Academic literature on the topic 'SiC power MOSFET'
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Journal articles on the topic "SiC power MOSFET"
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Lichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen, and John W. Palmour. "Performance and Reliability of SiC Power MOSFETs." MRS Advances 1, no. 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.
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ABSTRACTDue to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings, and with lower switching losses. Silicon carbide power MOSFET development has progressed rapidly since the market release of Cree’s 1200V 4H-SiC power MOSFET in 2011. This is due to continued advancements in SiC substrate quality, epitaxial growth capabilities, and device processing. For example, high-quality epitaxial growth of thick, low-doped SiC has enabled the fabrication of SiC MOSFETs capable of blocking extremely high voltages (up to 15kV); while dopant control for thin highly-doped epitaxial layers has helped enable low on-resistance 900V SiC MOSFET production. Device design and processing improvements have resulted in lower MOSFET specific on-resistance for each successive device generation. SiC MOSFETs have been shown to have a long device lifetime, based on the results of accelerated lifetime testing, such as high-temperature reverse-bias (HTRB) stress and time-dependent dielectric breakdown (TDDB).
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Li, Ruizhe. "The advantages and short circuit characteristics of SiC MOSFETs." Applied and Computational Engineering 49, no. 1 (March 22, 2024): 58–64. http://dx.doi.org/10.54254/2755-2721/49/20241059.
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SiC MOSFETs have exhibited considerable benefits in high-frequency, high-voltage, and high-temperature power electronics applications with outstanding material attributes as a result of the rapid advancement of power electronics technology. SiC MOSFETs slower short-circuit tolerance and faster switching rates provide new issues for the short-circuit prevention technology. In the opening section of the study, Si and SiC MOSFETs are compared and evaluated using various models and parametric factors. It has been demonstrated that SiC MOSFETs outperform Si MOSFETs in a variety of conditions and applications. The many SiC MOSFET short-circuit failure types as well as their underlying theories are initially explained in the papers main body. In addition, it examines the fundamentals of short-circuit test procedures and SiC MOSFET test circuits. The issues and limitations of the currently available SiC MOSFET short-circuit protection technology are then explored, along with factors impacting the short-circuit of SiC MOSFETs that are thoroughly examined. Lastly, the SiC MOSFET short-circuit protection technology development trend is forecasted, and potential future areas for improvement and innovation are considered. SiC MOSFET short-circuit protection technology will be enhanced and optimized to satisfy the needs of efficient and dependable power electronic systems as technology advances and application requirements expand.
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Hsu, Fu Jen, Cheng Tyng Yen, Hsiang Ting Hung, Jia Wei Hu, and Chih Fang Huang. "High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow V<sub>GS(on)</sub>." Key Engineering Materials 948 (June 6, 2023): 89–93. http://dx.doi.org/10.4028/p-tuypqj.
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SiC MOSFETs are rarely used in low-power consumer applications because of their cost and gate driving circuitry requirement. In this work, a cost-efficient SiC MOSFET with a usable 10V of VGS is proposed. The proposed SiC MOSFET could enable low-power applications, which is around tens to hundreds of watt, to implement SiC MOSFETs. As a result, the thermal performance is better than the GaN solution thanks to the better thermal conductance of the SiC.
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Funaki, Tsuyoshi, Yuki Nakano, and Takashi Nakamura. "Comparative Study of SiC MOSFETs in High Voltage Switching Operation." Materials Science Forum 717-720 (May 2012): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1081.
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SiC power device is expected to have high breakdown voltage with low on resistance, which cannot be attainable for conventional Si device. This study evaluates the switching performance of high voltage SiC MOSFETs with comparing to that of conventional Si power MOSFET having equivalent breakdown voltage. To this end, turn-on and turn-off switching operation of MOSFETs are assessed with resistive load for same conduction current density. Though the on resistance of SiC MOSFETs are quite lower than Si MOSFET, especially for trench gate type. But, SiC MOSFETs have larger terminal capacitance. Therefore, SiC MOSFETs show slower switching speed than Si MOSFETs for same current density condition.
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Kong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang, and Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance." Journal of Semiconductors 44, no. 5 (May 1, 2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.
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Abstract A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode (Hk-SJ-SBD MOSFET) is proposed, and has been compared with the SiC high-k MOSFET (Hk MOSFET), SiC superjuction MOSFET (SJ MOSFET) and the conventional SiC MOSFET in this article. In the proposed SiC Hk-SJ-SBD MOSFET, under the combined action of the p-type region and the Hk dielectric layer in the drift region, the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance (R on,sp). The integrated Schottky barrier diode (SBD) also greatly improves the reverse recovery performance of the device. TCAD simulation results indicate that the R on,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm2 with a 2240 V breakdown voltage (BV), which is more than 72.4%, 23%, 5.6% lower than that of the conventional SiC MOSFET, Hk SiC MOSFET and SJ SiC MOSFET with the 1950, 2220, and 2220 V BV, respectively. The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC, which are greatly reduced by more than 74% and 94% in comparison with those of all the conventional SiC MOSFET, Hk SiC MOSFET and SJ SiC MOSFET, due to the integrated SBD in the proposed MOSFET. And the trade-off relationship between the R on,sp and the BV is also significantly improved compared with that of the conventional MOSFET, Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature, respectively. In addition, compared with conventional SJ SiC MOSFET, the proposed SiC MOSFET has better immunity to charge imbalance, which may bring great application prospects.
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van Zeghbroeck, Bart, and Hamid Fardi. "Comparison of 3C-SiC and 4H-SiC Power MOSFETs." Materials Science Forum 924 (June 2018): 774–77. http://dx.doi.org/10.4028/www.scientific.net/msf.924.774.
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A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation. This includes the bulk mobility as a function of doping density, the breakdown field as a function of doping and the MOSFET channel mobility. A device model was constructed and then used to calculate the on-resistance and breakdown voltage of a properly scaled device as a function of the doping density of the blocking layer. A SPICE model was constructed to explore the switching transients and switching losses. The simulations indicate that, for the chosen material parameters, a 600 V 3C-SiC MOSFET has an on-resistance, which is less than half that of a 4H-SiC MOSFET as are the switching losses in the device.
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Qiu, Guoqing, Kedi Jiang, Shengyou Xu, Xin Yang, and Wei Wang. "Modeling and analysis of the characteristics of SiC MOSFET." Journal of Physics: Conference Series 2125, no. 1 (November 1, 2021): 012051. http://dx.doi.org/10.1088/1742-6596/2125/1/012051.
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Abstract Although the superior performance of SiC MOSFET devices has beenvalidated by many studies, it is necessary to overcome many technical bottlenecks to make SiC MOSFET gradually replace Si-based power devices into the mainstream. In view of the current situation where the performance of SiC MOSFETs in power conversion devices cannot be evaluated well at this stage, it is necessary to carry out fine modeling of SiC MOSFETs and establish accurate simulation models. In this paper, the powerful mathematical processing capability and rich modules of Matlab/Simulink are used to build a SiC MOSFET model, and then the product data sheet is compared with the fitted data. The results show that the switching simulation waveforms are in general agreement with the data sheet waveforms, and the error is less than 7%. Verifing the accuracy of the model and reducing the difficulty of modeling, it provides a new idea for establishing the circuit simulation model of SiC MOSFET in Matlab/Simulink.
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Matocha, Kevin, Peter A. Losee, Arun Gowda, Eladio Delgado, Greg Dunne, Richard Beaupre, and Ljubisa Stevanovic. "Performance and Reliability of SiC MOSFETs for High-Current Power Modules." Materials Science Forum 645-648 (April 2010): 1123–26. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1123.
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We address the two critical challenges that currently limit the applicability of SiC MOSFETs in commercial power conversion systems: high-temperature gate oxide reliability and high total current rating. We demonstrate SiC MOSFETs with predicted gate oxide reliability of >106 hours (100 years) operating at a gate oxide electric field of 4 MV/cm at 250°C. To scale to high total currents, we develop the Power Overlay planar packaging technique to demonstrate SiC MOSFET power modules with total on-resistance as low as 7.5 m. We scale single die SiC MOSFETs to high currents, demonstrating a large area SiC MOSFET (4.5mm x 4.5 mm) with a total on-resistance of 30 m, specific on-resistance of 5 m-cm2 and blocking voltage of 1400V.
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Green, Ronald, Aivars J. Lelis, and Daniel B. Habersat. "Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing." Materials Science Forum 717-720 (May 2012): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1085.
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Threshold voltage (VT) instability remains an important issue for the performance, reliability, and qualification of SiC power MOSFET devices. The direct application of existing reliability test standards to SiC power MOSFETs can in some cases result in an inconsistent pass/fail response for a given device. To ensure SiC MOSFET device reliability, some modifications to existing test methods may be necessary..
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Han, Ki Jeong, B. Jayant Baliga, and Woong Je Sung. "1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results." Materials Science Forum 924 (June 2018): 684–88. http://dx.doi.org/10.4028/www.scientific.net/msf.924.684.
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This paper presents a 1.2kV-rated 4H-SiC Split-Gate power MOSFET (SG-MOSFET) with superior high frequency figures-of-merit (HF-FOM). Electrical characteristics including reverse transfer capacitance and gate-to-drain charge are measured from fabricated devices on a 6-inch SiC wafer, demonstrating excellent performance. Compared to the conventional MOSFETs, the SG-MOSFET provides about 7x smaller HF-FOM [RonxCgd] and 2x smaller HF-FOM [RonxQgd] with improved reverse transfer capacitance and gate-to-drain charge.
Dissertations / Theses on the topic "SiC power MOSFET"
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Linewih, Handoko, and h. linewih@griffith edu au. "Design and Application of SiC Power MOSFET." Griffith University. School of Microelectronic Engineering, 2003. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20030506.013152.
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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (Dit) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to good agreement with the experimental transfer characteristic. The results demonstrate that both MEDICI and SPICE simulators can be used for design and optimization of 4H SiC MOSFETs and the circuits utilizing these MOSFETs. Based on critical review of SiC power MOSFETs, a new structure of SiC accumulation-mode MOSFET (ACCUFET) designed to address most of the open issues related to MOS interface is proposed. Detailed analysis of the important design parameters of the novel structure is performed using MEDICI with the parameter set used in the calibration process. The novel structure was also compared to alternative ACCUFET approaches, specifically planar and trench-gate ACCUFETs. The comparison shows that the novel structure provides the highest figure of merit for power devices. The analysis of circuit advantages enabled by the novel SiC ACCUFET is given in the final part of this thesis. The results from circuit simulation show that by utilizing the novel SiC ACCUFET the operating frequency of the circuit can be increased 10 times for the same power efficiency of the system. This leads to dramatic improvements in size, weight, cost and thermal management of power electronic systems.
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Linewih, Handoko. "Design and Application of SiC Power MOSFET." Thesis, Griffith University, 2003. http://hdl.handle.net/10072/367638.
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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (Dit) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to good agreement with the experimental transfer characteristic. The results demonstrate that both MEDICI and SPICE simulators can be used for design and optimization of 4H SiC MOSFETs and the circuits utilizing these MOSFETs. Based on critical review of SiC power MOSFETs, a new structure of SiC accumulation-mode MOSFET (ACCUFET) designed to address most of the open issues related to MOS interface is proposed. Detailed analysis of the important design parameters of the novel structure is performed using MEDICI with the parameter set used in the calibration process. The novel structure was also compared to alternative ACCUFET approaches, specifically planar and trench-gate ACCUFETs. The comparison shows that the novel structure provides the highest figure of merit for power devices. The analysis of circuit advantages enabled by the novel SiC ACCUFET is given in the final part of this thesis. The results from circuit simulation show that by utilizing the novel SiC ACCUFET the operating frequency of the circuit can be increased 10 times for the same power efficiency of the system. This leads to dramatic improvements in size, weight, cost and thermal management of power electronic systems.Thesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Microelectronic Engineering
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Chen, Cheng. "Studies of SiC power devices potential in power electronics for avionic applications." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLN045.
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Mes travaux de thèse dans les laboratoires SATIE de ENS de Cachan et Ampère de l’INSA de Lyon se sont déroulés dans le cadre du projet Gestion OptiMisée de l'Energie (GENOME) pour étudier le potentiel de certains composants de puissance (JFET, MOSFET et BJT) en carbure de silicium (SiC) dans des convertisseurs électroniques de puissance dédiés à des applications aéronautiques suite au développement de l'avion plus électrique. La première partie de mes travaux étudie la robustesse de MOSFET et BJT en SiC soumis à des régimes de court circuit. Pour les MSOFET SiC, en soumettant ces transistors à la répétition de plusieurs courts-circuits, nous observons une évolution du courant de fuite de grille qui semble être un bon indicateur de vieillissement. Nous définissons une énergie critique répétitive pour évaluer la robustesse à la répétition de plusieurs courts-circuits. Aucun effet significatif de la température ambiante n’a pu être mis en évidence sur la robustesse des MOSFET et BJT SiC sous contraintes de court-circuit. Pour les MOSFET, nous avons également constaté une élévation significative du courant de fuite de grille en augmentant de 600V à 750V la tension, ce qui se traduit également par une défaillance plus rapide. Après ouverture des boîtiers des MOSFET Rohm ayant présenté un court-circuit entre grille et source après défaillance, on remarque une fusion de la métallisation de source qui vient effectivement court-circuiter grille et source. Dans ce mode de défaillance particulier, le court-circuit entre grille et source auto-protège la puce en lui permettant de s’ouvrir.La deuxième partie de ce mémoire est consacrée à l’étude de JFET, MSOFET et BJT SiC en régime d’avalanche. Les JFET de SemiSouth et les BJT de Fairchild présentent une bonne robustesse à l’avalanche. Mais le test d'avalanche révèle la fragilité du MOSFET Rohm puisqu’il entre en défaillance avant d’entrer en régime d’avalanche. La défaillance du MOSFET Rohm et sa faible robustesse en régime d’avalanche sont liées à l’activation du transistor bipolaire parasite. Le courant d'avalanche n’est qu’une très faible partie du courant dans l’inductance et circule du drain/collecteur à la grille/base pour maintenir le transistor en régime linéaire. Une résistance de grille de forte valeur diminue efficacement le courant d'avalanche à travers la jonction drain-grille pour le JFET.La troisième partie concerne l’étude de la commutation de BJT SiC à très haute fréquence de découpage. Nous avons dans un premier temps cherché à valider des mesures de pertes par commutation. Après avoir vérifié l'exactitude de la méthode électrique par rapport à une méthode calorimétrique simplifiée, nous montrons que la méthode électrique est adaptée à l’estimation des pertes de commutation mais nécessite beaucoup d’attention. En raison de mobilité élevée des porteurs de charge dans le SiC, nous montrons que le BJT SiC ne nécessite pas l’utilisation de diode d’anti-saturation. Enfin, aucune variation significative des pertes de commutation n’a pu être constatée sur une plage de température ambiante variant de 25°C à 200°C.La quatrième partie concentre l’étude du comportement de MOSFET SiC sous contraintes HTRB (High Temperature Reverse Bias) et dans une application diode-less dans laquelle les transistors conduisent un courant inverse à travers le canal, exception faite de la phase de temps mort pendant laquelle c’est la diode de structure qui assurera la continuité du courant dans la charge. Les résultats montrent que la diode interne ne présente aucune dégradation significative lors de la conduction inverse des MOSFET. Le MOSFET Cree testé montre une dérive de la tension de seuil et une dégradation de l’oxyde de grille qui sont plus significatives lors des essais dans l’application diode-less que sous des tests HTRB. La dérive de la tension de seuil est probablement due au champ électrique intense régnant dans l’oxyde et aux pièges de charge dans l'oxyde de grilleMy PhD work in laboratories SATIE of ENS de Cachan and Ampère of INSA de Lyon is a part of project GEstioN OptiMisée de l’Energie (GENOME) to investigate the potential of some Silicon carbide (SiC) power devices (JFET, MOSFET and BJT) in power electronic converters dedicated to aeronautical applications for the development of more electric aircraft.The first part of my work investigates the robustness of MOSFET and SiC BJT subjected to short circuit. For SiC MOSFETs, under repetition of short-term short circuit, a gate leakage current seems to be an indicator of aging. We define repetitive critical energy to evaluate the robustness for repetition of short circuit. The effect of room temperature on the robustness of SiC MOSFET and BJT under short circuit stress is not evident. The capability of short circuit is not improved by reducing gate leakage current for MOSFET, while BJT shows a better robustness by limiting base current. For MSOFET, a significant increase in gate leakage current accelerates failure for DC voltage from 600V to 750V. After opening Rohm MOSFETs with a short circuit between gate and source after failure, the fusion of metallization is considered as the raison of failure. In this particular mode of failure, the short circuit between gate and source self-protects the chip and opens drain short current.The second part of the thesis is devoted to the study of SiC JFET, MSOFET and BJT in avalanche mode. The SemiSouth JFET and Fairchild BJT exhibit excellent robustness in the avalanche. On the contrary, the avalanche test reveals the fragility of Rohm MOSFET since it failed before entering avalanche mode. The failure of Rohm MOSFET and its low robustness in avalanche mode are related to the activation of parasitic bipolar transistor. The avalanche current is a very small part of the current in the inductor. It flows from the drain/collector to the gate/base to drive the transistor in linear mode. A high-value gate resistance effectively reduces the avalanche current through the drain-gate junction to the JFET.The third part of this thesis concerns the study of switching performance of SiC BJT at high switching frequency. We initially attempted to validate the switching loss measurements. After checking the accuracy of the electrical measurement compared to calorimetric measurement, electrical measurement is adopted for switching power losses but requires a lot of attention. Thanks to high carrier charge mobility of SiC material, SiC BJT does not require the use of anti-saturation diode. Finally, no significant variation in switching losses is observed over an ambient temperature range from 25°C to 200°C.The fourth part focuses on the study of SiC MOSFET behavior under HTB (High Temperature Reverse Bias) and in diode-less application in which the transistors conduct a reverse current through the channel, except for the dead time during which the body diode ensure the continuity of the current in the load. The results show that the body diode has no significant degradation when the reverse conduction of the MOSFET. Cree MOSFET under test shows a drift of the threshold voltage and a degradation of the gate oxide which are more significant during the tests in the diode-less application than under HTRB test. The drift of the threshold voltage is probably due to intense electric field in the oxide and the charge traps in the gate oxide
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Rajagopal, Narayanan. "Design of 1.7 kV SiC MOSFET Switching-Cells for Integrated Power Electronics Building Block (iPEBB)." Thesis, Virginia Tech, 2021. http://hdl.handle.net/10919/104148.
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The need for high-density power electronics converters becomes more critical by the day as energy consumption continues to grow across the world. Specifically, the need for medium-voltage (MV) high-density converters in power distribution systems, electric ships, and airplanes become more critical as weight and space becomes more a premium. The limited space and footprint require new packaging technologies and methods to develop an integrated power converter.
The advancement of wide-bandgap (WBG) devices like silicon carbide (SiC) allows converters to have higher power and faster switching... To benefit from these devices, the packaging of the converter needs to be carefully considered. This thesis presents the design of a 250 kW integrated power electronics building block (iPEBB) for future electric system applications. This work explores the common substrate concept that would serve as the electrical, thermal, and mechanical foundation for the converter. State-of-the-art organic direct-bonded copper (ODBC) is explored to serve as the material foundation for the common substrate. Multi-domain simulations are used to design the integrated SiC bridges to achieve a power loop inductance of 3.5 nH, a maximum temperature of 175 °C, and a weight of 16 kg. ODBC and silicon nitride switching cells are packaged and analyzed in order to see the benefits on a multi-layer design as well as determining electrical and thermal trade-offs. The insights gained from hardware testing will help in the redesign and refinement of the iPEBB.M.S.
This thesis presents the design of an integrated power electronics building block (iPEBB) for high-density systems. The PEBB concept allows for modular converters that can perform various power conversions. The design begins with exploring state-of-the-art substrates that will serve as the foundation for the iPEBB. Due to the integrated design, the substrate plays a vital role in the thermal, electrical, and mechanical performance, and contributes to the weight and reliability of the iPEBB. State-of-the-art organic direct-bonded copper (ODBC) substrates and multi-layer silicon nitride substrates are explored in this work. The ODBC is used to develop a common substrate for the converter, which allows for a high level of integration between different SiC half-bridges. Switching-cell prototypes based on the ODBC and multi-layer silicon nitride are fabricated to provide insight into the electrical and thermal performance of different substrates. This information will aid in the further redesign and refinement of the iPEBB concept.
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Soler, Victor. "Design and process developments towards an optimal 6.5 kV SiC power MOSFET." Doctoral thesis, Universitat Politècnica de Catalunya, 2019. http://hdl.handle.net/10803/668916.
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A sustainable future requires efficient power electronic converters at any stage of the electrical energy consumption. Silicon carbide (SiC) is one of the most technologically advanced wide bandgap semiconductors that can outperform silicon limits for power devices. SiC power MOSFETs are of the greatest interest since they are unipolar gate-controlled switches with high blocking voltage capability and reasonably low specific on-resistance. The focus of this thesis is on the design optimisation and process technology refinement towards the improvement of high-voltage SiC MOSFETs. Previous developments in our group were taken as a reference for this work. The results of this research allowed the fabrication of large-area SiC power MOSFETs with voltage ranges targeting 1.7 kV up to 6.5 kV.
The inherent properties of SiC entail challenging technological solutions to successfully integrate a power MOSFET of such high-voltage capability. To ensure suitable blocking capability, different planar edge termination structures have been designed, optimised by TCAD simulation and implemented on PiN diodes. The termination schemes considered are single-zone JTE, FGRs and a novel RA-JTE structure combining JTE with rings. RA-JTE design, with the lowest sensitivity to fabrication process deviations and a lower consumed area, achieved more than 90% of the ideal breakdown voltage and suitable blocking capability up to 6.5 kV.
The optimisations performed on the unit-cell of the SiC power MOSFET target both the layout design and the fabrication process. The optimisation has been performed by TCAD modelling and experimental evaluation of specific test structures. Several techniques to improve the performance of the fabricated devices have been considered: i) the use of an offset retrograde p-body profile to provide an adequate Vth value while preventing p-body punch-through, ii) a submicronic self-aligned channel definition, iii) a boron treatment to the gate oxide to improve channel mobility, iv) a discrete location of the p-contact to reduce cell-pitch, v) the use of a lower-doped-source (LDS) to improve reliability, vi) the optimisation of the JFET area, and vii) the integration of gate runners to improve the switching performance. As a result of these investigations, a full mask-set were designed and used for processing wafers of several voltage-class in different batches. All the fabrication steps have been carried out at IMB-CNM cleanroom.
The electrical characterisation of large-area devices has evidenced an optimal Vth in the range of 5 V, a proper gate control, and a good blocking capability. We obtained relatively high specific on-resistance due to the large cell pitch dimensions required by IMB-CNM cleanroom design rules as well as a still low channel mobility. Fabricated SiC MOSFETs are capable of switching at high bus voltages (tested up to 80% of the rated voltage). Although, their switching performance is limited by internal gate resistance. Fabricated devices have shown better short-circuit capability (>15 µs) than existing commercial devices, mainly due to the cell design considerations.
The evaluation of electrical performance evidenced the successful functionality of the fabricated VDMOS up to 6.5 kV and validates our new RA-JTE termination design. On the other hand, the novel boron doping treatment to the gate oxide clearly demonstrated to improve the on-resistance of our devices in all voltage classes without affecting breakdown and short-circuit capabilities. Nevertheless, it strongly compromises stability and reliability at temperatures above 100 °C. These results show that the MOS interface quality is still the major issue for the development of reliable SiC power MOSFETs.
Finally, alternative SiC structures have also been investigated to take advantage of the SiC superior material properties. These include a SiC IGBT showing conductivity modulation, and a preliminary SiC CMOS cell able to operate at high temperatures.Un futur sostenible requereix convertidors electrònics d'alta potència eficients per totes les fases del consum d'energia elèctrica. El carbur de silici (SiC) és un dels semiconductors de banda prohibida ampla més avançats que permet superar els límits de silici en dispositius de potència. El gran interès en els MOSFETs de potència SiC recau en que són interruptors unipolars que presenten una alta capacitat de tensió de bloqueig i una resistència específica relativament baixa. L’objectiu d’aquesta tesi és la optimització del disseny i el perfeccionament de la tecnologia de processos per a la millora dels MOSFETs d’alta tensió SiC tenint com a referencia els desenvolupaments previs realitzats pel grup. Els resultats d'aquesta investigació han permès la fabricació de MOSFETs de potència de SiC d’àrea gran amb capacitat de bloqueig des de 1,7 kV fins a 6,5 kV. Les inherents propietats del SiC requereixen solucions tecnològiques específiques per a integrar amb èxit un MOSFET de potència de tensió tan elevada. Per garantir una bona capacitat de bloqueig, s'han dissenyat diferents estructures de terminació planars, optimitzades per simulació i implementades sobre díodes PiN. Els esquemes de terminació considerats son JTE mono-zona, FGR i una nova estructura RA-JTE que combina una JTE amb anells flotants. La terminació RA-JTE, amb una menor sensibilitat a desviacions del procés de fabricació i menor àrea consumida, ha aconseguit més del 90% de la tensió ideal i bona capacitat de bloqueig per dispositius de fins a 6,5 kV. Les millores realitzades a la cel·la del MOSFET de SiC afecten tant al disseny com al procés de fabricació. L’optimització de la cel·la bàsica s’ha realitzat mitjançant simulacions TCAD i l’avaluació de dades experimentals mesurades en estructures de test específiques. Les tècniques aplicades per a la millora del rendiment dels MOSFETs de SiC inclouen: i) l’ús d’un perfil de dopatge retrògrad pel pou p per obtenir un valor de Vth adequada alhora que s'evita el punch-through del pou p, ii) canal auto-alineat de longitud sub-micrònica, iii) un tractament de bor a l'òxid de la porta per millorar la interfície, iv) la ubicació discreta del contacte p per reduir les dimensions de la cel·la, v) una regió de font menys dopada (LDS) per millorar la fiabilitat, vi) l’optimització de l’àrea JFET i vii) la integració de corredors de porta per reduir el temps de commutació. Com a resultat d'aquestes investigacions, un joc complet de màscares s’ha dissenyat i utilitzat per processar oblies de diferents rangs de tensió. Tots els processos de fabricació s’han realitzat a la sala blanca de l’IMB-CNM. La caracterització elèctrica dels MOSFETs d’àrea gran mostra una Vth en el rang de 5 V, control de la porta i bona capacitat de bloqueig. No obstant, la resistència específica és relativament alta a causa de les dimensions de cel·la i la baixa mobilitat al canal. Els MOSFETS de SiC fabricats commuten a altes tensions de bus, però el temps de transició està limitat per la resistència interna de porta. Els dispositius fabricats presenten una capacitat de curtcircuit (>15 µs) superior als dispositius comercials, principalment gràcies al disseny de la cel·la. L’anàlisi del comportament elèctric valida el funcionament satisfactori dels MOSFETs de SiC fabricats fins a 6,5 kV així com també el disseny de terminació RA-JTE. El nou tractament de bor a l’òxid de porta ha demostrat reduir la resistència dels VDMOS fabricats en totes les classes de tensió sense afectar a la capacitat de bloqueig i de curt-circuit, però en compromet l'estabilitat i la fiabilitat a més de 100 °C. Aquests resultats mostren que la qualitat de la interfície continua sent el punt clau per al desenvolupament de MOSFETs de potència fiables en SiC. Finalment, també s’han investigat estructures alternatives en SiC. Destaca la integració d’un IGBT...
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Phankong, Nathabhat. "Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement." 京都大学 (Kyoto University), 2010. http://hdl.handle.net/2433/126807.
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DiMarino, Christina Marie. "High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors." Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/78116.
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This thesis provides insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. These manufacturers include: Cree Inc., ROHM Semiconductor, General Electric, Fairchild Semiconductor, GeneSiC Semiconductor, Infineon Technologies, and SemiSouth Laboratories. To carry out this work, static characterization of each device was performed from 25 ºC to 200 ºC. Dynamic characterization was also conducted through double-pulse tests. Accordingly, this thesis describes the experimental setup used and the different measurements conducted, which comprise: threshold voltage, transconductance, current gain, specific on-resistance, parasitic capacitances, internal gate resistance, and the turn on and turn off switching times and energies. For the latter, the driving method used for each device is described in detail. Furthermore, for the devices that require on-state dc currents, driving losses are taken into consideration. While all of the SiC transistors characterized in this thesis demonstrated low specific on-resistances, the SiC BJT showed the lowest, with Fairchild's FSICBH057A120 SiC BJT having 3.6 mΩ•cm2 (using die area) at 25 ºC. However, the on-resistance of GE's SiC MOSFET proved to have the smallest temperature dependency, increasing by only 59 % from 25 ºC to 200 ºC. From the dynamic characterization, it was shown that Cree's C2M0080120D second generation SiC MOSFET achieved dv/dt rates of 57 V/ns. The SiC MOSFETs also featured low turn off switching energy losses, which were typically less than 70 µJ at 600 V bus voltage and 20 A load current.Master of Science
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STELLA, FAUSTO. "On-line Junction Temperature Estimation of SiC Power MOSFETs." Doctoral thesis, Politecnico di Torino, 2019. http://hdl.handle.net/11583/2734315.
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Francisco, sousa alves Luciano. "Series-connected SiC-MOSFETs : A Novel Multi-Step Packaging Concept and New Gate Drive Power Supply Configurations." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT050.
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Ce travail de thèse étudie de nouvelles configurations d'alimentation de commande rapprochée et un nouveau concept de packaging afin d'améliorer les performances des MOSFETs SiC connectés en série. Les nouvelles configurations de commande rapprochée sont proposées afin de réduire les courants de bruit qui circulent dans la partie commande du système électrique. De plus, une nouvelle alimentation de commande de grille est proposée pour augmenter le dv / dt de la cellule de commutation. Ces améliorations, c'est-à-dire la réduction du courant de bruit et l'amplification du dv/dt, sont obtenues en modifiant l'impédance des circuits de commande de grille. Le nouveau concept de packaging est proposé afin d'améliorer les performances d’équilibrage de tension. Les nouvelles configurations de commande rapprochée et les concepts de packaging sont introduits et analysés grâce à des modèles analytique et des simulations. Ensuite, des essayes expérimentales sont effectuées pour confirmer que les concepts proposés sont meilleurs que les concepts traditionnels en termes d'équilibrage de tension, de vitesse de commutation et de réduction EMI conduiteThis work investigates new gate drive power supply configurations and a novel multi-steppackaging concept in order to improve the performance of series-connected SiC-MOSFETs. The new gate drive configurations are proposed in order to reduce noise currents that circulate in the control part of the electrical system. Furthermore, a new gate drive power supply is proposed to increase the dv/dt of the switching cell. These improvements, i.e., noise current reduction and dv/dt boosting, are achieved by modifying the impedance of the gate drive circuitry. The novel multi-step packaging concept is proposed in order to improve the voltage sharing performance. The proposed package geometry considers optimal dielectric isolation for each device leading to a multi-step geometry. It has a significant impact on the parasitic capacitances introduced by the packaging structure that are responsible for voltageunbalances. The new gate driver configurations and the proposed multi-step packaging concepts are introduced and analysed thanks to equivalent models and time domain simulations. Then, experimental set-ups are performed to confirm that the proposed concepts are better than traditional ones in terms of voltage balancing, switching speed and conducted EMI reduction
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Noborio, Masato. "Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78006.
Full textBooks on the topic "SiC power MOSFET"
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Gunn, Steven. Law and power. Oxford University Press, 2017. http://dx.doi.org/10.1093/acprof:oso/9780199659838.003.0010.
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The new men knew how to use the law to pursue their own interests as well as the king’s. They hired talented lawyers to handle their business and deftly chose different courts for different kinds of suits—chancery, king’s bench, common pleas, and others—or arbitration for complex disputes. Several of them acquired bad reputations for abusing their power, but the king and their fellow councillors stood ready to rein them in, most obviously at the fall of Empson and Dudley, but also in the recurrent troubles of Sir John Hussey.
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Williams, Sonja D. Black Political Power. University of Illinois Press, 2017. http://dx.doi.org/10.5406/illinois/9780252039874.003.0012.
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This chapter focuses on Richard Durham's pursuit of new creative challenges after writing The Greatest. Durham had long talked about writing a book about Aesop—the man whose morality tales known as fables carry his name. Another historical figure who had long drawn Durham's creative interest was a man named Hannibal Barca, also known as Hannibal the Great or Hannibal the Conqueror. However, neither the Aesop nor the Hannibal project materialized. By the late 1970s, Durham knew that the seeds of a growing black political movement were sprouting in his hometown. His longtime friend, Illinois congressman Harold Washington, eventually became the first black mayor in Chicago, one of the most segregated and politically contentious cities in America. On April 27, 1984, Durham was in New York City meeting with Rukmini Sukarno about business opportunities as well as the autobiography she wanted him to write. Not long after the meeting, Durham succumbed to an acute coronary thrombosis. He was sixty-six years old.
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Staples, Lee. Roots to Power. 3rd ed. ABC-CLIO, LLC, 2016. http://dx.doi.org/10.5040/9798216010050.
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The third edition of the manual for community organizers tells readers how to most effectively implement community action for social change, clearly laying out grassroots organizing principles, methods, and best practices. Written for those who want to improve their own lives or the lives of others, this thoroughly revised how-to manual presents techniques groups can use to organize successfully in pursuit of their dreams. The book combines time-tested, universal principles and methods with cutting-edge material addressing new opportunities and challenges. It covers basic concepts and best practices and offers step-by-step guidelines on things an organizer needs to know, such as how to identify issues, formulate strategies, set goals, recruit participants, and much more. The work focuses on six organizing arenas: turf/geography, failth-based, issue, identity, shared experience, and work-related. It offers new or expanded material addressing community development, use of social media, internal organizational dynamics, electoral organizing, evaluation/assessment, and prevention of burnout for key leaders. There are also nuts-and-bolts articles by experts who address topics such as action research, lobbying, legal tactics, and grassroots fundraising. Numerous case examples, charts, worksheets, and small group exercises enrich the discussion and bring the material to life.
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Bradford, Alfred S. Leonidas and the kings of Sparta. ABC-CLIO, LLC, 2011. http://dx.doi.org/10.5040/9798400678288.
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This pivotal history of the kings of Sparta not only describes their critical leadership in war, but also documents the waxing and waning of their social, political, and religious powers in the Spartan state. The Spartans have seemingly never gone out of interest, serving as mythic icons who exemplify fearlessness and an unwillingness to give in against impossible odds. Yet most are unaware of the true nature of the Spartan leaders—the fact that the kings maintained their position of power for 600 years by their willingness to compromise, even if it meant giving up some of their power, for example. Organized in a logical and chronological order, Leonidas and the Kings of Sparta: Mightiest Warriors, Fairest Kingdom describes the legendary origins of the dual kingship in Sparta, documents the many reigning eras of the kings, and then concludes with the time when the kingship was abolished six centuries later. The book examines the kings' roles in war and battle, in religion, in the social life of the city, and in formulating Spartan policy both at home and abroad. No other book on Sparta has concentrated on describing the role of the kings—and their absolutely essential contributions to Spartan society in general.
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Gentry, John A. How Wars Are Won and Lost. ABC-CLIO, LLC, 2011. http://dx.doi.org/10.5040/9798400666971.
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This provocative book seeks to answer a most crucial—and embarrassing—question concerning the U.S. military: why the United States is so often stymied in military confrontations with seemingly weaker opponents, despite its "superpower" status. This fascinating book examines a question that continues to puzzle soldiers, statesmen, and scholars: why do major powers—including the ostensible superpower United States—repeatedly perform poorly against seemingly overmatched adversaries? And what can they, and the United States, do to better achieve their military objectives? How Wars are Won and Lost: Vulnerability and Military Power argues that beyond relying solely on overwhelming military might, the United States needs to focus more on exploiting weaknesses in their adversaries—such as national will, resource mobilization, and strategic miscues—just as opposing forces have done to gain advantage over our military efforts. The author tests the "vulnerability theory" by revisiting six conflicts from the Philippine War of 1899-1902 to the ongoing actions in Iraq and Afghanistan, showing again and again that victory often depends more on outthinking the enemy than outmuscling them.
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Leo, Russ, Katrin Röder, and Freya Sierhuis, eds. Fulke Greville and the Culture of the English Renaissance. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198823445.001.0001.
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This book intends to provide a comprehensive reappraisal of the work of the Renaissance poet and politician Sir Fulke Greville, whose political career stretched from the heyday of the Elizabethan age into the Stuart period. While Greville’s literary achievements have traditionally been overshadowed by those of his more famous friend Sir Philip Sidney, his oeuvre comprises a highly diverse range of works of striking force and originality, comprising a sonnet sequence, a biography of Sir Philip Sidney, a series of philosophical treatises, and two closet dramas set in the Ottoman Empire. The essays gathered in this volume investigate the intersections between poetics, poetic form, and political and religious thought in Greville’s work, arguing how they participate in all of the most important debates of the post-Reformation period, such as the nature of grace and the status of evil; the exercise of sovereignty and scope and limits of political power; and the nature of civil and religious idolatry. They examine Greville’s career as a courtier and patron, and foreground both his own concerns with the posthumous life of authors and their works, and his continuing importance during the Interregnum and Restoration periods.
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Thompson, William R., and Leila Zakhirova. The Netherlands: Not Quite the First Modern Economy. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780190699680.003.0006.
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In this chapter, we look at four cases: Genoa, Venice, Portugal, and the Netherlands. Genoa, Venice, and Portugal acted as transitional agents over a five- to six-hundred-year period, creating sea power and trading regimes to move Asian commodities and innovations to and from European markets. While Genoa and Venice were primarily Mediterranean-centric, Portugal led the breakthrough from the constraints of the inland sea and inaugurated Europe’s Atlantic focus. None of these actors possessed the power of China nor subsequent global actors, but for their age, they were critical technological leaders, providing a technological bridge from the eastern zone of Eurasia to the western zone. The Netherlands fits into this narrative by combining Baltic and Atlantic activities to construct a European trade regime that greatly overshadowed the earlier transitional efforts. Buttressed by the development of agrarian and industrial technology and a heavy reliance on peat and wind as energy sources, the Dutch case seems idiosyncratic. Most critically, its energy transition was only partial. Although the Netherlands made clear advances in some power-driven machinery and technological innovation , the heat and energy that were expended remained constrained by the inherent limitations of the energy sources.
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Ulrichsen, Kristian Coates. Qatar and the Gulf Crisis. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780197525593.001.0001.
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Qatar and the Gulf Crisis examines the attempt by four states – Saudi Arabia, the United Arab Emirates, Bahrain, and Egypt – to isolate and blockade Qatar. The book explores in detail the policy responses taken in Qatar since early-2017 by a small state, cut off by its neighbors and subject to a regional power-play designed to appeal to the baser instincts of a U.S. presidency that had taken office lacking any real sense of a foreign policy and vulnerable, in its first months, to unprecedented attempts by foreign powers to influence American domestic and national security interests. The blockade of Qatar was launched fifty years to the day since Israel launched a surprise attack on the Egyptian Air Force at the start the Six-Day War. Just as that war came to define regional politics across the Middle East for a generation so the blockade of Qatar has developed into the most serious rupture in the Gulf since the Iraqi invasion of Kuwait in August 1990 and has become a similarly era-defining event for the region. Qatar and the Gulf Crisis examines how and why Qatar was able to beat back a blockade that was supposed to split the country and force it into a position of submission to the would-be regional hegemony of Saudi Arabia and Abu Dhabi (in the UAE).
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Hanson, Jeffrey, and Sharon Krishek, eds. Kierkegaard's <I>The Sickness Unto Death</I>. Cambridge University Press, 2022. http://dx.doi.org/10.1017/9781108883832.
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The Sickness unto Death (1849) is commonly regarded as one of Kierkegaard's most important works – but also as one of his most difficult texts to understand. It is a meditation on Christian existentialist themes including sin, despair, religious faith and its redemptive power, and the relation and difference between physical and spiritual death. This volume of new essays guides readers through the philosophical and theological significance of the work, while clarifying the complicated ideas that Kierkegaard develops. Some of the essays focus closely on particular themes, others attempt to elucidate the text as a whole, and yet others examine it in relation to other philosophical views. Bringing together these diverse approaches, the volume offers a comprehensive understanding of this pivotal work. It will be of interest to those studying Kierkegaard as well as existentialism, religious philosophy, and moral psychology.
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Trollope, Anthony. Orley Farm. Edited by Francis O'Gorman. Oxford University Press, 2018. http://dx.doi.org/10.1093/owc/9780198803744.001.0001.
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There was a power of endurance about her, and a courage that was almost awful. Did Lady Mason forge a codicil to her husband's will, allowing Orley Farm to pass to her son or not? Orley Farm centres on this case of forgery, and the anguish and guilt of Lady Mason. Surrounding this enigmatic woman and her apparent crime are her elderly lover, Sir Peregrine Orme; her principled but thoughtless son, Lucius; and, not least, a group of determined lawyers. Orley Farm contains the plot with which Trollope was most pleased. Drawing on family experience of the loss of an inheritance, the novel tackles the tremendous question of property fraud. The result, as George Orwell observed, is one of the most brilliant novels about a law suit in English fiction. Orley Farm dates from a confident period of its authorâs life. It breathes an air of writerly assurance, with Trollope at the height of his competitiveness with Dickens. In this work Trollope claims the Victorian legal novel as his own.
Book chapters on the topic "SiC power MOSFET"
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Baliga, B. Jayant. "SiC Planar MOSFET Structures." In Advanced Power MOSFET Concepts, 477–533. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-5917-1_9.
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Baliga, B. Jayant. "SiC Planar MOSFET Structures." In Advanced High Voltage Power Device Concepts, 235–92. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_6.
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M’Sirdi, N. K., K. Frifita, E. Baghaz, A. Naamane, and M. Boussak. "State Space Models for Power SiC MOSFET." In Lecture Notes in Electrical Engineering, 298–305. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1405-6_36.
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Guzman, Cristina, Alben Cardenas, Kodjo Agbossou, and Mamadou Doumbia. "Modeling of SiC MOSFET for Power Electronics Converters Simulation." In Data-Driven Modeling for Sustainable Engineering, 361–74. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-13697-0_27.
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Imaizumi, Masayuki, Yoichiro Tarui, Shin-Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami, and Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." In Silicon Carbide and Related Materials 2005, 1289–92. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1289.
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Jouha, W., A. El Oualkadi, P. Dherbécourt, E. Joubert, and M. Masmoudi. "An Extraction Method of SiC Power MOSFET Threshold Voltage." In Recent Advances in Electrical and Information Technologies for Sustainable Development, 11–20. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-05276-8_2.
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Wu, Yifan, Chi Li, Zedong Zheng, Lianzhong Wang, Tao Liu, and Guojing Liu. "A Behavior Model of Planar SiC MOSFET Considering Avalanche Breakdown." In The Proceedings of 2022 International Conference on Wireless Power Transfer (ICWPT2022), 748–65. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-0631-4_75.
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Xie, Ning, Yanjun Zhao, Wei Zhao, Jingpeng Yue, Wei Wang, and Chiye Zhang. "Design Method for Power Unit of Power Conversion System Based on SiC MOSFET." In Lecture Notes in Electrical Engineering, 384–95. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-1528-4_39.
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Deng, Dahan, Jingwei Zhang, and Shuhao Li. "SiC MOSFET Gate Drive Power Supply Based on Active Clamp Flyback." In The Proceedings of 2022 International Conference on Wireless Power Transfer (ICWPT2022), 614–22. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-0631-4_61.
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Wang, Xinying, Xiaofeng Tao, Leilei Zhan, Xin Tang, Yonghao Sun, Yibo Sun, Chaohui Cui, et al. "Design of Wide Voltage Range DC–DC Converter Based on SiC MOSFET." In Conference Proceedings of 2022 2nd International Joint Conference on Energy, Electrical and Power Engineering, 594–602. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-4334-0_74.
Full textConference papers on the topic "SiC power MOSFET"
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Pratap, Rajendra, R. K. Singh, and Vineeta Agarwal. "SiC Power MOSFET modeling challenges." In 2012 Students Conference on Engineering and Systems (SCES). IEEE, 2012. http://dx.doi.org/10.1109/sces.2012.6199109.
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De, D., S. Lopez-Arevalo, A. Lamantia, and A. Castellazzi. "SiC MOSFET based Avionic Power Supply." In 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014). Institution of Engineering and Technology, 2014. http://dx.doi.org/10.1049/cp.2014.0339.
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Matocha, Kevin. "Challenges in SiC power MOSFET design." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422412.
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Zhuolin, Duan, Zhang Dong, Fan Tao, and Wen Xuhui. "A simple SiC power MOSFET model." In IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2017. http://dx.doi.org/10.1109/iecon.2017.8216122.
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Su, Gui-Jia. "Loss Modeling for SiC MOSFET Inverters." In 2018 IEEE Vehicle Power and Propulsion Conference (VPPC). IEEE, 2018. http://dx.doi.org/10.1109/vppc.2018.8604972.
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Rice, Julius, and John Mookken. "SiC MOSFET gate drive design considerations." In 2015 IEEE International Workshop on Integrated Power Packaging (IWIPP). IEEE, 2015. http://dx.doi.org/10.1109/iwipp.2015.7295969.
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Yamane, A., K. Koyanagi, M. Kozako, K. Fuji, and M. Hikita. "Fabrication and evaluation of SiC inverter using SiC-MOSFET." In 2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS 2013). IEEE, 2013. http://dx.doi.org/10.1109/peds.2013.6527171.
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Beczkowski, Szymon, Helong Li, Christian Uhrenfeldt, Emanuel-Petre Eni, and Stig Munk-Nielsen. "10kV SiC MOSFET split output power module." In 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE, 2015. http://dx.doi.org/10.1109/epe.2015.7309450.
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Pratap, Rajendra, R. K. Singh, and Vineeta Agarwal. "SPICE model development for SiC power MOSFET." In 2012 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES). IEEE, 2012. http://dx.doi.org/10.1109/pedes.2012.6484369.
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Linewih, Handoko, Sima Dimitrijev, and H. Barry Harrison. "Development of power accumulation-type SiC MOSFET." In Asia Pacific Symposium on Microelectronics and MEMS, edited by Bernard Courtois and Serge N. Demidenko. SPIE, 1999. http://dx.doi.org/10.1117/12.368421.
Full textReports on the topic "SiC power MOSFET"
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Sbrockey, Nick M., Gary S. Tompa, Michael G. Spencer, and Chandra M. V. S. Chandrashekhar. SiC Power MOSFET with Improved Gate Dielectric. Office of Scientific and Technical Information (OSTI), August 2010. http://dx.doi.org/10.2172/1067486.
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Cooper, James A., and Jr. Development of SiC Power MOSFETs with Low On-Resistance for Military and Commercial Applications. Fort Belvoir, VA: Defense Technical Information Center, March 2003. http://dx.doi.org/10.21236/ada414680.
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Vandevort, Daniel, Chandler Engel, Shaun Stanton, and Jeffrey Ellis. Application of limited-field-data methods in reservoir volume estimation : a case study. Engineer Research and Development Center (U.S.), March 2024. http://dx.doi.org/10.21079/11681/48268.
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The conventional approach to estimating lake or reservoir water volumes hinges on field data collection; however, volume estimation methods are available that use little or no field data. Two such methods—the simplified V-A-h (volume-area-height) and the power function—were applied to a set of six anthropogenic reservoirs on the Fort Jackson, South Carolina, installation and checked against a validation data set. Additionally, seven interpolation methods were compared for differences in total volume estimation based on sonar data collected at each reservoir. The simplified V-A-h method overestimated reservoir volume more than each technique in the power function method, and the categorical technique underestimated the most reservoir volumes of all three techniques. Each method demonstrates high Vₑᵣᵣ variability among reservoirs, and Vₑᵣᵣ for the Power Function techniques applied here is consistent with that found in previous research in that it is near or less than 30%. Compared with Vₑᵣᵣ in other studies evaluating the simplified V-A-h method, Vₑᵣᵣ in this study was found to be 10%–20% higher.
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Salonen, Hilma, and Lumi Tomrén. Can local value creation induce a sense of justice during green transitions? A study of six rural areas in Denmark, Finland, and Norway. Nordregio, September 2023. http://dx.doi.org/10.6027/r:2023:91403-2503.
Full textAbstract:
The accelerating impacts of climate change, the need to adapt to changing economic and political realities, and the recent energy crisis have made the green transition something that most Nordic citizens acknowledge. However, especially rural areas and their communities are at risk of being reduced to passive instruments of national green transition measures featuring heavy land-use. These conditions make it very difficult to create a sense of justness in green transitions, leading to growing sense of alienation and resentment and putting the national climate goals in danger. From this starting point, the case studies of the research project “Just Green Transition on Rural Areas: Local Benefits from Value Creation” set out to examine what kind of benefits would generate value from green transition measures in the direct impact zone of new energy projects. The case studies took place in three Nordic countries and six locations: in Northern Ostrobothnia and Northern Central Finland of Finland, involving wind power and land use planning; in Nord-Fron and Nord-Odal in Norway, involving both wind power and strategic sustainability work; and in Skive and Bornholm of Denmark, involving a hybrid mix of renewable energy sources in the context of industrial park development. The results highlight the importance of local involvement and trust in green energy transitions in Nordic rural areas. Neglecting local needs can cause resistance to renewable projects. Early engagement, transparent communication, and ensuring local benefits are vital. While monetary benefits attract attention, relying solely on them can create community divisions. A blend of community engagement, environmental benefits, and local ownership of projects fosters trust and a deeper sense of justice in these transitions.
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Amores, Antonio F., Henrique Basso, Johannes Simeon Bischl, Paola De Agostini, Silvia De Poli, Emanuele Dicarlo, Maria Flevotomou, et al. Inflation, fiscal policy and inequality. The distributional impact of fiscal measures to compensate for consumer inflation. Madrid: Banco de España, May 2024. http://dx.doi.org/10.53479/36624.
Full textAbstract:
This paper analyses the distributional impact of high consumer inflation in the euro area and government measures to compensate households in 2022. The study uses the tax-benefit microsimulation model for the European Union (EUROMOD) with microdata as the input – EU statistics on income and living conditions (EU-SILC) and household budget surveys (HBS) – to quantify the distributional impact of inflation, income support measures and measures aimed at containing prices. The analysis confirms that purchasing power and welfare were more severely affected by the 2022 inflation surge among lower-income households than among higher-income households. Fiscal measures compensated households for about a third of their welfare loss, though with significant differences across countries. At the same time, fiscal measures reduced the inequality gap between lower and higher-income households by around 60%. Most fiscal measures were not particularly well targeted at low-income households, resulting in a higher than necessary fiscal burden to cushion the distributional impact of the inflationary shock.
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Taylor, S., J. Lever, K. Burgess, R. Stroud, D. Brownlee, L. Nittler, A. Bardyn, et al. Sampling interplanetary dust from Antarctic air. Engineer Research and Development Center (U.S.), February 2022. http://dx.doi.org/10.21079/11681/43345.
Full textAbstract:
We built a collector to filter interplanetary dust particles (IDPs) larger than 5 µm from the clean air at the Amundsen Scott South Pole station. Our sampling strategy used long duration, continuous dry filtering of near-surface air in place of short duration, high-speed impact collection on flags flown in the stratosphere. We filtered ~107 m³ of clean Antarctic air through 20 cm diameter, 3 µm filters coupled to a suction blower of modest power consumption (5–6 kW). Our collector ran continuously for 2 years and yielded 41 filters for analyses. Based on stratospheric concentrations, we predicted that each month’s collection would provide 300–900 IDPs for analysis. We identified 19 extraterrestrial (ET) particles on the 66 cm² of filter examined, which represented ~0.5% of the exposed filter surfaces. The 11 ET particles larger than 5 µm yield about a fifth of the expected flux based on >5 µm stratospheric ET particle flux. Of the 19 ET particles identified, four were chondritic porous IDPs, seven were FeNiS beads, two were FeNi grains, and six were chondritic material with FeNiS components. Most were <10 µm in diameter and none were cluster particles. Additionally, a carbon-rich candidate particle was found to have a small ¹⁵N isotopic enrichment, supporting an ET origin. Many other candidate grains, including chondritic glasses and C-rich particles with Mg and Si and FeS grains, require further analysis to determine if they are ET. The vast majority of exposed filter surfaces remain to be examined.
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Micco, Alejandro, and Natalia Pérez. Determinants of Maritime Transport Costs. Inter-American Development Bank, April 2002. http://dx.doi.org/10.18235/0011324.
Full textAbstract:
Recent literature has emphasized the importance of transport costs and infrastructure in explaining trade, access to markets, and increases in per capita income. For most Latin American countries, transport costs are a greater barrier to U.S. markets than import tariffs. The authors investigate the determinants of shipping costs to the U.S. with a large database of more than 300,000 observations per year on shipments of products at the six-digit HS level from different ports around the world. In addition, the authors find that efficiency of ports is an important determinant of shipping costs. Inefficient ports also increase handling costs, which are one of the components of shipping costs. The authors try to explain variations in port efficiency and find that they are linked to excessive regulation, the prevalence of organized crime, and the general condition of the country's infrastructure. Finally, the authors present a number of success stories in Latin America to show that private involvement in port management leads to efficiency and lower costs whenever it is accompanied by labor reform, and when monopoly power is reduced through either regulation or competition.
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Weinschenk, Craig, Daniel Madrzykowski, and Paul Courtney. Impact of Flashover Fire Conditions on Exposed Energized Electrical Cords and Cables. UL Firefighter Safety Research Institute, October 2019. http://dx.doi.org/10.54206/102376/hdmn5904.
Full textAbstract:
A set of experiments was conducted to expose different types of energized electrical cords for lamps, office equipment, and appliances to a developing room fire exposure. All of the cords were positioned on the floor and arranged in a manner to receive a similar thermal exposure. Six types of cords commonly used as power supply cords, extension cords, and as part of residential electrical wiring systems were chosen for the experiments. The non-metallic sheathed cables (NMB) typically found in residential electrical branch wiring were included to provide a link to previous research. The basic test design was to expose the six different types of cords, on the floor of a compartment to a growing fire to determine the conditions under which the cord would trip the circuit breaker and/or undergo an arc fault. All of the cords would be energized and installed on a non-combustible surface. Six cord types (18-2 SPT1, 16-3 SJTW, 12-2 NM-B, 12-3 NM-B, 18-3 SVT, 18-2 NISPT-2) and three types of circuit protection (Molded case circuit breaker (MCCB), combination Arc-fault circuit interrupter (AFCI), Ground-fault circuit interrupter (GFCI)) were exposed to six room-scale fires. The circuit protection was remote from the thermal exposure. The six room fires consisted of three replicate fires with two sofas as the main fuel source, two replicate fires with one sofa as the main fuel source and one fire with two sofas and MDF paneling on three walls in the room. Each fuel package was sufficient to support flashover conditions in the room and as a result, the impact on the cords and circuit protection was not significantly different. The average peak heat release rate of the sofa fueled compartment fires with gypsum board ceiling and walls was 6.8 MW. The addition of vinyl covered MDF wall paneling on three of the compartment walls increased the peak heat release rate to 12 MW, although most of the increased energy release occurred outside of the compartment opening. In each experiment during post flashover exposure, the insulation on the cords ignited and burned through, exposing bare conductor. During this period the circuits faulted. The circuit protection devices are not designed to provide thermal protection, and, thus, were installed remote from the fire. The devices operated as designed in all experiments. All of the circuit faults resulted in either a magnetic trip of the conventional circuit breaker or a ground-fault trip in the GFCI or AFCI capable circuit protection devices. Though not required by UL 1699, Standard for Safety for Arc-Fault Circuit-Interrupters as the solution for detection methodology, the AFCIs used had differential current detection. Examination of signal data showed that the only cord types that tripped with a fault to ground were the insulated conductors in non-metallic sheathed cables (12-2 NM-B and 12-3 NM-B). This was expected due to the bare grounding conductor present. Assessments of both the thermal exposure and physical damage to the cords did not reveal any correlation between the thermal exposure, cord damage, and trip type.
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Eberle, Caitlyn, Jack O'Connor, Liliana Narvaez, Melisa Mena Benavides, and Zita Sebesvari. Interconnected Disaster Risks 2023: Risk Tipping Points. United Nations University - Institute for Environment and Human Security (UNU-EHS), October 2023. http://dx.doi.org/10.53324/wtwn2495.
Full textAbstract:
The 2023 Interconnected Disaster Risks report examines six immediate and increasing risks across the world: the accelerating extinctions of species, the depletion of groundwater resources, the retreat of mountain glaciers, the growing number of places facing uninhabitable temperatures, the rise in uninsurability and the growing amount of space debris. Through literature review and expert consultation, we define “risk tipping points” for each of the six cases, representing the point at which a given socioecological system ceases to buffer risks and to provide its expected functions, after which the risk of catastrophic impacts to the system increases substantially. Our analysis also includes a highlight on the interconnectivity of root causes and drivers that are pushing these systems to their tipping point, as well as their influence on each other and compounding and cascading impacts into other systems, now and in the future. Our findings indicate that human actions are causing these increased risks, and we discuss the potential behavior and value changes that will be necessary to address them. This report also proposes a new framework to classify and discuss the effectiveness of solutions that help us address risk tipping points. Solutions fall into two main categories: Avoid solutions that target root causes and drivers of risk to avoid crossing risk tipping points altogether, and adapt solutions that help us to prepare or to better address the negative impacts of risk tipping point in case they cannot be avoided, and seek to adapt to the resulting changes in an attempt to live with them. Within each category, there are two options for actions: Delay actions work within the existing “business as usual” system and seek to slow down the progression towards risk tipping points or possible worst impacts. Transform actions involve a fundamental re-imagining of the system itself. Out of the different categories, it is transformative solutions that have the potential to move us away from a future of multiplying risk tipping points, but they also require the most societal and personal change. Therefore, the report highlights overall changes we can make to our behaviours and values that would transform the way we use our systems and reduce overall risk. These include a shift towards zero waste, a closer connection to nature, global cooperation and trust, consideration for future generations, and shifting to an economic model that is less focused on growth and more on human well-being within planetary boundaries. Addressing risk tipping points requires us to fundamentally change how we perceive and value the world around us in a way that gives us the responsibility to care for it. We must design our systems to work in a way that recognizes how much we need the world and all its systems working together for our survival; otherwise, we will find ourselves in a future where risks continue to multiply. The choice is ours. We have the power to act now to create the future we want.
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Nikula, Blair, and Robert Cook. Status and distribution of Odonates at Cape Cod National Seashore. National Park Service, 2024. http://dx.doi.org/10.36967/2303254.
Full textAbstract:
Odonates are significant components of most wetland habitats and important indicators of their health. At Cape Cod National Seashore (CACO), we compiled odonate records dating back to the 1980s and, based partly on that data, identified 41 wetland sites for sampling, representing six freshwater habitats (kettle pond, inter-dune pond, dune slack, riparian marsh, vernal pool, and bog). We surveyed these sites for adult odonates during the 2016?2018 field seasons. Ten sites were surveyed all three years (total 19-20 surveys/site); all ten had at least some historical data. The remaining 31 sites were surveyed for one field season, a total of 6-8 times each. We conducted 391 surveys, recording 53,435 individuals and 74 species (45 dragonflies and 29 damselflies); not all individuals were identified to species. Abundance and species richness varied significantly between habitats. For all individuals recorded, abundance was greatest at vernal pools and kettle ponds. Riparian sites had the lowest abundance. Species richness was highest at kettle ponds, including several species of conservation concern, two listed as Threatened by the state of Massachusetts. Riparian marshes and dune slacks had relatively low richness. Among the 10 sites surveyed three years, we found significant annual variation in abundance and species richness. There was significant and generally greater between-site variation in abundance within a year than between years at sites. Community analysis found pond depth, habitat type, and presence of predaceous fish were significant factors explaining between-site variation in community composition. Habitats also differed significantly in community composition. Multidimensional scaling showed sites tend to cluster together by habitat type. Vernal ponds have the highest average community similarity to all other habitats (53.5%), with dune slack (52.9%), bog (52.0%) and inter-dune (51.5%) close behind. In contrast, riparian sites (46.3%) and kettle ponds (39.5%) are least similar to other habitats. Overall, 86 species of odonates have been recorded at CACO, a rich and diverse assemblage reflecting the variety and quality of freshwater habitats present. Although these habitats are relatively well-protected, stressors include climate change, nutrient inflow from adjacent development, road runoff, and trampling of emergent vegetation. A plan for monitoring is beyond the scope of this project. Ideally, it would be best to use the insight into odonate variation obtained from these surveys to develop a monitoring program designed to meet standards of statistical confidence and power currently employed in NPS monitoring programs.