Journal articles: 'SiC thin film'

1

Nagai, T., and M. Itoh. "SiC thin-film thermistors." IEEE Transactions on Industry Applications 26, no. 6 (1990): 1139–43. http://dx.doi.org/10.1109/28.62400.

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Nagai, Takeshi, Kazushi Yamamoto, and Ikuo Kobayashi. "SiC thin film thermistor." Thin Solid Films 125, no. 3-4 (March 1985): 355–59. http://dx.doi.org/10.1016/0040-6090(85)90244-5.

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Jiao, Zong Lei, and Jian Zhu. "Study of SiC’s Mechanical Property Variance Caused by Film Thickness." Key Engineering Materials 645-646 (May 2015): 400–404. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.400.

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The mechanical properties of SiC thin films deposited by chemical vapor deposition process on silicon substrate are studied using nanoindentation techniques. The SiC thin films are of three different thicknesses: 1.6μm、4.5μm、9μm. In this study, nanoindentation method is preferred due to its reliability and accuracy on determining mechanical properties from indentation load-displacement data. The mechanical properties of elastic modulus and hardness are characterized. 1.6μm SiC thin film has the following values: E=345.73Gpa, H=33.71Gpa; 4.5μm SiC thin film has the following values: E=170.18Gpa, H=10.33Gpa; 9μm SiC thin film: E=167.96Gpa, H=9.48Gpa

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Nutt, S. R., and David J. Smith. "High-resolution TEM of thin-film β-SiC interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 408–9. http://dx.doi.org/10.1017/s0424820100143638.

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Silicon carbide is a large band gap semiconductor under development for microelectronic device applications involving high temperatures, high frequencies, and high power. Single crystal thin films of high purity β-SiC can be fabricated by epitaxial CVD onto a <100> silicon wafer substrate. Epitaxial growth is achieved by a two-step process in which the surface of the silicon substrate is first converted to SiC by heating in the presence of hydrocarbon vapors, Despite the large lattice mismatch, this process results in an epitaxial film of β-SiC 10nm in thickness, upon which the SiC crystal is then chemically vapor deposited. Relatively thick (20 microns) crack-free films of SiC can thus be fabricated, although significant problems remain, such as lattice constant and thermal expansivity mismatches, and metallization and passivation of the surface. These reasons have provided the motivation for a detailed examination of interface structures in β-SiC thin films using HRTEM imaging of cross-sectional specimens.

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Marsi, Noraini, Majlis Burhanuddin Yeop, Azrul Azlan Hamzah, and Faisal Mohd-Yasin. "Growth and Characterization of (100) and (111) 3C-SiC Thin Film for MEMS Capacitive Pressure Sensor for Extreme Environments." Advanced Materials Research 1024 (August 2014): 356–59. http://dx.doi.org/10.4028/www.scientific.net/amr.1024.356.

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The (100) and (111) crystalline cubic silicon nitride (3C-SiC) thin films have been epitaxially deposited on (100) silicon substrate with the thickness of 0.5 µm and 1.0 µm. The effects of the different growth of 3C-SiC are considered as the most critical factor in determining the mechanical properties by comparing with bulk value such as Young’s modulus (~455 GPa) and hardness (~42 GPa). This paper evaluates the mechanical characteristic of the 3C-SiC-on-Si wafers to improve the 3C-SiC thin film quality. The aim is to employ the thin film as the flexible diaphragm in the MEMS capacitive pressure sensor for extreme environment. The surface morphology of thin layer of grown 3C-SiC wafers are characterized by X-ray diffraction (XRD), Infinite Focus Microscopy (IFM), scanning electron microscopy (SEM) and nano-indentation test. The results show the superior mechanical strengths of both (100) and (111) 3C-SiC thin films over (100) Si. To conclude, these results show that (100) and (111) 3C-SiC are indeed high quality thin film mechanically compare to (100) Si thin film, and is suitable to employed as the flexible diaphragm of the MEMS capacitive pressure sensor for extreme environments.

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Heimann, D., T. Wagner, J. Bill, F. Aldinger, and F. F. Lange. "Epitaxial growth of β–SiC thin films on a 6H–SiC substrate using the chemical solution deposition method." Journal of Materials Research 12, no. 11 (November 1997): 3099–101. http://dx.doi.org/10.1557/jmr.1997.0403.

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A polyvinylmethylsilane precursor has been used for the epitaxial growth of SiC thin films on 6H–SiC single crystal substrates. The films were prepared by dipping the single crystal 6H–SiC substrates into the precursor polymer solution with subsequent thermal treatments at different temperatures. Transmission electron microscopy (TEM) was used to characterize the microstructure and chemistry of the different SiC films. At 1100 °C, the film was amorphous and contained substantial oxygen. At 1600 °C, an epitaxial, single crystalline β–SiC film was observed.

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Sankin, A. V., V. I. Altukhov, and Z. I. Dadasheva. "Thin SiC and Gan-Based Films and Structures: Production and Properties." Key Engineering Materials 909 (February 4, 2022): 156–61. http://dx.doi.org/10.4028/p-uvvw11.

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The article describes the methods for producing thin films and structures based on SiC, GaN and their SiC – AlN and Al – GaN solid solutions, as well as mathematical models of film growth and properties-behavior of the I–V characteristics of heterostructures. Two models were developed for producing thin films and heterostructures based on SiC, GaN and their solid solutions. The first model makes it possible to determine the sputtering coefficient when producing films by high-frequency magnetron sputtering. In the second quantum-mechanical model, the equation for the gap of the mean field of condensate was built and the growth rate of a film on the crystalline substrate was determined. The current-voltage characteristic of the transistor based on the AlGaN / GaN heterosystem was provided. The models for the growth of heterostructure films made it possible to modify the technologies for producing perfect SiC crystals and SiC – AlN solid solutions. It was possible to offer a pilot plant for growing SiC crystals with improved control over the modes of induction high-temperature heating of the growth crucible.

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Wang, Li, Sima Dimitrijev, Glenn Walker, Ji Sheng Han, Alan Iacopi, Philip Tanner, Leonie Hold, Yu Zhao, and Francesca Iacopi. "Color Chart for Thin SiC Films Grown on Si Substrates." Materials Science Forum 740-742 (January 2013): 279–82. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.279.

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In this paper, a color chart was defined for thin SiC films grown on Si substrates. For SiC films thinner than 500 nm, the surface color was observed using an optical microscope with the incident light normally illuminated on the SiC surface. An image of the surface was then taken by a camera attached to the optical microscope and the surface color was defined using RGB code. For SiC films thicker than 500 nm, the image taken by the camera did not represent the real color of the SiC film. Therefore, for these thicker SiC films, the colors were defined by observing the films under daylight fluorescent lighting by naked eyes. It was found that the colors of the SiC films vary periodically as the thickness increased. No color saturation was found for SiC films up to 1185 nm thick.

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Čtvrtlík, Radim, Jan Tomastik, and Petr Schovánek. "High Temperature Nanoindentation Testing of Amorphous SiC and B₄C Thin Films." Defect and Diffusion Forum 368 (July 2016): 115–18. http://dx.doi.org/10.4028/www.scientific.net/ddf.368.115.

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Amorphous silicon carbide (a-SiC) and boron carbide (a-B4C) thin films were deposited using reactive magnetron sputtering of SiC and B4C target, respectively. Nanoindentation tests performed up to 450 °C in air were performed to explore and compare their hardness and elastic modulus.Hardness of a-B4C film decreases at smaller rate in comparison to a-SiC film up to 450 °C. Similarly, elastic modulus value of B4C is more stable with temperature than that of a-SiC.

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Alisha, P. Chander, V. K. Malik, and R. Chandra. "Structural and Electrical Transport Properties of Sputter-Deposited SiC Thin Films." Journal of Physics: Conference Series 2518, no. 1 (June 1, 2023): 012016. http://dx.doi.org/10.1088/1742-6596/2518/1/012016.

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Abstract In the present study, SiC films are fabricated by a cost-effective and simple approach of RF magnetron sputtering. The fabrication of SiC thin films is carried out at 900 °C in 5mT Ar atmosphere at 150W power. Thus, the thin films are produced at lower temperature and toxic free environment than conventional methods. The structural characterizations of thin films are performed using XRD, XPS, FE-SEM and EDS techniques. A Metal-Semiconductor-Metal (MSM) junction is fabricated using gold electrodes by shadow sputtering in point contact geometry. The electrical transport properties of the SiC thin film are analyzed using Current-voltage (I-V) and Capacitance-Voltage-Frequency (C-V-F) measurements. The anomalous peaks observed in C-V characteristics and non-ideal behavior of I-V characteristics provide important information about electronic properties and structural aspects of fabricated thin film.

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Jin, C. G., X. M. Wu, and L. J. Zhuge. "Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition." Research Letters in Physical Chemistry 2008 (April 3, 2008): 1–5. http://dx.doi.org/10.1155/2008/760650.

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Silicon carbide (SiC) films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV) was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

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Muhanad A. Ahmed, Mohammed F. Mohammed Sabri, and Wathiq R. Abed. "The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition." ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY 9, no. 2 (November 10, 2021): 46–50. http://dx.doi.org/10.14500/aro.10852.

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In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode.

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Endrino, Jose L., and James E. Krzanowski. "Nanostructure and mechanical properties of WC–SiC thin films." Journal of Materials Research 17, no. 12 (December 2002): 3163–67. http://dx.doi.org/10.1557/jmr.2002.0457.

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The mechanical properties of WC–SiC thin films deposited by dual radio frequency magnetron sputtering were investigated. The films were characterized by x-ray photoelectron spectroscopy, x-ray diffraction (XRD), and transmission electron microscopy (TEM) to evaluate the details of the microstructure and degree of amorphization. The results indicate that small additions of SiC (<25%) can significantly increase hardness compared to a pure WC film, but higher SiC contents do not strongly affect hardness. XRD studies show the SiC had a disordering effect. TEM results showed that WC films had coarse porous structure, but films with a low silicon carbide content (approximately 10 to 25 at%) had a denser nanocrystalline structure. Samples with greater than 25% SiC were amorphous. The initial hardness increase at lower SiC contents correlated well with the observed densification, but the transition to an amorphous structure did not strongly affect hardness.

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14

Zhao, Chang, Man Zhao, Su Ye Lv, Qing Jun Liu, and Guang Jian Xing. "The Photoluminescence Spectra Research of SiC Thin Film under Different Sputtering Powers." Solid State Phenomena 295 (August 2019): 93–97. http://dx.doi.org/10.4028/www.scientific.net/ssp.295.93.

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This study prepared an SiC thin film by using the ratio frequency magnetron sputtering method, investigated the effects of different sputtering powers on the SiC material and analysed the changes in crystal morphology and photoluminescence characteristics caused by changes in the growth conditions used. It was considered that there was 6H-SiC crystal morphologies in the SiC thin film under the experimental conditions prevailing in this study. The SiC morphologies with small grain sizes intermingled and therefore formed anSiC thin film. The analyses of the photoluminescence spectra and Scanning Electron Microscope indicated that the SiC thin film materials with preferable crystal compositions could be prepared under appropriate power inputs.

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Cheng, Xiankun, Qiang Gao, Kaifeng Li, Zhongliang Liu, Qinzhuang Liu, Qiangchun Liu, Yongxing Zhang, and Bing Li. "Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition." Nanomaterials 9, no. 8 (July 24, 2019): 1061. http://dx.doi.org/10.3390/nano9081061.

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For growing high quality epitaxial VO2 thin films, the substrate with suitable lattice parameters is very important if considering the lattice matching. In addition, the thermal conductivity between the substrate and epitaxial film should be also considered. Interestingly, the c-plane of hexagonal 6H-SiC with high thermal conductivity has a similar lattice structure to the VO2 (010), which enables epitaxial growth of high quality VO2 films on 6H-SiC substrates. In the current study, we deposited VO2 thin films directly on 6H-SiC (0001) single-crystal substrates by pulsed laser deposition (PLD) and systematically investigated the crystal structures and surface morphologies of the films as the function of growth temperature and film thickness. With optimized conditions, the obtained epitaxial VO2 film showed pure monoclinic phase structure and excellent phase transition properties. Across the phase transition from monoclinic structure (M1) to tetragonal rutile structure (R), the VO2/6H-SiC (0001) film demonstrated a sharp resistance change up to five orders of magnitude and a narrow hysteresis width of only 3.3 °C.

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Ferro, Gabriel, D. Panknin, Efstathios K. Polychroniadis, Yves Monteil, Wolfgang Skorupa, and J. Stoemenos. "Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy." Materials Science Forum 483-485 (May 2005): 295–98. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.295.

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Thin 3C-SiC films epitaxially grown on Si-substrate are substantially improved by the FLASIC process, which involves irradiation with flash lamps with pulse duration of 20ms. The disadvantages of the standard FLASIC process are the undulations introduced in the SiC film due to melting of the Si-substrate and the Si mass transport near the SiC/Si interface during the flash. An improved structure was realised in order to minimize the undulations of the SiC, improving also the quality of the film. This structure involves the deposition of a silicon overlayer (SOL) on the initial SiC layer, followed by an additional SiC capping layer acting as a source for SiC transfer by liquid phase epitaxy to the lower SiC layer. Significant mass SiC transport from the upper to the lower SiC layer through the SOL occurs during the flash. The new structure is characterized as inverse - FLASiC. The structural characteristics of the new structure were studied by transmission electron microscopy and atomic force microscopy.

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Dai, Qian, Ruo Run Ma, Qing Rong Feng, Huai Zhang, Qian Qian Yang, Rui Juan Nie, and Fu Ren Wang. "Preparing Ultrathin MgB₂ Thin Film by Ex Situ Annealing of Mg-B Precursor Film." Materials Science Forum 745-746 (February 2013): 249–54. http://dx.doi.org/10.4028/www.scientific.net/msf.745-746.249.

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Ultrathin MgB2 film is essential for the fabrication of MgB2 superconducting single photon detectors (SSPDs). In this paper, we prepared 20nm and 10nm MgB2 film using ex-situ annealing of Mg-B multilayer method. The precursor films were prepared by electron beam evaporation. A flowing Mg vapour and H2 was introduced in the annealing process to keep MgB2 thin film thermodynamically stable. The annealing temperature was between 680 and 740 and annealing time was 1-10min. 20nm MgB2 films on MgO(111) substrates had the critical temperature (Tc) of 32.2K. The films grew along c-axes direction. As the substrate changed to SiC(001) and Al2O3(001), Tc decreased to 30.3K and 10.2K respectively. For 10nm MgB2 film on SiC(001) substrate, Tc was 24.2K. The self-field critical current density for 10nm and 20nm film on SiC(001) substrate was 2.1×106A/cm2 and 2.3×106A/cm2, respectively. AFM image showed that the film had a flat surface with mean roughness of 0.899nm for 10nm MgB2 film.

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Li, Yang Yang, Jun Jie Hao, Xiao Jia Wang, Rui Xin Wang, and Zhi Meng Guo. "The Study of Microstructure and Electric Resistivity of SiC Thin Films Produced by MF Magnetron Sputtering." Advanced Materials Research 567 (September 2012): 158–61. http://dx.doi.org/10.4028/www.scientific.net/amr.567.158.

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SiC films were prepared by mid-frequency (MF) magnetron sputtering with two targets (SiC and C) on monocrystalline Si(100) and Al2O3 substrates. During the study, different annealing temperatures and working pressures were set. The surface morphology of SiC films was studied by SEM, while structure was characterized using a conventional X-ray diffractometer. SEM images had shown the surface morphology of SiC films was related to substrates. It was also found that working pressure had a big influence on the structure of SiC films through the XRD patterns. The film was mainly based on 3C-SiC when working pressure wass 0.3Pa, and 4H-SiC when 0.6 Pa. Another conclusion was that the resistivity of 4H-SiC was larger than that of 3C-SiC.

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Wu, Jing, Xiaofeng Zhao, Chunpeng Ai, Zhipeng Yu, and Dianzhong Wen. "The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering." International Journal of Modern Physics B 33, no. 15 (June 20, 2019): 1950152. http://dx.doi.org/10.1142/s0217979219501522.

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To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

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Portail, Marc, Eric Frayssinet, Adrien Michon, Stéphanie Rennesson, Fabrice Semond, Aimeric Courville, Marcin Zielinski, et al. "CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth." Crystals 12, no. 11 (November 10, 2022): 1605. http://dx.doi.org/10.3390/cryst12111605.

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(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposited on 2H-AlN/Si presented a better structural quality than the 3C-SiC films grown directly on Si(111) using the well-established two-step carbonization–epitaxy process. The good lattice match of 3C-SiC with AlN may open a reliable route towards high-quality thin heteroepitaxial 3C-SiC films on a silicon wafer. Nevertheless, the 3C-SiC was featured by the presence of twinned domains and small inclusions of 6H-SiC. The formation of a thin AlSiN film at the AlN/Si interface is also reported. This is the first time such AlSiN layers are described within an AlN/Si heterostructure. Furthermore, noticeable modifications were observed in the AlN film. First, the growth process of SiC on AlN induced a reduction of the dislocation density in the AlN, attesting to the structural healing of AlN with thermal treatment, as already observed for other AlN-based heterostructures with higher-temperature processes. The growth of SiC on AlN also induced a dramatic reduction in the insulating character of the AlN, which could be related to a noticeable cross-doping between the materials.

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Chiu, Chien C., Seshu B. Desu, Gang Chen, Ching Yi Tsai, and William T. Reynolds. "Deposition of epitaxial β–SiC films on porous Si(100) from MTS in a hot wall LPCVD reactor." Journal of Materials Research 10, no. 5 (May 1995): 1099–107. http://dx.doi.org/10.1557/jmr.1995.1099.

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Epitaxial β-SiC thin films were grown on modified Si(100) substrates from methyltrichlorosilane (CH3SiCl3 or MTS) in a hot wall reactor by using low pressure chemical vapor deposition (LPCVD). At 1150 °C, the growth rate of the β-SiC films was 120 Å/min. Epitaxial β-SiC(100) thin films were deposited after the deposition time of 12.5 min. However, the crystallinity of the deposited films was influenced by the deposition time. For example, the occurrence of rotational β-SiC(100) crystals and polycrystalline β-SiC with a highly preferred orientation of (100) planes was obtained for the deposition time of 50 min. XRD and TEM showed the appearance of polycrystalline β-SiC films with a preferred orientation of β-SiC(111) after further increasing the deposition times (time ≥ 75 min). At 1100 °C, polycrystalline β-SiC films with poor surface morphology were observed even though the film had a preferred orientation of β-SiC(100) for short deposition time (e.g., 12.5 min). Polycrystalline β-SiC(111) film was obtained for the deposition time of 200 min at this temperature.

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Lee, Byung-Teak, Yang-Soo Shin, and Jin Hyeok Kim. "High-temperature interfacial reaction of an Al thin film with single-crystal 6H–SiC." Journal of Materials Research 15, no. 11 (November 2000): 2284–87. http://dx.doi.org/10.1557/jmr.2000.0327.

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Interfacial reactions between an Al thin film and a single-crystal (001) 6H–SiC substrate were investigated using x-ray diffraction and cross-sectional transmission electron microscopy. Aluminum thin films were prepared by radio-frequency magnetron sputtering method on 6H–SiC substrates at room temperature and then annealed at various temperatures from 500 to 900 °C. A columnar-type polycrystalline Al thin film was formed on a 6H–SiC substrate in the as-deposited sample. No remarkable microstructural change, compared to the as-deposited sample, was observed in the sample annealed at 500 °C for 1 h. However, it was found that the Al layer reacted with the SiC substrate at 700 °C and formed an Al–Si–C ternary compound at the Al/SiC interface. Samples annealed at 900 °C showed a double-layer structure with an Al–Si mixed surface layer and an Al–Si–C compound layer below in contact with the substrate.

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El Khakani, M. A., M. Chaker, A. Jean, S. Boily, J. C. Kieffer, M. E. O'Hern, M. F. Ravet, and F. Rousseaux. "Hardness and Young's modulus of amorphous a-SiC thin films determined by nanoindentation and bulge tests." Journal of Materials Research 9, no. 1 (January 1994): 96–103. http://dx.doi.org/10.1557/jmr.1994.0096.

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Due to its interesting mechanical properties, silicon carbide is an excellent material for many applications. In this paper, we report on the mechanical properties of amorphous hydrogenated or hydrogen-free silicon carbide thin films deposited by using different deposition techniques, namely plasma enhanced chemical vapor deposition (PECVD), laser ablation deposition (LAD), and triode sputtering deposition (TSD). a-SixC1−x: H PECVD, a-SiC LAD, and a-SiC TSD thin films and corresponding free-standing membranes were mechanically investigated by using nanoindentation and bulge techniques, respectively. Hardness (H), Young's modulus (E), and Poisson's ratio (v) of the studied silicon carbide thin films were determined. It is shown that for hydrogenated a-SixC1−x: H PECVD films, both hardness and Young's modulus are dependent on the film composition. The nearly stoichiometric a-SiC: H films present higher H and E values than the Si-rich a-SixC1−x: H films. For hydrogen-free a-SiC films, the hardness and Young's modulus were as high as about 30 GPa and 240 GPa, respectively. Hydrogen-free a-SiC films present both hardness and Young's modulus values higher by about 50% than those of hydrogenated a-SiC: H PECVD films. By using the FTIR absorption spectroscopy, we estimated the Si-C bond densities (NSiC) from the Si-C stretching absorption band (centered around 780 cm−1), and were thus able to correlate the observed mechanical behavior of a-SiC films to their microstructure. We indeed point out a constant-plus-linear variation of the hardness and Young's modulus upon the Si-C bond density, over the NSiC investigated range [(4–18) × 1022 bond · cm−3], regardless of the film composition or the deposition technique.

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Loboda, M. J., and M. K. Ferber. "Characterization of the mechanical properties of a–SiC: H films." Journal of Materials Research 8, no. 11 (November 1993): 2908–15. http://dx.doi.org/10.1557/jmr.1993.2908.

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Amorphous hydrogenated silicon carbide (a–SiC: H) thin films (t < 1 μm) were grown from two different precursor gases, a methane/silane mixture and silacyclobutane (SiC3H8). Plasma enhanced chemical vapor deposition was used to deposit a–SiC: H thin films on silicon substrates at temperatures of 175 °C and 600 °C. These a–SiC: H films were characterized using the mechanical properties microprobe (nanoindenter) and by scratch testing. Data and mechanical properties information collected from these measurements have been correlated with film process conditions and materials characteristics. A simplified approach was used to calculate the average nanoindentation hardness from shallow indentations. Using this technique, results for a silicon wafer are in good agreement with that previously reported. Analysis of the substrate influence on the thin film nanoindentation data implies that the measured hardness is relatively unaffected by the substrate, while the measured elastic properties are somewhat influenced by the substrate. The a–SiC: H film hardness is shown to depend on the precursor gas and molecular bonding, while the elastic properties vary with precursor gas, composition, and density, as influenced by the plasma source deposition power. The MPM data and scratch test data show similar correlations to plasma source power, film structure, and film composition.

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Hwang, J. D., Y. K. Fang, and T. Y. Tsai. "A vertical submicron SiC thin film transistor." Solid-State Electronics 38, no. 2 (February 1995): 275–78. http://dx.doi.org/10.1016/0038-1101(94)00120-5.

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Lu, Y. M., and M. H. Hon. "Microstructure in CVD β-SiC thin film." Scripta Metallurgica et Materialia 25, no. 9 (September 1991): 2199–201. http://dx.doi.org/10.1016/0956-716x(91)90299-g.

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Su, Jianing, Ying Yang, Xuhui Zhang, Hao Wang, and Longxiang Zhu. "Sulfur passivation of 3C-SiC thin film." Journal of Crystal Growth 505 (January 2019): 15–18. http://dx.doi.org/10.1016/j.jcrysgro.2018.09.025.

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Thompson, Margarita P., Andrew R. Drews, Changhe Huang, and Gregory W. Auner. "Temperature Effect on the Quality of A1N thin Films." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 142–48. http://dx.doi.org/10.1557/s1092578300002362.

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AlN thin films were deposited at various substrate temperatures via Plasma Source Molecular Beam Epitaxy. The films were grown on 6H-SiC (0001) substrates. Reflection High Energy Electron Diffraction and Atomic Force Microscopy showed a dramatic change in the surface morphology of the film grown at 640°C. This is attributed to a change in the growth mechanism from pseudomorphic at lower temperatures to three-dimensional at higher than 640°C temperatures. Photoreflectance measurements showed an absorption shift toward 200 nm as the deposition temperature increases which is attributed to the change in the growth mechanism at higher temperatures. X-Ray Diffraction was unable to conclusively determine the AlN (0002) peak due to a significant diffuse intensity from the SiC (0002) peak. A MIS structure was created by depositing Pt contacts on the film grown at 500°C. I-V measurements showed that the Pt/AlN contact is Schottky.

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Kong, H. S., Y. C. Wang, J. T. Glass, and R. F. Davis. "The effect of off-axis Si (100) substrates on the defect structure and electrical properties of β-SiC thin films." Journal of Materials Research 3, no. 3 (June 1988): 521–30. http://dx.doi.org/10.1557/jmr.1988.0521.

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Antiphase domain-free, monocrystalline β-SiC thin films have been epitaxially grown on off-axis Si (100) substrates. The effects of degree of misorientation and substrate preannealing on the antiphase domain boundaries (APB's) have been investigated. Wet oxidation, optical microscopy, and transmission electron microscopy were used to characterize the defect structures in both β-SiC thin films grown on exact Si (100) and on off-axis Si (100) substrates. The results revealed that many dislocations were included in APB's and that APB's were eliminated in the β-SiC thin films grown on Si (100) substrates that were oriented 2°–4° from [100] toward the [011] direction. Some APB's were observed near the edge of the β-SiC film on the 2° off-axis Si (100) substrates; however, they were eliminated by substrate preannealing. The carrier concentration and electron mobility of these β-SiC films were similar to those of β-SiC films grown on exact Si (100) substrates as determined by differential capacitance-voltage and Hall effect measurements. Au-β-SiC Schottky diodes were also fabricated on the β-SiC thin films on 4° off-axis substrates and had an ideality factor of 1.4. Differential capacitance-voltage measurements and current-voltage characteristics of Au-β-SiC Schottky diodes indicated that APB's caused significant leakage current in the β-SiC thin films.

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Albert Alim, Emilly, Muhammad Firdaus Omar, and Abd Khamim Ismail. "Luminescent Properties of SiC Thin Film Deposited by VHF-PECVD: Effect of Methane Flow Rate." Solid State Phenomena 268 (October 2017): 239–43. http://dx.doi.org/10.4028/www.scientific.net/ssp.268.239.

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Bulk silicon carbide (SiC) as light emitter is less efficient due to its indirect bandgap. Therefore, nanosized SiC thin film fabrication approach enable emission wavelength shifts due to spatial confinement. The result of luminescent study of SiC thin film deposited via very high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) are presented. Precursor gasses used were silane and methane. Methane flow rate was varied from 8 sccm to 20 sccm while other parameters were maintained. Raman spectral analysis denotes the quantum confinement effect occurrence in proportion to the methane flow rate increment. The luminescence properties of the deposited SiC thin film ranging from highly green emission (~518 nm) to highly UVB emission (~294 nm) dominant luminescence. Broad blue emission band shifted toward higher wavelength with smaller FWHM as methane flow rate is increased. This results enable the possibility of luminescent SiC thin film applications in photonics and electronic integration as blue light sources.

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Chaudhuri, J., R. Thokala, J. H. Edgar, and B. S. Sywe. "Characterization Of Single Crystal Epitaxial Aluminum Nitride Thin Films On Sapphire, Silicon Carbide And Silicon Substrates By X-Ray Double Crystal Diffractometry And Transmission Electron Microscopy." Advances in X-ray Analysis 39 (1995): 645–51. http://dx.doi.org/10.1154/s0376030800023077.

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Epitaxial AIN thin films grown on sapphire, silicon and silicon carbide substrates were studied using x-ray double crystal diffractometry and transmission electron microscopy to compare the structure, residual stress and defect concentration in these thin films. The AIN thin films was found to have a wurtzite type of structure with a small distortion in lattice parameters which results in a small residual stress of the order of 109 dynes/cm2 in the film. The strain due to lattice parameter mismatch between the substrate and film is too small to account for the residual stress present. The calculated stress from the difference in thermal expansion coefficients between the film and substrate agrees well with the experimental values. Both the x-ray and transmission electron microscopy measurements indicate a low defect density in the AIN thin film grown on 6H-SiC substrate which could be attributed to the small difference in lattice parameters between AIN and 6H-SiC. The defect density in the AIN thin film grown on other substrates were considerably higher. This is the first report of the successful growth of single crystal AIN thin films with such a low concentration of defect density.

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Vladoiu, Rodica, Aurelia Mandes, Mirela Contulov, Virginia Dinca, and Corneliu Porosnicu. "Investigation of Composition-Properties’ Relations on Silicon and Carbon Based Nanomaterials." Advanced Materials Research 816-817 (September 2013): 232–36. http://dx.doi.org/10.4028/www.scientific.net/amr.816-817.232.

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Multicomponent thin films (binary-SiC and ternary-SiCAl) as well as single thin films (silicon Si) were deposited using Thermionic Vacuum Arc (TVA) technology. The thin films were characterized using X-ray diffractometer (XRD, Philips PW1050, Cu K), scanning electron microscope (SEM, Zeiss EVO 50 SEM) accompanied with energy dispersive spectrometer and transmission electron microscope (TEM, Phillips CM 120 ST, 100 kV). The film is composed of nanoparticles very smoothly distributed of 15-30 nanometer size embedded in amorphous matrix film. The results reveal high hardness for SiC (10-40 GPa) and for SiCAl: low wear rate (6.16E-05 mm3/Nm).

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Lee, B.-T., D.-K. Kim, C.-K. Moon, J. K. Kim, Y. H. Seo, K. S. Nahm, H. J. Lee, et al. "Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors." Journal of Materials Research 14, no. 1 (January 1999): 24–28. http://dx.doi.org/10.1557/jmr.1999.0006.

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Transmission electron microscopy (TEM) was utilized to investigate microstructures of heteroepitaxial SiC/Si films, grown from single-source precursors such as tetramethylsilane [TMS, Si(CH3)4], hexamethyldisilane [HMDS, Si2(CH3)6], and 1,3-disilabutane [1,3-DSB, H3SiCH2SiH2CH3]. In the case of TMS/H2 and HMDS/H2 samples, SiC/Si films grown at relatively high precursor concentration and/or low temperatures showed columnar grains with a high degree of epitaxial relationship with the Si substrate. Higher quality films with larger grains were observed in the case of high temperature and/or low precursor concentration samples, although a high density of interfacial voids was observed. Samples grown from pure 1,3-DSB at a low pressure showed high quality single crystalline films with few interfacial voids. It was suggested that the microstructural behavior of these films closely resembles that of the SiC films formed during the carbonization of Si surfaces by the pyrolysis of hydrocarbons, in which the nucleation rate of the film at the initial stage plays a key role. The improvement achieved during the 1,3-DSB growth is proposed to be due to the low growth pressure and the 1 : 1 ratio of Si and C associated with this precursor.

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Mishra, Pratima K., and Bijayalaxmi Sahoo. "Growth of amorphous carbon and graphene on pulse laser deposited SiC films and their characterization studies." Laser and Particle Beams 31, no. 1 (December 12, 2012): 63–71. http://dx.doi.org/10.1017/s0263034612000894.

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AbstractLaser induced ablation studies have been carried out on formation of amorphous carbon and graphene on SiC thin films with their detailed characterization studies. Pulse laser ablation technique with process parameters such as 248 nm KrF excimer laser, frequency 10 Hz, 200 mJ of laser energy, and chamber pressure of 7 × 10−6 mbar has been used. Films were characterized in detail by grazing incidence X-ray diffraction, Fourier transform infrared, micro-Raman, X-ray reflectivity, Field emission scanning electron microscopic, transmission electron microscope, and Nano-indentation techniques and the results are reported. As deposited SiC film surface is rich in amorphous carbon and the same has been used as the nucleation site for further growth of graphene on SiC films. Film hardness increased from 29 GPa to 37 GPa for SiC film and graphene on SiC film (C-SiC), respectively. These films show bands due to surface phonon polariton mode in the range of 810–840 cm−1 that is a research concern today in nano-photonics area. Further these materials find applications in understanding the laser irradiation effects on SiC based nuclear fusion wall material.

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Galashev, Alexander, and Ksenia Abramova. "Molecular Dynamics Simulation of Thin Silicon Carbide Films Formation by the Electrolytic Method." Materials 16, no. 8 (April 15, 2023): 3115. http://dx.doi.org/10.3390/ma16083115.

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Silicon carbide is successfully implemented in semiconductor technology; it is also used in systems operating under aggressive environmental conditions, including high temperatures and radiation exposure. In the present work, molecular dynamics modeling of the electrolytic deposition of silicon carbide films on copper, nickel, and graphite substrates in a fluoride melt is carried out. Various mechanisms of SiC film growth on graphite and metal substrates were observed. Two types of potentials (Tersoff and Morse) are used to describe the interaction between the film and the graphite substrate. In the case of the Morse potential, a 1.5 times higher adhesion energy of the SiC film to graphite and a higher crystallinity of the film was observed than is the case of the Tersoff potential. The growth rate of clusters on metal substrates has been determined. The detailed structure of the films was studied by the method of statistical geometry based on the construction of Voronoi polyhedra. The film growth based on the use of the Morse potential is compared with a heteroepitaxial electrodeposition model. The results of this work are important for the development of a technology for obtaining thin films of silicon carbide with stable chemical properties, high thermal conductivity, low thermal expansion coefficient, and good wear resistance.

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Sano, Hideaki, Hajime Karasuyama, Guo Bin Zheng, and Yasuo Uchiyama. "Kinetics of the SiC Formation from Carbon Thin Film and SiO Gas." Materials Science Forum 510-511 (March 2006): 930–33. http://dx.doi.org/10.4028/www.scientific.net/msf.510-511.930.

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A thin film including β-silicon carbide was synthesized by a reaction of silicon monoxide gas and carbon source derived from polyimide film (PIF) at 1400°, 1500°, 1600°, 1700° and 1800°C. Formation mechanism of the SiC film was investigated thermodynamically and kinetically through the relationships among the conversion ratio of SiC, synthesis temperature and time. The formation processes were simulated based on the calculation of differential equations concerning thermodynamic and kinetic constants of 7 chemical equations. The sample obtained had a film shape similar to that of the carbon source film. The results of the time dependence curves of the conversion ratio of SiC calculated from 7 chemical equations, 14 rate constants, 2 diffusion constants, 10 chemical species and 10 differential equations are in good agreement with the experimental results of the SiC conversion ratio as a function of synthesis time. The calculation results of solving each constant suggest that the formation processes of SiC are "rate-controlled reaction at the interface" at the initial stage of the reaction, and then they gradually change to "diffusion-controlling reaction in the reacted region". In the long term synthesis, we recognized that the waste SiO with non-stoichiometric oxygen can also be used as a silicon source.

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37

Beshkova, M., B. S. Blagoev, V. Mehandzhiev, R. Yakimova, B. Georgieva, I. Avramova, P. Terziyska, and V. Strijkova. "Morphological evolution of thin AlN films grown by atomic layer deposition." Journal of Physics: Conference Series 2240, no. 1 (March 1, 2022): 012005. http://dx.doi.org/10.1088/1742-6596/2240/1/012005.

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Abstract Thin AlN films were grown using a Beneq TFS-200 ALD reactor. TMA (trimethylaluminium) and NH3 were used as precursors. The substrate temperature was 330 °C, the ALD cycles, 550. The TMA and NH3 doses (pulses) lasted 180 ms and 90 ms, followed by 2-s and 9-s nitrogen gas purge, respectively. In order to study the morphological evolution of the thin AlN films, substrates providing different surface kinetics were used: Si-face and C-face of 4°-off axis and on-axis 4H-SiC, and graphene grown on 4H-SiC by sublimation. As revealed by atomic force microscopy (AFM), the lowest RMS surface roughness of about 0.8 nm was exhibited by the AlN film deposited on Si-face on-axis 4H-SiC due to its higher surface energy which provides for better film nucleation. The chemical composition and bonding states were investigated by X-ray photoelectron spectroscopy (XPS). The existence of AlN is justified by the presence of the XPS peaks of Al 2p and N 1s at about 73.3 eV and 396.6 eV, respectively. These results are promising in view of further studies of thin AlN films properties for application in surface acoustic wave devices (SAW).

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38

Sugawara, Y., N. Shibata, S. Hara, and Y. Ikuhara. "Interface structure of face-centered-cubic-Ti thin film grown on 6H–SiC substrate." Journal of Materials Research 15, no. 10 (October 2000): 2121–24. http://dx.doi.org/10.1557/jmr.2000.0305.

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A titanium thin film was deposited on the flat (0001) face of a 6H–SiC by electron beam evaporation at room temperature in a vacuum of 5.1 × 10−8 Pa. The Ti film was epitaxially grown on the surface, and the interface between Ti and SiC was characterized by high-resolution electron microscopy. It was found that the structure of the deposited titanium is face-centered cubic (fcc), although bulk titanium metal usually has a hexagonal close-packed or body-centered cubic crystal structure. We believe that the unusual fcc structure of Ti thin film is due to the high adhesion of the film to the substrate and the high degree of coherency between them. The orientation relationship of the fcc-Ti/6H–SiC interface was (111)fcc-Ti//(0001)6H–SiC and [110]fcc-Ti//[1120]6H−SiC. Preliminary calculations indicate that this orientation relationship maximizes the lattice coherency across the interface.

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39

Gordienko, S. O., A. Nazarov, A. V. Rusavsky, A. V. Vasin, N. Rymarenko, V. G. Stepanov, T. M. Nazarova, and V. S. Lysenko. "Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO₂/Si Structures." Advanced Materials Research 276 (July 2011): 21–25. http://dx.doi.org/10.4028/www.scientific.net/amr.276.21.

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This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.

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40

Baskurt, Erdem, Tolga Tavşanoğlu, and Yücel Onüralp. "Effect of Methane Flow Rate on the Microstructural and Mechanical Properties of Silicon Carbide Thin Films Deposited by Reactive DC Magnetron Sputtering." Advances in Science and Technology 66 (October 2010): 35–40. http://dx.doi.org/10.4028/www.scientific.net/ast.66.35.

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SiC films were deposited by reactive DC magnetron sputtering of high purity (99.999%) Si target. 3 types of substrates, AISI M2 grade high speed steel, glass and Si (100) wafer were used in each deposition. The effect of different CH4 flow rates on the microstructural properties and surface morphologies were characterized by cross-sectional FE-SEM (Field-Emission Scanning Electron Microscope) observations. SIMS (Secondary Ion Mass Spectrometer) depth profile analysis showed that the elemental film composition was constant over the whole film depth. XRD (X-Ray Diffraction) results indicated that films were amorphous. Nanomechanical properties of SiC films were also investigated.

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41

Tanaka, Shun Ichiro, and Chihiro Iwamoto. "Nanoscale Dynamics at Reactive Wetting Front on SiC." Materials Science Forum 502 (December 2005): 269–74. http://dx.doi.org/10.4028/www.scientific.net/msf.502.269.

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Nanoscale singularity at the reactive wetting front on SiC (0006) was studied using video recorded in situ to clarify the dynamic atomistic behaviours of the brazing and the molten tip spreading on a high-temperature stage of a high-resolution transmission electron microscope. An atomistic process controls the wetting at the front of the spreading film where the classical macroscopic phenomenon never holds true and the singularities are observed in a precursor film. A 0.5-nm-thick precursor film spreading ahead of the main molten alloy on SiC (0006) at 1073 K and continuous spreading of the molten alloy were clearly observed on the SiC (0006) surface with a less than 1-nm-thick amorphous layer. Molten Ti and TiC nanolayers preceded the Ti5Si3 nanolayer at the tip and they traveled continuously at a velocity of 14 nm/sec on the plane perpendicular to SiC (0006). Since Ti atoms in the molten alloy diffuse sufficiently rapidly on the SiC surface to the tip, the formation of these layers may be the rate-determining step of spreading. Discontinuous spreading of the precursor tip on SiC (0006) with a thick amorphous film was observed in contrast to the continuous spreading on SiC with a thin film. This suggests that the spreading of the Ti molten alloy on SiC is also controlled by the dissolution of the amorphous layer.

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42

Moon, C. K., H. J. Song, J. K. Kim, J. H. Park, S. J. Jang, J.-B. Yoo, H.-R. Park, and Byung-Teak Lee. "Chemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers." Journal of Materials Research 16, no. 1 (January 2001): 24–27. http://dx.doi.org/10.1557/jmr.2001.0007.

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Epitaxial 3C–SiC films were grown by chemical vapor deposition on the silicon-on-insulator (SOI) substrates with 20–75-nm-thick Si top layers. A relatively low growth temperature of 1150 °C and a reduced hydrogen flow rate of 1 lpm during the precarbonization process was necessary to preserve the SOI structure and thereby obtain high-quality SiC films. The transmission electron microscopy observation of the SiC/SOI structures revealed high density of misfit dislocations in the SiC film, but no dislocation within the top Si layer. The x-ray-diffraction results did not show any significant shift of the (400) SiC peak position among the SiC/Si and the SiC/SOI samples. This strongly suggests that the Si top layer is not deformed during the SiC/SOI growth and the strain within the 3C–SiC layer is not critically affected by substituting the Si substrate with the SOI substrate, even when the Si top layer is as thin as 20 nm.

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43

Trinchi, A., W. Wlodarski, Sandro Santucci, D. Di Claudio, Maurizio Passacantando, C. Cantalini, B. Rout, S. J. Ippolito, K. Kalantar-Zadeh, and G. Sberveglieri. "Microstructural Characterisation of RF Magnetron Sputtered ZnO Thin Films on SiC." Solid State Phenomena 99-100 (July 2004): 123–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.123.

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The microstructural characterization of r.f. magnetron sputtered ZnO thin films deposited on 6H-SiC is presented with a comprehensive investigation of their properties as a function of annealing temperature and film thickness. These structures, with some modifications, are utilised as Schottky diode hydrogen gas sensors and Surface Acoustic Wave (SAW) devices.

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44

Kimura, Yutaroh, Xia Zhu, Hiromichi Toyota, Ryoya Shiraishi, Yukiharu Iwamoto, and Shinfuku Nomura. "Effect of Amorphous Silicon Carbide Interlayer on Diamond-Like Carbon Film Structure and Film Hardness." Key Engineering Materials 825 (October 2019): 99–105. http://dx.doi.org/10.4028/www.scientific.net/kem.825.99.

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This study was performed to improve the adhesiveness of a diamond-like carbon (DLC, a-C:H) layer film with an a-SiC interlayer. In previous studies, an a-SiC/DLC layer film was formed and changes in the DLC film structure and hardness caused by the thickness of the a-SiC layer were examined. After the a-SiC interlayer thickness increased and the G-peak position shifted to a lower frequency, the peak began shifting to higher frequencies. The G-peak position reached a minimum frequency at a film thickness of approximately 0.3 μm. In contrast, as the thickness of the a-SiC interlayer increased, the FWHM of the G-peak position increased almost monotonically and the number of sp3 bonds also increased. As the interlayer thickness increased, the hydrogen content in the DLC film increased, and then began decreasing, with the interlayer film thickness exhibiting a local maximum at approximately 0.3 μm. As for the DLC film hardness, a correlation between the hydrogen content and half width of the G-peak position was observed. When the hydrogen content was ≤40 at%, a positive correlation with the FWHM (G) was observed, and when the hydrogen content was 40 at% or above, a negative correlation with FWHM (G) was found. The adhesiveness of the DLC film and substrate was improved by forming an a-SiC thin film as an interlayer. The effects of the a-SiC thin film on DLC film quality were determined.

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Chung, Gwiy-Sang, and Jeong-Hak Ahn. "Electrical characteristics of polycrystalline 3C-SiC thin film diodes." Journal of Sensor Science and Technology 16, no. 4 (July 31, 2007): 259–62. http://dx.doi.org/10.5369/jsst.2007.16.4.259.

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46

Oh, Chulmin, Shijo Nagao, Tohru Sugahara, and Katsuaki Suganuma. "Pressureless Ag Thin-Film Die-Attach for SiC Devices." Materials Science Forum 821-823 (June 2015): 919–22. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.919.

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The electronic packaging has developed in the changing trend from soldering to solderless technology bonding to achieve higher performance of devices. Moreover, power electronic devices have searching for an alternative interconnection technology to replace the high temperature solder with high Pb contents, particularly suitable for next-generation wide band-gap (WBG) semiconductors such as SiC or GaN. In this study, our pressureless Ag thin-film die-attach gives an opportunity to produce the mass production by realizing low-temperature process. We demonstrate the pressureless Ag thin-film die-attach with Si and SiC to explain the mechanisms underlying the bonding process. The variation of the substrate material modifies the thermal expansion mismatch between sputtered Ag film and the substrate, and changes the bonding property, in particular die-shear strength. We reveal that the thermal stress generated by heating plays one of key roles to control the pressureless Ag thin-film die-attach process.

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47

Yi, Jian, XiaoDong He, Yue Sun, and Yao Li. "Optical properties of SIC/SIO2 composite thin film." Microwave and Optical Technology Letters 49, no. 7 (2007): 1551–53. http://dx.doi.org/10.1002/mop.22487.

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48

Geffroy, Pierre Marie, Jean François Silvain, and Thierry Chartier. "Elaboration by Tape Casting and Hot Rolling of Copper/Silicon Carbide Composite Thin Films for Microelectronic Applications." Materials Science Forum 534-536 (January 2007): 881–84. http://dx.doi.org/10.4028/www.scientific.net/msf.534-536.881.

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During the last decade, the use of metal matrix composites (MMCs) materials such as Al/SiC or CuW for microelectronic devices have made powder modules more reliable. Today, due to the continuous increasing complexity, miniaturization and high density of components in modern devices, high power microelectronic industries are looking for new adaptive thin films with high thermal conductivity, low coefficient thermal expansion, and good machinability. This paper presents an original and new elaboration method (tape casting and hot rolling) which has been optimized in order to elaborate copper/silicon carbide thin film composite materials. The first part presents the optimization of the tape casting parameters used (powder mixing; optimization of the nature and concentration of organic additives; tape casting, debinding and pre-sintering conditions). In the second part, the main characteristics of thin film obtained are discussed, such as thermomechanical properties of the composite Cu/SiC thin films.

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Anzalone, Ruggero, Massimo Camarda, Andrea Severino, Nicolo’ Piluso, and Francesco La Via. "Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition." Materials Science Forum 778-780 (February 2014): 255–58. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.255.

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In this work we analyzed the variation of wafer curvature due to the growth of thin Si layers on top of 3C-SiC/Si films. The final Si/3C-SiC/Si hetero-structure, allows not only to have a deeper understanding of the stress within the different layers, but can also be used for MEMS applications, using the Si film as sacrificial layer in order to obtain 3C-SiC free-standing structure, or for electronic application, e.g. using the thin Si layer as high quality MOSFET channel and the SiC layer as the drift region. In details, the influence on wafer curvature by the growth of thin Si layer on top on the 3C-SiC/Si film as been studied by optical profilometer. A theoretical model was also applied in order to fit the measured curvature of the hetero-structure and optimize the system. Finally, in order to study the morphology of the hetero-structure micro-Raman spectroscopy and Transmission Electron Microscopy (TEM) measurements has been performed.

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Zhao, Yong Mei, Guo Sheng Sun, Xing Fang Liu, Jia Ye Li, Wan Shun Zhao, L. Wang, Jin Min Li, and Yi Ping Zeng. "Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer." Materials Science Forum 600-603 (September 2008): 251–54. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.251.

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Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

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Journal articles on the topic 'SiC thin film'

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