Relevant bibliographies by topics / Silicon chromium

Academic literature on the topic 'Silicon chromium'

Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "Silicon chromium"

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Wen, Jing, Wei Hua, QingKun Gong, and Bing Wang. "Exploring the Electro-Thermal Properties of Chromium Silicon Monoxide Films and Its Possible Storage Applications." Journal of Nanoelectronics and Optoelectronics 17, no. 3 (March 1, 2022): 489–94. http://dx.doi.org/10.1166/jno.2022.3224.

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Chromium silicon monoxide has received considerable interest due to its applications as resistor. To deeply explore the key factors that determine the electro-thermal properties of chromium silicon monoxide films, a variety of chromium silicon monoxide films were prepared on glass and silicon substrates for different deposition conditions. The electrical resistivities of the chromium silicon monoxide films were found to strongly depend on the film thickness, atomic proportion of silicon oxide, and annealing temperature, and reducing the atomic proportion of silicon oxide can effectively suppress its resistivity variation for different temperature. In this case, choosing smaller atomic proportion of silicon oxide can greatly enhance the life stability of the chromium silicon oxide films. Based on the measured data, a chromium silicon monoxide film with the optimized thickness, electrical resistivity, and thermal conductivity, are fabricated, and its influence on the physical performances of the electrical memory is also assessed.
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Okamoto, H. "Cr-Si (Chromium-Silicon)." Journal of Phase Equilibria 22, no. 5 (October 2001): 593. http://dx.doi.org/10.1007/s11669-001-0089-8.

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Okamoto, H. "Cr-Si (Chromium-Silicon)." Journal of Phase Equilibria 18, no. 2 (April 1997): 222. http://dx.doi.org/10.1007/bf02665714.

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Okamoto, H. "Cr-Si (Chromium-Silicon)." Journal of Phase Equilibria 22, no. 5 (October 2001): 593. http://dx.doi.org/10.1007/s12385-001-0089-8.

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Cofer, C. G., and J. A. Lewis. "Chromium catalysed silicon nitridation." Journal of Materials Science 29, no. 22 (November 1994): 5880–86. http://dx.doi.org/10.1007/bf00366871.

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Komanduri, R., N. Umehara, and M. Raghunandan. "On the Possibility of Chemo-Mechanical Action in Magnetic Float Polishing of Silicon Nitride." Journal of Tribology 118, no. 4 (October 1, 1996): 721–27. http://dx.doi.org/10.1115/1.2831600.

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Chromium oxide abrasive has been reported in the literature to provide efficient chemo-mechanical polishing action for silicon nitride ceramic. Since aluminum oxide and chromium oxide abrasives are nearly of the same hardness, magnetic float polishing tests were conducted on silicon nitride balls with these two abrasives to investigate mechanical versus chemo-mechanical aspects of polishing. Tests results show higher removal rates and smoother surface texture (with fewer pits) with chromium oxide abrasive compared to aluminum oxide abrasive. Formation of pits due to brittle fracture seems to be the more predominant mode of material removal with aluminum oxide abrasive than with chromium oxide abrasive. While there may be some mechanical action (abrasion) with chromium oxide abrasive initially, subsequent removal is believed to be due to chemo-mechanical action. This could be due to degeneration of the chromium oxide abrasive (both mechanical and chemical) during polishing. Various hypotheses for the material removal mechanism (both mechanical and chemo-mechanical) were considered. Based on that, the higher removal rates and smoother surface texture on the silicon nitride balls with chromium oxide abrasive in semifinish polishing is interpreted here as possibly due to chemo-mechanical action. Higher chemical stability of aluminum oxide abrasive (compared to chromium oxide abrasive) and the known role of chromium oxide as a catalyst for the oxidation of silicon nitride are some of the reasons attributed for this action.
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Aleksandrov, A. A., V. Ya Dashevskii, and L. I. Leont’ev. "THERMODYNAMICS OF OXYGEN SOLUTIONS IN SILICON-CONTAINING Fe – Co – Cr MELTS." Izvestiya Visshikh Uchebnykh Zavedenii. Chernaya Metallurgiya = Izvestiya. Ferrous Metallurgy 61, no. 8 (October 24, 2018): 657–61. http://dx.doi.org/10.17073/0368-0797-2018-8-657-661.

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Thermodynamic analysis of the effect of silicon on the solubility of oxygen in Fe – Co – Cr melts has been carried out at 1873 K. Silicon has a sufficiently high deoxidizing ability in Fe – Co – Cr melts. Silicon at low contents practically does not affect the concentration of oxygen in the melt, which is determined by the chromium content. With a higher content of silicon after changing the mechanism of interaction process of chromium and silicon with oxygen, when silicon already determines the solubility of oxygen in the melt, the oxygen concentration decreases.
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Vlasova, M., M. Kakazey, J. G. Gonzales-Rodriguez, G. Dominguez, Momcilo Ristic, O. Scherbina, T. Tomila, L. Isaeva, I. I. Timofeeva, and A. Bukov. "Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system." Science of Sintering 34, no. 3 (2002): 231–40. http://dx.doi.org/10.2298/sos0203231v.

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The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa) is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.
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Aleksandrov, A. A., and V. Ya Dashevskii. "EFFECT OF SILICON ON THE OXYGEN SOLUBILITY IN Ni – Co – Cr MELTS." Izvestiya. Ferrous Metallurgy 62, no. 3 (June 20, 2019): 241–45. http://dx.doi.org/10.17073/0368-0797-2019-3-241-245.

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Thermodynamic analysis of the effect of silicon on the solubility of oxygen in Ni – Co – Cr melts has been carried out at 1873 K. Silicon at low contents practically does not affect the concentration of oxygen in Ni – Co – Cr melts, which is determined by the chromium content. With a higher content of silicon after changing the interaction mechanism of chromium and silicon with oxygen, when silicon already determines the solubility of oxygen in the melt, the oxygen concentration decreases. However, the deoxidizing ability of silicon at elevated contents in Ni – Co – Cr melts is much lower than in Ni – Co melts.
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Royer, Laurent, Stéphane Mathieu, Christophe Liebaut, and Pierre Steinmetz. "Oxidation and Nitridation of Pure Chromium at Elevated Temperature in Synthetic Air – Effect of Silicon Addition." Materials Science Forum 595-598 (September 2008): 1047–55. http://dx.doi.org/10.4028/www.scientific.net/msf.595-598.1047.

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The oxidation and nitridation of pure chromium and of chromium alloys containing 0.5 to 5at% silicon was investigated at 1300°C in several atmospheres. Global methods like thermogravimetry were associated to thickness measurements and microstructural characterisation to evaluate oxidation mechanisms. The contribution of nitridation to weight gain during high temperature exposure is discussed, examining nitride volume fraction. Experiments demonstrate that the presence of nitrogen in the substrate is always consecutive to a breakdown of the oxide layer and does not result from diffusion through the Cr2O3 layer. Silicon, when present in chromium solid solution, slows down the oxidation kinetics and limits the progression of nitrogen in the chromium lattice and at grain boundaries. The absence of the Cr2N layer beneath the metal/oxide interface does not benefit to the adherence of the oxide scale. Oxidation of silicon in chromium leads to the formation of discontinuous particles of SiO2 at the metal/oxide interface, at the grain boundaries and dispersed in the bulk in the alloy sub-surface.
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Dissertations / Theses on the topic "Silicon chromium"

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Comina, Paul John. "New methodology in organo-chromium/-silicon chemistry." Thesis, University of Oxford, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.320585.

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Kovsarian, Abdolnabi. "Properties of chromium silicide on hydrogenated amorphous silicon." Thesis, University of Surrey, 1998. http://epubs.surrey.ac.uk/844566/.

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The interaction between thin films of sputter deposited chromium and hydrogenated amorphous silicon has been studied. Following deposition of the chromium films at room temperature the films were annealed over a range of times and temperatures below 350° C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional to the annealing time. The activation energy for the process was 0.55+/-0.05 eV and the silicide growth rate prefactor ≈ 10-12 cm2/s. The formation process of the silicide was very reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline CrSi2 for all films formed at temperatures ≤300° C. The specific resistivity of the amorphous CrSi2 was ≈600 muO.cm and independent of annealing temperature. It was shown that the a-CrSi2 was physically and chemically stable. We have shown that a Schottky barrier is formed between a-CrSi2 and a-Si:H with a barrier height of ≈ 0.9 eV and an ideality factor ≈1.1. The current transport is controlled by diffusion or thermionic emission mechanism at low voltages but it becomes space charge limited at higher voltages. Applying a reverse or forward bias to the Cr/a-Si:H system during annealing does not change the physical and electrical properties of the interface and the behaviour is controlled only by the heat treatment history of the sample. In the Mo/a-Si:H system a very thin and stable amorphous MoSi2 layer is formed after annealing below 300° C and the formation of MoSi2 follows the diffusion law. The activation energy of silicidation is ≈ 0.4 eV and the prefactor is ≈ 10-14cm2/s. The specific resistivity of a-MoSi2 is ≈ 1000 muO.cm. In the Co/a-Si:H the composition of the resulting silicide is close to CoSi below 300° C with a resistivity of ≈ 120 muO.cm. The barrier height of the MoSi2/a-Si:H and CoSi/a-Si:H systems is ≈ 0.9 eV and confirms that the barrier height is controlled by interface states.
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Pitcher, Robert John. "Optically induced oscillations of chromium coated silicon microstructures." Thesis, University of Surrey, 1991. http://epubs.surrey.ac.uk/844610/.

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This thesis reports the effects of chromium layers on the vibrational properties of silicon microengineered structures designed as pressure sensors. Both excitation and interrogation have been achieved by optical means. Particular attention has been paid to the optically induced vibrational amplitude, Q factor and phase angle between the motion of the resonator and the incident pulsed laser light used to excite the resonator. Two silicon structures have been investigated; bridges fabricated at Birmingham University and extensively characterised by researchers at Strathclyde University, and devices fabricated at STC Technology Ltd. in Harlow. For both structures the addition of chromium layers onto the surface has had the effect of increasing the value of the amplitude divided by the Q factor. This increase occurs after a layer of chromium of about 15nm thickness has already been deposited onto the silicon. It has also been found that the value of the Q factor of the resonators has decreased with the addition of chromium layers. The phase angle of the motion has also been found to be sensitive to the thickness of the chromium layer. This angle has been observed to increase from approximately zero for bare silicon to about 40° for a few hundred Angstroms, returning towards zero phase for chromium layers of comparable thickness to the silicon thickness.
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Filonenko, Olga. "Structural Investigations of Thin Chromium Disilicide Films on Silicon." Doctoral thesis, Universitätsbibliothek Chemnitz, 2005. http://nbn-resolving.de/urn:nbn:de:swb:ch1-200500426.

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In der vorliegenden Arbeit wurden Röntgentechniken benutzt um die Struktur von dünnen (etwa 40 nm) CrSi2-Schichten, die unter UHV-Bedingungen mittels reaktive Koabscheidung und template-Verfahren auf Si(001) hergestellt wurden, zu charakterisieren. Die Ergebnisse wurden mit TEM-, SEM- und RBS-Untersuchungen korreliert und ergänzt. Die XRD-Analysen zeigen, dass die beiden Abscheideverfahren immer zur Bildung der CrSi2-Phase führen, wobei die Kristallite mit einer bevorzugten Orientierungsbeziehung CrSi2(001)[100] || Si(001)[110] wachsen. Im ersten Teil der Arbeit wurde die Cr-Si-Koabscheidung benutzt um die Prozessparameter zu bestimmen, die zum Wachstum epitaktischer Schichten führen können. Die Strukturuntersuchungen zeigen, dass nur bei einer Substrattemperatur von 700°C nahezu geschlossene Schichten mit Kristalliten, welche lateral eine Größe bis zu 300 nm haben und neben der bevorzugten noch andere Orientierungen zum Substrat aufweisen, entstehen. Als zweite Herstellungsmethode wurde das template-Verfahren verwendet, wo die Cr-Si-Koabscheidung auf ein vorher in-situ präpariertes ultradünnes CrSi2-template erfolgt. Die Morphologie und die Stärke der bevorzugten Orientierung der CrSi2-Schichten sind stark von der template-Dicke abhängig. Die Abscheidung auf CrSi2-templates, welche aus einer Cr-Schicht mit nominaler Dicker von 0,35 nm bis 0,52 nm entstehen, führt zum Wachstum weitgehend geschlossener, homogener und epitaktischer CrSi2-Schichten. Ein Modell, das den Einfluss der template-Dicke auf die Qualität der CrSi2-Schichten erklären kann, wird vorgeschlagen.
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Jensen, Mallory Ann. "Detecting and gettering chromium impurities in photovoltaic crystalline silicon." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/100122.

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Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2015.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 61-67).
Photovoltaic (PV) modules provide a source of renewable electricity by harnessing solar energy. Currently, crystalline silicon dominates the PV market with an approximate market share of 90% and record solar cell efficiencies greater than 20%. However, the PV market must decrease the cost to the consumer to maintain growth and meet global electricity demands. Increasing the solar-to-electricity conversion efficiency is one of the most significant cost levers. Transition metal impurities can degrade silicon wafer-based solar cell efficiencies at concentrations as low as 1010 cm3 . By removing interstitial metals from the bulk and/or collecting interstitial metals at heterogeneous nucleation sites, phosphorous diffusion gettering renders them less detrimental in the final solar cell. While they exist for iron, kinetics process simulation tools do not yet exist for chromium, which has higher capture cross-sections for minority carriers and is therefore more detrimental in both p- and n-type materials. In this thesis, I employ synchrotron-based X-ray fluorescence microscopy to study chromium (Cr) distributions in multicrystalline silicon in as-grown material and after two phosphorous diffusion profiles. I complement quantified precipitate size and spatial distribution with interstitial Cr concentration and minority carrier lifetime measurements to provide insight into chromium gettering kinetics and offer suggestions for minimizing the device impacts of chromium. The data presented in this thesis can be used in development of kinetics process simulation tools for chromium gettering. Finally, I describe a new technique for detecting low concentrations of impurities in n- and p-type silicon. The development of high-performance silicon materials, including n-type, necessitates more sensitive impurity detection techniques, capable of measuring interstitial contaminations below 1010 cm-3. I propose the development of a free-carrier absorption-based technique that incorporates a temperature stage. By measuring injection-dependent lifetimes at a wide range of sample temperatures, the identifying parameters of lifetime-limiting defects can be deduced.
by Mallory Ann Jensen.
S.M.
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Hystad, Madeleine. "The distribution and impact of chromium impurities in compensated SoG-silicon." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for kjemi, 2009. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-6847.

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Harte, Sean Paul. "Surface EXAFS studies of chromium and titanium upon #alpha#-quartz (0001) surfaces." Thesis, University of Liverpool, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.263901.

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In this thesis two studies of reactive metal adsorption upon a low index single crystal silicon dioxide surface are presented in addition to a study of sulphur adsorption upon a low index single crystal nickel surface. Chromium growth upon the a-quartz Si02(0001) (J84xJ84) Rll 0 surface is studied at three coverages, 0.25±O.08 ML, 0.5±O.16 ML and 1.0±0.33 ML, using surface extended x-ray absorption fine structure (SEXAFS). SEXAFS measurements, from the chromium K-edge, recorded at both grazing and normal incidence show that chromium growth proceeds via the formation of mesoscopic particles with a body centred cubic (b.c.c.) like structure having an average nearest neighbour Cr-Cr distance of 2.36±O.03 A. This represents a contraction of 5.6 % from the bulk b.c.c. lattice spacing of 2.49 A. There is no evidence of a surface reaction between chromium and the surface oxygen. SEXAFS was used to study titanium reactional growth on a-quartz (0001) (J84xJ84) Rll 0 and (lx1). Three nominal coverages were studied, 0.25±O.08 ML, 0.5±O.16 ML and 1.0±O.33 ML. Both normal and grazing incidence SEXAFS data were recorded and show the formation of a spatially extensive region in which an interfacial reaction has occurred between surface oxygen and adsorbate titanium atoms. Coupled with this is the formation of subnanometre titanium clusters. The metal oxide has nearest neighbour Ti-O distances close to those of both the anatase and rutile forms of titania with the metallic titanium clusters having a Ti-Ti distance within experimental error that of bulk hexagonal close packed (h.c.p.) titanium, 2.89 A. A re-examination of the surface geometry of Ni(1l0)c(2x2)S using SEXAFS has been performed. Data out to an electron wavevector of 9 A-I are analysed with a new code to assess the influence of multiple scattering. The first shell S-Ni distance is determined to be 2.20±O.02 A with the next nearest neighbour distance being 2.29±O.02 A, giving a top-layer Ni expansion of 14±3% relative to the bulk. The influence of multiple scattering does not significantly alter these values from earlier studies.
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Harper, Mark Andrew. "Codeposition of chromium and silicon onto iron-base alloys via pack cementation /." The Ohio State University, 1992. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487778663285375.

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Morgan, Andrew. "JOINING AND HERMETIC SEALING OF SILICON CARBIDE USING IRON, CHROMIUM, AND ALUMINUM ALLOYS." VCU Scholars Compass, 2014. http://scholarscompass.vcu.edu/etd/3529.

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Silicon Carbide (SiC) is increasingly gaining attention as a potential fuel cladding material, on account of its favorable thermo-mechanical and neutronic properties. The major limitations of such a cladding is currently associated with joining and hermetic sealing. The work presented here investigated the use of Al, Cr and Fe metals and a specialized alloy (FeCrAl) to achieve hermetic sealing of SiC tubes as well as a joining technology of SiC. Major part of solving this issue requires addressing joining of ceramic and metallic components, which are largely dissimilar in both thermal and mechanical properties. Preliminary experiments to bond SiC with FeCrAl resulted in adverse separation partially attributed to the differences in thermal expansion mismatch. To alleviate these problems, thin and thick coatings of the metals and alloys were applied to SiC. Qualitative microstructural characterization of the final product indicated satisfactory bonding between the materials.
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Lim, Jeongyoun. "Effects of chromium and silicon on corrosion of iron alloys in lead-bismuth eutectic." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/41288.

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Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Nuclear Science and Engineering, 2006.
Includes bibliographical references.
The high power densities and temperatures expected for next generation nuclear applications, including power generation and transmutation systems, will require new types of heat transport systems to be economic. Present interest in heavy liquid metal coolants, especially in lead and lead-bismuth eutectic, originates from such requirements as increased heat removal capacity and enhanced safety features. However, corrosion of structural metals represents a major limiting factor in developing advanced liquid Pb-alloy coolant technology. In fact, the development of advanced structural and cladding alloys that are resistant to corrosion over a wide range of oxygen potentials in this environment would represent the enabling technology for these systems. The goal of this research was to develop a class of Fe-Cr Si alloys that are resistant to corrosion in Pb and Pb alloys at temperatures of 6000C or higher. As a necessary part of this development effort, an additional goal was to further develop the fundamental understandings of the mechanisms by which corrosion protection is achieved. A series of alloys based on the Fe-Cr-Si system were proposed as potential candidates for this application. These alloys were then produced and evaluated. The results of this evaluation verified the hypothesis that an Fe alloys with suitable levels of Cr (>12 wt%) and Si (> 2.5 wt%) will be protected by either a tenacious oxide film (over a wide range of oxygen potentials above the formation potential for Cr and Si oxides) or by a low solubility surface region (at low oxygen potentials) Experimental results obtained from model alloys after lead-bismuth eutectic exposure at 6000C demonstrated the film formation process.
(cont.) The hypothesis that Si addition would promote the formation of a diffusion barrier was confirmed by the actual reduction of oxide thickness over time. The Si effect was magnified by the addition of Cr to the system. Based on a kinetic data assessment on the experimental results of Fe-Si and Fe-Cr-Si alloys, the synergetic alloying effect of Cr and Si was revealed. An improved understanding on the kinetic process and its dependence on the alloying elements has been achieved.
by Jeongyoun Lim.
Sc.D.
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Books on the topic "Silicon chromium"

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Duczmal, Wojciech. Badania reakcji soli chromu (II) ze związkami chlorokrzemowymi w środowisku dimetyloformamidu. Poznań: Wydawn. Nauk. Uniwersytetu im. Adama Mickiewicza w Poznaniu, 1988.

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Institute of Medicine (U.S.). Panel on Micronutrients. and Institute of Medicine (U.S.). Food and Nutrition Board., eds. DRI, dietary reference intakes for vitamin A, vitamin K, arsenic, boron, chromium, copper, iodine, iron, manganese, molybdenum, nickel, silicon, vanadium, and zinc. Washington, D.C: National Academy Press, 2001.

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Falconer, David A. Relative elemental abundance and heating constraints determined for the solar corona from SERTS measurements. Greenbelt, Md: National Aeronautics and Space Administration, Goddard Space Flight Center, 1994.

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Falconer, David A. Relative elemental abundance and heating constraints determined for the solar corona from SERTS measurements. Greenbelt, Md: National Aeronautics and Space Administration, Goddard Space Flight Center, 1994.

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Falcomer, David A. Relative elemental abundance and heating constraints determined for the solar corona from SERTS measurements. Greenbelt, Md: National Aeronautics and Space Administration, Goddard Space Flight Center, 1994.

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Center, Langley Research, ed. Oxidation and emittance studies of coated Mo-Re. Hampton, Va: National Aeronautics and Space Administration, Langley Research Center, 1997.

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Dietary Reference Intakes for Vitamin A, Vitamin K, Arsenic, Boron, Chromium, Copper, Iodine, Iron, Manganese, Molybdenum, Nickel, Silicon, Vanadium, and Zinc. Washington, D.C.: National Academies Press, 2001. http://dx.doi.org/10.17226/10026.

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Dietary Reference Intakes for Vitamin a, Vitamin K, Arsenic, Boron, Chromium, Copper, Iodine, Iron, Manganese, Molybdenum, Nickel, Silicon, Vanadium, and Zinc. National Academies Press, 2002.

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Intakes, the Standing Committee on the Scientific Evaluation of Dietary Reference, Panel on Micronutrients, and Subcommittees on Upper Reference Levels of Nutrients and of Interpretation and Use of Dietary Reference Intakes. Dietary Reference Intakes for Vitamin A, Vitamin K, Arsenic, Boron, Chromium, Copper, Iodine, Iron, Manganese, Molybdenum, Nickel, Silicon, Vanadium, and Zinc (Dietary Reference Intakes). National Academies Press, 2002.

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the Standing Committee on the Scientific Evaluation of Dietary Reference Intakes, Panel on Micronutrients, and Subcommittees on Upper Reference Levels of Nutrients and of Interpretation and Use of Dietary Reference Intakes. Dietary Reference Intakes for Vitamin A, Vitamin K, Arsenic, Boron, Chromium, Copper, Iodine, Iron, Manganese, Molybdenum, Nickel, Silicon, Vanadium, and Zinc (Dietary Reference Intakes). National Academies Press, 2002.

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Book chapters on the topic "Silicon chromium"

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Lebrun, Nathalie, Pierre Perrot, An Serbruyns, and Jean-Claude Tedenac. "Carbon – Chromium – Silicon." In Refractory metal systems, 330–47. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-02700-0_22.

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Pandelaers, Lieven, and Rainer Schmid-Fetzer. "Chromium – Molybdenum – Silicon." In Refractory metal systems, 182–91. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-00771-2_14.

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Cornish, Lesley, Damian M. Cupid, Joachim Gröbner, and Annelies Malfliet. "Chromium – Niobium – Silicon." In Refractory metal systems, 210–21. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-00771-2_17.

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Predel, B. "Cr - Si (Chromium - Silicon)." In B - Ba … Cu - Zr, 238–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-540-44756-6_174.

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Yan, Wei, Wei Wang, Yiyin Shan, Ke Yang, and Wei Sha. "Silicon-Bearing High-Chromium Heat-Resistant Steels." In 9-12Cr Heat-Resistant Steels, 45–64. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-14839-7_3.

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Isaev, Makhmudhodzha, Abdumalik Gaibov, Abdigani Eshkulov, and Pulat Saidachmetov. "Formation of Nanosized Films of Chromium Silicides on Silicon Surface." In XIV International Scientific Conference “INTERAGROMASH 2021”, 1031–41. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-80946-1_93.

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Polignano, Maria Luisa, Daniele Caputo, F. Cerutti, M. Cottini, L. Farini, and J. Reffle. "Chromium Contamination in Silicon: Detection and Impact on Oxide Performances." In Solid State Phenomena, 227–32. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-06-x.227.

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Ellison, Alan, J. A. Moulijn, B. Scheffer, A. Brown, B. Herbert, P. Humphrey, G. Diakun, P. Worthington, F. E. Mabbs, and D. Collison. "Characterization of Chromium-Silica Catalysts." In Advances in Polyolefins, 111–41. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4757-9095-5_11.

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Larson, D. C., D. M. Hetrick, C. Y. Fu, S. J. Epperson, and R. E. MacFarlane. "Accurate Calculations of Neutron Kerma and Damage from EDNF/B-VI Evaluations for Silicon, Chromium, Iron and Nickel, and Comparison with ENDF/B-V Results." In Proceedings of the Seventh ASTM-Euratom Symposium on Reactor Dosimetry, 393–402. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2781-3_46.

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Liu, Zhen, and Boping Liu. "Computational Studies of Chromium/Silica Catalysts." In Handbook of Transition Metal Polymerization Catalysts, 131–60. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2018. http://dx.doi.org/10.1002/9781119242277.ch5.

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Conference papers on the topic "Silicon chromium"

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Jensen, Mallory Ann, Jasmin Hofstetter, David P. Fenning, Ashley E. Morishige, Gianluca Coletti, Barry Lai, and Tonio Buonassisi. "The distribution of chromium in multicrystalline silicon." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925547.

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Habenicht, Holger, Martin C. Schubert, Gianluca Coletti, and Wilhelm Warta. "Photoluminescence imaging of chromium in crystalline silicon." In 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5616097.

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Asher, S. E., J. P. Kalejs, and B. Bathey. "SIMS analysis of chromium gettering in crystalline silicon." In Photovoltaic advanced research and development project. AIP, 1992. http://dx.doi.org/10.1063/1.42898.

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Lin, Wenjie, Weiliang Wu, Zongtao Liu, Lun Cai, Zhirong Yao, Qi Xie, Lanxiang Meng, Zongcun Liang, and Hui Shen. "Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8547752.

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BAGOLINI, A., B. MARGESIN, V. GUARNIERI, F. GIACOMOZZI, A. FAES, R. PAL, and M. DECARLI. "STRESS CHARACTERIZATION OF SILICON OXIDE, SILICON NITRIDE, CHROMIUM AND GOLD FILMS FOR MICROMECHANICS." In Proceedings of the 8th Italian Conference. WORLD SCIENTIFIC, 2004. http://dx.doi.org/10.1142/9789812702944_0071.

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Selvam, Karthik, Suma Rajashankar, and Michael J. Haji-Sheikh. "Measurement of Light Sensitivity of Chromium/Porous Silicon Schottky Diodes Made by Silicon Nitride Masking." In 2018 12th International Conference on Sensing Technology (ICST). IEEE, 2018. http://dx.doi.org/10.1109/icsenst.2018.8603629.

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Errai, M., A. El Kaaouachi, H. El Idrissi, A. Zatni, A. Narjis, S. Dlimi, A. Sybous, L. Limouny, and E. Daoudi. "Hopping conduction in amorphous silicon-chromium films at very low temperature." In ADVANCES IN CRYOGENIC ENGINEERING: Transactions of the International Cryogenic Materials Conference ICMC Volume 60. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4860638.

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Kukurudziak, Mykola S., and Eduard V. Maistruk. "Influence of chromium sublayer on silicon P-I-N photodiodes responsivity." In Fifteenth International Conference on Correlation Optics, edited by Oleg V. Angelsky. SPIE, 2021. http://dx.doi.org/10.1117/12.2616170.

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Sohgawa, M., T. Mima, H. Onishi, T. Kanashima, M. Okuyama, K. Yamashita, M. Noda, M. Higuchi, and H. Noma. "Tactle array sensor with inclined chromium/silicon piezoresistive cantilevers embedded in elastomer." In TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2009. http://dx.doi.org/10.1109/sensor.2009.5285509.

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Wada, Tadahiro. "Tool wear of aluminum/chromium/tungsten/silicon-based-coated solid carbide thread milling cutters in thread tapping of chromium-molybdenum steel." In 2016 7th International Conference on Mechanical and Aerospace Engineering (ICMAE). IEEE, 2016. http://dx.doi.org/10.1109/icmae.2016.7549538.

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Reports on the topic "Silicon chromium"

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Rapp, R. A. Codeposition of chromium and silicon onto iron-base alloys via pack cementation. Office of Scientific and Technical Information (OSTI), December 1992. http://dx.doi.org/10.2172/6927298.

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Harper, Mark Andrew. Codeposition of chromium and silicon onto iron-base alloys via pack cementation. Office of Scientific and Technical Information (OSTI), December 1992. http://dx.doi.org/10.2172/10123944.

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