Relevant bibliographies by topics / SiGe, quantum well, photoluminescence, carrier dynamics

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Conference papers

Academic literature on the topic 'SiGe, quantum well, photoluminescence, carrier dynamics'

Author: Grafiati
Published: 9 March 2023
Last updated: 11 March 2023

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Journal articles on the topic "SiGe, quantum well, photoluminescence, carrier dynamics"

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Lee, Zhen Sheng, Ling Min Kong, Zhe Chuan Feng, Gang Li, Hung Lin Tsai, and Jer Ren Yang. "Luminescence Dynamics and Structural Investigation of InGaN/GaN Multiple Quantum Well Light Emitting Diodes." Advanced Materials Research 216 (March 2011): 445–49. http://dx.doi.org/10.4028/www.scientific.net/amr.216.445.

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Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) have been studied by temperature dependent photoluminescence (PL), photoluminescence excitation (PLE) and time-resolved photoluminescence (TRPL) spectroscopic techniques. Two typical samples are studied, both consisting of five periods of InGaN wells with different indium compositions of 21% and 24%, respectively. According to the PL and PLE measurement results, large values of activation energy and Stokes’ shift are obtained. This indicates that higher Indium composition results in an increase of composition fluctuation in the InGaN MQW region, showing the stronger carrier localization effect. The lifetime at the low-energy side of the InGaN peaks is longer for higher indium composition, as expected from the larger Stokes shift.
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Ng, T. K., S. F. Yoon, S. Z. Wang, L. H. Lin, Y. Ochiai, and T. Matsusue. "Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics." Journal of Applied Physics 94, no. 5 (2003): 3110–14. http://dx.doi.org/10.1063/1.1601297.

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Hung, K. M., J. Y. Kuo, C. C. Hong, H. H. Cheng, G. Sun, and R. A. Soref. "Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well." Applied Physics Letters 96, no. 21 (2010): 213502. http://dx.doi.org/10.1063/1.3432075.

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WENG, GUO-EN, BAO-PING ZHANG, MING-MING LIANG, et al. "OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS." Functional Materials Letters 06, no. 02 (2013): 1350021. http://dx.doi.org/10.1142/s1793604713500215.

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Optical properties and carrier dynamics of InGaN/GaN asymmetric coupled quantum wells (ACQWs) are studied by excitation-power-dependent photoluminescence (PL), photoreflectance (PR) and time-resolved PL (TRPL) experiments. Under weak excitations, only the emission from the widest well is observed due to the tunneling from narrower to wider wells. Under strong excitations, the carrier distribution becomes more uniform and an enhanced emission from the mid well (2.5 nm well) is observed. Dependence of the PL intensity on excitation power is well explained by a rate equation model. The energy levels in the ACQW structure are clearly revealed by PR measurements and are in good agreement with calculations. Our results indicate that the enhanced emission from the mid well is ascribed to "reverse tunneling" from 3.0 to 2.5 nm well, which is confirmed by TRPL experiments.
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KOCHERESHKO, V. P., A. V. PLATONOV, G. V. MIKHAILOV, et al. "TEMPORAL DYNAMICS OF EXCITON–TRION SYSTEM." International Journal of Nanoscience 02, no. 06 (2003): 453–59. http://dx.doi.org/10.1142/s0219581x03001553.

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Time-resolved and time-integrated circularly-polarized photoluminescence of excitons and trions have been studied in external magnetic fields up to 10 T. ZnSe-based quantum well structures of n-type with carrier densities varied from 5×109 to 1011 cm -2 were used in this study. Absence of the chemical equilibrium in the exciton–trion system has been demonstrated at low temperatures (<10 K ). The recovery of the equilibrium has been found at elevated temperatures (<15 K ).
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Lockwood, D. J., N. L. Rowell, A. Benkouider, A. Ronda, L. Favre, and I. Berbezier. "Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)." Beilstein Journal of Nanotechnology 5 (December 30, 2014): 2498–504. http://dx.doi.org/10.3762/bjnano.5.259.

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We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/Si(111) substrates. The production method employs Au catalysts with self-limited sizes deposited in SiO2-free sites opened-up in the substrate by focused ion beam patterning for the preferential nucleation and growth of these well-organized NWs. The NWs thus produced have a diameter of 200 nm, a length of 200 nm, and a Ge concentration x = 0.15. Their photoluminescence (PL) spectra were measured at low temperatures (from 6 to 25 K) with excitation at 405 and 458 nm. There are four major features in the energy range of interest (980–1120 meV) at energies of 1040.7, 1082.8, 1092.5, and 1098.5 meV, which are assigned to the NW-transverse optic (TO) Si–Si mode, NW-transverse acoustic (TA), Si–substrate–TO and NW-no-phonon (NP) lines, respectively. From these results the NW TA and TO phonon energies are found to be 15.7 and 57.8 meV, respectively, which agree very well with the values expected for bulk Si1− x Ge x with x = 0.15, while the measured NW NP energy of 1099 meV would indicate a bulk-like Ge concentration of x = 0.14. Both of these concentrations values, as determined from PL, are in agreement with the target value. The NWs are too large in diameter for a quantum confinement induced energy shift in the band gap. Nevertheless, NW PL is readily observed, indicating that efficient carrier recombination is occurring within the NWs.
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Güçlü, A. D., C. Rejeb, R. Maciejko, D. Morris, and A. Champagne. "Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure." Journal of Applied Physics 86, no. 6 (1999): 3391–97. http://dx.doi.org/10.1063/1.371219.

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Chi, Haitao, Yu Du, and Gongyu Li. "Analysis of InGaN Multiple-Quantum-Well Photoelectric Device of Visible Light Communication." Journal of Nanoelectronics and Optoelectronics 15, no. 7 (2020): 909–16. http://dx.doi.org/10.1166/jno.2020.2850.

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The key to achieving high-speed and high-quality visible light communication is to increase the modulation speed of Light-Emitting Diode (LED). Therefore, in this study, the influence of the Composite Mechanism of Carrier (CMC) on the modulation speed of LED is studied by designing different structures of the InGaN Multi-quantum-well (MQW) LED active region. Because the carrier subspace waves function of narrow quantum well LED overlaps more frequently and the electron leakage effect is more significant, the compound rate is faster and the modulation bandwidth is higher. InGaN quantum barrier LED with a content of 1% can increase the weight of radiation recombination, which makes the modulation bandwidth higher than GaN quantum barrier LEDs; when the in content is 5%, electron leakage and Auger recombination have a dominant position. Moreover, because these two compounding mechanisms have a fast compounding rate, the modulation bandwidth is significantly increased. Then the 405 nm laser-excited photoluminescence (PL) is introduced to analyze the carrier dynamics in the LED and obtain the related processes of carrier distribution and transport. The proposed carrier microscopic model can well explain change characteristics of the PL luminescence peak, luminous intensity, and half-height width of InGaN/GaN MQW LED with different excitation wavelengths. At low temperature, the PL peak of the InGaN/GaN quantum well LED redshifts with the increase of temperature, because the weakly bound carrier transfers the obtained energy to the deeply bound energy level of high In content.
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Li, Jianfei, Duo Chen, Kuilong Li, et al. "Carrier Dynamics in InGaN/GaN-Based Green LED under Different Excitation Sources." Crystals 11, no. 9 (2021): 1061. http://dx.doi.org/10.3390/cryst11091061.

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The excitation power and temperature dependence of the photoluminescence (PL) and electroluminescence (EL) spectra were studied in green InGaN/GaN multiple quantum well (MQW)-based light-emitting diodes (LED). An examination of the PL-325, PL-405, and EL spectra at identical optical or electrical generation rates at room temperature showed that the normalized spectra exhibited different characteristic peaks. In addition, the temperature behavior of the peak energy was S-shaped for the PL-405 spectrum, while it was V-shaped for the EL spectrum. These measurement results demonstrate that the excitation source can affect the carrier dynamics about the generation (injection), transfer, and distribution of carriers.
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Jang, D. J., J. T. Olesberg, M. E. Flatté, Thomas F. Boggess, and T. C. Hasenberg. "Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion." Applied Physics Letters 70, no. 9 (1997): 1125–27. http://dx.doi.org/10.1063/1.118504.

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Dissertations / Theses on the topic "SiGe, quantum well, photoluminescence, carrier dynamics"

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GATTI, ELEONORA. "Recombination processes and carrier dynamics in Ge/SiGe multiple quantum wells." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2012. http://hdl.handle.net/10281/28451.

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Ge/SiGe quantum wells (QWs) are a new system characterized by optical and electronic properties different from those commonly observed in the more widely studied QWs based on III-V semiconductors. These peculiar properties are due to the type-I band alignment for both the Γ- and the L-type states and to the small energy distance between the direct and the indirect bad gap in Ge, which provides Ge/SiGe QWs with a so-called quasi-direct optical behavior. Moreover, these systems are of potential interest for the integration of good optical properties on the CMOS platform: indeed, room temperature electroluminescence, optical gain and an efficient Quantum Confined Stark Effect have all been demonstrated on Ge/SiGe QWs. This thesis is aimed at a detailed and systematic study of the recombination processes and of the carrier dynamics of compressively strained Ge/SiGe QWs with Ge-rich barriers. Different optical spectroscopy techniques have been employed and measurements as a function of different parameters have been performed. The origin and the decay of the direct and the indirect emission, the thermalization paths, and the scattering phenomena that occur in Ge/SiGe QWs have all been analyzed. An overall picture of carrier dynamics in these systems summarizes all the experimental evidences, and the typical times of the different processes are provided. These results enable a deeper understanding of the intricate and rich carrier dynamics that characterize Ge/SiGe QWs.
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Davies, Matthew John. "Optical studies of InGaN/GaN quantum well structures." Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/optical-studies-of-ingangan-quantum-well-structures(f6c6e59b-8366-44aa-b149-9338d3f03dc0).html.

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In this thesis I present and discuss the results of optical spectroscopy performed on InGaN/GaN single and multiple quantum well (QW) structures. I report on the optical properties of InGaN/GaN single and multiple QW structures, measured at high excitation power densities. I show a correlation exists between the reduction in PL efficiency at high excitation power densities, the phenomenon so-called ``efficiency-droop'', and a broadening of the PL spectra. I also show a distinct change in recombination dynamics, measured by time-resolved photoluminescence (PL), which occurs at the excitation power densities for which efficiency droop is measured. The broadening of the PL spectra at high excitation power densities is shown to occur due to a rapidly redshifting, short-lived high energy emission band. The high energy emission band is proposed to be due to the recombination of weakly localised/delocalised carriers occurring as a consequence of the progressive saturation of the local potential fluctuations responsible for carrier localisation, at high excitation power densities. I report on the effects of varying threading dislocation (TD) density on the optical properties of InGaN/GaN multiple QW structures. No systematic relationship exists between the room temperature internal quantum efficiency (IQE) and the TD density, in a series of nominally identical InGaN/GaN multiple QWs deposited on GaN templates of varying TD density. I also show the excitation power density dependence of the PL efficiency, at room temperatures, is unaffected for variation in the TD density between 2 x107 and 5 x109 cm-2. The independence of the optical properties to TD density is proposed to be a consequence of the strong carrier localisation, and hence short carrier diffusion lengths. I report on the effects of including an InGaN underlayer on the optical and microstructural properties of InGaN/GaN multiple QW structures. I show an increase in the room temperature IQE occurs for the structure containing the InGaN underlayer, compared to the reference. I show using PL excitation spectroscopy that an additional carrier transfer and recombination process occurs on the high energy side of the PL spectrum associated with the InGaN underlayer. Using PL decay time measurements I show the additional recombination process for carriers excited in the underlayer occurs on a faster timescale than the recombination at the peak of the PL spectrum. The additional contribution to the spectrum from the faster recombination process is proposed as responsible for the increase in room temperature IQE.
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Huang, Hsiao-Tzu, and 黃孝慈. "Carrier dynamics and photoluminescence study in type II GaAs/GaAs1-xSbx quantum well." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/3gj4qj.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>107<br>X-ray diffraction (XRD) is performed to characterize the compositional structure and interfacial properties within GaAs/GaAs1-xSbx single quantum well with (x=0.352, 0.405). Optical properties and carrier dynamics are then investigated by photoluminescence(PL) as a function of temperature, power, time-resolved photoluminescence (TRPL) and photoconductivity (PC). In temperature-dependent PL, the effect of carrier confinement in QW and the thermal activation cause emission peaks to be dependent on GaAsSb at low temperature and GaAs above 200K. A large blueshift is observed with increased excitation powers due to band filling of localized states at low intensities and band bending at high intensities. The sublinear relationship between the integrated intensities and power at different temperatures also reveal the competition between various recombination mechanisms. A single exponential decay function is fitted to obtain the carrier decay time and the effect of hole leakage reducing Auger recombination and thermal activation of localized states affect the recombination rate in the range of 80-300K. Finally, the band edge transition for heavy hole and light hole in PC spectra are identified at low temperature and PC intensity subsequently reduces due to surface recombination at high energy.
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Books on the topic "SiGe, quantum well, photoluminescence, carrier dynamics"

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Carrier Dynamics In Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence. Storming Media, 2002.

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Conference papers on the topic "SiGe, quantum well, photoluminescence, carrier dynamics"

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Olbright, G. R., A. Owyoung, H. P. Hjalmarson та T. M. Brennan. "Carrier-Density- and Excitation-Energy-Dependent Γ-X Photoluminescence of Type-II GaAs/AlAs Superlattices". У Quantum Wells for Optics and Opto-Electronics. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.tud3.

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Recently, "Type-II" semiconductor superlattices characterized by a "staggered" alignment of the valence and conduction bands have attracted much interest.1-5 Considerable effort has been directed toward understanding the optical properties of these structures. We focus our attention on a subclass of GaAs/AlAs superlattices in which quantum size effects produce the staggered Type-II band structure as illustrated in Figure 1. Although the linear optical spectroscopy of these structures is fairly well understood, to date there is a paucity of research on their nonlinear optical properties and inter-subband and inter-layer relaxation dynamics.
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Tobin, M. S., G. W. Bryant, R. P. Leavitt, and J. L. Bradshaw. "Simultaneous electron and hole tunneling in coupled triple quantum wells." In OSA Annual Meeting. Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.wb1.

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We are investigating triple quantum-well (TQW) structures, in which carrier generation occurs in the central well and charge transfer occurs to the wells on either side of the central well. These structures should provide greater flexibility than coupled double-well structures for the control of charge transfer between the wells. Using effective mass and tight-binding models, we have designed TQW GaAs/AlGaAS structures to have a simultaneous resonance such that resonant electron transfer occurs to one side well and resonant hole transfer occurs to the other side well at the same bias. We have grown by MBE TQW structures designed to have a simultaneous electron-hole resonance and, for comparison, samples with only an electron resonance and others with only a hole resonance. The resonances have been identified by photocurrent spectroscopy. The dynamics of carrier recombination and charge transfer have been investigated by time-resolved photoluminescence and will be described.
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Fouquet, J. E., A. E. Siegman, R. D. Burnham, and T. L. Paoli. "Time-Resolved Photoluminescence of GaAs/AlxGa1−xAs Quantum Well Structures Grown by Metal-Organic Chemical Vapor Deposition." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/peo.1985.we8.

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Previous studies of time-resolved photoluminescence from GaAs/Al x Ga1− x As quantum well structures have examined material grown by molecular beam epitaxy. The large differences in behavior seen by different groups suggests a strong dependence of carrier dynamics on material. Until now, time-resolved photoluminescence from GaAs/Al x Ga1− x As quantum wells grown by metal-organic chemical vapor deposition (MOCVD) has not been extensively studied. We report data taken at temperatures from 16K to 300K and over a wide range of excitation densities on MOCVD quantum well structures. These structures were grown in a reactor which routinely produces high quality laser material, and exhibit high photoluminescence efficiency at room temperature.
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Peter, G., R. Fischer, E. O. Göbel, et al. "Density dependence of recombination rates in a gated GaAs/AlGaAs modulation doped quantum well." In Quantum Wells for Optics and Opto-Electronics. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.mc2.

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During the last years the physical properties of modulation doped quantum wells (MDQW) have attracted much attention from both a device as well as from a fundamental physics point of view. With these structures a degenerate one and more component Fermi system of reduced dimensionality can be realized, and e. g. many body effects can be investigated by means of optical spectroscopy /1-4/. In this paper we report on experimental studies of the carrier density dependence of the recombination dynamics. We have investigated a 13 nm wide n-type single MDQW by means of picosecond photoluminescence (PL) spectroscopy at low temperature (T = 4K). An external voltage perpendicular to the quantum well layer can be applied via a Schottky contact (evaporated on the surface of the sample) in order to vary the electron concentration in the quantum well between ns = 0 up to about 3 • 1011 cm-2 (details are reported in ref. /2,5,6/). Consequently, we can cover the regime where excitonic recombination takes place up to densities where the optical properties are governed by a one component free carrier plasma. We thereby have avoided the crucial disadvantage of comparing different samples, where the sample to sample variations of well width, interface quality, PL efficiency etc. complicate the physical interpretation.
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