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Journal articles on the topic 'Silicon Nano-structured Thin Films'

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Author: Grafiati

Published: 7 September 2023

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1

Fu, Xiao-An, Sangsoo Noh, Li Chen, and Mehran Mehregany. "Very Thin Poly-SiC Films for Micro/Nano Devices." Journal of Nanoscience and Nanotechnology 8, no. 6 (June 1, 2008): 3063–67. http://dx.doi.org/10.1166/jnn.2008.18321.

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We report characterization of nitrogen-doped, very thin, low-stress polycrystalline silicon carbide (poly-SiC) films suitable for fabricating micro/nano devices. The poly-SiC films are deposited on 100 mm-diameter (100) silicon wafers in a large-scale, hot-wall, horizontal LPCVD furnace using SiH2Cl2 and C2H2 as precursors and NH3 as doping gas. The deposition temperature and pressure are fixed at 900 °C and 4 Torr, respectively. The deposition rate increases substantially in the first 50 minutes, transitioning to a limiting value thereafter. The deposited films exhibit (111)-orientated polycrystalline 3C-SiC texture. HR-TEM indicates a 1 nm to 4 nm amorphous SiC layer at the SiC/silicon interface. The residual stress and the resistivity of the films are found to be thickness dependent in the range of 100 nm to 1 μm. Films with thickness less than 100 nm suffer from voids or pinholes. Films thicker than 100 nm are shown to be suitable for fabricating micro/nano devices.

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2

Alet, Pierre-Jean, Serge Palacin, and Pere Roca i. Cabarrocas. "Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts." Thin Solid Films 517, no. 23 (October 2009): 6405–8. http://dx.doi.org/10.1016/j.tsf.2009.02.106.

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3

Das, Debajyoti. "Quantum confinement effects in nano-silicon thin films." Solid State Communications 108, no. 12 (November 1998): 983–87. http://dx.doi.org/10.1016/s0038-1098(98)00478-5.

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4

Yu, Gui Wen, Jing Dong, Ye Tian, Wen Xin Li, and Xue Gong. "Prepared and Surface Analyzed of Nano-Silicon Nitride Thin Films." Advanced Materials Research 233-235 (May 2011): 2015–18. http://dx.doi.org/10.4028/www.scientific.net/amr.233-235.2015.

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Thin silicon nitride films were prepared on PET by r.f. reactive sputtering. Deposition Rate, reactive mechanisms, the thickness attribution, chemical stoichiometry and impurity were studied by means of RBS, XPS, and ellipsometer. Results show that chemical stoichiometric films with N-to-Si atomic ratio of 4:3 were achieved even at room temperature. Depth profiles of XPS and SIMS reveal that oxide exists only at the interface between nitride and substrate and Ar atoms are buried in the films.

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5

Mehmet zkan, Mehmet zkan, and Sercen Sadik Erdem Sercen Sadik Erdem. "Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique." Journal of the chemical society of pakistan 43, no. 3 (2021): 253. http://dx.doi.org/10.52568/000581/jcsp/43.03.2021.

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In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

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6

Mehmet zkan, Mehmet zkan, and Sercen Sadik Erdem Sercen Sadik Erdem. "Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique." Journal of the chemical society of pakistan 43, no. 3 (2021): 253. http://dx.doi.org/10.52568/000581.

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In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

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7

Suresh, S., T. G. Nieh, and B. W. Choi. "Nano-indentation of copper thin films on silicon substrates." Scripta Materialia 41, no. 9 (October 1999): 951–57. http://dx.doi.org/10.1016/s1359-6462(99)00245-6.

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8

Acosta, E., N. M. Wight, V. Smirnov, J. Buckman, and N. S. Bennett. "Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics." Journal of Electronic Materials 47, no. 6 (November 30, 2017): 3077–84. http://dx.doi.org/10.1007/s11664-017-5977-8.

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9

Gracin, D., A. Gajović, K. Juraić, M. Čeh, Z. Remeš, A. Poruba, and M. Vaněček. "Spectral response of amorphous–nano-crystalline silicon thin films." Journal of Non-Crystalline Solids 354, no. 19-25 (May 2008): 2286–90. http://dx.doi.org/10.1016/j.jnoncrysol.2007.10.076.

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10

Zhao, Xiao Feng, Dian Zhong Wen, Yang Li, Yuan Xin Hou, Chun Peng Ai, Zhi Qiang Wang, and De Jun Xiu. "Structure Design, Fabrication and Characteristics of Polysilicon Nano-Thin Films Resistances Pressure Sensor Based on MEMS Technology." Key Engineering Materials 483 (June 2011): 200–205. http://dx.doi.org/10.4028/www.scientific.net/kem.483.200.

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A polysilicon nano-thin films pressure sensor was designed and fabricated on single crystal silicon substrate by MEMS technology in this paper, and the sensor is composed by Wheatstone bridge structure with four polysilicon nano-thin films resistances fabricated on squared silicon membrane. The experiment result shows that, under constant current power supply of 0.875mA , full scale output is 24.05 mV at room temperature, sensitivity is 0.15 mV/kPa, when the temperatures are from -20 to 80°C, the coefficient of zero temperature and sensitivity temperature is –960 ppm/°C and –820 ppm /°C respectively.

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11

HANABUSA, TAKAO, KAZUYA KUSAKA, SHOSO SHINGUBARA, and OSAMI SAKATA. "THERMAL STRESS BEHAVIOR IN NANO-SIZE THIN ALUMINUM FILMS." International Journal of Modern Physics B 20, no. 25n27 (October 30, 2006): 4691–96. http://dx.doi.org/10.1142/s0217979206041902.

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In-situ observation of thermal stresses in thin films deposited on a silicon substrate was made by synchrotron radiation. Specimens prepared in this experiment were nano-size thin aluminum films with SiO 2 passivation. The thickness of the films was 10 nm, 20 nm and 50 nm. Synchrotron radiation revealed the diffraction intensities for these thin films and make possible to measure stresses in nano-size thin films. Residual stresses in the as-deposited state were tensile. Compressive stresses were developed in a heating cycle up to 300°C and tensile stresses were developed in a cooling cycle. The thermal stresses in the 50 nm film showed linear behavior in the first heating stage from room temperature to 250°C followed by no change in the stress at 300°C, however, linearly behaved in the second cycle. On the other hand, the thermal stresses in 20 nm and 10 nm films almost linearly behaved without any hysteresis in increasing and decreasing temperature cycles. The mechanism of thermal stress behavior in thin films can be explained by strengthening of the nano-size thin films due to inhibition of dislocation source and dislocation motion.

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12

Shi, Chang Zhi, Xiao Wei Liu, Xuan Wu, and Hai Tao Zheng. "Piezoresistive Sensitivity and Al Ohmic Contact of Highly Doped Polycrystalline Silicon Nano Thin Films." Key Engineering Materials 483 (June 2011): 789–93. http://dx.doi.org/10.4028/www.scientific.net/kem.483.789.

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The piezoresistive and ohmic contact properties of polycrystalline silicon nano thin films were investigated in this paper. The polycrystalline silicon films with different thicknesses and doping concentrations were deposited by LPCVD and doped with boron highly, and then the cantilever beam samples were fabricated by photolithography and wet etching. By measuring the gauge factor and specific contact resistivity, the specific contact resistivity of Al contacts can reach 2.4×10-3Ω·cm2 after the alloying at 450 °C for 20 min; the enhanced piezoresistive effect of highly doped polycrystalline silicon nano thin films was discovered. The conclusions indicated that the enhanced piezoresistive sensitivity of PNTFs is due to the modification of depletion region barrier by ultra high doping and film thickness thinning and the enhancement of tunneling piezoresistive effect. The distinct piezoresistive phenomenon of PNTFs could be utilized for the development and fabrication of miniature piezoresistive sensors.

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13

LAMBA, V. K., O. P. GARG, and D. ENGLES. "SCATTERING IN NANO-FILMS." Journal of Multiscale Modelling 04, no. 02 (June 2012): 1250007. http://dx.doi.org/10.1142/s1756973712500072.

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In this communication, a quantum mechanical technique for treatment of effects of scattering transport at nanoscale in thin films is discussed. We implemented a rigorous treatment of scattering within the NEGF simulation platform. Results obtained by applying the rigorous scattering model to simulate the devices were used as a benchmark to validate a simple computationally-efficient, phenomenological treatment of scattering. The NEGF method is used to study the effect of electron confinement on silicon nano-films and wires. Electron confinement results in almost a factor of 3 decreases in the electrical conductivity of the 5 nm silicon film compared to the 10 nm film. Increase in the amount of confinement also leads to a 35% decrease in the conductivity of a 5 nm × 5 nm wire compared to the 5 nm film. Our simple model provides an excellent tradeoff between increased computational cost and the physics of scattering that needs to be captured in devices of the future.

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14

Najafov, BA, FP Abasov, and RS Ibragimov. "Obtaining Thin Films of Silicon-Carbon Method of Reactive Magnetron Sputtering are used as Solar Cells." Journal of Nanosciences Research & Reports 3, no. 2 (June 30, 2021): 1–7. http://dx.doi.org/10.47363/jnsrr/2021(3)121.

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In the work of the various parameters studied film amorphous and nano-crystalline alloy silicon-carbon (а-nc-Si1-xCx :H (x=0÷1)) doped with phosphorus (PH3 ) and boron (B2 H6 ). Studied the properties of these films on different substrates derived from quartz, glass and Silicon-coated Fe, Al, Pd, Ni, Ti, Ag. Using transmission electron microscopy (TEM) studied the morphology obtained nano tubes. Also examine the structural properties of films by using infrared spectroscopy and x-ray diffraction of x-rays. Created by cascade solar cells area S = 1.2 cm2 and have a coefficient of 11.2%.

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15

Cao, Chuanbao, Jiyu Fu, and Hesun Zhu. "CARBON NITRIDE THIN FILMS DEPOSITED BY CATHODIC ELECTRODEPOSITION." International Journal of Modern Physics B 16, no. 06n07 (March 20, 2002): 1138–42. http://dx.doi.org/10.1142/s0217979202011007.

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Carbon nitride thin films were prepared by cathodic electrodeposition. The dicyandiamide compound dissovled in acetone was selected as the organic precursor. Single crystal silicon wafers and conductive glass (ITO) wafers were used as substrates. XPS measurements indicated that the films composed of carbon and nitrogen elements. The nitrogen content reached 41%. The polycrystalline β-C3N4 should exit in the prepared film from TED measurements. The nano hardness of the films on ITO substrates were as high as 13 GPa. The structure and properties were studies.

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16

Zamil Abdulzahra, Narjis. "EXTRAORDINARY MAGNETORESISTANCE OF LASERANNEALED NANO BORON DEPOSITEDON OXIDIZED POROUS SILICON." Eurasian Physical Technical Journal 20, no. 2 (44) (June 21, 2023): 20–31. http://dx.doi.org/10.31489/2023no2/20-31.

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This study explores the impact of laser annealing on the electrical and magnetic properties of nano boron deposited on oxidized porous silicon (n-B/PSiO2) and its potential for spintronic applications. The Nd: YAG laser was used at varying energies to anneal the n-B thin films. Increasing the laser energy increased grain size and more ordered grain structures. It also increased surface roughness due to forming new grain boundaries and secondary phases. The electrical properties of the material were also affected by the laser annealing, with an increase in forward and reverse current and an increase in electrical resistivity with increased annealing temperature. The study also found that the magnetoresistance of the material increased with increasing laser temperature, attributed to tunnel injection through the thin silicon dioxide layer, and could be up to 7 times higher than non-annealed n-B/PSiO2in a magnetic field. The study highlights the importance of controlling materials’ grain size and structure for their physical and electrical properties. In addition, it provides insights into the electronic properties of n-B/PSiO2and the behavior of charge carriers in a magnetic field.

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17

Toliopoulos, Dimosthenis, Alexey Fedorov, Sergio Bietti, Monica Bollani, Emiliano Bonera, Andrea Ballabio, Giovanni Isella, et al. "Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates." Nanomaterials 10, no. 12 (December 17, 2020): 2542. http://dx.doi.org/10.3390/nano10122542.

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We report on the dewetting process, in a high vacuum environment, of amorphous Ge thin films on SiO2/Si (001). A detailed insight of the dewetting is obtained by in situ reflection high-energy electron diffraction and ex situ scanning electron microscopy. These characterizations show that the amorphous Ge films dewet into Ge crystalline nano-islands with dynamics dominated by crystallization of the amorphous material into crystalline nano-seeds and material transport at Ge islands. Surface energy minimization determines the dewetting process of crystalline Ge and controls the final stages of the process. At very high temperatures, coarsening of the island size distribution is observed.

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18

Rojwal, Vineet, Monoj Kumar Singha, T. K. Mondal, and Debojyoti Mondal. "Formation of micro structured doped and undoped hydrogenated silicon thin films." Superlattices and Microstructures 124 (December 2018): 201–17. http://dx.doi.org/10.1016/j.spmi.2018.09.022.

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19

Khaleeq-ur-Rahman, M., K. A. Bhatti, M. S. Rafique, S. Anjum, A. Latif, M. Anjum, A. Ahsan, and H. Ozair. "Morphological and structural analysis of nano-structured gold thin film on silicon by pulsed laser deposition technique." Vacuum 85, no. 3 (September 2010): 353–57. http://dx.doi.org/10.1016/j.vacuum.2010.05.002.

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20

Kulkarni, Anand, Durdu Guney, and Ankit Vora. "Optical Absorption in Nano-Structures: Classical and Quantum Models." ISRN Nanomaterials 2013 (December 29, 2013): 1–7. http://dx.doi.org/10.1155/2013/504341.

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In the last decade, nano-structured materials have gained a significant interest for applications in solar cells and other optical and opto-electronic devices. Due to carrier confinement, the absorption characteristics in these structures are quite different from the absorption in bulk materials and thin films. Optical absorption coefficients of a silicon nano-wire are obtained based on a semi-classical model where the photon-electron interaction is described by the interaction of an electromagnetic wave with the electrons in the valence band of a semiconductor. The absorption characteristics showed enhanced optical absorption but no resonant peaks. In our modified model, we have identified optically active inter band transitions by performing electronic structure calculations on unit cells of nano-dimensions. The absorption spectrum obtained here shows explicit excitonic processes. This absorption is tunable from the visible region to near UV portion of the solar spectrum. In our previous work on thin films (100 nm) of ITO, we have used classical Drude model to describe free electron absorption. Using the imaginary part of the calculated complex dielectric function, we have plotted the absorption coefficient versus wavelength of the photon and compared with the experimental data showing good agreement between theory and experiment.

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21

Yan, Zhao, Yu Han, and Kei May Lau. "InAs nano-ridges and thin films grown on (001) silicon substrates." Journal of Applied Physics 128, no. 3 (July 21, 2020): 035302. http://dx.doi.org/10.1063/5.0011808.

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22

Marins, E., V. Guduru, M. Ribeiro, F. Cerqueira, A. Bouattour, and P. Alpuim. "High-rate deposition of nano-crystalline silicon thin films on plastics." physica status solidi (c) 8, no. 3 (January 13, 2011): 846–49. http://dx.doi.org/10.1002/pssc.201000288.

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23

Bhaskar, Umesh, Vikram Passi, Azeem Zulfiqar, Ulf Södervall, Bengt Nilsson, Goran Petersson, Mats Hagberg, Thomas Pardoen, and Jean Pierre Raskin. "On-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams." Advanced Materials Research 276 (July 2011): 117–26. http://dx.doi.org/10.4028/www.scientific.net/amr.276.117.

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A simple and versatile on-chip tensile testing method is proposed for the statistical evaluation of size effects on the mechanical strength of silicon thin films along with the simultaneous study of (from low to ultra) strain effects on the carrier transport. Mechanical results are presented on the fracture strength of micro-nano scale silicon beams, followed with a discussion on interface states and problems facing reliable nano-electronic and nano-electromechanical characterizations.

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24

Ramana, K. Venkata, M. Chandra Shekar, and V. Madhusudhana Reddy. "Characterization of Blended Polymer Electrolyte Thin Films Based on PVDF + PEG Doped with Nano SiO2." Oriental Journal Of Chemistry 38, no. 4 (August 31, 2022): 924–28. http://dx.doi.org/10.13005/ojc/380412.

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Solution Casting Technique (SCT) is used to prepare the films of poly vinylidene difluoride (PVDF) + poly ethylene glycol (PEG) + nano silicon dioxide (SiO2.). Modifications in structure, thermal stability and energy band gap values of all prepared thin films have been studied using XRD, SEM, DSC and UV-Vis. The disappearance of a small dip at higher concentrations of DSC plots of nano SiO2 in PVDF+PEG indicates that the decrease in the crystallinity which also supported by XRD results. From the SEM results it is observed that, at 10 wt.% of nano SiO2 of concentration amorphous nature is more which leads increase in thermal stability of the material. FTIR results show strong growth in the CF2 stretching with increasing concentratration of nano SiO2 in PVDF+PEG and also the intensity of the aliphatic C-H scattering vibrational bands are observed in spectra of PVDF+PEG and PVDF+PEG+nano SiO2. The direct band gap values of PVDF+PEG+nano SiO2 polymer electrolyte indicates the influence of nano SiO2 on PVDF+PEG for better conducting properties.

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25

FU, GUANG-SHENG, YAN-BIN YANG, WEI YU, WAN-BING LU, WEN-GE DING, and LI HAN. "AMORPHOUS SILICON NANO-PARTICLES IN A-SiNx:H PREPARED BY HELICON WAVE PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION." International Journal of Modern Physics B 19, no. 15n17 (July 10, 2005): 2704–9. http://dx.doi.org/10.1142/s0217979205031560.

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Amorphous silicon nano-particles embedded in hydrogenated amorphous silicon nitride ( a - SiN x: H ) matrix have been prepared using an approach based on the deposition of Si -rich a - SiN x: H thin films by helicon wave plasma-enhanced chemical vapour deposition (HWP-CVD) technique, which has a characteristic of high plasma density at low working pressure. X-ray photoelectron spectroscopy analysis shows that the silicon atom bonds exist in the Si-Si and Si-N configurations and the amorphous silicon regions appear separately in the Si -rich a - SiN x: H films. The existence of amorphous silicon nano-particles without any post annealing in the a - SiN x: H random matrix is confirmed by the image of high-resolution transmission electron microscopy. Through infrared absorption analysis, the formation of the separated amorphous silicon nano-particles structure is closely correlated with the deposition parameters such as low working pressure and Ar dilution in the HWP-CVD process.

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26

Roumie, Mohamad, Sayed Abboudy, Maryam Al Sabbagh, Husam Abu-Safe, Maher Soueidan, and Bilal Nsouli. "RBS Study of Multilayer Structure Material of Si/SiO₂ Nano Films." Advanced Materials Research 324 (August 2011): 310–13. http://dx.doi.org/10.4028/www.scientific.net/amr.324.310.

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An absorber-emitter system was fabricated using a multi-layer structure of amorphous silicon and silicon oxide thin films. The layers were deposited using RF magnetron sputtering system. The thin films were alternated in a periodic structure to form a one-dimensional photonic crystal. Each period in the crystal consisted of one layer of 57 nm thick silicon and a 100 nm thick silicon oxide layer. Several samples were prepared consisted on different periods (N= 1, 2, 3, 4, 5 and 10). Rutherford Backscattering Spectrometry technique (RBS) was used to verify the number of layers and their alternation, checking the thicknesses and determine the real stoichiometry in each layer of Si and SiOx.

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27

Das, Debajyoti, and Debjit Kar. "Investigation of the vertical electrical transport in a-Si:H/nc-Si:H superlattice thin films." Physical Chemistry Chemical Physics 17, no. 26 (2015): 17063–68. http://dx.doi.org/10.1039/c5cp02018b.

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Studies on the vertical electrical transport of size-controlled silicon nano-crystallites (Si-ncs) obtained simply by controlling the thickness of the nc-Si:H sub-layer (t_nc) in the a-Si:H/nc-Si:H superlattice thin films grown by low temperature plasma processing in PE-CVD.

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28

Zhuang, Cui Cui, Xiao Feng Zhao, Yu Song, Dian Zhong Wen, Jian Dong Jin, and Yang Yu. "Characteristics Research of Hall Magnetic Sensor Based on Nano-Polysilicon Thin Film Transistors." Key Engineering Materials 609-610 (April 2014): 1082–87. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.1082.

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In this paper, we presented Hall magnetic sensors based on nano-polysilcon thin film transistors(TFTs). These sensors are fabricated on the <100> orientation high resistivity silicon substratesby using complementary metal oxide semiconductor (CMOS) technology and adopting thenano-polysilicon thin films with thickness of 82 nm as the channel layers of TFTs. The influence ofthe channel layer doping type and channel length-width radio of TFT on sensor's sensitivity was investigated.When the supply voltage is 5.0 V, the maximum measured sensitivity of p-type channel andn-type channel sensors are about 8.5 mV/T and 25.6 mV/T, respectively. These experimental resultsmean that nano-polysilicon thin films present an application on Hall magnetic sensors.

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29

Ji, Jia Ming, Xiao Jing Xu, Dan Chen, Xi Ling Xin, Kun Tian, and Xin Lan Sheng. "Improvement of Tribological Behaviour of Biomedical Nanocrystalline Titanium by Magnetron Sputtered CNx/SiC Double Layer Films." Advanced Materials Research 284-286 (July 2011): 825–28. http://dx.doi.org/10.4028/www.scientific.net/amr.284-286.825.

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The nano-indentation response and the friction and wear properties of the CNx/SiC (carbon nitride /silicon carbon) double layer thin films (SiC films as interlayer) deposited on nanocrystalline titanium substrate using magnetron sputtering technique at room temperature were investigated. The results show that the CNx films exhibited a low nano-hardness of 8.0 GPa and Young's modulus of 55.0 GPa but a high hardness-to-modulus ratio of 0.146. As sliding against Si3N4 (silicon nitride) ball under Kokubo simulation body fluid (SBF) at room temperature, the CNx films exhibited the superior tribological properties with the friction coefficients of about 0.1 and the special wear rate of about 1.6×10−6 mm3/Nm.

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30

SHIM, J. H., K. H. HAN, M. B. PARK, and N. H. CHO. "EFFECT OF REACTION GAS ON THE STRUCTURAL AND OPTICAL FEATURES OF NC-SI:H THIN FILMS PREPARED BY PECVD." International Journal of Modern Physics B 16, no. 28n29 (November 20, 2002): 4335–38. http://dx.doi.org/10.1142/s0217979202015388.

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Hydrogenated nano-crystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD). The variation in the crystallinity, nano-structure and optical characteristics of the nc-Si:H films with deposition variables such as reaction gas, post-deposition heat-treatment and deposition time were investigated; the relationship between the optical nano-structural features of the nc-Si:H films was discussed. The intensity of the PL peak, observed at about ~ 480 nm region, increased with the amount of reaction gas as well as deposition time. On the other hand, PL peaks appear at ~ 580 nm region when the sample was annealed in vacuum, and the intensity of the peaks increased with increasing the annealing time. It's believed that radiative recombination occurred due to the defects of SiO x in the film.

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31

Perevedentseva, E., F. K. Tung, P. H. Chung, P. W. Chou, and C. L. Cheng. "Surface nano-structured silicon carbide thin film produced using hot filament decomposition of ethylene at low temperature on silicon wafer." Thin Solid Films 515, no. 13 (May 2007): 5259–63. http://dx.doi.org/10.1016/j.tsf.2006.12.178.

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32

Yin, Chen Yue, Li Na Xu, and Ning Gu. "Tunable Nanostructures and Sers Activities of Sputtered Thin Silver Films." Applied Mechanics and Materials 598 (July 2014): 78–81. http://dx.doi.org/10.4028/www.scientific.net/amm.598.78.

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A series of silver films were fabricated on silicon by magnetron sputtering method, which enables us to finely tune silver nanostructures by adjusting sputtering process. We studied the evolutional nanostructures obtained from sputtering time, and investigated their corresponding SERS effects. Results show that nanogroove-structured thin silver films have strongest Raman signal enhancement. This work provides a very fast, simple and reproducible way to fabrication of SERS-active substrate with tunable nanostructures.

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33

Hashim, Shaiful Bakhtiar, Norhidayatul Hikmee Mahzan, Sukreen Hana Herman, and Mohamad Rusop Mahmood. "Room-Temperature Deposition of Silicon Thin Films by RF Magnetron Sputtering." Advanced Materials Research 576 (October 2012): 543–47. http://dx.doi.org/10.4028/www.scientific.net/amr.576.543.

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Silicon thin film was successfully deposited on glass substrate using Radio frequency (RF) magnetron sputtering. The effect of deposition pressure on the physical and structural properties of thin films on the glass substrate was studied. The film thickness and deposition rate decreased with decreasing deposition pressure. Field emission scanning electron microscopy (FESEM) shows as the deposition pressure increased, the surface morphology transform from concise structured to not closely pack on the surface. Raman spectroscopy result showed that the peak was around 508 cm-1, showing that the thin film is nanocrystalline instead of polycrystalline silicon.

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34

Zhuang, Aoyun, Chao Li, Jianping Yu, and Yao Lu. "The Glaze Icing Performance of a Robust Superhydrophobic Film Composed of Epoxy Resin and Polydimethylsiloxane." Coatings 13, no. 7 (July 20, 2023): 1271. http://dx.doi.org/10.3390/coatings13071271.

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Ice accretion on transmission lines can cause operational difficulties and disastrous events. In this study, a micro/nano-structured epoxy resin/polydimethylsiloxane (EP/PDMS) film on glass, with water droplet contact angles (CA) observed as high as 160° and the water droplet sliding angle (SA) < 1° was fabricated by aerosol-assisted chemical vapor deposition (AACVD). The glaze icing performance of the superhydrophobic EP/PDMS films have been investigated by comparing the bare glass and room temperature vulcanized (RTV) silicon rubber-coated glass substrate representing the glass insulators and silicone rubber insulators, respectively. Compared with the bare glass and the RTV silicon rubber coating, the EP/PDMS superhydrophobic coating showed excellent performance in delaying glaze icing, especially in the early stages of icing. After 20 min of glaze icing with tilting angle of 90° at −5 and −10 °C, 38.9% and 85.7% of the RTV silicon rubber coating were covered, respectively, and less than 3% of the EP/PDMS coating was covered by ice when the blank glass sheet was completely covered. The EP/PDMS films also showed good mechanical robustness and long-term stability, which are important considerations in their widespread real-world adoption.

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Nasir, Syafiqa, Fuei Pien Chee, Bablu Kumar Ghosh, Muhammad Izzuddin Rumaling, Rosfayanti Rasmidi, Mivolil Duinong, and Floressy Juhim. "Composition Dependence Structural and Optical Properties of Silicon Germanium (SiχGe1−χ) Thin Films." Crystals 13, no. 5 (May 9, 2023): 791. http://dx.doi.org/10.3390/cryst13050791.

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This study investigates the structural and optical characteristics of Silicon Germanium (SiGe) thin films with varying compositions and annealing temperatures for potential use in electronic and optoelectronic devices. Si0.8Ge0.2 and Si0.9Ge0.1 films were deposited onto a high-temperature quartz substrate and annealed at 600 °C, 700 °C, and 800 °C before being evaluated using an X-Ray Diffractometer (XRD), Atomic Force Microscopy (AFM), and a UV-Vis Spectrometer for structural and optical properties. The results show that increasing the annealing temperature results in an increase in crystalline size for both compositions. The transmittance for Si0.8Ge0.2 decreases slightly with increasing temperature, while Si0.9Ge0.1 remains constant. The optical band gap for Si0.9Ge0.1 thin film is 5.43 eV at 800 °C, while Si0.8Ge0.2 thin film is 5.6 eV at the same annealing temperature. XRD data and surface analysis reveal significant differences between the band edges of SiGe nano-structure materials and bulk crystals. However, the possibility of a SiGe nano-crystal large band gap requires further investigation based on our study and related research works.

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Takao, Hanabusa, Kazuya Kusaka, Shozo Shingubara, and Osamu Sakata. "In Situ Observation of Thermal Stress in Nano-Size Thin Aluminum Films." Materials Science Forum 490-491 (July 2005): 577–82. http://dx.doi.org/10.4028/www.scientific.net/msf.490-491.577.

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In-situ observation of thermal stress in thin films deposited on a silicon substrate was made by synchrotron radiations. The specimens prepared in this experiment were nano-size thin aluminum films with SiO2 passivation. The thickness of the films was 10 nm, 20 nm and 50 nm. Residual stress in the as-deposited state was tensile. Compressive stress was developed in the heating cycle up to 300 oC and tensile stresses developed in the cooling cycle. The thermal stresses in the 50 nm film showed non-linear behavior in the first heating cycle from the room temperature to 300 oC. However, they linearly behaved in the first cooling cycle and the second thermal cycle. On the other hand, the thermal stresses in the 10 nm film behaved almost linearly without any hysteresis in the first and the second thermal cycles. The mechanism of thermal stress behavior of thin films is discussed.

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37

Kim, Jae Myung, Su Yong Lee, Hyon Chol Kang, and Do Young Noh. "Direct nano-scale patterning of Ag films using hard X-ray induced oxidation." Journal of Synchrotron Radiation 22, no. 1 (January 1, 2015): 156–60. http://dx.doi.org/10.1107/s1600577514023534.

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The morphological change of silver nano-particles (AgNPs) exposed to an intense synchrotron X-ray beam was investigated for the purpose of direct nano-scale patterning of metal thin films. AgNPs irradiated by hard X-rays in oxygen ambient were oxidized and migrated out of the illuminated region. The observed X-ray induced oxidation was utilized to fabricate nano-scale metal line patterns using sectioned WSi2/Si multilayers as masks. Lines with a width as small as 21 nm were successfully fabricated on Ag films on silicon nitride. Au/Ag nano-lines were also fabricated using the proposed method.

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Koochekzadeh, Ali, Eskandar Keshavarz Alamdari, Abod Al Ghafar Barzegar, and Ali A. Salardini. "Thermal Effects of Platinum Bottom Electrodes on PZT Sputtered Thin Films Used in MEMS Devices." Key Engineering Materials 437 (May 2010): 598–602. http://dx.doi.org/10.4028/www.scientific.net/kem.437.598.

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For an optimum performance of MEMS devices such as microactuators and microsensors based on piezoelectric thin films a Si/Ti/Pt bottom electrode is widely used. This study shows temperature dependence of surface morphology of both platinum bottom electrode and piezoelectric lead titanate zirconate (PZT) thin films. Ti (10 nm) and Pt (100 nm) thin films were deposited on silicon substrate by thermal evaporation and electron beam, respectively, without vacuum breaking. After annealing treatment, the Pt film exhibited (111) preferred orientation. Finally a 0.8 micron thick PZT (54/46) films were deposited by r.f. magnetron sputtering at room temperature in pure Ar followed by a conventional post annealing treatment on silicon substrate. The XRD measurements have shown the perovskite structure of PZT films with (100) preferred orientation growth. The roughness of platinum film measured by AFM test showed the continuous smoothness of platinum surface for different annealing temperatures. The SEM test results demonstrated that irrespective of the annealing temperature increases, recrystallization of platinum and nano-size holes on Pt surface occurred. The latter caused the acceleration of out-diffusion titanium atoms through Pt layer and reach to the other side of surface. The surface state of Pt thin film is very important as it could strongly influence the PZT surface morphology so the existence of bubbles and depression on PZT surface are increased with both recrystallization of Pt grains and nano-size holes on Pt film surface when the annealing temperature increased.

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39

Gracin, D., K. Juraić, J. Sancho-Parramon, P. Dubček, S. Bernstorff, and M. Čeh. "Amorphous-Nano-Crystalline Silicon Thin Films in Next Generation of Solar Cells." Physics Procedia 32 (2012): 470–76. http://dx.doi.org/10.1016/j.phpro.2012.03.587.

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40

Bae, K. E., K. W. Chae, J. K. Park, W. S. Lee, and Y. J. Baik. "Oxidation behavior of amorphous boron carbide–silicon carbide nano-multilayer thin films." Surface and Coatings Technology 276 (August 2015): 55–58. http://dx.doi.org/10.1016/j.surfcoat.2015.06.053.

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Raypah, Muna E., and Naser M. Ahmed. "Characterization of porous silicon thin films passivated by a nano-silver layer." Materials Science in Semiconductor Processing 31 (March 2015): 235–39. http://dx.doi.org/10.1016/j.mssp.2014.11.050.

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Beake, B. D., V. M. Vishnyakov, and A. J. Harris. "Nano-scratch testing of (Ti,Fe)N x thin films on silicon." Surface and Coatings Technology 309 (January 2017): 671–79. http://dx.doi.org/10.1016/j.surfcoat.2016.11.024.

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43

Georgiev, D. G., R. J. Baird, I. Avrutsky, G. Auner, and G. Newaz. "Controllable excimer-laser fabrication of conical nano-tips on silicon thin films." Applied Physics Letters 84, no. 24 (June 14, 2004): 4881–83. http://dx.doi.org/10.1063/1.1762978.

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44

Kim, Min Su, Kwang Gug Yim, Soaram Kim, Giwoong Nam, and Jae-Young Leem. "White light emission from nano-fibrous ZnO thin films/porous silicon nanocomposite." Journal of Sol-Gel Science and Technology 59, no. 2 (June 14, 2011): 364–70. http://dx.doi.org/10.1007/s10971-011-2513-9.

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45

Ishak, A., K. Dayana, and Mohamad Rusop. "Surface Morphology and Compositional Analysis of Undoped Amorphous Carbon Thin Films via Bias Assisted Pyrolysis-CVD." Advanced Materials Research 667 (March 2013): 468–76. http://dx.doi.org/10.4028/www.scientific.net/amr.667.468.

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Amorphous carbon (a:C) were successfully deposited on the silicon surfaces via bias assisted pyrolysis-CVD in the range between 350oC to 500oC with constant of negative bias -50V in 1 hour deposition. The heated of palm oil at about 150oC was vaporized then used for deposited onto p-type silicon substrates. The deposited thin films were characterized by using field emission scanning electron microscopic (FESEM), energy dispersive analyser x-ray (EDAX). We have found carbon element at about 0.15 keV from EDAX with surface morphology formed a nano-ball like structure at 450oC of palm oil precursor. These results indicated deformation of physical and structural thin films caused by applied negative bias and the temperature.

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46

Luo, Jinsong, Ligong Zhang, Haigui Yang, Nan Zhang, Yongfu Zhu, Xingyuan Liu, and Qing Jiang. "Oxidation kinetics of nanocrystalline Al thin films." Anti-Corrosion Methods and Materials 66, no. 5 (September 2, 2019): 638–43. http://dx.doi.org/10.1108/acmm-11-2018-2037.

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Purpose This paper aims to study the oxidation kinetics of the nanocrystalline Al ultrathin films. The influence of structure and composition evolution during thermal oxidation will be observed. The reason for the change in the oxidation activation energy on increasing the oxidation temperature will be discussed. Design/methodology/approach Al thin films are deposited on the silicon wafers as substrates by vacuumed thermal evaporation under the base pressure of 2 × 10−4 Pa, where the substrates are not heated. A crystalline quartz sensor is used to monitor the film thickness. The film thickness varies in the range from 30 to 100 nm. To keep the silicon substrate from oxidation during thermal oxidation of the Al film, a 50-nm gold film was deposited on the back side of silicon substrate. Isothermal oxidation studies of the Al film were carried out in air to assess the oxidation kinetics at 400-600°C. Findings The activation energy is positive and low for the low temperature oxidation, but it becomes apparently negative at higher temperatures. The oxide grains are nano-sized, and γ-Al2O3 crystals are formed at above 500°C. In light of the model by Davies, the grain boundary diffusion is believed to be the reason for the logarithmic oxidation rate rule. The negative activation energy at higher temperatures is apparent, which comes from the decline of diffusion paths due to the formation of the γ-Al2O3 crystals. Originality/value It is found that the oxidation kinetics of nanocrystalline Al thin films in air at 400-600°C follows the logarithmic law, and this logarithmic oxidation rate law is related to the grain boundary diffusion. The negative activation energies in the higher temperature range can be attributed to the formation of γ-Al2O3 crystal.

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47

Hegedüs, Nikolett, Katalin Balázsi, and Csaba Balázsi. "Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications." Materials 14, no. 19 (September 28, 2021): 5658. http://dx.doi.org/10.3390/ma14195658.

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Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx:H) thin films enjoy widespread scientific interest across multiple application fields. Exceptional combination of optical, mechanical, and thermal properties allows for their utilization in several industries, from solar and semiconductor to coated glass production. The wide bandgap (~5.2 eV) of thin films allows for its optoelectronic application, while the SiNx layers could act as passivation antireflective layers or as a host matrix for silicon nano-inclusions (Si-ni) for solar cell devices. In addition, high water-impermeability of SiNx makes it a potential candidate for barrier layers of organic light emission diodes (OLEDs). This work presents a review of the state-of-the-art process techniques and applications of SiNx and SiNx:H thin films. We focus on the trends and latest achievements of various deposition processes of recent years. Historically, different kinds of chemical vapor deposition (CVD), such as plasma enhanced (PE-CVD) or hot wire (HW-CVD), as well as electron cyclotron resonance (ECR), are the most common deposition methods, while physical vapor deposition (PVD), which is primarily sputtering, is also widely used. Besides these fabrication methods, atomic layer deposition (ALD) is an emerging technology due to the fact that it is able to control the deposition at the atomic level and provide extremely thin SiNx layers. The application of these three deposition methods is compared, while special attention is paid to the effect of the fabrication method on the properties of SiNx thin films, particularly the optical, mechanical, and thermal properties.

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Petrovic, Suzana, Borivoje Adnadjevic, Davor Perusko, Nada Popovic, Nenad Bundaleski, Milan Radovic, Biljana Gakovic, and Zlatko Rakocevic. "Structure and morphology of nano-sized W-Ti/Si thin films." Journal of the Serbian Chemical Society 71, no. 8-9 (2006): 969–76. http://dx.doi.org/10.2298/jsc0609969p.

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Thin films were deposited by d.c. sputtering onto a silicon substrate. The influence of the W-Ti thin film thickness to its structural and morphological characteristics of a nano-scale were studied. The phase composition and grain size were studied by X-ray diffraction (XRD), while the surface morphology and surface roughness were determined by scanning tunneling microscopy (STM). The analysis of the phase composition show that the thin films had a polycrystalline structure - they were composed of a b.c.c. W phase with the presence of a h.c.p. Ti phase. The XRD peak in the scattering angle interval of 38?-43? was interpreted as an overlap of peaks corresponding to the W(110) and Ti(101) planes. The grain size and the mean surface roughness both increase with the thikness of the thin film. The chemical composition of the thin film surface was also analyzed by low energy ions scattering (LEIS). The results show the surface segregation of titanium, as well as a substantial presence of oxygen an the surface.

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Jędrusik, Mateusz, Christian Turquat, Łukasz Cieniek, Agnieszka Kopia, and Christine Leroux. "Nanostructured LaFeO₃/Si thin films grown by pulsed laser deposition." European Physical Journal Applied Physics 96, no. 3 (December 2021): 30301. http://dx.doi.org/10.1051/epjap/2021210195.

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The orthorhombic LaFeO3 thin films grown by pulsed laser deposition on silicon showed nano-structuration of their surface and preferential crystallographic exposed facets, depending on the deposition temperature. The LaFeO3 film deposited at 850 °C has two types of grain termination, flat or tip-like, corresponding to two different growth directions, respectively [110] and [200]. However, due to the shape of the termination, the two types of grains expose the same {110} facets. The prepared lanthanum iron oxide films are iron deficient and consequently contains oxygen vacancies, the exact chemical formula being LaFe0.82O3-δ.

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50

Salim, Faiza M. "Technological Characteristics of Vanadyl Sulfate – Porous Silicon Heterojunction." NeuroQuantology 20, no. 1 (February 4, 2022): 56–61. http://dx.doi.org/10.14704/nq.2022.20.1.nq22008.

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Near nano limit of [vanadium sulfate hydrate / porous silicon] heterojunction using zinc sulfide as a window for solar cell applications were investigated. Nanoparticles of vanadium sulfate hydrate were prepared by the electrochemical method followed by deposited in the form of thin films on bases of conductive glass and porous silicon to study the structural properties. The transmittance, absorbance and energy gap for the active material and the nanolayer window were performed. Grain size and roughness rate were determined via the surface topography test. The electrical parameters were measured, including the electrical conductivity. Nano crystalline porous silicon (PSi) films from p-type silicon (p - Si) wafer are synthesized using electrochemical etching (ECE) process of p-silicon wafer. Effective reflectance was obtained by (ZnS/VOSO₄.H₂O/PSi/p-Si) thin film that display excellent light-trapping at wavelengths ranging from (200 – 900) nm. The energy band gap of (VOSO4.H2O) NPs was calculated and found (4.2 - 5) eV. The average grain size ranged (67.7 – 82.9) nm. The electrical measurements current – voltage (I-V) were examined in dark and illumination conditions, for the heterojunctions fabricated. The efficiency of solar cell was reached (12.96%) while the power conversion efficiency was reached (51.8%).

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