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Relevant bibliographies by topics / Silicon-carbide thin films

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Academic literature on the topic 'Silicon-carbide thin films'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 March 2023

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Journal articles on the topic "Silicon-carbide thin films"

1

Astashenkova, Olga N., Andrej V. Korlyakov, and Victor V. Luchinin. "Micromechanics Based on Silicon Carbide." Materials Science Forum 740-742 (January 2013): 998–1001. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.998.

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This paper describes using of silicon carbide for micromechanical systems. Low stressed sensitive membrane signal converters, thin film transducers and piezoresistive sensors were formed based on silicon carbide films. The mechanical properties of silicon carbide films were determined.

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Demichelis, F., C. F. Pirri, and E. Tresso. "Microcrystallization formation in silicon carbide thin films." Philosophical Magazine B 66, no. 1 (July 1992): 135–46. http://dx.doi.org/10.1080/13642819208221301.

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Wang, Shih Han, Chia Chin Chiang, Liren Tsai, Wen Chung Fang, and Jian Long Huang. "The Friction Characteristics and Microscopic Properties of Composite Electroplating Thin Films." Applied Mechanics and Materials 479-480 (December 2013): 60–63. http://dx.doi.org/10.4028/www.scientific.net/amm.479-480.60.

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The development of composite thin film materials bloomed with increasing demand and technical improvements. They have been used in various engineering areas, such as micro-conductor, sensors, and micro-electro-mechanical-system (MEMS) [1-. Nowadays, scientists were able to electroplate silicon carbide thin films directly on metal materials. Silicon carbide has many excellent mechanical properties, such as high Youngs modulus, high melting point, high hardness, and chemical inertness with resistance to high temperature oxidation and creep [4-7]. It is widely utilized in automotive and aerospace industry. Hence, it is very important to improve the durability and reliability of electroplated silicon carbide thin films.

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Nutt, Steven R., David J. Smith, H. J. Kim, and Robert F. Davis. "Interface structures in beta‐silicon carbide thin films." Applied Physics Letters 50, no. 4 (January 26, 1987): 203–5. http://dx.doi.org/10.1063/1.97661.

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Jean, A., M. A. El Khakani, M. Chaker, S. Boily, E. Gat, J. C. Kieffer, H. Pépin, M. F. Ravet, and F. Rousseaux. "Biaxial Young’s modulus of silicon carbide thin films." Applied Physics Letters 62, no. 18 (May 3, 1993): 2200–2202. http://dx.doi.org/10.1063/1.109441.

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Edmond, J. A., J. Ryu, J. T. Glass, and R. F. Davis. "Electrical Contacts to Beta Silicon Carbide Thin Films." Journal of The Electrochemical Society 135, no. 2 (February 1, 1988): 359–62. http://dx.doi.org/10.1149/1.2095615.

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Bellante, J. J., H. Kahn, R. Ballarini, C. A. Zorman, M. Mehregany, and A. H. Heuer. "Fracture toughness of polycrystalline silicon carbide thin films." Applied Physics Letters 86, no. 7 (2005): 071920. http://dx.doi.org/10.1063/1.1864246.

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Parkhutik, V. P., F. Namavar, and E. Andrade. "Photoluminescence from thin porous films of silicon carbide." Thin Solid Films 297, no. 1-2 (April 1997): 229–32. http://dx.doi.org/10.1016/s0040-6090(96)09422-9.

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Kefif, K., Y. Bouizem, A. Belfedal, J. D. Sib, D. Benlakehal, and L. Chahed. "Hydrogen related crystallization in silicon carbide thin films." Optik 154 (February 2018): 459–66. http://dx.doi.org/10.1016/j.ijleo.2017.10.083.

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Laine, A. D., A. M. Mezzasalma, S. Rizzo, and G. Mondio. "Spectrophotometry of ion implanted silicon carbide thin films." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 116, no. 1-4 (August 1996): 338–41. http://dx.doi.org/10.1016/0168-583x(96)00128-0.

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Dissertations / Theses on the topic "Silicon-carbide thin films"

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Deva, Reddy Jayadeep. "Mechanical properties of Silicon Carbide (SiC) thin films." [Tampa, Fla] : University of South Florida, 2008. http://purl.fcla.edu/usf/dc/et/SFE0002615.

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Deva, Reddy Jayadeep. "Mechanical Properties of Silicon Carbide (SiC) Thin Films." Scholar Commons, 2007. https://scholarcommons.usf.edu/etd/210.

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There is a technological need for hard thin films with high elastic modulus. Silicon Carbide (SiC) fulfills such requirements with a variety of applications in high temperature and MEMS devices. A detailed study of SiC thin films mechanical properties was performed by means of nanoindentation. The report is on the comparative studies of the mechanical properties of epitaxially grown cubic (3C) single crystalline and polycrystalline SiC thin films on Si substrates. The thickness of both the Single and polycrystalline SiC samples were around 1-2 µm. Under indentation loads below 500 µ-Newton both films exhibit Elastic contact without plastic deformation. Based on the nanoindentation results polycrystalline SiC thin films have an elastic modulus and hardness of 422 plus or minus 16 GPa and 32.69 plus or minus 3.218 GPa respectively, while single crystalline SiC films elastic modulus and hardness of 410 plus or minus 3.18 Gpa and 30 plus or minus 2.8 Gpa respectively. Fracture toughness experiments were also carried out using the nanoindentation technique and values were measured to be 1.48 plus or minus 0.6 GPa for polycrystalline SiC and 1.58 plus or minus 0.5 GPa for single crystal SiC, respectively. These results show that both polycrystalline SiC thin films and single crystal SiC more or less have similar properties. Hence both single crystal and polycrystalline SiC thin films have the capability of becoming strong contenders for MEMS applications, as well as hard and protective coatings for cutting tools and coatings for MEMS devices.

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Raghavan, Srikanth. "Comparative studies of 6H-SiC surface preparation." Morgantown, W. Va. : [West Virginia University Libraries], 2008. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=5766.

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Thesis (M.S.)--West Virginia University, 2008.
Title from document title page. Document formatted into pages; contains xii, 56 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 51-53).

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Ziemer, Katherine S. "Studies of the initial stage of silicon carbide growth on silicon." Morgantown, W. Va. : [West Virginia University Libraries], 2001. http://etd.wvu.edu/templates/showETD.cfm?recnum=1815.

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Thesis (Ph. D.)--West Virginia University, 2001.
Title from document title page. Document formatted into pages; contains xvi, 217, 2 p. : ill. (some col.). Vita. Includes abstract. Includes bibliographical references (p. 198-207).

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Dusatko, Tomas A. "Silicon carbide RF-MEM resonators." Thesis, McGill University, 2006. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=100250.

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A low-temperature (<300°C) method to fabricate electrostatically actuated microelectromechanical (MEM) clamped-clamped beam resonators has been developed. It utilizes an amorphous silicon carbide (SiC) structural layer and a thin polyimide spacer. The resonator beam is constructed by DC sputtering a tri-layer composite of low-stress SiC and aluminum over the thin polyimide sacrificial layer, and is then released using a microwave O 2 plasma etch. Deposition parameters have been optimized to yield low-stress films (<50MPa), in order to minimize the chance of stress-induced buckling or fracture in both the SiC and aluminum. Characterization of the deposited SiC was performed using several different techniques including scanning electron microscopy, EDX and XRD.
Several different clamped-clamped beam resonator designs were successfully fabricated and tested using a custom built vacuum system, with measured frequencies ranging from 5MHz to 25MHz. A novel thermal tuning method is also demonstrated, using integrated heaters directly on the resonant structure to exploit the temperature dependence of the Young's modulus and thermally induced stresses.

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Khoele, Joshua Relebogile. "Deposition and structural properties of silicon carbide thin films for solar cell applications." University of the Western Cape, 2014. http://hdl.handle.net/11394/4345.

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>Magister Scientiae - MSc
The growth of hydrogenated amorphous silicon carbide (a-SiC:H) thin films deposited by Hot- Wire Chemical Vapour Deposition (HWCVD) for solar cell applications has been studied. The films were characterized for structural properties using Fourier Transform Infrared Spectroscopy FTIR, Elastic Recoil Detection Analysis (ERDA), X-ray Diffraction (XRD), Transmission Electron Microscopy (TEM) and Raman Spectroscopy (RS). A low temperature of the substrate heater maintained at 280 °C was used in this thesis due to the demand of low-cost solar cells based on cheap substrate that require deposition at such low temperatures. In this thesis, we showed that the structural properties of a-SiC:H films are dependent on the filament temperature and also on the CH4 gas flow rate. It was shown that in non-stoichiometric a-SiC:H, hydrogen content throughout the deposited films varies with depth. An attempt is done in this study to determine, for the first time the absorption strength of the C-Hn bonds in the 950 -1050 cm-1 band of the FTIR spectrum. Real-time ERDA was used to determine the hydrogen kinetics parameters in a single temperature ramp; a model based on the solution of the diffusion equation is used for this effect.

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Gulses, Alkan Ali. "Ellipsometric And Uv-vis Transmittance Analysis Of Amorphous Silicon Carbide Thin Films." Master's thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/12605589/index.pdf.

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The fundamentals of the ellipsometry are reviewed in order to point out the strengths and weaknesses of the ellipsometric measurements. The effects of the surface conditions (such as degree of cleanliness, contaminated thin layer, roughness etc&hellip
) on the ellipsometric variables are experimentally studied
the optimum procedures have been determined. Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) thin films are produced by plasma enhanced chemical vapor deposition (PECVD) technique with a circular reactor, in a way that RF power and carbon contents are taken as variables. These samples are analyzed using multiple angle of incidence ellipsometer and uv-vis spectrometer. These measurements have inhomogeneities in optical constants, such as thicknesses, refractive indices and optical energy gaps along the radial direction of the reactor electrode for different power and carbon contents.

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Künle, Matthias [Verfasser]. "Silicon carbide single and multilayer thin films for photovoltaic applications / Matthias Künle." München : Verlag Dr. Hut, 2011. http://d-nb.info/1017353514/34.

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Colston, Gerard B. "Wafer scale heteroepitaxy of silicon carbon and silicon carbide thin films and their material properties." Thesis, University of Warwick, 2017. http://wrap.warwick.ac.uk/103470/.

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For years now, many have believed the solution to reducing the cost of the wide bandgap compound semiconductor silicon carbide (SiC) is to grow its cubic form (3C-SiC) heteroepitaxially on silicon (Si). This has the potential to reduce cost, increase wafer size and integrate SiC with Si technology. After decades of research, 3C-SiC grown on Si is still yet to penetrate the commercial market as the process is plagued with various issues such as very high growth temperatures, thermal stresses, high cost, poor epitaxial material quality and poor scalability to wafer sizes beyond 100 mm diameter. The first section of this thesis starts with a focus on the traditional, high temperature growth of 3C-SiC carried out in the first industrial type SiC based reduced pressure chemical vapour deposition (RP-CVD) reactor installed in a UK University. After the process demonstrated little promise for mass scale implementation into the semiconductor industry, a radical change in strategy was made. The research pivoted away from SiC and instead focussed on silicon carbon alloys (Si1-yCy) with carbon (C) contents in the range of 1-3%. Si1-yCy has a range of applications in strain engineering and reducing contact resistance, differing from 3C- SiC quite significantly. Crystalline alloys with C contents around 1.5% were achieved using an industry standard Si based RP-CVD growth system. Analysis was carried out on the defects that form due to the saturation of C in higher content alloys. The high temperature annealing of Si1-yCy resulted in out diffusion of C and traces of 3C-SiC growth which presented itself as a potential buffer layer for 3C-SiC epitaxy. Through the careful selection of growth precursors and process optimisation, high crystalline quality 3C-SiC was grown heteroepitaxially on Si within the industry standard Si based RP-CVD and in-depth material characterisation has been carried out using a vast range of techniques. High levels of electrically active dopants were incorporated into the 3C-SiC and its electrical properties were investigated. Various investigations were carried out on suspended 3C-SiC and Si1-yCy films including strain and tilt measurements through micro X-ray diffraction and the effect of thickness and doping on their optical properties. The results led to a greater understanding of suspended films and provide a foundation for a number of applications in microelectromechanical systems (MEMS) and optical devices. Further material growth research was carried out on Si1-yCy multilayers, selective epitaxy of 3C-SiC and the growth of 3C-SiC on suspended growth platforms. Each topic presents an interesting area for further research. The research presented demonstrates new, state of the art 3C-SiC heteroepitaxial material and its basic structural, electrical and optical properties. A new low-cost and scalable process has been developed for the heteroepitaxial growth of 3C-SiC on Si substrates up to 100 mm with a clear path to scaling the technology up to 200 mm and beyond. Not only does the developed technology have a high commercial impact, it also paves the way for many interesting future research topics, some of which have been briefly investigated as part of this work.

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Gold, Jeffrey Stephen. "Characterization of a novel methyl radical source and related thin film growth studies." Morgantown, W. Va. : [West Virginia University Libraries], 2000. http://etd.wvu.edu/templates/showETD.cfm?recnum=1787.

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Thesis (Ph. D.)--West Virginia University, 2000.
Title from document title page. Document formatted into pages; contains xi, 108 p. : ill. (some col.) + appendix; 37 p. : ill. Includes abstract. Includes bibliographical references (p. 103-108; p. A-37).

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Books on the topic "Silicon-carbide thin films"

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B, Bergmann Ralf, and Research Signpost (Trivandrum India), eds. Growth, characterization, and electronic applications of si-based thin films. Trivandrum: Research Signpost, 2002.

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Symposium C on Properties and Applications of SiC, Natural and Synthetic Diamond and Related Materials (1990 Strasbourg, France). SiC, natural and synthetic diamond and related materials: Proceedings of Symposium C on Properties and Applications of SiC, Natural and Synthetic Diamond and Related Materials of the 1990 E-MRS Fall conference, Strasbourg, France, November 27-30, 1990. Amsterdam: North-Holland, 1992.

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Amorphous silicon carbide thin films: Deposition, characterization, etching, and piezoresistive sensors applications. Hauppauge, N.Y: Nova Science Publishers, 2011.

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United States. National Aeronautics and Space Administration., ed. Properties of thin films for high temperature flow sensors: Final report for the period ended August 20, 1990. [Washington, DC: National Aeronautics and Space Administration, 1991.

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United States. National Aeronautics and Space Administration., ed. Properties of thin films for high temperature flow sensors: Final report for the period ended August 20, 1990. [Washington, DC: National Aeronautics and Space Administration, 1991.

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G, Pensl, and International Conference on Silicon Carbide and Related Materials (7th : 1998 : Stockholm, Sweden), eds. Silicon carbide, III-nitrides and related materials: ICSCIII-N'97 : Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Uetikon-Zurich, Switzerland: Trans Tech Publications, 1998.

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International Conference on Silicon Carbide and Related Materials (1999 Research Triangle Park, N.C.). Silicon carbide and related materials--1999: ICSCRM'99 : proceedings of the International Conference on Silicon Carbide and Related Materials--1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. Edited by Carter Calvin H, Devaty Robert Philip 1954-, and Rohrer Gregory S. Uetikon-Zurich, Switzerland: Trans Tech Publications, 2000.

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Slafer, Dennis. Novel R2R manufacturable photonic-enhanced thin film solar cells: January 28, 2010 - January 31, 2011. Golden, Colo: National Renewable Energy Laboratory, 2012.

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G, Spencer M., and International Conference on SiC and Related Materials (5th : 1993 : Washington, D.C.), eds. Silicon carbide and related materials: Proceedings of the fifth conference, 1-3 November 1993, Washington, DC, USA. Bristol: Institute of Physics Pub., 1994.

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J, Bauer Anton, ed. Silicon carbide and related materials 2009: Selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. Stafa-Zurich, Switzerland: Trans Tech Publications, 2010.

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Book chapters on the topic "Silicon-carbide thin films"

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Lindner, J. K. N. "Formation of SiC Thin Films by Ion Beam Synthesis." In Silicon Carbide, 251–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_11.

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Bosi, Matteo, Marco Negri, and Giovanni Attolini. "Cubic Silicon Carbide Thin Films Deposition." In New Frontiers in Nanochemistry, 149–54. Includes bibliographical references and indexes. | Contents: Volume 1. Structural nanochemistry – Volume 2. Topological nanochemistry – Volume 3. Sustainable nanochemistry.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429022944-11.

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Onuma, Y., K. Kamimura, Y. Nagura, K. Koike, and S. Yonekubo. "Polycrystalline Silicon-Silicon Carbide Thin Films Produced by Plasma Enhanced CVD." In Springer Proceedings in Physics, 69–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84402-7_11.

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Pan, W. S., and A. J. Steckl. "Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films." In Springer Proceedings in Physics, 217–23. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-75048-9_43.

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Tran, N. T. "Amorphous Silicon Carbide Thin Films Produced in the Glow Discharge Deposition System." In Amorphous and Crystalline Silicon Carbide and Related Materials, 134–41. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93406-3_20.

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Kong, H. S., J. A. Edmond, J. W. Palmour, J. T. Glass, and R. F. Davis. "Epitaxial Growth, High Temperature Ion Implantation and MOSFET Fabrication in Monocrystalline β-SiC Thin Films." In Amorphous and Crystalline Silicon Carbide and Related Materials, 180–85. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93406-3_27.

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Venkataramesh, B., and Nilesh J. Vasa. "Synthesis of Polycrystalline Silicon Carbide (SiC) Thin Films Using Pulsed Laser Deposition." In ZnO Nanocrystals and Allied Materials, 217–32. New Delhi: Springer India, 2013. http://dx.doi.org/10.1007/978-81-322-1160-0_10.

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De Maria, G., D. Ferro, S. Barinov, L. D. Alessio, and R. Teghil. "Hardness of Titanium Carbide Thin Films Deposited on Silicon by Laser Ablation." In Fracture Mechanics of Ceramics, 457–67. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4757-4019-6_35.

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Weingärtner, Roland, Oliver Erlenbach, F. de Zela, Albrecht Winnacker, Isabel Brauer, and Horst P. Strunk. "Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb³⁺, Dy³⁺ and Eu³⁺) a-SiC Thin Films Prepared by rf Magnetron Sputtering." In Silicon Carbide and Related Materials 2005, 663–66. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.663.

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Fukazawa, T., K. Sasaki, and S. Furukawa. "Preparation of Microcrystalline Silicon Carbide Thin Films for the Emitter of Si HBTs." In Springer Proceedings in Physics, 49–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-75048-9_10.

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Conference papers on the topic "Silicon-carbide thin films"

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SOUKIASSIAN, P. G. "1D-NANOSTRUCTURES ON SILICON CARBIDE THIN FILMS." In Proceedings of the International Workshop. WORLD SCIENTIFIC, 2004. http://dx.doi.org/10.1142/9789812702876_0016.

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Ostling, Mikael, Sang-Mo Koo, Sang-Kwon Lee, Carl-Mikael Zetterling, and Alexander Grishin. "Thin films in silicon carbide semiconductor devices." In SPIE Proceedings, edited by Junhao Chu, Zongsheng Lai, Lianwei Wang, and Shaohui Xu. SPIE, 2004. http://dx.doi.org/10.1117/12.607264.

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Si, Shangzhuo, Huidong Yang, Bo Huang, Baoyu Xu, Xinghan Deng, Jundai Shi, and Chubin Ma. "Study of Boron-Doped Silicon Carbide Thin Films." In 2010 Symposium on Photonics and Optoelectronics (SOPO 2010). IEEE, 2010. http://dx.doi.org/10.1109/sopo.2010.5504009.

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Kim, H. J., and R. F. Davis. "Optical Characterization Of Monocrystalline Silicon Carbide Thin Films." In Semiconductor Conferences, edited by Orest J. Glembocki, Fred H. Pollak, and Jin-Joo Song. SPIE, 1987. http://dx.doi.org/10.1117/12.940912.

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Rui, Yunjun, Shuxin Li, Chao Song, Hongcheng Sun, Tao Lin, Yu Liu, Jun Xu, Wei Li, and Kunji Chen. "Electroluminescence from Si nanocrystals by annealing amorphous silicon carbide films." In Seventh International Conference on Thin Film Physics and Applications, edited by Junhao Chu and Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888225.

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Kole, Arindam, and Partha Chaudhuri. "Controlled growth of nanocrystalline silicon within amorphous silicon carbide thin films." In SOLID STATE PHYSICS: Proceedings of the 58th DAE Solid State Physics Symposium 2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4872630.

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Matsuda, Yusuke, Sean W. King, Jeff Bielefeld, and Reinhold H. Dauskardt. "Mechanical properties of hydrogenated amorphous silicon carbide thin films." In 2010 IEEE International Interconnect Technology Conference - IITC. IEEE, 2010. http://dx.doi.org/10.1109/iitc.2010.5510305.

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Targove, J. D., and L. G. Sills. "Deposition of amorphous hydrogenated silicon carbide thin films by ion beam sputtering." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.tupp1.

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Amorphous hydrogenated silicon carbide thin films have been investigated as an adjustable refractive-index material for visible and infrared optical coatings. The films were deposited by the ion beam sputtering of a silicon target with an argon-methane ion beam from a Kaufman-type ion source. Adjusting the argon-to-methane ratio in the ion beam allows the film stoichiometry and optical constants to be varied over a wide range. Rutherford backscattering spectrometry and nuclear reaction analysis were used to determine stoichiometries, and spectroscopic ellipsometry provides information on the optical constants over the visible and near-infrared spectral region. Infrared absorption bands also provide information on the amorphous networking in the films.

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Peng, Xiaofeng, Yuzhi Zhang, Lixin Song, and Xingfang Hu. "Preparation and characterization of silicon carbide thin films synthesized by rf reactive sputtering." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408436.

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Kole, Arindam, and Partha Chaudhary. "Growth of silicon nanocrystallites in amorphous silicon carbide thin films by aluminum induced crystallization." In PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS AND MATERIAL SCIENCE: RAM 2013. AIP, 2013. http://dx.doi.org/10.1063/1.4810150.

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Reports on the topic "Silicon-carbide thin films"

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Chiang, Tai C. Electronic Struture and Quantum Effects of Thin Metal Film Systems Based on Silicon Carbide. Fort Belvoir, VA: Defense Technical Information Center, May 2013. http://dx.doi.org/10.21236/ada577620.

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Habermehl, Scott D., Peggy J. Clews, Sasha Summers, and Sukwon Choi. Computational and Experimental Characterization of Aluminum Nitride-Silicon Carbide Thin Film Composites for High Temperature Sensor Applications. Office of Scientific and Technical Information (OSTI), December 2014. http://dx.doi.org/10.2172/1490541.

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