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Journal articles on the topic 'Si'

Author: Grafiati

Published: 4 June 2021

Last updated: 30 July 2024

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1

Hirao, Akira, Yushi Ando, and Seiichi Nakahama. "Polymerization of monomers containing functional silyl groups. 12. Anionic polymerization of styrene derivatives para-substituted with pentamethyldisilyl (Si-Si), heptamethyltrisilyl (Si-Si-Si), and nonamethyltetrasilyl (Si-Si-Si-Si) groups." Macromolecular Symposia 95, no. 1 (June 1995): 293–301. http://dx.doi.org/10.1002/masy.19950950125.

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2

Mercier, Pierre-Alain, Chantal de Gournay, and Zbigniew Smoreda. "Si loin, si proches." Réseaux 115, no. 5 (2002): 121. http://dx.doi.org/10.3917/res.115.0121.

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3

Génetiot, Alain. "Si lointain, si proche..." Dix-septième siècle 248, no. 3 (2010): 387. http://dx.doi.org/10.3917/dss.103.0387.

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4

Bohler, Sébastien. "Si loin, si proche…" Cerveau & Psycho N° 144, no. 6 (June 1, 2022): 3. http://dx.doi.org/10.3917/cerpsy.144.0003.

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5

Potte-Bonneville, Mathieu. "si loin, si proche." Vacarme 48, no. 3 (2009): 52. http://dx.doi.org/10.3917/vaca.048.0052.

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6

Mens, Yann. "Si proches, si loin..." Alternatives Internationales 20, no. 1 (January 1, 2005): 28. http://dx.doi.org/10.3917/ai.020.0028.

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7

Alberto, Provenzali. "Si balla? Si, balliamo." EDUCAZIONE SENTIMENTALE, no. 17 (December 2011): 110–14. http://dx.doi.org/10.3280/eds2012-017010.

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8

Prince, Joyce A. "Si, si: Stimulate Imagination." Hispania 68, no. 2 (May 1985): 423. http://dx.doi.org/10.2307/342223.

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9

Torres, Javier Carlos. "Un feliz cumpleaños ¿En si, si#o si#?" ECOS - Revista Científica de Musicoterapia y Disciplinas Afines 6, no. 1 (June 24, 2021): 001. http://dx.doi.org/10.24215/27186199e001.

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Existen situaciones en el contexto de atención clínica en Musicoterapia que, en cierto modo, se ubican al borde del espacio de consultorio. Una de ellas, sobre la que versa el presente trabajo, se liga al recibir la invitación a concurrir al cumpleaños de un paciente, con la consiguiente necesidad de poner en juego algún tipo de respuesta por parte del profesional, la cual no será sin consecuencias: sea aﬁrmativa, negativa o evasiva. A partir del planteamiento de una serie de preguntas que me fueron surgiendo ante el encuentro con una situación de esta índole, se intentará otorgarle a la cuestión el carácter clínico que estimo merece ya que, si bien no se desarrolla puertas adentro del consultorio, no por ello carece de las condiciones y direccionamientos que en él se buscan sostener.

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10

Sanjurjo, Angel, Bernard Wood, Kai Lau, and Gopala Krishnan. "WSi, FeSi, and CuSi interfaces." Scripta Metallurgica et Materialia 31, no. 8 (October 1994): 1019–24. http://dx.doi.org/10.1016/0956-716x(94)90520-7.

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11

Woo, Hee-Gweon, Bo-Hye Kim, and Myong-Shik Cho. "Si-Si/Si-C/Si-O/Si-N Coupling of Hydrosilanes to Useful Silicon-containing Materials." Synlett, no. 5 (2004): 0761–72. http://dx.doi.org/10.1055/s-2004-820016.

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12

Geng, X. H., J. M. Xue, H. C. Ge, H. B. Li, Z. P. Wang, Q. Z. Wang, and H. Z. Ren. "Modeling of a-Si/poly-Si and a-Si/poly-Si/poly-Si stacked solar cells." Solar Energy Materials and Solar Cells 75, no. 3-4 (February 2003): 489–95. http://dx.doi.org/10.1016/s0927-0248(02)00200-3.

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13

Zotov, A. V., F. Wittmann, J. Lechner, S. V. Ryzhkov, V. G. Lifshits, and I. Eisele. "Formation of buried a-Si/Al/Si, a-Si/Sb/Si and a-Si/B/Si interfaces and their electrical properties." Journal of Crystal Growth 157, no. 1-4 (December 1995): 344–48. http://dx.doi.org/10.1016/0022-0248(95)00354-1.

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14

Monteil-Bauer, Anne, and Alice-Anne Jeandel. "Si, si, les femmes existent !" L'Observatoire N°56, no. 2 (2020): 45. http://dx.doi.org/10.3917/lobs.056.0045.

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15

Sellam, Jérémie. "L’arthrose : si connue, si méconnue." Revue du Rhumatisme Monographies 88, no. 2 (April 2021): 77–78. http://dx.doi.org/10.1016/j.monrhu.2021.03.001.

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16

Ishida, Makoto, Kazuaki Sawada, Shinsuke Yamaguchi, Tetsuro Nakamura, and Tetsuo Suzaki. "Heteroepitaxial Si/Al2O3/Si structures." Applied Physics Letters 55, no. 6 (August 7, 1989): 556–58. http://dx.doi.org/10.1063/1.102434.

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17

Bommers, S., and H. Schmidbaur. "THE SYNTHESIS OF Si,Si′- BIS(TRISILYLMETHYL)DISILAZANE AND Si,Si′-BIS(TRISILYLMETHYL)DISILYLACETYLENE." Phosphorus, Sulfur, and Silicon and the Related Elements 105, no. 1-4 (August 1995): 171–74. http://dx.doi.org/10.1080/10426509508042060.

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18

Ćwil, M., P. Konarski, T. Bieniek, and R. B. Beck. "Si-oxide/Si and Si-oxynitride/Si interfaces analysed by ultra-low energy SIMS." physica status solidi (a) 203, no. 9 (July 2006): 2200–2204. http://dx.doi.org/10.1002/pssa.200566009.

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19

Tanaka, Ryoji, Takeaki Iwamoto, and Mitsuo Kira. "Fused Tricyclic Disilenes with Highly Strained SiSi Double Bonds: Addition of a SiSi Single Bond to a SiSi Double Bond." Angewandte Chemie 118, no. 38 (September 25, 2006): 6519–21. http://dx.doi.org/10.1002/ange.200602214.

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20

Tanaka, Ryoji, Takeaki Iwamoto, and Mitsuo Kira. "Fused Tricyclic Disilenes with Highly Strained SiSi Double Bonds: Addition of a SiSi Single Bond to a SiSi Double Bond." Angewandte Chemie International Edition 45, no. 38 (September 25, 2006): 6371–73. http://dx.doi.org/10.1002/anie.200602214.

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21

Ranke, W., and Y. R. Xing. "Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)." Surface Science 381, no. 1 (June 1997): 1–11. http://dx.doi.org/10.1016/s0039-6028(97)00064-2.

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22

Lewis, N., E. L. Hall, B. D. Hunt, and L. J. Schowalter. "Analysis of epitaxial CoSi2/Si and Si/CoSi2/Si heterostructures." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 730–31. http://dx.doi.org/10.1017/s0424820100145029.

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The formation of thin epitaxial metal silicide layers on Si and Si/metal silicide/Si heterostructures has received considerable attention recently for applications as ohmic contacts, permeable and metal base transistors and 3-D integrated circuits. Cobalt disilioide (CoSi2) is promising for these applications because its cubic fluorite structure is similar to that of Si. In addition, the lattice parameters of CoSi2 and Si are reasonably close (-1.2% mismatch at room temperature) making this system attractive for epitaxial growth. The quality of the epitaxial layers is particularly important for device applications. In this paper the microstructures of several CoSi2/Si and Si/CoSi2/Si specimens were investigated using transmission electron microscopy. Planar and cross-sectional samples were prepared. The planar specimens were first mechanically ground from the Si substrate side and then ion-milled in argon.

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23

Onoda, H., M. Sasaki, T. Katoh, and N. Hirashita. "Si-gate CMOS devices on a Si/CaF2/Si structure." IEEE Transactions on Electron Devices 34, no. 11 (November 1987): 2280–85. http://dx.doi.org/10.1109/t-ed.1987.23232.

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24

Reddy, Nagavelli Prabhakar, Teruyuki Hayashi, and Masato Tanaka. "Unexpected cross-metathesis between Si–C and Si–Si bonds." Chem. Commun., no. 16 (1996): 1865–66. http://dx.doi.org/10.1039/cc9960001865.

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25

Iwanari, Tomoki, Toyo Sakata, Yutaka Miyatake, Shu Kurokawa, and Akira Sakai. "Conductance of Si nanowires formed by breaking Si-Si junctions." Journal of Applied Physics 102, no. 11 (December 2007): 114312. http://dx.doi.org/10.1063/1.2812563.

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26

M. Thomas, Stephen, Marti J. Prest, Dominic J. F. Fulgoni, Adam R. Bacon, Tim J. Grasby, David R. Leadley, Evan H. C. Parker, and Terence E. Whall. "Low frequency noise in Si and Si/SiGe/Si PMOSFETs." Journal of Telecommunications and Information Technology, no. 2 (June 25, 2023): 64–68. http://dx.doi.org/10.26636/jtit.2007.2.810.

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Measurements of 1/f noise in Si and Si0.64Ge0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is primarily associated with an energy dependent density of oxide trap states and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to Si. The present study also emphasizes the important role of transconductance enhancement in the dynamic threshold mode in lowering the input referred voltage noise.

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27

Mokros, I., and M. Jansen. "Tetrakis(2-fluorophenylamino)silan und sein erstes Kondensationsprodukt N-(2-fluorophenyl)-Si, Si, Si, Si?, Si?, Si?-hexakis(2-fluorophenylamino)-disilazan. Synthesen und Kristallstrukturen." Monatshefte f�r Chemie Chemical Monthly 127, no. 2 (February 1996): 117–26. http://dx.doi.org/10.1007/bf00807392.

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28

Dmitrievskiy, A. A., N. Y. Efremova, D. G. Guseva, and A. V. Shuklinov. "EXPERIMENTAL ASSESSMENT OF THE AVERAGE CONTACT PRESSURE CORRESPONDING TO PHASE TRANSFORMATIONS OF Si-I – Si-II – Si-XII/Si-III UNDER INDENTER." Tambov University Reports. Series: Natural and Technical Sciences 21, no. 3 (2016): 805–8. http://dx.doi.org/10.20310/1810-0198-2016-21-3-805-808.

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29

Афанас’єва, Т. В., О. А. Гринчук, І. П. Коваль, and М. Г. Находкін. "Структура чистих Si−Si, Ge−Ge та змішаних аддимерів Si−Ge на поверхні Si(001)." Ukrainian Journal of Physics 56, no. 3 (February 15, 2022): 240. http://dx.doi.org/10.15407/ujpe56.3.240.

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Використовуючи кластерні квантовохімічні та гібридні квантово-хімічні–молекулярно-механічні розрахунки з перших принципів (ab initio), досліджено адсорбцію Ge на поверхню Si(001). Розрахунки з врахуванням конфігураційної взаємодії (кв)використовувалися для визначання геометричної та електронної структури чистих Si–Si, Ge–Ge, та змішаних Si–Ge аддимерів на поверхні Si(001). Як чисті Si–Si, Ge–Ge, так і змішані Si–Ge аддимери – не нахилені до поверхні та носять бірадикальнийхарактер. Довжини зв'язків чистих Si–Si та змішаних Si–Ge аддимерів становлять 2,35 Å, 2,45 Å та 2,41 Å відповідно. Утворення чистих Ge–Ge аддимерів на поверхні Si(001) є більш енергетично вигідним, ніж утворення змішаних аддимерів Si–Ge. Заселеності натуральних антизв'язуючих орбіталей чистих Si–Si, Ge–Ge та змішаних Si–Ge аддимерів становлять 0,56, 0,65 та 0,66 відповідно. Натуральні заселеності антизв'язуючих орбіталей для димерів поверхні становлять 0,35. Бірадикальний характер був більший у випадку аддимерів. Також розглянуто вплив прикладеної до вістря напруги на натуральні заселеності антизв'язуючих орбіталей чистих Si–Si та змішаних Si–Ge аддимерів поверхні Si(001). Під дією напруги вістря спостерігалася зміна плетності чистого аддимера Ge–Gе з синглету на триплет.

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30

Hartmann, J. M., M. Burdin, G. Rolland, and T. Billon. "Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces." Journal of Crystal Growth 294, no. 2 (September 2006): 288–95. http://dx.doi.org/10.1016/j.jcrysgro.2006.06.043.

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31

Peiris, Chandramalika R., Simone Ciampi, Essam M. Dief, Jinyang Zhang, Peter J. Canfield, Anton P. Le Brun, Daniel S. Kosov, Jeffrey R. Reimers, and Nadim Darwish. "Spontaneous S–Si bonding of alkanethiols to Si(111)–H: towards Si–molecule–Si circuits." Chemical Science 11, no. 20 (2020): 5246–56. http://dx.doi.org/10.1039/d0sc01073a.

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32

Zalar, A., S. Hofmann, F. Pimentel, and P. Panjan. "Interfacial reactions and silicide formation in Si/Ni/Si and Si/Cr/Si sandwich layers." Surface and Interface Analysis 21, no. 8 (August 1994): 560–65. http://dx.doi.org/10.1002/sia.740210808.

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33

Jałochowski, M., and E. Bauer. "Growth of metallic nanowires on anisotropic Si substrates: Pb on vicinal Si(001), Si(755), Si(533), and Si(110)." Surface Science 480, no. 3 (June 2001): 109–17. http://dx.doi.org/10.1016/s0039-6028(01)00825-1.

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34

Habib, Stéphane. "Si." Lignes 47, no. 2 (2015): 171. http://dx.doi.org/10.3917/lignes.047.0171.

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35

Nemni, Monique. "Si communication savait… Si grammaire pouvait…" Canadian Modern Language Review 42, no. 2 (November 1985): 288–306. http://dx.doi.org/10.3138/cmlr.42.2.288.

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36

Aldrin, Philippe. "Si près, si loin du politique." Politix 79, no. 3 (2007): 25. http://dx.doi.org/10.3917/pox.079.0025.

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37

Farzaneh, Azadeh, and R. E. Butera. "Si epitaxy on Cl-Si(100)." Applied Surface Science 589 (July 2022): 152877. http://dx.doi.org/10.1016/j.apsusc.2022.152877.

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38

Frossard, Jean-Louis, and Darius Moradpour. "Clostridium – si difficile et si onéreux." Revue Médicale Suisse 14, no. 616 (2018): 1483. http://dx.doi.org/10.53738/revmed.2018.14.616.1483.

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39

Monaco, Patrizia. "DRAMMATURGHI SI NACE O SI DIVENTA?" Revista Internacional de Culturas y Literaturas 19, no. 19 (2016): 249–59. http://dx.doi.org/10.12795/ricl.2016.i19.21.

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40

de Rosny, Antoine. "André Suarès : si loin, si proche." Communio N° 276, no. 4 (June 22, 2021): 95–105. http://dx.doi.org/10.3917/commun.276.0095.

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41

Burgel, Guy. "Téhéran, si proche et si lointain." Villes en parallèle 35, no. 1 (2002): 9–16. http://dx.doi.org/10.3406/vilpa.2002.1371.

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42

Laera, Laura. "Bambini si nasce cittadini si diventa." MINORIGIUSTIZIA, no. 2 (May 2014): 147–51. http://dx.doi.org/10.3280/mg2014-002017.

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43

Zaytseva, I., M. Z. Cieplak, A. Abal'oshev, P. Dluzewski, G. Grabecki, W. Plesiewicz, L. Y. Zhu, and C. L. Chien. "Magnetoresistance of Si/Nb/Si Trilayers." Acta Physica Polonica A 118, no. 2 (August 2010): 406–8. http://dx.doi.org/10.12693/aphyspola.118.406.

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44

Kanbach, H., J. Wilde, F. Kriebel, and E. Meusel. "3D Si‐on‐Si stack packaging." Soldering & Surface Mount Technology 12, no. 1 (April 2000): 35–39. http://dx.doi.org/10.1108/09540910010312429.

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45

Bai, G. F., Y. P. Qiao, Z. C. Ma, W. H. Zong, and G. G. Qin. "Electroluminescence from Si/Si oxynitride superlattices." Applied Physics Letters 72, no. 26 (June 29, 1998): 3408–10. http://dx.doi.org/10.1063/1.121648.

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46

En-Jun Zhu, S. S. Zhang, W. W. Sheng, B. Z. Zhao, C. K. Xiong, and Y. S. Wang. "Amorphous Si/Si heterojunction microwave transistors." IEEE Electron Device Letters 10, no. 1 (January 1989): 4–6. http://dx.doi.org/10.1109/55.31663.

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47

Bailly, L., and T. de Broucker. "Si loin et pourtant si proches." Pratique Neurologique - FMC 8, no. 1 (February 2017): 35–37. http://dx.doi.org/10.1016/j.praneu.2017.01.010.

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48

Hutchings, Patrick. "Laudato Si’: Climate Change Action: Si!" Sophia 54, no. 4 (December 2015): 405–10. http://dx.doi.org/10.1007/s11841-015-0498-5.

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49

Bejan, Iulia, and David Scheschkewitz. "Phenylenverbrückung zwischen zwei Si-Si-Doppelbindungen." Angewandte Chemie 119, no. 30 (July 23, 2007): 5885–88. http://dx.doi.org/10.1002/ange.200701744.

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50

Poppe, E., G. U. Jensen, S. T. Moe, and D. Wang. "Plastic Deformation of Thin Si Membranes in Si-Si Direct Bonding." ECS Transactions 75, no. 9 (September 23, 2016): 311–19. http://dx.doi.org/10.1149/07509.0311ecst.

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