lubrication of silicon nitride. Gaithersburg, MD: National Institute of Standards and Technology, 1995. http://dx.doi.org/10.6028/nist.sp.876.

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Jan W. Nowok, John P. Hurley, and John P. Kay. SiAlON COATINGS OF SILICON NITRIDE AND SILICON CARBIDE. Office of Scientific and Technical Information (OSTI), June 2000. http://dx.doi.org/10.2172/824976.

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Tiegs, T. N., L. Leaskey, and R. O. Loutfy. Gas pressure sintering of silicon nitride. Office of Scientific and Technical Information (OSTI), December 1998. http://dx.doi.org/10.2172/555284.

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Sawyer, J., B. Buchan, R. Duiven, M. Berger, J. Cleveland, and J. Ferri. Cordierite silicon nitride filters. Final report. Office of Scientific and Technical Information (OSTI), February 1992. http://dx.doi.org/10.2172/10177615.

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Sundberg, G. J. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II. Office of Scientific and Technical Information (OSTI), January 1994. http://dx.doi.org/10.2172/814549.

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Chen, Wei, S. G. Malghan, S. C. Danforth, and A. Pechenik. Low-temperature fabrication of transparent silicon nitride. Office of Scientific and Technical Information (OSTI), May 1994. http://dx.doi.org/10.2172/10165598.

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Sundberg, G. J., A. M. Vartabedian, J. A. Wade, and C. S. White. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report. Office of Scientific and Technical Information (OSTI), October 1994. http://dx.doi.org/10.2172/28303.

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Yust, C. S. Reciprocating sliding wear of in-situ reinforced silicon nitride. Office of Scientific and Technical Information (OSTI), October 1995. http://dx.doi.org/10.2172/110749.

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