Dissertations / Theses on the topic 'Si'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the top 50 dissertations / theses for your research on the topic 'Si.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.
Contie, Yohan. "Synthèse et réactivité de silylènes stables Si-fonctionnalisés (-Si-H, -Si-Cl, -Si-SnR3, Si-SiR3)." Toulouse 3, 2012. http://thesesups.ups-tlse.fr/1832/.
Full textThe main objective of this thesis concerns the study of silylenes stabilized by coordination of a phosphine ligand. Particularly, this study is focused on the influence of the nature of the ligand and the silicon substituents on the properties of these phosphine-silylene complexes. The first part of this thesis is a review concerning the different modes known about the stabilization of the silylene moiety, with a particular focus on silylene-Lewis base complexes. The second chapter deals with the first synthesis of phosphine-stabilized hydrogenosilylenes. In the presence of an olefin, an original hydrosilylation reaction was observed in mild conditions and without any catalyst. Functionalized silyl- and stannyl-silylenes also react readily with olefins through an insertion migration process, which is perfectly reversible in the case of the stannylsilylene derivative. This Béta-elimination reaction of the olefin at the silicon center demonstrates that phosphine-stabilized silylenes can behave in some cases like transition metal complexes. The third chapter is devoted to the study of the dimerization process of phosphine-silylene complexes, playing on the steric hindrance of nitrogen and phosphorus substituents. A lower kinetic protection of the Si(II) center led to unstable silylenes, which dimerise through an original and reversible Si-H or Si-Cl bond activation. In the fourth chapter is reported a study concerning the reactivity of a C-phosphino-silyne. Due to the implication of the phosphino group on the stabilization of the SiC-triple bond, this molecule can behave as a 1,3-dipole, and reacts readily with benzonitrile through a [3+2] cycloaddition process. The corresponding cycloadducts can be related to cyclic carbodiphosphoranes, particularly concerning the electronic properties, and therefore they present a strong nucleophilic character
Hadley, M. J. "Scanning tunnelling microscopy of Si(111), Pb-Si(111) and Si(113)." Thesis, University of York, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.316178.
Full textDufauquez, Christophe. "Production de particules chargées légères et multiplicités neutroniques associées dans les réactions p+(nat)Si et alpha+(nat)Si de 20 à 65 MeV." Université catholique de Louvain, 2005. http://edoc.bib.ucl.ac.be:81/ETD-db/collection/available/BelnUcetd-06012006-114210/.
Full textYi, Mi-Kyung. "Hermeneutique et psychanalyse si proches. . . Si etrangeres." Paris 7, 1998. http://www.theses.fr/1998PA070015.
Full textOur research propose a confrontation between hermeneutics and psychoanalysis. Although one and the other appeal to the interpretation, our thesis is that the freudian method of investigation is + anti- hermeneutic ;. The meaning of this + anti-; which refer to the technical difference of interpretation is to elucidate considering two other involvements of hermeneutics in psychoanalysis: hermeneutics, as the research logic and as the philosophical theory of human understanding. The first part of our study apply to read some founders of philosophical hermeneutics, as schleiermacher, dilthey, heidegger and gadamer. This reading is guided by the question of otherness which we put forward as the motor of hermeneutic mouvement. Our study of different hermeneutic theories of understanding tries to underscore the dimension of message constituent of the birth of hermeneutics but forgetted today. The second part of our research is devoted to the debate in psychoanalysis, around the + hermeneutic turn ;. To examinate the caracteristic of revival of this turn, we apply to study differents authors who reinterpret the psychoanalysis in a hermeneutic point of view : p. Ricoeur, s. Viderman, d. Spence and r. Schafer. And then comes the examination of the jungian method, first explicit hermeneutic version of psychoanalysis. At last, we return to freud to establish, inspired by the work of laplanche, in particular, by his conception of seduction, translation and interpretation, why psychoanalysis is defined as stranger to any hermeneutic mouvement, exactely for the same reasons why freud was compelled to define his method in contrast to all psychosynthesis
Левіцький, Анатолій Миколайович. "Структура та властивості сплавів систем Nb-Si-B, Nb-Si-Cr, Nb-Si-Ti, Nb-Si-Mo для високотемпературних застосувань." Master's thesis, КПІ ім. Ігоря Сікорського, 2019. https://ela.kpi.ua/handle/123456789/31364.
Full textThe object of study: the alloys of the system Nb-Si-(B, Cr, Mo, Ti) at. %: Nb-25Si-13B, Nb-Si-25Cr, Nb-6Si-30Cr, Nb-6Si-35Cr, Nb-20Si-2Mo, Nb-20Si-4Mo, Nb-20Si-6Mo, Nb-20Si-22Ti, Nb-20Si-24Ti obtained by electron beam sintering. The purpose of the work is to study the structure and properties of alloys of the Nb-Si-(B, Cr, Mo, Ti) system obtained by electron beam sintering. Research methods and equipment: the alloys of system Nb-Si-(B, Cr, Mo, Ti) were obtained by ELA-6. The micro- and macrostructure, the chemical composition of the phase components of the resulting Nb-Si-(B, Cr, Mo, Ti) alloys, was studied using a set of highly informative methods of physical material science (electron microscopy, chemical analysis). It was measured is microhardness and crack resistance.
Объект исследования: сплавы систем Nb-Si-(B, Cr, Mo, Ti) ат. %: Nb-25Si-13B, Nb-Si-25Cr, Nb-6Si-30Cr, Nb-6Si-35Cr, Nb-20Si-2Mo, Nb-20Si-4Mo, Nb-20Si-6Mo, Nb-20Si-22Ti, Nb- 20Si-24Ti, полученные электронно-лучевым оплавлением. Целью работы является изучение структуры и свойств эвтектических сплавов систем Nb-Si-(B, Cr, Mo, Ti), полученных электронно-лучевым оплавлением. Методы исследования и аппаратура: получение сплавов систем Nb-Si-(B, Cr, Mo, Ti) осуществлялось в установке Эла-6. С помощью комплекса высокоинформативных методов физического материаловедения (электронной микроскопии, микрорентгеноспектрального анализа) исследованы микро- и макроструктура, химический состав фазовых составляющих сплавов систем Nb-Si-(B, Cr, Mo, Ti). Также измерена микротвердость и трещиностойкость на Микротвердомере ПМТ-3.
Mezger, Nathalie. "L'adénome hépathique : une pathologie si simple, si bénigne ? /." Genève : [s.n.], 2009. http://opac.nebis.ch/cgi-bin/showAbstract.pl?sys=000289145.
Full textHo, Catherina R. "Heterogeneous nucleation of Si in Al-Si alloys." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386591.
Full textSalman, Fatma. "EXPERIMENTAL STUDY OF PROFILES OF IMPLANTED SPECIES INTO SEMICONDUCTOR MATERIALS USING SECONDARY ION MASS SPECTROMETRY." Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3056.
Full textPh.D.
Department of Physics
Sciences
Physics PhD
Hoffmann, Volker. "Innere Photoemission in Au/Si und CoSi2/Si Heterostrukturen." [S.l. : s.n.], 1998. http://darwin.inf.fu-berlin.de/1998/2/index.html.
Full textHugunin, James Jeffrey. "The superconductor/semiconductor interface of V₃Si and Si." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/11862.
Full textIncludes bibliographical references (leaves 43-45).
by James Jeffrey Hugunin.
M.S.
Yaacoub, Nader. "Nouveaux états du Si dans les multicouches Co/Si." Université Louis Pasteur (Strasbourg) (1971-2008), 2007. https://publication-theses.unistra.fr/public/theses_doctorat/2007/YAACOUB_Nader_2007.pdf.
Full textIn this work we studied the structural and physical properties of the Co/Si multilayers deposited by sputtering at 90 K with the aim of limiting the interdiffusion at interfaces. We have obtained very well crystallized multilayers although polycristalline, formed of very big grains > 300 nm with limited interfacial mixing as compared to that of multilayers deposited at 300 K. It allowed us to observe new, original and spectacular physical phenomena in these multilayers: (1) Oscillation of the interlayer exchange coupling in agreement with ab-initio calculations, (2) Oscillation of the multilayer resistance from weak to strong and (3) Oscillation of the roughness of the interface, according to the thickness of Si. The period of these oscillations, which are well correlated between them, is short of the order of 0. 4 nm (2 ML). This led to us to propose a common interpretation of these results, based on the periodic passage at the Fermi level of a quantum well state in the Si layer
Karp, Christoph D. Lewis Nathan Saul. "Photoelectrochemistry of Si/polymer and Si/metal/solution interfaces /." Diss., Pasadena, Calif. : California Institute of Technology, 1995. http://resolver.caltech.edu/CaltechETD:etd-10262007-085203.
Full textYaacoub, Nader Panissod Pierre. "Nouveaux états du Si dans les multicouches Co/Si." Strasbourg : Université Louis Pasteur, 2007. http://eprints-scd-ulp.u-strasbg.fr:8080/823/01/YAACOUB_Nader_2007.pdf.
Full textMeitzner, Karl. "Heterojunction-Assisted Impact Ionization and Other Free Carrier Dynamics in Si, ZnS/Si, and ZnSe/Si." Thesis, University of Oregon, 2015. http://hdl.handle.net/1794/19294.
Full textChen, Chia-Wei. "Low cost high efficiency screen printed solar cells on Cz and epitaxial silicon." Diss., Georgia Institute of Technology, 2016. http://hdl.handle.net/1853/54968.
Full textNaftel, Steven. "Interactions of transition metals with silicon(100), the Ni-Si, Co-Si and Au/Si(100) systems." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0008/NQ42546.pdf.
Full textGadea, Gerard. "Integration of Si/Si-Ge nanostructures in micro-thermoelectric generators." Doctoral thesis, Universitat de Barcelona, 2017. http://hdl.handle.net/10803/459243.
Full textLos materiales termoeléctricos permiten la conversión de calor a electricidad y viceversa. Esto permite explotar el efecto termoeléctrico en generadores termoeléctricos, capaces de extraer energía térmica de fuentes calientes y convertirla a electricidad útil. Estos generadores presentan grandes ventajas, como su falta de piezas móviles – y por ende necesidad de mantenimiento alguna – y su total escalabilidad, que permite cambiar su tamaño sin afectar su rendimiento. Esto los hace obvios candidatos para la alimentación y carga de dispositivos portátiles y situados lugares de difícil acceso. A pesar de ello, su uso no está muy extendido debido a que su relación eficiencia-coste es baja en comparación a otros métodos capaces de suplir las funciones de alimentación – como la sustitución periódica de baterías – o de conversión térmica-eléctrica – como las turbinas de vapor. Los materiales termoeléctricos suelen ser o eficientes y caros (como el Bi2Te3 usado en los módulos comerciales) o ineficientes y de bajo coste (como el silicio, barato por su abundancia ya que supone un 28% de la corteza terrestre). En este trabajo se han crecido nanostructuras de silicio y silicio-germano, con dimensiones en el orden de los 100 nm. Los nanomateriales presentan propiedades termoeléctricas mejoradas respecto a sus contrapartes macroscópicas. Gracias a la nanoestructuración pues, se ha abordado del problema de eficiencia-coste por dos vertientes: • En el caso del silicio – normalmente un mal termoeléctrico debido a su alta conductividad térmica – se ha habilitado su uso como termoeléctrico al crecerlo en forma de nanohilos cristalinos y nanotubos de silicio policristalino. • En el caso de silicio-germano – que ya es un buen termoeléctrico para uso en altas temperaturas – se ha aumentado su eficiencia aún más, creciéndolo en forma de nanohilos. Yendo más allá de la síntesis, los nanohilos de silicio/silicio-germano se han optimizado, caracterizado en integrado en gran número micro-generadores termoeléctricos de 1 mm2 de superficie, pensados para la alimentación de pequeños dispositivos y circuitos integrados. Respecto a los nanotubos de Si, estos se han obtenido en densas fibras macroscópicas aptas para su aplicación directa como generadores termoeléctricos de gran área. Cabe mencionar que ambos nanomateriales – así como los microgeneradores basados en nanohilos – fueron obtenidos mediante técnicas actualmente utilizadas para la fabricación de circuitos integrados, pensando en la escalabilidad del proceso para su aplicación. El trabajo presentado en esta tesis consiste en el crecimiento, optimización, estudio e integración de nanostructuras de Si/Si-Ge para su aplicación en generación termoeléctrica. En los Capítulos 1 y 2 se pone un marco a los materiales tratados y su aplicación y se describen los métodos utilizados, respectivamente. Los resultados se han dividido en cuatro capítulos. En los Capítulos 3, 4 y 5 se tratan los nanohilos abordando su crecimiento, caracterización y aplicación en microgeneradores, respectivamente. En el Capítulo 6 se tratan las fibras de nanotubos, integrando todo el estudio en el mismo capítulo. Finalmente en el Capítulo 7 se muestran las conclusiones, resumiendo los resultados e indicando la relevancia del trabajo.
Milne, David Kerr. "Laser chemical vapour deposition of Si and Si-C alloys." Thesis, Heriot-Watt University, 1989. http://hdl.handle.net/10399/937.
Full textNazir, Z. H. "Surface magnetism of Fe/Si(111) and Fe/Si(100)." Thesis, University of Sussex, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362272.
Full textWu, Hao. "Numerical and experimental investigation of SI-HCCI-SI mode transitions." Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609143.
Full textYou, Wenbin. "Electrical properties of Si nanocrystal films processed from Si-inks." Master's thesis, Universidade de Aveiro, 2009. http://hdl.handle.net/10773/4553.
Full textFilmes finos de nanocristais de sílicio (Si-NCs) depositados sobre substratos flexiveis, usando tintas de sílicio, são atractivos por causa do seu potencial na utilização em dispositivos competitivos em termos de custo e versáteis taiscomo detectors e dispositivos termoeléctricos. O estudo da preparação ecomportamento eléctrico destas redes de nanocristais é fundamental paracompreender completamente o seu potencial. Em investigação anterior, filmesde Si-NCs foram depositados por spin coating sobre substratos de polimida e asua condutividade eléctrica for medida a baixa temperatura e em vácuo. Neste trabalho, baseado no processo anteriormente desenvolvido, nós estudamos a influência dos diferentes parâmetros de preparação na morfologiae optimizámo-los tais como a concrentação da tinta de Si e a velocidade derotação durante a preparação por spin coating. Além disso, investigamos as propriedades eléctricas de filmes de Si-NCs em condições ambientais e à temperatura ambiente, que é considerada umasituação mais realista, no que respeita a aplicações futuras, do que ascondições de vácuo e baixa temperatura. Especificamente, o efeito de vários processos fundamentais, tais como tratamento de superfície (erosão HF) dosSi-NCs, dopagem electrónica e iluminação na condutividade eléctrica emcondições ambientais foi investigada. Verificamos que as curvas decondutividade versus tempo (σ-t) dos filmes de Si-NCs medidas em condiçõesambientais apresentam um decaímento rápido causado pela tensão aplicada,seguida pela saturação em valores baixos. Antes do tratamento com HF, nema exposição à luz nem a dopagem tipo-p leva a uma alteração significativa da condutividade. Depois da remoção dos óxidos nativos dos Si-NCs (tratamento do filmes com HF), um forte efeito da iluminação e da dopagem tipo-p sobre a condutividade é observado, o que indica que a condução nos filmes de Si-NCs é dominada por diferentes mecanismos dependendo de os nanocristaisestarem terminados com H ou oxidados. Além disso, da comparação entremedidas eléctricas e ópticas (realizados através de espectroscopia FT-IR), concluimos que a degradação da condutividade dos filmes de Si-NCs tratado com HF que ocorreu por exposição às condições ambientais é essencialmentedevida ao crescimento de uma camada de óxido na superfície dos Si-NCs.
Thin films of silicon nanocrystals (Si-NCs) deposited onto flexible substrates using silicon inks are attractive because of their potential applications in cost efficient and versatile devices such as detectors and thermoelectric devices. Studying the assembling and electrical behaviour of these nanocrystal net-works is fundamental to understand fully their technical potential. In previous research, Si-NC films have been deposited by spin coating process onto poly-imide substrates and the electrical conductivity of the resulting films hasbeen measured at low temperature and vacuum conditions. In this work, based on the previously developed process, we have studied theinfluence of different assembling parameters on film morphology and optimized the parameters such as the ink concentration and the spin rate for the film fab-rication. Furthermore, we have investigated the electrical properties of Si-NC films at ambient atmosphere and room temperature, which is considered to be a more practical situation with regard tofuture applications than the vacuum and low temperature conditions. Specifically, the effect of several fundamental proc-esses, such as surface treatment (HF etching) of Si-NCs, electronic doping and illumination on the electrical conductivity at ambient conditions has been inves-tigated. We find that the conductivity-time curves (σ-t) of the Si-NC films measured at ambient conditions show a fast decay caused by the applied volt-age, followed by a saturation at lower levels. Before HF etching, neitherthe light exposure nor the P-doping leads to a significant change of the conductiv-ity. After removal of the native surface oxide layer of Si-NCs (by HF etching of the films), a strong effect of illumination and P-doping on the film conductivity isin turn observed, which indicates that the conduction in Si-NC films is domi-nated by different mechanisms depending on whether the nanocrystals are H-terminated or surface oxidized. Furthermore, from a comparison between elec-trical and optical measurements (carried out with FT-IR spectroscopy), we conclude that the degradation of the conductivity of HF-etched Si-NC films that occurred by exposure to ambient conditions is mainly attributed to the growth of the oxide layer on the Si-NC surface.
Bascetta, Marco. "Eppur si muove." Universität Leipzig, 2002. https://ul.qucosa.de/id/qucosa%3A33527.
Full textStulman, Timothy A. "Si Ji Tu." Bowling Green State University / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1151329272.
Full textNetzer, Giovanni. "Si en parvis ! /." Basel : Ed. Theaterkultur Verl, 2001. http://catalogue.bnf.fr/ark:/12148/cb39077268x.
Full textMention parallèle de titre ou de responsabilité : Auf in den Himmel ! : rätoromanische Dramen des 18. Jahrunderts. Bibliogr. p. 269-281.
Resende, Mário Ferreira. "Itinerários de si." reponame:Repositório Institucional da UFSC, 2012. http://repositorio.ufsc.br/xmlui/handle/123456789/94324.
Full textMade available in DSpace on 2012-10-25T08:45:23Z (GMT). No. of bitstreams: 1 284330.pdf: 540115 bytes, checksum: 504822c492ee67b31805c95e3f591cf0 (MD5)
O presente trabalho propõe tomar o tema da identidade a partir de uma perspectiva crítica, assumindo como objeto de análise um conjunto de fragmentos colhidos numa comunidade da rede virtual de relacionamentos Orkut que propõe o debate acerca do tema da mudança. A comunidade Eu Mudei corresponde ao espaço discursivo onde se articulam os testemunhos de sujeitos, seus processos de desubjetivação e transformação, produzindo a abertura na qual é possível ver o lugar da relação com o exterior no aparentemente simples gesto de enunciação da mudança. Trabalhada na sua banalidade, e não apesar dela, a comunidade configurou-se então como o espaço em que a ambivalência da constituição do sujeito, nesse lançar-se contínuo à mudança, realiza-se, tanto na abertura ao impessoal, quanto na recondução a posições identitárias. O processo pelo qual se converte uma forma de subjetividade em outra constitui um intervalo, um hiato entre dois vir a ser subjetivos, distância entre o que deixei de ser e o que sou agora. O trânsito de uma identidade a outra expõe a sua radicalidade histórica: a constituição contingencial diante das forças positivas de seu tempo que delimita, recorta e hierarquiza as formas válidas de ser sujeito. O trabalho também buscou mostrar que esse lugar de enunciação da mudança produz movimentos outros e dá abrigo a vozes que não foram capturadas e reconduzidas a posições identitárias. Nesse caso, o gesto que nos lança ao movimento de mudança articula-se potente quando o que resta coincide com o que é suficiente para continuar. Mesmo um conceito como o de identidade, só pode apontar para o uno, para o indivisível, para a unidade, porque o seu processo de produção também já remete para o múltiplo, para o de fora, para o devir. A distância imposta pela passagem de uma posição identitária para outra é suficiente para restituir ao sujeito a sua condição de força afetada pelo mundo e de pura abertura à exterioridade. Descolada dos conteúdos das proposições, as forças singulares e nômades se dão nessa passagem, nesse salto que encontra no testemunho a possibilidade de expressão de sua potência criadora.
Marcolin, Samuel Pereira. "Escritas de si." reponame:Repositório Institucional da UFSC, 2016. https://repositorio.ufsc.br/xmlui/handle/123456789/177342.
Full textMade available in DSpace on 2017-07-11T04:20:59Z (GMT). No. of bitstreams: 1 346425.pdf: 609645 bytes, checksum: 4803cea3ce049b97590e03a77548a5cb (MD5) Previous issue date: 2016
Esta dissertação é o resultado de uma pesquisa realizada no Programa de Mestrado Profissional em Ensino de história. A Pesquisa foi desenvolvida junto a um núcleo de jovens e adultos no município de Florianópolis, no ano letivo de 2015, com o objetivo de traçar as possibilidades do ensino de história a partir das narrativas e memórias da/os estudantes. Este trabalho buscou desenvolver uma ação educativa levando em consideração a pesquisa como princípio educativo, modelo de educação que estrutura a educação de jovens e adultos do ensino fundamental no município de Florianópolis. As narrativas das memórias desta/es estudantes foram mobilizadas a partir de entrevistas que foram posteriormente problematizadas individual e coletivamente. O objetivo desta ação foi desenvolver , a partir desta problematização, uma pesquisa junto aos estudantes da EJA. O trabalho de pesquisa junto aos estudantes seguiu o modelo de educação estabelecido pela EJA no município. Durante este processo, as entrevistas da/os estudantes foram transcritas e problematizadas, visando ao final, a criação de uma problemática coletiva que respeitasse os interesses individuais, que foram levantados a partir das narrativas de suas memórias. Após esta ação, uma pesquisa coletiva foi desenvolvida junto aos estudantes, que seguiu a estrutura de etapas desenvolvidas pelo modelo de educação da EJA em Florianópolis e cuscou abrir espaço para as singularidades do ensino de história neste contexto.
Abstract : This dissertation is the result of a research realized at the Programa de Mestrado Profissional em Ensino de História. The research was built with an youth and adult students group from Florianópolis, capital city of Santa Catarina State, during 2015 school year with the purpose of developing possible ways to think the Teaching of History based on student's memories and narratives. This work aimed to develop an educational action considering the research itself as a principle of education, a rule that contributes to the structuring of youth and adult education in Florianopoli's primary education. These students narratives and memories emerged from interviews that were thereafter discussed individually and collectively. The purpose of this educational action was to create a research including the participation of the students. All the method respected the stablished basis in local education for youth and adults. During this process, the student's enterviews were written and then discussed aiming, at the end, to conceive a collective proposition that included individual perspectives and interests. The steps from this work followed the rules from municipal education for youth and adults and intended to open some space to the singularities in the Teaching of History in this context.
Butvilaitė, Vilma. "SPECIALIŲJŲ UGDYMO(SI) POREIKIŲ VAIKŲ INDIVIDUALAUS LIETUVIŲ KALBOS MOKYMO(SI) VALDYMAS." Master's thesis, Lithuanian Academic Libraries Network (LABT), 2010. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100903_125330-33994.
Full textRelevance of the thesis: teaching children with special needs is urgent because the tendency of increasing numbers of such children is observed. Educational research is aimed at improving training children with special needs. Object of the thesis: managing individual Lithuanian language teaching/learning with special needs children. Aim of the thesis: to prove theoretically and to make an empiric research of managing Lithuanian language teaching/learning with special needs children. Participants of the research: 60 Lithuanian language teachers and 110 pupils with special needs.The research was carried out in Šiauliai and Raseiniai towns and also in secondary schools of the aforementioned districts, because the administrations of those schools were interested in the results of the research. Tools of the research: a standard mixed type questionnaire in a written form. Methodology of the research is based on humanistic, progressive training concepts, also on the principle of intergration. Results of the research: Lithuanian language teachers who teach children with special needs usually apply typical methods of teaching: explanation, conversation, independent tasks, other ways of helping a pupil. Teachers state lack of competence in organising teaching/ learning process with children of special needs. They also stress that they have enough skills to encourage self-help and development of potential possibilities of children with special needs. Children are able to fulfill... [to full text]
Keshavarzi, Shervin [Verfasser], Holger [Akademischer Betreuer] Reinecke, and Ulrich [Akademischer Betreuer] Mescheder. "Silicon needle-like surfaces for room temperature si-si bonding applications." Freiburg : Universität, 2019. http://d-nb.info/1202010865/34.
Full textBai, Gang Nicolet Marc-A. "I. Heteroepitaxy on Si. : II. Ion implantation in Si and heterostructures /." Diss., Pasadena, Calif. : California Institute of Technology, 1991. http://resolver.caltech.edu/CaltechETD:etd-06282007-105319.
Full textFasoli, Martina <1996>. "Come si sviluppano e si posizionano i brand emergenti nell'industria dell'automotive." Master's Degree Thesis, Università Ca' Foscari Venezia, 2020. http://hdl.handle.net/10579/17653.
Full textPalmino, F. "Etudes d'interfaces terre rare/semi-conducteur et réalisation de croissances nanostructurées: Er/Si, Sm/Si et Pb/Sm-Si." Habilitation à diriger des recherches, Université de Franche-Comté, 2003. http://tel.archives-ouvertes.fr/tel-00091968.
Full textBrighten, James Cordeaux. "The electrical characterisation of Si and Si/Siâ†1â†-â†XGeâ†X/Si structures grown by molecular beam epitaxy." Thesis, University of Warwick, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.387369.
Full textBac, Joanna Ewa. "Software intelligence (SI), dependent legal personhood & SI-human amalgamation : an evolutionary step for US patent law and SI." Thesis, University of Aberdeen, 2018. http://digitool.abdn.ac.uk:80/webclient/DeliveryManager?pid=237873.
Full textOrloski, Renata Villela. "Forças de oscilador ponderadas e tempos de vida para os espectros de Si II, Si VIII e SI IX." [s.n.], 2000. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277318.
Full textDissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica "Gleb Wataghin"
Made available in DSpace on 2018-07-27T00:42:16Z (GMT). No. of bitstreams: 1 Orloski_RenataVillela_M.pdf: 6248271 bytes, checksum: bc3dae30d5e644fc01f9a426a52c360b (MD5) Previous issue date: 2000
Resumo: O objetivo principal deste trabalho é apresentar as forças de oscilador ponderadas ( gf ) e os tempos de vida para todas as transições de dipolo elétrico conhecidas experimentalmente para os íons de Si II, Si VIII e Si IX. A interpretação do cálculo destas duas grandezas é de importância fundamental por exemplo na astrofísica, pois o silício nos seus vários graus de ionização é um dos elementos mais comuns observados em espectros de absorção e emissão de fontes astrofisicas. Neste trabalho é feito para cada um dos íons uma compilação de todos os valores de energia e dos comprimentos de onda de todas as transições conhecidas experimentalmente, mediante estes valores calculamos os tempos de vida e as forças de oscilador ponderadas. Estes cálculos são realizados em uma aproximação relativística multiconfiguracional Hartree-Fock (HFR). Os parâmetros eletrostáticos foram otimizados por um procedimento de mínimos quadrados afim de produzir um melhor ajuste com valores experimentais dos níveis energéticos. Este método produz valores de gf que estão em melhor acordo com as intensidades observadas bem como tempos de vida mais próximos dos experimentais. Neste trabalho são apresentadas todas as linhas espectrais de dipolo elétrico conhecidas experimentalmente para cada um dos íons e que se resumem: -Silício uma vez ionizado, Si II, onde foram observados 146 níveis energéticos e 405 transições de dipolo elétrico na faixa de 700-9500Å; -Silício sete vezes ionizado, Si VIII, onde foram observados 73 níveis energéticos e 96 transições de dipolo elétrico na faixa de 50-1900Å e -Silício oito vezes ionizado, Si IX, onde foram observados 56 níveis energéticos e 103 transições de dipolo elétrico na faixa de 45-450Å
Abstract: The principal objective of this work is to present the weighed oscillator strengths (gf) and the lifetimes for all the eletric dipole transitions experimentally known for the íons of Si II, Si VIII VIII and Si IX. The interpretation of the calculation of these two values is for instance of fundamental importance in the astrophysics, because the silicon in your several ionization degrees is one of the most common elements observed in absorption and emission spectra of astrophysical sources. In this work it is done for each one of the ions a compilation of alI the values of energy and of wavelengths for all the transitions experimentally known, with these values we calculated the lifetimes and the weigthed oscillator strengths. These calculations are accomplished in a multiconfiguration Hartree-Fock relativistic (HFR) approach. The eletrostatic parameters were optimized by a least-square procedure in order to produce a better adjustment with experimental values of energy levels. This method produces values of gf that are in better agreement with the observed intensities as well as lifetimes closer of the experimental ones. In this work we presented all the spectral lines of electric dipole known experimentally for each one of the ions that are summarized: -Silicon one time ionized, Si II, where 146 energy levels and 405 eletric dipole transitions were observed in the range 700-9500Å; -Silicon seven times ionized, Si VIII, where 73 energy levels and 96 eletric dipole transitions were observed in the range 50-1900Å and -Silicon eight times ionized, Si IX, where 56 energy levels and 103 eletric dipole transitions were observed in the range 45-450Å
Mestrado
Física da Matéria Condensada
Mestre em Física
Oike, Hideaki. "Activation and Reactions of Si-Si and Si-Ge σ-Bonds by Bis(t-alkyl isocyanide)palladium(0) Complexes." Kyoto University, 1996. http://hdl.handle.net/2433/77780.
Full textDümmler, Wolfram. "Étude par spectrométrie de masse d'ions secondaires des interfaces Ti/Si₃N₄, Ag/Si₃N₄ et Cu/Si₃N₄." Vandoeuvre-les-Nancy, INPL, 1998. http://www.theses.fr/1998INPL046N.
Full textKalendra, Vidmantas. "Study of the deep levels induced by the high energy proton and neutron irradiation in the structures of high resistivity Si, SiC and GaN." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2009. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2009~D_20091215_091727-69995.
Full textDisertacijoje išanalizuoti gilieji centrai didžiavaržiuose Si, SiC ir GaN dariniuose, sietini su didelės energijos protonų bei neutronų spinduliuote sudarytais defektais, atskleistos radiacinių defektų transformacijos po iškaitinimų, didelių energijų spinduliuotės įtaka krūvio pernašai ir pagavai medžiagose, tinkamose jonizuojančiosios spinduliuotės detektoriams, tiriamiems pagal Europos branduolinių tyrimų centro (CERN) projektus. 4H-SiC dariniuose, apšvitintuose 24 GeV/c protonais, išanalizuota elektrinių charakteristikų kaita. Iš šiluma skatinamųjų srovių spektrų nustatytos šiluminės aktyvacijos energijų vertės. Taip pat 4H-SiC dariniuose, apšvitintuose protonų įtėkiais, siekiančiais 1016 cm-2, įvertintas skirtingų spinduliuote sukurtų izotopų kiekis. Neapšvitintose GaN dariniuose nustatyta, kad medžiagos elektrinio laidumo parametrų kaitą nulemia krūvininkų judrio kitimas. Apšvitintuose neutronais GaN dariniuose šiluma skatinamųjų srovių spektroskopijos būdu buvo nustatyti dominuojančių defektų lygmenys. Aptikta, kad po apšvitos 24 GeV/c protonų įtėkiais, siekiančiais 1016 cm-2, GaN susidarė 7Be, 22Na ir kiti ilgaamžiai radionuklidai, kurių atominis skaičius A<70, bei žymiai pakito spinduliuotės detektorių krūvio pernašos savybės. Didžiavaržio silicio detektoriuose po apšvitos reaktoriaus neutronais susidarė visa eilė radiacinių defektų, kuriems priskirtinų giliųjų centrų parametrai buvo įvertinti fotojonizacijos spektroskopijos ir tamsinės srovės temperatūrinių kitimų... [toliau žr. visą tekstą]
Kalendra, Vidmantas. "Didelės energijos protonais ir neutronais sukurtų giliųjų centrų tyrimas didžiavaržio Si, SiC ir GaN dariniuose." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2009. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2009~D_20091215_091739-99248.
Full textInvestigations made on new materials and their structures for production of particle detectors based on semi-insulating SiC and GaN comprise the technological and applied importance of this study. Innovations in defect control technology, especially, in recognition of extended defects and percolative carrier transport in heavily irradiated detector structures are considered and applied for scientific implementations. These investigations have been performed within a framework of CERN rd50 project. Irradiation by 24 GeV protons varying fluence up to 1016 cm-2 deteriorates rectifying properties of the 4H-SiC particle detectors. Different isotopes produced in 4H-SiC during irradiation by protons have been revealed by gamma spectroscopy. In the non-irradiated GaN material the temperature-dependent variations of leakage current have been unveiled to be caused by the carrier mobility temperature changes. Activation energy values have been extracted for proton radiation induced deep centres in the GaN detectors by thermally stimulated current spectroscopy as well as the isotopes and long-living radio-nuclides have been identified by gamma spectroscopy. In the Si detectors, irradiated by reactor neutrons, the photo-activation energy values have been determined for the deep levels located below the mid-gap by photo-ionisation spectroscopy while isochronal anneals enhance the density of the acceptor-type vacancy-related defects.
Low, Robert C. D. "Magneto-tunneling of holes in Si/Si1-xGex/Si double barrier structures." Thesis, University of Ottawa (Canada), 1991. http://hdl.handle.net/10393/7712.
Full textMülazımoğlu, Mehmet Hașim. "Electrical conductivity studies of cast Al-Si and Al-Si-Mg alloys." Thesis, McGill University, 1988. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=75785.
Full textSteinhoff, Robert M. (Robert Michael). "Resonant tunneling and its prospects in Si/ZnS and Si/CaF₂ heterostructures." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/43413.
Full textIncludes bibliographical references (p. 50-51).
by Robert M. Steinhoff.
M.Eng.
Dumont, Lucile. "Rare earth doped si based frequency conversion layer for si solar cell." Caen, 2016. http://www.theses.fr/2016CAEN2035.
Full textThis thesis work focuses on the development of silicon based down-conversion layers allowing the improvement of the silicon solar cells efficiency. SiNx terbium and ytterbium co-doped layers are produced by radio-frequency reactive magnetron co-sputtering. The optical properties of the undoped SiNx host matrix are investigated and optimized prior doping to obtain a layer suitable for the down-conversion process and keeping anti-reflective properties. The systems with the terbium-doped matrix and terbium-ytterbium co-doped matrix are optimized with the aim of achieving an intense photoluminescence emission from Tb3+ ions and Yb3+ ions respectively through a wide UV domain excitation. The energy transfer mechanisms between the matrix and the terbium ions and then between those last ions and the ytterbium ones are detailed. The cooperative energy transfer taking place between Tb3+-Yb3+ ions involved in the down-conversion process is highly dependent on the distance between the two ions. Thus, in order to achieve a higher quantum efficiency, a multilayer approach based on alternating stack of Tb- and Yb-doped sublayers has been developed to increase the number of excited Yb3+ ions. The effect of this approach on the frequency conversion process is discussed in details. Lastly, the optimized layers are deposited on industrial silicon solar cells in order to determine the influence of those layers on the solar cells efficiency
Vlasukova, L. A., V. N. Komarov, V. A. Skuratov, and V. N. Yuvchenko. ""Etchability" of ion tracks in Si02/Si and Si3N4/Si thin layers." Thesis, Sumy State University, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20872.
Full textXu, Bin. "Si/SiGe thermoelectric generator." Thesis, Imperial College London, 2015. http://hdl.handle.net/10044/1/25750.
Full textHan, Si-ping. "DNA Directed Self-Assembly of Carbon Nanotube Structures." Thesis, 2011. https://thesis.library.caltech.edu/6214/1/Si-ping_Han_PhD_Thesis_version_4_Dec_16_2010.pdf.
Full textProduction of pure carbon nanotube species and organization of nanoscale structure are two fundamental barriers to the utilization of CNTs in nanoelectronics. We have developed new methods to characterize double walled carbon nanotube (DWNT) structure by Raman spectroscopy and organize single walled carbon nanotube (SWNT) constructs using DNA.
First, using atomistic force fields calculations, we have shown that the radial breathing modes (RBM) of double walled carbon nanotubes can be accurately modeled as two uniform concentric cylindrical elastic shells coupled by a van der Waals interaction. This model leads to a simple equation which can be solved to give accurate RBMs (given diameters) or diameters (given RBMs).
Secondly, we have developed a method for using DNA origami to template the assembly of complex SWNT structures. In this process, SWNTs are modified with non-covalently attached DNA linkers that present duplex labeling domains for base pairing to complementary single stranded hooks on customized DNA origami. We show that the SWNTs attach at positions and in orientations specified by their labeling sequence, and that nanotube cross-junctions assembled from two different SWNTs in this manner can behave as field effect transistors.
Finally, we have devised a method for using DNA linkers to organize arrays of parallel SWNTs with uniform and selectable inter-nanotube separation of <20 nm. SWNTs are first dispersed in aqueous solution with DNA linkers-spacers that non-covalently anchor onto their sidewalls. When the modified SWNTs are then deposited on mica or polar lipid bilayers and allowed to diffuse on the surface, they form parallel arrays of SWNTs in which different domains of the DNA linker-spacers act to maintain array cohesion and enforce uniform separation. Thus, the use of 7 bp, 20 bp, and 60 bp DNA spacer domains result in ~3 nm, ~8.5 nm, and ~22 nm inter-nanotube separations. We further use the spacer domains as rigid scaffolds for the positioning of Streptavidin proteins between adjacent nanotubes, and give a simple method for transfer of intact arrays onto adhesive glass substrates. Further development of this technology could lead to wafer scale organization of dense parallel SWNT decorated with heterogeneous nanoscale objects.
Xia, Xiaoxing. "Adaptive and Reconfigurable Architected Materials Driven by Electrochemistry." Thesis, 2019. https://thesis.library.caltech.edu/11595/9/SI%20Video%201.mp4.
Full textArchitected materials are a new class of engineered materials with carefully controlled internal structures that give rise to properties that differ from or surpass those of their constituent materials. Recent advances in additive manufacturing provide an extraordinary opportunity to rationally design the structure and the chemical composition of architected materials across multiple length scales to optimize properties and functionalities for a variety of applications. These functional architected materials are capable of decoupling critical trade-offs, such as strength vs. density, to reach new regions of the material property space, and enabling exotic properties that rarely exist in classical materials such as negative refraction and negative thermal expansion.
This thesis probes into the dynamic behaviors of architected materials undergoing electrochemical reactions and aims to provide an in-depth understanding of the underlying mechanisms as well as design principles generalizable for other functional architected material systems. We developed novel fabrication methods based on two-photon lithography and various physical and chemical post-processing techniques to create architected materials with multi-level design freedom including feature sizes, structural geometries, and material compositions, which resonates with the multi-faceted challenges in electrochemical systems. We demonstrated that architected materials provide a new platform to design battery electrodes that could accommodate the large volumetric changes associated with conversion-based electrode materials, while decoupling the longstanding trade-off between active material loading and transport kinetics in batteries. Furthermore, we presented a new class of electrochemically reconfigurable architected materials that could transform their structures in a programmable, reversible and non-volatile fashion, which provide new vistas for designing mechanical metamaterials with tunable phononic bandgaps and deployable micro-devices for biomedical applications.
The multi-scale and multi-physics nature of these electrochemically driven architected materials prompted us to develop a toolset of (1) in situ SEM and optical microscopy to visualize the dynamic responses, (2) coupled chemo-mechanical finite element analysis to reconstruct detailed mechanical evolution as electrochemical reactions proceed, and (3) a statistical mechanics framework to capture the transient interactions between coupled mechanical instabilities. Using these tools, we investigated lithiation-induced cooperative beam buckling in tetragonal Si microlattices: from the deformation mechanisms of individual beams and the cooperative coupling between buckling directions of neighboring beams to the lithiation rate-dependent distribution of ordered buckling domains separated by distorted domain boundaries. Results indicate that local defects and stochastic energy fluctuations play a critical role in the dynamic response of architected materials in a way analogous to that during phase transformations of classical materials. These connections have profound implications on how we could understand and design architected materials by drawing inspiration from established theories in materials science.
Redknap, David Owen. "Si et même si concessifs." Thesis, 1994. http://hdl.handle.net/2429/5224.
Full textGuihard, Matthieu. "Étude de phase des systèmes Ni/Si-endommagé et Ni/a-Si, par XRD résolue en temps et nanocalorimétrie." Thèse, 2008. http://hdl.handle.net/1866/8045.
Full textChen, Yu-Chang, and 陳昱敞. "The study of magnetic properties in Si/Al,Si/Cu and Si/Ge films." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/15698858591553909427.
Full text國立臺灣海洋大學
材料工程研究所
99
This research is to investigate the composition, surface morphology, chemical bonding and magnetism properties of Si/Al, Si/Cu, Si/Ge thin films prepared by sputtering technique. We introduce different amount of Si while the thickness of the matrix remains constant. At a specific concentration, the highest saturation magnetization was measured. Under the SEM, the surface morphology of the matrix is a thin film with identifiable small particles. It is believed that once the Si or Ge reaches a certain concentration, it will form a network in between these small particles of the matrix. During the experiment, oxygen was accidently introduce into the sputtering process and enhance the magnetic properties. Series of samples deposit under different oxygen ratio were then prepared. It was discovered that the addition of oxygen may result the oxidation not completely of Si and form SiOx, which may be the primary reason for the magnetism measured.
Tsao, Kai-Yang, and 曹凱揚. "High Strength Si(111) Substrate with Poly-Si/α-Si Sealing Nanotexture for GaN." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/x7thcw.
Full text