Journal articles: 'Silicon carbide Effect of high temperatures on'

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Sun, Wenyue, Zhiliang Huang, Changlian Chen, and Song Chen. "Preparation of Silicon Carbide Film by Composite Sintering of Silicon Nitride and Silicon Carbide." Journal of Physics: Conference Series 2390, no. 1 (December 1, 2022): 012001. http://dx.doi.org/10.1088/1742-6596/2390/1/012001.

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Abstract Graphite can be protected by coating it with a silicon carbide film. However, studies on the effects of different coating methods and process parameters on the thickness and bond strength of the films are not yet mature. In this paper, silicon nitride (Si3N4) and silicon carbide (SiC) are used as raw materials, and SiC films are successfully prepared on the surface of graphite substrate by composite sintering at high temperatures. The phase and microstructure of SiC films were characterized by X-ray diffractometer (XRD) and scanning electron microscope (SEM), respectively, and the effect and mechanism of sintering temperature on the formation of SiC films were investigated. The results show that Si3N4 and SiC decompose under high temperatures to generate silicon vapor and carbon-silicon gas molecules, which migrate to the graphite surface to react with C and recrystallize to form a SiC film. The main crystal phase of the SiC film at high temperature is 3C-SiC, the spherical SiC grains with smooth surfaces and small size gradually grow into regular hexagonal grains, and the SiC film is denser and thicker.

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Zvonarev, E. V., A. Ph Ilyushchanka, Zh A. Vitko, V. A. Osipov, and D. V. Babura. "Effect of reaction sintering modes on the structure and properties of carbide ceramics." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 63, no. 4 (January 12, 2019): 407–15. http://dx.doi.org/10.29235/1561-8358-2018-63-4-407-415.

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Experimental studies of the structure, phase composition, physical and mechanical properties of the reaction-sintered ceramics based on silicon carbide and boron obtained by reaction sintering have been performed. It has been shown that the properties of the reaction-sintered ceramics based on carbides are largely determined by the quality of impregnation of the porous carbide frame with silicon, which depends on the total and open porosity, shape and size of the pores of the compact, the composition of the charge from the carbide powder. High-temperature sintering, followed by impregnation of the carbide frame with silicon and its interaction with the carbon constituent of the frame, largely determines the properties of the material. The main task in the implementation of this process is to create conditions that ensure the full filling of pores in the initial compact during impregnation with silicon melt and, secondly, maximum activation of chemical interaction between the melt of silicon, carbon and other components that compose the charge. A complex of studies on the effect of compacting pressure and annealing temperature of the charge based on silicon carbide and boron powders with the addition of graphite on the pore structure of the compact and the quality of its impregnation with a silicon melt has been carried out in this work. It has been shown that the density, bending strength, hardness of ceramics based on silicon carbide and boron carbide obtained by reaction sintering are increased with a rise in compacting pressure of carbide frames. The optimum porosity of the carbide frame is 25–30 %; the pore size is 1.0–1.5 μm. It has been also demonstrated that ceramics based on boron carbide and boron carbide with 50 % silicon carbide impregnated with silicon at high-temperature sintering has higher strength and hardness values than those based on silicon carbide due to higher adhesion strength at the interface of boron carbide particles and binder, caused by the dissolution of boron carbide in the silicon melt and the formation of complex carbide particles on the surface.

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Dang, Dinh Lam, Matthieu Urbain, and Stephane Rael. "Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling." Materials Science Forum 963 (July 2019): 592–95. http://dx.doi.org/10.4028/www.scientific.net/msf.963.592.

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Silicon carbide (SiC) MOSFET features low on-resistance per area even at high temperatures compared to a silicon (Si) counterpart with the same voltage rating. However, SiC MOSFET exhibits a unique behavior over operating temperatures due to the presence of interface trap charges. The effect of temperature on the on-resistance of SiC MOSFET has been studied through experimental measurements at difference temperatures from - 30 °C to 150 °C. The results show that high contribution of channel resistance is the critical factor to determine the behavior of SiC MOSFET with temperature.

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Mousa, Habeeb, and Kasif Teker. "High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications." Microelectronics International 38, no. 2 (August 4, 2021): 78–83. http://dx.doi.org/10.1108/mi-05-2021-0043.

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Purpose The purpose of this study is to present a systematic investigation of the effect of high temperatures on transport characteristics of nitrogen-doped silicon carbide nanowire-based field-effect transistor (SiC-NWFET). The 3C-SiC nanowires can endure high-temperature environments due to their wide bandgap, high thermal conductivity and outstanding physical and chemical properties. Design/methodology/approach The metal-organic chemical vapor deposition process was used to synthesize in-situ nitrogen-doped SiC nanowires on SiO2/Si substrate. To fabricate the proposed SiC-NWFET device, the dielectrophoresis method was used to integrate the grown nanowires on the surface of pre-patterned electrodes onto the SiO2 layer on a highly doped Si substrate. The transport properties of the fabricated device were evaluated at various temperatures ranging from 25°C to 350°C. Findings The SiC-NWFET device demonstrated an increase in conductance (from 0.43 mS to 1.2 mS) after applying a temperature of 150°C, and then a decrease in conductance (from 1.2 mS to 0.3 mS) with increasing the temperature to 350°C. The increase in conductance can be attributed to the thermionic emission and tunneling mechanisms, while the decrease can be attributed to the phonon scattering. Additionally, the device revealed high electron and hole mobilities, as well as very low resistivity values at both room temperature and high temperatures. Originality/value High-temperature transport properties (above 300°C) of 3C-SiC nanowires have not been reported yet. The SiC-NWFET demonstrates a high transconductance, high electron and hole mobilities, very low resistivity, as well as good stability at high temperatures. Therefore, this study could offer solutions not only for high-power but also for low-power circuit and sensing applications in high-temperature environments (∼350°C).

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Chailloux, Thibaut, Cyril Calvez, Dominique Tournier, and Dominique Planson. "Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature." Materials Science Forum 821-823 (June 2015): 814–17. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.814.

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The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.

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Weng, M. H., A. D. Murphy, D. T. Clark, D. A. Smith, R. F. Thompson, R. A. R. Young, E. P. Ramsay, H. K. Chan, and A. B. Horsfall. "Gate Stack Engineering for High Temperature Silicon Carbide CMOS ICs." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000033–36. http://dx.doi.org/10.4071/hiten-session1-paper1_6.

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The potential to thermally grow SiO2 on silicon carbide has resulted in it becoming the technology of choice to realise high temperature CMOS circuits. The challenge to achieve a high quality gate stack relies on engineering the metal-insulator-semiconductor interfaces to enable reliable high temperature functionality. Here we describe the effect of different process conditions for the formation of the dielectric layer on the characteristics of the resulting devices. The operating characteristics at elevated temperatures depend critically on the quality of the gate stack. Therefore a systematic evaluation of the intrinsic properties of the gate stack and data from reliability tests are needed.

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Suyama, Shoko, and Yoshiyasu Itoh. "High-Strength Reaction-Sintered Silicon Carbide for Large-Scale Mirrors - Effect of Surface Oxide Layer on Bending Strength." Advances in Science and Technology 63 (October 2010): 374–82. http://dx.doi.org/10.4028/www.scientific.net/ast.63.374.

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Reaction-sintered silicon carbide of 800 MPa class bending strength had been newly developed. The developed silicon carbide showed good rigidity, high thermal conductivity, and high density, like a conventional sintered silicon carbide. The developed silicon carbide is one of the most attractive materials for large-scale ceramic structures because of its low processing temperature, good shape capability, low-cost processing and high purity. We had fabricated some lightweight space mirrors, such as a high-strength reaction-sintered silicon carbide mirror of 650 mm in diameter. In this study, experiments were conducted to investigate the effect of annealing on the bending strength of high-strength reaction-sintered silicon carbide. The annealing heat treatments were carried out at 1073 K, 1273 K, and 1473 K in an air atmosphere. The maximum bending strength of 1091 MPa at room temperature was achieved by the annealing heat-treatment at 1273 K for 10 h in air. We confirmed that annealing heat treatment was effective to improve the bending strength of reaction-sintered silicon carbide by inducing compressive residual stress at the surface oxide layer.

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Lee, Te-Hao, Swarup Bhunia, and Mehran Mehregany. "Electromechanical Computing at 500°C with Silicon Carbide." Science 329, no. 5997 (September 9, 2010): 1316–18. http://dx.doi.org/10.1126/science.1192511.

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Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300°C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, microwave operating frequencies, radiation hardness, and nanoscale dimensions. Here, we report a microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500°C with ultralow leakage current.

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Zhao, Jian H. "Silicon Carbide Power Field-Effect Transistors." MRS Bulletin 30, no. 4 (April 2005): 293–98. http://dx.doi.org/10.1557/mrs2005.76.

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AbstractSilicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.

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Ouaida, Rémy, Cyril Buttay, Anhdung Hoang, Raphaël Riva, Dominique Bergogne, Hervé Morel, Christophe Raynaud, and Florent Morel. "Thermal Runaway Robustness of SiC VJFETs." Materials Science Forum 740-742 (January 2013): 929–33. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.929.

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Silicon Carbide (SiC) Junction-Field Effect Transistors (JFETs) are attractive devices for power electronics. Their high temperature capability should allow them to operate with a reduced cooling system. However, experiments described in this paper conclude to the existence of runaway conditions in which these transistors will reach destructive temperatures.

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Jaworski, J., R. Kluz, and T. Trzepieciński. "Influence of Heat Treatment on Content of the Carbide Phases in the Microstructure of High-Speed Steel." Archives of Foundry Engineering 17, no. 3 (September 1, 2017): 59–62. http://dx.doi.org/10.1515/afe-2017-0091.

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Abstract This article presents the results of investigations of the effect of heat treatment temperature on the content of the carbide phase of HS3-1-2 and HS6-5-2 low-alloy high-speed steel. Analysis of the phase composition of carbides is carried out using the diffraction method. It is determined that with increasing austenitising temperature, the intensification of dissolution of M6C carbide increases. As a result, an increase in the grain size of the austenite and the amount of retained austenite causes a significant reduction in the hardness of hardened steel HS3-1-2 to be observed. The results of diffraction investigations showed that M7C3 carbides containing mainly Cr and Fe carbides and M6C carbides containing mainly Mo and W carbides are dissolved during austenitisation. During austenitisation of HS3-1-2 steel, the silicon is transferred from the matrix to carbides, thus replacing carbide-forming elements. An increase in a degree of tempering leads to intensification of carbide separation and this process reduce the grindability of tested steels.

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Mesquita, Rafael Agnelli, Celso Antonio Barbosa, E. Valencia Morales, and H. J. Kestenbach. "Secondary Carbide Precipitation in Low Silicon Hot Work Tool Steels." Materials Science Forum 636-637 (January 2010): 612–17. http://dx.doi.org/10.4028/www.scientific.net/msf.636-637.612.

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A reduction from 1.0 to 0.3%Si has recently been shown to improve mechanical properties of H11-type hot work tool steels. The present paper shows that an important improvement in toughness can be explained by the effect of Si content on the precipitation sequence of secondary carbides during tempering after quenching. Carbide particle distributions were observed and identified by electron microscopy, allowing to relate the effect of Si on mechanical properties directly to its effect on cementite and subsequent alloy carbide formation during high temperature tempering.

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Hamilton, Dean, Liam Mills, Steve Riches, and Philip Mawby. "Performance and Reliability of SiC dies, Die attach and Substrates for High Temperature Power Applications up to 300°C." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000200–000207. http://dx.doi.org/10.4071/hiten-session6-paper6_2.

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The recent commercial availability of silicon carbide power semiconductor devices are theoretically capable of operating at temperatures well beyond the limits of silicon devices and have generated an interest in developing high temperature capable packaging solutions to match. In this work, the performance and reliability of a number of commercially available silicon carbide power MOSFET dies from multiple vendors was determined for die temperatures up to 350°C. Although these results have demonstrated a number of aging effects and very high on-state resistances at high temperatures, it appears that these devices can perform reliably even in air atmospheres for 100 hours or more at 350°C. In addition, commercially available DBC type ceramic-based substrates have been evaluated for their thermal cycling performance and candidate high temperature capable die attach materials including silver sinter paste and tin and gold-tin pre-form based transient liquid phase types have also been evaluated. These results have demonstrated that the active metal brazed substrates, both copper and aluminium variants, in conjunction with the silicon carbide dies and silver sinter die attach may serve as the basis for high temperature power modules, and may be operated reliably in thermal cycled applications and in air atmospheres up to 300°C. Due to large threshold voltage shift of the SiC MOSFETs at these temperatures, it may be necessary to implement a negative gate bias capability. This work has been carried out under the Innovate UK supported project HITEC, led by Prodrive and also including The University of Warwick, GE Aviation Systems, Ricardo, TT Electronics Semelab, Diamond Hard Surfaces and GaN Systems.

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Bhatnagar, Praneet, Nicolas G. Wright, Alton B. Horsfall, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A. G. Munday, and A. J. Hydes. "High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes." Materials Science Forum 556-557 (September 2007): 987–90. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.987.

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Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper presents circuit applications of normally-on SiC VFETs at temperatures exceeding 300°C. A DC-DC boost converter using a 4H-SiC VJFET and a SiC Schottky Diode was fabricated and operated up to 327°C. A power amplifier achieved a voltage gain of 3.88 at 27°C dropping to 3.16 at 327°C. This 20 % reduction is consistent with the fall in transconductance of the device.

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Li, Xin Wei, Dian Li Qu, Zhi Jian Li, Feng Wu, and Na Xu. "Effect of Three Catalysts on Synthesis of Silicon Carbide Whiskers with Silica Fume." Advanced Materials Research 284-286 (July 2011): 496–99. http://dx.doi.org/10.4028/www.scientific.net/amr.284-286.496.

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Silicon carbide whiskers were prepared by carbothermal reduction. Materials are silica fume and carbon black, Si, Fe2O3, Si-Fe as catalyst, the phase composition and microstructure of compound products were investigated by XRD and SEM, effect of synthesized temperature, kind of catalysts, amount of catalyst were discussed. The results showed that: Silicon carbide whiskers were synthesized by silica fume and black carbon, add catalyst, synthesis temperature is 1550°C. Synthesis effect of silicon carbide whiskers with Si is better than Si-Fe and Fe2O3. Adding amount of Si is 2%, synthesized rate of silicon carbide whiskers is high, it is straight, length is 10~15μm, diameter is 0.1~0.3μm.

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Senyut, V. T. "Sintering of composite materials for tool appointment, based on impact diamonds, under high pressure and temperatures." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 66, no. 1 (April 2, 2021): 47–57. http://dx.doi.org/10.29235/1561-8358-2021-66-1-47-57.

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The article presents the results of a study of composite materials based on diamond-lonsdaleite abrasive (DLA) and various binders (Fe–Ti mechanocomposite, silicon carbide SiC). A metal-matrix composite material with a multimodal nano- and microlevel structure, characterized by increased adhesion of diamond grains to the binder, is obtained on the basis of impact diamonds and a Fe–Ti nano-mechanical composite. It is shown that the use of impact diamonds in comparison with synthetic diamonds makes it possible to reduce the pressure of thermobaric treatment by 30–50 % at the same sintering temperatures. The use of Fe–Ti–DLA composites in the process of magnetic-abrasive polishing (MAP) makes it possible to increase the removal rate of material based on silicon by 1.5–2 times and reduce the processing time by 30 % compared to ferroabrasive powder (FAP) based on synthetic diamonds. The effect of adding of silicon carbide on the process of obtaining a superhard composite material impact diamond – SiC is investigated. It is found that adding of SiC helps to reduce the defectiveness of the material and increase the homogeneity of its structure in comparison with the material without adding of a binder. In this case, an increase in the content of SiC and Si also leads to an inversion of the structure type of the superhard composite from polycrystalline to matrix. It is found that the additional use of amorphous soot and boron affects the refinement of the matrix structure of the composite material due to the formation of boron carbide and secondary finely dispersed silicon carbide.

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Ruddy, Frank H., Laurent Ottaviani, Abdallah Lyoussi, Christophe Destouches, Olivier Palais, and Christelle Reynard-Carette. "Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments." EPJ Web of Conferences 253 (2021): 11003. http://dx.doi.org/10.1051/epjconf/202125311003.

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Silicon carbide (SiC) semiconductor is an ideal material for solid-state nuclear radiation detectors to be used in high-temperature, high-radiation environments. Such harsh environments are typically encountered in nuclear reactor measurement locations as well as high-level radioactive waste and/or “hot” dismantlingdecommissioning operations. In the present fleet of commercial nuclear reactors, temperatures in excess of 300 °C are often encountered, and temperatures up to 800 °C are anticipated in advanced reactor designs. The wide bandgap for SiC (3.27 eV) compared to more widely used semiconductors such as silicon (1.12 eV at room temperature) has allowed low-noise measurements to be carried out at temperatures up to 700 °C. The concentration of thermally induced charge carriers in SiC at 700 °C is about four orders of magnitude less than that of silicon at room temperature. Furthermore, SiC radiation detectors have been demonstrated to be much more resistant to the effects of radiation-induced damage than more conventional semiconductors such as silicon, germanium, or cadmium zinc telluride (CZT), and have been demonstrated to be operational after extremely high gamma-ray, neutron, and charged-particle doses. The purpose of the present review is to provide an updated state of the art for SiC neutron detectors and to explore their applications in harsh high-temperature, high-radiation nuclear reactor applications. Conclusions related to the current state-of-the-art of SiC neutron detectors will be presented, and specific ideal applications will be discussed.

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Huang, Jing-Jia, Christian Militzer, Charles Wijayawardhana, Urban Forsberg, and Henrik Pedersen. "Conformal and superconformal chemical vapor deposition of silicon carbide coatings." Journal of Vacuum Science & Technology A 40, no. 5 (September 2022): 053402. http://dx.doi.org/10.1116/6.0001909.

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The approaches to conformal and superconformal deposition developed by Abelson and Girolami for a low-temperature, low-pressure chemical vapor deposition (CVD) setting relevant for electronic materials in micrometer or submicrometer scale vias and trenches, are tested here in a high-temperature, moderate pressure CVD setting relevant for hard coatings in millimeter-scale trenches. Conformal and superconformal deposition of polycrystalline silicon carbide (SiC) can be accomplished at deposition temperatures between 950 and 1000 °C with precursor partial pressure higher than 20 Pa and an optional minor addition of HCl as a growth inhibitor. The conformal deposition at low temperatures is ascribed to slower kinetics of the precursor consumption along the trench depth, whereas the impact of high precursor partial pressure and addition of inhibitor is attributable to surface site blocking. With the slower kinetics and the site blocking from precursor saturation leading the growth to nearly conformal and the possibly preferential inhibition effect near the opening than at the depth, a superconformal SiC coating with 2.6 times higher thickness at the bottom compared to the top of a 1 mm trench was achieved.

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Fan, Bing Bing, Huan Huan Guo, Jian Li, Hai Long Wang, Ke Bao, and Rui Zhang. "The Effect of SiC Surface Treatment on the Interface Bonding Behavior of SiC/Cu Composite Particles." Key Engineering Materials 512-515 (June 2012): 951–54. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.951.

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The SiC/Cu composite is one of the "structural-functional" materials. It shows good mechanical properties and very high thermal, high electrical conductivity etc. But the co-dispersion, wetting and bonding between SiC and Cu interface are of practical importance in the preparation of SiC/Cu composites. In this work, surface treatment techniques such as high-temperature oxidation, acid dipping and alkaline wash were adopted separately on silicon carbide particles, in order to improve the wettability and physical and chemical compatibility between silicon carbide and copper, then we used the replacement reaction method and decomposition-reduction reaction method to generate Cu coating on the surface of silicon carbide. The results shown that, the surface of silicon carbide particle which treated by alkaline wash was cleaner and more rough than that only treated by high-temperture oxidation, moreover, the specific surface of the particle was increased, which resulted in a compact layer of Cu coating. for the same silicon carbide particles, the effect of the Cu coating prepared by decomposition reaction method was better than that by reduction reaction method.

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Francis, A. Matthew, Jim Holmes, Nick Chiolino, Matthew Barlow, Affan Abbasi, and H. Alan Mantooth. "High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (January 1, 2016): 000242–48. http://dx.doi.org/10.4071/2016-hitec-242.

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Abstract In the last decade, significant effort has been expended towards the development of reliable, high-temperature integrated circuits. Designs based on a variety of active semiconductor devices including junction field effect transistors and metal-oxide-semiconductor field effect transistors have been pursued and demonstrated. More recently1,2, advances in low-power complementary MOS devices have enabled the development of highly-integrated digital, analog and mixed-signal integrated circuits. The results of elevated temperature testing (as high as 500°C) for extended periods (up to 100 hours) of several building block circuits will be presented. These designs, created using the Raytheon UK's HiTSiC® CMOS process, present the densest, lowest-power integrated circuit technology capable of operating at these extreme temperatures for any period of time. Based on these results, Venus nominal temperature (470°C) SPICE m°dels and gate-level timing models were created using parasitic extracted simulations. The complete CMOS digital gate library is suitable for logic synthesis and lays the foundation for complex integrated circuits, such as a microcontroller in SiC-CMOS, with an eye for Venus as well as terrestrial applications.

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Nguyen, Tuan-Khoa, Hoang-Phuong Phan, Toan Dinh, Abu Riduan Md Foisal, Nam-Trung Nguyen, and Dzung Viet Dao. "High-temperature tolerance of the piezoresistive effect in p-4H-SiC for harsh environment sensing." Journal of Materials Chemistry C 6, no. 32 (2018): 8613–17. http://dx.doi.org/10.1039/c8tc03094d.

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4H-silicon carbide based sensors are promising candidates for replacing prevalent silicon-based counterparts in harsh environments owing to their superior chemical inertness, high stability and reliability.

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Wei, Jun Hu, Xu Ran, and Han Ying. "Effect of Tempering Temperature on Microstructure and Properties of Low Carbon High Silicon Alloy Steel Treated by Q-P-T Process." Materials Science Forum 993 (May 2020): 592–96. http://dx.doi.org/10.4028/www.scientific.net/msf.993.592.

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The mechanical properties and microstructure of low-carbon high-silicon alloy steel were examined under various tempering temperatures using the quenching, partitioning and tempering (Q–P–T) process. The performance changed with the variation in tempering temperature. The results show that the microstructure of low carbon high silicon alloy steel treated by Q-P-T process was mainly ferrite, martensite, carbide-free bainite and film-like retained austenite. This alloys exhibited good mechanical properties at tempering temperature of 300 °C. The product of strength and elongation were 33.7 GPa%. Specifically, the Ultimate tensile strength were 1508 MPa, the yield strength were 1048 MPa, and the elongation were 22.4%. At this temperature of 300 °C, the volume fraction of retained austenite reached 10.4%.

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Козловский, В. В., O. Корольков, К. С. Давыдовская, A. А. Лебедев, М. Е. Левинштейн, Н. Слепчук, А. М. Стрельчук, and J. Toompuu. "Влияние температуры протонного облучения на характеристики мощных высоковольтных карбид-кремниевых диодов Шоттки." Письма в журнал технической физики 46, no. 6 (2020): 35. http://dx.doi.org/10.21883/pjtf.2020.06.49163.18072.

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For the first time, the effect of irradiation at high temperature (“hot irradiation”) by protons on the capacitance – voltage and current – voltage characteristics of silicon carbide based semiconductor devices was studied. We investigated commercial high-voltage (blocking voltage of 1700 V) integrated 4H-SiC Schottky diodes. Irradiation was carried out by protons with an energy of 15 MeV at temperatures of 20-400 ° C. It has been established that the most sensitive to radiation parameter determining the radiation resistance of devices is the ohmic resistance of the base, which increases monotonically with increasing radiation dose D. It is shown that during “hot” irradiation, the radiation resistance of diodes significantly exceeds the resistance of diodes in low-temperature (“cold”) irradiation . It was concluded that, with increasing irradiation temperature, the rate of formation of deep centers in the upper half of the band gap of silicon carbide decreases.

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Murathan, Ömer Faruk, Kemal Davut, and Volkan Kilicli. "Effect of austenitizing temperatures on the microstructure and mechanical properties of AISI 9254 steel." Materials Testing 63, no. 1 (January 1, 2021): 48–54. http://dx.doi.org/10.1515/mt-2020-0007.

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Abstract In this study, the effect of austenitizing temperatures and low-temperature isothermal heat treatment (below martensite start temperature) on the microstructure and mechanical properties of AISI 9254 high silicon spring steel has been investigated. Experimental studies show that ultra-fine carbide-free bainite, tempered martensite and carbon enriched retained austenite could be observed in isothermally heat-treated samples where the as-received sample consisted of fine pearlite. A high tensile strength of ~2060 MPa, a total elongation of ~8 %, and absorbed energy of 105 J were achieved in a commercial high-Si steel by austempering below the Ms temperature. A good combination of strength and ductility has been obtained in prolonged austempering below the martensite start temperature (225 °C) from an austenitizing temperature of 870 °C.

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Yao, Longhui, Liang Wang, Xiaojiao Song, Ran Cui, Binqiang Li, Qi Lv, Liangshun Luo, Yanqing Su, Jingjie Guo, and Hengzhi Fu. "Microstructure Evolution and Toughening Mechanism of a Nb-18Si-5HfC Eutectic Alloy Created by Selective Laser Melting." Materials 15, no. 3 (February 4, 2022): 1190. http://dx.doi.org/10.3390/ma15031190.

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Because of their superior mechanical performance at ultra-high temperatures, refractory niobium–silicon-based alloys are attractive high-temperature structural alloys, particularly as structural components in gas turbine engines. However, the development of niobium–silicon-based alloys for applications is limited because of the trade-off between room temperature fracture toughness and high-temperature strength. Here, we report on the fabrication of a Nb-18Si alloy with dispersion of hafnium carbide (HfC) particles through selective laser melting (SLM). XRD and SEM-BSE were used to examine the effects of scanning speed on the microstructure and the phase structure of the deposited Nb-18Si-5HfC alloy. The results show that when the scanning speed rises, the solid solubility of the solid solution improves, the interlamellar spacing of eutectics slowly decrease into nano-scale magnitude, and the corresponding hafnium carbide distribution becomes more uniform. We also discover the hafnium carbide particles dispersion in the inter-lamella structure, which contributes to its high fracture toughness property of 20.7 MPa∙m1/2 at room temperature. Hardness and fracture toughness are simultaneously improved because of the control of microstructure morphology and carbide distribution.

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Samal, Birajendu Prasad, Manas Kumar Samantaray, Om Prakash Samal, and Subarna Keshari Singh. "Dry Sliding Wear Analysis of Composite Prepared by A Novel Method with Different Furnace Temperature." International Journal for Research in Applied Science and Engineering Technology 10, no. 8 (August 31, 2022): 1100–1103. http://dx.doi.org/10.22214/ijraset.2022.46358.

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Abstract: Particulate reinforced Composites made of aluminum and Silicon Carbide may be considered as suitable replacement for steel in industrial and automotive applications. The high strength and good wear properties makes the composites useful. Magnesium is used to increase the wet properties of Silicon Carbide to mix with aluminum. The furnace temperature effect during the composite manufacturing was studied experimentally to test for wear properties .The manufactured composites in liquid route were tested in DUCOM wear testing machine at sliding speed of 2.5 m/s with load 30N and at different sliding distance in atmospheric conditions . The furnace temperatures are maintained at 7000C, 8000C and 9000C for composite preparations. The samples are tested for wear behavior and specific wear rate was compared for different composites.

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Holmes, Jim, A. Matthew Francis, Ian Getreu, Matthew Barlow, Affan Abbasi, and H. Alan Mantooth. "Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application." Journal of Microelectronics and Electronic Packaging 13, no. 4 (October 1, 2016): 143–54. http://dx.doi.org/10.4071/imaps.527.

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In the last decade, significant effort has been expended toward the development of reliable, high-temperature integrated circuits. Designs based on a variety of active semiconductor devices including junction field-effect transistors and metal-oxide-semiconductor (MOS) field-effect transistors have been pursued and demonstrated. More recently, advances in low-power complementary MOS (CMOS) devices have enabled the development of highly integrated digital, analog, and mixed-signal integrated circuits. The results of elevated temperature testing (as high as 500°C) of several building block circuits for extended periods (up to 100 h) are presented. These designs, created using the Raytheon UK's HiTSiC® CMOS process, present the densest, lowest-power integrated circuit technology capable of operating at extreme temperatures for any period. Based on these results, Venus nominal temperature (470°C) transistor models and gate-level timing models were created using parasitic extracted simulations. The complete CMOS digital gate library is suitable for logic synthesis and lays the foundation for complex integrated circuits, such as a microcontroller. A 16-bit microcontroller, based on the OpenMSP 16-bit core, is demonstrated through physical design and simulation in SiC-CMOS, with an eye for Venus as well as terrestrial applications.

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Cheng, Peng, Guan Jun Qiao, Di Chen Li, Ji Qiang Gao, Hong Jie Wang, and Zhi Hao Jin. "RB-SiC Ceramics Derived from the Phenol Resin Added with Starch." Key Engineering Materials 336-338 (April 2007): 1144–47. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.1144.

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Reaction bonded silicon carbide (RB-SiC) was fabricated by phenol resin, starch, solidified agent and silicon powder through the following steps: first, carbonizing at high temperature for 7-9h, infiltrating silicon at 1450-1600oC for 0.5-2h, and then removing excessive silicon at 1700oC for 0.5h. Scanning electron microscopy and X-ray diffraction were employed to characterize and analyze the microstructures and phase composition of the preforms and the final RB-SiC products. In addition, the effect of carbonization temperature, the amount of starch and solidified agent on strength and apparent porosity of final RB-SiC were also discussed. The results showed that the carbonization process of phenol resin can be divided into three steps: at temperatures from 400oC to 600oC, the structure of polymer changes less; at temperatures from 600oC to 1000oC, the fundamental chain of polymer is destroyed, and inverts to glass-like carbon; at temperatures from 1000oC to 1200oC, with the increasing of carbonization temperature, the structure of glass-like carbon changes into the structure of disorder graphite. And the increased micro-pores could be obtained by adding starch.

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Li, Han, Hong Zhao Xu, Chang Ling Zhou, and Yan Yan Wang. "Study on the Gel Casting Process of Silicon Carbide." Key Engineering Materials 697 (July 2016): 138–42. http://dx.doi.org/10.4028/www.scientific.net/kem.697.138.

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Silicon carbide possess high performances such as high hardness and strength, oxidation and high temperature resistance, high thermal conductivity and low thermal expansion coefficient. Widely used methods of molding green body for sintered pressureless bonded silicon carbide comprise dry pressing molding and casting molding. The former fails in preparation of complex shapes, while those prepared by casting molding are prone to have defects such as nonuniformity of density and easy cracking. Gel-casting is a net-shape modeling technology caused by the polymerization of organic monomer (acrylamide). The green bodies molded by gel-casting have uniform structure, high density, high strength and machinability. In this study, gel casting molding and pressureless sintering were used to prepare silicon carbide. The effect of the parameters of gel casting and sintering on the microstructure of the obtained silicon carbide was examined

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30

Saboktakin Rizi, Mohsen, Gholam Reza Razavi, Mojtaba Ostadmohamadi, and Ali Reza Havaie. "Optimization Electro Discharge Machining of Ti-6Al-4V Alloy with Silicon Carbide Powder Mixed." Advanced Materials Research 566 (September 2012): 466–69. http://dx.doi.org/10.4028/www.scientific.net/amr.566.466.

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The Ti-6Al-4V alloy is the most important and widely used titanium alloy which enjoys the welding, forging and machining capabilities. However brittle at high temperatures and low thermal conductivity caused restrictions to deformation and machining of this alloy. So advanced methods machining such as Electrical discharge machining has been developed for titanium and its alloys. One of the ways to improve the performance of electrical discharge machining method is to add the powder to the dielectric. Depending on the type of powder used the different results are achieved. In this study the effect of silicon carbide powder on electrical discharge machining of titanium alloys has been studied. Results suggest that the addition of silicon carbide powder in an electric discharge machining method reduces the roughness and rate filings will be taken. The experimental results showed that the addition of silicon carbide powder will have a positive effect on reducing corrosion of the electrode.

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Seya, Kyosuke, Shunkichi Ueno, and Byung-Koog Jang. "Formation ofAl2O3-HfO2Eutectic EBC Film on Silicon Carbide Substrate." Journal of Nanomaterials 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/318278.

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The formation mechanism ofAl2O3-HfO2eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized.Al2O3-HfO2eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components ofAl2O3andHfO2in molten phase also react with the free carbon. TheAl2O3phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomesHfO2rich from the eutectic composition.HfO2phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all ofHfO2phase is reduced to HfC phase, HfC-HfO2functionally graded layer is formed on the silicon carbide substrate and theAl2O3-HfO2eutectic structure grows from the top of the intermediate layer.

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32

Dhar, Sarit, Shurui Wang, John R. Williams, Sokrates T. Pantelides, and Leonard C. Feldman. "Interface Passivation for Silicon Dioxide Layers on Silicon Carbide." MRS Bulletin 30, no. 4 (April 2005): 288–92. http://dx.doi.org/10.1557/mrs2005.75.

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AbstractSilicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SiC interface critical to the development of SiC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility for inversion-mode 4H-SiC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market for devices that operate at 5 kV and below.

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Medina, Elisabetta, Enrico Sangregorio, Andreo Crnjac, Francesco Romano, Giuliana Milluzzo, Anna Vignati, Milko Jakšic, Lucia Calcagno, and Massimo Camarda. "Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations." Micromachines 14, no. 1 (January 9, 2023): 166. http://dx.doi.org/10.3390/mi14010166.

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Silicon carbide (SiC), thanks to its material properties similar to diamond and its industrial maturity close to silicon, represents an ideal candidate for several harsh-environment sensing applications, where sensors must withstand high particle irradiation and/or high operational temperatures. In this study, to explore the radiation tolerance of SiC sensors to multiple damaging processes, both at room and high temperature, we used the Ion Microprobe Chamber installed at the Ruđer Bošković Institute (Zagreb, Croatia), which made it possible to expose small areas within the same device to different ion beams, thus evaluating and comparing effects within a single device. The sensors tested, developed jointly by STLab and SenSiC, are PIN diodes with ultrathin free-standing membranes, realized by means of a recently developed doping-selective electrochemical etching. In this work, we report on the changes of the charge transport properties, specifically in terms of the charge collection efficiency (CCE), with respect to multiple localized proton irradiations, performed at both room temperature (RT) and 500 °C.

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Liu, Rongzhen, Gong Chen, Yudi Qiu, Peng Chen, Yusheng Shi, Chunze Yan, and Hongbin Tan. "Fabrication of Porous SiC by Direct Selective Laser Sintering Effect of Boron Carbide." Metals 11, no. 5 (April 29, 2021): 737. http://dx.doi.org/10.3390/met11050737.

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Additive manufactured porous SiC is a promising material applied in extreme conditions characterised by high temperatures, chemical corrosion, and irradiation etc. However, residual Si’s existence deteriorates its performance and limits its application in harsh environments. In this study, B4C was introduced into the selective laser sintering process of SiC, and its effects on forming ability, pore parameters, microstructure, and phases were investigated. The results showed that when B4C was added, the processing window was enlarged. The minimum energy density was reduced from 457 J/cm2 to 214 J/cm2 when the content of B4C reached 15 wt%. Microstructure orientation was enhanced, and the residual silicon content was decreased from 38 at.% to about 8 at.%. Small pores were turned into large pores with the increase of B4C addition. The findings indicate that the addition of B4C increases the amount of liquid phase during the laser sintering process of silicon carbide, improving the SiC struts’ density and reducing the residual silicon by reacting with it. Therefore, the addition of B4C will help improve the application performance of selected laser-sintered silicon carbide under extreme conditions.

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35

Nakao, Wataru. "Second Step Approach for Self Healing Ceramics." Materials Science Forum 638-642 (January 2010): 2133–37. http://dx.doi.org/10.4028/www.scientific.net/msf.638-642.2133.

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Self healing of surface cracks is the most effective function to ensure the structural integrity for ceramic components, because even minute surface crack give rise to a large strength decrease because of its high sensitivity to flaws. The present author and coworkers succeeded that the degraded strength due to cracking can be completely recovered by self crack healing ability driven by the high temperature oxidation of silicon carbide. Then, the mechanism and the effect of the self-healing were investigated. The most attractive feature of the self healing is to be able to respond to the damage caused during service. Thus, enhancement in self healing velocity has been necessary to actualize the self healing ceramics. In the present study, nanometer sizing the disperse silicon carbide particle was attempted to achieve the purpose. Alumina composites containing various shapes of silicon carbide nanometer sized particles were synthesized from mullite, aluminum and carbon powders. From the strength recovery behaviors of these alumina/ silicon carbide composites, the following aspects were derived. Silicon carbide particles nanometer sizing can heal completely the surface cracks at lower temperature and shorter time.

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Tan, Zhun Li, Bing Zhe Bai, Hong Sheng Fang, and Fu Bao Yang. "The Effect of Si on the Toughness of High Strength Mn-Si-Cr Series Bainitic Steels." Materials Science Forum 475-479 (January 2005): 213–16. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.213.

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The relationship between the toughness and silicon content of high strength Mn-Si-Cr series bainitic steels has been investigated. The results show that with increasing in silicon content, the onset temperature of the steel’s tempered martensite embrittlement (TME) rises; moreover, the minimum value of tested toughness decreases and the tempering temperature corresponding to the minimum value of toughness increases. This phenomenon results from the effect of silicon on the stability of filmy carbon-enriched retained austenite in carbide-free bainite/martensite (CFB/M) microstructure.

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37

Kim, Young Wook, Sung Hee Lee, Toshiyuki Nishimura, Mamoru Mitomo, Je Hun Lee, and Doh Yeon Kim. "Fabrication of Heat-Resistant Silicon Carbide Ceramics by Controlling Intergranular Phase." Key Engineering Materials 287 (June 2005): 299–310. http://dx.doi.org/10.4028/www.scientific.net/kem.287.299.

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The effect of glassy-phase, using AlN and Lu2O3 as sintering additives, on the microstructure and mechanical properties of liquid-phase-sintered, and subsequently annealed SiC ceramics was investigated. The microstructure was strongly influenced by the sintering additive composition, which determines the intergranular phase (IGP). The average thickness of SiC grains increased with increasing the Lu2O3 /(AlN + Lu2O3) ratio, whereas the average aspect ratio decreased with increasing the molar ratio. The homophase and heterophase boundaries of the SiC ceramics were completely crystalline in all specimens. The room temperature (RT) strength decreased with increasing the molar ratio whereas the RT toughness showed a minimum at the molar ratio of 0.6. The best results at RT were obtained when the molar ratio was 0.2. The flexural strength and fracture toughness of the ceramics were >700 MPa and ~6 MPa.m1/2 at RT. The high temperature strength was critically affected by the chemistry, especially the content of Al in the IGP. The best strength at temperatures ³ 1500oC was obtained when the molar ratio was 0.5. Flexural strengths of the ceramics at 1500oC and 1600oC were 610 ± 80 MPa and 540 ± 30 MPa, respectively. The beneficial effect of the new additive compositions (Lu2O3-AlN) on high-temperature strength of SiC ceramics was attributed to the crystallization or removal of IGP and introduction of Al into SiC, i.e., removal or reduction of Al content from the IGP, resulting in an improved refractoriness of the IGP.

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Murathan, Ömer Faruk, and Volkan Kilicli. "Effect of isothermal heat treatments under M_s temperature on the microstructures and mechanical properties of commercial high-silicon spring steel." Materials Testing 64, no. 8 (August 1, 2022): 1112–21. http://dx.doi.org/10.1515/mt-2022-0002.

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Abstract The effect of isothermal heat treatment temperatures under martensite start (Ms) temperature on the microstructure and mechanical properties of high-silicon commercial spring steel has been investigated. For this purpose, tensile specimens are prepared from AISI 9254 steel isothermally heat-treated under Ms temperatures (225 °C, 250 °C, and 275 °C) for 168 h after austenitizing at 870 °C for 30 min. Optical microscopy, scanning electron microscopy and X-ray diffraction analysis were used to characterize the microstructures of the specimens. Mechanical properties were determined by the tensile and hardness tests. Experimental results revealed that microstructure consists of carbide-free bainite, carbon enriched retained austenite, and martensite in high-silicon spring steel by the isothermal treatment under Ms temperature. The yield and tensile strength were increased by decreasing the isothermal temperature. However, uniform elongation and breaking energy were decreased by decreasing the isothermal temperature. The specimen which was isothermally heat-treated at 250 °C under Ms temperature showed a very good combination of tensile strength and total elongation as 2046 MPa and 8.5%, respectively. Dimples along with cap and cone formation which are evidence of a ductile fracture were observed in fractured surfaces of all isothermally heat-treated specimens.

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Suyama, Shoko, and Yoshiyasu Itoh. "Strengthening Mechanism of High-Strength Reaction-Sintered Silicon Carbide." Key Engineering Materials 484 (July 2011): 89–97. http://dx.doi.org/10.4028/www.scientific.net/kem.484.89.

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A newly developed high-strength reaction-sintered silicon carbide (SiC), which has two or three times higher strength than conventional sintered SiC, is one of the most promising candidates for lightweight substrates of optical mirrors, because of its fully dense structure, small sintering shrinkage ( < 0.5 %), good shape capability, and low sintering temperature. In this paper, in order to improve the performance of the newly developed reaction-sintered SiC, the effect of the microstructure on the bending strength was investigated by focusing on a physical fracture model using observations from transmission electron microscopy and X-ray stress measurement. As a result, it was confirmed that the bending strength of the newly developed reaction-sintered SiC could be improved by reducing the size of residual silicon. The strengthening mechanism of the newly developed reaction-sintered SiC was assumed to be due to piled-up dislocations at the grain-boundary of residual silicon sites, based on Stroh’s fracture model of polycrystalline solids.

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40

Buttay, Cyril, Remi Robutel, Christian Martin, Christophe Raynaud, Simeon Dampieni, Dominique Bergogne, and Thibaut Chailloux. "Effect of High Temperature Ageing on Active and Passive Power Devices." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000228–35. http://dx.doi.org/10.4071/hitec-rrobutel-wa24.

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The power devices needed to build a high-temperature converter (inductors, capacitors and active devices) have been stored at 200°C for up to 1000 hrs. Their characteristics have been monitored. Capacitors and magnetic materials from various manufacturers and technologies are tested, as well as silicon-carbide diodes. It is shown that by carefully choosing the components, it is possible to build a reliable power converter operating at high temperature.

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41

Din, Salah-ud, and M. Suleman. "Effect of high-temperature annealing on the microhardness of silicon carbide crystals." Materials Letters 5, no. 11-12 (October 1987): 484–88. http://dx.doi.org/10.1016/0167-577x(87)90070-x.

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42

Cheng, Xiaole, Dong Zhang, Xiaojun Wu, Guangshen Xu, and Hanguang Fu. "Effect of quenching temperature on microstructure and properties of low silicon hypereutectic high chromium cast iron." Metallurgical Research & Technology 120, no. 1 (December 9, 2022): 102. http://dx.doi.org/10.1051/metal/2022105.

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In this paper, the effects of different quenching temperatures on the microstructure and properties of Fe–4.0C–35.0Cr–0.5Si (wt.%) low-silicon hypereutectic high-chromium cast iron (LS-HHCCI) was investigated. The effect of quenching temperature on the microstructure of LS-HHCCI was analyzed by optical microscope, scanning electron microscope, and X-ray diffractometer. After quenching at different temperatures, the hardness and wear resistance of LS-HHCCI were tested by Rockwell hardness tester, microhardness tester, and wear testing machine. The results show that the microstructure of as-cast LS-HHCCI is mainly composed of austenite matrix and M7C3 carbides. After quenching, the austenite matrix is transformed into martensite, and M23C6 type secondary carbides are precipitated in the matrix. As the quenching temperature increased from 950 °C to 1100 °C, the eutectic carbides first appeared as fine needles, and then they gather and grow up, showing elongated or lumpy. The hardness and abrasion resistance first increase and then decrease, it reached peak values of 67.2 HRC at the temperature of 1050 °C, while the wear resistance is the best.

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Yang, Jie, Rui Xiang Liu, Xue Ye Sui, Chang Ling Zhou, Chong Hai Wang, and Wen Yuan Zhang. "Effect of Binders on Preparation of High Temperature Rigid Thermal Insulation Materials." Key Engineering Materials 697 (July 2016): 453–56. http://dx.doi.org/10.4028/www.scientific.net/kem.697.453.

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With the development of ultra high temperature rigid heat insulation materials in the space field, it is an important strategic significance to prepare and research insulation materials of 1500°C high temperature. In our paper, the material was achieved through the process of wet suction filter forming and high temperature heat treatment, during which the high temperature alumina fiber was used as main ingredient. The fiber binder directly influences the mechanical and thermal properties of the material, and our samples were prepared using boron carbide and silicon carbide (both), borosilicate glass, alumina sol and aluminum dihydrogen phosphate as binder, respectively. The results show that borosilicate glass was the best one. Coefficient of thermal conductivity at 1000°C, lift strength and plane direction compression strength (10% compression) of the high temperature material were 0.12 W/mK, 0.35 MPa, and 1.1 MPa, respectively.

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44

Strojny-Nędza, A., K. Pietrzak, M. Teodorczyk, M. Basista, W. Węglewski, and M. Chmielewski. "Influence of Material Coating on the Heat Transfer in a Layered Cu-SiC-Cu Systems." Archives of Metallurgy and Materials 62, no. 2 (June 1, 2017): 1311–14. http://dx.doi.org/10.1515/amm-2017-0199.

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AbstractThis paper describes the process of obtaining Cu-SiC-Cu systems by way of spark plasma sintering. A monocrystalline form of silicon carbide (6H-SiC type) was applied in the experiment. Additionally, silicon carbide samples were covered with a layer of tungsten and molybdenum using chemical vapour deposition (CVD) technique. Microstructural examinations and thermal properties measurements were performed. A special attention was put to the metal-ceramic interface. During annealing at a high temperature, copper reacts with silicon carbide. To prevent the decomposition of silicon carbide two types of coating (tungsten and molybdenum) were applied. The effect of covering SiC with the aforementioned elements on the composite’s thermal conductivity was analyzed. Results were compared with the numerical modelling of heat transfer in Cu-SiC-Cu systems. Certain possible reasons behind differences in measurements and modelling results were discussed.

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45

Flicker, Jack, David Hughart, Robert Kaplar, Stanley Atcitty, and Matthew Marinella. "Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs and JFETs at High Temperatures." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (January 1, 2014): 000228–34. http://dx.doi.org/10.4071/hitec-wp16.

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1200 V Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) and Junction Field Effect Transistors (JFETs) have been characterized at high operational temperatures. For packaged JFETs obtained from a collaborating manufacturer, the threshold shift (ΔVT) was measured under both static and dynamic voltage stress and, in all cases, was less than 2 mV, which is within the measurement margin of error. Temperatures up to 250°C and stress times as long as 200 hours were evaluated. As a comparison, commercially available SiC MOSFETs demonstrated shifts of up to 300 mV after 30 minutes of static gate stress at 175°C. In addition, results from unpackaged JFET die at temperatures up to 525°C show ΔVT values of less than 10 mV for all stress conditions. Although VT remained unchanged for the duration of the test for both static and dynamic stress conditions, under dynamic stress conditions the JFET packaged parts demonstrated a linear increase in sub-threshold leakage current of around 15.6 nA per hour; in contrast, the MOSFET devices showed an exponential increase in sub-threshold leakage under dynamic stress. The increase in sub-threshold leakage current could be recovered temporarily, but long-term behavior was consistent with cumulative damage.

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Greenwell, R. L., B. M. McCue, M. I. Laurence, C. L. Fandrich, B. J. Blalock, L. M. Tolbert, and S. K. Islam. "SOI-Based Integrated Gate Driver Circuit for High-Temperature Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, HITEC (January 1, 2012): 000233–44. http://dx.doi.org/10.4071/hitec-2012-wp16.

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The growing demand for hybrid electric vehicles (HEVs) has increased the need for high-temperature electronics that can operate at the temperatures that exist under the hood of these vehicles. In many cases this requires the use of thermal management systems to allow for the use of components not designed to operate at the ambient temperatures found in the engine compartment of an HEV. These systems add weight and complexity, which can increase the overall cost and reduce the efficiency of the vehicle. The alternative is to develop circuits and systems capable of operating with reduced or no thermal management. To this end, the latest version of our high-temperature gate driver integrated circuit (IC) has been developed. Designed and implemented on a 0.8-micron bipolar-CMOS-DMOS (BCD) on silicon-on-insulator (SOI) process, this gate driver chip is intended to drive silicon carbide (SiC) and other wide-bandgap (WBG) power field-effect transistors (FETs) for DC-DC converters and traction drives in HEVs. To enable this, the gate driver IC, which includes on-chip voltage regulators and protection circuitry, has been designed to operate at and successfully tested up to 200°C ambient temperature. Successful operation of the circuit at this temperature with minimal or no heat sink, and without liquid cooling, will help to achieve higher power-to-volume as well as power-to-weight ratios for the power electronics modules in HEVs.

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Franceschi, Mattia, Luca Pezzato, Alessio Giorgio Settimi, Claudio Gennari, Mirko Pigato, Marina Polyakova, Dmitry Konstantinov, Katya Brunelli, and Manuele Dabalà. "Effect of Different Austempering Heat Treatments on Corrosion Properties of High Silicon Steel." Materials 14, no. 2 (January 8, 2021): 288. http://dx.doi.org/10.3390/ma14020288.

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A novel high silicon austempered (AHS) steel has been studied in this work. The effect of different austenitizing temperatures, in full austenitic and biphasic regime, on the final microstructure was investigated. Specimens were austenitized at 780 °C, 830 °C, 850 °C and 900 °C for 30 min and held isothermally at 350 °C for 30 min. A second heat treatment route was performed which consisted of austenitizing at 900 °C for 30 min and austempering at 300 °C, 350 °C and 400 °C for 30 min. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) have been used to evaluate the microstructural evolution. These techniques revealed that the microstructures were composed of carbide-free bainite, ferrite, martensite and retained austenite (RA) in different volume fractions (Vγ). An aqueous borate buffer solution with 0.3 M H3BO3 and 0.075 M Na2B4O7∂10H2O (pH = 8.4) was used for corrosion tests in order to evaluate the influence of the different volume fractions of retained austenite on the corrosion properties of the specimens. The results showed that when increasing the austenitization temperatures, the volume fractions of retained austenite reached a maximum value at 850 °C, and decrease at higher temperatures. The corrosion properties were investigated after 30 min and 24 h immersion by means of potentiodynamic polarization (after 30 min) and electrochemical impedance spectroscopy (after both 30 min and 24 h) tests. The corrosion resistance of the samples increased with increases in the volume fraction of retained austenite due to lower amounts of residual stresses.

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Franceschi, Mattia, Luca Pezzato, Alessio Giorgio Settimi, Claudio Gennari, Mirko Pigato, Marina Polyakova, Dmitry Konstantinov, Katya Brunelli, and Manuele Dabalà. "Effect of Different Austempering Heat Treatments on Corrosion Properties of High Silicon Steel." Materials 14, no. 2 (January 8, 2021): 288. http://dx.doi.org/10.3390/ma14020288.

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A novel high silicon austempered (AHS) steel has been studied in this work. The effect of different austenitizing temperatures, in full austenitic and biphasic regime, on the final microstructure was investigated. Specimens were austenitized at 780 °C, 830 °C, 850 °C and 900 °C for 30 min and held isothermally at 350 °C for 30 min. A second heat treatment route was performed which consisted of austenitizing at 900 °C for 30 min and austempering at 300 °C, 350 °C and 400 °C for 30 min. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) have been used to evaluate the microstructural evolution. These techniques revealed that the microstructures were composed of carbide-free bainite, ferrite, martensite and retained austenite (RA) in different volume fractions (Vγ). An aqueous borate buffer solution with 0.3 M H3BO3 and 0.075 M Na2B4O7∂10H2O (pH = 8.4) was used for corrosion tests in order to evaluate the influence of the different volume fractions of retained austenite on the corrosion properties of the specimens. The results showed that when increasing the austenitization temperatures, the volume fractions of retained austenite reached a maximum value at 850 °C, and decrease at higher temperatures. The corrosion properties were investigated after 30 min and 24 h immersion by means of potentiodynamic polarization (after 30 min) and electrochemical impedance spectroscopy (after both 30 min and 24 h) tests. The corrosion resistance of the samples increased with increases in the volume fraction of retained austenite due to lower amounts of residual stresses.

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Farina, Alexandre Bellegard, Rafael Agneli Mesquita, Hélio Goldenstein, and Hans Jürgen Kestenbach. "Thermodynamic Modelling of Carbide Precipitation in Hot Work Tool Steels with Different Silicon Contents." Solid State Phenomena 172-174 (June 2011): 1171–76. http://dx.doi.org/10.4028/www.scientific.net/ssp.172-174.1171.

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New grades have been developed in high alloy tool steels, enabling improved mechanical properties by modifications on Si, Cr or Mo contents. The correlation between alloy modifications and mechanical properties were successively correlated to microstructural aspects in previous work, especially in terms of secondary hardening carbides. In the present paper, thermodynamic and kinetic simulations were carried out and correlated to these data, especially in terms of Si effect on M3C carbide precipitation. Free energy evaluation points to easier formation of M7C3carbide in high Si steels, especially at high tempering temperatures, which are typical for hot work tool steels. Kinetic evaluations, based on the present simulations and literature, also show that cementite formation is retarded in high Si steels, which also lead to direct formation of M7C3. Regarding the low Si steels, cementite enrichment by Cr, Mo and V was also evaluated in terms of simulation. The results are in good agreement and help the explanation on the slower dissolution of cementite particles in low silicon steels, leading to important implications to the higher tempering resistance of these grades. Therefore, tempering simulation on the new hot work tool steel compositions aided the understanding of the microstructure modifications found experimentally.

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Zhang, Xiao Feng, and Lutgard C. De Jonghe. "Thermal Modification of Microstructures and Grain Boundaries in Silicon Carbide." Journal of Materials Research 18, no. 12 (December 2003): 2807–13. http://dx.doi.org/10.1557/jmr.2003.0391.

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Polycrystalline SiC samples hot pressed with aluminum, boron, and carbon sintering additions (ABC-SiC) were characterized using transmission electron microscopy. The study focused on the effects of high-temperature treatment on microstructure. Three temperatures, at which considerable microstructural changes took place, were found to be critical. At a threshold temperature of approximately 1000°C, 1-nm-wide, amorphous intergranular films started to crystallize. At approximately 1300°C, lattice diffusion in SiC grains resulted in nanoprecipits, which could diffuse into grain boundaries and significantly altered composition. Quantitative microanalysis revealed doubled Al content in intergranular films after annealing at 1300°C. Except for crystallization in intergranular films and nano-precipitation in matrix grains, microstructure remained stable until 1600°C, when microstructural changes with volatile features occurred. A brief holding at 1900°C brought marked changes in microstructure, including structural change in intergranular films, dissolved nanoprecipitates, unit cell dilation, and cracking. The results indicate that ABC-SiC is highly promising in structural applications at up to 1500°C.

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