Journal articles: 'SiC power MOSFET'

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Lichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen, and John W. Palmour. "Performance and Reliability of SiC Power MOSFETs." MRS Advances 1, no. 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.

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ABSTRACTDue to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings, and with lower switching losses. Silicon carbide power MOSFET development has progressed rapidly since the market release of Cree’s 1200V 4H-SiC power MOSFET in 2011. This is due to continued advancements in SiC substrate quality, epitaxial growth capabilities, and device processing. For example, high-quality epitaxial growth of thick, low-doped SiC has enabled the fabrication of SiC MOSFETs capable of blocking extremely high voltages (up to 15kV); while dopant control for thin highly-doped epitaxial layers has helped enable low on-resistance 900V SiC MOSFET production. Device design and processing improvements have resulted in lower MOSFET specific on-resistance for each successive device generation. SiC MOSFETs have been shown to have a long device lifetime, based on the results of accelerated lifetime testing, such as high-temperature reverse-bias (HTRB) stress and time-dependent dielectric breakdown (TDDB).

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Li, Ruizhe. "The advantages and short circuit characteristics of SiC MOSFETs." Applied and Computational Engineering 49, no. 1 (March 22, 2024): 58–64. http://dx.doi.org/10.54254/2755-2721/49/20241059.

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SiC MOSFETs have exhibited considerable benefits in high-frequency, high-voltage, and high-temperature power electronics applications with outstanding material attributes as a result of the rapid advancement of power electronics technology. SiC MOSFETs slower short-circuit tolerance and faster switching rates provide new issues for the short-circuit prevention technology. In the opening section of the study, Si and SiC MOSFETs are compared and evaluated using various models and parametric factors. It has been demonstrated that SiC MOSFETs outperform Si MOSFETs in a variety of conditions and applications. The many SiC MOSFET short-circuit failure types as well as their underlying theories are initially explained in the papers main body. In addition, it examines the fundamentals of short-circuit test procedures and SiC MOSFET test circuits. The issues and limitations of the currently available SiC MOSFET short-circuit protection technology are then explored, along with factors impacting the short-circuit of SiC MOSFETs that are thoroughly examined. Lastly, the SiC MOSFET short-circuit protection technology development trend is forecasted, and potential future areas for improvement and innovation are considered. SiC MOSFET short-circuit protection technology will be enhanced and optimized to satisfy the needs of efficient and dependable power electronic systems as technology advances and application requirements expand.

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Hsu, Fu Jen, Cheng Tyng Yen, Hsiang Ting Hung, Jia Wei Hu, and Chih Fang Huang. "High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow V<sub>GS(on)</sub>." Key Engineering Materials 948 (June 6, 2023): 89–93. http://dx.doi.org/10.4028/p-tuypqj.

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SiC MOSFETs are rarely used in low-power consumer applications because of their cost and gate driving circuitry requirement. In this work, a cost-efficient SiC MOSFET with a usable 10V of VGS is proposed. The proposed SiC MOSFET could enable low-power applications, which is around tens to hundreds of watt, to implement SiC MOSFETs. As a result, the thermal performance is better than the GaN solution thanks to the better thermal conductance of the SiC.

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Funaki, Tsuyoshi, Yuki Nakano, and Takashi Nakamura. "Comparative Study of SiC MOSFETs in High Voltage Switching Operation." Materials Science Forum 717-720 (May 2012): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1081.

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SiC power device is expected to have high breakdown voltage with low on resistance, which cannot be attainable for conventional Si device. This study evaluates the switching performance of high voltage SiC MOSFETs with comparing to that of conventional Si power MOSFET having equivalent breakdown voltage. To this end, turn-on and turn-off switching operation of MOSFETs are assessed with resistive load for same conduction current density. Though the on resistance of SiC MOSFETs are quite lower than Si MOSFET, especially for trench gate type. But, SiC MOSFETs have larger terminal capacitance. Therefore, SiC MOSFETs show slower switching speed than Si MOSFETs for same current density condition.

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Kong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang, and Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance." Journal of Semiconductors 44, no. 5 (May 1, 2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.

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Abstract A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode (Hk-SJ-SBD MOSFET) is proposed, and has been compared with the SiC high-k MOSFET (Hk MOSFET), SiC superjuction MOSFET (SJ MOSFET) and the conventional SiC MOSFET in this article. In the proposed SiC Hk-SJ-SBD MOSFET, under the combined action of the p-type region and the Hk dielectric layer in the drift region, the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance (R on,sp). The integrated Schottky barrier diode (SBD) also greatly improves the reverse recovery performance of the device. TCAD simulation results indicate that the R on,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm2 with a 2240 V breakdown voltage (BV), which is more than 72.4%, 23%, 5.6% lower than that of the conventional SiC MOSFET, Hk SiC MOSFET and SJ SiC MOSFET with the 1950, 2220, and 2220 V BV, respectively. The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC, which are greatly reduced by more than 74% and 94% in comparison with those of all the conventional SiC MOSFET, Hk SiC MOSFET and SJ SiC MOSFET, due to the integrated SBD in the proposed MOSFET. And the trade-off relationship between the R on,sp and the BV is also significantly improved compared with that of the conventional MOSFET, Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature, respectively. In addition, compared with conventional SJ SiC MOSFET, the proposed SiC MOSFET has better immunity to charge imbalance, which may bring great application prospects.

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van Zeghbroeck, Bart, and Hamid Fardi. "Comparison of 3C-SiC and 4H-SiC Power MOSFETs." Materials Science Forum 924 (June 2018): 774–77. http://dx.doi.org/10.4028/www.scientific.net/msf.924.774.

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A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation. This includes the bulk mobility as a function of doping density, the breakdown field as a function of doping and the MOSFET channel mobility. A device model was constructed and then used to calculate the on-resistance and breakdown voltage of a properly scaled device as a function of the doping density of the blocking layer. A SPICE model was constructed to explore the switching transients and switching losses. The simulations indicate that, for the chosen material parameters, a 600 V 3C-SiC MOSFET has an on-resistance, which is less than half that of a 4H-SiC MOSFET as are the switching losses in the device.

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Qiu, Guoqing, Kedi Jiang, Shengyou Xu, Xin Yang, and Wei Wang. "Modeling and analysis of the characteristics of SiC MOSFET." Journal of Physics: Conference Series 2125, no. 1 (November 1, 2021): 012051. http://dx.doi.org/10.1088/1742-6596/2125/1/012051.

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Abstract Although the superior performance of SiC MOSFET devices has beenvalidated by many studies, it is necessary to overcome many technical bottlenecks to make SiC MOSFET gradually replace Si-based power devices into the mainstream. In view of the current situation where the performance of SiC MOSFETs in power conversion devices cannot be evaluated well at this stage, it is necessary to carry out fine modeling of SiC MOSFETs and establish accurate simulation models. In this paper, the powerful mathematical processing capability and rich modules of Matlab/Simulink are used to build a SiC MOSFET model, and then the product data sheet is compared with the fitted data. The results show that the switching simulation waveforms are in general agreement with the data sheet waveforms, and the error is less than 7%. Verifing the accuracy of the model and reducing the difficulty of modeling, it provides a new idea for establishing the circuit simulation model of SiC MOSFET in Matlab/Simulink.

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Matocha, Kevin, Peter A. Losee, Arun Gowda, Eladio Delgado, Greg Dunne, Richard Beaupre, and Ljubisa Stevanovic. "Performance and Reliability of SiC MOSFETs for High-Current Power Modules." Materials Science Forum 645-648 (April 2010): 1123–26. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1123.

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We address the two critical challenges that currently limit the applicability of SiC MOSFETs in commercial power conversion systems: high-temperature gate oxide reliability and high total current rating. We demonstrate SiC MOSFETs with predicted gate oxide reliability of >106 hours (100 years) operating at a gate oxide electric field of 4 MV/cm at 250°C. To scale to high total currents, we develop the Power Overlay planar packaging technique to demonstrate SiC MOSFET power modules with total on-resistance as low as 7.5 m. We scale single die SiC MOSFETs to high currents, demonstrating a large area SiC MOSFET (4.5mm x 4.5 mm) with a total on-resistance of 30 m, specific on-resistance of 5 m-cm2 and blocking voltage of 1400V.

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Green, Ronald, Aivars J. Lelis, and Daniel B. Habersat. "Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing." Materials Science Forum 717-720 (May 2012): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1085.

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Threshold voltage (VT) instability remains an important issue for the performance, reliability, and qualification of SiC power MOSFET devices. The direct application of existing reliability test standards to SiC power MOSFETs can in some cases result in an inconsistent pass/fail response for a given device. To ensure SiC MOSFET device reliability, some modifications to existing test methods may be necessary..

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Han, Ki Jeong, B. Jayant Baliga, and Woong Je Sung. "1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results." Materials Science Forum 924 (June 2018): 684–88. http://dx.doi.org/10.4028/www.scientific.net/msf.924.684.

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This paper presents a 1.2kV-rated 4H-SiC Split-Gate power MOSFET (SG-MOSFET) with superior high frequency figures-of-merit (HF-FOM). Electrical characteristics including reverse transfer capacitance and gate-to-drain charge are measured from fabricated devices on a 6-inch SiC wafer, demonstrating excellent performance. Compared to the conventional MOSFETs, the SG-MOSFET provides about 7x smaller HF-FOM [RonxCgd] and 2x smaller HF-FOM [RonxQgd] with improved reverse transfer capacitance and gate-to-drain charge.

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Langpoklakpam, Catherine, An-Chen Liu, Kuo-Hsiung Chu, Lung-Hsing Hsu, Wen-Chung Lee, Shih-Chen Chen, Chia-Wei Sun, Min-Hsiung Shih, Kung-Yen Lee, and Hao-Chung Kuo. "Review of Silicon Carbide Processing for Power MOSFET." Crystals 12, no. 2 (February 11, 2022): 245. http://dx.doi.org/10.3390/cryst12020245.

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Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

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Xu, Yige. "Applications and challenges of Silicon Carbide (SiC) MOSFET technology in electric vehicle propulsion systems: A review." Applied and Computational Engineering 40, no. 1 (February 21, 2024): 180–86. http://dx.doi.org/10.54254/2755-2721/40/20230647.

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Silicon Carbide (SiC) MOSFET technology plays a pivotal role in the drive systems of electric vehicles (EVs), offering key applications and facing significant challenges. This paper provides an overview of the fundamental principles and characteristics of SiC MOSFETs, highlighting the unique properties of SiC materials. It delves into the critical applications of SiC MOSFETs in electric vehicle drive systems, including motor drives and inverters, and analyzes the advantages of using SiC MOSFETs for efficient energy conversion at high temperatures. The paper also discusses the key challenges faced by SiC MOSFET technology, such as stability issues under high-temperature environments, avalanche breakdown and tolerance issues affecting power supply reliability, and manufacturing cost and consistency issues that limit widespread application. Innovative solutions to these challenges are explored, including strategies for improving stability under high temperatures, techniques for suppressing avalanche effects and enhancing power supply reliability, and innovations in manufacturing processes to reduce costs and improve consistency. The paper concludes by summarizing the crucial role of SiC MOSFET technology in electric vehicle drive systems, emphasizing the importance of innovative solutions to address its challenges, and looking forward to its continued contribution to technological advancements in the field of electric vehicles.

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Yang, Dong, Stephan Wirths, Lars Knoll, Yi Han, Dan Mihai Buca, and Qing Tai Zhao. "Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs." Key Engineering Materials 945 (May 19, 2023): 77–82. http://dx.doi.org/10.4028/p-0ta22r.

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SiC gate-all-around (GAA) nanowire (NW) MOSFET is one of the most promising device architectures for the next generation of SiC power MOSFETs. This work reveals the great application potential of vertical SiC GAA NW power MOSFETs via TCAD simulation. The investigated devices show higher channel electron mobility (µch) and larger channel carrier density (nch) compared to the conventional SiC power MOSFET. Scaling down of NW diameter (DNW) is beneficial in terms of both, lowering channel resistance (Rch) via improving nch and, increasing breakdown voltage (Vb) by modifying electric field distribution. Low specific-on resistance (Ron,sp) of about 0.68 mΩ∙cm2 for 1 kV SiC MOSFET is shown as possible. However, scaling down the DNW below 100 nm causes an undesirable increase in Ron,sp due to the unscalable device area which is limited by the vertical gate wrapping stacks. The study on device scaling where the NW diameter (DNW) varies from 500 nm to 25 nm provides valuable design considerations for the device's performance. Finally, a top-down process has been developed for the device fabrication. Vertical SiC NWs with an aspect ratio of 10 are formed by an optimized micro-trench free dry etching process.

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Müting, Johanna, Bhagyalakshmi Kakarla, and Ulrike Grossner. "Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD." Materials Science Forum 897 (May 2017): 553–56. http://dx.doi.org/10.4028/www.scientific.net/msf.897.553.

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The main scattering mechanisms reducing the channel mobility and thus the typical performance of a SiC power MOSFET are reviewed. It is demonstrated that the Poisson equation within the drift-diffusion model is able to account for the effects of ionized impurity scattering. Furthermore, a correlation between the size of macro-or nanosteps at the SiC/SiO2 interface and the corresponding fitting parameter within the Lombardi surface roughness model is established. By qualitatively reproducing the typical performance of a commercial SiC power MOSFET a baseline for the TCAD modeling of power MOSFETs is provided.

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Lichtenwalner, Daniel J., Akin Akturk, James McGarrity, Jim Richmond, Thomas Barbieri, Brett Hull, Dave Grider, Scott Allen, and John W. Palmour. "Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout." Materials Science Forum 924 (June 2018): 559–62. http://dx.doi.org/10.4028/www.scientific.net/msf.924.559.

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High-energy neutrons produced by cosmic ray interactions with our atmosphere are known to cause single-event burnout (SEB) failure in power devices operating at high fields. We have performed accelerated high-energy neutron SEB testing of SiC and Si power devices at the Los Alamos Neutron Science Center (LANCSE). Comparing Wolfspeed SiC MOSFETs having different voltage (900V – 3300V) and current (3.5A – 72A) ratings, we find a universal behavior when scaling failure rates by active area, and scaling drain bias by avalanche voltage. Moreover, diodes and MOSFETs behave similarly, revealing that the SiC drift dominates the failure characteristics for both device types. This universal scaling holds for SiC MOSFETs from other manufacturers as well. The SEB characteristics of Si power IGBT and MOSFET devices show that near their rated voltages failure rates of Si devices can be 10X higher than that of comparable SiC MOSFET devices. Thus, Si devices are more susceptible to SEB failure from voltage overshoot conditions.

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Kampitsis, Georgios E., Stavros A. Papathanassiou, and Stefanos N. Manias. "Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits." Materials Science Forum 856 (May 2016): 362–67. http://dx.doi.org/10.4028/www.scientific.net/msf.856.362.

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In this paper, the performance of silicon (Si) and silicon carbide (SiC) power MOSFETs during short circuits is investigated. The response of both semiconductors is examined under hard switch fault and fault under load conditions using a short circuit tester board. In addition, their failure mechanism is recorded and analyzed. Examination results show that the SiC MOSFET fails in the energy limiting mode, due to gate oxide rupture, while the Si MOSFET is destructed during the power limiting mode, at the beginning of the fault. The electro-thermal characterization of these devices is performed through three-dimensional finite element analysis, utilizing the experimentally extracted power dissipation for each transistor. Simulation results confirm the exceptional ruggedness that SiC power MOSFETs exhibit outside their safe operating area.

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Grome, Christopher A., and Wei Ji. "A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs." Electronics 13, no. 8 (April 9, 2024): 1414. http://dx.doi.org/10.3390/electronics13081414.

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Radiation hardening of power MOSFETs (metal oxide semiconductor field effect transistors) is of the highest priority for sustaining high-power systems in the space radiation environment. Silicon carbide (SiC)-based power electronics are being investigated as a strong alternative for high power spaceborne power electronic systems. SiC MOSFETs have been shown to be most prone to single-event burnout (SEB) from space radiation. The current knowledge of SiC MOSFET device degradation and failure mechanisms are reviewed in this paper. Additionally, the viability of radiation tolerant SiC MOSFET designs and the modeling methods of SEB phenomena are evaluated. A merit system is proposed to consider the performance of radiation tolerance and nominal electrical performance. Criteria needed for high-fidelity SEB simulations are also reviewed. This paper stands as a necessary analytical review to intercede the development of radiation-hardened power devices for space and extreme environment applications.

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Xie, Li Jun, Jin Yuan Li, and Kun Shan Yu. "Study on Loss Calculation for Inverter Based on 1200V SiC MOSFET." Applied Mechanics and Materials 672-674 (October 2014): 906–13. http://dx.doi.org/10.4028/www.scientific.net/amm.672-674.906.

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SiC MOSFETs are expected as one of next generation power devices for their superior performances compared with conventional Si power devices and have become one of the new promising substitude to Si devices. The characteristics of 1200V SiC MOSFET are presented first and the power losses analysis model of SiC devices are given. As losses of power devices are essential parameters in converter design, the power dissipation of SiC MOSFET in SPWM inverter are calculated. In this paper, whether a free-wheeling-diode necessary is illustrated from the point of power dissipation and choice is made based on the power loss. According to the analysis result, the inverter without SBD shows less power losses, which can reduce the cost and volume of inverter.

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Che, Haoming. "Simulation study on dynamic characteristics of SiC MOSFET." Theoretical and Natural Science 5, no. 1 (May 25, 2023): 805–14. http://dx.doi.org/10.54254/2753-8818/5/20230507.

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In this paper, the third generation power MOSFET is introduced, and the physical model based on silicon based MOSFET is improved for SiC MOSFET, and the commercial planar gate and trench gate 1.2kV SiC MOSFET are simulated. The accuracy of physical modals is tested by comparing the static characteristics with commercial ones. The dynamic characteristics of two MOSFETs are simulated by inductively clamped double pulse circuit, and the circuit parameters are analyzed according to the static characteristics of the devices. The switching loss of the two MOSFETs is calculated and compared by using TCAD software. In the two devices with the same volume, the trench gate structure has the larger switching loss.

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Devadas, Shree Chakravarthy, and Ramani Kannan. "COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs." Platform : A Journal of Engineering 5, no. 2 (June 30, 2021): 23. http://dx.doi.org/10.61762/pajevol5iss2art12810.

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The performance of power MOSFET is affected by high thermal stress exposure. A high level of thermal stress is induced when the MOSFET experiences a temperature change. This finding is about the bonding wire lift-off on the solder pad. The MOSFET model is designed with the heatsink to ensure accurate results are obtained in this research work. The key intention of this research is to investigate the condition of silicon and silicon carbide power MOSFETs during thermal stress. The thermal properties of silicon and silicon carbide MOSFET were investigated by developing a 3D modal and thermal stress simulation in the COMSOL Multiphysics software. Thermal resistance was calculated by randomly selecting a power loss value of 100 Watts. Junction temperature for silicon and silicon carbide MOSFET was taken from several articles mentioned in the results and discussion. Keywords: Thermal stress, bonding wire lift-off, temperature change, MOSFET

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Umegami, Hirokatsu, Toshikazu Harada, and Ken Nakahara. "Performance Comparison of Si IGBT and SiC MOSFET Power Module Driving IPMSM or IM under WLTC." World Electric Vehicle Journal 14, no. 4 (April 17, 2023): 112. http://dx.doi.org/10.3390/wevj14040112.

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The cumulative inverter losses and power consumption of a silicon insulated gate bipolar transistor (Si IGBT) and three types of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were evaluated on an electric motor test bench under a worldwide harmonized light vehicles test cycle (WLTC). SiC MOSFETs showed higher performance than Si IGBT regardless of the motor type and test vehicles. In the case of driving an interior permanent magnet synchronous motor (IPMSM), the latest 4th generation SiC MOSFET (SiC-4G) in ROHM has the lowest inverter loss and energy consumption compared with the other generations. In the case of driving an induction motor (IM), on the other hand, the 2nd generation SiC MOSFET (SiC-2G) in ROHM has the best energy consumption despite the fact that the inverter losses of SiC-2G are slightly larger than the loss of SiC-4G. The latest or later generation power device does not necessarily contribute to better performance in a total system by simply replacing early power devices.

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Sato, Shinji, Fumiki Kato, Hidekazu Tanisawa, Kenichi Koui, Kinuyo Watanabe, Yoshinori Murakami, Yusuke Kobayashi, Hiroshi Sato, Hiroshi Yamaguchi, and Shinsuke Harada. "Development of a High-Speed Switching Silicon Carbide Power Module." Materials Science Forum 963 (July 2019): 864–68. http://dx.doi.org/10.4028/www.scientific.net/msf.963.864.

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We developed a silicon carbide (SiC) power module that can switch large currents at high speed. The withstand voltage of this power module is 1200 V, and two SiC MOSFETs are built-in and constitute a circuit for one inverter phase. This power module incorporates a snubber circuit for reducing the surge voltage generated by the SiC MOSFET for high-speed switching. In this study, switching at 270 A (a current density of 1000 A/cm 2 or more for the SiC MOSFET) was performed to evaluate this module. The turn-off switching time tf was ~10 ns, and the maximum dv/dt was 80 kV/us. Furthermore, this research examines the design and performance of the proposed power module.

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Hebali, Mourad, Menaouer Bennaoum, Mohammed Berka, Abdelkader Baghdad Bey, Mohammed Benzohra, Djilali Chalabi, and Abdelkader Saidane. "A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model." Journal of Electrical Engineering 70, no. 2 (April 1, 2019): 145–51. http://dx.doi.org/10.2478/jee-2019-0021.

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Abstract In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the I–V and gm–V characteristics and subthreshold operation of the DGMOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the single gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low power for both models like the SG-MOSFET transistor, especially the series DG-MOSFET transistor is characterized by an ultra low power. The different transistors are characterized by an ultra low OFF leakage current of pA order, very high ON/OFF ratio of and high subthreshold slope of order 0.1 V/dec for the transistors in 6H-SiC and 4H-SiC respectively. These transistors also proved higher transconductance efficiency, especially the parallel DG-MOSFET transistor.

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Kannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong, and Taib B. Ibrahim. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 2 (April 1, 2019): 1453. http://dx.doi.org/10.11591/ijece.v9i2.pp1453-1460.

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Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect mechanism that creates defects by generation of excessive electron–hole pairs causing electrical characteristics shifts. This study investigates the impact of gamma ray irradiation on dynamic characteristics of silicon and silicon carbide power MOSFET. The switching speed is limit at the higher doses due to the increase capacitance in power MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing or decreasing capacitances in power MOSFETs. These defects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-voltage characteristics, results were analyzed and plotted for the both silicon and silicon carbide power MOSFET.

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Ataseven, Ismail, Ilker Sahin, and Salih Baris Ozturk. "Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar." Energies 16, no. 6 (March 21, 2023): 2903. http://dx.doi.org/10.3390/en16062903.

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Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages compared to silicon (Si) MOSFETs: low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency. As a result, Si MOSFETs are replaced with SiC MOSFETs in many industrial applications. However, there are still not as many SiC modules to customize for each application. To meet the high-power requirement for custom applications, paralleling discrete SiC MOSFETs is an essential solution. However, it comes with many technical challenges; inequality in current sharing, different switching losses, different transient characteristics, and so forth. In this paper, the detailed MATLAB®/Simulink® Simpscape model of the SiC MOSFET from the datasheet and the simulation of the half-bridge circuit are investigated. Furthermore, this paper proposes the implementation of the four-paralleled SiC MOSFET half-bridge circuit with an improved symmetric gate driver layout. Moreover, a unique laminated busbar connected directly to the printed circuit board (PCB) is proposed to increase current and thermal capacity and decrease parasitic effects. Finally, the experimental and simulation results are presented using a 650 V SiC MOSFET (CREE) double-pulse test (DPT) circuit. The voltage overshoot problems and applied solutions are also presented.

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Li, Jinyuan, Meiting Cui, Yujie Du, Junji Ke, and Zhibin Zhao. "Influence of Parasitic Inductances on Switching Performance of SiC MOSFET." E3S Web of Conferences 64 (2018): 04005. http://dx.doi.org/10.1051/e3sconf/20186404005.

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Compared to the silicon power devices, silicon carbide device has shorter switch time. Hence, as a result of the faster transition of voltage (dv/dt) and current (di/dt) in SiC MOSFET, the influence of parasitic parameters on SiC MOSFET’s switching transient is more serious. This paper gives an experimental study of the influence of parasitic inductance on SiC MOSFET’s switching characteristics. Most significance parameters are the parasitic inductances of gate driver loop and power switching loop. These include the SiC MOSFET package’s parasitic inductance, interconnect inductance and the parasitic inductance of dc link PCB trace. This paper therefore focuses on analysis and comparison of different parasitic parameters under various operation conditions in terms of their effect on overvoltage, overcurrent and switching power loss.

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Zhang, Liqi, Suxuan Guo, Pengkun Liu, and Alex Q. Huang. "Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000247–51. http://dx.doi.org/10.4071/isom-2017-wa35_023.

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Abstract SiC MOSFET-gate driver integrated power module is proposed to provide ultra-low stray inductance compared to traditional TO-247 or TO-220 packages. Kelvin connection eliminates the common source stray inductance and zero external gate resistor enables faster switching. This module can be operated at MHz switching frequency for high power applications with lower switching losses than discrete packages. Two different gate drivers and two different SiC MOSFETs are grouped and integrated into three integrated power modules. Comparative evaluation and analysis of gate driver impacts on switching speed of SiC MOSFET is shown in detail. The paper provides an insight of the gate driver impacts on the device switching performance in an integrated power module.

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Race, Salvatore, Ivana Kovacevic-Badstubner, Roger Stark, Alexander Tsibizov, Manuel Belanche, Yulieth Arango, Gianpaolo Romano, Lars Knoll, and Ulrike Grossner. "Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs." Materials Science Forum 1091 (June 5, 2023): 67–71. http://dx.doi.org/10.4028/p-2388hx.

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In this work, the improvement of SiC power MOSFET performance achieved using high-κ gate-dielectrics instead of the standard SiO2 is investigated by means of advanced gate-impedance characterization. The benefit of using high-κ gate-dielectrics with high dielectric constant is demonstrated by comparing SiC MOSFETs with pure high-κ, a stack of SiO2/high-κ, as well as pure SiO2. Namely, the fabricated high-κ SiC MOSFETs show a superior performance to commercial SiC MOSFETs with SiO2/SiC interface with respect to channel resistance and interface quality. The proposed characterization approach is non-destructive and applicable to packaged power devices.

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Zhu, Tianle. "Study on switching behavior of silicon carbide MOSFET by gate driver." Highlights in Science, Engineering and Technology 56 (July 14, 2023): 506–19. http://dx.doi.org/10.54097/hset.v56i.10720.

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Compared with IGBT, SiC MOSFET has improved frequency efficiency, outstanding reliability which not only can achieve energy saving and loss reduction, but also increase power density and other characteristics. SiC MOSFETs are faced with countless challenges in practice because of their superior switching speed. The gate driver was adjusted in this paper to investigate the switching behavior of silicon carbide MOSFET. The switching behavior of silicon carbide devices was first characterized by simulation software using a double- pulse test bench. Different parasitic inductances, resistances and additional parameters were found to have significant impacts on SiC MOSFET switching behavior. The results are analysed after combination and comparison.

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Prado, Edemar O., Pedro C. Bolsi, Hamiltom C. Sartori, and José R. Pinheiro. "An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications." Energies 15, no. 14 (July 20, 2022): 5244. http://dx.doi.org/10.3390/en15145244.

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This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with 91 power MOSFETs from different manufacturers was built. MOSFET losses are related to individual characteristics of the technology: drain-source on-state resistance, input capacitance, Miller capacitance and internal gate resistance. The total losses are evaluated considering a drain-source voltage of 400 V, power levels from 1 kW to 16 kW (1 A–40 A) and frequencies from 1 kHz to 500 kHz. A methodology for selecting power MOSFETs in power electronics applications is also presented.

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Imaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami, and Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." Materials Science Forum 527-529 (October 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.

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Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which induce power losses, are suppressed markedly compared with conventional Si-IGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt ~250A/μs). The three losses of SiC modules decrease monotonically with a decrease in gate resistance, namely switching speed. The result shows the potential of unipolar device SiC power modules.

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Zhu, Shengnan, Tianshi Liu, Junchong Fan, Arash Salemi, Marvin H. White, David Sheridan, and Anant K. Agarwal. "A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching." Materials 15, no. 19 (September 27, 2022): 6690. http://dx.doi.org/10.3390/ma15196690.

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A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance (Cgd) and reduce the specific ON-resistance (Ron,sp) of 4H-SiC planar power MOSFETs. The Dod and the octagonal (Oct) cells are used in the layout design of the 650 V SiC MOSFETs in this work. The experimental results confirm that the Dod-cell MOSFET achieves a 2.2× lower Ron,sp, 2.1× smaller high-frequency figure of merit (HF-FOM), higher turn on/off dv/dt, and 29% less switching loss than the fabricated Oct-cell MOSFET. The results demonstrate that the Dod cell is an attractive candidate for high-frequency power applications.

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Vobecký, Jan. "The current status of power semiconductors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.

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Trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. Well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like MOSFET, IGBT, IGCT and PCT. Silicon carbide (SiC) and gallium nitride (GaN) are striving to take over that of the silicon. The most relevant SiC device is the MPS (JBS) diode, followed by MOSFET and JFET. GaN devices are represented by lateral HEMT. While the long term reliability of silicon devices is well trusted, the SiC MOSFETs and GaN HEMTs are struggling to achieve a similar confidence. Two order higher cost of SiC equivalent functional performance at device level limits their application to specific cases, but their number is growing. Next five years will therefore see the co-existence of these technologies. Silicon will continue to occupy most of applications and dominate the high-power sector. The wide bandgap devices will expand mainly in the 600 - 1200 V range and dominate the research regardless of the voltage class.

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Matocha, Kevin, Sujit Banerjee, and Kiran Chatty. "Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers." Materials Science Forum 858 (May 2016): 803–6. http://dx.doi.org/10.4028/www.scientific.net/msf.858.803.

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An advanced silicon carbide power MOSFET process was developed and implemented on a high-volume 150mm silicon production line. SiC power MOSFETs fabricated on this 150mm silicon production line were demonstrated with blocking voltage of 1700V with VGS=0V. These SiC MOSFETs have a specific on-resistance as low as 3.1 mΩ-cm2 at room temperature, increasing to 6.7 mΩ-cm2 at 175°C. Devices were packaged in TO-247 package and measured to have on-resistance of 45 mΩ with VGS=20V at room temperature. Clamped inductive switching characterization of these SiC MOSFETs shows turn-off losses as low as 110 uJ (700V, 19.5A). The high-temperature gate bias stability was characterized at positive (+20) and negative gate bias (-10V) at 175°C. After 750 hours of gate stress at a gate bias of VGS=+20V and 175°C, we observe less than a 250mV shift in the threshold voltage. After 750 hours of stress at VGS=-10V and 175°C, we characterize a threshold voltage shift less than 100mV. This shows promise for high-volume production of reliable SiC MOSFETs on 150mm wafers.

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An, Yiping, Yifan Wang, Yujin Wu, and Jiazhen Yang. "Conduction Mechanism and Influencing Factors of SiC MOSFET." Journal of Physics: Conference Series 2435, no. 1 (February 1, 2023): 012021. http://dx.doi.org/10.1088/1742-6596/2435/1/012021.

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Abstract With the rapid development of the microelectronics industry, power semiconductor devices are getting more and more attention from the industry. At the same time, discussions on the application of power semiconductor materials have never stopped. Over the years, SiC material has stood out because of its superior physical characteristics. Compared with traditional Si MOSFET technology, SiC MOSFET technology has better physical characteristics in some aspects and has a broader market prospect. This paper introduces the conduction mechanism of SiC MOSFET and its performance factors, and the volume effect, bias temperature instability, and threshold voltage drift of SiC MOSFET are discussed. This paper is helpful in understanding the broad application prospects of SiC MOSFET technology and the difference and reform between SiC MOSFET and traditional Si MOSFET.

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Luo, Qixiao. "Research on the advantages and development status of new material MOSFET." Highlights in Science, Engineering and Technology 33 (February 21, 2023): 210–18. http://dx.doi.org/10.54097/hset.v33i.5313.

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When using MOSFETs, in order to improve the operating speed, so that higher power density and lower functional consumption can be obtained in the process, researchers have explored in multiple dimensions. In this paper, three popular new material MOSFETs are mainly explained, including SiC MOSFET, GaN MOSFET and graphene MOSFET. This paper introduces their advantages and their development status, so as to compare the advantages of new materials. In conclusion, By adding materials, the electron mobility and stability of the FET can be increased in some situation. The research in this paper will undoubtedly promote the further development of MOSFET.

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Okabe, Hiroaki, Motoru Yoshida, Takaaki Tominaga, Jun Fujita, Kazuyo Endo, Yoshinori Yokoyama, Kazuyasu Nishikawa, Yoshihiko Toyoda, and Satoshi Yamakawa. "High Temperature Reliability of the SiC-MOSFET with Copper Metallization." Materials Science Forum 778-780 (February 2014): 955–58. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.955.

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We investigated the SiC-MOSFET with Cu metallization instead of conventional Al metallization to apply to high reliability power modules. As Cu has higher electrical and thermal conductivity, yield strength, and tolerance of its migration than those of Al, applying Cu to metallization and wire bonds will lead to longer lifetime for power modules. One of the major difficulties with Cu metallization is its high diffusivity into SiO2 and poly-Si which are used as gate oxide, interlayer oxide, and gate electrodes in SiC-MOSFETs, resulting in degradation of devices. We fabricated the SiC-MOSFET with Cu metallization and a diffusion barrier. We have successfully obtained good characteristics same as conventional Al metallization and demonstrated its high temperature reliability.

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38

Peters, Dethard, Reinhold Schörner, Peter Friedrichs, and Dietrich Stephani. "SiC Power MOSFETs – Status, Trends and Challenges." Materials Science Forum 527-529 (October 2006): 1255–60. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1255.

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SiC power MOSFETs are attractive electronic power switches for innovative power supply and motor drive solutions. The paper discusses this statement and specifies market segments offering the best chances for a commercialization. Due to well-known difficulties in achieving adequate channel conductivity, a lot of SiC-MOSFET publications focus on the channel mobility. However, for a power MOSFET this is only one important parameter affecting the performance. Other characteristics have to be considered too for an honest evaluation: transfer characteristics and blocking capability over the standard operation temperature range, handling of gate oxide stress and related reliability issues, capability of paralleling, dynamic stability, body diode characteristics, reproducibility of the fabrication process and device size. Various attempts have been made in recent years in order to address these features. Approaches differ in the use of different crystal orientations and polytypes, accumulation or inversion channel, implanted or epitaxially grown channels and novel oxidation techniques. Worldwide a trend to the planar DIMOS concept can be observed. Our present results are shown for a power SiC MOSFET designed for 10 A / 1200 V. Key data are a specific on-resistance of 12 m1cm2, the desired low but positive increase of the onresistance with temperature, static avalanche (20 mA DC @1574 V), short-circuit stability at 600 V for 20 9s and robust switching behavior.

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Matacena, Ilaria, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio, and Santolo Daliento. "Evaluation of Interface Traps Type, Energy Level and Density of SiC MOSFETs by Means of C-V Curves TCAD Simulations." Materials Science Forum 1004 (July 2020): 608–13. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.608.

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SiC MOSFETs are promising devices for many power applications. They are replacing Si devices due to the higher performance of SiC material. However, there are some technological issues still unsolved. One of the main problems is the high density of traps at the SiC/SiO2 interface. Traps distribution at such interface is complex and it affects the overall performance of the device. Traps influence both current-voltage and capacitance-voltage characteristics of a SiC MOSFET. The aim of this work is the study of interface traps effects on C-V and I-V curves for a 1200 V SiC MOSFET. The numerical study is adopted to explain the shape of experimental C-V curves of commercial devices.

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Harada, Shinsuke, Makoto Kato, Tsutomu Yatsuo, Kenji Fukuda, and Kazuo Arai. "Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face." Materials Science Forum 600-603 (September 2008): 675–78. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.675.

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4H-SiC MOSFET on carbon face exhibits the high channel mobility when the gate oxide is formed by pyrogenic wet oxidation. However, this improvement is not proof against the metallization annealing which is indispensable in the fabrication of the SiC power MOSFETs. We develop the alternative metallization process suitable for the high channel mobility on the carbon face. The metallization annealing in hydrogen ambient has much effect to suppress the degradation of the channel mobility. The lateral MOSFET with the ohmic contact formed by hydrogen annealing exhibits the high channel mobility which is comparable to the channel mobility of the lateral MOSFET formed without metallization annealing.

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Zhang, Q. J., G. Wang, Charlotte Jonas, Craig Capell, Steve Pickle, P. Butler, Daniel J. Lichtenwalner, et al. "Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed." Materials Science Forum 897 (May 2017): 521–24. http://dx.doi.org/10.4028/www.scientific.net/msf.897.521.

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Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage applications. 1700 V SiC MOSFETs have already been released to production at Wolfspeed based on its 2nd Gen technology. In this paper, we present our latest results in high voltage 4H-SiC MOSFET development. A low specific on-resistance of 4.7 mΩ⋅cm2 has been achieved on 1700 V, 20 mΩ 4H-SiC DMOSFETs at 250°C based on a 3rd generation planar MOSFET platform, which is less than half of the resistance of the previous generation devices. A detailed analysis has been carried out with respect to the static and dynamic characteristics, third quadrant conduction, and body diode reverse recovery charge, etc.

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42

Matacena, Ilaria, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio, and Santolo Daliento. "Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs." Materials Science Forum 1062 (May 31, 2022): 669–75. http://dx.doi.org/10.4028/p-bzki64.

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SiC MOSFETs have already replace silicon-based device in power applications, even if some technological issues are still not solved. The most important of them is related to the complex traps distribution at SiC/SiO2 interface. Interface traps affect the overall device behavior, modifying channel mobility and introducing hysteresis. In this work experimental C-V and I-V curves are carried out on various commercial SiC MOSFET at different temperatures. The focus is the comparison of hysteresis arising in trench and planar SiC MOSFETs.

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Dhar, Sarit, Shurui Wang, John R. Williams, Sokrates T. Pantelides, and Leonard C. Feldman. "Interface Passivation for Silicon Dioxide Layers on Silicon Carbide." MRS Bulletin 30, no. 4 (April 2005): 288–92. http://dx.doi.org/10.1557/mrs2005.75.

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AbstractSilicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SiC interface critical to the development of SiC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility for inversion-mode 4H-SiC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market for devices that operate at 5 kV and below.

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Albrecht, Matthaeus, Tobias Erlbacher, Anton Bauer, and Lothar Frey. "Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation." Materials Science Forum 963 (July 2019): 827–31. http://dx.doi.org/10.4028/www.scientific.net/msf.963.827.

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In this work, the impact of a shallow aluminum channel implantation on the channel properties of SiC p-MOSFETs and digital SiC CMOS devices is investigated. For this purpose, p-MOSFETs, CMOS inverters and ring oscillators with different channel implantation doses were fabricated and electrically characterized. The threshold voltage of the resulting p-MOSFETs was shifted from-5 V to-3.6 V whereas the effective channel mobility was slightly decreased from 11.8 cm2/Vs to 10.2 cm2/Vs for a p-MOSFET channel implantation dose of 2∙1013 cm-2 compared to the non-implanted channel. The resulting p-MOSFETs enable SiC CMOS logic circuits to operate with a 5 V power supply and to satisfy 5 V TTL input level specification over the whole temperature range of 25°C to 400°C. Furthermore the propagation delay time of inverters was reduced by 80% at 25°C and 40% at 400°C compared to inverters without p-MOSFET channel implantation.

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Tominaga, Takaaki, Shiro Hino, Yohei Mitsui, Junichi Nakashima, Koutarou Kawahara, Shingo Tomohisa, and Naruhisa Miura. "Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD." Materials Science Forum 1004 (July 2020): 801–7. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.801.

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A total loss reduction of 3.3 kV power module by using SiC-MOSFET embedding SBD has been demonstrated through the investigation of DC characteristics and switching characteristics. Despite 1.1 times larger on-resistance than that of conventional SiC-MOSFET due to larger cell pitch, superior switching characteristics of SiC-MOSFET embedding SBD, which are due to smaller total chip area than that of SiC-MOSFET coupled with external SBD and due to elimination of recovery charge by minority carrier injection compared with SiC-MOSFET utilizing its body diode, enable the total loss reduction especially for high frequency operation.

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Hoffmann, Felix, Stefan Schmitt, and Nando Kaminski. "Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules." Materials Science Forum 1062 (May 31, 2022): 487–92. http://dx.doi.org/10.4028/p-7j50kd.

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In this work, the H3TRB performance of power modules with SiC MOSFET chips is investigated and compared to their silicon counterparts with similar electrical ratings. For this purpose, SiC MOSFETs and silicon IGBT chips are packaged in the same housing and with the same packaging technology and an H3TRB test is performed on both types of test devices. The results show that while both types exhibit an excellent H3TRB performance, the SiC MOSFETs had a significantly longer time to failure but also a wider failure distribution. Hence, the investigations presented in this paper confirm that properly designed SiC devices feature an equal or even better ruggedness against electro-chemical stress than standard silicon devics and are equally suitable for applications, which require operation in harsh environments.

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Feng, Haonan, Sheng Yang, Xiaowen Liang, Dan Zhang, Xiaojuan Pu, Xu Cui, Haiyang Wang, Jing Sun, Xuefeng Yu, and Qi Guo. "Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs." Journal of Nanoelectronics and Optoelectronics 16, no. 9 (September 1, 2021): 1423–29. http://dx.doi.org/10.1166/jno.2021.3088.

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This paper presents an experimental study of the dynamic and static characteristics of SiC Power MOSFETs in a total ionizing dose radiation environment. Their relationship has also been studied. Furthermore, the factors and mechanisms that affect the switching characteristics of SiC Power MOSFET in a total dose radiation environment are discussed. The change of switching characteristics of SiC VDMOS induced by radiation depends not only on the trapped charge accumulated at the interface and gate oxide above the channel but is also strongly dependent on the parasitic capacitance of the device. The former causes the negative shift of the threshold voltage to decrease the turn-on time and increase the turn-off time, while the latter increases both the turn-on time and turn-off time. The results of the study show that the static and dynamic performance of SiC power MOSFET must be considered simultaneously in the total dose radiation damage assessment and radiation hardening. Namely, the static characteristic represented by the threshold voltage and the dynamic characteristic represented by the turn-off time.

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Zhao, Zhiqin, and Xiaoqiong He. "Research on Digital Synchronous Rectification for a High-Efficiency DC-DC Converter in an Auxiliary Power Supply System of Magnetic Levitation." Energies 13, no. 1 (December 20, 2019): 51. http://dx.doi.org/10.3390/en13010051.

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In this paper, a new auxiliary power supply system of magnetic levitation based on the LLC DC-DC converter is proposed. The switches of the DC-DC converter are SiC MOSFET, which enables high frequency, high temperature, and high power density. For further improving the efficiency of the system and realizing the stability of the output voltage under different load conditions, the digital synchronous rectification (DSR) based on the phase shift control strategy is proposed. The prototype of the LLC DC-DC converter based on SiC MOSFET is implemented, which can realize zero voltage switching (ZVS) and zero current switching (ZCS). Then, the thermal image of DSR is presented, which proves that the power loss of SiC MOSFET with DSR is relatively low. Additionally, the system efficiency among the Si IGBT, SiC MOSFET, and SiC MOSFET with DSR is analyzed and the prototype demonstrates 98% peak efficiency. Finally, simulations, experiments, and data analysis prove the superiority of the proposed DSR strategy for the new auxiliary power supply system of magnetic levitation.

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Chen, Zheng, Yiying Yao, Wenli Zhang, Dushan Boroyevich, Khai Ngo, Paolo Mattavelli, and Rolando Burgos. "Development of an SiC Multichip Phase-Leg Module for High-Temperature and High-Frequency Applications." Journal of Microelectronics and Electronic Packaging 13, no. 2 (April 1, 2016): 39–50. http://dx.doi.org/10.4071/imaps.503.

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This article presents a 1,200-V, 120-A silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) phase-leg module capable of operating at 200°C ambient temperature. Paralleling six 20-A MOSFET bare dice for each switch, this module outperforms the commercial SiC modules in higher operating temperature and lower package parasitics at a comparable power rating. The module's high-temperature capability is validated through the extensive characterizations of the SiC MOSFET, as well as the careful selections of suitable packaging materials. Particularly, the sealed-step-edge technology is implemented on the direct-bonded-copper substrates to improve the module's thermal cycling lifetime. Though still based on the regular wire-bond structure, the module is able to achieve over 40% reduction in the switching loop inductance compared with a commercial SiC module by optimizing its internal layout. By further embedding decoupling capacitors directly on the substrates, the module also allows SiC MOSFETs to be switched twice faster with only one-third turn-off overvoltages compared with the commercial module.

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Wu, Zhaohui, Kangping Chen, and Bin Li. "A High Crosstalk Suppression SiC MOSFET Gate Driver." Journal of Physics: Conference Series 2584, no. 1 (September 1, 2023): 012071. http://dx.doi.org/10.1088/1742-6596/2584/1/012071.

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Abstract Fast switching speeds and high switching frequencies bring serious crosstalk problems in SiC MOSFET applications. In this paper, we design a SiC MOSFET gate driver with high crosstalk suppression capability by using a multi-level drive and active Miller clamp technology. In the design, an auxiliary branch is introduced to control the source potential of the SiC MOSFET to achieve multilevel driving. The branch has a simple structure, simple control logic, no external negative voltage supply, and adjustable negative output voltage. The proposed SiC MOSFET gate driver was designed using the Central Semiconductor Manufacturing Corporation (CSMC) 0.8 μm BCD high voltage process. The designed SiC MOSFET gate driver has an area of 2967 μm × 3180 μm. The simulation verification model is based on Wolfspeed’s SiC MOSFET product C3M0075120D. Post-layout simulation results show that a SiC MOSFET gate driver with a crosstalk suppression capability of over 150 V/ns is obtained, which can reliably drive SiC MOSFET power devices.

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Journal articles on the topic 'SiC power MOSFET'

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