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Journal articles on the topic 'Silicon-carbide thin films'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 March 2023

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1

Astashenkova, Olga N., Andrej V. Korlyakov, and Victor V. Luchinin. "Micromechanics Based on Silicon Carbide." Materials Science Forum 740-742 (January 2013): 998–1001. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.998.

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This paper describes using of silicon carbide for micromechanical systems. Low stressed sensitive membrane signal converters, thin film transducers and piezoresistive sensors were formed based on silicon carbide films. The mechanical properties of silicon carbide films were determined.

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2

Demichelis, F., C. F. Pirri, and E. Tresso. "Microcrystallization formation in silicon carbide thin films." Philosophical Magazine B 66, no. 1 (July 1992): 135–46. http://dx.doi.org/10.1080/13642819208221301.

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3

Wang, Shih Han, Chia Chin Chiang, Liren Tsai, Wen Chung Fang, and Jian Long Huang. "The Friction Characteristics and Microscopic Properties of Composite Electroplating Thin Films." Applied Mechanics and Materials 479-480 (December 2013): 60–63. http://dx.doi.org/10.4028/www.scientific.net/amm.479-480.60.

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The development of composite thin film materials bloomed with increasing demand and technical improvements. They have been used in various engineering areas, such as micro-conductor, sensors, and micro-electro-mechanical-system (MEMS) [1-. Nowadays, scientists were able to electroplate silicon carbide thin films directly on metal materials. Silicon carbide has many excellent mechanical properties, such as high Youngs modulus, high melting point, high hardness, and chemical inertness with resistance to high temperature oxidation and creep [4-7]. It is widely utilized in automotive and aerospace industry. Hence, it is very important to improve the durability and reliability of electroplated silicon carbide thin films.

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4

Nutt, Steven R., David J. Smith, H. J. Kim, and Robert F. Davis. "Interface structures in beta‐silicon carbide thin films." Applied Physics Letters 50, no. 4 (January 26, 1987): 203–5. http://dx.doi.org/10.1063/1.97661.

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5

Jean, A., M. A. El Khakani, M. Chaker, S. Boily, E. Gat, J. C. Kieffer, H. Pépin, M. F. Ravet, and F. Rousseaux. "Biaxial Young’s modulus of silicon carbide thin films." Applied Physics Letters 62, no. 18 (May 3, 1993): 2200–2202. http://dx.doi.org/10.1063/1.109441.

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6

Edmond, J. A., J. Ryu, J. T. Glass, and R. F. Davis. "Electrical Contacts to Beta Silicon Carbide Thin Films." Journal of The Electrochemical Society 135, no. 2 (February 1, 1988): 359–62. http://dx.doi.org/10.1149/1.2095615.

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7

Bellante, J. J., H. Kahn, R. Ballarini, C. A. Zorman, M. Mehregany, and A. H. Heuer. "Fracture toughness of polycrystalline silicon carbide thin films." Applied Physics Letters 86, no. 7 (2005): 071920. http://dx.doi.org/10.1063/1.1864246.

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8

Parkhutik, V. P., F. Namavar, and E. Andrade. "Photoluminescence from thin porous films of silicon carbide." Thin Solid Films 297, no. 1-2 (April 1997): 229–32. http://dx.doi.org/10.1016/s0040-6090(96)09422-9.

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9

Kefif, K., Y. Bouizem, A. Belfedal, J. D. Sib, D. Benlakehal, and L. Chahed. "Hydrogen related crystallization in silicon carbide thin films." Optik 154 (February 2018): 459–66. http://dx.doi.org/10.1016/j.ijleo.2017.10.083.

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10

Laine, A. D., A. M. Mezzasalma, S. Rizzo, and G. Mondio. "Spectrophotometry of ion implanted silicon carbide thin films." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 116, no. 1-4 (August 1996): 338–41. http://dx.doi.org/10.1016/0168-583x(96)00128-0.

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11

Chiu, Hisn-Tien, and Shu-Fen Lee. "Deposition of silicon carbide thin films from dodecamethylcyclohexasilane." Journal of Materials Science Letters 10, no. 22 (1991): 1323–25. http://dx.doi.org/10.1007/bf00722649.

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12

Lattemann, M., E. Nold, S. Ulrich, H. Leiste, and H. Holleck. "Investigation and characterisation of silicon nitride and silicon carbide thin films." Surface and Coatings Technology 174-175 (September 2003): 365–69. http://dx.doi.org/10.1016/s0257-8972(03)00695-9.

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13

More, K. L., J. Bentley, and R. F. Davis. "Antiphase boundaries in β-Sic thin films." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 282–83. http://dx.doi.org/10.1017/s0424820100126275.

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Beta-SiC thin films are currently being grown via chemical vapor deposition (CVD) at North Carolina State University for potential use as a semiconductor material. Silicon carbide is a wide bandgap semiconductor with a high, saturated electron drift velocity and, as such, is a primary candidate material for high-temperature, high-speed, and high-frequency electronic devices. The β-SiC thin films are epitaxially grown on {100} silicon substrates by CVD of silicon and carbon from vapors of SiH4 and C2H4 entrained in H2 at a growth temperature of 1633 K. Since there is a lattice mismatch of -20% and a difference in thermal expansion coefficients of ∼10% between the silicon substrate and β-SiC, the silicon surface is reacted with C2H4 at 1583 K. for 150 s to form a converted β-SiC surface layer, approximately 5 nm thick, which helps prevent the formation of cracks during the growth of the thin films. The films are grown at a rate of ∼2 μm/h and are grown as thick as 40 μm.

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14

Bae, K. E., K. W. Chae, J. K. Park, W. S. Lee, and Y. J. Baik. "Oxidation behavior of amorphous boron carbide–silicon carbide nano-multilayer thin films." Surface and Coatings Technology 276 (August 2015): 55–58. http://dx.doi.org/10.1016/j.surfcoat.2015.06.053.

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15

Nemmour, Soumia, Siham Djoumi, Fatiha Kail, Pere Roura-Grabulosa, Pere Roca i Cabarrocas, and Larbi Chahed. "Hydrogen evolution in hydrogenated microcrystalline silicon carbide thin films." Journal of Vacuum Science & Technology B 37, no. 3 (May 2019): 031218. http://dx.doi.org/10.1116/1.5090174.

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16

Wang, Y. H., J. Lin, and C. H. A. Huan. "Multiphase structure of hydrogenated amorphous silicon carbide thin films." Materials Science and Engineering: B 95, no. 1 (July 2002): 43–50. http://dx.doi.org/10.1016/s0921-5107(02)00204-0.

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17

Jackson, K. M., J. Dunning, C. A. Zorman, M. Mehregany, and W. N. Sharpe. "Mechanical properties of epitaxial 3C silicon carbide thin films." Journal of Microelectromechanical Systems 14, no. 4 (August 2005): 664–72. http://dx.doi.org/10.1109/jmems.2005.847933.

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18

Colombo, Paolo, Thomas E. Paulson, and Carlo G. Pantano. "Synthesis of Silicon Carbide Thin Films with Polycarbosilane (PCS)." Journal of the American Ceramic Society 80, no. 9 (January 20, 2005): 2333–40. http://dx.doi.org/10.1111/j.1151-2916.1997.tb03124.x.

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19

Aldrich, Darin J., Kim M. Jones, Shrinivas Govindarajan, John J. Moore, and Tim R. Ohno. "Microstructure of Molybdenum Disilicide-Silicon Carbide Nanocomposite Thin Films." Journal of the American Ceramic Society 81, no. 6 (January 21, 2005): 1471–76. http://dx.doi.org/10.1111/j.1151-2916.1998.tb02505.x.

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20

Borshch, A. A., V. N. Starkov, V. I. Volkov, V. I. Rudenko, A. Yu Boyarchuk, and A. V. Semenov. "Optical limiting effects in nanostructured silicon carbide thin films." Quantum Electronics 43, no. 12 (December 31, 2013): 1122–26. http://dx.doi.org/10.1070/qe2013v043n12abeh015270.

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21

Wang, Wen-Xiu, Li-Sha Niu, Yang-Yang Zhang, and En-Qiang Lin. "Tensile mechanical behaviors of cubic silicon carbide thin films." Computational Materials Science 62 (September 2012): 195–202. http://dx.doi.org/10.1016/j.commatsci.2012.05.035.

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22

Kerdiles, S., A. Berthelot, F. Gourbilleau, and R. Rizk. "Low temperature deposition of nanocrystalline silicon carbide thin films." Applied Physics Letters 76, no. 17 (April 24, 2000): 2373–75. http://dx.doi.org/10.1063/1.126350.

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23

Šafránkováa, J., J. Hurana, I. Hotovýb, AP Kobzevc, and SA Korenevc. "Characterization of nitrogen-doped amorphous silicon carbide thin films." Vacuum 51, no. 2 (October 1998): 165–67. http://dx.doi.org/10.1016/s0042-207x(98)00151-1.

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24

Schröter, Bernd, M. Kreuzberg, Andreas Fissel, K. Pfennighaus, and W. Richter. "Polytype and Surface Characterization of Silicon Carbide Thin Films." Materials Science Forum 264-268 (February 1998): 355–58. http://dx.doi.org/10.4028/www.scientific.net/msf.264-268.355.

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25

Matsuda, Y., S. W. King, J. Bielefeld, J. Xu, and R. H. Dauskardt. "Fracture properties of hydrogenated amorphous silicon carbide thin films." Acta Materialia 60, no. 2 (January 2012): 682–91. http://dx.doi.org/10.1016/j.actamat.2011.10.014.

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26

Noli, F., P. Misaelides, M. Kokkoris, and J. P. Riviere. "Application of ion beam analysis for the characterization of SiC- and DLC-thin films." HNPS Proceedings 15 (January 1, 2020): 269. http://dx.doi.org/10.12681/hnps.2610.

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Three series of protective coatings (thickness ca. 200-300 nm) were prepared on the surface of Ti-Al-V alloy (TA6V): silicon carbide (SiC) films produced by ion sputtering (I), silicon carbide films and subjected to Dynamic Ion Mixing (DIM) during the deposition procedure (II) and Diamond Like Carbon (DLC) films produced by ion beam deposition (III). The chemical composition (Si, C and O) of the films was determined using ion beam analysis techniques. The silicon, carbon and oxygen depth distribution was determined by proton Rutherford backscattering spectrometry (p-RBS) and using the resonances at 4.265 and 3.035 MeV of the 12C(α,α)12C and 16O(α,α)16O interactions respectively. The ratio of Si:C was found to be close to the stoichiometric one. The corrosion resistance of the coated samples was tested under strong aggressive conditions (5M HCl at 50 oC). The investigation following the corrosion attack showed that the thickness of the films remained practically unchanged. Only slight diffusion and dissolution effects were observed indicating the good quality of the produced thin films.

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27

Dubček, P., Nenad Radić, S. Bernstorff, K. Salamon, and O. Milat. "Nanosize Structure of Sputter-Deposited Tungsten Carbide Thin Films." Solid State Phenomena 99-100 (July 2004): 251–54. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.251.

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The structure of thin films of tungsten-carbon, deposited onto monocrystalline silicon substrates by reactive magnetron sputtering (argon + benzene) in a wide range of preparation parameters has been investigated by GISAXS. Substrates were in a fixed position relative to the two adjacent cylindrical magnetrons. Benzene partial pressure was varied from 1% to 10% of the total working gas pressure. A series of samples were prepared, with the substrate held at room temperature and 400°C, and the substrate potential held at floating potential or biased -70 V with respect to the discharge plasma. The bulk particle contribution to the scattering was investigated outside of the specular plane, applying a two dimensional CCD detector. For higher values of benzene partial pressure, the generated films consist of densely packed tungsten carbide grains in an amorphous, carbon rich matrix, while, in some cases, the lower benzene pressure resulted in isolated carbon rich particles in tungsten carbide. From earlier work it is known that the preparation parameters influence the film’s chemical composition, the relatively complex dependence of particle sizes on benzene partial pressure can be explained as a function of the relative carbon content.

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28

PENG, YINQIAO, JICHENG ZHOU, GUIBIN LEI, YUANJU GAN, and YUEFENG CHEN. "MICROSTRUCTURE AND BLUE PHOTOLUMINESCENCE OF HYDROGENATED SILICON CARBONITRIDE THIN FILMS." Surface Review and Letters 26, no. 04 (May 2019): 1850177. http://dx.doi.org/10.1142/s0218625x18501779.

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Hydrogenated silicon carbonitride (SiCN:H) thin films were deposited by sputtering of silicon carbide target in hydrogen-doped argon and nitrogen atmospheres. The properties of the SiCN:H films were analyzed by scanning electron microscopy with energy dispersive spectrometer, atomic force microscope, Fourier transform infrared spectroscopy, X-ray diffraction and fluorescence spectrophotometer. No distinct crystal was formed in the SiCN:H films as-deposited and annealed at 600∘C and 800∘C. The SiCN:H films were mainly composed of Si–N, Si–C, Si–O, C–C, C–N, C[Formula: see text]N, N–Hn bonds and SiCxNy network structure. The strong blue photoluminescence observed from the SiCN:H film annealed at 600∘C was attributed to SiCxNy network structure.

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29

Fu, Xiao-An, Sangsoo Noh, Li Chen, and Mehran Mehregany. "Very Thin Poly-SiC Films for Micro/Nano Devices." Journal of Nanoscience and Nanotechnology 8, no. 6 (June 1, 2008): 3063–67. http://dx.doi.org/10.1166/jnn.2008.18321.

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We report characterization of nitrogen-doped, very thin, low-stress polycrystalline silicon carbide (poly-SiC) films suitable for fabricating micro/nano devices. The poly-SiC films are deposited on 100 mm-diameter (100) silicon wafers in a large-scale, hot-wall, horizontal LPCVD furnace using SiH2Cl2 and C2H2 as precursors and NH3 as doping gas. The deposition temperature and pressure are fixed at 900 °C and 4 Torr, respectively. The deposition rate increases substantially in the first 50 minutes, transitioning to a limiting value thereafter. The deposited films exhibit (111)-orientated polycrystalline 3C-SiC texture. HR-TEM indicates a 1 nm to 4 nm amorphous SiC layer at the SiC/silicon interface. The residual stress and the resistivity of the films are found to be thickness dependent in the range of 100 nm to 1 μm. Films with thickness less than 100 nm suffer from voids or pinholes. Films thicker than 100 nm are shown to be suitable for fabricating micro/nano devices.

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30

El Khakani, M. A., M. Chaker, A. Jean, S. Boily, J. C. Kieffer, M. E. O'Hern, M. F. Ravet, and F. Rousseaux. "Hardness and Young's modulus of amorphous a-SiC thin films determined by nanoindentation and bulge tests." Journal of Materials Research 9, no. 1 (January 1994): 96–103. http://dx.doi.org/10.1557/jmr.1994.0096.

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Due to its interesting mechanical properties, silicon carbide is an excellent material for many applications. In this paper, we report on the mechanical properties of amorphous hydrogenated or hydrogen-free silicon carbide thin films deposited by using different deposition techniques, namely plasma enhanced chemical vapor deposition (PECVD), laser ablation deposition (LAD), and triode sputtering deposition (TSD). a-SixC1−x: H PECVD, a-SiC LAD, and a-SiC TSD thin films and corresponding free-standing membranes were mechanically investigated by using nanoindentation and bulge techniques, respectively. Hardness (H), Young's modulus (E), and Poisson's ratio (v) of the studied silicon carbide thin films were determined. It is shown that for hydrogenated a-SixC1−x: H PECVD films, both hardness and Young's modulus are dependent on the film composition. The nearly stoichiometric a-SiC: H films present higher H and E values than the Si-rich a-SixC1−x: H films. For hydrogen-free a-SiC films, the hardness and Young's modulus were as high as about 30 GPa and 240 GPa, respectively. Hydrogen-free a-SiC films present both hardness and Young's modulus values higher by about 50% than those of hydrogenated a-SiC: H PECVD films. By using the FTIR absorption spectroscopy, we estimated the Si-C bond densities (NSiC) from the Si-C stretching absorption band (centered around 780 cm−1), and were thus able to correlate the observed mechanical behavior of a-SiC films to their microstructure. We indeed point out a constant-plus-linear variation of the hardness and Young's modulus upon the Si-C bond density, over the NSiC investigated range [(4–18) × 1022 bond · cm−3], regardless of the film composition or the deposition technique.

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31

Semenov, A. V., D. V. Lubov, and M. V. Makhonin. "Ozone Sensitive Properties of Thin Films of Nanocrystalline Silicon Carbide." Journal of Nano- and Electronic Physics 12, no. 5 (2020): 05016–1. http://dx.doi.org/10.21272/jnep.12(5).05016.

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32

Okajima, Yoshiaki, and Kunio Miyazaki. "Solid-State Reaction between Manganese Thin Films and Silicon carbide." Japanese Journal of Applied Physics 24, Part 1, No. 8 (August 20, 1985): 940–43. http://dx.doi.org/10.1143/jjap.24.940.

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33

Sundaram, K. B., and J. Alizadeh. "Deposition and optical studies of silicon carbide nitride thin films." Thin Solid Films 370, no. 1-2 (July 2000): 151–54. http://dx.doi.org/10.1016/s0040-6090(00)00956-1.

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34

Wang, Yihua, Jianyi Lin, Cheng Hon Alfred Huan, Zhe Chuan Feng, and Soo Jin Chua. "High temperature annealing of hydrogenated amorphous silicon carbide thin films." Thin Solid Films 384, no. 2 (March 2001): 173–76. http://dx.doi.org/10.1016/s0040-6090(00)01867-8.

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35

De Cesare, G., S. La Monica, G. Maiello, G. Masini, E. Proverbio, A. Ferrari, N. Chitica, et al. "Crystallization of silicon carbide thin films by pulsed laser irradiation." Applied Surface Science 106 (October 1996): 193–97. http://dx.doi.org/10.1016/s0169-4332(96)00399-6.

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36

De Cesare, G., S. La Monica, G. Maiello, E. Proverbio, A. Ferrari, M. Dinescu, N. Chitica, I. Morjan, and A. Andrei. "Crystallization of amorphous silicon carbide thin films by laser treatment." Surface and Coatings Technology 80, no. 1-2 (March 1996): 237–41. http://dx.doi.org/10.1016/0257-8972(95)02720-3.

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37

Cho, N. I., Y. Choi, and S. J. Noh. "Plasma assisted process for deposition of silicon carbide thin films." Current Applied Physics 6, no. 2 (February 2006): 161–65. http://dx.doi.org/10.1016/j.cap.2005.07.031.

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38

Valentini, A., A. Convertino, M. Alvisi, R. Cingolani, T. Ligonzo, R. Lamendola, and L. Tapfer. "Synthesis of silicon carbide thin films by ion beam sputtering." Thin Solid Films 335, no. 1-2 (November 1998): 80–84. http://dx.doi.org/10.1016/s0040-6090(98)00895-5.

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39

Lee, Seokwon, Jung Hyun Kim, Young Park, and Wonseok Choi. "Analysis of the Properties of Tungsten Carbide Thin Films According to the Sputtering Radio Frequency Power." Science of Advanced Materials 12, no. 10 (October 1, 2020): 1568–71. http://dx.doi.org/10.1166/sam.2020.3794.

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In this study, we investigated characteristics of tungsten carbide thin film according to carbon and tungsten ratio. Tungsten carbide thin film was co-sputtered on silicon substrate and glass substrates using an RF magnetron sputtering system. To analyze the characteristics according to the composition ratio of the tungsten carbide thin film, the RF powers of carbon/tungsten target were divided into 100 W/100 W, 125 W/75 W, 150 W/50 W, and 175 W/25 W, respectively. Hall measurement and 4 points probes were used to measure electrical properties of the tungsten carbide thin films. Raman and field emission scanning electron microscope (FE-SEM) analysis were performed.

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40

Tripathi, R. K., O. S. Panwar, A. K. Kesarwani, Ishpal Rawal, B. P. Singh, M. K. Dalai, and S. Chockalingam. "Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications." RSC Adv. 4, no. 97 (2014): 54388–97. http://dx.doi.org/10.1039/c4ra08343a.

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This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique using P doped solid silicon target as a cathode in the presence of acetylene gas.

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41

Chubarov, M., H. Pedersen, H. Högberg, Zs Czigany, and A. Henry. "Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates." CrystEngComm 16, no. 24 (2014): 5430–36. http://dx.doi.org/10.1039/c4ce00381k.

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Epitaxial growth of rhombohedral boron nitride (r-BN) on different polytypes of silicon carbide (SiC) is demonstrated using thermally activated hot-wall chemical vapour deposition and triethyl boron and ammonia as precursors.

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42

Banerjee, Ratnabali, and Swati Ray. "Thermoelectric power in boron-doped hydrogenated amorphous-silicon and silicon-carbide thin films." Journal of Non-Crystalline Solids 89, no. 1-2 (January 1987): 1–8. http://dx.doi.org/10.1016/s0022-3093(87)80315-0.

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43

Peng, Xiaofeng, Lixin Song, Jia Meng, Yuzhi Zhang, and Xingfang Hu. "Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target." Applied Surface Science 173, no. 3-4 (March 2001): 313–17. http://dx.doi.org/10.1016/s0169-4332(01)00010-1.

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44

Lattemann, M., S. Ulrich, H. Holleck, M. Stüber, and H. Leiste. "Characterisation of silicon carbide and silicon nitride thin films and Si3N4/SiC multilayers." Diamond and Related Materials 11, no. 3-6 (March 2002): 1248–53. http://dx.doi.org/10.1016/s0925-9635(01)00622-7.

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45

ILIESCU, Ciprian. "A COMPREHENSIVE REVIEW ON THIN FILM DEPOSITIONS ON PECVD REACTORS." Annals of the Academy of Romanian Scientists Series on Science and Technology of Information 14, no. 1-2 (2021): 12–24. http://dx.doi.org/10.56082/annalsarsciinfo.2021.1-2.12.

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The deposition of thin films by Plasma Enhanced Chemical Vapor Deposition (PECVD) method is a critical process in the fabrication of MEMS or semiconductor devices. The current paper presents an comprehensive overview of PECVD process. After a short description of the PECVD reactors main layers and their application such as silicon oxide, TEOS, silicon nitride, silicon oxynitride, silicon carbide, amorphous silicon, diamond like carbon are presented. The influence of the process parameters such as: chamber pressure, substrate temperature, mass flow rate, RF Power and RF Power mode on deposition rate, film thickness uniformity, refractive index uniformity and film stress were analysed. The main challenge of thin films PECVD deposition for Microelectromechanical Systems (MEMS)and semiconductor devices is to optimize the deposition parameters for high deposition rate with low film stress which and if is possible at low deposition temperature.

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46

Chaddha, A. K., J. D. Parsons, J. Wu, H‐S Chen, D. A. Roberts, and H. Hockenhull. "Chemical vapor deposition of silicon carbide thin films on titanium carbide, using 1,3 disilacyclobutane." Applied Physics Letters 62, no. 24 (June 14, 1993): 3097–98. http://dx.doi.org/10.1063/1.109147.

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47

Lee, Jung Ho, Ji Hong Kim, Kang Min Do, Byung Moo Moon, Sung Jae Joo, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim, and Sang Mo Koo. "GaZnO as a Transparent Electrode to Silicon Carbide." Materials Science Forum 717-720 (May 2012): 849–52. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.849.

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The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS~250 to 550oC) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 oC, whereas the lowest resistivity (~3.3 x 10-4 Ωcm) and highest carrier concentration (~1.33x1021cm-3) values are observed for the GaZnO films deposited at 400 oC. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ Introduction ions may affect the electrical properties of GaZnO films on SiC.

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48

Nehate, Shraddha Dhanraj, Ashwin Kumar Saikumar, and Kalpathy B. Sundaram. "Influence of Substrate Temperature on Electrical and Optical Properties of Hydrogenated Boron Carbide Thin Films Deposited by RF Sputtering." Coatings 11, no. 2 (February 9, 2021): 196. http://dx.doi.org/10.3390/coatings11020196.

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Amorphous hydrogenated boron carbide films were deposited on silicon and glass substrates using radio frequency sputtering. The substrate temperature was varied from room temperature to 300 °C. The substrate temperature during deposition was found to have significant effects on the electrical and optical properties of the deposited films. X-ray photoelectron spectroscopy (XPS) revealed an increase in sp2-bonded carbon in the films with increasing substrate temperature. Reflection electron energy loss spectroscopy (REELS) was performed in order to detect the presence of hydrogen in the films. Metal-insulator-metal (MIM) structure was developed using Al and hydrogenated boron carbide to measure dielectric value and resistivity. Deposited films exhibited lower dielectric values than pure boron carbide films. With higher substrate deposition temperature, a decreasing trend in dielectric value and resistivity of the films was observed. For different substrate temperatures, the dielectric value of films ranged from 6.5–3.5, and optical bandgap values were between 2.25–2.6 eV.

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Vlaskina, S. I., S. P. Kruchinin, E. Ya Kuznetsova, V. E. Rodionov, G. N. Mishinova, and G. S. Svechnikov. "Nanostructures in silicon carbide crystals and films." International Journal of Modern Physics B 30, no. 13 (May 19, 2016): 1642019. http://dx.doi.org/10.1142/s0217979216420194.

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Phase transformations of SiC crystals with grown original defects and thin films have been presented. The SiC crystals were grown by the Tairov method and the films were obtained by the “sandwich” and Chemical Vapor Deposition (CVD) methods.The analysis of absorption spectra, excitation spectra and low-temperature photoluminescence spectra testifies to the formation of a new microphase during the growth. The complex spectrum can be decomposed into similar structure-constituting spectra shifted on the energy scale relative to the former. Such spectra are indicators of the formation of new nanophases.The joint consideration of photoluminescence spectra, excitement photoluminescence spectra and absorption spectra testifies to the uniformity of different spectra and the autonomy of each of them. Structurally, the total complexity spectra correlate with the degree of disorder (imperfection) of the crystal and are related to the peculiarities of a defective performance such as a one-dimensional disorder. Three different types of spectra have three different principles of construction and behavior.

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Merie, Violeta, Marius Pustan, Corina Bîrleanu, Gavril Negrea, and Ovidiu Belcin. "Substrate Influence on the Mechanical and Tribological Characteristics of Gold Thin Films for MEMS Applications." Advanced Engineering Forum 13 (June 2015): 59–66. http://dx.doi.org/10.4028/www.scientific.net/aef.13.59.

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The development of micro-and nanoelectromechanical systems (MEMS/NEMS) makes use of different thin films such as aluminum, gold, silicon, silver, titanium nitride, silicon carbide etc. This study is a research concerning the influence of substrate nature on the tribological and mechanical characteristics of gold thin films elaborated by thermal evaporation method, for space applications. Three different substrates were employed, namely: C45 steel, plastic (polycarbonate) and glass. Atomic force microscopy investigations were performed in order to characterize the obtained thin films at nanoscale. The nanohardness, Young’s modulus, roughness and the friction force are some characteristics that were determined. A significant influence of substrate nature on both mechanical and tribological properties of researched gold thin films was marked out. Regarding the topography, the smallest roughness was determined on the gold thin films deposited on glass substrate.

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