Journal articles: 'Silicon Based Nanostructure'

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Yang, Xiaoyu, Ling Tong, Lin Wu, Baoguo Zhang, Zhiyuan Liao, Ao Chen, Yilai Zhou, Ying Liu, and Ya Hu. "Research progress of carbon-assisted etching of silicon nanostructures." Journal of Physics: Conference Series 2076, no. 1 (November 1, 2021): 012060. http://dx.doi.org/10.1088/1742-6596/2076/1/012060.

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Abstract Silicon nanostructures are attracting growing attention due to their properties and promising application prospects in solar energy conversion and storage devices, thermoelectric devices, lithium-ion batteries, and biosensing technologies. The large-scale and low-cost preparation of silicon nanostructures is critical for silicon-based advanced functional devices commercialization. In this paper, the feasibility and mechanism of silicon nanostructure fabricated by non-metallic carbon catalytic etching, as well as the currently existing problems and future development trend are reviewed.

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He, Minghao, Mingzhao Li, and Zeyu Sun. "The Development of Si Anode Materials by Nanotechnology for Lithium-ion Battery." E3S Web of Conferences 308 (2021): 01007. http://dx.doi.org/10.1051/e3sconf/202130801007.

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Nowadays, lithium-ion batteries (LIBs) are applied in many fields for their high energy density, low cost, and long cycle life, highly appreciated in a commercial application. Anode materials, a vital factor contributing to high specific capacity, have caught great attention in next-generation LIBs development. Silicon (Si) has been generally considered one of the best substitutes for the commercial carbon-based anodes of lithium-ion batteries due to its extremely high theoretical capacity, excellent charge-discharge performance, and low cost compared with other anode materials. In this review, various silicon-based materials, including nanostructured silicon and silicon composite materials, are summarized, and both advantages and challenges are analyzed. The article emphasizes the remarkable electrochemical characteristics and significant improvement of battery performance by applying nanostructure and silicon composites conjugates. Besides, the challenges and outlook on the nanostructure design of Si and silicon composites are presented.

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Bhalla, Nikhil, Aditya Jain, Yoonjoo Lee, Amy Q. Shen, and Doojin Lee. "Dewetting Metal Nanofilms—Effect of Substrate on Refractive Index Sensitivity of Nanoplasmonic Gold." Nanomaterials 9, no. 11 (October 27, 2019): 1530. http://dx.doi.org/10.3390/nano9111530.

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The localized surface plasmon resonance (LSPR) sensitivity of metal nanostructures is strongly dependent on the interaction between the supporting substrate and the metal nanostructure, which may cause a change in the local refractive index of the metal nanostructure. Among various techniques used for the development of LSPR chip preparation, solid-state dewetting of nanofilms offers fast and cost effective methods to fabricate large areas of nanostructures on a given substrate. Most of the previous studies have focused on the effect of the size, shape, and inter-particle distance of the metal nanostructures on the LSPR sensitivity. In this work, we reveal that the silicon-based supporting substrate influences the LSPR associated refractive index sensitivity of gold (Au) nanostructures designed for sensing applications. Specifically, we develop Au nanostructures on four different silicon-based ceramic substrates (Si, SiO2, Si3N4, SiC) by thermal dewetting process and demonstrate that the dielectric properties of these ceramic substrates play a key role in the LSPR-based refractive index (RI) sensitivity of the Au nanostructures. Among these Si-supported Au plasmonic refractive index (RI) sensors, the Au nanostructures on the SiC substrates display the highest average RI sensitivity of 247.80 nm/RIU, for hemispherical Au nanostructures of similar shapes and sizes. Apart from the significance of this work towards RI sensing applications, our results can be advantageous for a wide range of applications where sensitive plasmonic substrates need to be incorporated in silicon based optoelectronic devices.

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Mo, Chen, Jingbo Liu, Dongshan Wei, Honglei Wu, Qiye Wen, and Dongxiong Ling. "An Optically Tunable THz Modulator Based on Nanostructures of Silicon Substrates." Sensors 20, no. 8 (April 13, 2020): 2198. http://dx.doi.org/10.3390/s20082198.

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Nanostructures can induce light multireflection, enabling strong light absorption and efficient photocarrier generation. In this work, silicon nanostructures, including nanocylinders, nanotips, and nanoholes, were proposed as all-optical broadband THz modulators. The modulation properties of these modulators were simulated and compared with finite element method calculations. It is interesting to note that the light reflectance values from all nanostructure were greatly suppressed, showing values of 26.22%, 21.04%, and 0.63% for nanocylinder, nanohole, and nanotip structures, respectively, at 2 THz. The calculated results show that under 808 nm illumination light, the best modulation performance is achieved in the nanotip modulator, which displays a modulation depth of 91.63% with a pumping power of 60 mW/mm2 at 2 THz. However, under shorter illumination wavelengths, such as 532 nm, the modulation performance for all modulators deteriorates and the best performance is found with the nanohole-based modulator rather than the nanotip-based one. To further clarify the effects of the nanostructure and wavelength on the THz modulation, a graded index layer model was established and the simulation results were explained. This work may provide a further theoretical guide for the design of optically tunable broadband THz modulators.

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Galeotti, Francesco, Franco Trespidi, and Mariacecilia Pasini. "Breath Figure-Assisted Fabrication of Nanostructured Coating on Silicon Surface and Evaluation of Its Antireflection Power." Journal of Nanomaterials 2016 (2016): 1–8. http://dx.doi.org/10.1155/2016/3502310.

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We report our recent results on the fabrication of nanostructured polymer layers aimed at developing efficient antireflection coating on silicon. The proposed manufacturing approach is based on self-assembly and relies on breath figure formation. By simple and straightforward operations, we are able to produce different nanostructured coatings: densely packed nanodomes, randomly distributed nanopores, and multilayered close-packed nanopores. By optical reflectivity measurements on coated silicon wafers, we show that the latter type of nanostructure is able to reduce the reflectivity of standard silicon surface (≈40% at 450 nm) to about 10%.

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Wallace, Steaphan M., Thiyagu Subramani, Wipakorn Jevasuwan, and Naoki Fukata. "Conversion of Amorphous Carbon on Silicon Nanostructures into Similar Shaped Semi-Crystalline Graphene Sheets." Journal of Nanoscience and Nanotechnology 21, no. 9 (September 1, 2021): 4949–54. http://dx.doi.org/10.1166/jnn.2021.19329.

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Graphene sheets displaying partial crystallinity and nanowire structures were formed on a silicon substrate with silicon nanowires by utilizing an amorphous carbon source. The carbon source was deposited onto the silicon nanostructured substrate by breaking down a polymer precursor and was crystallized by a nickel catalyst during relatively low temperature inert gas annealing. The resulting free-standing graphene-based material can remain on the substrate surface after catalyst removal or can be removed as a separate film. The film is flexible, continuous, and closely mimics the silicon nanostructure. This follows research on similar solid carbon precursor derived semi-crystalline graphene synthesis procedures and applies it to complex silicon nanostructures. This work examined the progression of the carbon, finding that it migrates through the thin film catalyst and forms the graphene only on the other side, and that the process can successfully be used to form 3D shaped graphene films. Semi-crystalline graphene has the possible application of being flexible transparent electrodes, and the 3D shaping opens the possibility of more complex configurations and applications.

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Gupta, N., G. F. Alapatt, R. Podila, R. Singh, and K. F. Poole. "Prospects of Nanostructure-Based Solar Cells for Manufacturing Future Generations of Photovoltaic Modules." International Journal of Photoenergy 2009 (2009): 1–13. http://dx.doi.org/10.1155/2009/154059.

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We present a comprehensive review on prospects for one-, two-, or three-dimensional nanostructure-based solar cells for manufacturing the future generation of photovoltaic (PV) modules. Reducing heat dissipation and utilizing the unabsorbed part of the solar spectrum are the key driving forces for the development of nanostructure-based solar cells. Unrealistic assumptions involved in theoretical work and the tendency of stretching observed experimental results are the primary reasons why quantum phenomena-based nanostructures solar cells are unlikely to play a significant role in the manufacturing of future generations of PV modules. Similar to the invention of phase shift masks (to beat the conventional diffraction limit of optical lithography) clever design concepts need to be invented to take advantage of quantum-based nanostructures. Silicon-based PV manufacturing will continue to provide sustained growth of the PV industry.

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BAI, J., and X. C. ZENG. "SILICON-BASED HALF-METAL: METAL-ENCAPSULATED SILICON NANOTUBE." Nano 02, no. 02 (April 2007): 109–14. http://dx.doi.org/10.1142/s179329200700043x.

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We performed first-principles calculation to show that a host–guest silicon nanostructure can exhibit half-metallic properties, wherein the host is a single-walled hexagonal silicon nanotube while the guest is a hybrid atomic chain of Mn and Co (encapsulated in the host nanotube). The calculated electronic band structures indicate that the Fermi level intersects only in the spin-up band, whereas the spin-down band exhibits semiconducting characteristics.

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Azmi, M. Safwan, Sharipah Nadzirah, and Uda Hashim. "Fabrication of Nanostructure-Based Copper Oxide Biosensor." Advanced Materials Research 1109 (June 2015): 376–80. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.376.

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The purpose of this paper is to give a review of the fabrication of nanostructure-based copper oxide biosensor. This paper briefly covers processes from silicon wafer cleaning, oxidation process, silicon nitride deposition, aluminum metal deposition, pattern transfer, copper oxide sol-gel preparation and coating and lastly IV testing with the results expected from the completed device.Keywords: Nanostruture, copper oxide, biosensor, sol-gel, current-voltage testing.

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Al-AJILI, ADWAN. "CONTINUOUS-WAVE PHOTOLUMINESCENCE AND NANOSTRUCTURAL PROPERTIES OF POROUS SILICON." International Journal of Nanoscience 08, no. 03 (June 2009): 311–18. http://dx.doi.org/10.1142/s0219581x09006079.

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The photoluminescence (PL) emitted by porous silicon has been investigated by using the continuous tuneable UV Synchrotron Radiation Source. One sample was investigated for orange PL emission wavelength at temperatures 77–295 K. The PL peak is found to shift to higher frequency with decreasing temperature. Information about the nanostructure of porous silicon has been determined from PL and Extended X-ray Absorption Fine Structure (EXAFS), as well as from electron microscopy. In particular, the optical properties of silicon-based nanostructured materials, obtained from PL and photoluminescence excitation measurements, have been correlated with structural information from Si –K-edge EXAFS. Electron microscopy was used to study the relation between the nanostructure and PL of porous Si , and to investigate porous Si structure. Platelet Si and Si crystallites in porous Si layers were observed. The size of crystallites ranged from 4 to 6.5 nm. Diffraction patterns show these porous Si samples have a crystalline structure.

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Cai, Jinguang, and Limin Qi. "Recent advances in antireflective surfaces based on nanostructure arrays." Materials Horizons 2, no. 1 (2015): 37–53. http://dx.doi.org/10.1039/c4mh00140k.

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This review summarizes recent advances in the fabrication, performance, and applications of antireflective surfaces based on nanostructure arrays (NSAs) of silicon and non-silicon materials. The remaining challenges in NSA-based antireflective surfaces are also discussed.

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Chin, Lip Ket, Yuzhi Shi, and Ai-Qun Liu. "Optical Forces in Silicon Nanophotonics and Optomechanical Systems: Science and Applications." Advanced Devices & Instrumentation 2020 (October 26, 2020): 1–14. http://dx.doi.org/10.34133/2020/1964015.

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Light-matter interactions have been explored for more than 40 years to achieve physical modulation of nanostructures or the manipulation of nanoparticle/biomolecule. Silicon photonics is a mature technology with standard fabrication techniques to fabricate micro- and nano-sized structures with a wide range of material properties (silicon oxides, silicon nitrides, p- and n-doping, etc.), high dielectric properties, high integration compatibility, and high biocompatibilities. Owing to these superior characteristics, silicon photonics is a promising approach to demonstrate optical force-based integrated devices and systems for practical applications. In this paper, we provide an overview of optical force in silicon nanophotonic and optomechanical systems and their latest technological development. First, we discuss various types of optical forces in light-matter interactions from particles or nanostructures. We then present particle manipulation in silicon nanophotonics and highlight its applications in biological and biomedical fields. Next, we discuss nanostructure mechanical modulation in silicon optomechanical devices, presenting their applications in photonic network, quantum physics, phonon manipulation, physical sensors, etc. Finally, we discuss the future perspective of optical force-based integrated silicon photonics.

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Čaplovičová, Mária, Ľubomír Čaplovič, Dalibor Búc, Peter Vinduška, and Ján Janík. "Carbon Nanostructures Grown on Fe-Cr-Al Alloy." Journal of Electrical Engineering 61, no. 6 (November 1, 2010): 373–77. http://dx.doi.org/10.2478/v10187-010-0057-9.

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Carbon Nanostructures Grown on Fe-Cr-Al Alloy The morphology and nanostructure of carbon nanotubes (CNTs), synthesized directly on Fe-Cr-Al-based alloy substrate using an alcohol catalytic chemical vapour deposition method (ACCVD), were examined by transmission electron microscopy (TEM). The grown CNTs were entangled with chain-like, bamboo-like, and necklace-like morphologies. The CNT morphology was affected by the elemental composition of catalysts and local instability of deposition process. Straight and bended CNTs with bamboo-like nanostructure grew mainly on γ-Fe and Fe3C particles. The synthesis of necklace-like nanostructures was influenced by silicon oxide, and growth of chain-like nanostructures was supported by a catalysts consisting of Fe, Si, oxygen and trace of Cr. Most of nanotubes grew according to base growth mechanism.

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Bagraev N. T., Kukushkin S. A., Osipov A. V., Klyachkin L. E., Malyarenko A. M., and Khromov V. S. "Registration of terahertz irradiation with silicon carbide nanostructures." Semiconductors 55, no. 14 (2022): 2157. http://dx.doi.org/10.21883/sc.2022.14.53862.9620.

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The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is investigated. The kinetic dependence of the longitudinal voltage is recorded at room temperature by varying the drain-source current in the device structure performed in a Hall geometry. In the frameworks of proposed model based on the quantum Faraday effect the incident radiation results in the appearance of a generated current in the edge channels with a change in the number of magnetic flux quanta and in the appearance of features in the kinetic dependence of the longitudinal voltage. The generation of intrinsic terahertz irradiation inside the silicon carbide nanostructures is also revealed by the electrically-detected electron paramagnetic resonance (EDEPR) measured the longitudinal voltage as a function of the magnetic field value. Keywords: silicon carbide on silicon, terahertz irradiation, nanostructure, electrically-detected EPR, quantum Faraday effect.

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Huang, Qiuming, Guangyao Liu, and Zehao Xie. "Properties of silicon-based lithium batteries with different electrode nanostructures." Journal of Physics: Conference Series 2355, no. 1 (October 1, 2022): 012069. http://dx.doi.org/10.1088/1742-6596/2355/1/012069.

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Abstract Among the energy storage devices, lithium-based batteries demonstrate extraordinary performance, which makes them a promising substitution for fossil fuels. Although lithium-based batteries are now used on a large scale, there are still some drawbacks in the basic components of the battery that limit its further application In recent decades, researchers have focused greatly on the refinement of the nanostructure of electrode materials. Nanostructures are highly promising candidates for solving these problems of the lithium-based battery, whose large specific area, considerable active points, and many extraordinary properties derived from its minimum size, especially gather attention from researchers. This review article will emphasize the strategies used by researchers to help them overcome the drawbacks they face. Moreover, this review discusses these strategies at the level of different dimensions, which helps us to optimize the design of lithium batteries from a more integrated perspective. To give a clearer picture of the lithium-based battery developments, this review also summarizes the recent advancement of nanostructures applied in lithium-based batteries

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Li, D. X., and J. Y. Feng. "Computational design of silicon-based direct-band gap nanostructure: Silicon nanonet." Applied Physics Letters 92, no. 24 (June 16, 2008): 243117. http://dx.doi.org/10.1063/1.2945885.

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Jamwal, Nishant Singh, and Amirkianoosh Kiani. "Synthesis of Optoelectronic Nanostructures on Silicon and Gold-Coated Silicon via High-Intensity Laser Pulses at Varied Pulse Durations." Coatings 13, no. 2 (February 7, 2023): 375. http://dx.doi.org/10.3390/coatings13020375.

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This work defines the generation of nanostructures on silicon and gold-coated silicon substrates by tuning the pulse duration of our proposed method: ultra-short laser pulses for in situ nanostructure generation (ULPING) under ambient conditions. The method is a single-step novel method which is efficient in synthesizing nanostructures on the substrates. We observed a higher nanofiber generation at a shorter pulse duration using Scanning Electron Microscopy (SEM) imaging. Silicon oxide formation was confirmed by Energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) analysis and a band gap of 8.19 eV was achieved for the Si + Au sample, which was determined by the Reflection Electron Energy Loss Spectroscopy (REELS) spectra. A high valence band offset of 4.93 eV was measured for the silicon-based samples for the Si/SiO2 interface. The addition of gold nanoparticles decreased the band gap and we observed a blue shift in optical conductivity for samples with nanofibers using optical spectroscopy.

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Huang, Bohr-Ran, Ying-Kan Yang, and Wen-Luh Yang. "Efficiency improvement of silicon nanostructure-based solar cells." Nanotechnology 25, no. 3 (December 20, 2013): 035401. http://dx.doi.org/10.1088/0957-4484/25/3/035401.

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Yin, Xiaowei, Fengli Liu, Wentao Qiu, Can Liu, Heyuan Guan, and Huihui Lu. "Electric Field Sensor Based on High Q Fano Resonance of Nano-Patterned Electro-Optic Materials." Photonics 9, no. 6 (June 17, 2022): 431. http://dx.doi.org/10.3390/photonics9060431.

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This paper presents theoretical studies of Fano resonance based electric-field (E-field) sensors. E-field sensor based on two electro-optical (EO) materials i.e., barium titanate (BaTiO3, BTO) nanoparticles and relaxor ferroelectric material Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) combined with nanostructure are studied. As for the BTO based E-field sensor, a configuration of filling the BTO nanoparticles into a nano-patterned thin film silicon is proposed. The achieved resonance quality factor (Q) is 11,855 and a resonance induced electric field enhancement factor is of around 105. As for the design of PMN-PT based E-field sensor, a configuration by combining two square lattice air holes in PMN-PT thin film but with one offsetting hole left is chosen. The achieved resonance Q is of 9,273 and an electric field enhancement factor is of around 96. The resonance wavelength shift sensitivity of PMN-PT nanostructured can reach up to 4.768 pm/(V/m), while the BTO based nanostructure has a sensitivity of 0.1213 pm/(V/m). If a spectrum analyzer with 0.1 pm resolution is considered, then the minimum detection of the electric field Emin is 20 mV/m and 0.82 V/m for PMN-PT and BTO based nanostructures, respectively. The nano-patterned E-field sensor studied here are all dielectric, it has therefore the advantage of large measurement bandwidth, high measurement fidelity, high spatial resolution and high sensitivity.

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Liu, Shikun, Wen He, Xudong Zhang, Haiming Li, Shuzhen Zhang, and Yan Wang. "Novel Nanostructure Designs for High-Performance Silicon Based Anodes." Energy and Environment Focus 4, no. 3 (September 1, 2015): 178–90. http://dx.doi.org/10.1166/eef.2015.1169.

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Vu, Van Thu, Duc Chien Nguyen, Hong Duong Pham, Anh Tuan Chu, and Thanh Huy Pham. "Fabrication of a silicon nanostructure-based light emitting device." Advances in Natural Sciences: Nanoscience and Nanotechnology 1, no. 2 (June 1, 2010): 025006. http://dx.doi.org/10.1088/2043-6254/1/2/025006.

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Mehran, M., and S. Mohajerzadeh. "High sensitivity nanostructure incorporated interdigital silicon based capacitive accelerometer." Microelectronics Journal 46, no. 2 (February 2015): 166–73. http://dx.doi.org/10.1016/j.mejo.2014.10.008.

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Aggour, M., K. Skorupska, T. Stempel Pereira, H. Jungblut, J. Grzanna, and H. J. Lewerenz. "Photoactive Silicon-Based Nanostructure by Self-Organized Electrochemical Processing." Journal of The Electrochemical Society 154, no. 9 (2007): H794. http://dx.doi.org/10.1149/1.2756366.

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Schlur, Laurent, Pierre Agostini, Guillaume Thomas, Geoffrey Gerer, Jacques Grau, and Denis Spitzer. "Detection of Organophosphorous Chemical Agents with CuO-Nanorod-Modified Microcantilevers." Sensors 20, no. 4 (February 15, 2020): 1061. http://dx.doi.org/10.3390/s20041061.

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Microcantilevers are really promising sensitive sensors despite their small surface. In order to increase this surface and consequently their sensitivity, we nanostructured them with copper oxide (CuO) nanorods. The synthesis of the nanostructure consists of the oxidation of a copper layer deposited beforehand on the surface of the sample. The oxidation is performed in an alkaline solution containing a mixture of Na(OH) and (NH4)2S2O8. The synthesis procedure was first optimized on a silicon wafer, then transferred to optical cantilever-based sensors. This transfer requires specific synthesis modifications in order to cover all the cantilever with nanorods. A masking procedure was specially developed and the copper layer deposition was also optimized. These nanostructured cantilevers were engineered in order to detect vapors of organophosphorous chemical warfare agents (CWA). The nanostructured microcantilevers were exposed to various concentration of dimethyl methylphosphonate (DMMP) which is a well-known simulant of sarin (GB). The detection measurements showed that copper oxide is able to detect DMMP via hydrogen interactions. The results showed also that the increase of the microcantilever surface with the nanostructures improves the sensors efficiency. The evolution of the detection performances of the CuO nanostructured cantilevers with the DMMP concentration was also evaluated.

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Xiu, Fei, Hao Lin, Ming Fang, Guofa Dong, Senpo Yip, and Johnny C. Ho. "Fabrication and enhanced light-trapping properties of three-dimensional silicon nanostructures for photovoltaic applications." Pure and Applied Chemistry 86, no. 5 (May 19, 2014): 557–73. http://dx.doi.org/10.1515/pac-2013-1119.

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AbstractIn order to make photovoltaics an economically viable energy solution, next-generation solar cells with higher energy conversion efficiencies and lower costs are urgently desired. Among many possible solutions, three-dimensional (3D) silicon nanostructures with excellent light-trapping properties are one of the promising candidates and have recently attracted considerable attention for cost-effective photovoltaic applications. This is because their enhanced light-trapping characteristics and high carrier collection efficiencies can enable the use of cheaper and thinner silicon materials. In this review, recent developments in the controllable fabrication of 3D silicon nanostructures are summarized, followed by the investigation of optical properties on a number of different nanostructures, including nanowires, nanopillars, nanocones, nanopencils, and nanopyramids, etc. Even though nanostructures with radial p-n junction demonstrate excellent photon management properties and enhanced photo-carrier collection efficiencies, the photovoltaic performance of nanostructure-based solar cells is still significantly limited due to the high surface recombination effect, which is induced by high-density surface defects as well as the large surface area in high-aspect-ratio nanostructures. In this regard, various approaches in reducing the surface recombination are discussed and an overall geometrical consideration of both light-trapping and recombination effects to yield the best photovoltaic properties are emphasized.

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Zaumseil, Peter, Markus Andreas Schubert, Yuji Yamamoto, Oliver Skibitzki, Giovanni Capellini, and Thomas Schroeder. "Misfit Dislocation Free Epitaxial Growth of SiGe on Compliant Nano-Structured Silicon." Solid State Phenomena 242 (October 2015): 402–7. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.402.

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The integration of germanium (Ge) into silicon-based microelectronics technologies is currently attracting increasing interest and research effort. One way to realize this without threading and misfit dislocations is the so-called nanoheteroepitaxy approach. We demonstrate that a modified Si nanostructure approach with nanopillars or bars separated by TEOS SiO2 can be used successfully to deposit SiGe dots and lines free of misfit dislocations. It was found that strain relaxation in the pseudomorphically grown SiGe happens fully elastically. These studies are important for the understanding of the behavior of nanostructured Si for the final goal of Ge integration via SiGe buffer.

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Sun, Tangyou, Furong Shui, Taohua Ning, Wenjing Guo, Zhiping Zhou, Zanhui Chen, Cheng Qian, and Qian Li. "Tunable Antireflection Properties with Self-Assembled Nanopillar and Nanohole Structure." Nanomaterials 12, no. 24 (December 15, 2022): 4466. http://dx.doi.org/10.3390/nano12244466.

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Nanostructure engineering has proven to be one of the most effective strategies to improve the efficiency of photoelectric devices. Herein, we numerically investigate and experimentally demonstrate a self-assembled silicon-based nanopillars and nanoholes structures, to improve the light absorption of photoelectric devices by an antireflection enhancement. The nanopillars and nanoholes structures are fabricated by the air–liquid interface self-assembly method based on polystyrene (PS) nanospheres. Additionally, the tunable antireflective properties with the different operation wavelength and nanostructures parameters have been discussed based on the Finite-Difference Time-Domain (FDTD) method. The experimental result shows that the self-assembled silicon-based nanopillars and nanoholes structures can achieve the lowest reflectivity of 1.42% (nanopillars) and 5.83% (nanoholes) in the wavelength range of 250–800 nm, which reduced 95.97% and 84.83%, respectively, compared with the plane silicon. The operation mechanism of the tunable antireflective property of self-assembled nanopillars and nanoholes structures is also analyzed in the simulation. Our study suggests that the self-assembled nanopillars and nanoholes structures are potentially attractive as improving efficiency of photoelectric devices.

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Agbo, Solomon, Pavol Sutta, Pavel Calta, Rana Biswas, and Bicai Pan. "Crystallized silicon nanostructures — experimental characterization and atomistic simulations." Canadian Journal of Physics 92, no. 7/8 (July 2014): 783–88. http://dx.doi.org/10.1139/cjp-2013-0442.

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We have synthesized silicon nanocrystalline structures from thermal annealing of thin film amorphous silicon-based multilayers. The annealing procedure that was carried out in vacuum at temperatures up to 1100 °C is integrated in a X-ray diffraction (XRD) setup for real-time monitoring of the formation phases of the nanostructures. The microstructure of the crystallized films is investigated through experimental measurements combined with atomistic simulations of realistic nanocrystalline silicon (nc-Si) models. The multilayers consisting of uniformly alternating thicknesses of hydrogenated amorphous silicon and silicon oxide (SiO2) were deposited by plasma enhanced chemical vapor deposition on crystalline silicon and Corning glass substrates. The crystallized structure consisting of nc-Si structures embedded in an amorphous matrix were further characterized through XRD, Raman spectroscopy, and Fourier transform infrared measurements. We are able to show the different stages of nanostructure formation and how the sizes and the crystallized mass fraction can be controlled in our experimental synthesis. The crystallized silicon structures with large crystalline filling fractions exceeding 50% have been simulated with a robust classical molecular dynamics technique. The crystalline filling fractions and structural order of nc-Si obtained from this simulation are compared with our Raman and XRD measurements.

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Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, and Huang Rui. "Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices." Acta Physica Sinica 63, no. 3 (2014): 037801. http://dx.doi.org/10.7498/aps.63.037801.

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Si, Jiangnan, Shuang Liu, Weiji Yang, Xuanyi Yu, Jialin Zhang, and Xiaoxu Deng. "Broadened Angle-Insensitive Near-Perfect Absorber Based on Mie Resonances in Amorphous Silicon Metasurface." Nanomaterials 10, no. 9 (September 1, 2020): 1733. http://dx.doi.org/10.3390/nano10091733.

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A broadband near-perfect absorber is analyzed by an amorphous silicon (a-Si) hook shaped nanostructure metasurface. The transmission and reflection coefficients of the metasurface are investigated in the point electric and magnetic dipole approximation. By combining square and semicircle nanostructures, the effective polarizabilities of the a-Si metasurface calculated based on discrete dipole approximation (DDA) exhibit broadened peaks of electric dipole (ED) and magnetic dipole (MD) Mie resonances. The optical spectra of the metasurface are simulated with different periods, in which suppressed transmission are shifted spectrally to overlap with each other, leading to broadened enhanced absorption induced by interference of ED and MD Mie resonances. The angle insensitive absorption of the metasurface arrives 95% in simulation and 85% in experiment in spectral range from 564 nm to 584 nm, which provides potential applicability in nano-photonic fields of energy harvesting and energy collection.

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Yang, Xiaoyu, Ling Tong, Lin Wu, Baoguo Zhang, Zhiyuan Liao, Ao Chen, Yilai Zhou, Ying Liu, and Ya Hu. "Research progress of silicon nanostructures prepared by electrochemical etching based on galvanic cells." Journal of Physics: Conference Series 2076, no. 1 (November 1, 2021): 012117. http://dx.doi.org/10.1088/1742-6596/2076/1/012117.

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Abstract Metal-assisted etching of silicon in HF aqueous solution has attracted widespread attention due to its potential applications in electronics, photonics, renewable energy, and biotechnology. In this paper, the basic process and mechanism of metal assisted electrochemical etching of silicon in vapor or liquid atmosphere based on galvanic cells are reviewed. This paper focuses on the use of gas-phase oxidants O2 and H2O2 instead of liquid phase oxidants Fe(NO3)3 and H2O2 to catalyze the etching of silicon in the vapor atmosphere of HF aqueous solution. The mechanism of substrate enhanced metal-assisted chemical etching for the preparation of large-area silicon micro nanostructure arrays is summarized, and the impact of substrate type and surface area on reactive etching is discussed.

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Pezzotti, Giuseppe. "Measurements of Microscopic Stresses in Si-Based Polycrystalline Ceramics." Key Engineering Materials 287 (June 2005): 438–48. http://dx.doi.org/10.4028/www.scientific.net/kem.287.438.

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Many of the properties of Si-based ceramics, including their structural behavior, are strongly influenced by their micro/nanostructure and by the microscopic residual stress fields piled up during processing and/or usage. The electron beam, used as a sharp and reliable probe for high-resolution cathodoluminescence (CL) assessments, can routinely provide a suitable tool for assessing both the structural and the mechanical characteristics of Si-based ceramics on a sub-micrometer scale. Although the full development of stress-related CL techniques is still in embryo, we show here the possibility of assessing microscopic stress fields inside a field-emission gun scanning electron microscope (FEG-SEM). This new assessment takes advantage of the piezo-spectroscopic effect on selected bands of CL spectra and it is applied here to both β-silicon nitride (Si3N4) and β-silicon carbide (SiC) ceramics. CL spectra in both materials arise from their peculiar optically active defects. Experimental assessments of microstress fields may open a completely new perspective in the development of high-performance Si-based ceramics because one can directly visualize how residual stresses distribute within the material micro/nanostructure and miniaturized devices.

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Vinnikov, N. A., A. V. Dolbin, and M. V. Khlistyuck. "Hydrogen sorption by nanostructures at low temperatures (Review article)." Low Temperature Physics 49, no. 5 (May 1, 2023): 507. http://dx.doi.org/10.1063/10.0017811.

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The features of hydrogen sorption by a wide range of nanostructures — fullerite C60, carbon nanotubes, graphene structures, nanodispersed carbon, including Pd-containing nanoclusters, ordered silicon-oxide-based nanostructures (the MCM-41 family) and silicon-oxide aerogel — have been reviewed. Special attention is given to the sorption characteristics of carbon nanostructures that have been exposed to various modifying treatments (oxidation, gamma-ray irradiation in gas atmosphere, action of pulsed high frequency gas discharge). Two mechanisms of physical low-temperature sorption of hydrogen have been revealed to predominate in such nanostructures in different temperature intervals. At the lowest temperatures (8–12 K), the sorption can actually proceed without thermal activation: it is realized through the tunnel motion of hydrogen molecules along the nanostructure surfaces. The periodic structure of the potential relief, allowed by the surface frame of carbon and silicon-oxide nanostructures, along the rather low interpit barriers are beneficial for the formation of low-dimensional (including quantum) hydrogen-molecule systems practically without thermally activated diffusion. In such nanostructures, the hydrogen diffusion coefficients are actually independent of temperature at 8–12 K. At higher temperatures (12–295 K), a thermally activated mechanism of hydrogen diffusion prevails. The periodic structure of fullerite C60 contains periodic interstitial cavities, separated by rather low potential barriers. Their sizes are sufficient to accommodate impurity hydrogen molecules and, thus, allow diffusion processes, which can also have a tunnel nature. It is shown that gamma-irradiation and high-frequency gas discharge processing increase markedly the quantity of hydrogen strongly bonded to carbon nanostructures.

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Katsumi, Ryota, Takeshi Hizawa, Akihiro Kuwahata, Shun Naruse, Yuji Hatano, Takayuki Iwasaki, Mutsuko Hatano, et al. "Transfer-printing-based integration of silicon nitride grating structure on single-crystal diamond toward sensitive magnetometers." Applied Physics Letters 121, no. 16 (October 17, 2022): 161103. http://dx.doi.org/10.1063/5.0107854.

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Negatively charged nitrogen-vacancy (NV) centers in diamond have emerged as promising candidates for a wide range of quantum applications, especially quantum sensing of magnetic field. Implementation of nanostructure into diamond is powerful for efficient photon collection of NV centers and chip-scale miniaturization of the device, which is crucial for sensitive and practical diamond magnetometers. However, fabrication of the diamond nanostructure involves technical limitations and can degrade the spin coherence of the NV centers. In this study, we demonstrate the hybrid integration of a silicon nitride grating structure on a single-crystal diamond by utilizing transfer printing. This approach allows the implementation of the nanostructure in diamond using a simple pick-and-place assembly, facilitating diamond-based quantum applications without any complicated diamond nanofabrication. We observed the intensity enhancement in the collected NV emissions both theoretically and experimentally using the integrated grating structure. By applying the increased photon intensity, we demonstrate the improved magnetic sensitivity of the fabricated device. The proposed hybrid integration approach will offer a promising route toward a compact and sensitive diamond NV-based magnetometer.

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Yi, Ran, Sujong Chae, Yaobin Xu, Hyung-Seok Lim, Dusan Velickovic, Xiaolin Li, Qiuyan Li, Chongmin Wang, and Ji-Guang Zhang. "Scalable Synthesis of High Performance Silicon Anode by Impregnation of Pitch in Nanoporous Silicon." ECS Meeting Abstracts MA2022-02, no. 6 (October 9, 2022): 629. http://dx.doi.org/10.1149/ma2022-026629mtgabs.

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Silicon (Si) has been regarded as one of the most promising anode materials for the next generation LIBs with high energy density because it has 10 times higher theoretical specific capacity (4200 mAh/g) than that of graphite. However, severe volume change (~300%) of Si during lithiation and delithiation hinders the practical application of Si anode by 1) particle fracture and pulverization, 2) disintegration of electrode, and 3) continuous electrolyte-decomposition at the newly exposed Si surface. A novel process has been developed for the preparation of porous Si/C composite-based anode which demonstrate highly stable cycling stability. The enabling factor is a wet chemical, low temperature pitch coating process that uses readily available, low-cost, and abundant precursors. The porous Si nanostructure can be preserved by impregnating petroleum pitch before high-temperature treatment. A full cell with 80 wt% pitch-derived carbon/nanoporous Si in the anode has been demonstrated with 80% capacity retention after 450 cycles. Low swelling in both particle and electrode levels has also been observed. It is expected that the unique process developed in this work is also applicable for the development of other alloying-type anodes that require preservation of the desired nanostructures during high temperature treatment.

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Tang, Yu, Qian Luo, Yuxing Chen, and Kaikai Xu. "All-Silicon Photoelectric Biosensor on Chip Based on Silicon Nitride Waveguide with Low Loss." Nanomaterials 13, no. 5 (March 1, 2023): 914. http://dx.doi.org/10.3390/nano13050914.

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Compared to the widely used compound semiconductor photoelectric sensors, all-silicon photoelectric sensors have the advantage of easy mass production because they are compatible with the complementary metal-oxide-semiconductor (CMOS) fabrication technique. In this paper, we propose an all-silicon photoelectric biosensor with a simple process and that is integrated, miniature, and with low loss. This biosensor is based on monolithic integration technology, and its light source is a PN junction cascaded polysilicon nanostructure. The detection device utilizes a simple refractive index sensing method. According to our simulation, when the refractive index of the detected material is more than 1.52, evanescent wave intensity decreases with the growth of the refractive index. Thus, refractive index sensing can be achieved. Moreover, it was also shown that, compared to a slab waveguide, the embedded waveguide designed in this paper has a lower loss. With these features, our all-silicon photoelectric biosensor (ASPB) demonstrates its potential in the application of handheld biosensors.

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Andrle, Anna, Philipp Hönicke, Grzegorz Gwalt, Philipp-Immanuel Schneider, Yves Kayser, Frank Siewert, and Victor Soltwisch. "Shape- and Element-Sensitive Reconstruction of Periodic Nanostructures with Grazing Incidence X-ray Fluorescence Analysis and Machine Learning." Nanomaterials 11, no. 7 (June 23, 2021): 1647. http://dx.doi.org/10.3390/nano11071647.

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The characterization of nanostructured surfaces with sensitivity in the sub-nm range is of high importance for the development of current and next-generation integrated electronic circuits. Modern transistor architectures for, e.g., FinFETs are realized by lithographic fabrication of complex, well-ordered nanostructures. Recently, a novel characterization technique based on X-ray fluorescence measurements in grazing incidence geometry was proposed for such applications. This technique uses the X-ray standing wave field, arising from an interference between incident and the reflected radiation, as a nanoscale sensor for the dimensional and compositional parameters of the nanostructure. The element sensitivity of the X-ray fluorescence technique allows for a reconstruction of the spatial element distribution using a finite element method. Due to a high computational time, intelligent optimization methods employing machine learning algorithms are essential for timely provision of results. Here, a sampling of the probability distributions by Bayesian optimization is not only fast, but it also provides an initial estimate of the parameter uncertainties and sensitivities. The high sensitivity of the method requires a precise knowledge of the material parameters in the modeling of the dimensional shape provided that some physical properties of the material are known or determined beforehand. The unknown optical constants were extracted from an unstructured but otherwise identical layer system by means of soft X-ray reflectometry. The spatial distribution profiles of the different elements contained in the grating structure were compared to scanning electron and atomic force microscopy and the influence of carbon surface contamination on the modeling results were discussed. This novel approach enables the element sensitive and destruction-free characterization of nanostructures made of silicon nitride and silicon oxide with sub-nm resolution.

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Beekman, Matt, Susan Kauzlarich, Luke Doherty, and George Nolas. "Zintl Phases as Reactive Precursors for Synthesis of Novel Silicon and Germanium-Based Materials." Materials 12, no. 7 (April 8, 2019): 1139. http://dx.doi.org/10.3390/ma12071139.

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Recent experimental and theoretical work has demonstrated significant potential to tune the properties of silicon and germanium by adjusting the mesostructure, nanostructure, and/or crystalline structure of these group 14 elements. Despite the promise to achieve enhanced functionality with these already technologically important elements, a significant challenge lies in the identification of effective synthetic approaches that can access metastable silicon and germanium-based extended solids with a particular crystal structure or specific nano/meso-structured features. In this context, the class of intermetallic compounds known as Zintl phases has provided a platform for discovery of novel silicon and germanium-based materials. This review highlights some of the ways in which silicon and germanium-based Zintl phases have been utilized as precursors in innovative approaches to synthesize new crystalline modifications, nanoparticles, nanosheets, and mesostructured and nanoporous extended solids with properties that can be very different from the ground states of the elements.

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Chen, Qianhuang, Tianyang Shao, and Yan Xing. "An Experiment-Based Profile Function for the Calculation of Damage Distribution in Bulk Silicon Induced by a Helium Focused Ion Beam Process." Sensors 20, no. 8 (April 17, 2020): 2306. http://dx.doi.org/10.3390/s20082306.

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The helium focused ion beam (He-FIB) is widely used in the field of nanostructure fabrication due to its high resolution. Complicated forms of processing damage induced by He-FIB can be observed in substrates, and these damages have a severe impact on nanostructure processing. This study experimentally investigated the influence of the beam energy and ion dose of He-FIB on processing damage. Based on the experimental results, a prediction function for the amorphous damage profile of the single-crystalline silicon substrate caused by incident He-FIB was proposed, and a method for calculating the amorphous damage profile by inputting ion dose and beam energy was established. Based on one set of the amorphous damage profiles, the function coefficients were determined using a genetic algorithm. Experiments on single-crystalline silicon scanned by He-FIB under different process parameters were carried out to validate the model. The proposed experiment-based model can accurately predict the amorphous damage profile induced by He-FIB under a wide range of different ion doses and beam energies.

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Cheng, Yongzhi, and Chaoyu Du. "Broadband plasmonic absorber based on all silicon nanostructure resonators in visible region." Optical Materials 98 (December 2019): 109441. http://dx.doi.org/10.1016/j.optmat.2019.109441.

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Latu-Romain, L., and M. Ollivier. "Silicon carbide based one-dimensional nanostructure growth: towards electronics and biology perspectives." Journal of Physics D: Applied Physics 47, no. 20 (May 2, 2014): 203001. http://dx.doi.org/10.1088/0022-3727/47/20/203001.

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Mills, Christopher A., Elena Martinez, Abdelhamid Errachid, Elisabeth Engel, Miriam Funes, Christian Moormann, Thorsten Wahlbrink, Gabriel Gomila, Josep Planell, and Josep Samitier. "Nanoembossed Polymer Substrates for Biomedical Surface Interaction Studies." Journal of Nanoscience and Nanotechnology 7, no. 12 (December 1, 2007): 4588–94. http://dx.doi.org/10.1166/jnn.2007.18110.

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Biomedical devices are moving towards the incorporation of nanostructures to investigate the interactions of biological species with such topological surfaces found in nature. Good optical transparency and sealing properties, low fabrication cost, fast design realization times, and bio-compatibility make polymers excellent candidates for the production of surfaces containing such nanometric structures. In this work, a method for the production of nanostructures in free-standing sheets of different thermoplastic polymers is presented, with a view to using these substrates in biomedical cell-surface applications where optical microscopy techniques are required. The process conditions for the production of these structures in poly(methyl methacrylate), poly(ethylene naphthalate), poly(lactic acid), poly(styrene), and poly(ethyl ether ketone) are given. The fabrication method used is based on a modified nanoimprint lithography (NIL) technique using silicon based moulds, fabricated via reactive ion etching or focused ion beam lithography, to emboss nanostructures into the surface of the biologically compatible thermoplastic polymers. The method presented here is designed to faithfully replicate the nanostructures in the mould while maximising the mould lifetime. Examples of polymer replicas with nanostructures of different topographies are presented in poly(methyl methacrylate), including nanostructures for use in cell-surface interactions and nanostructure-containing microfluidic devices.

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Wang, Wen Liang, and Xiao Hong Rong. "Nanostructure Multilayers as Broadband Antireflection Coating Used at Terahertz Frequencies Region." Applied Mechanics and Materials 110-116 (October 2011): 3777–80. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.3777.

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Over the past decades, there have been significant advances in techniques to generate and detect terahertz (THZ) signals, but there have been comparatively few reports of structures that manipulate and control them. In this paper, based on the characteristic matrix method, hydrogenated amorphous silicon (a-Si [H]) and silicon oxide (SiO2) were chosen as coating materials, a nanostructure multiplayers as broadband antireflection coating used at terahertz frequencies region was designed. Which has a residual reflectivity of less than 0.07 and average reflectivity about 0.05 throughout the 50–140 cm-1 region?

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Wang, Shanshan, Huan Liu, and Jun Han. "Comprehensive Study of Au Nano-Mesh as a Catalyst in the Fabrication of Silicon Nanowires Arrays by Metal-Assisted Chemical Etching." Coatings 9, no. 2 (February 25, 2019): 149. http://dx.doi.org/10.3390/coatings9020149.

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Silicon nanowires (SiNWs) arrays have become one of low-dimensional structural nanomaterials for the preparation of high-performance optoelectronic devices with the advantages of highly efficient light trapping effect, carrier multiplication, and adjustable optical bandgap. The controlled growth of SiNWs determines their electrical and optical properties. The morphology of silicon nanowires fabricated by conventional metal-assisted chemical etching (MACE) involving the Ag-based etching process cannot be precisely controlled. Ultra-thin anodic aluminum oxide (AAO) is one of the new-pattern nanostructure assembly systems for the synthesis of nanomaterials. The synthesized nanostructure arrays can be tuned to exhibit different optical and electrical properties in a certain wavelength range by adjusting the AAO membrane parameters. In this paper, we demonstrate an ultra-thin Au nano-meshes array from a single hexagonal AAO membrane as a replication master instead of conventional Ag particles as etching catalyst. The extended ordered silicon nanowires arrays are fabricated by the selective chemical dissolution of nanoscale noble metal meshes that exhibit excellent anti-reflection performance in broadband wavelengths and a wide incidence angle.

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Yakimchuk, Dzmitry V., Victoria D. Bundyukova, Jon Ustarroz, Herman Terryn, Kitty Baert, Artem L. Kozlovskiy, Maxim V. Zdorovets, et al. "Morphology and Microstructure Evolution of Gold Nanostructures in the Limited Volume Porous Matrices." Sensors 20, no. 16 (August 6, 2020): 4397. http://dx.doi.org/10.3390/s20164397.

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The modern development of nanotechnology requires the discovery of simple approaches that ensure the controlled formation of functional nanostructures with a predetermined morphology. One of the simplest approaches is the self-assembly of nanostructures. The widespread implementation of self-assembly is limited by the complexity of controlled processes in a large volume where, due to the temperature, ion concentration, and other thermodynamics factors, local changes in diffusion-limited processes may occur, leading to unexpected nanostructure growth. The easiest ways to control the diffusion-limited processes are spatial limitation and localized growth of nanostructures in a porous matrix. In this paper, we propose to apply the method of controlled self-assembly of gold nanostructures in a limited pore volume of a silicon oxide matrix with submicron pore sizes. A detailed study of achieved gold nanostructures’ morphology, microstructure, and surface composition at different formation stages is carried out to understand the peculiarities of realized nanostructures. Based on the obtained results, a mechanism for the growth of gold nanostructures in a limited volume, which can be used for the controlled formation of nanostructures with a predetermined geometry and composition, has been proposed. The results observed in the present study can be useful for the design of plasmonic-active surfaces for surface-enhanced Raman spectroscopy-based detection of ultra-low concentration of different chemical or biological analytes, where the size of the localized gold nanostructures is comparable with the spot area of the focused laser beam.

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Han, Xiang-Lei, Guilhem Larrieu, and Christophe Krzeminski. "Modelling and engineering of stress based controlled oxidation effects for silicon nanostructure patterning." Nanotechnology 24, no. 49 (November 14, 2013): 495301. http://dx.doi.org/10.1088/0957-4484/24/49/495301.

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Amedome Min-Dianey, Kossi Aniya, Hao-Chun Zhang, Ali Anwar Brohi, Haiyan Yu, and Xinlin Xia. "Optical spectra of composite silver-porous silicon (Ag-pSi) nanostructure based periodical lattice." Superlattices and Microstructures 115 (March 2018): 168–76. http://dx.doi.org/10.1016/j.spmi.2018.01.028.

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Ray, M., S. Ganguly, M. Das, S. M. Hossain, and N. R. Bandyopadhyay. "Genetic algorithm based search of parameters for fabrication of uniform porous silicon nanostructure." Computational Materials Science 45, no. 1 (March 2009): 60–64. http://dx.doi.org/10.1016/j.commatsci.2008.03.052.

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Kim, Kihyun, Chanoh Park, M. Meyyappan, and Jeong-Soo Lee. "Silicon-Based BioFETs with 3-D Nanostructure: Easy integration, precise control of nanostructure, and a low device-to-device variation." IEEE Nanotechnology Magazine 10, no. 3 (September 2016): 21–29. http://dx.doi.org/10.1109/mnano.2016.2573478.

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SEKAK, K. A., S. ABDULLAH, S. PAIMAN, and W. M. YUNUS. "PHOTOLUMINESCENCE AND PHOTOACOUSTIC EFFECT OF ERBIUM-DOPED POROUS SILICON NANOSTRUCTURE." International Journal of Nanoscience 05, no. 04n05 (August 2006): 599–604. http://dx.doi.org/10.1142/s0219581x06004851.

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We applied photoluminescence (PL) and photoacoustic techniques on erbium-doped porous silicon nanostructured ( Er -doped-PSN) to study the influences of weight percent (%) of erbium-doped in PSN. Erbium-doped PSN has been intensively studied due their potentiality for optical devices such as waveguide and optical amplifier. Electrochemical technique was used to prepare the PSN samples. Polished p-type [100] c- Si was used as based material. Erbium doping process was carried out by electrodeposition technique using Erbium Chloride ( ErCl 3) and ethanol composition as electrolyte. The weight percent of Er concentration is varied to get the optimum effect on PL. The doping process improves PL intensity and changing in peak position. Photoluminescence measurements were performed in the visible light range and excited with the 380 nm line a Xenon ( Xe ) light source. Photoacoustic (PA) measurements is useful to obtain the optical absorption characteristic for strongly scattering media such as PSN and it helps to confirm the possibility of a strong quantum confinement effect.

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Journal articles on the topic 'Silicon Based Nanostructure'

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