Relevant bibliographies by topics / Silicon electronic matrix

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Silicon electronic matrix'

Author: Grafiati
Published: 4 June 2021
Last updated: 15 February 2022

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Journal articles on the topic "Silicon electronic matrix"

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Li, Jinghua, Enming Song, Chia-Han Chiang, et al. "Conductively coupled flexible silicon electronic systems for chronic neural electrophysiology." Proceedings of the National Academy of Sciences 115, no. 41 (2018): E9542—E9549. http://dx.doi.org/10.1073/pnas.1813187115.

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Materials and structures that enable long-term, intimate coupling of flexible electronic devices to biological systems are critically important to the development of advanced biomedical implants for biological research and for clinical medicine. By comparison with simple interfaces based on arrays of passive electrodes, the active electronics in such systems provide powerful and sometimes essential levels of functionality; they also demand long-lived, perfect biofluid barriers to prevent corrosive degradation of the active materials and electrical damage to the adjacent tissues. Recent reports describe strategies that enable relevant capabilities in flexible electronic systems, but only for capacitively coupled interfaces. Here, we introduce schemes that exploit patterns of highly doped silicon nanomembranes chemically bonded to thin, thermally grown layers of SiO2 as leakage-free, chronically stable, conductively coupled interfaces. The results can naturally support high-performance, flexible silicon electronic systems capable of amplified sensing and active matrix multiplexing in biopotential recording and in stimulation via Faradaic charge injection. Systematic in vitro studies highlight key considerations in the materials science and the electrical designs for high-fidelity, chronic operation. The results provide a versatile route to biointegrated forms of flexible electronics that can incorporate the most advanced silicon device technologies with broad applications in electrical interfaces to the brain and to other organ systems.
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Zimina, Anna, Stefan Eisebitt, Wolfgang Eberhardt, Johannes Heitmann, and Margit Zacharias. "Electronic structure and chemical environment of silicon nanoclusters embedded in a silicon dioxide matrix." Applied Physics Letters 88, no. 16 (2006): 163103. http://dx.doi.org/10.1063/1.2193810.

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Cho, Eun-Chel, Martin A. Green, Gavin Conibeer, et al. "Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells." Advances in OptoElectronics 2007 (August 28, 2007): 1–11. http://dx.doi.org/10.1155/2007/69578.

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We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.
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Nguyen, Ngoc Bich, Christian Dufour, and Sebastien Petit. "Atomic and electronic structure of silicon nanocrystals embedded in a silica matrix." Journal of Physics: Condensed Matter 20, no. 45 (2008): 455209. http://dx.doi.org/10.1088/0953-8984/20/45/455209.

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Belolipetskiy, A. V., O. B. Gusev, A. P. Dmitriev, E. I. Terukov, and I. N. Yassievich. "Trions in silicon nanocrystals in an amorphous hydrogenated silicon matrix." Semiconductors 48, no. 2 (2014): 235–38. http://dx.doi.org/10.1134/s1063782614020043.

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Mamichev, D. A., V. Yu Timoshenko, A. V. Zoteyev, et al. "Enhanced Raman scattering in grooved silicon matrix." physica status solidi (b) 246, no. 1 (2008): 173–76. http://dx.doi.org/10.1002/pssb.200844163.

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Velavan, K., and K. Palanikumar. "Effect of Silicon Carbide (SiC) on Stir Cast Aluminium Metal Matrix Hybrid Composites – A Review." Applied Mechanics and Materials 766-767 (June 2015): 293–300. http://dx.doi.org/10.4028/www.scientific.net/amm.766-767.293.

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Nowadays, the usage of metal matrix composites is increased in aero space, automotive, marine, electronic and manufacturing industries. Aluminum metal matrix composites have attained significant attention due to their good mechanical properties like strength, stiffness, abrasion and impact resistant, corrosion resistance. When compared to the conventional materials Aluminum Silicon Carbide (AlSiC) hybrid materials available in minimum cost. In the present study, based on the literature review, the individual Silicon Carbide with aluminum and combined influence of Silicon Carbide with graphite reinforcements Aluminium Metal Matrix Composites and Silicon Carbide with mica reinforcement Aluminum is studied. The monolithic composite materials are combined in different compositions by stir casting fabrication techniques, to produce composite materials. The literature review framework in this paper provides a clear overview of the usage of Graphite and Mica as a reinforcing agent in different composition matrices along with its distinctive performances.
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Zhang, Fei Hu, Kai Wang, Peng Qiang Fu, and Meng Nan Wu. "Research on Grinding of Silicon Particles Reinforced Aluminum Matrix Composites with High Volume Fraction." Advanced Materials Research 1017 (September 2014): 98–103. http://dx.doi.org/10.4028/www.scientific.net/amr.1017.98.

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With silicon particles reinforced aluminum matrix composites with high volume fraction becoming a new hotspot on research and application in the aerospace materials and electronic packaging materials, the machinability of this material needs to be explored. This paper reports research results obtained from the surface grinding experiment of silicon particles reinforced aluminum matrix composites using black silicon carbide wheel, green silicon carbide wheel, white fused alumina wheel and chromium alumina wheel. The issues discussed are grinding force, surface roughness, the comparison of different grinding wheels, the micro-morphology of the work piece. The results showed that the grinding force was related with the grinding depth and the grinding wheel material, the grinding force was increasing as the grinding depth growing. The surface roughness was between 0.29μm and 0.48μm using the silicon carbide wheel. The surface of the work piece had concaves caused by silicon particles shedding and grooves caused by the grains observed by the SEM and CLSM.
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Khatami, Mohammad Mahdi, Gautam Gaddemane, Maarten L. Van de Put, et al. "Electronic Transport Properties of Silicane Determined from First Principles." Materials 12, no. 18 (2019): 2935. http://dx.doi.org/10.3390/ma12182935.

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Silicane, a hydrogenated monolayer of hexagonal silicon, is a candidate material for future complementary metal-oxide-semiconductor technology. We determined the phonon-limited mobility and the velocity-field characteristics for electrons and holes in silicane from first principles, relying on density functional theory. Transport calculations were performed using a full-band Monte Carlo scheme. Scattering rates were determined from interpolated electron–phonon matrix elements determined from density functional perturbation theory. We found that the main source of scattering for electrons and holes was the ZA phonons. Different cut-off wavelengths ranging from 0.58 nm to 16 nm were used to study the possible suppression of the out-of-plane acoustic (ZA) phonons. The low-field mobility of electrons (holes) was obtained as 5 (10) cm2/(Vs) with a long wavelength ZA phonon cut-off of 16 nm. We showed that higher electron (hole) mobilities of 24 (101) cm2/(Vs) can be achieved with a cut-off wavelength of 4 nm, while completely suppressing ZA phonons results in an even higher electron (hole) mobility of 53 (109) cm2/(Vs). Velocity-field characteristics showed velocity saturation at 3 × 105 V/cm, and negative differential mobility was observed at larger fields. The silicane mobility was competitive with other two-dimensional materials, such as transition-metal dichalcogenides or phosphorene, predicted using similar full-band Monte Carlo calculations. Therefore, silicon in its most extremely scaled form remains a competitive material for future nanoscale transistor technology, provided scattering with out-of-plane acoustic phonons could be suppressed.
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Justo, João F., Cesar R. S. da Silva, I. Pereyra, and Lucy V. C. Assali. "Structural and Electronic Properties of Si1-xCxO2." Materials Science Forum 483-485 (May 2005): 577–80. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.577.

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There is growing interest in understanding the properties of SiC-SiO2 interfaces, which can be formed by oxidation of silicon carbide surfaces. Here, we used variable cell shape ab initio molecular dynamics to investigate the structural and electronic properties of crystalline phases of silicon oxycarbide which could appear within such interfaces. We find that carbonoxygen single bonds may remain stable inside a silicon oxide matrix. For the Si2CO6 compound, there are at least two crystalline phases, both having large bulk modulii and wide bandgaps.
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Dissertations / Theses on the topic "Silicon electronic matrix"

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Paxton, A. T. "Atomic and electronic structure of grain boundaries in silicon." Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379930.

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Safari, Saeed. "Impact of silicon carbide device technologies on matrix converter design and performance." Thesis, University of Nottingham, 2015. http://eprints.nottingham.ac.uk/28450/.

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The development of high power density power converters has become an important topic in power electronics because of increasing demand in transportation applications including marine, aviation and vehicle system. The possibility for greater power densities due to absence of a DC link is made matrix converter topologies more attractive for these applications. Additionally, with the emerging SiC device technology, the operating switching frequency and temperature of the converter can be potentially increased. The extended switching frequency and temperature range provide opportunities to further improve the power density of the power converters. The aim of this thesis is to understand how SiC devices are different from the conventional Si devices and the effect these differences have on the design and performance of a matrix converter. Specific gate drive circuits are designed and implemented to fully utilize the high speed switching capabilities of these emerging semiconductor devices. A method to evaluate the conduction and switching losses and performance of Si and SiC power devices in the matrix converter circuit is developed. The developed method is used to compare power losses of matrix converters designed with different Si and SiC devices for a range of operating temperatures and switching frequencies. A design procedure for matrix converter input filters is proposed to fulfil power quality standard requirements and maximize the filter power density. The impact of the switching frequency on the input filter volume has also been considered in this work. The output waveform distortion due to commutation time in high switching frequency SiC matrix converters is also investigated and a three-step current commutation strategy is used to minimize the problem. Finally the influence of parasitic inductance on the behaviour of SiC power MOSFET matrix converters is investigated to highlight the challenges of high speed power devices.
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Hunt, Richard K. "A transmission electron microscope characterization of sodium sulfate hot corrosion of silicon carbide fiber-reinforced lithium aluminosilicate glass-ceramic matrix composite." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1994. http://handle.dtic.mil/100.2/ADA286164.

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Kroely, Laurent. "Process and material challenges in the high rate deposition of microcrystalline silicon thin films and solar cells by Matrix Distributed Electron Cyclotron Resonance plasma." Phd thesis, Ecole Polytechnique X, 2010. http://pastel.archives-ouvertes.fr/pastel-00550241.

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High deposition rates on large areas are industrial needs for mass production of microcrystalline silicon (μc-Si:H) solar cells. This doctoral work aims at exploring the usefulness of Matrix Distributed Electron Cyclotron Resonance (MDECR) plasmas to process the intrinsic layer of μc-Si:H p-i-n solar cells at high rates. With the high dissociation of silane achieved in MDECR plasmas, deposition rates as high as 6nm/s and 2.8nm/s have been demonstrated in our lab for amorphous and microcrystalline silicon respectively, without hydrogen dilution. This technique is also promising because it can be easily scaled up on large areas, just by extending the matrix of elementary microwave applicators. This subject was a unique opportunity to cover the whole chain of this field of research : A new MDECR reactor has been specially designed and assembled during this project. Its maintenance and its improvement have been important technical challenges : for example, the addition of a load-lock enabled us to lower the oxygen concentration in our films by a factor of 10. The impact of the deposition parameters (e.g. the ion energy, the substrate temperature, different gas mixtures, the microwave power) has been explored in extensive parametric studies in order to optimize the material quality. Great efforts have been invested in the characterization of the films. Our strategy has been to develop a wide range of diagnostics (ellipsometry, Raman spectroscopy, SIMS, FTIR, XRD, electrical characterizations etc.). Finally, p-i-n cells have been processed with the selected interesting materials. The successive successful improvements in the material quality (e.g. diffusion lengths of holes parallel to the substrate as high as 250 nm) did unfortunately not result in high efficiency solar cells. Their limited performance is in particular due to a very poor response in the red part of the spectrum resulting in low current densities. Consequently, the potential sources of limitation of the reactor, the material and the device have been studied : e.g. the presence of “cracks” prone to post-oxidation in the highly crystallized materials and the risk of deterioration of the ZnO substrate or of the p-doped layer by a too high process temperature or by hydrogen diffusing from the plasma.
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Kremer, Geoffroy. "Installation d’un nouveau dispositif de photoémission résolue en angle et en spin, et étude des propriétés électroniques de matériaux artificiels aux propriétés remarquables." Thesis, Université de Lorraine, 2018. http://www.theses.fr/2018LORR0293/document.

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Dans ce travail de thèse, nous illustrons la pertinence de la technique de photoémission pour l'étude des propriétés électroniques des matériaux. Dans la première partie, nous détaillons le développement et la phase de tests d'un nouveau bâti expérimental composé d'une chambre d'épitaxie par jets moléculaires (MBE) ainsi que d'une chambre de photoémission résolue en angle et en spin (SR-ARPES), connecté au tube Daum à l'Institut Jean Lamour. Les hautes performances de ce nouveau dispositif sont d'une part évaluées par une série de mesures expérimentales sur un système connu de la littérature (état de Shockley à la surface de l'Au(111)), et d'autre part illustrées par l'analyse de matériaux originaux (isolants topologiques, effet Kondo moléculaire …). Les valeurs de résolution en énergie sont inférieures à 2 meV et 300 meV pour la photoémission utilisant les rayonnements UV (UPS) et X (XPS) respectivement. La résolution angulaire est quant à elle meilleure que 0,2° et la température minimale atteignable est de 8,7 K. Finalement, des premières mesures de SR-ARPES ont démontré la capacité de ce nouveau bâti à mesurer les détails les plus fins de la structure de bandes polarisée en spin, se rapprochant ainsi de l'état de l'art dans le domaine. Ce nouveau dispositif est donc pleinement opérationnel. La seconde partie est consacrée à l'étude d'un oxyde de silicium ultra-mince bidimensionnel (2D) à la surface d'un substrat monocristallin de Ru(0001). Nous étudions tous les stades de croissance en partant du substrat nu de Ru(0001) jusqu'à une bicouche cristalline de cet oxyde, par XPS haute résolution (rayonnement synchrotron) et photoémission résolue en angle (ARPES). Nous confirmons la structure atomique établie dans la littérature pour ce système à la monocouche, avec en particulier l'existence de deux types de liaisons inéquivalentes Si-O-Ru révélées par des mesures inédites d’XPS haute résolution au niveau de la raie de cœur de l'O1s. En outre, nos mesures ARPES mettent en évidence l'existence d'états dispersifs bidimensionnels propres à ce matériau 2D. Alors que la monocouche est fortement connectée au substrat de ruthénium (liaisons covalentes), la bicouche en est déconnectée (liaisons de van der Waals). Notre étude confirme l'existence d’une telle transition avec des signatures claires à la fois en XPS et en ARPES, démontrant notamment la disparition des liaisons Si-O-Ru. Nous démontrons également la robustesse de ce système, qui une fois cristallisé peut être remis à l'air sans modifications majeures de ses propriétés électroniques, lui donnant ainsi un fort potentiel de fonctionnalisation (par exemple au sein d'hétérostructures 2D complexes comme couche isolante). Finalement, dans une troisième partie nous nous intéressons aux aspects théoriques de la photoémission résolue en angle. Alors que la structure de bandes est périodique dans l'espace réciproque, ce n'est pas le cas de l'intensité de photoémission, qui peut présenter des variations complexes dépendant de nombreux paramètres. Ces aspects sont généralement mal compris par les expérimentateurs. Nous présentons ici un modèle simple récemment proposé qui s'inscrit dans une description en trois étapes du processus de photoémission, et qui permet d'évaluer les éléments de matrice à un électron. Ces éléments de matrice représentent l'ingrédient essentiel permettant de comprendre la répartition du poids spectral en photoémission. Nous démontrons que dans ce modèle ils sont proportionnels à la transformée de Fourier de l'état de Wannier du système considéré, ainsi qu'à un terme de polarisation contenant les effets géométriques inhérents à toute expérience de photoémission. Nous appliquons alors cette approche à des systèmes physiques comme le graphène, ou encore au cas de mesures de dichroïsme circulaire réalisées au niveau des états d et de l'état de Shockley d'un monocristal de Cu(111), mettant ainsi en évidence ses succès et ses limitations<br>In this work, we highlight the relevance of photoemission spectroscopy for investigating the electronic properties of materials. In the first part, we tackle the development and the test phase of a new experimental setup which is composed of a molecular beam epitaxy (MBE) and a spin and angle resolved photoemission (SR-ARPES) chambers, connected to the tube at the Institut Jean Lamour. The high performances of this new setup are evaluated. On one hand by measuring well known system from the litterature (Shockley state at the Au(111) surface) and on the other hand by studying materials with novel properties (topological insulators, molecular Kondo effect …). Energy resolution is better than 2 meV for UV photoemission (UPS) and 300 meV for X-ray photoemission (XPS). We also have an angular resolution better than 0.2° and a lowest sample temperature of 8.7 K. Finally, first SR-ARPES measurements demonstrate the ability of this new installation to measure finest details of the spin polarized band structure. In short, this new setup is fully operationnal. The second part is dedicated to the study of a two dimensionnal (2D) ultra thin silicon oxide at the surface of a cristalline Ru(0001) substrate. Both growth and electronic properties are studied by high resolution XPS and ARPES. We confirm the structural model accepted for the system in the litterature for the monolayer case. In particular we confirm the existence of two inequivalent Si-O-Ru bonds with unprecedented high resolution XPS measurements on the O1s core level. In addition, our ARPES measurements highlight new dispersives states with 2D character which are unambiguously attributed to this oxide. While the monolayer is strongly connected to the ruthenium substrate (covalent bonds), the bilayer is disconnected from this latter one (van der Waals). Our work confirms the existence of such a transition with unambiguous signatures both in XPS and ARPES, in particular with the breaking of Si-O-Ru bonds. We also demonstrate the robustness of this system which, after being cristallised, can go to atmosphere without fundamental modification of his electronic properties. That gives a lot of potential applications to this 2D cristalline oxide, which could play in the futur the role of a wide band gap insulator in 2D heterostructures. In the last part, we focus on the theoretical aspects of photoemission. While band structure is periodic in the reciprocal space, it is not the case of photoemission intensity which can depend on a lot of parameters. We are motivated by the fact that these considerations are generally not well understood by experimentalists. Here, we present a simple model recently proposed in the three step approach of the photoemission process. With this model we can evaluate the one-electron matrix elements which play a key role to understand the variations of spectral weight in photoemission. In this approach, one-electron matrix elements are proportionnal to both Fourier transform of the Wannier state of the system and to a polarization term. We apply this model to « real » systems, in particular to graphene and to circular dichroism measurements on Cu(111) sample, highlighting sucess and limitations of this model
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FERRO, WALDIR P. "Utilizacao da cinza da casca de arroz como carga em matriz de poliamida 6 submetida a radiacao ionizante." reponame:Repositório Institucional do IPEN, 2009. http://repositorio.ipen.br:8080/xmlui/handle/123456789/9384.

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Made available in DSpace on 2014-10-09T12:26:24Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:09:59Z (GMT). No. of bitstreams: 0<br>Tese (Doutoramento)<br>IPEN/T<br>Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP
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Ehrhardt, Fabien. "Elaboration et caractérisation de nanostructures de silicium dans une matrice d'oxynitrure de silicium : applications aux cellules solaires photovoltaïques." Thesis, Strasbourg, 2013. http://www.theses.fr/2013STRAD029/document.

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Les phénomènes quantiques des nanostructures peuvent être une opportunité pour le développement d’une nouvelle génération de cellules photovoltaïques. Ce travail décrit la synthèse et les caractérisations de nanoparticules de silicium dans une matrice d’oxynitrure de silicium. Il est possible d’obtenir des nanoparticules de silicium de diamètre compris entre 3 et 7 nm dans des matrices allant du nitrure de silicium à l’oxyde de silicium. Les propriétés des nanoparticules dépendent très fortement de la composition de la matrice. Afin d’accroître la conduction dans ces couches diélectriques, nous avons effectué un dopage électrique par implantation ionique. La localisation et la densité des ions implantés ont été observées par des techniques associées de microscopie électronique en transmission et de rayons X. Une augmentation de la conduction a été démontrée lors du dopage permettant d’observer un effet photovoltaïque sur une structure comportant des nanoparticules de silicium<br>Quantum effects in nanostructures exhibit properties that can be very useful for the development of a new generation of solar cells. We investigated the synthesis of silicon nanostructures in silicon oxynitride made by a plasma enhanced chemical vapour deposition technique. Thus, silicon nanoparticles of diameter between 3 and 7 nm were obtained in different matrix ranging from silicon oxide to silicon nitride. The properties highly depend on the composition of the matrix. We also study the incorporation of impurities in the films with the aim of increasing the electrical conductivity of the structure. This was done by implanting different ions in the structure followed by thermal annealing. We have investigated the position of the ion and its content in the composite by combining Transmission Electron Microscopy and X-ray diffraction. Finally, N+/P junctions were fabricated using highly doped films containing silicon nanoparticles and a photovoltaic effect was demonstrated
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Liu, Yang. "‘Tri-3D’ electron microscopy tomography by FIB, SEM and TEM : Application to polymer nanocomposites." Thesis, Lyon, INSA, 2013. http://www.theses.fr/2013ISAL0076/document.

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Ce travail a porté sur la caractérisation et la quantification en 3D de la répartition de charges de différents types (nanoparticules, nanotubes, etc.) dans des matrices polymères. Nous nous focalisons sur les techniques de tomographie en microscopie électronique. Une approche multiple en tomographie électronique a été réalisée : la tomographie en FIB/MEB (faisceau d’ions focalisé/microscope électronique à balayage), la tomographie en MEB et la tomographie en MET (microscope électronique en transmission). Les nanocomposites polymère sont généralement élaborés aux fins d’améliorer les propriétés physiques (mécanique, électrique, etc.) du matériau polymère constituant la matrice, grâce à une addition contrôlée de charges nanométriques. La caractérisation de tels matériaux, et l’établissement de corrélations précises entre la microstructure et les propriétés d’usage, requièrent une approche tri-dimensionnelle. En raison de la taille nanométrique des charges, la microscopie électronique est incontournable. Deux systèmes de nanocomposite polymère ont été étudiés par une approche multiple de tomographie électronique : P(BuA-stat-S)/MWNTs (copolymère statistique poly (styrène-co-acrylate de butyl) renforcé par des nanotubes de carbone multi-parois), et P(BuA-stat-MMA)/SiO2 (copolymère statistique poly(butyl acrylate-co-methyl methacrylate) renforcé par des nanoparticules de silice). Par combinaison de divers techniques, la caractérisation et la quantification des nanocharges ont été possibles. En particulier, la taille, la fraction volumique et la distribution des charges ont été mesurées. Cette étude a ainsi fourni des informations en 3D qui contribuent à mieux comprendre les propriétés des nanocomposites. Une attention particulière a été portée aux artefacts et causes d’erreur possibles durant l’étape de traitement 3D. Nous avons également essayé de comparer les différentes techniques utilisées du point de vue de leurs avantages et inconvénients respectifs, en dégageant des possibilités d’amélioration future<br>This work is focused on the characterization and quantification of the 3D distribution of different types of fillers (nanoparticles, nanotubes, etc.) in polymer matrices. We have essentially used tomography techniques in electron microscopy. Multiple approaches to electron tomography were performed: FIB-SEM (focused ion beam/scanning electron microscope) tomography, SEM tomography and TEM (transmission electron microscope) tomography. Polymer nanocomposites are basically synthesized in order to improve the physical properties (mechanical, electric, etc.) of the pure polymer constituting the matrix, by a controlled addition of fillers at the nanoscale. The characterization of such materials and the establishment of accurate correlations between the microstructure and the modified properties require a three-dimensional approach. According to the nanometric size of the fillers, electron microscopy techniques are needed. Two systems of polymer nanocomposites have been studied by multiple electron tomography approaches: P(BuA-stat-S)/MWNTs (statistical copolymer poly(styrene-co-butyl acrylate) reinforced by multi-walled carbon nanotubes) and P(BuA-stat-MMA)/SiO2 (statistical copolymer poly(butyl acrylate-co-methyl methacrylate) reinforced by silica nanoparticles). By combining various techniques, the characterization and the quantification of nanofillers were possible. In particular, statistics about size, distribution and volume fraction of the fillers were measured. This study has then provided 3D information, which contributes to a better understanding of properties of the nanocomposites. Attention has been paid to analyze carefully original data, and artifacts and causes of errors or inaccuracy were considered in the 3D treatments. We also attempted to compare benefits and drawbacks of all techniques employed in this study, and perspectives for future improvements have been proposed
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Kervran, Yannick. "Cartographie d'un champ de pression induit par l'occlusion dentaire." Thesis, Rennes 1, 2016. http://www.theses.fr/2016REN1S077.

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Le diagnostic de l'occlusion dentaire reste actuellement un défi majeur pour les chirurgiens-dentistes. Des outils dédiés existent, comme le papier à articuler et le T-Scan®, mais sont limités pour diverses raisons. L'objectif de cette thèse est alors de développer un nouvel outil sous forme de matrice de capteurs de pression sur substrat flexible alliant les avantages des outils nommés précédemment, à savoir un produit électronique, informatisé et de faible épaisseur pour ne pas être intrusif. Nous avons choisi une technologie piézorésistive et l'utilisation de jauges de contrainte en silicium microcristallin. Ce matériau est déposé à basse température (&lt; 200°C) directement sur substrat Kapton® par PECVD (Plasma Enhanced Chemical Vapor Deposition) dans une perspective de faible coût. Ces jauges ont d'abord été caractérisées mécaniquement et électriquement lors de tests de courbure. Les facteurs de jauge longitudinaux et transversaux du silicium microcristallin ont été étudiés afin de maîtriser son comportement sous déformation. Les dispositifs restent fonctionnels jusqu'à des contraintes de 0,6 %, à partir de laquelle des dégradations apparaissent. Ces valeurs de contraintes permettent d'atteindre des rayons de courbure de l'ordre du millimètre pour des substrats de 25 µm d'épaisseur. Deux types de matrices ont ensuite été développées : une première de 800 jauges pour l'étude de la surface occlusale d'une dent puis une seconde de 6400 jauges pour l'étude d'une moitié de mâchoire. Dans les deux cas, des corrélations intéressantes entre le papier à articuler et nos réponses électriques ont été observées lors de caractérisations en conditions « semi-réelles » à l'aide d'un articulateur dentaire. Ces deux prototypes ont ainsi permis une preuve de concept fonctionnelle de l'objectif visé en utilisant des jauges en silicium microcristallin<br>Dental occlusion diagnosis is still a major challenge for dentists. A couple of tools are dedicated to occlusal analysis, such as articulating papers and the T-Scan® system, but they are limited for various reasons. That's why, the goal of this thesis is to develop a novel system consisting in pressure sensor arrays on flexible substrates combining the positive aspects of both previously cited tools: an electronic and computerized system, on a very thin non-invasive flexible substrate. We chose a piezoresistive technology based on microcrystalline silicon strain gauges and 25-µm- or 50-µm-thick Kapton® substrates. Microcrystalline silicon is deposited directly on plastic at low temperature (&lt; 200°C) using PECVD technique (Plasma Enhanced Chemical Vapor Deposition) in a cost-effective solution perspective. Strain gauges have firstly been characterized using bending tests. Longitudinal and transversal gauge factors have been studied in order to understand the behavior of our deposited materials under bending. Those gauges remained functional until strains up to 0.6 % and degradations appeared for higher values. These values correspond to bending radius on the order of 1 mm for 25-µm-thick substrates. Then, those gauges have been integrated in arrays with two different designs: one was an 800-element array to study the occlusal surface of one tooth, and the second was a 6400-element array to study the occlusal surface of a hemiarcade. Those prototypes have showed interesting correlations between articulating paper marks and our electrical responses during characterizations using a dental articulator to simulate a human jaw. Thus, we have developed in this work a proof-of-concept of a flexible strain sensor using microcrystalline silicon dedicated to dental occlusion diagnosis
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Stragier, Anne-Sophie. "Elaboration et caractérisation de structures Silicium-sur-Isolant réalisées par la technologie Smart Cut™ avec une couche fragile enterrée en silicium poreux." Thesis, Lyon, INSA, 2011. http://www.theses.fr/2011ISAL0108.

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Au vu des limitations rencontrées par la miniaturisation des circuits microélectroniques, l’augmentation de performances des systèmes repose largement aujourd’hui sur la fabrication d’empilements de couches minces complexes et innovants pour offrir davantage de compacité et de flexibilité. L’intérêt grandissant pour la réalisation de structures innovantes temporaires, i.e. permettant de réaliser des circuits sur les deux faces d’un même film, nous a mené à évaluer les potentialités d’une technologie combinant le transfert de films minces monocristallins, i.e. la technologie Smart Cut™, et un procédé de de porosification partielle du silicium afin de mettre au point une technologie de double report de film monocristallin. En ce sens, des substrats de silicium monocristallin ont été partiellement porosifiés par anodisation électrochimique. La mise en œuvre de traitements de substrats partiellement poreux a nécessité l’emploi de techniques de caractérisation variées pour dresser une fiche d’identité des couches minces poreuses après anodisation et évaluer l’évolution des propriétés de ces couches en fonction des différents traitements appliqués. Les propriétés chimiques, structurales et mécaniques des couches de Si poreux ont ainsi été étudiées via l’utilisation de différentes techniques de caractérisation (XPS-SIMS, AFM-MEB-XRD, nanoindentation, technique d’insertion de lame, etc.). Ces études ont permis d’appréhender et de décrire les mécanismes physiques mis au jeu au cours des différents traitements et de déterminer les caractéristiques {porosité, épaisseur} optimales des couches poreuses compatibles avec les séquences de la technologie proposée. La technologie Smart Cut™ a ainsi été appliquée à des substrats partiellement porosifiés menant à la fabrication réussie d’une structure temporaire de type Silicium-sur-Isolant avec une couche de silicium poreux enterrée. Ces structures temporaires ont été « démontées » dans un second temps par collage polymère ou collage direct et insertion de lame menant au second report de film mince monocristallin par rupture au sein de la couche porosifiée et donc fragile. Les structures fabriquées ont été caractérisées pour vérifier leur intégrité et leurs stabilités chimique et mécanique. Les propriétés cristallines du film mince de Si monocristallin, reporté en deux temps, ont été vérifiées confirmant ainsi la compatibilité des structures fabriquées avec des applications microélectroniques telles que les applications de type « Back-Side Imager » nécessitant une implémentation de composants sur les deux faces du film. Ainsi une technologie prometteuse et performante a pu être élaborée permettant le double report de films minces monocristallins et à fort potentiel pour des applications variées comme les imageurs visibles ou le photovoltaïque<br>As scaling of microelectronic devices is confronted from now to fundamental limits, improving microelectronic systems performances is largely based nowadays on complex and innovative stack realization to offer more compaction and flexibility to structures. Growing interest in the fabrication of innovative temporary structures, allowing for example double sided layer processing, lead us to investigate the capability to combine one technology of thin single crystalline layer transfer, i.e. the Smart Cut™ technology, and partial porosification of silicon substrate in order to develop an original double layer transfer technology of thin single crystalline silicon film. To this purpose, single crystalline silicon substrates were first partially porosified by electrochemical anodization. Application of suitable treatments of porous silicon layer has required the use of several characterization methods to identify intrinsic porous silicon properties after anodization and to verify their evolution as function of different applied treatments. Chemical, structural and mechanical properties of porous silicon layers were studied by using different characterization techniques (XPS-SIMS, AFM-MEB-XRD, nanoindentation, razor blade insertion, etc.). Such studies allowed comprehending and describing physical mechanisms occurring during each applied technological steps and well determining appropriated {porosity, thickness} parameters of porous silicon layer with the developed technological process flow. The Smart Cut™ technology was successfully applied to partially porosified silicon substrates leading to the fabrication of temporary SOI-like structures with a weak embedded porous Si layer. Such structures were then “dismantled” thanks to a second polymer or direct bonding and razor blade insertion to produce a mechanical rupture through the fragile embedded porous silicon layer and to get the second thin silicon film transfer. Each fabricated structure was characterized step by step to check its integrity and its chemical and mechanical stabilities. Crystalline properties of the double transferred silicon layer were verified demonstrating the compatibility of such structures with microelectronic applications such as “Back-Side Imagers” needing double-sided layer processing. Eventually, a promising and efficient technology has been developed to allow the double transfer of thin single crystalline silicon layer which presents a high potential for various applications such as visible imagers or photovoltaic systems
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Books on the topic "Silicon electronic matrix"

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Singh, M. Microstructural characterization of reaction-formed silicon carbide ceramics. National Aeronautics and Space Administration, 1995.

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Randall, Michael S. Processing, characterization and modelling of borosilicate glass matrix-particulate silicon nitride composites, containing controlled additions of porosity, for use in high speed electronic packaging. 1993.

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A, Leonhardt T., and United States. National Aeronautics and Space Administration., eds. Microstructural characterization of reaction-formed silicon carbide ceramics. National Aeronautics and Space Administration, 1995.

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Book chapters on the topic "Silicon electronic matrix"

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TEREKHOV, V. A., D. S. USOLTSEVA, S. Yu TURISHCHEV, et al. "ELECTRONIC AND ATOMIC STRUCTURE OF SILICON NANOCRYSTALS IN ALUMINUM MATRIX AND WITHOUT IT." In Physics, Chemistry and Applications of Nanostructures. WORLD SCIENTIFIC, 2015. http://dx.doi.org/10.1142/9789814696524_0032.

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Koshevoi, Veniamin, Anton Belorus, Ilya Pleshanov, et al. "Study of Composite Structures Based on a Porous Silicon Matrix and Nanoparticles Ag/Zno Used as Non-Invasive Highly Sensitive Biosensor Devices." In Composite Materials. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.92850.

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In this work composite structures based on a porous silicon were obtained and studied. Porous matrices were formed by electrochemical etching in aqueous solutions of hydrofluoric acid. Based on the obtained substrates, por-silicon (Si)/silver (Ag) and por-Si/zinc oxide (ZnO) composite structures were formed. These composites were functionalized by various methods (electro (E)-, thermo (T)-, electrothermal exposure) as a result of which the structures were modified. When studying the samples by scanning electron microscopy (SEM), it was concluded that silver nanoparticles actively diffused into the pores under these technological modes of functionalization. The por-Si/Ag and por-Si/ZnO composite structures were also studied using the following methods: infrared (IR) spectroscopy and Raman ultrasoft X-ray emission spectroscopy. Also, the photoluminescent characteristics of the samples were studied. Based on the obtained results, it was concluded that functionalization methods actively change the phase composition of structures and the optical properties of composites.
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Cavosie, Aaron J., and Luigi Folco. "Shock-twinned zircon in ejecta from the 45-m-diameter Kamil crater in southern Egypt." In Large Meteorite Impacts and Planetary Evolution VI. Geological Society of America, 2021. http://dx.doi.org/10.1130/2021.2550(17).

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ABSTRACT With an age of less than ~5000 yr and a diameter of 45 m, Kamil crater in Egypt is one of the youngest and smallest terrestrial impact craters known to date. Abundant evidence of shock-deformed sandstone has been reported from Kamil crater, including shatter cones, vesicular impact glass, high-pressure polymorphs of silica and car bon, planar deformation features (PDFs) and planar fractures (PFs) in quartz, dissociated zircon, melt veins, and intergranular melt, giving rise to a range of estimated shock pressures from ~20 to ~60 GPa. Here, we investigated shocked zircon from Kamil crater through characterization of microstructures in a centimeter-sized clast of shocked nonporous sandstone ejecta, previously described as containing quartz grains with PDFs and PFs, coesite, stishovite, diamond, and lechatelierite. Orientation analysis by electron backscatter diffraction (EBSD) showed that the quartz arenite consists of damaged detrital quartz grains surrounded by a matrix of either comminuted quartz or intergranular melt. Individual quartz grains are pervasively fractured (abundant PFs and PDFs); apparent isotropic crushing resulted in uniformly and highly dispersed orientation clusters on pole figures. Zircon grains are not abundant; however, four of 19 grains analyzed by EBSD contained {112} deformation twin lamellae, with individual lamellae ranging in length from 1 to 2 µm. Lengths of twin lamellae in Kamil zircon grains are anomalously short compared to those report-ed in shocked zircon from other impact structures, where individual lamellae are tens of micrometers long. Previous empirical studies have suggested that {112} twin lamellae in zircon form at ~20 GPa in non-porous target rocks, a finding supported by their coexistence, in some impactites, with high-pressure phases such as reidite. The only available experimental constraint, by diamond anvil cell, found {112} twins in zircon powder quenched at 20 GPa. The presence of coesite, stishovite, lechatelierite, and shocked quartz with PDFs in the studied sample is consistent with empirically derived pressure estimates of ~20 GPa for {112} twin formation in zircon in the ejecta sample from Kamil crater. Kamil thus represents the smallest and youngest impact structure where shock-twinned zircon has been reported. Given the apparent efficiency of {112} twin formation (21% of grains), shock-twinned zircon is here shown to provide a robust and readily identifiable record of shock deformation in a relatively common mineral at one of the smallest known terrestrial impact craters.
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Conference papers on the topic "Silicon electronic matrix"

1

Shiraishi, Masashi. "Silicon Spintronics for Electronic Devices." In 2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD). IEEE, 2021. http://dx.doi.org/10.23919/am-fpd52126.2021.9499211.

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Efremov, M. D., S. A. Arzhannikova, G. N. Kamaev, et al. "Electronic transport through silicon nanocrystals embedded in SiO2 matrix." In SPIE Proceedings, edited by Kamil A. Valiev and Alexander A. Orlikovsky. SPIE, 2006. http://dx.doi.org/10.1117/12.677164.

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NOVIKOV, V. A., A. N. KHOLOD, A. V. NOVIKOV, and A. B. FILONOV. "ELECTRONIC PROPERTIES AND OVERLAP INTEGRAL MATRIX CALCULATION ACCURACY FOR SILICON-BASED STRUCTURES." In Reviews and Short Notes to Nanomeeting '97. WORLD SCIENTIFIC, 1997. http://dx.doi.org/10.1142/9789814503938_0025.

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Chaplygin, Yury A., Mikhail G. Putrya, V. V. Paramonov, and T. V. Osipova. "Development of a Technological Route for the Silicon Microneedles Matrix Formation." In 2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2020. http://dx.doi.org/10.1109/eiconrus49466.2020.9038950.

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Bruce, Richard H., Shinji Morozumi, Michael G. Hack, Alan Lewis, and I.-Wei Wu. "Polysilicon and amorphous silicon technology comparison for active-matrix liquid-crystal displays." In SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, edited by Elliott Schlam and Marko M. Slusarczuk. SPIE, 1992. http://dx.doi.org/10.1117/12.60342.

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Mallem, Kumar, Sehyeon Kim, Sanchari Chowdary, et al. "Influence of molybdenum oxide thickness, electronic structure, and work function on the performance of hole selective silicon heterojunction solar cells." In 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD). IEEE, 2019. http://dx.doi.org/10.23919/am-fpd.2019.8830558.

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Belorus, Anton O., Yulia M. Spivak, Andrei I. Pastukhov, Vyacheslav A. Moshnikov, and Veniamin L. Koshevoi. "Study of Luminescent and Morphological Properties of Porous Silicon Matrix Obtained by Photoelectrochemical Etching." In 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2019. http://dx.doi.org/10.1109/eiconrus.2019.8657184.

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Chen, Jun, R. C. Jaeger, and J. C. Suhling. "Piezoresistive Theory for 4H Silicon Carbide Stress Sensors on Four-Degree Off-Axis Wafers." In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/ipack2019-6461.

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Abstract Piezoresistive stress sensors have been shown to be a powerful tool for experimental evaluation of die stress distributions. Silicon Carbide (SiC) wide bandgap semiconductors are promising materials for development of high temperature power electronics. In the past, the analysis and design of stress sensors on silicon carbide have assumed that the wafer surface is aligned with the crystallographic axes. However, 4H silicon carbide wafers are produced with a four-degree off-axis cut to ensure high-quality homoepitaxial growth, so that the tilted wafer surface does not perfectly coincide with the fundamental crystallographic axis. Thus, the prior “on-axis” theory is an approximation, and errors in piezoresistive theory caused by such tilted wafer plane need to be discussed. These errors can affect both the results from calibration experiments as well as the stresses extracted during application of sensor rosettes. This paper discusses the theory and extraction of piezoresistive coefficients for 4H-SiC silicon carbide materials in the presence of off-axis starting wafers. Coordinate transformations for the piezoresistive coefficients are reviewed, the required direction cosines between the new rotated axes and the ideal axes are discussed, and the 6 × 6 matrix of piezoresistive coefficients (π-matrix) for the on-axis and off-axis cases are calculated. Many of the elements of the ideal on-axis π-matrixes are zero. In contrast, the off-axis is completely filled with non-zero values indicating additional coupling, particularly among the shear coefficients. Examples of the overall impact of these new terms on calibration and stress measurement are discussed.
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Shimabukuro, Randy L., Stephen D. Russell, Bruce W. Offord, Mark A. Handschy, and Terry Stuart. "Ultra-thin silicon-on-sapphire for high-density active-matrix liquid crystal display (AMLCD) drivers." In IS&T/SPIE 1994 International Symposium on Electronic Imaging: Science and Technology, edited by Peter S. Friedman. SPIE, 1994. http://dx.doi.org/10.1117/12.172132.

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Minnullin, Ramil, Dmitriy Korolev, Aleksandr Sapegin, and Mikhail Barabanenkov. "CALCULATION OF THE REFLECTION SPECTRA OF Ge-Sb-Te DIFFRACTION GRATING USING THE TAUC–LORENTZ DISPERSION MODEL." In Mathematical modeling in materials science of electronic component. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1529.mmmsec-2020/92-95.

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In this paper reflection spectra in the near infrared range are calculated for the diffraction grating of Ge-Sb-Te alloy on a silicon-on-insulator waveguide with use of Tauc–Lorentz dispersion model and Matrix Riccati Equation method.
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Reports on the topic "Silicon electronic matrix"

1

Babic, Davorin, Raphael Tsu, and Richard F. Greene. Ground-State Energies of One- and Two-Electron Silicon Dots in an Amorphous Silicon Dioxide Matrix. Defense Technical Information Center, 1992. http://dx.doi.org/10.21236/ada271027.

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