Relevant bibliographies by topics / Silicon electronic matrix

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Silicon electronic matrix'

Author: Grafiati
Published: 4 June 2021
Last updated: 15 February 2022

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Journal articles on the topic "Silicon electronic matrix"

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Li, Jinghua, Enming Song, Chia-Han Chiang, et al. "Conductively coupled flexible silicon electronic systems for chronic neural electrophysiology." Proceedings of the National Academy of Sciences 115, no. 41 (2018): E9542—E9549. http://dx.doi.org/10.1073/pnas.1813187115.

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Materials and structures that enable long-term, intimate coupling of flexible electronic devices to biological systems are critically important to the development of advanced biomedical implants for biological research and for clinical medicine. By comparison with simple interfaces based on arrays of passive electrodes, the active electronics in such systems provide powerful and sometimes essential levels of functionality; they also demand long-lived, perfect biofluid barriers to prevent corrosive degradation of the active materials and electrical damage to the adjacent tissues. Recent reports
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Zimina, Anna, Stefan Eisebitt, Wolfgang Eberhardt, Johannes Heitmann, and Margit Zacharias. "Electronic structure and chemical environment of silicon nanoclusters embedded in a silicon dioxide matrix." Applied Physics Letters 88, no. 16 (2006): 163103. http://dx.doi.org/10.1063/1.2193810.

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Cho, Eun-Chel, Martin A. Green, Gavin Conibeer, et al. "Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells." Advances in OptoElectronics 2007 (August 28, 2007): 1–11. http://dx.doi.org/10.1155/2007/69578.

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We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation
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Nguyen, Ngoc Bich, Christian Dufour, and Sebastien Petit. "Atomic and electronic structure of silicon nanocrystals embedded in a silica matrix." Journal of Physics: Condensed Matter 20, no. 45 (2008): 455209. http://dx.doi.org/10.1088/0953-8984/20/45/455209.

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Belolipetskiy, A. V., O. B. Gusev, A. P. Dmitriev, E. I. Terukov, and I. N. Yassievich. "Trions in silicon nanocrystals in an amorphous hydrogenated silicon matrix." Semiconductors 48, no. 2 (2014): 235–38. http://dx.doi.org/10.1134/s1063782614020043.

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Mamichev, D. A., V. Yu Timoshenko, A. V. Zoteyev, et al. "Enhanced Raman scattering in grooved silicon matrix." physica status solidi (b) 246, no. 1 (2008): 173–76. http://dx.doi.org/10.1002/pssb.200844163.

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Velavan, K., and K. Palanikumar. "Effect of Silicon Carbide (SiC) on Stir Cast Aluminium Metal Matrix Hybrid Composites – A Review." Applied Mechanics and Materials 766-767 (June 2015): 293–300. http://dx.doi.org/10.4028/www.scientific.net/amm.766-767.293.

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Nowadays, the usage of metal matrix composites is increased in aero space, automotive, marine, electronic and manufacturing industries. Aluminum metal matrix composites have attained significant attention due to their good mechanical properties like strength, stiffness, abrasion and impact resistant, corrosion resistance. When compared to the conventional materials Aluminum Silicon Carbide (AlSiC) hybrid materials available in minimum cost. In the present study, based on the literature review, the individual Silicon Carbide with aluminum and combined influence of Silicon Carbide with graphite
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Zhang, Fei Hu, Kai Wang, Peng Qiang Fu, and Meng Nan Wu. "Research on Grinding of Silicon Particles Reinforced Aluminum Matrix Composites with High Volume Fraction." Advanced Materials Research 1017 (September 2014): 98–103. http://dx.doi.org/10.4028/www.scientific.net/amr.1017.98.

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With silicon particles reinforced aluminum matrix composites with high volume fraction becoming a new hotspot on research and application in the aerospace materials and electronic packaging materials, the machinability of this material needs to be explored. This paper reports research results obtained from the surface grinding experiment of silicon particles reinforced aluminum matrix composites using black silicon carbide wheel, green silicon carbide wheel, white fused alumina wheel and chromium alumina wheel. The issues discussed are grinding force, surface roughness, the comparison of diffe
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Khatami, Mohammad Mahdi, Gautam Gaddemane, Maarten L. Van de Put, et al. "Electronic Transport Properties of Silicane Determined from First Principles." Materials 12, no. 18 (2019): 2935. http://dx.doi.org/10.3390/ma12182935.

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Silicane, a hydrogenated monolayer of hexagonal silicon, is a candidate material for future complementary metal-oxide-semiconductor technology. We determined the phonon-limited mobility and the velocity-field characteristics for electrons and holes in silicane from first principles, relying on density functional theory. Transport calculations were performed using a full-band Monte Carlo scheme. Scattering rates were determined from interpolated electron–phonon matrix elements determined from density functional perturbation theory. We found that the main source of scattering for electrons and h
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Justo, João F., Cesar R. S. da Silva, I. Pereyra, and Lucy V. C. Assali. "Structural and Electronic Properties of Si1-xCxO2." Materials Science Forum 483-485 (May 2005): 577–80. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.577.

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There is growing interest in understanding the properties of SiC-SiO2 interfaces, which can be formed by oxidation of silicon carbide surfaces. Here, we used variable cell shape ab initio molecular dynamics to investigate the structural and electronic properties of crystalline phases of silicon oxycarbide which could appear within such interfaces. We find that carbonoxygen single bonds may remain stable inside a silicon oxide matrix. For the Si2CO6 compound, there are at least two crystalline phases, both having large bulk modulii and wide bandgaps.
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Dissertations / Theses on the topic "Silicon electronic matrix"

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Paxton, A. T. "Atomic and electronic structure of grain boundaries in silicon." Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379930.

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Safari, Saeed. "Impact of silicon carbide device technologies on matrix converter design and performance." Thesis, University of Nottingham, 2015. http://eprints.nottingham.ac.uk/28450/.

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The development of high power density power converters has become an important topic in power electronics because of increasing demand in transportation applications including marine, aviation and vehicle system. The possibility for greater power densities due to absence of a DC link is made matrix converter topologies more attractive for these applications. Additionally, with the emerging SiC device technology, the operating switching frequency and temperature of the converter can be potentially increased. The extended switching frequency and temperature range provide opportunities to further
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Hunt, Richard K. "A transmission electron microscope characterization of sodium sulfate hot corrosion of silicon carbide fiber-reinforced lithium aluminosilicate glass-ceramic matrix composite." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1994. http://handle.dtic.mil/100.2/ADA286164.

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Kroely, Laurent. "Process and material challenges in the high rate deposition of microcrystalline silicon thin films and solar cells by Matrix Distributed Electron Cyclotron Resonance plasma." Phd thesis, Ecole Polytechnique X, 2010. http://pastel.archives-ouvertes.fr/pastel-00550241.

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High deposition rates on large areas are industrial needs for mass production of microcrystalline silicon (μc-Si:H) solar cells. This doctoral work aims at exploring the usefulness of Matrix Distributed Electron Cyclotron Resonance (MDECR) plasmas to process the intrinsic layer of μc-Si:H p-i-n solar cells at high rates. With the high dissociation of silane achieved in MDECR plasmas, deposition rates as high as 6nm/s and 2.8nm/s have been demonstrated in our lab for amorphous and microcrystalline silicon respectively, without hydrogen dilution. This technique is also promising because it can b
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Kremer, Geoffroy. "Installation d’un nouveau dispositif de photoémission résolue en angle et en spin, et étude des propriétés électroniques de matériaux artificiels aux propriétés remarquables." Thesis, Université de Lorraine, 2018. http://www.theses.fr/2018LORR0293/document.

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Dans ce travail de thèse, nous illustrons la pertinence de la technique de photoémission pour l'étude des propriétés électroniques des matériaux. Dans la première partie, nous détaillons le développement et la phase de tests d'un nouveau bâti expérimental composé d'une chambre d'épitaxie par jets moléculaires (MBE) ainsi que d'une chambre de photoémission résolue en angle et en spin (SR-ARPES), connecté au tube Daum à l'Institut Jean Lamour. Les hautes performances de ce nouveau dispositif sont d'une part évaluées par une série de mesures expérimentales sur un système connu de la littérature (
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FERRO, WALDIR P. "Utilizacao da cinza da casca de arroz como carga em matriz de poliamida 6 submetida a radiacao ionizante." reponame:Repositório Institucional do IPEN, 2009. http://repositorio.ipen.br:8080/xmlui/handle/123456789/9384.

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Made available in DSpace on 2014-10-09T12:26:24Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:09:59Z (GMT). No. of bitstreams: 0<br>Tese (Doutoramento)<br>IPEN/T<br>Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP
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Ehrhardt, Fabien. "Elaboration et caractérisation de nanostructures de silicium dans une matrice d'oxynitrure de silicium : applications aux cellules solaires photovoltaïques." Thesis, Strasbourg, 2013. http://www.theses.fr/2013STRAD029/document.

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Les phénomènes quantiques des nanostructures peuvent être une opportunité pour le développement d’une nouvelle génération de cellules photovoltaïques. Ce travail décrit la synthèse et les caractérisations de nanoparticules de silicium dans une matrice d’oxynitrure de silicium. Il est possible d’obtenir des nanoparticules de silicium de diamètre compris entre 3 et 7 nm dans des matrices allant du nitrure de silicium à l’oxyde de silicium. Les propriétés des nanoparticules dépendent très fortement de la composition de la matrice. Afin d’accroître la conduction dans ces couches diélectriques, nou
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Liu, Yang. "‘Tri-3D’ electron microscopy tomography by FIB, SEM and TEM : Application to polymer nanocomposites." Thesis, Lyon, INSA, 2013. http://www.theses.fr/2013ISAL0076/document.

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Ce travail a porté sur la caractérisation et la quantification en 3D de la répartition de charges de différents types (nanoparticules, nanotubes, etc.) dans des matrices polymères. Nous nous focalisons sur les techniques de tomographie en microscopie électronique. Une approche multiple en tomographie électronique a été réalisée : la tomographie en FIB/MEB (faisceau d’ions focalisé/microscope électronique à balayage), la tomographie en MEB et la tomographie en MET (microscope électronique en transmission). Les nanocomposites polymère sont généralement élaborés aux fins d’améliorer les propriété
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Kervran, Yannick. "Cartographie d'un champ de pression induit par l'occlusion dentaire." Thesis, Rennes 1, 2016. http://www.theses.fr/2016REN1S077.

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Le diagnostic de l'occlusion dentaire reste actuellement un défi majeur pour les chirurgiens-dentistes. Des outils dédiés existent, comme le papier à articuler et le T-Scan®, mais sont limités pour diverses raisons. L'objectif de cette thèse est alors de développer un nouvel outil sous forme de matrice de capteurs de pression sur substrat flexible alliant les avantages des outils nommés précédemment, à savoir un produit électronique, informatisé et de faible épaisseur pour ne pas être intrusif. Nous avons choisi une technologie piézorésistive et l'utilisation de jauges de contrainte en siliciu
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Stragier, Anne-Sophie. "Elaboration et caractérisation de structures Silicium-sur-Isolant réalisées par la technologie Smart Cut™ avec une couche fragile enterrée en silicium poreux." Thesis, Lyon, INSA, 2011. http://www.theses.fr/2011ISAL0108.

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Au vu des limitations rencontrées par la miniaturisation des circuits microélectroniques, l’augmentation de performances des systèmes repose largement aujourd’hui sur la fabrication d’empilements de couches minces complexes et innovants pour offrir davantage de compacité et de flexibilité. L’intérêt grandissant pour la réalisation de structures innovantes temporaires, i.e. permettant de réaliser des circuits sur les deux faces d’un même film, nous a mené à évaluer les potentialités d’une technologie combinant le transfert de films minces monocristallins, i.e. la technologie Smart Cut™, et un p
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Books on the topic "Silicon electronic matrix"

1

Singh, M. Microstructural characterization of reaction-formed silicon carbide ceramics. National Aeronautics and Space Administration, 1995.

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Randall, Michael S. Processing, characterization and modelling of borosilicate glass matrix-particulate silicon nitride composites, containing controlled additions of porosity, for use in high speed electronic packaging. 1993.

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A, Leonhardt T., and United States. National Aeronautics and Space Administration., eds. Microstructural characterization of reaction-formed silicon carbide ceramics. National Aeronautics and Space Administration, 1995.

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Book chapters on the topic "Silicon electronic matrix"

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TEREKHOV, V. A., D. S. USOLTSEVA, S. Yu TURISHCHEV, et al. "ELECTRONIC AND ATOMIC STRUCTURE OF SILICON NANOCRYSTALS IN ALUMINUM MATRIX AND WITHOUT IT." In Physics, Chemistry and Applications of Nanostructures. WORLD SCIENTIFIC, 2015. http://dx.doi.org/10.1142/9789814696524_0032.

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Koshevoi, Veniamin, Anton Belorus, Ilya Pleshanov, et al. "Study of Composite Structures Based on a Porous Silicon Matrix and Nanoparticles Ag/Zno Used as Non-Invasive Highly Sensitive Biosensor Devices." In Composite Materials. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.92850.

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In this work composite structures based on a porous silicon were obtained and studied. Porous matrices were formed by electrochemical etching in aqueous solutions of hydrofluoric acid. Based on the obtained substrates, por-silicon (Si)/silver (Ag) and por-Si/zinc oxide (ZnO) composite structures were formed. These composites were functionalized by various methods (electro (E)-, thermo (T)-, electrothermal exposure) as a result of which the structures were modified. When studying the samples by scanning electron microscopy (SEM), it was concluded that silver nanoparticles actively diffused into the pores under these technological modes of functionalization. The por-Si/Ag and por-Si/ZnO composite structures were also studied using the following methods: infrared (IR) spectroscopy and Raman ultrasoft X-ray emission spectroscopy. Also, the photoluminescent characteristics of the samples were studied. Based on the obtained results, it was concluded that functionalization methods actively change the phase composition of structures and the optical properties of composites.
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Cavosie, Aaron J., and Luigi Folco. "Shock-twinned zircon in ejecta from the 45-m-diameter Kamil crater in southern Egypt." In Large Meteorite Impacts and Planetary Evolution VI. Geological Society of America, 2021. http://dx.doi.org/10.1130/2021.2550(17).

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ABSTRACT With an age of less than ~5000 yr and a diameter of 45 m, Kamil crater in Egypt is one of the youngest and smallest terrestrial impact craters known to date. Abundant evidence of shock-deformed sandstone has been reported from Kamil crater, including shatter cones, vesicular impact glass, high-pressure polymorphs of silica and car bon, planar deformation features (PDFs) and planar fractures (PFs) in quartz, dissociated zircon, melt veins, and intergranular melt, giving rise to a range of estimated shock pressures from ~20 to ~60 GPa. Here, we investigated shocked zircon from Kamil crater through characterization of microstructures in a centimeter-sized clast of shocked nonporous sandstone ejecta, previously described as containing quartz grains with PDFs and PFs, coesite, stishovite, diamond, and lechatelierite. Orientation analysis by electron backscatter diffraction (EBSD) showed that the quartz arenite consists of damaged detrital quartz grains surrounded by a matrix of either comminuted quartz or intergranular melt. Individual quartz grains are pervasively fractured (abundant PFs and PDFs); apparent isotropic crushing resulted in uniformly and highly dispersed orientation clusters on pole figures. Zircon grains are not abundant; however, four of 19 grains analyzed by EBSD contained {112} deformation twin lamellae, with individual lamellae ranging in length from 1 to 2 µm. Lengths of twin lamellae in Kamil zircon grains are anomalously short compared to those report-ed in shocked zircon from other impact structures, where individual lamellae are tens of micrometers long. Previous empirical studies have suggested that {112} twin lamellae in zircon form at ~20 GPa in non-porous target rocks, a finding supported by their coexistence, in some impactites, with high-pressure phases such as reidite. The only available experimental constraint, by diamond anvil cell, found {112} twins in zircon powder quenched at 20 GPa. The presence of coesite, stishovite, lechatelierite, and shocked quartz with PDFs in the studied sample is consistent with empirically derived pressure estimates of ~20 GPa for {112} twin formation in zircon in the ejecta sample from Kamil crater. Kamil thus represents the smallest and youngest impact structure where shock-twinned zircon has been reported. Given the apparent efficiency of {112} twin formation (21% of grains), shock-twinned zircon is here shown to provide a robust and readily identifiable record of shock deformation in a relatively common mineral at one of the smallest known terrestrial impact craters.
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Conference papers on the topic "Silicon electronic matrix"

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Shiraishi, Masashi. "Silicon Spintronics for Electronic Devices." In 2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD). IEEE, 2021. http://dx.doi.org/10.23919/am-fpd52126.2021.9499211.

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Efremov, M. D., S. A. Arzhannikova, G. N. Kamaev, et al. "Electronic transport through silicon nanocrystals embedded in SiO2 matrix." In SPIE Proceedings, edited by Kamil A. Valiev and Alexander A. Orlikovsky. SPIE, 2006. http://dx.doi.org/10.1117/12.677164.

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NOVIKOV, V. A., A. N. KHOLOD, A. V. NOVIKOV, and A. B. FILONOV. "ELECTRONIC PROPERTIES AND OVERLAP INTEGRAL MATRIX CALCULATION ACCURACY FOR SILICON-BASED STRUCTURES." In Reviews and Short Notes to Nanomeeting '97. WORLD SCIENTIFIC, 1997. http://dx.doi.org/10.1142/9789814503938_0025.

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Chaplygin, Yury A., Mikhail G. Putrya, V. V. Paramonov, and T. V. Osipova. "Development of a Technological Route for the Silicon Microneedles Matrix Formation." In 2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2020. http://dx.doi.org/10.1109/eiconrus49466.2020.9038950.

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Bruce, Richard H., Shinji Morozumi, Michael G. Hack, Alan Lewis, and I.-Wei Wu. "Polysilicon and amorphous silicon technology comparison for active-matrix liquid-crystal displays." In SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, edited by Elliott Schlam and Marko M. Slusarczuk. SPIE, 1992. http://dx.doi.org/10.1117/12.60342.

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Mallem, Kumar, Sehyeon Kim, Sanchari Chowdary, et al. "Influence of molybdenum oxide thickness, electronic structure, and work function on the performance of hole selective silicon heterojunction solar cells." In 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD). IEEE, 2019. http://dx.doi.org/10.23919/am-fpd.2019.8830558.

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Belorus, Anton O., Yulia M. Spivak, Andrei I. Pastukhov, Vyacheslav A. Moshnikov, and Veniamin L. Koshevoi. "Study of Luminescent and Morphological Properties of Porous Silicon Matrix Obtained by Photoelectrochemical Etching." In 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2019. http://dx.doi.org/10.1109/eiconrus.2019.8657184.

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Chen, Jun, R. C. Jaeger, and J. C. Suhling. "Piezoresistive Theory for 4H Silicon Carbide Stress Sensors on Four-Degree Off-Axis Wafers." In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/ipack2019-6461.

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Abstract Piezoresistive stress sensors have been shown to be a powerful tool for experimental evaluation of die stress distributions. Silicon Carbide (SiC) wide bandgap semiconductors are promising materials for development of high temperature power electronics. In the past, the analysis and design of stress sensors on silicon carbide have assumed that the wafer surface is aligned with the crystallographic axes. However, 4H silicon carbide wafers are produced with a four-degree off-axis cut to ensure high-quality homoepitaxial growth, so that the tilted wafer surface does not perfectly coincid
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Shimabukuro, Randy L., Stephen D. Russell, Bruce W. Offord, Mark A. Handschy, and Terry Stuart. "Ultra-thin silicon-on-sapphire for high-density active-matrix liquid crystal display (AMLCD) drivers." In IS&T/SPIE 1994 International Symposium on Electronic Imaging: Science and Technology, edited by Peter S. Friedman. SPIE, 1994. http://dx.doi.org/10.1117/12.172132.

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Minnullin, Ramil, Dmitriy Korolev, Aleksandr Sapegin, and Mikhail Barabanenkov. "CALCULATION OF THE REFLECTION SPECTRA OF Ge-Sb-Te DIFFRACTION GRATING USING THE TAUC–LORENTZ DISPERSION MODEL." In Mathematical modeling in materials science of electronic component. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1529.mmmsec-2020/92-95.

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In this paper reflection spectra in the near infrared range are calculated for the diffraction grating of Ge-Sb-Te alloy on a silicon-on-insulator waveguide with use of Tauc–Lorentz dispersion model and Matrix Riccati Equation method.
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Reports on the topic "Silicon electronic matrix"

1

Babic, Davorin, Raphael Tsu, and Richard F. Greene. Ground-State Energies of One- and Two-Electron Silicon Dots in an Amorphous Silicon Dioxide Matrix. Defense Technical Information Center, 1992. http://dx.doi.org/10.21236/ada271027.

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