Journal articles: 'Silicon microphotonics'

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Kimerling, Lionel C. "Silicon microphotonics." Applied Surface Science 159-160 (June 2000): 8–13. http://dx.doi.org/10.1016/s0169-4332(00)00126-4.

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de Dood, M. J. A., A. Polman, T. Zijlstra, and E. W. J. M. van der Drift. "Amorphous silicon waveguides for microphotonics." Journal of Applied Physics 92, no. 2 (July 15, 2002): 649–53. http://dx.doi.org/10.1063/1.1486055.

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Fitzgerald, E. A., and L. C. Kimerling. "Silicon-Based Microphotonics and Integrated Optoelectronics." MRS Bulletin 23, no. 4 (April 1998): 39–47. http://dx.doi.org/10.1557/s0883769400030256.

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The need for integrated optical interconnects in electronic systems is derivedfrom the cost and performance of electronic systems. If we examine the cost of all interconnects, it becomes apparent that there is an exponential growth in cost per interconnect with the length of the interconnect. A remarkable feature of interconnect cost is that the exponential relation holds over all length scales—from the shortest interconnects on a chip to the longest interconnects in global telecommunications networks. Longer interconnects are drastically more expensive, and these costs are ultimately related to the labor cost associated with each interconnect. Given this economic pressure, it is not surprising that there is a driving force to condense more functions locally on the same chip, board, or system. In condensing these functions, the number of long interconnects are decreased and the overall cost of the electronic system decreases dramatically. A specific glaring example of this driving force is Si complementary-metal-oxide-semiconductor (CMOS) technology, especially the case of microprocessors. In the Si microprocessor case, the flood gates to interconnect condensation were opened and the miraculous trend of lower cost for exponentially increasing performance was revealed.

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Ferrara, Maria Antonietta, and Luigi Sirleto. "Integrated Raman Laser: A Review of the Last Two Decades." Micromachines 11, no. 3 (March 23, 2020): 330. http://dx.doi.org/10.3390/mi11030330.

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Important accomplishments concerning an integrated laser source based on stimulated Raman scattering (SRS) have been achieved in the last two decades in the fields of photonics, microphotonics and nanophotonics. In 2005, the first integrated silicon laser based upon SRS was realized in the nonlinear waveguide. This breakthrough promoted an intense research activity addressed to the realization of integrated Raman sources in photonics microstructures, like microcavities and photonics crystals. In 2012, a giant Raman gain in silicon nanocrystals was measured for the first time. Starting from this impressive result, some promising devices have recently been realized combining nanocrystals and microphotonics structures. Of course, the development of integrated Raman sources has been influenced by the trend of photonics towards the nano-world, which started from the nonlinear waveguide, going through microphotonics structures, and finally coming to nanophotonics. Therefore, in this review, the challenges, achievements and perspectives of an integrated laser source based on SRS in the last two decades are reviewed, side by side with the trend towards nanophotonics. The reported results point out promising perspectives for integrated micro- and/or nano-Raman lasers.

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Tsuchizawa, T., K. Yamada, H. Fukuda, T. Watanabe, Jun-ichi Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita. "Microphotonics devices based on silicon microfabrication technology." IEEE Journal of Selected Topics in Quantum Electronics 11, no. 1 (January 2005): 232–40. http://dx.doi.org/10.1109/jstqe.2004.841479.

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Borselli, Matthew, Thomas J. Johnson, and Oskar Painter. "Measuring the role of surface chemistry in silicon microphotonics." Applied Physics Letters 88, no. 13 (March 27, 2006): 131114. http://dx.doi.org/10.1063/1.2191475.

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Lin, Pao Tai, Vivek Singh, Yan Cai, Lionel C. Kimerling, and Anu Agarwal. "Air-clad silicon pedestal structures for broadband mid-infrared microphotonics." Optics Letters 38, no. 7 (March 20, 2013): 1031. http://dx.doi.org/10.1364/ol.38.001031.

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Belyakov, V. A., V. A. Burdov, R. Lockwood, and A. Meldrum. "Silicon Nanocrystals: Fundamental Theory and Implications for Stimulated Emission." Advances in Optical Technologies 2008 (June 29, 2008): 1–32. http://dx.doi.org/10.1155/2008/279502.

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Silicon nanocrystals (NCs) represent one of the most promising material systems for light emission applications in microphotonics. In recent years, several groups have reported on the observation of optical gain or stimulated emission in silicon NCs or in porous silicon (PSi). These results suggest that silicon-NC-based waveguide amplifiers or silicon lasers are achievable. However, in order to obtain clear and reproducible evidence of stimulated emission, it is necessary to understand the physical mechanisms at work in the light emission process. In this paper, we report on the detailed theoretical aspects of the energy levels and recombination rates in doped and undoped Si NCs, and we discuss the effects of energy transfer mechanisms. The theoretical calculations are extended toward computational simulations of ensembles of interacting nanocrystals. We will show that inhomogeneous broadening and energy transfer remain significant problems that must be overcome in order to improve the gain profile and to minimize nonradiative effects. Finally, we suggest means by which these objectives may be achieved.

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Lin, Pao Tai, Vivek Singh, Hao-Yu Greg Lin, Tom Tiwald, Lionel C. Kimerling, and Anuradha Murthy Agarwal. "Low-Stress Silicon Nitride Platform for Mid-Infrared Broadband and Monolithically Integrated Microphotonics." Advanced Optical Materials 1, no. 10 (July 17, 2013): 732–39. http://dx.doi.org/10.1002/adom.201300205.

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Natrayan, L., P. V. Arul Kumar, S. Kaliappan, S. Sekar, Pravin P. Patil, R. Jayashri, and E. S. Esakki Raj. "Analysis of Incorporation of Ion-Bombarded Nickel Ions with Silicon Nanocrystals for Microphotonic Devices." Journal of Nanomaterials 2022 (August 16, 2022): 1–7. http://dx.doi.org/10.1155/2022/5438084.

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Nanotechnology is playing a greater role in biomedical engineering. Microphotonic technology is on another side, having faster growth with more requirements. The nanocrystals are a part of nanotechnology which uses silicon for manufacturing. These silicon nanocrystals have the optical property mostly used in microphotonic devices. Silicon nanocrystals are of biocompatibility with less toxicity. Therefore, the advancement in the silicon nanocrystal helps develop more microphotonic devices for biological purposes. One critical factor of silicon nanocrystal is the surface defects or surface imperfections. Surface passivation is the method employed for rectifying this disadvantage of silicon nanocrystal. Another major thing is that silicon nanocrystals are size dependent. So proper variation on the surface is required for yielding high performance of the nanocrystal. After characterizing the surface of the silicon nanocrystal, ion bombardment can occur. Nickel is a lustrous white chemical element which is less reactive when it is of a smaller size. So ion bombardment of nickel ion on the surface of the silicon nanocrystal can be done to improvise the performance of the microphotonic devices. Nearly there is an excess of 20 a.u. of photoluminescence intensity yielded. The relative fluorescence is also increased by 150 a.u. This research work enhanced the silicon nanocrystal using ion bombardment of nickel ion, which increased energy traps resulting in more intensities.

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Kimerling, Lionel C., and J. Michel. "Monolithic Microphotonic Integration on the Silicon Platform." ECS Transactions 41, no. 7 (December 16, 2019): 3–13. http://dx.doi.org/10.1149/1.3633281.

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Fabrizio, Enzo Di, Marco Baciocchi, Massimo Gentili, Luca Grella, and Luigi Mastrogiacomo. "Microphotonic Devices Fabricated by Silicon Micromachining Techniques." Japanese Journal of Applied Physics 36, Part 1, No. 12B (December 30, 1997): 7757–62. http://dx.doi.org/10.1143/jjap.36.7757.

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Harame, David L. "Perspectives on How the "Sige, Ge, & Related Compounds: Materials, Processing, and Devices" Field Has Changed over the Last 20 Years." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1181. http://dx.doi.org/10.1149/ma2022-02321181mtgabs.

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The field of electronic devices and materials has seen major changes over the last ~20 years. The SiGe, Ge, & Related Compounds: Material Processing, and Devices symposium has documented much of this change. In 2004 the meeting grew out of a desire for the ECS to have a special ongoing symposium on SiGe & Ge as a materials system with increasing importance in silicon semiconductor technology. In 2008 the symposium was expanded to include Ge and Related compounds including SiC and III-Vs on Silicon to recognize the important work in these areas. In 2010 the symposium was expanded to include work in nano-wires, nano-membranes, and light emitting structures with SiGe and/or Ge. In 2012 the symposium explored finfet devices and expanded to include the area of GeSn. In 2014 the symposium explored the use SiGe and related compounds in more complex and advanced structures. In 2016 the conference had a theme around SOI and the FDSOI technology in particular. In 2018 the themes were the ever expanding device structures and role epitaxy has played in it. Each year the plenary talks were selected to give a view of the industry and the conference. These talks give us insight into the symposium and how the field has changed over time. In 2004 the first symposium “SiGe 1: Materials, Processing, and Devices” focused on the SiGe HBT transistor performance and SiGe epitaxial technology. But CMOS scaling was also presented. These trends were reflected in the plenary talks were given by John Cressler on “Using SiGe HBTs for Mixed-Signal Circuits and Systems: Opportunities and Challenges” and Judy Hoyt on “Enhanced Mobility CMOS.” This was the first symposium and we set the conference organization with multiple topical committees and published the first proceedings. In 2006 the “SiGe and Ge 2” symposium continued the themes of SiGe and Ge Epitaxy, SiGe HBT, CMOS scalling, and added silicon photonics. The Plenary talks were given by Dimitris Antoniadis on “Channel Material Innovations for Continuing the Historical MOSFET Performance Increase with Scaling” and Cary Gunn on “CMOS Photonics for High Speed Interconnects.” In 2008 the “SiGe, Ge, & Related Compounds 3” symposium changed in composition bringing IIIV and other compounds into the symposium. The Plenary papers were by Krishna Saraswat on “Germanium for High-Performance MOSFETS and Optical Interconnects,” and Wiebe B. de Boer on “Si and SiGe Epitaxy in Perspective.” Krishna focused on the role of Ge in modern devices and Wiebe focused on the history of SiGe epitaxy at ASM. In 2010 the “SiGe, Ge, & Related Compounds 4” greatly expanded topics while maintaining the core of SiGe HBT and CMOS scaling. The plenary papers were given by K. Kuhn on “Past, Present, and Future: SiGe and CMOS Transistor Scaling” and L. Kimmerling on “Scaling Energy and Form Factor with Germanium Microphotonics.” The conference emphasis continued on SiGe epitaxy, CMOS scaling, and HBT performance with a new optoelectronics focus area. In 2012 the “SiGe, Ge, & Related Compounds 5” focused on the finfet and GeSn. The plenary papers were given by E. Nowak “Advanced CMOS scaling and FinFET Technology” and C. Hu on “FinFET and UTB – How to make very short channel MOSFETs.” There were 4 sessions containing papers with GeSn. In 2014 the “SiGe, Ge, & Related Compounds 6” returned to CMOS scaling and the SiGe HBT. The plenary papers were given by K. Uchida and T. Takahashi on “Extending the FETs: Challenges and Opportunities for New Materials and Structures” and L. Zimmermann (IHP) on “High-Performance Photonic BiCMOS – Next Generation More-than-Moore Technology for the Large Bandwidth Era.” In 2016 the “SiGe, Ge, & Related Compounds 7” focused on FDSOI. The plenary papers were given by Bruce Doris “FDSOI Past, Present and Future” and Carlos Mazure and S. Cristoloveanu “ FD-SOI: The History from Early Transistors to Today.” In 2018 the “SiGe, Ge, & Related Compounds 8” focused on CMOS scaling and SiGe as an enabling material. The plenary papers were given by Maszara, Witold on “Contemporary and Future Logic Devices” and by Tsu-Jae Liu on “ Silicon-Germanium: Enabler of Moore's Law.” In 2020 the “SiGe, Ge, & Related Compounds 9” symposium focused on III-Vs and Silicon Photonic Sensors. The plenary papers were given by N. Collaert on “The revival of compound semiconductors and how they will change the world in the 5G/6G era,” and Ben Miller on “Creating the Interface Universe between the Universe and Data with Integrated Photonic Sensors." Highlights from these plenary talks and symposium topics will be presented.

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Frankis, Henry, Daniel Su, Dawson Bonneville, and Jonathan Bradley. "A Tellurium Oxide Microcavity Resonator Sensor Integrated On-Chip with a Silicon Waveguide." Sensors 18, no. 11 (November 21, 2018): 4061. http://dx.doi.org/10.3390/s18114061.

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We report on thermal and evanescent field sensing from a tellurium oxide optical microcavity resonator on a silicon photonics platform. The on-chip resonator structure is fabricated using silicon-photonics-compatible processing steps and consists of a silicon-on-insulator waveguide next to a circular trench that is coated in a tellurium oxide film. We characterize the device’s sensitivity by both changing the temperature and coating water over the chip and measuring the corresponding shift in the cavity resonance wavelength for different tellurium oxide film thicknesses. We obtain a thermal sensitivity of up to 47 pm/°C and a limit of detection of 2.2 × 10−3 RIU for a device with an evanescent field sensitivity of 10.6 nm/RIU. These results demonstrate a promising approach to integrating tellurium oxide and other novel microcavity materials into silicon microphotonic circuits for new sensing applications.

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Janz, Siegfried, P. Cheben, A. Delage, A. Densmore, B. Lamontagne, E. Post, J. Schmid, et al. "Silicon Microphotonic Waveguide Technology for Sensing, Spectroscopy and Communications." ECS Transactions 3, no. 11 (December 21, 2019): 61–78. http://dx.doi.org/10.1149/1.2392920.

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Barwicz, Tymon, Charles W. Holzwarth, Peter T. Rakich, Miloš A. Popović, Erich P. Ippen, and Henry I. Smith. "Optical loss in silicon microphotonic waveguides induced by metallic contamination." Applied Physics Letters 92, no. 13 (March 31, 2008): 131108. http://dx.doi.org/10.1063/1.2903714.

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Schmid, J. H., P. Cheben, P. J. Bock, R. Halir, J. Lapointe, S. Janz, A. Delage, et al. "Refractive Index Engineering With Subwavelength Gratings in Silicon Microphotonic Waveguides." IEEE Photonics Journal 3, no. 3 (June 2011): 597–607. http://dx.doi.org/10.1109/jphot.2011.2139198.

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Shankar, Raji, and Marko Lončar. "Silicon photonic devices for mid-infrared applications." Nanophotonics 3, no. 4-5 (August 1, 2014): 329–41. http://dx.doi.org/10.1515/nanoph-2013-0027.

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AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.

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Janz, Siegfried, P. Waldron, Dan-Xia Xu, K. P. Yap, Winnie N. Ye, Pavel Cheben, Dan Dalacu, et al. "Microphotonic Elements for Integration on the Silicon-on-Insulator Waveguide Platform." IEEE Journal of Selected Topics in Quantum Electronics 12, no. 6 (November 2006): 1402–15. http://dx.doi.org/10.1109/jstqe.2006.880612.

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Velasco, Aitor V., Pavel Cheben, Przemek J. Bock, André Delâge, Jens H. Schmid, Jean Lapointe, Siegfried Janz, et al. "High-resolution Fourier-transform spectrometer chip with microphotonic silicon spiral waveguides." Optics Letters 38, no. 5 (February 25, 2013): 706. http://dx.doi.org/10.1364/ol.38.000706.

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Marconi, J. D., S. Arismar Cerqueira, J. T. Robinson, N. Sherwood-Droz, Y. Okawachi, H. E. Hernandez-Figueroa, M. Lipson, A. L. Gaeta, and H. L. Fragnito. "Performance investigation of microphotonic-silicon devices in a field-trial all-optical network." Optics Communications 282, no. 5 (March 2009): 849–55. http://dx.doi.org/10.1016/j.optcom.2008.11.018.

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Bock, Przemek J., Pavel Cheben, Jens H. Schmid, Jean Lapointe, André Delâge, Siegfried Janz, Geof C. Aers, Dan-Xia Xu, Adam Densmore, and Trevor J. Hall. "Subwavelength grating periodic structures in silicon-on-insulator: a new type of microphotonic waveguide." Optics Express 18, no. 19 (September 8, 2010): 20251. http://dx.doi.org/10.1364/oe.18.020251.

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Ogudo, Kingsley A., Diethelm Schmieder, Daniel Foty, and Lukas W. Snyman. "Optical propagation and refraction in silicon complementary metal–oxide–semiconductor structures at 750 nm: toward on-chip optical links and microphotonic systems." Journal of Micro/Nanolithography, MEMS, and MOEMS 12, no. 1 (March 6, 2013): 013015. http://dx.doi.org/10.1117/1.jmm.12.1.013015.

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Giovane, L. M., D. R. Lim, S. H. Ahn, T. D. Chen, J. S. Foresi, L. Liao, E. J. Oulette, et al. "Materials For Monolithic Silicon Microphotonics." MRS Proceedings 486 (1997). http://dx.doi.org/10.1557/proc-486-45.

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AbstractThe path for silicon materials development has been charted. By the year 2010 we will have fabricated integrated circuit chips containing 109 transistors with 40 Å thick gate oxides and 1000 Å minimum feature sizes running at 4 GHz clock speeds. It is conceivable that incremental advances on the current chip architecture will satisfy the required materials and process improvements. The interconnection problem is the only challenge without a proposed solution. The signal propagation delay between devices is now longer than the individual device gate delay. The resistance and capacitance associated with fine line Al interconnects limit speed and increase power consumption and crosstalk. High power line drivers are limited by the reliability constraint of electromigration. There is no current paradigm for 4 GHz, electronic clock distribution. Optical interconnection can remove the electronic transmission bandwidth limit. The main challenge is development of a silicon-compatible, microphotonic technology.Rare earth doping has provided a means of sharp-line electroluminescence from silicon at λ = 1.54 μm. Silicon's high index of refraction and low absorption in the near infrared yield an ideal optical waveguide. As with microelectronics, the silicon / silicon-dioxide materials system allows high levels of integration and functionality. The applications of silicon materials to light emission (Si:Er), optical waveguides (Si/SiO2), photonic switching (Si/SiO2) and photon detection (SiGe) are reviewed. These developments are discussed in the context of systems applications to communications and computation.

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Serpengüzel, Ali. "Microphotonics Applications of Silicon Microspheres." MRS Proceedings 934 (2006). http://dx.doi.org/10.1557/proc-0934-i08-04.

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ABSTRACTSilicon microspheres with high quality factors morphology dependent resonances are used for resonant detection and filtering in the near-infrared. The near-infrared light is coupled to the silicon microsphere with optical fiber half couplers. The observed morphology dependent resonances have quality factors of 100000. The experimentally measured quality factors are limited by the sensitivity of the experimental setup. These optical resonances provide the necessary narrow linewidths that are needed for high resolution optical filtering, Raman lasers, modulators, complementary metal oxide semiconductor (CMOS) compatible detectors in the near-infrared. The silicon microsphere shows promise as a building block for silicon microphotonics, a complementary technology to the already well established CMOS based microelectronics technology for the realization of future microelectrophotonic integration.

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Janz, Siegfried, Alexei Bogdanov, Pavel Cheben, André Delâge, Boris Lamontagne, Marie-Joseé Picard, Dan-Xia Xu, Kuan Pei Yap, and Winnie N. Ye. "Silicon-based Integrated Optics: Waveguide Technology to Microphotonics." MRS Proceedings 832 (2004). http://dx.doi.org/10.1557/proc-832-f1.1.

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ABSTRACTUsing a waveguide spectrometer chip as an example, we describe how high index contrast waveguides systems such as silicon-on-insulator can be combined with microphotonic design rules to extend the performance of waveguide devices. The challenges arising in the implementation of silicon microphotonic technology are discussed, and recent work addressing the issues of waveguide coupling, polarization sensitivity, waveguide loss and massively parallel data acquisition is reviewed.

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Luan, Hsin-Chiao, Desmond R. Lim, Lorenzo Colace, Gianlorezo Masini, Gaetano Assanto, Kazumi Wada, and Lionel C. Kimerling. "Germanium Photodetectors for Silicon Microphotonics by Direct Epitaxy on Silicon." MRS Proceedings 607 (1999). http://dx.doi.org/10.1557/proc-607-279.

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AbstractWe have grown high-quality Ge epilayers on Si using two-step ultrahigh vacuum/chemical-vapor-deposition followed by post-growth cyclic thermal annealing. Cyclic annealing was effective in reducing threading dislocation densities. The annealing process was improved by optimizing the dislocation velocity. We fabricated and tested metal-semiconductor-metal planar photodetectors using Ge epilayers grown on Si. Our measurement showed an improvement in the photodetector performance as a result of the improved materials quality. The process described in this paper for making high-quality Ge on Si is uncomplicated and can be easily integrated with Si CMOS processes.

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Palm, J., and L. C. Kimerling. "Defects and Future Silicon Technology." MRS Proceedings 378 (1995). http://dx.doi.org/10.1557/proc-378-703.

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AbstractThe interaction between device technology and the control of defects has been strong since the first transistor. The rapid and unparalled development of this technology can be monitored by changes in device size and process complexity, or reciprocally, in defect density. In the future the emphasis on computation functionality will shift to imaging and learning. In addition high volume manufacturing will cast an emphasis on capital cost, yield, effluent control and safety. These foci require the development of new sensitive defect assessment tools, the modelling of complex defect systems and the understanding of defect properties on the atomic scale. We shall illustrate this interplay between technology and materials science by topics in ULSI circuits, silicon photovoltaics and silicon microphotonics. For ULSI the control of both bulk and surface defects is decisive. The physical chemistry at the silicon surface plays a key role in metal contamination. We shall discuss the use of RF-PCD for in-line monitoring and investigation of reaction kinetics. Silicon for low cost, photovoltaic applications confronts problems involving complex defect systems, but comparatively simple processes. The goal is to optimize growth and cell processing. The objective of silicon microphotonics is to establish an IC compatible process technology for integration of optical interconnection with silicon electronics. By building the first silicon-based LED operating at λ = 1.54 μm at room temperature it has been shown that erbium doping is a viable approach. Codoping with F or O largely enhances the light output. We will show a process simulator for the Si:Er:F system as an example for ligand field engineering.

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Niu, F., A. R. Teren, B. H. Hoerman, and B. W. Wessels. "Epitaxial Ferroelectric BaTiO3 Thin Films for Microphotonic Applications." MRS Proceedings 637 (2000). http://dx.doi.org/10.1557/proc-637-e1.9.

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AbstractEpitaxial ferroelectric BaTiO3 thin films have been developed as a material for microphotonics. Efforts have been directed toward developing these materials for thin film electro-optic modulators. Films were deposited by metalorganic chemical vapor deposition (MOCVD) on both MgO and silicon substrates. The electro-optic properties of the thin films were measured. For BaTiO3 thin films grown on (100) MgO substrates, the effective electro-optic coefficient, reff depended on the magnitude and direction of the electric field. Coefficients as high as 260 pm/V have been measured. Investigation of BaTiO3 films on silicon has been undertaken. Epitaxial BaTiO3 thin films were deposited by MOCVD on (100) MgO layers grown on silicon (100) substrates by metal-organic molecular beam epitaxy (MOMBE). The MgO serves as the low index optical cladding layer as well as an insulating layer. X-ray diffraction and transmission electron microscopy (TEM) indicated that BaTiO3 was epitaxial with an orientational relation given by BaTiO3 (100)//Si (100) and BaTiO3[011]//Si [011]. Polarization measurements indicated that the BaTiO3 epitaxial films on Si were in the ferroelectric state.

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Stolfi, M., L. Dal Negro, J. Michel, X. Duan, J. Le Blanc, J. Haavisto, and L. C. Kimerling. "CMOS Compatible Erbium Coupled Si Nanocrystal Thin Films for Microphotonics." MRS Proceedings 832 (2004). http://dx.doi.org/10.1557/proc-832-f11.8.

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ABSTRACTEr doped Si-rich SiO2 films were deposited through reactive RF magnetron co-sputtering and subjected to a single annealing step to simultaneously form silicon nanocrystals (Si-nc's) and activate the Er emission. Reference Er in stoichiometric SiO2 (Er:SiO2) films were deposited for comparison and the Er emission in the presence of Si-nc's was optimized with respect to the annealing temperature. The Er emission from Er in SiO2 containing Si-nc's (Er:SiO2+Si-nc) films is maximized at annealing temperatures between 600 °C and 800 °C, where the 1.54 μm emission is enhanced by more than two orders of magnitude relative to Er:SiO2 samples. Efficient energy coupling between Si-nc's and Er ions was demonstrated through excitation cross section measurements and non-resonant Er excitation experiments for samples annealed at temperatures as low as 600 °C. Since strong emission can be achieved from Er:SiO2+Si-nc films deposited through a standard CMOS process and annealed at temperatures below 700 °C, they can be used to fabricate CMOS compatible light

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Koala, Ratmalgre A. S. D., Masayuki Fujita, and Tadao Nagatsuma. "Nanophotonics-inspired all-silicon waveguide platforms for terahertz integrated systems." Nanophotonics, February 8, 2022. http://dx.doi.org/10.1515/nanoph-2021-0673.

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Abstract Recent advances in silicon (Si) microphotonics have enabled novel devices for the terahertz (THz) range based on dielectric waveguides. In the past couple of years, dielectric waveguides have become commonplace for THz systems to mitigate issues in efficiency, size, and cost of integration and packaging using metal-based waveguides. Therefore, THz systems have progressively evolved from cumbersome collections of discreet components to THz-wave integrated circuits. This gradual transition of THz systems from numerous components to compact integrated circuits has been facilitated at each step by incredible advances in all-Si waveguides allowing low-loss, low dispersion, and single-mode waveguiding operation. As such, all-Si waveguides position themselves as highly efficient interconnects to realize THz integrated circuits and further large-scale integration in the THz range. This review article intends to reevaluate the evolution stages of THz integrated circuits and systems based on all-Si waveguides.

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Sekhar, Parveen Kumar, Dinesh Kumar Sood, and Shekhar Bhansali. "Growth of Silica Nanowires Catalysed by Pd Ion Implantation into Si(100)." MRS Proceedings 900 (2005). http://dx.doi.org/10.1557/proc-0900-o03-14.

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ABSTRACTSelective synthesis of silica nanowires on silicon wafers catalyzed by Pd ion implantation is reported.Nanoclusters of palladium silicide acts as seeds for nucleation of wires following a Vapor-Liquid-Solid (VLS) growth model. The consumption of silicide towards nanowire growth is confirmed through Rutherford Backscattering Spectrometry (RBS).The influence of growth time, implantation dose and heating temperature on the structure and morphology of the wires is investigated. Optimization of the these tunable parameters would be needed to facilitate controlled and directed bottom-up growth of silica nanowires.Such selective synthesis may enable a large number of applications in wide areas of future technologies such as localization of light, low dimensional waveguides for functional microphotonics, scanning near field optical microscopy (SNOM), optical interconnects, sacrificial templates, optical transmission antennae and biosensors.

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Saini, Sajan, Jessica G. Sandland, Anat Eshed, Daniel K. Sparacin, Luca Dal Negro, Jurgen Michel, and Lionel C. Kimerling. "A High Index Contrast Silicon Oxynitride Materials Platform for Er-doped Microphotonic Amplifiers." MRS Proceedings 817 (2004). http://dx.doi.org/10.1557/proc-817-l1.7.

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AbstractEr-based optical amplification continues to be the ideal low noise, WDM crosstalk free, broadband candidate for waveguide amplifiers. Design analysis of the applicability of Er-Doped Waveguide Amplifiers (EDWAs) for micron-scale integrated photonics in a planar lightwave circuit concludes: (i) an >80× increase in gain efficiency, and (ii) a >40×increase in device shrink can be realized, for a high index contrast EDWA (with a core-cladding index difference of δn=0.1↔0.7), compared to a conventional Er-doped fiber amplifier. The materials challenge now is to establish a robust materials system which meets this high index difference design requirement while simultaneously leveraging the capability of silicon (Si) processing: a host platform for EDWAs must be found which can integrate with Si Microphotonics. Silicon nitride (Si3N4), silicon oxide (SiO2) and a miscible silicon oxynitride alloy (SiON) of the two meet this materials challenge. We present the results of reactive and conventional magnetron sputtering based materials characterization for this high index host system. Room temperature and 4 K photo-luminescence studies for annealed samples show the reduction of non-radiative de-excitation centers while maintaining an amorphous host structure. Atomic force microscopy shows less than 1 nm peak-to-peak roughness in deposited films. Prism coupler measurements show a reliable reproducibility of host index of refraction with waveguide scattering loss <2 dB/cm. We conclude that the SiON host system forms an optimal waveguide core for an SiO2-clad EDWA. Initial gain measurements show a gain coefficient of approximately 3.9 dB/cm.

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He, Sailing, Daoxin Dai, Bo Yang, Qingkun Liu, and Yaocheng Shi. "Small polymer microphotonic integrated devices on silicon substrate." SPIE Newsroom, February 18, 2011. http://dx.doi.org/10.1117/2.1201101.003333.

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"Silicon Microphotonic Waveguide Technology for Sensing, Spectroscopy and Communications." ECS Meeting Abstracts, 2006. http://dx.doi.org/10.1149/ma2006-02/29/1346.

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Journal articles on the topic 'Silicon microphotonics'

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