Relevant bibliographies by topics / Silicon carbide Effect of high temperatures on

Academic literature on the topic 'Silicon carbide Effect of high temperatures on'

Author: Grafiati
Published: 10 December 2022
Last updated: 30 January 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Contents

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Silicon carbide Effect of high temperatures on.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Silicon carbide Effect of high temperatures on"

1

Sun, Wenyue, Zhiliang Huang, Changlian Chen, and Song Chen. "Preparation of Silicon Carbide Film by Composite Sintering of Silicon Nitride and Silicon Carbide." Journal of Physics: Conference Series 2390, no. 1 (December 1, 2022): 012001. http://dx.doi.org/10.1088/1742-6596/2390/1/012001.

Full text
Abstract:
Abstract Graphite can be protected by coating it with a silicon carbide film. However, studies on the effects of different coating methods and process parameters on the thickness and bond strength of the films are not yet mature. In this paper, silicon nitride (Si3N4) and silicon carbide (SiC) are used as raw materials, and SiC films are successfully prepared on the surface of graphite substrate by composite sintering at high temperatures. The phase and microstructure of SiC films were characterized by X-ray diffractometer (XRD) and scanning electron microscope (SEM), respectively, and the effect and mechanism of sintering temperature on the formation of SiC films were investigated. The results show that Si3N4 and SiC decompose under high temperatures to generate silicon vapor and carbon-silicon gas molecules, which migrate to the graphite surface to react with C and recrystallize to form a SiC film. The main crystal phase of the SiC film at high temperature is 3C-SiC, the spherical SiC grains with smooth surfaces and small size gradually grow into regular hexagonal grains, and the SiC film is denser and thicker.
APA, Harvard, Vancouver, ISO, and other styles
2

Zvonarev, E. V., A. Ph Ilyushchanka, Zh A. Vitko, V. A. Osipov, and D. V. Babura. "Effect of reaction sintering modes on the structure and properties of carbide ceramics." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 63, no. 4 (January 12, 2019): 407–15. http://dx.doi.org/10.29235/1561-8358-2018-63-4-407-415.

Full text
Abstract:
Experimental studies of the structure, phase composition, physical and mechanical properties of the reaction-sintered ceramics based on silicon carbide and boron obtained by reaction sintering have been performed. It has been shown that the properties of the reaction-sintered ceramics based on carbides are largely determined by the quality of impregnation of the porous carbide frame with silicon, which depends on the total and open porosity, shape and size of the pores of the compact, the composition of the charge from the carbide powder. High-temperature sintering, followed by impregnation of the carbide frame with silicon and its interaction with the carbon constituent of the frame, largely determines the properties of the material. The main task in the implementation of this process is to create conditions that ensure the full filling of pores in the initial compact during impregnation with silicon melt and, secondly, maximum activation of chemical interaction between the melt of silicon, carbon and other components that compose the charge. A complex of studies on the effect of compacting pressure and annealing temperature of the charge based on silicon carbide and boron powders with the addition of graphite on the pore structure of the compact and the quality of its impregnation with a silicon melt has been carried out in this work. It has been shown that the density, bending strength, hardness of ceramics based on silicon carbide and boron carbide obtained by reaction sintering are increased with a rise in compacting pressure of carbide frames. The optimum porosity of the carbide frame is 25–30 %; the pore size is 1.0–1.5 μm. It has been also demonstrated that ceramics based on boron carbide and boron carbide with 50 % silicon carbide impregnated with silicon at high-temperature sintering has higher strength and hardness values than those based on silicon carbide due to higher adhesion strength at the interface of boron carbide particles and binder, caused by the dissolution of boron carbide in the silicon melt and the formation of complex carbide particles on the surface.
APA, Harvard, Vancouver, ISO, and other styles
3

Dang, Dinh Lam, Matthieu Urbain, and Stephane Rael. "Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling." Materials Science Forum 963 (July 2019): 592–95. http://dx.doi.org/10.4028/www.scientific.net/msf.963.592.

Full text
Abstract:
Silicon carbide (SiC) MOSFET features low on-resistance per area even at high temperatures compared to a silicon (Si) counterpart with the same voltage rating. However, SiC MOSFET exhibits a unique behavior over operating temperatures due to the presence of interface trap charges. The effect of temperature on the on-resistance of SiC MOSFET has been studied through experimental measurements at difference temperatures from - 30 °C to 150 °C. The results show that high contribution of channel resistance is the critical factor to determine the behavior of SiC MOSFET with temperature.
APA, Harvard, Vancouver, ISO, and other styles
4

Mousa, Habeeb, and Kasif Teker. "High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications." Microelectronics International 38, no. 2 (August 4, 2021): 78–83. http://dx.doi.org/10.1108/mi-05-2021-0043.

Full text
Abstract:
Purpose The purpose of this study is to present a systematic investigation of the effect of high temperatures on transport characteristics of nitrogen-doped silicon carbide nanowire-based field-effect transistor (SiC-NWFET). The 3C-SiC nanowires can endure high-temperature environments due to their wide bandgap, high thermal conductivity and outstanding physical and chemical properties. Design/methodology/approach The metal-organic chemical vapor deposition process was used to synthesize in-situ nitrogen-doped SiC nanowires on SiO2/Si substrate. To fabricate the proposed SiC-NWFET device, the dielectrophoresis method was used to integrate the grown nanowires on the surface of pre-patterned electrodes onto the SiO2 layer on a highly doped Si substrate. The transport properties of the fabricated device were evaluated at various temperatures ranging from 25°C to 350°C. Findings The SiC-NWFET device demonstrated an increase in conductance (from 0.43 mS to 1.2 mS) after applying a temperature of 150°C, and then a decrease in conductance (from 1.2 mS to 0.3 mS) with increasing the temperature to 350°C. The increase in conductance can be attributed to the thermionic emission and tunneling mechanisms, while the decrease can be attributed to the phonon scattering. Additionally, the device revealed high electron and hole mobilities, as well as very low resistivity values at both room temperature and high temperatures. Originality/value High-temperature transport properties (above 300°C) of 3C-SiC nanowires have not been reported yet. The SiC-NWFET demonstrates a high transconductance, high electron and hole mobilities, very low resistivity, as well as good stability at high temperatures. Therefore, this study could offer solutions not only for high-power but also for low-power circuit and sensing applications in high-temperature environments (∼350°C).
APA, Harvard, Vancouver, ISO, and other styles
5

Chailloux, Thibaut, Cyril Calvez, Dominique Tournier, and Dominique Planson. "Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature." Materials Science Forum 821-823 (June 2015): 814–17. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.814.

Full text
Abstract:
The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.
APA, Harvard, Vancouver, ISO, and other styles
6

Weng, M. H., A. D. Murphy, D. T. Clark, D. A. Smith, R. F. Thompson, R. A. R. Young, E. P. Ramsay, H. K. Chan, and A. B. Horsfall. "Gate Stack Engineering for High Temperature Silicon Carbide CMOS ICs." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000033–36. http://dx.doi.org/10.4071/hiten-session1-paper1_6.

Full text
Abstract:
The potential to thermally grow SiO2 on silicon carbide has resulted in it becoming the technology of choice to realise high temperature CMOS circuits. The challenge to achieve a high quality gate stack relies on engineering the metal-insulator-semiconductor interfaces to enable reliable high temperature functionality. Here we describe the effect of different process conditions for the formation of the dielectric layer on the characteristics of the resulting devices. The operating characteristics at elevated temperatures depend critically on the quality of the gate stack. Therefore a systematic evaluation of the intrinsic properties of the gate stack and data from reliability tests are needed.
APA, Harvard, Vancouver, ISO, and other styles
7

Suyama, Shoko, and Yoshiyasu Itoh. "High-Strength Reaction-Sintered Silicon Carbide for Large-Scale Mirrors - Effect of Surface Oxide Layer on Bending Strength." Advances in Science and Technology 63 (October 2010): 374–82. http://dx.doi.org/10.4028/www.scientific.net/ast.63.374.

Full text
Abstract:
Reaction-sintered silicon carbide of 800 MPa class bending strength had been newly developed. The developed silicon carbide showed good rigidity, high thermal conductivity, and high density, like a conventional sintered silicon carbide. The developed silicon carbide is one of the most attractive materials for large-scale ceramic structures because of its low processing temperature, good shape capability, low-cost processing and high purity. We had fabricated some lightweight space mirrors, such as a high-strength reaction-sintered silicon carbide mirror of 650 mm in diameter. In this study, experiments were conducted to investigate the effect of annealing on the bending strength of high-strength reaction-sintered silicon carbide. The annealing heat treatments were carried out at 1073 K, 1273 K, and 1473 K in an air atmosphere. The maximum bending strength of 1091 MPa at room temperature was achieved by the annealing heat-treatment at 1273 K for 10 h in air. We confirmed that annealing heat treatment was effective to improve the bending strength of reaction-sintered silicon carbide by inducing compressive residual stress at the surface oxide layer.
APA, Harvard, Vancouver, ISO, and other styles
8

Lee, Te-Hao, Swarup Bhunia, and Mehran Mehregany. "Electromechanical Computing at 500°C with Silicon Carbide." Science 329, no. 5997 (September 9, 2010): 1316–18. http://dx.doi.org/10.1126/science.1192511.

Full text
Abstract:
Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300°C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, microwave operating frequencies, radiation hardness, and nanoscale dimensions. Here, we report a microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500°C with ultralow leakage current.
APA, Harvard, Vancouver, ISO, and other styles
9

Zhao, Jian H. "Silicon Carbide Power Field-Effect Transistors." MRS Bulletin 30, no. 4 (April 2005): 293–98. http://dx.doi.org/10.1557/mrs2005.76.

Full text
Abstract:
AbstractSilicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.
APA, Harvard, Vancouver, ISO, and other styles
10

Ouaida, Rémy, Cyril Buttay, Anhdung Hoang, Raphaël Riva, Dominique Bergogne, Hervé Morel, Christophe Raynaud, and Florent Morel. "Thermal Runaway Robustness of SiC VJFETs." Materials Science Forum 740-742 (January 2013): 929–33. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.929.

Full text
Abstract:
Silicon Carbide (SiC) Junction-Field Effect Transistors (JFETs) are attractive devices for power electronics. Their high temperature capability should allow them to operate with a reduced cooling system. However, experiments described in this paper conclude to the existence of runaway conditions in which these transistors will reach destructive temperatures.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Silicon carbide Effect of high temperatures on"

1

Wingbrant, Helena. "Development of high temperature SiC based field effect sensors for internal combustion engine exhaust gas monitoring." Licentiate thesis, Linköping University, Linköping University, Applied Physics, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-4673.

Full text
Abstract:

While the car fleet becomes increasingly larger it is important to lower the amounts of pollutants from each individual diesel or gasoline engine to almost zero levels. The pollutants from these engines predominantly originate from high NOx emissions and particulates, in the case when diesel is utilized, and emissions at cold start from gasoline engines. One way of treating the high NOx levels is to introduce ammonia in the diesel exhausts and let it react with the NOx to form nitrogen gas and water, which is called SCR (Selective Catalytic Reduction). However, in order to make this system reduce NOx efficiently enough for meeting future legislations, closed loop control is required. To realize this type of system an NOx or ammonia sensor is needed. The cold start emissions from gasoline vehicles are primarily due to a high light-off time for the catalytic converter. Another reason is the inability to quickly heat the sensor used for controlling the air-to-fuel ratio in the exhausts, also called the lambda value, which is required to be in a particular range for the catalytic converter to work properly. This problem may be solved utilizing another, more robust sensor for this purpose.

This thesis presents the efforts made to test the SiC-based field effect transistor (SiC-FET) sensor technology both as an ammonia sensor for SCR systems and as a cold start lambda sensor. The SiC-FET sensor has been shown to be highly sensitive to ammonia both in laboratory and engine measurements. As a lambda sensor it has proven to be both sensitive and selective, and its properties have been studied in lambda stairs both in engine exhausts and in the laboratory. The influence of metal gate restructuring on the linearity of the sensor has also been investigated. The speed of response for both sensor types has been found to be fast enough for closed loop control in each application.


On the day of the public defence of the doctoral thesis, the status of article III was: in press. Report code: LiU-Tek-Lic-2003:50.
APA, Harvard, Vancouver, ISO, and other styles
2

McNaughton, Adam L. "High Temperature Compression Testing of Monolithic Silicon Carbide (SiC)." Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/McNaughtonAL2007.pdf.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Mihăilă, Andrei-Petru. "Silicon carbide high power field effect transistor switches." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614951.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Buttram, Jonathan D. "Characterization of high temperature creep in siliconized silicon carbide using ultrasonic techniques." Thesis, This resource online, 1990. http://scholar.lib.vt.edu/theses/available/etd-03122009-040453/.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Falahi, Khalil El. "Contribution à la conception de driver en technologie CMOS SOI pour la commande de transistors JFET SiC pour un environnement de haute température." Thesis, Lyon, INSA, 2012. http://www.theses.fr/2012ISAL0056/document.

Full text
Abstract:
Dans le domaine aéronautique, les systèmes électriques remplacement progressivement les systèmes de contrôle mécaniques ou hydrauliques. Les bénéfices immédiats sont la réduction de la masse embarquée et des performances accrues à condition que l’électronique supporte l’absence de système de refroidissement. Si la haute température de fonctionnement n’empêche pas d’atteindre une fiabilité suffisante, il y aura réduction des coûts opérationnels. Des étapes clefs ont été franchies en introduisant des systèmes à commande électriques dans les aéronefs en lieu et place de systèmes conventionnels : freins électriques, inverseur de poussée, vérins électriques de commandes de vol… Toutes ces avancées se sont accélérées ces dernières années grâce entre autre à l’utilisation de nouveaux matériaux semiconducteurs, dit à grand gap (SiC, GaN…), opérant à haute température et palliant ainsi une faiblesse des dispositifs classiques en silicium (Si). Des composants de puissance haute température, diode Schottky ou transistor JFET SiC, sont ainsi disponibles commercialement et peuvent supporter des ambiantes de plus de 220°C. Des modules de puissances (onduleur) à base de transistor JFET SiC ont été réalisés et validés à haute température. Finalement la partie « commande » de ces modules de puissance reste à concevoir pour les environnements sévères pour permettre leur introduction dans le module de puissance. C’est dans ce contexte de faiblesse concernant l’étage de commande rapprochée qu’a été construit le projet FNRAE COTECH, et où s’inscrivent les travaux de cette thèse, Dans un premier temps, un état de l’art sur les drivers et leurs technologies nous a permis de souligner le lien complexe entre électronique et température ainsi que le potentiel de la technologie CMOS sur Silicium sur Isolant (SOI) pour des applications hautes températures. La caractérisation en température de drivers SOI disponibles dans le commerce nous a fourni des données d’entrée sur le comportement de tels dispositifs. Ces caractérisations sont essentielles pour visualiser et interpréter l’effet de la température sur les caractéristiques du dispositif. Ces mesures mettent aussi en avant les limites pratiques des technologies employées. La partie principale de cette thèse concerne la conception et la caractérisation de blocs ou IPs pour le cœur d’un driver haute température de JFET SiC. Elle est articulée autour de deux runs SOI (TFSmart1). Les blocs développés incluent entre autres des étages de sortie et leurs buffers associés et des fonctions de protection. Les drivers ainsi constitués ont été testés sur un intervalle de température allant de -50°C à plus de 250°C sans défaillance constatée. Une fonction originale de protection des JFETs contre les courts-circuits a été démontrée. Cette fonction permet de surmonter la principale limitation de ces transistors normalement passant (Normaly-ON). Finalement, un module de bras d’onduleur a été conçu pour tester ces driver in-situ
In aeronautics, electrical systems progressively replace mechanical and hydraulic control systems. If the electronics can stand the absence of cooling, the immediate advantages will be the reduction of mass, increased performances, admissible reliability and thus reduction of costs. In aircraft, some important steps have already been performed successfully when substituting standard systems by electrical control system such as electrical brakes, thrust reverser, electrical actuators for flight control… Large band gap semiconductors (SiC, GaN…) have eased the operation in high temperature over the last decade and let overcome a weakness of conventional silicon systems (Si). High temperature power components such as Schottky diodes or JFET transistors, are already commercially available for a use up to 220°C, limited by package. Moreover inverters based on SiC JFET transistors have been realized and characterized at high temperature. Finally the control part of these power systems needs to be designed for harsh environment. It is in this context of lack of integrated control part that the FNRAE COTECH project and my doctoral research have been built. Based on a state of the art about drivers, the complex link between electronic and temperature and the potentialities of CMOS Silicon-On-Insulator technology (SOI) for high temperature applications have been underlined. The characterization of commercial SOI drivers gives essential data on these systems and their behavior at high temperature. These measurements also highlight the practical limitations of SOI technologies. The main part of this manuscript concerns the design and characterization of functions or IPs for high temperature JFET SiC driver. Two SOI runs in TFSmart1 have been realized. The developed functions include the driver output stage, associated buffers and protection functions. The drivers have been tested from -50°C up to 250°C without failure under short time-range. Moreover, an original protection function has been demonstrated against the short-circuit of an inverter leg. This function allows overcoming the main limitation of the normally on JFET transistor. Finally, an inverter module has been built for in-situ test of these new drivers
APA, Harvard, Vancouver, ISO, and other styles
6

Mogniotte, Jean-François. "Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0004/document.

Full text
Abstract:
L’émergence d’interrupteurs de puissance en SiC permet d’envisager des convertisseurs de puissance capables de fonctionner au sein des environnements sévères tels que la haute tension (> 10 kV ) et la haute température (> 300 °C). Aucune solution de commande spécifique à ces environnements n’existe pour le moment. Le développement de fonctions élémentaires en SiC (comparateur, oscillateur) est une étape préliminaire à la réalisation d’un premier démonstrateur. Plusieurs laboratoires ont développé des fonctions basées sur des transistors bipolaires, MOSFETs ou JFETs. Cependant les recherches ont principalement portées sur la conception de fonctions logiques et non sur l’intégration de drivers de puissance. Le laboratoire AMPERE (INSA de Lyon) et le Centre National de Microélectronique de Barcelone (Espagne) ont conçu un MESFET latéral double grille en SiC. Ce composant élémentaire sera à la base des différentes fonctions intégrées envisagées. L’objectif de ces recherches est la réalisation d’un convertisseur élévateur de tension "boost" monolithique et de sa commande en SiC. La démarche scientifique a consisté à définir dans un premier temps un modèle de simulation SPICE du MESFET SiC à partir de caractérisations électriques statique et dynamique. En se basant sur ce modèle, des circuits analogiques tels que des amplificateurs, oscillateurs, paires différentielles, trigger de Schmitt ont été conçus pour élaborer le circuit de commande (driver). La conception de ces fonctions s’avère complexe puisqu’il n’existe pas de MESFETs de type P et une polarisation négative de -15 V est nécessaire au blocage des MESFETs SiC. Une structure constituée d’un pont redresseur, d’un boost régulé avec sa commande basée sur ces différentes fonctions a été réalisée et simulée sous SPICE. L’ensemble de cette structure a été fabriqué au CNM de Barcelone sur un même substrat SiC semi-isolant. L’intégration des éléments passifs n’a pas été envisagée de façon monolithique (mais pourrait être considérée pour les inductances et capacités dans la mesure où les valeurs des composants intégrés sont compatibles avec les processus de réalisation). Le convertisseur a été dimensionné pour délivrer une de puissance de 2.2 W pour une surface de 0.27 cm2, soit 8.14 W/cm2. Les caractérisations électriques des différents composants latéraux (résistances, diodes, transistors) valident la conception, le dimensionnement et le procédé de fabrication de ces structures élémentaires, mais aussi de la majorité des fonctions analogiques. Les résultats obtenus permettent d’envisager la réalisation d’un driver monolithique de composants Grand Gap. La perspective des travaux porte désormais sur la réalisation complète du démonstrateur et sur l’étude de son comportement en environnement sévère notamment en haute température (> 300 °C). Des analyses des mécanismes de dégradation et de fiabilité des convertisseurs intégrés devront alors être envisagées
The new SiC power switches is able to consider power converters, which could operate in harsh environments as in High Voltage (> 10kV) and High Temperature (> 300 °C). Currently, they are no specific solutions for controlling these devices in harsh environments. The development of elementary functions in SiC is a preliminary step toward the realization of a first demonstrator for these fields of applications. AMPERE laboratory (France) and the National Center of Microelectronic of Barcelona (Spain) have elaborated an elementary electrical compound, which is a lateral dual gate MESFET in Silicon Carbide (SiC). The purpose of this research is to conceive a monolithic power converter and its driver in SiC. The scientific approach has consisted of defining in a first time a SPICE model of the elementary MESFET from electric characterizations (fitting). Analog functions as : comparator, ring oscillator, Schmitt’s trigger . . . have been designed thanks to this SPICE’s model. A device based on a bridge rectifier, a regulated "boost" and its driver has been established and simulated with the SPICE Simulator. The converter has been sized for supplying 2.2 W for an area of 0.27 cm2. This device has been fabricated at CNM of Barcelona on semi-insulating SiC substrate. The electrical characterizations of the lateral compounds (resistors, diodes, MESFETs) checked the design, the "sizing" and the manufacturing process of these elementary devices and analog functions. The experimental results is able to considerer a monolithic driver in Wide Band Gap. The prospects of this research is now to realize a fully integrated power converter in SiC and study its behavior in harsh environments (especially in high temperature > 300 °C). Analysis of degradation mechanisms and reliability of the power converters would be so considerer in the future
APA, Harvard, Vancouver, ISO, and other styles
7

Hu, Yike. "Production and properties of epitaxial graphene on the carbon terminated face of hexagonal silicon carbide." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/48705.

Full text
Abstract:
Graphene is widely considered to be a promising candidate for a new generation of electronics, but there are many outstanding fundamental issues that need to be addressed before this promise can be realized. This thesis focuses on the production and properties of graphene grown epitaxially on the carbon terminated face (C-face) of hexagonal silicon carbide leading to the construction of a novel graphene transistor structure. C-face epitaxial graphene multilayers are unique due to their rotational stacking that causes the individual layers to be electronically decoupled from each other. Well-formed C-face epitaxial graphene single layers have exceptionally high mobilities (exceeding 10,000 cm ²/Vs), which are significantly greater than those of Si-face graphene monolayers. This thesis investigates the growth and properties of C-face single layer graphene. A field effect transistor based on single layer graphene was fabricated and characterized for the first time. Aluminum oxide or boron nitride was used for the gate dielectric. Additionally, an all graphene/SiC Schottky barrier transistor on the C-face of SiC composed of 2DEG in SiC/Si₂O ₃ interface and multilayer graphene contacts was demonstrated. A multiple growth scheme was adopted to achieve this unique structure.
APA, Harvard, Vancouver, ISO, and other styles
8

Jeon, Seung Woo. "Ultra-high-Q SiC photonic nanocavities." 京都大学 (Kyoto University), 2016. http://hdl.handle.net/2433/215549.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Hamieh, Youness. "Caractérisation et modélisation du transistor JFET en SiC à haute température." Phd thesis, INSA de Lyon, 2011. http://tel.archives-ouvertes.fr/tel-00665817.

Full text
Abstract:
Dans le domaine de l'électronique de puissance, les dispositifs en carbure de silicium (SiC) sont bien adaptés pour fonctionner dans des environnements à haute température, haute puissance, haute tension et haute radiation. Le carbure de silicium (SiC) est un matériau semi-conducteur à large bande d'énergie interdite. Ce matériau possède des caractéristiques en température et une tenue aux champs électriques bien supérieure à celles de silicium. Ces caractéristiques permettent des améliorations significatives dans une grande variété d'applications et de systèmes. Parmi les interrupteurs existants, le JFET en SiC est l'interrupteur le plus avancé dans son développement technologique, et il est au stade de la pré-commercialisation. Le travail réalisé au cours de cette thèse consiste à caractériser électriquement des JFET- SiC de SiCED en fonction de la température (25°C-300°C). Des mesures ont été réalisé en statique (courant-tension), en dynamique (capacité-tension) et en commutation sur charge R-L (résistive-inductives) et dans un bras d'onduleur. Un modèle multi-physique du transistor VJFET de SiCED à un canal latéral a été présenté. Le modèle a été développé en langage MAST et validé aussi bien en mode de fonctionnement statique que dynamique en utilisant le simulateur SABER. Ce modèle inclut une représentation asymétrique du canal latéral et les capacités de jonction de la structure. La validation du modèle montre une bonne concordance entre les mesures et la simulation.
APA, Harvard, Vancouver, ISO, and other styles
10

Wilcox, Edward. "Silicon-germanium devices and circuits for cryogenic and high-radiation space environments." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33850.

Full text
Abstract:
This work represents several years' research into the field of radiation hardening by design. The unique characteristics of a SiGe HBT, described in Chapter 1, make it ideally suitable for use in extreme environment applications. Chapter 2 describes the total ionizing dose effects experienced by a SiGe HBT, particularly those experienced on an Earth-orbital or lunar-surface mission. In addition, the effects of total dose are evaluated on passive devices. As opposed to the TID-hardness of SiGe transistors, a clear vulnerability to single-event effects does exist. This field is divided into three chapters. First, the very nature of single-event transients present in SiGe HBTs is explored in Chapter 3 using a heavy-ion microbeam with both bulk and SOI platforms [31]. Then, in Chapter 4, a new device-level SEU-hardening technique is presented along with circuit-design techniques necessarily for its implementation. In Chapter 5, the circuit-level radiation-hardening techniques necessarily to mitigate the effects shown in Chapter 3 are developed and tested [32]. Finally, in Chapter 6, the performance of the SiGe HBT in a cryogenic testing environment is characterized to understand how the widely-varying temperatures of outer space may affect device performance. Ultimately, the built-in performance, TID-tolerance, and now-developing SEU-hardness of the SiGe HBT make a compelling case for extreme environment electronics. The low-cost, high-yield, and maturity of Si manufacturing combine with modern bandgap engineering and modern CMOS to produce a high-quality, high-performance BiCMOS platform suitable for space-borne systems.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "Silicon carbide Effect of high temperatures on"

1

DellaCorte, Christopher. Tribological characteristics of silicon carbide whisker-reinforced alumina at elevated temperatures. [Washington, DC]: National Aeronautics and Space Administration, 1991.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

European Conference on High Temperature Electronics (3rd 1999 Berlin, Germany). HITEN 99: The Third European Conference on High Temperature Electronics. Abingdon, Oxfordshire, England: AEA Technology, 1999.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Nguyen, Nam-Trung, Toan Dinh, and Dzung Viet Dao. Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors. Springer, 2018.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

P, Herbell Thomas, and United States. National Aeronautics and Space Administration., eds. High-temperature effect of hydrogen on sintered alpha-silicon carbide. [Washington, DC]: National Aeronautics and Space Administration, 1987.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

P, Herbell Thomas, and United States. National Aeronautics and Space Administration., eds. High-temperature effect of hydrogen on sintered alpha-silicon carbide. [Washington, DC]: National Aeronautics and Space Administration, 1987.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Effects of high temperature argon heat treatment on tensile strength and microstructure of BN/SiC coated SiC fiber preforms. [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 1999.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

L, Chen Yuan, and NASA Glenn Research Center, eds. Effects of high temperature argon heat treatment on tensile strength and microstructure of BN/SiC coated SiC fiber preforms. [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 1999.

Find full text
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Silicon carbide Effect of high temperatures on"

1

Li, Yaqiong, Lifeng Zhang, and Zineb Benouahmane. "Effect of Oxidation on Wetting Behavior between Silicon and Silicon Carbide." In 7th International Symposium on High-Temperature Metallurgical Processing, 237–42. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-48093-0_30.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Li, Yaqiong, Lifeng Zhang, and Zineb Benouahmane. "Effect of Oxidation on Wetting Behavior Between Silicon and Silicon Carbide." In 7th International Symposium on High-Temperature Metallurgical Processing, 237–42. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2016. http://dx.doi.org/10.1002/9781119274643.ch30.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Kinoshita, Akimasa, Makoto Katou, Miwa Kawasaki, Kazutoshi Kojima, Kenji Fukuda, Kazuo Arai, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, and Teruyuki Yashima. "Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing." In Silicon Carbide and Related Materials 2005, 835–38. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.835.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Ahlborg, Nadia, and Dongming Zhu. "Silicon Carbide Nanotube Oxidation at High Temperatures." In Advanced Ceramic Coatings and Materials for Extreme Environments II, 89–97. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118217474.ch8.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Yoo, W. S., S. Nishino, and H. Matsunami. "Polytype Change of Silicon Carbide at High Temperatures." In Springer Proceedings in Physics, 35–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-75048-9_6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Zievers, E. C., J. F. Zievers, P. Eggerstedt, and P. Aguilar. "Substitution of Lightweight Ceramics for Alloy and Silicon Carbide in a Hot Gas Filter." In Gas Cleaning at High Temperatures, 142–57. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2172-9_10.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Zhou, Xin Gui, Hai Jiao Yu, Bo Yun Huang, Jian Gao Yang, and Ze Lan Huang. "Effect of Silicon Carbide Interlayers on the Mechanical Behavior of T800-HB-Fiber-Reinforced Silicon Carbide-Matrix Composites." In High-Performance Ceramics V, 1844–46. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/0-87849-473-1.1844.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Pérez-Tomás, A., Miquel Vellvehi, Narcis Mestres, José Millán, P. Vennegues, and J. Stoemenos. "Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion." In Silicon Carbide and Related Materials 2005, 1059–62. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1059.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Sekimoto, Yuki, Thanakorn Wasanapiarnpong, Masamitsu Imai, Keiichi Katayama, and Toyohiko Yano. "Effect of Heat-Treatment on Thermal and Mechanical Properties of Silicon Nitride Ceramic at Room and High Temperatures." In Innovation in Ceramic Science and Engineering, 35–39. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-454-5.35.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Rangaraj, Lingappa, Canchi Divakar, and Vikram Jayaram. "Processing of Ultra-High Temperature Ceramics for Hostile Environments." In MAX Phases and Ultra-High Temperature Ceramics for Extreme Environments, 100–124. IGI Global, 2013. http://dx.doi.org/10.4018/978-1-4666-4066-5.ch004.

Full text
Abstract:
A detailed review of the processing of zirconium, hafnium, and tantalum based boride-carbide-nitride composites is presented. The processing methodology and important steps involved in producing a pore-free microstructure are reported. The effect of addition of secondary and ternary compounds on densification is highlighted as is the reactive processing of ultra-high temperature ceramics (UHTCs) based on zirconium carbide through the formation of a transient non-stoichiometric carbide and transient liquid phase, which enable densification at much lower temperatures. The reactive processing method is promising in that it readily leads to variation in the composition of secondary/ternary non-oxide phases in the composites as well as the incorporation of fibres which may otherwise degrade. Since the processing temperatures are lower, the grain size obtained after densification is finer and may lead to better mechanical properties (hardness, fracture toughness, and strength). Processing of fibre based composites with boride particulates and silicon carbide through the ceramic precursor route are also discussed.
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Silicon carbide Effect of high temperatures on"

1

Yuri, I., T. Hisamatsu, Y. Etori, and T. Yamamoto. "Degradation of Silicon Carbide in Combustion Gas Flow at High-Temperature and Speed." In ASME Turbo Expo 2000: Power for Land, Sea, and Air. American Society of Mechanical Engineers, 2000. http://dx.doi.org/10.1115/2000-gt-0664.

Full text
Abstract:
Effects of various basic factors of combustion gas flow conditions on degradation behaviors of silicon carbide have been experimentally determined. The exposure tests were performed for widely varied experimental parameters of the gas temperatures (T = 900–1500°C), pressure (P = 0.3–0.8MPa), gas flow rate (V = 50–250m/s), water vapor partial pressure (PH2O = 32–82kPa) and oxygen partial pressure (PO2 = 24–44kPa). Degradation behaviors of silicon carbide were expressed as the weight loss of the substrate. The weight loss rate depends on the water vapor partial pressure remarkably. The effect of the oxygen partial pressure on the weight loss was smaller than that of the water vapor partial pressure, and the weight loss decreased with the increase of the oxygen partial pressure. Considering the effects of partial pressures of oxygen and water vapor, the gas temperature and the pressure didn’t have much effect on the weight loss. The weight loss depends on the gas flow rate, the increase rate of the weight loss for the gas flow rate becomes small with the gas flow rate. Consequently, the water vapor partial pressure, the oxygen partial pressure, the gas temperature, the pressure and the gas flow rate dependence of the weight loss rate is expressed as PH2O1.9 V0.6 P0.3 / PO20.6.
APA, Harvard, Vancouver, ISO, and other styles
2

Storm, R. S., W. D. G. Boecker, C. H. McMurtry, and M. Srinivasan. "Sintered Alpha Silicon Carbide Ceramics for High Temperature Structural Application: Status Review and Recent Developments." In ASME 1985 Beijing International Gas Turbine Symposium and Exposition. American Society of Mechanical Engineers, 1985. http://dx.doi.org/10.1115/85-igt-127.

Full text
Abstract:
The physical properties of sintered alpha silicon carbide are reviewed, including the effect of oxidation at high temperatures. Net shape fabricated components are described which have undergone extensive testing in heat engine applications. Properties of an SiC/TiB2 composite material, which has significantly improved fracture toughness, are presented.
APA, Harvard, Vancouver, ISO, and other styles
3

Veliadis, Victor, Ty McNutt, Megan McCoy, Harold Hearne, Paul Potyraj, and Charles Scozzie. "Large Area Silicon Carbide Vertical Junction Field Effect Transistors for High Temperature Power Conditioning Applications." In 2007 Vehicle Power and Propulsion Conference. IEEE, 2007. http://dx.doi.org/10.1109/vppc.2007.4544129.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Medyanik, S. N., and N. Vlahopoulos. "Atomistic Simulation Studies of the Effects of Defects on Thermal Properties of Ultra High Temperature Ceramics." In ASME 2016 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/imece2016-65389.

Full text
Abstract:
Due to the harsh environments created by high speeds, significant new demands are placed on materials used for constructing hypersonic vehicles. Ultra high temperature ceramics (UHTCs) like carbides and borides exhibit unique thermal properties, such as very high melting points and good thermal conductivities. These properties make the ceramic materials good candidates for applications like Thermal Protection Systems (TPS) of the hypersonic vehicles. However, thermal properties of UHTCs may be very sensitive to microstructures of the materials. Thus, atomic scale defects may impact certain thermal properties, such as thermal conductivity. The effects of such small defects may be properly studied only through atomistic simulation methods, such as molecular dynamics (MD). Previously, atomistic simulation studies have been performed for the effects of point defects on thermal properties in silicon carbide (SiC). In addition, atomistic simulations have been applied to assess thermal conductivity in zirconium diboride (ZrB2) for perfect crystals and polycrystals. However, to our knowledge, no studies of the effects of point defects have been performed for zirconium diboride. This paper applies atomistic simulations to assess the impact of point defects on thermal conductivity in ZrB2 perfect crystals. Recently derived interatomic potential for ZrB2 along with LAMMPS molecular simulation package and MedeA software environment are employed in this effort. Phonon part of the thermal conductivity is calculated using Green-Kubo method. Calculations for a perfect crystal are conducted first and the results are compared to experimental data available from the literature. Then, several types of point defects are considered (vacancies, substitutions, and interstitials) and their impact on the phonon conductivity is evaluated. It is found that even a small concentration of point defects may have substantial effect and result in a reduction in the thermal conductivity values by almost an order of magnitude. The obtained results are in good qualitative agreement with previous studies conducted for silicon carbide. The methodology which is utilized in this work, the modeling procedure, and the obtained results are discussed in this paper.
APA, Harvard, Vancouver, ISO, and other styles
5

Lu, Linyuan, LiHua Guo, Yajuan Zhong, Feng Zhang, and Jun Lin. "Numerical Simulation Analysis of Silicon Carbide Whiskers Doped Uranium Dioxide Composite Fuel for High Thermal Conductivity." In 2022 29th International Conference on Nuclear Engineering. American Society of Mechanical Engineers, 2022. http://dx.doi.org/10.1115/icone29-91804.

Full text
Abstract:
Abstract SiCw is expected to be candidate material for Accident Tolerant Fuel (ATF). Nevertheless, the distribution, morphology and size of SiCw have impacts on the thermal conductivity of composite fuels. An analysis model for UO2-SiCw was established using finite element method (FEM), and the effects of whisker orientation, size, volume fraction and aspect ratio on thermal conductivity were analyzed. The generation algorithm of SiCw was improved, and the results of thermal conductivity calculations showed that the improved model is closer to the experimental value. The effect of whisker orientation on thermal conductivity can be calculated by the cosine law of zenith angle and azimuth angle, and deriving a model for calculating thermal conductivity with specific whisker orientation. With the decrease of whisker size, the influence of Kapitza thermal resistance is significant. The formula used to calculate the whisker threshold diameter was deduced, and the results are in good agreement with the FEM results. With the increase of volume fraction of whiskers, the thermal conductivity increases linearly. For morphology, whiskers with high aspect ratio can achieve higher thermal conductivity. There is a value for the ratio of whisker length to matrix size, above which increasing whisker length will slow the increase in thermal conductivity (0.3 for whiskers along the direction of thermal conduction). The thermal conductivity of UO2-SiCw was optimized using the above conclusions, and the radial temperature distribution of pellet was analyzed. The results show that taking full advantage of the anisotropy of whisker heat transfer can significantly improve the thermal conductivity of composites and improve the operation condition of the pellet. The results can provide a good theoretical basis for designing whisker-doped composites with high thermal conductivity.
APA, Harvard, Vancouver, ISO, and other styles
6

Wang, Rong, and Ronghui Ma. "Computational Study of Reactive Flow in Halide Chemical Vapor Deposition of Silicon Carbide Epitaxial Film." In ASME 2008 Heat Transfer Summer Conference collocated with the Fluids Engineering, Energy Sustainability, and 3rd Energy Nanotechnology Conferences. ASMEDC, 2008. http://dx.doi.org/10.1115/ht2008-56313.

Full text
Abstract:
In this study, a comprehensive transport model is developed for Halide Chemical Vapor Deposition (HCVD) system which includes gas dynamics, heat and mass transfer, gas-phase and surface chemistry, and radio-frequency induction heating. This model addresses transport of multiple chemical species in high temperature environment with large temperature difference and complex chemical reactions in gas-phase and on the deposition surface. Numerical modeling of the deposition process in a horizontal hot-wall reactor using SiCl4/C3H8/H2 as precursors has been performed over a wide range of operational parameters to quantify the effects of processing parameters on the film growth. The simulations of the deposition process provide detailed information on the gas-phase composition as well as the distributions of gas velocity and temperature in the reactor. The deposition rate on the substrate surface is also predicted. The results illustrate that deposition temperature and the flow rate of carrier gas play an important role in determining the processing conditions and deposition rate. A high concentration of HCl exists in the growth chamber and the etching of the SiC films by HCl has significant effect on the deposition rate. The modeling approach can be further used to improve reactor design and optimization of processing conditions.
APA, Harvard, Vancouver, ISO, and other styles
7

Carter, Jason A., Matthew D. Roth, Michael W. Horgan, Lisa Shellenberger, Daniel P. Hoffmann, and Mark D. Stitt. "Construction of a Broad-Based Experimental and Computational Test Capability for High Power Wide Bandgap Semiconductor Devices." In ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference collocated with the ASME 2007 InterPACK Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ht2007-32127.

Full text
Abstract:
In this paper, the authors will discuss the development and implementation of a test stand to assess the impact of temperature on the performance of commercial X-band gallium nitride (GaN) on silicon carbide (SiC) high electron mobility transistors (HEMTs) designed for radio frequency (RF) communications platforms. The devices are tested under a range of operating temperatures and under a range of electrical operating conditions of variable gate and source-drain voltages to assess the impact of temperature on core operational parameters of the device such as channel resistance and transconductance. This test capability includes infrared thermography and transient thermal impedance measurements of the device. In addition to the experimental effort, the initial construction of a finite-volume numerical analysis model of the device will be discussed. The focus of these models will be the accurate assessment of device thermal impedance based on assumed thermal loads and eventually the assessment of accumulated thermal stresses at the material interfaces within the device and package structure.
APA, Harvard, Vancouver, ISO, and other styles
8

Smith, Craig, Michael Presby, Ramakrishna Bhatt, and Sreeramesh Kalluri. "The Effects of Cooling Holes on SiC/SiC CMC Tensile Strength." In ASME Turbo Expo 2020: Turbomachinery Technical Conference and Exposition. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/gt2020-15682.

Full text
Abstract:
Abstract Silicon Carbide fiber-reinforced Silicon Carbide (SiC/SiC) Ceramic Matrix Composites (CMCs) are currently operating in select high temperature components of turbine engines. Primary benefits of CMCs compared to metals are improved temperature capability, reduced cooling requirements and reduced component weight. High temperature materials require less cooling air to be diverted from the compressor, resulting in improved engine performance. However, some amount of film cooling may be necessary when CMCs are implemented in higher temperature applications. Film cooling requires holes to be fabricated at appropriate locations and orientations within these components. It is important to understand how such holes will affect the material properties. While previous studies have shown that CMCs are notch insensitive, the effect of multiple holes and different hole orientations on SiC/SiC CMCs is not well documented. This study examines the effect of cooling holes on SiC/SiC tensile properties. Several hole geometries fabricated in SiC/SiC samples are explored. Mechanical test data on specimens with multiple holes is reported for tensile loading at room temperature. Tools such as Digital Image Correlation (DIC) and Acoustic Emission (AE) are used to monitor strain and cracking in the CMC upon loading.
APA, Harvard, Vancouver, ISO, and other styles
9

Makarian, Kamran, Sridhar Santhanam, and Zachary N. Wing. "Experimental Characterization of Thermal Shock Resistance of Refractories Reinforced by Silicon-Carbide and Zirconia Particles." In ASME 2017 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/imece2017-71886.

Full text
Abstract:
Zirconia and Silicon-carbide based castable composites are both known to be reliable, high-temperature refractory materials, capable of withstanding damage caused by thermal shock. There exists a growing body of literature regarding micro-scale as well as macro-scale properties of each aforementioned type. In the present work, we have investigated these refractory castables using different volume fractions of ZrO2 and SiC particles and have made a comparison between their thermal shock responses. Equivalent homogeneous material properties including elastic modulus, crushing strength and modulus of rupture (MOR) are determined experimentally, and thermal shock experiments at 900°C are conducted to determine the effect of the compositions on the propensity of these castables to survive thermal shock. The experimental findings were compared to predictions made by thermal shock indices and the two were in good agreements. Applying thermal shock cycle in all cases showed a drop in strength and elastic modulus of the material.
APA, Harvard, Vancouver, ISO, and other styles
10

Murthy, Pappu L. N., Subodh K. Mital, John Z. Gyekenyesi, and John P. Gyekenyesi. "Reliability and Creep/Fatigue Analysis of a CMC Component." In ASME Turbo Expo 2007: Power for Land, Sea, and Air. ASMEDC, 2007. http://dx.doi.org/10.1115/gt2007-28225.

Full text
Abstract:
High temperature ceramic matrix composites (CMC) are being explored as viable candidate materials for hot section gas turbine components. These advanced composites can potentially lead to reduced weight and enable higher operating temperatures requiring less cooling; thus leading to increased engine efficiencies. There is a need for convenient design tools that can accommodate various loading conditions and material data with their associated uncertainties to estimate the minimum predicted life as well as the failure probabilities of a structural component. A computer code, NASALife, is used to predict the life of a 2-D woven silicon carbide fiber reinforced silicon carbide matrix (SiC/SiC) turbine stator vane due to a mission cycle which induces low cycle fatigue and creep. The output from this program includes damage from creep loading, damage due to cyclic loading and the combined damage due to the given loading cycle. Results indicate that the trends predicted by NASALife are as expected for the loading conditions used for this study. In addition, a combination of woven composite micromechanics, finite element structural analysis and Fast Probability Integration (FPI) techniques has been used to evaluate the maximum stress and its probabilistic distribution in a CMC turbine stator vane. Input variables causing scatter are identified and ranked based upon their sensitivity magnitude. Results indicate that reducing the scatter in proportional limit strength of the vane material has the greatest effect in improving the overall reliability of the CMC vane.
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Silicon carbide Effect of high temperatures on' for particular source types:
Journal articles Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography