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Journal articles on the topic 'Silicon electronic matrix'

Author: Grafiati

Published: 4 June 2021

Last updated: 15 February 2022

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1

Li, Jinghua, Enming Song, Chia-Han Chiang, Ki Jun Yu, Jahyun Koo, Haina Du, Yishan Zhong, et al. "Conductively coupled flexible silicon electronic systems for chronic neural electrophysiology." Proceedings of the National Academy of Sciences 115, no. 41 (September 18, 2018): E9542—E9549. http://dx.doi.org/10.1073/pnas.1813187115.

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Materials and structures that enable long-term, intimate coupling of flexible electronic devices to biological systems are critically important to the development of advanced biomedical implants for biological research and for clinical medicine. By comparison with simple interfaces based on arrays of passive electrodes, the active electronics in such systems provide powerful and sometimes essential levels of functionality; they also demand long-lived, perfect biofluid barriers to prevent corrosive degradation of the active materials and electrical damage to the adjacent tissues. Recent reports describe strategies that enable relevant capabilities in flexible electronic systems, but only for capacitively coupled interfaces. Here, we introduce schemes that exploit patterns of highly doped silicon nanomembranes chemically bonded to thin, thermally grown layers of SiO2 as leakage-free, chronically stable, conductively coupled interfaces. The results can naturally support high-performance, flexible silicon electronic systems capable of amplified sensing and active matrix multiplexing in biopotential recording and in stimulation via Faradaic charge injection. Systematic in vitro studies highlight key considerations in the materials science and the electrical designs for high-fidelity, chronic operation. The results provide a versatile route to biointegrated forms of flexible electronics that can incorporate the most advanced silicon device technologies with broad applications in electrical interfaces to the brain and to other organ systems.

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2

Zimina, Anna, Stefan Eisebitt, Wolfgang Eberhardt, Johannes Heitmann, and Margit Zacharias. "Electronic structure and chemical environment of silicon nanoclusters embedded in a silicon dioxide matrix." Applied Physics Letters 88, no. 16 (April 17, 2006): 163103. http://dx.doi.org/10.1063/1.2193810.

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3

Cho, Eun-Chel, Martin A. Green, Gavin Conibeer, Dengyuan Song, Young-Hyun Cho, Giuseppe Scardera, Shujuan Huang, et al. "Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells." Advances in OptoElectronics 2007 (August 28, 2007): 1–11. http://dx.doi.org/10.1155/2007/69578.

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We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.

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4

Nguyen, Ngoc Bich, Christian Dufour, and Sebastien Petit. "Atomic and electronic structure of silicon nanocrystals embedded in a silica matrix." Journal of Physics: Condensed Matter 20, no. 45 (October 13, 2008): 455209. http://dx.doi.org/10.1088/0953-8984/20/45/455209.

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5

Belolipetskiy, A. V., O. B. Gusev, A. P. Dmitriev, E. I. Terukov, and I. N. Yassievich. "Trions in silicon nanocrystals in an amorphous hydrogenated silicon matrix." Semiconductors 48, no. 2 (February 2014): 235–38. http://dx.doi.org/10.1134/s1063782614020043.

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6

Mamichev, D. A., V. Yu Timoshenko, A. V. Zoteyev, L. A. Golovan, E. Yu Krutkova, A. V. Laktyunkin, P. K. Kashkarov, E. V. Astrova, and T. S. Perova. "Enhanced Raman scattering in grooved silicon matrix." physica status solidi (b) 246, no. 1 (October 10, 2008): 173–76. http://dx.doi.org/10.1002/pssb.200844163.

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7

Velavan, K., and K. Palanikumar. "Effect of Silicon Carbide (SiC) on Stir Cast Aluminium Metal Matrix Hybrid Composites – A Review." Applied Mechanics and Materials 766-767 (June 2015): 293–300. http://dx.doi.org/10.4028/www.scientific.net/amm.766-767.293.

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Nowadays, the usage of metal matrix composites is increased in aero space, automotive, marine, electronic and manufacturing industries. Aluminum metal matrix composites have attained significant attention due to their good mechanical properties like strength, stiffness, abrasion and impact resistant, corrosion resistance. When compared to the conventional materials Aluminum Silicon Carbide (AlSiC) hybrid materials available in minimum cost. In the present study, based on the literature review, the individual Silicon Carbide with aluminum and combined influence of Silicon Carbide with graphite reinforcements Aluminium Metal Matrix Composites and Silicon Carbide with mica reinforcement Aluminum is studied. The monolithic composite materials are combined in different compositions by stir casting fabrication techniques, to produce composite materials. The literature review framework in this paper provides a clear overview of the usage of Graphite and Mica as a reinforcing agent in different composition matrices along with its distinctive performances.

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8

Zhang, Fei Hu, Kai Wang, Peng Qiang Fu, and Meng Nan Wu. "Research on Grinding of Silicon Particles Reinforced Aluminum Matrix Composites with High Volume Fraction." Advanced Materials Research 1017 (September 2014): 98–103. http://dx.doi.org/10.4028/www.scientific.net/amr.1017.98.

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With silicon particles reinforced aluminum matrix composites with high volume fraction becoming a new hotspot on research and application in the aerospace materials and electronic packaging materials, the machinability of this material needs to be explored. This paper reports research results obtained from the surface grinding experiment of silicon particles reinforced aluminum matrix composites using black silicon carbide wheel, green silicon carbide wheel, white fused alumina wheel and chromium alumina wheel. The issues discussed are grinding force, surface roughness, the comparison of different grinding wheels, the micro-morphology of the work piece. The results showed that the grinding force was related with the grinding depth and the grinding wheel material, the grinding force was increasing as the grinding depth growing. The surface roughness was between 0.29μm and 0.48μm using the silicon carbide wheel. The surface of the work piece had concaves caused by silicon particles shedding and grooves caused by the grains observed by the SEM and CLSM.

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9

Khatami, Mohammad Mahdi, Gautam Gaddemane, Maarten L. Van de Put, Massimo V. Fischetti, Mohammad Kazem Moravvej-Farshi, Mahdi Pourfath, and William G. Vandenberghe. "Electronic Transport Properties of Silicane Determined from First Principles." Materials 12, no. 18 (September 11, 2019): 2935. http://dx.doi.org/10.3390/ma12182935.

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Silicane, a hydrogenated monolayer of hexagonal silicon, is a candidate material for future complementary metal-oxide-semiconductor technology. We determined the phonon-limited mobility and the velocity-field characteristics for electrons and holes in silicane from first principles, relying on density functional theory. Transport calculations were performed using a full-band Monte Carlo scheme. Scattering rates were determined from interpolated electron–phonon matrix elements determined from density functional perturbation theory. We found that the main source of scattering for electrons and holes was the ZA phonons. Different cut-off wavelengths ranging from 0.58 nm to 16 nm were used to study the possible suppression of the out-of-plane acoustic (ZA) phonons. The low-field mobility of electrons (holes) was obtained as 5 (10) cm2/(Vs) with a long wavelength ZA phonon cut-off of 16 nm. We showed that higher electron (hole) mobilities of 24 (101) cm2/(Vs) can be achieved with a cut-off wavelength of 4 nm, while completely suppressing ZA phonons results in an even higher electron (hole) mobility of 53 (109) cm2/(Vs). Velocity-field characteristics showed velocity saturation at 3 × 105 V/cm, and negative differential mobility was observed at larger fields. The silicane mobility was competitive with other two-dimensional materials, such as transition-metal dichalcogenides or phosphorene, predicted using similar full-band Monte Carlo calculations. Therefore, silicon in its most extremely scaled form remains a competitive material for future nanoscale transistor technology, provided scattering with out-of-plane acoustic phonons could be suppressed.

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10

Justo, João F., Cesar R. S. da Silva, I. Pereyra, and Lucy V. C. Assali. "Structural and Electronic Properties of Si_1-xC_xO₂." Materials Science Forum 483-485 (May 2005): 577–80. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.577.

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There is growing interest in understanding the properties of SiC-SiO2 interfaces, which can be formed by oxidation of silicon carbide surfaces. Here, we used variable cell shape ab initio molecular dynamics to investigate the structural and electronic properties of crystalline phases of silicon oxycarbide which could appear within such interfaces. We find that carbonoxygen single bonds may remain stable inside a silicon oxide matrix. For the Si2CO6 compound, there are at least two crystalline phases, both having large bulk modulii and wide bandgaps.

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11

Joo-Han Kim, Yongtaek Hong, and J. Kanicki. "Amorphous silicon TFT-based active-matrix organic polymer LEDs." IEEE Electron Device Letters 24, no. 7 (July 2003): 451–53. http://dx.doi.org/10.1109/led.2003.814999.

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12

Nishihara, T., and Y. Ito. "A quasi-matrix ferroelectric memory for future silicon storage." IEEE Journal of Solid-State Circuits 37, no. 11 (November 2002): 1479–84. http://dx.doi.org/10.1109/jssc.2002.802358.

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13

Gribov, B. G., K. V. Zinov’ev, O. N. Kalashnik, N. N. Gerasimenko, D. I. Smirnov, and V. N. Sukhanov. "Growth of nanocrystalline silicon from a matrix of amorphous silicon monoxide." Semiconductors 47, no. 13 (December 2013): 1684–86. http://dx.doi.org/10.1134/s1063782613130071.

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14

Klauk, Hagen, Steven L. Wright, Lauren F. Palmateer, Suzanne E. Mohney, and Thomas N. Jackson. "Hydrogenated amorphous silicon germanium black-matrix material for active-matrix liquid-crystal displays." Journal of the Society for Information Display 5, no. 4 (1997): 393. http://dx.doi.org/10.1889/1.1985186.

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15

Yuan, Ming, Zheng Ren Huang, Shao Ming Dong, and Dong Liang Jiang. "Microstructure of C_f/SiC Composite with Precursor of Hexamethyldisilazane by Chemical Vapor Infiltration." Key Engineering Materials 336-338 (April 2007): 1248–50. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.1248.

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A method of waved-thermal field chemical vapor infiltration was introduced. And interphases of silicon carbide layer and carbon layer were processed via the route. The preforms with the interfacial coatings were densified by method of forced-flow thermal-gradient chemical vapor infiltration (FCVI) employing hexamethyldisilazane (HMDS) as precursor material of the matrix. The matrix of the composites annealed at 1400°C consists of nano-polycrystalline silicon carbide. The configuration of fracture surface was observed by scanning electronic microscopy (SEM). The interphases behaved successfully as mechanical fuse for the reinforcing fibers.

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16

Sidhu, L. S., and S. Zukotynski. "Monohydride clustering in the amorphous silicon matrix." Journal of Non-Crystalline Solids 246, no. 1-2 (April 1999): 65–72. http://dx.doi.org/10.1016/s0022-3093(99)00018-6.

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17

Lehmann, V. "Porous silicon matrix for chemical synthesis and chromatograpy." physica status solidi (a) 202, no. 8 (June 2005): 1365–68. http://dx.doi.org/10.1002/pssa.200461103.

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18

Khalil, R., Vitaly V. Kveder, Wolfgang Schröter, and Michael Seibt. "Electrical Properties of Clustered and Precipitated Iron in Silicon." Solid State Phenomena 108-109 (December 2005): 109–14. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.109.

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Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.

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19

Cao, Dao Tran, Cao Tuan Anh, and Luong Truc Quynh Ngan. "Vertical-Aligned Silicon Nanowire Arrays with Strong Photoluminescence Fabricated by Metal-Assisted Electrochemical Etching." Journal of Nanoelectronics and Optoelectronics 15, no. 1 (January 1, 2020): 127–35. http://dx.doi.org/10.1166/jno.2020.2684.

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Metal-assisted chemical etching of silicon is a commonly used method to fabricate vertical aligned silicon nanowire arrays. In this report we show that if in the above method the chemical etching is replaced by the electrochemical one, we can also produce silicon nanowire arrays, but with a special characteristic-extremely strong photoluminescence. Further research showed that the huge photoluminescence intensity of the silicon nanowire arrays made by metal-assisted electrochemical etching is related to the anodic oxidation of the silicon nanowires which has occurred during the electrochemical etching. It is most likely that the luminescence of the silicon nanowire arrays made with metal-assisted electrochemical etching is the luminescence of silicon nanocrystallites (located on the surface of silicon nanowire fibers) embedded in a silicon oxide matrix, similar to that in a silicon rich oxide system.

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20

Li, DeXing, Linhan Lin, and Jiayou Feng. "Electronic state and momentum matrix of H-passivated silicon nanonets: A first-principles calculation." Physica E: Low-dimensional Systems and Nanostructures 42, no. 5 (March 2010): 1583–89. http://dx.doi.org/10.1016/j.physe.2009.12.049.

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21

Deepak. "Organic Electronics: Successes in Organic Light Emitting Diodes and Display Technology." Materials Science Forum 736 (December 2012): 241–49. http://dx.doi.org/10.4028/www.scientific.net/msf.736.241.

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Whereas single crystal silicon limited to 300 mm in diameter dominates the bulk of electronic devices, when electronics is required on a larger scale we have to rely on either amorphous or multi-crystalline materials. In this category, the organic semiconductors have made rapid in-roads. Among their applications, most notable successes are organic light emitting diodes (OLEDs) based displays. But, these OLEDs could also be made to emit in ultraviolet (UV) as shown through polysilanes devices. Two materials that we have investigated emit in UV or near UV. The emission spectrum could be manipulated by modifying the side groups on the main Si chain. Further discussed in the paper are full colour passive matrix displays we have made and development of thin films transistor for moving towards active matrix displays.

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22

Azmi, K., M. N. Derman, A. M. Mustafa Al Bakri, and A. V. Sandu. "Cu-SiC_p Composites as Advanced Electronic Packaging Materials." Key Engineering Materials 594-595 (December 2013): 852–56. http://dx.doi.org/10.4028/www.scientific.net/kem.594-595.852.

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The demand for advanced thermal management materials such as silicon carbide particles reinforced copper matrix (Cu-SiCp) composites is increasing due to the stringent design requirement in the electronic packaging industries. High interest on Cu-SiCp composites is highlighted by the high thermal conductivity and low coefficient of thermal expansion (CTE) properties. However, the thermal properties of the Cu-SiCp composites are constrained by the bonding between the copper matrix and the silicon carbide particles (SiCp) reinforcement. In the powder metallurgical (PM) methodology in particular, the bonding between the two constituents is weak, thus demoting the thermal properties of the Cu-SiCp composites. In order to improve the interface bonding, the SiCp were copper coated via electroless coating process. Based on the experimental results and findings, a continuous copper deposition on the SiCp was obtained via the electroless plating process. The copper film was found to be high in purity and homogeneously deposited on the SiCp surfaces. The CTE values of the Cu-Coated Cu-SiCp composites were found significantly lower than those of the non-Coated Cu-SiCp composites and were in agreement with Kernels model which accounts for both the shear and isostatic stresses developed in the component phases.

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23

Vidhya, V. S., P. Padmavathy, K. R. Murali, C. Sanjeeviraja, P. Manisankar, and M. Jayachandran. "Development of porous silicon matrix and characteristics of porous silicon/tin oxide structures." Journal of Non-Crystalline Solids 357, no. 6 (March 2011): 1522–26. http://dx.doi.org/10.1016/j.jnoncrysol.2011.01.003.

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24

Timoshenko, V. Yu, D. M. Zhigunov, P. K. Kashkarov, O. A. Shalygina, S. A. Teterukov, R. J. Zhang, M. Zacharias, M. Fujii, and Sh Hayashi. "Photoluminescence properties of erbium-doped structures of silicon nanocrystals in silicon dioxide matrix." Journal of Non-Crystalline Solids 352, no. 9-20 (June 2006): 1192–95. http://dx.doi.org/10.1016/j.jnoncrysol.2005.11.119.

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25

Shalygina, O. A., I. A. Kamenskikh, D. M. Zhigunov, V. Yu Timoshenko, P. K. Kashkarov, M. Zacharias, and M. Fujii. "Optical Properties of Silicon Nanocrystals in Silicon Dioxide Matrix Over Wide Ranges of Excitation Intensity and Energy." Journal of Nanoelectronics and Optoelectronics 4, no. 1 (April 1, 2009): 147–51. http://dx.doi.org/10.1166/jno.2009.1014.

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26

Chang, Geng-rong, Fei Ma, Da-yan Ma, and Ke-wei Xu. "Multi-band silicon quantum dots embedded in an amorphous matrix of silicon carbide." Nanotechnology 21, no. 46 (October 26, 2010): 465605. http://dx.doi.org/10.1088/0957-4484/21/46/465605.

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27

Cai, Hui, Ya Ping Wang, Xiao Ping Song, and Bing Jun Ding. "Phase Composition, Microstructure and Thermal Diffusivity of Cu/Si Composites Sintering Temperature Dependence." Advanced Materials Research 275 (July 2011): 200–203. http://dx.doi.org/10.4028/www.scientific.net/amr.275.200.

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Cu/Si composites may become novel high-performance electronic packaging materials owing to combining the advantages of copper and silicon components. Here, we prepared Cu/Si composites by being sintered below and above eutectic temperature 802 °C, respectively, and found that sintering temperature notably affects their composition, microstructure and thermal diffusivity. The composites sintered at 780 °C are composed of copper and silicon, exhibiting dispersed silicon particles and continuous copper matrix, but those sintered at 820 °C primarily contain Cu3Si compounds, and a porous microstructure is observed. The thermal diffusivity of the former is over 21 times higher than that of the latter.

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28

Eljarrat, Alberto, Lluís López-Conesa, Julian López-Vidrier, Sergi Hernández, Blas Garrido, César Magén, Francesca Peiró, and Sònia Estradé. "Retrieving the electronic properties of silicon nanocrystals embedded in a dielectric matrix by low-loss EELS." Nanoscale 6, no. 24 (2014): 14971–83. http://dx.doi.org/10.1039/c4nr03691c.

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29

Chen, Q. Y., and L. Wang. "Infrared response of small silver particles in silicon matrix." Superlattices and Microstructures 4, no. 3 (January 1988): 265–68. http://dx.doi.org/10.1016/0749-6036(88)90163-2.

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30

Krismastuti, Fransiska S. H., Stephanie Pace, and Nicolas H. Voelcker. "Porous Silicon Resonant Microcavity Biosensor for Matrix Metalloproteinase Detection." Advanced Functional Materials 24, no. 23 (March 3, 2014): 3639–50. http://dx.doi.org/10.1002/adfm.201304053.

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31

Sun, Xiaoyu, Jijun Feng, Luming Zhong, Hongliang Lu, Wenjie Han, Fuling Zhang, Ryoichi Akimoto, and Heping Zeng. "Silicon nitride based polarization-independent 4 × 4 optical matrix switch." Optics & Laser Technology 119 (November 2019): 105641. http://dx.doi.org/10.1016/j.optlastec.2019.105641.

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32

Zhou, Qing, Shaoming Dong, Yusheng Ding, Zhen Wang, Zhengren Huang, and Dongliang Jiang. "Three-dimensional carbon fiber-reinforced silicon carbide matrix composites by vapor silicon infiltration." Ceramics International 35, no. 6 (August 2009): 2161–69. http://dx.doi.org/10.1016/j.ceramint.2008.11.023.

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33

Mohd Salim, Nurul Nadia, H. Zuhailawati, Hasmaliza Mohamad, and A. S. Anasyida. "Sic-Reinforced Aluminum-Silicon Composite via Pressureless Infiltration Using Polystyrene as External Binder for Electronic Assemblies." Materials Science Forum 819 (June 2015): 220–25. http://dx.doi.org/10.4028/www.scientific.net/msf.819.220.

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SiC-reinforced aluminum composite was developed by pressureless infiltration technique using polystyrene as external binder. The metal matrix composites obtained were characterized for phase composition, microstructure, density, porosity, hardness and thermal expansion. The SiC particles were uniformly distributed within the Al-Si matrix with the help of polystyrene as external binder. The variation in the density of the composites was found to be linear with volume percent of SiC. The hardness increased with increasing SiC content and highest hardness was 64.52 HV achieved with addition of 20 vol.% SiC. Thermal conductivity of the composites increased with increasing of SiC volume fraction up to 27.34 W/mK.

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34

Konakov, Anton A., Vladimir A. Belyakov, and Vladimir A. Burdov. "Electronic States and Optical Gap of Phosphorus-Doped Silicon Nanocrystals Embedded in a Silica Host Matrix." Solid State Phenomena 205-206 (October 2013): 486–91. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.486.

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Using the envelope-function approximation the electronic states and the optical gap of silicon nanocrystals heavily doped with phosphorus have been calculated. Assuming the uniform impurity distribution over the crystallite volume we have found the fine structure of the electron ground state (induced by the valley-orbit interaction) and the optical gap as a function of the crystallite size and donor concentration. It is shown that the energy of the ground singlet state decreases almost linearly as the concentration increases, while the valley-orbit splitting increases nonlinearly. Phosphorus doping also results in the decrease of the nanocrystal gap with increasing the impurity concentration.

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35

Parameswaran, Ramya, Kelliann Koehler, Menahem Y. Rotenberg, Michael J. Burke, Jungkil Kim, Kwang-Yong Jeong, Barbara Hissa, et al. "Optical stimulation of cardiac cells with a polymer-supported silicon nanowire matrix." Proceedings of the National Academy of Sciences 116, no. 2 (December 11, 2018): 413–21. http://dx.doi.org/10.1073/pnas.1816428115.

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Electronic pacemakers can treat electrical conduction disorders in hearts; however, they are invasive, bulky, and linked to increased incidence of infection at the tissue–device interface. Thus, researchers have looked to other more biocompatible methods for cardiac pacing or resynchronization, such as femtosecond infrared light pulsing, optogenetics, and polymer-based cardiac patches integrated with metal electrodes. Here we develop a biocompatible nongenetic approach for the optical modulation of cardiac cells and tissues. We demonstrate that a polymer–silicon nanowire composite mesh can be used to convert fast moving, low-radiance optical inputs into stimulatory signals in target cardiac cells. Our method allows for the stimulation of the cultured cardiomyocytes or ex vivo heart to beat at a higher target frequency.

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36

RAMIREZ-PORRAS, ARTURO. "ANALYSIS OF VOLTAGE SIGNALS BY FLICKER NOISE METHODOLOGY APPLIED ON POROUS SILICON FILMS GROWTH." Surface Review and Letters 15, no. 05 (October 2008): 613–17. http://dx.doi.org/10.1142/s0218625x08011792.

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The Flicker Noise Analysis methodology is applied on voltage signals recorded when the electrochemical etching of crystalline surfaces of silicon is performed. The porous silicon material resulting from this procedure is composed of nanocrystals possessing remarkable properties which can be employed in the development of optical, electronic, or biological sensor devices. As a result of the analysis, two dynamic processes during the electrochemical reaction have been identified: one related to the dissolution of the crystalline matrix and the other related to the porous morphology itself.

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37

NAKHMANSON, S. M., N. MOUSSEAU, G. T. BARKEMA, P. M. VOYLES, and D. A. DRABOLD. "MODELS OF PARACRYSTALLINE SILICON WITH A DEFECT-FREE BANDGAP." International Journal of Modern Physics B 15, no. 24n25 (October 10, 2001): 3253–57. http://dx.doi.org/10.1142/s0217979201007580.

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Recently there have been attempts to create physically realistic models for para/poly-crystalline silicon (containing randomly oriented c-Si grains embedded in a disordered matrix) by means of empirical molecular dynamics. These models demonstrate acceptable geometrical and vibrational properties but fail to reproduce the correct electronic bandgap due to the presence of numerous "frozen-in" coordination defects. We propose a new procedure for the preparation of more realistic models of paracrystalline silicon based on a modification of the bond-switching method of Wooten, Winer and Weaire. Our new method allows us to create interfaces between the crystalline and disordered phases of Si with no coordination defects. Models with 400, 1000, and 4000 atoms were constructed. All the models have ~10 atomic % of the crystalline phase. The two smaller models contain a single crystalline grain and the largest model contains 4 randomly oriented grains. Our models show good geometrical and vibrational properties compared to good continuous random networks models of a-Si and also display excellent optical properties, correctly reproducing the electronic bandgap of amorphous silicon.

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38

Azmi, K., M. N. Derman, A. M. Mustafa Al Bakri, and A. V. Sandu. "Thermal Expansion Behavior of the Electroless Copper Coated Cu-SiC_p Composites Fabricated via the Conventional Powder Metallurgical Technique." Key Engineering Materials 594-595 (December 2013): 857–61. http://dx.doi.org/10.4028/www.scientific.net/kem.594-595.857.

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The introduction of the metal matrix composites as the advanced electronic packaging materials is highly anticipated because their thermal properties can be engineered to match those of semiconductors, ceramics substrates and optical fibers. Among these advanced packaging materials, silicon carbide particles reinforced copper matrix (Cu-SiCp) composites are highly rated due to the high thermal conductivity of copper and low coefficient of thermal expansion (CTE) of silicon carbide. However, the Cu-SiCp composites fabricated via the conventional powder metallurgy (PM) technique usually have immature thermophysical properties due to the weak bonding between the copper matrix and the SiCp reinforcement. In order to improve the bonding between the two constituents, the SiCp were coated with copper via electroless coating process prior to PM fabrication processes. Based on the experimental results, The CTE and porosity of the Cu-SiCp composites were significantly affected by the volume fraction of SiCp. Furthermore, the CTE and porosity of the Cu-Coated Cu-SiCp composites were significantly lower than the non-Coated Cu-SiCp composites. These differences were mainly contributed by the nature of the bonding between the copper matrix and SiCp reinforcement.

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39

Tang, Jin, Ke Xin Chen, and C. S. Fu. "Preparation and Properties of β-Si₃N₄/Epoxy Matrix Composite." Key Engineering Materials 336-338 (April 2007): 1350–52. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.1350.

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Thermally conducting, but electrically insulating, polymer-matrix composites exhibiting low dielectric constant are needed for electronic packaging. For developing such composites, this work used silicon nitride particles as fillers and epoxy as matrix. The thermal conductivity of Si3N4 particles epoxy-matrix composites was increased by up to 31.4 times than that of neat polymer by silane surface treatment of the particles prior to composites fabrication. The increase in thermal conductivity is due to decrease in the filler-matrix thermal contact resistance through the improvement of the interface between matrix and particles. At 45.4 vol. % silane-treated Si3N4 particles only, the thermal conductivity of epoxy-matrix composites reached 9.72W/ (m*K). The dielectric constant was also low (up to 5.0 at 1 MHz). However, Si3N4 addition caused the flexural strength and ductility to decrease from the values of the neat polymer.

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Sokolowski, Krystian, Piotr Palka, Stanislaw Blazewicz, and Aneta Fraczek- Szczypta. "Carbon nanofibers-based nanocomposites with silicon oxy-carbide matrix." Ceramics International 46, no. 1 (January 2020): 1040–51. http://dx.doi.org/10.1016/j.ceramint.2019.09.069.

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TSU, RAPHAEL. "ROOM TEMPERATURE SILICON QUANTUM DEVICES." International Journal of High Speed Electronics and Systems 09, no. 01 (March 1998): 145–63. http://dx.doi.org/10.1142/s0129156498000087.

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Quantum mechanical devices utilize the wave nature of electrons for their operations whenever the electron mean-free-path exceeds the appropriate dimensions of the device structure. Some of the issues such as the tunneling time, the reduction of the dielectric constant and the drastic increase in the binding energy of dopants are discussed. Lacking an appropriate barrier for silicon, the majority of quantum devices are fabricated with compound semiconductors. In the past several years, certain schemes appeared, such as the resonant tunneling via nanoscale silicon particles imbedded in an oxide matrix, and the superlattice barrier for silicon consisting of several periods of Si/O. There appears some doubt about the tunneling nature of the former, and the possiblity of dielectric breakdowns. This article aims to show that dielectric breakdowns can occur under fabrication conditions without using a controlled forming process. The latter results in epitaxially grown silicon beyond the superlattice barrier region, free of stacking fault defects, and thus is potentially important for silicon based quantum devices as well as serving as an SOI (silicon on insulator), without ion-implantation damage and oxygen inclusion. The replacement of SOI by the epitaxially grown Si/O superlattice barrier should promote the effort in high speed and low power MOSFET devices.

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Terekhov, V. A., S. K. Lazaruk, D. S. Usol’tseva, A. A. Leshok, P. S. Katsuba, I. E. Zanin, D. E. Spirin, A. A. Stepanova, and S. Yu Turishchev. "Specific features of the electronic and atomic structures of silicon single crystals in the aluminum matrix." Physics of the Solid State 56, no. 12 (December 2014): 2543–47. http://dx.doi.org/10.1134/s1063783414120336.

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Timoshenko, V. Yu. "Erbium Ion Luminescence of Silicon Nanocrystal Layers in a Silicon Dioxide Matrix Measured under Strong Optical Excitation." Physics of the Solid State 47, no. 1 (2005): 121. http://dx.doi.org/10.1134/1.1853460.

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Fenghong, Cao, Chen Chang, Wang Zhenyu, T. Muthuramalingam, and G. Anbuchezhiyan. "Effects of Silicon Carbide and Tungsten Carbide in Aluminium Metal Matrix Composites." Silicon 11, no. 6 (January 2, 2019): 2625–32. http://dx.doi.org/10.1007/s12633-018-0051-6.

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Ундалов, Ю. К., Е. И. Теруков, and И. Н. Трапезникова. "Изучение влияния временных характеристик модулированной DC-плазмы с (SiH-=SUB=-4-=/SUB=--Ar-O-=SUB=-2-=/SUB=-)-газовой фазой на рост ncl-Si в матрице a-SiO-=SUB=-x-=/SUB=-:H (C-=SUB=-O-=SUB=-2-=/SUB=--=/SUB=-=15.5 мол%)." Физика и техника полупроводников 52, no. 10 (2018): 1137. http://dx.doi.org/10.21883/ftp.2018.10.46453.8838.

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AbstractThe effect of various operating conditions of time-modulated DC (direct current) plasma on the formation of an amorphous a -SiO_ x :H matrix and silicon nanoclusters is studied using IR (infrared) and photoluminescence spectra. DC-plasma modulation consists in repeated ( n = 180) switching off and on of the magnetron magnet coil with various time combinations, t _off = 1, 2, 5, 10, 15 s and t _on = 5, 10, 15 s, respectively, at a fixed oxygen concentration ( $${{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}$$ = 15.5 mol %) in a (SiH_4 + Ar + О_2) gas mixture. The positive effect of self-induction on the formation of both the amorphous matrix and silicon nanoclusters is confirmed. The largest values of x in a -SiO_ x :H and photoluminescence intensity are observed in the case of the combination of prolonged plasma residence in the working state ( t _on = 10–15 s) and the maximum magnetic-field strength. The effect of t _off on the processes of the formation of both the a -SiO_ x :H matrix and silicon nanoclusters is also noted.

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Bresler, M. S., O. B. Gusev, E. I. Terukov, Yu K. Undalov, and N. A. Selyuzhenok. "Excitation of erbium in the heterogeneous nanocrystalline matrix of amorphous silicon." Physics of the Solid State 50, no. 9 (September 2008): 1731–35. http://dx.doi.org/10.1134/s106378340809028x.

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Jin Jang, Kyu Man Kim, Kyu Sik Cho, Byoung Kwon Choo, and G. Um. "An amorphous silicon triode rectifier switching device for active-matrix liquid-crystal display." IEEE Electron Device Letters 24, no. 2 (February 2003): 78–80. http://dx.doi.org/10.1109/led.2003.808838.

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Chen, Xiaobo, Wen Yang, Peizhi Yang, Fei Zhao, Yu Tang, and Jiabo Hao. "Microwave annealing enhances formation of silicon quantum dots in oxide matrix." Journal of Materials Science: Materials in Electronics 28, no. 7 (December 26, 2016): 5663–68. http://dx.doi.org/10.1007/s10854-016-6237-z.

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Lazarouk, S. K., A. A. Leshok, T. A. Kozlova, A. V. Dolbik, Le Dinh Vi, V. K. Ilkov, and V. A. Labunov. "3D Silicon Photonic Structures Based on Avalanche LED with Interconnections through Optical Interposer." International Journal of Nanoscience 18, no. 03n04 (April 2, 2019): 1940091. http://dx.doi.org/10.1142/s0219581x1940091x.

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Design and manufacturing technology of 3D silicon photonic structures with optical interconnections through microchannel vias interposers were developed. Silicon chips placed over each other were separated by the silicon microchannel vias interposer served as a light waveguide. Light emitting diodes and photodiodes were formed at the inner surfaces of silicon chips from nanostructured silicon clusters embedded into alumina matrix. The developed structure is characterized by the current conversion efficiency of 0.1% and can operate in the GHz frequency range.

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Hefter, J. "Digital image processing methods applied to the study of annealing time on semiconductor-metal eutectic composites." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 848–49. http://dx.doi.org/10.1017/s0424820100106302.

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Semiconductor-metal composites, formed by the eutectic solidification of silicon and a metal silicide have been under investigation for some time for a number of electronic device applications. This composite system is comprised of a silicon matrix containing extended metal-silicide rod-shaped structures aligned in parallel throughout the material. The average diameter of such a rod in a typical system is about 1 μm. Thus, characterization of the rod morphology by electron microscope methods is necessitated.The types of morphometric information that may be obtained from such microscopic studies coupled with image processing are (i) the area fraction of rods in the matrix, (ii) the average rod diameter, (iii) an average circularity (roundness), and (iv) the number density (Nd;rods/cm2). To acquire electron images of these materials, a digital image processing system (Tracor Northern 5500/5600) attached to a JEOL JXA-840 analytical SEM has been used.

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