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Journal articles on the topic 'Silicon carbide'

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Author: Grafiati

Published: 4 June 2021

Last updated: 30 July 2024

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1

Meng, Fan Tao, Shan Yi Du, and Yu Min Zhang. "Silicon Carbide Composites Deposited in Silicon Carbide Whiskers by CVI Process." Key Engineering Materials 512-515 (June 2012): 789–92. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.789.

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Chemical vapor deposition (CVD) is an effective method of preparing silicon carbide whiskers or films and chemical vapor infiltration (CVI) can be successfully used as the preparation of SiC composites. In this paper, silicon carbides whiskers were firstly deposited on substrates of RB-SiC by CVD process and then silicon carbide composites were prepared by chemical vapor infiltration in the SiC whiskers in an upright chemical vapor deposition furnace of Φ150mm×450mm with methyltrichloride silicane (MTS) as precursor gas, H2 as carrier gas and Ar as dilute gas. The morphologies of the SiC whiskers grown on RB-SiC substrate and SiC composites infiltrated in SiC whiskers were determined by scanning electron microscope (SEM), and the crystalline phase of the final deposits were confirmed with X-ray diffractometry (XRD) As a result, the curly defects of whiskers decrease with the addition of dilute gas. And by chemical vapor infiltration in SiC whiskers the, SiC composites were successfully prepared. Finally the deposits were determined as β-SiC.

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2

Zhou, You, Kiyoshi Hirao, Yukihiko Yamauchi, and Shuzo Kanzaki. "OS08W0193 Sliding wear of silicon carbide and silicon carbide-graphite composite ceramics." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2003.2 (2003): _OS08W0193. http://dx.doi.org/10.1299/jsmeatem.2003.2._os08w0193.

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3

Idrees, Maria, Husnain Ahmad Chaudhary, Arslan Akbar, Abdeliazim Mustafa Mohamed, and Dina Fathi. "Effect of Silicon Carbide and Tungsten Carbide on Concrete Composite." Materials 15, no. 6 (March 10, 2022): 2061. http://dx.doi.org/10.3390/ma15062061.

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Flexural strength of concrete is an important property, especially for pavements. Concrete with higher flexural strength has fewer cracking and durability issues. Researchers use different materials, including fibers, polymers, and admixtures, to increase the flexural strength of concrete. Silicon carbide and tungsten carbide are some of the hardest materials on earth. In this research, the mechanical properties of carbide concrete composites were investigated. The silicon carbide and tungsten carbide at different percentages (1%, 2%, 3%, and 4%) by weight of cement along with hybrid silicon carbide and tungsten carbide (2% and 4%) were used to produce eleven mixes of concrete composites. The mechanical tests, including a compressive strength test and flexural strength test, along with the rapid chloride permeability test (RCPT), were conducted. It was concluded that mechanical properties were enhanced by increasing the percentages of both individual and hybrid carbides. The compressive strength was increased by 17% using 4% tungsten carbide, while flexural strength was increased by 39% at 4% tungsten carbide. The significant effect of carbides on flexural strength was also corroborated by ANOVA analysis. The improvement in flexural strength makes both carbides desirable for use in concrete pavement. Additionally, the permeability, the leading cause of durability issues, was reduced considerably by using tungsten carbide. It was concluded that both carbides provide promising results by enhancing the mechanical properties of concrete and are compatible with concrete to produce composites.

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4

Renlund, Gary M., Svante Prochazka, and Robert H. Doremus. "Silicon oxycarbide glasses: Part II. Structure and properties." Journal of Materials Research 6, no. 12 (December 1991): 2723–34. http://dx.doi.org/10.1557/jmr.1991.2723.

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Silicon oxycarbide glass is formed by the pyrolysis of silicone resins and contains only silicon, oxygen, and carbon. The glass remains amorphous in x-ray diffraction to 1400 °C and shows no features in transmission electron micrographs (TEM) after heating to this temperature. After heating at higher temperature (1500–1650 °C) silicon carbide lines develop in x-ray diffraction, and fine crystalline regions of silicon carbide and graphite are found in TEM and electron diffraction. XPS shows that silicon-oxygen bonds in the glass are similar to those in amorphous and crystalline silicates; some silicons are bonded to both oxygen and carbon. Carbon is bonded to either silicon or carbon; there are no carbon-oxygen bonds in the glass. Infrared spectra are consistent with these conclusions and show silicon-oxygen and silicon-carbon vibrations, but none from carbon-oxygen bonds. 29Si-NMR shows evidence for four different bonding groups around silicon. The silicon oxycarbide structure deduced from these results is a random network of silicon-oxygen tetrahedra, with some silicons bonded to one or two carbons substituted for oxygen; these carbons are in turn tetrahedrally bonded to other silicon atoms. There are very small regions of carbon-carbon bonds only, which are not bonded in the network. This “free” carbon colors the glass black. When the glass is heated above 1400 °C this network composite rearranges in tiny regions to graphite and silicon carbide crystals. The density, coefficient of thermal expansion, hardness, elastic modulus, index of refraction, and viscosity of the silicon oxycarbide glasses are all somewhat higher than these properties in vitreous silica, probably because the silicon-carbide bonds in the network of the oxycarbide lead to a tighter, more closely packed structure. The oxycarbide glass is highly stable to temperatures up to 1600 °C and higher, because oxygen and water diffuse slowly in it.

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5

Zvonarev, E. V., A. Ph Ilyushchanka, Zh A. Vitko, V. A. Osipov, and D. V. Babura. "Effect of reaction sintering modes on the structure and properties of carbide ceramics." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 63, no. 4 (January 12, 2019): 407–15. http://dx.doi.org/10.29235/1561-8358-2018-63-4-407-415.

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Experimental studies of the structure, phase composition, physical and mechanical properties of the reaction-sintered ceramics based on silicon carbide and boron obtained by reaction sintering have been performed. It has been shown that the properties of the reaction-sintered ceramics based on carbides are largely determined by the quality of impregnation of the porous carbide frame with silicon, which depends on the total and open porosity, shape and size of the pores of the compact, the composition of the charge from the carbide powder. High-temperature sintering, followed by impregnation of the carbide frame with silicon and its interaction with the carbon constituent of the frame, largely determines the properties of the material. The main task in the implementation of this process is to create conditions that ensure the full filling of pores in the initial compact during impregnation with silicon melt and, secondly, maximum activation of chemical interaction between the melt of silicon, carbon and other components that compose the charge. A complex of studies on the effect of compacting pressure and annealing temperature of the charge based on silicon carbide and boron powders with the addition of graphite on the pore structure of the compact and the quality of its impregnation with a silicon melt has been carried out in this work. It has been shown that the density, bending strength, hardness of ceramics based on silicon carbide and boron carbide obtained by reaction sintering are increased with a rise in compacting pressure of carbide frames. The optimum porosity of the carbide frame is 25–30 %; the pore size is 1.0–1.5 μm. It has been also demonstrated that ceramics based on boron carbide and boron carbide with 50 % silicon carbide impregnated with silicon at high-temperature sintering has higher strength and hardness values than those based on silicon carbide due to higher adhesion strength at the interface of boron carbide particles and binder, caused by the dissolution of boron carbide in the silicon melt and the formation of complex carbide particles on the surface.

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6

V.M. Shevko, R.A. Uteeva, A.B. Badikova, G.E. Karataeva, and G.A. Bitanova. "PRODUCTION OF FERROALLOYS, CALCIUM CARBIDE, AND PHOSPHORUS FROM HIGH-SILICON PHOSPHORITE." RASAYAN Journal of Chemistry 16, no. 02 (2023): 955–63. http://dx.doi.org/10.31788/rjc.2023.1628310.

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The article provides information on the interaction of Chilisai phosphorite with carbon, coke, and iron with the production of ferroalloy and calcium carbide and the extraction of phosphorus into gas. Research is conducted using computer thermodynamic modeling, mathematical planning of experiments, and electric smelting of phosphorites in an arc electric furnace. It is found that under equilibrium conditions the interaction occurs with the formation of iron silicides, calcium, silicon carbides, calcium, elemental silicon, aluminum, calcium, silicon oxide (ІІ), gaseous phosphorus (P4, P2), and iron phosphides. An increase in the amount of iron at 1,500-2,000oC increases the degree of extraction of silicon in the alloy but decreases the extraction of calcium in the calcium carbide, the concentration of silicon in the alloy, and the amount of calcium carbide. In the temperature range of 1,900-2,000oC in the presence of 16.8-19.8% of iron, phosphorus completely converts to gas, and there forms an alloy with 45-47.8% of Si and 1.6- 1.9% of Al and calcium carbide in the amount of 150-215 dm3 /kg (with the extraction of 60-63.6% of Si into the alloy and 50-56.4% of Ca into calcium carbide). Electric smelting of phosphorite in an arc furnace produces ferrosilicon of grade FS45 (40-44.7% of Si) with the extraction of 73.8% of silicone into it, as well as calcium carbide up to the second grade in the amount of 200-252 dm3 /kg. Phosphorus is almost completely (99.0-99.4%) reduced during electric smelting and converted into the gas phase.

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7

Mitchell, Tyrone, Lutgard C. Jonghe, Warren J. MoberlyChan, and Robert O. Ritchie. "Silicon Carbide Platelet/Silicon Carbide Composites." Journal of the American Ceramic Society 78, no. 1 (January 1995): 97–103. http://dx.doi.org/10.1111/j.1151-2916.1995.tb08366.x.

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8

Maruyama, Benji, and Fumio S. Ohuchi. "H2O catalysis of aluminum carbide formation in the aluminum-silicon carbide system." Journal of Materials Research 6, no. 6 (June 1991): 1131–34. http://dx.doi.org/10.1557/jmr.1991.1131.

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Aluminum carbide was found to form catalytically at aluminum-silicon carbide interfaces upon exposure to water vapor. Samples, composed of approximately 2 nm thick layers of Al on SiC, were fabricated and reacted in vacuo, and analyzed using XPS. Enhanced carbide formation was detected in samples exposed to 500 Langmuirs H2O and subsequently reacted for 600 s at 873 K. The cause of the catalysis phenomenon is hypothesized to be the weakening of silicon-carbon bonds caused by very strong bonding of oxygen atoms to the silicon carbide surface. Aluminum carbide formation is of interest because of its degrading effect on the mechanical properties of aluminum/silicone carbide reinforced metal matrix composites, as well as its effect on the electrical properties of aluminum metallizations on silicon carbide layers in microelectronic components.

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9

Kmetz, Michael, Steven Suib, and Francis Galasso. "Silicon Carbide/Silicon and Silicon Carbide/Silicon Carbide Composites Produced by Chemical Vapor Infiltration." Journal of the American Ceramic Society 73, no. 10 (October 1990): 3091–93. http://dx.doi.org/10.1111/j.1151-2916.1990.tb06723.x.

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10

Sheth, Manas. "A Comparative Study of Silicon and Silicon Carbide Semiconductors." International Journal of Science and Research (IJSR) 13, no. 2 (February 5, 2024): 785–89. http://dx.doi.org/10.21275/sr24206001809.

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11

Kriegesmann, J., and Matthias Schumacher. "Silicon Carbide Fiber Reinforced Recrystallized Silicon Carbide." Key Engineering Materials 264-268 (May 2004): 1063–66. http://dx.doi.org/10.4028/www.scientific.net/kem.264-268.1063.

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12

Masri, Pierre. "Silicon carbide and silicon carbide-based structures." Surface Science Reports 48, no. 1-4 (November 2002): 1–51. http://dx.doi.org/10.1016/s0167-5729(02)00099-7.

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13

KMETZ, M., S. SUIB, and F. GALASSO. "ChemInform Abstract: Silicon Carbide/Silicon and Silicon Carbide/Silicon Carbide Composites Produced by Chemical Vapor Infiltration." ChemInform 22, no. 2 (August 23, 2010): no. http://dx.doi.org/10.1002/chin.199102375.

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14

Conway, Arthur. "Silicon carbide." Resources Policy 12, no. 3 (September 1986): 286. http://dx.doi.org/10.1016/0301-4207(86)90038-3.

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15

Lee, Kee Sung, In Sub Han, Yong Hee Chung, Sang Kuk Woo, and Soo Wohn Lee. "Hardness and Wear Resistance of Reaction Bonded SiC-B₄C Composite." Materials Science Forum 486-487 (June 2005): 245–48. http://dx.doi.org/10.4028/www.scientific.net/msf.486-487.245.

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Hardness and wear resistant characteristics of reaction-bonded silicon carbides with boron carbide additions are evaluated relative to those of reaction bonded silicon carbide (RBSC). The reaction-bonded SiC-B4C composites exhibit a distinctive improvement of hardness and wear resistance, indicative of high resistance against wear environment. Removal rates for the wear tests are decisively reduced by the addition of boron carbide in the composites. Controlling the amount of carbon content in the starting composition more enhances the hardness of the reaction-bonded composites. Implications concerning the partial decomposition of B4C during reaction process are considered.

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16

Liu, Tao, Mei Yang, Fenfen Han, and Jiasheng Dong. "Influence Mechanism of Silicon on Carbide Phase Precipitation of a Corrosion Resistance Nickel Based Superalloy." Materials 13, no. 4 (February 21, 2020): 959. http://dx.doi.org/10.3390/ma13040959.

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The effect of silicon on diffusion behavior of the carbide forming elements in Ni-Mo-Cr-Fe based corrosion-resistant alloy is studied by diffusion couple experiment. One group of diffusion couples are made of the alloy with a different silicon content, another group of diffusion couples are made of pure nickel and the alloy with different silicon content (0Si, 2Si). Two groups of alloys with same silicon content and different carbon content are also prepared, the microstructure of solution and aging state of these two groups alloys are analyzed, and their stress rupture properties are tested. The effect of silicon on the diffusion of alloy elements and the interaction effect of carbon and silicon on the microstructure and stress rupture properties of the alloy are analyzed. The mechanism of Si on the precipitation behavior of carbide phase in Ni-Mo-Cr-Fe corrosion resistant alloy is discussed. The results show that silicon can promote the diffusion of carbide forming elements and the formation of carbide. The precipitation behavior of the secondary phase is the result of the interaction effect of silicon and carbon, and is related to the thermal history of the alloy. Combined with the characteristic of primary carbides, it is confirmed that the precipitation of M12C type secondary carbide is caused by the relative lack of carbon element and the relative enrichment of carbide forming elements such as molybdenum. The stress rupture properties of two silicon-containing alloys with different carbon contents in solution and aging state are tested. The stress rupture life of low carbon alloy is lower compared with high carbon alloy at solution state, but after aging treatment, the stress rupture life of low carbon alloy is significantly improved, and higher than that of high carbon alloy. The main aim of this research is to reveal the influence mechanism of silicon on carbide phase precipitation of a Ni-Mo-Cr-Fe based corrosion-resistant superalloy, which provides theoretical basis and reference for later alloy design and engineering application.

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17

Panov, V. S. "Cemented carbide cutting tools coated with silicon nitride." Izvestiya Vuzov. Poroshkovaya Metallurgiya i Funktsional’nye Pokrytiya (Universitiesʹ Proceedings. Powder Metallurgy аnd Functional Coatings), no. 4 (December 15, 2018): 104–9. http://dx.doi.org/10.17073/1997-308x-2018-4-104-109.

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The paper describes the technology of producing a wear resistant silicon nitride coating on cemented carbide cutting tools and factors affecting its structure and thickness. A review of domestic and foreign authors’ works is given on the properties and applications of cemented carbides in cutting, drilling, die stamping tools, wear resistant materials, for chipless processing of wood, plastics. It is noted that one of the promising ways of cutting tool development is using indexable throwaway inserts (ITI) with wear resistant coatings. The choice of silicon nitride as a material for cemented carbide tool coating is justified. The data on silicon nitride deposition methods, investigation of cutting tool structures and properties are provided. Laboratory and factory tests of Si3N4-coated cemented carbide tools demonstrated coating applicability in improving the wear resistance and lifetime of cutting inserts.

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18

Pachaiyappan, R., R. Gopinath, and S. Gopalakannan. "Processing Techniques of a Silicon Carbide Heat Exchanger and its Capable Properties – A Review." Applied Mechanics and Materials 787 (August 2015): 513–17. http://dx.doi.org/10.4028/www.scientific.net/amm.787.513.

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Silicon carbides is a composite ceramic material produced from inorganic non-metallic substances, formed from the molten mass which solidifies on cooling and simultaneously matured by the action of heat. It is used in various applications such as grinding wheels, filtration of gases and water, absorption, catalyst supports, concentrated solar powers, thermoelectric conversion etc. The modern usage of silicon carbide is fabricated as a heat exchanger for high temperature applications. Leaving behind steel and aluminium, silicon carbide has an excellent temperature withstanding capability of 1425°C. It is resistant to corrosion and chemical erosion. Modern fusion reactors, Stirling cycle based gas turbines, evaporators in evaporative cooling system for air condition and generator in LiBr/H2O absorption chillers for air conditioning those systems heat transfer rate can be improved by replacing a present heat exchanger with silicon carbide heat exchanger. This review presents a detailed discussion about processing technique of such a silicon carbide. Modern known processing techniques are partial sintering, direct foaming, replica, sacrificial template and bonding techniques. The full potential of these materials can be achieved when properties are directed over specified application. While eyeing over full potential it is highly dependent on processing techniques.

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19

Kodama, Hironori, Hiroshi Sakamoto, and Tadahiko Miyoshi. "Silicon Carbide Monofilament-Reinforced Silicon Nitride or Silicon Carbide Matrix Composites." Journal of the American Ceramic Society 72, no. 4 (April 1989): 551–58. http://dx.doi.org/10.1111/j.1151-2916.1989.tb06174.x.

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20

Chen, Zheng Fei, Y. C. Su, and Yi Bing Cheng. "Formation and Sintering Mechanisms of Reaction Bonded Silicon Carbide-Boron Carbide Composites." Key Engineering Materials 352 (August 2007): 207–12. http://dx.doi.org/10.4028/www.scientific.net/kem.352.207.

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Reaction sintering of boron carbide represents an attractive densification process. In this work, sintering mechanisms of silicon carbide and boron carbide composites were studied. Mixed boron carbide/graphite mixtures were sintered in a vacuumed graphite furnace between 1380 and 1450oC. The samples were in contact with bulk silicon metal which melts at 1410oC. Reaction sequence of the composition was investigated by X-ray diffraction, SEM and TEM. It was found that a reaction between molten silicon and B4C occurred and the reaction produced silicon carbide and silicon-containing boron carbide. Dense composites can be achieved by pressureless sintering at 1450oC and the final microstructure consists of silicon carbide, boron carbide, silicon-containing boron carbide and residual silicon at grain boundaries.

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21

Zhao, Hong Sheng, Zhong Guo Liu, Kai Hong Zhang, Zi Qiang Li, and Xiao Xue Liu. "Formation Mechanism of Porous Silicon Carbide Ceramic Synthesized by Coat-Mix Process." Advanced Materials Research 284-286 (July 2011): 1412–16. http://dx.doi.org/10.4028/www.scientific.net/amr.284-286.1412.

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Porous silicon carbide ceramics were prepared by coat mix process using silicon powders and phenolic resin as silicon and carbon resource. The formation mechanism of silicon carbide was proposed based on the liquid silicon infiltration mechanism, reaction dynamics and thermodynamics analysis. Results show that the formation of silicon carbide by the coat mix process includes the following phases. 1) Infiltration of liquid silicon into porous carbon gap. 2) Formation of silicon carbide particles through the contact and reaction between liquid silicon and silicon surface. 3) Fracture and falling off of silicon carbide layer from the carbon surface. 4) Formation of new silicon carbide layer and particles. 5) The repetition of phase 3) and phase 4) till the reaction is complete and the porous silicon carbide ceramics are formed.

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22

Cherchneff, Isabelle, and Piero Cau. "The chemistry of carbon dust formation." Symposium - International Astronomical Union 191 (1999): 251–60. http://dx.doi.org/10.1017/s0074180900203148.

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We shall review the various types of chemistry involved in the formation of carbonaceous material present in carbon-rich AGB stars, mainly amorphous carbon, silicon carbide and other metal carbides discovered in pre-solar Stardust extracted from meteorites. The chemistry is discussed in the context of laboratory experiments and their application to circumstellar AGB winds. Emphasis is put on polycyclic aromatic hydrocarbons (PAHs), titanium carbide clusters and silicon carbide grains. Attempt to explain the condensation sequences derived from the study of pre-solar grains of meteoretical origin is made on the basis of physio-chemical models which describe the periodically shocked gas close to the photosphere of AGB stars.

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23

Vlaskin, V. I. "Nanocrystalline silicon carbide films for solar cells." Semiconductor Physics Quantum Electronics and Optoelectronics 19, no. 3 (September 30, 2016): 273–78. http://dx.doi.org/10.15407/spqeo19.03.273.

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24

Chabi, Sakineh, Hong Chang, Yongde Xia, and Yanqiu Zhu. "From graphene to silicon carbide: ultrathin silicon carbide flakes." Nanotechnology 27, no. 7 (January 18, 2016): 075602. http://dx.doi.org/10.1088/0957-4484/27/7/075602.

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25

Galashev, Alexander. "Computer implementation of the method for electrolytic production of thin films for biomedical applications: short review." AIMS Biophysics 11, no. 1 (2024): 39–65. http://dx.doi.org/10.3934/biophy.2024004.

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<abstract> <p>Optimizing the electrodeposition process condition requires considerable effort and time. The use of modeling and simulations can largely solve this problem. This short review is focused on the development of mathematical models and molecular dynamics simulations, which can be used to predict the electrodeposition of thin silicon and silicon carbide films using the KCl-KF-KI electrolyte. The use of computer simulations to obtain thin films of silicon nitride and silicon dioxide is considered. Silicon, silicon dioxide, silicon nitride, and silicon carbide are important biomedical materials. Additionally, we consider modeling the decomposition process of various precursors used as sources of Si<sup>4+</sup> and C<sup>4+</sup> ions for electrolytic deposition. The calculation of various physical properties of crystalline silicon and important modifications of silicon carbide, including the thermal conductivity, surface diffusion coefficients, and a detailed structure determined by constructing Voronoi polyhedra, are discussed. A computer model allows one to explore the use of “a defective silicene/silicon carbide” hybrid material as a lithium-ion battery anode. The possibilities for solving problems of processes optimization in modern methods for producing biomedical materials are discussed.</p> </abstract>

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26

Rasmagin S.I. "Effect nanoparticles silicon carbide on the characteristics of solar cells based on lutetium diphthalocyanine." Optics and Spectroscopy 130, no. 12 (2022): 1618. http://dx.doi.org/10.21883/eos.2022.12.55251.3602-22.

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Composites nanoparticles silicon carbide with lutetium diphthalocyanine were created. The size and shape nanoparticles silicon carbide, as well as their phase composition, were determined by electron microscopy. The absorption spectra of nanoparticles silicon carbide, a solution of lutetium diphthalocyanine, and a composite nanoparticles silicon carbide with lutetium diphthalocyanine were measured. Raman scattering spectra were obtained for nanoparticles silicon carbide. A comparative analysis of the absorption spectra of various samples was carried out. The effect of lutetium diphthalocyanine molecules on the optical properties nanoparticles silicon carbide was elucidated. The resulting composite of lutetium diphthalocyanine and nanoparticles silicon carbide was used as a sensitizer to create Gretzel cells. In the control Grotzel cell, lutetium diphthalocyanine was used as an absorber; in the working cell, lutetium diphthalocyanine was used in combination with nanoparticles silicon carbide. The open-circuit voltage and short-circuit current were measured under the same illumination of both Grotzel cells. Keywords: Solar photovoltaics, sensitizers, solar cells, silicon carbide, lutetium diphthalocyanine, semiconductor nanoparticles, Gretzel cells.

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27

Chabi, Sakineh, and Kushal Kadel. "Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor." Nanomaterials 10, no. 11 (November 9, 2020): 2226. http://dx.doi.org/10.3390/nano10112226.

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As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., SixCy, are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer SixCy may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and chemical properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties. It also highlights the significance of these properties for electronics, optoelectronics, magnetic, and energy devices. Finally, it will discuss potential synthesis approaches that can be used to grow 2D silicon carbide.

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28

Расмагин, С. И. "Влияние наночастиц карбида кремния на характеристики солнечных ячеек на основе дифталоцианина лютеция." Оптика и спектроскопия 130, no. 12 (2022): 1893. http://dx.doi.org/10.21883/os.2022.12.54097.3602-22.

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Composites nanoparticles silicon carbide with lutetium diphthalocyanine were created. The size and shape nanoparticles silicon carbide, as well as their phase composition, were determined by electron microscopy. The absorption spectra of nanoparticles silicon carbide, a solution of lutetium diphthalocyanine, and a composite nanoparticles silicon carbide with lutetium diphthalocyanine were measured. Raman scattering spectra were obtained for nanoparticles silicon carbide. A comparative analysis of the absorption spectra of various samples was carried out. The effect of lutetium diphthalocyanine molecules on the optical properties nanoparticles silicon carbide was elucidated. The resulting composite of lutetium diphthalocyanine and nanoparticles silicon carbide was used as a sensitizer to create Gretzel cells. In the control Grätzel cell, lutetium diphthalocyanine was used as an absorber; in the working cell, lutetium diphthalocyanine was used in combination with nanoparticles silicon carbide. The open-circuit voltage and short-circuit current were measured under the same illumination of both Grätzel cells.

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29

Evseev, Yu A., and A. M. Surma. "From silicon to silicon carbide." Russian Electrical Engineering 78, no. 5 (May 2007): 233–35. http://dx.doi.org/10.3103/s1068371207050021.

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30

Thirupathaiah, C., and Sanjeev Reddy K. Hudgikar. "Effect of Silicon Carbide Boron Carbide and Fly-Ash Particles on Aluminium Metal Matrix Composite." Advances in Science and Technology 106 (May 2021): 26–30. http://dx.doi.org/10.4028/www.scientific.net/ast.106.26.

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The current paper deals about the fabrication of composite material is to combine the desirable attributes of metals and ceramics. Aluminium 6063 used as a base material in combination with the Silicon carbide ,Boron carbide and fly-ash were used as reinforcement material. Our intention is to increased or enhanced properties of pure Aluminium 6063 by addition of Silicon Carbide ,Boron Carbide and fly-ash. The process of fabrication composite material is prepared by using stir casting method. In this paper, addition of Silicon Carbide 1% , Boron Carbide 1% and fly-ash1% with aluminium increasing percentage ratio the mechanical properties of composite material is enhanced, so it is clear that the effect of Silicon Carbide , Boron Carbide and fly-ash were helpful to increasing properties of pure Aluminium by addition. The influence of reinforced ratio of silicon carbide, Boron carbide and fly-ash particles on mechanical behavior was examined. The effect of different weight percentage of silicon carbide, Boron carbide and fly-ash in composite on tensile strength, hardness, microstructure was studied. It was observed that the hardness & tensile strength of the composites increased with increasing reinforcement elements addition in it. The distribution of silicon carbide, Boron carbide and fly-ash particles was uniform in aluminum.

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31

Habuka, Hitoshi, Yusuke Fukumoto, Kosuke Mizuno, Yuuki Ishida, and Toshiyuki Ohno. "Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor." Materials Science Forum 821-823 (June 2015): 125–28. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.125.

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The silicon carbide CVD reactor cleaning process was studied by means of detaching silicon carbide particles, which was formed on the silicon carbide coated carbon susceptor surface during the silicon carbide film deposition. The contact points between the particles and the susceptor surface were etched using chlorine trifluoride gas at temperatures lower than 290 °C for 120 min. During this process, the carbon susceptor covered with the silicon carbide coating film suffered from little damage while achieving cleaning.

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32

Weijie Deng, Weijie Deng. "Polishing silicon modification layer on silicon carbide surface by ion beam figuring." Chinese Optics Letters 12, s2 (2014): S22206–322209. http://dx.doi.org/10.3788/col201412.s22206.

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33

Thomas, Stuart. "Synaptic silicon carbide." Nature Electronics 5, no. 6 (June 2022): 323. http://dx.doi.org/10.1038/s41928-022-00793-z.

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34

Sato, Mitsuhiko. "Silicon Carbide Fibers." Seikei-Kakou 33, no. 4 (March 20, 2021): 121–24. http://dx.doi.org/10.4325/seikeikakou.33.121.

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35

Vlaskina, S. I. "Silicon carbide LED." Semiconductor Physics, Quantum Electronics and Optoelectronics 5, no. 1 (March 5, 2002): 71–75. http://dx.doi.org/10.15407/spqeo5.01.071.

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36

Ichikawa, Hiroshi. "Silicon Carbide Fiber." Kobunshi 42, no. 7 (1993): 584–85. http://dx.doi.org/10.1295/kobunshi.42.584.

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37

Iwami, Motohiro. "Silicon carbide: fundamentals." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 466, no. 2 (July 2001): 406–11. http://dx.doi.org/10.1016/s0168-9002(01)00601-5.

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38

Zhang, Daqing, Abdullah Alkhateeb, Hongmei Han, Hasan Mahmood, David N. McIlroy, and M. Grant Norton. "Silicon Carbide Nanosprings." Nano Letters 3, no. 7 (July 2003): 983–87. http://dx.doi.org/10.1021/nl034288c.

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39

Hinoki, Tatsuya, Yutai Katoh, Lance L. Snead, Hun-Chae Jung, Kazumi Ozawa, Hirokazu Katsui, Zhi-Hong Zhong, et al. "Silicon Carbide and Silicon Carbide Composites for Fusion Reactor Application." MATERIALS TRANSACTIONS 54, no. 4 (2013): 472–76. http://dx.doi.org/10.2320/matertrans.mg201206.

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40

Cao, Hai Jie, and Zhou Ming Zhang. "Determination of Silicon-Carbide Content in 95 Silicon-Carbide Brick." Advanced Materials Research 177 (December 2010): 475–77. http://dx.doi.org/10.4028/www.scientific.net/amr.177.475.

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Four methods were used to determine SiC content of self-combined 95 silicon-carbide brick, such as hydrofluoric acid volatilization-gravimetric method, direct method, etc. Results of different methods were compared, and causes of the difference were identified. The test results indicate that impurities compositions have different effects on different test methods. When impurities are free carbon, free silica, iron oxide, silicon oxide, hydrofluoric acid volatilization-gravimetric method is appropriate. When hydrochloric acid-resist impurities are more, it is necessary to choose direct and indirect methods. When using direct method and indirect methods, it is useful to increase the amount of flux to make sure that the specimen is dissolved thoroughly. If necessary, increasing test times is useful.

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41

Jones, Russell H., Charles H. Henager, Charles A. Lewinsohn, and Charles F. Windisch. "Stress-Corrosion Cracking of Silicon Carbide Fiber/Silicon Carbide Composites." Journal of the American Ceramic Society 83, no. 8 (December 20, 2004): 1999–2005. http://dx.doi.org/10.1111/j.1151-2916.2000.tb01503.x.

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42

Newsome, George, Lance L. Snead, Tatsuya Hinoki, Yutai Katoh, and Dominic Peters. "Evaluation of neutron irradiated silicon carbide and silicon carbide composites." Journal of Nuclear Materials 371, no. 1-3 (September 2007): 76–89. http://dx.doi.org/10.1016/j.jnucmat.2007.05.007.

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43

Kim, Yong‐Hyeon, Seung Hoon Jang, and Young‐Wook Kim. "Joining of silicon carbide ceramics using a silicon carbide tape." International Journal of Applied Ceramic Technology 16, no. 4 (February 20, 2019): 1295–303. http://dx.doi.org/10.1111/ijac.13202.

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44

Sun, De-Rong, Gong Wang, Yunfei Li, Yu Yu, Chengbin Shen, Yulei Wang, and Zhiwei lu. "Laser drilling in silicon carbide and silicon carbide matrix composites." Optics & Laser Technology 170 (March 2024): 110166. http://dx.doi.org/10.1016/j.optlastec.2023.110166.

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45

Riebisch, M., B. Pustal, and A. Bührig-Polaczek. "Influence of Carbide-Promoting Elements on the Microstructure of High-Silicon Ductile Iron." International Journal of Metalcasting 14, no. 4 (March 9, 2020): 1152–61. http://dx.doi.org/10.1007/s40962-020-00442-1.

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Abstract Because of its low cost, steel scrap is one of the most important raw materials for the production of ductile iron (DI). The amount of carbide-promoting elements in steel scrap, such as chromium, manganese, molybdenum, niobium and vanadium, is expected to increase in the future. Most of these elements have a negative impact on the microstructure and mechanical properties of DI. The solubility of carbide-promoting elements in solid solution-strengthened DI materials, standardized in DIN EN 1563:2011, is modified by the high silicon content. For these new materials, the tolerance limits for carbide-promoting elements and their mutual influence must be known to ensure a sustainable production process. To investigate the individual and combined impact of carbide-promoting elements on the carbide content in high-silicon ductile iron EN-GJS-500-14, experimental investigations and thermodynamic–kinetic microstructure simulations were carried out. Microstructure was characterized using metallographic analysis, and quantitative relations between chemical composition and microstructure were developed by means of regression analysis. Besides this quantitative analysis, it was found that the formation of grain boundary carbides can be detected via thermal analysis. Furthermore, experiments and simulations showed that vanadium promotes the formation of chunky graphite in high-silicon DI castings.

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46

Astashenkova, Olga N., Andrej V. Korlyakov, and Victor V. Luchinin. "Micromechanics Based on Silicon Carbide." Materials Science Forum 740-742 (January 2013): 998–1001. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.998.

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This paper describes using of silicon carbide for micromechanical systems. Low stressed sensitive membrane signal converters, thin film transducers and piezoresistive sensors were formed based on silicon carbide films. The mechanical properties of silicon carbide films were determined.

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47

Kumar, K. J. Santhosh, and Rajaneesh N. Marigoudar. "Comparative study of cutting force development during the machining of un-hybridized and hybridized ZA43 based metal matrix composites." Journal of the Mechanical Behavior of Materials 28, no. 1 (December 17, 2019): 146–52. http://dx.doi.org/10.1515/jmbm-2019-0016.

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AbstractIn the present study, turning of two grades of composites such as ZA43 silicon carbide and ZA43 silicon carbide and graphite was carried out. The fabrication of both categories of composites were done using stir casting technique. The silicon carbide of grit size 60μm with concentration of 5% was reinforced for one category of the composite and for the other grade of composite, 5% silicon carbide and graphite were added. Thus fabricated materials were turned on a conventional lathe using coated carbide tools (SNMG). Dry turning of the fabricated composite was carried out with varying cutting parameters. Measurement of cutting force was done for the both compositions of fabricated materials using lathe tool dynamometer. It was observed that, while machining composite containing silicon carbide and graphite, tool experience more cutting force than composite containing silicon carbide alone.

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48

Karelin, Vladimir A., and Alexandr Strashko. "Obtaining the fine-grained silicon carbide, used in the synthesis of construction ceramics." Resource-Efficient Technologies, no. 2 (July 27, 2016): 50–60. http://dx.doi.org/10.18799/24056529/2016/2/46.

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Silicon carbide is used in the production of construction and temperature-resistant goods, capable of withstanding high mechanical and thermal loads. During recent times, silicon carbide has been frequently used in the electronics industry. Since sintered silicon carbide has increasingly been used as a replacement for metal components of various devices, the process of obtaining compact goods from silicon powder has become thedefining factor in the technology used for its synthesis. The selection of conditions in which the sintering is conducted depends on granulometric structure, the form and the surface condition of the initial powder. The work consists of the synthesis of silicon carbide powder using the purified form of metallurgical silicon powder and soot. The qualities of testing samples were studied, where silicon carbide was obtained using establishedtechnology, from mechanically activated elementary, fine-grained silicon and soot, by pyrolytic synthesis. It was demonstrated that synthesis produces highly pure silicon carbide powder, (α- and β-phases) with a granulometric composition that allowed subsequent sintering to produce high quality compact goods. It was established that the content of silica in synthesized silicon carbide powder does not exceed 1–2% of the totalmass.

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49

Bansal, Shubhranshu, and J. S. Saini. "Mechanical and Wear Properties of SiC/Graphite Reinforced Al359 Alloy-based Metal Matrix Composite." Defence Science Journal 65, no. 4 (July 20, 2015): 330. http://dx.doi.org/10.14429/dsj.65.8676.

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<p>Al359 alloy was reinforced with Silicon Carbide and Silicon Carbide/Graphite particles using stir casting process. Thereafter their mechanical and wear properties were investigated. It was found that the hardness of the Al359-Silicon Carbide composite is better than Al359-Silicon Carbide-Graphite composite. The Silicon Carbide/Graphite reinforced composite exhibits a superior ultimate tensile strength against Silicon Carbide reinforced composite. The wear test was conducted at different loading, sliding velocities and sliding distances conditions. Results showed that the wear resistance of Al359 alloy increased with the reinforcement of Silicon Carbide/Graphite material for higher loading, sliding velocities and sliding distance conditions. SEM images of the worn surface of the pin were examined to study their wear mechanism.</p><p><strong>Defence Science Journal, Vol. 65, No. 4, July 2015, pp. 330-338, DOI: http://dx.doi.org/10.14429/dsj.65.8676</strong></p>

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Knowles, Kevin M., and Servet Turan. "Boron nitride–silicon carbide interphase boundaries in silicon nitride–silicon carbide particulate composites." Journal of the European Ceramic Society 22, no. 9-10 (September 2002): 1587–600. http://dx.doi.org/10.1016/s0955-2219(01)00481-2.

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