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Dissertations / Theses on the topic 'Si quantum well'

Author: Grafiati

Published: 4 June 2021

Last updated: 19 February 2022

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1

Tasmin, Tania. "Design of SiGe/Si quantum-well optical modulators." Thesis, University of British Columbia, 2010. http://hdl.handle.net/2429/27904.

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An electro-optic modulator containing a single SiGe/Si quantum-well has been designed for operation at λ₀= 1.55 µm. This single quantum-well modulator has a lower VπLπ than the 3 quantum-well modulator recently designed and optimized by Maine et al. for operation at λ₀= 1.31 µm, for which the VπLπ product was 1.8 V•cm [25]. Both modulators are derived from the detailed design given for their modulator in [40]. This single quantum-well modulator contains a Si₀.₈Ge₀.₂ quantum-well with Non-Intentionally Doped (NID) and P⁺ highly doped layers on either side. With no field applied, holes from the

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2

Becker, Christian Eberhard. "Transport properties of modulation doped Si/SiGe quantum well structures." Thesis, University College London (University of London), 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.404404.

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3

Cho, Eun Chel Electrical Engineering UNSW. "Optical transitions in SiO2/crystalline Si/SiO2 quantum wells and nanocrystalline silicon (nc-Si)/SiO2 superlattice fabrication (Restricted for 24 months until Feb. 2006)." Awarded by:University of New South Wales. Electrical Engineering, 2003. http://handle.unsw.edu.au/1959.4/22492.

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Innovation in photovoltaic technology may offer cost competitive options to other energy sources and become a viable solution for the energy and environmental challenges of the 21st century. One proposed innovative technology is based on all-silicon tandem cells, which are constructed using superlattices consisting of environmental friendly Si and its compounds. The well and barrier materials in superlattices are restricted to silicon and silicon oxide during the present study. Single crystalline Si/SiO2 quantum wells (QWs) have been fabricated by thermal oxidation of silicon-on-insulator (SO

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4

Corbin, Elizabeth Ann. "Infra-red optical properties of SiGe/Si heterostructures." Thesis, University of Newcastle Upon Tyne, 1995. http://hdl.handle.net/10443/810.

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We present full-scale relativistic pseudopotential calculations of the first-order susceptibility in p-type SiGe/Si multiple quantum well structures with a view to exploring the suitability of such systems for infrared applications in the 3-5yrn and 8-15itm ranges. A derivation of an expression for the linear susceptibility, or absorption, is given and the frequency dependence of the linear response due to transitions between the valence minibands is determined. The microscopic origin of the absorption is demonstrated for both parallel and normal incident light. Comparisons between calculated

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5

Shin, Dong Hoon. "Magnetotransport phenomena in modulation doped N-channel Si/ Si[subscript 0.7]Ge[subscript 0.3] quantum well structures." Thesis, University College London (University of London), 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.393626.

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6

Liang, Hu. "Fabrication of high power InGaN/GaN multiple quantum well blue LEDs grown on patterned Si substrates /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20LIANG.

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7

Weiss, Bernard Lawson. "Modelling and characterisation III-V semiconductor quantum well structures and Si based structures for optoelectronic applications." Thesis, University of Surrey, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267875.

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8

Gadir, Mazin A. "Theoretical studies of GaAs / AlGaAs and SiGe / Si mid- and far-infrared (Terahertz) quantum well infrared photodetectors." Thesis, University of Leeds, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.417888.

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9

Aslan, Bulent. "Physics And Technology Of The Infrared Detection Systems Based On Heterojunctions." Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/12604801/index.pdf.

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The physics and technology of the heterojunction infrared photodetectors having different material systems have been studied extensively. Devices used in this study have been characterized by using mainly optical methods, and electrical measurements have been used as an auxiliary method. The theory of internal photoemission in semiconductor heterojunctions has been investigated and the existing model has been extended by incorporating the effects of the difference in the effective masses in the active region and the substrate, nonspherical-nonparabolic bands, and the energy loss per collisions

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10

Ariyawansa, Gamini. "Semiconductor Quantum Structures for Ultraviolet-to-Infrared Multi-Band Radiation Detection." Digital Archive @ GSU, 2007. http://digitalarchive.gsu.edu/phy_astr_diss/17.

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In this work, multi-band (multi-color) detector structures considering different semiconductor device concepts and architectures are presented. Results on detectors operating in ultraviolet-to-infrared regions (UV-to-IR) are discussed. Multi-band detectors are based on quantum dot (QD) structures; which include quantum-dots-in-a-well (DWELL), tunneling quantum dot infrared photodetectors (T-QDIPs), and bi-layer quantum dot infrared photodetectors (Bi-QDIPs); and homo-/heterojunction interfacial workfunction internal photoemission (HIWIP/HEIWIP) structures. QD-based detectors show multi-color c

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11

Küpers, Hanno. "Growth and properties of GaAs/(In,Ga)As core-shell nanowire arrays on Si." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/19402.

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Diese Arbeit präsentiert Untersuchungen zum Wachstum von GaAs Nanodrähten (NWs) und (In,Ga)As Hüllen mittels Molekularstrahlepitaxie (MBE) mit sekundärem Fokus auf den optischen Eigenschaften solcher Kern-Hülle Strukturen. Das ortsselektive Wachstum von GaAs NWs auf mit Oxidmasken beschichteten Si Substraten wird untersucht, wobei der entscheidende Einfluss der Oberflächenpreparation auf die vertikale Ausbeute von NW Feldern aufgedeckt wird. Basierend auf diesen Ergebnissen wird ein zweistufiger Wachstumprozess präsentiert der es ermöglicht NWs mit dünner und gerade Morphologie zu erhalten ohn

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12

Valloggia, Sylvie. "SPECTROSCOPIE DE PHOTOLUMINESCENCE LOCALE DANS LES SEMICONDUCTEURS MASSIFS (Si, InP) ET LES PUITS QUANTIQUES (GaAs/GaAlAs)." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37619041b.

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13

Sidiki, Tamim Peter. "Structural and optical characterisation of Si/Si1-xGex multiple quantum wells." [S.l. : s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=962699195.

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14

Quiroga, Jean-Manuel. "Étude des propriétés optiques de multicouches a-Si:H/a-SiO2." Grenoble 1, 1998. http://www.theses.fr/1998GRE10124.

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L'etude porte sur les proprietes optiques de puits nanometriques multiples a-si:h/a-sio#2 elabores par pecvd (he+sih#4+o#2). Les caracteristiques des materiaux de reference sont determinees par diverses techniques de spectroscopie optique. Nous montrons la necessite de simuler les spectres en tenant compte des reflexions multiples afin d'eviter des erreurs importantes sur la valeur du coefficient d'absorption. Des mesures in situ de la teneur en oxygene dans le plasma nous ont permis de determiner une procedure de depot des multicouches reduisant la largeur des interfaces. La modulation de la

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15

Sagnes, Isabelle. "Propriétés électro-optiques des hétérostructures épitaxiées sur silicium." Université Joseph Fourier (Grenoble ; 1971-2015), 1994. http://www.theses.fr/1994GRE10100.

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Les progres des techniques de croissance cristalline permettent aujourd'hui de fabriquer sur un substrat de silicium une large variete d'heterostructures epitaxiees a base de siliciures metalliques ou d'alliages silicium-germanium. Les proprietes de discontinuite de bandes electroniques dans les heterojonctions sige/si et les barrieres schottky permettent d'une part d'etendre jusqu'a l'infra-rouge lointain la detection sur silicium du rayonnement electro-magnetique, d'autre part d'obtenir le confinement bidimensionnel (2d) de gaz de porteurs libres a forte morbilite, tres prometteur pour des a

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16

Li, Cheng Che, and 李政哲. "Impurity Enhanced Intermixing in SiGe/Si Quantum Well Structure." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/13235051664378262492.

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17

Wang, Tzong-Liang, and 王宗良. "Study of Si/SiGe Multiple Quantum Well(MQW) Infrared Photodetector." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/30489586710397035336.

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碩士<br>大葉大學<br>電機工程學系碩士班<br>94<br>The SiGe based separate-absorption-multiplication avalanche-photodiode（SAMAPD）and has been implemented for the first time. The structure of SAMAPD, in our work, is P +-Si/MQW-(SiGe/Si)/ i-SiGe/N+-Si, in which the i-SiGe and quantum well structure of SiGe/Si are deposited by ultra-high-vacuum chemical-vapor-deposition (UHVCVD) system. In this structure，the thickness of i-Si0.8Ge0.2 layer is about 150nm and quantum structure is of Si (25 nm)/Si0.8Ge0.2( 5 nm) with five periods. Experiment results shows that the current increases sharply at about 2 V reverse bias,

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18

Chiu, Chien-Wei, and 邱建維. "Enhancement of Silicon Light Emission with Si/SiGe Quantum Well Structure." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/32938837991899689774.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>94<br>The advantage of the optoelectronic component of Silicon Germanium is fully compatible with the Si-based microelectronic chips. In addition, the progress of the growth techniques for quantum hetero-junction structure is in advanced. So the hetero-junction structure of Silicon Germanium is studied far and wide in recent years. In this thesis, a method with band bending effect to enhance silicon light emission was proved successfully by real fabricated devices and theoretical simulation results. Within simulation, we could know detail physical phenomenon which c

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19

Hsieh, Wen-Yao, and 謝文耀. "Structure and Optical Properties of Ge-based Multiple-quantum-well on Si." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/83pa5t.

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碩士<br>國立中正大學<br>機械工程學系暨研究所<br>103<br>Compared to electronic communications, optical communications has many advantages. So the development of optical communication components will play an important role in the field of communications at the future. In order to produce the light emitting element which can be integrated in today's integrated circuits. This paper discusses the structure and optical properties of Ge-based multiple-quantum-well on Si. We use Raman spectroscopy to know raman shift of Ge and SiGe layer in Ge / SiGe MQW. Then we determined the tensile strain of Ge layer is 0.21%, the

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20

Lin, Wei-Chung, and 林威沖. "Electrooptical Properties of the Si delta-doped GaAs/GaInP quantum well system." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/54286892199997342370.

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碩士<br>國立臺灣師範大學<br>物理學系<br>84<br>We use the method of photo-refraction to measure modulation spectra of delta-doped GaAs/GaInP quantum well system.All the spectra clearly showed the Franz-Keldyshoscillation at different temperature. By varying temperature from 75K to 150K,we found the exciton transition near energy-gap.The effect of delta-doped are not only built-in electric field, also making wellpotential deeper and sharper.By analyzing Franz-Keldysh oscillation for allspectra, we can dedu

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21

Jhang, Jhih-Hao, and 張致豪. "Electronic transport properties of a Si quantum well studied in tilted magnetic field." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/48383837315935407509.

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22

Liu, Yen-Hung, and 劉彥宏. "Study on InGaN/GaN Quantum Well Structures on Si Substrate with Transmission Electron Microscopy." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/25988065222972125041.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>100<br>The difference of thermal expansion coefficient between GaN and Si results in a strong tensile stress on the GaN epitaxial layer during the cooling process. In our study, we create a compressive thermal stress by using an AlN buffer layer grown with graded temperatures to compensate the tensile thermal stress. The InGaN/Gan quantum well (QW) sample with the largest number of graded-temperature growth stages has the weakest residual tensile stress, shortest emission wavelength, and highest emission internal quantum efficiency. In this study, the variation tre

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23

Chen, Hung-Ming, and 陳宏銘. "Electroluminescence characteristics of LED with Si/SiGe multiple quantum well under different doping conditions." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/66129598288356015929.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>94<br>In this thesis we demonstrated 1.3~1.4μm wavelength light emission from 10-period Si/Si0.85Ge0.15 quantum-well (QW) structures. There are two different samples in our investigation: p-i-n and p-p-n structures, grown by UHVCVD system. For the p-i-n sample, the QW structure is in the depletion region of diode, while for the p-p-n sample it is in the electron diffusion region of diode. According to our experiment results, the luminescence of QW dominates and the luminescence of Si is only observed at high bias for p-i-n sample at low temperature. However, the lu

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24

Tsai, Wen-Chung, and 蔡文忠. "Physics and Device Applications of Si/Si1-xGex Quantum Well Structures Grown by Ultrahigh Vacuum Chemical Vapor Deposition." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/17263886108099700011.

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碩士<br>國立交通大學<br>電子工程學系<br>85<br>In this thesis, the growth of Si and strained Si1-xGex alloy epitaxial layer have been investigated by ultrahigh vacuum chemical vapor deposition (UHV/CVD) in the temperature range of 600 - 475℃. The physical properties and devices applications, including p-type MODFETs and p-type QWIPs detectors of the Si/ Si1-xGex quantum well heterostructures have been demonstrated. In the epitaxial layers growth, the deposition of excellent quality Si epitaxy and strained

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25

Tu, Li-Ping, and 杜麗萍. "High-Sensitivity Planar Si-Based MSM Photodetector with Very Thin Amorphous Silicon-Alloy Quantum-Well-Like Barrier Layers." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/96627656920503519878.

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碩士<br>國立中央大學<br>電機工程研究所<br>91<br>Abstract The planar Si-based metal-semiconductor-metal photodetectors (MSM-PDs) with a-Si:H/a-SiC:H (or a-Si:H/a-SiGe:H) multi-layers to reduce device dark current had been studied. For the ones with a-Si:H/a-SiC:H multi-layers, their sensitivity could be enhanced very effectively. Under a very weak incident light power (0.5 μW) and with a 4 V bias-voltage, the device photo- to dark- current ratio (Ip/Id) could be 103 times higher than that of the previously reported one. Also, the average full-width-at-half-maximum (FWHM) and fall-time of the device temp

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26

Lee, Chien-Hung, and 李健鴻. "Growth of well-aligned Ge quantum dots by adjusting the inner morphology of nano-hole array on Si substrate." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/29359201902735440185.

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碩士<br>臺灣大學<br>電子工程學研究所<br>98<br>This thesis discusses systematically about how to achieve the well-aligned and size-homogeneous germanium quantum dots (Ge QDs). The Si (001) substrates were fabricated by electron beam (E-beam) lithography and reactive ion etching (RIE), which result in circle-shape periodic nano-patterned on the surface. Then, Ge QDs were grown on the circle-patterned Si (001) template in ultrahigh vacuum chemical vapor deposition (UHV-CVD) chamber using Stranski-Krastanow (SK) growth mode. We successfully realize one Ge QD in one hole by modulating the inner morphology of hol

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27

Choi, Miri. "Monolithic integration of functional perovskite structures on Si." Thesis, 2014. http://hdl.handle.net/2152/26052.

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Functional crystalline oxides with perovskite structure have a wide range of electrical properties such as ferroelectric, ferromagnetic, and superconductive, as well as unique properties that make them suited for a wide variety of applications including electro-optics, high-k dielectrics, and catalysis. Therefore, in order to realize the potential of perovskite oxides it is desirable to integrate them with semiconductors. Due to the high surface energy of oxides compared to that of semiconductors and the low number of oxides that are thermodynamically stable against SiO₂ formation, it has been

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28

Cho, Eun Chel. "Optical transitions in SiO2/crystalline Si/SiO2 quantum wells and nanocrystalline silicon (nc-Si)/SiO2 superlattice fabrication /." 2003. http://www.library.unsw.edu.au/~thesis/adt-NUN/public/adt-NUN20040105.171835/index.html.

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29

Zhu, Li Huan, and 朱立寰. "Persistent photoconductivity in Si1-xGex/Si quantum wells." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/60484668283517265317.

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30

Wang, Ke-Yao, and 王科堯. "Magneto-Photoluminescence study of strained Si/SiGe multi-quantum wells." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/89673670055537466458.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>95<br>Strained Si/SiGe heterostructure has attracted great attention recently for its application in high speed and optoelectronic devises. However, the basic parameters such as band alignment are still not so clear due to the complexity of the band shifting and splitting as a result of strain effect between Si/SiGe lattice mismatch. For optoelectronic applications, band alignment (type-I and type-II) with different oscillation strength can cause extreme different optical transition efficiency. In this thesis, magneto-luminescence measurement was performed for Si/Si

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31

Wang, Ke-Yao. "Magneto-Photoluminescence study of strained Si/SiGe multi-quantum wells." 2007. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2507200711153300.

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32

TSAI, LING-CHUN, and 蔡玲君. "Study of Persistent Photoconductivity in SiGe/Si and AlGaSb/InAs quantum wells." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/77048456121442343108.

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碩士<br>國立臺灣大學<br>物理學系研究所<br>86<br>In this thesis,we present a detailed study of persistent photoconductivityef fects in SiGe/Si quantum wells as well as AlGaSb/InAs quantum wells.I. SiGe/Si quantum wells Persistent Photoconductivity (PPC) has been observed in boron- doped SiGe/Siquantum wells. The decay kinetics of the PPC effect can be well d escribed by a stretched-exponential function,I(t)=I(0)exp[-(t/τ)^β](0<β<1), which is usually observed in many disorder materials. Through the studies of t he PPCef

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Zheng, Yu-Shiang, and 鄭羽翔. "Strain analysis on semipolar nanopyramidal InGaN quantum wells grown on (100) Si substrates." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/8mmy98.

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碩士<br>國立中央大學<br>光電科學與工程學系<br>107<br>In this study, the effect of lattice strain before and after substrate transfer on the optoelectrionic properties of nanostructured InGaN quantum wells (QWs) structures was investigated. The nanostructure QWs were grown on (100) Si substrates by metal-organic chemical vapor deposition (MOCVD), employing ZnO nanorods as the buffer layer to release the huge stratin between Si and the nitride epilayer. Using the small lattice mismatch between ZnO and GaN, we successfully grew the (10-11) semi-polar nanopyramidal QWs on the (100) Si substrate. The diffusion of

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34

Sidiki, Tamim Peter [Verfasser]. "Structural and optical characterisation of Si/Si1-xGex multiple quantum wells / submitted by Tamim P. Sidiki." 2001. http://d-nb.info/962699195/34.

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Su, Wei-shiang, and 蘇暐翔. "Studies of GaN thin films and InGaN/GaN quantum wells on Si substrates with AlN buffer layers." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/80232853635099693506.

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碩士<br>國立臺南大學<br>材料科學系碩士班<br>100<br>We use micro-Raman spectra, scanning electron microscope, atomic force microscope, and photoluminescence spectra to study the properties of III-V nitride semiconductor materials grown on (111) Si substrates with different growth conditions of AlN buffer layers. The studies are divided into two parts. The first part is the growth of multiple AlN buffer layers with the decrease of growth temperature from 1000 to 700 oC. For the increase of the numbers of AlN buffer layer, it shows the blue shift of near band edge light emission energy and intensity, high energ

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Huang, Wei-Lun, and 黃偉綸. "Structural and Optical Properties of ZnO/MgxZn1-xO Multiple Quantum Wells Using a Y2O3 Buffer Layer on Si (111)." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/68410280135324073908.

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碩士<br>國立交通大學<br>工學院加速器光源科技與應用碩士學位學程<br>104<br>This thesis reports the growth and physical properties of ten-period ZnO/MgxZn1-xO multiple quantum wells (MQWs) prepared on the most widely used semiconductor material, Si. The introduction of a nm-thick Y2O3 transition layer between Si (111) substrate and a ZnO buffer layer significantly improves the structural perfection of the MQWs grown on top of it. Single phase MgxZn1-xO with Mg contents x approximately higher than 0.33, as determined from its lattice constants and cathodoluminescence emitted peak position, was adopted as the barrier materia

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37

LAI, HO-CHINE, and 賴和謙. "(I) Investigation of surface plasmon resonance behaviors of GaxZn1-xO thin films and (II) influence of AlN buffer layers on GaN films and InGaN/GaN quantum wells grown on Si substrates." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/d9wng5.

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碩士<br>國立臺南大學<br>材料科學系碩士班<br>107<br>There are two parts of investigations in this thesis. The first part is the study of plasmonic resonance of characteristics of GaxZn1-xO thin films grown on sapphire substrate with molecular beam epitaxy (MBE). Three series of samples are prepared for the variations of Ga and Zn effusion cell temperature and substrate temperature. The results exhibit that electron concentration of GaxZn1-xO thin films can reach 1020~1021 cm-3. Preferential orientation along (002) of X-ray diffraction (XRD) pattern is demonstrated in GaxZn1-xO thin films. For the GaxZn1-xO thi

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Wang, Bo-Yan, and 王博彥. "Studies of (I) the influence of Mn composition on CdMnTe epilayers grown on Si substrate and (II) the effect of silicon doping in part of barriers on 8 periods InGaN/GaN quantum wells." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/j493pm.

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碩士<br>國立臺南大學<br>材料科學系碩士班<br>103<br>There are two parts in this research. The first part is the study of effects of Mn content in Cd1-xMnxTe grown by molecular beam epitaxy (MBE) on silicon (Si) (111) substrate. Owing to different binding energy of atoms, Te-Te binding shows the lower forming energy than Cd-Te, results in the production of Te-Te binding defects. Incorporation of Mn atoms into CdTe demonstrates that the lower binding energy of Mn-Te than Te-Te can cause the reduction of Te-Te binding defects in CdTe:Mn. In this report, the ternary alloy of Cd1-xMnxTe with Mn content in 0, 2, 21

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