Journal articles: 'SiC power device'

1

Harris, C. I., A. O. Konstantinov, C. Hallin, and E. Janzén. "SiC power device passivation using porous SiC." Applied Physics Letters 66, no. 12 (March 20, 1995): 1501–2. http://dx.doi.org/10.1063/1.113668.

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Lichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen, and John W. Palmour. "Performance and Reliability of SiC Power MOSFETs." MRS Advances 1, no. 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.

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ABSTRACTDue to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings, and with lower switching losses. Silicon carbide power MOSFET development has progressed rapidly since the market release of Cree’s 1200V 4H-SiC power MOSFET in 2011. This is due to continued advancements in SiC substrate quality, epitaxial growth capabilities, and device processing. For example, high-quality epitaxial growth of thick, low-doped SiC has enabled the fabrication of SiC MOSFETs capable of blocking extremely high voltages (up to 15kV); while dopant control for thin highly-doped epitaxial layers has helped enable low on-resistance 900V SiC MOSFET production. Device design and processing improvements have resulted in lower MOSFET specific on-resistance for each successive device generation. SiC MOSFETs have been shown to have a long device lifetime, based on the results of accelerated lifetime testing, such as high-temperature reverse-bias (HTRB) stress and time-dependent dielectric breakdown (TDDB).

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Chow, T. Paul. "SiC Bipolar Power Devices." MRS Bulletin 30, no. 4 (April 2005): 299–304. http://dx.doi.org/10.1557/mrs2005.77.

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AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.

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van Zeghbroeck, Bart, and Hamid Fardi. "Comparison of 3C-SiC and 4H-SiC Power MOSFETs." Materials Science Forum 924 (June 2018): 774–77. http://dx.doi.org/10.4028/www.scientific.net/msf.924.774.

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A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation. This includes the bulk mobility as a function of doping density, the breakdown field as a function of doping and the MOSFET channel mobility. A device model was constructed and then used to calculate the on-resistance and breakdown voltage of a properly scaled device as a function of the doping density of the blocking layer. A SPICE model was constructed to explore the switching transients and switching losses. The simulations indicate that, for the chosen material parameters, a 600 V 3C-SiC MOSFET has an on-resistance, which is less than half that of a 4H-SiC MOSFET as are the switching losses in the device.

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Friedrichs, Peter. "SiC Power Devices as Enabler for High Power Density - Aspects and Prospects." Materials Science Forum 778-780 (February 2014): 1104–9. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1104.

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Comparable to silicon the main way to improve the cost performance of SiC power devices is to go up with current density since the main selling point of a power device is its current handling capability. To follow this path successfully a couple of application and system relevant aspects should be taken into account beside the pure focus on reducing nominal or absolute losses at chip level. This paper will address some of those topics in combination with discussing state of the art device technologies on SiC. Also some considerations regarding the operation of SiC devices at elevated temperatures will be given, mainly targeting for increased power density and reduced losses in power electronic systems.

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Palmer, Michael J., R. Wayne Johnson, Tracy Autry, Rizal Aguirre, Victor Lee, and James D. Scofield. "SiC Power Switch Module." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000316–24. http://dx.doi.org/10.4071/hitec-rwjohnson-wp26.

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A hermetic, multichip power package for silicon carbide devices that will operate in a 200°C ambient and switch 50 to 100 amps has been developed. The Al2O3/MoCu structure, upon which the SiC JFETs and diodes have been attached, was designed in a manner to hermetically seal the device areas. Details of the materials and processes used to fabricate the package are discussed. Die attach, ribbon bonding and lid attach are also described.

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Soelkner, Gerald, Winfried Kaindl, Michael Treu, and Dethard Peters. "Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure." Materials Science Forum 556-557 (September 2007): 851–56. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.851.

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Cosmic radiation has been identified as a decisive factor for power device reliability. Energetic neutrons create ionizing recoils within the semiconductor substrate which may lead to device burnout. While this failure mode has gained widespread acceptance for power devices based on silicon the question whether a similar mechanism could also lead to failure of SiC devices was left to be debated. Radiation hardness intrinsic to the SiC material was generally assumed but as experimental data was scarce reliability problems due to radiation-induced device failure could not be ruled out. Recent accelerated testing results now show that cosmic radiation will indeed affect the reliability of SiC power devices, as it is the case for its silicon counterpart, but the problem can be contained very effectively by device design.

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Al-bayati, Ali Mahmoud Salman. "Behavior, Switching Losses, and Efficiency Enhancement Potentials of 1200 V SiC Power Devices for Hard-Switched Power Converters." CPSS Transactions on Power Electronics and Applications 7, no. 2 (June 30, 2022): 113–29. http://dx.doi.org/10.24295/cpsstpea.2022.00011.

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Semiconductor power devices are the major constituents of any power conversion system. These systems are faced by many circumscriptions due to the operating constraints of silicon (Si) based semiconductors under certain conditions. The emergence and persistence evolution of wide bandgap technology pledge to transcend the restrictions imposed by Si based semiconductors. This paper presents a thorough experimental study and assessment of the performance of three power devices: 1200 V SiC cascode, 1200 V SiC MOSFET, and 1200 V Si IGBT under the same hardware setup. The study aims to capture the major attributes for each power device toward determining their realistic potential applications. The switching performance of each power device is studied and reported. As the gate resistance is a crucial factor in a power device characterization, an extensive analysis of hard-switching losses under different separated turn-on and turn-off gate resistances is also performed and discussed. To appraise the fast switching capability, the switching dv/dts and di/dts are measured and analyzed for each power device. Furthermore, insights are provided about the dependency of switching energy losses on the power device current and blocking voltage. This paper also focuses on evaluating the operations and the performances of these power devices in a hard-switched dc-dc converter topology. While using of 1200 V SiC Schottky diode in the converter design with each power device, the high switching frequency operations and efficiency of the converter are reported and thoroughly explored. The SiC cascode exhibited superior performance when compared to the other two power devices. The results and analyses represent guidelines and prospects for designing advanced power conversion systems.

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Walden, Ginger G., Ty McNutt, Marc Sherwin, Stephen Van Campen, Ranbir Singh, and Rob Howell. "Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion." Materials Science Forum 600-603 (September 2008): 1139–42. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1139.

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For the first time, large area 10 kV SiC power devices are being produced capable of yielding power modules for high-frequency megawatt power conversion. To this end, the switching performance and power dissipation of silicon carbide (SiC) n-channel IGBTs and MOSFETs are evaluated using numerical simulations software over an extended current range to determine the best device suitable for 10 kV applications. Each device is also optimized for minimal forward voltage drop in the on-state.

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Chowdhury, Sauvik, Zachary Stum, Zhong Da Li, Katsunori Ueno, and T. Paul Chow. "Comparison of 600V Si, SiC and GaN Power Devices." Materials Science Forum 778-780 (February 2014): 971–74. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.971.

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In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.

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Vobecký, Jan. "The current status of power semiconductors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.

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Trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. Well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like MOSFET, IGBT, IGCT and PCT. Silicon carbide (SiC) and gallium nitride (GaN) are striving to take over that of the silicon. The most relevant SiC device is the MPS (JBS) diode, followed by MOSFET and JFET. GaN devices are represented by lateral HEMT. While the long term reliability of silicon devices is well trusted, the SiC MOSFETs and GaN HEMTs are struggling to achieve a similar confidence. Two order higher cost of SiC equivalent functional performance at device level limits their application to specific cases, but their number is growing. Next five years will therefore see the co-existence of these technologies. Silicon will continue to occupy most of applications and dominate the high-power sector. The wide bandgap devices will expand mainly in the 600 - 1200 V range and dominate the research regardless of the voltage class.

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Green, Ronald, Aivars J. Lelis, and Daniel B. Habersat. "Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing." Materials Science Forum 717-720 (May 2012): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1085.

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Threshold voltage (VT) instability remains an important issue for the performance, reliability, and qualification of SiC power MOSFET devices. The direct application of existing reliability test standards to SiC power MOSFETs can in some cases result in an inconsistent pass/fail response for a given device. To ensure SiC MOSFET device reliability, some modifications to existing test methods may be necessary..

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Furubayashi, Yutaka, Takafumi Tanehira, Kei Yonemori, Nobuhide Seo, and Shinichiro Kuroki. "3D Integration of Si-Based Peltier Device onto 4H-SiC Power Device." Materials Science Forum 858 (May 2016): 1107–11. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1107.

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We propose 3-D integration of Peltier device onto a power device. In order to transport a heat from the power device, as a suitable material of the Peltier device, silicon was adopted because of its high Seebeck coefficient, high thermal conductivity, and applicability to semiconductor process. Bulk Si-based Peltier devices with conventional shape showed an active thermal transport over a Joule heat at the operation current less than 5 A. 3-D integration of 4H-SiC-based Schottky barrier diodes and Si-based film Peltier device, separated by intrinsic SiC layer, was realized by using conventional Si-based process flow.

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Tournier, Dominique, Miquel Vellvehi, Phillippe Godignon, Josep Montserrat, Dominique Planson, and F. Sarrus. "Current Sensing for SiC Power Devices." Materials Science Forum 527-529 (October 2006): 1215–18. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1215.

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High voltage, high current capabilities of SiC based devices has been already proved, and high current SiC devices working at high temperature are likely to be on the market soon. SiC power integration will have to be considered as a further development step to discrete power devices. Packaging and device integrated protections remain the main constraints for high temperature operation and system integration. In case of short-circuit or over-current, SiC devices can reach high temperature values, and the die might be subjected to high stresses. In order to address such critical requirements, current sensing and real time temperature monitoring are mandatory. The structure proposed in this paper, derived from Si technology, provides a protection feature to SiC power devices to get reliable high temperature electronics. Concretely, an integrated current sensor has been implemented in a vertical power SiC JFET and its fabrication is reported for the first time. The current sensor layout and process technology are presented. An experimental current sensing validation is also reported.

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OZPINECI, BURAK, LEON M. TOLBERT, SYED K. ISLAM, and MD HASANUZZAMAN. "SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 439–48. http://dx.doi.org/10.1142/s0129156402001368.

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The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvements in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of SiC research at Oak Ridge National Laboratory (ORNL) including SiC device design and system modeling studies, will be given.

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Phlips, Bernard F., Karl D. Hobart, Francis J. Kub, Robert E. Stahlbush, Mrinal K. Das, Gianluigi De Geronimo, and Paul O' Connor. "Silicon Carbide Power Diodes as Radiation Detectors." Materials Science Forum 527-529 (October 2006): 1465–68. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1465.

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We have tested the radiation detection performance of Silicon Carbide (SiC) PIN diodes originally developed as high power diodes. These devices consist of 100 micron thick SiC grown epitaxially on SiC substrates. The size and thickness of the devices make them appropriate for a number of radiation detection applications. We tested 0.25 cm2 and 0.5 cm2 devices and obtained X-ray spectra under illumination with an Am-241 radioactive source. The spectra showed an energy resolution that was consistent with the resolution expected for the large capacitance of the device. Smaller devices with a diameter of 1 mm were also tested and produced spectra with a room temperature energy resolution of ~550 eV, which is consistent with the electronics limit for the capacitance of the small device. We measured the absolute charge generated by X-rays per KeV in SiC by comparing the charge generation with similar silicon devices and determined the energy required per electron hole pair in SiC to be 8.4 eV. We also performed radiation damage tests on these devices and found no significant loss in charge collection up to a photon dose of 100 MRad. Applications for these devices can be found in the fields of particle physics, nuclear physics, nuclear medicine, X-ray fluorescence, X-ray astronomy and X-ray navigation.

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Radhakrishnan, Rahul, Tony Witt, Seungchul Lee, and Richard Woodin. "Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters." Materials Science Forum 858 (May 2016): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.858.177.

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Optimized design of Silicon Carbide (SiC) power devices depends, besides power device physics, also on consideration of basic properties and technological readiness of the material. This paper presents a novel analysis of the dependence of variation of epitaxial doping and thickness on the determination of the optimum design point of SiC devices. We introduce electric field at epitaxy-substrate interface as a useful parameter in controlling the dependence of device parameters on epitaxy. Using this method as criterion for design can improve the robustness of SiC devices to epitaxial variation and hence the process yield.

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Ikpe, Stanley A., Jean-Marie Lauenstein, Gregory A. Carr, Don Hunter, Lawrence L. Ludwig, William Wood, Linda Y. Del Castillo, Mohammad M. Mojarradi, Fred Fitzpatrick, and Yuan Chen. "Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (January 1, 2016): 000184–89. http://dx.doi.org/10.4071/2016-hitec-184.

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Abstract Silicon-Carbide (SiC) device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon (Si) counterpart, SiC offers a greater possibility for high powered switching applications in extreme environment. In particular, SiC Metal-Oxide-Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing SiC power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

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Maralani, Ayden, Wei Cheng Lien, Nuo Zhang, and A. P. Pisano. "Silicon Carbide Transistors for IC Design Applications up to 600 °C." Materials Science Forum 778-780 (February 2014): 1126–29. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1126.

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Low power Silicon Carbide (SiC) devices and Integrated Circuits (ICs) in conjunction with SiC or Aluminum Nitride (AlN) sensing elements will enable sensing functions in high temperature environments up to 600 °C where no silicon based devices or circuits have been able to survive in that temperature range. In power electronics applications, existence of low power SiC devices and IC technologies will significantly aid the development of high power density power modules in which total weights and cooling systems sizes are reduced. This paper will be evaluating the performances of the fabricated low power SiC device candidates (JFET and BJT) for SiC-based analog ICs design for high temperature and power electronics applications.

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Potbhare, Siddharth, Neil Goldsman, Akin Akturk, and Aivars J. Lelis. "Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter." Materials Science Forum 645-648 (April 2010): 1163–66. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1163.

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We present detailed mixed-mode simulations of a DC-DC converter based on 4H-SiC DMOSFETs. The mixed-mode modeling enables the use of complex physics based models for the interface trap occupation and surface mobility that are typical for 4H-SiC devices, and apply them to a practical circuit application such as a DC-DC boost converter. The mixed mode simulations are performed for a reduced DC-DC converter circuit to evaluate the performance of the DMOSFET when it has an inductive load. The current inside the device and its power dissipation during switching are evaluated numerically. Further, the mixed-mode device simulation shows that the majority carriers (electrons) inside the 4H-SiC DMOSFET require a finite time to go from the ON (strongly inverted) to the OFF (depleted) state, thereby causing power dissipation and heating during the turn-off period. The peak power is dissipated in the JFET region of the device which indicates that maximum heat and therefore maximum temperature may be generated there.

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Potbhare, Siddharth, Akin Akturk, Neil Goldsman, James M. McGarrity, and Anant Agarwal. "Modeling and Design of High Temperature Silicon Carbide DMOSFET Based Medium Power DC-DC Converter." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000144–51. http://dx.doi.org/10.4071/hitec-spotbhare-tp22.

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Silicon Carbide (SiC) is a promising new material for high power high temperature electronics applications. SiC Schottky diodes are already finding wide acceptance in designing high efficiency power electronic systems. We present TCAD and Verilog-A based modeling of SiC DMOSFET, and the design and analysis of a medium power DC-DC converter designed using SiC power DMOSFETs and SiC Schottky diodes. The system is designed as a 300W boost converter with a 12V input and 24V/36V outputs. The SiC power converter is compared to another designed with commercially available Silicon power devices to evaluate power dissipation in the DMOSFETs, transient response of the system and its conversion efficiency. SiC DMOSFETs are characterized at high temperature by developing temperature dependent TCAD and Verilog-A models for the device. Detailed TCAD modeling allows probing inside the device for understanding the physical processes of transport, whereas Verilog-A modeling allows us to define the complex relationship of interface traps and surface physics that is typical to SiC DMOSFETs in a compact analytical format that is suitable for inclusion in commercially available circuit simulators.

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Kodolitsch, E., V. Sodan, M. Krieger, and N. Tsavdaris. "Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices." Materials Science Forum 1062 (May 31, 2022): 49–53. http://dx.doi.org/10.4028/p-f26rb5.

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In this work we report on the impact of various crystalline defects present in 4H-SiC epitaxial layers on the electrical blocking characteristics of SiC power devices. Dedicated test structures were fabricated and electrically characterized in reverse bias mode. SiC substrate and epitaxial crystal defects, as well defects due to front-end processing were detected and classified using commercial inspection tools. Devices with a single defect-type were studied which leads to a direct correlation of the leakage current spot position within the device and the obtained blocking characteristics. This gives a better understanding of each crystal defect impact on device ́s performance which leads to an improvement in the reliability and cost reduction of SiC power devices.

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Guo, Jianing. "Analysis of Current Imbalance in Paralleled Silicon Carbide Power MOSFETs." Academic Journal of Science and Technology 3, no. 3 (November 22, 2022): 247–54. http://dx.doi.org/10.54097/ajst.v3i3.2992.

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In order to adapt to the application scenarios of high power variable current, it is an effective solution to parallel multiple silicon carbide (SiC) power. However, the static parameters of SiC MOSFET devices are dispersed, the parasitic parameters of power loop are asymmetric, and the working junction temperature of the devices is different. All these factors will lead to non-uniform current stress between parallel devices.This article is based on the SiC MOSFET device provided in Wolfspeed,to explore the impact of circuit parameters mismatch on current sharing in parallel components. The influence of the circuit parameters on the static and dynamic current sharing of the parallel SiC MOSFET device is obtained, and the influence of each factor on the specific process is summarized, and the most influential factor on the current change in the case of parameter mismatch is compared.

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Tezuka, Kazuo, Tatsurou Tsuyuki, Saburou Shimizu, Shinichi Nakamata, Takashi Tsuji, Noriyuki Iwamuro, Shinsuke Harada, Kenji Fukuda, and Hiroshi Kimura. "High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices." Materials Science Forum 717-720 (May 2012): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.821.

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In this paper, we demonstrate the fabrication of SBD utilizing SiC process line specially designed for mass production of SiC power device. In SiC power device process, ion implantation and activation annealing are key technologies. Details of ion implantation system and activation annealing system designed for SiC power device production are shown. Further, device characteristics of SBD fabricated using this production line is also shown briefly.

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SUGAWARA, YOSHITAKA. "Progress of Power Semiconductor Devices. 5. Recent Development of SiC Power Device." Journal of the Institute of Electrical Engineers of Japan 118, no. 5 (1998): 282–85. http://dx.doi.org/10.1541/ieejjournal.118.282.

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Holz, Matthias, Jochen Hilsenbeck, Ralf Otremba, Alexander Heinrich, Peter Türkes, and Roland Rupp. "SiC Power Devices: Product Improvement Using Diffusion Soldering." Materials Science Forum 615-617 (March 2009): 613–16. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.613.

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SiC power devices have reached a high market penetration, especially for high-voltage applications like switch mode power supplies. In the past, however, the superior material properties like, e.g., good thermal conductivity, have often not been put to full use due to the limitations of current packaging techniques. Especially the inferior thermal conductivity of current die attach materials have been an obstacle to realise the full potential of SiC technologies. In this paper, we describe in detail the use of diffusion solder for the die attach of SiC chips. Replacing the conventional solder layer by a thin metal stack for diffusion soldering, the thermal conductivity of the device is significantly improved. In addition, we show the positive impact of diffusion soldering on the assembly process and on the device reliability. These results are interesting for, both, SiC diodes and switches.

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Langpoklakpam, Catherine, An-Chen Liu, Kuo-Hsiung Chu, Lung-Hsing Hsu, Wen-Chung Lee, Shih-Chen Chen, Chia-Wei Sun, Min-Hsiung Shih, Kung-Yen Lee, and Hao-Chung Kuo. "Review of Silicon Carbide Processing for Power MOSFET." Crystals 12, no. 2 (February 11, 2022): 245. http://dx.doi.org/10.3390/cryst12020245.

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Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

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Ryu, Sei Hyung, Sumi Krishnaswami, Mrinal K. Das, Jim Richmond, Anant K. Agarwal, John W. Palmour, and James D. Scofield. "4H-SiC DMOSFETs for High Speed Switching Applications." Materials Science Forum 483-485 (May 2005): 797–800. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.797.

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Due to the high critical field in 4H-SiC, the drain charge and switching loss densities in a SiC power device are approximately 10X higher than that of a silicon device. However, for the same voltage and resistance ratings, the device area is much smaller for the 4H-SiC device. Therefore, the total drain charge and switching losses are much lower for the 4H-SiC power device. A 2.3 kV, 13.5 mW-cm2 4H-SiC power DMOSFET with a device area of 2.1 mm x 2.1 mm has been demonstrated. The device showed a stable avalanche at a drain bias of 2.3 kV, and an on-current of 5 A with a VGS of 20 V and a VDS of 2.6 V. Approximately an order of magnitude lower parasitic capacitance values, as compared to those of commercially available silicon power MOSFETs, were measured for the 4H-SiC power DMOSFET. This suggests that the 4H-SiC DMOSFET can provide an order of magnitude improvement in switching performance in high speed switching applications.

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RYU, SEI-HYUNG, SUMI KRISHNASWAMI, MRINAL DAS, JAMES RICHMOND, ANANT ANANT AGARWAL, JOHN PALMOUR, and JAMES SCOFIELD. "2 KV 4H-SiC DMOSFETS FOR LOW LOSS, HIGH FREQUENCY SWITCHING APPLICATIONS." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 879–83. http://dx.doi.org/10.1142/s0129156404002983.

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Due to the high critical field in 4 H - SiC , the drain charge and switching loss densities in a SiC power device are approximately 10X higher than that of a silicon device. However, for the same voltage and resistance ratings, the device area is much smaller for the 4 H - SiC device. Therefore, the total drain charge and switching losses are much lower for the 4 H - SiC power device. A 2.3 kV, 13.5 mΩ-cm2 4 H - SiC power DMOSFET with a device area of 2.1 mm × 2.1 mm has been demonstrated. The device showed a stable avalanche at a drain bias of 2.3 kV, and an on-current of 5 A with a VGS of 20 V and a VDS of 2.6 V. Approximately an order of magnitude lower parasitic capacitance values, as compared to those of commercially available silicon power MOSFETs, were measured for the 4 H - SiC power DMOSFET. This suggests that the 4 H - SiC DMOSFET can provide an order of magnitude improvement in switching performance in high speed switching applications.

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Richmond, Jim, Sei-Hyung Ryu, Qingchun (Jon) Zhang, Brett Hull, Mrinal Das, Albert Burk, Anant Agarwal, and John Palmour. "Comparison of High Temperature Operation of Silicon Carbide MOSFETs and Bipolar Junction Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000136–43. http://dx.doi.org/10.4071/hitec-jrichmond-tp21.

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Power devices based on Silicon Carbide (SiC) have unmatched potential for extending the operational temperature range of power electronics well past what is possible with silicon devices. SiC JBS diodes are already demonstrating part of that potential but the full benefit will not be realized until a SiC power switch is available. Recently, normally off SiC unipolar and bipolar switching devices have become available with the manufacture of 1200V, 20A MOSFETs and 1200V, 20A bipolar junction transistors (BJT). While both of these device types have undergone considerable study, most of this characterization has been conducted in the normal commercial temperature range which has an upper limit of 150 – 175°C. The SiC BJT is considered to be a superior device for high temperature operation due to its lower on-state voltage and increased reliability due to it not having a gate oxide. As presented, the advantages of the SiC BJT over the SiC MOSFET are not as great as expected and may not warrant the increased complexity of dealing with the current driven base that the BJT requires. Otherwise, both devices offer exceptional performance at high temperature.

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Cheng, Lin, John W. Palmour, Anant K. Agarwal, Scott T. Allen, Edward V. Brunt, Gang Yao Wang, Vipindas Pala, et al. "Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings." Materials Science Forum 778-780 (February 2014): 1089–95. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1089.

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Advanced high-voltage (≥10 kV) silicon carbide (SiC) devices described in this paper have the potential to significantly impact the system size, weight, high-temperature reliability, and cost of modern variable-speed medium-voltage (MV) systems such as variable speed (VSD) drives for electric motors, integration of renewable energy including energy storage, micro-grids, traction control, and compact pulsed power systems. In this paper, we review the current status of the development of 10 kV-20 kV class power devices in SiC, including MOSFETs, JBS diodes, IGBTs, GTO thyristors, and PiN diodes at Cree. Advantages and weakness of each device are discussed and compared. A strategy for high-voltage SiC power device development is proposed.

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32

Gudjónsson, G., Fredrik Allerstam, Per Åke Nilsson, Hans Hjelmgren, Einar Ö. Sveinbjörnsson, Herbert Zirath, T. Rödle, and R. Jos. "High Frequency 4H-SiC MOSFETs." Materials Science Forum 556-557 (September 2007): 795–98. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.795.

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We present new results on 4H-SiC RF power MOSFETs. By improvements in device layout we obtain better high frequency performance compared to the first generation of devices. An extrinsic transition frequency fT=11.4 GHz was achieved and fmax=11.2 GHz for a device with 0.5 µm nominal channel length. Functional devices with 0.3 µm nominal channel length were also made. These devices gave fT=15.1 GHz and fmax=19.5 GHz but they have lower breakdown voltages and therefore lower overall performance. The measured devices are double fingered with 0.8 mm total gate width.

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Rueschenschmidt, Kathrin, Michael Treu, Roland Rupp, Peter Friedrichs, Rudolf Elpelt, Dethard Peters, and Peter Blaschitz. "SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch." Materials Science Forum 600-603 (September 2008): 901–6. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.901.

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Today a main focus in high efficiency power electronics based on silicon carbide (SiC) lies on the development of an unipolar SiC switch. This paper comments on the advantages of SiC switching devices in comparison to silicon (Si) switches, the decision for the SiC JFET against the SiC MOSFET, and will show new experimental results on SiC JFETs with focus on the production related topics like process window and parameter homogeneity which can be achieved with the presented device concept. Due to material properties unipolar SiC switches have, other than their Si high voltage counterparts, very low gate charge, good body diode performance, and reduced switching losses because of the potential of lower in- and output capacitances. The most common unipolar switch is the MOSFET. However, the big challenge in the case of a SiC MOSFET is the gate oxide. A gate oxide on SiC that provides adequate performance and reliability is missing until now. An alternative unipolar switching device is a normally-on JFET. The normally-on behavior is a benefit for current driven applications. If a normally-off behavior is necessary the JFET can be used together with a low voltage Si MOSFET in a cascode arrangement. Recently manufactured SiC JFETs show results in very good accordance to device simulation and demonstrate the possibility to fabricate a SiC JFET within a mass production. A growing market opportunity for such a SiC switch becomes visible.

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Marek, Juraj, Jozef Kozarik, Michal Minarik, Aleš Chvála, Matej Matus, Martin Donoval, Lubica Stuchlikova, and Martin Weis. "Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress." Materials 15, no. 22 (November 19, 2022): 8230. http://dx.doi.org/10.3390/ma15228230.

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Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge. Here we investigate the reliability of commercial 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching (UIS). The stress invoked degradation of the device characteristics, including the output and transfer characteristics, drain leakage current, and capacitance characteristics. Besides the shift of steady-state electrical characteristics, a significant change in switching times points out the charge trapping phenomenon. Transient capacitance spectroscopy was applied to investigate charge traps in the virgin device as well as after UIS stress. The intrinsic traps due to metal impurities or Z1,2 transitions were recognized in the virgin device. The UIS stress caused suppression of the second stage of the Z1,2 transition, and only the first stage, Z10, was observed. Hence, the UIS stress is causing the reduction of multiple charging of carbon vacancies in SiC-based devices.

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Iwamuro, Noriyuki. "Recent Progress of SiC MOSFET Devices." Materials Science Forum 954 (May 2019): 90–98. http://dx.doi.org/10.4028/www.scientific.net/msf.954.90.

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SiC MOSFETs are superior candidates as next power semiconductor devices for many power transform systems. Owing to high requirement of stability for the whole application systems, it is essential to explore the optimized structures and operations for SiC MOSFETs with not only the extremely low on resistance but also much higher robustness. Overview on recent device technologies of SiC MOSFETs is given.

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BAKIN, ANDREY S. "SiC HOMOEPITAXY AND HETEROEPITAXY." International Journal of High Speed Electronics and Systems 15, no. 04 (December 2005): 747–80. http://dx.doi.org/10.1142/s0129156405003417.

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SiC bulk material quality and surface preparation do not satisfy all the requirements for direct device production. It is necessary to have high quality thick epitaxial layers with low background doping concentration for the fabrication of SiC high power, high voltage, high frequency devices. Different aspects of SiC homo- and heteroepitaxial growth are discussed in this chapter. The wafer surface has a large impact on epitaxial layers, heterostructures and finally on device properties. Thus wafer processing before epitaxial growth is discussed in detail.

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Hazdra, Pavel, Stanislav Popelka, Vít Záhlava, and Jan Vobecký. "Radiation Damage in 4H-SiC and its Effect on Power Device Characteristics." Solid State Phenomena 242 (October 2015): 421–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.421.

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The effect of neutron, electron and ion irradiation on electrical characteristics of unipolar 1700V SiC power devices (JBS diodes, JFETs and MESFETs) was investigated. DLTS investigation showed that above mentioned projectiles introduce similar deep acceptor levels (electron traps) in the SiC bandgap which compensate nitrogen shallow donors and cause majority carrier (electron) removal. The key degradation effect occurring in irradiated devices is the increase of the ON-state resistance which is caused by compensation of the low doped n-type epilayer and simultaneous lowering of electron mobility. In the case of SiC power switches (JFET, MOSFET), these effects are accompanied by the shift of the threshold voltage. Radiation defects introduced in SiC power devices is unstable and some defects anneal out already at operation temperatures (below 175°C). However, this does not have significant effect on device characteristics.

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Cha, Kwang-Hyung, Chang-Tae Ju, and Rae-Young Kim. "Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application." Energies 13, no. 20 (October 14, 2020): 5351. http://dx.doi.org/10.3390/en13205351.

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A device suitability analysis is performed herein by comparing the performance of a silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (MOSFET) and a gallium nitride (GaN) high-electron mobility transistor (HEMT), which are wide-bandgap (WBG) power semiconductor devices in induction heating (IH) systems. The WBG device presents advantages such as high-speed switching owing to its excellent physical properties, and when it is applied to the IH system, a high output power can be achieved through high-frequency driving. To exploit these advantages effectively, a suitability analysis comparing SiC and GaN with IH systems is required. In this study, SiC MOSFET and GaN HEMT are applied to the general half-bridge series resonant converter topology, and comparisons of the conduction loss, switching loss, reverse conduction loss, and thermal performance considering the characteristics of the device and the system conditions are performed. Accordingly, the device suitability in an IH system is analyzed. To verify the device conformance analysis, a resonant converter prototype with SiC and GaN rated at 650 V is constructed. The analysis is verified by an experimental comparison of power loss and thermal performance.

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Treu, M., R. Rupp, P. Blaschitz, and J. Hilsenbeck. "Commercial SiC device processing: Status and requirements with respect to SiC based power devices." Superlattices and Microstructures 40, no. 4-6 (October 2006): 380–87. http://dx.doi.org/10.1016/j.spmi.2006.09.005.

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Das, Mrinal K., Joseph J. Sumakeris, Brett A. Hull, and Jim Richmond. "Evolution of Drift-Free, High Power 4H-SiC PiN Diodes." Materials Science Forum 527-529 (October 2006): 1329–34. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1329.

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The PiN diode is an attractive device to exploit the high power material advantages of 4H-SiC. The combination of high critical field and adequate minority carrier lifetime has enabled devices that block up to 20 kV and carry 25 A. Furthermore, these devices exhibit fast switching with less reverse recovery charge than commercially available Si PiN diodes. The path to commercialization of the 4H-SiC PiN diode technology, however, has been hampered by a fundamental problem with the forward voltage stability resulting from stacking fault growth emanating from basal plane screw dislocations (BPD). In this contribution, we highlight the progress toward producing stable high power devices with sufficient yield to promote commercial interest. Two independent processes, LBPD1 and LBPD2, have been shown to be effective in reducing the BPD density and enhancing the forward voltage stability while being compatible with conventional power device fabrication. Applying the LBPD1 and LBPD2 processes to 10 kV (20 A and 50 A) 4H-SiC PiN diode technology has resulted in a dramatic improvement in the total device yield (forward, reverse, and forward drift yields) from 0% to >20%. The LBPD1 process appears to be more robust in terms of long term forward voltage stability.

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41

Nagao, Shijo, Hirofumi Fujita, Akio Shimoyama, Shinya Seki, Hao Zhang, and Katsuaki Suganuma. "Power cycle reliability of SiC devices with metal-sinter die-attach and thermostable molding." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000008–12. http://dx.doi.org/10.4071/isom-2017-tp12_024.

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Abstract Metal paste sintering die-attach is recently attracting much attention as an alternative to Pb containing high temperature solders, particularly required for power device packaging with post-Si wide band-gap semiconductors. For high voltage and high power devices, which are used in electric vehicles, railway trains, or power grid systems, SiC MSOFET/SBD devices are emerging replacing Si IGBT devices. These SiC devices have two prominent advantages to traditional Si based devices: fast switching and high maximum junction temperature TJ. The excellent characteristics serve for miniaturization of the device module; the former allows to use smaller capacitor and reactors because of the high frequency, and the latter excludes cooling system without affecting the device life time. However, the thermal reliability should be critically tested before used in industrial applications. We have hence conducted comprehensive reliability tests using several types of metal sintering die-attach including Ag and Cu. High temperature storage tests at 250°C certify that the device structure is truly thermostable, and thermal cycling between −50°C and 250°C indicates that the thermomechanical stress caused by device package design is the key for high reliability of power devices. Power cycling demonstrates the usefulness for effective acceleration tests to estimate the device life time. Our results conclude that present metal paste die-attach is ready for use in the product instead of high temperature solders.

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Green, Ronald, Aivars J. Lelis, Mooro El, and Daniel B. Habersat. "Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs." Materials Science Forum 821-823 (June 2015): 677–80. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.677.

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The stability of the threshold voltage of commercial SiC MOSFETs from two device manufactures has been evaluated and compared when subject to positive and negative bias-temperature-stress conditions. For both device groupings, the worse-case stress occurred under negative bias temperature conditions with VGS = –15 V and a stress temperature of 200 °C. Devices in the Vendor A grouping exhibited acceleration in their bias-temperature-stress response that occurred earlier in time as a strong function of stress-temperature and to a lesser degree on gate-bias magnitude. Devices in the Vendor B grouping showed some evidence of acceleration, but only for the worse-case stress condition. Threshold voltage shifts for this device group were very low and extremely stable, with recorded values below 0.4 V for most conditions.

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Ryu, Sei Hyung, Brett A. Hull, Sarit Dhar, L. Cheng, Qing Chun Jon Zhang, Jim Richmond, Mrinal K. Das, et al. "Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs." Materials Science Forum 645-648 (April 2010): 969–74. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.969.

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In this paper, we review the performance, reliability, and robustness of the current 4H-SiC power DMOSFETs. Due to advances in device and materials technology, high power, large area 4H-SiC power DMOSFETs (1200 V, 67 A and 3000 V, 30 A) can be fabricated with reasonable yields. The availability of large area devices has enabled the demonstration of the first MW class, all SiC power modules. Evaluations of 1200 V 4H-SiC DMOSFETs showed that the devices offer avalanche power exceeding those of commercially available silicon power MOSFETs, and have the sufficient short circuit robustness required in most motor drive applications. A recent TDDB study showed that the gate oxides in 4H-SiC MOSFETs have good reliability, with a 100-year lifetime at 375oC if Eox is limited to 3.9 MV/cm. Future work on MOS reliability should be focused on Vth shifts, instead of catastrophic failures of gate oxides.

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Hatakeyama, Tetsuo, Kyoichi Ichinoseki, N. Higuchi, Kenji Fukuda, and Kazuo Arai. "Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System." Materials Science Forum 600-603 (September 2008): 553–56. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.553.

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There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality of SiC wafers for SiC power devices. We have examined whether the laser-based optical non-destructive inspection system by KLA-Tencor meets these requirements. Using this system, incoming inspection of purchased SiC wafers has been performed. The obtained inspection data show that micropipe density is sufficiently low in a device-grade wafer, and therefore, micropipes are not the main cause of device failure. The next challenges for a device-grade SiC wafer are reduction of epitaxial defects and relatively small defects classified as “particles”.

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45

Brinkfeldt, K., T. Åklint, C. Sandberg, P. Johander, and D. Andersson. "High Temperature Packaging for SiC Power Transistors." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 001124–30. http://dx.doi.org/10.4071/isom-2012-thp36.

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Power transistors based on silicon carbide (SiC) are now commercially available. They have a higher efficiency and higher voltage blocking capabilities than conventional silicon devices. The wide-band gap and chemical inertness of SiC makes it suitable to high temperature operation. However, there is a need for new packaging for power transistors that can operate in higher temperatures. We have developed a package based on ceramics and silver for high temperature operation of SiC power transistors. Three types of SiC devices from different manufacturers are packaged and tested in room temperature. Though the devices were still functional after the packaging process, their performance seem to have degraded. This could be a result of the high temperature packaging process and the measurement setup. FEM simulations are also performed to investigate the thermo-mechanical behavior of the package. The target operating temperature of the package is 400 °C. Modeling show stress concentrations at the corners of the device chip and suggests that this stress is decreased if the substrate metallization is changed from copper to silver.

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46

Larkin, D. J. "An Overview of SiC Epitaxial Growth." MRS Bulletin 22, no. 3 (March 1997): 36–41. http://dx.doi.org/10.1557/s0883769400032747.

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SiC electronics research has been driven by the continued successful development of SiC technology for high-power and high-frequency semiconductor devices, and for service in high-temperature, corrosive, and high-radiation environments. The development of this technology has been accelerated by the introduction of commercially available SiC wafers, which have decreased in cost with time. The most recently demonstrated commercial SiC-based products include ultraviolet (uv)-flame sensors for terrestrial turbine engines and high-definition-television transmitter systems utilizing SiC-based transistors. Prototype microelectronic SiC devices include high-voltage Schottky rectifiers and power metal-oxide-semiconductor field-effect transistors, microwave and millimeter-wave devices, and high-temperature, radiation-resistant junction FETs (JFETs). These advancements in SiC-based device technology are attributable to both the successful development of commercially available, bulk SiC substrates and the recent advancements in SiC epitaxial layer growth technologies.

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Scofield, James D., Hiroyuki Kosai, Brett Jordan, Sei Hyung Ryu, Sumi Krishnaswami, Fatima Husna, and Anant K. Agarwal. "High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs." Materials Science Forum 556-557 (September 2007): 991–94. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.991.

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The performance and characterization of SiC JFETs and BJTs, used as inverter switching devices, in a 2 kW, high temperature, 33 kHz, 270-28 V DC-DC converter has been accomplished. SiC and Si power devices were characterized in a phase shifted H-bridge converter topology utilizing novel high temperature powdered ferrite transformer material, high temperature ceramic filter capacitors, SiC rectifiers, and 10 oz. 220oC polyimide printed circuit boards. The SiC devices were observed to provide excellent static and dynamic characteristics at temperatures up to 300oC. SiC JFETs were seen to exhibit on-resistance trends consistent with temperature-mobility kinetics and temperature invariant dynamic loss characteristics. SiC BJTs exhibited positive temperature coefficients (TCE) of VCE and negative β TCEs, with only a 2-fold increase in on-resistance at 300oC. Both SiC power devices possessed fast inductive switching characteristics with τon and τoff ~100-150 ns when driving the transformer load. The SiC converter characteristics were compared to Si-MOSFET H-bridge operation, over its functional temperature range (30-230oC), and highlights the superiority of SiC device technology for extreme environment power applications.

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48

Kaminski, Nando. "Reliability Challenges for SiC Power Devices in Systems and the Impact on Reliability Testing." Materials Science Forum 924 (June 2018): 805–10. http://dx.doi.org/10.4028/www.scientific.net/msf.924.805.

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The reliability of SiC devices remains to be a field of hectic activity because it is one of the obstacles for the ubiquitous application of SiC devices. Without decades of field experience, reliability testing, especially accelerated testing, is the only way to obtain information on reliability during the projected lifespan of the devices. For silicon devices, such tests exist and they are canonized in internationally recognized test standards. For SiC devices, these standards have to be revised and/or supplemented with tests to capture SiC specific degradation mechanisms. On the one hand, this requires a detailed knowledge about the mechanisms but on the other hand, this also requires the mission profile of the devices. In fact, it is not the mission profile of the device that determines its reliability but the mission profile of the chip. This contribution reviews the standard silicon tests useful for SiC devices and looks into additional, SiC specific tests that have been proposed but not yet been recognized as standards.

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Lichtenwalner, Daniel J., Akin Akturk, James McGarrity, Jim Richmond, Thomas Barbieri, Brett Hull, Dave Grider, Scott Allen, and John W. Palmour. "Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout." Materials Science Forum 924 (June 2018): 559–62. http://dx.doi.org/10.4028/www.scientific.net/msf.924.559.

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High-energy neutrons produced by cosmic ray interactions with our atmosphere are known to cause single-event burnout (SEB) failure in power devices operating at high fields. We have performed accelerated high-energy neutron SEB testing of SiC and Si power devices at the Los Alamos Neutron Science Center (LANCSE). Comparing Wolfspeed SiC MOSFETs having different voltage (900V – 3300V) and current (3.5A – 72A) ratings, we find a universal behavior when scaling failure rates by active area, and scaling drain bias by avalanche voltage. Moreover, diodes and MOSFETs behave similarly, revealing that the SiC drift dominates the failure characteristics for both device types. This universal scaling holds for SiC MOSFETs from other manufacturers as well. The SEB characteristics of Si power IGBT and MOSFET devices show that near their rated voltages failure rates of Si devices can be 10X higher than that of comparable SiC MOSFET devices. Thus, Si devices are more susceptible to SEB failure from voltage overshoot conditions.

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Chao, P. C., Kanin Chu, Jose Diaz, Carlton Creamer, Scott Sweetland, Ray Kallaher, Craig McGray, Glen D. Via, and John Blevins. "GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz." MRS Advances 1, no. 2 (2016): 147–55. http://dx.doi.org/10.1557/adv.2016.176.

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ABSTRACTA new device-first low-temperature bonded gallium nitride (GaN)-on-diamond high-electronic mobility transistor (HEMT) technology with state-of-the-art, radio frequency (RF) power performance is described. In this process, the devices were first fabricated on a GaN-on-silicon carbide (SiC) epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivity diamond substrate. Thermal measurements showed that the GaN-on-diamond devices maintained equivalent or lower junction temperatures than their GaN-on-SiC counterparts while delivering more than three-times higher RF power within the same active area. Such results demonstrate that the GaN device transfer process is capable of preserving intrinsic transistor electrical performance while taking advantage of the excellent thermal properties of diamond substrates. Preliminary step-stress and room-temperature, steady-state life testing shows that the low-temperature bonded GaN-on-diamond device has no inherently reliability limiting factor. GaN-on-diamond is ideally suited to wideband electronic warfare (EW) power amplifiers as they are the most thermally challenging due to continuous wave (CW) operation and the reduced power-added efficiency obtained with ultra-wide bandwidth circuit implementations.

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Journal articles on the topic 'SiC power device'

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