Journal articles on the topic 'Si'
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Hirao, Akira, Yushi Ando, and Seiichi Nakahama. "Polymerization of monomers containing functional silyl groups. 12. Anionic polymerization of styrene derivatives para-substituted with pentamethyldisilyl (Si-Si), heptamethyltrisilyl (Si-Si-Si), and nonamethyltetrasilyl (Si-Si-Si-Si) groups." Macromolecular Symposia 95, no. 1 (June 1995): 293–301. http://dx.doi.org/10.1002/masy.19950950125.
Full textMercier, Pierre-Alain, Chantal de Gournay, and Zbigniew Smoreda. "Si loin, si proches." Réseaux 115, no. 5 (2002): 121. http://dx.doi.org/10.3917/res.115.0121.
Full textGénetiot, Alain. "Si lointain, si proche..." Dix-septième siècle 248, no. 3 (2010): 387. http://dx.doi.org/10.3917/dss.103.0387.
Full textBohler, Sébastien. "Si loin, si proche…" Cerveau & Psycho N° 144, no. 6 (June 1, 2022): 3. http://dx.doi.org/10.3917/cerpsy.144.0003.
Full textPotte-Bonneville, Mathieu. "si loin, si proche." Vacarme 48, no. 3 (2009): 52. http://dx.doi.org/10.3917/vaca.048.0052.
Full textMens, Yann. "Si proches, si loin..." Alternatives Internationales 20, no. 1 (January 1, 2005): 28. http://dx.doi.org/10.3917/ai.020.0028.
Full textAlberto, Provenzali. "Si balla? Si, balliamo." EDUCAZIONE SENTIMENTALE, no. 17 (December 2011): 110–14. http://dx.doi.org/10.3280/eds2012-017010.
Full textPrince, Joyce A. "Si, si: Stimulate Imagination." Hispania 68, no. 2 (May 1985): 423. http://dx.doi.org/10.2307/342223.
Full textTorres, Javier Carlos. "Un feliz cumpleaños ¿En si, si#o si#?" ECOS - Revista Científica de Musicoterapia y Disciplinas Afines 6, no. 1 (June 24, 2021): 001. http://dx.doi.org/10.24215/27186199e001.
Full textSanjurjo, Angel, Bernard Wood, Kai Lau, and Gopala Krishnan. "WSi, FeSi, and CuSi interfaces." Scripta Metallurgica et Materialia 31, no. 8 (October 1994): 1019–24. http://dx.doi.org/10.1016/0956-716x(94)90520-7.
Full textWoo, Hee-Gweon, Bo-Hye Kim, and Myong-Shik Cho. "Si-Si/Si-C/Si-O/Si-N Coupling of Hydrosilanes to Useful Silicon-containing Materials." Synlett, no. 5 (2004): 0761–72. http://dx.doi.org/10.1055/s-2004-820016.
Full textGeng, X. H., J. M. Xue, H. C. Ge, H. B. Li, Z. P. Wang, Q. Z. Wang, and H. Z. Ren. "Modeling of a-Si/poly-Si and a-Si/poly-Si/poly-Si stacked solar cells." Solar Energy Materials and Solar Cells 75, no. 3-4 (February 2003): 489–95. http://dx.doi.org/10.1016/s0927-0248(02)00200-3.
Full textZotov, A. V., F. Wittmann, J. Lechner, S. V. Ryzhkov, V. G. Lifshits, and I. Eisele. "Formation of buried a-Si/Al/Si, a-Si/Sb/Si and a-Si/B/Si interfaces and their electrical properties." Journal of Crystal Growth 157, no. 1-4 (December 1995): 344–48. http://dx.doi.org/10.1016/0022-0248(95)00354-1.
Full textMonteil-Bauer, Anne, and Alice-Anne Jeandel. "Si, si, les femmes existent !" L'Observatoire N°56, no. 2 (2020): 45. http://dx.doi.org/10.3917/lobs.056.0045.
Full textSellam, Jérémie. "L’arthrose : si connue, si méconnue." Revue du Rhumatisme Monographies 88, no. 2 (April 2021): 77–78. http://dx.doi.org/10.1016/j.monrhu.2021.03.001.
Full textIshida, Makoto, Kazuaki Sawada, Shinsuke Yamaguchi, Tetsuro Nakamura, and Tetsuo Suzaki. "Heteroepitaxial Si/Al2O3/Si structures." Applied Physics Letters 55, no. 6 (August 7, 1989): 556–58. http://dx.doi.org/10.1063/1.102434.
Full textBommers, S., and H. Schmidbaur. "THE SYNTHESIS OF Si,Si′- BIS(TRISILYLMETHYL)DISILAZANE AND Si,Si′-BIS(TRISILYLMETHYL)DISILYLACETYLENE." Phosphorus, Sulfur, and Silicon and the Related Elements 105, no. 1-4 (August 1995): 171–74. http://dx.doi.org/10.1080/10426509508042060.
Full textĆwil, M., P. Konarski, T. Bieniek, and R. B. Beck. "Si-oxide/Si and Si-oxynitride/Si interfaces analysed by ultra-low energy SIMS." physica status solidi (a) 203, no. 9 (July 2006): 2200–2204. http://dx.doi.org/10.1002/pssa.200566009.
Full textTanaka, Ryoji, Takeaki Iwamoto, and Mitsuo Kira. "Fused Tricyclic Disilenes with Highly Strained SiSi Double Bonds: Addition of a SiSi Single Bond to a SiSi Double Bond." Angewandte Chemie 118, no. 38 (September 25, 2006): 6519–21. http://dx.doi.org/10.1002/ange.200602214.
Full textTanaka, Ryoji, Takeaki Iwamoto, and Mitsuo Kira. "Fused Tricyclic Disilenes with Highly Strained SiSi Double Bonds: Addition of a SiSi Single Bond to a SiSi Double Bond." Angewandte Chemie International Edition 45, no. 38 (September 25, 2006): 6371–73. http://dx.doi.org/10.1002/anie.200602214.
Full textRanke, W., and Y. R. Xing. "Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)." Surface Science 381, no. 1 (June 1997): 1–11. http://dx.doi.org/10.1016/s0039-6028(97)00064-2.
Full textLewis, N., E. L. Hall, B. D. Hunt, and L. J. Schowalter. "Analysis of epitaxial CoSi2/Si and Si/CoSi2/Si heterostructures." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 730–31. http://dx.doi.org/10.1017/s0424820100145029.
Full textOnoda, H., M. Sasaki, T. Katoh, and N. Hirashita. "Si-gate CMOS devices on a Si/CaF2/Si structure." IEEE Transactions on Electron Devices 34, no. 11 (November 1987): 2280–85. http://dx.doi.org/10.1109/t-ed.1987.23232.
Full textReddy, Nagavelli Prabhakar, Teruyuki Hayashi, and Masato Tanaka. "Unexpected cross-metathesis between Si–C and Si–Si bonds." Chem. Commun., no. 16 (1996): 1865–66. http://dx.doi.org/10.1039/cc9960001865.
Full textIwanari, Tomoki, Toyo Sakata, Yutaka Miyatake, Shu Kurokawa, and Akira Sakai. "Conductance of Si nanowires formed by breaking Si-Si junctions." Journal of Applied Physics 102, no. 11 (December 2007): 114312. http://dx.doi.org/10.1063/1.2812563.
Full textM. Thomas, Stephen, Marti J. Prest, Dominic J. F. Fulgoni, Adam R. Bacon, Tim J. Grasby, David R. Leadley, Evan H. C. Parker, and Terence E. Whall. "Low frequency noise in Si and Si/SiGe/Si PMOSFETs." Journal of Telecommunications and Information Technology, no. 2 (June 25, 2023): 64–68. http://dx.doi.org/10.26636/jtit.2007.2.810.
Full textMokros, I., and M. Jansen. "Tetrakis(2-fluorophenylamino)silan und sein erstes Kondensationsprodukt N-(2-fluorophenyl)-Si, Si, Si, Si?, Si?, Si?-hexakis(2-fluorophenylamino)-disilazan. Synthesen und Kristallstrukturen." Monatshefte f�r Chemie Chemical Monthly 127, no. 2 (February 1996): 117–26. http://dx.doi.org/10.1007/bf00807392.
Full textDmitrievskiy, A. A., N. Y. Efremova, D. G. Guseva, and A. V. Shuklinov. "EXPERIMENTAL ASSESSMENT OF THE AVERAGE CONTACT PRESSURE CORRESPONDING TO PHASE TRANSFORMATIONS OF Si-I – Si-II – Si-XII/Si-III UNDER INDENTER." Tambov University Reports. Series: Natural and Technical Sciences 21, no. 3 (2016): 805–8. http://dx.doi.org/10.20310/1810-0198-2016-21-3-805-808.
Full textАфанас’єва, Т. В., О. А. Гринчук, І. П. Коваль, and М. Г. Находкін. "Структура чистих Si−Si, Ge−Ge та змішаних аддимерів Si−Ge на поверхні Si(001)." Ukrainian Journal of Physics 56, no. 3 (February 15, 2022): 240. http://dx.doi.org/10.15407/ujpe56.3.240.
Full textHartmann, J. M., M. Burdin, G. Rolland, and T. Billon. "Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces." Journal of Crystal Growth 294, no. 2 (September 2006): 288–95. http://dx.doi.org/10.1016/j.jcrysgro.2006.06.043.
Full textPeiris, Chandramalika R., Simone Ciampi, Essam M. Dief, Jinyang Zhang, Peter J. Canfield, Anton P. Le Brun, Daniel S. Kosov, Jeffrey R. Reimers, and Nadim Darwish. "Spontaneous S–Si bonding of alkanethiols to Si(111)–H: towards Si–molecule–Si circuits." Chemical Science 11, no. 20 (2020): 5246–56. http://dx.doi.org/10.1039/d0sc01073a.
Full textZalar, A., S. Hofmann, F. Pimentel, and P. Panjan. "Interfacial reactions and silicide formation in Si/Ni/Si and Si/Cr/Si sandwich layers." Surface and Interface Analysis 21, no. 8 (August 1994): 560–65. http://dx.doi.org/10.1002/sia.740210808.
Full textJałochowski, M., and E. Bauer. "Growth of metallic nanowires on anisotropic Si substrates: Pb on vicinal Si(001), Si(755), Si(533), and Si(110)." Surface Science 480, no. 3 (June 2001): 109–17. http://dx.doi.org/10.1016/s0039-6028(01)00825-1.
Full textHabib, Stéphane. "Si." Lignes 47, no. 2 (2015): 171. http://dx.doi.org/10.3917/lignes.047.0171.
Full textNemni, Monique. "Si communication savait… Si grammaire pouvait…" Canadian Modern Language Review 42, no. 2 (November 1985): 288–306. http://dx.doi.org/10.3138/cmlr.42.2.288.
Full textAldrin, Philippe. "Si près, si loin du politique." Politix 79, no. 3 (2007): 25. http://dx.doi.org/10.3917/pox.079.0025.
Full textFarzaneh, Azadeh, and R. E. Butera. "Si epitaxy on Cl-Si(100)." Applied Surface Science 589 (July 2022): 152877. http://dx.doi.org/10.1016/j.apsusc.2022.152877.
Full textFrossard, Jean-Louis, and Darius Moradpour. "Clostridium – si difficile et si onéreux." Revue Médicale Suisse 14, no. 616 (2018): 1483. http://dx.doi.org/10.53738/revmed.2018.14.616.1483.
Full textMonaco, Patrizia. "DRAMMATURGHI SI NACE O SI DIVENTA?" Revista Internacional de Culturas y Literaturas 19, no. 19 (2016): 249–59. http://dx.doi.org/10.12795/ricl.2016.i19.21.
Full textde Rosny, Antoine. "André Suarès : si loin, si proche." Communio N° 276, no. 4 (June 22, 2021): 95–105. http://dx.doi.org/10.3917/commun.276.0095.
Full textBurgel, Guy. "Téhéran, si proche et si lointain." Villes en parallèle 35, no. 1 (2002): 9–16. http://dx.doi.org/10.3406/vilpa.2002.1371.
Full textLaera, Laura. "Bambini si nasce cittadini si diventa." MINORIGIUSTIZIA, no. 2 (May 2014): 147–51. http://dx.doi.org/10.3280/mg2014-002017.
Full textZaytseva, I., M. Z. Cieplak, A. Abal'oshev, P. Dluzewski, G. Grabecki, W. Plesiewicz, L. Y. Zhu, and C. L. Chien. "Magnetoresistance of Si/Nb/Si Trilayers." Acta Physica Polonica A 118, no. 2 (August 2010): 406–8. http://dx.doi.org/10.12693/aphyspola.118.406.
Full textKanbach, H., J. Wilde, F. Kriebel, and E. Meusel. "3D Si‐on‐Si stack packaging." Soldering & Surface Mount Technology 12, no. 1 (April 2000): 35–39. http://dx.doi.org/10.1108/09540910010312429.
Full textBai, G. F., Y. P. Qiao, Z. C. Ma, W. H. Zong, and G. G. Qin. "Electroluminescence from Si/Si oxynitride superlattices." Applied Physics Letters 72, no. 26 (June 29, 1998): 3408–10. http://dx.doi.org/10.1063/1.121648.
Full textEn-Jun Zhu, S. S. Zhang, W. W. Sheng, B. Z. Zhao, C. K. Xiong, and Y. S. Wang. "Amorphous Si/Si heterojunction microwave transistors." IEEE Electron Device Letters 10, no. 1 (January 1989): 4–6. http://dx.doi.org/10.1109/55.31663.
Full textBailly, L., and T. de Broucker. "Si loin et pourtant si proches." Pratique Neurologique - FMC 8, no. 1 (February 2017): 35–37. http://dx.doi.org/10.1016/j.praneu.2017.01.010.
Full textHutchings, Patrick. "Laudato Si’: Climate Change Action: Si!" Sophia 54, no. 4 (December 2015): 405–10. http://dx.doi.org/10.1007/s11841-015-0498-5.
Full textBejan, Iulia, and David Scheschkewitz. "Phenylenverbrückung zwischen zwei Si-Si-Doppelbindungen." Angewandte Chemie 119, no. 30 (July 23, 2007): 5885–88. http://dx.doi.org/10.1002/ange.200701744.
Full textPoppe, E., G. U. Jensen, S. T. Moe, and D. Wang. "Plastic Deformation of Thin Si Membranes in Si-Si Direct Bonding." ECS Transactions 75, no. 9 (September 23, 2016): 311–19. http://dx.doi.org/10.1149/07509.0311ecst.
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