Relevant bibliographies by topics / SiC thin film

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
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Academic literature on the topic 'SiC thin film'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "SiC thin film"

1

Nagai, T., and M. Itoh. "SiC thin-film thermistors." IEEE Transactions on Industry Applications 26, no. 6 (1990): 1139–43. http://dx.doi.org/10.1109/28.62400.

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Nagai, Takeshi, Kazushi Yamamoto, and Ikuo Kobayashi. "SiC thin film thermistor." Thin Solid Films 125, no. 3-4 (March 1985): 355–59. http://dx.doi.org/10.1016/0040-6090(85)90244-5.

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Jiao, Zong Lei, and Jian Zhu. "Study of SiC’s Mechanical Property Variance Caused by Film Thickness." Key Engineering Materials 645-646 (May 2015): 400–404. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.400.

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The mechanical properties of SiC thin films deposited by chemical vapor deposition process on silicon substrate are studied using nanoindentation techniques. The SiC thin films are of three different thicknesses: 1.6μm、4.5μm、9μm. In this study, nanoindentation method is preferred due to its reliability and accuracy on determining mechanical properties from indentation load-displacement data. The mechanical properties of elastic modulus and hardness are characterized. 1.6μm SiC thin film has the following values: E=345.73Gpa, H=33.71Gpa; 4.5μm SiC thin film has the following values: E=170.18Gpa, H=10.33Gpa; 9μm SiC thin film: E=167.96Gpa, H=9.48Gpa
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Nutt, S. R., and David J. Smith. "High-resolution TEM of thin-film β-SiC interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 408–9. http://dx.doi.org/10.1017/s0424820100143638.

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Silicon carbide is a large band gap semiconductor under development for microelectronic device applications involving high temperatures, high frequencies, and high power. Single crystal thin films of high purity β-SiC can be fabricated by epitaxial CVD onto a <100> silicon wafer substrate. Epitaxial growth is achieved by a two-step process in which the surface of the silicon substrate is first converted to SiC by heating in the presence of hydrocarbon vapors, Despite the large lattice mismatch, this process results in an epitaxial film of β-SiC 10nm in thickness, upon which the SiC crystal is then chemically vapor deposited. Relatively thick (20 microns) crack-free films of SiC can thus be fabricated, although significant problems remain, such as lattice constant and thermal expansivity mismatches, and metallization and passivation of the surface. These reasons have provided the motivation for a detailed examination of interface structures in β-SiC thin films using HRTEM imaging of cross-sectional specimens.
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Marsi, Noraini, Majlis Burhanuddin Yeop, Azrul Azlan Hamzah, and Faisal Mohd-Yasin. "Growth and Characterization of (100) and (111) 3C-SiC Thin Film for MEMS Capacitive Pressure Sensor for Extreme Environments." Advanced Materials Research 1024 (August 2014): 356–59. http://dx.doi.org/10.4028/www.scientific.net/amr.1024.356.

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The (100) and (111) crystalline cubic silicon nitride (3C-SiC) thin films have been epitaxially deposited on (100) silicon substrate with the thickness of 0.5 µm and 1.0 µm. The effects of the different growth of 3C-SiC are considered as the most critical factor in determining the mechanical properties by comparing with bulk value such as Young’s modulus (~455 GPa) and hardness (~42 GPa). This paper evaluates the mechanical characteristic of the 3C-SiC-on-Si wafers to improve the 3C-SiC thin film quality. The aim is to employ the thin film as the flexible diaphragm in the MEMS capacitive pressure sensor for extreme environment. The surface morphology of thin layer of grown 3C-SiC wafers are characterized by X-ray diffraction (XRD), Infinite Focus Microscopy (IFM), scanning electron microscopy (SEM) and nano-indentation test. The results show the superior mechanical strengths of both (100) and (111) 3C-SiC thin films over (100) Si. To conclude, these results show that (100) and (111) 3C-SiC are indeed high quality thin film mechanically compare to (100) Si thin film, and is suitable to employed as the flexible diaphragm of the MEMS capacitive pressure sensor for extreme environments.
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Heimann, D., T. Wagner, J. Bill, F. Aldinger, and F. F. Lange. "Epitaxial growth of β–SiC thin films on a 6H–SiC substrate using the chemical solution deposition method." Journal of Materials Research 12, no. 11 (November 1997): 3099–101. http://dx.doi.org/10.1557/jmr.1997.0403.

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A polyvinylmethylsilane precursor has been used for the epitaxial growth of SiC thin films on 6H–SiC single crystal substrates. The films were prepared by dipping the single crystal 6H–SiC substrates into the precursor polymer solution with subsequent thermal treatments at different temperatures. Transmission electron microscopy (TEM) was used to characterize the microstructure and chemistry of the different SiC films. At 1100 °C, the film was amorphous and contained substantial oxygen. At 1600 °C, an epitaxial, single crystalline β–SiC film was observed.
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Sankin, A. V., V. I. Altukhov, and Z. I. Dadasheva. "Thin SiC and Gan-Based Films and Structures: Production and Properties." Key Engineering Materials 909 (February 4, 2022): 156–61. http://dx.doi.org/10.4028/p-uvvw11.

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The article describes the methods for producing thin films and structures based on SiC, GaN and their SiC – AlN and Al – GaN solid solutions, as well as mathematical models of film growth and properties-behavior of the I–V characteristics of heterostructures. Two models were developed for producing thin films and heterostructures based on SiC, GaN and their solid solutions. The first model makes it possible to determine the sputtering coefficient when producing films by high-frequency magnetron sputtering. In the second quantum-mechanical model, the equation for the gap of the mean field of condensate was built and the growth rate of a film on the crystalline substrate was determined. The current-voltage characteristic of the transistor based on the AlGaN / GaN heterosystem was provided. The models for the growth of heterostructure films made it possible to modify the technologies for producing perfect SiC crystals and SiC – AlN solid solutions. It was possible to offer a pilot plant for growing SiC crystals with improved control over the modes of induction high-temperature heating of the growth crucible.
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Wang, Li, Sima Dimitrijev, Glenn Walker, Ji Sheng Han, Alan Iacopi, Philip Tanner, Leonie Hold, Yu Zhao, and Francesca Iacopi. "Color Chart for Thin SiC Films Grown on Si Substrates." Materials Science Forum 740-742 (January 2013): 279–82. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.279.

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In this paper, a color chart was defined for thin SiC films grown on Si substrates. For SiC films thinner than 500 nm, the surface color was observed using an optical microscope with the incident light normally illuminated on the SiC surface. An image of the surface was then taken by a camera attached to the optical microscope and the surface color was defined using RGB code. For SiC films thicker than 500 nm, the image taken by the camera did not represent the real color of the SiC film. Therefore, for these thicker SiC films, the colors were defined by observing the films under daylight fluorescent lighting by naked eyes. It was found that the colors of the SiC films vary periodically as the thickness increased. No color saturation was found for SiC films up to 1185 nm thick.
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Čtvrtlík, Radim, Jan Tomastik, and Petr Schovánek. "High Temperature Nanoindentation Testing of Amorphous SiC and B4C Thin Films." Defect and Diffusion Forum 368 (July 2016): 115–18. http://dx.doi.org/10.4028/www.scientific.net/ddf.368.115.

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Amorphous silicon carbide (a-SiC) and boron carbide (a-B4C) thin films were deposited using reactive magnetron sputtering of SiC and B4C target, respectively. Nanoindentation tests performed up to 450 °C in air were performed to explore and compare their hardness and elastic modulus.Hardness of a-B4C film decreases at smaller rate in comparison to a-SiC film up to 450 °C. Similarly, elastic modulus value of B4C is more stable with temperature than that of a-SiC.
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Alisha, P. Chander, V. K. Malik, and R. Chandra. "Structural and Electrical Transport Properties of Sputter-Deposited SiC Thin Films." Journal of Physics: Conference Series 2518, no. 1 (June 1, 2023): 012016. http://dx.doi.org/10.1088/1742-6596/2518/1/012016.

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Abstract In the present study, SiC films are fabricated by a cost-effective and simple approach of RF magnetron sputtering. The fabrication of SiC thin films is carried out at 900 °C in 5mT Ar atmosphere at 150W power. Thus, the thin films are produced at lower temperature and toxic free environment than conventional methods. The structural characterizations of thin films are performed using XRD, XPS, FE-SEM and EDS techniques. A Metal-Semiconductor-Metal (MSM) junction is fabricated using gold electrodes by shadow sputtering in point contact geometry. The electrical transport properties of the SiC thin film are analyzed using Current-voltage (I-V) and Capacitance-Voltage-Frequency (C-V-F) measurements. The anomalous peaks observed in C-V characteristics and non-ideal behavior of I-V characteristics provide important information about electronic properties and structural aspects of fabricated thin film.
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Dissertations / Theses on the topic "SiC thin film"

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Ma, Yunfei. "Micromagentic [sic] study of magnetoeleastic materials /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/7068.

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Wang, Feng. "Surface/interface modification and characterization of C-face epitaxial graphene." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53855.

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Graphene has been one of the most interesting and widely investigated materials in the past decade. Because of its high mobility, high current density, inherent strength, high temperature stability and other properties, scientists consider it a promising material candidate for the future all-carbon electronics. However, graphene still exhibits a number of problems such as an unknown interface structure and no sizable band gap. Therefore, the purpose of this thesis is to probe and solve these problems to make graphene suitable for electronics. The work focuses on high-quality C-face epitaxial graphene, which is grown on the (000-1) face (C-face) of hexagonal silicon carbide using the confinement-controlled sublimation method. C-face epitaxial graphene has much higher mobility compared to Si-face graphene, resulting from its special stacking order and interface structure, the latter of which is not fully understood. Thus, the first part of the work consists of a project, which is to investigate and modify the interface and the surface of C-face graphene by silicon deposition and annealing. Results of this project show that silicon can intercalate into the graphene-SiC interface and form SiC by bonding carbon atoms on the graphene surface. Another crucial problem of graphene is the absence of a band gap, which prevents graphene from becoming an ideal candidate for traditional digital logic devices. Therefore, the second project of this work is devoted to introducing a wide band gap into the graphene electronic structure by growing from a nitrogen-seeded SiC. After successful opening of a band gap, a pre-patterning method is applied to improve graphene thickness variations, orientational epitaxy, and the gapped electronic structure.
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Li, Xuebin. "Epitaxial graphene films on SiC : growth, characterization, and devices /." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/24670.

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Thesis (Ph.D.)--Physics, Georgia Institute of Technology, 2008.
Committee Chair: de Heer, Walter; Committee Member: Chou, Mei-Yin; Committee Member: First, Phillip; Committee Member: Meindl, James; Committee Member: Orlando, Thomas
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Saifaddin, Burhan Khalid. "Development of Deep Ultraviolet (UV-C) Thin-Film Light-Emitting Diodes Grown on SiC." Thesis, University of California, Santa Barbara, 2019. http://pqdtopen.proquest.com/#viewpdf?dispub=10975858.

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UV-C LEDs in the range of 265–280 nm are needed to develop new disinfection and biotechnology applications. The market share for UV-C LED, versus UV-C lamps (Hg discharge and Xe), increased from 8% in 2008 ($240M) to 25% in 2018 ($810M). However, while low-pressure mercury lamps are ~30% energy efficient, the best commercial UV-C LEDs in the 265–280 nm range are ~2% energy efficient; InGaN blue LEDs are 80% energy efficient. Research on AlGaN LEDs has made significant progress into AlGaN material quality (including threading dislocation density and n-AlGaN electrical conductivity) but has lagged regarding light extraction efficiency. Light extraction from UV LEDs is limited by p-GaN absorption because of the lack of p-contact to p-AlGaN with AlN fraction (AlN content > 50%). Furthermore, AlGaN emitters at the 265–280 nm range emit 40–50% of their emissions as transverse magnetic (TM) waves, which are harder to extract than transverse electric (TE) waves.

SiC is an absorbing substrate that has been largely overlooked in developing UV-C LEDs, even though it has a small lattice mismatch with AlN (~1%) and a similar Wurtzite crystal structure and is more chemically stable. We demonstrate the first lateral thin-film flip-chip (TFFC) ultraviolet (UV) light-emitting diodes grown on SiC. UV LEDs were made at 310 nm, 298 nm, 278 nm, and 265 nm.

In this dissertation, we discuss the design, epi development, and fabrication of TFFC AlGaN LEDs with reflective p-contacts. The AlGaN:Mg growth temperature and the Mg doping profile in AlGaN:Mg were found to significantly impact the electroluminescence (EL) efficiency of the AlGaN MQWs. KOH roughening enhanced the light-extraction efficiency (LEE) by 100% and by ~180–200% for UV LEDs with 10 nm p-GaN and 5 nm p-GaN, respectively, without affecting the devices’ IV characteristics. The thin-film architecture led to a high LEE of about ~28–30% without LED encapsulation when used with LEDs with 5 nm p-GaN. The best light extraction efficiency in the literature is ~24% (without LED encapsulation) for a 275 nm flip-chip LED grown on PSS sapphire substrate. KOH roughening of AlN is discussed and is compared to KOH roughening of N-Face GaN. To advance LEE further, we attempted to develop LEDs with transparent current n-AlGaN spreading layers as well as highly doped n+-AlGaN tunnel junctions on top of UV-C LEDs. Reflective and ohmic n-contacts with low resistivities were developed for the n-Al.58Ga.42N regrown by MBE. Furthermore, a highly reflective MgF2/Al omnidirectional mirror was developed, which can be used with n-contact microgrid to further enhance the LEE in UV-C LEDs with a transparent tunnel junction.

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Karnick, David A. "Miniaturization of Folded Slot Antennas through Inductive Loading and Thin Film Packaging." Case Western Reserve University School of Graduate Studies / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=case1295549545.

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Tengdelius, Lina. "Growth and Characterization of ZrB2 Thin Films." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-98308.

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In this thesis, growth of ZrB2 thin films by direct current magnetron sputtering is investigatedusing a high vacuum industrial scale deposition system and an ultra-high vacuum laboratory scalesystem. The films were grown from ZrB2 compound targets at temperatures ranging from ambient (without external heating) to 900 °C and with substrate biases from -20 to -120 V. Short deposition times of typically 100 or 300 s and high growth rates of 80-180 nm/min were emphasized to yield films with thicknesses of 300-400 nm. The films were characterized by thinfilm X-ray diffraction with the techniques θ/2θ and ω scans, pole figure measurements andreciprocal space mapping, scanning and transmission electron microscopy, elastic recoil detection analysis and four point probe measurements. The substrates applied were Si(100), Si(111),4H-SiC(0001) and GaN(0001) epilayers grown on 4H-SiC. The Si(111), 4H-SiC(0001) substrates and GaN(0001) epilayers were chosen given their small lattice mismatches to ZrB2 making them suitable for epitaxial growth.The films deposited in the industrial system were found to be close to stoichiometric with a low degree of contaminants, with O being the most abundant at a level of < 1 at.%. Furthermore, the structure of the films is temperature dependent as films deposited in this system without external heating are fiber textured with a 0001-orientation while the films deposited at 550 °C exhibitrandom orientation. In contrast, epitaxial growth was demonstrated in the laboratory scale system on etched 4H-SiC(0001) and Si(111) deposited at 900 °C following outgassing of the substrates at 300 °C and in-situ heat treatment at the applied growth temperature to remove the native oxides. However, films grown on GaN(0001) were found to be 0001 textured at the applied deposition conditions, which make further studies necessary to enable epitaxial growth on this substrate material. Four point probe measurements on the films deposited in the industrial system show typical resistivity values ranging from ˜95 to 200 μΩcm with a trend to lower values for the films deposited at higher temperatures and at higher substrate bias voltages.
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Thabethe, Thabsile Theodora. "The interfacial reaction and analysis of W thin film on 6H-SiC annealed in vacuum, hydrogen and argon." Thesis, University of Pretoria, 2017. http://hdl.handle.net/2263/65018.

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Silicon carbide (SiC) is used as the main diffusion barrier to prevent the fission products (FPs) from escaping in high temperature reactors (HTRs). It retains most of the FPs quite effectively with the exception of silver, strontium and europium. There have also been reports on the reactions between some FPs and SiC, raising some concerns on the integrity of SiC as a coating layer and questioning the ability of SiC as the main diffusion barrier. An additional protective layer of tungsten (W) is proposed to cover the SiC and probably reduce the interaction of FPs with SiC. Coating of SiC layer with W will assist in improving the shielding effect, which will allow for high burn up and enrichment without degrading the SiC. W coatings on SiC are also used for device fabrication. (Thus this study will benefit both semiconductor and nuclear application.) The study was conducted by sputter depositing W metal thin films on 6H-SiC at room temperature (RT). The effect of thermal annealing in vacuum, hydrogen (H2) and argon (Ar) of the W thin film deposited on 6H-SiC was investigated as a function of annealing temperature. The resulting solid-state reactions, phase composition and surface structural modification were investigated using Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thickness of the as-deposited layer obtained from RUMP simulations was about 73.8 nm and was composed of about 63.4 at.% W and 36.6 at.% O. The oxygen was in a form of tungsten oxide (WO3) mixed in the W thin film. The SEM and AFM images of the as-deposited samples showed that the W thin film had a uniform surface with small grains. The surface roughness (Rrms value) of the as-deposited sample was 0.4 nm. The samples where annealed from 700 °C to 1000 °C for 1h in vacuum, hydrogen (H2), and argon (Ar). From the RBS results, the initial reaction for vacuum annealed samples occurred at 850 °C, for H2 annealed samples it was 700 °C and the Ar annealed had an initial reaction at a temperature lower than 700 °C. In all the annealing atmospheres carbon (C) was found to diffuse faster than Si into the W metal. After this C diffusion reached equilibrium, Si also migrated into the W metal. A reduction of oxygen upon annealing was observed for the vacuum annealed samples. Removal of oxygen was observed for the H2 annealed samples, while oxygen was seen to diffuse to the reaction zone (RZ) for the Ar annealed samples. The phases observed from GIXRD at 700 °C for vacuum annealed samples were CW3 and WC, for H2 samples W5Si3 and WC and for Ar annealed samples W5Si3, WC, SiO2 and W2C. The formation of WSi2 and W2C was observed at 800 °C for H2 samples and 900 °C for vacuum samples. The segregation of Si towards the surface at 1000 °C for H2 samples resulted in the formation of SiO2. The results showed that annealing in different atmospheres reduces the initial reactions and phases formed. SEM and AFM revealed that the samples annealed in Ar were rougher than the vacuum and H2 samples, while the vacuum annealed samples were rougher than the H2 annealed samples. The Rrms of the samples annealed in different atmosphere followed the order: Ar ˃ Vacuum˃ H2. From the SEM and AFM images, the H2 annealed samples at 700 °C were composed of small granules which increased with annealing temperature resulting in the formation of distinct grain boundaries. The samples annealed in Ar at 700 °C were composed of big crystals which were randomly orientated. Increase in annealing temperature for the Ar samples resulted in the parasitic growth of the crystals, which is in line with Wulf’s law. The samples annealed in vacuum at 700 °C formed tungsten oxide nanowires on the W metal surface, with the W metal in a form of granules. Annealing at high temperatures resulted in the removal of the tungsten oxide nanowires on the W metal surface and parasitic growth of the crystals. The difference in the crystal growth observed during the vacuum, H2 and Ar is explained by a crystal growth model.
Thesis (PhD)--University of Pretoria, 2017.
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Baran, Andre. "Chemical bath deposited zinc cadmium sulfide and sputter deposted [sic] zinc oxide for thin film solar cell device fabrication." [Gainesville, Fla.] : University of Florida, 2009. http://purl.fcla.edu/fcla/etd/UFE0022644.

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Shelberg, Daniel Thomas. "PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS." Cleveland, Ohio : Case Western Reserve University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=case1269963941.

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Thesis (Master of Sciences (Engineering))--Case Western Reserve University, 2010
Department of Chemical Engineering Title from PDF (viewed on 2010-05-25) Includes abstract Includes bibliographical references and appendices Available online via the OhioLINK ETD Center
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Da, Conceicao Lorenzzi Jean Carlos. "Growth and doping of heteroepitaxial 3C-SiC layers on α-SiC substrates using Vapour-Liquid-Solid mechanism." Thesis, Lyon 1, 2010. http://www.theses.fr/2010LYO10179.

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L'utilisation récente d'une voie originale de croissance cristalline basée sur les mécanismes vapeur-liquide-solide (VLS) à partir d'un bain Ge-Si a permis des améliorations importantes de la qualité cristalline des couches minces hétéroépitaxiales de SiC-3C sur substrats sur substrat α-SiC(0001). Ce travail a pour but d'approfondir les connaissances sur cette technique de croissance, d'améliorer le procédé et de déterminer les propriétés du matériau élaboré. La première partie est dédiée à la compréhension et la maîtrise des différents mécanismes impliqués dans la croissance de SiC-3C par VLS. Cela a notamment permis la détermination des paramètres limitant la taille des échantillons et la démonstration des avantages à utiliser des alliages fondus contant 50 at% de Ge au lieu de 75 at%. Une étude de la croissance latérale sur substrats patternés a donné des indications intéressantes pouvant être intégrées dans le modèle d'élimination des macles. L'incorporation intentionnelle et non intentionnelle de dopants de type n et p pendant la croissance VLS a été suivie. Pour le dopage n, nous avons démontré l'existence d'un lien clair entre l'impureté N et la stabilisation du polytype SiC-3C. En outre, nous avons réussi à abaisser le dopage résiduel n des couches en dessous de 1x1017 cm-3. Pour le dopage p, le meilleur élément n'est pas le Ga mais l'Al, même s'il doit être ajouté à un alliage de type Si-Ge pour éviter l'homoépitaxie. Enfin, ces couches ont été caractérisées optiquement et électriquement par différentes techniques. Les mesures C-V et G-V ont permis d'estimer une concentration très faible (7×109 cm-2) de charges fixes dans l'oxyde SiO2 ainsi qu'une densité d'états d'interface aussi basse que 1.2×1010 cm-2eV-1 à 0.63 eV sous la bande de conduction. Ces valeurs record sont une très bonne base pour le développement d'un composant de type MOSFET en SiC-3C
Recently, the use of an original growth approach based on vapour-liquid-solid (VLS) mechanism with Ge-Si melts has led to significant improvement of the crystalline quality of the 3C-SiC thin layers heteroepitaxially grown on α-SiC(0001) substrate. This work tries to deepen the knowledge of such specific growth method, to improve the process and to determine the properties of the grown material. The first part was dedicated to the understanding and mastering of the various mechanisms involved in 3C-SiC growth by VLS mechanism. This led to the determination of the parameters limiting sample size and the demonstration of the benefits of using 50 at% Ge instead of 75 at% Ge melts. A study of lateral enlargement on patterned substrates gave some interesting hints which can be integrated in the model of twin defect elimination. The incorporation of non intentional and intentional n- and p-type dopants during VLS growth was studied. For n-type doping, a clear link between N impurity and 3C polytype stability was demonstrated. Besides, high purity layers with residual n-type doping below 1x1017 cm-3 were achieved. For p-type doping, the best element was shown to be Al and not Ga, even if it has to be alloyed with Ge-Si melts to avoid homoepitaxial growth. Finally, these layers were characterised by several optical and electrical means like Raman spectroscopy, low temperature photoluminescence, deep leveltransient spectroscopy and MOS capacitors measurements. Very low concentrationsof fixed oxide charges estimated about 7×109 cm-2 and interface states densities Dit equal to 1.2×1010 cm-2eV-1at 0.63 eV below the conduction band have been achieved. These record values are a very good base toward 3C-SiC MOSFET
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Books on the topic "SiC thin film"

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United States. National Aeronautics and Space Administration., ed. System for the growth of bulk SiC crystals by modified CVD techniques: Final report. [Washington, DC: National Aeronautics and Space Administration, 1994.

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Symposium C on Properties and Applications of SiC, Natural and Synthetic Diamond and Related Materials (1990 Strasbourg, France). SiC, natural and synthetic diamond and related materials: Proceedings of Symposium C on Properties and Applications of SiC, Natural and Synthetic Diamond and Related Materials of the 1990 E-MRS Fall conference, Strasbourg, France, November 27-30, 1990. Amsterdam: North-Holland, 1992.

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Reid, Jonathan Paul. Corrosion properties if [sic] neodymium iron boron thin films. Birmingham: University of Birmingham, 2000.

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United States. National Aeronautics and Space Administration., ed. Ultra-low-cost room temperature SiC thin films: Final report, NASA research grant no. NAG3-1828 for the period April 8, 1996 to September 30, 1996. [Cleveland, Ohio?]: The Center, 1997.

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H, Carter Calvin, and Materials Research Society. Meeting Symposium D., eds. Diamond, SiC and nitride wide bandgap semiconductors: Symposium held April 4-8, 1994, San Francisco, California, U.S. Pittsburgh, PA: Materials Research Society, 1994.

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DeMichael, Tom. Modern sci-fi films FAQ: All that's left to know about time travel, alien, robot, and out-of-this-world movies since 1970. Milwaukee, WI: Applause Theatre & Cinema Books, 2014.

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United States. National Aeronautics and Space Administration., ed. ULTRA-LOW-COST ROOM TEMPERATURE SIC THIN FILMS FINAL REPORT... NASA/CR-97-207101... APR. 7, 1998. [S.l: s.n., 1999.

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National Aeronautics and Space Administration (NASA) Staff. Durability Evaluation of a Thin Film Sensor System with Enhanced Lead Wire Attachments on Sic/Sic Ceramic Matrix Composites. Independently Published, 2018.

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Milosevich, Zoran. Perfomance [sic] tests of a three-element thin film detector with an analysis of large scattering angle charge state characteristics of germanium and selenium ions. 1991.

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Gippius, A. A., R. Helbig, and J. P. F. Sellschop. SiC, Natural and Synthetic Diamond and Related Materials. Elsevier Science & Technology Books, 1992.

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Book chapters on the topic "SiC thin film"

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Onuma, Y., S. Miyashita, Y. Nishibe, K. Kamimura, and K. Tezuka. "Thin Film Transistors Using Polycrystalline SiC." In Springer Proceedings in Physics, 212–16. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-75048-9_42.

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Bishop, S. G., J. A. Freitas, T. A. Kennedy, W. E. Carlos, W. J. Moore, P. E. R. Nordquist, and M. L. Gipe. "Donor Identification in Thin Film Cubic SiC." In Amorphous and Crystalline Silicon Carbide and Related Materials, 90–98. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93406-3_12.

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Zhuang, Hao, and Xin Jiang. "Allylamine Functionalization of 3C-SiC Thin Film." In PRICM, 1853–61. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118792148.ch231.

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Zhuang, Hao, and Xin Jiang. "Allylamine Functionalization of 3C-SiC Thin Film." In Proceedings of the 8th Pacific Rim International Congress on Advanced Materials and Processing, 1853–61. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-48764-9_231.

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Davis, Robert F., S. Tanaka, S. Kern, M. Bremser, K. S. Ailey, W. Perry, and T. Zheleva. "Microstructure and Properties of SiC/SiC and SiC/III-V Nitride Thin Film Heterostructural Assemblies." In Ceramic Microstructures, 629–36. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5393-9_63.

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Nakasa, Keijiro, Masahiko Kato, and Jin Hua Zheng. "Wear and Delamination Behavior of SiC Thin Film under Repeated Sliding Load." In The Mechanical Behavior of Materials X, 669–72. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-440-5.669.

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Sano, Hideaki, Hajime Karasuyama, Guo Bin Zheng, and Yasuo Uchiyama. "Kinetics of the SiC Formation from Carbon Thin Film and SiO Gas." In Materials Science Forum, 930–33. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-995-4.930.

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Colder, H., M. Morales, Richard Rizk, and I. Vickridge. "Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies." In Materials Science Forum, 287–90. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.287.

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Hixson, Earl C., C. Suryanarayana, Graham G. W. Mustoe, and John J. Moore. "Modeling Thermal Stresses and Measuring Thin Film CTE in MoSi2and MoSi2+SiC Composite Coatings on Molybdenum." In Elevated Temperature Coatings, 109–18. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118787694.ch8.

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Bhimasingu, Venkataramesh, Nilesh J. Vasa, and I. A. Palani. "Influence of Substrate Temperature, Pressure and Grit Size on Synthesis of SiC Thin Film by Pulsed Laser Deposition Technique." In Communications in Computer and Information Science, 379–88. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-35197-6_42.

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Conference papers on the topic "SiC thin film"

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Chen, G., Z. Y. Li, S. Bai, and P. Han. "Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792156.

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Shen, Zhenfeng, and Jinsong Gao. "Surface modification of SiC mirror by IARE method." In Seventh International Conference on Thin Film Physics and Applications, edited by Junhao Chu and Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888297.

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Jia, Renxu, Yimen Zhang, Yuming Zhang, and Yuehu Wang. "Nitrogen incorporation characteristics of 4H-SiC epitaxial layer." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792363.

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Jia, Wei, Yuming Zhang, Yimen Zhang, Renxu Jia, and Hui Guo. "Simulation of SiC deposition in a hot wall CVD reactor." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792270.

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Xiao, Xingcheng, Lixin Song, Weihui Jiang, and Xingfang Hu. "Sputtering deposition and optical properties of SiC x N y films." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408319.

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KRUANGAM, Dusit, Masahiro DEGUCHI, Toshihito ENDO, Wei Guang-Pu, Hiroaki Okamoto, and Yoshihiro HAMAKAWA. "Visible Light a-SiC Multilayered Thin Film LED." In 1986 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1986. http://dx.doi.org/10.7567/ssdm.1986.d-10-4.

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Ikoma, Yoshifumi, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, and Teruaki Motooka. "Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)." In Seventh International Conference on Thin Film Physics and Applications, edited by Junhao Chu and Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888531.

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Yahaya, Hafizal, Yoshifumi Ikoma, Keiji Kuriyama, and Teruaki Motooka. "Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control." In Seventh International Conference on Thin Film Physics and Applications, edited by Junhao Chu and Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888388.

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Ikoma, Yoshifumi, Kenta Ono, Mutsunori Uenuma, Tomohiko Ogata, and Teruaki Motooka. "New approach to formation of nanopore on SOI: SiC/Si heteroepitaxial growth by supersonic jet CVD." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792771.

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Guo, Wensheng, Dan Zhu, and Zhihong Liu. "Spectroellipsometric study of buried SiC layers formed by carbon implantation with a metal vapor vacuum arc ion source." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408323.

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Reports on the topic "SiC thin film"

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Davis, R. F., H. H. Lamb, I. S. Tsong, E. Bauer, and E. Chen. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN, and SiC Thin Films. Fort Belvoir, VA: Defense Technical Information Center, December 1997. http://dx.doi.org/10.21236/ada338206.

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Davis, R. F., H. H. Lamb, and S. T. Tsong. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AIN, GaN and SiC Thin Films. Fort Belvoir, VA: Defense Technical Information Center, June 1998. http://dx.doi.org/10.21236/ada353949.

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Christman. L51577 Prediction of SCC Susceptibility Based on Mechanical Properties of Line Pipe Steels. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), August 1988. http://dx.doi.org/10.55274/r0010278.

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If a relationship between the deformation properties of a line pipe steel and its stress-corrosion cracking resistance can be established, then steels may be selected or designed for improved stress-corrosion resistance, based on their mechanical properties. Benefit: In this research program three line pipe steels, removed from long-term service, were examined to determine if there is a correlation between their mechanical properties and stress-corrosion cracking resistance. The hypothesis was that the steel with the greatest tendency for strain hardening, under cyclic and monotonic stress conditions would also have the highest threshold stress for stress-corrosion crack initiation. This hypothesis was verified by the laboratory experiments, which showed the steel with the greatest tendency for strain hardening to have the highest resistance to stress-corrosion. Two other steels, with distinctly lower resistance to plastic deformation, had lower threshold stresses for stress-corrosion. This observation is consistent with the present concept of stress-corrosion crack growth, which holds that crack tip dissolution, and hence crack propagation, occurs because localized plastic deformation ruptures passive films or prevents film formation resulting in crack growth. Result: The cyclic strain behavior of these three steels is consistent with their monotonic stress-strain curves. Both Steels A and B showed a point of extreme strain as the cyclic stress was increased. Their monotonic stress-strain curves both showed well pronounced yield points above which a considerable strain accompanied a small stress increment (low strain hardening). For both steels the rapid increase in cyclic strain occurred at approximately the elevated temperature yield point (\45 ksi for Steel A
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Shannon. L51584 Effect of Water Chemistry on Internal Corrosion Rates in Offshore Pipelines.pdf. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), March 1988. http://dx.doi.org/10.55274/r0010643.

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This work is an extension of a program reported in 1984 to establish factors which control corrosion of API line pipe in gas containing carbon dioxide and water. In this phase of the program, there were four objectives. One was to establish the temperature of maximum corrosion in the range of 75�, 100� and 175�F at 1000 psi in water saturated with carbon dioxide at partial pressures of 15 and 50 psia. The next was to explore the role of carbon content and microstructure in the steel, iron carbonate film formation, and resulting corrosion rates. The third was to examine the role of pre-existing mill scale and corrosion films on accelerating pitting attack. The final objective was to extend a spread sheet computer model to calculate corrosion rates from field data. Tests were run in a refreshed, recirculating autoclave at a total pressure of 1000 psi in water saturated with CO2 at partial pressures of 15 and 50 psia, and containing bicarbonate ion to adjust the pH either to 5 or 6. Six materials were tested: ASTM-A53B, two lots of API5LX-X52 and three lots of API5LX-X60. Samples were pulled at intervals for weight loss corrosion and to examine the surface films by electron microscope and metallography. After plotting the weight loss results, corrosion rates in mils per year (MPY) were calculated. The microstructure of the metal, the corrosion films of iron carbonate, and the weight loss results were then examined. The corrosion data were incorporated into a spread sheet computer model for users to calculate their own pipe line corrosion rates.
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Radu, Daniela Rodica, Mimi Liu, Po-yu Hwang, Dominik Berg, and Kevin Dobson. High-efficiency Thin-film Fe2SiS4 and Fe2GeS4-based Solar Cells Prepared from Low-Cost Solution Precursors. Final Report. Office of Scientific and Technical Information (OSTI), December 2017. http://dx.doi.org/10.2172/1415038.

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Baete, Christophe. PR-405-173610-R01 Develop New Criteria for DC Stray Current Interference. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), June 2019. http://dx.doi.org/10.55274/r0011602.

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This report refers to the activities performed in the frame of PRCI project on the refinement of the dynamic DC stray current corrosion criteria by applying an advanced DC corrosion prediction model. In order to find realistic stray current interference conditions, an industry survey was performed to retrieve dynamic DC interference signals on real-world pipelines. After analysis of the cases, a simulation matrix was proposed that covers a wide variety of interference conditions. The simulated signals were simplified as squared pulses. The European Standard EN 50162 Protection against corrosion stray current from direct current systems was used a reference for validation. Some other criteria that are currently under investigation have been considered as well. The criteria were validated against simulated corrosion rates. The final goal is achieving a further refinement of the dynamic DC stray current criteria. The simulations demonstrate that current criteria are either not valid, either too conservative when steel tends to passivate under anodic excursions in high pH soil due to the development of a Fe3O4 film. The lowest pH value at which the passive film developed was 10.34 with relatively short cathodic duration (30 sec) and long (50 sec) and strong (-200 mVcse) anodic potential. There is a related webinar.
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Blanco, Roberto, Elena Fernández, Miguel García-Posada, and Sergio Mayordomo. An estimation of the default probabilities of Spanish non-financial corporations and their application to evaluate public policies. Madrid: Banco de España, September 2023. http://dx.doi.org/10.53479/33512.

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We model the one-year ahead probability for default of Spanish non-financial corporations using data for the period 1996-2019. While most previous literature considers that a firm is in default if it files for bankruptcy, we define default as having non-performing loans during at least three months of a given year. This broader definition allows us to predict firms’ financial distress at an earlier stage that cannot generally be observed by researchers, before their financial conditions become too severe and they have to file for bankruptcy or engage in private workouts with their creditors. We estimate, by means of logistic regressions, both a general model that uses all the firms in the sample and six models for different size-sector combinations. The selected explanatory variables are five accounting ratios, which summarise firms’ creditworthiness, and the growth rate of aggregate credit to non-financial corporations, to take into account the role of credit availability in mitigating the risk of default. Finally, we carry out two applications of our prediction models: we construct credit rating transition matrices and evaluate a programme implemented by the Spanish government to provide direct aid to firms severely affected by the COVID-19 crisis.
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Jia, Dan, and Yong-Yi Wang. PR-350-144501-R04 Characterization of Mechanical Properties of Vintage Girth Welds. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), December 2019. http://dx.doi.org/10.55274/r0011635.

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The data generated in this project, in conjunction with the assessment procedures developed under PRCI project SIA-1-7, fill critical gaps in predicting the behavior of vintage girth welds. Cost-effective maintenance decisions can be made when integrity assessment can be performed with high confidence. This report covers the work done over four PRCI funding years. The material property data and flaw characteristics from 19 girth welds for Pipe and Weld Tensile Strengths and Weld Strength Mismatch, Charpy Impact Energy,Flaw Characteristics as Reported by NDE, Observations about NDE, and Performance of Girth Welds from CWT Tests
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Flórez, Luz Adriana, Didier Hermida, and Leonardo Fabio Morales. The Heterogeneous Effect of Minimum Wage on Labor Market Flows in Colombia. Banco de la República Colombia, October 2022. http://dx.doi.org/10.32468/be.1213.

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We provide evidence of the negative effect of the minimum wage on labor market flows, such as job creation, job destruction, hiring, and separations in Colombia. Depicting firms' minimum wage (MW) compliance cost, we find evidence of an adverse effect of increases on MW compliance cost on employment. This negative effect is explained mainly by a reduction in job creation and hiring rate and the rise in job destruction and separations. In contrast to the evidence for developed economies, our results are in line with the predictions of the standard search model. We also explore this differential effect by firm size and age. We found that an increase in the MW compliance cost has relatively critical negative impacts on small and medium-sized firms (with less than 250 employees); and new and young firms (lower than six years old).
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Johan, Johan, Martina Rotolo, Carl-Johan Sommar, Yiran Li, Catalina Turcu, Bingqin Li, Young-hwan Byun, Jiwei Qian, Marc Flores Soler, and Nick Trebbien. Technological and social adaptation to COVID-19: Food for Vulnerable Urban Groups in Six Global Cities. Linköping University Electronic Press, March 2023. http://dx.doi.org/10.3384/9789180750578.

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This report outlines the results from the research project Food for Urban Life and Localities (FULL) funded by Formas (2020-02864). The research set out to learn how COVID-19 response strategies in six cities (Stockholm, London, Wuhan, Singapore, Sydney, and Seoul) have facilitated access to food for vulnerable groups and how new food supply solutions have emerged through social and technological innovations. This report presents the case of each city in turn and pauses on the role of community-based organisations, ad- hoc community initiatives and municipalities during the COVID-19 pandemic. The report provides a detailed discussion of local or community-level responses in cities that aim to provide access to food through social and/or technological innovations. The lessons learned are important for the Swedish context in the case of similar events that challenge local access to food. The research collected data through qualitative and quantitative methods, and also made use of the breadth of online data sources in response to COVID-19 restrictions on free movement and travelling. The overall finding is that in situations such as the COVID-19 pandemic, local access to food is extremely challenging and cannot be addressed by existing welfare or state arrangements only;civil society organisations and voluntary community organizations (VCOs) step in to fill the gap in public provision; and the stricter the lockdown, the more dependent on civil society response urban areas and communities were.
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