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Journal articles on the topic 'Silicon barrier detectors'

Author: Grafiati

Published: 9 March 2023

Last updated: 10 March 2023

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1

Chaudhuri, S. K., P. V. Rajesh, S. S. Ghugre, and D. Das. "Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors." Defect and Diffusion Forum 245-246 (October 2005): 23–28. http://dx.doi.org/10.4028/www.scientific.net/ddf.245-246.23.

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Silicon surface barrier (SSB) detectors have been fabricated with oxygen enriched, high-resistivity, detector grade, n-type FZ silicon. Oxygen enrichment of the wafer was done by high-energy (140 MeV) oxygen ion implantation. Annealing of the irradiated silicon wafer was done to minimize the irradiation-induced defect concentration. Positron annihilation lifetime studies were used to select the annealing temperature. A comparative study was carried out among various SSB detectors made from as-grown, as-irradiated and annealed silicon wafers. Detector made from the annealed wafer worked satisfactorily and its performance was comparable with that of a detector made from as-grown crystal.

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2

Bruce, D. M., R. J. Seymour, D. Cheong, P. E. Jessop, and B. K. Garside. "Ultrafast interdigital photodetectors and integration with optical waveguides on silicon." Canadian Journal of Physics 65, no. 8 (August 1, 1987): 924–28. http://dx.doi.org/10.1139/p87-145.

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The development of new types of high-speed photodetectors and techniques to incorporate these detectors into integrated optical structures are reported in this paper. Schottky-barrier detectors with an interdigital electrode configuration have been fabricated on commercially available silicon-on-sapphire substrates. Response times of <30 ps have been measured for wavelengths from infrared to the ultraviolet. These experimental results agree well with a supporting numerical model of these detectors. Using the same electrode configuration, we have fabricated photoconductive detectors on bulk silicon and germanium-on-gallium arsenide substrates. These have slower response times, on the order of a nanosecond, but demonstrate a good responsivity of approximately 1.5 A∙W−1. Using a modified electrode configuration, we have fabricated an integrated detector array on silicon, combining a glass waveguide channel with each detector element for the efficient delivery of an optical input signal.

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3

Bakhlanov, S. V., A. V. Derbin, I. S. Drachnev, O. I. Konkov, I. M. Kotina, A. M. Kuzmichev, I. S. Lomskaya, et al. "Degradation of silicon detectors under long-term irradiation by ²⁵²Cf fission products." Journal of Physics: Conference Series 2103, no. 1 (November 1, 2021): 012138. http://dx.doi.org/10.1088/1742-6596/2103/1/012138.

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Abstract The response function of the recoil nuclei in detectors designed for detection of neutrinos or dark matter particles can be determined only through usage of a neutron source with a known energy spectrum. A possible solution for a compact neutron calibration source is a combination of a 252Cf neutron source and a semiconductor detector that detects fission fragments, and thus records the neutron emission moment. This work is devoted to the degradation study of the operating parameters for silicon semiconductor detectors irradiated by fission fragments of the nuclide of 252 Cf. Two types of Si detectors were under investigations - silicon-lithium Si(Li) p-i-n detectors and silicon surface barrier detectors. As a result of the measurements, the maximum permissible radiation doses for the correct operation of both types of detectors and the relation of the received radiation dose to the spectroscopic characteristics of the detectors were determined.

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4

Radulović, Vladimir, Klemen Ambrožič, Ivana Capan, Robert Bernat, Zoran Ereš, Željko Pastuović, Adam Sarbutt, et al. "SILICON CARBIDE NEUTRON DETECTOR PROTOTYPE TESTING AT THE JSI TRIGA REACTOR FOR ENHANCED BORDER AND PORTS SECURITY." EPJ Web of Conferences 247 (2021): 16002. http://dx.doi.org/10.1051/epjconf/202124716002.

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In 2016, the “E-SiCure” project (standing for “Engineering Silicon Carbide for Border and Port Security”), funded by the NATO Science for Peace and Security Programme was launched. The main objective is to combine theoretical, experimental and applied research towards the development of radiation-hard SiC-based detectors of special nuclear materials (SNM), with the end goal to enhance border and port security barriers. Prototype neutron detectors, configured as 4H-SiC-based Schottky barrier diodes, were developed for the detection of secondary charged particles (tritons, alphas and lithium atoms) which are the result of thermal neutron reactions on 10B and 6LiF layers above the surface of the 4H-SiC diodes. We designed a stand-alone prototype detection system, consisting of a preamplifier, shaping amplifier and a multichannel analyser operated by a laptop computer, for testing of neutron detector prototypes at the Jožef Stefan Institute (JSI) TRIGA reactor using a broad beam of reactor neutrons. The reverse bias for the detector diode and the power to electronic system were provided by a standalone battery-powered voltage source. The detector functionality was established through measurements using an 241Am alpha particle source. Two dedicated experimental campaigns were performed at the JSI TRIGA reactor. The registered pulse height spectra from the detectors, using both 10B and 6LiF neutron converting layers, clearly demonstrated the neutron detection abilities of the SiC detector prototypes. The computed neutron detection sensitivity of the single prototype detectors demonstrates that scaling SiC detectors into larger arrays, of dimensions relevant for border and port radiation detectors, could enable neutron sensitivity levels matching gas-based detector technology.

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5

Bakhlanov, S. V., N. V. Bazlov, I. D. Chernobrovkin, A. V. Derbin, I. S. Drachnev, I. M. Kotina, O. I. Konkov, et al. "Influence of α-particles irradiation on the properties and performance of silicon semiconductor detectors." Journal of Physics: Conference Series 2103, no. 1 (November 1, 2021): 012139. http://dx.doi.org/10.1088/1742-6596/2103/1/012139.

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Abstract Deterioration of the operation parameters of p-type Si surface-barrier detector and Si(Li) p-i-n detector upon irradiation by alpha-particles was investigated. The detectors were irradiated at room temperature up to a total number of the registered α-particles Nα equal to 6 × 109. Prolonged irradiation has resulted in a deterioration of the detectors energy resolution ability and it was found that the increase of α-peaks broadening can be described by a linear function of Nα with a slope Δσ/ΔNα ∼ (1.4–1.8) × 10–9 keV/α for both detectors. Resolution deterioration was associated with the increase of the detectors leakage current, which proceeds linearly with the number of absorbed α-particles with the slope ΔI/ΔNα ∼ (7-17) × 10-17 A/α. The increase of the detectors reverse current was related with appearance of radiation-induced defect level at 0.56 eV above the valence band.

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6

Apollinari, G., S. Belforte, E. Focardi, R. Paoletti, G. Tonelli, and F. Zetti. "Two dimensional tracking with surface barrier silicon detectors." IEEE Transactions on Nuclear Science 36, no. 1 (1989): 46–53. http://dx.doi.org/10.1109/23.34399.

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7

Stojanovic, M., P. Osmokrovic, F. Boreli, D. Novković, and R. Webb. "Characteristics of large area silicon surface barrier detectors." Thin Solid Films 296, no. 1-2 (March 1997): 181–83. http://dx.doi.org/10.1016/s0040-6090(96)09334-0.

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8

Vojtek, J., J. šikula, and R. Tykva. "Excess noise of the silicon surface barrier detectors." Czechoslovak Journal of Physics 40, no. 11 (November 1990): 1289–92. http://dx.doi.org/10.1007/bf01605058.

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9

Sharma, R. P. "Development of high resolution silicon surface barrier detectors." Pramana 31, no. 3 (September 1988): 185–95. http://dx.doi.org/10.1007/bf02848805.

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10

Ivanov, V. G., and G. V. Ivanov. "New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application." Advances in OptoElectronics 2011 (August 24, 2011): 1–6. http://dx.doi.org/10.1155/2011/459130.

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The results of an experimental investigation into a new type of VLWIR detector based on hot electron gas emission and architecture of the detector are presented and discussed. The detectors (further referred to as HEGED) take advantage of the thermionic emission current change effect in a semiconductor diode with a Schottky barrier (SB) as a result of the direct transfer of the absorbed radiation energy to the system of electronic gas in the quasimetallic layer of the barrier. The possibility of detecting radiation having the energy of quantums less than the height of the Schottky diode potential barrier and of obtaining a substantial improvement of a cutoff wavelength to VLWIR of the PtSi/Si detector has been demonstrated. The complementary contribution of two physical mechanisms of emanation detection—“quantum” and hot electrons gas emission—has allowed the creation of a superwideband IR detector using standard silicon technology.

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11

Kim, Y., C. Kim, S. Ohkawa, K. Husimi, T. Sakai, and Y. Ikeda. "Surface Barrier Silicon Detectors with a Large Active Area." IEEE Transactions on Nuclear Science 32, no. 1 (1985): 476–81. http://dx.doi.org/10.1109/tns.1985.4336877.

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12

Radulović, Vladimir, Klemen Ambrožič, Luka Snoj, Ivana Capan, Tomislav Brodar, Zoran Ereš, Željko Pastuović, et al. "E-SiCure Collaboration Project: Silicon Carbide Material Studies and Detector Prototype Testing at the JSI TRIGA Reactor." EPJ Web of Conferences 225 (2020): 07007. http://dx.doi.org/10.1051/epjconf/202022507007.

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In 2016, the ”E-SiCure” project (standing for Engineering Silicon Carbide for Border and Port Security), funded by the NATO Science for Peace and Security Programme, was launched. The main objective is to combine theoretical, experimental and applied research towards the development of radiation-hard SiC-based detectors of special nuclear materials (SNM), and by that way, to enhance border and port security barriers. Along the plan, material modification processes are employed firstly to study, and secondly to manipulate the most severe electrically active defects (which trap or annihilate free charge carriers), by specific ion implantation and defect engineering. This paper gives an overview of the experimental activities performed at the JSI TRIGA reactor in the framework of the E-SiCure project. Initial activities were aimed at obtaining information on the radiation hardness of SiC and at the study of the energy levels of the defects induced by neutron irradiation. Several Schottky barrier diodes were fabricated out of nitrogen-doped epitaxial grown 4H-SiC, and irradiated under Cd filters in the PT irradiation channel in the JSI TRIGA reactor with varying neutron fluence levels. Neutron-induced defects in the material were studied using temperature dependent current-voltage (I-V), capacitance-voltage (C-V) and Deep-Level Transient Spectroscopy (DLTS) measurements. Our prototype neutron detectors are configured as 4H-SiC-based Schottky barrier diodes for detection of secondary charged particles (tritons, alphas and lithium atoms) which are result of thermal neutron conversion process in 10B and 6LiF layers above the surface of the 4H-SiC diodes. For field testing of neutron detectors using a broad beam of reactor neutrons we designed a standalone prototype detection system consisting of a preamplifier, shaping amplifier and a multichannel analyser operated by a laptop computer. The reverse bias for the detector diode and the power to electronic system are provided by a standalone battery-powered voltage source. The detector functionality was established through measurements using an 241Am alpha particle source. Two dedicated experimental campaigns were performed at the JSI TRIGA reactor. The registered pulse height spectra from the detectors, using both 10B and 6LiF neutron converting layers, clearly demonstrated the neutron detection abilities of the SiC detector prototypes.

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13

Msimanga, M., M. McPherson, and C. Theron. "Fabrication and characterisation of gold-doped silicon Schottky barrier detectors." Radiation Physics and Chemistry 71, no. 3-4 (October 2004): 733–34. http://dx.doi.org/10.1016/j.radphyschem.2004.04.082.

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14

Apollinari, G., S. Belforte, F. Bosi, E. Focardi, R. Paoletti, G. Tonelli, and F. Zetti. "Performance of surface barrier silicon detectors with x, y readout." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 279, no. 1-2 (July 1989): 396–401. http://dx.doi.org/10.1016/0168-9002(89)91112-1.

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15

Bruschi, Marco, Paolo Calonaci, Giacomo Poggi, and Nello Taccetti. "High count rate particle spectroscopy with silicon surface-barrier detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 267, no. 1 (April 1988): 171–76. http://dx.doi.org/10.1016/0168-9002(88)90644-4.

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16

Kim, Han Soo, Se Hwan Park, Jang Ho Ha, Seung Yeon Cho, and Yong Kyun Kim. "Characteristics of Silicon Surface Barrier Radiation Detectors for Alpha Particle Detection." Journal of the Korean Physical Society 52, no. 6 (June 14, 2008): 1754–58. http://dx.doi.org/10.3938/jkps.52.1754.

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17

Butsch, Rainer, Josef Pochodzalla, and Bernd Heck. "A direct observation of plasma delay in silicon surface barrier detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 228, no. 2-3 (January 1985): 586–88. http://dx.doi.org/10.1016/0168-9002(85)90311-0.

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18

Mandal, Krishna C., Sandeep K. Chaudhuri, and Frank H. Ruddy. "Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments." EPJ Web of Conferences 278 (2023): 01003. http://dx.doi.org/10.1051/epjconf/202327801003.

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Reactor dosimetry environments require radiation detectors that are capable of operating at high temperatures in extremely high neutron and gamma-ray dose rates. Silicon carbide (SiC) is one of the most promising wide bandgap semiconductors (3.27 eV) for harsh environment applications due to its radiation hardness, high breakdown voltage, high electron saturation velocity, and high thermal conductivity. In this paper, we summarize the prospect of Schottky barrier radiation detectors, fabricated on highly crystalline low-defect detector-grade n-type 4H-SiC epitaxial layers with thickness ranging from 20 to 250 lm, for harsh environment applications. A comprehensive discussion on the characterization of the parameters that influence the energy resolution has been included. The usage of electrical and radiation spectroscopic measurements for characterizing the junction and rectification properties, minority carrier diffusion lengths, and energy resolution has been elaborated. Characterization of crucial factors that limit the energy resolution of the detectors such as charge trap centers using thermally stimulated transient techniques is summarized. Finally, the effect of neutron fluence on the performance of the 4H-SiC detectors is discussed.

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19

Gaubas, E., T. Ceponis, V. Kalendra, J. Kusakovskij, and A. Uleckas. "Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes." ISRN Materials Science 2012 (January 30, 2012): 1–16. http://dx.doi.org/10.5402/2012/543790.

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Technique for barrier evaluation by measurements of current transients induced by linearly increasing voltage pulse based on analysis of barrier and diffusion capacitance changes is presented. The components of the barrier capacitance charging and generation/recombination currents are discussed. Different situations of the impact of deep center defects on barrier and diffusion capacitance changes are analyzed. Basics of the profiling of layered junction structures using the presented technique are discussed. Instrumentation for implementation of this technique and for investigations of the steady-state bias infra-red illumination and temperature dependent variations of the barrier capacitance charging and generation/recombination currents are described. Applications of this technique for the analysis of barrier quality in solar cells and particle detectors fabricated on silicon material are demonstrated.

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20

Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.

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This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.

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21

Udaykumar, Khadke, B. R. Kerur, S. M. Hangodimath, M. T. Lagare, S. K. Srivastava, S. V. S. Nageshwar Rao, A. Mandal, and D. K. Avasthi. "The effect of temperature on the behavior of semiconductor silicon surface barrier detectors." Radiation Measurements 36, no. 1-6 (June 2003): 625–28. http://dx.doi.org/10.1016/s1350-4487(03)00213-0.

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22

England, J. B. A., G. M. Field, and T. R. Ophel. "Z-identification of charged particles by signal risetime in silicon surface barrier detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 280, no. 2-3 (August 1989): 291–98. http://dx.doi.org/10.1016/0168-9002(89)90920-0.

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23

Iturbe, J. L., and E. Ordoñez-Regil. "Construction and performance of a cooling coil system for silicon surface barrier detectors." Journal of Radioanalytical and Nuclear Chemistry Letters 128, no. 4 (November 1988): 331–35. http://dx.doi.org/10.1007/bf02166957.

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24

Karadavut, OmerFaruk, Sandeep K. Chaudhuri, Joshua W. Kleppinger, Ritwik Nag, and Krishna C. Mandal. "Enhancement of radiation detection performance with reduction of EH_6/7 deep levels in n-type 4H–SiC through thermal oxidation." Applied Physics Letters 121, no. 1 (July 4, 2022): 012103. http://dx.doi.org/10.1063/5.0089236.

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We report the effect of EH6/7 electron trap centers alone on the performance of high-resolution radiation detectors fabricated on n-type 4H–SiC epitaxial layers. A Schottky barrier detector (SBD) and a metal-oxide-semiconductor (MOS) capacitor detector fabricated using two sister samples derived from the same 50 μm 4H–SiC parent wafer exhibited widely different energy resolutions of 0.4% and 0.9% for 5486 keV alpha particles. An equivalent noise charge model analysis ruled out the effect of the detector capacitance and the leakage current on the resolution of the detectors. Deep level transient spectroscopic studies revealed the presence of two trapping centers in each detector within the temperature scan range 240–800 K. The Z1/2 center, a potential electron trap, was detected in both the detectors in equal concentration, which suggested that the observed difference in the energy resolution is due to the presence of the other defect, the EH6/7 center, in the SBD. The capture cross section of the EH6/7 center was calculated to be three orders of magnitude higher than the second defect [a carbon antisite vacancy (CAV) center] observed in the MOS detector with an activation energy of 1.10 eV, which accounted for the enhanced electronic trapping in the SBD leading to its poor energy resolution. It has been proposed that the EH6/7 centers in the SBD have likely been reconfigured to CAV pairs during the thermal growth of the silicon dioxide layer in the MOS detector. The proposed formation mechanism of CAV, a stable qubit state for quantum information processing, addresses the outstanding questions related to the role of defect dynamics in their formation.

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25

Sciuto, Antonella, Lorenzo Torrisi, Antonino Cannavò, Massimo Mazzillo, and Lucia Calcagno. "Effects induced by high and low intensity laser plasma on SiC Schottky detectors." EPJ Web of Conferences 167 (2018): 03005. http://dx.doi.org/10.1051/epjconf/201816703005.

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Silicon-Carbide detectors are extensively employed as diagnostic devices in laser-generated plasma, allowing the simultaneous detection of photons, electrons and ions, when used in time-of-flight configuration. The plasma generated by high intensity laser (1016 W/cm2) producing high energy ions was characterized by SiC detector with a continuous front-electrode, and a very thick active depth, while SiC detector with an Interdigit front-electrode was used to measure the low energy ions of plasma generated by low intensity laser (1010 W/cm2). Information about ion energy, number of charge states, plasma temperature can be accurately obtained. However, laser exposure induces the formation of surface and bulk defects whose concentration increases with increasing the time to plasma exposure. The surface defects consist of clusters with a main size of the order of some microns and they modify the diode barrier height and the efficiency of the detector as checked by alpha spectrometry. The bulk defects, due to the energy loss of detected ions, strongly affect the electrical properties of the device, inducing a relevant increase of the leakage (reverse) current and decrease the forward current related to a deactivation of the dopant in the active detector region.

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26

Rogalski, Antoni, Piotr Martyniuk, Malgorzata Kopytko, Pawel Madejczyk, and Sanjay Krishna. "InAsSb-Based Infrared Photodetectors: Thirty Years Later On." Sensors 20, no. 24 (December 9, 2020): 7047. http://dx.doi.org/10.3390/s20247047.

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In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

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27

Cho, T., E. Takahashi, M. Hirata, N. Yamaguchi, T. Teraji, K. Matsuda, A. Takeuchi, et al. "Evidence against existing x-ray-energy response theories for silicon-surface-barrier semiconductor detectors." Physical Review A 46, no. 6 (September 1, 1992): R3024—R3027. http://dx.doi.org/10.1103/physreva.46.r3024.

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28

Rahab, H., A. Keffous, H. Menari, W. Chergui, N. Boussaa, and M. Siad. "Surface barrier detectors using aluminum on n- and p-type silicon for α-spectroscopy." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 459, no. 1-2 (February 2001): 200–205. http://dx.doi.org/10.1016/s0168-9002(00)00991-8.

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29

Cliche, L., S. C. Gujrathi, and L. A. Hamel. "Pulse height defects for 16O, 35Cl and 81Br ions in silicon surface barrier detectors." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 45, no. 1-4 (January 1990): 270–74. http://dx.doi.org/10.1016/0168-583x(90)90833-g.

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30

Xiao, X. "Modeling of parasitic barrier effects in silicide/Si1−xGex Schottky-barrier infrared detectors fabricated with a silicon sacrificial layer." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 3 (May 1993): 1168. http://dx.doi.org/10.1116/1.586833.

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31

Pavlov, Jevgenij, Tomas Ceponis, Kornelijus Pukas, Leonid Makarenko, and Eugenijus Gaubas. "5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1−xGex Alloys." Materials 15, no. 5 (March 2, 2022): 1861. http://dx.doi.org/10.3390/ma15051861.

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Minority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC) at CERN. It is anticipated that the sensors of the upgraded strip tracker will be based on the p-type silicon doped with boron. In this work, minority carrier traps in p-type silicon (Si) and silicon–germanium (Si1−xGex) alloys induced by 5.5 MeV electron irradiation were investigated by combining various modes of deep-level transient spectroscopy (DLTS) and pulsed technique of barrier evaluation using linearly increasing voltage (BELIV). These investigations were addressed to reveal the dominant radiation defects, the dopant activity transforms under local strain, as well as reactions with interstitial impurities and mechanisms of acceptor removal in p-type silicon (Si) and silicon–germanium (SiGe) alloys, in order to ground technological ways for radiation hardening of the advanced particle detectors. The prevailing defects of interstitial boron–oxygen (BiOi) and the vacancy–oxygen (VO) complexes, as well as the vacancy clusters, were identified using the values of activation energy reported in the literature. The activation energy shift of the radiation-induced traps with content of Ge was clarified in all the examined types of Si1−xGex (with x= 0–0.05) materials.

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32

Ishizuka, Y., C. Kim, Y. Kim, S. Ohkawa, K. Husimi, S. Osada, and M. Ishii. "Surface Barrier Silicon Radiation Detectors Improved by Using a Tungsten Oxide for the Surface Stability." IEEE Transactions on Nuclear Science 33, no. 1 (1986): 326–31. http://dx.doi.org/10.1109/tns.1986.4337111.

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33

Kushniruk, V. F., and Yu S. Tsyganov. "A note on collected-charge fluctuations in silicon surface-barrier detectors at heavy ion registration." Applied Radiation and Isotopes 48, no. 5 (May 1997): 691–93. http://dx.doi.org/10.1016/s0969-8043(96)00322-3.

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34

Dabrowski, Władysław, and Kazimierz Korbel. "The influence of fast neutron irradiation on the noise performance of silicon surface-barrier detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 271, no. 3 (September 1988): 585–87. http://dx.doi.org/10.1016/0168-9002(88)90325-7.

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35

Ray, A., Tomi Nath Das, C. A. Betty, and T. V. Chandrasekhar Rao. "Development of surface barrier detectors of low leakage current employing argon cold plasma assisted silicon surface cleaning prior to detector fabrication." Journal of Instrumentation 13, no. 09 (September 20, 2018): P09019. http://dx.doi.org/10.1088/1748-0221/13/09/p09019.

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36

Iturbe, J. T. "Alpha-particle spectrum of 219Rn and its daughters from pitchblende samples using silicon surface-barrier detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 274, no. 1-2 (January 1989): 404–5. http://dx.doi.org/10.1016/0168-9002(89)90408-7.

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37

Chiles, M. M. "Dual silicon surface-barrier detectors and associated electronics for monitoring chemical separation of 249Cf and 249Bk." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 299, no. 1-3 (December 1990): 597–99. http://dx.doi.org/10.1016/0168-9002(90)90852-w.

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38

ROGALSKI, A. "QUANTUM WELL INFRARED PHOTOCONDUCTORS IN INFRARED DETECTORS TECHNOLOGY." International Journal of High Speed Electronics and Systems 12, no. 03 (September 2002): 593–658. http://dx.doi.org/10.1142/s0129156402001654.

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Investigations of the performance of quantum well infrared photodetectors (QWIPs) as compared to other types of semiconductor infrared (IR) detectors are presented. In comparative studies both photon and thermal detectors are considered. More attention is paid to photon detectors and between them we can distinguish: HgCdTe photodiodes, InSb photodiodes, Schottky barrier photoemissive detectors, and doped silicon detectors. Special attention has been paid to competitive technologies in long wavelength IR (LWIR) and very LWIR (VLWIR) spectral ranges with emphasis on the material properties, device structure, and their impact on FPA performance. The potential performance of different materials as infrared detectors is examined utilizing the α/G ratio, where α is the absorption coefficient and G is the thermal generation. From the discussion results, LWIR QWIP cannot compete with HgCdTe photodiode as the single device especially at higher temperature operation(> 70 K) due to fundamental limitations associated with intersubband transitions. However, the advantage of HgCdTe is less distinct in the temperature range below 50 K due to problems involved in the HgCdTe material (p-type doping, Shockley–Read recombination, trap-assisted tunneling, surface and interface instabilities). Even though the QWIP is a photoconductor, several its properties such as high impedance, fast response time, long integration time, and low power consumption, well comply with requirements for large FPAs fabrication. Due to the high material quality at low temperature, QWIP has potential advantages over HgCdTe for VLWIR FPA applications in terms of the array size, uniformity, yield and cost of the systems. Both HgCdTe photodiodes and quantum well infrared photodetectors offer multicolor capability in the MWIR and LWIR range. Powerful possibilities of QWIP technology are connected with VLWIR FPA applications and with multicolor detection. QWIP FPAs combine the advantages of PtSi Schottky barrier arrays (high uniformity, high yield, radiation hardness, large arrays, lower cost) with the advantages of HgCdTe (high quantum efficiency and long wavelength response).

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ABBONDANNO, U., F. DEMANINS, G. VANNINI, P. BOCCACCIO, L. VANNUCCI, R. A. RICCI, M. BRUNO, M. D’AGOSTINO, P. M. MILAZZO, and N. CINDRO. "ELASTIC SCATTERING OF 58Ni ON 46Ti AT ENERGIES NEAR THE COULOMB BARRIER: SEARCH FOR RESONANT STATES." International Journal of Modern Physics E 03, no. 03 (September 1994): 919–32. http://dx.doi.org/10.1142/s0218301394000279.

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In a search for possible resonant behavior in medium and heavy composite systems, the 46Ti(58Ni, 58Ni)46Ti elastic scattering was studied in the 58 Ni incident energy range from 216.2 to 240 MeV. A kinematic coincidence technique employing position sensitive silicon detectors was used to obtain the mass identification of the binary events. Evidence was found for two structures of non-statistical nature in the elastic excitation function at, respectively, incident 58 Ni energies of 223.9 and 227.4 MeV (Ecm=99.0 and 100.6 MeV). A statistical analysis of the corresponding angular distributions disclosed periodical behavior analogous to that caused by single partial waves of J=(36 ± 1) and (47 ± 1), respectively.

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ENGLAND, J. "Comparison of signal rise-times in totally depleted P-type and N-type silicon surface barrier detectors." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 364, no. 3 (October 1995): 537–51. http://dx.doi.org/10.1016/s0168-583x(95)90377-a.

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Lee, C., and N. R. Fletcher. "Parameterization of the pulse height defect and resolution for low-Z ions incident on silicon barrier detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 432, no. 2-3 (August 1999): 313–17. http://dx.doi.org/10.1016/s0168-9002(99)00230-2.

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42

England, J. B. A., M. A. Bentley, G. M. Field, and D. M. Thompson. "Comparison of signal rise-times in totally depleted P-type and N-type silicon surface barrier detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 364, no. 3 (October 1995): 537–51. http://dx.doi.org/10.1016/0168-9002(95)00447-5.

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43

Cho, T., M. Hirata, J. Kohagura, K. Yatsu, T. Tamano, S. Miyoshi, T. Kondoh, et al. "New findings of X-ray energy responses of silicon surface barrier detectors and their generalized theoretical extension to X-ray responses of position sensitive detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 348, no. 2-3 (September 1994): 475–78. http://dx.doi.org/10.1016/0168-9002(94)90783-8.

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Maragkos, F., K. Bosmpotinis, D. Cosic, S. Fazinić, V. Foteinou, M. Kokkoris, M. Krmpotić, et al. "Differential Cross-section Measurements for ³He Elastic Scattering on ¹⁶O and ²⁷Al." Journal of Physics: Conference Series 2326, no. 1 (October 1, 2022): 012011. http://dx.doi.org/10.1088/1742-6596/2326/1/012011.

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Abstract In the present work measurements to determine the differential cross section values for the elastic scattering of 3He on 16O and 27Al were carried out at the Ruđer Bošković Institute (RBI) Tandem Accelerator Facility in Zagreb, Croatia, covering the E3He,lab=3500-5600 keV energy range, using four Silicon Surface Barrier (SSB) detectors positioned at the backscattering angles of 130°, 145°, 157.7° and 165ο. The target was constructed at the facility and was comprised of a thin, self-supporting aluminum foil, upon which a thin layer of natB (isotopic ratio: 11B 80.1%, 10B 19.9%), along with 12C, 14N, 16O, was deposited using the sputtering technique. In addition, an ultra-thin layer of 197Au was evaporated on top for wear protection and normalization purposes.

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Wang, Bolong, Rui Jia, Xing Li, Ke Tao, Wei Luo, Longjie Wang, and Jiawang Chen. "Simulation of Silicon Surface Barrier Detector with PN Junction Guard Rings to Improve the Breakdown Voltage." Micromachines 13, no. 11 (October 23, 2022): 1811. http://dx.doi.org/10.3390/mi13111811.

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Silicon surface barrier detectors (SSBDs) are normally used to detect high−energy particles due to their excellent properties. For better charge collection efficiency (CCE), the SSBD device should be operated at higher reverse voltages, but this can lead to device breakdown. Therefore, we used a PN junction as a guard ring to increase the breakdown voltage of the SSBD. The structures of two SSBD devices are drawn and simulated in this work. Compared with a conventional SSBD (c−SSBD), the use of a PN junction as a guard ring for an SSBD (Hybrid−SSBD) achieves higher breakdown voltages, of over 1500 V under reverse bias. This means that Hybrid−SSBD devices can operate at higher reverse voltages for better charge collection efficiency (CCE) to detect high−energy particles. Then, we simulated the different structure parameters of the Hybrid−SSBD guard rings. Among them, the doping depth and gap width of the guard ring (between the innermost guard ring and the active area) have a greater impact on the breakdown voltage. Finally, for Hybrid−SSBD devices, the optimal characteristics of the guard ring were 1 × 1019 cm−3 doping concentration, 1 μm doping depth, and innermost guard ring width and gap width of 5 μm and 3 μm, respectively.

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Signorini, C., M. Mazzocco, P. Molini, D. Pierroutsakou, C. Boiano, C. Manea, E. Strano, et al. "Elastic scattering measurement for the system 17O + 58Ni at Coulomb barrier energies with silicon strip detectors exploiting ASIC electronics." Journal of Physics: Conference Series 420 (March 25, 2013): 012071. http://dx.doi.org/10.1088/1742-6596/420/1/012071.

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Bligoura, Natalia, Eleni Ntemou, Xenophon Aslanoglou, Michael Kokkoris, Anastasios Lagoyannis, Fotis Maragkos, Panagiotis Misaelides, Nikolaos Patronis, and Kostas Preketes-Sigalas. "Measurement of differential cross sections of deuteron elastic scattering on 31P for EBS purposes." HNPS Proceedings 27 (April 17, 2020): 131. http://dx.doi.org/10.12681/hnps.2999.

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The 31P(d,d0)31P elastic scattering differential cross-sections were measured, for the first time, in the energy range Ed,lab=900-2400 keV, using a variable energy step, for elastic backscattering spectrometry (EBS) purposes. The measurements were performed at the 5.5 MV TN11 HV Tandem Accelerator of the N.C.S.R. “Demokritos”, implementing a high precision goniometer. The experimental setup consisted of five silicon surface barrier (SSB) detectors, placed at the laboratory scattering angles between 130° and 170° (in steps of 10°). The target used was a thin GaP layer evaporated on a self-supporting carbon foil. To validate the obtained results, benchmarking measurements were performed, using a polished GaP crystal. The determined cross-section datasets are compared with the corresponding ones using Rutherford’s formula, and similarities and discrepancies will be discussed and analyzed.

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Yang, Guixia, Yuanlong Pang, Yuqing Yang, Jianyong Liu, Shuming Peng, Gang Chen, Ming Jiang, et al. "High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes." Nanomaterials 9, no. 2 (February 2, 2019): 194. http://dx.doi.org/10.3390/nano9020194.

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Silicon carbide (SiC) has been widely used for electronic radiation detectors and atomic battery sensors. However, the physical properties of SiC exposure to high-dose irradiation as well as its related electrical responses are not yet well understood. Meanwhile, the current research in this field are generally focused on electrical properties and defects formation, which are not suitable to explain the intrinsic response of irradiation effect since defect itself is not easy to characterize, and it is complex to determine whether it comes from the raw material or exists only upon irradiation. Therefore, a more straightforward quantification of irradiation effect is needed to establish the direct correlation between irradiation-induced current and the radiation fluence. This work reports the on-line electrical properties of 4H-SiC Schottky barrier diodes (SBDs) under high-dose electron irradiation and employs in situ noise diagnostic analysis to demonstrate the correlation of irradiation-induced defects and microscopic electronic properties. It is found that the electron beam has a strong radiation destructive effect on 4H-SiC SBDs. The on-line electron-induced current and noise information reveal a self-healing like procedure, in which the internal defects of the devices are likely to be annealed at room temperature and devices’ performance is restored to some extent.

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49

Tsakiris, Theofanis, Michael Kokkoris, Fotis Maragkos, Anastasia Ziagkova, Nikolaos Dimitrakopoulos, Matea Krmpotić, Donny Cosic, Georgios Provatas, and Anastasios Lagoyannis. "Study of the Elastic Scattering in the d + 11B system for EBS purposes." HNPS Advances in Nuclear Physics 28 (October 17, 2022): 234–37. http://dx.doi.org/10.12681/hnps.3709.

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The implementation of boron in several fields, such as in the creation of p-type semiconductors in electronics, has created the need for the accurate quantitative determination of its depth profile concentrations in near surface layers of various matrices. In the framework of IBA techniques a combination of Elastic Backscattering Spectroscopy, along with Nuclear Reaction Analysis, has been proposed in order to address the current needs for boron depth profiling, focusing on the use of proton beams. Deuteron beams however offer superior mass resolution with similar stopping power values and simultaneous excitation of most light elements. Unfortunately, the lack of experimental datasets concerning the deuteron elastic scattering on boron impedes their use. Thus, in the present work, the first set of measurements for the 11B(d,d0) differential cross section covering the Ed,lab=1300-1860 keV energy range for the backscattering angles of 150ο, 160ο and 170ο were carried out. The study was conducted at the 5.5 MV Tandem Accelerator of the Institute of Nuclear and Particle Physics, in the National Center of Scientific Research “Demokritos”, Athens, Greece. The target was a thin, self-supporting aluminum foil, upon which a thin natB (isotopic ratio: 11B 80.1%, 10B 19.9%) layer was deposited using the sputtering technique at RBI, Zagreb, Croatia, followed by the evaporation of an ultra-thin layer of 197Au on top for normalization and wear protection purposes. The outgoing particles were detected using silicon surface barrier (S.S.B.) detectors and the differential cross sections for elastic scattering were determined from the resulting spectra via the relative technique

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50

Tsakiris, Th, D. Cosic, N. Dimitrakopoulos, M. Kokkoris, M. Krmpotić, A. Lagoyannis, F. Maragkos, G. Provatas, and A. Ziagkova. "Differential Cross-section Measurements for Deuteron Elastic Scattering on ¹¹B." Journal of Physics: Conference Series 2326, no. 1 (October 1, 2022): 012005. http://dx.doi.org/10.1088/1742-6596/2326/1/012005.

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Abstract The implementation of boron in several fields, such as in the creation of p-type semiconductors in electronics, has created the need for the accurate quantitative determination of its depth profile concentrations in near surface layers of various matrices. In the framework of IBA techniques, a combination of Elastic Backscattering Spectroscopy (EBS), along with Nuclear Reaction Analysis (NRA), has been proposed in order to address the current needs for boron depth profiling, based on the use of a proton beam. Deuterons offer superior mass resolution with respect to protons, having similar stopping power values, but, unfortunately, the lack of experimental datasets concerning the deuteron elastic scattering on boron impedes their use. Thus, in the present work, the first set of measurements for the 11B(d,d0) differential cross sections covering the Ed,lab=1300-1860 keV energy range for the backscattering angles of 150°, 160° and 170° was carried out. The study was conducted at the 5.5 MV Tandem Accelerator of the Institute of Nuclear and Particle Physics, in the National Center of Scientific Research “Demokritos”, Athens, Greece. The target was a thin, self-supporting aluminum foil, upon which a thin natB (isotopic ratio: 11B 80.1%, 10B 19.9%) layer was deposited using the sputtering technique at RBI, Zagreb, Croatia, followed by the evaporation of an ultra-thin layer of 197Au on top for wear protection and normalization purposes. The outgoing particles were detected using 6 Silicon Surface Barrier (S.S.B.) detectors and the differential cross sections for the elastic scattering were determined from the resulting spectra via the relative measurement technique.

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